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WO2020071020A1 - Module haute fréquence et dispositif de communication - Google Patents

Module haute fréquence et dispositif de communication

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Publication number
WO2020071020A1
WO2020071020A1 PCT/JP2019/034054 JP2019034054W WO2020071020A1 WO 2020071020 A1 WO2020071020 A1 WO 2020071020A1 JP 2019034054 W JP2019034054 W JP 2019034054W WO 2020071020 A1 WO2020071020 A1 WO 2020071020A1
Authority
WO
WIPO (PCT)
Prior art keywords
main surface
frequency module
semiconductor
module substrate
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/034054
Other languages
English (en)
Japanese (ja)
Inventor
優佑 浪花
武藤　英樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of WO2020071020A1 publication Critical patent/WO2020071020A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings

Definitions

  • the present invention relates to a high-frequency module and a communication device.
  • Patent Document 1 discloses a configuration of a circuit component built-in module (high-frequency module) in which surface mounting components are mounted on a first main surface of a multilayer circuit board and semiconductor elements are mounted on a second main surface.
  • this circuit component built-in module when the multilayer circuit board is viewed in plan, a plurality of vias and lands are arranged so as to surround the semiconductor element. Accordingly, the module with built-in circuit components is said to be useful as a high-frequency module excellent in high-frequency operation, noise resistance, heat dissipation, and miniaturization.
  • the plurality of vias and lands are arranged so as to surround the semiconductor element (semiconductor IC), so that high-frequency operation and noise resistance are achieved.
  • electrical performance such as the electrical performance and mechanical performance such as the mounting strength can be secured to some extent, there is a problem that the degree of freedom in designing the arrangement of semiconductor elements (semiconductor ICs) and the degree of design due to the size of the high-frequency module are not secured. is there.
  • the present invention has been made to solve the above problems, and has as its object to provide a high-frequency module and a communication device with improved design flexibility without deteriorating electrical and mechanical performance. I do.
  • a high-frequency module has a module substrate having a first main surface and a second main surface, and a third main surface and a fourth main surface.
  • a semiconductor IC for processing a high-frequency signal mounted on the first main surface so as to be in the order of the third main surface and the fourth main surface, and at least the fourth main surface from the first main surface
  • a plurality of first connection electrodes extending in a direction perpendicular to the first main surface up to a first virtual plane including: a plurality of first connection electrodes, the outer edges of the semiconductor ICs being parallel to each other when the module substrate is viewed in plan The first side and the second side, and a plurality of sides that are orthogonal to the first side and the second side and that are parallel to each other and that constitute a plurality of sides forming the outer edge of the module substrate.
  • the first region on the module substrate and the second region on the module substrate between the side opposite to the second side of the plurality of sides and the second side each include the plurality of regions.
  • Some of the first connection electrodes are arranged, and a third region on the module substrate between the third side of the plurality of sides and the third side is provided with the plurality of first connection electrodes. The first connection electrode is not provided.
  • FIG. 1 is a circuit block diagram illustrating an example of a circuit configuration of the communication device according to the first embodiment.
  • FIG. 2 is a schematic plan view illustrating an example of an arrangement of circuit elements built in the semiconductor IC according to the first embodiment.
  • FIG. 3A is a schematic plan view of the high-frequency module according to Embodiment 1.
  • FIG. 3B is a schematic cross-sectional configuration diagram of the high-frequency module according to Embodiment 1.
  • FIG. 4 is a schematic plan view of a high-frequency module according to a modification of the first embodiment.
  • FIG. 5A is a schematic cross-sectional configuration diagram of the high-frequency module according to Embodiment 2.
  • FIG. 5B is a schematic cross-sectional configuration diagram of the high-frequency module according to Comparative Example 1.
  • FIG. 5A is a schematic cross-sectional configuration diagram of the high-frequency module according to Embodiment 2.
  • FIG. 5B is a schematic cross-sectional configuration diagram of the high-frequency module according to Compar
  • FIG. 5C is a schematic cross-sectional view of the high-frequency module according to Comparative Example 2.
  • FIG. 5D is a schematic cross-sectional view of the high-frequency module according to Comparative Example 3.
  • FIG. 6 is a schematic diagram illustrating a planar configuration and a cross-sectional configuration of a high-frequency module according to Embodiment 3.
  • FIG. 7 is a schematic diagram illustrating a planar configuration and a cross-sectional configuration of a high-frequency module according to a modification of the third embodiment.
  • FIG. 1 is a circuit block diagram illustrating an example of a circuit configuration of the communication device 5 according to the first embodiment.
  • the communication device 5 includes a high-frequency module 1, an antenna element 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.
  • the high-frequency module 1 is arranged, for example, at the front end of a multi-mode / multi-band compatible mobile phone.
  • the RFIC 3 is an RF signal processing circuit that processes a high-frequency signal transmitted and received by the antenna element 2. Specifically, the RFIC 3 performs signal processing on the high-frequency signal input via the output terminal 102 of the high-frequency module 1 by down-conversion or the like, and outputs a reception signal generated by the signal processing to the BBIC 4.
  • the BBIC 4 is a circuit that performs signal processing using an intermediate frequency band that is lower in frequency than the high frequency signal transmitted through the high frequency module 1.
  • the signal processed by the BBIC 4 is used, for example, as an image signal for displaying an image or as an audio signal for a telephone call via a speaker.
  • the antenna element 2 is connected to the common terminal 101 of the high-frequency module 1, receives an external high-frequency signal, and outputs the signal to the high-frequency module 1.
  • the antenna element 2 and the BBIC 4 are not essential components.
  • the high frequency module 1 includes a digital control circuit 11, switches 12, 13 and 14, an inductor 31, a low noise amplifier 41, and filters 21 and 22.
  • the switches 12, 13, and 14 each have a function of switching the propagation path of the high-frequency signal input to the high-frequency module 1.
  • the switch 12 has, for example, a common terminal and a plurality of selection terminals, and connects the antenna element 2 to the filter 21, the connection between the antenna element 2 and the filter 22, and the connection between the antenna element 2 and other elements. Switch the connection with the filter.
  • the switch 13 has, for example, a common terminal and two selection terminals, and switches connection between the filter 21 and the inductor 31 and connection between the filter 22 and the inductor 31.
  • the switch 14 has, for example, a common terminal and two selection terminals, and switches the connection between the low noise amplifier 41 and the RFIC 3 and the connection between the other low noise amplifiers and the RFIC 3.
  • the filter 21 is, for example, a band-pass filter having a first frequency band as a pass band
  • the filter 22 is, for example, a band-pass filter having a second frequency band as a pass band.
  • the filters 21 and 22 may be, for example, any of a surface acoustic wave filter, an elastic wave filter using BAW (Bulk Acoustic Wave), an LC resonance filter, and a dielectric filter. Is not limited.
  • the inductor 31 is a matching element for matching the output impedance of the filters 21 and 22 with the input impedance of the low noise amplifier 41.
  • the inductor 31 as the matching element may be connected between a node on the path and the ground.
  • it may be composed of one or more inductors and one or more capacitors.
  • the inductor 31 is typically a chip inductor mounted on the module substrate 90, but may be configured by a plurality of planar coils formed in the module substrate 90, for example.
  • the low-noise amplifier 41 is a low-noise amplifier that amplifies a high-frequency signal in the first frequency band or the second frequency band that has passed through the filter 21 or 22.
  • the digital control circuit 11 is built in the semiconductor IC 10.
  • FIG. 2 is a schematic plan view illustrating an example of an arrangement of circuit elements built in the semiconductor IC 10 according to the first embodiment.
  • the semiconductor IC 10 shown in FIG. 1 includes a digital control circuit 11, switches 12, 13, and 14, and a low-noise amplifier 41.
  • the low noise amplifier 41 is formed on the same IC substrate.
  • the semiconductor IC 10 is composed of, for example, CMOS (Complementary Metal Oxide Semiconductor). This makes it possible to manufacture the semiconductor IC 10 at low cost.
  • the semiconductor IC 10 may be made of GaAs. This makes it possible to output a high-frequency signal having high-quality amplification performance and noise performance.
  • Each circuit element incorporated in the semiconductor IC 10 and the digital control circuit 11 are connected by digital control wiring.
  • the switch 12 and the digital control circuit 11 are connected by a control wiring 112
  • the switch 13 and the digital control circuit 11 are connected by a control wiring 113
  • the switch 14 and the digital control circuit 11 are connected by a control wiring 114.
  • 41 and the digital control circuit 11 are connected by a control wiring 141.
  • the digital control circuit 11 supplies a digital control signal 112 s for switching between conduction and non-conduction of the switch 12 to the switch 12 via the control wiring 112.
  • the digital control circuit 11 supplies a digital control signal 113 s for switching between conduction and non-conduction of the switch 13 to the switch 13 via the control wiring 113.
  • the digital control circuit 11 supplies a digital control signal 114 s for switching between conduction and non-conduction of the switch 14 to the switch 14 via the control wiring 114.
  • the digital control circuit 11 supplies a digital control signal 141 s for adjusting the amplification factor of the low noise amplifier 41 to the low noise amplifier 41 via the control line 141.
  • the high frequency module 1 controls the switches 12 to 14 and the low noise amplifier 41 by the digital control circuit 11 so that the high frequency signal received by the antenna element 2 is propagated through an appropriate signal path and transmitted to the RFIC 3 and the BBIC 4. I do.
  • a high-frequency module having a receiving / splitting circuit has been exemplified as the high-frequency module 1.
  • the high-frequency module according to the present invention may be a transmission / multiplexing circuit, or both of the transmitting and receiving circuits. May be a demultiplexing / multiplexing circuit capable of The number of frequency bands (signal paths) is not limited.
  • the high-frequency module 1 is applicable not only to selecting only one signal path but also to a system that can simultaneously receive high-frequency signals in a plurality of frequency bands.
  • each of the switches 12 to 14 may have a configuration capable of simultaneously connecting a common terminal and two or more selection terminals.
  • the high-frequency module according to the present invention only needs to have at least the semiconductor IC 10 among the circuit elements (circuit components) constituting the high-frequency module 1 according to the first embodiment. Furthermore, the semiconductor IC 10 only needs to have at least the digital control circuit 11, and need not have the low noise amplifier 41 and the switches 12 to 14. In this case, the low-noise amplifier 41 and the switches 12 to 14 may be arranged as individual components in the high-frequency module 1 other than the semiconductor IC 10.
  • FIG. 3A is a schematic plan view of the high-frequency module 1 according to Embodiment 1.
  • FIG. 3B is a schematic cross-sectional view of the high-frequency module 1 according to Embodiment 1, specifically, a cross-sectional view taken along line IIIB-IIIB of FIG. 3A.
  • FIG. 3A shows an arrangement diagram of circuit elements when the main surface 90a of the main surfaces 90a and 90b of the module substrate 90 is viewed from the z-axis positive direction side.
  • FIG. 3B shows an arrangement diagram of the circuit elements when the main surface 90b is viewed from the y-axis negative direction side.
  • the high-frequency module 1 includes a module substrate 90, a semiconductor IC 10, a plurality of columnar electrodes 150, filters 21 and 22, an inductor 31, and a circuit element 51. And 52, and resin members 80A and 80B.
  • Module substrate 90 has a main surface 90a (second main surface) and a main surface 90b (first main surface), and is a substrate on which semiconductor IC 10, filters 21 and 22, inductor 31, and circuit elements 51 and 52 are mounted. is there.
  • a low-temperature co-fired ceramic (LTC) substrate having a laminated structure of a plurality of dielectric layers (LTCC) substrate, a printed substrate, or the like is used.
  • the filters 21 and 22, the inductor 31, and the circuit elements 51 and 52 are mounted on the main surface 90a.
  • the filters 21 and 22, the inductor 31, and the circuit elements 51 and 52 are electrically and mechanically connected to the module substrate 90 via land electrodes formed on the main surface 90a of the module substrate 90 and bumps or solder. It is connected.
  • the circuit elements 51 and 52 are not shown in the circuit configuration of the high-frequency module 1 shown in FIG. 1, but are other circuit elements forming the high-frequency module 1, such as a filter, a switch, an inductor, and a capacitor. Is equivalent to
  • the module substrate 90 is a substrate on which circuit elements can be mounted on both surfaces of the main surfaces 90a and 90b.
  • the main surface 90a has the filters 21 and 22, the inductor 31, the circuit elements 51 and 52, etc. May not be mounted.
  • the semiconductor IC 10 has a main surface 10a (third main surface) and a main surface 10b (fourth main surface), and has a rectangular outer shape when the main surfaces 10a and 10b are viewed in plan.
  • the semiconductor IC 10 is mounted on the main surface 90b such that the main surface 10a faces the main surface 90b of the module substrate 90.
  • the semiconductor IC 10 is electrically and mechanically connected to the module substrate 90 via land electrodes formed on the main surface 90b of the module substrate 90 and bumps or solder.
  • the corner may be chamfered or rounded, or may have a notch at the outer edge.
  • the electrical connection between the circuit elements mounted on the main surface 90a, the electrical connection between the devices built in the semiconductor IC 10 mounted on the main surface 90b, and the circuit elements mounted on the main surface 90a is realized by the plane wiring patterns and via conductors formed inside the main surfaces 90 a and 90 b and the module substrate 90.
  • the planar wiring pattern is a conductive film formed along a direction parallel to the main surfaces 90a and 90b of the module substrate 90, and the via conductor is a direction perpendicular to the main surfaces 90a and 90b of the module substrate 90. Is a columnar conductor that extends.
  • the resin member 80A is disposed on the main surface 90a of the module substrate 90, covers at least a part of the circuit element mounted on the main surface 90a and the main surface 90a, and has reliability such as mechanical strength and moisture resistance of the circuit element. It has the function to secure the performance.
  • the resin member 80B is disposed on the main surface 90b of the module substrate 90, covers the semiconductor IC 10 and the main surface 90b, and has a function of securing reliability such as mechanical strength and moisture resistance of the semiconductor IC 10.
  • the resin member 80B does not need to cover all of the main surface 90b and the semiconductor IC 10, but may cover a part thereof. For example, the resin member 80B may only be filled between the semiconductor IC 10 and the main surface 90b. Note that the resin members 80A and 80B are not essential components of the high-frequency module according to the present invention.
  • the columnar electrode 150 extends in the vertical direction (z-axis direction) of the main surface 90b from the main surface 90b to a virtual plane 100p (first virtual plane) including at least the main surface 10b.
  • the first connection electrode extends to In the present embodiment, the columnar electrode 150 extends from the main surface 90b to the surface of the resin member 80B in a direction perpendicular to the main surface 90b (z-axis direction), beyond the virtual plane 100p.
  • One end of the columnar electrode 150 is electrically connected to a land electrode, a planar wiring pattern, or a via conductor formed on the module substrate 90 on the main surface 90b.
  • the other end of the columnar electrode 150 is exposed on the surface of the resin member 80B, and can be electrically connected to an electrode of an external (mother) board on which the high-frequency module 1 is mounted.
  • the columnar electrode 150 may be an electrode set to the ground potential (GND) of the high-frequency module 1 or an electrode that conducts a high-frequency signal (HOT) propagating through the high-frequency module 1 (for example, the common terminal in FIG. 1). 101).
  • the columnar electrode 150 may have a cylindrical shape, or may have a prismatic shape.
  • the columnar electrode 150 may be a connection electrode such as a solder ball or a bump electrode.
  • the surface of the columnar electrode 150 may have a spherical shape.
  • the outer edge of the semiconductor IC 10 includes sides 100a (first side) and 100b (second side) parallel to each other, and sides 100c orthogonal to the sides 100a and 100b and parallel to each other. (Third side) and 100d (fourth side).
  • the outer edge of the module substrate 90 includes sides 190a and 190b parallel to each other, and sides 190c and 190d orthogonal to the sides 190a and 190b and parallel to each other.
  • two sides are parallel is not limited to an angle formed by two sides being strictly 0 deg, but is defined as an angle formed by two sides being within ⁇ 15 deg. Is done.
  • the columnar electrode 150 is disposed in each of the Ab (second region) and the region Ad on the module substrate 90 between the side 190d and the side 100d facing the side 100d.
  • the columnar electrode 150 is not arranged in the region Ac (third region) on the module substrate 90 between the side 190c and the side 100c facing the side 100c.
  • the side of the semiconductor IC 10 and the side of the module substrate 90 face each other indicates a state where there is no other side of the semiconductor IC 10 and the other side of the module substrate 90 between the two sides.
  • the semiconductor IC 10 can be arranged also in the region Ac.
  • the region Ac can be effectively used.
  • the region Ac can be reduced. It is also possible to reduce the size. That is, since the degree of freedom in the arrangement of the semiconductor ICs 10 or the area reduction of the high-frequency module 1 by reducing the size of the module substrate 90 can be realized, the degree of freedom in designing the high-frequency module 1 is improved.
  • the columnar electrodes 150 are arranged in the regions Aa and Ab opposed to each other with the semiconductor IC 10 interposed therebetween, the extraction of the electric signal processed by the semiconductor IC 10 and each circuit element and the reinforcement of the ground are sufficiently ensured. In addition, the mounting strength of the high-frequency module 1 on the external board can be secured.
  • the distance Lc between the side 100c and the side 190c of the module substrate 90 that defines the region Ac is smaller than the distance La between the side 100a and the side 190a, and the distance Lc between the side 100b and the side 190b. It may be smaller than the distance Lb.
  • the columnar electrodes 150 arranged in the regions Aa and Ab sufficiently secure the extraction of the electric signal processed by the semiconductor IC 10 and each circuit element and the strengthening of the ground, and increase the mounting strength of the high-frequency module 1 on the external substrate.
  • the area of the high-frequency module 1 can be reduced by reducing the area Ac of the module substrate 90 while securing the area.
  • the present invention also includes a high-frequency module having a configuration in which the region Ac is not provided because the columnar electrode 150 is not arranged in the region Ac. That is, the side 100c and the side 190c are in an overlapping state in the plan view. In other words, the distance Lc between the side 100c and the side 190c is 0. According to this, the area of the high-frequency module 1 in the plan view can be minimized.
  • FIG. 4 is a schematic plan view of a high-frequency module 1A according to a modification of the first embodiment.
  • the high-frequency module 1A shown in the figure differs from the high-frequency module 1 according to the first embodiment only in the arrangement of the columnar electrodes 150.
  • the description of the same configuration as the high-frequency module 1 according to Embodiment 1 will be omitted, and different configurations will be described.
  • the columnar electrodes 150 are arranged in each of the two regions.
  • the columnar electrode 150 is not arranged in each of the regions Ad (fourth region).
  • the opposing regions Ac and Ad have no columnar electrode 150.
  • the semiconductor IC 10 can be arranged also in the regions Ac and Ad, or the regions Ac and Ad can be reduced. That is, the design flexibility of the high-frequency module 1A is further improved.
  • the columnar electrodes 150 are arranged in the regions Aa and Ab opposed to each other with the semiconductor IC 10 interposed therebetween, the extraction of the electric signal processed by the semiconductor IC 10 and each circuit element and the reinforcement of the ground are sufficiently ensured.
  • the high-frequency module 1A can be mounted on an external substrate.
  • the high-frequency module 1 has a module substrate 90 having main surfaces 90a and 90b, and main surfaces 10a and 10b, and the main substrate 90, the main surface 10a, and the main surface 10b are arranged in this order.
  • a semiconductor IC 10 mounted on the surface 90b for processing a high-frequency signal, and a plurality of columnar electrodes 150 extending in a direction perpendicular to the main surface 90b from the main surface 90b to a virtual plane 100p including at least the main surface 10b.
  • the outer edge of the semiconductor IC 10 includes sides 100a and 100b parallel to each other, and sides 100c and 100d orthogonal to the sides 100a and 100b and parallel to each other.
  • the semiconductor IC 10 can be arranged also in the region Ac.
  • the region Ac can be effectively used.
  • the region Ac can be reduced. It is also possible to reduce the size. That is, since the degree of freedom in the arrangement of the semiconductor ICs 10 or the area reduction of the high-frequency module 1 by reducing the size of the module substrate 90 can be realized, the degree of freedom in designing the high-frequency module 1 is improved.
  • the high-frequency module 1 can be mounted on an external substrate.
  • the high-frequency module 1 with improved design flexibility and the communication device 5 including the high-frequency module 1 without deteriorating electrical and mechanical performance.
  • FIG. 5A is a schematic cross-sectional configuration diagram of a high-frequency module 1B according to the second embodiment. Note that the planar configuration of the high-frequency module 1B according to the present embodiment is the same as that in FIG. 3A.
  • FIG. 5A is a cross-sectional view taken along line IIIB-IIIB of FIG. 3A.
  • the high-frequency module 1B includes a module substrate 90, a semiconductor IC 10, a plurality of columnar electrodes 150, filters 21 and 22, an inductor 31, and circuit elements 51 and 52. , Resin members 80A and 80B.
  • the high-frequency module 1B shown in FIG. 4 differs from the high-frequency module 1 according to the first embodiment in that the element arrangement in the semiconductor IC 10 is shown, and the connection between the semiconductor IC 10 and the inductor 31. Is different.
  • description of the same configuration as that of the high-frequency module 1 according to the first embodiment will be omitted, and different configurations will be mainly described.
  • the inductor 31 is a first component disposed on the main surface 90a.
  • the inductor 31 and the semiconductor IC 10 are connected via a via conductor 91 formed in the module substrate 90 and along a direction (z-axis direction) perpendicular to the main surfaces 90a and 90b.
  • connection wiring between the inductor 31 and the semiconductor IC 10 can be reduced, and the connection is made by a wiring (via conductor 91) having a low resistance and a small parasitic capacitance, thereby realizing low loss and high performance of the high-frequency module 1B. it can.
  • the first component connected to the semiconductor IC 10 via the via conductor 91 is not limited to the inductor 31, but includes the filters 21 and 22 and the circuit elements 51 and 52 mounted on the main surface 90a. Either one may be used.
  • the via conductor 91 may be arranged closest to the side 100c among the sides 100a to 100d in the plan view.
  • the via conductor 91 is arranged in a region that is not close to the columnar electrode 150, and is arranged in an end region of the semiconductor IC 10 and has a low probability of being close to the wiring in the module substrate 90. Therefore, the parasitic capacitance formed by the via conductor 91 and the columnar electrode 150 or the wiring can be reduced. Further, since the inductor 31 connected to the semiconductor IC 10 by the via conductor 91 is arranged on the side 100c side, the inductor 31 can be arranged so as to overlap the semiconductor IC 10 in the plan view. The wiring can be shortened and the area can be reduced.
  • the semiconductor IC 10 has a built-in low-noise amplifier 41.
  • the inductor 31 and the low noise amplifier 41 are connected via a via conductor 91.
  • FIG. 5B is a schematic cross-sectional view of the high-frequency module 500 according to Comparative Example 1.
  • the high-frequency module 500 according to Comparative Example 1 has a module substrate 90, a semiconductor IC 510, a plurality of columnar electrodes 150, filters 21 and 22, an inductor 31, circuit elements 51 and 52, Resin members 80A and 80B.
  • the high-frequency module 500 according to Comparative Example 1 is different from the high-frequency module 1B according to the second embodiment in that the arrangement of the low-noise amplifier 541 in the semiconductor IC 510 is different and the area Ac on the module substrate 90 is also columnar. The difference is that the electrode 150 is arranged.
  • the description of the same configuration as the high-frequency module 1B according to Embodiment 2 will be omitted, and different configurations will be described.
  • the semiconductor IC 510 has a built-in low noise amplifier 541.
  • the inductor 31 and the low noise amplifier 541 are connected via a via conductor 591 and a plane wiring pattern 592.
  • each of the regions Aa, Ab, Ac, Ad between each of the four sides forming the outer edge of the semiconductor IC 510 and each side of the module substrate 90 facing each of the four sides has a columnar electrode. 150 are arranged.
  • the low noise amplifier 541 is not disposed close to the sides 100a to 100d because of the columnar electrode 150 disposed in the region Ac, but is disposed in the central region of the semiconductor IC 510.
  • the inductor 31 is disposed closest to the side 100c among the sides 100a to 100d, and is disposed in an end region of the module substrate 90.
  • the inductor 31 is arranged in the end region of the module substrate 90, unnecessary magnetic field coupling with other components and wiring mounted on the module substrate 90 Alternatively, electrolytic bonding is suppressed.
  • the inductor 31 and the low-noise amplifier 541 are connected by wiring (via conductor 591 and planar wiring pattern 592) having high resistance and large parasitic capacitance, the propagation loss of the high-frequency module 500 increases.
  • FIG. 5C is a schematic sectional view of a high-frequency module 500A according to Comparative Example 2.
  • the high-frequency module 500A according to Comparative Example 2 is different from the high-frequency module 500 according to Comparative Example 1 in the arrangement of the low-noise amplifier 541 and the inductor 31.
  • the inductor 31 is connected to the center of the main surface 90a.
  • the dead space Ds occurs in the outer peripheral region of the main surface 90a, that is, in the region on the main surface 90a that overlaps with the columnar electrode 150 when the main surface 90a is viewed in a plan view. Even if some other component is arranged in the dead space Ds, there is a concern that the component and the inductor 31 may be unnecessarily coupled.
  • the area of the high-frequency module 500A cannot be reduced due to the dead space Ds, and the high-frequency module 500A is not required due to unnecessary coupling between the inductor 31 and other components. High-frequency signal transmission characteristics deteriorate.
  • FIG. 5D is a schematic sectional view of a high-frequency module 500B according to Comparative Example 3.
  • the high-frequency module 500B according to Comparative Example 3 is different from the high-frequency module 500A according to Comparative Example 2 in that the low-noise amplifier 541 and the inductor 31 are further arranged on the center side of the main surface 90a. According to this, the probability that unnecessary coupling between the inductor 31 and other components arranged around the inductor 31 will be further increased.
  • the high-frequency signal transmission characteristics of the high-frequency module 500 deteriorate due to unnecessary coupling between the inductor 31 and other components.
  • the arrangement of the low-noise amplifier 41 and the inductor 31 is optimized in the plan view, and the low-noise amplifier 41 and the inductor 31 are located on the sides 100a to 100d. Are arranged closest to the side 100c.
  • the low noise amplifier 41, the inductor 31, and the via conductor 91 are arranged in a region that is not close to the columnar electrode 150, and are in the end region of the semiconductor IC 10 and are close to the wiring in the module substrate 90. Are arranged in a low area. Therefore, unnecessary magnetic field coupling or electrolytic coupling between the inductor 31 and other circuit elements and wiring is suppressed. Further, since the connection wiring length between the inductor 31 and the semiconductor IC 10 is short and connected by a wiring (via conductor 91) having a low resistance and a small parasitic capacitance, high-frequency noise generated in the preceding stage of the low noise amplifier 41 can be reduced. Therefore, a reduction in the loss and a higher performance of the high-frequency module 1B can be realized.
  • the low-noise amplifier 41 and the inductor 31 are described as a combination arranged closest to the side 100c.
  • the power amplifier and the power It may be a combination with a matching element connected to the output terminal of the amplifier. That is, the combination arranged closest to the side 100c may be an amplifier circuit and a matching element (first component) connected to the amplifier circuit.
  • FIG. 6 is a schematic diagram showing a plan configuration and a cross-sectional configuration of high-frequency module 1C according to Embodiment 3.
  • FIG. 6A shows an arrangement diagram of circuit elements when the main surface 90b of the main surfaces 90a and 90b of the module substrate 90 is viewed from the z-axis negative direction side.
  • FIG. 6B is a cross-sectional view taken along the line VI-VI of FIG. The layout of the circuit elements when the main surface 90a is viewed from the positive z-axis direction is the same as that in FIG.
  • the high-frequency module 1C includes a module substrate 90, a semiconductor IC 10, a plurality of columnar electrodes 150, via conductors 151, filters 21 and 22, an inductor 31, Elements 51 and 52 and resin members 80A and 80B are provided.
  • the high-frequency module 1C shown in the drawing differs from the high-frequency module 1B according to the second embodiment in that a via conductor 151 is arranged.
  • description of the same configuration as high-frequency module 1B according to Embodiment 2 will be omitted, and different configurations will be mainly described.
  • the columnar electrode 150 extends from the main surface 90b to a virtual plane 100q (second virtual plane) farther from the main surface 90b than the virtual plane 100p (first virtual plane).
  • the virtual plane 100q (second virtual plane) is a plane including the surface of the resin member 80B.
  • the area Aa (first area) on the module substrate 90 between the side 190a and the side 100a facing the side 100a, and the side 190b and the side 100b facing the side 100b.
  • the columnar electrode 150 is disposed in each of the region Ab (second region) on the module substrate 90 between the sides and the region Ad on the module substrate 90 between the side 190d and the side 100d facing the side 100d. I have. On the other hand, the columnar electrode 150 is not arranged in the region Ac (third region) on the module substrate 90 between the side 190c and the side 100c facing the side 100c.
  • the via conductor 151 is a second connection electrode extending in the vertical direction from the main surface 10b (fourth main surface) of the semiconductor IC 10 to the surface (virtual plane 100q) of the resin member 80B.
  • Some of the plurality of via conductors 151 are connected to the low-noise amplifier 41 via the via electrodes 140. Some of the plurality of via conductors 151 are connected to land electrodes formed on the module substrate 90 via via electrodes 160 penetrating the semiconductor IC 10.
  • the low-noise amplifier 41 and the inductor 31 are arranged closest to the side 100c of the sides 100a to 100d.
  • the via conductor 151 extending from the main surface 10b (top surface) of the semiconductor IC 10 is disposed in place of the columnar electrode 150 which is no longer disposed in the region Ac on the module substrate 90, so that an electric signal is provided.
  • the high-frequency module 1 ⁇ / b> C can be reduced in area while compensating for taking out, strengthening the ground, and strengthening the mounting with the external board.
  • FIG. 7 is a schematic diagram showing a planar configuration and a cross-sectional configuration of a high-frequency module 1D according to a modification of the third embodiment.
  • FIG. 7A shows an arrangement diagram of the semiconductor IC 10 and the columnar electrode 150 when the main surface 90b of the main surfaces 90a and 90b of the module substrate 90 is viewed from the z-axis negative direction side.
  • FIG. 7B is a cross-sectional view taken along the line VII-VII of FIG. The layout of the circuit elements when the main surface 90a is viewed from the positive z-axis direction is the same as that in FIG.
  • a high-frequency module 1D includes a module substrate 90, a semiconductor IC 10, a plurality of columnar electrodes 150, via conductors 152, filters 21 and 22, an inductor 31, and a circuit element. 51 and 52, resin members 80A and 80B, and a shield electrode 70.
  • the high-frequency module 1D shown in FIG. 6 differs from the high-frequency module 1 according to the first embodiment in that the element arrangement in the semiconductor IC 10 is shown, the via conductor 152 is arranged, and And a shield electrode 70 are provided.
  • a description of the same configuration as that of the high-frequency module 1 according to the first embodiment will be omitted, and different configurations will be mainly described.
  • the columnar electrode 150 is farther away from the main surface 90b than the virtual plane 100p (first virtual plane) in the direction perpendicular to the main surface 90b (z-axis direction). It extends to the virtual plane 100q (second virtual plane).
  • the virtual plane 100q (second virtual plane) is a plane including the surface of the resin member 80B.
  • the columnar electrode 150 is disposed in each of the region Ab (second region) on the module substrate 90 between the sides and the region Ad on the module substrate 90 between the side 190d and the side 100d facing the side 100d. I have.
  • the columnar electrode 150 is not disposed in the region Ac (third region) on the module substrate 90 between the side 190c and the side 100c facing the side 100c.
  • the semiconductor IC 10 has a digital control circuit 11 built therein.
  • the digital control circuit 11 is arranged closest to the side 100c among the sides 100a to 100d.
  • the via conductor 152 is a second connection electrode extending in the vertical direction from the main surface 10b (fourth main surface) of the semiconductor IC 10 to the surface (virtual plane 100q) of the resin member 80B.
  • Some of the plurality of via conductors 152 are connected to the digital control circuit 11 via the via electrodes 110.
  • the digital control circuit 11 since the digital control circuit 11 is arranged in the end region of the semiconductor IC 10, it is not necessary to route the wiring in the module substrate 90, and digital noise (spurious) via the digital wiring is reduced. Flow into the circuit element can be suppressed. Further, the via conductor 152 connected to the top surface of the digital control circuit 11 is disposed near the region Ac where the columnar electrode 150 is not disposed, so that digital noise can be removed, electric signals can be extracted, ground can be enhanced, and In addition, the area of the high-frequency module 1D can be reduced while compensating for the enhancement of mounting with the external substrate.
  • the high-frequency module 1D further includes a shield electrode 70 formed so as to cover at least a side surface of resin member 80B and connected to ground electrode 92G on the side surface.
  • the ground electrode 92G is a planar wiring pattern formed along a direction parallel to the main surfaces 90a and 90b of the module substrate 90.
  • the high-frequency signal output from the semiconductor IC 10, particularly the digital noise output from the digital control circuit 11, can be suppressed from being directly radiated from the high-frequency module 1D to the outside. Further, it is possible to suppress external noise from entering the semiconductor IC 10. Further, the heat generated by the semiconductor IC 10 can be radiated through the shield electrode 70, so that the high-frequency module 1D has improved heat radiation.
  • the shield electrode 70 may not be provided. Further, shield electrode 70 and ground electrode 92G may be arranged in high-frequency module 1C according to the present embodiment.
  • the via conductors 151 and 152 may have a cylindrical shape, or may have a prismatic shape.
  • the via conductors 151 and 152 may be solder balls or connection electrodes such as bump electrodes.
  • the surfaces of the via conductors 151 and 152 may have a spherical shape.
  • the high-frequency module and the communication device according to the first to third embodiments have been described with reference to the above-described embodiment.
  • the high-frequency module and the communication device of the present invention are not limited to the above-described embodiment.
  • Examples and various devices including the high-frequency module and the communication device according to the present disclosure are also included in the present invention.
  • another circuit element, wiring, or the like may be inserted between paths connecting each circuit element and signal path disclosed in the drawings.
  • the semiconductor IC 10 may be realized as an LSI (Large Scale Integration) which is an integrated circuit. Further, the method of circuit integration may be realized by a dedicated circuit or a general-purpose processor. After the LSI is manufactured, a programmable FPGA (Field Programmable Gate Array) or a reconfigurable processor capable of reconfiguring connection and setting of circuit cells inside the LSI may be used. Furthermore, if an integrated circuit technology that replaces the LSI appears due to the progress of the semiconductor technology or another technology derived therefrom, the functional blocks may be naturally integrated using the technology.
  • LSI Large Scale Integration
  • the present invention can be widely used in communication devices such as mobile phones as high-frequency modules that require miniaturization.
  • RFIC RF signal processing circuit
  • BBIC Baseband signal processing circuit
  • Communication device 10 510 Semiconductor IC 10a, 10b, 90a, 90b Main surface 11 Digital control circuit 12, 13, 14 Switch 21, 22 Filter 31 Inductor 41, 541 Low noise amplifier 51, 52 Circuit element 70 Shield electrode 80A, 80B Resin member 90 Module substrate 91, 151, 152, 591 Via conductor 92G Ground electrode 100a, 100b, 100c, 100d, 190a, 190b, 190c, 190d Side 100p, 100q Virtual plane 101 Common terminal 102 Output terminal 110, 140, 160 Via electrode 112, 113, 114, 141 Control Wiring 112s, 113s, 114s, 141s Digital control signal 150 Columnar electrode 592 Planar wiring pattern Aa, Ab, Ac, Ad area La, Lb, Lc, Ld Distance

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)

Abstract

L'invention concerne un module haute fréquence (1) équipé d'un substrat de module (90) comprenant des surfaces principales (90a, 90b), également équipé d'un CI à semi-conducteur (10) comprenant des surfaces principales (10a, 10b) et monté sur la surface principale (90b) d'une manière telle que le substrat de module (90), la surface principale (10a) et la surface principale (10b) sont agencés dans cet ordre, et en outre équipé d'une pluralité d'électrodes colonnaires (150) qui s'étendent dans une direction perpendiculaire à la surface principale (90b) : lorsqu'il est vu d'une vue en plan, le CI à semi-conducteur (10) étant configuré à partir de côtés (100a, 100b) qui sont parallèles les uns aux autres et des côtés (100c, 100d) qui sont parallèles les uns aux autres ; des électrodes colonnaires (150) sont positionnées dans une région (Aa) entre le côté (100a) et un côté (190a) qui fait face au côté (100a) et positionnées dans une région (Ab) entre le côté (100b) et un côté (190b) qui fait face au côté (100b) ; et aucune électrode colonnaire (150) n'est positionnée dans une région (Ac) entre le côté (100c) et un côté (190c) qui fait face au côté (100c).
PCT/JP2019/034054 2018-10-05 2019-08-30 Module haute fréquence et dispositif de communication Ceased WO2020071020A1 (fr)

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JP2018-189923 2018-10-05

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Publication number Priority date Publication date Assignee Title
WO2022131156A1 (fr) * 2020-12-16 2022-06-23 株式会社村田製作所 Module haute fréquence, et dispositif de communication
WO2022209742A1 (fr) * 2021-03-31 2022-10-06 株式会社村田製作所 Module haute fréquence et dispositif de communication
CN115514383A (zh) * 2021-06-03 2022-12-23 株式会社村田制作所 高频模块以及通信装置
CN115552801A (zh) * 2020-05-27 2022-12-30 株式会社村田制作所 高频模块以及通信装置
CN116057842A (zh) * 2020-08-13 2023-05-02 株式会社村田制作所 高频模块以及通信装置
CN116601757A (zh) * 2020-12-11 2023-08-15 株式会社村田制作所 高频模块和通信装置

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WO2012096354A1 (fr) * 2011-01-14 2012-07-19 ミツミ電機株式会社 Module haute fréquence
WO2017170535A1 (fr) * 2016-03-31 2017-10-05 株式会社村田製作所 Module de circuit
WO2018110393A1 (fr) * 2016-12-14 2018-06-21 株式会社村田製作所 Circuit intégré de commutation, module frontal, et dispositif de communication
WO2018110513A1 (fr) * 2016-12-15 2018-06-21 株式会社村田製作所 Élément actif, module haute fréquence et dispositif de communication

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WO2012096354A1 (fr) * 2011-01-14 2012-07-19 ミツミ電機株式会社 Module haute fréquence
WO2017170535A1 (fr) * 2016-03-31 2017-10-05 株式会社村田製作所 Module de circuit
WO2018110393A1 (fr) * 2016-12-14 2018-06-21 株式会社村田製作所 Circuit intégré de commutation, module frontal, et dispositif de communication
WO2018110513A1 (fr) * 2016-12-15 2018-06-21 株式会社村田製作所 Élément actif, module haute fréquence et dispositif de communication

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Publication number Priority date Publication date Assignee Title
CN115552801A (zh) * 2020-05-27 2022-12-30 株式会社村田制作所 高频模块以及通信装置
CN116057842A (zh) * 2020-08-13 2023-05-02 株式会社村田制作所 高频模块以及通信装置
CN116601757A (zh) * 2020-12-11 2023-08-15 株式会社村田制作所 高频模块和通信装置
WO2022131156A1 (fr) * 2020-12-16 2022-06-23 株式会社村田製作所 Module haute fréquence, et dispositif de communication
WO2022209742A1 (fr) * 2021-03-31 2022-10-06 株式会社村田製作所 Module haute fréquence et dispositif de communication
CN115514383A (zh) * 2021-06-03 2022-12-23 株式会社村田制作所 高频模块以及通信装置
CN115514383B (zh) * 2021-06-03 2024-01-30 株式会社村田制作所 高频模块以及通信装置
US11889620B2 (en) 2021-06-03 2024-01-30 Murata Manufacturing Co., Ltd. Radio-frequency module and communication device

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