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WO2020050071A1 - Dispositif de traitement au plasma - Google Patents

Dispositif de traitement au plasma Download PDF

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Publication number
WO2020050071A1
WO2020050071A1 PCT/JP2019/033142 JP2019033142W WO2020050071A1 WO 2020050071 A1 WO2020050071 A1 WO 2020050071A1 JP 2019033142 W JP2019033142 W JP 2019033142W WO 2020050071 A1 WO2020050071 A1 WO 2020050071A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma processing
chamber
processing apparatus
spacer
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/033142
Other languages
English (en)
Japanese (ja)
Inventor
友輔 早坂
雄洋 谷川
周平 山邊
裕貴 町田
俊泳 鄭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2019105393A external-priority patent/JP7240958B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020217008955A priority Critical patent/KR102843560B1/ko
Priority to CN201980054831.8A priority patent/CN112585729B/zh
Priority to US17/272,771 priority patent/US11869750B2/en
Publication of WO2020050071A1 publication Critical patent/WO2020050071A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P50/242—

Definitions

  • the members are not only disposed in the depressurized inner space, but extend from the inner space toward the outside of the chamber so as to be in contact with the atmosphere outside the chamber. It is configured. Therefore, the member can be sufficiently cooled. The member is heated by the heater. Therefore, it is possible to control the temperature of the member.
  • the member may extend along the inner wall of the chamber to prevent by-products of the plasma processing from depositing on the inner wall of the chamber.
  • the chamber body 12 includes a first member 12a and a second member 12b.
  • the first member 12a has a substantially cylindrical shape.
  • the first member 12a forms part of the bottom and side walls of the chamber 10.
  • the second member 12b has a substantially cylindrical shape.
  • the second member 12b is provided on the first member 12a.
  • the second member 12b forms another part of the side wall of the chamber 10.
  • the second member 12b provides an opening 12p.
  • the lower electrode 20 is provided on the electrode plate 24.
  • the lower electrode 20 is electrically connected to the electrode plate 24.
  • the lower electrode 20 has a substantially disk shape.
  • the central axis of the lower electrode 20 substantially coincides with the axis AX.
  • the lower electrode 20 is formed from a conductor such as aluminum.
  • a flow path 20f is formed in the lower electrode 20.
  • the flow path 20f extends, for example, in a spiral shape.
  • a coolant is supplied from the chiller unit 26 to the flow path 20f.
  • the chiller unit 26 is provided outside the chamber 10.
  • the chiller unit 26 supplies, for example, a liquid refrigerant to the flow path 20f.
  • the refrigerant supplied to the flow path 20f is returned to the chiller unit 26.
  • the support 38 is provided on the top plate 36.
  • the support body 38 detachably supports the top plate 36.
  • the support 38 is made of, for example, aluminum.
  • a flow path 38f is formed in the support 38.
  • the flow path 38f extends, for example, in a spiral shape in the support body 38.
  • a coolant is supplied from the chiller unit 40 to the flow path 38f.
  • the chiller unit 40 is provided outside the chamber 10.
  • the chiller unit 40 supplies a liquid refrigerant (for example, cooling water) to the flow path 38f.
  • the refrigerant supplied to the flow path 38f is returned to the chiller unit 40.
  • the chiller unit 40 can supply the coolant to the flow path 38f at a flow rate of, for example, 4 L / min or more.
  • a sealing member such as an O-ring is provided between the main body 62m and the surrounding members to separate the decompressed environment including the internal space 10s from the atmospheric pressure environment.
  • a sealing member 63a is provided between the main body 62m and the member 32.
  • a sealing member 63b is provided between the main body 62m and the member 58.
  • the internal space 10s includes an exhaust area extending below the baffle member 72.
  • An exhaust device 74 is connected to the exhaust region.
  • the exhaust device 74 includes a pressure regulator such as an automatic pressure control valve and a pressure reducing pump such as a turbo molecular pump.
  • FIG. 5 is a diagram schematically illustrating a plasma processing apparatus according to another exemplary embodiment.
  • the plasma processing apparatus 1B shown in FIG. 5 has the member 32B (upper part) instead of the member 32.
  • the other configuration of the plasma processing apparatus 1B is the same as the configuration of the plasma processing apparatus 1.
  • the plasma processing apparatus 1 is a capacitively-coupled plasma processing apparatus, but in another embodiment, the plasma processing apparatus may be another type of plasma processing apparatus.
  • the plasma processing apparatus may be another type of plasma processing apparatus.
  • Examples of another type of plasma processing apparatus include an inductively coupled plasma processing apparatus and a plasma processing apparatus that generates plasma using a surface wave such as a microwave.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Ce dispositif de traitement au plasma d'un mode de réalisation donné à titre d'exemple comprend : une chambre ; un élément ; et un dispositif de chauffage. Un plasma est généré dans l'espace interne de la chambre. L'élément est partiellement disposé dans l'espace interne de la chambre. Le dispositif de chauffage est conçu de façon à chauffer l'élément. L'élément s'étend de l'espace interne vers l'extérieur de la chambre et est exposé à l'espace à l'extérieur de la chambre.
PCT/JP2019/033142 2018-09-06 2019-08-23 Dispositif de traitement au plasma Ceased WO2020050071A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020217008955A KR102843560B1 (ko) 2018-09-06 2019-08-23 플라스마 처리 장치
CN201980054831.8A CN112585729B (zh) 2018-09-06 2019-08-23 等离子体处理装置
US17/272,771 US11869750B2 (en) 2018-09-06 2019-08-23 Plasma processing apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018166972 2018-09-06
JP2018-166972 2018-09-06
JP2019-105393 2019-06-05
JP2019105393A JP7240958B2 (ja) 2018-09-06 2019-06-05 プラズマ処理装置

Publications (1)

Publication Number Publication Date
WO2020050071A1 true WO2020050071A1 (fr) 2020-03-12

Family

ID=69722682

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/033142 Ceased WO2020050071A1 (fr) 2018-09-06 2019-08-23 Dispositif de traitement au plasma

Country Status (1)

Country Link
WO (1) WO2020050071A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114231943A (zh) * 2021-12-13 2022-03-25 深圳优普莱等离子体技术有限公司 一种用于化学气相沉积的二级升降系统及设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162170A (ja) * 1995-12-07 1997-06-20 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP2008505489A (ja) * 2004-06-30 2008-02-21 ラム リサーチ コーポレーション 最適化されたプラズマチャンバ上部部材のための装置
JP2010507231A (ja) * 2006-10-16 2010-03-04 ラム リサーチ コーポレーション 粒子を低減させる機能を持つ上部電極裏当て部材
JP2014130924A (ja) * 2012-12-28 2014-07-10 Tokyo Electron Ltd プラズマ処理容器及びプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162170A (ja) * 1995-12-07 1997-06-20 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP2008505489A (ja) * 2004-06-30 2008-02-21 ラム リサーチ コーポレーション 最適化されたプラズマチャンバ上部部材のための装置
JP2010507231A (ja) * 2006-10-16 2010-03-04 ラム リサーチ コーポレーション 粒子を低減させる機能を持つ上部電極裏当て部材
JP2014130924A (ja) * 2012-12-28 2014-07-10 Tokyo Electron Ltd プラズマ処理容器及びプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114231943A (zh) * 2021-12-13 2022-03-25 深圳优普莱等离子体技术有限公司 一种用于化学气相沉积的二级升降系统及设备

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