[go: up one dir, main page]

WO2020045889A1 - Disjoncteur bidirectionnel à semi-conducteur - Google Patents

Disjoncteur bidirectionnel à semi-conducteur Download PDF

Info

Publication number
WO2020045889A1
WO2020045889A1 PCT/KR2019/010622 KR2019010622W WO2020045889A1 WO 2020045889 A1 WO2020045889 A1 WO 2020045889A1 KR 2019010622 W KR2019010622 W KR 2019010622W WO 2020045889 A1 WO2020045889 A1 WO 2020045889A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
diode
resistor
semiconductor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2019/010622
Other languages
English (en)
Korean (ko)
Inventor
심정욱
장수형
강성희
송웅협
설승기
박동훈
신동호
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SNU R&DB Foundation
LS Electric Co Ltd
Original Assignee
Seoul National University R&DB Foundation
LSIS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190042659A external-priority patent/KR102652596B1/ko
Application filed by Seoul National University R&DB Foundation, LSIS Co Ltd filed Critical Seoul National University R&DB Foundation
Priority to US17/268,307 priority Critical patent/US11482997B2/en
Priority to CN201980056357.2A priority patent/CN112602245B/zh
Publication of WO2020045889A1 publication Critical patent/WO2020045889A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Definitions

  • the present invention relates to a breaker, and more particularly to a bidirectional semiconductor breaker.
  • snubber circuits include capacitor (C) snubber, resistor-capacitor (RC) snubber, and charge-discharge type resistor-capacitor-diode (RCD) snubber and discharge-suppressing type. There may be a snubber circuit.
  • a charge / discharge type RCD snubber 8 having a circuit structure shown in FIG. 1 is generally applied to the semiconductor breaker 10.
  • the charge / discharge type RCD snubber 8 in the process of interrupting the fault current by the semiconductor circuit breaker 10 disposed between the power supply 1 and the load 2, the charge / discharge type RCD snubber 8 until the fault current becomes zero.
  • the C snubber is operated.
  • the snubber is operated as an RC snubber.
  • the voltage of the capacitor is not formed when a failure occurs, it is not possible to immediately reduce the accident current during the blocking operation. That is, because the capacitor needs to be charged above Vdc, the fault current cannot be cut off immediately.
  • the semiconductor circuit breaker 10 'having the discharge-suppressing snubber 8' has an output voltage starting at Vdc.
  • the fault current can be interrupted immediately after the breaker turn-off process. That is, since the capacitor C of the snubber 8 'is charged to Vdc in the normal state, the fault current can be blocked.
  • the semiconductor circuit breaker 10 'having the snubber 8' can suppress an increase in the fault current even after the failure due to the precharged capacitor.
  • the discharge suppression type RCD snubber exhibits improved overvoltage protection and fault current suppression performance compared to the charge / discharge type RCD snubber.
  • the diode of the discharge inhibiting snubber blocks the current path, thereby causing an overvoltage across the semiconductor breaker 10. Therefore, the discharge suppression type RCD snubber cannot be used in the bidirectional snubber circuit of the bidirectional semiconductor circuit breaker.
  • an object of the present invention is a bidirectional semiconductor circuit breaker including a snubber circuit that can be applied to the bidirectional fault current while satisfying the semiconductor protection and current suppression performance To provide.
  • a bidirectional semiconductor circuit breaker including: a main circuit unit connected between a power supply and a load, and having first and second semiconductor switches disposed in series; And a snubber circuit portion connected at one end to a front end of the first semiconductor switch and at the other end to a rear end of the second semiconductor switch.
  • the input unit of the circuit breaker may include a third diode and a third resistor, and may further include a first freewheeling circuit for suppressing an overvoltage generated when the circuit breaker operates.
  • the first freewheeling circuit may include: the third diode connected in parallel with the power supply at a power supply node of the first semiconductor switch; And the third resistor connected in parallel between the third diode and ground.
  • the output of the circuit breaker may further include a second freewheeling circuit including a fourth diode and a fourth resistor.
  • the second freewheeling circuit may include: the fourth diode connected in parallel with the load at a load side node of the second semiconductor switch; And the fourth resistor connected in parallel between the fourth diode and ground.
  • the power source may include a power side inductor component
  • the load may include a load side inductor component
  • the circuit breaker may maintain the voltage of the first capacitor of the snubber circuit unit equal to the voltage of the power supply from t 1 , which is an accident time due to a short circuit. Accordingly, the accident current flowing through the power supply node or the load node at the time t 2 when the first and second semiconductor switches are turned off does not increase any more.
  • the turn-off signal is received from the current sensor at the time t 2 , and the The first and second semiconductor switches can be turned off.
  • fault current I fw may begin to flow through the second freewheeling circuit at the time t 2 . Meanwhile, at a time t 3 after the time t 2 , a current flowing through the first circuit line of the snubber circuit part from the first inductor may be zero. In addition, the fault current I fw may increase until the time t 3 , and may decrease from the time t 3 .
  • a first MOSFET and a first parallel diode may be connected in parallel.
  • a second MOSFET and a second parallel diode may be connected in parallel.
  • the first MOSFET and the second MOSFET may be N-channel MOSFETs.
  • one end and the other end of the first parallel diode may be connected to a source and a drain of the first MOSFET, respectively.
  • one end and the other end of the second parallel diode may be connected to the drain and the source of the second MOSFET, respectively.
  • the first circuit line may be connected in series in the order of the first capacitor and the first diode
  • the second circuit line may be connected in series in the order of the second diode and the second capacitor
  • one end of the third circuit line is connected to the other end of the first capacitor and one end of the first diode, and the other end of the third circuit line is one end of the second diode and the other of the second capacitor. It can be connected with the stage.
  • the first resistor and the second resistor may be connected to a ground point between the first resistor and the second resistor, and the snubber circuit may be point symmetric with respect to the ground point.
  • the first resistor and the second resistor may increase a voltage drop generated by fault current flowing into the snubber circuit.
  • the first resistor and the second resistor may provide the ground point, which is a ground path through which the fault current flows, at a connection point of the first resistor and the second resistor.
  • the semiconductor device may further include a metal oxide varistor (MOV) disposed in parallel with the first and second semiconductor switches and configured to suppress overvoltage.
  • MOV metal oxide varistor
  • the MOV may be configured to dump current flowing through the first and second semiconductor switches to another path when the voltages applied to the first and second semiconductor switches are equal to or greater than a predetermined voltage.
  • the bidirectional semiconductor circuit breaker according to the present invention as described above is to provide a bidirectional semiconductor circuit breaker including a snubber circuit that can be applied to the bidirectional fault current and at the same time satisfy the semiconductor protection and current suppression performance. Accordingly, the semiconductor module of the semiconductor circuit breaker or the switchgear can be easily installed, and the semiconductor circuit breaker having high performance and reliability can be designed.
  • the semiconductor protection performance due to overvoltage can be achieved through the structure of the snubber circuit and the design of the resistor R, the capacitor C, and the diode D in the snubber circuit according to the present invention.
  • fast fault current suppression performance can be achieved through the design of the resistor R in the snubber circuit according to the invention.
  • bidirectional operation against bidirectional fault current may be achieved by considering symmetry in arranging elements inside the snubber circuit according to the present invention.
  • the freewheeling circuit connected in parallel to the load side of the breaker has an effect of discharging the fault current and exhausting the charging energy.
  • the mechanical switch may be opened by a separate signal or delay to maintain physical isolation of the circuit breaker.
  • the bidirectional semiconductor circuit breaker according to the present invention can be implemented by implementing an asymmetric snubber circuit, so that even when an accident occurs on the power supply side in an environment in which there is little power inductance, the current flowing to the power supply side is greater than or equal to the target breaking current. Does not increase.
  • FIG. 1 is an exemplary circuit diagram of a semiconductor circuit breaker to which a general charge / discharge type RCD snubber is applied
  • FIG. 2 is an exemplary circuit diagram of a semiconductor circuit breaker to which a general discharge suppression RCD snubber is applied.
  • FIG. 5 is a diagram illustrating a bidirectional breaker circuit including a snubber circuit capable of bidirectional operation designed according to an exemplary embodiment of the present invention.
  • 6 to 9 are exemplary diagrams for describing a blocking operation when a short circuit accident occurs on a load side in a bidirectional circuit breaker to which a snubber circuit according to an exemplary embodiment of the present invention is applied.
  • FIG. 10 is a diagram illustrating a bidirectional breaker circuit including an asymmetrical snubber circuit designed according to another embodiment of the present invention.
  • 15 to 18 are exemplary diagrams for describing a blocking operation when a short circuit accident occurs in the power supply side in the bidirectional circuit breaker to which the asymmetric snubber circuit according to FIG. 10 is applied.
  • FIG. 19 illustrates a structure of a bidirectional circuit breaker to which a freewheeling circuit is added according to another embodiment of the present invention.
  • 20 to 21 are exemplary diagrams for describing specific operations according to a normal state and a failure in the bidirectional circuit breaker to which the freewheeling circuit of the present invention according to FIG. 19 is added.
  • Figure 22 shows the voltage waveforms applied to the semiconductor switch and the load and the current waveforms at various points in connection with the present invention.
  • 24-25 are exemplary diagrams for describing a detailed operation according to a normal state and a failure in the bidirectional circuit breaker to which the freewheeling circuit of the present invention according to FIG. 19 is added.
  • the designation of 'front' and 'back' for any component is based on the direction of current flow in a steady state. For example, if a breaker is installed between the positive and negative poles of the power source, it flows in the order of 'positive pole of the power source-breaker front-breaker-breaker rear-negative pole of the power source'.
  • a breaker capable of bidirectional blocking is required. Therefore, when applying a solid-state circuit breaker (SSCB), a snubber circuit that can operate in both directions is required to reliably block fault current.
  • SSCB solid-state circuit breaker
  • This type of snubber circuit can be divided into two cases.
  • One is to apply two unidirectional snubber circuits 110 and 120 to enable bidirectional operation as shown in FIG. 3 and the other is a high performance snubber circuit operable in both directions as shown in FIG. 130).
  • the first reactor 101 shows the inductance by the power source 1
  • the second reactor 104 at the front of the load 2 has the load 2 Inductance by
  • two current switches 102 and 103 of the semiconductor circuit breaker SSCB may be turned off with one gate signal to simultaneously block an accident current. Therefore, as shown in FIG. 3, a fault current flows through the parallel diode of the second semiconductor switch 103 until the current reaches 0A. At this time, the reverse current can be energized in the upper limit region of the MOSFET. Therefore, in the case of a SiC MOSFET without a separate external anti-parallel diode, the body diode of the MOSFET having the high conduction voltage characteristic is subjected to thermal stress due to the increased conduction loss. Therefore, snubber circuits of other structures would be desirable to increase the overall reliability and durability of semiconductor circuit breakers (SSCBs) based on SiC MOSFETs without anti-parallel diodes.
  • SSCBs semiconductor circuit breakers
  • FIG. 5 is a diagram illustrating a bidirectional circuit breaker circuit including a snubber circuit 1030 capable of bidirectional operation according to an exemplary embodiment of the present invention.
  • the bidirectional circuit breaker overall circuit 100 includes a main circuit portion connected between the power supply 1 and the load 2.
  • the main circuit unit includes a first semiconductor switch (MOSFET) 1001 and a second semiconductor switch (MOSFET) 1002 connected in series.
  • MOSFET first semiconductor switch
  • MOSFET second semiconductor switch
  • the reactor 1003 showing the inductance component generated by the load 2 can be considered. In the steady state, current flows out of the positive pole of the power source 1 and flows through the load 2 into the negative pole of the power source 1.
  • the snubber circuit portion 1030 is connected to the front end of the first MOSFET switch 1001 and the other end in parallel to the rear end of the second MOSFET switch 1002.
  • the first and second MOSFET switches 1001 and 1002 may express one end and the other end as a front end and a rear end in consideration of directionality. That is, one end and the other end of the snubber circuit unit 1030 are connected to the front end and the rear end which are different end portions of the first and second MOSFET switches 1001 and 1002, respectively.
  • the first and second MOSFET switches 1001 and 1002 are formed by connecting a MOSFET device and a diode in parallel.
  • the diode may be a switch that is turned on / off based on the applied voltage, so that the first and second MOSFET switches 1001 and 1002 are connected in parallel with a MOSFET device and a switching device. It is configured.
  • a snubber circuit unit 1030 that is bidirectionally operated is provided between the source node SOURCE and the load node LOAD.
  • the snubber circuit unit 1030 includes a first capacitor 1031 and a first diode 1033 (ie, a first circuit line) connected in series, a second diode 1034 and a first capacitor 1035 connected in series, and ( That is, the second circuit lines are arranged in parallel. Accordingly, the capacitors and diodes of the first circuit line and the second circuit line are symmetrical.
  • the capacitors 1031 and 1035 serve to protect the overvoltage of the semiconductor switch during the blocking process.
  • an accident current flows into the snubber circuit portion 1030 by the resistor 1032 to increase the voltage drop generated. Accordingly, it serves to rapidly reduce the fault current, and at the same time, it also serves as a semiconductor switch overvoltage protection by providing a ground path through which the fault current can flow.
  • the diodes 1033 and 1034 serve to suppress the occurrence of unexpected overvoltage due to the voltage drop of the resistor.
  • 6 to 9 are exemplary diagrams for describing a blocking operation when a short circuit accident occurs on a load side in a bidirectional circuit breaker to which a snubber circuit according to an exemplary embodiment of the present invention is applied.
  • the snubber circuit according to the present invention can be applied to both the asymmetrical case where the magnitude of the inductance component of the power supply 1 side and the inductance component of the load 2 side of the semiconductor breaker are symmetrical. Thus, in both cases it has excellent voltage protection and fault current suppression performance.
  • the semiconductor circuit breaker circuit according to the present invention can be applied to the bidirectional circuit breaker because the bidirectional operation is possible.
  • the semiconductor breaker circuit is a complete point symmetry structure with respect to the ground node between resistors.
  • the semiconductor circuit breaker circuit according to the present invention can be applied to a bidirectional circuit breaker.
  • a second current flow 802 is generated while the second capacitor of the second circuit line is discharged to prevent overvoltage.
  • the current flow 801 is now directed from the source node SOURCE to the load node LOAD via the first capacitor and the first diode of the first circuit line, not the first MOSFET switch, and thus the MOSFET switch from overvoltage.
  • the reactor L passes through the load node LOAD, the second capacitor of the second circuit line, the plurality of resistors, and the first capacitor of the first circuit line.
  • Reverse current flow 902 is generated that passes through to the power supply side.
  • the semiconductor switch overvoltage protection and the rapid suppression of the fault current are possible in both directions.
  • the difference from the symmetric snubber circuit shown in FIG. 5 is that one resistor R2 is disposed between the first circuit line and the second circuit line, and the other resistor R1 is disposed between the first circuit line and the second circuit line. It is not placed between circuit lines. In this case, the other resistor R1 is disposed adjacent to the second capacitor of the second circuit line. In this case, however, the two resistors R1 and R2 are connected in series.
  • the asymmetric snubber circuit 1430 is disposed in parallel with the first switch S1 1401 and the second switch S2 1402 disposed in series between the power supply 1 and the load 2. .
  • the reactor 1403 shows the inductance by the load 2.
  • one end of the first resistor 1432a may be connected to a connection point of the first capacitor 1431 and the first diode 1433.
  • the other end of the first resistor 1432a may be connected to a connection point of the second capacitor 1435 and the second diode 1434.
  • the first circuit line in which the first capacitor 1431 and the first diode 1433 are arranged in series, and the second circuit line in which the second diode 1434 and the second capacitor 1435 are arranged in series are first formed. It is arranged in parallel with one resistor 1432a interposed therebetween.
  • the second resistor 1432b is connected in series with the first resistor 1432a, but unlike FIG. 5, the second resistor 1432b is disposed adjacent to the second capacitor C2 without being disposed between the first circuit line and the second circuit line.
  • an asymmetric snubber circuit is formed unlike the snubber circuit of FIG. 5, which is symmetrical with respect to the third circuit line including the resistor.
  • the expanded asymmetric snubber circuit can be used as a snubber circuit of a semiconductor circuit breaker through the proper design of R, C, and D in asymmetrical inductance.
  • FIGS. 15 to 18 are diagrams for describing a blocking operation when a short circuit accident occurs on a load side in the bidirectional circuit breaker to which the asymmetric snubber circuit according to FIG. 14 is applied.
  • 19 to 22 are exemplary diagrams for describing a blocking operation when a short circuit accident occurs on the power supply side in the bidirectional circuit breaker to which the asymmetric snubber circuit according to FIG. 14 is applied.
  • FIG. 11 shows a current flow 1501 flowing through the source node SOURCE, the first switch S1, the second switch S2, the load node LOAD, and the reactor L in the steady state.
  • 12 is an abnormal current flow 1601 in which the Vdc voltage is accumulated in the reactor 1610 in response to a short circuit accident occurring on the load side.
  • FIG. 13 illustrates that a current flow 1702 flowing to the resistor R1 to form a ground path encounters the resistors R1 and R2, the first diode D1, and the second capacitor C2 at the load node LOAD. Show the flow to (L).
  • FIG. 13 illustrates that a current flow 1702 flowing to the resistor R1 to form a ground path encounters the resistors R1 and R2, the first diode D1, and the second capacitor C2 at the load node LOAD. Show the flow to (L).
  • a ground path of the first reverse current flow 1802a flowing to the reactor L, the load node LOAD, the second capacitor C2, and the resistor R2 is formed.
  • a ground path of the second reverse current flow 1802b toward the power supply side is formed through the resistor R1, the first capacitor C1, and the source node SOURCE.
  • a current flow 2001 in the same direction as the current flow 1901 of FIG. 19 is formed.
  • the resistor R1 current flows toward the power source through the resistor R1, the second capacitor C2, the load node LOAD, the second switch S2, the first switch S1, and the source node SOURCE 2002. Is generated.
  • the resistor R1 current flow 2102 is turned around the resistor R1, the resistor R2, the first capacitor C1, and the second diode D2 to the power supply side via the source node LOAD.
  • the fault current flow 2101 due to a short circuit accident does not go through the semiconductor switches S1 and S2, and the reactor L, the load node LOAD, the second capacitor C2, the first capacitor C1, The second diode D2 is turned and the path is changed to the source node SOURCE. Thereafter, a first reverse current flow 2202b is formed from the source node LOAD to the ground of the first capacitor C1, the resistor R2, and the resistor R1.
  • the semiconductor switch is protected by generating the resistor R1, the second capacitor C2, the load node LOAD, the reactor L, and the second reverse current flow 2202a directed to the load side.
  • FIG. 19 illustrates a structure of a bidirectional circuit breaker to which a freewheeling circuit is added, according to another exemplary embodiment.
  • 20 to 21 and 24-25 are exemplary diagrams for describing specific operations according to a normal state and a failure in the bidirectional circuit breaker to which the freewheeling circuit of the present invention according to FIG. 19 is added.
  • the bidirectional breaker to which the freewheeling circuit of the present invention is added may include a main circuit portion, a snubber circuit portion 2330, and first and second freewheeling circuits 2231 and 2342.
  • the main circuit unit is connected between the power supply and the load Z system , and is configured such that the first and second semiconductor switches 2301 and 2302 are disposed in series.
  • the snubber circuit unit 2330 is configured such that one end thereof is connected to the front end of the first semiconductor switch 2301 and the other end thereof is connected in parallel to the rear end of the second semiconductor switch 2302.
  • the first semiconductor switch 2301 may be configured such that the first MOSFET and the first parallel diode are connected in parallel.
  • the second semiconductor switch 2301 may be configured such that the second MOSFET and the second parallel diode are connected in parallel.
  • the snubber circuit unit 2330 includes a first circuit line in which the first capacitors 2331 and Cs and the first diodes 2333 and Ds are arranged in series.
  • the snubber circuit unit 2330 may further include a second circuit line connected in parallel with the first circuit line and having a second diode diode 2334 and Ds and a second capacitor 2335 and Cs arranged in series.
  • the first circuit line may be connected in series in the order of the first capacitor 2331 and the first diode 2333 and the second circuit line may be connected in series in the order of the second diode 2334 and the second capacitor 2335.
  • first resistor 2332a and the second resistor 2332b may be connected to the ground point between the first resistor 2332a and the second resistor 2332b.
  • the snubber circuit unit 2330 may be configured in a point symmetrical form with respect to the ground point.
  • the first resistor 2332a and the second resistor 2332b may provide a ground point, which is a ground path through which an accident current flows, at a connection point between the first resistor 2332a and the second resistor 2332b.
  • the first resistor 2332a and the second resistor 2332b are configured in the form of a non-linear resistor element and may be connected in series.
  • the first freewheeling circuit 2341 is composed of a third diode Df and a third resistor Rf at an input portion of the circuit breaker, and is configured to suppress an overvoltage generated during the breaking operation of the circuit breaker.
  • the first freewheeling circuit 2341 includes a third diode Df connected in parallel with the power supply at the power supply node of the first semiconductor switch 2301.
  • the first freewheeling circuit 2341 further includes a third resistor Rf connected in parallel between the third diode Df and ground.
  • the second freewheeling circuit 2341 includes a fourth diode Df and a fourth resistor at the output of the circuit breaker.
  • the second freewheeling circuit 2341 includes a fourth diode Df connected in parallel with the load Z system at a load side node of the second semiconductor switch 2302.
  • the second freewheeling circuit 2341 further includes a fourth resistor Rf connected in parallel between the fourth diode Df and the ground.
  • the power supply may include a power supply side inductor component
  • the load Z system may include a load side inductor component.
  • the power supply side inductor component may be equivalent to the first inductor L1 connected to the power supply.
  • the load side inductor component may be equivalent to the second inductor L2 connected to the load Z system .
  • a freewheeling circuit including a diode Df and a resistor Rf may be added across the breaker.
  • the added freewheeling circuit can suppress the overvoltage generated during the breaking operation of the breaker due to the inductance on the fault point side.
  • the normal current flows to the load side through the L1 and L2 and the semiconductor breaker in the normal state as shown in FIG.
  • Cs (C1, C2) of the snubber circuit are in a state where the power supply voltage Vdc is charged.
  • FIG. 22 illustrates a voltage waveform applied to a semiconductor switch and a load and a current waveform at various points in accordance with the present invention.
  • V SSCB and V Load represent voltage waveforms applied to the semiconductor switch and the load according to time, respectively.
  • the reflux circuit is not separately provided, but the function of the reflux circuit is simultaneously performed when the snubber circuit is operated.
  • the reason why the fault current I L2 at L2 is larger than the fault current I L1 at L1 in FIG. 26A (b) is because the snubber R value is small and the resistance at the top and the current discharged through the diode are added up.
  • FIG. 23 illustrates voltage waveforms applied to the semiconductor switch and the load and current waveforms at various points according to the present invention.
  • V SSCB and V Load represent voltage waveforms applied to the semiconductor switch and the load according to time, respectively.
  • FIG. 23A illustrates a voltage waveform applied to a semiconductor switch and a load according to the present invention.
  • Figure 23 (b) shows the current waveform flowing through the power supply side, load side inductance according to the present invention.
  • 23 (c) shows the fault current waveform and the semiconductor switch current waveform according to the present invention.
  • the current flowing through the semiconductor switch increases at t 1 , which is an accident point due to a short circuit.
  • the current flowing through the semiconductor switch at an accident time t 1 may increase from 100 A to 400 A at time t 2 .
  • the turn-off signal may be transmitted to the semiconductor switch from inside or outside the semiconductor breaker.
  • the first and second semiconductor switches 2301 and 2302 may be turned off at time t 2. Can be.
  • the semiconductor switch is turned off at time t 2 , and the current I sw flowing through the semiconductor switch becomes zero.
  • the current interruption time t 2 -t 1 according to the turn-off of the semiconductor switch is about 400 to 500ns, the current interruption can be made quickly.
  • the voltage of the snubber capacitor Cs may be maintained at Vdc equal to the voltage of the power supply circuit before t 1 , which is an accident time point. That is, the voltage of the first capacitor Cs of the snubber circuit unit 2330 may be maintained to be the same as the voltage of the power supply Vdc before t 1 , which is an accident time due to a short circuit.
  • the present invention allows the voltage of the power supply circuit and the snubber capacitor Cs to be the same voltage value. As a result, the fault current (i.e., the current flowing to the power node or the load node) no longer increases.
  • the voltage applied to the semiconductor switch at time t 2 converges to a predetermined value within a predetermined time without exceeding a maximum allowable voltage value.
  • the current at the time t 2 is not to increase more than in the 400A, it is zero at time point t 2.
  • the energy charged in the power supply side inductance L1 may be charged in excess of the power supply voltage to Cs (C1).
  • the snubber capacitor Cs should select the voltage and capacity in consideration of the breakdown voltage of the semiconductor device responsible for blocking. To this end, the voltage across the breaker can be expressed as Equation 2.
  • snubber capacitance Cs should be determined as in Equation (3).
  • the fault current I fw begins to flow through the second freewheeling circuit 2342 at a time t 2 at which the semiconductor switch is blocked. Also, at time t 3 after the time t 2 , the current flowing through the first circuit line of the snubber circuit unit 2300 from the first inductor L1 becomes zero. On the other hand, the fault current I fw is the t continues to increase until time point 3, and decreases from the time t 3. That is, after time t 3 , I fw flowing through the first and second freewheeling circuits 2231 and 2342 gradually decreases.
  • the breaker must be bidirectional blocking, so the freewheeling circuit should be installed on both the left and right sides of the breaker circuit. If an accident occurs on the power supply side of the breaker, the freewheeling circuit on the power supply side connected in parallel with the load side of the breaker should cut off the fault current and exhaust the charging energy by L1. In addition, the energy caused by the load-side inductance L2 is also prevented from overvoltage generated when the energy is interrupted through Cs (C2) of the snubber circuit as described in the example of FIG.
  • Figure 26 is a circuit structure for connecting a mechanical switch in series with the left and right both ends or one contact in series with the semiconductor circuit breaker. Therefore, the circuit breaker according to the present invention may be configured with a circuit structure for connecting the mechanical switches (2351 to 2354) in series with the left and right both ends or one contact in series with the breaker to ensure physical insulation and overvoltage protection after the interruption is completed. have.
  • the mechanical switches 2351 to 2354 may be opened through separate signals or time delays to maintain physical insulation of the circuit breaker.
  • the metal oxide varistor (MOV) may be configured to be disposed in parallel with the first and second semiconductor switches 2301 and 2302 to suppress overvoltage.
  • the MOV may be configured to dump the current to another path when the voltages applied to the first and second semiconductor switches 2301 and 2302 are greater than or equal to a predetermined voltage.
  • the current path may be changed to the path by the MOV instead of the path by the first and second semiconductor switches 2301 and 2302 and the snubber circuit unit 2330.
  • the bidirectional semiconductor circuit breaker according to the present invention provides a bidirectional semiconductor circuit breaker including a snubber circuit capable of applying to a bidirectional fault current and satisfying semiconductor protection and current suppression performance.
  • the semiconductor module of the semiconductor circuit breaker or the switchgear is easily installed, and the semiconductor circuit breaker having high performance and reliability can be designed.
  • the semiconductor protection performance due to overvoltage can be achieved through the structure of the snubber circuit according to the present invention and the design of resistors R, capacitors C, and diodes D in the snubber circuit.
  • fast fault current suppression performance can be achieved through the design of the resistor R in the snubber circuit according to the invention.
  • a circuit for suppressing a voltage increase such as a varistor or an arrester may be added in parallel with both ends of the semiconductor circuit breaker circuit in order to suppress the voltage rise across the semiconductor breaker caused by the inductance during the circuit breaker operation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

La présente invention concerne un disjoncteur bidirectionnel à semi-conducteur. Le disjoncteur bidirectionnel à semi-conducteur selon un mode de réalisation de la présente invention comprend : une unité de circuit primaire qui est connectée entre une source d'alimentation et une charge et dans laquelle un premier commutateur à semi-conducteur et un second commutateur à semi-conducteur sont disposés en série ; et une unité de circuit d'amortissement dont une première extrémité est connectée en parallèle à l'extrémité avant du premier commutateur à semi-conducteur et dont l'autre extrémité est connectée en parallèle à l'extrémité arrière du second commutateur à semi-conducteur. Dans ce cas, l'unité de circuit d'amortissement peut comprendre : une première ligne de circuit dans laquelle un premier condensateur et une première diode sont disposés en série ; une deuxième ligne de circuit qui est connectée en parallèle à la première ligne de circuit et dans laquelle un second condensateur et une seconde diode sont disposés en série ; et une troisième ligne de circuit dont une extrémité et l'autre extrémité sont respectivement connectées à la première ligne de circuit et à la deuxième ligne de circuit, et dans lequel une première résistance et une seconde résistance sont disposées en série, et peuvent ainsi établir un circuit d'amortissement qui est applicable à un courant de défaut bidirectionnel et qui satisfait une protection de semi-conducteur et une performance de limitation de courant.
PCT/KR2019/010622 2018-08-27 2019-08-21 Disjoncteur bidirectionnel à semi-conducteur Ceased WO2020045889A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US17/268,307 US11482997B2 (en) 2018-08-27 2019-08-21 Bidirectional semiconductor circuit breaker
CN201980056357.2A CN112602245B (zh) 2018-08-27 2019-08-21 双向半导体断路器

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20180100543 2018-08-27
KR10-2018-0100543 2018-08-27
KR1020190042659A KR102652596B1 (ko) 2018-08-27 2019-04-11 양방향 반도체 차단기
KR10-2019-0042659 2019-04-11

Publications (1)

Publication Number Publication Date
WO2020045889A1 true WO2020045889A1 (fr) 2020-03-05

Family

ID=69645297

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2019/010622 Ceased WO2020045889A1 (fr) 2018-08-27 2019-08-21 Disjoncteur bidirectionnel à semi-conducteur

Country Status (1)

Country Link
WO (1) WO2020045889A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115133506A (zh) * 2022-07-25 2022-09-30 河北工业大学 单驱动控制的串联SiC MOSFET直流固态断路器及配电系统
US20230216291A1 (en) * 2020-05-29 2023-07-06 Ls Electric Co., Ltd. Solid insulated switch

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183838A1 (en) * 2002-03-22 2003-10-02 Qin Huang Solid-state DC circuit breaker
KR100434153B1 (ko) * 2002-04-12 2004-06-04 엘지산전 주식회사 하이브리드 직류 전자 접촉기
US20140029152A1 (en) * 2012-03-30 2014-01-30 Semisouth Laboratories, Inc. Solid-state circuit breakers
US20140078622A1 (en) * 2012-09-17 2014-03-20 Ge Energy Power Conversion Technology Ltd Circuit breakers
JP2017130391A (ja) * 2016-01-21 2017-07-27 国立大学法人東京工業大学 回路遮断装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183838A1 (en) * 2002-03-22 2003-10-02 Qin Huang Solid-state DC circuit breaker
KR100434153B1 (ko) * 2002-04-12 2004-06-04 엘지산전 주식회사 하이브리드 직류 전자 접촉기
US20140029152A1 (en) * 2012-03-30 2014-01-30 Semisouth Laboratories, Inc. Solid-state circuit breakers
US20140078622A1 (en) * 2012-09-17 2014-03-20 Ge Energy Power Conversion Technology Ltd Circuit breakers
JP2017130391A (ja) * 2016-01-21 2017-07-27 国立大学法人東京工業大学 回路遮断装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230216291A1 (en) * 2020-05-29 2023-07-06 Ls Electric Co., Ltd. Solid insulated switch
US12278483B2 (en) * 2020-05-29 2025-04-15 Ls Electric Co., Ltd. Solid insulated switch
CN115133506A (zh) * 2022-07-25 2022-09-30 河北工业大学 单驱动控制的串联SiC MOSFET直流固态断路器及配电系统

Similar Documents

Publication Publication Date Title
KR102652596B1 (ko) 양방향 반도체 차단기
WO2015053484A1 (fr) Dispositif et procédé pour bloquer un courant continu à haute tension
CN104756338B (zh) 电路中断设备
US6075684A (en) Method and arrangement for direct current circuit interruption
WO2015102383A1 (fr) Disjoncteur à courant continu haute tension
WO2016043508A1 (fr) Appareil et procédé de coupure de courant continu
KR101026072B1 (ko) 충전/방전 보호 회로
WO2022211605A1 (fr) Disjoncteur mettant en œuvre un semi-conducteur
WO2015099468A1 (fr) Disjoncteur continu bidirectionnel
WO2016167490A1 (fr) Dispositif et procédé pour couper un courant continu haute tension au moyen d'un interrupteur à écartement
WO2021241871A1 (fr) Commutateur isolé solide
WO2016108524A1 (fr) Disjoncteur à courant continu à haute tension
EP4117162B1 (fr) Système de conversion de puissance
WO2017095188A1 (fr) Disjoncteur à courant continu du type à suppression d'arc utilisant un interrupteur à semi-conducteur
WO2016108528A1 (fr) Disjoncteur de circuit à courant continu cc
WO2020130258A9 (fr) Interrupteur de transfert d'énergie pour protection contre les surintensités
WO2020045889A1 (fr) Disjoncteur bidirectionnel à semi-conducteur
WO2022211269A1 (fr) Unité de protection de batterie et procédé de commande pour unité de protection de batterie
JP7264920B2 (ja) 電気エネルギーの過電流および過電圧保護された移送のための多段保護装置
WO2017034322A1 (fr) Disjoncteur de circuit à courant continu
WO2021034152A1 (fr) Sous-module de convertisseur de puissance présentant un commutateur de dérivation
WO2019139276A1 (fr) Disjoncteur à courant continu
WO2019078510A1 (fr) Dispositif de protection de courant continu et son procédé de commande
WO2020022674A1 (fr) Dispositif de limitation de courant et système de disjoncteur à courant continu le comprenant
CN207149448U (zh) 直流断路器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19855136

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19855136

Country of ref document: EP

Kind code of ref document: A1