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WO2020040370A1 - Poignée de support et procédé de fabrication d'une batterie solaire à semi-conducteur composé l'utilisant - Google Patents

Poignée de support et procédé de fabrication d'une batterie solaire à semi-conducteur composé l'utilisant Download PDF

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Publication number
WO2020040370A1
WO2020040370A1 PCT/KR2019/000300 KR2019000300W WO2020040370A1 WO 2020040370 A1 WO2020040370 A1 WO 2020040370A1 KR 2019000300 W KR2019000300 W KR 2019000300W WO 2020040370 A1 WO2020040370 A1 WO 2020040370A1
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WIPO (PCT)
Prior art keywords
layer
compound semiconductor
film
adhesive
support handle
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Ceased
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PCT/KR2019/000300
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English (en)
Korean (ko)
Inventor
신용일
허윤호
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LG Electronics Inc
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LG Electronics Inc
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Publication of WO2020040370A1 publication Critical patent/WO2020040370A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10P54/00—
    • H10P95/112—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a support handle and a method for manufacturing a compound semiconductor solar cell using the same. )to be.
  • the present invention relates to a support handle capable of stably separating a compound semiconductor layer from a mother substrate without damage after an epitaxial lift off (ELO) process, and a method of manufacturing a compound semiconductor solar cell using the same.
  • ELO epitaxial lift off
  • a compound semiconductor solar cell is a method of manufacturing a compound semiconductor solar cell by using a mother substrate (GaAs wafer or Ge wafer) for forming the compound semiconductor layer together as a component of the solar cell without separating from the compound semiconductor layer, or ELO
  • the mother substrate (GaAs wafer or Ge wafer) is separated from the compound semiconductor layer by removing the sacrificial layer using an epitaxial lift off process, and only the compound semiconductor layer is used as a component of the solar cell. It can manufacture by the method of manufacturing.
  • an Epitaxial Lift Off (ELO) process prevents damage to the compound semiconductor layer and uses a support handle for supporting the compound semiconductor layer in a subsequent step.
  • ELO Epitaxial Lift Off
  • the support handles used in the related art can be used only once because of shrinkage of the support handle material generated in the ELO process and deformation of the adhesive layer for bonding the support handle to the compound semiconductor layer, thereby increasing the manufacturing cost of the compound semiconductor solar cell. There is a problem.
  • the present invention can be reused to reduce the manufacturing cost of the compound semiconductor solar cell, and a support handle that can stably separate the compound semiconductor layer from the mother substrate after the Epitaxial Lift Off (ELO) process and the compound semiconductor using the same It is an object to provide a method of manufacturing a solar cell.
  • ELO Epitaxial Lift Off
  • a support handle includes: a flexible substrate; An adhesive layer located on one side of the flexible substrate; And a foam type self-adhesive film adhered to the flexible substrate by the adhesive layer and having a self-adhesive surface on a surface opposite to the surface bonded to the adhesive layer.
  • the foam type self-adhesive film may be formed of any one material selected from acrylic, polyurethane, and polyethylene, and may be peeled at a temperature of 30 ° C. to 60 ° C.
  • a plurality of pores are formed on the self-adhesive surface, and the plurality of pores may be further formed inside the foam type self-adhesive film.
  • the plurality of pores formed on the self-adhesive surface and the plurality of pores further formed inside the self-adhesive film may be formed in non-uniform size, and may be distributed non-uniformly.
  • the flexible substrate may be formed of any one selected from glass, polypropylene, polyethylene, polycarbonate, polyurethane, and has a thickness of 100 ⁇ m or more. It may have acid resistance and solvent resistance.
  • Method for producing a compound semiconductor solar cell using the support handle of this configuration forming a sacrificial layer on one side of the mother substrate; Forming a compound semiconductor layer on the sacrificial layer; Attaching an epitaxial lift off (ELO) film on the compound semiconductor layer; Performing an ELO process; Attaching a support handle to the ELO film; And separating the compound semiconductor layer from the mother substrate by using the support handle.
  • ELO epitaxial lift off
  • the adhesive layer of the support handle can be prevented from being damaged by the hydrofluoric acid used in the ELO process. No shrinkage deformation of the flexible substrate of the support handle occurs.
  • the support handle has a foam-type self-adhesive film having a plurality of pores formed on the self-adhesive surface
  • the support handle when the support handle is attached to the ELO film, bubbles placed between the self-adhesive surface and the ELO film are self-adhesive surfaces. Since it is trapped by the pores formed in the film, the bubbles between the ELO film and the self-adhesive film can be suppressed from decreasing the adhesive force between the support handle and the ELO film.
  • the self-adhesive film firmly adhered to the ELO film can be easily peeled from the ELO film due to thermal expansion of air trapped in pores of the self-adhesive surface under constant temperature conditions (30 ° C. to 60 ° C.). It is possible to suppress the self-adhesive film from being peeled from the ELO film due to carelessness of the operator while handling the support handle, and can effectively peel off the self-adhesive film without damaging the compound semiconductor layer.
  • the support handle After peeling the support handle from the ELO film, the support handle can be reused after cleaning the self-adhesive surface.
  • the manufacturing cost of the compound semiconductor solar cell can be reduced, and the compound semiconductor layer can be stably separated from the mother substrate after the ELO process without damage.
  • FIG. 1 is a perspective view of a compound semiconductor solar cell.
  • FIG. 2 is a cross-sectional view of a support handle according to an embodiment of the present invention.
  • FIG. 3 is a photograph of the self-adhesive surface shown in FIG. 2.
  • FIG. 4 is a process chart showing a method for manufacturing a compound semiconductor solar cell using the support handle shown in FIG. 2.
  • Figure 5 is a photograph comparing the embodiment of the present invention using a conventional foam type self-adhesive tape with a conventional adhesive tape.
  • first and second may be used to describe various components, but the components may not be limited by the terms. The terms may be used only for the purpose of distinguishing one component from another component.
  • the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.
  • the term "and / or” may include a combination of a plurality of related items or any of a plurality of related items.
  • a component When a component is said to be “connected” or “coupled” to another component, it may be directly connected to or coupled to the other component, but other components may be present in the middle. Can be understood.
  • FIG. 3 is a block diagram illustrating a method of manufacturing a compound semiconductor solar cell according to the present invention
  • FIG. 4 is a process diagram illustrating the manufacturing method of FIG. 3 in detail.
  • FIG. 5 is a cross-sectional view illustrating various embodiments of the first protective layer and the second protective layer illustrated in FIG. 4, and FIG. 6 is a perspective view of the compound semiconductor solar cell manufactured by the manufacturing method of FIG. 4.
  • the compound semiconductor solar cell includes a light absorbing layer PV, a window layer 10 positioned on the front surface of the light absorbing layer PV, a front electrode 20 positioned on the front surface of the window layer 10, and a window layer ( 10) the front contact layer 30 positioned between the front electrode 20, the antireflection film 40 positioned on the window layer 10, the rear contact layer 50 positioned on the rear surface of the light absorbing layer PV, and
  • the rear electrode 60 may include a rear electrode 60 positioned on the rear surface of the rear contact layer 50.
  • At least one of the anti-reflection film 40, the window layer 10, the front contact layer 30, and the rear contact layer 50 may be omitted, but as shown in FIG. It demonstrates as an example.
  • the light absorbing layer PV may include a III-VI semiconductor compound, a p-type semiconductor layer PV-p doped with impurities of a first conductivity type (eg, p-type impurities), and a second conductivity It may include an n-type semiconductor layer (PV-n) doped with a type of impurities (for example, n-type impurities).
  • the light absorbing layer (PV) of this configuration can be prepared from a mother substrate by a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method or any other suitable method for forming an epitaxial layer. Can be.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the window layer 10 may be formed between the light absorbing layer PV and the front electrode 20, and may be formed by doping a group III-VI semiconductor compound with impurities of a second conductivity type.
  • the window layer 10 may not include n-type or p-type impurities, and functions to passivate the front surface of the light absorbing layer PV.
  • the anti-reflection film 40 may be located on the remaining area of the window layer 10 except for the area where the front electrode 20 and / or the front contact layer 30 is located.
  • the anti-reflection film 40 may be disposed on the front contact layer 30 and the front electrode 20 as well as the exposed window layer 10.
  • the compound semiconductor solar cell may further include a busbar electrode for physically connecting the plurality of front electrodes 20, and the busbar electrode is not covered by the anti-reflection film 40 and exposed to the outside. Can be.
  • the antireflection film 40 having such a configuration may include magnesium fluoride, zinc sulfide, titanium oxide, silicon oxide, derivatives thereof, or a combination thereof.
  • the front electrode 20 may be formed to extend in the first direction X-X ', and the plurality of front electrodes 20 may be spaced apart at regular intervals along the second direction Y-Y' perpendicular to the first direction. .
  • the front electrode 20 having such a configuration may be formed by including an electrically conductive material.
  • the front electrode 20 may include at least one of gold (Au), germanium (Ge), and nickel (Ni).
  • the front contact layer 30 positioned between the window layer 10 and the front electrode 20 is formed by doping the group III-VI semiconductor compound with a second impurity at a doping concentration higher than the impurity doping concentration of the window layer 10. can do.
  • the front contact layer 30 forms an ohmic contact between the window layer 10 and the front electrode 20.
  • the rear contact layer 50 located on the rear of the rear electric field layer may be a light absorbing layer ( It is located on the back of the PV) as a whole, and may be formed by doping the III-VI semiconductor compound with a doping concentration higher than that of the p-type semiconductor layer PV-p.
  • the back contact layer 50 may form an ohmic contact with the back electrode 160.
  • the rear electrode 60 positioned on the rear surface of the rear contact layer 50 may be formed of a sheet-shaped conductor located entirely on the rear surface of the rear contact layer 50. That is, the rear electrode 60 may also be referred to as a sheet electrode positioned on the entire rear surface of the rear contact layer 50.
  • the rear electrode 60 may be formed in the same plane as the light absorbing layer PV, and may include gold (Au), platinum (Pt), titanium (Ti), tungsten (W), silicon (Si), and nickel (Ni). ), Magnesium (Mg), palladium (Pd), copper (Cu), and germanium (Ge) may be formed as a single film or a multi-layer including at least one material selected from, and the material forming the rear electrode is It may be appropriately selected depending on the conductivity type of the contact layer.
  • FIG. 1 is a block diagram illustrating a method of manufacturing a compound semiconductor solar cell according to a first embodiment of the present invention
  • FIG. 2 is a process diagram illustrating the manufacturing method of FIG. 1 in detail.
  • FIG. 3 is a block diagram illustrating a method of manufacturing a compound semiconductor solar cell according to a second embodiment of the present invention
  • FIG. 4 is a process diagram illustrating the manufacturing method of FIG. 3 in detail
  • FIG. 1 is a cross-sectional view showing various embodiments of the protective layer and the second protective layer.
  • FIGS. 1 and 2 a manufacturing method according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
  • the manufacturing method of the first embodiment is large, forming a sacrificial layer on one side of the mother substrate (S110); Forming a compound semiconductor layer on the sacrificial layer (S120); Attaching a first lamination film on the first surface of the compound semiconductor layer (S130); Separating the compound semiconductor layer and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer (S140); Forming a rear electrode on the second surface of the compound semiconductor layer (S150); Attaching a second lamination film on the back electrode (S160); Removing the first lamination film (S170); And forming a front electrode on the first surface of the compound semiconductor layer (S180).
  • a sacrificial layer 120 is formed on one side of a mother substrate 110 serving as a base for providing an appropriate lattice structure in which a light absorbing layer PV is formed (S110).
  • a compound semiconductor layer CS is formed on the sacrificial layer 120.
  • the compound semiconductor layer CS sequentially forms the back contact layer 50, the light absorbing layer PV, the window layer 10, and the front contact layer 30 on the sacrificial layer 120 using the regular growth method. It can form by laminating
  • the first lamination film 130 is attached onto the compound semiconductor layer CS (S130).
  • the first lamination film 130 may be formed of a base film 130B serving as a support substrate and an adhesive 130A positioned on one side of the base film 130B.
  • the base film 130B may be formed of polyethylene terephthalate, polyvinyl chloride, ethylene vinyl acetate, or the like, or a polyolefin-based resin or a copolymer thereof, and may have a thickness of 2 to 200 ⁇ m.
  • the base film 130B since the first lamination film 130 is directly adhered to the first surface of the compound semiconductor layer CS, the base film 130B must support the compound semiconductor layer CS.
  • the base film 130B of the first lamination film 130 used in the manufacturing method of the present embodiment is preferably formed to a thickness of 150 to 200 ⁇ m to effectively support the compound semiconductor layer (CS).
  • the pressure-sensitive adhesive for adhering the base film 130B to the first surface of the compound semiconductor layer CS may include an acrylic resin as a composition, and in addition to the acrylic resin, a heat curing agent, a light curing agent, a foaming agent formed of microspheres, and the like may be selected. It may further include as.
  • acrylic resin silicone acrylate, polyether acrylate or polyester acrylate may be used.
  • the pressure-sensitive adhesive may be formed of a silicone acrylate, polyether acrylate or polyester acrylate-based resin.
  • the pressure-sensitive adhesive may be formed by mixing an acrylic resin (silicone acrylate, polyether acrylate or polyester acrylate) with a thermosetting agent (isocyanate-based crosslinking agent or methylol-based crosslinking agent). It may be formed by mixing a blowing agent formed of microspheres that are foamed by heating. At this time, it is preferable to form solid content in the composition which forms an adhesive so that it may become 10 to 60 weight% with respect to the total weight of the said adhesive.
  • the pressure-sensitive adhesive is one of an acrylic resin (silicone acrylate, polyether acrylate or polyester acrylate) and a light curing agent (benzoin ether, amine, diazonium salt, iodonium salt, sulfonium salt or metal nocene compound). Or a mixture of two or more materials) and a blowing agent formed of microspheres foamed by light.
  • an acrylic resin silicone acrylate, polyether acrylate or polyester acrylate
  • a light curing agent benzoin ether, amine, diazonium salt, iodonium salt, sulfonium salt or metal nocene compound.
  • a blowing agent formed of microspheres foamed by light.
  • the pressure-sensitive adhesive includes a foaming agent that is foamed by heat or light
  • the foaming agent is foamed to lower the adhesive force, thereby easily peeling off the base film 130B.
  • the first lamination film 130 is composed of a base film 130B and an adhesive applied to one side of the film.
  • the first lamination film is a pressure-sensitive adhesive on the first surface of the compound semiconductor layer.
  • the composition of the base film may be formed by applying a composition such as spin coating, bar coating or screen printing onto the pressure-sensitive adhesive.
  • the sacrificial layer 120 is removed by performing an ELO process (S140).
  • hydrofluoric acid HF
  • etching solution hydrofluoric acid
  • the sacrificial layer 120 is removed by the hydrofluoric acid (HF), and thus the compound semiconductor layer CS and the first lamination film 130 are used. ) May be separated from the mother substrate 110.
  • the first support handle 150 is attached to the rear surface of the first lamination film 130, and the compound semiconductor layer ( A rear electrode 60 is formed on the CS (S150).
  • the rear electrode 60 includes gold (Au), platinum (Pt), titanium (Ti), tungsten (W), silicon (Si), nickel (Ni), magnesium (Mg), palladium (Pd), and copper (Cu) It may be formed as a single film or multiple films containing at least one material selected from, and germanium (Ge).
  • the second lamination film 160 is attached onto the rear electrode 60 (S160).
  • the second lamination film 160 may be formed in the same structure as the first lamination film 130 and may be attached in the same manner as the first lamination film 130.
  • the second lamination film 160 may have a different structure from the first lamination film 130.
  • the first support handle 150 is disposed upward, and then, the first support handle 150 and the first support handle 150 are disposed upward.
  • the lamination film 130 is removed (S170).
  • the first lamination film 130 may be removed by any one of the following four methods.
  • the first lamination film was peeled off after heating at a temperature of 60 to 200 ° C. for 5 seconds to 20 minutes.
  • the pressure-sensitive adhesive of the first lamination film includes an acrylic resin such as silicone acrylate, polyether acrylate or polyester acrylate as a composition.
  • the adhesive force of the adhesive 130A containing an acrylic composition is generally 0.2-5 N / 25mm.
  • the first lamination film may be physically peeled off using a force of 0.2 to 5 N / 25 mm.
  • the pressure-sensitive adhesive (130A) further comprises a foaming agent formed of a microsphere foamed by heating, the foaming agent by heating for 5 seconds to 20 minutes at a temperature of 60 to 200 °C according to the method described in item (2) By foaming, the first lamination film can be peeled off.
  • the pressure-sensitive adhesive (130A) further comprises a foaming agent formed of microspheres foamed by light, the intensity of 20 to 600mJ / cm2 for light having a wavelength of 200 to 400nm according to the method described in item (3)
  • the first lamination film can be peeled off by irradiating with a foaming agent.
  • the acrylic pressure-sensitive adhesive has a physical property that is dissolved in at least one solvent of Acetone (2-propanone), Isopropyl alcohol (Isopropanol), NMP (1-Methyl-2-pyrrolidon), DMSO (dimethyl sulfoxide), the solvent
  • the first lamination film may be peeled off by dissolving the pressure-sensitive adhesive 130A using one of them.
  • the front electrode 20 is formed on the first surface of the compound semiconductor layer CS (S180).
  • the front electrode 20 may be formed by depositing a metal only on a region where the front electrode is to be formed, or by patterning after depositing a front electrode material on the front contact layer 30.
  • the second support handle 170 and the second support pattern 170 are patterned.
  • the lamination film 160 is removed to manufacture the compound semiconductor solar cell shown in FIG. 6.
  • the compound semiconductor solar cell is provided with one light absorbing layer as an example, but a plurality of light absorbing layers may be formed.
  • the lower light absorbing layer may include a GaAs compound that absorbs light in a long wavelength band and photoelectrically converts the upper light absorbing layer may include a GaInP compound that absorbs light in a short wavelength band and photoelectrically converts the upper light absorbing layer.
  • the tunnel junction layer may be positioned between the lower light absorbing layer and the lower light absorbing layer.
  • An intrinsic semiconductor layer may be further formed between the p-type semiconductor layer and the n-type semiconductor layer of the light absorbing layer.
  • the manufacturing method of the present invention largely, forming a sacrificial layer on one side of the mother substrate (S210); Forming a compound semiconductor layer on the sacrificial layer (S220); Forming a first passivation layer formed of a compound semiconductor on the first surface of the compound semiconductor layer (S230); Depositing a second protective layer formed of a metal on the first protective layer (S240); Attaching a first lamination film on the second protective layer (S250); Separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer (S260); Forming a rear electrode on the compound semiconductor layer (S270); Attaching a second lamination film on the back electrode (S280); Removing the first lamination film (S290); Removing the second protective layer (S300); Removing the first protective layer (S310); And forming a front electrode on the compound semiconductor layer (S320).
  • one of the compound semiconductor layers directly contacting the first protective layer is formed of GaAs, and the first protective layer is formed of another compound semiconductor except for the GaAs.
  • the sacrificial layer 120 is formed on one surface of the mother substrate 110 (S210), and the compound semiconductor layer CS is formed on the sacrificial layer 120 (S220).
  • the compound semiconductor layer CS is formed by the regular growth method as in the first embodiment described above.
  • the front contact layer 30 may be formed entirely on the window layer 10, and may be formed of GaAs having excellent electrical conductivity for ohmic contact.
  • a first protective layer 140A formed of a compound semiconductor is formed on the compound semiconductor layer CS (S230), and a second protective layer 140B formed of metal is formed on the first protective layer 140A. (S240). Therefore, the protective layer 140 including the first protective layer 140A and the second protective layer 140B is formed.
  • the first protective layer 140A is formed of any compound semiconductor except GaAs, preferably any one compound semiconductor selected from GaInP, AlInP, and AlGaInP.
  • the compound semiconductor layer CS and the passivation layer 140A are formed of different compound semiconductors, the compound semiconductor layer CS and the passivation layer 140A, It is possible to effectively prevent the peeling of the 140B, and to effectively prevent the etching of a portion of the compound semiconductor layer CS during the process of removing the protective layers 140A and 140B.
  • the sacrificial layer 120 and the compound semiconductor layer CS and the first protective layer 140A may be a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy method, or any other suitable method for forming an epitaxial layer. It can form by a method and can be formed by a regular growth method.
  • MOCVD metal organic chemical vapor deposition
  • a molecular beam epitaxy method or any other suitable method for forming an epitaxial layer. It can form by a method and can be formed by a regular growth method.
  • the second protective layer 140B may be formed of the first metal layer 140B-1 formed of copper having excellent etching resistance, and the first metal layer 140B-1 may be formed of the second metal layer 140B-2 formed of another metal. Can be.
  • the second metal layer 140B-2 may be a metal that can prevent the surface of the first metal layer 140B-1 from being oxidized, or an etching solution used to remove the first metal layer 140B-1. It is preferable to form at least one selected from a material having corrosion resistance, for example, silver (Ag), gold (Au), platinum (Pt), palladium (Pd), nickel (Ni) and molybdenum (Mo). Do.
  • the second metal layer 140B-2 includes the first passivation layer 140A.
  • the first metal layer 140B-1 and between the first metal layer 140B-1 and the first lamination film 130, and the first metal layer 140B-1 may be formed.
  • the second metal layer 140B-2 may be further formed between the two first metal layers 140B-1.
  • an etching process and an ELO process for removing the second metal layer 140B-2 may be performed. Since the first protective layer 140A can be protected during the first protective layer 140A, the first protective layer 140A and the second protective layer 140B, in particular, between the first protective layer 140A and the first metal layer 140B-1. The peeling phenomenon which arises can be prevented.
  • the second metal layer 140B-2 is formed between the first metal layer 140B-1 and the first lamination film 130, the second metal layer 140B-2 is formed on the surface of the first metal layer 140B-1. Since the oxide film can be prevented from being formed, the peeling phenomenon occurring between the first lamination film 130 and the second protective layer 140B can be prevented during the etching process, especially the ELO process.
  • the second protective layer 140B may be formed to a thickness of 1 ⁇ m to 10 ⁇ m, and the thickness of the first metal layer 140B-1 may be used to support the compound semiconductor layer CS during the manufacturing process of the compound semiconductor solar cell. It may be formed to 80% or more of the thickness of the second protective layer (140B).
  • the first lamination film 130 is attached onto the second protective layer 140B (S250).
  • the first lamination film 130 is not directly adhered to the compound semiconductor layer CS, but directly adhered to the protective layer 140 for supporting the compound semiconductor layer CS.
  • the base film of the 1st lamination film 130 used for the manufacturing method of this embodiment with a thin thickness compared with the base film of 1st Example mentioned above.
  • the base film may be formed to a thickness of 100 ⁇ m or less
  • FIG. 4 illustrates a case in which the first lamination film is formed to have a thickness thinner than that of the first lamination film of the first embodiment.
  • the sacrificial layer 120 is removed by performing an ELO process (S260).
  • the first lamination film 130 is the second protective layer. It does not peel off from 140B.
  • FIG. 7 is a photograph showing that peeling between the first lamination film 140 and the second protective layer 130B is suppressed after performing the ELO process according to the manufacturing method of the second embodiment.
  • FIG. 7 shows the interface between the first lamination film and the protective metal layer in the conventional example in which the ELO process is performed in a state in which a single-layered protective metal layer is deposited on the first surface of the compound semiconductor layer and the first lamination film is attached thereto. It is a photograph showing that peeling occurred.
  • the first support handle 150 is attached on the rear surface of the first lamination film 130, and the compound semiconductor layer
  • the back electrode 60 is formed on the CS (S270).
  • the second lamination film 160 is attached to the rear electrode 60 (S280), and the first support handle 150 is attached to the second support handle 170 on the second lamination film 160. Place it face up.
  • first support handle 150 and the first lamination film 130 are removed (S290), and the second protective layer 140B is removed (S300).
  • the first metal layer 140B-1 is removed using an etching solution in which ammonium hydroxide (NH 4 OH) and hydrogen peroxide (H 2 O 2 ) are mixed, and the second metal layer 140B-2 is removed from the first metal layer ( 140B-1) is removed with an etching solution other than the etching solution used for removing 140B-1), for example, an etching solution containing at least one of potassium iodide (KI) and potassium cyanide (H 2 O 2 ).
  • the first metal layer 140B-1 has excellent etching resistance to the etching solution used to remove the second metal layer 140B-2, while the second metal layer 140B-2 is removed.
  • the first metal layer 140B-1 is not removed.
  • the second metal layer 140B-2 is formed between the first metal layer 140B-1 and the first lamination film 130, an oxide film is formed on the surface of the first metal layer 140B-1. Since it is suppressed by the 2 metal layer 140B-2, the peeling phenomenon which arises between the 2nd protective layer 140B and the 1st lamination film 130 during an etching process, especially an ELO process is prevented.
  • the first protective layer 140A is removed (S310).
  • the first passivation layer 140A may be removed using an etching solution including hydrochloric acid (HCL) in which the front contact layer formed of GaAs has etching resistance.
  • HCL hydrochloric acid
  • the front electrode 20 is formed on the first surface of the compound semiconductor layer CS (S320).
  • first and second may be used to describe various components, but the components may not be limited by the terms. The terms may be used only for the purpose of distinguishing one component from another component.
  • the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.
  • the term "and / or” may include a combination of a plurality of related items or any of a plurality of related items.
  • a component When a component is said to be “connected” or “coupled” to another component, it may be directly connected to or coupled to the other component, but other components may be present in the middle. Can be understood.
  • FIG. 1 is a perspective view of a compound semiconductor solar cell
  • FIG. 2 is a cross-sectional view of a support handle according to an embodiment of the present invention
  • FIG. 3 is a process diagram showing a method of manufacturing a compound semiconductor solar cell using the support handle shown in FIG. 2. .
  • the compound semiconductor solar cell includes a light absorbing layer PV, a window layer 10 positioned on the front surface of the light absorbing layer PV, a front electrode 20 positioned on the front surface of the window layer 10, and a window layer ( 10) the front contact layer 30 positioned between the front electrode 20, the antireflection film 40 positioned on the window layer 10, the rear contact layer 50 positioned on the rear surface of the light absorbing layer PV, and
  • the rear electrode 60 may include a rear electrode 60 positioned on the rear surface of the rear contact layer 50.
  • At least one of the anti-reflection film 40, the window layer 10, the front contact layer 30, and the rear contact layer 50 may be omitted, but as shown in FIG. It demonstrates as an example.
  • the light absorbing layer PV may be formed including a III-VI semiconductor compound.
  • a III-VI semiconductor compound For example, GaInP compounds containing gallium (Ga), indium (In) and phosphorus (P) or GaAs compounds containing gallium (Ga) and arsenic (As) may be formed.
  • the light absorbing layer (PV) will be described with an example containing a GaAs compound.
  • the light absorption layer PV is a p-type semiconductor layer PV-p doped with an impurity of a first conductivity type, for example, a p-type impurity, and an n-type semiconductor doped with an impurity of a second conductivity type, for example, an n-type impurity.
  • Layer (PV-n) is a p-type semiconductor layer PV-p doped with an impurity of a first conductivity type, for example, a p-type impurity, and an n-type semiconductor doped with an impurity of a second conductivity type, for example, an n-type impurity.
  • the light absorbing layer PV may further include a rear electric field layer disposed at the rear of the p-type semiconductor layer PV-p.
  • the p-type semiconductor layer PV-p is formed by doping the compound semiconductor described above with a first conductivity type, that is, a p-type impurity, and the n-type semiconductor layer PV-n is formed by the second compound semiconductor in the aforementioned compound semiconductor. That is, n-type impurities may be formed by doping.
  • the p-type impurity may be selected from carbon, magnesium, zinc or a combination thereof
  • the n-type impurity may be selected from silicon, selenium, tellurium or a combination thereof.
  • the n-type semiconductor layer PV-n may be located in an area adjacent to the front electrode 20, and the p-type semiconductor layer PV-p may be disposed directly below the n-type semiconductor layer PV-n. It may be located in an area adjacent to).
  • the distance between the n-type semiconductor layer PV-n and the front electrode 20 is smaller than the distance between the p-type semiconductor layer PV-p and the front electrode, and the n-type semiconductor layer PV-n
  • the spacing between the back electrodes 60 is greater than the spacing between the p-type semiconductor layer PV-p and the back electrodes.
  • a pn junction in which the p-type semiconductor layer PV-p and the n-type semiconductor layer PV-n are bonded to each other is formed in the light absorbing layer PV.
  • the generated electron-hole pair is separated into electrons and holes by the internal potential difference formed by the pn junction of the light absorbing layer PV so that the electrons move toward the n-type and the holes move toward the p-type.
  • holes generated in the light absorbing layer PV move to the back electrode 60 through the back contact layer 50, and electrons generated in the light absorbing layer PV are transferred to the window layer 10 and the front contact layer 30. It moves to the front electrode 20 through).
  • the p-type semiconductor layer PV-p is positioned in the region adjacent to the front electrode 20 and the n-type semiconductor layer PV-n is directly below the p-type semiconductor layer PV-p.
  • the electrons generated in the light absorbing layer (PV) is the back contact layer 50 It moves to the rear electrode 60 through).
  • the rear electric field layer is of the same conductive type as the upper layer in direct contact, that is, the n-type semiconductor layer PV-n or the p-type semiconductor layer PV-p. It may be formed of the same material as the window layer 10.
  • the rear electric field layer is an upper layer in direct contact, that is, an n-type semiconductor layer (PV-n) or in order to effectively block the movement of charges (holes or electrons) to be moved toward the front electrode toward the rear electrode.
  • PV-n n-type semiconductor layer
  • the back surface of the p-type semiconductor layer PV-p is entirely formed.
  • the rear field layer when the rear field layer is formed on the rear side of the p-type semiconductor layer PV-p, the rear field layer serves to block electrons from moving toward the rear electrode.
  • the rear electric field layer is located on the entire rear surface of the p-type semiconductor layer PV-p.
  • the light absorbing layer (PV) of this configuration can be prepared from a mother substrate by a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method or any other suitable method for forming an epitaxial layer. Can be.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the p-type semiconductor layer PV-p and the n-type semiconductor layer PV-n may be made of the same material having the same bandgap (homogeneous junction), and different materials having different bandgaps may be different. It may consist of (heterojunction).
  • the window layer 10 may be formed between the light absorbing layer PV and the front electrode 20, and may be formed by doping a III-VI group semiconductor compound with a second conductivity type, that is, an n-type impurity.
  • the window layer 10 is formed. It may include one conductivity type, that is, p-type impurities.
  • the window layer 10 may not include n-type or p-type impurities.
  • the window layer 10 functions to passivate the front surface of the light absorbing layer PV. Therefore, when the carrier (electrons or holes) move to the surface of the light absorbing layer PV, the window layer 10 can prevent the carrier from recombining at the surface of the light absorbing layer PV.
  • the window layer 10 since the window layer 10 is disposed on the entire surface of the light absorbing layer PV, that is, on the light incident surface, the window layer 10 may be disposed in an amount greater than that of the energy band gap of the light absorbing layer PV so as to hardly absorb light incident on the light absorbing layer PV. It can have a high energy bandgap.
  • the window layer 10 may further contain aluminum (Al).
  • the anti-reflection film 40 may be located on the remaining area of the window layer 10 except for the area where the front electrode 20 and / or the front contact layer 30 is located.
  • the anti-reflection film 40 may be disposed on the front contact layer 30 and the front electrode 20 as well as the exposed window layer 10.
  • the compound semiconductor solar cell may further include a bus bar electrode that physically connects the plurality of front electrodes 20, and the bus bar electrode may be exposed to the outside without being covered by the anti-reflection film 40. .
  • the anti-reflection film 40 may include magnesium fluoride, zinc sulfide, titanium oxide, silicon oxide, derivatives thereof, or a combination thereof.
  • the front electrode 20 may be formed to extend in the first direction X-X ', and the plurality of front electrodes 20 may be spaced apart at regular intervals along the second direction Y-Y' perpendicular to the first direction. .
  • the front electrode 20 having such a configuration may be formed by including an electrically conductive material.
  • the front electrode 20 may include at least one of gold (Au), germanium (Ge), and nickel (Ni).
  • the front contact layer 30 positioned between the window layer 10 and the front electrode 20 is formed by doping the group III-VI semiconductor compound with a second impurity at a doping concentration higher than the impurity doping concentration of the window layer 10. can do.
  • the front contact layer 30 forms an ohmic contact between the window layer 10 and the front electrode 20. That is, when the front electrode 20 directly contacts the window layer 10, the ohmic contact between the front electrode 20 and the light absorbing layer PV may not be well formed due to the low impurity doping concentration of the window layer 10. Do not. Therefore, the carrier moved to the window layer 10 may disappear easily without moving to the front electrode 20.
  • the carrier is smoothly moved by the front contact layer 30 forming the ohmic contact with the front electrode 20.
  • the short-circuit current density (Jsc) of the compound semiconductor solar cell increases. Accordingly, the efficiency of the solar cell can be further improved.
  • the doping concentration of the second impurity doped in the front contact layer 30 may be higher than the doping concentration of the second impurity doped in the window layer 10.
  • the front contact layer 30 may be formed in the same shape as the front electrode 20.
  • the rear contact layer 50 located on the rear of the rear electric field layer may be a light absorbing layer ( PV) or the backside of the backside electric field layer as a whole, and may be formed by doping the III-VI semiconductor compound with a higher doping concentration than the p-type semiconductor layer (PV-p).
  • the back contact layer 50 may form an ohmic contact with the back electrode 160, thereby further improving the short circuit current density Jsc of the compound semiconductor solar cell. Accordingly, the efficiency of the solar cell can be further improved.
  • the thickness of the front contact layer 30 and the thickness of the back contact layer 50 may be formed to a thickness of 100nm to 300nm, respectively.
  • the front contact layer 30 is formed to a thickness of 100nm and the back contact layer ( 50) may be formed to a thickness of 300 nm.
  • the rear electrode 60 positioned on the rear surface of the rear contact layer 50 may be formed of a sheet-shaped conductor positioned entirely on the rear surface of the rear contact layer 50. . That is, the rear electrode 60 may also be referred to as a sheet electrode positioned on the entire rear surface of the rear contact layer 50.
  • the rear electrode 60 may be formed in the same plane as the light absorbing layer PV, and may include gold (Au), platinum (Pt), titanium (Ti), tungsten (W), silicon (Si), and nickel (Ni). ), Magnesium (Mg), palladium (Pd), copper (Cu), and germanium (Ge) may be formed as a single film or a multi-layer including at least one material selected from, and the material forming the rear electrode is It may be appropriately selected depending on the conductivity type of the contact layer.
  • the back electrode 60 is made of gold (Au), platinum (Pt) / titanium (Ti), tungsten-silicon alloy (WSi), and silicon (Si) / It may be formed of any one selected from nickel (Ni) / magnesium (Mg) / nickel (Ni), and preferably, may be formed of gold (Au) having low contact resistance with a p-type back contact layer.
  • the back electrode 60 may include palladium (Pd) / gold (Au), copper (Cu) / germanium (Ge), and nickel (Ni) / germanium- It may be formed of any one selected from alloys of gold (GeAu) / nickel (Ni) and gold (Au) / titanium (Ti), and preferably palladium (Pd) / with low contact resistance with a p-type back contact layer. It may be formed of gold (Au).
  • the material forming the back electrode may be appropriately selected from the above materials, and particularly, may be appropriately selected from materials having low contact resistance with the back contact layer.
  • the compound semiconductor solar cell is provided with one light absorbing layer as an example, but a plurality of light absorbing layers may be formed.
  • the lower light absorbing layer (light absorbing layer of the middle cell and / or the bottom cell) may include a GaAs compound that absorbs light of the long wavelength band and photoelectrically converts the light absorbing layer (light absorbing layer of the top cell). It may include a GaInP compound that absorbs light of the photoelectric conversion, the tunnel junction layer may be located between the upper light absorbing layer and the lower light absorbing layer.
  • An intrinsic semiconductor layer may be further formed between the p-type semiconductor layer and the n-type semiconductor layer of the light absorbing layer.
  • a method of manufacturing a compound semiconductor solar cell is largely provided by forming a sacrificial layer on one side of a mother substrate, forming a compound semiconductor layer on the sacrificial layer, and attaching an epitaxial lift off (ELO) film on the compound compound semiconductor layer.
  • the method may include performing an ELO process, attaching a support handle to the ELO film, and separating the compound semiconductor layer from the mother substrate using the support handle.
  • a sacrificial layer (1) on one side of a mother substrate ie, a GaAs wafer or a Ge wafer serving as a base for providing a suitable lattice structure in which a light absorbing layer (PV) is formed is described.
  • a mother substrate ie, a GaAs wafer or a Ge wafer
  • PV light absorbing layer
  • the compound semiconductor layer CS may include a back contact layer 50, a light absorbing layer PV, a window layer 10, and a front contact layer 30.
  • the front contact layer 30 may be formed entirely on the window layer 10, and may be formed of GaAs having excellent electrical conductivity for ohmic contact. have.
  • the ELO film 130 supports the compound semiconductor layer CS and the compound semiconductor layer CS when the sacrificial layer 120 is removed using hydrofluoric acid (HF) in the ELO process.
  • HF hydrofluoric acid
  • the compound semiconductor layer CS is formed using an inverse growth method
  • a front electrode is formed on one side (lower surface in FIG. 4) of the compound semiconductor layer CS
  • the compound semiconductor solar cell shown in FIG. 1 can be manufactured by forming a back electrode on the other side (upper surface in FIG. 4) of the compound semiconductor layer CS.
  • the inverse growth method is a method of laminating in order from a layer (for example, a front contact layer) located on the front electrode side to a layer (for example, a back contact layer) located on the rear electrode side.
  • the compound semiconductor layer CS is formed using the regular growth method, after the ELO process is performed, a rear electrode is formed on one side (lower surface in FIG. 4) of the compound semiconductor layer CS.
  • the compound semiconductor solar cell shown in FIG. 1 can be manufactured by forming and forming a front electrode on the other surface (upper surface in FIG. 4) of the compound semiconductor layer CS.
  • the regular growth method refers to a method of laminating in order from a layer (for example, a rear contact layer) located on the rear electrode side to a layer (for example, a front contact layer) located on the front electrode side.
  • the support handle 200 of the present embodiment is bonded to the flexible substrate 210 by the flexible substrate 210, the adhesive layer 220 positioned on one side of the flexible substrate 210, and the adhesive layer 220. It may include a foam type self-adhesive film 230 having a self-adhesive surface 230A on a surface opposite to the surface adhered to the adhesive layer 220.
  • a plurality of pores 230A-1 are formed on the self-adhesive surface 230A of the self-adhesive film, and a separate pressure-sensitive adhesive for adhesion with the ELO film 220 is not applied.
  • the plurality of pores 230A-1 formed on the self-adhesive surface 230A may be formed to have a non-uniform size as shown in FIG. 3, and may be distributed non-uniformly.
  • a plurality of pores may be further formed in the self-adhesive film 230, and the plurality of pores formed in the self-adhesive film 230 may be formed in a non-uniform size, and are distributed unevenly. Can be.
  • the cross section of the self-adhesive film may have the same cross section as shown in FIG. 3.
  • Foam-type self-adhesive film 230 may be formed of any one material selected from acrylic (acrylic), polyurethane (polyurethane), polyethylene (polyethylene).
  • the self-adhesive film 230 having such a configuration has a self-adhesive surface 230A when the support handle 200 is adhered to the ELO film 130 with the self-adhesive surface 230A facing the ELO film 130. Bubbles between the ELO film 130 and the ELO film 130 are trapped in the plurality of pores 230A-1 formed on the self-adhesive surface 230A, and thus, due to the air bubbles between the ELO film 130 and the self-adhesive film 230. The adhesive force between the support handle 200 and the ELO film 130 may be suppressed from being lowered, and the adhesion state between the support handle 200 and the ELO film 130 may be maintained firmly.
  • the self-adhesive film 230 firmly adhered to the ELO film 130 is a thermal expansion of air trapped in the pores 230A-1 of the self-adhesive surface 230A under a constant temperature condition (30 ° C. to 60 ° C.). Due to this, it can be easily peeled from the ELO film.
  • the reason for limiting the temperature condition to 30 ° C to 60 ° C is that thermal expansion of air is not well performed at a temperature of less than 30 ° C, so that the self-adhesive film 230 and the ELO film 130 are not effectively peeled off. This is because thermal damage may be applied to the compound semiconductor layer at a temperature of 60 ° C or higher.
  • the self-adhesive film 230 is preferably peeled from the ELO film 220 at a temperature of 30 °C to 60 °C.
  • the flexible substrate 210 may be formed of any one material selected from glass, polypropylene, polyethylene, polycarbonate, and polyurethane, and has a thickness of 100 ⁇ m or more. It may be formed of (T1), and may have acid resistance and solvent resistance.
  • the flexible substrate 210 and the mother substrate 110 may be in a vacuum fixed state by a chuck, respectively.
  • the support handle 200 may be attached to the ELO film 220 while the self-adhesive surface 230A faces the ELO film 220.
  • the support handle 200 may be lined with the ELO film 130 by a roll method.
  • the foam type self-adhesive film 230 is separated from the ELO film 220 at a temperature of 30 ° C. to 60 ° C., and the foam type self adhesive film 230 is included.
  • the support handle 200 is reused after cleaning the self-adhesive surface (230A).
  • FIG. 5 is a photograph comparing a conventional embodiment using a general adhesive tape with an embodiment of the present invention using a foam type self-adhesive tape. It can be seen that poor adhesion occurs, and lifting and wrinkles occur in some areas.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

La présente invention concerne une poignée de support et un procédé de fabrication d'une batterie solaire à semi-conducteur composé l'utilisant. Une poignée de support selon un aspect de la présente invention peut comprendre : un substrat souple ; une couche adhésive située sur une surface du substrat souple ; et un film autoadhésif de type mousse adhérant au substrat souple par la couche adhésive, et ayant une surface auto-adhésive opposée à la surface du film adhérant à la couche adhésive.
PCT/KR2019/000300 2018-08-21 2019-01-08 Poignée de support et procédé de fabrication d'une batterie solaire à semi-conducteur composé l'utilisant Ceased WO2020040370A1 (fr)

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KR1020180097554A KR20200021775A (ko) 2018-08-21 2018-08-21 지지 핸들 및 이를 이용한 화합물 반도체 태양전지의 제조 방법
KR10-2018-0097554 2018-08-21

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Citations (5)

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JP2012054388A (ja) * 2010-09-01 2012-03-15 Sharp Corp 薄膜化合物太陽電池の製造方法
KR20120103762A (ko) * 2009-09-10 2012-09-19 더 리젠츠 오브 더 유니버시티 오브 미시간 에피택셜 리프트오프를 이용한 플렉시블 광기전 디바이스의 제조 방법 및 에피택셜 성장에 사용되는 성장 기판의 무결성의 보존 방법
KR20130007435A (ko) * 2011-06-23 2013-01-18 소이텍 임시 접합을 채용하는 반도체 구조를 제조하기 위한 방법
KR101653156B1 (ko) * 2015-04-22 2016-09-01 국방과학연구소 잔류응력이 있는 다중접합 박막을 이용한 곡면형 태양전지 패널 및 그 제작방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110015031A (ko) * 2008-05-30 2011-02-14 알타 디바이씨즈, 인크. 에피텍셜 리프트 오프 적층 및 방법
KR20120103762A (ko) * 2009-09-10 2012-09-19 더 리젠츠 오브 더 유니버시티 오브 미시간 에피택셜 리프트오프를 이용한 플렉시블 광기전 디바이스의 제조 방법 및 에피택셜 성장에 사용되는 성장 기판의 무결성의 보존 방법
JP2012054388A (ja) * 2010-09-01 2012-03-15 Sharp Corp 薄膜化合物太陽電池の製造方法
KR20130007435A (ko) * 2011-06-23 2013-01-18 소이텍 임시 접합을 채용하는 반도체 구조를 제조하기 위한 방법
KR101653156B1 (ko) * 2015-04-22 2016-09-01 국방과학연구소 잔류응력이 있는 다중접합 박막을 이용한 곡면형 태양전지 패널 및 그 제작방법

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