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WO2019224098A1 - Injector made of silicon for the semiconductor industry - Google Patents

Injector made of silicon for the semiconductor industry Download PDF

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Publication number
WO2019224098A1
WO2019224098A1 PCT/EP2019/062618 EP2019062618W WO2019224098A1 WO 2019224098 A1 WO2019224098 A1 WO 2019224098A1 EP 2019062618 W EP2019062618 W EP 2019062618W WO 2019224098 A1 WO2019224098 A1 WO 2019224098A1
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WO
WIPO (PCT)
Prior art keywords
injector
channel
injector according
tube
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2019/062618
Other languages
German (de)
French (fr)
Inventor
Walter Nadrag
Enrico Nadrag
Markus Binder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SICO TECHNOLOGY GmbH
Original Assignee
SICO TECHNOLOGY GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SICO TECHNOLOGY GmbH filed Critical SICO TECHNOLOGY GmbH
Priority to DE112019002606.2T priority Critical patent/DE112019002606A5/en
Publication of WO2019224098A1 publication Critical patent/WO2019224098A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Definitions

  • the invention relates to an injector having the features of the introductory part of claim 1.
  • wafers When manufacturing wafers, wafers are placed in brackets (boats) and placed in treatment rooms (ovens) where they are treated with gas.
  • the gas that will be treated with the wafer is placed in the oven via an injector, which is normally a curved one
  • Process gases used to treat wafers are, for example: a silane, for example
  • FIG. 11 of US 2006/0185589 A1 shows that the free end of the tube is closed and that outlet openings are provided in the tube.
  • the injector is composed of half-shells, which is the case with the
  • the device described comprises a hollow component, which with an injector communicating with an input port and a reaction chamber containing the substrate communicates.
  • Material can consist of the components of the device for the CVD method.
  • FIGS. 4 and 5 of US 2008/0286981 A1 injectors are provided in the process chamber through which gas is introduced. Materials from which the injectors may consist are not disclosed.
  • FIG. 8 of US 2008/0286981 A1 shows that injectors may have an oblong-oval cross-section.
  • FIG. 7 also shows that the injectors can have lateral outlet openings. Such outlet openings are also shown in FIG. 8.
  • US 2008/0286981 A1 contains no information on which material the injectors can be made.
  • EP 0 582 444 A1 relates to a device for the CVD method, with which SiC is produced with high purity.
  • the device comprises three injector tubes, the construction of which is shown in FIG. It can be seen from EP 0 582 444 A1 that three concentric tubes defining annular channels are contained in the injector tubes. Only the middle channel is used for supplying gas into a chamber. The outer channels serve to circulate cooling medium. Also, EP 0 582 444 A1 contains no information about the material from which the injectors can be made.
  • Silicon vapor deposition comprising a tube and a nozzle.
  • silicon is mentioned.
  • the tube of the injector has no Outlets on. Outlet openings are provided exclusively in the nozzle.
  • the nozzle is a separate component from the pipe, which is attached to the end of the pipe.
  • EP 2 407 577 A2 shows a gas feed which has two gas lines for different gases in a cooling tube.
  • US 2008/0035055 A1 shows in FIGS. 2 and 3 an injector with a rectangular cross section and gas outlet openings.
  • the invention has for its object to provide an injector available that does not cause the problems described.
  • injectors according to the invention are the subject of the dependent claims.
  • Cross-sectional area deviates from the cross-sectional area in another region of the channel in the injector, so that arise in the injector in which deposits preferred as
  • Coating can grow and chipping the
  • An inventive injector consists in particular of
  • Silicon carbide has a thermal expansion factor of 4.8 K _1 and quartz a 0.5 K _1 , so these materials are less suitable for injectors.
  • the injector according to the invention can be one or more pieces
  • Injectors are possible. Examples include: A mechanical connection, a connection via coupling sleeves or high temperature bonding.
  • the shape of the inner cross sections of the injector-forming tube and the shape of the outlet openings of the injector are designed, in particular optimized, to influence the speed of the gas flowing through the injector, in particular to reduce or by certain embodiments of the invention
  • Inner surfaces of the flow channel provided in the injector to provide at least a region where deposits can grow.
  • Shapes of the channel in the tube forming the injector which have the effect of a cyclone separator and deposit particles from the gas stream, are also contemplated within the scope of the invention.
  • a funnel-shaped extension 3 of the channel is formed 2, through which the gas flows, the speed at which the gas flows at the end 4 of the injector 1 is reduced, so that at most particle-related deposits on the
  • the extension 3 may be cone, funnel or parabola funnel-shaped.
  • the end of the channel 2 is formed with steps 6, so that a step-shaped widening portion 3 of the channel 2 (increase in the cross-sectional area of the channel 2) results.
  • the edges of the steps 6 form traps for the possibly formed particles and, moreover, are growth sites for deposits.
  • an extension 7 extending to the end 4 of the injector 1 is provided, which is substantially spherical in the exemplary embodiment shown in FIG.
  • the extension 7 may also be cylindrical and provided at a distance from the end 4 of the injector 1.
  • Fig. 4 shows a variant of the injector 1 of Fig. 3 with a plurality, in the example three, spherical Verwirbelungshuntn in the form of extensions 7, wherein here also cylindrical extensions 7 as Verwirbelungshuntn, as mentioned in Fig. 3 may be provided.
  • Cross-sectional area of the channel 2 is provided, which is formed by an annular projection 9, which projects from the wall of the channel 2 inwardly.
  • the annular projection 8, as shown in Fig. 5, have a rounded cross-sectional shape, but can also be edged.
  • annular grooves 10 are provided. In the embodiment shown in FIG. 6, the depth of the grooves 10 increases towards the end 4 of the tube of the injector 1. But also considered is an embodiment in which the depth of all or individual grooves 10 is equal. These grooves 10 form cylindrical (disk-shaped) chambers in which accumulate any particles formed and where deposits can grow, so that particles with the gas from the injector 1 is not or only
  • Cross-sectional extensions 11 are provided, which act as traps for particles and ensure that deposits can deposit and accumulate there.
  • the cross-sectional widenings 11 are formed so that their downstream (flow direction of the gas arrow 12) lying end forms a direction of flow directed counterpart nose 13.
  • the exit openings 20 may be holes in silicon plates (FIG. 8), slots in silicon plates (FIG. 9), or grid-forming holes in the silicon plate (FIG. 10).
  • FIG. 11 shows an end view of an injector 1 with a plurality of outlet openings 20 arranged in a circle.
  • Fig. 12 shows an injector 1 with an annular
  • Outlet channel 21 In Fig. 13, an embodiment of an injector 1 according to the invention is shown, which has a plurality of outlet channels 22, wherein in the channel 2 baffles 23 and Verwirbelungswort 24 are provided.
  • an injector 1 is shown with a channel 2 having a cyclone-like cavity 25, so that in the region of the cyclone-like cavity 25 particles are deposited, and not emerge from the injector 1 forming a tube.
  • An injector 1 which is used in the manufacture of semiconductor devices for introducing process gas into chambers, consists of silicon and has a channel 2, the at least one extended region 3, 7, 10, 11, 24, 25 or a constriction in the form of a ring-shaped rib 8, so that in the process gas-containing particles by splintering of the
  • Walls of the channel 2 have formed deposits are deposited from the process gas and in the injector 1,

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)

Abstract

An injector (1), which is used in the production of semiconductor components for introducing process gas into chambers, consists of silicon and has a channel (2), which comprises at least one widened region (3, 7, 10, 11, 24, 25) or a constriction in the form of an annular rib (8), and so particles contained in the process gas that have been formed by the flaking off of deposits that have formed on the walls of the channel (2) are separated from the process gas and are kept back in the injector (1), in particular by growing on the inner surface of the channel (2), and do not escape from the injector (1).

Description

INJEKTOR AUS SILIZIUM FÜR DIE HALBLEITERINDUSTRIE  SILICON INJECTOR FOR THE SEMICONDUCTOR INDUSTRY

Die Erfindung betrifft einen Injektor mit den Merkmalen des einleitenden Teils von Anspruch 1. The invention relates to an injector having the features of the introductory part of claim 1.

Beim Herstellen von Wafern werden Wafer in Halterungen (Boote) eingesetzt und in Behandlungsräume (Öfen) eingebracht, in denen sie mit Gas behandelt werden. When manufacturing wafers, wafers are placed in brackets (boats) and placed in treatment rooms (ovens) where they are treated with gas.

Das Gas, mit dem Wafer behandelt werden, wird in den Ofen über einen Injektor, der im Normalfall ein gebogenes oder The gas that will be treated with the wafer is placed in the oven via an injector, which is normally a curved one

gewinkeltes, mit Löchern versehenes Rohr aus Quarzglas ist, eingebracht . Angled, perforated tube made of quartz glass is introduced.

Gase („Prozessgase"), die zum Behandeln von Wafern verwendet werden, sind beispielsweise: ein Silan, beispielsweise Gases ("process gases") used to treat wafers are, for example: a silane, for example

Trichlorsilan, Siliziumtetrachlorid (SZCI4) , Sauerstoff (O2) , Wasserstoffperoxid (H2O2) oder Tetraethylorthosilikat (Si04C8H2o) · Trichlorosilane, silicon tetrachloride (SZCI4), oxygen (O2), hydrogen peroxide (H2O2) or tetraethylorthosilicate (Si0 4 C 8 H 2 o) ·

US 2006/0185589 Al beschreibt einen Injektor aus Silizium für Gas, der beim thermischen Behandeln von Halbleiterwafern US 2006/0185589 A1 describes an injector of silicon for gas used in the thermal treatment of semiconductor wafers

eingesetzt werden kann. Den Zeichnungen, beispielsweise Fig. 2 von US 2006/0185589 Al, ist zu entnehmen, dass der Injektor eine im Querschnitt kreisrunde Bohrung aufweist und aus Halbschalen gebildet ist. Die Außenform des Rohres ist beispielsweise rechteckig. Fig. 11 von US 2006/0185589 Al ist zu entnehmen, dass das freie Ende des Rohres verschlossen ist und dass im Rohr Austrittsöffnungen vorgesehen sind. Bei US 2006/0185589 Al ist der Injektor aus Halbschalen zusammengesetzt, was bei den can be used. The drawings, for example Fig. 2 of US 2006/0185589 Al, it can be seen that the injector has a circular cross-section bore and is formed from half shells. The outer shape of the tube is rectangular, for example. FIG. 11 of US 2006/0185589 A1 shows that the free end of the tube is closed and that outlet openings are provided in the tube. In US 2006/0185589 A1, the injector is composed of half-shells, which is the case with the

Bedingungen, unter denen gattungsgemäße Injektoren eingesetzt werden, problematisch ist. Conditions under which generic injectors are used, is problematic.

US 5,943,471 A befasst sich vornehmlich mit dem Verdampfen von Feststoffen für ein CVD-Verfahren . Die in US 5,943,471 A US 5,943,471 A deals primarily with the evaporation of solids for a CVD process. The in US 5,943,471 A

beschriebene Vorrichtung umfasst einen hohlen Bauteil, der mit einem Injektor verbunden ist, der mit einer Eingangsöffnung und einer Reaktionskammer, die das Substrat enthält, kommuniziert.The device described comprises a hollow component, which with an injector communicating with an input port and a reaction chamber containing the substrate communicates.

In US 5,943,471 A finden sich keine Angaben, aus welchem In US 5,943,471 A there is no information from which

Werkstoff die Bestandteile der Vorrichtung für das CVD-Verfahren bestehen können. Material can consist of the components of the device for the CVD method.

US 2008/0286981 Al befasst sich mit einem Verfahren zum US 2008/0286981 A1 deals with a method for

Behandeln von Halbleiterwafern in einer Prozesskammer, wobei auf den Wafer in situ Titannitrid und Silizium abgeschieden wird. Hierzu sind bei den in den Fig. 4 und 5 von US 2008/0286981 Al gezeigten Ausführungsformen in der Prozesskammer Injektoren vorgesehen, durch die Gas eingeleitet wird. Werkstoffe, aus welchen die Injektoren bestehen können, sind nicht geoffenbart. Fig. 8 von US 2008/0286981 Al zeigt, dass Injektoren einen länglich-ovalen Querschnitt aufweisen können. In Fig. 7 ist auch gezeigt, dass die Injektoren seitliche Austrittsöffnungen aufweisen können. Solche Austrittsöffnungen sind auch in Fig. 8 gezeigt. US 2008/0286981 Al enthält keine Angaben, aus welchem Werkstoff die Injektoren gefertigt sein können. Treating semiconductor wafers in a process chamber, wherein on the wafer in situ titanium nitride and silicon is deposited. For this purpose, in the embodiments shown in FIGS. 4 and 5 of US 2008/0286981 A1 injectors are provided in the process chamber through which gas is introduced. Materials from which the injectors may consist are not disclosed. FIG. 8 of US 2008/0286981 A1 shows that injectors may have an oblong-oval cross-section. FIG. 7 also shows that the injectors can have lateral outlet openings. Such outlet openings are also shown in FIG. 8. US 2008/0286981 A1 contains no information on which material the injectors can be made.

EP 0 582 444 Al betrifft eine Vorrichtung für das CVD-Verfahren, mit der SiC mit hoher Reinheit hergestellt wird. Die Vorrichtung umfasst drei Injektorrohre, deren Konstruktion in Fig. 3 gezeigt ist. Fig. 3 von EP 0 582 444 Al ist zu entnehmen, dass in den Injektorrohren drei konzentrische Rohre enthalten sind, die ringförmige Kanäle definieren. Ausschließlich der mittlere Kanal wird für das Zuführen von Gas in eine Kammer verwendet. Die äußeren Kanäle dienen für das Zirkulieren von Kühlmedium. Auch EP 0 582 444 Al enthält keine Angaben über den Werkstoff, aus dem die Injektoren hergestellt sein können. EP 0 582 444 A1 relates to a device for the CVD method, with which SiC is produced with high purity. The device comprises three injector tubes, the construction of which is shown in FIG. It can be seen from EP 0 582 444 A1 that three concentric tubes defining annular channels are contained in the injector tubes. Only the middle channel is used for supplying gas into a chamber. The outer channels serve to circulate cooling medium. Also, EP 0 582 444 A1 contains no information about the material from which the injectors can be made.

US 2011/0274926 Al zeigt in Fig. 8 einen Injektor für die US 2011/0274926 A1 shows in FIG. 8 an injector for the

Silizium-Abscheidung aus der Gasphase (vapor deposition) , der ein Rohr und eine Düse umfasst. Als Werkstoff für den Injektor ist u.a. Silizium erwähnt. Das Rohr des Injektors weist keine Austrittsöffnungen auf. Austrittsöffnungen sind ausschließlich in der Düse vorgesehen. Die Düse ist ein vom Rohr getrennter Bauteil, der am Ende des Rohres angebracht ist. Silicon vapor deposition comprising a tube and a nozzle. As a material for the injector, inter alia, silicon is mentioned. The tube of the injector has no Outlets on. Outlet openings are provided exclusively in the nozzle. The nozzle is a separate component from the pipe, which is attached to the end of the pipe.

In EP 2 407 577 A2 ist eine Gaszuführung gezeigt, die in einem Kühlrohr zwei Gasleitungen für unterschiedliche Gase aufweist. EP 2 407 577 A2 shows a gas feed which has two gas lines for different gases in a cooling tube.

US 2008/0035055 Al zeigt in Fig. 2 und 3 einen Injektor mit rechteckigem Querschnitt und Gasaustrittsöffnungen. US 2008/0035055 A1 shows in FIGS. 2 and 3 an injector with a rectangular cross section and gas outlet openings.

Es kann beim Behandeln von Wafern mit einem Prozessgas It can be used when treating wafers with a process gas

Vorkommen, dass wegen Reaktionen des Prozessgases oder wegen Reaktionen im Prozessgas, die auftreten können, während dieses durch den Injektor strömt, an der Wand des Kanals im Injektor Ablagerungen entstehen. Solche Ablagerungen können das Occurrences that due to reactions of the process gas or because of reactions in the process gas, which can occur as it flows through the injector, deposits are formed on the wall of the channel in the injector. Such deposits can do that

erfolgreiche Behandeln von Wafern beeinträchtigen, wenn die Ablagerungen aus dem Injektor austreten und in den successful wafers will degrade as the debris exits the injector and into the

Behandlungsraum gelangen. Get treatment room.

Problematisch bei den bekannten Injektoren aus Quarzglas ist es, dass Ablagerungen, die während des Behandlungsprozesses auf dem Injektor (aus Quarzglas) entstehen, aufgrund thermischer The problem with the known injectors made of quartz glass is that deposits that occur during the treatment process on the injector (made of quartz glass) due to thermal

Spannungen absplittern und das ordnungsgemäße Herstellen von Wafern beeinträchtigen können. Splintering stresses and can interfere with the proper production of wafers.

Es entstehen durch das Absplittern nämlich Partikel (flakings) , die in Prozessen der Halbleiterindustrie nicht erwünscht sind. This is caused by the splintering namely particles (flakings), which are not desirable in processes of the semiconductor industry.

Der Erfindung liegt die Aufgabe zugrunde, einen Injektor zur Verfügung zu stellen, der die geschilderten Probleme nicht verursacht . The invention has for its object to provide an injector available that does not cause the problems described.

Gelöst wird diese Aufgabe erfindungsgemäß mit einem Injektor, der die Merkmale von Anspruch 1 aufweist. Bevorzugte und vorteilhafte Ausgestaltungen des This object is achieved according to the invention with an injector having the features of claim 1. Preferred and advantageous embodiments of

erfindungsgemäßen Injektors sind Gegenstand der Unteransprüche. injectors according to the invention are the subject of the dependent claims.

Dank der erfindungsgemäßen Ausbildung eines Injektors ergibt sich kein oder ein wenigstens verminderter Austritt von Thanks to the inventive design of an injector results in no or at least a reduced outlet of

Partikeln aus dem Injektor. Particles from the injector.

Grund hierfür ist die erfindungsgemäß vorgesehene Maßnahme, im Kanal des Injektors Bereiche vorzusehen, deren The reason for this is the provision provided according to the invention for providing areas in the channel of the injector

Querschnittsfläche von der Querschnittsfläche in einem anderen Bereich des Kanals im Injektor abweicht, so dass sich Stellen im Injektor ergeben, in denen Ablagerungen bevorzugt als  Cross-sectional area deviates from the cross-sectional area in another region of the channel in the injector, so that arise in the injector in which deposits preferred as

Beschichtung anwachsen können und Absplitterungen der Coating can grow and chipping the

Ablagerungen wenigstens weitgehend vermieden ist. Deposits are at least largely avoided.

Ein erfindungsgemäßer Injektor besteht insbesondere aus An inventive injector consists in particular of

Silizium, das denselben thermischen Ausdehnungsfaktor Silicon, the same thermal expansion factor

(Ausdehnungskoeffizient) besitzt wie die entstehende (Expansion coefficient) has as the resulting

Beschichtung, nämlich 2,6 K_1. Dagegen hat Siliziumkarbid einen thermischen Ausdehnungsfaktor von 4,8 K_1 und Quarz einen solchen von 0,5 K_1, so dass diese Werkstoffe für Injektoren weniger geeignet sind. Coating, namely 2.6 K _1 . Silicon carbide, on the other hand, has a thermal expansion factor of 4.8 K _1 and quartz a 0.5 K _1 , so these materials are less suitable for injectors.

Der erfindungsgemäße Injektor kann ein- oder mehrstückig The injector according to the invention can be one or more pieces

ausgebildet sein, wobei bei einer mehrstückigen Ausgestaltung verschiedene Verbindungsarten der Teile (Rohrstücke) des be formed, wherein in a multi-piece design different types of connection of the parts (pipe sections) of the

Injektors möglich sind. Beispielhaft werden genannt: Eine mechanische Verbindung, eine Verbindung über Verbindungsmuffen oder Hochtemperaturverklebungen. Injectors are possible. Examples include: A mechanical connection, a connection via coupling sleeves or high temperature bonding.

Bei dem erfindungsgemäßen Injektor sind die Form der inneren Querschnitte des den Injektor bildenden Rohres und die Form der Auslassöffnungen des Injektors so ausgebildet, insbesondere darauf optimiert, die Geschwindigkeit des durch den Injektor strömenden Gases zu beeinflussen, insbesondere zu verringern, oder durch bestimmte erfindungsgemäße Ausgestaltungen der In the injector according to the invention, the shape of the inner cross sections of the injector-forming tube and the shape of the outlet openings of the injector are designed, in particular optimized, to influence the speed of the gas flowing through the injector, in particular to reduce or by certain embodiments of the invention

Innenflächen des in dem Injektor vorgesehenen Strömungskanals wenigstens einen Bereich zu schaffen, wo Ablagerungen anwachsen kann . Inner surfaces of the flow channel provided in the injector to provide at least a region where deposits can grow.

In einer Ausführungsform des erfindungsgemäßen Injektors ist darauf Bedacht genommen, dass allenfalls entstandene Partikel in Aussparungen in der Wand des Kanals oder durch eine besondere Formgebung des Kanals in dem den Injektor bildenden Rohr In one embodiment of the injector according to the invention care is taken that any particles formed in recesses in the wall of the channel or by a special shape of the channel in the injector forming tube

zurückgehalten werden. be withheld.

Bei Ausführungsformen des erfindungsgemäßen Injektors können Formgebungen vorgesehen sein, die im durch den Kanal im Injektor strömenden Gas gezielt Verwirbelungen erzeugen. In embodiments of the injector according to the invention, it is possible to provide shapes which specifically generate turbulences in the gas flowing through the channel in the injector.

Im Rahmen der Erfindung sind auch Formgebungen des Kanals in dem den Injektor bildenden Rohr in Betracht gezogen, die den Effekt eines Zyklonabscheiders haben und Partikel aus dem Gasstrom abscheiden . Shapes of the channel in the tube forming the injector, which have the effect of a cyclone separator and deposit particles from the gas stream, are also contemplated within the scope of the invention.

Nachstehend werden beispielhaft weitere Einzelheiten, Merkmale und Vorteile der Erfindung mit Bezugnahme auf die Zeichnungen beschrieben. Es zeigen: Hereinafter, further details, features and advantages of the invention will be described by way of example with reference to the drawings. Show it:

Fig. 1 bis 7 in Längsschnitten Ausführungsformen von Fig. 1 to 7 in longitudinal sections embodiments of

erfindungsgemäßen Injektoren,  injectors according to the invention,

Fig. 8 bis 12 Austrittsöffnungen bei erfindungsgemäßen Fig. 8 to 12 outlet openings in the invention

Injektoren und  Injectors and

Fig. 13 und 14 in Längsschnitten weitere erfindungsgemäße Fig. 13 and 14 in longitudinal sections further inventive

Injektoren .  Injectors.

Bei dem von einem Rohr aus Silizium gebildeten Injektor 1 von Fig. 1 wird durch eine trichterförmige Erweiterung 3 des Kanals 2, durch welchen das Gas strömt, die Geschwindigkeit, mit welcher das Gas strömt, am Ende 4 des Injektors 1 verringert, so dass sich allenfalls Partikel ergebene Ablagerungen an den In the case of the injector 1 of FIG. 1, which is formed by a tube of silicon, a funnel-shaped extension 3 of the channel is formed 2, through which the gas flows, the speed at which the gas flows at the end 4 of the injector 1 is reduced, so that at most particle-related deposits on the

Flächen 5 des erweiterten Bereichs 3 des Kanals 2 ansetzen können und somit aus dem Gasstrom ausgeschieden werden. Die Erweiterung 3 kann kegel-, trichter- oder parabeltrichterförmig sein . Can set areas 5 of the extended portion 3 of the channel 2 and thus excreted from the gas stream. The extension 3 may be cone, funnel or parabola funnel-shaped.

Bei der in Fig. 2 gezeigten Ausführungsform des Injektors 1 ist das Ende des Kanals 2 mit Stufen 6 ausgebildet, so dass ein sich stufenförmig erweiternder Bereich 3 des Kanals 2 (Vergrößerung der Querschnittsfläche des Kanals 2) ergibt. Bei der in Fig. 2 vorgesehenen Ausführungsform des Injektors 1 bilden die Kanten der Stufen 6 Fallen für die allenfalls gebildete Partikel und stellen überdies Aufwachsorte für Ablagerungen dar. In the embodiment of the injector 1 shown in Fig. 2, the end of the channel 2 is formed with steps 6, so that a step-shaped widening portion 3 of the channel 2 (increase in the cross-sectional area of the channel 2) results. In the case of the embodiment of the injector 1 provided in FIG. 2, the edges of the steps 6 form traps for the possibly formed particles and, moreover, are growth sites for deposits.

Bei der in Fig. 3 gezeigten Ausführungsform eines Injektors 1 ist eine bis zum Ende 4 des Injektors 1 reichende Erweiterung 7 vorgesehen, die in dem in Fig. 3 gezeigten Ausführungsbeispiel im Wesentlichen kugelförmig ist. Alternativ kann die Erweiterung 7 auch zylinderförmig ausgebildet und mit Abstand vom Ende 4 des Injektors 1 vorgesehen sein. In the embodiment of an injector 1 shown in FIG. 3, an extension 7 extending to the end 4 of the injector 1 is provided, which is substantially spherical in the exemplary embodiment shown in FIG. Alternatively, the extension 7 may also be cylindrical and provided at a distance from the end 4 of the injector 1.

Fig. 4 zeigt eine Variante des Injektors 1 von Fig. 3 mit mehreren, im Beispiel drei, kugelförmigen Verwirbelungskammern in Form von Erweiterungen 7, wobei auch hier zylinderförmige Erweiterungen 7 als Verwirbelungskammern, wie die bei Fig. 3 erwähnten, vorgesehen sein können. Fig. 4 shows a variant of the injector 1 of Fig. 3 with a plurality, in the example three, spherical Verwirbelungskammern in the form of extensions 7, wherein here also cylindrical extensions 7 as Verwirbelungskammern, as mentioned in Fig. 3 may be provided.

Bei der in Fig. 5 gezeigten Ausführungsform ist am Ende des Rohres, das den Injektor 1 bildet, eine Verengung 8 der In the embodiment shown in Fig. 5 is at the end of the tube which forms the injector 1, a constriction 8 of the

Querschnittsfläche des Kanals 2 vorgesehen, die durch einen ringförmigen Vorsprung 9, der von der Wand des Kanals 2 nach innen ragt, gebildet ist. Der ringförmige Vorsprung 8 kann, wie in Fig. 5 gezeigt, eine abgerundete Querschnittsform aufweisen, kann aber auch kantig ausgebildet sein. Cross-sectional area of the channel 2 is provided, which is formed by an annular projection 9, which projects from the wall of the channel 2 inwardly. The annular projection 8, as shown in Fig. 5, have a rounded cross-sectional shape, but can also be edged.

Bei der in Fig. 6 gezeigten Ausführungsform sind im Bereich des Endes 4 des Rohres, das den Injektor 1 bildet, mehrere In the embodiment shown in Fig. 6 are in the region of the end 4 of the tube which forms the injector 1, a plurality

ringförmige Nuten 10 vorgesehen. Bei dem in Fig. 6 gezeigten Ausführungsbeispiel nimmt die Tiefe der Nuten 10 zum Ende 4 des Rohres des Injektors 1 hin zu. In Betracht gezogen ist aber auch eine Ausführungsform, bei welcher die Tiefe aller oder einzelner Nuten 10 gleich groß ist. Diese Nuten 10 bilden zylinderförmige (scheibenförmige) Kammern, in denen sich allenfalls gebildete Partikel ansammeln und wo Ablagerungen anwachsen können, so dass Partikel mit dem Gas aus dem Injektor 1 nicht oder nur annular grooves 10 are provided. In the embodiment shown in FIG. 6, the depth of the grooves 10 increases towards the end 4 of the tube of the injector 1. But also considered is an embodiment in which the depth of all or individual grooves 10 is equal. These grooves 10 form cylindrical (disk-shaped) chambers in which accumulate any particles formed and where deposits can grow, so that particles with the gas from the injector 1 is not or only

verringert austreten. reduce leakage.

Bei der in Fig. 7 gezeigten Ausführungsform sind mit Abstand vom Ende 4 des Rohres, das den Injektor 1 bildet, In the embodiment shown in Fig. 7 are at a distance from the end 4 of the tube forming the injector 1,

Querschnittserweiterungen 11 vorgesehen, die als Fallen für Partikel wirken und erreichen, dass sich Ablagerungen dort abscheiden und ansammeln können. Die Querschnittserweiterungen 11 sind so ausgebildet, dass ihr stromabwärts (Strömungsrichtung des Gases Pfeil 12) liegendes Ende eine der Strömungrichtung entgegen gerichtete Nase 13 bildet. Cross-sectional extensions 11 are provided, which act as traps for particles and ensure that deposits can deposit and accumulate there. The cross-sectional widenings 11 are formed so that their downstream (flow direction of the gas arrow 12) lying end forms a direction of flow directed counterpart nose 13.

Die Fig. 8, 9 und 10 zeigen drei verschiedene Varianten für Austrittsöffnungen 20 an dem Ende des Rohres, welches den 8, 9 and 10 show three different variants for outlet openings 20 at the end of the tube, which the

Injektor 1 bildet. Die Austrittsöffnungen 20 können Löcher in Siliziumplatten (Fig. 8), Schlitze in Siliziumplatten (Fig. 9) oder ein Gitter ergebende Löcher im Siliziumplatten (Fig. 10) sein . Injector 1 forms. The exit openings 20 may be holes in silicon plates (FIG. 8), slots in silicon plates (FIG. 9), or grid-forming holes in the silicon plate (FIG. 10).

Fig. 11 zeigt in Stirnsicht einen Injektor 1 mit mehreren, in einem Kreis angeordneten, Austrittöffnungen 20. 11 shows an end view of an injector 1 with a plurality of outlet openings 20 arranged in a circle.

Fig. 12 zeigt einen Injektor 1 mit einem ringförmigen Fig. 12 shows an injector 1 with an annular

Austrittskanal 21. In Fig. 13 ist eine Ausführungsform eines erfindungsgemäßen Injektors 1 gezeigt, der mehrere Austrittskanäle 22 aufweist, wobei im Kanal 2 Prallflächen 23 und Verwirbelungsräume 24 vorgesehen sind. Outlet channel 21. In Fig. 13, an embodiment of an injector 1 according to the invention is shown, which has a plurality of outlet channels 22, wherein in the channel 2 baffles 23 and Verwirbelungsräume 24 are provided.

In Fig. 14 ist ein Injektor 1 mit einem Kanal 2 gezeigt, der einen zyklonartigen Hohlraum 25 aufweist, so dass in dem Bereich des zyklonartigen Hohlraums 25 Partikel abgeschieden werden, und aus dem einen Injektor 1 bildenden Rohr nicht austreten. In Fig. 14, an injector 1 is shown with a channel 2 having a cyclone-like cavity 25, so that in the region of the cyclone-like cavity 25 particles are deposited, and not emerge from the injector 1 forming a tube.

Zusammenfassend kann ein Ausführungsbeispiel der Erfindung wie folgt beschrieben werden: In summary, an embodiment of the invention can be described as follows:

Ein Injektor 1, der beim Herstellen von Halbleiterbauelementen zum Einleiten von Prozessgas in Kammern eingesetzt wird, besteht aus Silizium und weist einen Kanal 2 auf, der wenigstens einen erweiterten Bereich 3, 7, 10, 11, 24, 25 oder eine Verengung in Form einer ringförmigen Rippe 8 aufweist, so dass im Prozessgas enthaltende Partikel, die durch Absplitterungen von an den An injector 1, which is used in the manufacture of semiconductor devices for introducing process gas into chambers, consists of silicon and has a channel 2, the at least one extended region 3, 7, 10, 11, 24, 25 or a constriction in the form of a ring-shaped rib 8, so that in the process gas-containing particles by splintering of the

Wänden des Kanals 2 entstandenen Ablagerungen gebildet worden sind aus dem Prozessgas abgeschieden und im Injektor 1, Walls of the channel 2 have formed deposits are deposited from the process gas and in the injector 1,

insbesondere durch Anwachsen an die Innenfläche des Kanals 2, zurückgehalten werden und aus dem Injektor 1 nicht austreten. in particular by growth on the inner surface of the channel 2, are retained and do not escape from the injector 1.

Claims

Ansprüche : Claims : 1. Injektor (1) für das Zuführen von Gas in eine 1. injector (1) for supplying gas into one Prozesskammer, umfassend ein Rohr mit einem Kanal (2) mit wenigstens einer Austrittöffnung (20, 21) für das Gas am Ende (4) des Injektors (1), wobei das als Injektor (1) dienende Rohr aus Silizium besteht, dadurch  A process chamber comprising a pipe having a channel (2) with at least one outlet opening (20, 21) for the gas at the end (4) of the injector (1), said pipe serving as an injector (1) being made of silicon gekennzeichnet, dass der Kanal (2) in dem den Injektor (1) bildenden Rohr wenigstens einen Bereich mit einer  in that the channel (2) in the tube forming the injector (1) has at least one region with one Querschnittsfläche aufweist, die andere Abmessungen hat als die Querschnittsfläche des Kanals (2) in einem anderen Bereich .  Has cross-sectional area that has other dimensions than the cross-sectional area of the channel (2) in another area. 2. Injektor nach Anspruch 1, dadurch gekennzeichnet, dass die Querschnittsfläche des Kanals (2) im Bereich des Endes (4) des den Injektor (1) bildenden Rohres größer ist. 2. An injector according to claim 1, characterized in that the cross-sectional area of the channel (2) in the region of the end (4) of the injector (1) forming the tube is larger. 3. Injektor nach Anspruch 1, dadurch gekennzeichnet, dass die Querschnittsfläche des Kanals (2) im Bereich des Endes (4) des den Injektor (1) bildenden Rohres kleiner ist. 3. An injector according to claim 1, characterized in that the cross-sectional area of the channel (2) in the region of the end (4) of the injector (1) forming the tube is smaller. 4. Injektor nach Anspruch 2, dadurch gekennzeichnet, dass der Kanal (2) eine trichterförmige Erweiterung (3) aufweist. 4. Injector according to claim 2, characterized in that the channel (2) has a funnel-shaped extension (3). 5. Injektor nach Anspruch 4, dadurch gekennzeichnet, dass die Erweiterung (3) des Kanals (2) durch Stufen (6) gebildet ist . 5. An injector according to claim 4, characterized in that the extension (3) of the channel (2) by steps (6) is formed. 6. Injektor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass in dem Kanal (2) wenigstens eine im Wesentlichen kugelförmige Erweiterung (7) vorgesehen ist. 6. An injector according to claim 1 or 2, characterized in that in the channel (2) at least one substantially spherical enlargement (7) is provided. 7. Injektor nach Anspruch 6, dadurch gekennzeichnet, dass 7. Injector according to claim 6, characterized in that mehrere kugelförmige Erweiterungen (7), die ineinander übergehen, vorgesehen sind. several spherical extensions (7), one inside the other override, are provided. 8. Injektor nach Anspruch 1 oder 3, dadurch gekennzeichnet, dass am Ende (4) des den Injektor (1) bildenden Rohres eine den Querschnitt des Kanals (2) verringernde Ringrippe (8) vorgesehen ist, die zur Mitte des Kanals (2) hin vorsteht . 8. An injector according to claim 1 or 3, characterized in that at the end (4) of the injector (1) forming a tube the cross-section of the channel (2) reducing annular rib (8) is provided, which to the center of the channel (2). protrudes. 9. Injektor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass im Bereich des Endes (4) des Kanals (2) wenigstens eine ringförmige Nut (10) vorgesehen ist. 9. An injector according to claim 1 or 2, characterized in that in the region of the end (4) of the channel (2) at least one annular groove (10) is provided. 10. Injektor nach Anspruch 9, dadurch gekennzeichnet, dass mit Abstand voneinander mehrere Nuten (10) vorgesehen sind. 10. An injector according to claim 9, characterized in that a plurality of grooves (10) are provided at a distance from each other. 11. Injektor nach Anspruch 10, dadurch gekennzeichnet, dass die Tiefe der Nuten (10) zum Ende (4) des den Injektor (1) bildenden Rohres hin zunimmt. 11. An injector according to claim 10, characterized in that the depth of the grooves (10) towards the end (4) of the injector (1) forming tube increases. 12. Injektor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass im Kanal (2) wenigstens ein erweiterter Bereich (11) vorgesehen ist und dass die den Bereich (11) begrenzende Fläche mit einer der Richtung (Pfeil 12) der Gasströmung durch das den Injektor (1) bildenden Rohr entgegen 12. An injector according to claim 1 or 2, characterized in that in the channel (2) at least one extended area (11) is provided and that the area (11) delimiting surface with one of the direction (arrow 12) of the gas flow through the Injector (1) forming tube opposite gerichteten Nase (13) ausgebildet ist.  directed nose (13) is formed. 13. Injektor nach einem der Ansprüche 1 bis 12, dadurch 13. Injector according to one of claims 1 to 12, characterized gekennzeichnet, dass im Bereich des Endes (4) des den Injektor (1) bildenden Rohres Prallflächen (23) und  characterized in that in the region of the end (4) of the injector (1) forming tube baffles (23) and Verwirbelungsräume (24) vorgesehen sind.  Verwirbelungsräume (24) are provided. 14. Injektor nach einem der Ansprüche 1 bis 13, dadurch 14. Injector according to one of claims 1 to 13, characterized gekennzeichnet, dass im Kanal (2) ein zyklonartig  characterized in that in the channel (2) a cyclone-like wirkender Hohlraum (25) vorgesehen ist.  acting cavity (25) is provided.
PCT/EP2019/062618 2018-05-22 2019-05-16 Injector made of silicon for the semiconductor industry Ceased WO2019224098A1 (en)

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