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WO2019216570A1 - Cellule solaire - Google Patents

Cellule solaire Download PDF

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Publication number
WO2019216570A1
WO2019216570A1 PCT/KR2019/004806 KR2019004806W WO2019216570A1 WO 2019216570 A1 WO2019216570 A1 WO 2019216570A1 KR 2019004806 W KR2019004806 W KR 2019004806W WO 2019216570 A1 WO2019216570 A1 WO 2019216570A1
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WIPO (PCT)
Prior art keywords
conductivity type
doping
type region
doping concentration
semiconductor substrate
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Ceased
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PCT/KR2019/004806
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English (en)
Korean (ko)
Inventor
황성현
이경수
박상욱
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LG Electronics Inc
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LG Electronics Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell, and more particularly, to a solar cell having an improved doping profile in consideration of characteristics of different conductive regions having different conductivity types.
  • Solar cells are the next generation of cells that convert solar energy into electrical energy and can be manufactured by forming various layers and electrodes according to design. Solar cells may vary in efficiency of solar cells depending on the design of various layers and electrodes.
  • the solar cell is designed and manufactured by controlling only the doping concentration without considering the characteristics of the different conductivity type regions having different conductivity types. As such, if different conductive type regions having different conductivity types are formed to have the same type profile only in consideration of the doping concentration, carrier movement probability, series resistance, etc. are not taken into consideration, which limits the efficiency of the solar cell. There was.
  • the present invention is to provide a solar cell capable of improving the efficiency by having a doping profile suitable for each conductive region.
  • the present invention is to provide a solar cell that can improve the efficiency by controlling the shape, maximum, minimum and average doping concentration of the doping profile in consideration of the characteristics required for each conductive type region.
  • the first and second conductivity type regions having heterogeneous junctions with the semiconductor substrate have different doping profiles. More specifically, the first conductivity type region has a first doping profile having a stepped shape in which the doping concentration decreases in steps toward the semiconductor substrate, and the second conductivity type region has a doping concentration toward the semiconductor substrate. Has a second doping profile with a progressive shape that gradually decreases.
  • the solar cell the semiconductor substrate; A first passivation layer on one surface of the semiconductor substrate; A second passivation film on the other surface of the semiconductor substrate; The first conductivity type region located on one surface of the semiconductor substrate on the first passivation layer and having a first conductivity type; The second conductivity type region positioned on the second passivation layer on the other side of the semiconductor substrate and having a second conductivity type opposite to the first conductivity type; A first electrode electrically connected to the first conductivity type region; And a second electrode electrically connected to the first conductivity type region.
  • the semiconductor substrate may have the first conductivity type that is the same as the first conductivity type region and that is opposite to the second conductivity type region.
  • the first conductivity type region may be located at the front side of the solar cell, and the second conductivity type region may be located at the rear side of the solar cell.
  • the first doping profile includes a first uniform doping section having a first doping concentration and a second uniform doping section having a first doping concentration located near the surface adjacent to the first electrode. can do.
  • the second doping profile may include one uniform doping section positioned near the surface adjacent to the second electrode and a linear reduction section in which the doping concentration linearly decreases toward the semiconductor substrate.
  • the doping concentration of the uniform doping interval of the second doping profile may be higher than the first doping concentration of the first doping profile.
  • a second doping concentration difference that is a difference between the second doping concentration and the lowest doping concentration may be greater than a first doping concentration difference that is a difference between the first doping concentration and the second doping concentration.
  • the average doping concentration of the linear reduction period of the second doping profile may be lower than the average doping concentration of the second uniform doping period of the first doping profile.
  • the first doping concentration is 4 X 10 20 to 8 X 10 20 / cm 3 in the first doping profile
  • the second doping concentration is 9 X 10 19 to 3 X 10 20 / cm 3
  • the second doping The doping concentration of the uniform doping interval of the profile may be 8 X 10 20 to 3 X 10 21 / cm 3 .
  • the thickness of the second uniform doping section is greater than the thickness of the first uniform doping section in the first conductivity type region, and the thickness of the linear reduction section is greater than the thickness of the uniform doping section in the second conductivity type region. Can be.
  • the thickness of the uniformly doped region of the second conductive region may be greater than the thickness of the first uniformly doped region of the first conductive region.
  • the semiconductor substrate and the first conductivity type region may include phosphorus (P) as a first conductivity type dopant, and the second conductivity type region may include boron (B) as a second conductivity type dopant.
  • P phosphorus
  • B boron
  • the first conductivity type region includes amorphous silicon including a first conductivity type dopant
  • the second conductivity type region includes amorphous silicon including a second conductivity type dopant
  • the first passivation layer is intrinsic amorphous silicon.
  • the second passivation layer may include intrinsic amorphous silicon.
  • the second conductivity type region having a conductivity type different from that of the semiconductor substrate has a doping profile that gradually decreases toward the semiconductor substrate, so that the majority carrier of the second conductivity type region is stable.
  • a first conductivity type region having the same conductivity type as the semiconductor substrate may have a stepped doping profile to block movement of minority carriers of the first conductivity type region. That is, the open voltage can be improved by smoothing the movement of the majority carriers in the second conductivity type region constituting the pn junction which directly contributes to the photoelectric conversion, and blocking the movement of the minority carriers in the first conductivity type region. Thereby, the efficiency of a solar cell can be improved.
  • the first doping type located on the side where a relatively large amount of light is incident by making the maximum doping concentration of the second conductive type area located on the rear side larger than the maximum doping concentration of the first conductive type area on the front surface.
  • the contact resistance between the second conductivity type region and the second electrode can be reduced while minimizing absorption of light in the region.
  • the contact resistance between the second conductivity type region forming the pn junction and the second electrode may be reduced to more smoothly move the multiple carriers.
  • the concentration of the second uniform doping section may be relatively high to effectively improve the effect of blocking the movement of minority carriers. As a result, it is possible to improve the density and thereby improve the efficiency of the solar cell.
  • FIG. 1 is a partial cross-sectional view of a solar cell according to an embodiment of the present invention.
  • FIG. 2 is a doping profile of the first and second conductivity-type regions of a solar cell according to one embodiment of the invention.
  • any part of the specification “includes” other parts, unless otherwise stated, other parts are not excluded, and may further include other parts.
  • a part of a layer, film, region, plate, etc. is said to be “on” another part, this includes not only the case where the other part is “just above” but also the other part located in the middle.
  • parts such as layers, films, regions, plates, etc. are “just above” another part, it means that no other part is located in the middle.
  • FIG. 1 is a partial cross-sectional view of a solar cell according to an embodiment of the present invention.
  • the solar cell 150 includes a semiconductor substrate 160 including a base region 110 and a first substrate formed on one surface (eg, a front surface) of the semiconductor substrate 160.
  • the first electrode 42 may be electrically connected to the first conductive region 20
  • the second electrode 44 may be electrically connected to the second conductive region 30. This is explained in more detail.
  • the semiconductor substrate 160 may include the base region 110 having the first or second conductivity type by including the first or second conductivity type dopant at a relatively low doping concentration.
  • the base region 110 may be composed of a single crystalline semiconductor (eg, a single monocrystalline or polycrystalline semiconductor, for example, monocrystalline or polycrystalline silicon, in particular monocrystalline silicon) including a first or second conductivity type dopant.
  • the solar cell 150 based on the base region 110 or the semiconductor substrate 160 having high crystallinity and fewer defects has excellent electrical characteristics.
  • the semiconductor substrate 160 may include only the base region 110 without the doped region formed by additional doping or the like. As a result, degradation of the passivation characteristic of the semiconductor substrate 160 due to the doped region can be prevented.
  • antireflection structures may be formed on the front and rear surfaces of the semiconductor substrate 160 to minimize reflection.
  • the antireflection structure may include a texturing structure having irregularities in the form of a pyramid or the like.
  • the texturing structure formed on the semiconductor substrate 160 may have a predetermined shape (eg, pyramid shape) having an outer surface formed along a specific crystal surface (eg, a (111) surface) of the semiconductor. If concavities and convexities are formed on the front surface of the semiconductor substrate 160 by such texturing and the surface roughness is increased, the light loss may be minimized by lowering the reflectance of the light incident into the semiconductor substrate 160.
  • the present invention is not limited thereto, and the texturing structure may be formed only on one surface of the semiconductor substrate 160, or the texturing structure may not be formed on the front and rear surfaces of the semiconductor substrate 160.
  • the first passivation film 52 is formed (eg, contacted) on the front surface of the semiconductor substrate 160
  • the second passivation film 54 is formed (eg, contacted) on the back surface of the semiconductor substrate 160.
  • the passivation characteristic can be improved.
  • the first and second passivation layers 52 and 54 may be formed entirely on the front and rear surfaces of the semiconductor substrate 160, respectively. Accordingly, it can be easily formed without additional patterning while having excellent passivation characteristics. Since the carrier passes through the first or second passivation film 52, 54 to the first or second conductivity type regions 20, 30, the thickness of each of the first and second passivation films 52, 54, respectively. May be smaller than the thickness of each of the first conductivity type region 20 and the second conductivity type region 30.
  • the first and second passivation layers 52 and 54 may be formed of intrinsic amorphous semiconductor (eg, intrinsic amorphous silicon (i-a-Si)) layers. Then, since the first and second passivation films 52 and 54 have similar characteristics including the same semiconductor material as the semiconductor substrate 160, the passivation characteristics can be more effectively improved. Thereby, the passivation characteristic can be improved significantly.
  • the present invention is not limited thereto. Accordingly, the first and / or second passivation films 52 and 54 may include an intrinsic amorphous silicon carbide (i-a-SiCx) layer or an intrinsic amorphous silicon oxide (i-a-SiOx) layer. According to this, the effect due to the wide energy band gap can be improved, but the passivation characteristics may be slightly lower than the case of including an intrinsic amorphous silicon (i-a-Si) layer.
  • i-a-Si intrinsic amorphous silicon
  • the first conductive region 20 including the first conductive dopant at a higher doping concentration than the semiconductor substrate 160 may be positioned (eg, contacted) on the first passivation layer 52.
  • a second conductivity type region 30 including a second conductivity type dopant having a second conductivity type opposite to the first conductivity type at a higher doping concentration than the semiconductor substrate 160 is positioned on the second passivation layer 54. (Eg, contact).
  • the carrier transfer path may be shortened and the structure may be simplified.
  • the first conductivity type region 20 and the second conductivity type region 30 are formed separately from the semiconductor substrate 160, a material different from the semiconductor substrate 160 and / or can be easily formed on the semiconductor substrate 160. Or a crystal structure.
  • each of the first conductivity type region 20 and the second conductivity type region 30 is formed by doping the first or second conductivity type dopant to an amorphous semiconductor that can be easily manufactured by various methods such as deposition. Can be. Then, the first conductivity type region 20 and the second conductivity type region 30 can be easily formed by a simple process.
  • the semiconductor substrate 160 may have a first conductivity type. Then, the first conductivity type region 20 has the same conductivity type as the semiconductor substrate 160 and constitutes a front surface electric field region having a high doping concentration, and the second conductivity type region 30 is formed of the semiconductor substrate 160. It is possible to construct the emitter region with the opposite conductivity type. Then, the second conductivity type region 30, which is an emitter region, may be located at the rear side of the semiconductor substrate 160 and thus may have a sufficient thickness since it does not interfere with light absorption to the front side.
  • the first conductivity type region 20, which is the front electric field region, is not directly involved in photoelectric conversion and is located at the front surface of the semiconductor substrate 160 and is thinner than the second conductivity type region 30 because it relates to light absorption toward the front surface. It can be formed as. As a result, light loss caused by the first conductivity type region 20 may be minimized.
  • Examples of the p-type dopant used as the first or second conductivity type dopant include group III elements such as boron (B), aluminum (Al), gallium (Ga), and indium (In). Group 5 elements, such as phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb), are mentioned. In addition, various dopants may be used as the first or second conductivity type dopants.
  • the semiconductor substrate 160 and the first conductivity-type region 20 may have an n-type, and the second conductivity-type region 30 may have a p-type.
  • the semiconductor substrate 160 may have an n-type, so that a life time of the carrier may be excellent.
  • the semiconductor substrate 160 and the first conductivity type region 20 may include phosphorus (P) as an n-type dopant, and the second conductivity type region 30 may include boron (B) as a p-type dopant. can do.
  • P phosphorus
  • B boron
  • the present invention is not limited thereto, and the first conductivity type may be p type and the second conductivity type may be n type.
  • the first conductivity type region 20 and the second conductivity type region 30 may include amorphous silicon (a-Si) each having a first or second conductivity type dopant.
  • the first and second conductivity-type regions 20 and 30 may each be formed of an amorphous silicon layer having a first or second conductivity type dopant.
  • the first and second conductivity-type regions 20 and 30 include the same semiconductor material (ie, silicon) as the semiconductor substrate 160 and the first and second passivation layers 52 and 54. It can have similar characteristics as). As a result, the carrier can be more effectively moved and a stable structure can be realized.
  • first passivation layer 52 and the first conductivity-type region 20 may be successively performed by an in-situ process which is performed while changing only the source gas in the same apparatus (eg, a deposition apparatus).
  • the second passivation layer 54 and the second conductivity-type region 30 can be formed by an in-situ process which is performed continuously while changing only the fuel gas in the same apparatus. This can simplify the manufacturing process.
  • the doping profiles of the first and second conductive regions 20 and 30 are different from each other in consideration of the role and required characteristics of the first and second conductive regions 20 and 30. Form to have. This will be described in detail with reference to FIG. 2 together with FIG. 1.
  • 2 is a doping profile of the first and second conductivity type regions 20 and 30 of a solar cell according to one embodiment of the invention.
  • 2A illustrates a first doping profile PF1 of the first conductivity type region 20 and (b) illustrates a second doping profile PF2 of the second conductivity type region 30.
  • PF1 of the first conductivity type region 20
  • PF2 of the second conductivity type region 30.
  • they have the same doping concentration at the same position on the y axis.
  • the first doping profile PF1 has a step shape in which the doping concentration decreases in stages.
  • the doping concentration of the second conductivity type dopant is gradually increased while the second conductivity type region 30 positioned on the rear surface of the semiconductor substrate 160 and having a different conductivity type from the semiconductor substrate 160 faces the semiconductor substrate 160. It has a second doping profile PF2 having a decreasing progressive shape.
  • the aforementioned doping profile may be analyzed by various analytical methods, for example, secondary ion mass spectrometry (SIMS) (eg, time-of-flight secondary ion mass spectrometry (TOF-SIMS)).
  • SIMS secondary ion mass spectrometry
  • TOF-SIMS time-of-flight secondary ion mass spectrometry
  • the present invention is not limited thereto, and various analytical methods and analysis devices may be used.
  • the majority carrier having a desired doping concentration of the second conductivity type dopant (holes when the second conductivity type is p-type and electrons when n type) It may have a first doping profile PF1 having a gradual shape so as not to interfere with the movement of. As a result, the plurality of carriers may smoothly move through the second conductivity type region 30.
  • the doping concentration of the first conductivity type dopant is undesired minority carriers (in the case where the first conductivity type is n-type, hole or p type Electron) may have a stepped second doping profile PF2 that blocks movement. Then, the doping concentration difference due to the step shape may serve as a barrier of the minority carriers in the first conductivity type region 20 to block the minority carriers.
  • a plurality of uniform doping sections UD11 and UD12 having a substantially uniform doping concentration may exist.
  • the uniform doping sections UD11 and UD12 may refer to sections in which a difference in doping concentration of the first conductivity type dopant is within 10% in a portion having a thickness of at least 5% or more of the thickness of the first conductivity type region 20. Can be.
  • the doping concentration difference may be greater than or equal to 1 ⁇ 10 19 / cm 3 in different uniform doping intervals UD11 and UD12.
  • the present invention is not limited thereto.
  • the thickness, the doping concentration difference, and the like which are regarded as the uniform doping intervals UD11 and UD12, may be different.
  • a portion having a substantially uniform doping concentration may be recognized as having a constant doping concentration step, it may be determined as different uniform doping intervals UD11 and UD12.
  • the first conductivity type region 20 is formed separately from the semiconductor substrate 160 and may have passivation characteristics by the first passivation layer 52, the first conductivity type region 20 does not directly participate in photoelectric conversion.
  • the first doping profile PF1 of the conductive region 20 is stepped to effectively block the minority carrier movement.
  • a section having a shape in which the doping concentration of the second conductivity type dopant continues to decrease toward the semiconductor substrate 160 is linearly reduced.
  • the semiconductor substrate 160 is provided with one uniform doping section UD2 having a uniform doping concentration C21 near the surface adjacent to the second electrode 44 but from the boundary of the uniform doping section UD2.
  • the doping concentration is gradually or linearly increased from the highest doping concentration C21 to the lowest doping concentration C23 at the boundary of the semiconductor substrate 160 or the second passivation film 54. May decrease.
  • the uniform doping section UD2 may mean a section in which a difference in doping concentration of the second conductivity type dopant is within 10% in a portion having a thickness of at least 5% or more of the thickness of the second conductivity type region 30.
  • the present invention is not limited thereto, and the thickness and the doping concentration difference, which are regarded as the uniform doping interval UD2, may be different.
  • the doping concentration is not necessarily reduced to a linear shape, and even if the decreasing slope is slightly changed, if the uniform doping interval does not exist, it may be determined as a progressive shape or a linear reduced shape.
  • even if there is a section in which the doping concentration is partially increased toward the semiconductor substrate 160 it may have a gradual shape or a linear decrease shape if it is within an error range.
  • the first doping concentration C11 for example, the average doping concentration of the first uniform doping section UD11 of the first doping profile PF1 corresponding to the high concentration doping portion of the first conductivity type region 20
  • the doping concentration C21 for example, the average doping concentration
  • the carrier required in the second conductivity-type region 30 forming the pn junction by relatively increasing the doping concentration or the highest doping concentration near the surface of the second conductivity-type region 30 forms the second electrode 44. It can move smoothly with low resistance.
  • the life time of the carrier may be reduced and incident light may be lost. It can minimize lifespan degradation and light loss.
  • the first doping concentration C11 (eg, average doping concentration) of the first uniform doping period UD11 of the first doping profile PF1 and the second doping concentration C12 of the second uniform doping period UD12
  • the second doping concentration C12 (eg, the average doping concentration) and the lowest doping concentration C13 of the second uniform doping interval UD12 is greater than the first doping concentration difference D1, which is a difference between the average doping concentrations D1.
  • the second doping concentration difference D2 may be greater than.
  • the lowest doping concentration C13 may mean the lowest doping concentration in the first conductivity type region 20 or a doping concentration near the boundary with the first passivation layer 52.
  • the linear reduction period LD2 of the second doping profile PF2 is greater than the second doping concentration C21 (eg, the average doping concentration) of the second uniform doping period UD12 of the first doping profile PF1.
  • the average doping concentration of may be lower.
  • the doping concentration C21 of the second uniform doping period UD12 is relatively high, thereby maximizing the effect of blocking the movement of minority carriers.
  • the doping concentration of the first conductivity type dopant in the first passivation film 52 or the doping concentration of the second conductivity type dopant in the second passivation film 54 is 5 ⁇ 10 16 to 6 ⁇ 10 18 / cm 3 . It may be at the same level with each other to the extent that it is determined to be intrinsic amorphous silicon.
  • the first doping concentration C11 of the first uniform doping period UD11 may be 4 ⁇ 10 20 to 8 ⁇ 10 20 / cm 3
  • the second uniform doping period UD12 may be The second doping concentration C12 may be 9 ⁇ 10 19 to 3 ⁇ 10 20 / cm 3 .
  • the doping concentration C21 of the uniform doping section UD2 in the second doping profile PF2 may be 9 ⁇ 10 20 to 3 ⁇ 10 21 / cm 3 , and the doping concentration of the linear reducing section LD2 is uniform. It may gradually decrease (eg, linearly) from the doping concentration C21 of the doping section UD2 to the lowest doping concentration C23 in the portion adjacent to the second passivation layer 54.
  • the invention of the ball is not limited thereto, and the doping concentration of each of the sections UD11, UD12, UD2, and LD2 of the first and second passivation layers 52 and 54 and the first and second conductivity-type regions 20 and 30 is not limited thereto. Specific values such as and the like may have various values.
  • first and second doping profiles PF1 and PF2 may be implemented by various process conditions (type and ratio of raw material gas, deposition rate, etc.) during a manufacturing process (for example, a deposition process). For example, it is possible to form a profile of a desired shape more easily through heat treatment after deposition.
  • the first conductive region 20 includes phosphorus (P), which is an n-type dopant as the first conductive dopant, and the second conductive region 30 is a p-type dopant as the second conductive dopant.
  • the boron having a relatively small atomic size easily diffuses in the direction toward the semiconductor substrate 160 during the heat treatment after deposition, thereby forming the above-described linear doping profile PF2.
  • phosphorus having a relatively large atomic size diffuses relatively less to more easily form a stepped first doping profile PF1.
  • the thickness of the second uniformly doped section UD12 is greater than the thickness of the first uniformly doped section UD11 in the first conductive region 20, and the uniformly doped section in the second conductive region 30.
  • the thickness of the linear reduction section LD2 may be greater than the thickness of UD2.
  • the thickness of the uniformly doped section UD2 may be greater in the second conductivity type region 30 than the thickness of the first uniformly doped section UD11 of the first conductivity type region 20. This is to maximize the efficiency of the solar cell 150 in consideration of the roles and effects of the first and second conductivity-type regions 20 and 30 and each of the sections UD11, UD12, UD2, and LD2 included therein.
  • the present invention is not limited thereto.
  • a first electrode 42 electrically connected thereto is positioned (eg, contacted) on the first conductive region 20, and electrically connected to the second conductive region 30.
  • the second electrode 44 is positioned (for example, in contact).
  • the first electrode 42 may include a first transparent electrode layer 420 positioned on the first conductivity type region 20, and a first metal electrode layer 420 positioned on the first transparent electrode layer 420. . On at least a portion of the first metal electrode layer 420, a ribbon, a wiring material, an interconnector, or the like for connection with another solar cell 150 or an external circuit may be bonded.
  • the first transparent electrode layer 420 may be entirely formed (eg, contacted) on the first conductivity type region 20.
  • the overall formation may include not only covering the entirety of the first conductivity-type region 20 without an empty space or an empty region, but inevitably when some portions are not formed.
  • a desired carrier can easily reach the first metal electrode layer 422 through the first transparent electrode layer 420, thereby horizontally.
  • the resistance in the direction can be reduced. Since the crystallinity of the first conductivity type region 20 formed of an amorphous semiconductor layer or the like may be relatively low, the mobility of the carrier may be low, and thus, the carrier may be moved in a horizontal direction with the first transparent electrode layer 420. It is to lower the resistance.
  • the first transparent electrode layer 420 may be formed of a material (transparent material) that may transmit light.
  • the first transparent electrode layer 420 may be formed of indium tin oxide (ITO), aluminum zinc oxide (AZO), boron zinc oxide (BZO), and indium tungsten. It may include at least one of an oxide (indium tungsten oxide, IWO) and indium cesium oxide (ICO).
  • ITO indium tin oxide
  • AZO aluminum zinc oxide
  • BZO boron zinc oxide
  • Itungsten it may include at least one of an oxide (indium tungsten oxide, IWO) and indium cesium oxide (ICO).
  • IWO indium tungsten oxide
  • ICO indium cesium oxide
  • the present invention is not limited thereto, and the first transparent electrode layer 420 may include various other materials.
  • the first transparent electrode layer 420 of the present embodiment may include hydrogen while using the above-described material as a main material.
  • the first transparent electrode layer 420 includes hydrogen, mobility of electrons or holes may be improved, and transmittance may be improved.
  • the metal located on the first transparent electrode layer 420 may be included as a main material (the material included in the largest amount) to improve characteristics such as carrier collection efficiency and resistance reduction.
  • various materials providing conductivity may be used, for example, silver (Ag), aluminum (Al), copper (Cu), tin (Sn), or the like.
  • the first metal electrode layer 422 may be formed by applying and baking a paste including a crosslinked resin, a solvent, and the like in addition to the metal. However, since fire-through is not required for the first metal electrode layer 422, the first metal electrode layer 422 may not include the glass frit.
  • the first metal electrode layer 422 may contain metal, the first metal electrode layer 422 may have a predetermined pattern to minimize shading loss. As a result, light may be incident to a portion where the first metal electrode layer 422 is not formed.
  • the first metal electrode layer 422 extends in a first direction and is located in parallel with each other, and a second direction crossing the first direction (eg, orthogonal) and a second direction (vertical direction in the drawing). It may include a bus bar formed to be electrically connected to the first finger line.
  • the wiring member or the like may be attached or connected to the bus bar in a one-to-one correspondence.
  • the thickness of the first electrode metal layer 422 may be greater than the thickness of the first transparent electrode layer 420. This is because it is sufficient that the first transparent electrode layer 420 is formed as a whole to form an electrical passage, and the first metal electrode layer 422 may have a sufficient thickness in consideration of electrical resistance and the like.
  • the second electrode 44 may include the second transparent electrode layer 440 and the second metal electrode layer 442.
  • the role of the second transparent electrode layer 440 and the second metal electrode layer 442 of the second electrode 44 except that the second electrode 44 is positioned over the second conductivity-type region 30, a material, Shape, thickness, and the like are the same as the role, material, shape, thickness, etc. of the first transparent electrode layer 420 and the first metal electrode layer 422 of the first electrode 42, and thus descriptions thereof may be applied.
  • the second metal electrode layer 442 may include a finger line and a bus bar. In this case, the bus bars of the first metal electrode layer 422 and the bus bars of the second metal electrode layer 442 may be formed in the same number.
  • the finger lines of the first metal electrode layer 422 and the finger lines of the second metal electrode layer 422 may have the same width, pitch and / or number, or may have different widths, pitches and / or numbers.
  • first and second transparent electrode layers 420 and 440 or the first and second metal electrode layers 422 and 442 may have various materials, shapes, and thicknesses.
  • the first and second metal electrode layers 422 and 442 may have different shapes.
  • the first and second metal electrode layers 422 and 442 of the solar cell 150 have a predetermined pattern, so that the solar cell 150 may enter the front and rear surfaces of the semiconductor substrate 160. It has a double-sided bi-facial structure. As a result, the amount of light used in the solar cell 150 may be increased, thereby contributing to the improvement of the efficiency of the solar cell 150.
  • the present invention is not limited thereto. Accordingly, the second metal electrode layer 442 may have a structure in which the second metal electrode layer 442 is formed entirely on the rear side of the semiconductor substrate 160.
  • the second doping profile in which the second conductivity-type region 30 having a conductivity type different from that of the semiconductor substrate 160 gradually decreases toward the semiconductor substrate 160.
  • a plurality of carriers in the second conductivity type region 30 can be stably moved with PF2.
  • the first conductivity type region 20 having the same conductivity type as the semiconductor substrate 160 has a stepped first doping profile PF1 to block movement of minority carriers in the first conductivity type region 20, thereby recombining. (recombination) can be reduced.
  • the smoothing of the movement of the majority carriers in the second conductivity-type region 30 constituting the pn junction directly contributing to the photoelectric conversion while blocking the movement of minority carriers in the first conductivity-type region 20 to open voltage Can improve.
  • the open voltage may be improved by about 0.5%. Accordingly, the efficiency of the solar cell 150 can be improved.
  • the doping concentration which is the highest doping concentration of the second conductivity-type region 30 located behind the first doping concentration C11 which is the highest doping concentration of the first conductivity-type region 20 located on the front surface ( C21 is made larger so that the contact resistance between the second conductivity type region 30 and the second electrode 44 is minimized while minimizing the absorption of light in the first conductivity type region 20 located on the side where light is relatively incident. Can be reduced. In this case, the contact resistance between the second conductivity-type region 30 and the second electrode 44 forming the pn junction may be reduced to smoothly move the multiple carriers.
  • the concentration of the second uniform doping section UD2 is relatively high to block the movement of minority carriers. Can be effectively improved. As a result, it is possible to improve the filling, for example, the filling can be improved by about 0.5%. Accordingly, the efficiency of the solar cell 150 can be improved.

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

La présente invention concerne, selon un mode de réalisation, une cellule solaire ayant une structure comprenant une première région conductrice et une seconde région conductrice qui sont liées de manière hétérogène à un substrat semi-conducteur, les première et seconde régions conductrices ayant différents types de profils de dopage. Plus précisément, la première région conductrice a un premier profil de dopage ayant une forme étagée dans laquelle la concentration de dopage diminue par étages dans une direction allant vers le substrat semi-conducteur, et la seconde région conductrice a un second profil de dopage ayant une forme non étagée dans laquelle la concentration de dopage diminue progressivement dans une direction allant vers le substrat semi-conducteur.
PCT/KR2019/004806 2018-05-09 2019-04-22 Cellule solaire Ceased WO2019216570A1 (fr)

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KR1020180053117A KR20190128860A (ko) 2018-05-09 2018-05-09 태양 전지
KR10-2018-0053117 2018-05-09

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WO2019216570A1 true WO2019216570A1 (fr) 2019-11-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115000243A (zh) * 2022-05-27 2022-09-02 中国科学院电工研究所 一种晶硅异质结太阳电池的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084012A1 (en) * 2008-10-02 2010-04-08 Commissariat A L'energie Atomique Heterojunction photovoltaic cell with dual doping and method of manufacture
KR20130048948A (ko) * 2011-11-03 2013-05-13 현대중공업 주식회사 양면수광형 태양전지 및 그 제조방법
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
KR20160010198A (ko) * 2014-07-18 2016-01-27 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR20170073480A (ko) * 2015-12-18 2017-06-28 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084012A1 (en) * 2008-10-02 2010-04-08 Commissariat A L'energie Atomique Heterojunction photovoltaic cell with dual doping and method of manufacture
KR20130048948A (ko) * 2011-11-03 2013-05-13 현대중공업 주식회사 양면수광형 태양전지 및 그 제조방법
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
KR20160010198A (ko) * 2014-07-18 2016-01-27 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR20170073480A (ko) * 2015-12-18 2017-06-28 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115000243A (zh) * 2022-05-27 2022-09-02 中国科学院电工研究所 一种晶硅异质结太阳电池的制备方法
CN115000243B (zh) * 2022-05-27 2023-11-21 中国科学院电工研究所 一种晶硅异质结太阳电池的制备方法

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