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WO2019245809A1 - Substrats minces rigidifiés et articles formés à partir de ceux-ci - Google Patents

Substrats minces rigidifiés et articles formés à partir de ceux-ci Download PDF

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Publication number
WO2019245809A1
WO2019245809A1 PCT/US2019/036647 US2019036647W WO2019245809A1 WO 2019245809 A1 WO2019245809 A1 WO 2019245809A1 US 2019036647 W US2019036647 W US 2019036647W WO 2019245809 A1 WO2019245809 A1 WO 2019245809A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate layer
glass frit
perimetrical
rib
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/036647
Other languages
English (en)
Inventor
Michael Edward Badding
David Frances DAWSON-ELLI
Sean Matthew Garner
Petr GORELCHENKO
Thomas Dale Ketcham
Sergey Nikolaevich SHUBIN
Ekaterina S SOROKINA
Cheng-gang ZHUANG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of WO2019245809A1 publication Critical patent/WO2019245809A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/70—Carriers or collectors characterised by shape or form
    • H01M4/80—Porous plates, e.g. sintered carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0471—Processes of manufacture in general involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H10W42/121—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0404—Methods of deposition of the material by coating on electrode collectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the physical dimensions and/or CTE of the perimetrical glass frit rib 120, and any additional glass frit rib bonded to the substrate layer 100 may be selected to maintain flatness of the substrate layer 100.
  • a perimetrical glass frit rib 120, and any additional glass frit rib bonded to the substrate layer 100 may comprise a CTE that is less than a CTE of the substrate layer 100 thereby producing tension within the substrate layer 100 during thermal cooling of the substrate layer 100 with the perimetrical glass frit rib 120 bonded thereto.
  • a perimetrical glass frit rib 120, and any additional glass frit rib bonded to the substrate layer 100 may comprise physical dimensions and/or a CTE that result in predictable deformation of the substrate layer 100.
  • a perimetrical glass frit rib 120, and any additional glass frit rib bonded to the substrate layer 100 may result in the substrate layer 100 bending predictably along a given axis, direction, etc., of the substrate layer 100.
  • the perimetrical glass frit rib 120 may not extend completely around the perimeter 110 of the substrate layer 100. That is, in some embodiments, the perimetrical glass frit rib 120 is segmented along the perimeter 110. In the alternative, or in addition to, the perimetrical glass frit rib 120 may extend along the perimeter 110 that is adjacent to one or more, but not all, of the ends 102, 104 and the sides 106, 108 of the substrate layer 100.
  • the substrate layer 100 with a plurality of perimetrical glass frit ribs 120, a plurality of glass frit ribs 121 and/or a plurality of glass frit ribs 123 may be rolled back into a roll, stored, transported, etc., and then un-rolled at an electronic device manufacturing line and/or singulation station before being singulated.
  • Table 1 below shows the gravitational deflection and the gravitation deflection per unit length for each of the substrate layers 100, with and without the perimetrical glass frit ribs 120, under the same conditions as Comparative Example 1.
  • a substrate layer 100 with a thickness of 25 pm and a perimetrical glass frit rib 120 with a width of 10 mm and a thickness of 35 pm reduced the gravitational deflection, per unit length, of the substrate layer 100 (without a perimetrical glass frit rib 120) by about 66%.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Glass Compositions (AREA)

Abstract

La présente invention concerne un substrat mince rigidifié doté d'une couche de substrat et d'une nervure de fritte de verre périmétrique liée à une première surface de la couche de substrat. La nervure de fritte de verre périmétrique liée à la première surface de la couche de substrat réduit la déviation, par unité de longueur, de la couche de substrat soumise à une charge de 5 grammes d'au moins 15 %. Une couche de dispositif électronique peut être liée thermiquement à une seconde surface de la couche de substrat opposée à la première surface, et la nervure de fritte de verre périmétrique liée à la première surface de la couche de substrat peut diminuer la déviation thermique, par unité de longueur, de la couche de substrat d'au moins 50 % lorsque la couche de substrat avec la couche de dispositif électronique est refroidie de 600 °C à 23° C.
PCT/US2019/036647 2018-06-21 2019-06-12 Substrats minces rigidifiés et articles formés à partir de ceux-ci Ceased WO2019245809A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862688112P 2018-06-21 2018-06-21
US62/688,112 2018-06-21

Publications (1)

Publication Number Publication Date
WO2019245809A1 true WO2019245809A1 (fr) 2019-12-26

Family

ID=68984200

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/036647 Ceased WO2019245809A1 (fr) 2018-06-21 2019-06-12 Substrats minces rigidifiés et articles formés à partir de ceux-ci

Country Status (2)

Country Link
TW (1) TW202016981A (fr)
WO (1) WO2019245809A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090064790A1 (en) * 2005-12-31 2009-03-12 Corning Incorporated Microreactor Glass Diaphragm Sensors
US20100127297A1 (en) * 2008-11-25 2010-05-27 Hwan Hee Jeong Semiconductor light-emitting device
CN101748378A (zh) * 2008-12-15 2010-06-23 北京北方微电子基地设备工艺研究中心有限责任公司 成膜载板及太阳能电池的生产方法
US20100317151A1 (en) * 2007-11-30 2010-12-16 Hynix Semiconductor Inc. Warpage resistant semiconductor package and method for manufacturing the same
KR101341326B1 (ko) * 2011-12-15 2013-12-13 (주)에스티아이 플렉시블 박막 기판 고정장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090064790A1 (en) * 2005-12-31 2009-03-12 Corning Incorporated Microreactor Glass Diaphragm Sensors
US20100317151A1 (en) * 2007-11-30 2010-12-16 Hynix Semiconductor Inc. Warpage resistant semiconductor package and method for manufacturing the same
US20100127297A1 (en) * 2008-11-25 2010-05-27 Hwan Hee Jeong Semiconductor light-emitting device
CN101748378A (zh) * 2008-12-15 2010-06-23 北京北方微电子基地设备工艺研究中心有限责任公司 成膜载板及太阳能电池的生产方法
KR101341326B1 (ko) * 2011-12-15 2013-12-13 (주)에스티아이 플렉시블 박막 기판 고정장치

Also Published As

Publication number Publication date
TW202016981A (zh) 2020-05-01

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