WO2019244650A1 - Composite tungsten oxide film and production method therefor, and film formation base material and article having said film - Google Patents
Composite tungsten oxide film and production method therefor, and film formation base material and article having said film Download PDFInfo
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C01—INORGANIC CHEMISTRY
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/006—Compounds containing tungsten, with or without oxygen or hydrogen, and containing two or more other elements
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/009—Compounds containing iron, with or without oxygen or hydrogen, and containing two or more other elements
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Definitions
- the present invention relates to a composite tungsten oxide film and a method for producing the same, and further relates to a film-forming substrate having the composite tungsten oxide film and an article utilizing the function of the composite tungsten oxide film.
- This application is based on Japanese Patent Application No. 2018-117340 filed in Japan on June 20, 2018 and Japanese Patent Application No. 2019-24926 filed on February 14, 2019. Which is incorporated herein by reference.
- Patent Literature 1 discloses a light-shielding member having a mirror surface state formed by vapor deposition of a metal such as aluminum as a light-shielding member such as a window material.
- a light-shielding member of a film formed by sputtering silver or the like the appearance becomes a half-mirror shape, so that when used outdoors, the reflection is dazzling and there is a problem in view.
- a light-shielding member using reflection generally has a feature that it reflects far-infrared rays and also has heat insulation. The reflection of the light from the light-shielding member including far-infrared rays is caused by the action of free electrons.
- the applicant has proposed an infrared shielding fine particle dispersion having composite tungsten oxide fine particles described in Patent Document 2.
- the composite tungsten oxide fine particles efficiently absorb sunlight, particularly light in the near infrared region, and have high transparency to visible light.
- composite tungsten oxide fine particles are dispersed in an appropriate solvent to form a dispersion, and after adding a medium resin to the obtained dispersion, a coating is formed on the substrate surface to form a thin film. And has a very high thermal barrier.
- the infrared shielding fine particle dispersion has high heat shielding properties due to its excellent light absorption properties, it has little reflection properties and therefore cannot be expected to have much heat insulating properties.
- Patent Document 3 discloses a composite tungsten oxide film manufactured by applying a solution containing a compound compound of a composite tungsten oxide to a substrate and then heat-treating the solution.
- a part of the film disclosed herein has a reflectance of about 30% at a wavelength of 1400 nm as shown by broken lines in FIGS. 2 and 3 of the document, and is expected to have some heat insulating properties.
- Patent Literature 4 discloses a Na x WO 3 film in which a solution containing a compound compound of a composite tungsten oxide is dropped on a rotating substrate, formed into a film by centrifugal force, and then fired in a reducing atmosphere. See FIG. According to No. 1, the film almost reflects light in the infrared region, and seems to have both a shielding property and a heat insulating property.
- such a composite tungsten oxide film is sometimes optically designed for the purpose of adjusting color tone, preventing reflection, and the like.
- the film thickness of the laminated film is extremely several nm to several hundred nm. thin. Therefore, it is necessary to control the thickness of the composite tungsten oxide film to be less than 100 nm, but it is difficult to control a region having a thickness of less than 100 nm by a coating method.
- the surface roughness of the laminated composite tungsten oxide film is required to be smooth, and if the surface roughness of the film formation surface is large, a desired optical design effect cannot be obtained.
- a physical method such as a vapor deposition method or a sputtering method which is disclosed in the example of Patent Document 1.
- the thin film formed by the physical film formation method can be a film from which elements other than the target composition are excluded.
- a dispersant or a medium resin that is not suitable for high-temperature treatment it can be provided to, for example, a tempered glass manufacturing process to be subjected to high-temperature heat treatment.
- the thickness of a thin film formed by a physical film formation method can be easily controlled even when the thickness is less than 100 nm, and a very smooth surface having an arithmetic average roughness of several nm or less can be formed.
- the structure is easily possible.
- Patent Document 5 proposes a window glass for a vehicle and a method for manufacturing the same, and uses a large-size in-line type sputtering apparatus capable of processing a large-area substrate such as a window for a vehicle. If such a manufacturing facility can be used, a high-quality and stable film having a uniform film thickness can be easily obtained, and the productivity is high.
- the film formation source of the physical film formation method (for example, a target material in the case of the sputtering method) may not be a single compound, but may be, for example, a combination of a single element composition or a mixture of a plurality of compounds. The flexibility of composition selection is extremely wide.
- Patent Document 6 proposes a composite tungsten oxide film formed by a sputtering method.
- a composite tungsten oxide film made of tungsten and at least one element selected from the group consisting of group IVa, group IIIa, group VIIb, group VIb and group Vb of the periodic table is formed on a glass substrate.
- the oxide film of this composition has an infrared transmittance of 40% or more and does not have sufficient heat ray shielding performance, and has a problem that its function cannot be exhibited unless it is formed as a multilayer film with another transparent dielectric film.
- the heat ray shielding performance of the composite tungsten oxide film formed by the physical film formation method is not yet sufficient.
- the film formed by the coating method has a high function of absorbing light and shielding heat rays, but cannot expect much heat insulation.
- there is a problem that the smoothness of the film is poor.
- the present invention has been made to solve such a situation, and has a function of reflecting and shielding infrared light, that is, a function of shielding heat rays by heat insulation, while maintaining transparency in a visible light region.
- the present invention provides a composite tungsten film having high film smoothness and a method for producing the same, and further provides a film-forming substrate or an article utilizing these functions.
- the present inventors have intensively studied a composite tungsten oxide film with respect to the above-mentioned problems, and according to a physical film forming method, have excellent visible light transmittance by optimizing conditions at the time of film formation. While exhibiting the function of reflecting infrared rays to insulate heat while maintaining the above, and in addition, a composite tungsten film having an extremely smooth film was obtained.
- one embodiment of the present invention provides a compound represented by the general formula M x W y O z (where M is one or more elements selected from alkali metals, alkaline earth metals, Fe, In, Tl, and Sn; (W is tungsten, O is oxygen) is a composite tungsten oxide film having a composition represented by the following formula: 0.001 ⁇ x / y ⁇ 1, 2.2 ⁇ z / y ⁇ 3.0 It contains substantially no organic components, has a transmittance of 50% or more at a wavelength of 550 nm, a transmittance of 30% or less at a wavelength of 1400 nm, and a reflectance of 35% or more at a wavelength of 1400 nm.
- a composite tungsten oxide film having a function of reflecting and shielding infrared light, that is, a function of shielding heat rays by heat insulation, while maintaining transparency in a visible light region.
- the surface roughness Sa may be 20 nm or less.
- the sheet resistance may be less than 10 5 ⁇ / ⁇ .
- the composite tungsten oxide film may be derived from sputtering.
- M is at least one element selected from Cs, Rb, K, Tl, In, Ba, Li, Na, Ca, Sr, Fe, and Sn. Is also good.
- the composite tungsten oxide film may have a hexagonal crystal structure.
- the hexagonal phase Since the hexagonal phase has a greater reflection in the infrared region, it can be efficiently reflected.
- one embodiment of the present invention provides an intensity ratio of the diffraction intensity I (002) of the hexagonal (002) plane to the diffraction intensity I (200) of the hexagonal (200) plane by X-ray diffraction using CuK ⁇ radiation.
- Is I (002) / I (200), I (002) / I (200) is 0.30 or more and 0.50 or less, and the a-axis of hexagonal crystal by X-ray diffraction using CuK ⁇ ray is The ratio c / a to the c-axis may be 1.018 to 1.029.
- a composite tungsten oxide film that satisfies the above requirements by X-ray diffraction analysis is a composite tungsten oxide film that functions to reflect infrared rays and to insulate heat while maintaining excellent visible light transmittance.
- one embodiment of the present invention provides a compound represented by the general formula M x W y O z (where M is one or more elements selected from an alkali metal, an alkaline earth metal, Fe, In, Tl, and Sn; (W is tungsten, O is oxygen) is a composite tungsten oxide film having a composition represented by the following formula: 0.001 ⁇ x / y ⁇ 1, 2.2 ⁇ z / y ⁇ 3.0
- the composite tungsten oxide film has a hexagonal crystal structure, and has a diffraction intensity I (002) of a hexagonal (002) plane and a diffraction intensity of a hexagonal (200) plane by X-ray diffraction using CuK ⁇ radiation.
- I (200) When the intensity ratio of I (200) is I (002) / I (200), I (002) / I (200) is 0.30 or more and 0.50 or less, and X-ray diffraction using CuK ⁇ ray
- the ratio c / a between the a-axis and the c-axis of the hexagonal crystal is 1.018 to 1.029.
- a composite tungsten oxide film that satisfies the above requirements by X-ray diffraction analysis is a composite tungsten oxide film that functions to reflect infrared rays and to insulate heat while maintaining excellent visible light transmittance.
- M may be one or more elements selected from Cs, Rb, K, Tl, and Ba.
- the composite tungsten oxide film can have a thickness greater than 20 nm.
- ⁇ ⁇ Another embodiment of the present invention is a film-forming substrate having the above-described composite tungsten oxide film formed on at least one surface of a substrate on which a film is to be formed.
- the substrate on which the film is to be formed may have a softening point or a heat distortion temperature of 400 ° C. or higher.
- a film-forming substrate having more excellent functions can be obtained by heat treatment after film formation.
- the substrate on which the film is to be formed can be glass.
- glass By using glass as the base material for film formation, it is used in glass windows for vehicle windows and architectural windows, glass fibers, glass for solar power generation, glass for displays, glass for lenses and mirrors, semiconductors and MEMS, and the like.
- Equipment using glass used in a wide range of fields, such as glass substrates, can be provided with an infrared shielding function.
- Another aspect of the present invention is an article having one or more of the composite tungsten oxide film and / or the film-forming substrate described above.
- another aspect of the present invention is a method for producing a composite tungsten oxide film, comprising a film forming step of forming a film by a physical film forming method, and a heat treatment step of heat treating the film.
- a film is formed in an inert gas, and in the heat treatment process, heat treatment is performed at 400 to 700 ° C. in an inert gas containing an inert gas or a reducing gas.
- a composite tungsten oxide film as an infrared reflecting film having transparency in a visible light region and having reflectivity in an infrared light region. Further, according to the present invention, such a composite tungsten oxide film is widely used industrially, is relatively harmless at the time of film formation, furthermore, the raw material used is excellent in long-term storage, and is useful for storage of dangerous substances and transportation. It can be provided in an unrestricted physical manufacturing method.
- FIG. 1 is a diagram showing the difference in optical characteristics (transmittance) between the composite tungsten oxide film of the present invention and the infrared shielding material fine particle dispersion described in Patent Document 2.
- FIG. 2 is a view showing a difference in optical characteristics (reflectance) between the composite tungsten oxide film of the present invention and the infrared ray shielding material fine particle dispersion described in Patent Document 2.
- FIG. 3 is a process diagram schematically showing a process in a method for manufacturing a composite tungsten oxide film according to one embodiment of the present invention.
- Composite Tungsten Oxide Film> A composite tungsten oxide film according to one embodiment of the present invention will be described.
- Composite tungsten oxide film according to an embodiment of the present invention have the general formula M x W y O z (however, M is selected alkali metal, alkaline earth metal, Fe, an In, Tl, from among Sn One or more elements, W is tungsten, and O is oxygen).
- the film has a composition represented by the following formula: x: y is 0.001 ⁇ x / y ⁇ 1, z: y is The configuration is in the range of 2.2 ⁇ z / y ⁇ 3.0.
- composition range Details of the composition range are shown in Patent Document 2 by the present applicant, and the main component of the composite tungsten oxide having this composition range is a film having high transparency and infrared light absorption. It is necessary to make it.
- the basic optical characteristics of the composite tungsten oxide film originate from the theoretically calculated atomic arrangement of the element M, tungsten W and oxygen O.
- one embodiment of the present invention is a composite tungsten oxide film having characteristics different from those of the infrared shield described in Patent Literature 2, and will be described in detail below while appropriately comparing with the invention according to Patent Literature 2. I do.
- the element M of the composite tungsten oxide film according to one embodiment of the present invention is at least one element selected from alkali metals, alkaline earth metals, Fe, In, Tl, and Sn, and more preferably. , Cs, Rb, K, Tl, In, Ba, Li, Na, Ca, Sr, Fe, and Sn. Although this is a range narrower than the constituent elements described in Patent Document 2, this is only an element whose effect was confirmed according to the Examples, and is not included in the present invention. However, it may have a similar function.
- the element M of the composite tungsten oxide film according to one embodiment of the present invention is more preferably one or more elements selected from Cs, Rb, K, Tl, and Ba.
- the composite tungsten film can have a crystal structure including a hexagonal crystal as described later.
- the element M may have a crystal structure other than hexagonal depending on the x / y ratio. For example, K becomes tetragonal when the ratio of x / y is 0.5 or more. Since the structure containing the hexagonal phase has higher reflection in the infrared region, it can reflect efficiently.
- Composite tungsten oxide film according to an embodiment of the present invention are the compounds of formula M x W y O z, the atomic ratio x / y of the element M and W (tungsten) is at 0.001 ⁇ x / y ⁇ 1 Yes, the atomic ratio z / y between O (oxygen) and W (tungsten) satisfies 2.2 ⁇ z / y ⁇ 3.0.
- x / y is less than 0.001, a sufficient amount of free electrons is not generated, and an infrared shielding effect cannot be obtained. If x / y exceeds 1, an impurity phase is formed in the composite tungsten oxide film.
- the composite tungsten oxide film according to one embodiment of the present invention does not substantially include an organic component.
- a dispersant or a medium resin as disclosed in Patent Documents 2 and 3 is used.
- surfactants or solvents there is no need to use surfactants or solvents.
- substantially not containing an organic component means that it does not contain an organic component that is intentionally added, such as a polymer dispersant, in the process of producing the film.
- Patent Document 3 describes a method for producing a transparent conductive film using a composite tungsten oxide in paragraph 0060.
- the transparent conductive film disclosed in Patent Document 3 is coated with a solution containing a composite tungsten compound as a starting tungsten raw material solution on a substrate, and then coated with an inert gas, an inert gas and a reducing gas, or an atmosphere of a reducing gas. It has been shown that it can be obtained by heat treatment in a medium.
- a surfactant having a polysiloxane skeleton containing an organic component is added to an aqueous solution of ammonium metatungstate and an aqueous solution of chloride of element M to form a solution.
- a film composed of a fine particle dispersion containing composite tungsten oxide fine particles of Patent Document 2 absorbs light, particularly in a near infrared region. It has been shown that the absorption in the above serves as an excellent heat ray shielding film.
- FIGS. 1 and 2 are diagrams showing a difference in optical characteristics between the composite tungsten oxide film of the present invention and the infrared ray shielding material fine particle dispersion described in Patent Document 2.
- FIG. FIG. 4 is a diagram showing the reflectance.
- the composite tungsten oxide film according to one embodiment of the present invention has optical characteristics different from those of the film made of a fine particle dispersion (fine particle dispersed film) according to Patent Document 2.
- the composite tungsten oxide film according to the present invention largely reflects light in the infrared region of 1400 nm or less. The reason for this is presumed to be the difference between the fine particle dispersed film and the continuous film, as described later, but the details have not yet been determined.
- the composite tungsten oxide film according to one embodiment of the present invention has a transmittance of 50% or more at a wavelength of 550 nm, a transmittance of 30% or less at a wavelength of 1400 nm, and a reflectance of 35% or more at a wavelength of 1400 nm.
- a rear window is preferably black or dark gray from the viewpoint of privacy protection, and a pigment or the like may be intentionally used together with the heat ray shielding material.
- the transparency index of the present invention indicates the film properties in a state where the above-mentioned intentional pigments and the like are not included. If the index of transparency is lower than the above-mentioned value, lighting becomes poor, which leads to, for example, darkening of an indoor space or making it difficult to see an external scenery.
- the transmittance at a wavelength of 1400 nm and the reflectance at a wavelength of 1400 nm which are used as indices of the light shielding performance and the reflection performance, may be configured not to satisfy the above-mentioned values.
- the reflection of the present invention since the reflection of the present invention is reflection by free electrons, it reflects light below the plasma frequency. In other words, light having a wavelength equal to or greater than the wavelength corresponding to the plasma frequency is reflected. That is, when the reflectance at a wavelength of 1400 nm is low, the reflectance of far-infrared rays having a longer wavelength is also low, the heat insulation property is low, and the effect of confining heat such as indoor heating is low. In order to obtain effective heat insulating properties, the reflectance at a wavelength of 1400 nm needs to be 35% or more.
- the surface roughness Sa of the composite tungsten oxide film according to one embodiment of the present invention is 20 nm or less.
- optical thin film design when laminating films, the reflection of a specific wavelength is strengthened or weakened by using interference to obtain a steep transmission profile (adjustment of the color of the film) or reflection in the visible light region. Can be used for prevention.
- the influence of the surface roughness is that the above optical thin film design (in the case of laminating the films) has a small surface roughness, so that a stable laminated film with little disturbance of the optical path length is possible.
- the composite tungsten oxide film according to one embodiment of the present invention is a film formed by a physical method obtained by film formation by a sputtering method or the like as described later, the surface roughness Sa of the film should be 20 nm or less. Can be. If it is 20 nm or less, there is a low possibility that a problem in designing the optical thin film will occur. When the surface roughness exceeds 20 nm, a uniform lamination state is not obtained, and it is difficult to obtain the effect of optical thin film design (lamination).
- the composite tungsten oxide film according to one embodiment of the present invention is preferably formed with a thickness exceeding 20 nm.
- the composite tungsten oxide film according to one embodiment of the present invention is a film formed by a physical method obtained by film formation by a sputtering method or the like, as described later, for example, heat-treated after applying a solution described in Patent Document 3.
- components such as a solvent and a resin, which are indispensable for the film formation, are formed by volatilization, so that a residual stress is generated in the film.
- defects such as residual volatile components and voids may be present.
- the composite tungsten oxide film according to one embodiment of the present invention is formed without containing a volatile component, the residual stress of the film accompanying the film formation can be reduced, and the residual volatile component and voids can be reduced. No defects occur. For this reason, a film without cracks or peeling can be formed.
- the film thickness is 20 nm or less, sufficient reflection performance in the infrared region cannot be obtained, and the infrared transmittance at 1400 nm exceeds 30%.
- the thickness exceeds the above film thickness.
- the transmittance in the visible light region at a wavelength of 550 nm is less than 50%, so that the visible light transmittance may be deteriorated, or the film may be peeled off due to the residual stress during film formation. .
- the transmittance of the film can be measured using a spectrophotometer.
- the composite tungsten oxide film according to one embodiment of the present invention has a sheet resistance of less than 1.0 ⁇ 10 5 ⁇ / ⁇ (read as ohm-per-square), more preferably 1.0 ⁇ 10 3 ⁇ / ⁇ . Is less than.
- the sheet resistance can be adjusted by film formation conditions and heat treatment conditions described later. The sheet resistance can be measured using, for example, a resistivity meter.
- the composite tungsten oxide film according to one embodiment of the present invention is usually formed as a continuous film, but has a form in which reflection is controlled by patterning, and a form in which irregularities are provided to provide a lens function.
- the shape of the film, the shape of the unevenness, and the like may be any shape as long as it has the features of the present invention.
- the composite tungsten oxide according to one embodiment of the present invention preferably has a hexagonal crystal structure.
- the inclusion of the hexagonal crystal structure can be known by analyzing the film by X-ray diffraction.
- the composite tungsten oxide is known to have a crystal structure such as hexagonal, cubic, tetragonal, and orthorhombic, and an amorphous structure, but the composite tungsten oxide film according to one embodiment of the present invention has a hexagonal crystal structure.
- a crystal structure other than hexagonal such as cubic, tetragonal, orthorhombic, or an amorphous structure.
- the ratio c / a of the a-axis length to the c-axis length of the hexagonal crystal obtained by X-ray diffraction using CuK ⁇ ray is 1.018 to 1.029. It is preferable that According to the ICDD reference code 01-081-1244 of the crystal structure database, c / a is 1.028. It is considered that when the number of atoms becomes excessive or insufficient compared with the standard hexagonal structure, the a-axis length and the c-axis length change.
- the diffraction intensity I (002) of the hexagonal (002) plane and the diffraction intensity of the hexagonal (200) plane by X-ray diffraction using CuK ⁇ rays When the intensity ratio of I (200) is I (002) / I (200), it is preferable that I (002) / I (200) be 0.30 or more and 0.50 or less. Since the relative intensity of the (002) plane to the (200) plane is described as 26.2% in the above-described ICDD reference code 01-081-1244, the standard intensity ratio I (002) / I (200) Is 0.26.
- the intensity ratio of the composite tungsten oxide film produced by the coating and firing method is this standard value, but the intensity ratio of the present invention is 0.30 or more and 0.50 or less. Since the intensity ratio is larger than the standard intensity ratio, it is considered that the growth of the hexagonal a and b planes is suppressed and the c-plane orientation tends to occur. If the above-mentioned c / a deviates from 1.018 to 1.029 and the intensity ratio I (002) / I (200) deviates from 0.30 or more to 0.50 or less, the heat ray reflection function decreases.
- the crystal structure is trigonal.
- the ratio c / a between the a-axis length and the c-axis length of the hexagonal crystal is the a-axis length and the c-axis length of the trigonal crystal. It is calculated by the ratio 2c / a.
- the composite tungsten oxide film has characteristics different from those of the composite tungsten oxide films described in Patent Literature 2 and Patent Literature 3, and exhibits transparency in a visible light region.
- a composite tungsten oxide film as an infrared reflecting film having reflectivity in the infrared light region.
- FIG. 3 is a process diagram schematically showing a method for manufacturing a composite tungsten oxide film according to one embodiment of the present invention.
- One embodiment of the present invention is a method for producing a composite tungsten oxide film containing the element M, tungsten W, and oxygen O as main components, and a film forming step S1 for forming a film using a physical film forming method. And a heat treatment step S2 for heat treating the film.
- each step will be described in detail.
- a film is formed using a physical film forming method.
- the physical film forming method of the composite tungsten oxide film according to one embodiment of the present invention include a vacuum deposition method, a sputtering method, an ion plating method, and an ion beam method.
- the sputtering method has a large energy of a film-forming particle, a strong adhesive force, a dense film and a strong film quality, a stable film-forming process, and high-precision control of the film quality and the film thickness.
- the sputtering method has the advantages that films of high melting point metals, alloys and compounds can be formed, oxides and nitrides can be formed by introducing a reactive gas, and composition adjustment is relatively easy. It is preferable because it is widely used in a wide range of fields, such as electronic devices such as liquid crystal display elements and hard disks, and general-purpose products such as wind films and mirrors, and has many manufacturing devices.
- the sputtering target for forming the composite tungsten oxide film represented by the general formula M x W y O z is, for example, a sputtering target including the element M and the element W, and a sputtering target including the element M and the compound of the element W and the element O.
- a sputtering target formed in advance as a compound phase is used. If the sputtering target is formed as a compound phase in advance, the dependence of the film composition on the difference in vapor pressure of each element can be reduced, and stable film formation can be achieved.
- the sputtering target may be used in the form of, for example, a compact formed by compacting powder composed of particles of the sputtering target composition or a sintered body formed by sintering the sputtering target composition.
- the sputtering target since the sputtering target is formed of a compact or a sintered body as described above, it does not substantially include an organic component, and a film formed using the target does not substantially include an organic component. .
- substantially not contained means that it does not contain intentionally added components such as a polymer dispersant.
- the sputtering target is a conductor having a specific resistance of, for example, 1 ⁇ ⁇ cm or less, a DC sputtering apparatus with high productivity can be used. Further, when the sputtering target is a sintered body having a relative density of 70% or more, for example, cracks due to vibration during transportation are reduced, and it is not necessary to take extreme care in handling such as mounting to an apparatus. It is a form suitable for general production.
- the atmosphere in the film forming step is variously selected, but preferably in an inert gas atmosphere.
- the inert gas for example, a rare gas such as a helium gas or an argon gas, a nitrogen gas, or the like may be used.
- a nitrogen gas a nitride may be formed depending on the selected element M.
- Argon gas which is used and easily available is more preferable.
- the purity of the gas used is preferably 99% or more, and the mixing of oxidizing gas such as oxygen is preferably less than 1%.
- a composite tungsten oxide film having a high reflectance can be obtained by forming a film in an inert atmosphere and performing a heat treatment under the conditions described later.
- the ratio of the oxidizing gas exceeds 1%, the reflectance of the composite tungsten oxide film after the heat treatment decreases.
- the film after film formation is usually amorphous, a diffraction peak based on crystals may appear when subjected to X-ray diffraction analysis.
- a heat treatment step S2 the film obtained in the film formation step S1 is heat-treated.
- the heat treatment step S2 is performed in an inert or reducing atmosphere.
- the heat treatment temperature is preferably 400 to 700 ° C. If the heat treatment temperature is lower than 400 ° C., the film remains amorphous and does not crystallize, or even when crystallized, the hexagonal diffraction peak in X-ray diffraction is extremely weak, and the heat shielding properties in the infrared region are low. Further, even if the heat treatment temperature is higher than 700 ° C., the characteristics of the film of the present invention can be obtained. However, practically, the film reacts with the substrate, the film peels off from the substrate, and the surface roughness increases. Will occur.
- the heat treatment time may be sufficient to complete the crystallization of the composite tungsten oxide, and depends on the balance between the heat conduction of the base material and the productivity. It may be adjusted appropriately in about a minute.
- the heat treatment is performed in an inert atmosphere or a reducing atmosphere.
- the inert atmosphere include nitrogen and argon
- examples of the reducing atmosphere include a mixed gas of nitrogen and hydrogen and a mixed gas of argon and hydrogen.
- a composite tungsten oxide film having the above-described characteristics is widely used industrially and is relatively harmless during film formation.
- the raw material can be provided by a physical production method that is excellent in long-term storage of the raw material and has no restrictions during transportation.
- a film-forming substrate according to one embodiment of the present invention is one in which the above-described composite tungsten oxide film is formed on at least one surface of a film-forming substrate.
- the substrate on which the film is to be formed is not particularly limited as long as the composite tungsten oxide film according to one embodiment of the present invention can be formed.
- the substrate on which the film is to be formed is preferably a substrate having a softening point or heat deformation temperature of 400 ° C. or higher.
- a substrate having a softening point or a heat deformation temperature of less than 400 ° C. is used, problems such as peeling of the film from the substrate on which the film is to be formed and cracking of the film occur during the heat treatment.
- the thermal expansion coefficient of the film-forming substrate is closer to the thermal expansion coefficient of the film.
- a base material that melts at 400 ° C. or lower may be used.
- Examples of the base material having a softening point or heat distortion temperature of 400 ° C. or higher include glass, ceramics, and single crystals.
- the substrate on which the film is to be formed is not necessarily required to be transparent. However, when the composite tungsten oxide film of the present invention is used together with the substrate, a transparent substrate is required.
- Examples of the transparent substrate include glass, transparent ceramics such as YAG and Y 2 O 3, and single crystals such as sapphire. Above all, it is preferable to use a glass having a softening point of 400 ° C. or higher as a substrate on which a film is to be formed, from the viewpoints of easy availability, low cost, weather resistance, chemical resistance and the like.
- the substrate is not limited to a flat surface but may have a curved surface or an uneven surface without deteriorating the features of the present invention.
- the film-forming substrate has transparency in the visible light region, and has an infrared reflective film having reflectivity in the infrared light region. be able to.
- An article according to one embodiment of the present invention has one or more of the above-described composite tungsten oxide film and / or film-forming substrate.
- the article according to one embodiment of the present invention may be any article as long as the composite tungsten oxide film has a function of reflecting light.
- the composite tungsten oxide film and / or the film-forming substrate of the present invention is used together with, for example, a film or a particle having another function, the composite tungsten oxide film and / or the film-forming substrate is included in an article utilizing the function described in the present invention. .
- the composite tungsten oxide film of the present invention is an infrared reflective film having reflectivity in an infrared light region.
- the article having a function of reflecting and shielding light include heat-insulating glass.
- the heat insulating and insulating glass has a feature of shielding and insulating heat while being transparent, and reduces a rise in indoor temperature and a rise in vehicle temperature due to sunlight in summer. In addition, the heat of the heating in winter can be reflected and kept indoors.
- a composite tungsten oxide film having transparency in the visible light region and having reflectivity in the infrared light region, and the formation of such a film.
- the article can be provided with a substrate.
- Example 1 In Example 1, a cesium tungsten oxide powder having a Cs / W atomic ratio of 0.33 (YM-01 manufactured by Sumitomo Metal Mining Co., Ltd.) was charged into a hot press apparatus, and a vacuum atmosphere, a temperature of 950 ° C., and a pressing pressure of 250 kgf / It was sintered under the condition of cm 2 to produce a cesium tungsten oxide sintered body. As a result of chemical analysis of the sintered body composition, Cs / W was 0.33.
- This oxide sintered body was ground by machining to a diameter of 153 mm and a thickness of 5 mm, and joined to a stainless steel backing plate using a metal indium brazing material, to produce a cesium tungsten oxide sputtering target.
- this sputtering target was attached to a DC sputtering apparatus (SBH2306 manufactured by ULVAC, Inc.), the ultimate vacuum was 5 ⁇ 10 ⁇ 3 Pa or less, the atmosphere during film formation was an argon gas atmosphere, and the gas pressure was 0.6 Pa.
- a cesium tungsten oxide film was formed on a glass substrate (EXG manufactured by Corning, thickness 0.7 mm). The film thickness after film formation was 100 nm (film formation step S1).
- the structure of the film after film formation was examined using an X-ray diffractometer (X'Pert-PRO (manufactured by PANalytical).)
- the film after film formation was an amorphous film having no diffraction peak derived from the crystal structure. It was a structure.
- the crystal structure, the X-ray diffraction intensity ratio, and the ratio c / a between the a-axis and the c-axis were examined using an X-ray diffractometer (X'Pert-PRO, manufactured by PANalytical).
- the transmittance and the reflectance were measured using a spectrophotometer (manufactured by Hitachi, model number V-670).
- the crystal structure of the film after heat treatment was a structure containing hexagonal crystals.
- the X-ray diffraction intensity ratio was 0.401, and the ratio c / a between the a-axis and the c-axis was 1.028.
- the transmittance at a wavelength of 550 nm was 71.3%, the transmittance at a wavelength of 1400 nm was 11.3%, and the reflectance at a wavelength of 1400 nm was 44.5%.
- the sheet resistance of the film after the heat treatment was 3.0 ⁇ 10 3 ⁇ / ⁇ as a result of measurement using a resistivity meter (manufactured by Mitsubishi Chemical Corporation, Loresta), and the film after the heat treatment had high conductivity and low resistance. (The resistance was measured using Mitsubishi Chemical Loresta or Hiresta according to the resistivity).
- Examples 2 to 17 and Comparative Examples 1 to 13 Using the same apparatus as in Example 1, the composite tungsten oxide film was changed by changing the element M, the composition ratio, the film thickness, the film formation atmosphere, the heat treatment atmosphere, the temperature, and the time as described in Tables 1 and 2. Was prepared and the characteristics of the film were examined. Tables 1 and 2 show the results of the examples together with the results of the comparative examples.
- the transmittance at a wavelength of 550 nm is 50% or more
- the transmittance at a wavelength of 1400 nm is 30% or less
- the wavelength is It was confirmed that the film had a characteristic that the reflectance at 1400 nm was 35% or more.
- the sheet resistance was less than 1.0 ⁇ 10 5 ⁇ / ⁇
- the surface roughness Sa was 20 nm or less.
- Comparative Examples 1 to 13 which are not included in the method for manufacturing a composite tungsten oxide film according to the present invention, the optical characteristics do not satisfy the above requirements, and the sheet resistance is 1.0 ⁇ 10 5 ⁇ / ⁇ . That's all.
- the composite tungsten oxide film according to the present invention has high transparency in the visible light region, excellent light reflectivity in the infrared region, and high film smoothness, it is used for a wide range of applications utilizing the function of reflecting light. Have the potential to do so.
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Abstract
Description
本発明は、複合タングステン酸化物膜及びその製造方法に関し、更には当該複合タングステン酸化物膜を有する膜形成基材や当該複合タングステン酸化物膜が有する機能を利用した物品に関する。本出願は、日本国において2018年6月20日に出願された日本特許出願番号特願2018-117340、及び、2019年2月14日に出願された日本特許出願番号特願2019-24926を基礎として優先権を主張するものであり、この出願は参照されることにより、本出願に援用される。 The present invention relates to a composite tungsten oxide film and a method for producing the same, and further relates to a film-forming substrate having the composite tungsten oxide film and an article utilizing the function of the composite tungsten oxide film. This application is based on Japanese Patent Application No. 2018-117340 filed in Japan on June 20, 2018 and Japanese Patent Application No. 2019-24926 filed on February 14, 2019. Which is incorporated herein by reference.
窓材等に使用される遮光部材として各種材料が提案されている。例えば、特許文献1には、窓材などの遮光部材として、アルミニウムなどの金属を蒸着法により形成した鏡面状態を有する膜の遮光部材が記載されている。また、銀等をスパッタリング法により形成した膜の遮光部材もある。しかしながら、これらの遮光部材を用いた場合、外観がハーフミラー状となることから、屋外で使用するには反射がまぶしく、景観上の問題がある。一方で、反射を用いた遮光部材は一般的には遠赤外線も反射し断熱性も併せ持つという特長を有する。遠赤外線を含む当該遮光部材の光の反射は自由電子の作用によりもたらされる。 各種 Various materials have been proposed as light shielding members used for window materials and the like. For example, Patent Literature 1 discloses a light-shielding member having a mirror surface state formed by vapor deposition of a metal such as aluminum as a light-shielding member such as a window material. There is also a light-shielding member of a film formed by sputtering silver or the like. However, when these light-shielding members are used, the appearance becomes a half-mirror shape, so that when used outdoors, the reflection is dazzling and there is a problem in view. On the other hand, a light-shielding member using reflection generally has a feature that it reflects far-infrared rays and also has heat insulation. The reflection of the light from the light-shielding member including far-infrared rays is caused by the action of free electrons.
これに対し本出願人は特許文献2に記載の複合タングステン酸化物微粒子を有する赤外線遮蔽微粒子分散体を提案した。複合タングステン酸化物微粒子は、太陽光線、特に近赤外線領域の光を効率よく吸収し、加えて可視光に対して高い透明性を有する。特許文献2に係る発明では、複合タングステン酸化物微粒子を、適宜な溶媒中に分散させて分散液とし、得られた分散液に媒体樹脂を添加した後、基材表面にコーティングして薄膜を形成し、非常に高い遮熱性を持つ。当該赤外線遮蔽微粒子分散体は優れた光の吸収特性を有する効果で高い遮熱性を示すが、反射特性を殆ど有さないため、断熱性はあまり期待できない。
On the other hand, the applicant has proposed an infrared shielding fine particle dispersion having composite tungsten oxide fine particles described in
特許文献3には、複合タングステン酸化物の原料化合物を含む溶液を基板に塗布後、熱処理して製造する複合タングステン酸化物膜が開示されている。ここで開示されている膜の一部は同文献の図2および図3の破線に示されるように波長1400nmにおいて30%程度の反射率を有しており、ある程度断熱性も期待される。 Patent Document 3 discloses a composite tungsten oxide film manufactured by applying a solution containing a compound compound of a composite tungsten oxide to a substrate and then heat-treating the solution. A part of the film disclosed herein has a reflectance of about 30% at a wavelength of 1400 nm as shown by broken lines in FIGS. 2 and 3 of the document, and is expected to have some heat insulating properties.
また、特許文献4には、複合タングステン酸化物の原料化合物を含む溶液を回転する基板に滴下し遠心力で成膜したのち、還元雰囲気で焼成したNaxWO3膜が開示されている。当該文献のFig.1によれば、当該膜は赤外域の光をほとんど反射しており遮蔽性と断熱性を併せ持つと思われる。 Patent Literature 4 discloses a Na x WO 3 film in which a solution containing a compound compound of a composite tungsten oxide is dropped on a rotating substrate, formed into a film by centrifugal force, and then fired in a reducing atmosphere. See FIG. According to No. 1, the film almost reflects light in the infrared region, and seems to have both a shielding property and a heat insulating property.
一方で、このような複合タングステン酸化物膜は色調の調整、反射防止などを目的に、光学設計がなされることがあるが、このとき積層される膜の膜厚は数nm~数100nmときわめて薄い。そのため、複合タングステン酸化物膜の膜厚を100nm未満で制御する必要があるが、塗布法で膜厚100nm未満の領域を制御するのは難しい。また、積層される複合タングステン酸化物膜の表面粗さは平滑性が求められ、成膜面の表面粗さが大きいと所望の光学設計の効果が得られない。特許文献3や特許文献4に記載の塗布焼成法では溶液から結晶が析出し、粒成長するというプロセス上、表面粗さが大きくなりやすい。特許文献3の記載の方法を再現し、レーザー顕微鏡で表面粗さを測定したところ算術平均高さSaで60nmを超えるものであった。 On the other hand, such a composite tungsten oxide film is sometimes optically designed for the purpose of adjusting color tone, preventing reflection, and the like. At this time, the film thickness of the laminated film is extremely several nm to several hundred nm. thin. Therefore, it is necessary to control the thickness of the composite tungsten oxide film to be less than 100 nm, but it is difficult to control a region having a thickness of less than 100 nm by a coating method. Further, the surface roughness of the laminated composite tungsten oxide film is required to be smooth, and if the surface roughness of the film formation surface is large, a desired optical design effect cannot be obtained. In the coating and baking method described in Patent Documents 3 and 4, the surface roughness tends to increase due to the process of crystal precipitation from the solution and grain growth. The method described in Patent Document 3 was reproduced, and the surface roughness was measured with a laser microscope. As a result, the arithmetic mean height Sa exceeded 60 nm.
複合タングステン酸化物薄膜を得る別の手段として、特許文献1の例に見られる蒸着法やスパッタリング法などの物理的な方法がある。物理的な成膜法の薄膜は、目的とする組成物以外の元素を除外した膜にすることができる。また、高温の処理に適さない分散剤や媒体樹脂を使用する必要がないため、例えば高温熱処理する強化ガラスの製造工程に供することができる。さらに、物理的な成膜法の薄膜は100nm未満の膜厚でも膜厚をコントロールすることが容易であり、また、算術平均粗さで数nm以下の非常に平滑な表面を作成できるため、積層構造も容易に可能である。 別 As another means for obtaining a composite tungsten oxide thin film, there is a physical method such as a vapor deposition method or a sputtering method which is disclosed in the example of Patent Document 1. The thin film formed by the physical film formation method can be a film from which elements other than the target composition are excluded. In addition, since it is not necessary to use a dispersant or a medium resin that is not suitable for high-temperature treatment, it can be provided to, for example, a tempered glass manufacturing process to be subjected to high-temperature heat treatment. Furthermore, the thickness of a thin film formed by a physical film formation method can be easily controlled even when the thickness is less than 100 nm, and a very smooth surface having an arithmetic average roughness of several nm or less can be formed. The structure is easily possible.
特許文献5には車両用窓ガラスとその製造方法が提案され、車両用窓等の大面積の基板への処理が可能な大型インライン方式のスパッタリング装置が用いられている。このような製造設備が使用可能であれば、容易に膜厚が均一で高品質で安定した膜を得られ、かつ、生産性も高い。また、物理的な成膜法の成膜源(例えば、スパッタリング法ではターゲット材料)は単一の化合物でなくても、例えば単体元素の組成物組合せや複数の化合物等から成る混合物でも構わず、組成選択の自由度が極めて広い。 Patent Document 5 proposes a window glass for a vehicle and a method for manufacturing the same, and uses a large-size in-line type sputtering apparatus capable of processing a large-area substrate such as a window for a vehicle. If such a manufacturing facility can be used, a high-quality and stable film having a uniform film thickness can be easily obtained, and the productivity is high. Further, the film formation source of the physical film formation method (for example, a target material in the case of the sputtering method) may not be a single compound, but may be, for example, a combination of a single element composition or a mixture of a plurality of compounds. The flexibility of composition selection is extremely wide.
特許文献6には、スパッタリング法により作製した複合タングステン酸化物膜が提案されている。ガラス基板上に、タングステンと周期律表のIVa族、IIIa族、VIIb族、VIb族及びVb族から成る群から選ばれた少なくとも1種の元素からなる複合タングステン酸化物膜を形成している。しかしながら、この組成の酸化物膜は赤外線透過率が40%以上と熱線遮蔽性能は十分でなく、他の透明誘電体膜との多層膜にしなければ機能を発揮できないという問題があった。 Patent Document 6 proposes a composite tungsten oxide film formed by a sputtering method. A composite tungsten oxide film made of tungsten and at least one element selected from the group consisting of group IVa, group IIIa, group VIIb, group VIb and group Vb of the periodic table is formed on a glass substrate. However, the oxide film of this composition has an infrared transmittance of 40% or more and does not have sufficient heat ray shielding performance, and has a problem that its function cannot be exhibited unless it is formed as a multilayer film with another transparent dielectric film.
上述の通り、物理的な成膜法による複合タングステン酸化物膜の熱線遮蔽性能は、まだ十分であるとは言えない状況である。一方で、塗布法により形成された膜は光を吸収して熱線を遮蔽する機能は高いが、断熱性はあまり期待できない。加えて膜の平滑性が劣る問題がある。 の 通 り As described above, the heat ray shielding performance of the composite tungsten oxide film formed by the physical film formation method is not yet sufficient. On the other hand, the film formed by the coating method has a high function of absorbing light and shielding heat rays, but cannot expect much heat insulation. In addition, there is a problem that the smoothness of the film is poor.
そこで、本発明は、このような状況を解決するためになされたものであり、可視光域における透明性を保持しつつ、赤外光を反射して遮蔽する機能、すなわち断熱による熱線遮蔽機能に加え、膜の平滑性が高い複合タングステン膜とその製造方法を提供し、更にはこれら機能を利用した膜形成基材又は物品を提供する。 Thus, the present invention has been made to solve such a situation, and has a function of reflecting and shielding infrared light, that is, a function of shielding heat rays by heat insulation, while maintaining transparency in a visible light region. In addition, the present invention provides a composite tungsten film having high film smoothness and a method for producing the same, and further provides a film-forming substrate or an article utilizing these functions.
本発明者らは、上述した課題に対して、複合タングステン酸化物膜について鋭意研究し、物理的な成膜法によれば、成膜時の条件を最適化することで優れた可視光透過性を保持しつつ、赤外線を反射して断熱する機能を発揮し、加えて極めて平滑な膜を有する複合タングステン膜を得るに至った。 The present inventors have intensively studied a composite tungsten oxide film with respect to the above-mentioned problems, and according to a physical film forming method, have excellent visible light transmittance by optimizing conditions at the time of film formation. While exhibiting the function of reflecting infrared rays to insulate heat while maintaining the above, and in addition, a composite tungsten film having an extremely smooth film was obtained.
すなわち、本発明の一態様は、一般式MxWyOz(ただし、Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素、Wはタングステン、Oは酸素)で表される組成を主成分とする複合タングステン酸化物膜であって、0.001≦x/y≦1、2.2≦z/y≦3.0であり、有機物成分を実質的に含まず、波長550nmにおける透過率が50%以上、波長1400nmにおける透過率が30%以下、かつ、波長1400nmにおける反射率が35%以上である。 That is, one embodiment of the present invention provides a compound represented by the general formula M x W y O z (where M is one or more elements selected from alkali metals, alkaline earth metals, Fe, In, Tl, and Sn; (W is tungsten, O is oxygen) is a composite tungsten oxide film having a composition represented by the following formula: 0.001 ≦ x / y ≦ 1, 2.2 ≦ z / y ≦ 3.0 It contains substantially no organic components, has a transmittance of 50% or more at a wavelength of 550 nm, a transmittance of 30% or less at a wavelength of 1400 nm, and a reflectance of 35% or more at a wavelength of 1400 nm.
本発明の一態様によれば、可視光域における透明性を保持しつつ、赤外光を反射して遮蔽する機能、すなわち断熱による熱線遮蔽機能を有する複合タングステン酸化物膜となる。 According to one embodiment of the present invention, a composite tungsten oxide film having a function of reflecting and shielding infrared light, that is, a function of shielding heat rays by heat insulation, while maintaining transparency in a visible light region.
このとき、本発明の一態様では、表面粗さSaが20nm以下であるとしてもよい。 At this time, in one embodiment of the present invention, the surface roughness Sa may be 20 nm or less.
上記条件を満たすことで、膜の平滑性が高い複合タングステン膜となる。 を 満 た す By satisfying the above conditions, a composite tungsten film having high film smoothness can be obtained.
また、本発明の一態様では、シート抵抗が105Ω/□未満であるとしてもよい。 In one embodiment of the present invention, the sheet resistance may be less than 10 5 Ω / □.
シート抵抗を上記範囲とすることで、より好ましい断熱性を得ることができる。 よ り By setting the sheet resistance within the above range, more preferable heat insulating properties can be obtained.
また、本発明の一態様では、複合タングステン酸化物膜はスパッタリング成膜由来であるとしてもよい。 In one embodiment of the present invention, the composite tungsten oxide film may be derived from sputtering.
スパッタリング成膜由来とすることで、組成選択の自由度が極めて広く、安定に成膜できる複合タングステン酸化物膜とすることができる。また、スパッタリング成膜により、極めて平滑な膜が得られるため、光学設計された積層構造の効果を高めることができる。 (4) By being derived from sputtering film formation, the degree of freedom in selecting a composition is extremely wide, and a composite tungsten oxide film that can be stably formed can be obtained. Further, since an extremely smooth film can be obtained by sputtering, the effect of the optically designed laminated structure can be enhanced.
また、本発明の一態様では、Mは、Cs、Rb、K、Tl、In、Ba、Li、Na、Ca、Sr、Fe、およびSnの内から選択される1種以上の元素であるとしてもよい。 In one embodiment of the present invention, M is at least one element selected from Cs, Rb, K, Tl, In, Ba, Li, Na, Ca, Sr, Fe, and Sn. Is also good.
Mを上記元素から選択することで、より高い赤外線を反射して遮蔽する機能に加え膜の平滑性が高い複合タングステン酸化物膜とすることができる。 By selecting M from the above elements, a composite tungsten oxide film having high smoothness as well as a function of reflecting and blocking higher infrared rays can be obtained.
また、本発明の一態様では、複合タングステン酸化物膜は、六方晶の結晶構造を含むものとしてもよい。 In one embodiment of the present invention, the composite tungsten oxide film may have a hexagonal crystal structure.
六方晶相は赤外域の反射がより大きいため、効率良く反射することができる。 Since the hexagonal phase has a greater reflection in the infrared region, it can be efficiently reflected.
このとき、本発明の一態様は、CuKα線を使用したX線回折による六方晶(002)面の回折強度I(002)と、六方晶(200)面の回折強度I(200)の強度比をI(002)/I(200)としたとき、I(002)/I(200)は0.30以上0.50以下であり、CuKα線を使用したX線回折による六方晶のa軸とc軸との比c/aが1.018~1.029であるとしてもよい。 At this time, one embodiment of the present invention provides an intensity ratio of the diffraction intensity I (002) of the hexagonal (002) plane to the diffraction intensity I (200) of the hexagonal (200) plane by X-ray diffraction using CuKα radiation. Is I (002) / I (200), I (002) / I (200) is 0.30 or more and 0.50 or less, and the a-axis of hexagonal crystal by X-ray diffraction using CuKα ray is The ratio c / a to the c-axis may be 1.018 to 1.029.
X線回折分析による上記要件を満たす複合タングステン酸化物膜は、優れた可視光透過性を保持しつつ、赤外線を反射して断熱する機能を発揮する複合タングステン酸化物膜となる。 複合 A composite tungsten oxide film that satisfies the above requirements by X-ray diffraction analysis is a composite tungsten oxide film that functions to reflect infrared rays and to insulate heat while maintaining excellent visible light transmittance.
また、本発明の一態様は、一般式MxWyOz(ただし、Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素、Wはタングステン、Oは酸素)で表される組成を主成分とする複合タングステン酸化物膜であって、0.001≦x/y≦1、2.2≦z/y≦3.0であり、当該複合タングステン酸化物膜は、六方晶の結晶構造を含み、CuKα線を使用したX線回折による六方晶(002)面の回折強度I(002)と、六方晶(200)面の回折強度I(200)の強度比をI(002)/I(200)としたとき、I(002)/I(200)は0.30以上0.50以下であり、CuKα線を使用したX線回折による六方晶のa軸とc軸との比c/aが1.018~1.029である。 Further, one embodiment of the present invention provides a compound represented by the general formula M x W y O z (where M is one or more elements selected from an alkali metal, an alkaline earth metal, Fe, In, Tl, and Sn; (W is tungsten, O is oxygen) is a composite tungsten oxide film having a composition represented by the following formula: 0.001 ≦ x / y ≦ 1, 2.2 ≦ z / y ≦ 3.0 The composite tungsten oxide film has a hexagonal crystal structure, and has a diffraction intensity I (002) of a hexagonal (002) plane and a diffraction intensity of a hexagonal (200) plane by X-ray diffraction using CuKα radiation. When the intensity ratio of I (200) is I (002) / I (200), I (002) / I (200) is 0.30 or more and 0.50 or less, and X-ray diffraction using CuKα ray The ratio c / a between the a-axis and the c-axis of the hexagonal crystal is 1.018 to 1.029. You.
X線回折分析による上記要件を満たす複合タングステン酸化物膜は、優れた可視光透過性を保持しつつ、赤外線を反射して断熱する機能を発揮する複合タングステン酸化物膜となる。 複合 A composite tungsten oxide film that satisfies the above requirements by X-ray diffraction analysis is a composite tungsten oxide film that functions to reflect infrared rays and to insulate heat while maintaining excellent visible light transmittance.
この時、本発明の一態様では、Mは、Cs、Rb、K、Tl、Baから選択される1種類以上の元素であるとしてもよい。 At this time, in one embodiment of the present invention, M may be one or more elements selected from Cs, Rb, K, Tl, and Ba.
Mを上記元素から選択することで、より高い赤外線を反射して遮蔽する機能を有する複合タングステン酸化物膜とすることができる。 By selecting M from the above elements, a composite tungsten oxide film having a function of reflecting and blocking higher infrared rays can be obtained.
また、本発明の一態様では、複合タングステン酸化物膜は、20nmより厚い膜厚を有することができる。 In one embodiment of the present invention, the composite tungsten oxide film can have a thickness greater than 20 nm.
このような膜厚とすることにより、高い赤外線反射機能を有する複合タングステン酸化物膜とすることができる。 に よ り With such a film thickness, a composite tungsten oxide film having a high infrared reflection function can be obtained.
本発明の他の態様は、上述した複合タングステン酸化物膜が被成膜基材の少なくとも一方の面に形成されている膜形成基材である。 の 他 Another embodiment of the present invention is a film-forming substrate having the above-described composite tungsten oxide film formed on at least one surface of a substrate on which a film is to be formed.
上述した複合タングステン酸化物膜が形成された膜形成基材とすることで、機械特性や加工性等の実用に供する形態とすることができる。 こ と By using the film-forming substrate on which the above-described composite tungsten oxide film is formed, it is possible to provide a practical form such as mechanical properties and workability.
このとき、本発明の他の態様では、被成膜基材が400℃以上の軟化点もしくは熱変形温度を有するようにしてもよい。 At this time, in another embodiment of the present invention, the substrate on which the film is to be formed may have a softening point or a heat distortion temperature of 400 ° C. or higher.
このような特性とすることで、成膜後の熱処理で、より優れた機能を付与した膜形成基材とすることができる。 こ と With such characteristics, a film-forming substrate having more excellent functions can be obtained by heat treatment after film formation.
また、本発明の他の態様では、被成膜基材をガラスとすることができる。 In another embodiment of the present invention, the substrate on which the film is to be formed can be glass.
被成膜基材をガラスとすることで、車両用窓や建築用窓のガラス窓、ガラス繊維、太陽光発電用ガラス、ディスプレイ用ガラス、レンズや鏡用ガラス、半導体やMEMS等で用いられているガラス基板等、幅広い分野で使用されるガラスを用いた機材に赤外線遮蔽機能を付与することができる。 By using glass as the base material for film formation, it is used in glass windows for vehicle windows and architectural windows, glass fibers, glass for solar power generation, glass for displays, glass for lenses and mirrors, semiconductors and MEMS, and the like. Equipment using glass used in a wide range of fields, such as glass substrates, can be provided with an infrared shielding function.
また、本発明の他の態様は、上述した複合タングステン酸化物膜及び/又は膜形成基材を1又は複数有することを特徴とする物品である。 Another aspect of the present invention is an article having one or more of the composite tungsten oxide film and / or the film-forming substrate described above.
本発明の他の態様によれば、エネルギー削減や製造時の環境負荷の小さい物品を大量に安価で様々な用途で提供することができる。 According to another aspect of the present invention, it is possible to provide a large quantity of low-cost and low-environmental articles at the time of energy reduction and manufacturing for various uses.
さらに、本発明の他の態様は、複合タングステン酸化物膜の製造方法であって、物理的な成膜法により膜を形成する成膜工程と、膜を熱処理する熱処理工程とを有し、成膜工程では不活性ガス中で成膜をし、かつ、熱処理工程では不活性ガス又は還元性ガスを含む不活性ガス中で400~700℃で熱処理する。 Further, another aspect of the present invention is a method for producing a composite tungsten oxide film, comprising a film forming step of forming a film by a physical film forming method, and a heat treatment step of heat treating the film. In the film process, a film is formed in an inert gas, and in the heat treatment process, heat treatment is performed at 400 to 700 ° C. in an inert gas containing an inert gas or a reducing gas.
このような製造方法によれば、既存の汎用的な製造設備で容易に均一な厚さの高品質な前記特徴を有する複合タングステン酸化物膜を安定に高い生産性で製造することができる。 According to such a manufacturing method, it is possible to easily and stably produce a high-quality composite tungsten oxide film having the above-mentioned characteristics with a uniform thickness using existing general-purpose manufacturing equipment.
本発明によれば、可視光域における透明性を有し、赤外光域における反射性を併せ持った赤外線反射膜としての複合タングステン酸化物膜を得ることができる。また、本発明によれば、このような複合タングステン酸化物膜を工業的に広く利用され、成膜時に比較的無害な方法で、さらに使用原料が長期保存に優れ、危険物保管や輸送時の制限を受けない、物理的な製造方法で提供することができる。 According to the present invention, it is possible to obtain a composite tungsten oxide film as an infrared reflecting film having transparency in a visible light region and having reflectivity in an infrared light region. Further, according to the present invention, such a composite tungsten oxide film is widely used industrially, is relatively harmless at the time of film formation, furthermore, the raw material used is excellent in long-term storage, and is useful for storage of dangerous substances and transportation. It can be provided in an unrestricted physical manufacturing method.
以下、本発明に係る複合タングステン酸化物膜とその製造方法について以下の順序で説明する。なお、本発明は以下の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で、任意に変更可能である。
1.複合タングステン酸化物膜
2.複合タングステン酸化物膜の製造方法
2-1.成膜工程
2-2.熱処理工程
3.膜形成基材
4.物品
Hereinafter, the composite tungsten oxide film and the method of manufacturing the same according to the present invention will be described in the following order. The present invention is not limited to the following examples, and can be arbitrarily changed without departing from the gist of the present invention.
1. 1. Composite
<1.複合タングステン酸化物膜>
本発明の一実施形態に係る複合タングステン酸化物膜について説明する。本発明の一実施形態に係る複合タングステン酸化物膜は、一般式MxWyOz(ただし、Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素、Wはタングステン、Oは酸素)で表される組成を主成分とする膜であり、xとyの比が0.001≦x/y≦1、zとyの比が2.2≦z/y≦3.0の範囲の構成である。
<1. Composite Tungsten Oxide Film>
A composite tungsten oxide film according to one embodiment of the present invention will be described. Composite tungsten oxide film according to an embodiment of the present invention have the general formula M x W y O z (however, M is selected alkali metal, alkaline earth metal, Fe, an In, Tl, from among Sn One or more elements, W is tungsten, and O is oxygen). The film has a composition represented by the following formula: x: y is 0.001 ≦ x / y ≦ 1, z: y is The configuration is in the range of 2.2 ≦ z / y ≦ 3.0.
組成範囲の詳細については、本出願人による特許文献2に詳細が示されており、この組成範囲の複合タングステン酸化物を主成分とすることが、高い透明性と赤外光吸収性を有する膜とするためには必要である。複合タングステン酸化物膜が有する基本的な光学特性は、理論的に算出された、元素Mと、タングステンWおよび酸素Oの原子配置に由来する。一方で、本発明の一実施形態は、特許文献2に記載の赤外線遮蔽体とは異なる特性を有する複合タングステン酸化物膜であり、以下、特許文献2に係る発明と適宜対比しながら詳細に説明する。
Details of the composition range are shown in
本発明の一実施形態に係る複合タングステン酸化物膜の元素Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素であり、より好ましくは、Cs、Rb、K、Tl、In、Ba、Li、Na、Ca、Sr、Fe、およびSnの内から選択される1種以上の元素である。これは、特許文献2に記載の構成元素よりも狭い範囲としているが、これは実施例に依り効果が確認できた元素を示すに過ぎず、本発明に含まれない特許文献2に記載の元素でも少なからず同様の機能を有する可能性はある。
The element M of the composite tungsten oxide film according to one embodiment of the present invention is at least one element selected from alkali metals, alkaline earth metals, Fe, In, Tl, and Sn, and more preferably. , Cs, Rb, K, Tl, In, Ba, Li, Na, Ca, Sr, Fe, and Sn. Although this is a range narrower than the constituent elements described in
本発明の一実施形態に係る複合タングステン酸化物膜の元素Mは、Cs、Rb、K、Tl、Baから選択される1種類以上の元素であることがさらに好ましい。元素Mを上記に選定することで複合タングステン膜は、後述するような六方晶を含む結晶構造となり得る。なお、上記元素Mは、x/yの比率によっては六方晶以外の結晶構造となることもある。例えば、Kはx/yの比率が0.5以上で正方晶となる。六方晶相を含む構造は赤外域の反射がより大きいため、効率良く反射することができる。 元素 The element M of the composite tungsten oxide film according to one embodiment of the present invention is more preferably one or more elements selected from Cs, Rb, K, Tl, and Ba. By selecting the element M as described above, the composite tungsten film can have a crystal structure including a hexagonal crystal as described later. Note that the element M may have a crystal structure other than hexagonal depending on the x / y ratio. For example, K becomes tetragonal when the ratio of x / y is 0.5 or more. Since the structure containing the hexagonal phase has higher reflection in the infrared region, it can reflect efficiently.
本発明の一実施形態に係る複合タングステン酸化物膜は、一般式MxWyOzにおいて、元素MとW(タングステン)の原子数比x/yが0.001≦x/y≦1であり、O(酸素)とW(タングステン)の原子数比z/yが2.2≦z/y≦3.0である。x/yが0.001未満であると十分な量の自由電子が生成されず赤外線遮蔽効果を得ることができない。また、x/yが1を超えると複合タングステン酸化物膜中に不純物相が形成されてしまう。z/yが2.2未満であると、複合タングステン酸化物膜中に目的以外であるWO2の結晶相が現れてしまう。また、z/yが3.0を超えると赤外線遮蔽効果を得るための自由電子が生成されなくなってしまう。 Composite tungsten oxide film according to an embodiment of the present invention are the compounds of formula M x W y O z, the atomic ratio x / y of the element M and W (tungsten) is at 0.001 ≦ x / y ≦ 1 Yes, the atomic ratio z / y between O (oxygen) and W (tungsten) satisfies 2.2 ≦ z / y ≦ 3.0. When x / y is less than 0.001, a sufficient amount of free electrons is not generated, and an infrared shielding effect cannot be obtained. If x / y exceeds 1, an impurity phase is formed in the composite tungsten oxide film. If z / y is less than 2.2, a non-target WO 2 crystal phase appears in the composite tungsten oxide film. On the other hand, when z / y exceeds 3.0, free electrons for obtaining an infrared ray shielding effect are not generated.
本発明の一実施形態に係る複合タングステン酸化物膜は、有機物成分を実質的に含まない。後述するように、本発明の一実施形態に係る複合タングステン酸化物膜は、物理的な成膜法により形成されるため、特許文献2や特許文献3に係る発明のように分散剤や媒体樹脂、あるいは界面活性剤や溶媒を使用する必要がない。ここで、有機物成分を実質的に含まないとは、膜の製造過程において、例えば高分子分散剤等、意図的に添加される有機物成分を含んでいないことを指す。
複合 The composite tungsten oxide film according to one embodiment of the present invention does not substantially include an organic component. As described later, since the composite tungsten oxide film according to one embodiment of the present invention is formed by a physical film forming method, a dispersant or a medium resin as disclosed in
特許文献3には段落0060に複合タングステン酸化物を用いた透明導電膜の製造方法が記されている。これによれば、特許文献3の透明導電膜は複合タングステン化合物を含む溶液を出発タングステン原料溶液として基材に塗布後に不活性ガス、不活性ガスと還元性ガス、還元性ガスのいずれかの雰囲気中で熱処理して得られることが示されている。この方法によれば、メタタングステン酸アンモニウム水溶液とM元素の塩化物水溶液に有機成分を含有するポリシロキサン骨格を有する界面活性剤を添加して溶液としている。 Patent Document 3 describes a method for producing a transparent conductive film using a composite tungsten oxide in paragraph 0060. According to this, the transparent conductive film disclosed in Patent Document 3 is coated with a solution containing a composite tungsten compound as a starting tungsten raw material solution on a substrate, and then coated with an inert gas, an inert gas and a reducing gas, or an atmosphere of a reducing gas. It has been shown that it can be obtained by heat treatment in a medium. According to this method, a surfactant having a polysiloxane skeleton containing an organic component is added to an aqueous solution of ammonium metatungstate and an aqueous solution of chloride of element M to form a solution.
特許文献3の記載の方法を再現し、レーザー顕微鏡で表面粗さを測定したところ算術平均高さSaで60nmを超えるものであった。一方で、本発明の一実施形態に係る複合タングステン酸化物膜は後述するように、スパッタリング法などの物理的な成膜法により形成されるため、表面粗さSaを20nm以下とすることができる。このように、本発明の一実施形態に係る複合タングステン酸化物膜は、特許文献3の透明導電膜とは平滑性が異なる。 再現 The method described in Patent Document 3 was reproduced, and the surface roughness was measured with a laser microscope. As a result, the arithmetic mean height Sa exceeded 60 nm. On the other hand, since the composite tungsten oxide film according to one embodiment of the present invention is formed by a physical film forming method such as a sputtering method as described later, the surface roughness Sa can be set to 20 nm or less. . Thus, the smoothness of the composite tungsten oxide film according to the embodiment of the present invention is different from that of the transparent conductive film of Patent Document 3.
また、特許文献2の複合タングステン酸化物微粒子を含有する微粒子分散体から成る膜(微粒子分散膜)は、特許文献2の段落0050や段落0053に記載のように、光を吸収、特に近赤外線領域における吸収が優れた熱線遮蔽膜として機能することが示されている。
Further, as described in paragraphs 0050 and 0053 of
図1、図2は、本発明の複合タングステン酸化物膜と、特許文献2に記載の赤外線遮蔽材料微粒子分散体との光学特性の違いを示す図であり、図1は透過率について、図2は反射率について示した図である。図1、図2に示すように、本発明の一実施形態に係る複合タングステン酸化物膜は、特許文献2に係る微粒子分散体から成る膜(微粒子分散膜)とは異なる光学特性を示す。特に、本発明に係る複合タングステン酸化物膜は図2に示すように、1400nm以降の赤外領域の光を大きく反射する。この理由についても後述のように微粒子分散膜と連続膜の違いであると推測されるがその詳細は未だ判っていない。
1 and 2 are diagrams showing a difference in optical characteristics between the composite tungsten oxide film of the present invention and the infrared ray shielding material fine particle dispersion described in
本発明の一実施形態に係る複合タングステン酸化物膜は、波長550nmにおける透過率が50%以上かつ波長1400nmにおける透過率が30%以下、波長1400nmにおける反射率が35%以上の膜である。 複合 The composite tungsten oxide film according to one embodiment of the present invention has a transmittance of 50% or more at a wavelength of 550 nm, a transmittance of 30% or less at a wavelength of 1400 nm, and a reflectance of 35% or more at a wavelength of 1400 nm.
透明性の指標とした、波長550nmにおける透過率が50%より低くても用途によっては使用することができる。例えば、車用のウィンドフィルムでは、後席ウィンドはプライバシー保護の観点から黒色やダークグレーが好まれ、熱線遮蔽材料と同時に顔料などを意図的に使用することがある。 て も Even if the transmittance at a wavelength of 550 nm, which is an index of transparency, is lower than 50%, it can be used depending on the application. For example, in a window film for a car, a rear window is preferably black or dark gray from the viewpoint of privacy protection, and a pigment or the like may be intentionally used together with the heat ray shielding material.
本発明の透明性の指標は、前記のような意図的な顔料などを含まない状態での膜特性を指すものである。透明性の指標が前記値より低いと採光が悪くなり、例えば屋内が暗くなる、外部の景色が見づらくなるなどに繋がる。 透明 The transparency index of the present invention indicates the film properties in a state where the above-mentioned intentional pigments and the like are not included. If the index of transparency is lower than the above-mentioned value, lighting becomes poor, which leads to, for example, darkening of an indoor space or making it difficult to see an external scenery.
同様に、光の遮蔽性能と反射性能の指標とした、波長1400nmにおける透過率および、波長1400nmにおける反射率が前記値を満たさない構成とすることもできるが、これらの場合は、赤外光の透過が高くなり、遮熱では皮膚のジリジリ感や室温の上昇、光熱変換では発生する熱量の低下などに繋がる。 Similarly, the transmittance at a wavelength of 1400 nm and the reflectance at a wavelength of 1400 nm, which are used as indices of the light shielding performance and the reflection performance, may be configured not to satisfy the above-mentioned values. The penetration increases, and the heat shielding leads to a feeling of skin stiffness and an increase in room temperature, and the light-to-heat conversion leads to a decrease in the amount of heat generated.
また、本発明の反射は自由電子による反射であるため、プラズマ周波数以下の光を反射する。言い換えればプラズマ周波数に相当する波長以上の波長の光を反射する。つまり、波長1400nmの反射率が低いと、より波長の長い遠赤外線の反射率も低く、断熱性が低くなり、室内の暖房などの熱を閉じ込める効果が低い。有効な断熱性を得るには波長1400nmの反射率が35%以上あることが必要である。 反射 Also, since the reflection of the present invention is reflection by free electrons, it reflects light below the plasma frequency. In other words, light having a wavelength equal to or greater than the wavelength corresponding to the plasma frequency is reflected. That is, when the reflectance at a wavelength of 1400 nm is low, the reflectance of far-infrared rays having a longer wavelength is also low, the heat insulation property is low, and the effect of confining heat such as indoor heating is low. In order to obtain effective heat insulating properties, the reflectance at a wavelength of 1400 nm needs to be 35% or more.
本発明の一実施形態に係る複合酸化タングステン膜の表面粗さSaは20nm以下である。光学薄膜設計(膜を積層する場合)では、干渉を利用して特定の波長の反射を強めたり弱めたりすることで急峻な透過プロファイルにしたり(膜の色味の調整)、可視光域の反射防止に利用できる。表面粗さによる影響は、上記光学薄膜設計(膜を積層する場合)で、表面粗さが小さいので光路長の乱れが少なく安定した積層膜を可能とする。本発明の一実施形態に係る複合酸化タングステン膜は、後述するように、スパッタリング法等による成膜で得られる物理的な方法による膜であるため、膜の表面粗さSaを20nm以下とすることができる。20nm以下であれば、光学薄膜設計上の問題が生じる可能性が低い。表面粗さが20nmを超えてくると、均一な積層状態にならず、光学薄膜設計(積層)の効果が得られ難い。 表面 The surface roughness Sa of the composite tungsten oxide film according to one embodiment of the present invention is 20 nm or less. In optical thin film design (when laminating films), the reflection of a specific wavelength is strengthened or weakened by using interference to obtain a steep transmission profile (adjustment of the color of the film) or reflection in the visible light region. Can be used for prevention. The influence of the surface roughness is that the above optical thin film design (in the case of laminating the films) has a small surface roughness, so that a stable laminated film with little disturbance of the optical path length is possible. Since the composite tungsten oxide film according to one embodiment of the present invention is a film formed by a physical method obtained by film formation by a sputtering method or the like as described later, the surface roughness Sa of the film should be 20 nm or less. Can be. If it is 20 nm or less, there is a low possibility that a problem in designing the optical thin film will occur. When the surface roughness exceeds 20 nm, a uniform lamination state is not obtained, and it is difficult to obtain the effect of optical thin film design (lamination).
また、本発明の一実施形態に係る複合タングステン酸化物膜は、20nmを超える膜厚で形成されることが好ましい。本発明の一実施形態に係る複合タングステン酸化物膜は、後述するように、スパッタリング法等による成膜で得られる物理的な方法による膜で、例えば、特許文献3に記載の溶液を塗布後に熱処理して成膜した膜では、成膜に不可欠と成る溶媒や樹脂等の成分を揮発させて形成されるため、膜にはこれに伴う残留応力が生じる。加えて、揮発成分の残留やボイド等の欠陥が内在することがある。本発明の一実施形態に係る複合タングステン酸化物膜は揮発成分を含むことなく成膜されるため、成膜に伴う膜の残留応力を小さくすることができるとともに、揮発成分の残留やボイド等の欠陥が生じない。このため、クラックや剥離のない膜を形成することができる。 複合 In addition, the composite tungsten oxide film according to one embodiment of the present invention is preferably formed with a thickness exceeding 20 nm. The composite tungsten oxide film according to one embodiment of the present invention is a film formed by a physical method obtained by film formation by a sputtering method or the like, as described later, for example, heat-treated after applying a solution described in Patent Document 3. In a film formed by forming a film, components such as a solvent and a resin, which are indispensable for the film formation, are formed by volatilization, so that a residual stress is generated in the film. In addition, defects such as residual volatile components and voids may be present. Since the composite tungsten oxide film according to one embodiment of the present invention is formed without containing a volatile component, the residual stress of the film accompanying the film formation can be reduced, and the residual volatile component and voids can be reduced. No defects occur. For this reason, a film without cracks or peeling can be formed.
しかしながら、膜厚が20nm以下の場合は、赤外域での十分な反射性能が得られず、1400nmにおける赤外線透過率が30%を超えてしまう。本発明は前記膜厚を超える厚さであれば特に制限はない。しかし、膜厚が厚くなると、波長550nmにおける可視光域の透過率が50%を下回り、可視光透過性が悪くなることや、成膜時の残留応力の影響で膜の剥離が生じることがある。膜の透過率は分光光度計を用いて測定することができる。 However, when the film thickness is 20 nm or less, sufficient reflection performance in the infrared region cannot be obtained, and the infrared transmittance at 1400 nm exceeds 30%. In the present invention, there is no particular limitation as long as the thickness exceeds the above film thickness. However, when the film thickness is large, the transmittance in the visible light region at a wavelength of 550 nm is less than 50%, so that the visible light transmittance may be deteriorated, or the film may be peeled off due to the residual stress during film formation. . The transmittance of the film can be measured using a spectrophotometer.
本発明の一実施形態に係る複合タングステン酸化物膜は、シート抵抗が1.0×105Ω/□(オーム・パー・スクエアと読む)未満、より好ましくは1.0×103Ω/□未満である。膜のシート抵抗が前記値よりも高いと、自由電子による反射が弱まり、より長波長域の遠赤外線を反射できなくなるため断熱性を得られない。シート抵抗は後述の成膜条件や熱処理条件で調整することができる。シート抵抗は、例えば、抵抗率計を用いて測定することができる。 The composite tungsten oxide film according to one embodiment of the present invention has a sheet resistance of less than 1.0 × 10 5 Ω / □ (read as ohm-per-square), more preferably 1.0 × 10 3 Ω / □. Is less than. When the sheet resistance of the film is higher than the above value, reflection by free electrons is weakened, and it becomes impossible to reflect far-infrared rays in a longer wavelength range, so that heat insulation cannot be obtained. The sheet resistance can be adjusted by film formation conditions and heat treatment conditions described later. The sheet resistance can be measured using, for example, a resistivity meter.
また、本発明の一実施形態に係る複合タングステン酸化物膜は、通常は連続膜として形成されるが、パターンニングを行って反射の制御を付与した形態、凹凸を設けてレンズ機能を付与した形態など膜の形状や凹凸などの形態であっても、本発明の特長を有するものであればいかなる形態でも構わない。 Further, the composite tungsten oxide film according to one embodiment of the present invention is usually formed as a continuous film, but has a form in which reflection is controlled by patterning, and a form in which irregularities are provided to provide a lens function. The shape of the film, the shape of the unevenness, and the like may be any shape as long as it has the features of the present invention.
本発明の一実施形態に係る複合タングステン酸化物は、六方晶の結晶構造を含むことが好ましい。六方晶の結晶構造を含むことは膜をX線回折分析することで知ることができる。複合タングステン酸化物は六方晶、立方晶、正方晶、斜方晶などの結晶構造、及び非晶質構造が知られているが、本発明の一実施形態に係る複合タングステン酸化物膜は六方晶の結晶構造を有し、六方晶以外の立方晶、正方晶、斜方晶などの結晶構造、及び非晶質構造を含んでいても構わない。複合タングステン酸化物膜に六方晶の結晶構造を含むことで、六方晶相は赤外域の反射がより大きいため、効率良く反射することができる。 複合 The composite tungsten oxide according to one embodiment of the present invention preferably has a hexagonal crystal structure. The inclusion of the hexagonal crystal structure can be known by analyzing the film by X-ray diffraction. The composite tungsten oxide is known to have a crystal structure such as hexagonal, cubic, tetragonal, and orthorhombic, and an amorphous structure, but the composite tungsten oxide film according to one embodiment of the present invention has a hexagonal crystal structure. And a crystal structure other than hexagonal, such as cubic, tetragonal, orthorhombic, or an amorphous structure. By including the hexagonal crystal structure in the composite tungsten oxide film, the hexagonal phase can reflect efficiently since the reflection in the infrared region is larger.
また、本発明の一実施形態に係る複合タングステン酸化物膜では、CuKα線を使用したX線回折による六方晶のa軸長さとc軸長さの比c/aは1.018~1.029となることが好ましい。結晶構造データベースのICDDリファレンスコード01-081-1244によるとc/aは1.028である。標準の六方晶構造よりも原子が過剰または不足になると、a軸長さやc軸長さが変化すると考えられる。 Further, in the composite tungsten oxide film according to one embodiment of the present invention, the ratio c / a of the a-axis length to the c-axis length of the hexagonal crystal obtained by X-ray diffraction using CuKα ray is 1.018 to 1.029. It is preferable that According to the ICDD reference code 01-081-1244 of the crystal structure database, c / a is 1.028. It is considered that when the number of atoms becomes excessive or insufficient compared with the standard hexagonal structure, the a-axis length and the c-axis length change.
また、本発明の一実施形態に係る複合タングステン酸化物膜では、CuKα線を使用したX線回折による六方晶(002)面の回折強度I(002)と、六方晶(200)面の回折強度I(200)の強度比をI(002)/I(200)としたとき、I(002)/I(200)は0.30以上0.50以下となることが好ましい。前述のICDDリファレンスコード01-081-1244には、(200)面に対する(002)面の相対強度は26.2%と記載されているから、標準の強度比I(002)/I(200)は0.26である。塗布焼成法で作製した複合タングステン酸化物膜の強度比はこの標準値であるが、本発明の強度比は0.30以上0.50以下である。標準の強度比よりも大きいので、六方晶のa、b面の成長が抑制されc面配向の傾向があると考えられる。前述のc/aが1.018~1.029を外れ、強度比I(002)/I(200)が0.30以上0.50以下を外れると熱線反射機能が低下する。 In the composite tungsten oxide film according to one embodiment of the present invention, the diffraction intensity I (002) of the hexagonal (002) plane and the diffraction intensity of the hexagonal (200) plane by X-ray diffraction using CuKα rays When the intensity ratio of I (200) is I (002) / I (200), it is preferable that I (002) / I (200) be 0.30 or more and 0.50 or less. Since the relative intensity of the (002) plane to the (200) plane is described as 26.2% in the above-described ICDD reference code 01-081-1244, the standard intensity ratio I (002) / I (200) Is 0.26. The intensity ratio of the composite tungsten oxide film produced by the coating and firing method is this standard value, but the intensity ratio of the present invention is 0.30 or more and 0.50 or less. Since the intensity ratio is larger than the standard intensity ratio, it is considered that the growth of the hexagonal a and b planes is suppressed and the c-plane orientation tends to occur. If the above-mentioned c / a deviates from 1.018 to 1.029 and the intensity ratio I (002) / I (200) deviates from 0.30 or more to 0.50 or less, the heat ray reflection function decreases.
なお、元素MがSnの場合、結晶構造は三方晶であり、上記X線回折では、六方晶のa軸長さとc軸長さの比c/aは三方晶のa軸長さとc軸長さの比2c/aで算出する。 When the element M is Sn, the crystal structure is trigonal. In the above X-ray diffraction, the ratio c / a between the a-axis length and the c-axis length of the hexagonal crystal is the a-axis length and the c-axis length of the trigonal crystal. It is calculated by the ratio 2c / a.
このような標準と異なる結晶状態と熱線反射機能の関係は、スパッタリング法や真空蒸着法に特有と考えられる。非平衡な非晶質膜が形成された後に、熱処理により結晶構造を形成す過程に起因すると考えられるが、そのメカニズムの詳細は不明である。 関係 The relationship between the crystal state different from the standard and the heat ray reflection function is considered to be unique to the sputtering method and the vacuum evaporation method. It is thought to be due to the process of forming a crystal structure by heat treatment after the formation of a non-equilibrium amorphous film, but the details of the mechanism are unknown.
以上より、本発明の一実施形態に係る複合タングステン酸化物膜によれば、特許文献2や特許文献3に記載の複合タングステン酸化物膜とは異なる特性を有し、可視光域における透明性を有し、赤外光域における反射性を併せ持った赤外線反射膜としての複合タングステン酸化物膜とすることができる。
As described above, according to the composite tungsten oxide film according to one embodiment of the present invention, the composite tungsten oxide film has characteristics different from those of the composite tungsten oxide films described in
<2.複合タングステン酸化物膜の製造方法>
次に、複合タングステン酸化物膜の製造方法について説明する。図3は、本発明の一実施形態に係る複合タングステン酸化物膜の製造方法の概略を示す工程図である。本発明の一実施形態は、元素MとタングステンWと酸素Oを主成分とする複合タングステン酸化物膜の製造方法であって、物理的な成膜法を用いて膜を形成する成膜工程S1と、膜を熱処理する熱処理工程S2とを有する。以下、各工程について詳細に説明する。
<2. Manufacturing method of composite tungsten oxide film>
Next, a method for manufacturing a composite tungsten oxide film will be described. FIG. 3 is a process diagram schematically showing a method for manufacturing a composite tungsten oxide film according to one embodiment of the present invention. One embodiment of the present invention is a method for producing a composite tungsten oxide film containing the element M, tungsten W, and oxygen O as main components, and a film forming step S1 for forming a film using a physical film forming method. And a heat treatment step S2 for heat treating the film. Hereinafter, each step will be described in detail.
<2-1.成膜工程>
成膜工程S1では、物理的な成膜法を用いて膜を形成する。本発明の一実施形態に係る複合タングステン酸化物膜の物理的な成膜方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法、イオンビーム法などがある。この中でも、スパッタリング法は、成膜粒子のエネルギーが大きく付着力が強い、成膜が緻密で膜質が強い、成膜プロセスが安定していて膜質、膜厚の制御が高い精度で可能である。さらに、スパッタリング法は、高融点金属・合金・化合物の成膜が可能、反応性ガスの導入で酸化物や窒化物などの成膜が可能であり、組成の調整が比較的容易などの特長を持ち、液晶表示素子やハードディスク等の電子機器、ウィンドフィルムやミラー等の汎用品など幅広い分野で多く利用され、製造装置も多いことから好ましい。
<2-1. Film forming process>
In the film forming step S1, a film is formed using a physical film forming method. Examples of the physical film forming method of the composite tungsten oxide film according to one embodiment of the present invention include a vacuum deposition method, a sputtering method, an ion plating method, and an ion beam method. Among them, the sputtering method has a large energy of a film-forming particle, a strong adhesive force, a dense film and a strong film quality, a stable film-forming process, and high-precision control of the film quality and the film thickness. In addition, the sputtering method has the advantages that films of high melting point metals, alloys and compounds can be formed, oxides and nitrides can be formed by introducing a reactive gas, and composition adjustment is relatively easy. It is preferable because it is widely used in a wide range of fields, such as electronic devices such as liquid crystal display elements and hard disks, and general-purpose products such as wind films and mirrors, and has many manufacturing devices.
一般式MxWyOzで表した複合タングステン酸化物膜を形成するためのスパッタリングターゲットは、例えば、元素Mと、元素Wからなるスパッタリングターゲット、元素Mと、元素Wと元素Oの化合物から成るスパッタリングターゲット、元素Mと元素Oの化合物と、元素Wから成るスパッタリングターゲットおよび元素Mと元素Wと元素Oの化合物から成るスパッタリングターゲット等、種々の構成から選択することができる。好ましくは、予め化合物相として形成したスパッタリングターゲットを用いることが良い。スパッタリングターゲットを予め化合物相として構成すると各元素の蒸気圧の差による膜組成の依存を軽減することができ、安定した成膜が可能となる。 The sputtering target for forming the composite tungsten oxide film represented by the general formula M x W y O z is, for example, a sputtering target including the element M and the element W, and a sputtering target including the element M and the compound of the element W and the element O. , A sputtering target composed of a compound of the element M and the element O, and a sputtering target composed of a compound of the element M, the element W, and the element O. Preferably, a sputtering target formed in advance as a compound phase is used. If the sputtering target is formed as a compound phase in advance, the dependence of the film composition on the difference in vapor pressure of each element can be reduced, and stable film formation can be achieved.
スパッタリングターゲットは、例えば前記スパッタリングターゲット組成物の粒子からなる粉を圧粉して形成した圧粉体や、前記スパッタリングターゲット組成物を焼結させて形成した焼結体の形態で用いれば良い。 The sputtering target may be used in the form of, for example, a compact formed by compacting powder composed of particles of the sputtering target composition or a sintered body formed by sintering the sputtering target composition.
また、スパッタリングターゲットは、前記の通り圧粉体や焼結体で形成されるため、有機物成分を実質的に含まず、当該ターゲットを用いて形成された膜も有機物成分を実質的に含んでいない。ここで、実質的に含まないとは、例えば高分子分散剤等、意図的に添加される成分を含んでいないことを指す。 In addition, since the sputtering target is formed of a compact or a sintered body as described above, it does not substantially include an organic component, and a film formed using the target does not substantially include an organic component. . Here, “substantially not contained” means that it does not contain intentionally added components such as a polymer dispersant.
スパッタリングターゲットが、例えば比抵抗1Ω・cm以下の導電体であると生産性が高いDCスパッタリング装置を使用することができる。また、スパッタリングターゲットが、例えば相対密度70%以上の焼結体であると輸送時の振動による割れが少なくなり、装置への取付け時等のハンドリングで極端な注意をする必要がなくなるなど、より工業的な製造に適した形態となる。 と If the sputtering target is a conductor having a specific resistance of, for example, 1 Ω · cm or less, a DC sputtering apparatus with high productivity can be used. Further, when the sputtering target is a sintered body having a relative density of 70% or more, for example, cracks due to vibration during transportation are reduced, and it is not necessary to take extreme care in handling such as mounting to an apparatus. It is a form suitable for general production.
成膜工程の雰囲気は、種々選択されるが、不活性ガス雰囲気中が良い。不活性ガスとしては、例えば、ヘリウムガスやアルゴンガスなどの希ガス、窒素ガスなどを用いれば良いが、窒素ガスの場合は、選択元素Mによっては窒化物を形成することがあり、一般的に使用され入手が容易なアルゴンガスがより好ましい。用いるガスの純度は99%以上が好ましく、酸素など酸化性ガスの混合は1%未満であることが好ましい。詳細は不明な点もあるが、不活性雰囲気中で成膜し、のちに述べる条件で熱処理すると、反射率の高い複合タングステン酸化物膜が得られる。一方で酸化性ガスの割合が1%を超えると熱処理後の複合タングステン酸化物膜の反射率が低下する。 雰 囲 気 The atmosphere in the film forming step is variously selected, but preferably in an inert gas atmosphere. As the inert gas, for example, a rare gas such as a helium gas or an argon gas, a nitrogen gas, or the like may be used. In the case of a nitrogen gas, a nitride may be formed depending on the selected element M. Argon gas which is used and easily available is more preferable. The purity of the gas used is preferably 99% or more, and the mixing of oxidizing gas such as oxygen is preferably less than 1%. Although details are unclear, a composite tungsten oxide film having a high reflectance can be obtained by forming a film in an inert atmosphere and performing a heat treatment under the conditions described later. On the other hand, if the ratio of the oxidizing gas exceeds 1%, the reflectance of the composite tungsten oxide film after the heat treatment decreases.
成膜後の膜は、通常は非晶質であるが、X線回折分析した際に結晶に基づく回折ピークが出現していても構わない。 (4) Although the film after film formation is usually amorphous, a diffraction peak based on crystals may appear when subjected to X-ray diffraction analysis.
<2-2.熱処理工程>
次に、熱処理工程S2では、成膜工程S1で得られた膜を熱処理する。本発明の一実施形態に係る複合タングステン酸化物膜の膜特性を得るには熱処理工程S2を不活性または還元雰囲気中で行う。
<2-2. Heat treatment process>
Next, in a heat treatment step S2, the film obtained in the film formation step S1 is heat-treated. In order to obtain the film characteristics of the composite tungsten oxide film according to one embodiment of the present invention, the heat treatment step S2 is performed in an inert or reducing atmosphere.
熱処理工程S2では、熱処理温度は400~700℃が良い。熱処理温度が400℃よりも低いと膜は非晶質のままで結晶化しないか、または結晶化してもX線回折における六方晶の回折ピークが極めて微弱となり、赤外域の遮熱特性が低い。また、熱処理温度が700℃よりも高いとしても本発明の膜の特徴を得ることができるが、膜と基材が反応する、膜が基材から剥離する、表面粗さが増大するなど実用上の不具合が生じる。 In the heat treatment step S2, the heat treatment temperature is preferably 400 to 700 ° C. If the heat treatment temperature is lower than 400 ° C., the film remains amorphous and does not crystallize, or even when crystallized, the hexagonal diffraction peak in X-ray diffraction is extremely weak, and the heat shielding properties in the infrared region are low. Further, even if the heat treatment temperature is higher than 700 ° C., the characteristics of the film of the present invention can be obtained. However, practically, the film reacts with the substrate, the film peels off from the substrate, and the surface roughness increases. Will occur.
前記いずれの熱処理温度においても、熱処理時間は、複合タングステン酸化物の結晶化が完了する程度の時間を確保すればよく基材の熱伝導と生産性との兼ね合いにも依るが、5分~60分程度で適宜調整するとよい。 At any of the above-mentioned heat treatment temperatures, the heat treatment time may be sufficient to complete the crystallization of the composite tungsten oxide, and depends on the balance between the heat conduction of the base material and the productivity. It may be adjusted appropriately in about a minute.
前記の通り熱処理雰囲気は不活性雰囲気または還元雰囲気中で行う。不活性雰囲気としてはたとえば窒素やアルゴン、還元雰囲気としては窒素と水素の混合ガス、アルゴンと水素の混合ガスがあげられる。 の 通 り As described above, the heat treatment is performed in an inert atmosphere or a reducing atmosphere. Examples of the inert atmosphere include nitrogen and argon, and examples of the reducing atmosphere include a mixed gas of nitrogen and hydrogen and a mixed gas of argon and hydrogen.
以上より、本発明の一実施形態に係る複合タングステン酸化物膜の製造方法によれば、上述した特性を有する複合タングステン酸化物膜を、工業的に広く利用され、成膜時に比較的無害な方法で、更に使用原料の長期保存に優れ、輸送時の制限がない、物理的な製造方法で提供することができる。 As described above, according to the method for manufacturing a composite tungsten oxide film according to one embodiment of the present invention, a composite tungsten oxide film having the above-described characteristics is widely used industrially and is relatively harmless during film formation. In addition, the raw material can be provided by a physical production method that is excellent in long-term storage of the raw material and has no restrictions during transportation.
<3.膜形成基材>
本発明の一実施形態に係る膜形成基材は、上述した複合タングステン酸化物膜が被成膜基材の少なくとも一方の面に形成されたものである。被成膜基材は、本発明の一実施形態に係る複合タングステン酸化物膜の形成が可能であれば特に限定されるものではない。
<3. Film-forming substrate>
A film-forming substrate according to one embodiment of the present invention is one in which the above-described composite tungsten oxide film is formed on at least one surface of a film-forming substrate. The substrate on which the film is to be formed is not particularly limited as long as the composite tungsten oxide film according to one embodiment of the present invention can be formed.
成膜後の膜の熱処理温度が400℃以上であるため、被成膜基材は400℃以上の軟化点もしくは熱変形温度を有する基材が好ましい。軟化点もしくは熱変形温度が400℃未満の基材を用いた場合、前記熱処理の際に膜が被成膜基材から剥離する、膜にクラックが発生するなどの問題が生じる。好ましくは、被成膜基材の熱膨張係数が膜の熱膨張係数に近いほうが良い。しかしながら、基材から膜を剥離して使用する場合は必ずしも前記条件である必要はなく、例えば、400℃以下で溶解する基材でも良い。 (4) Since the heat treatment temperature of the film after the film formation is 400 ° C. or higher, the substrate on which the film is to be formed is preferably a substrate having a softening point or heat deformation temperature of 400 ° C. or higher. When a substrate having a softening point or a heat deformation temperature of less than 400 ° C. is used, problems such as peeling of the film from the substrate on which the film is to be formed and cracking of the film occur during the heat treatment. Preferably, the thermal expansion coefficient of the film-forming substrate is closer to the thermal expansion coefficient of the film. However, when the film is used after being peeled off from the base material, the above conditions need not necessarily be satisfied, and for example, a base material that melts at 400 ° C. or lower may be used.
400℃以上の軟化点もしくは熱変形温度を有する被成膜基材には、ガラス、セラミックス、単結晶等がある。被成膜基材は、必ずしも透明である必要はないが、本発明の複合タングステン酸化物膜を基材と共に用いる場合には透明な基材が求められる。透明基材には、例えば、ガラス、YAGやY2O3などの透明セラミックス、サファイヤなどの単結晶がある。なかでも、入手しやすく、安価で、耐候性、耐薬品性などの観点から、400℃以上の軟化点のガラスを被成膜基材に用いるのが好ましい。 Examples of the base material having a softening point or heat distortion temperature of 400 ° C. or higher include glass, ceramics, and single crystals. The substrate on which the film is to be formed is not necessarily required to be transparent. However, when the composite tungsten oxide film of the present invention is used together with the substrate, a transparent substrate is required. Examples of the transparent substrate include glass, transparent ceramics such as YAG and Y 2 O 3, and single crystals such as sapphire. Above all, it is preferable to use a glass having a softening point of 400 ° C. or higher as a substrate on which a film is to be formed, from the viewpoints of easy availability, low cost, weather resistance, chemical resistance and the like.
基材は、平面でなく曲面や凹凸面を有するものでも本発明の特長を損なうものでなく、種々選択すれば良い。 (4) The substrate is not limited to a flat surface but may have a curved surface or an uneven surface without deteriorating the features of the present invention.
以上より、本発明の一実施形態に係る膜形成基材によれば、可視光域における透明性を有し、赤外光域における反射性を併せ持った赤外線反射膜を有する膜形成基材とすることができる。 As described above, according to the film-forming substrate of one embodiment of the present invention, the film-forming substrate has transparency in the visible light region, and has an infrared reflective film having reflectivity in the infrared light region. be able to.
<4.物品>
本発明の一実施形態に係る物品は、上述した複合タングステン酸化物膜及び/又は膜形成基材を1又は複数有する。本発明の一実施形態に係る物品は、複合タングステン酸化物膜が光を反射する機能を有する物品であればどのような物品でも構わない。
<4. Goods>
An article according to one embodiment of the present invention has one or more of the above-described composite tungsten oxide film and / or film-forming substrate. The article according to one embodiment of the present invention may be any article as long as the composite tungsten oxide film has a function of reflecting light.
加えて、本発明の複合タングステン酸化物膜及び/又は膜形成基材が、例えば他の機能を有する膜や粒子等と共に使用されていても、本発明に記載の機能を利用した物品に含まれる。 In addition, even if the composite tungsten oxide film and / or the film-forming substrate of the present invention is used together with, for example, a film or a particle having another function, the composite tungsten oxide film and / or the film-forming substrate is included in an article utilizing the function described in the present invention. .
本発明の複合タングステン酸化物膜は、赤外光域における反射性を有する赤外線反射膜であるが、光を反射して遮蔽する機能を有する物品には、例えば遮熱断熱ガラスがある。
遮熱断熱ガラスは、透明でありながら熱を遮蔽断熱する特長があり、夏場の太陽光による室内温度の上昇や車内温度の上昇などを軽減する。また、冬場の暖房の熱を反射し室内にとどめることもできる。
The composite tungsten oxide film of the present invention is an infrared reflective film having reflectivity in an infrared light region. Examples of the article having a function of reflecting and shielding light include heat-insulating glass.
The heat insulating and insulating glass has a feature of shielding and insulating heat while being transparent, and reduces a rise in indoor temperature and a rise in vehicle temperature due to sunlight in summer. In addition, the heat of the heating in winter can be reflected and kept indoors.
以上より、本発明の一実施形態に係る膜形成基材によれば、可視光域における透明性を有し、赤外光域における反射性を併せ持った複合タングステン酸化物膜やそのような膜形成基材を備える物品とすることができる。 As described above, according to the film-forming substrate of one embodiment of the present invention, a composite tungsten oxide film having transparency in the visible light region and having reflectivity in the infrared light region, and the formation of such a film. The article can be provided with a substrate.
以下、本発明について、実施例を用いてさらに具体的に説明するが、本発明は、以下の実施例に何ら限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited to the following Examples.
(実施例1)
実施例1では、Cs/W原子比が0.33のセシウムタングステン酸化物粉末(住友金属鉱山株式会社製YM-01)をホットプレス装置に投入し、真空雰囲気、温度950℃、押し圧250kgf/cm2の条件で焼結し、セシウムタングステン酸化物焼結体を作製した。焼結体組成を化学分析した結果、Cs/Wは0.33であった。この酸化物焼結体を直径153mm、厚み5mmに機械加工で研削し、ステンレス製バッキングプレートに金属インジウム蝋材を用いて接合して、セシウムタングステン酸化物スパッタリングターゲットを作製した。
(Example 1)
In Example 1, a cesium tungsten oxide powder having a Cs / W atomic ratio of 0.33 (YM-01 manufactured by Sumitomo Metal Mining Co., Ltd.) was charged into a hot press apparatus, and a vacuum atmosphere, a temperature of 950 ° C., and a pressing pressure of 250 kgf / It was sintered under the condition of cm 2 to produce a cesium tungsten oxide sintered body. As a result of chemical analysis of the sintered body composition, Cs / W was 0.33. This oxide sintered body was ground by machining to a diameter of 153 mm and a thickness of 5 mm, and joined to a stainless steel backing plate using a metal indium brazing material, to produce a cesium tungsten oxide sputtering target.
次に、このスパッタリングターゲットをDCスパッタリング装置(アルバック社製SBH2306)に取り付け、到達真空度5×10-3Pa以下、成膜時の雰囲気は、アルゴンガス雰囲気とし、ガス圧は0.6Pa、投入電力は直流600Wの条件で、ガラス基板(コーニング社製EXG、厚み0.7mm)の上にセシウムタングステン酸化物膜を成膜した。成膜後の膜厚は100nmであった(成膜工程S1)。成膜後の膜の構造をX線回折装置(X’Pert-PRO(PANalytical社製)を用いて調べた。成膜後膜は、結晶構造に由来する回折ピークは認められない非晶質の構造であった。 Next, this sputtering target was attached to a DC sputtering apparatus (SBH2306 manufactured by ULVAC, Inc.), the ultimate vacuum was 5 × 10 −3 Pa or less, the atmosphere during film formation was an argon gas atmosphere, and the gas pressure was 0.6 Pa. At a power of 600 W DC, a cesium tungsten oxide film was formed on a glass substrate (EXG manufactured by Corning, thickness 0.7 mm). The film thickness after film formation was 100 nm (film formation step S1). The structure of the film after film formation was examined using an X-ray diffractometer (X'Pert-PRO (manufactured by PANalytical).) The film after film formation was an amorphous film having no diffraction peak derived from the crystal structure. It was a structure.
成膜後の膜を、ランプ加熱炉(株式会社米倉製作所製HP-2-9)に投入し、窒素雰囲気中、500℃の温度で30分間熱処理した(熱処理工程S2)。この熱処理後の膜を化学分析した結果、Cs/W原子比x/yは0.33であった。 (4) The formed film was put into a lamp heating furnace (HP-2-9, manufactured by Yonekura Seisakusho Co., Ltd.) and heat-treated at 500 ° C. for 30 minutes in a nitrogen atmosphere (heat treatment step S2). As a result of chemical analysis of the film after this heat treatment, the Cs / W atomic ratio x / y was 0.33.
熱処理後の膜の構造をX線回折装置(X’Pert-PRO(PANalytical社製)を用いて結晶構造、X線回折強度比、a軸とc軸の比c/aを調べた。また、分光光度計(日立製、型番V-670)を用いて、透過率と反射率を測定した。 With respect to the structure of the film after the heat treatment, the crystal structure, the X-ray diffraction intensity ratio, and the ratio c / a between the a-axis and the c-axis were examined using an X-ray diffractometer (X'Pert-PRO, manufactured by PANalytical). The transmittance and the reflectance were measured using a spectrophotometer (manufactured by Hitachi, model number V-670).
熱処理後の膜の、結晶構造は六方晶を含む構造であった。X線回折強度比は0.401、a軸とc軸の比c/aは1.028であった。また、波長550nmの透過率は71.3%、波長1400nmの透過率は11.3%、波長1400nmの反射率は44.5%であった。 膜 The crystal structure of the film after heat treatment was a structure containing hexagonal crystals. The X-ray diffraction intensity ratio was 0.401, and the ratio c / a between the a-axis and the c-axis was 1.028. The transmittance at a wavelength of 550 nm was 71.3%, the transmittance at a wavelength of 1400 nm was 11.3%, and the reflectance at a wavelength of 1400 nm was 44.5%.
熱処理後の膜のシート抵抗は、抵抗率計(三菱化学社製、ロレスタ)を用いた測定の結果、3.0×103Ω/□であり、熱処理後の膜は導電性が高い低抵抗の膜であった(抵抗の測定は抵抗率に応じて三菱化学製ロレスタまたはハイレスタを使用した)。 The sheet resistance of the film after the heat treatment was 3.0 × 10 3 Ω / □ as a result of measurement using a resistivity meter (manufactured by Mitsubishi Chemical Corporation, Loresta), and the film after the heat treatment had high conductivity and low resistance. (The resistance was measured using Mitsubishi Chemical Loresta or Hiresta according to the resistivity).
また、熱処理後の膜の表面粗さを、レーザー顕微鏡(オリンパス製、OLS4100)を用いて測定したところ算術平均高さ(表面粗さ)Saは8nmであった。 {Circle around (4)} The surface roughness of the film after the heat treatment was measured using a laser microscope (OLS4100, manufactured by Olympus), and the arithmetic average height (surface roughness) Sa was 8 nm.
(実施例2~17および比較例1~13)
実施例1と同様に同じ装置を用い、表1及び表2に記載されているように元素M、組成比、膜厚、成膜雰囲気、熱処理雰囲気、温度および時間を変えて複合タングステン酸化物膜の作成を行い、膜の特性を調べた。表1及び表2に実施例の結果を、比較例の結果と併せて示す。
(Examples 2 to 17 and Comparative Examples 1 to 13)
Using the same apparatus as in Example 1, the composite tungsten oxide film was changed by changing the element M, the composition ratio, the film thickness, the film formation atmosphere, the heat treatment atmosphere, the temperature, and the time as described in Tables 1 and 2. Was prepared and the characteristics of the film were examined. Tables 1 and 2 show the results of the examples together with the results of the comparative examples.
表1及び表2より、本発明に係る複合タングステン酸化物膜の製造方法に含まれる実施例1~17では、波長550nmにおける透過率が50%以上、波長1400nmにおける透過率が30%以下かつ波長1400nmにおける反射率が35%以上という特性を有する膜となることが確認できた。また、このような、本発明に含まれる実施例1~17は、シート抵抗が1.0×105Ω/□未満であり、表面粗さSaが20nm以下であった。一方で、本発明に係る複合タングステン酸化物膜の製造方法に含まれない比較例1~13では、光学特性が前記要件を満たしておらず、またシート抵抗が1.0×105Ω/□以上となった。 From Tables 1 and 2, in Examples 1 to 17 included in the method for producing a composite tungsten oxide film according to the present invention, the transmittance at a wavelength of 550 nm is 50% or more, the transmittance at a wavelength of 1400 nm is 30% or less, and the wavelength is It was confirmed that the film had a characteristic that the reflectance at 1400 nm was 35% or more. Further, in Examples 1 to 17 included in the present invention, the sheet resistance was less than 1.0 × 10 5 Ω / □, and the surface roughness Sa was 20 nm or less. On the other hand, in Comparative Examples 1 to 13 which are not included in the method for manufacturing a composite tungsten oxide film according to the present invention, the optical characteristics do not satisfy the above requirements, and the sheet resistance is 1.0 × 10 5 Ω / □. That's all.
なお、上記のように本発明の一実施形態及び各実施例について詳細に説明したが、本発明の新規事項及び効果から実体的に逸脱しない多くの変形が可能であることは、当業者には、容易に理解できるであろう。従って、このような変形例は、全て本発明の範囲に含まれるものとする。 Although one embodiment and each example of the present invention have been described in detail as described above, it is understood by those skilled in the art that many modifications that do not substantially depart from the novel matter and effects of the present invention are possible. , Will be easy to understand. Therefore, such modified examples are all included in the scope of the present invention.
例えば、明細書又は図面において、少なくとも一度、より広義又は同義な異なる用語と共に記載された用語は、明細書又は図面のいかなる箇所においても、その異なる用語に置き換えることができる。また、複合タングステン酸化物膜とその製造方法の構成も本発明の一実施形態及び各実施例で説明したものに限定されず、種々の変形実施が可能である。 For example, in the specification or the drawings, a term described at least once together with a broader or synonymous different term can be replaced with the different term in any part of the specification or the drawing. Further, the configuration of the composite tungsten oxide film and the method of manufacturing the same are not limited to those described in the embodiment and each example of the present invention, and various modifications can be made.
本発明に係る複合タングステン酸化物膜は、可視光域の高い透明性と赤外域の優れた光反射性と高い膜平滑性を備えているため、光を反射する機能を利用した幅広い用途に利用できる可能性を有している。 Since the composite tungsten oxide film according to the present invention has high transparency in the visible light region, excellent light reflectivity in the infrared region, and high film smoothness, it is used for a wide range of applications utilizing the function of reflecting light. Have the potential to do so.
Claims (15)
0.001≦x/y≦1、2.2≦z/y≦3.0であり、
有機物成分を実質的に含まず、
波長550nmにおける透過率が50%以上、波長1400nmにおける透過率が30%以下、かつ、波長1400nmにおける反射率が35%以上であることを特徴とする複合タングステン酸化物膜。 A general formula M x W y O z (where M is at least one element selected from alkali metals, alkaline earth metals, Fe, In, Tl, and Sn, W is tungsten, and O is oxygen). A composite tungsten oxide film having a composition represented by the main component,
0.001 ≦ x / y ≦ 1, 2.2 ≦ z / y ≦ 3.0,
Contains substantially no organic components,
A composite tungsten oxide film having a transmittance of 50% or more at a wavelength of 550 nm, a transmittance of 30% or less at a wavelength of 1400 nm, and a reflectance of 35% or more at a wavelength of 1400 nm.
CuKα線を使用したX線回折による六方晶のa軸とc軸との比c/aが1.018~1.029である請求項6に記載の複合タングステン酸化物膜。 The intensity ratio between the diffraction intensity I (002) of the hexagonal (002) plane and the diffraction intensity I (200) of the hexagonal (200) plane by X-ray diffraction using CuKα rays is I (002) / I (200). And I (002) / I (200) is 0.30 or more and 0.50 or less,
7. The composite tungsten oxide film according to claim 6, wherein a ratio c / a of a-axis to c-axis of hexagonal crystal determined by X-ray diffraction using CuKα ray is 1.018 to 1.029.
0.001≦x/y≦1、2.2≦z/y≦3.0であり、
当該複合タングステン酸化物膜は、六方晶の結晶構造を含み、
CuKα線を使用したX線回折による六方晶(002)面の回折強度I(002)と、六方晶(200)面の回折強度I(200)の強度比をI(002)/I(200)としたとき、I(002)/I(200)は0.30以上0.50以下であり、
CuKα線を使用したX線回折による六方晶のa軸とc軸との比c/aが1.018~1.029である複合タングステン酸化物膜。 A general formula M x W y O z (where M is at least one element selected from alkali metals, alkaline earth metals, Fe, In, Tl, and Sn, W is tungsten, and O is oxygen). A composite tungsten oxide film having a composition represented by the main component,
0.001 ≦ x / y ≦ 1, 2.2 ≦ z / y ≦ 3.0,
The composite tungsten oxide film has a hexagonal crystal structure,
The intensity ratio between the diffraction intensity I (002) of the hexagonal (002) plane and the diffraction intensity I (200) of the hexagonal (200) plane by X-ray diffraction using CuKα rays is I (002) / I (200). Where I (002) / I (200) is 0.30 or more and 0.50 or less,
A composite tungsten oxide film having a hexagonal a-axis to c-axis ratio c / a of 1.018 to 1.029 by X-ray diffraction using CuKα rays.
物理的な成膜法により膜を形成する成膜工程と、
前記膜を熱処理する熱処理工程とを有し、
前記成膜工程では不活性ガス中で成膜をし、かつ、前記熱処理工程では不活性ガス又は還元性ガスを含む不活性ガス中で400~700℃で熱処理することを特徴とする複合タングステン酸化物膜の製造方法。 A method for producing a composite tungsten oxide film, comprising:
A film forming step of forming a film by a physical film forming method,
A heat treatment step of heat treating the film,
Forming a film in an inert gas in the film forming step and performing a heat treatment in an inert gas containing an inert gas or a reducing gas at 400 to 700 ° C. in the heat treatment step; Production method of material film.
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| CN201980040623.2A CN112313359B (en) | 2018-06-20 | 2019-06-06 | Composite tungsten oxide film, method for producing same, and film-forming substrate and article each having the film |
| KR1020207037653A KR102787402B1 (en) | 2018-06-20 | 2019-06-06 | Composite tungsten oxide film and method for producing the same, and film-forming substrate and article having the film |
| EP19822399.2A EP3812480A4 (en) | 2018-06-20 | 2019-06-06 | TUNGSTEN OXIDE COMPOSITE FILM AND THE MANUFACTURING METHOD FOR THEREFORE AND FILM-FORMING BASE MATERIAL AND ARTICLE WITH THE SAID FILM |
| CN202311298716.XA CN117326592A (en) | 2018-06-20 | 2019-06-06 | Composite tungsten oxide film, method for producing the same, and film-forming substrates and articles having the film |
| US17/252,936 US12006566B2 (en) | 2018-06-20 | 2019-06-06 | Composite tungsten oxide film and method for producing same, and film-deposited base material and article each provided with said film |
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| JP2019-024926 | 2019-02-14 |
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