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WO2019114237A1 - 冷却构件及真空镀膜设备 - Google Patents

冷却构件及真空镀膜设备 Download PDF

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Publication number
WO2019114237A1
WO2019114237A1 PCT/CN2018/092388 CN2018092388W WO2019114237A1 WO 2019114237 A1 WO2019114237 A1 WO 2019114237A1 CN 2018092388 W CN2018092388 W CN 2018092388W WO 2019114237 A1 WO2019114237 A1 WO 2019114237A1
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Prior art keywords
cooling
chamber
rotating shaft
frame
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/092388
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English (en)
French (fr)
Inventor
管长乐
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Beijing Chuangyu Technology Co Ltd
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Beijing Chuangyu Technology Co Ltd
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Publication date
Application filed by Beijing Chuangyu Technology Co Ltd filed Critical Beijing Chuangyu Technology Co Ltd
Publication of WO2019114237A1 publication Critical patent/WO2019114237A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10P72/0434—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0266—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P72/0432—
    • H10P72/0436—
    • H10P72/0441—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Definitions

  • the present invention relates to the field of semiconductor production equipment, and in particular to a cooling member and a vacuum coating apparatus.
  • the thin film layer functions as a photoelectric conversion, and its performance largely determines the photoelectric conversion efficiency of the battery sheet, that is, the key performance parameters of the battery sheet.
  • the film layer is generally grown by MOCVD (Metal Organic Chemical Vapor Deposition) processing, and the MOCVD production equipment is very expensive. In the entire thin film solar cell production line, the MOCVD equipment costs a very high proportion. The increase in production capacity can greatly reduce the manufacturing cost of the battery.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • the mechanism of MOCVD is a thermochemical reaction. At a higher temperature (generally between several hundred and 1000 degrees Celsius), a specific process gas and a metal organic source are introduced into the vacuum chamber to carry out a chemical reaction on the substrate. A thin film layer of a specific material is grown. A continuous process (typically lasting between a few minutes and tens of minutes) is often divided into several stages. At different stages, process temperatures and process gases will change, process gas species switching and flow control, and there are many matures. The parts and control methods are available, but the rapid switching of the process temperature will affect the total time of the cell layer growth process and affect the equipment capacity.
  • the MOCVD process chamber operates under vacuum conditions.
  • the set process pressure is generally between tens and 100 Torr.
  • the gas convection heat transfer efficiency in the vacuum chamber is very low, and the substrate and the substrate are heated due to the growth of the film layer.
  • the device does not touch and there is no heat conduction. Therefore, the temperature switching of the substrate is obtained by means of thermal radiation.
  • the vacuum chamber constitutes a space
  • the outdoor wall of the vacuum chamber is made of corrosion-resistant stainless steel material. Since the temperature range of the substrate is controlled at 300-1200 ° C, the outdoor wall of the chamber cannot exceed the actual needs and safety considerations. 60 ° C, so the outside wall of the chamber will be designed with a cooling water system to ensure that the chamber wall temperature is stable during the process.
  • the heating generally adopts an infrared lamp as a heating source. Through heat radiation, the substrate heats up quickly, and can reach 20 degrees/second or more, and even the heating of the substrate can be carried out in two chambers, first.
  • the function of the chamber is to preheat, for example, to 500 degrees Celsius, and then to the second chamber, the process chamber, which can be quickly heated to the process temperature (such as 700 ° C), saving the time required for heating and improving Equipment capacity.
  • the substrate needs to be switched to different temperatures in different process stages, and the temperature needs to be lowered between some adjacent process steps, and after the process is finished, the substrate temperature must be reduced to a certain range to transfer the process chamber. Generally, it is around 400 ° C. If the substrate with the film layer is transmitted at a higher temperature, the newly formed film layer will be volatilized and decomposed at a high temperature, causing the film quality to deteriorate and contaminating the transfer chamber. In these temperature reduction processes, the current common method is to stop the energy of the infrared tube, and carry the heat away through the chamber wall (constant temperature, 25 ° C) cooling system, the substrate cooling time is longer, thereby reducing the equipment capacity. .
  • the object of the present invention is to provide a cooling member and a vacuum coating device to solve the problem that the process temperature of the existing solar cell film layer growth process cannot be quickly switched, and the equipment capacity is low.
  • the present invention provides a cooling member including a cooling plate and a rotating mechanism.
  • the cooling plate includes a plurality of cooling bars, and the cooling bar is in communication with a coolant pipe.
  • the rotating mechanism includes a driving member and a rotating shaft, and the driving member and the rotating shaft One end is connected, and the other end of the shaft is connected to the cooling strip.
  • the cooling plate further comprises a frame, and the cooling strip is disposed in the frame, and the frame is provided with a perforation for the shaft to pass through.
  • the cooling strip is provided with a through hole adapted to the rotating shaft, and the cooling strip rotates synchronously with the rotating shaft.
  • the driving member is a motor or a cylinder.
  • the frame and the shaft are made of stainless steel.
  • a vacuum coating apparatus comprising a chamber, a heating tube for heating the substrate, and a cooling member of any of the above, the driving member is mounted outside the side wall of the chamber, and the cooling plate is mounted on the heating tube and the chamber Between the bottom plates.
  • one end of the rotating shaft is connected to the driving member through the side wall of the chamber through the first sealing rotating device, and the other end of the rotating shaft is rotatably mounted on the side wall of the chamber on the symmetrical side by the second sealing rotating device.
  • first sealing rotating device and the second sealing rotating device are both magnetic fluid bearings.
  • the frame is fixed to the upper side of the bottom plate of the chamber by a support member.
  • the heating lamp tube is an infrared lamp tube, and the infrared lamp tube is mounted on the lower side of the substrate.
  • the invention provides a cooling member, wherein the rotating mechanism drives the cooling strip in the cooling plate to rotate, the cooling state, the cooling strip is parallel to the substrate in the chamber, the cooling area is increased, and the cooling efficiency is improved; and the driving member drives cooling in the uncooled state.
  • the rotation of the strip makes the cooling strip perpendicular to the substrate in the chamber, reduces the cooling area, improves the heating efficiency, realizes the rapid switching of the process temperature, reduces the production time of the process, improves the equipment production capacity, and saves energy consumption.
  • FIG. 1 is a schematic structural view of an embodiment of the present invention
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1.
  • connection In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.
  • an embodiment of the present invention provides a cooling member including a cooling plate 4 and a rotating mechanism.
  • the cooling plate 4 includes a frame 41 and a cooling strip 42 disposed in the frame 41.
  • the cooling strip 42 is connected to the coolant line.
  • the rotating mechanism includes a driving member 5 and a rotating shaft 7, and the driving member 5 is connected to one end of the rotating shaft 7, and the frame 41 is provided with a through hole, and the other end of the rotating shaft 7 passes through the through hole and is connected to the cooling strip 42.
  • the cooling plate 4 includes a frame 41 and a plurality of cooling strips 42 disposed in the frame 41, preferably 10 cooling strips 42.
  • the cooling strip 42 communicates with the coolant line to ensure that the cooling liquid circulates in the cooling strip 42 and improves The cooling efficiency can be controlled while controlling the cooling flow rate of the cooling strip 42 in the cooling strip 42 according to actual needs.
  • each of the cooling strips 42 corresponds to an adapted rotating mechanism, and the rotating mechanism comprises a driving member 5 and a rotating shaft 7, and the driving member 5 is a motor or a cylinder, preferably a cylinder, which is low in cost and easy to control.
  • the driving end of the cylinder is connected to one end of the rotating shaft 7, and the other end of the rotating shaft 7 is rotatably connected to the second sealing rotating device 8.
  • the first sealing rotating device 6 and the second sealing rotating device 8 are preferably magnetic fluid bearings.
  • the frame 41 is provided with a through hole
  • the cooling strip 42 is provided with a through hole.
  • the rotating shaft 7 sequentially passes through the through hole at one end of the frame 41 and the through hole of the cooling strip 42, and finally passes through the perforation at the other end of the frame 41 to ensure the rotating shaft 7
  • the rotating shaft 7 is freely rotatable in the perforation.
  • the rotating shaft 7 is sleeved with the through hole to achieve an interference fit, so that the rotating shaft 7 drives the cooling strip 42 to rotate synchronously, and the frame 41 supports the rotating shaft 7 and the cooling strip 42 to ensure normal operation.
  • the cooling strip 42 has no through hole
  • the rotating shaft 7 and the cooling strip 42 can be welded integrally, so that the rotating shaft 7 drives the cooling strip 42 to rotate synchronously.
  • the frame 41 and the shaft 7 are made of corrosion-resistant stainless steel, preferably SST316L.
  • an embodiment of the present invention provides a vacuum coating apparatus including a chamber 1 , a heating tube 3 for heating the substrate 2 , and a cooling member.
  • the driving member 5 is mounted outside the side wall of the chamber 1 .
  • the cooling plate 4 is installed between the heating lamp tube 3 and the bottom plate of the chamber 1.
  • the heating lamp tube 3 is mounted on the lower side of the substrate 2 as a heat source to heat the substrate 2, and the cooling plate 4 is installed between the heating lamp tube 3 and the bottom plate of the chamber for cooling the substrate 2 and heating the tube 3
  • the infrared lamp tube is heated, the energy consumption is low, and the heating efficiency is high, and the frame 41 is fixed to the upper side of the bottom plate of the chamber 1 by the support member.
  • one end of the rotating shaft 7 is connected to the driving member 5 through the side wall of the chamber 1 through the first sealing rotating device 6, and the driving end of the cylinder is installed outside the side wall of the chamber 1 through the first sealing rotating device 6, first
  • the sealing rotary device 6 is sealingly fitted to the side wall of the chamber 1 to ensure the overall sealing of the chamber 1; the other end of the rotating shaft 7 is rotatably mounted on the side wall of the chamber 1 on the symmetrical side by the second sealing rotary device 8.
  • the first sealing rotating device 6 and the second sealing rotating device 8 are both magnetic fluid bearings, which ensure that the rotating shaft 7 is sealingly connected with the side wall of the chamber 1 to improve the sealing performance of the device.
  • the cooling strip When the substrate needs to be cooled, the cooling strip is parallel to the substrate, and the cooling liquid circulates, and the flow rate of the cooling liquid can be increased as needed to improve the cooling efficiency;
  • the cylinder drive shaft drives the cooling strip to rotate 90 degrees, so that the cooling strip is perpendicular to the substrate, and reduces the flow rate of the coolant, so that the infrared heating tube sufficiently heats the substrate to improve the heating efficiency.
  • the invention provides a cooling member, wherein the rotating mechanism drives the cooling strip in the cooling plate to rotate, the cooling state, the cooling strip is parallel to the substrate in the chamber, the cooling area is increased, and the cooling efficiency is improved; and the driving member drives cooling in the uncooled state.
  • the rotation of the strip makes the cooling strip perpendicular to the substrate in the chamber, reduces the cooling area, improves the heating efficiency, achieves rapid switching of the process temperature, reduces the production time of the process, increases the production capacity of the device, and saves energy consumption.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种冷却构件，包括冷却板（4）和旋转机构，冷却板（4）包括若干根冷却条（42），冷却条（42）与冷却液管路连通，旋转机构包括驱动件（5）和转轴（7），驱动件（5）与转轴（7）的一端连接，转轴（7）的另一端与冷却条（42）连接。还公开了一种真空镀膜设备。

Description

冷却构件及真空镀膜设备 技术领域
本发明涉及半导体生产设备领域，特别是涉及一种冷却构件及真空镀膜设备。
背景技术
在薄膜太阳能电池组件中，薄膜层起到光电转换的作用，其性能在很大程度上决定了电池片的光电转换效率，即电池片的关键性能参数。薄膜层一般采用MOCVD(Metal Organic Chemical Vapor Deposition，金属有机化学气相沉积)的加工方式进行材料生长，而MOCVD生产设备非常昂贵，在整条薄膜太阳能电池片生产线中，MOCVD设备成本占据非常高的比例，其产能的提高能够极大的降低电池片的制造成本。
MOCVD的机理是一种热化学反应，在较高的温度下(一般在几百到1000摄氏度之间)，真空腔室中通入特定的工艺气体以及金属有机物源，进行化学反应，在基片上生长出特定材料的薄膜层。一个连续工艺过程(一般持续几分钟到几十分钟之间)往往分为几个阶段，在不同的阶段，工艺温度和工艺气体会有变化，工艺气体种类切换和流量控制，当前已经有很多成熟的零部件以及控制方法可用，但工艺温度的快速切换将影响电池片膜层生长工艺的总时间，影响到设备产能。
MOCVD工艺腔室在真空条件下工作，设定的工艺压力一般在几十到一百Torr之间，真空腔室内的气体对流传热效率会非常低，且由于膜层生长其上的基片与加热器不接触，没有热传导产生，因此，基片的温度切换都是采用热辐射的方式获得能量。
当前的常见方案，真空腔室构成一个空间，真空腔室外壁由耐腐 蚀的不锈钢材料构成，由于基片的温度范围控制在300～1200℃，而根据实际需要及安全考虑，腔室外壁不能超过60℃，所以，腔室外壁会设计有冷却水系统，确保工艺过程中，腔室壁温度稳定。当前，加热一般采用红外灯管作为加热源，通过热辐射，基片升温速度很快，可达到20度/秒以上，甚至可以把基片的加热分别在两个腔室分段进行，第一个腔室的作用是预热，比如加热到500摄氏度，然后再传入第二个腔室，即工艺腔室，能迅速加热到工艺温度(比如700℃)，节省加热所需的时间，提高设备的产能。但在工艺腔室内，基片在不同工艺阶段需要切换成不同的温度，部分相邻工艺步骤之间需要降低温度，并且在工艺结束后，基片温度必须降低到一定范围才能传出工艺腔室，一般在400℃左右，如果在较高温度下传出长有膜层的基片，新生成的膜层将在高温下挥发分解，造成膜层质量下降，并污染传输腔室。在这些温度降低的过程中，当前常用的方法是停止红外灯管的能量，通过腔室壁(恒温，25℃)的冷却系统将热量带走，基片冷却时间较长，从而降低了设备产能。
发明内容
(一)要解决的技术问题
本发明的目的是提供一种冷却构件及真空镀膜设备，以解决现有太阳能电池片膜层生长工艺中无法快速切换工艺温度，设备产能低的问题。
(二)技术方案
为了解决上述技术问题，本发明提供一种冷却构件，包括冷却板和旋转机构，冷却板包括若干根冷却条，冷却条与冷却液管路连通，旋转机构包括驱动件和转轴，驱动件与转轴的一端连接，转轴的另一端与冷却条连接。
其中，冷却板还包括框架，冷却条设于框架内，框架上设有用以转轴穿过的穿孔。
其中，冷却条设有与转轴适配的贯穿孔，冷却条与转轴同步转动。
其中，驱动件为电机或气缸。
其中，框架与转轴的材质均为不锈钢材质。
一种真空镀膜设备，包括腔室、用以加热基片的加热灯管和以上任一项的冷却构件，驱动件安装在腔室的侧壁外侧，冷却板安装在加热灯管与腔室的底板之间。
其中，转轴的一端通过第一密封旋转装置穿过腔室的侧壁与驱动件连接，转轴的另一端通过第二密封旋转装置可旋转的安装在对称侧的腔室侧壁上。
其中，第一密封旋转装置与第二密封旋转装置均为磁流体轴承。
其中，框架通过支撑件固定在腔室的底板上侧。
其中，加热灯管为红外灯管，红外灯管安装于基片的下侧。
(三)有益效果
本发明提供的一种冷却构件，旋转机构驱动冷却板内的冷却条转动，冷却状态，冷却条与腔室内的基片平行，加大冷却面积，提高冷却效率；非冷却状态，驱动件驱动冷却条转动，使冷却条与腔室内的基片垂直，减小冷却面积，提高加热效率，实现工艺温度的快速切换，降低工艺生产时间，提高设备产能，节约能源消耗。
附图说明
图1为本发明实施例的结构示意图；
图2为图1中沿A-A向的剖视图。
图中，1、腔室；2、基片；3、加热灯管；4、冷却板；41、框架；42、冷却条；5、驱动件；6、第一密封旋转装置；7、转轴；8、第二密封旋转装置。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实例用于说明本发明，但不用来限制本发明的范围。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
如图2所示，本发明实施例提供一种冷却构件，包括冷却板4和旋转机构，冷却板4包括框架41和设于框架41内的冷却条42，冷却条42与冷却液管路连通，旋转机构包括驱动件5和转轴7，驱动件5与转轴7的一端连接，框架41上设有穿孔，转轴7的另一端穿过穿孔并与冷却条42连接。
其中，冷却板4包括框架41和设于框架41内的若干根冷却条42，优选10根冷却条42，冷却条42与冷却液管路连通，保证冷却液在冷却条42内循环流动，提高冷却效率，同时可根据实际需要控制冷却条42内的冷却液流量控制冷却条42的冷却效果。
进一步地，每根冷却条42对应一个适配的旋转机构，旋转机构包括驱动件5和转轴7，驱动件5为电机或气缸，优选气缸，成本低，易控制。
其中，气缸的驱动端与转轴7的一端连接，转轴7的另一端与第二密封旋转装置8可旋转连接，第一密封旋转装置6与第二密封旋转装置8优选的为磁流体轴承。
进一步地，框架41上设有穿孔，冷却条42设有贯穿孔，转轴7依次穿过框架41一端的穿孔和冷却条42的贯穿孔，最后从框架41另一端的穿孔穿出，保证转轴7在穿孔内可自由旋转，同时，转轴7与贯穿孔套接实现过盈配合，使转轴7带动冷却条42同步转动，框架41支撑转轴7和冷却条42，保证正常工作。冷却条42无贯穿孔时，可以将转轴7与冷却条42焊接成一体，从而使转轴7带动冷却 条42同步转动。
其中，框架41和转轴7的材质均为耐腐蚀的不锈钢材质，优选SST316L型号。
如图1所示，本发明实施例提供一种真空镀膜设备，包括腔室1、用以加热基片2的加热灯管3和冷却构件，驱动件5安装在腔室1的侧壁外侧，冷却板4安装在加热灯管3与腔室1的底板之间。
进一步的，加热灯管3安装于基片2的下侧，作为热源以加热基片2，冷却板4安装在加热灯管3与腔室底板之间，用以冷却基片2，加热灯管3优选红外灯管加热，耗能低，加热效率高，框架41通过支撑件固定在腔室1的底板上侧。
其中，转轴7的一端通过第一密封旋转装置6穿过腔室1的侧壁与驱动件5连接，气缸的驱动端通过第一密封旋转装置6安装在腔室1的侧壁外侧，第一密封旋转装置6与腔室1的侧壁密封适配，保证腔室1的整体密封性；转轴7的另一端通过第二密封旋转装置8可旋转的安装在对称侧的腔室1的侧壁上，第一密封旋转装置6与第二密封旋转装置8均为磁流体轴承，保证转轴7与腔室1的侧壁密封连接，提高设备的密封性能。
本发明实施例的操作步骤如下：
当基片需要降温时，使冷却条与基片平行，冷却液循环流动，可根据需要加大冷却液的流量，以提高冷却效率；
当基片需要加热时，气缸驱动转轴带动冷却条转动90度，使冷却条与基片垂直，并降低冷却液流量，使红外加热管充分对基片加热，提高加热效率。
本发明提供的一种冷却构件，旋转机构驱动冷却板内的冷却条转动，冷却状态，冷却条与腔室内的基片平行，加大冷却面积，提高冷却效率；非冷却状态，驱动件驱动冷却条转动，使冷却条与腔室内的基片垂直，减小冷却面积，提高加热效率，实现工艺温度的快速切换， 降低工艺生产时间，提高设备产能，节约能源消耗。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种冷却构件，其特征在于，包括冷却板和旋转机构，所述冷却板包括若干根冷却条，所述冷却条与冷却液管路连通，所述旋转机构包括驱动件和转轴，所述驱动件与所述转轴的一端连接，所述转轴的另一端与所述冷却条连接。
  2. 如权利要求1所述的冷却构件，其特征在于，所述冷却板还包括框架，所述冷却条设于所述框架内，所述框架上设有用以所述转轴穿过的穿孔。
  3. 如权利要求1所述的冷却构件，其特征在于，所述冷却条设有与所述转轴适配的贯穿孔，所述冷却条与所述转轴同步转动。
  4. 如权利要求1所述的冷却构件，其特征在于，所述驱动件为电机或气缸。
  5. 如权利要求2所述的冷却构件，其特征在于，所述框架与所述转轴的材质均为不锈钢材质。
  6. 一种真空镀膜设备，其特征在于，包括腔室、用以加热基片的加热灯管和权利要求1至5中任一项所述的冷却构件，所述驱动件安装在所述腔室的侧壁外侧，所述冷却板安装在所述加热灯管与所述腔室的底板之间。
  7. 如权利要求6所述的真空镀膜设备，其特征在于，所述转轴的一端通过第一密封旋转装置穿过腔室的侧壁与所述驱动件连接，所述转轴的另一端通过第二密封旋转装置可旋转地安装在对称侧的腔室侧壁上。
  8. 如权利要求7所述的真空镀膜设备，其特征在于，所述第一密封旋转装置与所述第二密封旋转装置均为磁流体轴承。
  9. 如权利要求6所述的真空镀膜设备，其特征在于，所述框架通过支撑件固定在所述腔室的底板上侧。
  10. 如权利要求6所述的真空镀膜设备，其特征在于，所述加热 灯管为红外灯管，所述红外灯管安装于基片的下侧。
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