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WO2019186902A1 - Masque de dépôt en phase vapeur et procédé de fabrication de masque de dépôt en phase vapeur - Google Patents

Masque de dépôt en phase vapeur et procédé de fabrication de masque de dépôt en phase vapeur Download PDF

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Publication number
WO2019186902A1
WO2019186902A1 PCT/JP2018/013265 JP2018013265W WO2019186902A1 WO 2019186902 A1 WO2019186902 A1 WO 2019186902A1 JP 2018013265 W JP2018013265 W JP 2018013265W WO 2019186902 A1 WO2019186902 A1 WO 2019186902A1
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WIPO (PCT)
Prior art keywords
mask
vapor deposition
frame
region
open
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/013265
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English (en)
Japanese (ja)
Inventor
山渕　浩二
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Sharp Corp
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Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to PCT/JP2018/013265 priority Critical patent/WO2019186902A1/fr
Publication of WO2019186902A1 publication Critical patent/WO2019186902A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks

Definitions

  • the present invention relates to a vapor deposition mask and a method for manufacturing the vapor deposition mask.
  • Patent Document 1 discloses a technique of performing sub-pixel deposition using a deposition mask having a structure in which an FMM (Fine Metal Mask) and a resin mask are laminated in manufacturing a display device.
  • FMM Fe Metal Mask
  • a vapor deposition mask is a vapor deposition mask for forming a vapor deposition layer on a vapor deposition substrate provided with a plurality of active regions in which a plurality of subpixels are formed, and a fine metal mask is attached to the vapor deposition mask.
  • the effective part including the active mask is provided so as to straddle the plurality of active areas, and the first mask frame and the second mask frame are overlapped and joined to correspond to the active part corresponding to one of the active areas.
  • a first region having a shape to be formed and a second region defining the shape of the first region, and a plurality of vapor deposition holes included in the second region are It is shielded by the non-opening portion of the serial open mask.
  • a method for manufacturing a vapor deposition mask is a method for manufacturing a vapor deposition mask for forming a vapor deposition layer on a deposition target substrate provided with a plurality of active regions in which a plurality of subpixels are formed. Including a step of overlapping and bonding a first mask frame to which a fine metal mask is attached and a second mask frame to which an open mask including a plurality of openings and non-openings corresponding to a plurality of active regions is attached.
  • an effective portion including a plurality of vapor deposition holes is provided so as to straddle the plurality of active regions, and the effective portion has a shape corresponding to one of the plurality of active regions by the step.
  • a first region and a second region defining the shape of the first region are formed, and a plurality of vapor deposition holes included in the second region are formed in front of each other. It is shielded by the non-opening portion of the open mask.
  • the outer shape of the active region can be easily changed by replacing the open mask bonded to the FMM to obtain a new combination of evaporation masks.
  • “same layer” means formed in the same process (film formation step), and “lower layer” means formed in a process prior to the layer to be compared.
  • the “upper layer” means that it is formed in a later process than the layer to be compared.
  • FIG. 1 is a flowchart showing an example of a method for manufacturing the display device 2.
  • FIG. 2 is a cross-sectional view showing the configuration of the display area of the display device 2.
  • a resin layer 12 is formed on a translucent support substrate (for example, mother glass) (step S1).
  • the barrier layer 3 is formed (step S2).
  • the TFT layer 4 is formed (step S3).
  • a top emission type light emitting element layer 5 is formed (step S4).
  • the sealing layer 6 is formed (step S5).
  • an upper surface film is pasted on the sealing layer 6 (step S6).
  • step S7 the support substrate is peeled off from the resin layer 12 by laser light irradiation or the like.
  • the lower film 10 is attached to the lower surface of the resin layer 12 (step S8).
  • step S9 the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces.
  • step S10 an electronic circuit board (for example, an IC chip and an FPC) is mounted on a part (terminal portion) outside (a non-display area, a frame) of the display area where the plurality of sub-pixels are formed (step S11).
  • steps S1 to S11 are performed by a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).
  • the material of the resin layer 12 examples include polyimide.
  • the resin layer 12 may be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.
  • the barrier layer 3 is a layer that prevents foreign matters such as water and oxygen from entering the TFT layer 4 and the light emitting element layer 5.
  • a silicon oxide film, a silicon nitride film, or an oxynitride formed by a CVD method is used.
  • a silicon film or a laminated film thereof can be used.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE and a gate wiring GH above the inorganic insulating film 16, and a gate electrode GE and An inorganic insulating film 18 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 18, an inorganic insulating film 20 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 20 And a planarizing film 21 (interlayer insulating film) that is an upper layer than the source wiring SH.
  • the semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 15 and the gate electrode GE. Is done.
  • the transistor is shown with a top gate structure, but may have a bottom gate structure.
  • the gate electrode GE, the gate wiring GH, the capacitor electrode CE, and the source wiring SH are configured by, for example, a single layer film or a stacked film of a metal including at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper.
  • the TFT layer 4 in FIG. 2 includes one semiconductor layer and three metal layers.
  • the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method.
  • the planarizing film 21 can be made of, for example, an applicable organic material such as polyimide or acrylic.
  • the light emitting element layer 5 includes an anode 22 above the planarizing film 21, an insulating edge cover 23 covering the edge of the anode 22, an EL (electroluminescence) layer 24 above the edge cover 23, and an EL layer 24 and a cathode 25 above the upper layer.
  • the edge cover 23 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.
  • a light-emitting element ES for example, OLED: organic light-emitting diode, QLED: quantum dot light-emitting diode
  • ES for example, OLED: organic light-emitting diode, QLED: quantum dot light-emitting diode
  • a sub-pixel circuit for controlling ES is formed in the TFT layer 4.
  • the EL layer 24 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side.
  • the light emitting layer is formed in an island shape at the opening (for each subpixel) of the edge cover 23 by a vapor deposition method or an ink jet method.
  • the other layers are formed in an island shape or a solid shape (common layer).
  • the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.
  • a vapor deposition mask to which an FMM (Fine Metal Mask, fine metal mask) is attached is used.
  • the FMM is a sheet having a large number of openings (for example, made of Invar), and an island-shaped light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening.
  • the light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one subpixel) by, for example, applying a solvent in which quantum dots are diffused by inkjet.
  • the anode 22 is composed of, for example, a laminate of ITO (IndiumITOTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity.
  • the cathode (cathode) 25 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).
  • the light-emitting element ES is an OLED
  • holes and electrons are recombined in the light-emitting layer by the driving current between the anode 22 and the cathode 25, and light is emitted in the process in which the excitons generated thereby transition to the ground state.
  • the cathode 25 is light-transmitting and the anode 22 is light-reflective, the light emitted from the EL layer 24 is directed upward and becomes top emission.
  • the light-emitting element ES is a QLED
  • holes and electrons are recombined in the light-emitting layer due to the drive current between the anode 22 and the cathode 25, and the excitons generated thereby are conduction band levels of the quantum dots.
  • Light (fluorescence) is emitted in the process of transition from valence band level to valence band.
  • a light emitting element inorganic light emitting diode or the like
  • OLED organic light emitting diode
  • the sealing layer 6 is translucent, and includes an inorganic sealing film 26 that covers the cathode 25, an organic buffer film 27 that is above the inorganic sealing film 26, and an inorganic sealing film 28 that is above the organic buffer film 27. Including.
  • the sealing layer 6 covering the light emitting element layer 5 prevents penetration of foreign substances such as water and oxygen into the light emitting element layer 5.
  • Each of the inorganic sealing film 26 and the inorganic sealing film 28 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method. be able to.
  • the organic buffer film 27 is a light-transmitting organic film having a flattening effect, and can be made of a coatable organic material such as acrylic.
  • the organic buffer film 27 can be formed by, for example, inkjet coating, but a bank for stopping the liquid droplets may be provided in the non-display area.
  • the lower film 10 is, for example, a PET film for realizing the display device 2 having excellent flexibility by being attached to the lower surface of the resin layer 12 after peeling the support substrate.
  • the functional film 39 has, for example, at least one of an optical compensation function, a touch sensor function, and a protection function.
  • Embodiment 1 of the present invention relates to the process of step S4 in FIG. 1, and particularly relates to a vapor deposition mask 7 used in the process of forming the light emitting element layer 5.
  • FIG. 3 is a diagram showing an example of components of the vapor deposition mask 7 according to the present embodiment.
  • FIG. 3A shows a configuration and a cross section of the FMM frame 8.
  • FIG. 3B shows a configuration and a cross section of the open mask frame 9a.
  • FIG. 3C shows a configuration and a cross section of the open mask frame 9b.
  • FIG. 4 is a diagram showing an example of a cross section of the vapor deposition mask 7 according to the present embodiment.
  • FIG. 4A shows a cross section of a single vapor deposition mask 7.
  • FIG. 4B shows a cross section of the vapor deposition mask 7 and its periphery during the vapor deposition process.
  • FIG. 5 is a diagram illustrating an example of the active area AA having the edge EG of the deposition target substrate SB according to the present embodiment.
  • FIG. 5A shows an active area AAa having a round corner edge EGr.
  • FIG. 5B shows an active area AAb having a notch edge EGn.
  • the active area AA is a general term for the active areas AAa and AAb.
  • the edge EG is a generic name for the edges EGa and EGb.
  • a vapor deposition mask 7 is for forming a vapor deposition layer on a vapor deposition substrate SB provided with a plurality of active regions in which a plurality of sub-pixels are formed, and an FMM frame (with an FMM 82 attached) (First mask frame) 8 and an open mask frame (second mask frame) 9 to which an open mask 92 including a plurality of openings 93 and non-openings 94 corresponding to each of the plurality of active regions is attached.
  • the active area is a display area of the display device 2.
  • the effective portion 83 including a plurality of vapor deposition holes is provided in the FMM 82 so as to straddle a plurality of active regions.
  • the effective portion 83 has a first region having a shape corresponding to one of the plurality of active regions, and a second region defining the shape of the first region, Is formed.
  • the plurality of vapor deposition holes included in the second region are shielded by the non-opening portion 94 of the open mask 92.
  • the first region is a region corresponding to the opening 93 of the open mask 92.
  • the second region is a region corresponding to the non-opening portion 94 of the open mask 92.
  • the open mask frame 9 is a general term for the open mask frames 9a and 9b.
  • the open mask 92 is a general term for the open masks 92a and 92b.
  • the opening 93 is a general term for the openings 93a and 93b.
  • the non-opening portion 94 is a general term for the non-opening portions 94a and 94b.
  • the FMM frame 8 includes a frame 81 and an FMM 82.
  • the FMM 82 is stretched and welded to the frame 81.
  • the FMM 82 may have a long strip shape divided into seven as shown in FIG. 3A, a wide shape, a strip shape divided into a number other than seven, or no division (solid) ) Or a cell shape divided vertically and horizontally.
  • the open mask frame 9a includes a frame 91 and an open mask 92a.
  • the open mask 92a includes a plurality of openings 93a and non-openings 94a.
  • the non-opening portion 94a of the open mask 92a has a rectangular frame shape in a portion overlapping the second region.
  • the open mask 92a is stretched and welded to the frame 91.
  • the open mask frame 9b includes a frame 91 and an open mask 92b.
  • the open mask 92b includes a plurality of openings 93b and non-openings 94b.
  • a portion overlapping the second region has a shape of a deformed frame.
  • the open mask 92b is stretched and welded to the frame 91.
  • the plurality of vapor deposition holes included in the effective portion 83 of the FMM 82 are formed with the same shape and the same pitch.
  • the non-opening portion 94 of the open mask 92 has a shape corresponding to the active region.
  • the open mask frame 9a is used.
  • the open mask frame 9b is used.
  • the FMM frame 8 and the open mask frame 9 are detachably joined.
  • the FMM frame 8 and the open mask frame 9 may be joined in the vertical direction (normal direction of the FMM 82) with screws SC. Due to the screwing in the vertical direction, the FMM frame 8 and the open mask frame 9 are less likely to be displaced as compared with the screwing in the horizontal direction.
  • the open mask 92 may define the entire edge EG of the active area AA, or may define at least a part of the edge EG of the active area AA.
  • the open mask 92 may define a round corner edge EGr of the active area AAa, for example, as shown in FIG. 5A, or a notch edge of the active area AAb, as shown in FIG. 5B.
  • EGn may be defined.
  • the open mask 92 may be a mixture of a plurality of cell shapes.
  • the FMM frame 8 has a larger outer size than the open mask frame 9.
  • the FMM frame 8 is disposed closer to the deposition target substrate SB than the open mask frame 9. Thereby, the improvement of the vapor deposition precision in the to-be-deposited substrate SB can be aimed at.
  • the deposition substrate SB is obtained by turning the layers including the resin layer 12, the barrier layer 3, the TFT layer 4, the anode 22, the edge cover 23, and the EL layer 24 upside down as shown in FIG.
  • the deposition substrate SB and the deposition mask 7 are combined and mounted on the deposition apparatus.
  • the deposition target substrate SB and the deposition mask 7 are brought into close contact with each other, for example, by being hooked by a hook provided in a gap between them.
  • an alignment marker 84 (a marker for alignment with the vapor deposition substrate SB) of the vapor deposition mask 7 is on the frame 81.
  • the alignment marker 84 as a reference, the vapor deposition mask 7 and the vapor deposition substrate SB can be aligned with an accuracy of 5 ⁇ m or less.
  • the open mask frame 9 is combined with the FMM frame 8 with an accuracy of several tens to 200 ⁇ m, which is the required accuracy of the active area.
  • the open mask 92 is on the vapor deposition apparatus side (opposite side to the vapor deposition substrate SB) at a distance close to the FMM 82 by about 0.1 mm.
  • the vapor deposition mask 7 is configured by combining the FMM frame 8 and the open mask frame 9, and the open mask frame 9 is exchanged according to the outer shape of the active region. Therefore, the outer shape of the active area can be easily changed.
  • Embodiment 2 of the present invention relates to the process of step S4 of FIG. 1 and particularly relates to a method of manufacturing a vapor deposition mask 7 used in the process of forming the light emitting element layer 5. That is, the present invention relates to a method for manufacturing the vapor deposition mask 7 according to the first embodiment.
  • the manufacturing method of the vapor deposition mask 7 includes an FMM frame 8 to which an FMM 82 is attached, and an open mask frame 9 to which an open mask 92 including a plurality of openings 93 and non-openings 94 corresponding to the plurality of active areas AA is attached. And a step of overlapping and joining.
  • an effective portion 83 including a plurality of vapor deposition holes is provided so as to straddle a plurality of active areas AA.
  • a first area having a shape corresponding to one of the plurality of active areas AA and a second area defining the shape of the first area are formed in the effective portion 83, and the second area is formed in the second area.
  • the plurality of included vapor deposition holes are shielded by the non-opening portion 94 of the open mask 92.
  • the open mask frame 9a including the open mask 92a in which the portion overlapping the second area has a rectangular frame shape is selected.
  • the open mask frame 9b including the open mask 92b in which the portion overlapping the second area has the shape of an irregular frame is selected.
  • the FMM frame 8 and the open mask frame 9 are joined so that the FMM frame 8 is located on the vapor deposition substrate SB side.
  • the electro-optical element (electro-optical element whose luminance and transmittance are controlled by current) included in the display device 2 according to the present embodiment is not particularly limited.
  • an organic EL (Electro Luminescence) display including an OLED (Organic Light Emitting Diode) as an electro-optic element, and an inorganic light-emitting diode as an electro-optic element examples include an inorganic EL display provided, a QLED display provided with a QLED (Quantum dot Light Emitting Diode) as an electro-optic element, and the like.
  • the vapor deposition mask of aspect 1 is a vapor deposition mask for forming a vapor deposition layer on a vapor deposition substrate provided with a plurality of active regions in which a plurality of sub-pixels are formed, and is a first mask in which a fine metal mask is attached.
  • One region and a second region defining the shape of the first region are formed, and a plurality of vapor deposition holes included in the second region are formed in the open region. It is shielded by the non-opening portion of the disk.
  • the non-opening portion of the open mask has a rectangular frame shape that overlaps the second region.
  • the non-opening portion of the open mask has a shape of a deformed frame at a portion overlapping the second region.
  • the plurality of vapor deposition holes are formed with the same shape and the same pitch.
  • the non-opening portion of the open mask has a shape corresponding to the active region.
  • the first mask frame and the second mask frame are detachably joined.
  • the first mask frame and the second mask frame are joined in the normal direction of the fine metal mask by screws.
  • the open mask defines the entire edge of the active region.
  • the open mask defines at least a part of an edge of the active region.
  • the open mask defines a round corner edge of the active area.
  • the open mask defines a notch edge of the active area.
  • the first mask frame has a larger outer size than the second mask frame.
  • the first mask frame is disposed closer to the deposition substrate than the second mask frame.
  • the fine metal mask and the open mask are in contact with each other.
  • a deposition mask manufacturing method for forming a deposition layer on a deposition target substrate provided with a plurality of active regions in which a plurality of sub-pixels are formed.
  • the mask is provided with an effective portion including a plurality of vapor deposition holes so as to straddle the plurality of active regions, and the effective region includes a first region having a shape corresponding to one of the plurality of active regions.
  • a second region that defines the shape of the first region, and a plurality of vapor deposition holes included in the second region are open. It is shielded by the non-opening portion of the disk.
  • the second mask frame is replaced without replacing the first mask frame.
  • a second mask frame having an open mask whose portion overlapping the second area is a rectangular frame shape is selected, and the active area is irregular
  • a second mask frame having an open mask whose portion overlapping the second region has the shape of a deformed frame is selected.
  • the first mask frame and the second mask frame are joined so that the first mask frame is located on the deposition target substrate side.
  • the present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.
  • Evaporation mask 8 FMM frame 9, 9a, 9b Open mask frame 82 FMM (fine metal mask) 83 Effective portion 92, 92a, 92b Open mask 93, 93a, 93b Open portion 94, 94a, 94b Non-opening portion AA, AAa, AAb Active region EG, EGa, EGb Edge EGr Round corner edge EGn Notch edge SB Deposition substrate SC screw

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un masque de dépôt en phase vapeur (7) pour former une couche de dépôt en phase vapeur sur un substrat cible de dépôt en phase vapeur pourvu : d'un cadre FMM (8) dans lequel un FMM (82) est disposé ; et d'un cadre de masque ouvert (9) dans lequel est disposé un masque ouvert (92) qui comprend une section sans ouverture (94) et une pluralité de sections d'ouverture (93) correspondant à une pluralité de régions actives, une section efficace (83) comprenant une pluralité de trous de dépôt en phase vapeur étant disposée dans le FMM de façon à s'étendre sur la pluralité de régions actives et le cadre FMM et le cadre de masque ouvert sont joints l'un à l'autre de manière chevauchante.
PCT/JP2018/013265 2018-03-29 2018-03-29 Masque de dépôt en phase vapeur et procédé de fabrication de masque de dépôt en phase vapeur Ceased WO2019186902A1 (fr)

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PCT/JP2018/013265 WO2019186902A1 (fr) 2018-03-29 2018-03-29 Masque de dépôt en phase vapeur et procédé de fabrication de masque de dépôt en phase vapeur

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PCT/JP2018/013265 WO2019186902A1 (fr) 2018-03-29 2018-03-29 Masque de dépôt en phase vapeur et procédé de fabrication de masque de dépôt en phase vapeur

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003231961A (ja) * 2002-02-12 2003-08-19 Seiko Epson Corp マスク、電気光学装置及び有機ｅｌ装置の製造方法、有機ｅｌ装置の製造装置並びに電子機器
JP2012023026A (ja) * 2010-07-12 2012-02-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
JP2015059262A (ja) * 2013-09-20 2015-03-30 株式会社ブイ・テクノロジー 成膜マスク及びタッチパネル基板
JP2015200019A (ja) * 2014-03-31 2015-11-12 大日本印刷株式会社 蒸着マスクの引張方法、フレーム付き蒸着マスクの製造方法、有機半導体素子の製造方法、及び引張装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003231961A (ja) * 2002-02-12 2003-08-19 Seiko Epson Corp マスク、電気光学装置及び有機ｅｌ装置の製造方法、有機ｅｌ装置の製造装置並びに電子機器
JP2012023026A (ja) * 2010-07-12 2012-02-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
JP2015059262A (ja) * 2013-09-20 2015-03-30 株式会社ブイ・テクノロジー 成膜マスク及びタッチパネル基板
JP2015200019A (ja) * 2014-03-31 2015-11-12 大日本印刷株式会社 蒸着マスクの引張方法、フレーム付き蒸着マスクの製造方法、有機半導体素子の製造方法、及び引張装置

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