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WO2019186893A1 - Display device production method - Google Patents

Display device production method Download PDF

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Publication number
WO2019186893A1
WO2019186893A1 PCT/JP2018/013247 JP2018013247W WO2019186893A1 WO 2019186893 A1 WO2019186893 A1 WO 2019186893A1 JP 2018013247 W JP2018013247 W JP 2018013247W WO 2019186893 A1 WO2019186893 A1 WO 2019186893A1
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WO
WIPO (PCT)
Prior art keywords
layer
support substrate
display device
display
side end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/013247
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French (fr)
Japanese (ja)
Inventor
渡辺 典子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
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Sharp Corp
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Priority to PCT/JP2018/013247 priority Critical patent/WO2019186893A1/en
Publication of WO2019186893A1 publication Critical patent/WO2019186893A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • H10K59/8731Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present invention relates to a method for manufacturing a display device.
  • a display functional layer for example, a resin layer made of polyimide or the like, a barrier layer, a thin film transistor layer, a light emitting element layer, on a supporting substrate such as glass, etc., through a release layer that is altered by light. And a sealing layer, and a laminated structure including a top film and the like as required) are laminated to form a mother laminate.
  • the display layer is separated into a plurality of pieces after separating the support substrate and the display function layer by irradiating light to alter the peeling layer.
  • the mother laminate is cut and divided into a plurality of pieces, and then the support substrate and the display functional layer are separated by light irradiation.
  • a foldable flexible display device in which circuits such as various elements and wirings are mounted on a flexible resin layer such as polyimide can be obtained (for example, see Patent Document 1).
  • Japanese Patent Publication Japanese Patent Laid-Open No. 2017-208254 (published on November 24, 2017)
  • the mother laminated body is cut and divided into a plurality of pieces, and then the support substrate and the display functional layer are separated, there is an advantage in that accurate alignment is easy.
  • the support substrate and the display functional layer are separated from each other by irradiating light from the support substrate side, the light is reflected and scattered by the glass end surface of the support substrate. It has been found that a problem may occur that the support substrate and the display functional layer cannot be separated while being bonded.
  • one embodiment of the present invention has been made in view of the above problems, and an object thereof is to provide a method for manufacturing a display device that facilitates separation of a support substrate and a display functional layer and improves yield.
  • a method for manufacturing a display device includes a stacking step of stacking a display functional layer on a support substrate, and a cutting step of cutting the display functional layer together with the support substrate into a plurality of pieces.
  • a method for manufacturing a display device comprising: an irradiation step of irradiating light from the support substrate side; and a separation step of separating the support substrate and the display functional layer, wherein the support substrate is provided at a peripheral portion of the individual piece.
  • the display function after the laminating step and before the irradiating step so as to be exposed or so that the supporting substrate is exposed inside the priority portion along the peripheral edge of the piece.
  • the method further includes a removing step of partially removing the layer.
  • the support substrate and the display functional layer can be easily separated, and the yield can be improved.
  • FIG. 1 It is a flowchart which shows an example of the manufacturing method of a display device. It is a figure explaining an example of the manufacturing method of a display device, (a) is sectional drawing after a lamination process and a removal process, (b) is sectional drawing after a division
  • lower layer means that it is formed in a process prior to the layer to be compared
  • upper layer means that it is formed in a process after the layer to be compared. means.
  • FIGS. 1 to 6 The embodiment of the present disclosure will be described with reference to FIGS. 1 to 6 as follows.
  • components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.
  • the display device manufacturing method includes a stacking step of stacking a display function layer on a support substrate, a cutting step of cutting the display function layer together with the support substrate to divide the display function layer into a plurality of pieces, and a support substrate side. Including an irradiation step of irradiating light and a separation step of separating the support substrate and the display functional layer, and after the lamination step and the irradiation step so that the support substrate is exposed along the peripheral edge of the piece. Before the step, a removal step of partially removing the display function layer is further included.
  • the display function layer in a portion corresponding to the peripheral edge of the piece is partially removed before the separation process, thereby allowing a subsequent separation process.
  • the support substrate and the display functional layer can be easily and reliably separated. That is, by removing in advance the display function layer corresponding to the entire peripheral edge of the piece, it is possible to prevent the occurrence of separation failure near the end of the piece.
  • Embodiment 1 in the piece obtained after the dividing step, the display function layer is formed over the entire periphery of the end of the piece so that the side end of the display function layer is located inside the side end of the support substrate. Has been removed.
  • the individual pieces in such a state are formed by forming slits having a predetermined width in the display function layer along the dividing line of the mother laminated body, and then cutting the mother laminated body along the dividing line. And can be manufactured by dividing into a plurality of pieces.
  • the mother laminated body is cut along a dividing line and divided into a plurality of pieces, and then the display functional layer is removed and the support substrate is exposed over the entire circumference of the end of each piece. be able to.
  • FIG. 1 is a flowchart showing an example of a display device manufacturing method according to the present embodiment.
  • FIG. 2 is a diagram for explaining an example of a method for manufacturing a display device according to the present embodiment.
  • 3A is a plan view showing an example of a display device before the separation step according to the present embodiment
  • FIG. 3B is a cross-sectional view of the cross section A
  • FIG. 3C is a cross-sectional view of the cross section B.
  • FIG. 6 is a cross-sectional view illustrating a configuration example of the display area of the display device.
  • the display functional layer 13 is laminated on the translucent support substrate 1 to form the mother laminate 6.
  • Step S1 lamination process.
  • a slit 4 having a predetermined width is formed in the display function layer 13 along the dividing line 7 of the mother laminated body 6 so that the support substrate 1 at the peripheral edge of the divided piece is exposed (step S2). , Removal step).
  • the mother laminate 6 is cut along the dividing line 7 and divided into a plurality of pieces (step S3, a dividing step). At this time, since it is divided so that the outer wall of the slit 4 (the outer wall of the piece) is removed, the support substrate 1 is exposed at the peripheral edge of the piece.
  • step S4 mounting process
  • step S5 light is irradiated from the support substrate 1 side
  • step S6 separation step
  • steps S1 to S6 can be performed using a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).
  • step S2 retractal process
  • step S3 parting process
  • the lamination step is a step of forming the mother laminated body 6 by laminating the display function layer 13 on one surface of the support substrate 1 that is mother glass via a release layer (not shown).
  • the support substrate 1 is a support body that tentatively supports the display function layer 13 and may have a strength necessary for preventing the display function layer from being damaged or deformed.
  • a substrate having optical transparency is used as the support substrate 1. Thereby, when light is irradiated from the support substrate 1 side in the subsequent irradiation step, this light passes through the support substrate 1 and reaches the resin layer.
  • the support substrate for example, a glass substrate and a plastic substrate made of an acrylic resin or the like can be used.
  • the release layer may be made of a conventional material that changes in quality by absorbing light irradiated through the support substrate 1. By sufficiently absorbing and changing the light, the peeling layer loses its strength or adhesiveness before light irradiation, and is easily destroyed by applying a slight external force, so that the support substrate 1 and the display function layer 13 can be easily formed. Can be separated. Note that although a mode in which a release layer is provided is described in this embodiment, the present invention is not limited to such a mode, and a release layer may not be provided. For example, if the supporting substrate is a plastic substrate, laser separation can be performed together with the laminate, so that a release layer is not necessary.
  • the display function layer 13 is a layer including the laminated structure 2 that exhibits a function of displaying an image. More specifically, a laminated structure 2 including a resin layer 112, a barrier layer 103, a thin film transistor (TFT) layer 104, a light emitting element layer 105, and a sealing layer 106 laminated on the support substrate 1, and if necessary, This is a layer including the upper film 3 that protects the laminated structure 2.
  • the top film 3 may be in a range that can cover at least a part of the laminated structure 2.
  • the resin layer 112 adjacent to the support substrate 1, the barrier layer 103, the thin film transistor layer 104, the light emitting element layer 105, the sealing layer 106, and the top film 3 are stacked in this order.
  • the side end portions of the resin layer 112 are laminated so as to be positioned outside the side end portions of the TFT layer 104, the light emitting element layer 105, the sealing layer 106, and the top film 3.
  • the barrier layer 103 may be outside the side end portion of the resin layer 112, and the side end portion of the resin layer 112 may be located outside the barrier layer 103.
  • the barrier layer 103 may be formed so as to cover the entire resin layer. Thereby, it is possible to prevent the resin from absorbing moisture in a wet process of TFT formation.
  • the removing step is a step of removing the display functional layer 13 so that the support substrate 1 is exposed over the entire periphery of the end portion of the piece obtained by dividing the mother laminate 6.
  • a slit 4 having a predetermined width is formed in the display function layer 13 along the dividing line 7 of the mother laminate 6.
  • the display function layer 13 may be removed over the entire periphery of the end portion of the obtained piece after the mother laminate 6 is divided in the dividing step described later.
  • the support substrate 1 being exposed by removing the display functional layer 13 in the removing step, as shown in FIGS. 2B and 3A to 3C, the side edges of the individual display functional layer 13 are obtained.
  • the portion is located inside the side end portion of the support substrate 1. Thereby, the separation failure of the support substrate 1 and the display functional layer 13 in the vicinity of the end of the piece can be prevented.
  • the separation distance 9 between the side edge of the individual display function layer 13 and the side edge of the support substrate 1 reduces the distance between the panels in order to increase the number of panels obtained from one support substrate. From the viewpoint, it is preferably 1 mm or less. Further, the separation distance 9 between the side end portion of the individual display function layer 13 and the side end portion of the support substrate 1 is 0.2 mm or more from the viewpoint of avoiding the influence of laser light scattering at the glass end portion. It is preferable that
  • the display functional layer 13 can be removed by irradiating a portion to be removed with laser light.
  • a conventional laser such as a CO 2 laser, a UV laser, and a YAG laser can be used. From the viewpoint of cost and accuracy, a CO 2 laser and a UV laser can be particularly preferably used.
  • the dividing step is a step of cutting the mother laminated body 6 along the dividing line 7 and dividing it into a plurality of pieces.
  • mechanical cutting using a diamond wheel or laser cutting is used for cutting the mother laminated body 6, for example.
  • laser a CO 2 laser can be used.
  • the mounting process is performed in the mounting area 8 (for example, the terminal portion) of the display function layer 13 on the mounting member 10 (for example, the IC chip and the FPC) as necessary.
  • the mounting member 10 for example, the IC chip and the FPC
  • the display function layer 13 is previously removed in the above-described removing process so that the support substrate 1 is exposed over the entire periphery of the end of each piece. Thereby, in the subsequent separation process, it is possible to prevent separation failure between the support substrate 1 and the display function layer 13 at the individual end portion located below the mounting member 10 and to separate them easily and reliably.
  • the irradiation process is a process of irradiating light from the support substrate 1 side as shown in FIG.
  • laser light absorbed by the resin layer that is, excimer laser, Nd: YVO 4 laser, Yb: YAG laser, or the like can be used.
  • laser light having a wavelength that causes alteration of the release layer, flash lamp light, or the like can be used depending on the type of the release layer. .
  • the display function layer 13 at the individual piece end has already been removed before the irradiation step, so even if the resin layer and the release layer at the end of the individual piece are not sufficiently altered. In the subsequent separation step, the support substrate 1 and the display function layer 13 can be easily and reliably separated.
  • the separation step is a step of obtaining the display device 11 by separating the support substrate 1 and the display functional layer 13 as shown in FIG.
  • a lower film 100 such as a polyethylene terephthalate (PET) film may be attached to the lower surface of the laminated structure 2 of the display function layer 13 as shown in FIG. .
  • PET polyethylene terephthalate
  • the manufacturing method according to this embodiment is performed after the lamination process and before the irradiation process, for example, before the removal process. It may further include a cutting step of making a cut 5 at a predetermined position. Further, after the cutting step and before the mounting step, a peeling step of peeling the upper surface film 3 covering the mounting region 8 along the notch 5 may be further included. In the mounting region 8 exposed after the peeling process, for example, the mounting member 10 such as an electronic circuit board can be mounted on a terminal formed by any metal layer at an end portion of the TFT layer 104 described later.
  • the cutting step can be performed by irradiating a laser beam to a portion where the cut 5 is to be made.
  • a laser a conventional laser such as a CO 2 laser, a UV laser, or a YAG laser can be used.
  • a cut 5 is formed in the upper film 3 by irradiating a predetermined position with laser light from the upper film 3 side of the mother laminate 6 with a weak output (cut process).
  • the slit 4 is formed in the upper surface film 3 and the laminated structure 2 therebelow by irradiating the position of the dividing line 7 with a stronger output with laser light (removal step).
  • the mother laminated body 6 is cut along the cutting line 7 to be divided into a plurality of pieces (cutting process), and the top film 3 covering the mounting region 8 is peeled from the cut 5. (Peeling process).
  • the mounting member 10 is mounted on the exposed mounting region 8 (mounting process).
  • regions other than the mounting region 8 it is preferable to leave the top film 3 until the separation step is completed. Thereby, the handleability in the subsequent steps can be improved, and adhesion of dust and the like can be prevented.
  • the display device 11 manufactured by the manufacturing method according to this embodiment includes a resin layer 112, a barrier layer 103, a thin film transistor (TFT) layer 104, a light emitting element layer 105, and a sealing layer 106. It has a structure.
  • TFT thin film transistor
  • the material of the resin layer 112 examples include polyimide.
  • the resin layer portion can be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.
  • the barrier layer 103 is a layer that prevents foreign substances such as water and oxygen from entering the TFT layer 104 and the light emitting element layer 105.
  • the barrier layer 103 is formed by a CVD method, such as a silicon oxide film, a silicon nitride film, or an oxynitride.
  • a silicon film or a laminated film thereof can be used.
  • the TFT layer 104 includes a semiconductor film 115, an inorganic insulating film 116 (gate insulating film) above the semiconductor film 115, a gate electrode GE and a gate wiring GH above the inorganic insulating film 116, a gate electrode GE, An inorganic insulating film 118 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 118, an inorganic insulating film 120 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 120 And a planarizing film 121 (interlayer insulating film), which is an upper layer than the source wiring SH.
  • a planarizing film 121 interlayer insulating film
  • the semiconductor film 115 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (eg, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 115 and the gate electrode GE. Is done.
  • the transistor is shown with a top gate structure, but may have a bottom gate structure.
  • the gate electrode GE, the gate wiring GH, the capacitor electrode CE, and the source wiring SH are configured by, for example, a metal single layer film or a stacked film including at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper.
  • the TFT layer 104 in FIG. 6 includes one semiconductor layer and three metal layers.
  • the inorganic insulating films 116, 118, and 120 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method.
  • the planarization film 121 can be made of an applicable organic material such as polyimide or acrylic.
  • the light emitting element layer 105 includes an anode 122 that is an upper layer than the planarizing film 121, an insulating edge cover 123 that covers the edge of the anode 122, an EL (electroluminescence) layer 124 that is an upper layer than the edge cover 123, and an EL layer And a cathode 125 higher than 124.
  • the edge cover 123 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.
  • a light-emitting element ES for example, OLED: organic light-emitting diode, QLED: quantum dot light-emitting diode
  • ES for example, OLED: organic light-emitting diode
  • QLED quantum dot light-emitting diode
  • a sub-pixel circuit for controlling ES is formed in the TFT layer 104.
  • the EL layer 124 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side.
  • the light emitting layer is formed in an island shape in the opening (for each subpixel) of the edge cover 123 by an evaporation method or an ink jet method.
  • the other layers are formed in an island shape or a solid shape (common layer).
  • the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.
  • FMM fine metal mask
  • the FMM is a sheet having a large number of openings (for example, made of Invar), and an island-shaped light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening.
  • the light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one subpixel) by, for example, applying a solvent in which quantum dots are diffused by inkjet.
  • the anode 122 is composed of, for example, a laminate of ITO (IndiumITOTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity.
  • the cathode (cathode) 125 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).
  • the light-emitting element ES is an OLED
  • holes and electrons are recombined in the light-emitting layer by a driving current between the anode 122 and the cathode 125, and light is emitted in the process in which the excitons generated thereby transition to the ground state.
  • the cathode 125 is light-transmitting and the anode 122 is light-reflective, the light emitted from the EL layer 124 is directed upward and becomes top emission.
  • the light-emitting element ES is a QLED
  • holes and electrons are recombined in the light-emitting layer due to the driving current between the anode 122 and the cathode 125, and the excitons generated thereby are conduction band levels of the quantum dots.
  • Light (fluorescence) is emitted in the process of transition from valence band level to valence band.
  • a light emitting element inorganic light emitting diode or the like
  • the OLED and QLED may be formed.
  • the sealing layer 106 is translucent, and includes an inorganic sealing film 126 that covers the cathode 125, an organic buffer film 127 that is above the inorganic sealing film 126, and an inorganic sealing film 128 that is above the organic buffer film 127. Including.
  • the sealing layer 106 covering the light emitting element layer 105 prevents penetration of foreign matters such as water and oxygen into the light emitting element layer 105.
  • Each of the inorganic sealing film 126 and the inorganic sealing film 128 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked film thereof formed by a CVD method. be able to.
  • the organic buffer film 127 is a light-transmitting organic film having a flattening effect, and can be formed of a coatable organic material such as acrylic.
  • the organic buffer film 127 can be formed by, for example, inkjet coating, but a bank for stopping the liquid droplets may be provided in the non-display area.
  • a bottom film 110 shown in FIG. 6 is, for example, a PET film for realizing a display device with excellent flexibility by being attached to the bottom surface of the resin layer 112 after peeling the support substrate 1. 6 has at least one of an optical compensation function, a touch sensor function, and a protection function, for example.
  • Embodiment 2 Next, Embodiment 2 of the present invention will be described based on FIGS.
  • This embodiment (Embodiment 2) is carried out in the positional relationship between the portion of the display function layer 13 to be removed in the removal step and the dividing line 7 of the mother laminated body 6 (that is, the end portion of the piece obtained after dividing). Unlike the first embodiment, the other points are as described in the first embodiment.
  • each member has the same configuration as that of the first embodiment, description thereof is omitted.
  • the removing step for forming the slit 4 having a predetermined width in the display function layer 13 (FIG. 4 (FIG. 4B).
  • c) is performed, as described in the first embodiment, these may be performed by changing the order.
  • the removing step is performed along the peripheral edge of the piece obtained by dividing the mother laminate 6.
  • This is a slit forming step of forming a slit in the display function layer 13 so that the slit 4 is located inside (so that the outer wall of the slit 4 is maintained and the slit shape remains, unlike the first embodiment).
  • the side end of the individual display function layer 13 and the side end of the individual support substrate 1 are at the same position, that is, the dividing line 7. Will be located on top.
  • the slit 4 in which the support substrate 1 is exposed is present on the inner side, it is possible to prevent the occurrence of separation failure in the vicinity of the end portions of the individual pieces in the subsequent separation step.
  • the guide 12 on the frame made of the display function layer 13 is formed at the peripheral portion of the piece.
  • the display device 11 may be peeled off by adsorption after the irradiation process. After being singulated as in this embodiment, peeling by adsorption is easier to perform.
  • the display function layer 13 between the guide 12 portion, that is, the end of the piece and the slit 4 is removed, and the entire end of the piece is the same as in the first embodiment.
  • the display functional layer 13 may be removed over the circumference.
  • the separation distance between the side edges of the support substrate 1 and the display function layer 13 and the inner edge of the slit 4 is determined by the laser. From the viewpoint of reliable irradiation, the width should be small. For example, it is preferably 1 mm or less, and may be set as appropriate depending on the type of laser. For example, it is about 100 ⁇ m for a CO 2 laser and about 50 ⁇ m for a UV picosecond laser.
  • a method for manufacturing a display device comprising a separation step of separating the support substrate and the display functional layer, After the laminating step, the irradiation is performed so that the support substrate is exposed at the peripheral portion of the piece or the support substrate is exposed inside the priority portion along the peripheral portion.
  • a method for manufacturing a display device further comprising a removing step of partially removing the display functional layer before the step.
  • the display function layer is partially removed in the removing step so that the side end portion of the display function layer of the piece is positioned inside the side end portion of the support substrate of the piece, for example, the aspect 1 or 3.
  • the removing step is a slit forming step of forming a slit having a predetermined width in the display function layer,
  • the slits are formed so that the side end portions of the display functional layer of the individual pieces and the side end portions of the support substrate of the individual pieces are at the same position, and the slits are positioned inside these side end portions.
  • the method further includes a step of removing the display functional layer between the side end portion of the individual display functional layer and the slit, for example, the aspect 5 or 7.
  • the laminating step includes laminating a resin layer, a barrier layer, a thin film transistor layer, a light emitting element layer, a sealing layer, and a top film adjacent to the support substrate in this order, and a side end portion of the resin layer is formed of the thin film transistor.
  • the said resin layer is a manufacturing method of the display device of the aspect 8, for example which is a layer which consists of polyimides.
  • a cutting step for cutting the upper surface film, a peeling step for peeling the upper surface film covering the mounting region, and a mounting member on the exposed mounting region Further includes a mounting step of mounting The display device manufacturing method according to, for example, the aspect 8 or 9, wherein the mounting step is performed after the removing step.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

The invention comprises: a layering step of layering a display function layer (2, 3) on a support substrate (1); a dicing step of dicing the display function layer, together with the support substrate, into a plurality of individual pieces; an irradiating step of irradiating with light from the support substrate side; and a separation step of separating the support substrate and the display function layer from each other. The invention further comprises a removal step of removing the display function layer partially, after the layering step and before the irradiation step, in such a manner that the support substrate is exposed at a peripheral edge portion in each of the individual pieces or in such a manner that the support substrate is exposed inwardly of the priority portion along the peripheral edge portion in each of the individual pieces.

Description

表示デバイスの製造方法Display device manufacturing method

 本発明は、表示デバイスの製造方法に関する。 The present invention relates to a method for manufacturing a display device.

 フレキシブル表示デバイスの製造方法では、例えば、ガラス等の支持基板上に、光によって変質する剥離層を介して、表示機能層(例えば、ポリイミド等からなる樹脂層、バリア層、薄膜トランジスタ層、発光素子層及び封止層、並びに必要に応じて上面フィルム等を含む積層構造)を積層してマザー積層体を形成する。次いで、光を照射して剥離層を変質させることにより、支持基板と表示機能層とを分離後、表示機能層を複数の個片に分断する。あるいは、マザー積層体を切断して複数の個片に分断後、光の照射によって支持基板と表示機能層とを分離する。これにより、ポリイミド等の可撓性樹脂層上に各種素子や配線等の回路が実装された、折り曲げ可能なフレキシブル表示デバイスを得ることができる(例えば、特許文献1参照)。 In a method for producing a flexible display device, for example, a display functional layer (for example, a resin layer made of polyimide or the like, a barrier layer, a thin film transistor layer, a light emitting element layer, on a supporting substrate such as glass, etc., through a release layer that is altered by light. And a sealing layer, and a laminated structure including a top film and the like as required) are laminated to form a mother laminate. Next, the display layer is separated into a plurality of pieces after separating the support substrate and the display function layer by irradiating light to alter the peeling layer. Alternatively, the mother laminate is cut and divided into a plurality of pieces, and then the support substrate and the display functional layer are separated by light irradiation. Thereby, a foldable flexible display device in which circuits such as various elements and wirings are mounted on a flexible resin layer such as polyimide can be obtained (for example, see Patent Document 1).

日本国公開特許公報「特開2017-208254号公報」(2017年11月24日公開)Japanese Patent Publication “Japanese Patent Laid-Open No. 2017-208254” (published on November 24, 2017)

 上記の製造方法のうち、支持基板と表示機能層とを分離後に、表示機能層を複数の個片に分断する場合は、可撓性の樹脂フィルム上で実装等を行う際に、樹脂フィルムの伸縮があるために精密な位置合わせが困難になるという問題が生じ得る。 Among the above manufacturing methods, after separating the support substrate and the display functional layer, when the display functional layer is divided into a plurality of pieces, when mounting on the flexible resin film, the resin film There is a problem that precise alignment becomes difficult due to expansion and contraction.

 一方、マザー積層体を切断して複数の個片に分断してから、支持基板と表示機能層とを分離する場合は、精確な位置合わせが容易である点において利点を有する。しかしながら、支持基板側から光を照射することによって、支持基板と表示機能層とを分離する際に、光が支持基板のガラス端面で反射・散乱するために、個片の端部付近において分離不全が発生し、支持基板と表示機能層とが接着したまま分離できないという問題が生じ得ることが分かった。 On the other hand, when the mother laminated body is cut and divided into a plurality of pieces, and then the support substrate and the display functional layer are separated, there is an advantage in that accurate alignment is easy. However, when the support substrate and the display functional layer are separated from each other by irradiating light from the support substrate side, the light is reflected and scattered by the glass end surface of the support substrate. It has been found that a problem may occur that the support substrate and the display functional layer cannot be separated while being bonded.

 そこで、本発明の一態様は、上記の問題点に鑑みてなされたものであり、支持基板と表示機能層との分離を容易にし、歩留りが向上した表示デバイスの製造方法を提供することを目的とする。 Therefore, one embodiment of the present invention has been made in view of the above problems, and an object thereof is to provide a method for manufacturing a display device that facilitates separation of a support substrate and a display functional layer and improves yield. And

 本発明の一態様に係る表示デバイスの製造方法は、支持基板上に表示機能層を積層する積層工程と、前記表示機能層を前記支持基板と共に切断して複数の個片に分断する分断工程と、前記支持基板側から光を照射する照射工程と、前記支持基板と前記表示機能層とを分離する分離工程とを含む表示デバイスの製造方法であって、前記個片の周縁部に支持基板が露出するように、又は、前記個片の周縁部に沿って当該優先部より内側に前記支持基板が露出するように、前記積層工程の後であって且つ前記照射工程の前に、前記表示機能層を部分的に除去する除去工程を更に含むことを特徴とする。 A method for manufacturing a display device according to one embodiment of the present invention includes a stacking step of stacking a display functional layer on a support substrate, and a cutting step of cutting the display functional layer together with the support substrate into a plurality of pieces. A method for manufacturing a display device, comprising: an irradiation step of irradiating light from the support substrate side; and a separation step of separating the support substrate and the display functional layer, wherein the support substrate is provided at a peripheral portion of the individual piece. The display function after the laminating step and before the irradiating step so as to be exposed or so that the supporting substrate is exposed inside the priority portion along the peripheral edge of the piece. The method further includes a removing step of partially removing the layer.

 本発明の一態様によれば、支持基板と表示機能層との分離を容易にし、歩留りを向上させることができる。 According to one embodiment of the present invention, the support substrate and the display functional layer can be easily separated, and the yield can be improved.

表示デバイスの製造方法の一例を示すフローチャートである。It is a flowchart which shows an example of the manufacturing method of a display device. 表示デバイスの製造方法の一例を説明する図であり、(a)は積層工程及び除去工程後の断面図であり、(b)は分割工程後の断面図であり、(c)は実装工程後の断面図であり、(d)は照射工程の断面図であり、(e)は分離工程後の断面図である。It is a figure explaining an example of the manufacturing method of a display device, (a) is sectional drawing after a lamination process and a removal process, (b) is sectional drawing after a division | segmentation process, (c) is after a mounting process. (D) is sectional drawing of an irradiation process, (e) is sectional drawing after a isolation | separation process. (a)は分離工程前の表示デバイスの一例を示す平面図であり、(b)は断面Aの断面図であり、(c)は断面Bの断面図である。(A) is a top view which shows an example of the display device before a separation process, (b) is sectional drawing of the cross section A, (c) is sectional drawing of the cross section B. FIG. 表示デバイスの製造方法の一例を説明する図であり、(a)は積層工程後の断面図であり、(b)は分割工程後の断面図であり、(c)は除去工程後の断面図であり、(d)は実装工程後の断面図であり、(e)は照射工程の断面図であり、(f)は分離工程後の断面図である。It is a figure explaining an example of the manufacturing method of a display device, (a) is sectional drawing after a lamination process, (b) is sectional drawing after a division | segmentation process, (c) is sectional drawing after a removal process (D) is a cross-sectional view after the mounting step, (e) is a cross-sectional view after the irradiation step, and (f) is a cross-sectional view after the separation step. (a)は分離工程前の表示デバイスの一例を示す平面図であり、(b)は断面Aの断面図であり、(c)は断面Bの断面図である。(A) is a top view which shows an example of the display device before a separation process, (b) is sectional drawing of the cross section A, (c) is sectional drawing of the cross section B. FIG. 表示デバイスの表示領域の構成例を示す断面図である。It is sectional drawing which shows the structural example of the display area of a display device.

 以下においては、「下層」とは、比較対象の層よりも先のプロセスで形成されていることを意味し、「上層」とは比較対象の層よりも後のプロセスで形成されていることを意味する。 In the following, “lower layer” means that it is formed in a process prior to the layer to be compared, and “upper layer” means that it is formed in a process after the layer to be compared. means.

 本開示の実施の形態について図1から図6に基づいて説明すれば、次の通りである。以下、説明の便宜上、特定の実施形態にて説明した構成と同一の機能を有する構成については、同一の符号を付記し、その説明を省略する場合がある。 The embodiment of the present disclosure will be described with reference to FIGS. 1 to 6 as follows. Hereinafter, for convenience of explanation, components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.

 〔実施形態1〕
 本発明に係る表示デバイスの製造方法は、支持基板上に表示機能層を積層する積層工程と、表示機能層を支持基板と共に切断して複数の個片に分断する分断工程と、支持基板側から光を照射する照射工程と、支持基板と表示機能層とを分離する分離工程とを含み、個片の周縁部に沿って支持基板が露出するように、積層工程の後であって且つ照射工程の前に、表示機能層を部分的に除去する除去工程を更に含むものである。
Embodiment 1
The display device manufacturing method according to the present invention includes a stacking step of stacking a display function layer on a support substrate, a cutting step of cutting the display function layer together with the support substrate to divide the display function layer into a plurality of pieces, and a support substrate side. Including an irradiation step of irradiating light and a separation step of separating the support substrate and the display functional layer, and after the lamination step and the irradiation step so that the support substrate is exposed along the peripheral edge of the piece. Before the step, a removal step of partially removing the display function layer is further included.

 積層工程後且つ照射工程前のいずれかの段階において、例えば、分断工程の前に、個片の周縁部に相当する部分の表示機能層を部分的に除去しておくことにより、後の分離工程において、支持基板と表示機能層との分離を容易且つ確実に行うことができる。すなわち、個片の全周縁部に相当する部分の表示機能層を予め除去しておくことにより、個片の端部付近における分離不全の発生を防ぐことができる。 At any stage after the lamination process and before the irradiation process, for example, the display function layer in a portion corresponding to the peripheral edge of the piece is partially removed before the separation process, thereby allowing a subsequent separation process. In this case, the support substrate and the display functional layer can be easily and reliably separated. That is, by removing in advance the display function layer corresponding to the entire peripheral edge of the piece, it is possible to prevent the occurrence of separation failure near the end of the piece.

 以下、本発明の一実施形態(実施形態1)について図1~3及び図6を参照して説明する。実施形態1では、分断工程後に得られる個片において、その表示機能層の側端部が支持基板の側端部より内側に位置するように、個片の端部の全周にわたって、表示機能層が除去されている。 Hereinafter, an embodiment (Embodiment 1) of the present invention will be described with reference to FIGS. 1 to 3 and FIG. In Embodiment 1, in the piece obtained after the dividing step, the display function layer is formed over the entire periphery of the end of the piece so that the side end of the display function layer is located inside the side end of the support substrate. Has been removed.

 このような状態の個片は、例えば、除去工程において、マザー積層体の分断ラインに沿って、表示機能層に所定幅のスリットを形成し、次いで、分断ラインに沿ってマザー積層体を切断して複数の個片に分断することにより、製造することができる。あるいは、分断ラインに沿ってマザー積層体を切断して複数の個片に分断した後に、個片の端部の全周にわたって、表示機能層を除去して支持基板を露出させることにより、製造することができる。 For example, in the removal step, the individual pieces in such a state are formed by forming slits having a predetermined width in the display function layer along the dividing line of the mother laminated body, and then cutting the mother laminated body along the dividing line. And can be manufactured by dividing into a plurality of pieces. Alternatively, the mother laminated body is cut along a dividing line and divided into a plurality of pieces, and then the display functional layer is removed and the support substrate is exposed over the entire circumference of the end of each piece. be able to.

 図1は、本実施形態に係る表示デバイスの製造方法の一例を示すフローチャートである。図2は、本実施形態に係る表示デバイスの製造方法の一例を説明する図である。図3(a)は、本実施形態に係る分離工程前の表示デバイスの一例を示す平面図であり、(b)は断面Aの断面図であり、(c)は断面Bの断面図である。図6は、表示デバイスの表示領域の構成例を示す断面図である。 FIG. 1 is a flowchart showing an example of a display device manufacturing method according to the present embodiment. FIG. 2 is a diagram for explaining an example of a method for manufacturing a display device according to the present embodiment. 3A is a plan view showing an example of a display device before the separation step according to the present embodiment, FIG. 3B is a cross-sectional view of the cross section A, and FIG. 3C is a cross-sectional view of the cross section B. . FIG. 6 is a cross-sectional view illustrating a configuration example of the display area of the display device.

 本実施形態に係る表示デバイスを製造する場合、図1~3及び図6に示すように、まず、透光性の支持基板1上に表示機能層13を積層して、マザー積層体6を形成する(ステップS1、積層工程)。次いで、個片に分断した個片の周縁部の支持基板1が露出するように、マザー積層体6の分断ライン7に沿って、表示機能層13に所定幅のスリット4を形成する(ステップS2、除去工程)。次いで、分断ライン7に沿ってマザー積層体6を切断して、複数の個片に分断する(ステップS3、分断工程)。このとき、スリット4の外壁(個片の外側の方の壁)が除かれるように分断するので、個片の周縁部に支持基板1が露出する。次いで、表示機能層の実装領域8に、実装部材10をマウントする(ステップS4、実装工程)。次いで、支持基板1側から光を照射する(ステップS5、照射工程)。次いで、支持基板1と表示機能層13とを分離して、表示デバイス11を得る(ステップS6、分離工程)。これらのステップS1~S6は、表示デバイス製造装置(ステップS1~S5の各工程を行う成膜装置を含む)を用いて実施することができる。なお、ステップS2(除去工程)とステップS3(分断工程)とは、順番を入れ替えて実施してもよい。すなわち、マザー積層体6を分断した後に、個片の端部の全周にわたって、表示機能層13を除去してもよい。 When manufacturing the display device according to this embodiment, as shown in FIGS. 1 to 3 and 6, first, the display functional layer 13 is laminated on the translucent support substrate 1 to form the mother laminate 6. (Step S1, lamination process). Next, a slit 4 having a predetermined width is formed in the display function layer 13 along the dividing line 7 of the mother laminated body 6 so that the support substrate 1 at the peripheral edge of the divided piece is exposed (step S2). , Removal step). Next, the mother laminate 6 is cut along the dividing line 7 and divided into a plurality of pieces (step S3, a dividing step). At this time, since it is divided so that the outer wall of the slit 4 (the outer wall of the piece) is removed, the support substrate 1 is exposed at the peripheral edge of the piece. Next, the mounting member 10 is mounted on the mounting area 8 of the display function layer (step S4, mounting process). Next, light is irradiated from the support substrate 1 side (step S5, irradiation step). Next, the support substrate 1 and the display function layer 13 are separated to obtain the display device 11 (Step S6, separation step). These steps S1 to S6 can be performed using a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5). In addition, you may implement step S2 (removal process) and step S3 (parting process) by changing order. That is, after dividing the mother laminated body 6, the display function layer 13 may be removed over the entire circumference of the end of each piece.

 (積層工程)
 積層工程は、マザーガラスである支持基板1の片面上に、剥離層(図示せず)を介して、表示機能層13を積層して、マザー積層体6を形成する工程である。
(Lamination process)
The lamination step is a step of forming the mother laminated body 6 by laminating the display function layer 13 on one surface of the support substrate 1 that is mother glass via a release layer (not shown).

 支持基板1は、表示機能層13を暫定的に支持する支持体であり、表示機能層の破損・変形を防ぐために必要な強度を有していればよい。支持基板1としては、光透過性を有するものを使用する。これにより、後の照射工程において、支持基板1側から光を照射したときに、この光が支持基板1を通過して樹脂層に到達する。支持基板1としては、例えば、ガラス基板、及び、アクリル樹脂等からなるプラスチック基板を使用することができる。 The support substrate 1 is a support body that tentatively supports the display function layer 13 and may have a strength necessary for preventing the display function layer from being damaged or deformed. As the support substrate 1, a substrate having optical transparency is used. Thereby, when light is irradiated from the support substrate 1 side in the subsequent irradiation step, this light passes through the support substrate 1 and reaches the resin layer. As the support substrate 1, for example, a glass substrate and a plastic substrate made of an acrylic resin or the like can be used.

 剥離層は、支持基板1を介して照射される光を吸収することによって変質する慣用の材料からなるものであってよい。光を十分に吸収して変質することにより、剥離層は、光の照射前の強度又は接着性を失い、僅かな外力を加えることにより破壊されて、支持基板1と表示機能層13とを容易に分離することができる。なお、本実施形態では剥離層を設ける形態について説明するが、本発明はこのような形態に限定されず、剥離層は設けなくてもよい。例えば、支持基板がプラスチック基板であれば、積層体とともにレーザ分断できるので、剥離層は不要である。 The release layer may be made of a conventional material that changes in quality by absorbing light irradiated through the support substrate 1. By sufficiently absorbing and changing the light, the peeling layer loses its strength or adhesiveness before light irradiation, and is easily destroyed by applying a slight external force, so that the support substrate 1 and the display function layer 13 can be easily formed. Can be separated. Note that although a mode in which a release layer is provided is described in this embodiment, the present invention is not limited to such a mode, and a release layer may not be provided. For example, if the supporting substrate is a plastic substrate, laser separation can be performed together with the laminate, so that a release layer is not necessary.

 表示機能層13は、画像を表示する機能を発揮する積層構造2を含む層である。より具体的には、支持基板1上に積層される樹脂層112、バリア層103、薄膜トランジスタ(TFT)層104、発光素子層105及び封止層106を含む積層構造2と、必要に応じて、この積層構造2を保護する上面フィルム3とを含む層である。上面フィルム3は、積層構造2の少なくとも一部をカバーできる範囲であればよい。また、積層工程では、支持基板1に隣接する樹脂層112、バリア層103、薄膜トランジスタ層104、発光素子層105、封止層106及び上面フィルム3を、この順に積層する。また、樹脂層112の側端部は、TFT層104、発光素子層105、封止層106及び上面フィルム3の側端部より外側に位置するように積層される。バリア層103は樹脂層112の側端部より外側でもよく、樹脂層112の側端部がバリア層103より外側に位置してもよい。また、例えば、バリア層103は、樹脂層全てを覆うように形成されてもよい。これにより、TFT形成のウェットプロセスなどで樹脂が吸湿するのを防ぐことができる。 The display function layer 13 is a layer including the laminated structure 2 that exhibits a function of displaying an image. More specifically, a laminated structure 2 including a resin layer 112, a barrier layer 103, a thin film transistor (TFT) layer 104, a light emitting element layer 105, and a sealing layer 106 laminated on the support substrate 1, and if necessary, This is a layer including the upper film 3 that protects the laminated structure 2. The top film 3 may be in a range that can cover at least a part of the laminated structure 2. In the stacking step, the resin layer 112 adjacent to the support substrate 1, the barrier layer 103, the thin film transistor layer 104, the light emitting element layer 105, the sealing layer 106, and the top film 3 are stacked in this order. Further, the side end portions of the resin layer 112 are laminated so as to be positioned outside the side end portions of the TFT layer 104, the light emitting element layer 105, the sealing layer 106, and the top film 3. The barrier layer 103 may be outside the side end portion of the resin layer 112, and the side end portion of the resin layer 112 may be located outside the barrier layer 103. For example, the barrier layer 103 may be formed so as to cover the entire resin layer. Thereby, it is possible to prevent the resin from absorbing moisture in a wet process of TFT formation.

 (除去工程)
 本実施形態において、除去工程は、マザー積層体6を分断して得られる個片の端部の全周にわたって支持基板1が露出するように、表示機能層13を除去する工程である。
(Removal process)
In the present embodiment, the removing step is a step of removing the display functional layer 13 so that the support substrate 1 is exposed over the entire periphery of the end portion of the piece obtained by dividing the mother laminate 6.

 より具体的には、例えば、図2(a)に示すように、マザー積層体6の分断ライン7に沿って、表示機能層13に所定幅のスリット4を形成する。あるいは、後述の分断工程においてマザー積層体6を分断した後に、得られる個片の端部の全周にわたって、表示機能層13を除去してもよい。 More specifically, for example, as shown in FIG. 2A, a slit 4 having a predetermined width is formed in the display function layer 13 along the dividing line 7 of the mother laminate 6. Alternatively, the display function layer 13 may be removed over the entire periphery of the end portion of the obtained piece after the mother laminate 6 is divided in the dividing step described later.

 除去工程において表示機能層13を除去することにより支持基板1が露出する結果、図2(b)及び図3(a)~(c)に示すように、個片の表示機能層13の側端部は、支持基板1の側端部より内側に位置することになる。これにより、個片の端部付近における支持基板1と表示機能層13との分離不全を防ぐことができる。 As a result of the support substrate 1 being exposed by removing the display functional layer 13 in the removing step, as shown in FIGS. 2B and 3A to 3C, the side edges of the individual display functional layer 13 are obtained. The portion is located inside the side end portion of the support substrate 1. Thereby, the separation failure of the support substrate 1 and the display functional layer 13 in the vicinity of the end of the piece can be prevented.

 個片の表示機能層13の側端部と、支持基板1の側端部との離間距離9は、1つの支持基板から得られるパネルの数を多くするために、パネル間の距離を狭くする観点から、1mm以下であることが好ましい。また、個片の表示機能層13の側端部と、支持基板1の側端部との離間距離9は、ガラス端部でのレーザ光の散乱の影響を回避する観点から、0.2mm以上であることが好ましい。 The separation distance 9 between the side edge of the individual display function layer 13 and the side edge of the support substrate 1 reduces the distance between the panels in order to increase the number of panels obtained from one support substrate. From the viewpoint, it is preferably 1 mm or less. Further, the separation distance 9 between the side end portion of the individual display function layer 13 and the side end portion of the support substrate 1 is 0.2 mm or more from the viewpoint of avoiding the influence of laser light scattering at the glass end portion. It is preferable that

 表示機能層13の除去は、除去する部分にレーザ光を照射することにより行うことができる。レーザとしては、COレーザ、UVレーザ、YAGレーザ等の慣用のレーザを用いることができるが、コストおよび精度の観点から、COレーザ及びUVレーザを特に好適に使用することができる。 The display functional layer 13 can be removed by irradiating a portion to be removed with laser light. As the laser, a conventional laser such as a CO 2 laser, a UV laser, and a YAG laser can be used. From the viewpoint of cost and accuracy, a CO 2 laser and a UV laser can be particularly preferably used.

 (分断工程)
 分断工程は、分断ライン7に沿ってマザー積層体6を切断して、複数の個片に分断する工程である。マザー積層体6の切断は、例えば、ダイヤモンドホイールを用いた機械的切断や、レーザ分断が用いられる。レーザとしては、COレーザを用いることができる。
(Partition process)
The dividing step is a step of cutting the mother laminated body 6 along the dividing line 7 and dividing it into a plurality of pieces. For cutting the mother laminated body 6, for example, mechanical cutting using a diamond wheel or laser cutting is used. As the laser, a CO 2 laser can be used.

 (実装工程)
 実装工程は、図2(b)及び(c)に示すように、必要に応じて、表示機能層13の実装領域8(例えば端子部)に、実装部材10(例えば、ICチップ及びFPC等の電子回路基板)をマウントする工程である。
(Mounting process)
As shown in FIGS. 2B and 2C, the mounting process is performed in the mounting area 8 (for example, the terminal portion) of the display function layer 13 on the mounting member 10 (for example, the IC chip and the FPC) as necessary. Electronic circuit board).

 なお、実装工程において実装部材10を実装する前に、上述の除去工程において、個片の端部の全周にわたって支持基板1が露出するように表示機能層13が予め除去される。これにより、その後の分離工程において、実装部材10の下部に位置する個片端部における支持基板1と表示機能層13との分離不全を防ぎ、これらを容易且つ確実に分離することができる。 In addition, before mounting the mounting member 10 in the mounting process, the display function layer 13 is previously removed in the above-described removing process so that the support substrate 1 is exposed over the entire periphery of the end of each piece. Thereby, in the subsequent separation process, it is possible to prevent separation failure between the support substrate 1 and the display function layer 13 at the individual end portion located below the mounting member 10 and to separate them easily and reliably.

 (照射工程)
 照射工程は、図2(d)に示すように、支持基板1側から光を照射する工程である。本工程において照射する光は、樹脂層に吸収されるレーザ光、すなわちエキシマレーザ、Nd:YVOレーザ、Yb:YAGレーザ等を用いることができる。また、支持基板と樹脂層の間に剥離層が設けられている場合には、剥離層の種類に応じて、剥離層の変質を引き起こす波長を有するレーザ光、フラッシュランプ光等を用いることができる。
(Irradiation process)
The irradiation process is a process of irradiating light from the support substrate 1 side as shown in FIG. As the light irradiated in this step, laser light absorbed by the resin layer, that is, excimer laser, Nd: YVO 4 laser, Yb: YAG laser, or the like can be used. Further, in the case where a release layer is provided between the support substrate and the resin layer, laser light having a wavelength that causes alteration of the release layer, flash lamp light, or the like can be used depending on the type of the release layer. .

 これらの光は、個片の支持基板1の端面で反射・散乱するため、支持基板1の端部上の樹脂層、剥離層には十分量の光が到達し難い。その結果、樹脂層、剥離層の変質が不十分になり得る。しかしながら、本実施形態においては、個片端部の表示機能層13は、照射工程の前に既に除去されているため、個片の端部における樹脂層、剥離層の変質が不十分であっても、続く分離工程において、支持基板1と表示機能層13とを容易且つ確実に分離することができる。 Since these lights are reflected and scattered by the end face of the individual support substrate 1, it is difficult for a sufficient amount of light to reach the resin layer and the release layer on the end of the support substrate 1. As a result, the alteration of the resin layer and the release layer may be insufficient. However, in the present embodiment, the display function layer 13 at the individual piece end has already been removed before the irradiation step, so even if the resin layer and the release layer at the end of the individual piece are not sufficiently altered. In the subsequent separation step, the support substrate 1 and the display function layer 13 can be easily and reliably separated.

 (分離工程)
 分離工程は、図2(e)に示すように、支持基板1と表示機能層13とを分離して、表示デバイス11を得る工程である。
(Separation process)
The separation step is a step of obtaining the display device 11 by separating the support substrate 1 and the display functional layer 13 as shown in FIG.

 表示機能層13から支持基板1を剥離した後で、図6に示すように、表示機能層13の積層構造2の下面に、ポリエチレンテレフタレート(PET)フィルム等の下面フィルム100を貼り付けてもよい。これにより、柔軟性に優れた表示デバイスを実現することができる。また、積層構造2を保護する上面フィルム3を剥がした後に、光学補償機能、タッチセンサ機能、保護機能等を有する機能フィルム139を貼り付けてもよい。 After peeling off the support substrate 1 from the display function layer 13, a lower film 100 such as a polyethylene terephthalate (PET) film may be attached to the lower surface of the laminated structure 2 of the display function layer 13 as shown in FIG. . Thereby, the display device excellent in flexibility can be realized. Moreover, after peeling off the upper surface film 3 which protects the laminated structure 2, you may affix the functional film 139 which has an optical compensation function, a touch sensor function, a protection function, etc.

 (その他の工程)
 本実施形態に係る製造方法は、図2(a)に示すように、積層工程の後であって且つ照射工程の前のいずれかの段階において、例えば、除去工程の前に、上面フィルム3の所定位置に切れ込み5を入れるカット工程を更に含んでいてもよい。また、このカット工程の後であって且つ実装工程の前に、切れ込み5に沿って実装領域8を覆う上面フィルム3を剥離する剥離工程を更に含んでいてもよい。剥離工程後に露出した実装領域8において、例えば、後述のTFT層104の端部における何れかの金属層によって形成された端子に、電子回路基板等の実装部材10を実装することができる。
(Other processes)
As shown in FIG. 2 (a), the manufacturing method according to this embodiment is performed after the lamination process and before the irradiation process, for example, before the removal process. It may further include a cutting step of making a cut 5 at a predetermined position. Further, after the cutting step and before the mounting step, a peeling step of peeling the upper surface film 3 covering the mounting region 8 along the notch 5 may be further included. In the mounting region 8 exposed after the peeling process, for example, the mounting member 10 such as an electronic circuit board can be mounted on a terminal formed by any metal layer at an end portion of the TFT layer 104 described later.

 カット工程は、切れ込み5を入れる部分にレーザ光を照射することにより行うことができる。レーザとしては、COレーザ、UVレーザ、YAGレーザ等の慣用のレーザを用いることができる。 The cutting step can be performed by irradiating a laser beam to a portion where the cut 5 is to be made. As the laser, a conventional laser such as a CO 2 laser, a UV laser, or a YAG laser can be used.

 より具体的な操作としては、例えば、マザー積層体6の上面フィルム3側から、弱い出力で所定位置にレーザ光を照射することにより、上面フィルム3に切れ込み5を形成する(カット工程)。次いで、より強い出力で分断ライン7の位置にレーザ光を照射することにより、上面フィルム3及びその下の積層構造2にスリット4を形成する(除去工程)。切れ込み5及びスリット4の形成後に、分断ライン7に沿ってマザー積層体6を切断して複数の個片に分断し(分断工程)、切れ込み5から、実装領域8を覆う上面フィルム3を剥離する(剥離工程)。次いで、露出した実装領域8に実装部材10を実装する(実装工程)。実装領域8以外の領域においては、分離工程が終了するまで、上面フィルム3を残しておくことが好ましい。これにより、その後の工程におけるハンドリング性を向上させ、また、埃等の付着を防ぐことができる。 As a more specific operation, for example, a cut 5 is formed in the upper film 3 by irradiating a predetermined position with laser light from the upper film 3 side of the mother laminate 6 with a weak output (cut process). Subsequently, the slit 4 is formed in the upper surface film 3 and the laminated structure 2 therebelow by irradiating the position of the dividing line 7 with a stronger output with laser light (removal step). After the formation of the cut 5 and the slit 4, the mother laminated body 6 is cut along the cutting line 7 to be divided into a plurality of pieces (cutting process), and the top film 3 covering the mounting region 8 is peeled from the cut 5. (Peeling process). Next, the mounting member 10 is mounted on the exposed mounting region 8 (mounting process). In regions other than the mounting region 8, it is preferable to leave the top film 3 until the separation step is completed. Thereby, the handleability in the subsequent steps can be improved, and adhesion of dust and the like can be prevented.

 (表示デバイス11の表示領域の構成)
 本実施形態に係る製造方法により製造される表示デバイス11は、図6に示すように、樹脂層112、バリア層103、薄膜トランジスタ(TFT)層104、発光素子層105及び封止層106を含む積層構造を有する。
(Configuration of display area of display device 11)
As shown in FIG. 6, the display device 11 manufactured by the manufacturing method according to this embodiment includes a resin layer 112, a barrier layer 103, a thin film transistor (TFT) layer 104, a light emitting element layer 105, and a sealing layer 106. It has a structure.

 樹脂層112の材料としては、例えばポリイミド等が挙げられる。樹脂層の部分を、二層の樹脂膜(例えば、ポリイミド膜)及びこれらに挟まれた無機絶縁膜で置き換えることもできる。 Examples of the material of the resin layer 112 include polyimide. The resin layer portion can be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.

 バリア層103は、水、酸素等の異物がTFT層104及び発光素子層105に侵入することを防ぐ層であり、例えば、CVD法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、又はこれらの積層膜で構成することができる。 The barrier layer 103 is a layer that prevents foreign substances such as water and oxygen from entering the TFT layer 104 and the light emitting element layer 105. For example, the barrier layer 103 is formed by a CVD method, such as a silicon oxide film, a silicon nitride film, or an oxynitride. A silicon film or a laminated film thereof can be used.

 TFT層104は、半導体膜115と、半導体膜115よりも上層の無機絶縁膜116(ゲート絶縁膜)と、無機絶縁膜116よりも上層の、ゲート電極GE及びゲート配線GHと、ゲート電極GE及びゲート配線GHよりも上層の無機絶縁膜118と、無機絶縁膜118よりも上層の容量電極CEと、容量電極CEよりも上層の無機絶縁膜120と、無機絶縁膜120よりも上層のソース配線SHと、ソース配線SHよりも上層の平坦化膜121(層間絶縁膜)とを含む。 The TFT layer 104 includes a semiconductor film 115, an inorganic insulating film 116 (gate insulating film) above the semiconductor film 115, a gate electrode GE and a gate wiring GH above the inorganic insulating film 116, a gate electrode GE, An inorganic insulating film 118 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 118, an inorganic insulating film 120 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 120 And a planarizing film 121 (interlayer insulating film), which is an upper layer than the source wiring SH.

 半導体膜115は、例えば低温ポリシリコン(LTPS)あるいは酸化物半導体(例えばIn-Ga-Zn-O系の半導体)で構成され、半導体膜115及びゲート電極GEを含むようにトランジスタ(TFT)が構成される。図6では、トランジスタがトップゲート構造で示されているが、ボトムゲート構造でもよい。 The semiconductor film 115 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (eg, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 115 and the gate electrode GE. Is done. In FIG. 6, the transistor is shown with a top gate structure, but may have a bottom gate structure.

 ゲート電極GE、ゲート配線GH、容量電極CE、及びソース配線SHは、例えば、アルミニウム、タングステン、モリブデン、タンタル、クロム、チタン、銅の少なくとも1つを含む金属の単層膜あるいは積層膜によって構成される。図6のTFT層104には、一層の半導体層及び三層の金属層が含まれる。 The gate electrode GE, the gate wiring GH, the capacitor electrode CE, and the source wiring SH are configured by, for example, a metal single layer film or a stacked film including at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper. The The TFT layer 104 in FIG. 6 includes one semiconductor layer and three metal layers.

 無機絶縁膜116・118・120は、例えば、CVD法によって形成された、酸化シリコン(SiOx)膜あるいは窒化シリコン(SiNx)膜又はこれらの積層膜によって構成することができる。平坦化膜121は、例えば、ポリイミド、アクリル等の塗布可能な有機材料によって構成することができる。 The inorganic insulating films 116, 118, and 120 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method. The planarization film 121 can be made of an applicable organic material such as polyimide or acrylic.

 発光素子層105は、平坦化膜121よりも上層のアノード122と、アノード122のエッジを覆う絶縁性のエッジカバー123と、エッジカバー123よりも上層のEL(エレクトロルミネッセンス)層124と、EL層124よりも上層のカソード125とを含む。エッジカバー123は、例えば、ポリイミド、アクリル等の有機材料を塗布した後にフォトリソグラフィよってパターニングすることで形成される。 The light emitting element layer 105 includes an anode 122 that is an upper layer than the planarizing film 121, an insulating edge cover 123 that covers the edge of the anode 122, an EL (electroluminescence) layer 124 that is an upper layer than the edge cover 123, and an EL layer And a cathode 125 higher than 124. The edge cover 123 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.

 サブ画素ごとに、島状のアノード122、EL層124、及びカソード125を含む発光素子ES(例えば、OLED:有機発光ダイオード,QLED:量子ドット発光ダイオード)が発光素子層105に形成され、発光素子ESを制御するサブ画素回路がTFT層104に形成される。 For each subpixel, a light-emitting element ES (for example, OLED: organic light-emitting diode, QLED: quantum dot light-emitting diode) including an island-shaped anode 122, EL layer 124, and cathode 125 is formed in the light-emitting element layer 105. A sub-pixel circuit for controlling ES is formed in the TFT layer 104.

 EL層124は、例えば、下層側から順に、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層を積層することで構成される。発光層は、蒸着法あるいはインクジェット法によって、エッジカバー123の開口(サブ画素ごと)に、島状に形成される。他の層は、島状あるいはベタ状(共通層)に形成する。また、正孔注入層、正孔輸送層、電子輸送層、電子注入層のうち1以上の層を形成しない構成も可能である。 The EL layer 124 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side. The light emitting layer is formed in an island shape in the opening (for each subpixel) of the edge cover 123 by an evaporation method or an ink jet method. The other layers are formed in an island shape or a solid shape (common layer). Moreover, the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.

 OLEDの発光層を蒸着形成する場合は、FMM(ファインメタルマスク)を用いる。FMMは多数の開口を有するシート(例えば、インバー材製)であり、1つの開口を通過した有機物質によって島状の発光層(1つのサブ画素に対応)が形成される。 FMM (fine metal mask) is used when the light emitting layer of OLED is formed by vapor deposition. The FMM is a sheet having a large number of openings (for example, made of Invar), and an island-shaped light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening.

 QLEDの発光層は、例えば、量子ドットを拡散させた溶媒をインクジェット塗布することで、島状の発光層(1つのサブ画素に対応)を形成することができる。 The light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one subpixel) by, for example, applying a solvent in which quantum dots are diffused by inkjet.

 アノード(陽極)122は、例えばITO(Indium Tin Oxide)とAg(銀)あるいはAgを含む合金との積層によって構成され、光反射性を有する。カソード(陰極)125は、MgAg合金(極薄膜)、ITO、IZO(Indium zinc Oxide)等の透光性の導電材で構成することができる。 The anode 122 is composed of, for example, a laminate of ITO (IndiumITOTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity. The cathode (cathode) 125 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).

 発光素子ESがOLEDである場合、アノード122及びカソード125間の駆動電流によって正孔と電子が発光層内で再結合し、これによって生じたエキシトンが基底状態に遷移する過程で光が放出される。カソード125が透光性であり、アノード122が光反射性であるため、EL層124から放出された光は上方に向かい、トップエミッションとなる。 When the light-emitting element ES is an OLED, holes and electrons are recombined in the light-emitting layer by a driving current between the anode 122 and the cathode 125, and light is emitted in the process in which the excitons generated thereby transition to the ground state. . Since the cathode 125 is light-transmitting and the anode 122 is light-reflective, the light emitted from the EL layer 124 is directed upward and becomes top emission.

 発光素子ESがQLEDである場合、アノード122及びカソード125間の駆動電流によって正孔と電子が発光層内で再結合し、これによって生じたエキシトンが、量子ドットの伝導帯準位(conduction band)から価電子帯準位(valence band)に遷移する過程で光(蛍光)が放出される。 When the light-emitting element ES is a QLED, holes and electrons are recombined in the light-emitting layer due to the driving current between the anode 122 and the cathode 125, and the excitons generated thereby are conduction band levels of the quantum dots. Light (fluorescence) is emitted in the process of transition from valence band level to valence band.

 発光素子層105には、前記のOLED、QLED以外の発光素子(無機発光ダイオード等)を形成してもよい。 In the light emitting element layer 105, a light emitting element (inorganic light emitting diode or the like) other than the OLED and QLED may be formed.

 封止層106は透光性であり、カソード125を覆う無機封止膜126と、無機封止膜126よりも上層の有機バッファ膜127と、有機バッファ膜127よりも上層の無機封止膜128とを含む。発光素子層105を覆う封止層106は、水、酸素等の異物の発光素子層105への浸透を防いでいる。 The sealing layer 106 is translucent, and includes an inorganic sealing film 126 that covers the cathode 125, an organic buffer film 127 that is above the inorganic sealing film 126, and an inorganic sealing film 128 that is above the organic buffer film 127. Including. The sealing layer 106 covering the light emitting element layer 105 prevents penetration of foreign matters such as water and oxygen into the light emitting element layer 105.

 無機封止膜126及び無機封止膜128はそれぞれ無機絶縁膜であり、例えば、CVD法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、又はこれらの積層膜で構成することができる。有機バッファ膜127は、平坦化効果のある透光性有機膜であり、アクリル等の塗布可能な有機材料によって構成することができる。有機バッファ膜127は例えばインクジェット塗布によって形成することができるが、液滴を止めるためのバンクを非表示領域に設けてもよい。 Each of the inorganic sealing film 126 and the inorganic sealing film 128 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked film thereof formed by a CVD method. be able to. The organic buffer film 127 is a light-transmitting organic film having a flattening effect, and can be formed of a coatable organic material such as acrylic. The organic buffer film 127 can be formed by, for example, inkjet coating, but a bank for stopping the liquid droplets may be provided in the non-display area.

 図6において示される下面フィルム110は、支持基板1を剥離した後に、樹脂層112の下面に貼り付けることで柔軟性に優れた表示デバイスを実現するための、例えばPETフィルムである。また、図6において示される機能フィルム139は、例えば、光学補償機能、タッチセンサ機能、保護機能の少なくとも1つを有する。 A bottom film 110 shown in FIG. 6 is, for example, a PET film for realizing a display device with excellent flexibility by being attached to the bottom surface of the resin layer 112 after peeling the support substrate 1. 6 has at least one of an optical compensation function, a touch sensor function, and a protection function, for example.

 〔実施形態2〕
 次に、図4及び図5に基づいて、本発明の実施形態2について説明する。
[Embodiment 2]
Next, Embodiment 2 of the present invention will be described based on FIGS.

 本実施形態(実施形態2)は、除去工程において除去する表示機能層13の部分と、マザー積層体6の分断ライン7(すなわち、分断後に得られる個片の端部)との位置関係において実施形態1と異なり、その他の点については実施形態1において説明したとおりである。 This embodiment (Embodiment 2) is carried out in the positional relationship between the portion of the display function layer 13 to be removed in the removal step and the dividing line 7 of the mother laminated body 6 (that is, the end portion of the piece obtained after dividing). Unlike the first embodiment, the other points are as described in the first embodiment.

 図4において、支持基板1、表示機能層中の積層構造2、上面フィルム3、スリット4、マザー積層体6、分断ライン7、実装部材10及び表示デバイス11については、実施形態1の図2及び3と同じ符号を付してある。各部材はそれぞれ、実施形態1と同じ構成を有するため、その説明を省略する。 4, the support substrate 1, the laminated structure 2 in the display functional layer, the top film 3, the slit 4, the mother laminated body 6, the dividing line 7, the mounting member 10, and the display device 11 are illustrated in FIG. The same reference numerals as in FIG. Since each member has the same configuration as that of the first embodiment, description thereof is omitted.

 また、図4においては、マザー積層体6を切断して個片化する分断工程(図4(b))の後に、表示機能層13に所定幅のスリット4を形成する除去工程(図4(c))を行っているが、実施形態1で説明したとおり、これらは順番を入れ替えて実施してもよい。 Further, in FIG. 4, after the dividing step (FIG. 4B) for cutting the mother laminated body 6 into individual pieces (FIG. 4B), the removing step for forming the slit 4 having a predetermined width in the display function layer 13 (FIG. 4 (FIG. 4B). Although c)) is performed, as described in the first embodiment, these may be performed by changing the order.

 本実施形態において、図4(c)及び図5(a)~(c)に示すとおり、除去工程は、マザー積層体6を分断して得られる個片の周縁部に沿って当該周縁部の内側に、スリット4が位置するように(実施形態1と異なり、スリット4の外壁が維持されて、スリット形状が残るように)、表示機能層13にスリットを形成するスリット形成工程である。 In the present embodiment, as shown in FIG. 4C and FIGS. 5A to 5C, the removing step is performed along the peripheral edge of the piece obtained by dividing the mother laminate 6. This is a slit forming step of forming a slit in the display function layer 13 so that the slit 4 is located inside (so that the outer wall of the slit 4 is maintained and the slit shape remains, unlike the first embodiment).

 この位置にスリット4を形成することにより、実施形態1とは異なり、個片の表示機能層13の側端部と個片の支持基板1の側端部とは、同位置、すなわち分断ライン7上に位置することになる。しかしながら、その内側に、支持基板1が露出しているスリット4が存在するため、後の分離工程において、個片の端部付近における分離不全の発生を防ぐことができる。 By forming the slit 4 at this position, unlike the first embodiment, the side end of the individual display function layer 13 and the side end of the individual support substrate 1 are at the same position, that is, the dividing line 7. Will be located on top. However, since the slit 4 in which the support substrate 1 is exposed is present on the inner side, it is possible to prevent the occurrence of separation failure in the vicinity of the end portions of the individual pieces in the subsequent separation step.

 また、この位置にスリット4を形成することにより、図4(c)~(f)及び図5に示すとおり、個片の周縁部に、表示機能層13からなる枠上のガイド12が形成される。このようなガイド12があることにより、後の照射工程及び分離工程において、表示デバイス11を支持基板1から剥離する際に、表示デバイス11の横滑り、位置ずれ、落下等を防ぐことができる。表示デバイス11の剥離は照射工程後に吸着することで行なってもよい。本実施の形態のように個片化された後は、吸着による剥離がより行いやすい。 Further, by forming the slit 4 at this position, as shown in FIGS. 4 (c) to (f) and FIG. 5, the guide 12 on the frame made of the display function layer 13 is formed at the peripheral portion of the piece. The Due to the presence of such a guide 12, when the display device 11 is peeled from the support substrate 1 in the subsequent irradiation process and separation process, it is possible to prevent the display device 11 from slipping, shifting, dropping, and the like. The display device 11 may be peeled off by adsorption after the irradiation process. After being singulated as in this embodiment, peeling by adsorption is easier to perform.

 あるいは、分離工程の前に、当該ガイド12部分、すなわち、個片の端部とスリット4との間の表示機能層13を除去して、実施形態1と同様に、個片の端部の全周にわたって表示機能層13を除去した状態としてもよい。 Alternatively, before the separation step, the display function layer 13 between the guide 12 portion, that is, the end of the piece and the slit 4 is removed, and the entire end of the piece is the same as in the first embodiment. The display functional layer 13 may be removed over the circumference.

 個片の支持基板1及び表示機能層13の側端部と、スリット4の内側縁部との離間距離(すなわち、分断ライン7とスリット4の内側縁部との離間距離)は、レーザでより確実に照射する観点から幅は小さい方がよい。例えば、1mm以下であることが好ましく、また、レーザの種類によって適宜設定してもよく、例えば、COレーザで100μm程度、UVピコ秒レーザでは50μm程度である。 The separation distance between the side edges of the support substrate 1 and the display function layer 13 and the inner edge of the slit 4 (that is, the separation distance between the dividing line 7 and the inner edge of the slit 4) is determined by the laser. From the viewpoint of reliable irradiation, the width should be small. For example, it is preferably 1 mm or less, and may be set as appropriate depending on the type of laser. For example, it is about 100 μm for a CO 2 laser and about 50 μm for a UV picosecond laser.

 〔まとめ〕
 〔態様1〕
 支持基板上に表示機能層を積層する積層工程と、前記表示機能層を前記支持基板と共に切断して複数の個片に分断する分断工程と、前記支持基板側から光を照射する照射工程と、前記支持基板と前記表示機能層とを分離する分離工程とを含む表示デバイスの製造方法であって、
 前記個片の前記周縁部に支持基板が露出するように、又は、前記周縁部に沿って当該優先部より内側に前記支持基板が露出するように、前記積層工程の後であって且つ前記照射工程の前に、前記表示機能層を部分的に除去する除去工程を更に含む、表示デバイスの製造方法。
[Summary]
[Aspect 1]
A laminating step of laminating a display functional layer on a support substrate, a dividing step of cutting the display functional layer together with the support substrate and dividing it into a plurality of pieces, an irradiation step of irradiating light from the support substrate side, A method for manufacturing a display device, comprising a separation step of separating the support substrate and the display functional layer,
After the laminating step, the irradiation is performed so that the support substrate is exposed at the peripheral portion of the piece or the support substrate is exposed inside the priority portion along the peripheral portion. A method for manufacturing a display device, further comprising a removing step of partially removing the display functional layer before the step.

 〔態様2〕
 前記除去工程を、前記分断工程の前に行う、例えば態様1に記載の表示デバイスの製造方法。
[Aspect 2]
The display device manufacturing method according to, for example, aspect 1, wherein the removing step is performed before the dividing step.

 〔態様3〕
 前記個片の表示機能層の側端部が、前記個片の支持基板の側端部より内側に位置するように、前記除去工程において前記表示機能層を部分的に除去する、例えば態様1又は2に記載の表示デバイスの製造方法。
[Aspect 3]
The display function layer is partially removed in the removing step so that the side end portion of the display function layer of the piece is positioned inside the side end portion of the support substrate of the piece, for example, the aspect 1 or 3. A method for producing a display device according to 2.

 〔態様4〕
 前記個片の表示機能層の側端部と、前記個片の支持基板の側端部との離間距離が1mm以下である、例えば態様3に記載の表示デバイスの製造方法。
[Aspect 4]
The manufacturing method of the display device of the aspect 3, for example, wherein the separation distance between the side end portion of the display functional layer of the piece and the side end portion of the support substrate of the piece is 1 mm or less.

 〔態様5〕
 前記除去工程は、前記表示機能層に所定幅のスリットを形成するスリット形成工程であり、
 前記個片の表示機能層の側端部と、前記個片の支持基板の側端部とが同位置にあり、これらの側端部の内側にスリットが位置するように、前記スリットを形成する、例えば態様1又は2に記載の表示デバイスの製造方法。
[Aspect 5]
The removing step is a slit forming step of forming a slit having a predetermined width in the display function layer,
The slits are formed so that the side end portions of the display functional layer of the individual pieces and the side end portions of the support substrate of the individual pieces are at the same position, and the slits are positioned inside these side end portions. For example, the manufacturing method of the display device of aspect 1 or 2.

 〔態様6〕
 前記個片の表示機能層の側端部と、前記スリットの内側縁部との離間距離が1mm以下である、例えば態様5に記載の表示デバイスの製造方法。
[Aspect 6]
The method for manufacturing a display device according to aspect 5, for example, wherein a separation distance between a side end portion of the individual display function layer and an inner edge portion of the slit is 1 mm or less.

 〔態様7〕
 前記スリット形成工程の後であって且つ前記分離工程の前に、前記個片の表示機能層の側端部と前記スリットとの間の表示機能層を除去する工程を更に含む、例えば態様5又は6に記載の表示デバイスの製造方法。
[Aspect 7]
After the slit forming step and before the separating step, the method further includes a step of removing the display functional layer between the side end portion of the individual display functional layer and the slit, for example, the aspect 5 or 7. A method for producing a display device according to 6.

 〔態様8〕
 前記積層工程は、前記支持基板に隣接する樹脂層、バリア層、薄膜トランジスタ層、発光素子層、封止層及び上面フィルムを、この順に積層し、かつ、前記樹脂層の側端部が、前記薄膜トランジスタ層、前記発光素子層、前記封止層及び前記上面フィルムの側端部より外側に位置するように積層する、例えば態様1~7のいずれかに記載の表示デバイスの製造方法。
[Aspect 8]
The laminating step includes laminating a resin layer, a barrier layer, a thin film transistor layer, a light emitting element layer, a sealing layer, and a top film adjacent to the support substrate in this order, and a side end portion of the resin layer is formed of the thin film transistor. The method for producing a display device according to any one of aspects 1 to 7, for example, wherein the layers are laminated so as to be located outside the side end portions of the layer, the light emitting element layer, the sealing layer, and the top film.

 〔態様9〕
 前記樹脂層は、ポリイミドからなる層である、例えば態様8に記載の表示デバイスの製造方法。
[Aspect 9]
The said resin layer is a manufacturing method of the display device of the aspect 8, for example which is a layer which consists of polyimides.

 〔態様10〕
 前記積層工程の後であって且つ前記照射工程の前に、前記上面フィルムに切れ込みを入れるカット工程、実装領域を覆う前記上面フィルムを剥離する剥離工程、及び、露出した前記実装領域上に実装部材を実装する実装工程を更に含み、
 前記実装工程は、前記除去工程の後に行われる、例えば態様8又は9に記載の表示デバイスの製造方法。
[Aspect 10]
After the lamination step and before the irradiation step, a cutting step for cutting the upper surface film, a peeling step for peeling the upper surface film covering the mounting region, and a mounting member on the exposed mounting region Further includes a mounting step of mounting
The display device manufacturing method according to, for example, the aspect 8 or 9, wherein the mounting step is performed after the removing step.

 〔態様11〕
 前記除去工程において、COレーザ又はUVレーザを用いて前記表示機能層を部分的に除去する、例えば態様1~10のいずれかに記載の表示デバイスの製造方法。
[Aspect 11]
The method for manufacturing a display device according to any one of aspects 1 to 10, for example, wherein the display functional layer is partially removed using a CO 2 laser or a UV laser in the removing step.

 1  支持基板
 2  積層構造
 3  上面フィルム
 4  スリット
 5  切れ込み
 6  マザー積層体
 7  分断ライン
 8  実装領域
 10 実装部材
 11 表示デバイス
 12 ガイド
 13 表示機能層
DESCRIPTION OF SYMBOLS 1 Support substrate 2 Laminated structure 3 Top film 4 Slit 5 Notch 6 Mother laminated body 7 Dividing line 8 Mounting area 10 Mounting member 11 Display device 12 Guide 13 Display functional layer

Claims (11)

 支持基板上に表示機能層を積層する積層工程と、前記表示機能層を前記支持基板と共に切断して複数の個片に分断する分断工程と、前記支持基板側から光を照射する照射工程と、前記支持基板と前記表示機能層とを分離する分離工程とを含む表示デバイスの製造方法であって、
 前記個片の周縁部に支持基板が露出するように、又は、前記個片の周縁部に沿って当該周縁部より内側に前記支持基板が露出するように、前記積層工程の後であって且つ前記照射工程の前に、前記表示機能層を部分的に除去する除去工程を更に含む、表示デバイスの製造方法。
A laminating step of laminating a display functional layer on a support substrate, a dividing step of cutting the display functional layer together with the support substrate and dividing it into a plurality of pieces, an irradiation step of irradiating light from the support substrate side, A method for manufacturing a display device, comprising a separation step of separating the support substrate and the display functional layer,
After the laminating step, so that the support substrate is exposed at the peripheral edge of the individual pieces, or so that the support substrate is exposed inside the peripheral edge along the peripheral edge of the individual pieces, and A method for manufacturing a display device, further comprising a removing step of partially removing the display functional layer before the irradiation step.
 前記除去工程を、前記分断工程の前に行う、請求項1に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to claim 1, wherein the removing step is performed before the dividing step.  前記個片の表示機能層の側端部が、前記個片の支持基板の側端部より内側に位置するように、前記除去工程において前記表示機能層を部分的に除去する、請求項1又は2に記載の表示デバイスの製造方法。 The display function layer is partially removed in the removing step so that a side end portion of the display function layer of the individual piece is positioned inside a side end portion of a support substrate of the individual piece. 3. A method for producing a display device according to 2.  前記個片の表示機能層の側端部と、前記個片の支持基板の側端部との離間距離が1mm以下である、請求項3に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to claim 3, wherein a distance between a side end portion of the display functional layer of the piece and a side end portion of the support substrate of the piece is 1 mm or less.  前記除去工程は、前記表示機能層に所定幅のスリットを形成するスリット形成工程であり、
 前記個片の表示機能層の側端部と、前記個片の支持基板の側端部とが同位置にあり、これらの側端部の内側にスリットが位置するように、前記スリットを形成する、請求項1又は2に記載の表示デバイスの製造方法。
The removing step is a slit forming step of forming a slit having a predetermined width in the display function layer,
The slits are formed so that the side end portions of the display functional layer of the individual pieces and the side end portions of the support substrate of the individual pieces are at the same position, and the slits are positioned inside these side end portions. The manufacturing method of the display device of Claim 1 or 2.
 前記個片の表示機能層の側端部と、前記スリットの内側縁部との離間距離が1mm以下である、請求項5に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to claim 5, wherein a distance between a side end portion of the display function layer of the individual piece and an inner edge portion of the slit is 1 mm or less.  前記スリット形成工程の後であって且つ前記分離工程の前に、前記個片の表示機能層の側端部と前記スリットとの間の表示機能層を除去する工程を更に含む、請求項5又は6に記載の表示デバイスの製造方法。 6. The method further comprising the step of removing the display function layer between the slit and the side end of the display function layer of the individual piece and after the slit formation step and before the separation step. 7. A method for producing a display device according to 6.  前記積層工程は、前記支持基板に隣接する樹脂層、バリア層、薄膜トランジスタ層、発光素子層、封止層及び上面フィルムを、この順に積層し、かつ、前記樹脂層の側端部が、前記薄膜トランジスタ層、前記発光素子層、前記封止層及び前記上面フィルムの側端部より外側に位置するように積層する、請求項1~7のいずれか1項に記載の表示デバイスの製造方法。 The laminating step includes laminating a resin layer, a barrier layer, a thin film transistor layer, a light emitting element layer, a sealing layer, and a top film adjacent to the support substrate in this order, and a side end portion of the resin layer is formed of the thin film transistor. The method for manufacturing a display device according to any one of claims 1 to 7, wherein the layer is laminated so as to be located outside a side end portion of the layer, the light emitting element layer, the sealing layer, and the top film.  前記樹脂層は、ポリイミドからなる層である、請求項8に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to claim 8, wherein the resin layer is a layer made of polyimide.  前記積層工程の後であって且つ前記照射工程の前に、前記上面フィルムに切れ込みを入れるカット工程、実装領域を覆う前記上面フィルムを剥離する剥離工程、及び、露出した前記実装領域上に実装部材を実装する実装工程を更に含み、
 前記実装工程は、前記除去工程の後に行われる、請求項8又は9に記載の表示デバイスの製造方法。
After the lamination step and before the irradiation step, a cutting step for cutting the upper surface film, a peeling step for peeling the upper surface film covering the mounting region, and a mounting member on the exposed mounting region Further includes a mounting step of mounting
The method for manufacturing a display device according to claim 8, wherein the mounting step is performed after the removing step.
 前記除去工程において、COレーザ又はUVレーザを用いて前記表示機能層を部分的に除去する、請求項1~10のいずれか1項に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to any one of claims 1 to 10, wherein in the removing step, the display function layer is partially removed using a CO 2 laser or a UV laser.
PCT/JP2018/013247 2018-03-29 2018-03-29 Display device production method Ceased WO2019186893A1 (en)

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