WO2019186774A1 - Method for manufacturing vapor deposition mask, and vapor deposition mask - Google Patents

Abstract

This method for manufacturing a vapor deposition mask (10) includes a howling sheet fabrication step, the howling sheet fabrication step including a step for stacking a non-magnetic layer (113b) on a magnetic layer (113a).

Description

Vapor deposition mask manufacturing method and vapor deposition mask

The present invention relates to a method for manufacturing a vapor deposition mask for depositing a vapor deposition layer on a vapor deposition substrate, and a vapor deposition mask.

To produce a vapor deposition mask for patterning the vapor deposition layer, the cover sheet and the howling sheet are attached to the mask frame so as to cross each other. And the strip-shaped mask sheet | seat which has the effective part by which the vapor deposition hole was formed in the same pattern as the vapor deposition layer to vapor-deposit is attached to a mask sheet | seat so that the cover sheet | seat and howling sheet | seat arrange | positioned at a grid | lattice form may be covered. Thereby, a vapor deposition mask is completed.

Japanese Patent Publication “Japanese Patent Laid-Open No. 2017-115248”

When vapor deposition is started using the above vapor deposition mask, the cover sheet and the howling sheet are lifted by the magnetic force, and the cover sheet and the howling sheet lift the mask sheet so that the mask sheet adheres to the vapor deposition substrate. As a result, the vapor deposition layer can be accurately formed on the vapor deposition substrate so as to have a desired film thickness and shape through the vapor deposition holes of the mask sheet.

However, if unevenness is formed on the cover sheet or howling sheet that supports the mask sheet, magnetic force is applied to the cover sheet or howling sheet non-uniformly due to the uneven portions. As a result, the cover sheet or howling sheet cannot lift the mask sheet uniformly. As a result, a gap is partially generated between the mask sheet and the deposition substrate, and the deposition layer cannot be accurately deposited on the deposition substrate.

An object of one embodiment of the present invention is to suppress generation of a gap between a mask sheet and a deposition target substrate.

In order to solve the above problems, a method for manufacturing a vapor deposition mask according to one embodiment of the present invention is used to pattern a vapor deposition layer on a vapor deposition substrate including a deformed portion having a non-evaporation region whose outer shape is different from a quadrangle. A method for producing a vapor deposition mask to be formed, wherein a lower layer sheet is formed that has a stretched portion extending from one end portion to the other end portion and a convex portion projecting from the stretched portion in a shape corresponding to the deformed portion. A plurality of vapor deposition holes are formed in the forming step, the lower layer sheet attaching step for attaching the plurality of lower layer sheets formed in the lower layer sheet forming step to the mask frame, and the mask frame to which the plurality of lower layer sheets are attached. A mask sheet attaching step for attaching the mask sheet provided with the formed effective portion, and the lower layer sheet forming step includes magnetic and non-magnetic materials. A second layer forming step of forming a second layer having a characteristic different from that of the first layer, either magnetic or non-magnetic, directly or via another layer on the first layer having one of the characteristics It is characterized by including.

In order to solve the above-described problem, a vapor deposition mask according to one embodiment of the present invention includes a vapor deposition mask used for patterning a vapor deposition layer on a vapor deposition substrate including a deformed portion whose outer shape of a vapor deposition region is different from a quadrangle. And having a mask frame, an extending portion extending from one end portion to the other end portion, and a convex portion protruding from the extending portion in a shape corresponding to the deformed portion, and attached to the mask frame A plurality of lower layer sheets, and an effective portion in which a plurality of vapor deposition holes are formed are provided, and have a mask sheet attached to the mask frame.
A first layer having one of the characteristics of magnetic and non-magnetic, and a characteristic different from that of the first layer of magnetic and non-magnetic, formed directly or via another layer on the first layer. And a second layer having:

According to one embodiment of the present invention, it is possible to suppress the generation of a gap between the mask sheet and the deposition target substrate.

It is a figure showing the structure of the electronic device with which the display device which concerns on Embodiment 1 was used. FIG. 6 is a diagram illustrating a manufacturing process of the display device according to the first embodiment. 3 is a plan view of a substrate in which display panel formation regions according to Embodiment 1 are arranged. FIG. It is the sectional view on the AA line in the board | substrate of FIG. FIG. 4 is a schematic diagram illustrating a state of a vapor deposition process for forming a vapor deposition layer on the TFT substrate according to the first embodiment. It is a figure showing the flow of the preparation process of the vapor deposition mask which concerns on Embodiment 1. FIG. It is a figure showing a mode that the vapor deposition mask which concerns on Embodiment 1 is produced. 2 is a plan view illustrating a configuration of a howling sheet according to Embodiment 1. FIG. It is a figure showing the structure of the mask sheet | seat of Embodiment 1. FIG. It is a top view of the effective part vicinity of the vapor deposition mask of Embodiment 1. It is a figure showing the flow of the howling sheet preparation process which concerns on Embodiment 1. FIG. It is a figure showing a mode that the howling sheet which concerns on Embodiment 1 is produced. It is a top view showing the structure of the howling sheet which concerns on the comparative example of Embodiment 1. FIG. It is a figure showing a mode that the vapor deposition layer is vapor-deposited on a TFT substrate using the vapor deposition mask which concerns on the comparative example of Embodiment 1. FIG. It is a figure showing a mode that the vapor deposition layer is vapor-deposited on a TFT substrate using the vapor deposition mask of Embodiment 1. FIG. It is a figure showing the flow of the howling sheet preparation process which concerns on Embodiment 2. FIG. It is a figure showing a mode that the howling sheet which concerns on Embodiment 2 is produced. It is a figure showing the flow of the howling sheet preparation process which concerns on Embodiment 3. FIG. It is a figure showing a mode that the howling sheet which concerns on Embodiment 3 is produced. It is a figure showing the flow of the howling sheet preparation process which concerns on Embodiment 4. FIG. It is a figure showing a mode that the howling sheet which concerns on Embodiment 4 is produced. It is sectional drawing showing the structure of the howling sheet which concerns on Embodiment 4. It is a figure showing the flow of the howling sheet preparation process concerning Embodiment 5. It is a figure showing a mode that the howling sheet which concerns on Embodiment 5 is produced.

Embodiment 1
Hereinafter, an embodiment of the present invention will be described in detail.

(Configuration of electronic device 50)
FIG. 1 is a diagram illustrating a configuration of an electronic device 50 in which the display device 56 according to the first embodiment is used. FIG. 1A is a perspective view illustrating an appearance of the electronic device 50, and FIG. It is sectional drawing. An example of the electronic device 50 is a smartphone. However, the electronic device 50 is not limited to a smartphone, and may be any electronic device in which the display device 56 is incorporated, such as another portable information terminal such as a mobile phone terminal or a tablet, a television receiver, or a personal computer.

The electronic device 50 has a housing 51. Furthermore, the electronic device 50 includes a touch panel 54, a speaker 52, a camera 53, and a microphone (not shown) provided in the housing 51. In addition, the electronic device 50 may have various buttons such as a power button for switching power on and off.

The touch panel 54 is fitted in the casing 51. The touch panel 54 includes a touch sensor 55 and a display device 56. The display device 56 has a deformed active area 57 for displaying various images. The display device 56 includes an active region 57 and a frame region (inactive region) surrounding the active region 57.

The touch sensor 55 is provided in the display device 56. The touch sensor 55 is an input device that receives an input of a coordinate position on the display device 56 from a user by detecting an input operation by contact or proximity of a finger and a pen. The touch sensor 55 may be formed integrally with the display device 56 or may be formed as a configuration different from the display device 56. The touch sensor 55 may be any method that can accept an input operation from the user, such as a capacitance method or an infrared method.

The active area 57 of the display device 56 has an outer shape that is not a rectangle or a square but a shape other than a rectangle or a square.

The irregular shape means that at least a part of the edge (side or corner) when the outer shape of the active region 57 is rectangular or square is inside (rectangular or square center) or outside (rectangular or square center) from the edge. It is a shape having a deformed portion protruding in a direction away from the portion. That is, when the outer shape of the active region 57 is a rectangle or a square, the deformed portion is a shape portion different from the rectangle or the square.

For example, the four corners 57a to 57d of the active region 57 in FIG. 1 have a so-called round shape (arc shape) that is not a right angle but curved. Further, the active region 57 has, for example, a shape having a notch portion 57e (notch portion) that is recessed so as to protrude from the edge toward the central portion of the active region 57 on at least one of the four sides. The notch 57e has, for example, an arc shape. The frame region in the display device 56 is narrow and has an outer shape that is substantially the same as the outer shape of the active region 57. That is, the external shape of the display device 56 is not a right angle at the four corners but a shape (arc shape) having a so-called round. Furthermore, the display device 56 has a shape having a notch portion 56e (notch portion) that is recessed so as to protrude from the edge toward the central portion of the display device 56 on at least one side of the four sides.

Further, as shown in FIG. 1B, in the present embodiment, the active region 57 of the display device 56 has a curved cross section near both long sides.

A camera 53 and a speaker 52 are arranged in a region surrounded by the notch 56e in the housing 51.

Note that the external shapes of the display device 56 and the active region 57 are merely examples, and other irregular shapes may be used.

(Outline of manufacturing method of display device 56)
FIG. 2 is a diagram illustrating a manufacturing process of the display device 56 according to the first embodiment. FIG. 3 is a plan view of the substrate 1 in which the display panel formation regions 9 according to the first embodiment are arranged. 4 is a cross-sectional view taken along line AA of the display panel formation region 9 in the substrate 1 of FIG. FIG. 3 shows a configuration in the case of taking 18 display panels from one mother glass. The number of chamfered display panels from one mother glass is not limited to 18 and may be 17 or less, or 19 or more.

18 pieces of display panel forming regions 9 are arranged on the substrate 1. The display panel formation region 9 is a region that becomes the display device 56 after being cut into pieces by being cut out from the mother glass.

The substrate 1 includes a TFT substrate (deposition substrate) 30, an EL layer 40, and a sealing layer 5.

A plurality of active regions 57 are provided in a matrix on the TFT substrate 30. The active region 57 is a region where, for example, RGB pixels pix are formed. Of the display panel formation region 9, a peripheral region surrounding the active region 57 is a frame region 58. In FIG. 3, the frame region 58 is a frame-shaped region that surrounds the outside of the active region 57 indicated by a broken line in the display panel formation region 9.

As shown in FIGS. 2 to 4, first, a TFT substrate 30 is manufactured in the TFT step S11. The TFT substrate 30 has a resin layer (not shown) and a barrier layer (not shown) formed on a translucent support substrate 31 such as mother glass, and is disposed on each pixel pix by a known method. A TFT (transistor, driving element) 32 included in the pixel circuit, various wirings 33 including a gate wiring and a source wiring are formed, an inorganic insulating film 34, a planarizing film 35, and the like are formed, and the planarizing film 35 is further formed. It is manufactured by forming an anode (first electrode) 36 in contact with the TFT 32 and an edge cover 37 for defining a pixel region.

Examples of the material for the resin layer (not shown) include polyimide, epoxy, polyamide, and the like.

The barrier layer (not shown) is a layer that prevents moisture and impurities from reaching the TFT 32 and the EL layer 40 when the display device is used. For example, a silicon oxide film or silicon nitride formed by a CVD method is used. A film, a silicon oxynitride film, or a stacked film thereof can be used.

The TFT 32 is a driving transistor for supplying a driving current to the EL layer 40. Although not shown, the TFT 32 has a semiconductor layer, a gate electrode, a drain electrode, and a source electrode. The semiconductor layer can be formed of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor).

The inorganic insulating film 34 is formed so as to cover the TFT 32. Thereby, the inorganic insulating film 34 prevents the metal film from being peeled off in the TFT 32 and protects the TFT 32. The inorganic insulating film 34 can be formed of a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.

The planarizing film 35 is formed on the inorganic insulating film 34. The planarizing film 35 planarizes the unevenness on the inorganic insulating film 34. The planarizing film 35 is an organic insulating film made of a photosensitive resin such as acrylic or a thermoplastic resin such as polyimide.

The anode 36 is individually patterned in an island shape for each pixel pix, and the end of the anode 36 is covered with an edge cover 37. Each anode 36 is connected to the TFT 32 through a contact hole provided in the inorganic insulating film 34 and the planarizing film 35.

The anode 36 functions as an electrode for injecting holes into the EL layer 40. The anode 36 is composed of, for example, a laminate of ITO (Indium Tin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity.

The edge cover 37 is disposed so as to delimit adjacent pixels pix. The edge cover 37 is an insulating layer and is made of, for example, a photosensitive resin. The edge cover 37 is formed so as to cover the end of the anode 36. The edge cover 37 covers the end portion of the anode 35 to prevent the end of the anode 35 and the cathode 46 from being short-circuited even when the end of the EL layer 40 becomes thin. The edge cover 37 also functions as a pixel separation film so that current does not leak to the adjacent pixels pix.

Further, when the active region 57 is formed, a frame bank 38 surrounding the active region 57 in a frame shape is also formed on the TFT substrate 30. The frame bank 38 is made of a photosensitive resin such as acrylic or a thermoplastic resin such as polyimide.

Next, in the EL step S12, the EL layer 40 and the cathode 46 are formed on the TFT substrate 30.

A hole injection layer 41, a hole transport layer 42, a light emitting layer 43, an electron transport layer 44, and an electron injection layer 45 are formed on the TFT substrate 30 created in the TFT step S11 from the anode 36 side by vapor deposition or the like. Are stacked in this order. Thereby, the EL layer 40 is formed on the TFT substrate 30. Next, a cathode 46 is formed so as to cover the EL layer 40 formed on the TFT substrate 30.

The hole transport layer 42 and the light emitting layer 43 are formed in an island shape for each pixel pix by an evaporation method using an evaporation mask. The hole injection layer 41, the electron transport layer 44, the electron injection layer 45, and the cathode 46 may be a solid common layer formed across a plurality of pixels pix. A configuration in which one or more of the hole injection layer 41 and the electron transport layer 44 and the electron injection layer 45 are not formed is also possible.

In the present embodiment, layers such as the hole transport layer 42 and the light emitting layer 43 that are vapor-deposited for each pixel pix using a vapor deposition mask are referred to as vapor deposition layers. This vapor deposition mask is produced in advance before the EL step S12 in the vapor deposition mask production step S20 (details will be described later).

Further, at least one of the hole transport layer 42 and the light emitting layer 43 may be formed for each pixel by an inkjet method without using a vapor deposition mask.

In addition, the active area | region 57 which is an area | region in which a vapor deposition layer is formed may be called a vapor deposition area | region.

The cathode 46 can be made of a light-transmitting conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zincum Oxide), or MgAg alloy (ultra-thin film).

The light emitting layer 43 and the hole transport layer 42 are formed in the pixel pix for each emission color of the pixel pix. For example, when the pixel pix is one of a red pixel that emits red light, a green pixel that emits green light, and a blue pixel that emits blue light, the red pixel includes a light emitting layer that emits red light, and A hole transport layer for red pixels is formed, a light emitting layer for emitting green light and a hole transport layer for green pixels are formed for green pixels, and a light emitting layer and blue pixels for emitting blue light are formed for blue pixels. Hole transport layer is formed.

The hole injection layer 41 is a layer that includes a hole injecting material and promotes injection of holes into the light emitting layer 43.

The hole transport layer 42 includes a hole transport material, and is a layer that transports holes injected from the anode 36 and injected through the hole injection layer 41 to the light emitting layer 43.

The electron injection layer 45 is a layer that contains an electron injecting material and promotes injection of electrons into the light emitting layer 43. The electron transport layer 44 includes an electron transport material, and transports electrons injected from the cathode 46 and injected through the electron injection layer 45 to the light emitting layer 43.

The holes injected from the anode 36 to the light emitting layer 43 and the electrons injected from the cathode 46 to the light emitting layer 43 recombine in the light emitting layer 43 to form excitons. The formed excitons emit light when deactivated from the excited state to the ground state. Thereby, the light emitting layer 43 emits red light, green light, or blue light, for example.

In addition, although the case where the anode 36, the EL layer 40, and the cathode 46 (referred to as a light emitting element layer) constitute an OLED has been described, the light emitting element layer may constitute a QLED. When the light emitting element layer constitutes a QLED, holes and electrons are recombined in the light emitting layer 43 by the driving current between the anode 36 and the cathode 46. Then, the exciton generated thereby emits light (fluorescence) in the process of transition from the conduction band level of the quantum dot to the valence band level.

Further, the light emitting element layer may form a light emitting element (inorganic light emitting diode or the like) other than the above OLED and QLED.

Then, in the sealing step S13, the sealing layer 5 is formed on the cathode 46. As an example, the sealing layer 5 may have a three-layer structure in which an inorganic film, an organic film, and an inorganic film are stacked in this order from the TFT substrate 30 side. The sealing layer 5 is translucent and prevents penetration of foreign matters such as water and oxygen into the light emitting element layer.

And when making the display device 56 flexible as shown in FIG. 1, after forming this sealing layer 5, the flexible process S14 is provided. In flexible process S14, the support substrate 31 is peeled off, and a film such as PET to be a support is pasted.

Then, each display panel forming region 9 is cut out from the TFT substrate 30 in the individualization step S15. Thereby, each display panel is separated into pieces, and a flexible display panel is formed.

Next, in a mounting step S16, a member such as a driver is mounted on each individual display panel. Thereby, the display device 56 is completed.

FIG. 5 is a schematic view showing a state of a vapor deposition process for forming a vapor deposition layer on the TFT substrate 30 according to the first embodiment.

In the vapor deposition process, the TFT substrate 30 and the vapor deposition mask 10 are arranged to face each other. Then, the plate-like magnet 72 is brought close to the upper surface of the TFT substrate 30 (the surface opposite to the surface facing the vapor deposition mask 10). Thereby, a magnetic force is applied to the vapor deposition mask 10 from the magnet 72 through the TFT substrate 30, and the mask sheet having a plurality of through holes in the vapor deposition mask 10 adheres to the TFT substrate 30.

Then, under vacuum, vapor deposition particles Z (for example, organic light emitting material) evaporated by the vapor deposition source 70 are vapor-deposited on the pixels on the TFT substrate 30 through the mask sheet.

Thereby, the vapor deposition layer (the hole transport layer 42 or the light emitting layer 43) is patterned on the TFT substrate 30 in a pattern corresponding to the through hole of the mask sheet. The vapor deposition step shown in FIG. 3 is performed for each type of vapor deposition layer deposited on the pixel pix.

(Deposition mask)
Next, the structure of the vapor deposition mask used in the vapor deposition step and the vapor deposition mask manufacturing step S20 will be described.

FIG. 6 is a diagram illustrating a flow of a deposition mask manufacturing step S20 according to the first embodiment. FIG. 7 is a diagram illustrating a state in which the vapor deposition mask according to Embodiment 1 is manufactured.

First, as shown in Step Sa of FIG. 6 and FIGS. 7A and 7B, a frame-shaped mask frame 11 having a frame opening 11a in a region surrounded by a frame has a plurality of cover sheets (lower layer sheets). ) 12 is attached (cover sheet attaching step).

The mask frame 11 is made of, for example, an invar material having a thickness of 20 mm to 30 mm with very little thermal expansion as a base material. It is thicker than the mask sheet and has high rigidity so that sufficient accuracy can be secured even when the mask sheet is stretched and welded.

The cover sheet 12 fills a gap between mask sheets that are attached to the mask frame 11 later, or closes a dummy pattern formed on the mask sheet.

Of the two surfaces of the mask sheet to be attached to the mask frame 11 later, when the surface far from the TFT substrate 30 is the lower surface in the vapor deposition step, the cover sheet 12 is arranged on the lower surface side of the mask sheet, Sometimes called.

The cover sheet 12 is a magnetic body containing, for example, a magnetic material such as Ni, Fe, stainless steel (SUS), or an invar material as a base material. The cover sheet 12 can have a thickness of about 30 μm to 50 μm, for example. The cover sheet 12 has an elongated shape and extends linearly from one end to the other end.

When the cover sheet 12 is attached to the mask frame 11, as shown by the arrow F1 in FIG. 7B, the cover sheet 12 is stretched by applying a force in the outward direction (the direction away from each other) to both ends of the cover sheet 12. While (pulling), both end portions of the cover sheet 12 are welded to predetermined positions in the grooves provided in the mask frame 11. And the unnecessary part outside a welded part in the cover sheet 12 is cut. Thereby, each cover sheet 12 is attached to a predetermined position of the mask frame 11. In the present embodiment, each cover sheet 12 is attached to the mask frame 11 so as to be parallel to the short side direction of the mask frame 11. Each cover sheet 12 is attached to the mask frame 11 so as to be parallel to each other along the long side of the mask frame 11.

Next, as shown in step Sb of FIG. 6 and FIG. 7C, a howling sheet (lower layer sheet) 13 is attached to the mask frame 11 to which the cover sheet 12 is attached (howling sheet attaching step).

The howling sheet 13 usually plays a role of crossing and supporting a mask sheet that is later attached to the mask frame 11 so as not to loosen, or blocking a dummy pattern of vapor deposition holes formed in the mask sheet. The howling sheet 13 in the present embodiment defines an outer shape including a deformed portion in the active region 57.

Note that the howling sheet 13 may be referred to as a lower layer sheet because it is disposed on the lower surface side of the mask sheet to be attached to the mask frame 11 later.

The howling sheet 13 is configured by combining, for example, a magnetic material including a magnetic material such as Ni, Fe, stainless steel (SUS), or an invar material as a base material with a nonmagnetic material including a nonmagnetic material. ing.

The howling sheet 13 can have a thickness of 30 μm to 100 μm, for example. The width of the howling sheet 13 is, for example, about 8 mm to 10 mm, and is determined by the layout on the substrate on which the display panel is arranged.

The howling sheet 13 is formed in advance in the howling sheet manufacturing step in step S101 before step Sb. Details of this howling sheet manufacturing process will be described later.

FIG. 8 is a plan view showing the configuration of the howling sheet 13 according to the first embodiment.

The howling sheet 13 has a notch portion 13c formed on one side of the long sides and a notch portion 13d formed on the other side.

The notches 13c and 13d have shapes corresponding to, for example, arcuate shapes such as the notch 57e and the four corners 57a to 57d in the active region 57 (FIGS. 1 and 3). Have

The notch 13c includes a curved portion 27c having a rounded shape such as an arc having the same shape as the corner 57c, and an active region 57 (FIGS. 1 and 3) to form a corner 57c of the active region 57 (FIGS. 1 and 3). In order to form the corner 57d of 3), a curved portion 27d having a round shape such as an arc shape having the same shape as the corner 57d is provided. The curved portions 27c and 27d are corner portions of concave portions formed in the notch portion 13c.

The notch 13d includes a curved portion 27a, a convex portion 27e, and a curved portion 27b. The curved portion 27a has the same circular shape as the corner 57a in order to form the corner 57a of the active region 57 (FIGS. 1 and 3). The convex part 27e has the same shape as the notch part 57e in order to form the notch part 57e of the active region 57 (FIGS. 1 and 3). The curved portion 27b has the same arcuate shape as the corner 57b in order to form the corner 57b of the active region 57 (FIGS. 1 and 3). The convex part 27e is formed between the curved part 27a and the curved part 27b. The curved portions 27a and 27b are concave portions formed in the cutout portion 13d. The convex part 27e is a convex part formed in the notch part 13d.

In other words, the howling sheet 13 includes an extending portion 13b extending from one end portion to the other end portion, and an active region 57 (FIG. 1, FIG. 1) from one side (first side) of the extending portion 13b toward the outside. 3) corresponding to the deformed portion of the active region 57 (FIGS. 1 and 3) from the other side (second side) of the extending portion 13b toward the outside. It is a shape which has the convex part 27zb and the convex part 27e which protrude in a shape.

The stretched portion 13b is wide in the vicinity of both end portions that overlap with the mask frame 11, and the width in the vicinity of both end portions is narrower than that in the vicinity of both end portions. The convex portion 27za protruding from the first side of the extending portion 13b has a curved outer shape by the curved portions 27c and 27d. The outer shape of the convex portion 27zb protruding from the second side of the extending portion 13b is curved by the curved portions 27a and 27b.

In the present embodiment, the convex portions 27za and 27zb are formed at symmetrical positions via the extending portion 13b. The shapes of the convex portions 27za and the convex portions 27zb can also be made symmetrical with respect to the extending portions 13b.

The convex portions 27e are formed between the convex portions 27zb formed side by side on the second side of the extending portion 13b. In the extending part 13b, no convex part is arranged on the first side where the convex part 27e is formed on the second side. For this reason, in the howling sheet 13, the part in which the convex part 27e is formed becomes a shape asymmetrical in the 1st edge | side side and 2nd edge | side side in the extending | stretching part 13b.

As shown by an arrow F2 in FIG. 7C, when the howling sheet 13 is attached to the mask frame 11, the both ends of the howling sheet 13 are stretched by applying a force in an outward direction (a direction away from each other). While (pulling), both ends of the howling sheet 13 are welded to predetermined positions in the grooves provided in the mask frame 11. And the unnecessary part outside a welded part in the howling sheet 13 is cut. Thereby, each howling sheet 13 is attached to a predetermined position of the mask frame 11.

In this embodiment, each howling sheet 13 is attached to the mask frame 11 so as to be parallel to the long side of the mask frame 11. The howling sheets 13 are attached to the mask frame 11 so as to be parallel to each other in the short-side direction of the mask frame 11.

As shown in FIG. 7 (c), the cover sheet 12 and the cover sheet 12 that face each other are attached to the mask frame 11 in a lattice shape so that the plurality of cover sheets 12 and the plurality of howling sheets 13 intersect each other. The opening 19 divided by the howling sheet 13 is formed side by side.

Next, as shown in step Sc of FIG. 6 and FIG. 7D, the alignment sheet 14 on which the alignment mark is formed is attached to the mask frame 11 so that the alignment mark is at a predetermined position (alignment sheet attaching step). ).

When the alignment sheet 14 is attached to the mask frame 11, as indicated by an arrow F3 in FIG. 7D, the both ends of the alignment sheet 14 are in outward directions (directions away from each other) and the mask frame 11 is short. It is welded to a predetermined position of the mask frame 11 while being stretched (pulled) by applying a force in a direction parallel to the side direction. Then, an unnecessary portion outside the welded portion in the alignment sheet 14 is cut. Thereby, each alignment sheet 14 is attached to a predetermined position of the mask frame 11. In the present embodiment, the two alignment sheets 14 are attached to the mask frame 11 so as to be parallel to each other along the short side of the frame opening 11 a of the mask frame 11.

Next, as shown in step Sd of FIG. 6 and (e) of FIG. 7, a plurality of mask sheets 15 are attached to the mask frame 11 (mask sheet attaching step). The mask sheet 15 is a sheet for patterning a vapor deposition layer in the pixel pix in the active region 57 shown in FIG.

Prior to step Sd, as step S101, before attaching the mask sheet 15 to the mask frame 11, an effective portion YA including a plurality of vapor deposition holes is formed on the mask sheet 15 (mask sheet formation). Process). The effective portion YA is formed for each active region 57 and has an area covering the active region 57.

In step Sd, as shown by an arrow F4 in FIG. 7E, when the mask sheet 15 is attached to the mask frame 11, a force is applied to each of both end portions of the mask sheet 15 in an outward direction (a direction away from each other). While being stretched (pulled), the mask sheet 15 is placed on the mask frame 11 so that the vapor deposition holes constituting the effective portion YA are at predetermined positions with reference to the alignment marks formed on the alignment sheet 14. Align.

When the mask sheet 15 is aligned with the mask frame 11 (in other words, with respect to the howling sheet 13), both ends of the mask sheet 15 are welded to the mask frame 11 with high accuracy.

Thereby, the mask sheet 15 is attached to the mask frame 11 so that the extending direction of the effective portion YA is orthogonal to the extending direction of each howling sheet 13.

Then, as shown in FIG. 7 (f), the mask sheet 15 is all necessary so that all the openings 19 defined by the cover sheet 12 and the howling sheet 13 that intersect each other are covered with the effective portion YA. After attaching the mask sheet 15 for the sheet to the mask frame 11, as shown in step Se of FIG. 6 and (f) of FIG. 7, unnecessary portions outside the welded portions of each mask sheet 15 are cut.

Thereby, the vapor deposition mask 10 is completed.

Next, as shown in step Sf of FIG. 6, various mask inspections such as foreign matter inspection and accuracy inspection are performed. Thereafter, the vapor deposition mask 10 having no problem in the mask inspection is stored in a stocker and supplied to a vapor deposition apparatus used in the vapor deposition process as necessary.

(Mask sheet 15 and effective portion YA)
FIG. 9 is a diagram illustrating the configuration of the mask sheet 15 of the first embodiment. 9A is a plan view of the mask sheet 15, and FIG. 9B is an enlarged view of the effective portion shown in FIG. 9A. FIG. 10 is a plan view of the vicinity of the effective portion YA of the vapor deposition mask 10. In FIG. 10, the mask sheet 15 is indicated by a broken line.

As shown in FIG. 9 (a), the mask sheet 15 has a strip shape, and is a magnetic body including a magnetic material such as an invar material as a base material. The mask sheet 15 can have a thickness of 10 μm to 50 μm, preferably 25 μm, for example. The mask sheet 15 is composed of a thin sheet in order to prevent the deposited layer from being unevenly thick.

A plurality of effective portions YA arranged in the long side direction of the mask sheet 15 are formed between both end portions of the mask sheet 15. In the effective portion YA, a plurality of vapor deposition holes H having a pattern and shape corresponding to the pixel pix are formed side by side. The effective portion YA is formed for each of the plurality of active regions 57 of the TFT substrate 30 and has an area that overlaps with each of the plurality of active regions 57.

As shown in FIG. 9B and FIG. 10, the effective portion YA has a first area YA1 and a second area YA2. The effective part YA has a quadrangle by a combination of the first area YA1 and the second area YA2.

The plurality of vapor deposition holes H constituting the effective portion YA have a pixel pix pattern (for example, any one of red light, green light, and blue light) arranged in the active region 57 and the pixel pix. It is formed so as to have the same pattern and shape as the shape.

The first area YA1 is formed for each active area 57 (see FIG. 2) and has a shape corresponding to the active area 57. The second area YA2 is an area different from the first area YA1 in the effective portion YA, and is an area overlapping the deformed portion of the howling sheet 13.

In the effective part YA, the vapor deposition hole H included in the first area YA penetrates, and the vapor deposition hole H included in the second area YA2 is shielded by the howling sheet 13.

The vapor deposition hole H included in the first area YA is a vapor deposition hole for patterning a vapor deposition layer for each pixel pix. The vapor deposition hole H included in the second area YA2 is a dummy vapor deposition hole that does not contribute to pattern formation of the vapor deposition layer for each pixel pix. The vapor deposition holes H in the second area YA2 have the same pitch and the same shape as the vapor deposition holes H in the first area YA1.

The effective part YA is a rectangle or a square formed by combining the first area YA1 and the second area YA2, and has a shape that is not deformed.

As shown in FIG. 10, for example, in the howling sheet 13 that overlaps with the effective portion YA, the curved portion 27a, the convex portion 27e, the curved portion 27b, the curved portion 27c, and the curved portion 27d are deformed portions of the active region 57. A corner 57a, a notch 57e, a corner 57b, a corner 57c, and a corner 57d are formed. Thus, the outer shape of the portion including at least the deformed portion in the outer shape of the first region YA1 is defined by the howling sheet 13.

For this reason, in the vapor deposition process, the effective portion YA and the howling sheet 13 can define the outer shape of the active region 57 while forming a vapor deposition layer in each pixel pix included in the active region 57 having the desired outer shape. .

(Howling sheet production process S101)
FIG. 11 is a diagram illustrating a flow of a howling sheet manufacturing step S101 according to the first embodiment. FIG. 12 is a diagram illustrating how a howling sheet according to the first embodiment is manufactured.

In step S111 (FIGS. 11 and 12 (a) and 12 (b)), a resist (first resist) 62 is patterned on the surface of the metal plate 61 by a known method (first resist forming step).

In step S111, the surface of the metal plate 61 is exposed on the bottom surface of the recess 62a of the resist 62. The planar shape of the recess 62a formed in the resist 62 is the same as the planar shape (FIG. 8) of the howling sheet 13 to be produced.

The metal plate 61 includes, for example, a magnetic material such as Ni, Cu, SUS, and Invar material.

Next, as shown in step S112 (FIGS. 11 and 12 (c)), the catalyst 63 is patterned by a known method on the metal plate 61 on which the resist 62 is formed (catalyst forming step).

The catalyst 63 is formed on the bottom surface of the recess 62 a of the resist 62 and on the surface of the metal plate 61. The catalyst 63 becomes a starting point for a reaction that replaces the metal material in the plating solution and the metal material constituting the metal plate 61 in the subsequent first plating process. The catalyst 63 can be made of, for example, a metal material containing Pd, Zn, or the like. The thickness of the catalyst 63 can be, for example, about 1 nm to 5 nm.

In step S113 (FIG. 11, FIG. 12 (d)), the first plating process is performed on the metal plate 61 on which the catalyst 63 and the resist 62 are formed, so that a magnetic layer having a desired thickness on the catalyst 63 ( First layer 113a is formed (first layer forming step, first plating treatment step). In addition, the planar shape of the magnetic layer 113a formed in step S113 is the same shape as the howling sheet 13 to be manufactured (FIG. 8).

In step S113, the metal plate 61 on which the resist 62 and the catalyst 63 are formed is immersed in a plating solution for plating.

In this step S113, an electroplating process may be used, but in the present embodiment, an electroless plating process is used. This is because the electroless plating process is less expensive and more convenient than the electroplating process.

Note that when the magnetic layer 113a is formed by electroplating, Ni or Fe—Ni plating (electroplating using a plating solution containing Ni or Fe—Ni) is preferable. In this case, formation of the catalyst 63 (that is, step S112) can be omitted.

As an electroless plating treatment, for example, an electroless Ni-P plating treatment using a plating solution containing Ni-P and having a high pH value, or an electroless treatment using a plating solution containing Ni-P-Fe Ni-P-Fe plating treatment can be used.

≪Electroless Ni-P plating treatment≫
An example of the composition of the plating solution, the processing conditions, and the processing time when the first plating process is performed by the electroless Ni-P plating process is as follows.

<Composition of plating solution>
Nickel sulfate heptahydrate: 50 g / L
Sodium hypophosphite (or sodium phosphinate): 12 g / L
Sodium acetate: 10g / L
As a chelating agent, sodium acetate may be replaced with potassium sodium tartrate (Rochelle salt), ethylenediaminetetraacetic acid (EDTA), lactic acid, propionic acid, sodium succinate, malic acid, sodium citrate, or glycolic acid.

Also, lead ions may be included as a stabilizer. This is because lead ions are contained in the film (not eutectoid), but do not affect the magnetic and non-magnetic properties of the product by plating.

<Processing conditions>
Plating solution temperature: 88 ℃ ± 1 ℃
pH: 5.2 to 5.5
In order to maintain the pH value during the plating process at a high pH value (5.2 to 5.5), it is preferable to gently stir the plating solution during the plating process. Examples of the stirring method include oxygen bubbling and positive driving.

By keeping the pH value of the plating solution during the plating process high, the eutectoid rate of P is lowered, and the deposited layer becomes highly magnetic.

Further, ammonia water and sulfuric acid can be used for adjusting the pH value. The pH value of the plating solution can be increased by mixing ammonia water in the plating solution. Further, the pH value of the plating solution can be lowered by mixing sulfuric acid with the plating solution.

<Processing time>
0.3 μm / min to 0.5 μm / min
For example, when the magnetic layer 113a having a thickness of 25 μm is formed and the deposition rate is 0.5 μm / min, the plating time required for forming the magnetic layer 113a is 50 min.

≪Electroless Ni-P-Fe plating process≫
An example of the composition of the plating solution, the processing conditions, and the processing time when the first plating process is performed by the electroless Ni—P—Fe plating process is as follows.

<Composition of plating solution>
Nickel sulfate heptahydrate: 18g / L
Iron sulfate heptahydrate: 6g / L
Sodium citrate: 13 g / L
Sodium tartrate dihydrate: 10.5g / L
Sodium hypophosphite (or sodium phosphinate): 6.5 g / L
Ammonium sulfate: 30 g / L
<Processing conditions>
Plating solution temperature: 80 ℃ ± 1 ℃
pH value: 9.0 to 9.5
In order to maintain the pH value during the plating process, it is preferable to gently stir the plating solution during the plating process. Examples of the stirring method include positive motion.

Also, the electroless Ni—P—Fe plating treatment is used to form the magnetic layer 113a because the nonmagnetic layer 113b cannot be formed even if the pH value of the plating solution is adjusted.

<Processing time>
0.2 μm / min
For example, the processing time required for forming a 25 μm magnetic layer 113a by electroless Ni—P—Fe plating and further combining the electroless Ni—P plating to form a 25 μm nonmagnetic layer 113b is as follows: It is.

Magnetic layer 113a: 250 min (0.2 μm / min: Ni—P—Fe plating solution)
Nonmagnetic layer 113b: 84 min (0.3 μm / min: Ni—P plating solution)
When the magnetic layer 113a having a desired thickness is formed in the recess 62a of the resist 62 in step S113 as described above, next, in step S114 (FIG. 11 and FIG. 12D), the second plating process is performed. By performing the above, a layer having a magnetic characteristic different from that of the magnetic layer 113a, that is, a nonmagnetic layer (second layer) 113b is formed on the magnetic layer 113a so as to have a desired thickness (second layer forming step, Second plating process). In addition, the planar shape of the nonmagnetic layer 113b formed in step S114 is the same shape as the howling sheet 13 to be manufactured (FIG. 8).

When the magnetic layer 113a is formed by the electroless Ni—P—Fe plating process in the above-described step S113, the electroless Ni—P plating process (second plating process) is performed by replacing the plating solution in this step S114. .

Alternatively, when the magnetic layer 113a is formed by the electroless Ni—P plating process in the above-described step S113, in this step S114, the magnetic layer 113a formed in the step S113 is immersed in a plating solution, and the plating is performed. By changing the pH value of the solution, the electroless Ni—P plating process (second plating process) is performed without stopping the plating process. Specifically, in step S114, sulfuric acid is added to the plating solution to lower the pH value of the plating solution in step S113.

In step S114, the pH value of the Ni-P plating solution is adjusted and maintained so that the pH value is as low as about 4.2 to 4.5.

By keeping the pH value of the plating solution during the plating process low, a layer having a low P eutectoid rate is formed and becomes low magnetic (non-magnetic). The nonmagnetic layer 113b becomes magnetic when fired at a high temperature. However, in the manufacturing process of the vapor deposition mask 10 and the manufacturing process of the display device 56 using the vapor deposition mask 10 according to the present embodiment, the nonmagnetic layer 113b is used. There is no problem because there is no process at such a high temperature that 113b changes to have magnetism.

The composition of the Ni-P plating solution is the same as that used in step S113.

The deposition rate in the case where the electroless Ni—P plating process is continuously performed in step S113 and step S114 is higher when the nonmagnetic layer 113b is formed in step S114 than when the magnetic layer 113a is formed in step S113. Become slow.

For example, when the nonmagnetic layer 113b having a thickness of 25 μm is formed, the deposition rate is 0.3 μm / min, and the plating time required for forming the nonmagnetic layer 113b is 84 min.

In step S114, when the nonmagnetic layer 113b having a desired thickness is formed on the magnetic layer 113a and in the recess 62a of the resist 62, the electroless plating process is terminated in step S115 (FIG. 11). The metal plate 61 on which the magnetic layer 113a and the nonmagnetic layer 113b are formed is taken out from the plating solution.

On the metal plate 61, the howling sheet 13 is formed on the magnetic layer 113 a with the nonmagnetic layer 113 b laminated in the recess 62 a of the resist 62 via the catalyst 63.

Next, in step S116 (FIGS. 11 and 12E), the resist 62 on the metal plate 61 is removed.

Then, in step S117 (FIG. 11 and FIG. 12G), the magnetic layer 113a and the nonmagnetic layer 113b are peeled from the metal plate 61. Thereby, the howling sheet 13 in which the nonmagnetic layer 113b is laminated on the entire surface of the magnetic layer 113a is completed. Note that when the magnetic layer 113a and the nonmagnetic layer 113b are peeled off from the metal plate 61 in step S117, the catalyst 63 may also adhere to the magnetic layer 113a and peel off. However, since the catalyst 63 is a very thin film having a thickness of about 1 nm to 5 nm, there is no problem even if it is attached to the magnetic layer 113a.

The planar shape of the completed howling sheet 13 is the shape shown as an example in FIG. That is, the howling sheet 13 having the extending portion 13b extending from one end portion to the other end portion and the projecting portions 27e, 27za, and 27zb protruding from the extending portion 13b in a shape corresponding to the deformed portion is formed by the step S101. can do.

In addition, (g) of FIG. 12 is the figure which looked at the convex part 27e in the howling sheet 13 from the front end side to the base part direction (The figure which looked at the convex part 27e in FIG. 8 from the right side on the paper surface). The extending portion 13b of the howling sheet 13 extends in the left-right direction on the paper surface in FIG.

Note that the howling is achieved by reversing the step S113 (first plating treatment) and the step S114 (second plating treatment) to form the nonmagnetic layer 113b first, and laminating the magnetic layer 113a on the nonmagnetic layer 113b. The sheet 13 may be formed.

Further, in the same manner as in step S101, the cover sheet 12 may be produced as a shape having irregularities corresponding to the irregularly shaped parts instead of the howling sheet 13, and the cover sheet 12 may be attached to the mask frame.

(Main effects of comparative example and howling sheet 13)
FIG. 13 is a plan view illustrating a configuration of a howling sheet 213 according to a comparative example of the first embodiment. The howling sheet 213 shown in FIG. 13 is entirely composed of only a magnetic layer among a magnetic layer and a nonmagnetic layer.

The planar shape and thickness of the howling sheet 213 are the same as those of the howling sheet 13. That is, the howling sheet 213 is provided with extending portions 213b, convex portions 227za, 227zb, and 227e provided in the same shape and the same positions as the extending portions 13b, convex portions 27za, 27zb, and 27e (FIG. 8) in the howling sheet 13. Have.

FIG. 14 is a diagram illustrating a state in which a deposition layer is deposited on the TFT substrate 30 using the deposition mask 210 according to the comparative example of the first embodiment.

The deposition mask 210 is configured to include a howling sheet 213 instead of the howling sheet 13 from the deposition mask 10. Other configurations of the vapor deposition mask 210 are the same as those of the vapor deposition mask 10. In FIG. 14, the vapor deposition mask 210 represents only the mask sheet 15 and the howling sheet 213, and other configurations are omitted. Moreover, in FIG. 14, the howling sheet | seat 213 represents the cross section cut in the direction orthogonal to the extending | stretching direction of the extending | stretching part 213b so that the convex part 227e may be passed.

As shown in FIG. 14, the vapor deposition step (step S12 (FIGS. 2 and 5)) is started, and the magnet 72 is brought close to the upper surface of the TFT substrate 30 disposed to face the vapor deposition mask 210.

Then, the magnetic force from the magnet 72 is applied to the cover sheet 12 (not shown in FIG. 14) and the howling sheet 213 intersecting in a lattice shape through the TFT substrate 30, thereby lifting the cover sheet 12 and the howling sheet 213. As a result, the cover sheet 12 and the howling sheet 213 intersecting in a lattice shape lifts the mask sheet 15 and brings the effective portion YA of the mask sheet 15 into close contact with the active region 57 (FIGS. 1 and 3) of the TFT substrate 30.

However, the howling sheet 213 is a support member that supports the mask sheet 15 and a shielding member that prevents the deposition layer from being deposited on the deformed portion of the active region 57 (FIGS. 1 and 3).

That is, the howling sheet 213 has a portion protruding from the extending portion 213b, such as a convex portion 227e, in order to shield the deformed portion of the active region 57. For this reason, compared with the case where the howling sheet | seat 213 is a shape which does not contain the part which protrudes from the extending | stretching part 213b, such as the convex part 227e, an area is large and the magnetic force received from the magnet 72 as a whole is large.

For this reason, when the magnet 72 is brought close to the upper surface of the TFT substrate 30 disposed opposite to the vapor deposition mask 210, a strong magnetic force is suddenly applied to the entire howling sheet 213. Then, a portion of the howling sheet 213 between both ends fixed to the mask frame 11 (FIG. 7) (particularly, a central portion of the howling sheet 213) suddenly lifts up and vigorously. Lift 15 up.

As a result, the howling sheet 213 and the mask sheet 15 are partly separated due to, for example, a state in which the howling sheet 213 or the mask sheet 15 is partially wrinkled or warped.

Further, in the howling sheet 213, the region where the convex portion 227e is formed has an asymmetric shape with respect to the extending portion 213b. For this reason, when the magnetic force from the magnet 72 is applied to the convex portion 227e non-uniformly, the convex portion 227e is lifted more vigorously than the extending portion 213b, and the mask sheet 15 is lifted first. In this case, a gap may be partially formed between the extending portion 213 b and the mask sheet 15.

As described above, when a gap is generated between the howling sheet 213 and the mask sheet 15, the effective portion YA of the mask sheet 15 and the active region 57 of the TFT substrate 30 are not completely brought into close contact with each other.

This gap is so-called that a part of the deposited layer deposited on the active region 57 of the TFT substrate 30 through the effective portion YA becomes thinner than a desired film thickness or has a larger area than a desired formation region. This causes a deposition failure called shadow. In addition, the light emitting layers or the hole transport layers are mixed with each other between adjacent pixels, which causes a deposition failure called so-called color mixture.

FIG. 15 is a diagram illustrating a state in which a deposition layer is deposited on the TFT substrate 30 using the deposition mask 10 of the first embodiment. In FIG. 15, the vapor deposition mask 10 represents only the mask sheet 15 and the howling sheet 13, and other configurations are omitted. Moreover, in FIG. 15, the howling sheet 13 represents the cross section cut in the direction orthogonal to the extending | stretching direction of the extending part 13b so that the convex part 27e may be passed.

As shown in FIG. 15, the vapor deposition step (step S12 (FIGS. 2 and 5)) is started, and the magnet 72 is brought close to the upper surface of the TFT substrate 30 arranged opposite to the vapor deposition mask 10.

Then, the magnetic force from the magnet 72 is applied to the cover sheet 12 (not shown in FIG. 15) and the howling sheet 13 intersecting in a lattice shape through the TFT substrate 30, thereby lifting the cover sheet 12 and the howling sheet 13. As a result, the cover sheet 12 and the howling sheet 13 intersecting in a lattice form lifts the mask sheet 15 and brings the effective portion YA of the mask sheet 15 into close contact with the active region of the TFT substrate 30.

Here, as described above, the howling sheet 13 has a configuration in which the nonmagnetic layer 113b is laminated on the magnetic layer 113a as a whole. Therefore, the entire howling sheet 13 is larger than the howling sheet 213 (FIGS. 13 and 14) even if the area is larger than the case where the howling sheet 13 has a shape that does not include a portion that protrudes from the extending portion 13 b such as the convex portion 27 e. As a result, the magnetic force received from the magnet 72 can be suppressed.

For this reason, when the magnet 72 is brought close to the upper surface of the TFT substrate 30 disposed opposite to the vapor deposition mask 10, a portion of the howling sheet 13 between both end portions fixed to the mask frame 11 (FIG. 7). Is lifted relatively gently, and the howling sheet 13 lifts the mask sheet 15 more slowly than the howling sheet 213.

As a result, it is possible to suppress the occurrence of a problem such as a partial wrinkle or a wrinkled state in the howling sheet 13 or the mask sheet 15, and to prevent a gap from being generated between the howling sheet 13 and the mask sheet 15. be able to.

Further, in the howling sheet 13, the region where the convex portion 27e is formed has an asymmetric shape with respect to the extending portion 13b. However, since the howling sheet 13 has a structure having the magnetic layer 113a and the nonmagnetic layer 113b as a whole including the convex portion 27e, the strength of the magnetic force applied from the magnet 72 is suppressed as a whole.

Therefore, as compared with the howling sheet 213, the convex portion 27e, the extending portion 13b, and the mask sheet 15 are gradually brought into contact with each other, and a gap is suppressed from being generated between the convex portion 27e, the extending portion 13b, and the mask sheet 15.

In particular, according to the howling sheet 13, the vapor deposition holes included in the second region YA2 of the effective portion YA can be more reliably shielded.

As described above, when the generation of a gap between the howling sheet 13 and the mask sheet 15 is suppressed, the effective portion YA of the mask sheet 15 and the active region 57 of the TFT substrate 30 are completely brought into close contact with each other.

As a result, the deposited layer deposited on the active region 57 of the TFT substrate 30 through the effective portion YA can be accurately patterned with an accurate film thickness and shape.

Note that the howling sheet 13 has a nonmagnetic layer 113b interposed between the magnetic layer 113a and the TFT substrate 30 in the vapor deposition step in the howling sheet attaching step (step Sb in FIG. 6 and (c) in FIG. 7). It is preferably attached to the mask frame 11.

That is, as shown in FIG. 15, the howling sheet 13 preferably has a magnetic layer 113 a formed on the side far from the mask sheet 15 and a non-magnetic layer 113 b formed on the side close to the mask sheet 15. This is because when the magnetic layer 113a is separated from the magnet 72, the effect of suppressing the strength of the magnetic force applied to the howling sheet 13 as a whole is high.

However, the howling sheet 13 is arranged such that the magnetic layer 113a is interposed between the nonmagnetic layer 113b and the TFT substrate 30 in the vapor deposition step in the howling sheet attaching step (step Sb in FIG. 6 and (c) in FIG. 7). The mask frame 11 may be attached.

That is, in the howling sheet 13, the nonmagnetic layer 113 b may be formed on the side far from the mask sheet 15, and the magnetic layer 113 a may be formed on the side close to the mask sheet 15. This also makes it possible to reduce the thickness of the magnetic layer 113a as compared with the case where the nonmagnetic layer 113b is not formed, and the magnetic force received from the magnet 72 as a whole is sufficiently larger than that of the howling sheet 213 (FIGS. 13 and 14). It is because it can suppress.

As described with reference to FIGS. 11 and 12D and 12E, in steps S113 and S114, the magnetic layer 113a and the magnetic layer 113a are changed by changing the pH value of the plating solution while continuing the plating process without stopping. Since the nonmagnetic layer 113b is formed continuously, the howling sheet 13 can be formed efficiently.

In addition, in steps S113 and S114, the ratio of the thickness of the magnetic layer 113a and the nonmagnetic layer 113b in the howling sheet 13 can be easily changed by adjusting the timing of changing the pH value of the plating solution. .

As described above, the howling sheet 13 includes the magnetic layer 113a and the nonmagnetic layer 113b that are continuously formed. Therefore, the boundary between the magnetic layer 113a and the nonmagnetic layer 113b gradually changes in characteristics from magnetic to nonmagnetic. It is formed as a single piece so as to have a gradation.

The howling sheet 13 may be formed by laminating the magnetic layer 113a and the nonmagnetic layer 113b, which are separately formed, instead of continuously forming the magnetic layer 113a and the nonmagnetic layer 113b.

Further, a magnetic layer may be further formed on the nonmagnetic layer 113b by raising the pH value of the plating solution again following the step S114 (FIG. 11, FIG. 12 (d)). That is, the howling sheet 13 may have at least a two-layer structure of the magnetic layer 113a and the nonmagnetic layer 113b, and may have a structure of three or more layers.

[Embodiment 2]
When performing the plating treatment for forming the howling sheet, a glass plate may be used instead of a metal plate.

FIG. 16 is a diagram illustrating a flow of step S101A for producing a howling sheet according to the second embodiment. FIG. 17 is a diagram illustrating how the howling sheet 13 according to the second embodiment is manufactured.

The deposition step S20 (FIG. 6) of the deposition mask 10 may include a step S101A instead of the step 101.

In step S101A, first, in step S111A (FIGS. 16 and 17 (a) and 17 (b)), a catalyst 63 is formed on the entire surface of the glass plate 65 by a known method (catalyst forming step). The catalyst 63 can be made of a metal material containing Pd, for example. The thickness of the catalyst 63 can be, for example, about 1 nm to 5 nm.

Next, in step S112A (FIG. 16, FIG. 17C), a resist 62 is patterned on the catalyst 63 by a known method (first resist forming step).

In the resist formation step, the surface of the catalyst 63 is exposed on the bottom surface of the recess 62a of the resist 62. The planar shape of the recess 62a formed in the resist 62 is the same as the planar shape (FIG. 8) of the howling sheet 13 to be produced.

Thereafter, similarly to FIG. 11 and FIG. 12D described in the first embodiment, in step S113 (FIG. 16, FIG. 17D), for example, electroless Ni—P—Fe plating treatment or high By the first plating process such as an electroless Ni-P plating process using a plating solution having a pH value (5.2 to 5.5), the magnetic layer 113a is formed in the recess 62a of the resist 62 and on the catalyst 63. (First plating treatment step, first layer formation step).

Next, in step S114 (FIG. 16, FIG. 17 (d)), for example, a second electroless Ni—P plating process using a plating solution having a low pH value (4.2 to 4.5) or the like. A nonmagnetic layer 113b is formed on the magnetic layer 113a in the recess 62a of the resist 62 by plating (second plating process, second layer forming process).

In step S115 (FIG. 16), the plating process is terminated, and the glass plate 65 on which the howling sheet 13 having the magnetic layer 113a and the nonmagnetic layer 113b on the catalyst 63 is formed is taken out from the plating solution.

Next, step S116 (as shown in FIGS. 16 and 17F), the resist 62 formed on the glass plate 65 via the catalyst 63 is removed (resist removing step).

And as shown to process S117 ((g) of FIG.16 and FIG.17), the magnetic layer 113a and the nonmagnetic layer 113b are peeled from the glass plate 65 (peeling process). Thereby, the howling sheet 13 in which the nonmagnetic layer 113b is laminated on the entire surface of the magnetic layer 113a is completed.

In this way, the howling sheet 13 in which the magnetic layer 113a and the nonmagnetic layer 113b are entirely formed may be formed.

[Embodiment 3]
A nonmagnetic layer may be added to the howling sheet already formed by the magnetic layer.

FIG. 18 is a diagram illustrating a flow of a howling sheet manufacturing step S101B according to the third embodiment. FIG. 19 is a diagram illustrating a manner in which a howling sheet 13B according to the third embodiment is manufactured. In addition, in FIG. 19, the cross-sectional shape of the howling sheet | seat is represented.

The manufacturing process S20 (FIG. 6) of the vapor deposition mask 10 may include a process S101B instead of the process 101.

In step S121 (FIG. 18 and FIG. 19 (a)), a howling sheet (first layer) 213, which is composed entirely of a magnetic layer and a nonmagnetic layer, is prepared. The howling sheet 213 prepared in step S121 may be prepared and prepared by a known method, or may be prepared by purchasing.

The planar shape of the howling sheet 213 is the same as that shown in FIG. The howling sheet 213 can be made of, for example, a magnetic material such as Ni, Fe, stainless steel (SUS), and Invar material.

Next, in step S122 (FIG. 18 and FIG. 19B), the catalyst 63 is formed so as to cover the entire surface of the howling sheet 213 (catalyst forming step). A catalyst can be comprised with metal materials, such as Pd and Zn, for example. The catalyst 63 is formed by a substitution process so as to have a thickness of about 1 nm to 5 nm, for example.

Then, in step S123 (FIG. 18 and FIG. 19 (c)), the howling sheet 213 covered with the catalyst 63 is treated with electroless Ni using a plating solution having a low pH value (4.2 to 4.5). The nonmagnetic layer 113 (second layer) Ba is formed on the catalyst 63 by performing the P plating process (second plating process).

In step S123, the howling sheet 213 covered with the catalyst 63 is immersed in the plating solution, and the plating process is started. The composition and pH value of the plating solution used in this step S123 are the same as when the nonmagnetic layer 113b was formed in step S114 (FIGS. 11 and 12 (e)).

Then, when the nonmagnetic layer 113Bb having a desired thickness is formed on the surface of the catalyst 63, the plating process is finished, and the howling sheet 213 on which the nonmagnetic layer 113Bb is formed is taken out from the plating solution.

This completes the howling sheet 13B in which the nonmagnetic layer 113Bb is laminated via the catalyst 63 on the entire howling sheet 213, which is a magnetic layer.

In step S123, after the nonmagnetic layer 113Bb is formed, the pH value of the plating solution is increased while the electroless Ni-P plating process is continued, or the electroless Ni-P-Fe plating process is performed. A magnetic layer may be formed on the nonmagnetic layer 113Bb.

According to the process 101B according to the third embodiment, the nonmagnetic layer 113Bb can be formed on the existing howling sheet 213 already formed by the magnetic layer.

[Embodiment 4]
The howling sheet may be formed with a nonmagnetic layer in part instead of the whole.

FIG. 20 is a diagram illustrating a flow of a howling sheet manufacturing step S101C according to the fourth embodiment. FIG. 21 is a diagram illustrating how a howling sheet 13C according to the fourth embodiment is manufactured. FIG. 22 is a cross-sectional view illustrating a configuration of a howling sheet 13C according to the fourth embodiment. FIG. 22 shows a cross section of the howling sheet 13C cut in a direction orthogonal to the extending direction of the howling sheet 13C so as to pass through the convex portion 27e.

The manufacturing process S20 (FIG. 6) of the vapor deposition mask 10 may include a process S101C instead of the process 101.

In step S101C, first, in step S111A (FIG. 20), the catalyst 63 is formed on the entire surface of the glass plate 65 (catalyst forming step), and then in step S112A (FIG. 20, FIG. 21A), the catalyst 63 is formed. A resist 62 is patterned on the top (first resist forming step).

In step S112A, the surface of the catalyst 63 is exposed on the bottom surface of the recess 62a of the resist 62. The planar shape of the recess 62a formed in the resist 62 is the same as the planar shape (FIG. 8) of the howling sheet 13 to be produced.

21 (a) shows a plane in the vicinity that becomes the convex portion 27e of the howling sheet 13C. In addition, in the howling sheet 13C, the length that the convex portion 27e (FIG. 8) protrudes from the extending portion 13b is longer than the length that the convex portion 27zb protrudes from the extending portion 13b.

Next, in step S113C (FIG. 20, FIG. 21 (b)), for example, electroless Ni—P—Fe plating treatment or no plating solution 80A having a high pH value (5.2 to 5.5) is used. A magnetic layer 113a is formed on the catalyst 63 in the recess 62a of the resist 62 by a first plating process such as an electrolytic Ni-P plating process (first plating process, first layer forming process).

In the fourth embodiment, in step S113C, the glass plate 65 is suspended by the support member 82 so that the convex portion 27e is below the extending portion 13b, and the resist 62 and the catalyst 63 are added to the plating solution 80A filled in the container 81. The electroless plating process is started by immersing the entire glass plate 65 on which is formed. As a result, the magnetic layer 113 a is formed on the catalyst 63 in the recess 62 a of the resist 62.

Thereby, as shown in FIG. 22A, in the magnetic layer 113a, the convex portion 27e and the extending portion 13b are formed with the same film thickness.

Next, in step S114C1 (FIG. 20, FIG. 21 (c)), for example, a second electroless Ni—P plating process using a plating solution having a low pH value (4.2 to 4.5) or the like. A nonmagnetic layer 113b is formed on the magnetic layer 113a of the convex portion 27e, which is a part of the magnetic layer 113a, by plating (second plating process, second layer forming process).

In step S114C1, when the electroless Ni—P—Fe plating process is performed in step S113C, the glass plate 65 in which the magnetic layer 113a is formed on the container 81 filled with the plating solution 80B having a low pH value. The convex portion 27e is immersed in the plating solution 80B, and the extending portion 13b moves to a position where it goes out of the plating solution 80B, and maintains that position.

Alternatively, in step S114C1, when the electroless Ni-P plating process is performed in step S113C, the plating process is continued by generating a plating solution 80B having a low pH value by lowering the pH value of the plating solution. The protrusion 27e is immersed in the plating solution 80B, and the extending portion 13b moves to a position where it goes out of the plating solution 80B, and the position is maintained.

Thereby, as shown in FIG. 22B, the nonmagnetic layer 113b is formed on the magnetic layer 113a of the convex portion 27e which is a part of the magnetic layer 113a. Here, since the extending portion 13b in the magnetic layer 113a is out of the plating solution 80B, the nonmagnetic layer 113b is not formed on the extending portion 13b in the magnetic layer 113a.

Thus, by performing the electroless plating process, the nonmagnetic layer 113b can be partially formed on a part of the magnetic layer 113a.

In step S114C1, the entire magnetic layer 113a may be placed in the plating solution 80B by covering the magnetic layer 113a with a jig that shields a region other than the convex portion 27e of the magnetic layer 113a. Also by this, only the convex portion 27e of the magnetic layer 113a is immersed in the plating solution 80B, and the region other than the convex portion 27e of the magnetic layer 113a is not immersed.

Next, in step S114C2 (FIG. 20, FIG. 21 (d)), for example, electroless Ni—P—Fe plating treatment or no plating solution 80A having a high pH value (5.2 to 5.5) is used. The magnetic layer 113a is formed on the magnetic layer 113a other than the convex portion 27e of the magnetic layer 113a by a third plating process such as an electrolytic Ni-P plating process (third plating process step). The treatment conditions of the third plating treatment, the composition of the plating solution, and the pH value are the same as those of the first plating treatment.

In step S114C2, the glass plate 65 on which the magnetic layer 113a and the nonmagnetic layer 113b are formed is transported onto a container filled with the electroless Ni—P—Fe plating solution, and the extending portion 13b is immersed in the plating solution. The convex portion 27e moves to the position where it goes out of the plating solution, and holds that position.

Alternatively, in step S114C2, the extending portion 13b is immersed in the plating solution while continuing the plating process by increasing the pH value of the plating solution 80B used in step S114C1 to generate a plating solution 80A having a high pH value. The convex portion 27e moves to the position where it goes out of the plating solution, and holds that position.

Thereby, as shown in FIG. 22C, the thickness of the magnetic layer 113a of the extending portion 13b, which is a part of the magnetic layer 113a, is increased, and the thickness of the extending portion 13b and the convex portion 27e becomes equal.

In step S114C2, the magnetic layer 113a and the nonmagnetic layer 113b are covered by covering the magnetic layer 113a and the nonmagnetic layer 113b with a jig that shields the region other than the convex portion 27e where the magnetic layer 113a and the nonmagnetic layer 113b are formed. The entire 113b may be placed in the plating solution. This also results in a state in which only the region of the magnetic layer 113a other than the nonmagnetic layer 113b laminated is immersed in the plating solution 80A.

When the magnetic layer 113a having a desired thickness is formed in step S114C2, the plating process is finished in step S115 (FIG. 20), and the glass plate 65 on which the magnetic layer 113a and the nonmagnetic layer 113b are formed is taken out from the plating solution. .

On the glass plate 65, a howling sheet 13C in which a nonmagnetic layer 113b is laminated on a part of the magnetic layer 113a is formed via a catalyst 63.

Next, in step S116 (FIG. 20), the resist 62 on the glass plate 65 is removed (resist removal step), and in step S117 (FIG. 20), the magnetic layer 113a in which the nonmagnetic layer 113b is partially formed from the glass plate 65. Is peeled off (peeling step). Thereby, a howling sheet 13C in which at least the nonmagnetic layer 113b is laminated on the convex portion 27e of the magnetic layer 113a is completed.

Since the howling sheet 13C has at least the nonmagnetic layer 113b laminated on the convex portion 27e of the magnetic layer 113a, the howling sheet 13C is composed of only the magnetic layer 113a out of the magnetic layer 113a and the nonmagnetic layer 113b. The magnetic force applied from the magnet 72 (FIG. 15) can be suppressed. Thereby, the howling sheet 13C can suppress a gap from being generated between the howling sheet 13C and the mask sheet 15 during vapor deposition.

In addition, in the howling sheet 13C, a nonmagnetic layer 113b is laminated on a convex portion 27e (FIGS. 8 and 15) that is asymmetric with respect to the extending portion 13b. Thereby, it can suppress more reliably that a clearance gap produces between the extending part 13b of the howling sheet 13C and the mask sheet 15 at the time of vapor deposition.

Note that step S114C2 is omitted, and in the howling sheet 13C, the thickness of the convex portion 27e (the thickness of the magnetic layer 113a and the nonmagnetic layer 113b) is larger than the thickness of the extending portion 13b (the thickness of the magnetic layer 113a). The plating process may be terminated.

[Embodiment 5]
The non-magnetic layer may be formed on a part of the howling sheet by performing the resist forming step a plurality of times.

FIG. 23 is a diagram illustrating a flow of a howling sheet manufacturing step S101D according to the fifth embodiment. FIG. 24 is a diagram illustrating how a howling sheet 13D according to the fifth embodiment is manufactured. 24D to 24H show sections of the howling sheet 13D cut in a direction orthogonal to the extending direction of the howling sheet 13D so as to pass through the convex portion 27e.

The manufacturing process S20 (FIG. 6) of the vapor deposition mask 10 may include a process S101D instead of the process 101.

In step S101D, first, in step S131 (FIGS. 23 and 24 (a) and (b)), a first resist 62D1 is pattern-formed on the surface of the metal plate 61 (first resist forming step).

In step S131, the surface of the metal plate 61 is exposed on the bottom surface of the recess 62D1a of the first resist 62D1. The planar shape of the recess 62D1a formed in the first resist 62D1 is the same as the planar shape (FIG. 8) of the howling sheet 13 to be produced.

Next, as shown in step S132 (FIG. 23, (c) in FIG. 24), the catalyst 63 is patterned by a known method on the metal plate 61 on which the first resist 62D1 is formed (catalyst forming step).

Then, in step S133 (FIG. 23, FIG. 24D), for example, electroless Ni—P—Fe plating treatment or electroless using a plating solution having a high pH value (5.2 to 5.5). The magnetic layer 113a is formed on the catalyst 63 in the recess 62D1a of the first resist 62D1 by a first plating process such as a Ni-P plating process (first plating process, first layer forming process). In addition, the planar shape of the magnetic layer 113a formed in step S133 is the same shape as the howling sheet 13 to be manufactured (FIG. 8).

Next, in step S134 (FIG. 23, FIG. 24 (e)), the magnetic layer 113a is removed from the plating solution from the metal plate 61 formed on the catalyst 63, and the magnetic layer 113a is in the recess 62D1a of the first resist 62D1. A second resist 62D2 is formed on 113a (second resist forming step).

In step S134, the convex portion 27e of the magnetic layer 113a is exposed on the bottom surface of the concave portion 62D2a of the second resist 62D2. That is, the planar shape of the concave portion 62D2a of the second resist 62D2 is the same as the planar shape of the convex portion 27e of the magnetic layer 113a, and the magnetic layer 113a and the first resist 62D1 other than the convex portion 27e of the magnetic layer 113a are 2 is covered with resist 62D2.

Next, in step S135 (FIG. 23, (f) in FIG. 24), a second plating process such as an electroless Ni—P plating process using a plating solution having a low pH value (4.2 to 4.5). Thus, the nonmagnetic layer 113b is formed in the concave portion 62D2a of the second resist 62D2 and on the convex portion 27e of the magnetic layer 113a (second plating process step, second layer forming step).

When the nonmagnetic layer 113b having a desired thickness is formed, in step S136 (FIG. 23), the plating process is finished, and the metal plate 61 on which the magnetic layer 113a and the nonmagnetic layer 113b are formed is taken out from the plating solution.

Next, in step S137 (FIG. 23, (g) in FIG. 24), the first resist 62D1 and the second resist 62D2 on the metal plate 61 are removed.

Then, in step S138 (FIG. 23 and FIG. 24 (h)), the magnetic layer 113a and the nonmagnetic layer 113b are peeled from the metal plate 61. Thereby, the howling sheet 13D in which the nonmagnetic layer 113b is laminated on a part of the magnetic layer 113a is completed.

In the howling sheet 13D, the nonmagnetic layer 113b is laminated on the convex portion 27e in the magnetic layer 113a.

In the howling sheet 13D, the thickness of the convex portion 27e (the thickness of the magnetic layer 113a and the nonmagnetic layer 113b) is thicker than the thickness of the extending portion 13b (the thickness of the magnetic layer 113a).

Also with this howling sheet 13D, it is possible to more reliably suppress the occurrence of a gap between the extending portion 13b of the howling sheet 13D and the mask sheet 15 during vapor deposition.

In the manufacturing process of the howling sheet 13D, the nonmagnetic layer 113b may be formed on the glass plate 65 via the catalyst 63 instead of the metal plate 61. In this case, in step S131D in step S101D, the catalyst 63 is formed on the entire surface of the glass plate 65, and then the first resist 62D1 is formed on the catalyst. Thereafter, the processes of steps S133 to S138 may be performed in order.

[Other displays]
The display (display device) according to the first to fifth embodiments is not particularly limited as long as it is a display panel including a display element. The display element is a display element whose luminance and transmittance are controlled by current. Display elements whose luminance and transmittance are controlled by this current include an EL (Electro Luminescence) display, a QLED (Quantum dot Light Emitting Diode) display, and the like. Examples of the EL display include an organic EL display including an OLED (Organic Light Emitting Diode), an inorganic EL display including an inorganic light emitting diode, and the like. A QLED display is a display with a QLED.

[Summary]
The manufacturing method of the vapor deposition mask which concerns on aspect 1 of this invention is a manufacturing method of the vapor deposition mask used in order to pattern a vapor deposition layer in the to-be-deposited board | substrate including the deformed part from which the external shape of a non-deposition area | region differs from a square A lower layer sheet forming step of forming a lower layer sheet having a projecting portion projecting from the stretched portion in a shape corresponding to the stretched portion extending from one end portion to the other end portion and the deformed portion, and the mask frame, the above A lower layer sheet attaching step for attaching the plurality of lower layer sheets formed in the lower layer sheet forming step, and an effective portion in which a plurality of vapor deposition holes are formed are provided in the mask frame to which the plurality of lower layer sheets are attached. A mask sheet attaching step for attaching a mask sheet, wherein the lower layer sheet forming step has a characteristic of either one of magnetic and non-magnetic. Directly or via another layer to layer, of the magnetic and non-magnetic, characterized in that it comprises a second layer forming step of forming a second layer having different properties than the first layer.

According to the above configuration, the lower layer sheet has both magnetic and non-magnetic characteristics by combining the first layer and the second layer. Thereby, compared with the case where a lower layer sheet | seat is comprised only from a magnetic layer, the magnetic force added to the said lower layer sheet | seat can be suppressed as a whole. Thereby, it can suppress that magnetic force is suddenly added to a lower layer sheet resulting from providing the said convex part. Thereby, at the time of vapor deposition of the vapor deposition layer to a vapor deposition substrate, the said lower layer sheet can suppress raising the said mask sheet vigorously, and it can suppress that a clearance gap arises between the said mask sheet and a vapor deposition substrate. As a result, it is possible to manufacture a deposition mask capable of depositing a deposition layer on the deposition target substrate with high accuracy.

The method for manufacturing a vapor deposition mask according to aspect 2 of the present invention is the above-described aspect 1, wherein the lower layer sheet includes a howling sheet attached to the mask frame so as to intersect the mask sheet, A howling sheet forming step of forming a howling sheet may be included, and the lower layer sheet attaching step may be a step of attaching the howling sheet to the mask frame.

In the manufacturing method of the vapor deposition mask which concerns on aspect 3 of this invention, in the said aspect 1 or 2, the said 1st layer is a magnetic layer, the said 2nd layer is a nonmagnetic layer, In the said lower layer sheet attachment process, The plurality of lower layer sheets may be attached to the mask frame such that the second layer is interposed between the first layer and the deposition substrate when the deposition layer is patterned on the deposition substrate.

In the method for manufacturing a vapor deposition mask according to Aspect 4 of the present invention, in the Aspects 1 to 3, the lower layer sheet forming step includes applying a first resist having a concave portion having the same planar shape as the planar shape of the lower layer sheet to the metal plate. A first resist forming step to be formed; a catalyst forming step for forming a catalyst on the bottom surface of the recess; a first plating process for forming the first layer on the catalyst in the recess by a first plating process; A second plating process for forming the second layer on the first layer in the recess by two plating processes; a resist removing process for removing the first resist; the first layer and the second layer; And a peeling step of peeling from the metal plate.

In the method for manufacturing a vapor deposition mask according to Aspect 5 of the present invention, in the Aspects 1 to 3, the lower layer sheet forming step includes a catalyst forming step of forming a catalyst on a glass plate, and a planar shape on the catalyst. A first resist forming step of forming a first resist having the same concave portion as the planar shape of the lower layer sheet, a first plating treatment step of forming the first layer on the catalyst in the concave portion by a first plating treatment, A second plating process for forming the second layer on the first layer in the recess by two plating processes; a resist removing process for removing the first resist; the first layer and the second layer; And a peeling step of peeling from the glass plate.

In the method for manufacturing a vapor deposition mask according to Aspect 6 of the present invention, in the Aspects 1 to 3, the lower layer sheet forming step includes a catalyst forming step of forming a catalyst so as to cover the surface of the first layer, and a second plating. You may have a 2nd plating process process which forms the said 2nd layer so that the surface of the said catalyst may be covered by a process.

In the method for manufacturing a vapor deposition mask according to aspect 7 of the present invention, in the above aspects 4 to 6, the planar shape of the first layer is the same as the planar shape of the lower layer sheet. The second layer may be formed on the entire surface of the first layer.

In the method for manufacturing a vapor deposition mask according to aspect 8 of the present invention, in the above aspect 4 or 5, the planar shape of the first layer is the same as the planar shape of the lower layer sheet. The second layer may be formed on the convex portion of the first layer.

In the method for manufacturing a vapor deposition mask according to Aspect 9 of the present invention, in the Aspect 8, the first layer has an extended portion, the convex portion is formed to protrude from the extended portion, and the second plating is performed. In the treatment step, the second layer is formed on the convex portion of the first layer by immersing the convex portion of the first layer in a plating solution and not immersing the extending portion in the plating solution. Also good.

A method for manufacturing a vapor deposition mask according to aspect 10 of the present invention is the method of aspect 8, wherein the first resist and the first layer are flattened between the first plating process and the second plating process. A second resist forming step of forming a second resist having a concave portion having the same shape as the planar shape of the convex portion of the first layer. In the resist removing step, the second layer is formed on the convex portion of the first layer. After forming, the first resist and the second resist may be removed.

The method for manufacturing a vapor deposition mask according to aspect 11 of the present invention is the above-described aspects 4, 5, 8 to 10, wherein in the first plating process, an electroless Ni-P plating process or an electroless Ni-Fe-P plating process is used. May be used.

In the method for manufacturing a vapor deposition mask according to aspect 12 of the present invention, in the above aspects 4, 5, 8 to 11, in the second plating process, the first layer formed in the first plating process is used as a plating solution. The pH value of the plating solution may be changed in the immersed state, and the second layer may be formed on the first layer.

In the method for manufacturing a vapor deposition mask according to Aspect 13 of the present invention, in the above Aspects 4, 6, and 8 to 10, the catalyst may contain Pd or Zn.

In the vapor deposition mask manufacturing method according to Aspect 14 of the present invention, in the Aspects 1 to 13, the lower layer sheet may include a cover sheet attached to the mask frame so as to extend along the mask sheet.

In the vapor deposition mask manufacturing method according to aspect 15 of the present invention, in the above aspects 1 to 14, in the mask sheet attaching step, the mask sheet may be stretched and attached to the mask frame.

The vapor deposition mask according to the sixteenth aspect of the present invention is a vapor deposition mask used for patterning a vapor deposition layer on a vapor deposition substrate including a deformed portion whose outer shape of the vapor deposition region is different from a quadrangle, and includes a mask frame, A plurality of lower layer sheets attached to the mask frame, and a plurality of lower layer sheets having a protruding portion protruding from the extending portion in a shape corresponding to the deformed portion and a extending portion extending from one end portion to the other end portion An effective portion provided with holes, and a mask sheet attached to the mask frame; and the lower layer sheet includes a first layer having one of magnetic and non-magnetic characteristics; The first layer is formed directly or via another layer, and includes a second layer having magnetic and nonmagnetic characteristics different from those of the first layer.

The vapor deposition mask manufacturing method according to aspect 17 of the present invention is the vapor deposition mask manufacturing method according to aspect 15, wherein the first layer is a magnetic layer, the second layer is a nonmagnetic layer, and the plurality of lower layer sheets are the vapor deposition target. When patterning the vapor deposition layer on the substrate, the mask frame may be attached so that the second layer is interposed between the first layer and the vapor deposition substrate.

In the vapor deposition mask manufacturing method according to Aspect 18 of the present invention, in the Aspect 16 or 17, the second layer may be formed at least on the convex portion of the first layer.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

10 Deposition mask 11 Mask frame 11a Frame opening 12 Cover sheet (lower layer sheet)
13, 13B-13D Howling sheet (lower sheet)
13b Stretching portion 14 Alignment sheet 15 Mask sheet 19 Openings 27a to 27d Curved portions 27e, 27za, 27zb Convex portion 30 TFT substrate (deposition substrate)
40 EL layer 42 hole transport layer (deposition layer)
43 Light-emitting layer (deposition layer)
56 display device 57 active area 58 frame area 61 metal plate 62 resist (first resist)
62a, 62D1a, 62D2a Recess 62D1 First resist 62D2 Second resist 63 Catalyst 65 Glass plate 70 Deposition source 72 Magnet 81 Container 82 Support member 113a Magnetic layer 113b / 113Bb Nonmagnetic layer pix Pixels S101, S101B to S101D Howling sheet manufacturing process ( Lower layer sheet forming process)
YA Effective part YA1 Effective part first area YA2 Effective part second area

Claims (18)

A method of manufacturing a vapor deposition mask used for patterning a vapor deposition layer on a vapor deposition substrate including a deformed portion having an outer shape different from a quadrangle in a non-vapor deposition region,
A lower layer sheet forming step of forming a lower layer sheet having a projecting portion projecting from the stretched portion in a shape corresponding to the stretched portion and the deformed portion extending from one end portion to the other end portion;
A lower layer sheet attaching step for attaching the plurality of lower layer sheets formed in the lower layer sheet forming step to the mask frame,
A mask sheet attaching step for attaching a mask sheet provided with an effective portion in which a plurality of vapor deposition holes are formed on the mask frame to which the plurality of lower layer sheets are attached,
The lower layer sheet forming step is different from the first layer in the magnetic and non-magnetic properties, either directly or via the other layer in the first layer having one of the magnetic properties and the non-magnetic properties. The manufacturing method of the vapor deposition mask characterized by including the 2nd layer formation process which forms the 2nd layer which has. The lower layer sheet includes a howling sheet attached to the mask frame so as to intersect the mask sheet,
The lower layer sheet forming step includes a howling sheet forming step of forming the howling sheet,
The method of manufacturing a vapor deposition mask according to claim 1, wherein the lower layer sheet attaching step is a step of attaching the howling sheet to the mask frame. The first layer is a magnetic layer, the second layer is a nonmagnetic layer,
In the lower layer sheet attaching step, the plurality of lower layer sheets are arranged so that the second layer is interposed between the first layer and the deposition substrate when the deposition layer is patterned on the deposition substrate. The method of manufacturing a vapor deposition mask according to claim 1, wherein the vapor deposition mask is attached to a mask frame. The lower layer sheet forming step,
A first resist forming step of forming, on the metal plate, a first resist having a concave portion having the same planar shape as the planar shape of the lower layer sheet;
A catalyst forming step of forming a catalyst on the bottom surface of the recess;
A first plating process for forming the first layer on the catalyst in the recess by a first plating process;
A second plating treatment step of forming the second layer on the first layer in the recess by a second plating treatment;
A resist removal step of removing the first resist;
The method for producing a vapor deposition mask according to any one of claims 1 to 3, further comprising a peeling step of peeling the first layer and the second layer from the metal plate. The lower layer sheet forming step,
A catalyst forming step of forming a catalyst on a glass plate;
A first resist forming step of forming a first resist having a concave portion having the same planar shape as the planar shape of the lower layer sheet on the catalyst;
A first plating process for forming the first layer on the catalyst in the recess by a first plating process;
A second plating treatment step of forming the second layer on the first layer in the recess by a second plating treatment;
A resist removal step of removing the first resist;
The method for producing a vapor deposition mask according to any one of claims 1 to 3, further comprising a peeling step of peeling the first layer and the second layer from the glass plate. The lower layer sheet forming step,
A catalyst forming step of forming a catalyst so as to cover the surface of the first layer;
The vapor deposition mask according to any one of claims 1 to 3, further comprising a second plating treatment step of forming the second layer so as to cover the surface of the catalyst by a second plating treatment. Production method. The planar shape of the first layer is the same as the planar shape of the lower layer sheet,
The vapor deposition mask manufacturing method according to any one of claims 4 to 6, wherein, in the second plating treatment step, the second layer is formed on the entire surface of the first layer. The planar shape of the first layer is the same as the planar shape of the lower layer sheet,
6. The method of manufacturing a vapor deposition mask according to claim 4, wherein, in the second plating treatment step, the second layer is formed on the convex portion of the first layer. The first layer has an extended portion, and the convex portion is formed to protrude from the extended portion,
In the second plating treatment step, the second layer is formed on the convex portion of the first layer by immersing the convex portion of the first layer in a plating solution and not immersing the extending portion in the plating solution. The method of manufacturing a vapor deposition mask according to claim 8, wherein: Between the first plating treatment step and the second plating treatment step, a second shape having a planar shape that is the same as the planar shape of the convex portion of the first layer on the first resist and the first layer. A second resist forming step of forming a resist;
9. The vapor deposition mask according to claim 8, wherein, in the resist removing step, the first resist and the second resist are removed after the second layer is formed on the convex portion of the first layer. Method. The electroless Ni-P plating process or the electroless Ni-Fe-P plating process is used in the first plating process, according to any one of claims 4, 5, and 8 to 10. A method for manufacturing a vapor deposition mask. In the second plating process, the pH value of the plating solution is changed while the first layer formed in the first plating process is immersed in the plating solution, and the second layer is applied to the first layer. 12. The method for producing a vapor deposition mask according to claim 4, wherein the vapor deposition mask is formed. The method for manufacturing a vapor deposition mask according to any one of claims 4, 6, and 8 to 10, wherein the catalyst contains Pd or Zn. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 13, wherein the lower layer sheet includes a cover sheet attached to the mask frame so as to extend along the mask sheet. 15. The vapor deposition mask manufacturing method according to claim 1, wherein, in the mask sheet attaching step, the mask sheet is stretched and attached to the mask frame. A vapor deposition mask used for patterning a vapor deposition layer on a vapor deposition substrate including a deformed portion whose outer shape of the vapor deposition region is different from a quadrangle,
Mask frame,
A plurality of lower layer sheets attached to the mask frame, each having an extending portion extending from one end portion to the other end portion and a protruding portion protruding from the extending portion in a shape corresponding to the deformed portion;
An effective portion having a plurality of vapor deposition holes is provided, and has a mask sheet attached to the mask frame,
The lower layer sheet is
A first layer having one of magnetic and non-magnetic properties;
A vapor deposition mask formed on the first layer directly or through another layer, and including a second layer having magnetic and nonmagnetic properties different from those of the first layer. The first layer is a magnetic layer, the second layer is a nonmagnetic layer,
The plurality of lower layer sheets are attached to the mask frame so that the second layer is interposed between the first layer and the deposition substrate when the deposition layer is patterned on the deposition substrate. The vapor deposition mask according to claim 15, wherein: The vapor deposition mask according to claim 16 or 17, wherein the second layer is formed at least on the convex portion of the first layer.

Images