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WO2019174067A1 - 阵列基板及触控显示装置 - Google Patents

阵列基板及触控显示装置 Download PDF

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Publication number
WO2019174067A1
WO2019174067A1 PCT/CN2018/080668 CN2018080668W WO2019174067A1 WO 2019174067 A1 WO2019174067 A1 WO 2019174067A1 CN 2018080668 W CN2018080668 W CN 2018080668W WO 2019174067 A1 WO2019174067 A1 WO 2019174067A1
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WIPO (PCT)
Prior art keywords
sub
thin film
film transistor
touch sensing
array substrate
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Ceased
Application number
PCT/CN2018/080668
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English (en)
French (fr)
Inventor
张源
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TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/776,285 priority Critical patent/US10747346B2/en
Publication of WO2019174067A1 publication Critical patent/WO2019174067A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
    • G02F2201/083—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer infrared absorbing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a touch display device.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • the touch panel provides a new human-computer interaction interface that is more direct and user-friendly.
  • the touch panel and the flat display device are integrated to form a touch display device, which can enable the flat display device to have a touch function, and can perform input through a finger, a stylus, etc., and the operation is more intuitive and simple.
  • liquid crystal displays and touch panels have been widely accepted and used, and replace conventional cathode ray tubes and physical key input devices, respectively.
  • the original touch display device usually uses a separate touch screen, that is, the touch panel is separately manufactured from the liquid crystal panel, and then assembled together.
  • the touch display device made by using such a manufacturing scheme is relatively thick, and more glass and film are added, and the transmittance and contrast of the liquid crystal panel are also significantly reduced, and the cost is high due to separate manufacturing, and the market is competitive. The power is falling.
  • a touch display device with a lighter weight, better display effect and lower cost is provided, and an embedded touch technology emerges as the times require.
  • the so-called embedded touch technology combines a touch panel and a liquid crystal panel. As one, and the touch panel function is embedded in the liquid crystal panel, the liquid crystal panel has the functions of displaying and sensing the touch input at the same time.
  • An object of the present invention is to provide an array substrate, which integrates a touch function into a sub-pixel unit, which can reduce production cost and prevent misoperation.
  • Another object of the present invention is to provide a touch display device that integrates a touch function into a sub-pixel unit, thereby reducing production costs and preventing erroneous operations.
  • the present invention provides an array substrate including a plurality of sub-pixel units arranged in an array, a plurality of touch sensing lines, and a plurality of DC power lines;
  • a touch sensing line is disposed corresponding to each column of sub-pixel units, and a DC power line is disposed corresponding to each row of sub-pixel units, and each of the sub-pixel units includes a photosensitive thin film transistor, and a gate of the photosensitive thin film transistor is floating.
  • the source is electrically connected to the DC power line corresponding to the row of the sub-pixel unit, and the drain is electrically connected to the touch sensing line corresponding to the column of the sub-pixel unit.
  • the array substrate further includes: a plurality of data lines and a plurality of scan lines, one data line is disposed corresponding to each column of sub-pixel units, and one scan line is disposed corresponding to each row of sub-pixel units, and each of the sub-pixel units further includes a switch thin film transistor and a pixel electrode, the gate of the switching thin film transistor is electrically connected to the scan line corresponding to the row of the sub-pixel unit, the source is electrically connected to the data line corresponding to the column of the sub-pixel unit, and the drain is electrically connected to the sub-pixel unit The pixel electrode.
  • the channel material of the photosensitive thin film transistor is amorphous silicon.
  • the photosensitive thin film transistor is an N-type thin film transistor.
  • the plurality of touch sensing lines are electrically connected to the touch sensing chip.
  • the touch sensing chip is integrated in a timing controller.
  • the DC power supply line, the scan line, the gate of the photosensitive thin film transistor, and the gate of the switching thin film transistor are all located in the first metal layer, and the touch sensing line, the data line, the source and the drain of the photosensitive thin film transistor
  • the source and the drain of the pole and switching thin film transistor are both located in the second metal layer, and the first metal layer and the second metal layer are insulated and laminated.
  • the materials of the first metal layer and the second metal layer are each a combination of one or more of molybdenum, aluminum, and copper.
  • the material of the pixel electrode is indium tin oxide.
  • the present invention also provides a touch display device comprising the above array substrate.
  • the invention further provides an array substrate, comprising a plurality of sub-pixel units arranged in an array, a plurality of touch sensing lines and a plurality of DC power lines;
  • a touch sensing line is disposed corresponding to each column of sub-pixel units, and a DC power line is disposed corresponding to each row of sub-pixel units, and each of the sub-pixel units includes a photosensitive thin film transistor, and a gate of the photosensitive thin film transistor is floating.
  • the source is electrically connected to the DC power line corresponding to the row of the sub-pixel unit, and the drain is electrically connected to the touch sensing line corresponding to the column of the sub-pixel unit;
  • the method further includes: a plurality of data lines and a plurality of scan lines, a data line is disposed corresponding to each column of sub-pixel units, and one scan line is disposed corresponding to each row of sub-pixel units, and each of the sub-pixel units further includes a switch thin film transistor and a pixel electrode, The gate of the switching thin film transistor is electrically connected to the scan line corresponding to the row of the sub-pixel unit, the source is electrically connected to the data line corresponding to the column of the sub-pixel unit, and the drain is electrically connected to the pixel electrode of the sub-pixel unit;
  • the channel material of the photosensitive thin film transistor is amorphous silicon
  • the photosensitive thin film transistor is an N-type thin film transistor
  • the plurality of touch sensing lines are electrically connected to the touch sensing chip.
  • the present invention provides an array substrate including a plurality of sub-pixel units arranged in an array, a plurality of touch sensing lines, and a plurality of DC power lines; and one touch sensing is disposed corresponding to each column of sub-pixel units.
  • a DC power line is disposed corresponding to each row of sub-pixel units, each of the sub-pixel units includes a photosensitive thin film transistor, the gate of the photosensitive thin film transistor is floating, and the source is electrically connected to the row of the sub-pixel unit
  • the DC power line is electrically connected to the touch sensing line corresponding to the column of the sub-pixel unit, and the photosensitive thin film transistor can absorb the infrared radiation emitted by the biological body when being touched by the biological device, thereby achieving conduction, and directing the DC
  • the voltage on the power line is transmitted to the touch sensing line to complete the touch sensing, and the touch function is integrated into the sub-pixel unit, and the touch panel is not required, which can reduce the production cost and prevent misoperation.
  • the invention also provides a touch display device, which integrates the touch function into the sub-pixel unit, can reduce the production cost and prevent misoperation.
  • FIG. 1 is a schematic view of an array substrate of the present invention
  • FIG. 2 is a schematic view showing the structure of a photosensitive thin film transistor in an array substrate of the present invention.
  • the present invention provides an array substrate, including a plurality of sub-pixel units 10 arranged in an array, a plurality of touch sensing lines 20, and a plurality of DC power lines 30;
  • a touch sensing line 20 is disposed corresponding to each column of sub-pixel units 10, and a DC power line 30 is disposed corresponding to each row of sub-pixel units 10.
  • Each of the sub-pixel units 10 includes a photosensitive thin film transistor T1. The gate of the thin film transistor T1 is floating, the source is electrically connected to the DC power line 30 corresponding to the row of the sub-pixel unit 10, and the drain is electrically connected to the touch sensing line 20 corresponding to the column of the sub-pixel unit 10.
  • the touch sensing module is further configured to provide a touch sensing chip electrically connected to the touch sensing line 20 for identifying the touch position according to the voltage received by the touch sensing line 20, specifically,
  • the touch sensing chip may be separately provided or integrated in a timing controller for controlling display timing.
  • the photosensitive thin film transistor is capable of absorbing infrared radiation emitted by a living being, and the infrared radiation excites electrons of a semiconductor layer of the photosensitive thin film transistor when electrons are accumulated in the semiconductor layer.
  • the source and the drain of the photosensitive thin film transistor are turned on, so that the voltage on the DC power line 30 electrically connected to the source is transmitted to the touch sensing line 20, and the touch is performed.
  • the sensing line 20 transmits the voltage to the touch sensing chip. After receiving the voltage, the touch sensing chip can recognize the position of the biological touch and implement the touch operation.
  • the infrared radiation is a characteristic of the living body, and the general non-biological body cannot emit infrared radiation, and the photosensitive thin film transistor cannot be triggered to be turned on, compared to the conventional capacitive or resistive touch.
  • the sensing device can perform the touch sensing through the photosensitive thin film transistor to effectively avoid false triggering, and can be directly integrated into the sub-pixel unit 10, and the production cost can be reduced without additionally manufacturing a touch panel or a separate touch circuit. Improve product competitiveness.
  • the array substrate of the present invention further includes: a plurality of data lines 40 and a plurality of scan lines 50, and a data line 40 is disposed corresponding to each column of sub-pixel units 10, corresponding to each row of sub-pixel units 10 a scan line 50, each of the sub-pixel units 10 further includes a switching thin film transistor T2 and a pixel electrode 60.
  • the gate of the switching thin film transistor T2 is electrically connected to the scan line 50 corresponding to the row of the sub-pixel unit 10, and the source is electrically The data line 40 corresponding to the column in which the sub-pixel unit 10 is located is connected, and the drain is electrically connected to the pixel electrode 60 of the sub-pixel unit 10.
  • the structure of a typical photosensitive thin film transistor is as shown in FIG. 2, and includes a substrate 101, a gate 102 provided on the substrate 101, and an insulating layer 103 covering the gate 102 and the substrate 101.
  • a doped layer 105 is formed between the 107 and the semiconductor layer 104, and the doped layer 105 is obtained by ion doping of a material of the semiconductor layer 104.
  • the material of the semiconductor layer 104 is amorphous silicon (a-Si), that is, the channel material of the photosensitive thin film transistor T1 is amorphous silicon, and the doped ions in the doped layer 105 are The N-type ions, that is, the doped layer 105 is N-type doped amorphous silicon, that is, the photosensitive thin film transistor T1 is an N-type thin film transistor.
  • a-Si amorphous silicon
  • the doped ions in the doped layer 105 are The N-type ions, that is, the doped layer 105 is N-type doped amorphous silicon, that is, the photosensitive thin film transistor T1 is an N-type thin film transistor.
  • the DC power line 30, the scan line 50, the gate of the photosensitive thin film transistor T1, and the gate of the switching thin film transistor T2 may be disposed on the first metal layer, the touch sensing line 20, and the data.
  • the line 40, the source and drain of the photosensitive thin film transistor T1, and the source and drain of the switching thin film transistor T2 are disposed on the second metal layer, and the first metal layer and the second metal layer are insulated and laminated.
  • the materials of the first metal layer and the second metal layer are each a combination of one or more of molybdenum, aluminum and copper.
  • the material of the pixel electrode 60 is indium tin oxide.
  • the present invention further provides a touch display device, including the above array substrate, wherein the touch display device performs a touch sensing process, including: a bio touches on the sub-pixel unit 10 of the touch display device
  • the photosensitive thin film transistor T1 emits infrared radiation; the photosensitive thin film transistor T1 in the sub-pixel unit 10 absorbs infrared radiation and is turned on, and transmits the voltage on the DC power supply line 30 to the touch sensing line 20 to realize Touch sensing.
  • the present invention provides an array substrate including a plurality of sub-pixel units arranged in an array, a plurality of touch sensing lines, and a plurality of DC power lines; and a touch sensing line is disposed corresponding to each column of sub-pixel units.
  • a DC power supply line is disposed corresponding to each row of the sub-pixel units, and each of the sub-pixel units includes a photosensitive thin film transistor, the gate of the photosensitive thin film transistor is floating, and the source is electrically connected to the row corresponding to the sub-pixel unit.
  • the drain is electrically connected to the touch sensing line corresponding to the column of the sub-pixel unit, and the photosensitive thin film transistor can absorb the infrared radiation emitted by the biological body when being touched by the biological device, thereby implementing conduction, and the DC power source is
  • the voltage on the line is transmitted to the touch sensing line to complete the touch sensing, and the touch function is integrated into the sub-pixel unit, and the touch panel is not required, which can reduce the production cost and prevent misoperation.
  • the invention also provides a touch display device, which integrates the touch function into the sub-pixel unit, can reduce the production cost and prevent misoperation.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Human Computer Interaction (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Position Input By Displaying (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供一种阵列基板及触控显示装置。所述阵列基板包括阵列排布的多个子像素单元、多条触控感测线及多条直流电源线；对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线，所述光敏型薄膜晶体管在被生物触摸时能够吸收生物发出的红外辐射，进而实现导通，将直流电源线上的电压传输到触控感测线中，完成触控感测，将触控功能集成到子像素单元中，无需额外设置触控面板，能够降低生产成本，防止误操作。

Description

阵列基板及触控显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及触控显示装置。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
触控面板(Touch panel)提供了一种新的人机互动界面，其在使用上更直接、更人性化。将触控面板与平面显示装置整合在一起，形成触控显示装置，能够使平面显示装置具有触控功能，可通过手指、触控笔等执行输入，操作更加直观、简便。
目前，液晶显示器及触控面板已经广泛地被人们所接受及使用，并且分别取代传统的阴极射线显像管和实体按键输入装置。最初的触控显示装置通常采用分离式触控屏，即将触控面板与液晶面板分开制造，然后通过组装的方式制作在一起。采用这种制造方案制得的触控显示装置比较厚，增加了较多的玻璃、薄膜，液晶面板的透光率与对比度也也会明显下降，而且由于分开制造，导致成本较高，市场竞争力下降。为了解决上述问题，提供一种更轻薄，有更好的显示效果且低成本的触控显示装置，嵌入式触控技术应运而生，所谓嵌入式触控技术是将触控面板和液晶面板结合为一体，并将触控面板功能嵌入到液晶面板内，使得液晶面板同时具备显示和感知触控输入的功能。
但无论是分离式触控屏还是嵌入式触控屏，都需要在显示区上设置基于电阻特性变化或电容特性变化来判断触摸区域的器件，生产成本较高，且上述器件在触控过程中无法识别是用户操作还是其他物体误触，容易出现误操作。
发明内容
本发明的目的在于提供一种阵列基板，将触控功能集成到子像素单元中，能够降低生产成本，防止误操作。
本发明的目的还在于提供一种触控显示装置，将触控功能集成到子像 素单元中，能够降低生产成本，防止误操作。
为实现上述目的，本发明提供了一种阵列基板，包括阵列排布的多个子像素单元、多条触控感测线及多条直流电源线；
对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线。
所述阵列基板还包括：多条数据线及多条扫描线，对应每一列子像素单元设置一条数据线，对应每一行子像素单元设置一条扫描线，每一个子像素单元还包括开关薄膜晶体管及像素电极，所述开关薄膜晶体管的栅极电性连接该子像素单元所在行对应的扫描线，源极电性连接该子像素单元所在列对应的数据线，漏极电性连接该子像素单元的像素电极。
所述光敏型薄膜晶体管的沟道材料为非晶硅。
所述光敏型薄膜晶体管为N型薄膜晶体管。
所述多条触控感测线电性连接触控感测芯片。
所述触控感测芯片集成于时序控制器中。
所述直流电源线、扫描线、光敏型薄膜晶体管的栅极及开关薄膜晶体管的栅极均位于第一金属层，所述触控感测线、数据线、光敏型薄膜晶体管的源极和漏极及开关薄膜晶体管的源极和漏极均位于第二金属层，所述第一金属层与第二金属层绝缘层叠。
所述第一金属层和第二金属层的材料均为钼、铝及铜中的一种或多种的组合。
所述像素电极的材料为氧化铟锡。
本发明还提供一种触控显示装置，包括上述的阵列基板。
本发明还提供一种阵列基板，包括阵列排布的多个子像素单元、多条触控感测线及多条直流电源线；
对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线；
还包括：多条数据线及多条扫描线，对应每一列子像素单元设置一条数据线，对应每一行子像素单元设置一条扫描线，每一个子像素单元还包括开关薄膜晶体管及像素电极，所述开关薄膜晶体管的栅极电性连接该子像素单元所在行对应的扫描线，源极电性连接该子像素单元所在列对应的 数据线，漏极电性连接该子像素单元的像素电极；
其中，所述光敏型薄膜晶体管的沟道材料为非晶硅；
其中，所述光敏型薄膜晶体管为N型薄膜晶体管；
其中，所述多条触控感测线电性连接触控感测芯片。
本发明的有益效果：本发明提供一种阵列基板，包括阵列排布的多个子像素单元、多条触控感测线及多条直流电源线；对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线，所述光敏型薄膜晶体管在被生物触摸时能够吸收生物发出的红外辐射，进而实现导通，将直流电源线上的电压传输到触控感测线中，完成触控感测，将触控功能集成到子像素单元中，无需额外设置触控面板，能够降低生产成本，防止误操作。本发明还提供一种触控显示装置，将触控功能集成到子像素单元中，能够降低生产成本，防止误操作。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的阵列基板的示意图；
图2为本发明的阵列基板中光敏型薄膜晶体管的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种阵列基板，包括阵列排布的多个子像素单元10、多条触控感测线20及多条直流电源线30；
其中，对应每一列子像素单元10设置一条触控感测线20，对应每一行子像素单元10设置一条直流电源线30，每一个子像素单元10均包括光敏型薄膜晶体管T1，所述光敏型薄膜晶体管T1的栅极浮置，源极电性连接该子像素单元10所在行对应的直流电源线30，漏极电性连接该子像素单元10所在列对应的触控感测线20。
具体实施时，完成触控操作识别还需要设置一与触控感测线20电性连接的触控感测芯片，用于根据触控感测线20接收到的电压识别触摸位置，具体地，所述触控感测芯片可以单独设置，也可以集成于用于控制显示时序的时序控制器中。
需要说明的是，所述光敏型薄膜晶体管在被生物触摸时，能够吸收生物发出的红外辐射，所述红外辐射激发所述光敏型薄膜晶体管的半导体层的电子，当所述半导体层中电子累计到一定程度后将导通所述光敏型薄膜晶体管的源极和漏极，从而将与所述源极电性连接的直流电源线30上的电压传输到触控感测线20上，触控感测线20再将该电压传输到触控感测芯片上，触控感测芯片接收到该电压后即可识别出生物触摸的位置，实现触控操作。
进一步地，所述红外辐射为生物体才有的特性，一般的非生物体不能发出红外辐射，也就无法触发所述光敏型薄膜晶体管导通，相比传统的电容式或电阻式的触控感测器件，通过光敏型薄膜晶体管进行触控感测能够有效避免误触发，且可直接集成到子像素单元10中，不需额外制作触控面板或独立的触控电路，能够降低生产成本，提升产品竞争力。
当然，为了实现正常的显示功能，本发明的阵列基板还包括：多条数据线40及多条扫描线50，对应每一列子像素单元10设置一条数据线40，对应每一行子像素单元10设置一条扫描线50，每一个子像素单元10还包括开关薄膜晶体管T2及像素电极60，所述开关薄膜晶体管T2的栅极电性连接该子像素单元10所在行对应的扫描线50，源极电性连接该子像素单元10所在列对应的数据线40，漏极电性连接该子像素单元10的像素电极60。
进一步地，如图2所示，典型的光敏型薄膜晶体管的结构如图2所示，包括基板101、设于基板101上的栅极102、覆盖所述栅极102和基板101的绝缘层103、位于所述绝缘层103上的半导体层104以及分别位于所述半导体层104上的两端且相互间隔的源极106和漏极107，同时在源极106与半导体层104之间以及漏极107与半导体层104之间均形成有掺杂层105，所述掺杂层105由所述半导体层104的材料通过离子掺杂得到。
优选地，所述半导体层104的材料为非晶硅(a-Si)，也即所述光敏型薄膜晶体管T1的沟道材料为非晶硅，所述掺杂层105中掺杂的离子为N型离子，即所述掺杂层105为N型掺杂的非晶硅，也即所述光敏型薄膜晶体管T1为N型薄膜晶体管。
具体制作时，可将所述直流电源线30、扫描线50、光敏型薄膜晶体管T1的栅极及开关薄膜晶体管T2的栅极设置于第一金属层，所述触控感测 线20、数据线40、光敏型薄膜晶体管T1的源极和漏极及开关薄膜晶体管T2的源极和漏极设置于第二金属层，所述第一金属层与第二金属层绝缘层叠。
优选地，所述第一金属层和第二金属层的材料均为钼、铝及铜中的一种或多种的组合。所述像素电极60的材料为氧化铟锡。
本发明还提供一种触控显示装置，包括上述的阵列基板，所述触控显示装置进行触控感测的过程包括：生物在所述触控显示装置的子像素单元10上进行触摸，向所述光敏型薄膜晶体管T1发出红外辐射；所述子像素单元10中的光敏型薄膜晶体管T1吸收红外辐射后导通，将直流电源线30上的电压传输到触控感测线20中，实现触控感测。
综上所述，本发明提供一种阵列基板，包括阵列排布的多个子像素单元、多条触控感测线及多条直流电源线；对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线，所述光敏型薄膜晶体管在被生物触摸时能够吸收生物发出的红外辐射，进而实现导通，将直流电源线上的电压传输到触控感测线中，完成触控感测，将触控功能集成到子像素单元中，无需额外设置触控面板，能够降低生产成本，防止误操作。本发明还提供一种触控显示装置，将触控功能集成到子像素单元中，能够降低生产成本，防止误操作。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种阵列基板，包括阵列排布的多个子像素单元、多条触控感测线及多条直流电源线；
    对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线。
  2. 如权利要求1所述的阵列基板，还包括：多条数据线及多条扫描线，对应每一列子像素单元设置一条数据线，对应每一行子像素单元设置一条扫描线，每一个子像素单元还包括开关薄膜晶体管及像素电极，所述开关薄膜晶体管的栅极电性连接该子像素单元所在行对应的扫描线，源极电性连接该子像素单元所在列对应的数据线，漏极电性连接该子像素单元的像素电极。
  3. 如权利要求1所述的阵列基板，其中，所述光敏型薄膜晶体管的沟道材料为非晶硅。
  4. 如权利要求1所述的阵列基板，其中，所述光敏型薄膜晶体管为N型薄膜晶体管。
  5. 如权利要求1所述的阵列基板，其中，所述多条触控感测线电性连接触控感测芯片。
  6. 如权利要求5所述的阵列基板，其中，所述触控感测芯片集成于时序控制器中。
  7. 如权利要求2所述的阵列基板，其中，所述直流电源线、扫描线、光敏型薄膜晶体管的栅极及开关薄膜晶体管的栅极均位于第一金属层，所述触控感测线、数据线、光敏型薄膜晶体管的源极和漏极及开关薄膜晶体管的源极和漏极均位于第二金属层，所述第一金属层与第二金属层绝缘层叠。
  8. 如权利要求7所述的阵列基板，其中，所述第一金属层和第二金属层的材料均为钼、铝及铜中的一种或多种的组合。
  9. 如权利要求2所述的阵列基板，其中，所述像素电极的材料为氧化铟锡。
  10. 一种触控显示装置，包括如权利要求1所述的阵列基板。
  11. 一种阵列基板，包括阵列排布的多个子像素单元、多条触控感测 线及多条直流电源线；
    对应每一列子像素单元设置一条触控感测线，对应每一行子像素单元设置一条直流电源线，每一个子像素单元均包括光敏型薄膜晶体管，所述光敏型薄膜晶体管的栅极浮置，源极电性连接该子像素单元所在行对应的直流电源线，漏极电性连接该子像素单元所在列对应的触控感测线；
    还包括：多条数据线及多条扫描线，对应每一列子像素单元设置一条数据线，对应每一行子像素单元设置一条扫描线，每一个子像素单元还包括开关薄膜晶体管及像素电极，所述开关薄膜晶体管的栅极电性连接该子像素单元所在行对应的扫描线，源极电性连接该子像素单元所在列对应的数据线，漏极电性连接该子像素单元的像素电极；
    其中，所述光敏型薄膜晶体管的沟道材料为非晶硅；
    其中，所述光敏型薄膜晶体管为N型薄膜晶体管；
    其中，所述多条触控感测线电性连接触控感测芯片。
  12. 如权利要求11所述的阵列基板，其中，所述触控感测芯片集成于时序控制器中。
  13. 如权利要求11所述的阵列基板，其中，所述直流电源线、扫描线、光敏型薄膜晶体管的栅极及开关薄膜晶体管的栅极均位于第一金属层，所述触控感测线、数据线、光敏型薄膜晶体管的源极和漏极及开关薄膜晶体管的源极和漏极均位于第二金属层，所述第一金属层与第二金属层绝缘层叠。
  14. 如权利要求13所述的阵列基板，其中，所述第一金属层和第二金属层的材料均为钼、铝及铜中的一种或多种的组合。
  15. 如权利要求11所述的阵列基板，其中，所述像素电极的材料为氧化铟锡。
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