[go: up one dir, main page]

WO2019155602A1 - Module optique - Google Patents

Module optique Download PDF

Info

Publication number
WO2019155602A1
WO2019155602A1 PCT/JP2018/004583 JP2018004583W WO2019155602A1 WO 2019155602 A1 WO2019155602 A1 WO 2019155602A1 JP 2018004583 W JP2018004583 W JP 2018004583W WO 2019155602 A1 WO2019155602 A1 WO 2019155602A1
Authority
WO
WIPO (PCT)
Prior art keywords
stem
optical module
thermal expansion
module according
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/004583
Other languages
English (en)
Japanese (ja)
Inventor
昭生 白崎
龍輝 大谷
岡田　規男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2018529080A priority Critical patent/JP6602479B1/ja
Priority to CN201880088591.9A priority patent/CN111712975B/zh
Priority to PCT/JP2018/004583 priority patent/WO2019155602A1/fr
Priority to US16/771,153 priority patent/US11862930B2/en
Priority to TW107112569A priority patent/TWI771405B/zh
Publication of WO2019155602A1 publication Critical patent/WO2019155602A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element

Definitions

  • This invention relates to an optical module.
  • the TO-CAN type package hermetically seals the semiconductor laser element by resistance welding a cylindrical cap with a lens attached to the stem.
  • the front light of the semiconductor laser element is condensed on the end face of the optical fiber through the lens. Thereby, the front light of the semiconductor laser element is coupled to the waveguide of the optical fiber, and an optical signal is transmitted.
  • the characteristics of semiconductor laser elements change sensitively with temperature.
  • the temperature of the semiconductor laser element is controlled to be constant by a TEC (Thermoelectric Cooler).
  • the TEC is a thermoelectric module in which a heat absorption substrate and a heat dissipation substrate with good thermal conductivity are attached to both ends of a Peltier element.
  • a semiconductor laser element is connected to the heat absorption substrate side, and a stem is connected to the heat dissipation substrate side. The side surface of the stem is in contact with the optical transceiver casing, and heat generated by the operation of the TEC is dissipated to the optical transceiver casing.
  • the TO-CAN type package disclosed in Patent Document 1 needs to fix the position of the lens with high accuracy in order to generate collimated light, resulting in an increase in assembly cost. Further, when a plastic plate is accommodated inside the package, there is a problem that the package length in the optical axis direction tends to be long.
  • An optical module includes a stem having a first surface, a second surface opposite to the first surface, a thermoelectric cooler having a heat dissipation substrate fixed to the first surface, and the thermoelectric cooler.
  • a semiconductor laser element attached to the first surface, a cap that is fixed to the first surface and covers the thermoelectric cooler and the semiconductor laser element, a lens that is fixed to the cap, and a restraint that is fixed to the second surface.
  • the linear thermal expansion coefficient of the heat radiating substrate and the restraint body is smaller than the linear thermal expansion coefficient of the stem.
  • thermoelectric cooler including a stem having a first surface, a second surface opposite to the first surface, and a side surface, and a heat dissipation substrate fixed to the first surface.
  • a semiconductor laser element attached to the thermoelectric cooler; a cap fixed to the first surface; covering the thermoelectric cooler and the semiconductor laser element; a lens fixed to the cap;
  • a constraining body fixed at a position closer to the second surface than the first surface, wherein the linear thermal expansion coefficient of the heat dissipation substrate and the constraining body is smaller than the linear thermal expansion coefficient of the stem.
  • the tracking error can be reduced easily and at low cost by sandwiching the stem between the thermoelectric cooler and the restraining body having a linear thermal expansion coefficient smaller than that of the stem.
  • FIG. 2 is a cross-sectional view of the optical module according to Embodiment 1.
  • FIG. It is sectional drawing of the optical module at the time of high temperature. It is sectional drawing of the optical module at the time of low temperature.
  • 6 is a cross-sectional view of an optical module according to Embodiment 2.
  • FIG. It is a bottom view of a stem or the like.
  • 6 is a cross-sectional view of an optical module according to Embodiment 3.
  • FIG. It is a top view of the restraint body etc. which concern on Embodiment 4.
  • FIG. 6 is a cross-sectional view of an optical module according to Embodiment 4.
  • FIG. It is sectional drawing of the optical module at the time of high temperature. It is a figure which shows the restraint body etc.
  • a semiconductor laser element 18 is attached to the thermoelectric cooler 16 by a heat dissipation block or the like. Specifically, the semiconductor laser element 18 is attached to the heat absorption substrate 16b by a heat dissipation block or the like.
  • the semiconductor laser element 18 is a laser diode, for example.
  • the semiconductor laser element 18 is subjected to temperature adjustment by the thermoelectric cooler 16.
  • the restraining body 30 is fixed to the second surface 13b.
  • the fixing method is not particularly limited, but for example, soldering using AuSn, SnAgCu, or the like. Or welding may be sufficient.
  • the restraining body 30 is, for example, a plate-like metal.
  • the linear thermal expansion coefficient of the restraint body 30 and the heat dissipation board 16 c is smaller than the linear thermal expansion coefficient of the stem 13. Any material that satisfies the relationship of the linear thermal expansion coefficient can be used as the material of the restraining body 30, the heat dissipation board 16c, and the stem 13.
  • the linear thermal expansion coefficient of the restraint body 30 is preferably smaller than the linear thermal expansion coefficient of the heat dissipation board 16c.
  • Power can be supplied to the semiconductor laser element 18 and the thermoelectric cooler 16 by providing a power supply lead pin that penetrates the stem 13. Since the temperature of the semiconductor laser element 18 is adjusted to be constant by the thermoelectric cooler 16, the optical signal output from the semiconductor laser element 18 is kept in high quality.
  • FIG. 2 is a diagram showing a state of thermal deformation of the optical module 10 at a high temperature.
  • FIG. 3 is a diagram showing a state of thermal deformation of the optical module 10 at a low temperature.
  • 2 and 3 relate to an optical module in which the linear thermal expansion coefficient of the heat dissipation board 16c is smaller than the linear thermal expansion coefficient of the stem 13, and the linear expansion coefficient of the restraining body 30 is smaller than the linear thermal expansion coefficient of the heat dissipation board 16c.
  • 2 and 3 show an optical fiber 32 that couples with the laser light from the semiconductor laser element 18.
  • FIG. 3 showing thermal deformation of the optical module 10 at a low temperature will be described. Since the restraint body 30 has a stronger force to restrain the thermal contraction of the stem 13 than the heat dissipation substrate 16c, the stem 13 warps convexly toward the restraint body 30 side. For this reason, the position of the semiconductor laser element 18 varies in the direction toward the stem 13. Since the position of the lens 22 also varies in the direction toward the stem 13 due to thermal contraction of the cap 20, variation in the distance between the semiconductor laser element 18 and the lens 22 due to thermal deformation can be suppressed.
  • the material of the stem 13 can be cold rolled steel such as SPCC.
  • the material of the heat dissipation substrate 16c can be, for example, aluminum nitride, that is, AlN or alumina.
  • the material of the restraint 30 can be, for example, aluminum nitride, alumina, kovar, or invar. In these materials, the linear thermal expansion coefficient of the restraint body 30 is set to be equal to or lower than the linear thermal expansion coefficient of the heat dissipation board 16c, and the linear thermal expansion coefficient of the stem 13 is made larger than the linear thermal expansion coefficients of the restraint body 30 and the heat dissipation board 16c. It is something that can be done. Further, when AlN or alumina is selected as the material of the restraint 30, the thermal conductivity of the restraint 30 can be made higher than the thermal conductivity of the stem 13. Can be prevented. These materials are examples.
  • the area and thickness of the restraint 30 can be made equal to or greater than the area and thickness of the heat dissipation board 16c. If the linear thermal expansion coefficient of the restraint body 30 is the same as the linear thermal expansion coefficient of the heat dissipation board 16c, the warp of the stem can be suppressed at least as compared with the case where no restraint body is provided. Further, if the linear thermal expansion coefficient of the restraint 30 is smaller than the linear thermal expansion coefficient of the heat dissipation board 16c, the direction of positional variation of the semiconductor laser element 18 and the lens 22 due to thermal deformation is coincident as shown in the first embodiment. Can be made.
  • FIG. 9 is a cross-sectional view of the optical module according to Embodiment 4 at a high temperature.
  • FIG. 9 shows that the stem 13 expands greatly on the first surface 13a side, but the expansion is restricted by the restraining body 50 on the second surface 13b side.
  • the optical module of the fourth embodiment does not require special processing such as providing a recess in the stem 13, so that an increase in the cost of the stem 13 can be avoided.
  • the optical module of the sixth embodiment shifts the peak of the coupling efficiency to the low temperature side in consideration of the sudden decrease in the coupling efficiency on the low temperature side when the joint strength between the stem 13 and the restraint 30 is weak. is there. Thereby, the coupling efficiency change which generate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Device Packages (AREA)
  • Glass Compositions (AREA)

Abstract

L'invention est caractérisée en ce qu'elle comprend une tige ayant une première surface et une seconde surface sur le côté opposé à la première surface, un refroidisseur thermoélectrique ayant une carte de dissipation de chaleur fixée sur la première surface, un élément laser à semi-conducteur monté sur le refroidisseur thermoélectrique, un capuchon fixé sur la première surface et disposé de manière à recouvrir le refroidisseur thermoélectrique et l'élément laser à semi-conducteur, une lentille fixée sur le capuchon, et un corps de retenue fixé sur la seconde surface, les coefficients de dilatation thermique linéaire de la carte de dissipation de chaleur et du corps de retenue étant inférieurs au coefficient de dilatation thermique linéaire de la tige.
PCT/JP2018/004583 2018-02-09 2018-02-09 Module optique Ceased WO2019155602A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018529080A JP6602479B1 (ja) 2018-02-09 2018-02-09 光モジュール
CN201880088591.9A CN111712975B (zh) 2018-02-09 2018-02-09 光模块
PCT/JP2018/004583 WO2019155602A1 (fr) 2018-02-09 2018-02-09 Module optique
US16/771,153 US11862930B2 (en) 2018-02-09 2018-02-09 Optical module having restriction body fixed to stem and having a linear thermal expansion coefficient smaller than that of the stem
TW107112569A TWI771405B (zh) 2018-02-09 2018-04-12 光模組

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/004583 WO2019155602A1 (fr) 2018-02-09 2018-02-09 Module optique

Publications (1)

Publication Number Publication Date
WO2019155602A1 true WO2019155602A1 (fr) 2019-08-15

Family

ID=67548260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/004583 Ceased WO2019155602A1 (fr) 2018-02-09 2018-02-09 Module optique

Country Status (5)

Country Link
US (1) US11862930B2 (fr)
JP (1) JP6602479B1 (fr)
CN (1) CN111712975B (fr)
TW (1) TWI771405B (fr)
WO (1) WO2019155602A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6593547B1 (ja) * 2018-04-16 2019-10-23 三菱電機株式会社 光モジュール
JP7466773B1 (ja) * 2022-12-23 2024-04-12 三菱電機株式会社 光モジュール

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114690338A (zh) * 2020-12-30 2022-07-01 华为技术有限公司 发送光组件、双向光组件、光模块、及光通信设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106577A (ja) * 2013-11-28 2015-06-08 三菱電機株式会社 光通信用半導体パッケージ
JP2017139416A (ja) * 2016-02-05 2017-08-10 三菱電機株式会社 光モジュール

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803361A (en) * 1986-05-26 1989-02-07 Hitachi, Ltd. Photoelectric device with optical fiber and laser emitting chip
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
JP3182171B2 (ja) * 1991-08-29 2001-07-03 富士通株式会社 光モジュール
JP3180701B2 (ja) * 1997-02-07 2001-06-25 日本電気株式会社 半導体レーザ装置
US6868104B2 (en) * 2001-09-06 2005-03-15 Finisar Corporation Compact laser package with integrated temperature control
JP4756840B2 (ja) 2004-09-13 2011-08-24 三菱電機株式会社 キャンパッケージ型光半導体装置および光モジュール
DE102005036266A1 (de) * 2005-07-11 2007-01-25 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
US7505495B2 (en) * 2005-12-30 2009-03-17 Agere Systems Inc. Optical assembly comprising multiple semiconductor optical devices and an active cooling device
JP2007208065A (ja) 2006-02-02 2007-08-16 Mitsubishi Electric Corp 光モジュール
US20080037601A1 (en) * 2006-07-07 2008-02-14 Torsana Laser Technologies A/S Avoiding temperature-related faults of a laser by temperature adjustment
CN201327944Y (zh) * 2008-12-22 2009-10-14 深圳市大族激光科技股份有限公司 激光器支撑装置
US8475056B2 (en) * 2009-07-28 2013-07-02 Jds Uniphase Corporation Semiconductor device assembly
JP2011108937A (ja) 2009-11-19 2011-06-02 Nippon Telegr & Teleph Corp <Ntt> Ｔｏ−ｃａｎ型ｔｏｓａモジュール
US8477822B2 (en) * 2010-09-01 2013-07-02 Futurewei Technologies, Inc. Compact transistor outline packaged laser with optical monitoring function
JP5724583B2 (ja) * 2011-04-22 2015-05-27 富士通オプティカルコンポーネンツ株式会社 光送信器および光送信装置
JP6265895B2 (ja) * 2012-06-22 2018-01-24 古河電気工業株式会社 光素子モジュール
JP6076151B2 (ja) 2012-12-06 2017-02-08 三菱電機株式会社 光モジュール及び光伝送方法
US9625671B2 (en) * 2013-10-23 2017-04-18 Lasermax, Inc. Laser module and system
CN103537795B (zh) * 2013-10-29 2016-03-30 西安炬光科技股份有限公司 高功率半导体激光器加工系统
US20190089126A1 (en) * 2017-09-20 2019-03-21 Phononic, Inc. Transistor outline (to) can package with integrated thermoelectric cooler
DE102019107146B4 (de) * 2019-01-30 2021-02-25 Jenoptik Optical Systems Gmbh Athermale Laseroptik aus Kunststoff

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106577A (ja) * 2013-11-28 2015-06-08 三菱電機株式会社 光通信用半導体パッケージ
JP2017139416A (ja) * 2016-02-05 2017-08-10 三菱電機株式会社 光モジュール

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6593547B1 (ja) * 2018-04-16 2019-10-23 三菱電機株式会社 光モジュール
JP7466773B1 (ja) * 2022-12-23 2024-04-12 三菱電機株式会社 光モジュール
WO2024134864A1 (fr) * 2022-12-23 2024-06-27 三菱電機株式会社 Module optique
JP2024091613A (ja) * 2022-12-23 2024-07-04 三菱電機株式会社 光モジュール
JP7734768B2 (ja) 2022-12-23 2025-09-05 三菱電機株式会社 光モジュール

Also Published As

Publication number Publication date
US11862930B2 (en) 2024-01-02
JPWO2019155602A1 (ja) 2020-02-27
US20210184424A1 (en) 2021-06-17
TW201935789A (zh) 2019-09-01
JP6602479B1 (ja) 2019-11-06
CN111712975B (zh) 2022-10-04
TWI771405B (zh) 2022-07-21
CN111712975A (zh) 2020-09-25

Similar Documents

Publication Publication Date Title
JP6753478B2 (ja) 光モジュール
JP6578976B2 (ja) 光モジュール
US20150116809A1 (en) Optical module
JP6602479B1 (ja) 光モジュール
CN104880780A (zh) 光模块及光传输方法
JP6593547B1 (ja) 光モジュール
US20140161391A1 (en) Optical module and optical transmission method
US12326603B2 (en) Optical module using a capacitor to suppress warpage
JP6042083B2 (ja) 半導体レーザモジュール及びその製造方法
US7869475B2 (en) Misalignment prevention in an external cavity laser having temperature stabilisation of the resonator and the gain medium
US7393146B2 (en) Optical module
WO2021010424A1 (fr) Module optique et procédé de fabrication de composant de module optique
US10277003B2 (en) Laser device and laser device manufacturing method
JP2006072171A (ja) 光モジュール
JP2814987B2 (ja) 半導体レーザモジュール
CN113620234B (zh) 芯片封装结构、控制方法以及光计算设备
JP2006324524A (ja) 発光モジュール
JP3420406B2 (ja) 光通信用モジュール
JP2007025433A (ja) 光素子モジュールおよび光送信器
JP2002299748A (ja) 半導体レーザモジュール実装体および半導体レーザモジュール
JPH04141606A (ja) 光電子装置
WO2020157853A1 (fr) Module de transmission optique

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2018529080

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18905137

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18905137

Country of ref document: EP

Kind code of ref document: A1