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WO2019147063A1 - Diode électroluminescente à semi-conducteurs et son procédé de fabrication - Google Patents

Diode électroluminescente à semi-conducteurs et son procédé de fabrication Download PDF

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Publication number
WO2019147063A1
WO2019147063A1 PCT/KR2019/001089 KR2019001089W WO2019147063A1 WO 2019147063 A1 WO2019147063 A1 WO 2019147063A1 KR 2019001089 W KR2019001089 W KR 2019001089W WO 2019147063 A1 WO2019147063 A1 WO 2019147063A1
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Prior art keywords
emitting device
semiconductor light
light emitting
layer
device chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2019/001089
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English (en)
Korean (ko)
Inventor
김경민
정겨울
전수근
길영운
박준천
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semicon Light Co Ltd
Original Assignee
Semicon Light Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180010470A external-priority patent/KR102100752B1/ko
Priority claimed from KR1020180010468A external-priority patent/KR102017732B1/ko
Priority claimed from KR1020180010478A external-priority patent/KR102017733B1/ko
Priority claimed from KR1020180010469A external-priority patent/KR102066518B1/ko
Priority claimed from KR1020180015695A external-priority patent/KR101946243B1/ko
Priority claimed from KR1020180023051A external-priority patent/KR102051477B1/ko
Application filed by Semicon Light Co Ltd filed Critical Semicon Light Co Ltd
Publication of WO2019147063A1 publication Critical patent/WO2019147063A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • the present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device including a plurality of semiconductor light emitting device chips emitting different colors.
  • the present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device including a vertical chip.
  • the present disclosure relates generally to a method of manufacturing a semiconductor light emitting device, and more particularly, to a method of manufacturing a CSP (Chip Scale Package) type semiconductor light emitting device with enhanced light emitting efficiency.
  • CSP Chip Scale Package
  • the present disclosure relates generally to a semiconductor light emitting device chip, and more particularly, to a method of manufacturing a semiconductor light emitting device chip having an electrode structure for lowering an operating voltage.
  • the semiconductor light-emitting device chip refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light-emitting device chip.
  • the Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y?
  • FIG. 1 is a view showing an example of a conventional semiconductor light emitting device chip.
  • the semiconductor light emitting device chip includes a growth substrate 10 (e.g., sapphire substrate), a buffer layer 20 as a plurality of semiconductor layers on a growth substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., n-type GaN layer An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of electrons and holes, a second semiconductor layer 50 having a second conductivity different from the first conductivity (e.g., p- A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30, Electrodes 80 (e.g., Cr / Ni / Au laminated metal pads) serving as pads are formed.
  • a growth substrate 10 e.g., sapphire substrate
  • a buffer layer 20 as a plurality of semiconductor layers on a growth substrate
  • a first semiconductor layer 30 having a first conductivity e.
  • the buffer layer 20 may be omitted.
  • the semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular.
  • the outside where the semiconductor light emitting device chip or the semiconductor light emitting device is electrically connected means a printed circuit board (PCB), a submount, a TFT (Thin Film Transistor), or the like.
  • FIG. 2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.
  • the semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have.
  • the first electrode film 90 may be an Ag reflective film
  • the second electrode film 91 may be an Ni diffusion prevention film
  • the third electrode film 92 may be an Au bonding layer.
  • An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching.
  • the semiconductor light emitting device chip of the type shown in FIG. 2 is called a flip chip.
  • the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, .
  • the height reference may be a height from the growth substrate 10.
  • the semiconductor light emitting device chip includes a vertical chip in addition to a lateral chip or a flip chip.
  • FIG. 3 is a view showing another example of the semiconductor light emitting device chip disclosed in U.S. Patent No. 8,008,683. For ease of explanation, the drawing symbols have been changed.
  • the semiconductor light emitting device chip includes a first semiconductor layer 30 having a first conductivity, an active layer 40 generating light through recombination of electrons and holes, a second semiconductor layer 50 having a second conductivity different from the first conductivity
  • the upper electrode 31 is electrically connected to the outside using wire bonding. And serves as a mounting surface when the lower electrode 52 side is electrically connected to the outside.
  • a semiconductor light emitting device chip having a structure in which electrodes 31 and 52 are provided one above and below the active layer 40 is referred to as a vertical chip.
  • FIG. 4 is a view showing an example of a conventional semiconductor light emitting device.
  • the semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140.
  • the cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength converting material 160.
  • the lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180.
  • a part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light.
  • the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light.
  • FIG. 4 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150 shown in FIG. 3. However, using the semiconductor light emitting device chip shown in FIGS. 1 and 2, The device may be manufactured.
  • the semiconductor light emitting device of the type shown in FIG. 4 is generally referred to as a package type semiconductor light emitting device, and the semiconductor light emitting device of a semiconductor light emitting device chip size is referred to as a CSP (chip scale package) type semiconductor light emitting device.
  • CSP chip scale package
  • Related to the CSP type semiconductor light emitting device is disclosed in Korean Patent Laid-Open Publication No. 2014-0127457. In recent years, the semiconductor light emitting device has been actively developed for a CSP type semiconductor light emitting device due to the tendency that the size of the semiconductor light emitting device is reduced.
  • the present disclosure is directed to a CSP type semiconductor light emitting device. Furthermore, flip chip is advantageous in that it can be electrically connected directly to an external substrate without wire bonding, but in the case of a semiconductor light emitting device chip that emits red light, it is more efficient to produce a vertical chip than a flip chip. Accordingly, the present disclosure relates to a CSP semiconductor light emitting device which can be used without a wire bonding like a flip chip even though a vertical chip is used.
  • Fig. 5 is a diagram showing an example of the LED display disclosed in Japanese Laid-Open Patent Publication No. 1995-288341. For ease of explanation, the drawing symbols have been changed.
  • FIG. 5 is a top view 190 showing a pixel structure in an LED display.
  • the structure of the pixel is such that the semiconductor light emitting device chips 194, 195, and 196 are electrically connected to the conductor layer 191 formed on the PCB.
  • the semiconductor light emitting device chip 194 for emitting blue light is electrically connected to the conductor layer 191 through wire bonding with a lateral chip and is bonded to the conductor layer 191 with an insulating adhesive 193.
  • the semiconductor light emitting device chips 195 and 196 emitting green and red light are electrically connected to the conductor layer 191 through a conductive adhesive 197 and wire bonding as a vertical chip. And is surrounded by a cover part 192 to distinguish it from other adjacent pixels.
  • the sealing material covers the semiconductor light emitting device chips 194, 195, and 196 to protect the semiconductor light emitting device chips 194, 195, and 196.
  • the semiconductor light emitting device chip is directly connected to the PCB and separated from other adjacent pixels by using a cover part and a sealing material.
  • a cover part and a sealing material there is a problem in that only a semiconductor light emitting device chip constituting the pixel is separated from the PCB when a problem occurs in a plurality of pixels because the pixel is formed by directly connecting the semiconductor light emitting device chip on the PCB.
  • the present disclosure intends to provide an ultra-small semiconductor light emitting device constituting a pixel. Accordingly, there is an attempt to provide an ultra-small semiconductor light emitting device smaller than the size of a pixel of an LED display.
  • the semiconductor light emitting device according to the present disclosure may be connected to a PCB or the like so that only a semiconductor light emitting device constituting the pixel can be removed when there is a problem pixel, thereby facilitating the fabrication of the LED display.
  • FIG. 6 is a view showing another example of the semiconductor light emitting device chip disclosed in Korean Patent Laid-Open Publication No. 2015-0055390. For the sake of convenience of explanation, the drawing symbols have been partially changed.
  • the semiconductor light-emitting device chip is a flip chip, and includes a growth substrate 10 (e.g., a sapphire substrate), a plurality of semiconductor layers on a growth substrate 10, a buffer layer 20, a first semiconductor layer 30 : an n-type semiconductor layer) 40, an active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of electrons and holes, a second semiconductor layer 50 having a second conductivity different from the first conductivity. For example, a p-type semiconductor layer) are sequentially deposited.
  • the buffer layer 20 may be omitted.
  • a transparent conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed thereon and an electrode 80 serving as a bonding pad is formed on the exposed first semiconductor layer 30 : Cr / Ni / Au laminated metal pad).
  • the first ohmic electrode 51 formed on the first semiconductor layer (n-type semiconductor layer) and the second ohmic electrode 51 formed on the second semiconductor layer (p-type semiconductor layer) are formed in an electrode structure for lowering the operating voltage of the semiconductor light- And includes an ohmic electrode 52.
  • a semiconductor light emitting device chip that emits ultraviolet rays has actively been developed.
  • a plurality of semiconductor layers included in a semiconductor light emitting device chip that emits ultraviolet rays are conventionally used for a semiconductor light emitting device chip that emits light in a visible light region such as blue light It is otherwise based on aluminum gallium nitride (AlGaN) material.
  • AlGaN aluminum gallium nitride
  • a heat treatment at a high temperature of 900 ° C or more is required.
  • the second ohmic electrode formed on the second semiconductor layer by the second semiconductor layer (the p-type semiconductor layer)
  • the operating voltage of the semiconductor light emitting device chip that emits ultraviolet light is increased.
  • the present disclosure is based on an AlGaN material and solves the problem that a p-type semiconductor layer is thermally shocked in the process of forming a first ohmic electrode in an n-type semiconductor layer in a semiconductor light emitting device chip that emits ultraviolet light, A method of manufacturing a semiconductor light emitting device chip that emits ultraviolet light is provided.
  • the disclosure provides a semiconductor light emitting device electrically connected to the outside, comprising: a first semiconductor light emitting device chip; A second semiconductor light emitting element chip; Conductor; A first light-transmitting layer; A common electrode layer positioned between the first light-transmitting layer and the first semiconductor light-emitting element chip, the second semiconductor light-emitting element chip and the conductor; And a non-light-emitting layer for shielding light emitted from the side surface of the semiconductor light-emitting device.
  • the conductor is provided with a semiconductor light-emitting device for electrically connecting the outside and the common electrode layer.
  • a semiconductor light emitting device electrically connected to the outside, comprising: a first semiconductor light emitting device chip; A second semiconductor light emitting element chip; Conductor; A non-light-emitting layer surrounding at least a part of a side surface of the first semiconductor light-emitting element chip, the second semiconductor light-emitting element chip and the conductor; A common electrode layer formed on the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, and the conductor; And a first transparent layer covering the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, the conductor, and the common electrode layer, wherein the common electrode layer includes a first transparent layer formed inside the first transparent layer, There is provided a semiconductor light emitting device for electrically connecting an outside and a common electrode layer.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a substrate; arranging a plurality of semiconductor light emitting device chips and a conductor on a substrate; Forming a plurality of semiconductor light-emitting device chips and a non-light-transmitting layer surrounding at least a portion of the side surface of the conductor; Forming a common electrode layer for electrically connecting the plurality of semiconductor light emitting device chips and the conductor; And forming a first light-transmitting layer including a common electrode layer inside the first light-transmitting layer, the method comprising: forming a first light-transmitting layer covering a plurality of semiconductor light-emitting device chips, A device manufacturing method is provided.
  • a semiconductor light emitting device comprising: a first light-transmitting layer; A common electrode layer formed on one surface of the first light-transmitting layer; A semiconductor light emitting device chip electrically connected to the common electrode layer; A conductor electrically connected to the common electrode layer; And a second light-transmitting layer which surrounds at least a part of the side surface of the semiconductor light-emitting element chip and the conductor.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a first light-transmitting layer; Forming a common electrode layer on one surface of the first light-transmitting layer; Electrically connecting the semiconductor light emitting device chip and the conductor to the common electrode layer; And forming a second light-transmitting layer covering the semiconductor light-emitting device chip and the conductor.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip; Conductor; A second light-transmitting layer surrounding at least a part of a side surface of the semiconductor light-emitting device chip and the conductor; A common electrode layer formed on the semiconductor light-emitting device chip, the conductor and the second light-transmitting layer; And a first light-transmitting layer covering the semiconductor light-emitting device chip, the conductor, the second light-transmitting layer, and the common electrode layer, wherein the common electrode layer is formed in the first light-transmitting layer.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a substrate; arranging a semiconductor light emitting device chip and a conductor on the substrate; Forming a second light-transmitting layer surrounding at least a part of the side surface of the semiconductor light-emitting device chip and the conductor; Forming a common electrode layer electrically connecting the semiconductor light emitting device chip and the conductor on the semiconductor light emitting device chip, the conductor, and the second transparent layer; And forming a first light-transmitting layer in which a common electrode layer is formed inside the first light-transmitting layer, the method comprising: forming a first light-transmitting layer covering the semiconductor light-emitting device chip, the conductor and the common electrode layer; Method is provided.
  • a method of manufacturing a semiconductor light emitting device comprising: applying a second encapsulant on a first encapsulant; Disposing a semiconductor light emitting device chip having an electrode on a second encapsulant using light and holes formed on the second encapsulant; and disposing the semiconductor light emitting device chip so that the electrode of the semiconductor light emitting device chip is exposed.
  • the second encapsulant surrounding at least a portion of a side surface of the semiconductor light emitting device chip; Separately cutting and arranging the integrally bonded first encapsulant, the second encapsulant, and the semiconductor light emitting element chip; And forming a reflective wall by applying a reflective material to cover the first encapsulant and the second encapsulant, wherein the reflective wall includes a flat portion.
  • a method of manufacturing a semiconductor light emitting device chip comprising: forming a first semiconductor layer having a first conductivity over a growth substrate; Forming a plurality of semiconductor layers including a second semiconductor layer having conductivity and an active layer interposed between the first and second semiconductor layers and generating light through recombination of electrons and holes; Forming a protective layer covering the second semiconductor layer; Forming a first ohmic electrode electrically connected to the first semiconductor layer and performing a heat treatment at a first heat treatment temperature; Removing the protective layer; And forming a second ohmic electrode electrically connected to the second semiconductor layer and performing heat treatment at a second heat treatment temperature.
  • FIG. 1 is a view showing an example of a conventional semiconductor light emitting device chip
  • FIG. 2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436,
  • FIG. 3 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 8,008,683,
  • FIG. 4 is a view showing an example of a conventional semiconductor light emitting device
  • FIG. 5 is a view showing an example of an LED display shown in Japanese Laid-Open Patent Publication No. 1995-288341,
  • FIG. 6 is a view showing another example of a semiconductor light emitting device chip disclosed in Korean Patent Laid-Open Publication No. 2015-0055390,
  • FIG. 7 is a view showing an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 8 is a diagram illustrating various embodiments of a common electrode layer in accordance with the present disclosure.
  • FIG. 9 is a view showing an example of the operation principle of the semiconductor light emitting device according to the present disclosure.
  • FIG. 10 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 11 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 12 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 13 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 14 is a view showing various embodiments of the semiconductor light emitting device according to the present disclosure.
  • FIG. 15 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 16 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 17 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 15,
  • FIG. 18 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 16;
  • FIG. 19 is a view showing an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 20 is a diagram illustrating various embodiments of a common electrode layer in accordance with the present disclosure.
  • 21 is a view showing an example of the operation principle of the semiconductor light emitting device according to the present disclosure.
  • FIG. 22 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 23 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 24 is a view showing an example of the method of manufacturing the semiconductor light emitting device shown in FIG. 23,
  • 25 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 26 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 27 is a view for explaining the effect obtained when the reflection wall is formed as a sloped surface formed convexly in the lateral direction of the semiconductor light emitting device chip in the semiconductor light emitting device shown in FIG. 25 and FIG. 26;
  • 28 and 29 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 30 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 31 is a view showing an example of a semiconductor light emitting device chip according to the present disclosure.
  • FIG. 32 is a view showing an example of a method of manufacturing a semiconductor light emitting device chip according to the present disclosure
  • FIG. 33 is a view showing another example of a method of manufacturing a semiconductor light emitting device chip according to the present disclosure
  • 34 to 35 are views showing the advantages of the semiconductor light emitting device chip manufactured by the manufacturing method according to the present disclosure.
  • FIG. 7 is a view showing an example of a semiconductor light emitting device according to the present disclosure.
  • Fig. 7 (a) is a plan view
  • Fig. 7 (b) is a sectional view taken along AA '.
  • the semiconductor light emitting device 200 includes a first semiconductor light emitting device chip 210, a second semiconductor light emitting device chip 220, a first light transmitting layer 230, a first light transmitting layer 230, A common electrode layer 240 positioned between the first semiconductor light emitting device 210 and the second semiconductor light emitting device chip 220, a conductor 250 electrically connecting the common electrode layer 240 to the outside, And a non-light-transmissive layer 260 blocking light.
  • the first semiconductor light emitting device chip 210 and the second semiconductor light emitting device chip 220 are vertical chips shown in FIG. 3, but do not exclude a lateral chip or a flip chip.
  • the first semiconductor light emitting device chip 210 and the second semiconductor light emitting device chip 220 may emit different colors.
  • the first light-transmitting layer 230 is a layer made of a light-transmitting material.
  • the first light-transmitting layer 230 is preferably formed of a light-transmitting non-conductive material such as glass or sapphire.
  • the first light-transmitting layer 230 has a function of the common electrode layer 240, so that a separate common electrode layer 240 is not required.
  • the common electrode layer 240 is formed on the first light-transmitting layer 230 by vapor deposition or printing, the first light-transmitting layer 230 is preferably made of a hard material that does not bend well.
  • the common electrode layer 240 is a conductive layer electrically connected to the first semiconductor light emitting device chip 210, the second semiconductor light emitting device chip 220, and the conductor 250.
  • the common electrode layer 240 will be described again with reference to FIG.
  • the conductor 250 electrically connects the external electrode and the common electrode layer 240 when the semiconductor light emitting device 200 is electrically connected to the outside (e.g., PCB, submount, etc.).
  • the conductor 250 electrically connects the external electrode and the common electrode layer 240 without emitting light, unlike the semiconductor light emitting device chip. Therefore, the semiconductor light emitting device 200 is electrically connected to the first semiconductor light emitting device chip 210, And the second semiconductor light emitting device chip 220 can emit light. Details will be described with reference to FIG.
  • the material of the conductor 250 is a conductive material and can be either metal or non-metal.
  • the conductor 250 may be formed of copper (Cu). 7
  • the conductor 250 is not only made of a conductive material, but may be a structure in which a hole passing through an insulating material is filled with a conductive material (e.g., copper).
  • the non-light-transmissive layer 260 blocks the light emitted from the semiconductor light-emitting device chips 210 and 220 from protruding to the side of the semiconductor light-emitting device 200. Particularly, when the semiconductor light emitting device 200 is used for a pixel in an LED display, it is important to prevent light emitted from the semiconductor light emitting device 200 from affecting adjacent pixels.
  • the non-light-transmissive layer 260 preferably has a property of reflecting light. In order to improve the resolution of the LED display, it is preferable that the display is black.
  • the non-light-transmissive layer 260 may be formed of a material used for a black matrix such as a liquid crystal display (LCD).
  • the non-light-emitting layer 260 can be positioned between the first semiconductor light-emitting device chip 210, the second semiconductor light-emitting device chip 220, and the conductor 250 to improve the resolution.
  • the first semiconductor light emitting device chip 210 and the second semiconductor light emitting device 210 are electrically connected to each other by the non-light transmitting layer 260 located between the first semiconductor light emitting device chip 210, the second semiconductor light emitting device chip 220,
  • the non-light-emitting layer 260 is formed on the upper portion 270 of the first semiconductor light-emitting device chip 210 and the second semiconductor light-emitting device chip 220 so that the light emitted from the light- .
  • the first semiconductor light emitting device chip 210, the second semiconductor light emitting device chip 220, and the common electrode layer 240 may be formed in order to improve the electrical connection function between the first semiconductor light emitting device chip 210, the second semiconductor light emitting device chip 220,
  • the upper electrodes 211, 221 and 251 are formed on the second semiconductor light emitting device chip 220 and the conductor 250 and the upper electrodes 211, 221 and 251 corresponding to the upper electrodes 211, 221 and 251 are formed under the common electrode layer 240,
  • the electrode 241 can be formed.
  • the lower electrodes 212, 222, and 252 exposed from the non-light emitting layer 260 are electrically connected to the first semiconductor light emitting device chip 210, And may be formed below the semiconductor light emitting device chip 220 and the conductor 250, respectively.
  • FIG 8 is a view showing various embodiments of a common electrode layer according to the present disclosure.
  • the common electrode layer 240 may be formed on the entire surface of the first transparent layer 230 as shown in FIG. 8 (a). Or may be formed on a part of the first light-transmitting layer 230 as shown in FIG. 8 (b). Or may be formed in the form of a pattern electrically isolated from each other by the electric wires 242, as shown in FIG. 8 (c). For example, the pattern may be a grid pattern.
  • the common electrode layer 240 is formed as shown in FIGS. 8 (b) and 8 (c), the positions of the first semiconductor light emitting device chip 210, the second semiconductor light emitting device chip 220, Is preferably positioned as indicated by the dotted line. For example, when the common electrode layer 240 is formed as shown in FIG.
  • the common electrode layer 240 may be formed of a transparent material such as ITO (Indium Tin Oxide) so that light generated in the common electrode layer 240 may pass through the first transparent layer 230. 8 (b) and 8 (c) when the upper electrode is electrically connected to the common electrode layer 240 when the semiconductor light emitting device chips 210 and 220 and the conductor 250 include the upper electrode
  • the semiconductor light emitting device chips 210 and 220 and the conductors 250 may not necessarily be located in the common electrode layer 230.
  • FIG. 9 is a view showing an example of the operation principle of the semiconductor light emitting device according to the present disclosure. Only a part of the semiconductor light emitting device is shown for convenience of explanation.
  • FIG. 9A shows a current flow 213 when only the first semiconductor light emitting device 210 emits light
  • FIG. 9B shows a current flow 213 when the first semiconductor light emitting device 210 and the second semiconductor light emitting device 220 are turned on.
  • the current flows 213 and 223 are shown by arrows.
  • the conductive material 250 does not emit light and electrically connects the common electrode layer 230 and the external electrode. Therefore, the first semiconductor light-emitting device chip 210, as shown in FIGS. 9A and 9B, Or the second semiconductor light-emitting device chip 220 emits a unique color.
  • FIG. 10 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 300 includes a light emitting layer 340 and a common electrode layer 350 disposed between the light emitting layer 340 and the common electrode layer 350 located between the first semiconductor light emitting device chip 310 and the second semiconductor light emitting device chip 320, And a second light-transmitting layer 360.
  • the second light-emitting layer 360 surrounds a part of the side surfaces of the first semiconductor light-emitting device chip 310 and the second semiconductor light-emitting device chip 320, and the first semiconductor light-emitting device chip 310 and the second semiconductor light- Unlike the semiconductor light emitting device 200 shown in FIG.
  • the light 370 emitted from the side of the light emitting layer 320 is not blocked by the non-light emitting layer 340, so that light extraction efficiency can be improved.
  • the second light-transmitting layer 360 covers the active layers 311 and 321 of the first semiconductor light-emitting device chip 310 and the second semiconductor light-emitting device chip 320.
  • the semiconductor light emitting device 300 is substantially the same as the semiconductor light emitting device 200 described in FIG.
  • FIG. 11 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 400 includes a first semiconductor light emitting device chip 410, a second semiconductor light emitting device chip 420, a conductor 440, and a third semiconductor light emitting device chip 430.
  • the third semiconductor light emitting device chip 430 emits light of a color different from that of the first semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420.
  • the first semiconductor light emitting device chip 410 may emit blue light
  • the second semiconductor light emitting device chip 420 may emit red light
  • the third semiconductor light emitting device chip 430 may emit green light.
  • the semiconductor light emitting device 400 is substantially the same as the semiconductor light emitting device 300 described in Fig.
  • FIG. 12 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • the first light-transmitting layer 500 is prepared (S1). Then, a common electrode layer 510 is formed on one surface of the first light-transmitting layer 500 (S2).
  • the common electrode layer 510 can apply a light-transmitting conductive material to the entire surface or a part of one surface of the first light-transmitting layer 500.
  • a pattern as shown in FIG. 8C may be formed on one side of the first light-transmitting layer 500 using a light-transmitting conductive material. Pattern formation may be performed using, for example, pulsed eutectic.
  • the common electrode layer 510 is electrically connected to the first semiconductor light emitting device chip 520, the second semiconductor light emitting device chip 521, and the conductor 522 (S3).
  • the electrode 511 is formed on the common electrode layer 510 and then the first semiconductor light emitting device chip 520 and the second semiconductor light emitting device chip 521 and the conductor 522 are electrically connected to the common electrode layer 510 511 can be electrically connected by a direct eutectic bonding or a conductive adhesive without using a wire.
  • the third semiconductor light emitting device chip may further be electrically connected to the common electrode layer 510 if necessary.
  • a plurality of semiconductor light emitting element chips and conductors are arranged in a line, but this is for convenience of explanation. Arrangement of a plurality of semiconductor light-emitting element chips and conductors will be described with reference to Fig.
  • a groove 530 penetrating the common electrode layer 510 and the first transparent layer 500 is formed (S4). Thereafter, a groove 530, a plurality of semiconductor light-emitting device chips 520 and 521, and a non-light-emitting layer 540 covering the conductor 522 are formed (S5).
  • the non-light-emitting layer 540 When forming the non-light-emitting layer 540, the non-light-emitting layer 540 is covered or the plurality of semiconductor light-emitting device chips 520 and 521 are exposed to expose the upper surfaces of the plurality of semiconductor light-emitting device chips 520 and 521 and the conductors 522, The semiconductor light emitting device chip 520 and the conductor 522 are removed so that the upper surface of the semiconductor light emitting device chip 520 and the conductor 522 are exposed after the semiconductor light emitting device chip 520 and the conductor 522 are formed. (520, 521) and the lower electrode (523) of the conductor (522) are exposed from the non-light-emitting layer (540).
  • a plurality of semiconductor light emitting device chips 520 and 521 and a first light transmitting layer 500 are formed to allow light emitted from the plurality of semiconductor light emitting device chips 520 and 521 to pass through the first light transmitting layer 500,
  • the non-light-transmissive layer 540 is not formed in the space 524 between the light-
  • the space 524 may be filled with a light-transmitting material before the non-light-emitting layer 540 is formed.
  • the semiconductor light emitting device can be obtained by cutting along the cutting line 550 (S6).
  • FIG. 13 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a second light-transmitting layer 560 is formed after step S3 (S3-1).
  • the second light transmitting layer 560 does not completely cover the plurality of semiconductor light emitting device chips 520 and 521 and the conductor 522 but covers only a part of the side surface of the plurality of semiconductor light emitting device chips 520 and 521 and the conductor 522 .
  • step S4 shown in FIG. 12 is performed.
  • the groove 530 is formed through the first light-transmitting layer 500, the common electrode layer 510, and the second light-transmitting layer 560.
  • FIG. 14 is a view showing various embodiments of the semiconductor light emitting device according to the present disclosure.
  • the outer shape of the semiconductor light emitting device can be circular (610, 620) or rectangular (600), but is not limited thereto.
  • the semiconductor light emitting device chips 601, 602, 611, 612, 613, 621, 622, and 623 included in the semiconductor light emitting device and the conductors 603, 614, and 624 are electrically connected to the semiconductor light emitting devices 600, 610,
  • the semiconductor light emitting device may be variously arranged according to the shape of the semiconductor light emitting device according to the external shape or the shape suitable for minimizing the size of the semiconductor light emitting device or the shape in which the light emitted from each semiconductor light emitting device chip can be well mixed.
  • 15 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 700 includes a first semiconductor light emitting device chip 710, a second semiconductor light emitting device chip 720, a conductor 730, a common electrode layer 740, a first light transmitting layer 750, and a non- 760).
  • the first semiconductor light emitting device chip 710, the second semiconductor light emitting device chip 720, and the conductor 730 are electrically connected by the common electrode layer 740.
  • the first light-transmitting layer 750 covers the first semiconductor light-emitting element chip 710, the second semiconductor light-emitting element chip 720, the conductor 730, and the common electrode layer 740.
  • the common electrode layer 740 is formed in a pattern form as shown in Fig. 8 (c).
  • the non-light-transmitting layer 760 surrounds at least a part of the side surfaces of the first semiconductor light-emitting element chip 710, the second semiconductor light-emitting element chip 720, and the conductor 730.
  • the first semiconductor light emitting device chip 710 and the second semiconductor light emitting device chip 720 are preferably vertical chips.
  • the common electrode layer 740 is formed on the first semiconductor light emitting device chip 710 and the second semiconductor light emitting device chip 720 And is electrically connected to the electrodes 711 and 721.
  • the planar size of the electrode portion 741 of the common electrode layer 740 electrically connected to the upper electrodes 711 and 721 of the semiconductor light emitting device chips 710 and 720 is larger than the planar size of the upper electrodes 711 and 721 It can be made smaller or equal. It is preferable that the light emitted from the vertical chips 710 and 720 is not absorbed by the common electrode layer 740, which is advantageous for improving the light quantity of the semiconductor light emitting device.
  • the planar size of the wire portion 742 of the common electrode layer 740 that electrically connects the semiconductor light emitting device chips 710 and 720 to the conductive member 730 is larger than that of the upper electrodes 711 and 721 Is smaller than or equal to the size of the planar area. 15, the semiconductor light emitting device 700 is substantially the same as the semiconductor light emitting device 300 described in FIG.
  • 16 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 800 includes a first semiconductor light emitting device chip 810, a second semiconductor light emitting device chip (not shown), a conductor 830, a common electrode layer 840, a first light transmitting layer 850, (860) and a second light-transmitting layer (870).
  • the second light-transmitting layer 870 is positioned between the first light-transmitting layer 850 and the non-light-emitting layer 860.
  • the first semiconductor light emitting device chip 810 and the second semiconductor light emitting device chip (not shown) encircle a part of the side surface and preferably surround the active layer 811.
  • the outermost side surface 841 of the second light-transmitting layer 840 is formed on the non-light-emitting layer 860 in order to prevent the light from being emitted to the side surface of the semiconductor light-emitting device 800 through the second light- .
  • the semiconductor light emitting element 800 is substantially the same as the semiconductor light emitting element 700 described in Fig.
  • FIG. 17 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG.
  • a substrate 900 is prepared (S10).
  • the substrate 900 can be a regular adhesive tape. For example, a blue tape.
  • a plurality of semiconductor light emitting device chips 910 and 920 and a conductor 930 are arranged on the substrate 900 (S20).
  • the upper electrodes 911 and 921 are arranged in contact with the substrate 900.
  • the upper electrodes 911 and 921 are preferably inserted into the substrate 900 such that the lower surfaces 912 and 922 of the plurality of semiconductor light emitting device chips 910 and 920 are in contact with the substrate 900.
  • the non-light-transmitting layer 940 is formed using a non-light-transmitting material such as a material used for a black matrix such as a liquid crystal display (LCD) (S30).
  • the non-light-emitting layer 940 is formed so that the lower electrodes 913 and 923 of the plurality of semiconductor light-emitting device chips 910 and 920 are exposed.
  • the substrate 900 is removed to expose the upper electrodes 911 and 921 (S40).
  • a common electrode layer 950 for electrically connecting the plurality of semiconductor light-emitting device chips 910 and 920 and the conductor 930 is formed (S50).
  • step S50 is represented by a plan view.
  • a plurality of semiconductor light emitting device chips 910 and 920, a conductor 930, and a common electrode layer 950 are covered with a first transparent layer 960 (S60). Sectional view taken along AA 'for clarity.
  • the arrangement of the plurality of semiconductor light-emitting device chips 910 and 920 and the conductors 930 can be variously arranged as shown in FIG. Since the first light-transmitting layer 960 covers the common electrode layer 950, the common electrode layer 950 is located inside the first light-transmitting layer 960.
  • the first light-transmitting layer 960 is made of a light-transmissive resin material. Thereafter, the semiconductor light emitting device is cut along the cut line 970 to obtain respective semiconductor light emitting devices (S70).
  • a plurality of semiconductor light emitting device chips 910 and 920 can be arranged so that the lower electrodes 913 and 923 of the plurality of semiconductor light emitting device chips 910 and 920 are in contact with the substrate 900 in step S20.
  • step S50 may be performed without step S40.
  • the semiconductor light emitting device manufactured by the method shown in FIG. 17 can be made thinner than the semiconductor light emitting device manufactured by the method shown in FIG. That is, in the case of the method described in FIG. 12, since the first light-transmitting layer has a constant thickness such as glass and a material that does not bend well in order to form the common electrode layer in the first light-transmitting layer, And becomes thicker than the semiconductor light emitting device manufactured by the disclosed method.
  • the common electrode layer is formed on the first light-transmitting layer and then electrically connected to the plurality of semiconductor light-emitting devices and the conductors, for the purpose of smooth electrical connection, as shown in FIGS. 8A and 8B, It is preferable to increase the planarity of the common electrode layer.
  • the manufacturing method described in Fig. 17 since the common electrode layer is formed directly on the plurality of semiconductor light emitting device chips and the conductor, even if the common electrode layer is formed in the form of a pattern having a small planar size as shown in Fig. 8 (c) It is easy to electrically connect a plurality of semiconductor light emitting device chips. Therefore, the manufacturing method described in Fig. 17 than the manufacturing method described in Fig. 12 can have a small consumption of material forming the common electrode layer.
  • the common electrode layer absorbs light emitted from the semiconductor light emitting device chip as described with reference to FIG. 15, the light emitting efficiency of the semiconductor light emitting device can be improved.
  • FIG. 18 is a view showing another example of the method of manufacturing the semiconductor light emitting device shown in FIG. 16. Referring to FIG. 18
  • Steps S10 and S20 are the same as those described in Fig. Thereafter, the second light-transmitting layer 980 is formed using a light-transmissive resin (S30-1).
  • the second light-transmitting layer 980 is preferably formed so as to cover the active layers 914 and 924 of the plurality of semiconductor light-emitting device chips 910 and 920.
  • a groove 981 is formed at the outermost edge of the second light-transmitting layer 980 (S30-2).
  • the groove 981 is filled and a non-light-emitting layer 940 is formed to surround the plurality of semiconductor light-emitting device chips 910 and 920 and the conductor 930 (S30-3).
  • the subsequent steps are the same as those described in Fig.
  • FIG. 19 is a view showing an example of a semiconductor light emitting device according to the present disclosure.
  • Fig. 19 (a) is a plan view
  • Fig. 19 (b) is a sectional view taken along line AA '.
  • the semiconductor light emitting device 200 includes a semiconductor light emitting device chip 210, a first light transmitting layer 220, a common electrode layer 230 located between the first light transmitting layer 220 and the semiconductor light emitting device chip 210, And a second light-transmitting layer 250 surrounding at least a part of a side surface of the semiconductor light-emitting device chip 210 and the conductor 240.
  • the semiconductor light emitting device chip 210 is preferably the vertical chip shown in FIG. 3, but does not exclude a lateral chip or a flip chip.
  • the first light-transmitting layer 220 is a layer made of a light-transmitting material.
  • the first light-transmitting layer 220 is preferably formed of a light-transmitting nonconductive material such as glass or sapphire.
  • the first light-transmitting layer 220 has a function of the common electrode layer 230, so that a separate common electrode layer 230 is not required.
  • the first light-transmitting layer 220 is preferably made of a rigid material that does not bend well, because the common electrode layer 230 is easily formed on one side of the first light-transmitting layer 220 by vapor deposition or printing.
  • the common electrode layer 230 is a conductive layer electrically connected to both the semiconductor light emitting device chip 210 and the conductor 240.
  • the common electrode layer 230 will be described again in Fig.
  • the conductor 240 electrically connects the electrode of the external substrate and the common electrode layer 230 when the semiconductor light emitting device 200 is electrically connected to an external substrate (e.g., a PCB, a submount, or the like).
  • the conductor 240 electrically connects the electrode of the external substrate and the common electrode layer 230 without emitting light, unlike the semiconductor light emitting device chip. Therefore, the semiconductor light emitting device 200 is electrically connected to the semiconductor light emitting device chip 210 It is possible to control so that the inherent color emitted is emitted.
  • the material of the conductor 240 is a conductive material and can be either metal or non-metal.
  • the conductor 240 may be formed of copper (Cu).
  • the conductor 250 is not only made of a conductive material, but may be a structure in which a hole passing through an insulating material is filled with a conductive material (e.g., copper).
  • the second light-transmissive layer 250 protects the semiconductor light-emitting device chip 210 and the conductor 240, and allows the light emitted from the semiconductor light-emitting device chip 210 to escape to the outside.
  • the second light-transmitting layer 250 may be made of a light-transmissive resin. For example, a silicone resin, an epoxy resin, or the like.
  • the upper electrodes 211 and 241 are formed on the semiconductor light emitting device chip 210 and the conductor 250 in order to improve the electrical connection function between the semiconductor light emitting device chip 210 and the conductor 240 and the common electrode layer 230.
  • the electrodes 231 corresponding to the upper electrodes 211 and 241 may be formed under the common electrode layer 230.
  • the lower electrodes 212 and 242 exposed from the second light transmitting layer 250 are electrically connected to the semiconductor light emitting device chip 210 and the conductor 240, respectively.
  • 20 is a view showing various embodiments of a common electrode layer according to the present disclosure.
  • the common electrode layer 230 may be formed on the entire surface of the first light-transmitting layer 220 as shown in FIG. 20 (a). Or may be formed on a part of the first light-transmitting layer 220 as shown in FIG. 20 (b). 20 (c), and each island may be formed in the form of a pattern electrically connected by the wire portion 232 of the common electrode layer 230.
  • the pattern may be a grid pattern.
  • the common electrode layer 230 is formed as shown in FIGS. 20 (b) and 20 (c)
  • the positions of the semiconductor light emitting device chip 210 and the conductors 240 should be positioned as indicated by dotted lines.
  • the common electrode layer 230 is formed as shown in FIG.
  • the semiconductor light emitting device chip 210 and the conductors 240 should be positioned within the range where the common electrode layer 230 is formed.
  • the common electrode layer 230 is widely formed in the first light-transmitting layer 220 as shown in FIGS. 20A and 20B, light emitted from the semiconductor light-emitting device chip 210 is incident on the first light-transmitting layer 220,
  • the common electrode layer 230 may be formed of a transparent material such as ITO (Indium Tin Oxide).
  • 21 is a view showing an example of the operation principle of the semiconductor light emitting device according to the present disclosure. Only a part of the semiconductor light emitting device is shown for convenience of explanation.
  • the conductor 240 does not emit light and electrically connects the common electrode layer 230 to the electrode of the external substrate 230, it does not affect the semiconductor light emitting device chip 210 when emitting the original color.
  • FIG. 22 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • the first light-transmitting layer 300 is prepared (S1). Thereafter, the common electrode layer 310 is formed on one surface of the first light-transmitting layer 300 (S2).
  • the common electrode layer 310 may be formed by applying ITO to the entire first surface of the first light-transmitting layer 300 or a part of the first surface of the first light-transmitting layer 300, and may be formed on one surface of the first light- A pattern may be formed.
  • As the pattern formation for example, a printing method using a waste fly, a metal deposition using a PR pattern, and an ITO deposition may be used.
  • the semiconductor light emitting device chip 320 and the conductor 330 are electrically connected to the common electrode layer 310 (S3).
  • the electrode 311 is formed on the common electrode layer 310 and then the upper electrodes 321 and 331 of the semiconductor light emitting device chip 320 and the conductor 330 are electrically connected to the electrodes 311 of the common electrode layer 310, Can be directly electrically connected using eutectic bonding or a conductive adhesive without using a conductive adhesive.
  • the semiconductor light emitting element chip and the conductor are arranged in a line, but this is for convenience of explanation.
  • a second light-transmitting layer 340 is formed to cover the semiconductor light-emitting device chip 320 and the conductor 330 (S4).
  • the second light transmitting layer 340 may be formed to cover the semiconductor light emitting device chip 320 and the conductor 330 so that the upper surface of the semiconductor light emitting device chip 320 and the conductor 330 may be exposed.
  • the semiconductor light emitting device chip 320 and the conductor 330 are removed so that the upper surface of the semiconductor light emitting device chip 320 and the conductor 330 are exposed so as to cover the upper surface of the semiconductor light emitting device chip 320,
  • the lower electrodes 322 and 332 are exposed from the second light-transmitting layer 340. Thereafter, the semiconductor light emitting device is obtained by cutting along the cutting line 350 (S5).
  • FIG. 23 is a view showing another example of the semiconductor light emitting device according to the present disclosure.
  • Fig. 23 (a) is a plan view
  • Fig. 23 (b) is a sectional view taken along line AA '.
  • the semiconductor light emitting device 400 includes a semiconductor light emitting device chip 410, a first light transmitting layer 420, a common electrode layer 430, a conductor 440, and a second light transmitting layer 450.
  • the semiconductor light emitting device chip 410 and the conductor 440 are electrically connected by the common electrode layer 430.
  • the first light-transmitting layer 420 covers the semiconductor light-emitting device chip 410, the conductor 440, the common electrode layer 430, and the second light-transmitting layer 450.
  • the common electrode layer 430 shown in FIG. 23 is formed inside the first transparent layer 420, unlike the common electrode layer 230 shown in FIG. 19 formed on one surface of the first transparent layer 220.
  • the common electrode layer 430 is formed in a pattern form as shown in Fig. 20 (c).
  • the second light-transmitting layer 450 surrounds at least a part of the side surface of the semiconductor light-emitting device chip 410 and the conductor 440.
  • the semiconductor light emitting device chip 410 is preferably a vertical chip.
  • the common electrode layer 440 is electrically connected to the upper electrode 411 of the semiconductor light emitting device chip 410.
  • the planar size of the electrode portion 431 of the common electrode layer 430 directly electrically connected to the upper electrode 411 of the semiconductor light emitting device chip 410 may be smaller than or equal to the size of the planar portion of the upper electrode 411 have.
  • the planar size of the wire portion 432 of the common electrode layer 430 for electrically connecting the semiconductor light emitting device chip 410 and the conductor 440 to the semiconductor light emitting element 410 is not limited to the planar size of the upper electrode 411 Smaller than or equal to the size.
  • the semiconductor light emitting device 400 is substantially the same as the semiconductor light emitting device 200 described in Fig.
  • FIG. 24 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 23.
  • FIG. 24 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 23.
  • the substrate 500 is prepared (S10).
  • the substrate 500 can be a regular adhesive tape. For example, a blue tape.
  • the semiconductor light emitting device chip 510 and the conductor 520 are arranged on the substrate 500 (S20).
  • the upper electrode 511 is arranged to be in contact with the substrate 500. It is preferable that the upper electrode 511 is inserted into the substrate 500 so that the lower surface 512 of the semiconductor light emitting device chip 510 is in contact with one surface of the substrate 500.
  • the second light-transmitting layer 530 is formed using a light-transmitting resin (S30).
  • the second light-transmitting layer 530 is formed so that the lower electrode 513 of the semiconductor light-emitting device chip 510 is exposed. Subsequently, the substrate 500 is removed to expose the upper electrode 513 (S40).
  • a common electrode layer 540 for electrically connecting the semiconductor light emitting device chip 510 and the conductive body 520 is formed on the semiconductor light emitting device chip 510, the conductive body 520, and the second light transmitting layer 530 S50).
  • the common electrode layer 540 may be formed using a conductive material by a method such as vapor deposition or printing.
  • the semiconductor light emitting device chip 510 is the vertical chip 510 having the upper electrode 511
  • the common electrode layer 540 may be formed to have a size smaller than or equal to the planar size of the upper electrode 511.
  • the semiconductor light emitting device chip 510 is the vertical chip 510 having the upper electrode 511
  • the wire portion 542 of the common electrode layer 540 which is electrically connected to the upper electrode 511 and the conductor 520
  • the common electrode layer 540 may be formed such that the planar size 541 of the upper electrode 511 is smaller than or equal to the planar size of the upper electrode 511.
  • the semiconductor light emitting device chip 510, the conductor 520, the common electrode layer 540, and the second light-transmitting layer 530 are covered with the first light-transmitting layer 550 (S60).
  • the first light-transmitting layer 550 is made of a light-transmissive resin material and may be made of the same material as the second light-transmitting layer 530.
  • the semiconductor light emitting device is cut along the cutting line 560 to obtain respective semiconductor light emitting devices (S70).
  • the semiconductor light emitting device chip 510 may be arranged such that the lower electrode 513 of the semiconductor light emitting device chip 510 contacts the substrate 500 in step S20. In this case, step S50 may be performed without step S40.
  • the semiconductor light emitting device manufactured by the method shown in FIG. 24 can be made thinner than the semiconductor light emitting device manufactured by the method described in FIG. That is, in the case of the method described in Fig. 22, since the first light-transmitting layer has a constant thickness such as glass and a material that does not bend well in order to form a common electrode layer in the first light-transmitting layer, And becomes thicker than the semiconductor light emitting device manufactured by the disclosed method. In addition, in the case of the method described in FIG. 22, since the common electrode layer is formed on the first light-transmitting layer and then electrically connected to the plurality of semiconductor light-emitting devices and the conductors, It is preferable to increase the planarity of the common electrode layer.
  • the manufacturing method described in Fig. 24 since the common electrode layer is formed directly on the plurality of semiconductor light-emitting device chips and the conductor, even if the common electrode layer is formed in the form of a pattern having a small planar size as shown in Fig. It is easy to electrically connect a plurality of semiconductor light emitting device chips. Therefore, the manufacturing method described in Fig. 24 than the manufacturing method described in Fig. 22 can have a small consumption of material forming the common electrode layer. Also, since the common electrode layer absorbs light emitted from the semiconductor light emitting device chip as described with reference to FIG. 23, the luminous efficiency of the semiconductor light emitting device can be improved.
  • 25 is a view for explaining an example of the semiconductor light emitting element 1 according to the present disclosure.
  • the semiconductor light emitting device 1 includes a semiconductor light emitting device chip 110, a sealing material 120, and a reflective wall 130.
  • the semiconductor light emitting device chip 110 includes a plurality of semiconductor layers including an active layer 111 that generates light by recombination of electrons and holes and an electrode 112 electrically connected to the plurality of semiconductor layers.
  • the semiconductor light emitting device chip 110 is preferably a flip chip in which the electrode 112 is positioned below the semiconductor light emitting device chip 110 and the electrode 112 is exposed in the lower direction of the sealing material 120 have.
  • the semiconductor light emitting device chip 110 is limited to a flip chip in the present disclosure, it does not exclude a lateral chip or a vertical chip.
  • the active layer 111 is exaggerated for clarity, and the actual active layer is formed in the vicinity of the electrode 112 with a thickness of a few um and thin.
  • the reflective wall 130 is formed on a side surface of the semiconductor light emitting device chip 110 so as to surround the semiconductor light emitting device chip 110.
  • the reflective wall 130 may be formed of a colored reflective material capable of reflecting light emitted from the semiconductor light emitting device chip 110 to the encapsulant 120.
  • a white silicone resin for example, a white silicone resin.
  • the reflective wall 130 may be opaque and reflect light toward the encapsulant 120.
  • the reflective wall 130 includes an inner surface 133 connecting the upper surface 131 and the lower surface 132 of the reflective wall 130 and contacting the encapsulant 120.
  • the inner side surface 133 has a flat surface 1330 parallel to the upper surface 131 and the lower surface 132 of the reflecting wall 130 and a flat surface 1330 parallel to the flat surface 1330 of the reflecting wall 130 and the reflecting wall 130.
  • the portion formed by the flat surface 1330 and the inclined surface 1332 is referred to as a flat portion 134 of the reflecting wall 130.
  • the flat portion 134 has the same height as the height of the semiconductor light emitting device chip 110.
  • the inclined surface 1332 is formed as a convex curve in the lateral direction of the semiconductor light emitting device chip 110, so that the distribution of the light emitted from the semiconductor light emitting device chip 110 can be helped to a desired shape.
  • the semiconductor light emitting device chip 110 is shown in the present disclosure as a convex curve in the lateral direction, the semiconductor light emitting device chip 110 may be formed in a straight line.
  • the encapsulant 120 is formed to surround the side surface and the upper surface of the semiconductor light emitting device chip 110.
  • the encapsulant 120 is formed in the cavity formed by the reflective wall 130.
  • the encapsulant 120 may be formed of one of a transmissive material and a transmissive material including a wavelength converting material (not shown).
  • the light transmitting material may be at least one of an epoxy resin and a silicone resin.
  • the wavelength conversion material may be any material as long as it converts light generated from the active layer 111 of the semiconductor light emitting device chip 110 into light of a different wavelength (for example, pigment, dye, etc.) : YAG, (Sr, Ba, Ca) 2SiO4: Eu, etc.) is preferably used.
  • the wavelength conversion material can be determined according to the color of light emitted from the semiconductor light emitting element 1 and is well known to those skilled in the art.
  • the encapsulant 120 uniformly converts light emitted from the side surface and the top surface of the semiconductor light emitting device chip 110 to uniformly emit light.
  • the encapsulant 120 may include a first encapsulant 121 located on the semiconductor light emitting device chip 110 and a second encapsulant 121 located below the first encapsulant 121 and on the side of the semiconductor light emitting device chip 110.
  • an encapsulant 122 it is preferable that the first encapsulant 121 and the second encapsulant 122 are formed of at least one of the same material, for example, a translucent material and a translucent material including a wavelength conversion material.
  • the present invention is not limited to this and may be made of different materials.
  • the second encapsulant 122 is positioned between the side surface of the semiconductor light emitting device chip 110 and the inclined surface 1332 of the reflective wall 130.
  • 26 is a view showing another example of the semiconductor light emitting element 2 according to the present disclosure.
  • the semiconductor light emitting device 2 includes a contact portion 140 where a side surface of the semiconductor light emitting device chip 110 and an inclined surface 1332 of the inner side surface 133 of the reflecting wall 130 are in contact with each other. Except for the contact portion 140, has the same characteristics as the semiconductor light emitting element 1 described in Fig.
  • the contact portion 140 is in contact with a portion of the side surface of the semiconductor light emitting device chip 110 and the inclined surface 1332 so that the second encapsulant 122 are not located.
  • the second encapsulant 122 is not disposed between a part of the side surface of the semiconductor light emitting device chip 110 and the inclined surface 1332, light emitted from the side surface of the semiconductor light emitting device chip 110 is transmitted to the semiconductor light emitting device chip 110 So that light can be prevented from being lost.
  • Fig. 27 is a view for explaining the effect obtained when the reflection wall is formed as a sloped surface formed convexly in the lateral direction of the semiconductor light emitting device chip in the semiconductor light emitting device shown in Figs. 25 and 26;
  • the inner side surface 133a of the reflective wall 130a in the semiconductor light emitting device 1a shown in Figure 27 (a) is formed as a convex slope toward the side of the semiconductor light emitting device chip 120a, So that the light extraction efficiency can be improved. Also, the degree of convexity of the inner side surface 133a of the reflective wall 130a can be adjusted to control the directional angle of the light reflected by the reflective wall 130a.
  • the semiconductor light emitting device 1b shown in FIG. 27 (b) is formed by the reflection wall 130b formed by the light emitted from the side surface of the semiconductor light emitting device chip 120b in contact with the side surface of the semiconductor light emitting device chip 120b The light is re-incident on the semiconductor light emitting device chip 120b, and light loss may occur.
  • the semiconductor light emitting device 1c shown in FIG. 27 (c) is formed by a reflection wall 130c formed by the light emitted from the side surface of the semiconductor light emitting device chip 120c separated from the side surface of the semiconductor light emitting device chip 120c
  • the light may be re-incident on the semiconductor light-emitting device chip 120c or may go to the lower side of the semiconductor light-emitting device chip 120c to cause light loss.
  • 28 and 29 are views for explaining an example of a method for manufacturing a semiconductor light emitting device according to the present disclosure.
  • the second encapsulant 222 is coated on the first encapsulant 221. Then, The thickness of the second encapsulant 222 applied on the first encapsulant 221 is smaller than the thickness of the first encapsulant 221. [ In the present disclosure, the thickness of the second encapsulant 222 is greater than 0 and less than 10 ⁇ ⁇ , but the present invention is not limited thereto.
  • the slope of the reflective wall 230 which will be described later, can be adjusted according to the application amount of the second encapsulant 221. For example, when the second encapsulant 222 is applied to a thickness of 2 ⁇ m, the inclination of the inclined surface 2332 of the reflective wall 230 is increased.
  • the inclination of the inclined surface 2332 of the reflecting wall 230 may be smaller than the inclination of the inclined surface 2332 of the reflective wall 230. Accordingly, the directivity angle of the light reflected by the reflective wall 230 can be adjusted according to the inclination of the inclined plane 2332 of the reflective wall 230. Particularly, in order for the inclined surface 2332 to have a curved shape, it is preferable that the second encapsulant 222 is applied at 10um or less.
  • a flip chip is suitable as the semiconductor light emitting device chip 210, but it does not exclude a lateral chip or a vertical chip.
  • the base 20 on which the semiconductor light emitting device chips 210 are arranged is fixed to the upper portion of the chamber 10 in order to dispose the semiconductor light emitting device chip 210 on the second encapsulant 222. And an air discharge port 12 for discharging air generated inside when the lowering control part 11 and the semiconductor light emitting device chip 210 are lowered.
  • the first encapsulant 221 is provided at the lower part of the chamber 10, And a heating unit (13) for heating the second encapsulant (222).
  • the semiconductor light emitting device chip 210 is placed on the base 20.
  • the semiconductor light emitting device chip 210 may be disposed in a single or plural number so that the electrodes 212 of the semiconductor light emitting device chip 210 face the base 20.
  • the base 20 may be a flexible film, tape, metal plate, or non-metal plate.
  • the film or the tape has adhesiveness or adhesiveness and has heat resistance.
  • a heat-resistant tape, a blue tape, or the like can be used, and various colors and light reflectance can be selected.
  • Al, Cu, Ag, Cu-Al alloy, Cu-Ag alloy, Cu-Au alloy, SUS (stainless steel) and the like can be used as the metal plate, Of course, it can be used.
  • Plastics can be used as non-metallic plates, and various colors and light reflectance can be selected.
  • the base 20 on which the semiconductor light emitting device chips 210 are arranged can be advantageous even if it is not a semiconductor substrate or another expensive substrate.
  • an adhesive layer may be provided between the base 20 and the semiconductor light emitting device chip 210 to fix the semiconductor light emitting device chip 210 on the base 20 without moving.
  • the semiconductor light emitting device chip 210 arranged on the base 20 and the second encapsulant 222 formed on the first encapsulant 221 are transported (not shown) In the chamber 10.
  • the base 20 is fixed to the control unit 11 so that the semiconductor light emitting device chip 210 is positioned on the upper portion of the chamber 10.
  • the first encapsulant 221 and the second encapsulant 222 are disposed on the heating unit 13, Is located on the support plate (14) positioned above. Since the electrode 212 of the semiconductor light emitting device chip 210 is positioned to face the base 20, the semiconductor light emitting device chip 210 is disposed such that the upper surface of the semiconductor light emitting device chip 210 is exposed.
  • the semiconductor light emitting device chip 210 is lowered to the lower portion of the chamber 10.
  • air is discharged through the air discharging part 12 and only the base 20 corresponding to the descending part 111 is lowered by the elastic force of the base 20.
  • the base 20 is preferably made of a flexible material having an elastic force in order to lower only the base 20 corresponding to the descending portion 111 while the base 20 is fixed to the control portion 11.
  • the air is discharged through the air discharge unit 12 so that a portion of the base 20 which does not correspond to the descending portion 111 is bent to the upper portion of the chamber 10, ) Makes it easier to descend. Only the base 20 corresponding to the descending portion 111 is lowered so that the upper surface of the light emitting device chip 210 comes into contact with the second encapsulant 222.
  • the second encapsulant 222 is formed so as to surround the side surface of the semiconductor light emitting device chip 210.
  • the material for forming the second encapsulant 222 in the form of a liquid by the heating unit 13 rides up on the side surface of the semiconductor light emitting device chip 210 but the upper surface of the semiconductor light emitting device chip 210 Is not formed.
  • the second encapsulant 222 formed to surround the side surface of the semiconductor light emitting device chip 210 is formed as a convex curve in the side direction of the semiconductor light emitting device chip 222.
  • the heating unit 13 preferably maintains a temperature of 70 ⁇ to 90 ⁇ for heating only the second encapsulant 222, but is not limited thereto.
  • the semiconductor light emitting device chip 210 integrally joined with the first encapsulant 221 and the second encapsulant 222 is taken out of the chamber 10.
  • the first encapsulant 221, the second encapsulant 222, and the semiconductor light-emitting device chip 210 integrally bonded to each other are separately separated.
  • first encapsulation material 221 is formed between the semiconductor light emitting device chip 210 and the semiconductor light emitting device chip 210.
  • the flat portion of the first encapsulant 221 is cut so that a flat surface can be formed on the reflective wall 230.
  • the fixing plate 40, The reflective wall 230 can be formed between the first encapsulant 221 and the first encapsulant 221 by arranging the first encapsulant 221 and the second encapsulant 221 such that a predetermined gap 41 is formed.
  • a reflective material is applied to cover the first encapsulant 221 and the second encapsulant 222 to form a reflective wall 230.
  • the reflective wall 230 is preferably made of a colored reflective material. For example, a white silicone resin.
  • the semiconductor light emitting device chip 210 is cut along the cut line 31 formed in the reflecting wall 230 between the semiconductor light emitting device chip 210, Thereby forming the light emitting element 1.
  • the reflective wall 230 reflects light emitted from the side surface of the semiconductor light emitting device chip 210 to the upper side of the semiconductor light emitting device.
  • FIG. 30 is a view for explaining another example of a method of manufacturing the semiconductor light emitting device according to the present disclosure.
  • the reflective wall 330 contacts the portion 340 of the side surface of the semiconductor light emitting device chip 310 to form the first encapsulant 321 and the second encapsulant 322). Therefore, the second encapsulant 322 is not disposed between the portion 340 of the side surface of the semiconductor light emitting device chip 310 and the reflective wall 330. That is, the semiconductor light emitting device includes a contact portion 340 where a portion 340 of the side surface of the semiconductor light emitting device chip 310 and a portion of the reflecting wall 330 are in contact with each other.
  • 31 is a view showing an example of a semiconductor light emitting device chip according to the present disclosure.
  • Fig. 31 (a) is a perspective view
  • Fig. 31 (b) is a sectional view taken along AA '.
  • the semiconductor light emitting device 100 includes a growth substrate 110, a plurality of semiconductor layers 120, 130, 140, and 150, and ohmic electrodes 160 and 170.
  • the growth substrate 110 is mainly made of sapphire, SiC, Si, GaN or the like, and the growth substrate 110 can be finally removed.
  • the plurality of semiconductor layers 120, 130, 140, and 150 may include a buffer layer 120 growing in the growth substrate 110, a first semiconductor layer 130 having a first conductivity (e.g., n-type semiconductor layer) (For example, a p-type semiconductor layer) having a second conductivity different from that of the first semiconductor layer 120 and a second semiconductor layer 150 having a second conductivity different from that of the first semiconductor layer 120 And an active layer 140 that generates light.
  • the buffer layer 120 may be omitted and may include additional layers as required, although not shown.
  • the plurality of semiconductor layers 120, 130, 140, and 150 may emit ultraviolet light based on an aluminum gallium nitride (AlGaN) material. In particular, ultraviolet rays having a short wavelength of 300 nm or less can be emitted.
  • AlGaN aluminum gallium nitride
  • the ohmic electrode includes a first ohmic electrode 160 and a second ohmic electrode 170.
  • the first ohmic electrode 160 may be formed of a combination of Cr, Ti, Al, Ag, Ni, Pt, W, and Au.
  • the first ohmic electrode 161 may be formed by sequentially stacking an ohmic contact layer (e.g., Cr, Ti, etc.) / a reflective metal layer (e.g., Al or Ag) / a first barrier layer Ti, W, Pt, TiW, etc.) / oxidation layer (e.g. Au, Pt) / second barrier layer (e.g. Cr, Ti, Ni, Pt, Al, etc.).
  • the ohmic contact layer is made of a metal having a small work function and is in ohmic contact with the first semiconductor layer 130.
  • the reflective metal layer reflects light to reduce absorption loss.
  • the first barrier layer prevents diffusion between the reflective metal layer and the anti-oxidation layer.
  • the oxidation preventing layer can prevent oxidation of the first barrier layer and the like.
  • a pad electrode can be formed on the first ohmic electrode 160, and good electrical contact with the pad electrode can be achieved in this case .
  • the ohmic contact layer may have a thickness of about 5 to 500 Angstroms
  • the reflective metal layer may have a thickness of about 500 Angstroms to 10,000 Angstroms
  • the first barrier layer may have a thickness of about 100 Angstroms to 5000 Angstroms
  • the second barrier layer may have a thickness of about 10 to 1000 angstroms.
  • the first ohmic electrode 161 having such a multi-layer structure may be omitted, if necessary, or a new layer may be added.
  • the second ohmic electrode 170 may be formed of a combination of Cr, Ti, Al, Ag, Ni, Pt, W, and Au.
  • the second ohmic electrode 170 does not need to have the same structure as the first ohmic electrode 160 but may have a similar multilayer structure.
  • the second ohmic electrode 170 may include a sequentially stacked contact layer / reflective metal layer / first barrier layer / oxidation ring layer / second barrier layer.
  • a pad electrode may be formed on the second ohmic electrode 170 as needed.
  • a light-transmitting conductive film may be formed between the second ohmic electrode 170 and the second semiconductor layer 150.
  • the second semiconductor layer 150 is made of p-type aluminum gallium nitride (AlGaN)
  • AlGaN p-type aluminum gallium nitride
  • the transmissive conductive film is formed too thin, the current extraction is disadvantageous to current diffusion, and the driving voltage is increased. If the transmissive conductive film is formed too thick, light extraction efficiency may be reduced due to light absorption.
  • the light transmissive conductive film may be formed of a light transmissive conductive film using ITO, ZnO, or Ni and Au, or alternatively may be formed of a reflective conductive film using Ag.
  • 32 is a view showing an example of a method of manufacturing a semiconductor light emitting device chip according to the present disclosure.
  • a first semiconductor layer 130, an active layer 140, and a second semiconductor layer 150 are sequentially formed on a growth substrate 110
  • the second semiconductor layer 150 and the active layer 140 are mesa-etched to expose the first semiconductor layer 130.
  • a dry etching method for example, ICP (Inductively Coupled Plasma), may be used as a method of removing a plurality of semiconductor layers. Processes for etching portions of the semiconductor layers 130, 140 and 150 are well known to those skilled in the art as known techniques.
  • a protective layer 200 is formed on the exposed first semiconductor layer 130 and the exposed second semiconductor layer 150.
  • the protective layer 200 is preferably formed in a single layer structure, but is not limited thereto and may be formed in a multi-layer structure.
  • the protective layer 200 may be formed of an insulating material such as SiO 2, TiO 2, SiNx.
  • the thickness of the protective layer 200 is 10 ⁇ ⁇ or less.
  • the protective layer 200 is preferably formed after etching as shown in FIG. 32 (a). If the protective layer is formed before etching, the etched surface is not very good during the subsequent etching process.
  • the protective layer 200 may include a plurality of semiconductor layers 130, 140, and 150 using PECVD (Plasma Enhanced Chemical Vapor Deposition), LPCVD (Low Pressure Chemical Vapor Deposition), sputtering, E-beam evaporation, As shown in Fig.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • LPCVD Low Pressure Chemical Vapor Deposition
  • sputtering E-beam evaporation
  • the first ohmic electrode 160 is formed by a method such as a sputtering method, an electron beam evaporation method, a thermal evaporation method, or the like.
  • the plurality of semiconductor layers 130, 140, and 150 and the first ohmic electrode 160 are heat-treated at a high temperature.
  • the heat treatment process of the plurality of semiconductor layers 130, 140, and 150 and the first ohmic electrode 160 may be performed simultaneously with the formation of the first ohmic electrode 160. Accordingly, the contact resistance between the first ohmic electrode 160 and the first semiconductor layer 130 is reduced, thereby lowering the operating voltage of the semiconductor light emitting device chip 100.
  • the heat treatment process is performed for 30 seconds to 3 minutes in a nitrogen atmosphere at 900 ⁇ to 1000 ⁇ .
  • the first semiconductor layer is made of n-type aluminum gallium nitride (AlGaN)
  • AlGaN n-type aluminum gallium nitride
  • heat treatment at an ultra-high temperature of 900 ° C or more is required for inter diffusion of metals for increasing n-type electron concentration to be. Even if the second semiconductor layer 150 is subjected to a heat treatment process at a high temperature of 900 ° C or higher, the heat is not transferred by the protective layer 200 and the holes are not destroyed.
  • a second ohmic electrode 170 is formed on the second semiconductor layer 150.
  • the second ohmic electrode 170 may be formed by a method such as a sputtering method, an electron beam evaporation method, a thermal evaporation method, or the like, or may be formed by the same or different method as the first ohmic electrode 160 have.
  • a necessary layer such as a light-transmitting conductive film can be added before forming the second ohmic electrode 170.
  • the second semiconductor layer 150 is made of p-type aluminum gallium nitride (AlGaN)
  • AlGaN p-type aluminum gallium nitride
  • the protective layer 200 may be formed directly on the first semiconductor layer 130 and the second semiconductor layer 150, but the protective layer 200 and the first semiconductor layer 130 And the second semiconductor layer 150 may be formed.
  • FIG 33 is a view showing another example of a method of manufacturing a semiconductor light emitting device chip according to the present disclosure.
  • a first semiconductor layer 130, an active layer 140, and a second semiconductor layer 150 are sequentially formed on a growth substrate 110 as shown in FIG. 33 (a). Then, a protective layer 200 is formed on the second semiconductor layer 150 as shown in FIG. 33 (b). Then, the first semiconductor layer 130 is etched so as to be exposed as shown in FIG. 33 (c). The subsequent process is substantially the same as the process after (b) of FIG.
  • 34 to 35 are views showing the advantages of the semiconductor light emitting device chip manufactured by the manufacturing method according to the present disclosure.
  • FIGS. 34 to 35 are views showing the characteristics of the operating voltage of the semiconductor light emitting device chip.
  • a graph 300 showing the operating voltage of the semiconductor light emitting device chip fabricated with the ohmic electrode using the protective layer according to the present disclosure shows the operating voltage of the semiconductor light emitting device chip fabricated by the conventional method. As the resistance decreases at the same voltage compared to the graph 310, a higher magnitude current flows.
  • 35 shows a characteristic of an operating voltage measured when a current of 20 mA is applied to a wafer manufactured using a protective layer
  • 35 (a) shows a semiconductor light emitting device chip 320 in which more than 70% of the semiconductor light emitting device chips on a wafer have an operating voltage of about 6 V, while FIG. 35 (b) And more than 60% of the device chips have an operating voltage of about 7V (330).
  • the method of manufacturing a semiconductor light emitting device chip according to the present disclosure can be applied to all semiconductor light emitting device chips including ohmic electrodes.
  • the manufacturing method of the semiconductor light emitting device chip according to the present disclosure can be applied.
  • the manufacturing method described in the present disclosure can be applied when forming ohmic electrodes in all semiconductor light-emitting device chips that emit ultraviolet light.
  • the order of the method of manufacturing the semiconductor light-emitting device chip according to the present disclosure can be included in the scope of the present disclosure to the extent that those skilled in the art can easily change it.
  • a semiconductor light emitting device electrically connected to the outside comprising: a first semiconductor light emitting device chip; A second semiconductor light emitting element chip; Conductor; A first light-transmitting layer; A common electrode layer positioned between the first light-transmitting layer and the first semiconductor light-emitting element chip, the second semiconductor light-emitting element chip and the conductor; And a non-light-emitting layer for shielding light emitted to the side of the semiconductor light-emitting device, wherein the conductor electrically connects the outside and the common electrode layer.
  • the semiconductor light emitting element and the second semiconductor light emitting element chip emit different colors.
  • a second light-transmitting layer positioned between the common electrode layer and the non-light-emitting layer.
  • a semiconductor light emitting device comprising a first semiconductor light emitting device chip and a third semiconductor light emitting device chip which emits different colors from the second semiconductor light emitting device chip.
  • the non-light-emitting layer is black.
  • the light-emitting layer is made of a material that reflects light.
  • Each of the first semiconductor light emitting device chip and the second semiconductor light emitting device chip has an upper electrode electrically connected to the common electrode layer on the upper portion.
  • a semiconductor light emitting device in which an electrode electrically connected to a first semiconductor light emitting device chip and an upper electrode of a second semiconductor light emitting device chip is formed under the common electrode layer.
  • a semiconductor light emitting device in which a first semiconductor light emitting device chip, a second semiconductor light emitting device chip, and a lower electrode exposed from a non-light emitting layer are formed under the conductor.
  • a method for manufacturing a semiconductor light emitting device comprising: preparing a first light-transmitting layer; Forming a common electrode layer on one surface of the first light-transmitting layer; Electrically connecting the common electrode layer to the plurality of semiconductor light emitting device chips and the conductor; Forming a groove through the common electrode layer and the first light-transmitting layer; And forming a groove, a plurality of semiconductor light emitting device chips, and a non-light-transmitting layer covering the conductor.
  • a common electrode layer is formed on one entire surface of the first light-transmitting layer.
  • a common electrode layer is formed in a pattern on one surface of the first light-transmitting layer.
  • an electrode is formed on the common electrode layer formed on one surface of the first light-transmitting layer.
  • the step of electrically connecting the common electrode layer to the plurality of semiconductor light-emitting device chips and the conductors may include a first semiconductor light-emitting device chip that emits different colors, a second semiconductor light-emitting device chip, (3) A method for manufacturing a semiconductor light emitting device, the method comprising the steps of:
  • the second light-transmitting layer is formed up to the active layer of the plurality of semiconductor light-emitting device chips.
  • an ultra-small semiconductor light emitting device constituting a pixel in an LED display.
  • an LED display can be easily manufactured.
  • the semiconductor light emitting device comprising: a first semiconductor light emitting device chip; A second semiconductor light emitting element chip; Conductor; A non-light-emitting layer surrounding at least a part of a side surface of the first semiconductor light-emitting element chip, the second semiconductor light-emitting element chip and the conductor; A common electrode layer formed on the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, and the conductor; And a first transparent layer covering the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, the conductor, and the common electrode layer, wherein the common electrode layer includes a first transparent layer formed inside the first transparent layer, And electrically connecting the outside and the common electrode layer.
  • a second light-transmitting layer positioned between the common electrode layer and the non-light-transmitting layer.
  • a semiconductor light emitting device comprising a first semiconductor light emitting device chip and a third semiconductor light emitting device chip emitting a color different from that of the second semiconductor light emitting device chip.
  • a semiconductor light emitting device having a planar size of a wire portion of a common electrode layer that electrically connects an upper electrode of a vertical chip and a conductor to a planar size of an upper electrode of a vertical chip.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a substrate; Arranging a plurality of semiconductor light emitting device chips and conductors on a substrate; Forming a plurality of semiconductor light-emitting device chips and a non-light-transmitting layer surrounding at least a portion of the side surface of the conductor; Forming a common electrode layer for electrically connecting the plurality of semiconductor light emitting device chips and the conductor; And forming a first light-transmitting layer including a common electrode layer inside the first light-transmitting layer, the method comprising: forming a first light-transmitting layer covering a plurality of semiconductor light-emitting device chips, Lt; / RTI >
  • a common electrode layer is formed in a pattern shape.
  • (28) arranging a plurality of semiconductor light emitting device chips and conductors on a substrate, wherein the plurality of semiconductor light emitting device chips are vertical chips, and the plurality of semiconductor light emitting device chips and the conductors Is formed on the semiconductor layer.
  • a method of manufacturing a semiconductor light emitting device comprising the steps of: forming a non-light-emitting layer for surrounding at least a part of side surfaces of a plurality of semiconductor light emitting device chips and conductors; and forming a common electrode layer for electrically connecting the plurality of semiconductor light emitting device chips and the conductors
  • Forming a common electrode layer electrically connecting the plurality of semiconductor light emitting device chips and the conductive body includes removing a substrate to form a common electrode layer for electrically connecting the upper electrode of the exposed vertical chip and the conductive body, Is formed.
  • an ultra-small semiconductor light emitting device constituting a pixel in an LED display.
  • an LED display can be easily manufactured.
  • a semiconductor light emitting device comprising: a first light-transmitting layer; A common electrode layer formed on one surface of the first light-transmitting layer; A semiconductor light emitting device chip electrically connected to the common electrode layer; A conductor electrically connected to the common electrode layer; And a second light-transmitting layer surrounding at least a part of a side surface of the semiconductor light-emitting element chip and the conductor.
  • the semiconductor light emitting device chip is a vertical chip including an upper electrode and a lower electrode.
  • a semiconductor light emitting device in which a vertical chip emits red light.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a first light-transmitting layer; Forming a common electrode layer on one surface of the first light-transmitting layer; Electrically connecting the common electrode layer to the semiconductor light emitting device chip and the conductor; And forming a second light-transmitting layer covering the semiconductor light-emitting device chip and the conductor.
  • a common electrode layer is formed on one entire surface of the first light-transmitting layer.
  • a common electrode layer is formed in a pattern on one surface of the first light-transmitting layer.
  • the semiconductor light emitting device chip is a vertical chip including an upper electrode and a lower electrode
  • the conductor includes an upper electrode and a lower electrode
  • the upper electrode of the chip and the upper electrode of the conductor are electrically connected directly to the common electrode layer.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip; Conductor; A second light-transmitting layer surrounding at least a part of a side surface of the semiconductor light-emitting device chip and the conductor; A common electrode layer formed on the semiconductor light-emitting device chip, the conductor and the second light-transmitting layer; And a first light-transmitting layer covering the semiconductor light-emitting device chip, the conductor, the second light-transmitting layer, and the common electrode layer, wherein the common light-emitting layer includes a first light-transmitting layer having a common electrode layer formed inside the first light-transmitting layer.
  • the semiconductor light emitting device chip is a vertical chip including an upper electrode and a lower electrode.
  • a semiconductor light emitting device comprising a common electrode layer including an electrode portion and a wire portion, wherein a planar size of an electrode portion of a common electrode layer electrically connected to an upper electrode of a vertical chip is smaller than a planar size of an upper electrode of the vertical chip.
  • a semiconductor light emitting device having a planar size of a wire portion of a common electrode layer for electrically connecting an upper electrode of a vertical chip and a conductor to a planar size of an upper electrode of a vertical chip.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a substrate; Arranging a semiconductor light emitting device chip and a conductor on a substrate; Forming a second light-transmitting layer surrounding at least a part of the side surface of the semiconductor light-emitting device chip and the conductor; Forming a common electrode layer electrically connecting the semiconductor light emitting device chip and the conductor on the semiconductor light emitting device chip, the conductor, and the second transparent layer; And forming a first light-transmitting layer in which a common electrode layer is formed inside the first light-transmitting layer, the method comprising: forming a first light-transmitting layer covering the semiconductor light-emitting device chip, the conductor and the common electrode layer; Way.
  • a method of manufacturing a semiconductor light emitting device comprising the steps of: forming a second light-transmitting layer surrounding at least a part of side surfaces of a semiconductor light emitting device chip and a conductor; and electrically connecting the semiconductor light emitting device chip and the conductor Forming a common electrode layer electrically connecting the semiconductor light emitting device chip and the conductor on the semiconductor light emitting device chip, the conductor, and the second translucent layer; Wherein the substrate is removed to form a common electrode layer for electrically connecting the upper electrode of the exposed vertical chip and the conductor.
  • the semiconductor light emitting device chip is a vertical chip including the upper electrode, wherein the common electrode layer is formed such that the planar size of the common electrode layer electrically connected to the electrode is smaller than the planar size of the upper electrode.
  • a CSP semiconductor light emitting device having a flip chip structure can be obtained by using a vertical chip.
  • a method of manufacturing a semiconductor light emitting device comprising: coating a second encapsulant on a first encapsulant; Disposing a semiconductor light emitting device chip having an electrode on a second encapsulant using light and holes formed on the second encapsulant; and disposing the semiconductor light emitting device chip so that the electrode of the semiconductor light emitting device chip is exposed.
  • the second encapsulant surrounding at least a portion of a side surface of the semiconductor light emitting device chip; Separately cutting and arranging the integrally bonded first encapsulant, the second encapsulant, and the semiconductor light emitting element chip; And forming a reflective wall by applying a reflective material so as to cover the first encapsulant and the second encapsulant, wherein the reflective wall includes a flat portion.
  • the reflecting wall connects the upper surface and the lower surface of the reflecting wall and includes an inner surface in contact with the first sealing material and the second sealing material.
  • the inner surface includes a flat surface parallel to the upper surface and the lower surface of the reflecting wall And connecting the flat surface of the reflective wall to the lower surface of the reflective wall, and the inclined surface inclined in the downward direction from the flat surface.
  • the inclined surface is formed with a convex curve toward the semiconductor light emitting device chip.
  • the step of separately cutting and arranging the first encapsulant, the second encapsulant, and the semiconductor light emitting device chip integrally bonded together is cut so as to include the flat portion of the first encapsulant.
  • the step of individually cutting and arranging the first encapsulant, the second encapsulant, and the semiconductor light emitting device chip integrally bonded to the first encapsulant (55) is arranged so as to form a uniform gap between the first encapsulants.
  • thermosetting In the step of applying the second sealing material on the first sealing material, the second sealing material in a state before curing is coated on the first sealing material in a state in which the curing is completed, And after the step of surrounding at least a part of the side surface of the chip, the thermosetting is performed.
  • the second encapsulant surrounds at least a part of the side surface of the semiconductor light emitting device chip, wherein the second encapsulant is raised along the side surface of the semiconductor light emitting device chip by surface tension.
  • the semiconductor light emitting device chip corresponding to the falling portion is lowered by the elastic force of the base, so that the upper surface of the semiconductor light emitting device chip contacts the second sealing material
  • the semiconductor light emitting device chip is placed on the second encapsulant so that the semiconductor light emitting device chip contacts the semiconductor encapsulant.
  • the light emitted from the semiconductor light emitting device chip is reflected to the top of the semiconductor light emitting device by providing a curved reflective wall formed on the side surface of the semiconductor light emitting device chip It is possible to obtain a semiconductor light emitting device having high efficiency of light extracted on the upper surface. Accordingly, the semiconductor light emitting device can emit light on one side, thereby improving the light extraction efficiency of the semiconductor light emitting device.
  • the reflective wall is formed in contact with a part of the side surface of the semiconductor light emitting device chip, light emitted from the semiconductor light emitting device chip can be prevented from leaking toward the electrode of the semiconductor light emitting device chip, thereby preventing light loss.
  • a method of manufacturing a semiconductor light emitting device chip comprising the steps of: forming a first semiconductor layer having a first conductivity on a growth substrate, a second semiconductor layer having a second conductivity different from the first conductivity, Forming a plurality of semiconductor layers including an active layer which is interposed between the first electrode and the second electrode and recombines electrons and holes to generate light; Forming a protective layer covering the second semiconductor layer; Forming a first ohmic electrode electrically connected to the first semiconductor layer and performing a heat treatment at a first heat treatment temperature; Removing the protective layer; And forming a second ohmic electrode electrically connected to the second semiconductor layer and performing heat treatment at a second heat treatment temperature.
  • (62) A method of manufacturing a semiconductor light-emitting device chip, wherein a plurality of semiconductor layers are formed of an AlGaN material.
  • the protective layer may be SiO 2 , TiO 2 And SiNx. ≪ / RTI >
  • the forming includes forming a protective layer covering the second semiconductor layer and the exposed first semiconductor layer, forming a protective layer covering the second semiconductor layer, and forming a first ohmic electrode electrically connected to the first semiconductor layer And exposing a part of the first semiconductor layer by etching a part of the protective layer between the step of forming and the heat treatment at the first heat treatment temperature.
  • (70) A method of manufacturing a semiconductor light emitting device chip, wherein a portion of the first semiconductor layer is exposed by etching a part of the protective layer, the protective layer covering a side face of the second semiconductor layer and the active layer facing the first semiconductor layer .
  • the semiconductor light emitting device chip including a plurality of semiconductor layers made of an AlGaN material, when forming an ohmic electrode for lowering the operating voltage of the semiconductor light emitting device chip, It is possible to prevent the semiconductor layer from being damaged by the high temperature.

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Abstract

La présente invention concerne une diode électroluminescente à semi-conducteurs qui est électriquement connectée à l'extérieur, la diode électroluminescente à semi-conducteurs comprenant : une première puce de diode électroluminescente à semi-conducteurs ; une seconde puce de diode électroluminescente à semi-conducteurs ; un conducteur ; une première couche de transmission de lumière ; une couche d'électrode commune disposée entre la première couche de transmission de lumière et la première puce de diode électroluminescente à semi-conducteurs, la seconde puce de diode électroluminescente à semi-conducteurs et le conducteur ; et une couche sans transmission de lumière qui empêche la lumière de s'échapper du côté de la diode électroluminescente à semi-conducteurs, le conducteur connectant électriquement la couche d'électrode commune à l'extérieur.
PCT/KR2019/001089 2018-01-29 2019-01-25 Diode électroluminescente à semi-conducteurs et son procédé de fabrication Ceased WO2019147063A1 (fr)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
KR1020180010470A KR102100752B1 (ko) 2018-01-29 2018-01-29 반도체 발광소자 및 이의 제조방법
KR10-2018-0010470 2018-01-29
KR10-2018-0010478 2018-01-29
KR1020180010468A KR102017732B1 (ko) 2018-01-29 2018-01-29 반도체 발광소자 및 이의 제조방법
KR10-2018-0010468 2018-01-29
KR10-2018-0010469 2018-01-29
KR1020180010478A KR102017733B1 (ko) 2018-01-29 2018-01-29 반도체 발광소자 및 이의 제조방법
KR1020180010469A KR102066518B1 (ko) 2018-01-29 2018-01-29 반도체 발광소자 및 이의 제조방법
KR10-2018-0015695 2018-02-08
KR1020180015695A KR101946243B1 (ko) 2018-02-08 2018-02-08 반도체 발광소자의 제조방법
KR10-2018-0023051 2018-02-26
KR1020180023051A KR102051477B1 (ko) 2018-02-26 2018-02-26 반도체 발광소자의 제조방법

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CN112951869A (zh) * 2019-12-11 2021-06-11 美科米尚技术有限公司 透气式微型发光二极管显示器
CN115359736A (zh) * 2022-09-23 2022-11-18 武汉天马微电子有限公司 显示组件和显示装置

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CN112951869A (zh) * 2019-12-11 2021-06-11 美科米尚技术有限公司 透气式微型发光二极管显示器
CN112951869B (zh) * 2019-12-11 2024-03-08 美科米尚技术有限公司 透气式微型发光二极管显示器
CN115359736A (zh) * 2022-09-23 2022-11-18 武汉天马微电子有限公司 显示组件和显示装置
CN115359736B (zh) * 2022-09-23 2023-11-21 武汉天马微电子有限公司 显示组件和显示装置

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