WO2019037516A1 - Display panel, method for manufacturing same, electroluminescent device and display apparatus - Google Patents
Display panel, method for manufacturing same, electroluminescent device and display apparatus Download PDFInfo
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- WO2019037516A1 WO2019037516A1 PCT/CN2018/090438 CN2018090438W WO2019037516A1 WO 2019037516 A1 WO2019037516 A1 WO 2019037516A1 CN 2018090438 W CN2018090438 W CN 2018090438W WO 2019037516 A1 WO2019037516 A1 WO 2019037516A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Definitions
- At least one embodiment of the present disclosure is directed to a display panel and a method of fabricating the same, an electroluminescent device, and a display device.
- OLEDs organic light-emitting diodes
- CTRs cathode ray tube displays
- PDPs plasma displays
- LCDs liquid crystal displays
- OLEDs have autonomous illumination, bendability, wide viewing angle, fast response, ultra-thin, high luminous efficiency, and power consumption. Low, wide operating temperature, etc., is considered to be a more promising next-generation display.
- At least one embodiment of the present disclosure provides a display panel including: a substrate substrate; a plurality of electroluminescent units disposed on the substrate, the light emitting side of the electroluminescent unit includes a transparent electrode layer; and the first optical coupling output The layer is located on a side of the electroluminescent unit where the transparent electrode layer is disposed, and is in contact with at least a portion of the transparent electrode layer, and the first light coupling output layer is a conductive layer.
- the first light coupling output layer is a semiconductor layer including a first n-type dopant material or a first p-type dopant material.
- the thickness of the transparent electrode layer is the thickness of the transparent electrode layer.
- the first light coupling output layer is located on a side of the electroluminescent unit away from the substrate.
- a plurality of electroluminescent units are arranged in an array, and the first optical coupling output layer is a full-surface film layer covering a plurality of electroluminescent units.
- the display panel further includes: a second light coupling output layer located on a side of the first light coupling output layer away from the transparent electrode layer, and a refractive index of the second light coupling output layer is smaller than a refractive index of the first light coupling output layer.
- the second light coupling output layer is a semiconductor layer including a second n-type doping material or a second p-type doping material, and is in partial contact with the transparent electrode layer.
- the display panel further includes: a second light coupling output layer between the first light coupling output layer and the transparent electrode layer, and a refractive index of the second light coupling output layer is greater than a refractive index of the first light coupling output layer.
- the electroluminescent unit is an organic electroluminescent unit.
- At least one embodiment of the present disclosure provides an electroluminescent device comprising: a substrate; a light-emitting layer on the substrate; a transparent electrode layer on the light-emitting side of the light-emitting layer; and a light-coupled output layer on the transparent electrode
- the layer is away from one side of the light-emitting layer and is in contact with the transparent electrode layer, and the light-coupling output layer is a conductive layer.
- At least one embodiment of the present disclosure provides a method of fabricating a display panel, comprising: providing a substrate; forming a plurality of electroluminescent units on the substrate; forming the electroluminescent unit comprises: emitting light at the electroluminescent unit Forming a transparent electrode layer on the side; forming a first light-coupling output layer in contact with the at least partially transparent electrode layer on a side of the electroluminescent unit on which the transparent electrode layer is formed, and the first light-coupling output layer is a conductive layer.
- forming the first light coupling output layer includes: vaporizing the first host material and the first n-type doping material or the first p-type doping material to form the first light on a side of the transparent electrode layer away from the electroluminescent unit Coupling the output layer.
- the first light coupling output layer is formed on a side of the electroluminescent unit away from the substrate.
- the method before forming the first light coupling output layer, further comprises: forming a second light coupling output layer on a side of the transparent electrode layer away from the electroluminescent unit, wherein the second light coupling output layer has a refractive index smaller than the first light coupling output The refractive index of the layer.
- forming the second light coupling output layer includes: vaporizing a second host material and a second n-type dopant material or a second p-type dopant material on a side of the first light coupling output layer away from the transparent electrode layer to form a first The two light-coupled output layers are in contact with the second light-coupling output layer.
- the manufacturing method of the display panel further includes: forming a second light coupling output layer between the first light coupling output layer and the transparent electrode layer, wherein a refractive index of the second light coupling output layer is greater than that of the first light coupling output layer Refractive index.
- At least one embodiment of the present disclosure provides a display device including any of the above display panels.
- FIG. 1A is a partial cross-sectional view of a display panel according to an example of the embodiment.
- FIG. 1B is a partial plan view showing the structure of the display panel shown in FIG. 1A;
- 1C is a cross-sectional view of a partial display panel at an edge of a transparent electrode layer according to an embodiment of the present disclosure
- FIG. 2A is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure.
- FIG. 2B is a schematic plan view of the display panel shown in FIG. 2A;
- FIG. 2C is a schematic cross-sectional view of the YZ plane taken along line AB of the display panel shown in FIG. 2B;
- FIG. 2D is a schematic cross-sectional view of a YZ plane at the same position as FIG. 2C in another example of an embodiment of the present disclosure
- 2E is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure.
- 2F is a schematic cross-sectional view of the YZ plane taken along line AB of the display panel shown in FIG. 2E;
- 3A is a schematic cross-sectional view of an example of an electroluminescent device according to an embodiment of the present disclosure
- 3B is a schematic cross-sectional view of another example of an electroluminescent device according to an embodiment of the present disclosure.
- FIG. 4 is an exemplary flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure.
- OLED organic light-emitting diode
- Phosphorescent materials with a quantum efficiency of 100% have been widely used in OLED lighting and display devices, but due to the effects of refraction, reflection and absorption between the layers in the OLED device, only 20% of the light emitted by the OLED device can be removed from the device. When issued, about 80% of the remaining light will be limited or consumed inside the OLED device.
- the top-emitting OLED generally adopts a transparent cathode with a light coupling output layer (CPL) structure, that is, a transparent cathode is used to match the light coupling output layer to increase the light output.
- CPL light coupling output layer
- the cathode cannot be evaporated too thick.
- a thinner cathode increases the series resistance of the device, causing a large voltage drop, reducing the uniformity of the display panel in the device, affecting the display effect, and even causing anomalies at the junction of the cathode and the pixel definition layer (PDL). .
- the cathode thickness is usually increased to ensure the stability of performance.
- the cathode is too thick, it will affect the transmittance and color shift of the device. That is, under normal conditions, the cathode is too thick to cause excessive color shift.
- Embodiments of the present disclosure provide a display panel and a method of fabricating the same, an electroluminescent device, and a display device.
- the display panel comprises: a substrate; a plurality of electroluminescent units on the substrate, the light emitting side of the electroluminescent unit comprises a transparent electrode layer; and a first light coupling output layer, the transparent electrode is disposed in the electroluminescent unit One side of the layer is in contact with at least a portion of the transparent electrode layer, and the first light coupling output layer is a conductive layer.
- the display panel provided by the embodiment of the present disclosure includes a first light-coupled output layer having better conductive characteristics, can assist the transparent electrode layer to conduct electricity, reduce the thickness of the transparent electrode layer, and reduce the voltage drop of the display panel (IR-drop). Increase the uniformity of the device.
- FIG. 1A is a partial cross-sectional view of a display panel according to an example of the embodiment
- FIG. 1B is a partial plan view of the display panel of FIG.
- the display panel provided by the present example includes a base substrate 100, an electroluminescent unit 110, and a first photocoupled output layer 120.
- a plurality of electroluminescent units 110 are disposed on the base substrate 100.
- the light emitting side of the electroluminescent unit 110 includes a transparent electrode layer 111, that is, light emitted from the electroluminescent unit 110 passes through the transparent electrode layer 111 and exits.
- a first light coupling output layer 120 is disposed on a side where the electroluminescent unit 110 is provided with the transparent electrode layer 111, that is, light emitted from the transparent electrode layer 111 continues to be emitted through the first light coupling output layer 120.
- the first light coupling output layer 120 is at least partially in contact with the transparent electrode layer 111, and the first light coupling output layer 120 is a conductive layer.
- the material of the transparent electrode layer 111 may include Ag (silver), Al (aluminum), Mg: Ag (magnesium silver alloy), Mg: Al (magnesium aluminum alloy), Au (gold), ITO (indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), and the like.
- the first light-coupling output layer 120 functions to increase the light output of the general light-coupled output layer (CPL).
- the transparent electrode layer 111 is a metal material
- the surface plasmon of the transparent electrode layer 111 is reduced.
- the mode loss, the transmittance of the transparent electrode layer 111 is enhanced, and the refractive index of the first light-coupling output layer 120 should be selected to be high, for example, the refractive index of the first light-coupling output layer 120 is greater than 1.8, and the examples include but are not limited to this.
- the refractive index of the first light-coupling output layer 120 is selected to be high, a strong reflection is formed at the interface with the air, so that a transparent layer can be provided between the first light-coupling output layer 120 and the air.
- the buffer layer (not shown) has a refractive index between the first light-coupled output layer 120 and the air, which can attenuate the partial reflection to enhance the light-emitting purpose.
- the inventors of the present application have considered that the doping of a semiconductor film with a material having high conductivity can improve the conductivity of the film, for example, there are certain applications in the electron transport layer and the hole transport layer of the OLED device.
- a p-doping hole transport layer or a hole injection layer can reduce the driving voltage of the panel. Therefore, the display panel provided by the embodiment of the present disclosure may adopt p-doping or n-doping to increase the light-coupled output layer (the material of the light-coupled output layer is a semiconductor material) to increase Its conductive properties.
- the first light-coupling output layer 120 is a semiconductor layer including a first n-type doping material or a first p-type doping material, and the conductivity of the semiconductor host material can be increased after doping, and thus, the embodiment
- the provided first light-coupled output layer has the effect of increasing the light output, and has better conductivity, can assist the transparent electrode layer to conduct electricity, thereby reducing the voltage drop (IR-drop) of the display panel and increasing the uniformity of the device. .
- the first light-coupling output layer 120 provided in this embodiment has better conductive characteristics and can help the transparent electrode layer 111 to conduct electricity. Therefore, the thickness of the transparent electrode layer 111 in the embodiment can be thin, for example, a transparent electrode layer. The thickness of 111 can be Therefore, while ensuring the performance of the transparent electrode layer 111, the transmittance of the transparent electrode layer 111 can be improved, and the color shift can be reduced.
- the material of the first light-coupling output layer 120 may include NPB(N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4' -diamine), TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine) or Alq
- a material such as 3 (8-hydroxyquinoline aluminum) that is, a material of the first light-coupling output layer 120 may be the same semiconductor material as the hole transport layer or the electron transport layer, and the embodiment includes but is not limited thereto.
- the first light-coupling output layer 120 may be NPD (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine).
- the host material using HAT-CN (11-hexacyano-1; 12-hexaazabenzophenanthrene) as a doping material, p-doping the NPD to form better conductive properties
- HAT-CN 11-hexacyano-1; 12-hexaazabenzophenanthrene
- the embodiment is not limited to doping HAT-CN materials, and F4TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane), MoO 3 may also be used.
- P-type dopants such as (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), and WO 3 (tungsten trioxide).
- the first light coupling output layer 120 may further use Liq (lithium quinoline) as a host material, and use Cs ( ⁇ ) as a dopant material to perform n-doping on the Liq to form a better conductive layer.
- the present embodiment is not limited to a doped Cs material, and an n-type dopant such as Li (lithium), Li 2 CO 3 (lithium carbonate), or Cs 2 CO 3 (cesium carbonate) may also be used.
- the thickness of the first light-coupling output layer 120 in the direction perpendicular to the substrate 100 is 40-100 nm, and the embodiment includes but is not limited thereto.
- the transparent electrode layer 111 is located on the light exiting side of the electroluminescent unit 110, and the emitted light from the electroluminescent unit 110 is emitted from the transparent electrode layer 111 on the reverse side thereof without passing through the base substrate 100.
- the electroluminescent unit 110 is a top emitting structure.
- the electroluminescent unit 110 further includes a light emitting layer 112 and an electrode 113 located on a side of the light emitting layer 112 away from the transparent electrode layer 111.
- the material of the electrode 113 may include ITO/Ag/ITO (indium tin oxide/silver/indium tin oxide), Au (gold), ITO (indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), and the like.
- a reflective layer may be disposed between the electrode 113 and the base substrate 100 to reflect the light emitted from the electrode 113 so that the portion of the light is emitted through the first light-coupling output layer 120.
- the electroluminescent unit further includes a hole injection layer between the light-emitting layer 112 and the electrode 113 and a hole transport layer (not shown).
- the electroluminescent unit further includes an electron transport layer (not shown) between the light emitting layer 112 and the transparent electrode layer 111.
- a pixel defining layer 114 is disposed between adjacent electroluminescent units 110.
- the first light-coupling output layer 120 having a good conductivity is provided at the slope of the position at which the pixel defining layer 114 overlaps the transparent electrode layer 111, and the voltage drop due to the large resistance of the transparent electrode layer 111 can be reduced.
- a plurality of electroluminescent units 110 are arranged in an array in the X direction and the Y direction, and a broken line frame in the figure indicates the electroluminescent unit 110 arranged in an array.
- the transparent electrode layer 111 of the plurality of electroluminescent units 110 is a full-face film layer, that is, the transparent electrode layer 111 includes both a portion located in the electroluminescent unit 110 and a portion between the adjacent electroluminescent units 110. section.
- the first light coupling output layer 120 is a full surface film layer covering the plurality of electroluminescent units 110, that is, the first light coupling output layer 120 covers the transparent electrode layer 111.
- the first light coupling output layer 120 may completely cover the transparent electrode layer 111.
- the embodiment is not limited thereto.
- the first light coupling output layer 120 may also cover a portion of the transparent electrode layer 111. At this time, the first light coupling output layer 120 covers at least the transparent electrode layer 111 located in the electroluminescent unit 110.
- FIG. 1C is a schematic cross-sectional view of a partial display panel at an edge of a transparent electrode layer according to an embodiment of the present disclosure. As shown in FIG. 1C, the edge of the transparent electrode layer 111 extending in the Y direction is connected to the power source of the display panel through the electrical connection line 140.
- the first light-coupling output layer 120 may be a film layer of exactly the same size as the transparent electrode layer 111, that is, the orthographic projection and transparency of the first light-coupling output layer 120 on the substrate substrate 100.
- the orthographic projection of the electrode layer 111 on the base substrate 100 completely coincides, and therefore, the edge of the first light-coupling output layer 120 and the edge of the transparent electrode layer 111 are flush in a direction perpendicular to the substrate substrate 100 (i.e., the Z direction).
- the first light coupling output layer 120 may also be a film layer having a size slightly smaller than the size of the transparent electrode layer 111, that is, the orthographic projection of the first light coupling output layer 120 on the substrate substrate 100 is located in the transparent electrode layer 111. Within the orthographic projection on the base substrate 100.
- the orthographic projection of the first light-coupling output layer 120 on the base substrate 100 may be located adjacent to the transparent electrode.
- the layer 111 is in the middle of the orthographic projection on the base substrate 100.
- the first light-coupled output layer may also be located only in the light-emitting region of the electroluminescent unit.
- FIG. 2A is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure
- FIG. 2B is a plan view of the display panel shown in FIG. 2A
- FIG. 2C is a view along the AB of the display panel shown in FIG. 2B.
- the display panel further includes: a second light-coupling output layer 130 on a side of the first light-coupling output layer 120 away from the transparent electrode layer 111, and a refractive index of the second light-coupling output layer 130 is smaller than the first The refractive index of the light coupling output layer 120.
- the refractive index n 1 of the first optical coupling output layer 120 is >1.8
- the refractive index of the second optical coupling output layer 130 is 1.5 ⁇ n 2 ⁇ 1.8.
- This embodiment includes but is not limited thereto.
- a first light-coupling output layer having a higher refractive index is disposed on a side closer to the transparent electrode layer
- a second light-coupling output layer having a lower refractive index is disposed on a side away from the transparent electrode layer to further increase light output.
- the first light coupling output layer and the second light coupling output layer are a set of light coupling output layer groups, and the side of the second light coupling output layer away from the first light coupling output layer is further At least one set of light-coupled output layers may be disposed, that is, a plurality of light-coupled output layers may be disposed on a side of the second light-coupled output layer away from the first light-coupled output layer, and from the second light-coupled output layer In a direction away from the direction, the refractive indices of the plurality of light-coupled output layers are arranged at intervals.
- the material of the second light-coupling output layer 130 may include an organic small molecule material or an inorganic material having a high transmittance.
- the second light-coupling output layer 130 may be a semiconductor material layer including a second n-type doping material or a second p-type doping material, and partially in contact with the transparent electrode layer 111. Since the refractive index of the second optical coupling output layer 130 is smaller than the refractive index of the first optical coupling output layer 120, the conductivity of the second optical coupling output layer 130 after p-type doping or n-type doping is greater than the first optical coupling.
- the output layer 120 therefore, the second light-coupling output layer 130 in this example is in partial contact with the transparent electrode layer 111 to further assist the transparent electrode layer 111 to conduct electricity to reduce the voltage drop of the display panel and increase the uniformity of the device.
- the total thickness of the first light coupling output layer 120 and the second light coupling output layer 130 in a direction perpendicular to the substrate 100 is 40-100 nm, and the embodiment includes but is not limited thereto.
- FIG. 2B and FIG. 2C only illustrate these layers, and FIG. 2B does not illustrate FIG. 2C. Electrical connection line 140.
- the orthographic projection of the second optical coupling output layer 130 on the base substrate 100 completely coincides with the orthographic projection of the transparent electrode layer 111 on the base substrate 100, that is, perpendicular to the lining.
- the edge of the second light-coupling output layer 130 is flush with the edge of the transparent electrode layer 111.
- the orthographic projection of the first optical coupling output layer 120 on the base substrate 100 falls into the middle of the orthographic projection of the transparent electrode layer 111 on the base substrate 100, and is located on the electroluminescent unit. Therefore, the second optical coupling output layer 130 It may be in contact with the edge of the transparent electrode layer 111 not covered by the first light coupling output layer 120.
- the first light coupling output layer may also be located only in the light emitting area of the electroluminescent unit, that is, the first light coupling output layer is also arranged in an array, and the second light coupling output layer may also be The transparent electrode layer exposed to the gap between the adjacent first light-coupling output layers is electrically connected.
- the second light-coupling output layer 130 located at the inclined portion of the pixel defining layer 114 is in contact with the transparent electrode layer 111 to assist the transparent electrode layer 111 to conduct electricity.
- FIG. 2D is a schematic cross-sectional view of the YZ plane at the same position as FIG. 2C in another example of an embodiment of the present disclosure.
- the second light-coupling output layer 130 may also be a light-coupled output layer that does not perform p-type doping or n-type doping only to increase light output, and does not need to be in contact with the transparent electrode layer 111.
- FIG. 2E is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure
- FIG. 2F is a schematic cross-sectional view of the YZ plane taken along line AB of the display panel illustrated in FIG. 2E.
- the display panel includes a second light-coupling output layer 130 between the first light-coupled output layer 120 and the transparent electrode layer 111.
- the refractive index of the second light coupling output layer 130 is greater than the refractive index of the first light coupling output layer 120.
- the transparent electrode can be assisted.
- Layer 111 is electrically conductive, thereby reducing the voltage drop (IR-drop) of the display panel and increasing the uniformity of the device.
- the second optical coupling output layer in this example may be a film layer with better conductivity for p-type doping or n-type doping, or only for p-type doping or n-type doping. To the optical coupling output layer that increases the light output, this example does not limit this.
- the electroluminescent unit provided by the embodiment of the present disclosure is an organic electroluminescence unit.
- FIG. 3A is a schematic cross-sectional view of an electroluminescent device according to an example of an embodiment of the present disclosure.
- the electroluminescent device comprises: a substrate substrate 200, a light-emitting layer 212 on the substrate substrate 200, a transparent electrode layer 211 on the light-emitting side of the light-emitting layer 212, and a transparent electrode layer 211 away from the light-emitting layer.
- One side of 212, and a light coupling output layer 220 (which may also be referred to as a first light coupling output layer 220 in this embodiment) that is at least partially in contact with the transparent electrode layer 211, and the light coupling output layer 220 is a conductive layer.
- the material of the transparent electrode layer 211 may be a metal material, for example, including Ag (silver), Al (aluminum), Mg: Ag (magnesium silver alloy), Mg: Al (magnesium aluminum alloy), Au (gold), ITO. (Indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), and the like.
- a metal material for example, including Ag (silver), Al (aluminum), Mg: Ag (magnesium silver alloy), Mg: Al (magnesium aluminum alloy), Au (gold), ITO.
- Indium tin oxide SnO 2 (tin oxide), ZnO (zinc oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), and the like.
- the light coupling output layer 220 functions to increase the light output of the general light coupling output layer (CPL), and to reduce the SPP (surface plasmon) mode of the transparent electrode layer 211 when the transparent electrode layer 211 is a metal material.
- CPL general light coupling output layer
- SPP surface plasmon
- the loss, the transmittance of the transparent electrode layer 211 is enhanced, and the refractive index of the light-coupling output layer 220 should be selected to be high.
- the refractive index of the light-coupled output layer 220 is greater than 1.8, and the examples include but are not limited thereto.
- the light coupling output layer 220 is a semiconductor layer including an n-type dopant material or a p-type dopant material.
- the material of the optical coupling output layer 220 provided in this embodiment may be the same material as the first optical coupling output layer provided in the above embodiment, and details are not described herein again.
- the light-coupled output layer provided by the embodiment has the effect of increasing light output and having good electrical conductivity.
- the transparent electrode layer can be assisted to conduct electricity, thereby reducing the voltage drop (IR-drop) of the electroluminescent device.
- the transparent electrode layer 211 can be made conductive. Therefore, the thickness of the transparent electrode layer 211 in the embodiment can be thin. For example, the thickness of the transparent electrode layer 211 may be Therefore, while ensuring the stability of the transparent electrode layer, the transmittance of the transparent electrode layer can be improved, and the color shift can be reduced.
- the thickness of the light-coupling output layer 220 in the direction perpendicular to the substrate 200 is 40-100 nm, and the embodiment includes but is not limited thereto.
- the transparent electrode layer 211 is located on the side of the light-emitting layer 212 away from the base substrate 200, that is, the light emitted from the electroluminescent device does not pass through the base substrate 200 but is emitted from the reverse side thereof.
- the electroluminescent device is a top emitting structure.
- the electroluminescent device further includes an electrode 213, a hole injection layer 217, and a hole transport layer 216 between the light emitting layer 212 and the base substrate 200.
- the material of the hole injection layer 217 may include MoO 3 (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), PEDOT: PPS (3,4-ethylenedioxythiophene polymer: polystyrene sulfonate)
- MoO 3 molecular weight average
- V 2 O 5 vanadium pentoxide
- PEDOT PPS (3,4-ethylenedioxythiophene polymer: polystyrene sulfonate)
- the present embodiment includes but is not limited thereto.
- the electroluminescent device further includes an electron transport layer 215 between the light emitting layer 212 and the transparent electrode layer 211.
- the material of the electron transport layer 215 may include materials such as Liq (lithium quinoline), Alq 3 (8-hydroxyquinoline aluminum), and the present embodiment includes but is not limited thereto.
- the electrode 213 may be an anode, and the transparent electrode layer 211 may be a cathode; for an inverted type electroluminescent device, the electrode 213 may be a cathode, and the transparent electrode layer 211 may be an anode.
- the orthographic projection of the light-coupling output layer 220 on the substrate substrate 200 completely coincides with the orthographic projection of the transparent electrode layer 211 on the substrate substrate 200, that is, the light-coupling output layer 220 may be completely different in size from the transparent electrode layer 211.
- the same film layer is the same film layer.
- FIG. 3B is a schematic cross-sectional view of an electroluminescent device according to another example of an embodiment of the present disclosure.
- the electroluminescent device further includes a second light coupling output layer 230 on a side of the first light coupling output layer 220 away from the transparent electrode layer 211.
- the refractive index of the second light-coupling output layer 230 being less than the refractive index of the first light-coupling output layer 220 may further increase the light output of the electroluminescent device.
- the second optical coupling output layer provided in this embodiment is a film layer that only functions to increase light output.
- FIG. 4 is an exemplary flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure. As shown in Figure 4, it includes:
- the base substrate may be a highly transparent glass, a flexible polymer material, a metal foil, or the like, and the substrate is washed and dried for use.
- S302 forming a plurality of electroluminescent units on the base substrate, and forming the electroluminescent unit comprises: forming a transparent electrode layer on the light emitting side of the electroluminescent unit.
- forming a plurality of electroluminescent units on a base substrate includes forming a conductive layer on the base substrate.
- a conductive layer can be formed on a base substrate by chemical vapor deposition, magnetron sputtering, electron beam evaporation, solution spin coating, or the like. The conductive layer is then patterned to form a plurality of spaced apart electrodes.
- the material of the conductive layer may be ITO/Ag/ITO (indium tin oxide/silver/indium tin oxide), Au (gold), ITO (indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), Films such as FTO (fluorine-doped tin oxide) and AZO (aluminum-doped zinc oxide) are not limited in this embodiment.
- a hole injection layer that completely covers a plurality of spaced-apart electrodes is formed on a side of a plurality of spaced-apart electrodes away from the substrate.
- the material of the hole injection layer may include MoO 3 (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), PEDOT: PPS (3,4-ethylenedioxythiophene polymer: polystyrenesulfonic acid) Salt) and other materials.
- a hole transport layer may be formed by evaporation or solution on the side of the hole injection layer away from the substrate.
- a light-emitting layer is formed on a side of the hole transport layer away from the base substrate, and the material of the light-emitting layer includes a material such as Alq 3 (8-hydroxyquinoline aluminum) or DMQA (quinacridone).
- an electron transport layer is formed on a side of the light-emitting layer away from the base substrate, and the material of the electron transport layer may include materials such as Liq (lithium quinoline), Alq 3 (8-hydroxyquinoline aluminum).
- a transparent electrode layer is formed on a side of the electron transport layer away from the substrate.
- a full transparent electrode layer can be formed on the electron transport layer by chemical vapor deposition, magnetron sputtering, electron beam evaporation, solution spin coating or the like.
- the material of the transparent electrode layer includes Ag (silver), Al (aluminum), Mg: Ag (magnesium silver alloy), Mg: Al (magnesium aluminum alloy), Au (gold), ITO (indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), and the like.
- forming the first light-coupling output layer on the transparent electrode layer includes: vapor-depositing the first host material and the first n-type dopant material or the first p-type dopant material on a side of the transparent electrode layer away from the electroluminescent unit To form a first light coupling output layer.
- the first optical coupling output layer formed in this embodiment has the effect of increasing the light output, and has better conductive characteristics, can assist the transparent electrode layer to conduct electricity, thereby reducing the voltage drop of the display panel and increasing the uniformity of the device.
- the material of the first photocoupled output layer may include NPB(N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'- Diamine), TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine) or Alq 3
- a material such as (8-hydroxyquinoline aluminum) that is, a material of the first light-coupled output layer may be the same semiconductor material as the hole transport layer or the electron transport layer, and the embodiment includes but is not limited thereto.
- the first light coupling-out layer may be NPD (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) as a main component Materials, and using HAT-CN (11-hexacyano-1; 12-hexaazabenzophenanthrene) as a doping material, p-doping the NPD to form a better conductive property
- NPD N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine
- HAT-CN 11-hexacyano-1; 12-hexaazabenzophenanthrene
- the present embodiment is not limited to doping HAT-CN materials, and F4TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane), HAT- may also be used.
- a p-type dopant such as CN, MoO 3 (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), and WO 3 (tungsten trioxide).
- the first light coupling output layer may further use Liq (lithium quinoline) as a host material, and use Cs ( ⁇ ) as a doping material to perform n-doping on the Liq to form a good conductive property.
- Liq lithium quinoline
- Cs ⁇
- the present embodiment is not limited to a doped Cs material, and an n-type dopant such as Li (lithium), Li 2 CO 3 (lithium carbonate), or Cs 2 CO 3 (cesium carbonate) may also be used.
- an n-type dopant such as Li (lithium), Li 2 CO 3 (lithium carbonate), or Cs 2 CO 3 (cesium carbonate) may also be used.
- the thickness of the first light-coupling output layer in the direction perpendicular to the substrate substrate is 40-100 nm, and the embodiment includes but is not limited thereto.
- the manufacturing method provided by an example of the embodiment further includes: forming a second light coupling output layer on a side of the first light coupling output layer away from the transparent electrode layer, wherein the second light coupling output layer has a refractive index smaller than the first light The refractive index of the output layer is coupled to further increase the light output.
- forming the second light coupling output layer may include: vaporizing the second host material and the second n-type dopant material or the second p-type dopant on a side of the first light coupling output layer away from the transparent electrode layer
- the impurity material forms a second light coupling output layer, and the second light coupling output layer is in contact with the partial transparent electrode layer.
- the second light-coupled output layer may also be a light-coupled output layer that does not perform p-type doping or n-type doping only to increase light output, and does not need to be in contact with the transparent electrode layer.
- the manufacturing method provided by another example of the embodiment further includes: forming a second light coupling output layer between the first light coupling output layer and the transparent electrode layer, wherein the second light coupling output layer has a refractive index greater than the first light The refractive index of the output layer is coupled to further increase the light output.
- the second light-coupled output layer may be a semiconductor layer including a second n-type dopant material or a second p-type dopant material, or may be a layer that does not perform p-type doping or n-type doping.
- this embodiment does not limit this.
- the device may be packaged in an ultraviolet package or a frit package.
- the display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
- the first light-coupled output layer included in the display device has better conductive characteristics, can assist the transparent electrode layer to conduct electricity, reduce the thickness of the transparent electrode layer, and reduce the voltage drop in the display device, thereby increasing the uniformity of the device.
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Abstract
Description
相关申请的交叉引用Cross-reference to related applications
本申请要求于2017年8月25日递交的中国专利申请第201710744039.8号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。The present application claims priority to Chinese Patent Application No. JP-A No. No. No. No. No. No. No. No. No. No. No. No. No. No.
本公开至少一个实施例涉及一种显示面板及其制作方法、电致发光器件、显示装置。At least one embodiment of the present disclosure is directed to a display panel and a method of fabricating the same, an electroluminescent device, and a display device.
目前,有机发光二极管(OLED)在照明和显示等领域的应用越来越广泛。与传统的阴极射线管显示器(CRT)、等离子体显示器(PDP)、液晶显示器(LCD)等不同,OLED具有自主发光、可弯曲、宽视角、响应速度快、超轻薄、发光效率高、功耗低、工作温度宽等特点,被认为是更有应用前景的新一代显示器。At present, organic light-emitting diodes (OLEDs) are increasingly used in the fields of illumination and display. Unlike traditional cathode ray tube displays (CRTs), plasma displays (PDPs), liquid crystal displays (LCDs), etc., OLEDs have autonomous illumination, bendability, wide viewing angle, fast response, ultra-thin, high luminous efficiency, and power consumption. Low, wide operating temperature, etc., is considered to be a more promising next-generation display.
发明内容Summary of the invention
本公开的至少一实施例提供一种显示面板,包括:衬底基板;多个电致发光单元,位于衬底基板上,电致发光单元的出光侧包括透明电极层;以及第一光耦合输出层,位于电致发光单元设置透明电极层的一侧,且与至少部分透明电极层接触,第一光耦合输出层为导电层。At least one embodiment of the present disclosure provides a display panel including: a substrate substrate; a plurality of electroluminescent units disposed on the substrate, the light emitting side of the electroluminescent unit includes a transparent electrode layer; and the first optical coupling output The layer is located on a side of the electroluminescent unit where the transparent electrode layer is disposed, and is in contact with at least a portion of the transparent electrode layer, and the first light coupling output layer is a conductive layer.
例如,第一光耦合输出层为包括第一n型掺杂材料或第一p型掺杂材料的半导体层。For example, the first light coupling output layer is a semiconductor layer including a first n-type dopant material or a first p-type dopant material.
例如,透明电极层的厚度为 For example, the thickness of the transparent electrode layer is
例如,第一光耦合输出层位于电致发光单元远离衬底基板的一侧。For example, the first light coupling output layer is located on a side of the electroluminescent unit away from the substrate.
例如,多个电致发光单元呈阵列排布,第一光耦合输出层为覆盖多个电致发光单元的整面膜层。For example, a plurality of electroluminescent units are arranged in an array, and the first optical coupling output layer is a full-surface film layer covering a plurality of electroluminescent units.
例如,显示面板还包括:第二光耦合输出层,位于第一光耦合输出层远离透明电极层的一侧,且第二光耦合输出层的折射率小于第一光耦合输出层的折射率。For example, the display panel further includes: a second light coupling output layer located on a side of the first light coupling output layer away from the transparent electrode layer, and a refractive index of the second light coupling output layer is smaller than a refractive index of the first light coupling output layer.
例如,第二光耦合输出层为包括第二n型掺杂材料或第二p型掺杂材料的半导体层,且与透明电极层部分接触。For example, the second light coupling output layer is a semiconductor layer including a second n-type doping material or a second p-type doping material, and is in partial contact with the transparent electrode layer.
例如,显示面板还包括:第二光耦合输出层,位于第一光耦合输出层与透明电极层之间,且第二光耦合输出层的折射率大于第一光耦合输出层的折射率。For example, the display panel further includes: a second light coupling output layer between the first light coupling output layer and the transparent electrode layer, and a refractive index of the second light coupling output layer is greater than a refractive index of the first light coupling output layer.
例如,电致发光单元为有机电致发光单元。For example, the electroluminescent unit is an organic electroluminescent unit.
本公开的至少一实施例提供一种电致发光器件,包括:衬底基板;发光层,位于衬底基板上;透明电极层,位于发光层的出光侧;以及光耦合输出层,位于透明电极层远离发光层的一侧,且与透明电极层接触,并且,光耦合输出层为导电层。At least one embodiment of the present disclosure provides an electroluminescent device comprising: a substrate; a light-emitting layer on the substrate; a transparent electrode layer on the light-emitting side of the light-emitting layer; and a light-coupled output layer on the transparent electrode The layer is away from one side of the light-emitting layer and is in contact with the transparent electrode layer, and the light-coupling output layer is a conductive layer.
本公开的至少一实施例提供一种显示面板的制作方法,包括:提供衬底基板;在衬底基板上形成多个电致发光单元,形成电致发光单元包括:在电致发光单元的出光侧形成透明电极层;在电致发光单元的形成有透明电极层的一侧形成与至少部分透明电极层接触的第一光耦合输出层,并且,第一光耦合输出层为导电层。At least one embodiment of the present disclosure provides a method of fabricating a display panel, comprising: providing a substrate; forming a plurality of electroluminescent units on the substrate; forming the electroluminescent unit comprises: emitting light at the electroluminescent unit Forming a transparent electrode layer on the side; forming a first light-coupling output layer in contact with the at least partially transparent electrode layer on a side of the electroluminescent unit on which the transparent electrode layer is formed, and the first light-coupling output layer is a conductive layer.
例如,形成第一光耦合输出层包括:在透明电极层远离电致发光单元的一侧蒸镀第一主体材料以及第一n型掺杂材料或者第一p型掺杂材料以形成第一光耦合输出层。For example, forming the first light coupling output layer includes: vaporizing the first host material and the first n-type doping material or the first p-type doping material to form the first light on a side of the transparent electrode layer away from the electroluminescent unit Coupling the output layer.
例如,第一光耦合输出层形成在电致发光单元远离衬底基板的一侧。For example, the first light coupling output layer is formed on a side of the electroluminescent unit away from the substrate.
例如,形成第一光耦合输出层之前还包括:在透明电极层远离电致发光单元的一侧形成第二光耦合输出层,其中,第二光耦合输出层的折射率小于第一光耦合输出层的折射率。For example, before forming the first light coupling output layer, the method further comprises: forming a second light coupling output layer on a side of the transparent electrode layer away from the electroluminescent unit, wherein the second light coupling output layer has a refractive index smaller than the first light coupling output The refractive index of the layer.
例如,形成第二光耦合输出层包括:在第一光耦合输出层远离透明电极层的一侧蒸镀第二主体材料以及第二n型掺杂材料或第二p型掺杂材料以形成第二光耦合输出层,且第二光耦合输出层与透明电极层部分接触。For example, forming the second light coupling output layer includes: vaporizing a second host material and a second n-type dopant material or a second p-type dopant material on a side of the first light coupling output layer away from the transparent electrode layer to form a first The two light-coupled output layers are in contact with the second light-coupling output layer.
例如,显示面板的制作方法还包括:在第一光耦合输出层与透明电极层之间形成第二光耦合输出层,其中,第二光耦合输出层的折射率大于第一光耦合输出层的折射率。For example, the manufacturing method of the display panel further includes: forming a second light coupling output layer between the first light coupling output layer and the transparent electrode layer, wherein a refractive index of the second light coupling output layer is greater than that of the first light coupling output layer Refractive index.
本公开的至少一实施例提供一种显示装置,包括上述任一种显示面板。At least one embodiment of the present disclosure provides a display device including any of the above display panels.
为了更清楚地说明本公开实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本公开的一些实施例,而非对本公开的限制。In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly described below. It is obvious that the drawings in the following description relate only to some embodiments of the present disclosure, and are not to limit the disclosure. .
图1A为本实施例的一示例提供的显示面板的局部剖面示意图;1A is a partial cross-sectional view of a display panel according to an example of the embodiment;
图1B为图1A所示的显示面板的局部平面结构示意图;1B is a partial plan view showing the structure of the display panel shown in FIG. 1A;
图1C为本公开一实施例提供的位于透明电极层的边缘的局部显示面板的剖面示意图;1C is a cross-sectional view of a partial display panel at an edge of a transparent electrode layer according to an embodiment of the present disclosure;
图2A为本公开一实施例的另一示例提供的显示面板的局部剖面示意图;2A is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure;
图2B为图2A所示的显示面板的平面示意图;2B is a schematic plan view of the display panel shown in FIG. 2A;
图2C为图2B所示的显示面板的沿AB线所截的YZ面的截面示意图;2C is a schematic cross-sectional view of the YZ plane taken along line AB of the display panel shown in FIG. 2B;
图2D为本公开一实施例的另一示例中与图2C相同位置的YZ面的截面示意图;2D is a schematic cross-sectional view of a YZ plane at the same position as FIG. 2C in another example of an embodiment of the present disclosure;
图2E为本公开一实施例的另一示例提供的显示面板的局部剖面示意图;2E is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure;
图2F为图2E所示的显示面板的沿AB线所截的YZ面的截面示意图;2F is a schematic cross-sectional view of the YZ plane taken along line AB of the display panel shown in FIG. 2E;
图3A为本公开一实施例的一示例提供的电致发光器件的剖面示意图;3A is a schematic cross-sectional view of an example of an electroluminescent device according to an embodiment of the present disclosure;
图3B为本公开一实施例的另一示例提供的电致发光器件的剖面示意图;3B is a schematic cross-sectional view of another example of an electroluminescent device according to an embodiment of the present disclosure;
图4为本公开一实施例提供的显示面板的制作方法的示例性流程图。FIG. 4 is an exemplary flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure.
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. It is apparent that the described embodiments are part of the embodiments of the present disclosure, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present disclosure without departing from the scope of the invention are within the scope of the disclosure.
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, technical terms or scientific terms used in the present disclosure are intended to be understood in the ordinary meaning of the ordinary skill of the art. The words "first," "second," and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The word "comprising" or "comprises" or the like means that the element or item preceding the word is intended to be in the "Upper", "lower", "left", "right", etc. are only used to indicate the relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may also change accordingly.
有机发光二极管(OLED)器件的外量子效率是器件向外发射的光子数与注入的电子空穴对数量之比,目前,人们对获取高量子效率的努力一直没有停止。量子效率为100%的磷光发光材料已经广泛应用于OLED照明和显示器件,但是由于OLED器件中各膜层之间折射、反射和吸收等作用,导致OLED器件发出的光只有20%可以从器件中发出,剩下的约80%的光会被局限或者消耗在OLED器件内部。The external quantum efficiency of organic light-emitting diode (OLED) devices is the ratio of the number of photons emitted by the device to the number of electron-hole pairs injected. At present, efforts to obtain high quantum efficiency have not stopped. Phosphorescent materials with a quantum efficiency of 100% have been widely used in OLED lighting and display devices, but due to the effects of refraction, reflection and absorption between the layers in the OLED device, only 20% of the light emitted by the OLED device can be removed from the device. When issued, about 80% of the remaining light will be limited or consumed inside the OLED device.
在研究中,本申请的发明人发现:一般顶发射的OLED器件中的微腔结构可以有效的增加光输出,使OLED的效率能够大幅度的提高。顶发射的OLED一般会采用透明阴极配合光耦合输出层(coupling layer,CPL)的结构,即采用透明阴极配合光耦合输出层以增加光输出。为了保证透明阴极的透光率,阴极不能蒸镀过厚。但是,较薄的阴极会增加器件的串联电阻,从而引起较大的电压降、降低器件中显示面板均一性、影响显示效果,甚至还会导致阴极与像素定义层(PDL)搭接处出现异常。In the research, the inventors of the present application found that the microcavity structure in the general top-emitting OLED device can effectively increase the light output, and the efficiency of the OLED can be greatly improved. The top-emitting OLED generally adopts a transparent cathode with a light coupling output layer (CPL) structure, that is, a transparent cathode is used to match the light coupling output layer to increase the light output. In order to ensure the light transmittance of the transparent cathode, the cathode cannot be evaporated too thick. However, a thinner cathode increases the series resistance of the device, causing a large voltage drop, reducing the uniformity of the display panel in the device, affecting the display effect, and even causing anomalies at the junction of the cathode and the pixel definition layer (PDL). .
为了防止阴极过薄造成的不利影响,通常会增加阴极厚度以保证性能的稳定。但是,阴极过厚又会影响器件的透光率和色偏,即,通常情况下阴极过厚会导致色偏过大。In order to prevent the adverse effects caused by the cathode being too thin, the cathode thickness is usually increased to ensure the stability of performance. However, if the cathode is too thick, it will affect the transmittance and color shift of the device. That is, under normal conditions, the cathode is too thick to cause excessive color shift.
本公开的实施例提供一种显示面板及其制作方法、电致发光器件、显示装置。该显示面板包括:衬底基板;多个电致发光单元,位于衬底基板上,电致发光单元的出光侧包括透明电极层;以及第一光耦合输出层,位于电致发光单元设置透明电极层的一侧,且与至少部分透明电极层接触,第一光耦合输出层为导电层。本公开实施例提供的显示面板包括的第一光耦合输出层具有较好的导电特性,可以辅助透明电极层导电,以降低透明电极层的厚度,并且降低显示面板的电压降(IR-drop),增加器件的均一性。Embodiments of the present disclosure provide a display panel and a method of fabricating the same, an electroluminescent device, and a display device. The display panel comprises: a substrate; a plurality of electroluminescent units on the substrate, the light emitting side of the electroluminescent unit comprises a transparent electrode layer; and a first light coupling output layer, the transparent electrode is disposed in the electroluminescent unit One side of the layer is in contact with at least a portion of the transparent electrode layer, and the first light coupling output layer is a conductive layer. The display panel provided by the embodiment of the present disclosure includes a first light-coupled output layer having better conductive characteristics, can assist the transparent electrode layer to conduct electricity, reduce the thickness of the transparent electrode layer, and reduce the voltage drop of the display panel (IR-drop). Increase the uniformity of the device.
下面结合附图对本公开实施例提供的显示面板及其制作方法、电致发光器件、显示装置进行描述。The display panel and the manufacturing method thereof, the electroluminescent device and the display device provided by the embodiments of the present disclosure are described below with reference to the accompanying drawings.
本公开一实施例提供一种显示面板,图1A为本实施例的一示例提供的显示面板的局部剖面示意图,图1B为图1A所示的显示面板的局部平面结构示意图。如图1A所示,本示例提供的显示面板包括:衬底基板100、电致发光单元110以及第一光耦合输出层120。多个电致发光单元110位于衬底基板100上,电致发光单元110的出光侧包括透明电极层111,即,电致发光单元110发出的光经过透明电极层111后出射。在电致发光单元110设置透明电极层111 的一侧设置有第一光耦合输出层120,即,从透明电极层111出射的光经过第一光耦合输出层120继续出射。第一光耦合输出层120与透明电极层111至少部分接触,且第一光耦合输出层120为导电层。An embodiment of the present disclosure provides a display panel. FIG. 1A is a partial cross-sectional view of a display panel according to an example of the embodiment, and FIG. 1B is a partial plan view of the display panel of FIG. As shown in FIG. 1A, the display panel provided by the present example includes a
例如,透明电极层111的材料可以包括Ag(银)、Al(铝),Mg:Ag(镁银合金)、Mg:Al(镁铝合金)、Au(金)、ITO(氧化铟锡)、SnO
2(氧化锡)、ZnO(氧化锌)、FTO(氟掺杂锡氧化物)、AZO(铝掺杂的氧化锌)等。
For example, the material of the
例如,第一光耦合输出层120起到了一般光耦合输出层(CPL)增加光输出的作用,当透明电极层111为金属材料时,为减小透明电极层111的SPP(表面等离子体激元)模式损耗,增强透明电极层111的透过率,第一光耦合输出层120的折射率选取应较高,例如,第一光耦合输出层120的折射率大于1.8,本示例包括但不限于此。For example, the first light-
例如,由于第一光耦合输出层120的折射率选取较高后,在其与空气的界面处会形成较强的反射,因此可以在第一光耦合输出层120和空气之间设置一层透明缓冲层(图中未示出),其折射率介于第一光耦合输出层120和空气之间,可以减弱这部分反射,达到增强出光的目的。For example, since the refractive index of the first light-
例如,本申请的发明人考虑到对半导体薄膜掺杂导电性较高的材料可以提高薄膜的导电性能,例如,目前在OLED器件的电子传输层和空穴传输层中有了一定的应用。例如,采用p型掺杂(p-doping)的空穴传输层或者空穴注入层可以降低面板的驱动电压。因此,本公开实施例提供的显示面板可以采用对光耦合输出层(光耦合输出层的材料为半导体材料)进行p型掺杂(p-doping)或者n型掺杂(n-doping)以增加其导电特性。For example, the inventors of the present application have considered that the doping of a semiconductor film with a material having high conductivity can improve the conductivity of the film, for example, there are certain applications in the electron transport layer and the hole transport layer of the OLED device. For example, a p-doping hole transport layer or a hole injection layer can reduce the driving voltage of the panel. Therefore, the display panel provided by the embodiment of the present disclosure may adopt p-doping or n-doping to increase the light-coupled output layer (the material of the light-coupled output layer is a semiconductor material) to increase Its conductive properties.
例如,第一光耦合输出层120为包括第一n型掺杂材料或第一p型掺杂材料的半导体层,在对半导体主体材料进行掺杂以后可以增加其导电性,因而,本实施例提供的第一光耦合输出层在具有增加光输出效果的同时,由于具有较好的导电特性,可以辅助透明电极层导电,从而降低显示面板的电压降(IR-drop),增加器件的均一性。For example, the first light-
例如,本实施例提供的第一光耦合输出层120具有较好的导电特性,可以辅助透明电极层111导电,因此,本实施例中透明电极层111的厚度可以较薄,例如,透明电极层111的厚度可以为
从而在保证透明电极层111性能稳定的同时,还可以提高透明电极层111的透过率,并且降低色偏。
For example, the first light-
例如,第一光耦合输出层120的材料可以包括NPB(N,N’-双(1-萘基) -N,N’-二苯基-1,1’-二苯基-4,4’-二胺)、TPD(N,N’-双(3-甲基苯基)-N,N’-二苯基-1,1’-二苯基-4,4’-二胺)或者Alq
3(8羟基喹啉铝)等材料,即,第一光耦合输出层120的材料可以选用与空穴传输层或者电子传输层相同的半导体材料,本实施例包括但不限于此。
For example, the material of the first light-
例如,第一光耦合输出层120可以NPD(N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺)作为主体材料,并利用HAT-CN(11-六氰基-1;12-六氮杂苯并菲)作为掺杂材料,对NPD进行p型掺杂(p-doping)以形成具有较好导电特性的第一光耦合输出层120。For example, the first light-
例如,本实施例不限于掺杂HAT-CN材料,还可采用F4TCNQ(2,3,5,6-四氟-7,7',8,8'-四氰醌-二甲烷)、MoO 3(三氧化钼)、V 2O 5(五氧化二钒)、WO 3(三氧化钨)等p型掺杂剂。 For example, the embodiment is not limited to doping HAT-CN materials, and F4TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane), MoO 3 may also be used. P-type dopants such as (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), and WO 3 (tungsten trioxide).
例如,第一光耦合输出层120还可以Liq(锂喹啉)作为主体材料,并利用Cs(铯)作为掺杂材料,对Liq进行n型掺杂(n-doping)以形成具有较好导电特性的第一光耦合输出层120。例如,本实施例不限于掺杂Cs材料,还可采用Li(锂)、Li
2CO
3(碳酸锂)、Cs
2CO
3(碳酸铯)等n型掺杂剂。
For example, the first light
例如,第一光耦合输出层120沿垂直于衬底基板100方向的厚度为40-100nm,本实施例包括但不限于此。For example, the thickness of the first light-
例如,如图1A所示,透明电极层111位于电致发光单元110的出光侧,从电致发光单元110的出射光不经过衬底基板100而是从其反面的透明电极层111射出,因此,电致发光单元110为顶发射结构。For example, as shown in FIG. 1A, the
例如,电致发光单元110还包括发光层112以及位于发光层112远离透明电极层111一侧的电极113。For example, the
例如,电极113的材料可以包括ITO/Ag/ITO(氧化铟锡/银/氧化铟锡),Au(金)、ITO(氧化铟锡)、SnO
2(氧化锡)、ZnO(氧化锌)、FTO(氟掺杂锡氧化物)、AZO(铝掺杂的氧化锌)等。在电极113采用透明导电电极时,可在电极113与衬底基板100之间设置一层反射层以对从电极113出射的光进行反射,以使该部分光通过第一光耦合输出层120出射。
For example, the material of the
例如,电致发光单元还包括位于发光层112与电极113之间的空穴注入层以及空穴传输层(图中未示出)。For example, the electroluminescent unit further includes a hole injection layer between the light-emitting
例如,电致发光单元还包括位于发光层112与透明电极层111之间的电子传输层(图中未示出)。For example, the electroluminescent unit further includes an electron transport layer (not shown) between the light emitting
例如,相邻的电致发光单元110之间设置有像素限定层114。例如,像素限定层114与透明电极层111搭接的位置的斜坡处设置有导电性较好的第一光耦合输出层120,可以降低因透明电极层111的较大电阻产生的电压降。For example, a
例如,如图1B所示,多个电致发光单元110沿X方向和Y方向呈阵列排布,图中的虚线框表示阵列排布的电致发光单元110。多个电致发光单元110中的透明电极层111为整面膜层,即,透明电极层111既包括位于电致发光单元110中的部分,也包括位于相邻的电致发光单元110之间的部分。第一光耦合输出层120为覆盖多个电致发光单元110的整面膜层,即,第一光耦合输出层120覆盖透明电极层111。For example, as shown in FIG. 1B, a plurality of
例如,第一光耦合输出层120可以完全覆盖透明电极层111。本实施例不限于此,例如,第一光耦合输出层120也可以覆盖部分透明电极层111,此时,第一光耦合输出层120至少覆盖位于电致发光单元110中的透明电极层111。For example, the first light
例如,图1C为本公开一实施例提供的位于透明电极层的边缘的局部显示面板的剖面示意图。如图1C所示,在透明电极层111的位于沿Y方向延伸的边缘通过电连接线140与显示面板的电源相连接。For example, FIG. 1C is a schematic cross-sectional view of a partial display panel at an edge of a transparent electrode layer according to an embodiment of the present disclosure. As shown in FIG. 1C, the edge of the
例如,如图1C所示,第一光耦合输出层120可以为与透明电极层111的尺寸完全相同的膜层,即,第一光耦合输出层120在衬底基板100上的正投影与透明电极层111在衬底基板100上的正投影完全重合,因此,第一光耦合输出层120的边缘与透明电极层111的边缘沿垂直于衬底基板100的方向(即Z方向)平齐。For example, as shown in FIG. 1C, the first light-
例如,第一光耦合输出层120还可以为尺寸稍小于透明电极层111的尺寸的膜层,即,第一光耦合输出层120在衬底基板100上的正投影位于透明电极层111在衬底基板100上的正投影内。For example, the first light
例如,在保证第一光耦合输出层120覆盖位于电致发光单元中的透明电极层111的基础上,第一光耦合输出层120在衬底基板100上的正投影可以位于相邻的透明电极层111在衬底基板100上的正投影的中间。For example, on the basis of ensuring that the first light-
例如,第一光耦合输出层也可以仅位于电致发光单元的发光区。For example, the first light-coupled output layer may also be located only in the light-emitting region of the electroluminescent unit.
例如,图2A为本公开一实施例的另一示例提供的显示面板的局部剖面示意图,图2B为图2A所示的显示面板的平面示意图,图2C为图2B所示的显示面板的沿AB线所截的YZ面的截面示意图。如图2A所示,显示面板还包括:第二光耦合输出层130,位于第一光耦合输出层120远离透明电极层111 的一侧,且第二光耦合输出层130的折射率小于第一光耦合输出层120的折射率。2A is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure, FIG. 2B is a plan view of the display panel shown in FIG. 2A, and FIG. 2C is a view along the AB of the display panel shown in FIG. 2B. A schematic cross-sectional view of the YZ plane cut by the line. As shown in FIG. 2A, the display panel further includes: a second light-
例如,第一光耦合输出层120的折射率n
1>1.8,第二光耦合输出层130的折射率1.5<n
2<1.8,本实施例包括但不限于此。本实施例中在靠近透明电极层一侧设置折射率较高的第一光耦合输出层,远离透明电极层的一侧设置折射率较低的第二光耦合输出层可以进一步增加光输出。本实施例不限于此,例如,以第一光耦合输出层和第二光耦合输出层为一组光耦合输出层组,在第二光耦合输出层远离第一光耦合输出层的一侧还可以设置至少一组光耦合输出层组,即,在第二光耦合输出层远离第一光耦合输出层的一侧还可以设置多个光耦合输出层,且从靠近第二光耦合输出层向远离的方向,该多个光耦合输出层的折射率高低间隔排列。
For example, the refractive index n 1 of the first optical
例如,第二光耦合输出层130的材料可以包括透过率较高的有机小分子材料或者无机材料。For example, the material of the second light-
例如,本实施例的一示例中,第二光耦合输出层130可以为包括第二n型掺杂材料或第二p型掺杂材料的半导体材料层,且与透明电极层111部分接触。由于第二光耦合输出层130的折射率小于第一光耦合输出层120的折射率,对第二光耦合输出层130进行p型掺杂或者n型掺杂后其电导率大于第一光耦合输出层120,因此,本示例中的第二光耦合输出层130与透明电极层111部分接触可以进一步辅助透明电极层111导电,以降低显示面板的电压降,增加器件的均匀性。For example, in an example of the embodiment, the second light-
例如,第一光耦合输出层120与第二光耦合输出层130的沿垂直于衬底基板100方向的总厚度为40-100nm,本实施例包括但不限于此。For example, the total thickness of the first light
为了清楚示意第一光耦合输出层120、第二光耦合输出层130以及透明电极层111的位置关系,图2B与图2C仅示意了这几层,且图2B中也没有示意出图2C中的电连接线140。In order to clearly illustrate the positional relationship of the first optical
例如,如图2B和图2C所示,第二光耦合输出层130在衬底基板100上的正投影与透明电极层111在衬底基板100上的正投影完全重合,即,沿垂直于衬底基板100的方向,第二光耦合输出层130的边缘与透明电极层111的边缘平齐。第一光耦合输出层120在衬底基板100上的正投影落入透明电极层111在衬底基板100上的正投影中部,且位于电致发光单元上,因此,第二光耦合输出层130可以与第一光耦合输出层120未覆盖的透明电极层111的边缘接触。 本实施例不限于此,例如,第一光耦合输出层也可以仅位于电致发光单元的发光区,即,第一光耦合输出层也为阵列排布,则第二光耦合输出层还可以与被相邻的第一光耦合输出层之间的空隙裸露的透明电极层电连接。For example, as shown in FIGS. 2B and 2C, the orthographic projection of the second optical
例如,如图2C所示,位于像素限定层114的倾斜部分的第二光耦合输出层130与透明电极层111接触以辅助透明电极层111导电。For example, as shown in FIG. 2C, the second light-
例如,图2D为本公开一实施例的另一示例中与图2C相同位置的YZ面的截面示意图。如图2D所示,第二光耦合输出层130也可以是不进行p型掺杂或者n型掺杂的仅起到增加光输出作用的光耦合输出层,且无需与透明电极层111接触。For example, FIG. 2D is a schematic cross-sectional view of the YZ plane at the same position as FIG. 2C in another example of an embodiment of the present disclosure. As shown in FIG. 2D, the second light-
例如,图2E为本公开一实施例的另一示例提供的显示面板的局部剖面示意图,图2F为图2E所示的显示面板的沿AB线所截的YZ面的截面示意图。如图2E和图2F所示,在本公开一实施例提供的另一示例中,显示面板包括的第二光耦合输出层130,位于第一光耦合输出层120与透明电极层111之间,且第二光耦合输出层130的折射率大于第一光耦合输出层120的折射率。由于第一光耦合输出层120与至少部分透明电极层111接触,且第一光耦合输出层120在进行p型掺杂或者n型掺杂后具有较好的导电性,因此,可以辅助透明电极层111导电,从而降低显示面板的电压降(IR-drop),增加器件的均一性。本示例中的第二光耦合输出层既可以是进行p型掺杂或者n型掺杂的具有较好导电性的膜层,也可以是不进行p型掺杂或者n型掺杂的仅起到增加光输出作用的光耦合输出层,本示例对此不做限定。For example, FIG. 2E is a partial cross-sectional view of a display panel according to another example of an embodiment of the present disclosure, and FIG. 2F is a schematic cross-sectional view of the YZ plane taken along line AB of the display panel illustrated in FIG. 2E. As shown in FIG. 2E and FIG. 2F, in another example provided by an embodiment of the present disclosure, the display panel includes a second light-
例如,本公开实施例提供的电致发光单元为有机电致发光单元。For example, the electroluminescent unit provided by the embodiment of the present disclosure is an organic electroluminescence unit.
本公开另一实施例提供一种电致发光器件,图3A为本公开一实施例的一示例提供的电致发光器件的剖面示意图。如图3A所示,该电致发光器件包括:衬底基板200,位于衬底基板200上的发光层212,位于发光层212的出光侧的透明电极层211以及位于透明电极层211远离发光层212的一侧,且与透明电极层211至少部分接触的光耦合输出层220(本实施例中也可以称为第一光耦合输出层220),且光耦合输出层220为导电层。Another embodiment of the present disclosure provides an electroluminescent device. FIG. 3A is a schematic cross-sectional view of an electroluminescent device according to an example of an embodiment of the present disclosure. As shown in FIG. 3A, the electroluminescent device comprises: a
例如,透明电极层211的材料可以为金属材料,例如,包括Ag(银)、Al(铝),Mg:Ag(镁银合金)、Mg:Al(镁铝合金)、Au(金)、ITO(氧化铟锡)、SnO
2(氧化锡)、ZnO(氧化锌)、FTO(氟掺杂锡氧化物)、AZO(铝掺杂的氧化锌)等。
For example, the material of the
例如,光耦合输出层220起到了一般光耦合输出层(CPL)增加光输出的作用,当透明电极层211为金属材料时,为减小透明电极层211的SPP(表面等离子体激元)模式损耗,增强透明电极层211的透过率,光耦合输出层220的折射率选取应较高,例如,光耦合输出层220的折射率大于1.8,本示例包括但不限于此。For example, the light
例如,光耦合输出层220为包括n型掺杂材料或p型掺杂材料的半导体层。例如,本实施例提供的光耦合输出层220的材料可以为与上述实施例提供的第一光耦合输出层相同的材料,在此不再赘述。For example, the light
由于在对光耦合输出层220的半导体主体材料进行掺杂以后可以增加其导电性,因而,本实施例提供的光耦合输出层在具有增加光输出效果的同时,因具有较好的导电特性,可以辅助透明电极层导电,从而降低电致发光器件的电压降(IR-drop)。Since the conductivity of the semiconductor body material of the light-coupled
例如,由于本实施例提供的光耦合输出层220具有较好的导电特性,可以辅助透明电极层211导电,因此,本实施例中透明电极层211的厚度可以较薄。例如,透明电极层211的厚度可以为
从而在保证透明电极层性能稳定的同时,还可以提高透明电极层的透过率,并且降低色偏。
For example, since the optical
例如,光耦合输出层220沿垂直于衬底基板200方向的厚度为40-100nm,本实施例包括但不限于此。For example, the thickness of the light-
例如,如图3A所示,透明电极层211位于发光层212远离衬底基板200的一侧,即,从电致发光器件出射的光不经过衬底基板200而是从其反面射出,因此,电致发光器件为顶发射结构。For example, as shown in FIG. 3A, the
例如,电致发光器件还包括位于发光层212与衬底基板200之间的电极213、空穴注入层217以及空穴传输层216。For example, the electroluminescent device further includes an
例如,空穴注入层217的材料可以包括MoO
3(三氧化钼)、V
2O
5(五氧化二钒)、PEDOT:PPS(3,4-乙撑二氧噻吩聚合物:聚苯乙烯磺酸盐)等材料中的一种或几种,本实施例包括但不限于此。
For example, the material of the
例如,电致发光器件还包括位于发光层212与透明电极层211之间的电子传输层215。For example, the electroluminescent device further includes an
例如,电子传输层215的材料可以包括Liq(锂喹啉)、Alq
3(8羟基喹啉铝)等材料,本实施例包括但不限于此。
For example, the material of the
例如,对于正置型电致发光器件,电极213可以为阳极,透明电极层211 可以为阴极;对于倒置型电致发光器件,电极213可以为阴极,透明电极层211可以为阳极。For example, for an upright type electroluminescent device, the
例如,光耦合输出层220在衬底基板200上的正投影与透明电极层211在衬底基板200上的正投影完全重合,即,光耦合输出层220可以为与透明电极层211的尺寸完全相同的膜层。For example, the orthographic projection of the light-
例如,图3B为本公开一实施例的另一示例提供的电致发光器件的剖面示意图。如图3B所示,电致发光器件还包括:第二光耦合输出层230,位于第一光耦合输出层220远离透明电极层211的一侧。For example, FIG. 3B is a schematic cross-sectional view of an electroluminescent device according to another example of an embodiment of the present disclosure. As shown in FIG. 3B, the electroluminescent device further includes a second light
例如,第二光耦合输出层230的折射率小于第一光耦合输出层220的折射率可以进一步增加电致发光器件的光输出。本实施例提供的第二光耦合输出层为仅起到增加光输出作用的膜层。For example, the refractive index of the second light-
本公开另一实施例提供一种显示面板的制作方法,图4为本公开一实施例提供的显示面板的制作方法的示例性流程图。如图4所示,包括:Another embodiment of the present disclosure provides a method for fabricating a display panel, and FIG. 4 is an exemplary flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure. As shown in Figure 4, it includes:
S301:提供衬底基板。S301: Providing a base substrate.
例如,衬底基板可以为高透光的玻璃、柔性聚合物材料、金属薄片等,将衬底基板进行清洗并干燥备用。For example, the base substrate may be a highly transparent glass, a flexible polymer material, a metal foil, or the like, and the substrate is washed and dried for use.
S302:在衬底基板上形成多个电致发光单元,形成电致发光单元包括:在电致发光单元的出光侧形成透明电极层。S302: forming a plurality of electroluminescent units on the base substrate, and forming the electroluminescent unit comprises: forming a transparent electrode layer on the light emitting side of the electroluminescent unit.
例如,在衬底基板形成多个电致发光单元包括在衬底基板上形成导电层。例如,可以利用化学气相沉积、磁控溅射、电子束蒸发、溶液旋涂等方法在衬底基板上形成导电层。然后对导电层图案化以形成多个间隔分布的电极。For example, forming a plurality of electroluminescent units on a base substrate includes forming a conductive layer on the base substrate. For example, a conductive layer can be formed on a base substrate by chemical vapor deposition, magnetron sputtering, electron beam evaporation, solution spin coating, or the like. The conductive layer is then patterned to form a plurality of spaced apart electrodes.
例如,导电层的材料可以为ITO/Ag/ITO(氧化铟锡/银/氧化铟锡),Au(金)、ITO(氧化铟锡)、SnO 2(氧化锡)、ZnO(氧化锌)、FTO(氟掺杂锡氧化物)、AZO(铝掺杂的氧化锌)等薄膜,本实施例对此不作限制。 For example, the material of the conductive layer may be ITO/Ag/ITO (indium tin oxide/silver/indium tin oxide), Au (gold), ITO (indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), Films such as FTO (fluorine-doped tin oxide) and AZO (aluminum-doped zinc oxide) are not limited in this embodiment.
例如,在多个间隔分布的电极远离衬底基板的一侧形成完全覆盖多个间隔分布的电极的空穴注入层。For example, a hole injection layer that completely covers a plurality of spaced-apart electrodes is formed on a side of a plurality of spaced-apart electrodes away from the substrate.
例如,空穴注入层的材料可以包括MoO 3(三氧化钼)、V 2O 5(五氧化二钒)、PEDOT:PPS(3,4-乙撑二氧噻吩聚合物:聚苯乙烯磺酸盐)等材料。 For example, the material of the hole injection layer may include MoO 3 (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), PEDOT: PPS (3,4-ethylenedioxythiophene polymer: polystyrenesulfonic acid) Salt) and other materials.
例如,在空穴注入层远离衬底基板的一侧可通过蒸镀或者溶液法形成空穴传输层。For example, a hole transport layer may be formed by evaporation or solution on the side of the hole injection layer away from the substrate.
例如,在空穴传输层远离衬底基板的一侧形成发光层,发光层的材料包括 Alq 3(8羟基喹啉铝)、DMQA(喹吖啶酮)等材料。 For example, a light-emitting layer is formed on a side of the hole transport layer away from the base substrate, and the material of the light-emitting layer includes a material such as Alq 3 (8-hydroxyquinoline aluminum) or DMQA (quinacridone).
例如,在发光层远离衬底基板的一侧形成电子传输层,电子传输层的材料可以包括Liq(锂喹啉)、Alq 3(8羟基喹啉铝)等材料。 For example, an electron transport layer is formed on a side of the light-emitting layer away from the base substrate, and the material of the electron transport layer may include materials such as Liq (lithium quinoline), Alq 3 (8-hydroxyquinoline aluminum).
例如,在电子传输层远离衬底基板的一侧形成透明电极层。For example, a transparent electrode layer is formed on a side of the electron transport layer away from the substrate.
例如,可以利用化学气相沉积、磁控溅射、电子束蒸发、溶液旋涂等方法在电子传输层上形成整层透明电极层。For example, a full transparent electrode layer can be formed on the electron transport layer by chemical vapor deposition, magnetron sputtering, electron beam evaporation, solution spin coating or the like.
例如,透明电极层的材料包括Ag(银)、Al(铝),Mg:Ag(镁银合金)、Mg:Al(镁铝合金)、Au(金)、ITO(氧化铟锡)、SnO 2(氧化锡)、ZnO(氧化锌)、FTO(氟掺杂锡氧化物)、AZO(铝掺杂的氧化锌)等。 For example, the material of the transparent electrode layer includes Ag (silver), Al (aluminum), Mg: Ag (magnesium silver alloy), Mg: Al (magnesium aluminum alloy), Au (gold), ITO (indium tin oxide), SnO 2 (tin oxide), ZnO (zinc oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), and the like.
S303:在电致发光单元的形成有透明电极层的一侧形成与至少部分透明电极层接触的第一光耦合输出层,且第一光耦合输出层为导电层。S303: forming a first light coupling output layer in contact with at least a portion of the transparent electrode layer on a side of the electroluminescent unit on which the transparent electrode layer is formed, and the first light coupling output layer is a conductive layer.
例如,在透明电极层上形成第一光耦合输出层包括:在透明电极层远离电致发光单元的一侧蒸镀第一主体材料以及第一n型掺杂材料或者第一p型掺杂材料以形成第一光耦合输出层。本实施例形成的第一光耦合输出层在具有增加光输出效果的同时,由于具有较好的导电特性,可以辅助透明电极层导电,从而降低显示面板的电压降,增加器件的均一性。For example, forming the first light-coupling output layer on the transparent electrode layer includes: vapor-depositing the first host material and the first n-type dopant material or the first p-type dopant material on a side of the transparent electrode layer away from the electroluminescent unit To form a first light coupling output layer. The first optical coupling output layer formed in this embodiment has the effect of increasing the light output, and has better conductive characteristics, can assist the transparent electrode layer to conduct electricity, thereby reducing the voltage drop of the display panel and increasing the uniformity of the device.
例如,第一光耦合输出层的材料可以包括NPB(N,N’-双(1-萘基)-N,N’-二苯基-1,1’-二苯基-4,4’-二胺)、TPD(N,N’-双(3-甲基苯基)-N,N’-二苯基-1,1’-二苯基-4,4’-二胺)或者Alq 3(8羟基喹啉铝)等材料,即,第一光耦合输出层的材料可以选用与空穴传输层或者电子传输层相同的半导体材料,本实施例包括但不限于此。 For example, the material of the first photocoupled output layer may include NPB(N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'- Diamine), TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine) or Alq 3 A material such as (8-hydroxyquinoline aluminum), that is, a material of the first light-coupled output layer may be the same semiconductor material as the hole transport layer or the electron transport layer, and the embodiment includes but is not limited thereto.
例如,第一光耦合输出层可以NPD(N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺)作为主体材料,并利用HAT-CN(11-六氰基-1;12-六氮杂苯并菲)作为掺杂材料,对NPD进行p型掺杂(p-doping)以形成具有较好导电特性的第一光耦合输出层。For example, the first light coupling-out layer may be NPD (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) as a main component Materials, and using HAT-CN (11-hexacyano-1; 12-hexaazabenzophenanthrene) as a doping material, p-doping the NPD to form a better conductive property The first optical coupling output layer.
例如,本实施例不限于掺杂HAT-CN材料,还可采用F4TCNQ(2,3,5,6-四氟-7,7',8,8'-四氰醌-二甲烷)、HAT-CN、MoO 3(三氧化钼)、V 2O 5(五氧化二钒)、WO 3(三氧化钨)等p型掺杂剂。 For example, the present embodiment is not limited to doping HAT-CN materials, and F4TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane), HAT- may also be used. A p-type dopant such as CN, MoO 3 (molybdenum trioxide), V 2 O 5 (vanadium pentoxide), and WO 3 (tungsten trioxide).
例如,第一光耦合输出层还可以Liq(锂喹啉)作为主体材料,并利用Cs(铯)作为掺杂材料,对Liq进行n型掺杂(n-doping)以形成具有较好导电特性的第一光耦合输出层。For example, the first light coupling output layer may further use Liq (lithium quinoline) as a host material, and use Cs (铯) as a doping material to perform n-doping on the Liq to form a good conductive property. The first optical coupling output layer.
例如,本实施例不限于掺杂Cs材料,还可采用Li(锂)、Li 2CO 3(碳酸锂)、Cs 2CO 3(碳酸铯)等n型掺杂剂。 For example, the present embodiment is not limited to a doped Cs material, and an n-type dopant such as Li (lithium), Li 2 CO 3 (lithium carbonate), or Cs 2 CO 3 (cesium carbonate) may also be used.
例如,第一光耦合输出层沿垂直于衬底基板方向的厚度为40-100nm,本实施例包括但不限于此。For example, the thickness of the first light-coupling output layer in the direction perpendicular to the substrate substrate is 40-100 nm, and the embodiment includes but is not limited thereto.
例如,本实施例的一示例提供的制作方法还包括:在第一光耦合输出层远离透明电极层的一侧形成第二光耦合输出层,第二光耦合输出层的折射率小于第一光耦合输出层的折射率以进一步增加光输出。For example, the manufacturing method provided by an example of the embodiment further includes: forming a second light coupling output layer on a side of the first light coupling output layer away from the transparent electrode layer, wherein the second light coupling output layer has a refractive index smaller than the first light The refractive index of the output layer is coupled to further increase the light output.
例如,本示例中,形成第二光耦合输出层可以包括:在第一光耦合输出层远离透明电极层的一侧蒸镀第二主体材料以及第二n型掺杂材料或第二p型掺杂材料以形成第二光耦合输出层,且第二光耦合输出层与部分透明电极层接触。For example, in this example, forming the second light coupling output layer may include: vaporizing the second host material and the second n-type dopant material or the second p-type dopant on a side of the first light coupling output layer away from the transparent electrode layer The impurity material forms a second light coupling output layer, and the second light coupling output layer is in contact with the partial transparent electrode layer.
例如,本示例中,第二光耦合输出层也可以是不进行p型掺杂或者n型掺杂的仅起到增加光输出作用的光耦合输出层,且无需与透明电极层接触。For example, in the present example, the second light-coupled output layer may also be a light-coupled output layer that does not perform p-type doping or n-type doping only to increase light output, and does not need to be in contact with the transparent electrode layer.
例如,本实施例的另一示例提供的制作方法还包括:在第一光耦合输出层与透明电极层之间形成第二光耦合输出层,第二光耦合输出层的折射率大于第一光耦合输出层的折射率以进一步增加光输出。For example, the manufacturing method provided by another example of the embodiment further includes: forming a second light coupling output layer between the first light coupling output layer and the transparent electrode layer, wherein the second light coupling output layer has a refractive index greater than the first light The refractive index of the output layer is coupled to further increase the light output.
例如,本示例中第二光耦合输出层可以为包括第二n型掺杂材料或第二p型掺杂材料的半导体层,也可以为不进行p型掺杂或者n型掺杂的仅起到增加光输出作用的光耦合输出层,本实施例对此不作限制。For example, in this example, the second light-coupled output layer may be a semiconductor layer including a second n-type dopant material or a second p-type dopant material, or may be a layer that does not perform p-type doping or n-type doping. To the optical coupling output layer that increases the light output, this embodiment does not limit this.
例如,在制作完成第一光耦合输出层或者制作完成两层光耦合输出层之后,可以采用紫外封装或者玻璃料封装的方式对器件进行封装。For example, after the first light-coupled output layer is fabricated or the two light-coupled output layers are completed, the device may be packaged in an ultraviolet package or a frit package.
本公开另一实施例提供一种显示装置,包括上述实施例中任意一种显示面板。该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。Another embodiment of the present disclosure provides a display device including any one of the above embodiments. The display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
该显示装置包括的第一光耦合输出层具有较好的导电特性,可以辅助透明电极层导电,以降低透明电极层的厚度,并且降低显示装置中的电压降,增加器件的均一性。The first light-coupled output layer included in the display device has better conductive characteristics, can assist the transparent electrode layer to conduct electricity, reduce the thickness of the transparent electrode layer, and reduce the voltage drop in the display device, thereby increasing the uniformity of the device.
有以下几点需要说明:There are a few points to note:
(1)除非另作定义,本公开实施例以及附图中,同一标号代表同一含义。(1) Unless otherwise defined, the same reference numerals are used to refer to the same meaning
(2)本公开实施例附图中,只涉及到与本公开实施例涉及到的结构,其他结构可参考通常设计。(2) In the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are referred to, and other structures may be referred to the general design.
(3)为了清晰起见,在用于描述本公开的实施例的附图中,层或区域被放大。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。(3) For the sake of clarity, layers or regions are enlarged in the drawings for describing embodiments of the present disclosure. It will be understood that when an element such as a layer, a film, a region or a substrate is referred to as being "on" or "lower" Or there may be intermediate elements.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above is only the specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the disclosure. It should be covered within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be determined by the scope of the claims.
Claims (17)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP18825557.4A EP3675173B1 (en) | 2017-08-25 | 2018-06-08 | Display panel, method for manufacturing same, electroluminescent device and display apparatus |
| JP2018568824A JP7201442B2 (en) | 2017-08-25 | 2018-06-08 | Display panel and its manufacturing method, electroluminescence device and display device |
| US16/313,218 US11251407B2 (en) | 2017-08-25 | 2018-06-08 | Display panel having an optical coupling layer and manufacturing method thereof electroluminescent device and display device |
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| CN201710744039.8 | 2017-08-25 | ||
| CN201710744039.8A CN109427845B (en) | 2017-08-25 | 2017-08-25 | Display panel and manufacturing method thereof, electroluminescent device and display device |
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| WO2019037516A1 true WO2019037516A1 (en) | 2019-02-28 |
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| US (1) | US11251407B2 (en) |
| EP (1) | EP3675173B1 (en) |
| JP (1) | JP7201442B2 (en) |
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| CN110085639A (en) * | 2019-04-23 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | The preparation method and display device of luminescent panel, luminescent panel |
| US11950450B2 (en) | 2019-08-27 | 2024-04-02 | Boe Technology Group Co., Ltd. | Display substrate and method of manufacturing the same and electronic device |
| US11430842B2 (en) | 2019-10-30 | 2022-08-30 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
| CN111682051A (en) * | 2020-06-23 | 2020-09-18 | 昆明京东方显示技术有限公司 | Silicon-based organic electroluminescence display substrate, method for making the same, and display panel |
| CN114975558A (en) * | 2022-05-31 | 2022-08-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method of making the same |
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Also Published As
| Publication number | Publication date |
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| CN109427845A (en) | 2019-03-05 |
| EP3675173B1 (en) | 2024-05-01 |
| EP3675173A1 (en) | 2020-07-01 |
| CN109427845B (en) | 2021-02-09 |
| US20210226170A1 (en) | 2021-07-22 |
| EP3675173A4 (en) | 2021-04-14 |
| JP2020532042A (en) | 2020-11-05 |
| JP7201442B2 (en) | 2023-01-10 |
| US11251407B2 (en) | 2022-02-15 |
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