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WO2019033539A1 - Panneau d'affichage à oled et son procédé de fabrication - Google Patents

Panneau d'affichage à oled et son procédé de fabrication Download PDF

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Publication number
WO2019033539A1
WO2019033539A1 PCT/CN2017/106816 CN2017106816W WO2019033539A1 WO 2019033539 A1 WO2019033539 A1 WO 2019033539A1 CN 2017106816 W CN2017106816 W CN 2017106816W WO 2019033539 A1 WO2019033539 A1 WO 2019033539A1
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WO
WIPO (PCT)
Prior art keywords
layer
common
display panel
pixel
pixel defining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/106816
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English (en)
Chinese (zh)
Inventor
杨杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/575,631 priority Critical patent/US10170526B1/en
Publication of WO2019033539A1 publication Critical patent/WO2019033539A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate

Definitions

  • the present invention relates to the field of flat panel display manufacturing technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • organic light-emitting diode Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • LCD Liquid Crystal Display, liquid crystal display
  • OLED has the advantages of more power saving, thinner, and wide viewing angle, which is unmatched by LCD.
  • people are increasingly demanding the degree of detail, that is, the resolution, but the production of high-quality, high-resolution OLED displays still faces many challenges.
  • FIG. 1 is a structural view of a OLED display panel.
  • the OLED display panel includes a thin film transistor layer 101 and an anode layer and a pixel defining layer 102 formed on the TFT substrate.
  • the working principle of the OLED display panel is that under the action of an electric field between the anode and the cathode, holes are transmitted to the luminescent layer through the first common layer 103, electrons are transmitted to the luminescent layer through the second common layer 104, and holes and electrons are in the luminescent layer. Within the composite and then emit light.
  • the OLED display panel usually has a mixture of three primary colors of R, G, and B to realize different color display effects. Therefore, one pixel of the OLED display panel usually includes three light-emitting units of R, G, and B. In actual use, we require that each of the R, G, and B illumination units of each pixel can be individually controlled by the drive circuit.
  • the number of light-emitting units per unit area also increases, resulting in a decreasing distance between the light-emitting units.
  • the light-emitting layers of the three light-emitting units of R, G, and B are different, and the starting voltages are also different.
  • the leakage luminescence phenomenon is generally more obvious under low current conditions, and this phenomenon will reduce the display effect of the OLED display panel.
  • the present invention provides an OLED display panel to solve problems such as leakage luminescence caused by charge sharing in adjacent sub-pixels.
  • the invention provides an OLED display panel, and the display panel comprises:
  • a pixel defining layer formed on the thin film transistor layer, the pixel defining layer including a sub-pixel opening in one-to-one correspondence with the anode;
  • barrier layer disposed on the pixel defining layer between any two adjacent anodes, the barrier layer for blocking the charge released by one of the adjacent two anodes To a region of the cathode layer corresponding to the other of the two adjacent anodes,
  • the height of the barrier layer in a direction perpendicular to a plane in which the OLED display panel is located is greater than a sum of the first common layer, the second common layer, and the cathode layer.
  • the OLED display panel further includes:
  • a first common layer formed on the pixel defining layer, the first common layer completely covering the pixel defining layer and the anode layer;
  • a light emitting layer is formed on the first common layer, the light emitting layer includes at least two light emitting units corresponding to the subpixel openings;
  • a cathode layer is formed on the second common layer.
  • the barrier layer includes two parallel first short sides and a first long side away from the sub-pixel layer;
  • the length of the first long side is smaller than the width of the pixel defining layer between adjacent pixels.
  • the first common layer includes a hole injection layer and a hole transport layer
  • the second common layer includes an electron injection layer and an electron transport layer
  • the present invention provides a method of fabricating an OLED display panel, the method comprising:
  • Step S40 forming a pixel definition layer on the first substrate
  • Step S50 forming a sub-pixel opening corresponding to the anode one by one on the pixel defining layer
  • Step S60 forming a barrier layer on the pixel defining layer between any two adjacent anodes
  • Step S70 forming a first common layer on the pixel definition layer
  • Step S80 forming at least two light emitting units corresponding to the sub-pixel openings on the first common layer
  • Step S90 sequentially forming a second common layer and a cathode layer on the first common layer.
  • the method before the step S40, the method further includes:
  • Step S10 forming a thin film transistor layer on the first substrate
  • Step S20 forming an anode layer on the thin film transistor layer
  • Step S30 forming the anode layer into at least two anodes arranged in an array.
  • the barrier layer is configured to block charges released by one of the adjacent two anodes from entering into the cathode layer and the other of the two adjacent anodes Corresponding area;
  • the height of the barrier layer in a direction perpendicular to a plane in which the OLED display panel is located is greater than a sum of the first common layer, the second common layer, and the cathode layer.
  • the barrier layer includes two parallel first short sides and a first long side away from the sub-pixel layer;
  • the length of the first long side is smaller than the width of the pixel defining layer between adjacent pixels.
  • the first common layer includes a hole injection layer and a hole transport layer
  • the second common layer includes an electron injection layer and an electron transport layer
  • the present invention also provides an OLED display panel, the display panel comprising:
  • a pixel defining layer formed on the thin film transistor layer, the pixel defining layer including a sub-pixel opening in one-to-one correspondence with the anode;
  • barrier layer disposed on the pixel defining layer between any two adjacent anodes, the barrier layer for blocking the charge released by one of the adjacent two anodes To a region of the cathode layer corresponding to the other of the two adjacent anodes.
  • the OLED display panel further includes:
  • a first common layer formed on the pixel defining layer, the first common layer completely covering the pixel defining layer and the anode layer;
  • a light emitting layer is formed on the first common layer, the light emitting layer includes at least two light emitting units corresponding to the subpixel openings;
  • a cathode layer is formed on the second common layer.
  • the barrier layer includes two parallel first short sides and a first long side away from the sub-pixel layer;
  • the length of the first long side is smaller than the width of the pixel defining layer between adjacent pixels.
  • the first common layer includes a hole injection layer and a hole transport layer
  • the second common layer includes an electron injection layer and an electron transport layer
  • the present invention provides a barrier layer on the pixel defining layer between any two adjacent pixels to block one of the adjacent two anodes
  • the charge released by the person can enter the light-emitting unit corresponding to the other of the two adjacent anodes through the first common layer, thereby eliminating leakage luminescence and improving the display effect of the OLED display panel.
  • FIG. 1 is a structural view of a film layer of an OLED display panel in the prior art
  • FIG. 2 is a structural diagram of a film layer of an OLED display panel according to a preferred embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of a barrier layer in a film layer structure of an OLED display panel according to a preferred embodiment of the present invention
  • FIG. 4 is a flow chart of a method for fabricating an OLED display panel according to the present invention.
  • FIG. 5 is a process diagram of a method for fabricating an OLED display panel according to a preferred embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a barrier layer in a method of fabricating an OLED display panel according to a preferred embodiment of the present invention.
  • the present invention is directed to the existing OLED display panel, because the spacing between the light emitting units is small, and in the case of low current, the charge released by one of the two adjacent anodes passes through the first common
  • This embodiment can solve the drawback that the layer can enter the light-emitting unit corresponding to the other of the two adjacent anodes, and the adjacent light-emitting unit emits light to cause technical problems such as impure illumination.
  • the display panel includes a thin film transistor layer 201, an anode layer, a pixel defining layer 202, a first common layer 203, a light emitting layer, and a second common layer 204.
  • the anode layer is formed on the thin film transistor layer 201, the anode layer includes at least two anodes arranged in an array, such as a first anode 207 and a second anode 208 as shown in FIG. 2; the anode layer It is mainly used to provide holes for absorbing electrons, and the anode layer is transparent to allow the emitted light to pass.
  • the pixel defining layer 202 is formed on the thin film transistor layer 201, and the pixel defining layer 202 includes a sub-pixel opening corresponding to the anode;
  • Each of the sub-pixels is any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and sub-pixels corresponding to three adjacent sub-pixels have different colors.
  • the first common layer 203 is formed on the pixel defining layer 202, and the first common layer 203 completely covers the pixel defining layer 202 and the anode layer;
  • the first common layer 203 may be composed of one layer of material or two or more layers of materials.
  • the first common layer 203 includes a hole injection layer and hole transport. a layer, the hole injection layer and the hole transport layer are sequentially stacked in a direction away from the anode, and the hole injection layer and the hole transport layer have similar functions, and may be collectively referred to as hole transport. Functional layer.
  • the light emitting layer is formed on the first common layer 203, and the light emitting layer includes at least two light emitting units corresponding to the sub pixel openings, as shown in FIG. 2, the first light emitting unit 209 and the second light emitting unit. 210;
  • the luminescent layer is an organic semiconductor having a special energy band structure, and after absorbing electrons migrated from the anode, a photon of a certain wavelength is emitted, and these photons enter our eyes as the color we see.
  • the second common layer 204 is formed on the first common layer 203, and the second common layer 204 completely covers the light emitting layer and the first common layer 203;
  • the second common layer 204 may be composed of one layer of material or two or more layers of materials.
  • the second common layer 204 includes an electron injection layer and an electron transport layer.
  • the electron injecting layer and the electron transporting layer are sequentially stacked in a direction away from the base layer, and the electron injecting layer and the electron transporting layer have similar functions, and may be collectively referred to as an electron transporting functional layer.
  • a cathode layer 205 is formed on the second common layer 204, which is typically an alloy of low work function that produces electrons at a given voltage.
  • a barrier layer 206 disposed on the pixel defining layer 202 between any two adjacent anodes, the barrier layer 206 for blocking one of the adjacent two anodes
  • the released charge enters a region of the cathode layer 205 corresponding to the other of the two adjacent anodes;
  • the cross section of the barrier layer 206 is an inverted trapezoid, and the height in a direction perpendicular to a plane in which the OLED display panel is located is larger than the first common layer 203, the second common layer 204, and the cathode layer 205.
  • the barrier layer 206 includes two parallel first short sides and a first long side away from the sub-pixel layer, the length of the first long side being smaller than the pixel definition between adjacent pixels The width of layer 202;
  • the length of the two parallel first short sides is b
  • the length of the first long side away from the sub-pixel layer is a
  • the width of the pixel defining layer 202 is c.
  • the length relationship of each side is: c>a>b
  • the height of the partition layer 206 is d
  • the height d of the partition layer 206 is Greater than the sum of the thicknesses of the first common layer 203, the second common layer 204, and the cathode, preferably, the height of the barrier layer 206 is d>1 um;
  • the material of the barrier layer 206 is an organic material or an inorganic material, preferably, such as silicon nitride or silicon oxide; in addition, the material of the barrier layer 206 may also be the same material as the pixel defining layer 202.
  • electrons and holes are respectively injected from the cathode and anode injection layers to the electron and hole transport layers, and electrons and holes migrate to the light-emitting layer through the electron and hole transport layers, respectively, and meet in the light-emitting layer.
  • electrons enter a cavity they release excess energy in the form of light;
  • the lighting voltages of the three light-emitting units R, G, and B are R>G>B;
  • the barrier layer 206 is disposed to block the charge released by one of the two adjacent anodes from entering the region of the cathode layer 205 corresponding to the other of the two adjacent anodes The leakage luminescence phenomenon is eliminated, and the display effect of the OLED display panel is improved.
  • FIG. 4 is a flow chart of a method for fabricating an OLED display panel according to the present invention
  • FIG. 5 is a process completion diagram of a method for fabricating an OLED display panel according to the present invention. The method includes:
  • Step S10 forming a thin film transistor layer on the first substrate
  • a substrate is provided, and a gate and a gate line of the thin film transistor are formed on the surface of the substrate by using a first mask process; and a gate insulating layer of the thin film transistor is formed on the surface of the substrate by using a second mask process, An active layer, a source electrode, a drain electrode, and a passivation layer.
  • Step S20 forming an anode layer on the thin film transistor layer
  • the anode layer is a transparent metal electrode, preferably, such as indium tin oxide; the anode layer is mainly used to provide holes for absorbing electrons, and The anode layer is transparent, allowing the emitted light to pass through.
  • Step S30 forming the anode layer into at least two anodes arranged in an array
  • Coating a photoresist on a surface of the anode layer, exposing and developing the photoresist, patterning the photoresist, and dividing the anode layer into at least two arrays by an etching process The anode, specifically, the first anode 307 and the second anode 308 as shown in FIG.
  • Step S40 forming a pixel definition layer on the first substrate
  • Step S50 forming a sub-pixel opening corresponding to the anode one by one on the pixel defining layer
  • each of the sub-pixels is any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and sub-pixels corresponding to three adjacent sub-pixels have different colors.
  • Step S60 forming a barrier layer on the pixel defining layer between any two adjacent anodes
  • the barrier layer 306 is disposed on the pixel defining layer 302 between any two adjacent anodes, and the barrier layer 306 is used to block the charge released by one of the adjacent two anodes. a region corresponding to the other of the two adjacent anodes in the cathode layer 305;
  • the cross section of the barrier layer 306 is an inverted trapezoid, and the height in a direction perpendicular to a plane in which the OLED display panel is located is larger than the first common layer 303, the second common layer 304, and the cathode layer 305.
  • the barrier layer 306 includes two parallel first short sides and a first long side away from the sub-pixel layer, the length of the first long side being smaller than the pixel definition between adjacent pixels The width of layer 302;
  • the length of the two parallel first short sides is b, and the length of the first long side away from the sub-pixel layer is a, and the pixel defining layer 302 is The width is c.
  • the length relationship of each side is: c>a>b; in addition, the height of the partition layer 306 is d, and the partition layer 306 is used for better partitioning effect.
  • the height d is greater than the sum of the thicknesses of the first common layer 303, the second common layer 304, and the cathode.
  • the height of the barrier layer 306 is d>1 um;
  • the material of the barrier layer 306 is an organic material or an inorganic material, preferably, such as silicon nitride or silicon oxide; in addition, the material of the barrier layer 306 may also be the same material as the pixel defining layer 302.
  • Step S70 forming a first common layer on the pixel definition layer
  • the first common layer 303 is formed on the pixel defining layer 302, and the first common layer 303 completely covers the pixel defining layer 302 and the anode layer;
  • the first common layer 303 may be composed of one layer of material or two or more layers of materials.
  • the first common layer 303 includes a hole injection layer and hole transport. a layer, the hole injection layer and the hole transport layer are sequentially stacked in a direction away from the anode, and the hole injection layer and the hole transport layer have similar functions, and may be collectively referred to as hole transport. Functional layer.
  • Step S80 forming at least two light emitting units corresponding to the sub-pixel openings on the first common layer
  • the light emitting layer is formed on the first common layer 303, and the light emitting layer includes at least two light emitting units corresponding to the subpixel openings, as shown in FIG. 2, the first light emitting unit 309 and the second light emitting unit. 310;
  • the luminescent layer is an organic semiconductor having a special energy band structure, and after absorbing electrons migrated from the anode, a photon of a certain wavelength is emitted, and these photons enter our eyes as the color we see.
  • Step S90 sequentially forming a second common layer and a cathode layer on the first common layer
  • the second common layer 304 may be composed of one layer of material or two or more layers of materials.
  • the second common layer 304 includes an electron injection layer and an electron transport layer.
  • the electron injection layer and the electron transport layer are sequentially stacked in a direction away from the base layer, and the electron injection layer and the electron transport layer have similar functions, and may be collectively referred to as an electron transport function layer;
  • the cathode layer 305 is deposited on the second common layer 304, which is typically an alloy of low work function that produces electrons at a given voltage.
  • electrons and holes are respectively injected from the cathode and the anode injection layer to the electron and hole transport layer, and electrons and holes migrate to the light-emitting layer through the electron and hole transport layers, respectively, and emit light.
  • the layers meet, when electrons enter the cavity, they will release excess energy in the form of light;
  • the lighting voltages of the three light-emitting units R, G, and B are R>G>B;
  • the present invention provides an OLED display panel and a method of fabricating the same, the display panel comprising: a thin film transistor layer, an anode layer, a pixel defining layer, a first common layer, a light emitting layer, a second common layer, a cathode layer, and a barrier layer;
  • the barrier layer is disposed on the pixel defining layer between any two adjacent anodes, and the barrier layer blocks the charge released by one of the adjacent two anodes from entering the cathode layer
  • the area corresponding to the other of the two adjacent anodes eliminates the leakage luminescence phenomenon and improves the display effect of the OLED display panel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un panneau d'affichage à OLED et son procédé de fabrication, le panneau d'affichage comprenant : une couche de transistor en couches minces (201), une couche d'anode, une couche de définition de pixels (202), une couche de cathode (205) et une couche isolante (206). La couche isolante (206) est disposée sur la couche de définition de pixels (202) entre deux anodes adjacentes quelconques (207, 208), et sert à bloquer l'entrée d'une charge libérée par l'une des deux anodes adjacentes (207, 208) dans une zone correspondante dans la couche de cathode (205) de l'autre anode parmi les deux anodes adjacentes (207, 208).
PCT/CN2017/106816 2017-08-16 2017-10-19 Panneau d'affichage à oled et son procédé de fabrication Ceased WO2019033539A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/575,631 US10170526B1 (en) 2017-08-16 2017-10-19 Organic light emitting diode display panel and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710699927.2 2017-08-16
CN201710699927.2A CN107369702B (zh) 2017-08-16 2017-08-16 一种oled显示面板及其制作方法

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WO2019033539A1 true WO2019033539A1 (fr) 2019-02-21

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Cited By (2)

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EP4020609A4 (fr) * 2019-08-23 2022-08-10 BOE Technology Group Co., Ltd. Substrat d'affichage et son procédé de fabrication
CN115411086A (zh) * 2022-10-11 2022-11-29 武汉天马微电子有限公司 一种显示面板和显示装置

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CN109103217B (zh) 2018-07-30 2021-06-22 武汉华星光电半导体显示技术有限公司 一种oled面板以及显示装置
CN110767690B (zh) * 2018-10-31 2023-09-22 云谷（固安）科技有限公司 显示面板、显示屏、制备显示面板的方法和显示终端
CN110212008B (zh) * 2019-06-24 2021-07-23 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法
EP4020608A4 (fr) * 2019-08-23 2022-08-10 Boe Technology Group Co., Ltd. Substrat d'affichage et son procédé de fabrication
CN111192904A (zh) * 2020-01-06 2020-05-22 武汉华星光电半导体显示技术有限公司 Oled显示面板
CN111276520A (zh) * 2020-02-10 2020-06-12 武汉华星光电半导体显示技术有限公司 Oled显示面板
CN113644211B (zh) * 2021-08-12 2023-10-31 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
CN114188495B (zh) * 2021-12-10 2024-08-20 惠州华星光电显示有限公司 显示面板及其制备方法
CN115000321A (zh) * 2022-05-17 2022-09-02 武汉华星光电技术有限公司 显示面板及显示终端
CN115000323B (zh) * 2022-05-30 2025-07-18 湖北长江新型显示产业创新中心有限公司 显示面板及其制备方法和显示装置

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US11539017B2 (en) 2019-08-23 2022-12-27 Boe Technology Group Co., Ltd. Display substrate having spacer for spacing apart carrier injection layer portions of two adjacent sub-pixels, and manufacturing method thereof
CN115411086A (zh) * 2022-10-11 2022-11-29 武汉天马微电子有限公司 一种显示面板和显示装置

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CN107369702B (zh) 2020-03-17

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