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WO2019019316A1 - 一种显示面板、阵列基板及其制造方法 - Google Patents

一种显示面板、阵列基板及其制造方法 Download PDF

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Publication number
WO2019019316A1
WO2019019316A1 PCT/CN2017/102625 CN2017102625W WO2019019316A1 WO 2019019316 A1 WO2019019316 A1 WO 2019019316A1 CN 2017102625 W CN2017102625 W CN 2017102625W WO 2019019316 A1 WO2019019316 A1 WO 2019019316A1
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Prior art keywords
layer
color resist
mask
disposed
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English (en)
French (fr)
Inventor
贺晖
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/577,207 priority Critical patent/US10466547B2/en
Publication of WO2019019316A1 publication Critical patent/WO2019019316A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/52—RGB geometrical arrangements

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel, an array substrate, and a method of fabricating the same.
  • the liquid crystal display panel generally comprises a color film substrate, an array substrate and liquid crystal filled between the color film substrate and the array substrate to form a liquid crystal cell, wherein the color film substrate is used for realizing display of a color picture.
  • COA Color-filter On Array
  • COA technology is an integrated technology for directly fabricating a color filter layer on an array substrate.
  • the prior art COA substrate fabrication includes M1 (gate layer)-GI-AS (semiconductor layer)-M2 (source) And drain) - PV1 (protective layer) - R / G / B (color resist layer) - PV2 (protective layer) - ITO (pixel electrode), and color film substrate also BM / PS (black matrix and spacer layer)
  • M1 gate layer
  • GI-AS semiconductor layer
  • M2 source
  • drain PV1
  • R / G / B color resist layer
  • PV2 protection layer
  • ITO pixel electrode
  • color film substrate also BM / PS (black matrix and spacer layer)
  • the two processes have a total of 9-10 mask yellow light processes.
  • the new technology BPS black matrix and spacer layer
  • BM black matrix and spacer layer
  • BM black matrix and spacer layer
  • PFA Polyfluoroalkoxy, PTFE
  • Ethylene transparent photoresist instead of PV2, also requires M1 (gate layer) - GI-AS (semiconductor layer) - M2 (source and drain) - PV1 (protective layer) - R / G / B (color resist layer )-PV2 (protective layer)-ITO (pixel electrode) BPS
  • M1 gate layer
  • GI-AS semiconductor layer
  • M2 source and drain
  • PV1 protection layer
  • R / G / B color resist layer
  • PV2 protection layer
  • ITO pixel electrode
  • the prior art color filter substrate does not contain a white filter film.
  • some researchers have proposed some ways to increase the white filter film, and the white filter film can increase the brightness and color saturation of the display. Compared with the prior art, the display effect is improved.
  • the process of fabricating the white filter film by these schemes generally refers to the above-mentioned prior art, that is, by adopting a yellow light process, a W is added. Mask production, the process is cumbersome.
  • the technical problem to be solved by the present invention is to provide a display panel, an array substrate, and a manufacturing method thereof, which can increase transmittance and brightness while simplifying the process.
  • a technical solution adopted by the present invention is to provide a method for manufacturing an array substrate, comprising: providing a substrate; disposing a thin film transistor on the substrate; and setting R, G, and B on the thin film transistor; a W color resist layer; a flat layer is disposed on the R, G, B, and W color resist layers, and a first protective layer, a spacer layer, and an opening having different thicknesses are formed by a multi-step mask process.
  • an array substrate including: a substrate; a thin film transistor disposed on the substrate; R, G, B, and W color resist layers disposed on the film a flat layer disposed on the color resist layer, wherein the flat layer forms a first protective layer, a spacer layer, and an opening having different thicknesses by a multi-step mask process.
  • a display panel including an array substrate and a color filter substrate disposed opposite to each other, and a liquid crystal layer disposed between the array substrate and the color filter substrate, wherein
  • the array substrate comprises a substrate; the thin film transistor is disposed on the substrate; the R, G, B and W color resist layers are disposed on the thin film transistor; the flat layer is disposed on the color resist layer, wherein the flat layer passes through the multi-step mask
  • the process forms a first protective layer, a spacer layer, and an opening having different thicknesses.
  • the present invention provides a display panel, an array substrate, and a manufacturing method thereof.
  • the manufacturing method includes: first providing a substrate, then providing a thin film transistor on the substrate, and then forming a thin film transistor on the substrate.
  • R, G, B, and W color resist layers are disposed on the transistor, and finally a flat layer is disposed on the R, G, B, and W color resist layers, and a first protective layer and a spacer layer having different thicknesses are formed by a multi-step mask process. Open the hole. Therefore, the present invention forms the first protective layer, the spacer layer and the opening through a process, thereby saving the process, thereby simplifying the process.
  • the present invention also produces a W color resist layer, thereby increasing the transmittance. And brightness.
  • FIG. 1 is a schematic flow chart of a method for manufacturing an array substrate according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing a process of the manufacturing method corresponding to FIG. 1;
  • FIG. 3 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional structural view of the array substrate shown in FIG. 3 along a line AA' in a broken line;
  • Figure 5 is a cross-sectional structural view of the array substrate shown in Figure 3 along the BB' direction of the broken line;
  • FIG. 6 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
  • FIG. 1 is a schematic flow chart of a method for manufacturing an array substrate according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a process process corresponding to the manufacturing method shown in FIG.
  • the manufacturing method of the array substrate of this embodiment includes the following steps:
  • Step S1 providing a substrate 11.
  • the substrate 11 may be a glass substrate, and the glass substrate may be further cleaned, dried, or the like.
  • Step S2 The thin film transistor 12 is provided on the substrate 11.
  • the gate layer 121, the gate insulating layer 122, the semiconductor layer 123, the source layer 124, the drain layer 125, and the second protective layer 126 are sequentially stacked on the substrate 11.
  • the common electrode 127 is further provided. That is, the common electrode 127 is disposed in the same layer as the gate layer 121.
  • the source layer 124 and the drain layer 125 are respectively disposed at both ends of the semiconductor layer 123.
  • the semiconductor layer 123 may be a polysilicon semiconductor material.
  • the gate layer 121, the source layer 124, and the drain layer 125 may be made of a metal material.
  • a buffer layer may be disposed between the substrate 11 and the gate layer 121 to prevent moisture or the like from entering the gate layer 121 from the substrate 11 side.
  • Step S3 R, G, B, and W color resist layers 13-16 are disposed on the thin film transistor 12.
  • R (Red, red), G (Green, green), B (Blue, blue), and W (White, white) color resist layers 13-16 are sequentially disposed on the second protective layer 126.
  • the R, G, B, and W color resist layers 13-16 are located in the same layer, and at least two of the R, G, and B color resist layers 13-16 are formed black by a halftone mask between the two color resist layers.
  • a film of an R color resist layer is first plated on the second protective layer 126, which is referred to as an R color resist film. And complete patterning is performed at a position where the R color resist layer 13 is required to form a desired R color resist layer 13, while patterning is performed using a halftone mask at a position where the black matrix layer 19 needs to be formed to form a half.
  • the R color resist film 131 and the half R color resist film 131 have a thickness of 1/2 of the thickness of the R color resist layer 13, and are normally exposed at other positions (including the W color resist layer 16) to remove excess R color resist. membrane.
  • complete patterning is for "patterning using a halftone mask”. Specifically, “complete patterning” refers to patterning in which the thickness of the film of the R color resist layer 13 is completely retained in the normal photolithography process, and “patterning using a halftone mask” means that it can be in the thickness direction. The patterning of the film of the partial R color resist layer 13 is removed.
  • the G color resist layer 14 When the G color resist layer 14 is formed, first, a film of the G color resist layer 14 is formed on the R color resist layer 13 and the half R color resist film 131, which is called a G color resist film, and then a G color resist layer 14 is required to be provided. The position is completely patterned to form the desired G color resist layer 14. Normal exposure is performed at other locations (including the W color resist layer 16) to remove excess G color resist film.
  • the thickness of the G color resist layer 14 is the same as the thickness of the R color resist layer 13.
  • the principle is the same as that when the R color resist layer 13 is formed. That is, first, a film of a B color resist layer is plated on the R color resist layer 13, the half R color resist film 131, and the G color resist layer 14, and is called a B color resist film. And complete patterning is performed at a position where the B color resist layer 15 is required to be formed to form a desired B color resist layer 15, while being used at a position where the black matrix layer 19 is required to be formed (i.e., the position of the half R resist film 131). The halftone mask is patterned to form a half B color resist film 151 having a thickness 1/2 of the thickness of the B color resist layer 15, and is performed at other positions (including the W color resist layer 16). Normal exposure to remove excess B color resist film. The thickness of the B color resist layer 15 is the same as that of the R color resist layer 13 and the G color resist layer 14.
  • the half-R color resist film 131 and the half-B color resist film 151 are respectively obtained by patterning two halftone mask patterns when the R color resist layer 13 and the B color resist layer 15 are formed, and finally the two half colors
  • the resist film is superposed to form the black matrix layer 19, and its thickness is the same as that of the R, G, and B color resist layers, avoiding the height difference.
  • the above is exemplified by laminating half of the color resist film of the R color resist layer 13 and the color resist film of the B color resist layer 15 (i.e., the half R color resist film 131 and the half B color resist film 151) to form the black matrix layer 19.
  • half of the color resist film of the R color resist layer 13 and the color resist film of the G color resist layer 14 or the color resist film of the G color resist layer 14 and the half of the color resist film of the B color resist layer 15 may be performed.
  • the black matrix layer 19 is superimposed or a third of the respective color resist films of the R, G, and B color resist layers 13-15 are superposed to form a black matrix layer 19. It should be understood that one half of the color resist film and one third of the color resist film refer to one-half and one-third of the thickness of the color resist film.
  • Step S4 A flat layer 17 is provided on the R, G, B, and W color resist layers 13-16, and a first protective layer 171, a spacer layer 172, and an opening 173 having different thicknesses are formed by a multi-step mask process. Since the W color resist layer 16 is in an open state, the flat layer 17 is directly filled into the W color resist layer 16.
  • the flat layer 17 may be a PFA transparent photoresist material, so it does not affect the light transmission effect of the W color resist layer 16.
  • the opening 173 exposes the source layer 124 or the drain layer 125.
  • the pixel electrode 110 may be disposed on the flat layer 17 and electrically connected to the drain layer 125 or the source layer 124 through the opening 173.
  • the pixel electrode 110 and the drain layer 125 are electrically connected.
  • Other embodiments may provide for the pixel electrode 18 to be electrically coupled to the source layer 124.
  • the spacer layer 172 includes a main spacer layer 174. This step is specifically as follows:
  • a mask 18 is provided.
  • the first region 181, the second region 182, and the third region 183 of the mask 18 have a first light transmittance n1, a second light transmittance n2, and a third light transmittance n3, respectively.
  • the flat layer 17 is patterned by the mask 18 to form first protective layers 171, main spacer layers 174, and openings 173 of different thicknesses in respective regions.
  • the spacer layer 172 further includes a secondary spacer layer 175, and the fourth region 184 of the mask panel 18 has a fourth transmittance n4.
  • This step may further form the planarization layer 17 further forming a thickness different from the first protective layer 171, the main spacer layer 174, and the opening 173 at a position corresponding to the fourth region 184 when the flat layer 17 is patterned by the mask 18.
  • the PFA material of the flat layer 17 may be a positive or negative photoresist material. If it is a negative PFA material, the first protective layer 171 and the W photoresist layer 16 are fabricated using a light transmittance of 30% to 50%, that is, the light transmittance n1 of the first region 181 of the mask 18 is 30%. --50%.
  • the main spacer layer 174 is a full transmissive region, and the light transmittance is 100%, that is, the light transmittance n2 of the second region 182 of the mask 18 is 100%.
  • the auxiliary spacer layer 175 is made of a light transmittance of 50%-80%, that is, the light transmittance n4 of the fourth region 184 of the mask 18 is 50%--80%.
  • the opening 173 is an opaque region, that is, the third region 183 of the mask 18 has a light transmittance n3 of zero.
  • the first protective layer 171 and the W photoresist layer 16 are fabricated using a light transmittance of 50%-80%, that is, the light transmittance n1 of the first region 181 of the mask 18 is 50%--80. %.
  • the opening 173 is a full-transmission region, and the light transmittance is 100%, that is, the light transmittance n3 of the third region 183 of the mask 18 is 100%.
  • the main spacer layer 174 is an opaque region, that is, the light transmittance n2 of the second region 182 of the mask 18 is zero.
  • the auxiliary spacer layer 175 is made of a light transmittance of 30% to 50%. That is, the light transmittance n4 of the fourth region 184 of the mask 18 is 30% to 50%.
  • the PFA material is not limited as long as it is a transparent photoresist material.
  • the first protective layer 171, the spacer layer 172, and the opening 173 are formed through a process, which saves the process, thereby achieving the purpose of simplifying the process.
  • the present invention also produces the W color resist layer 16, thereby Can increase transmittance and brightness.
  • the present invention also provides an array substrate formed by the above-described manufacturing method. Please refer to FIG. 3 to FIG. 5 for details.
  • the array substrate 10 of the present invention includes a substrate 11, a thin film transistor 12, R, G, B, and a W color resist layer 13-16, and a flat layer 17.
  • the thin film transistor 12 is disposed on the substrate 11.
  • the thin film transistor 12 includes a gate layer 121, a gate insulating layer 122, a semiconductor layer 123, a source layer 124 and a drain layer 125, and a second protective layer 126 which are sequentially stacked. Further, a common electrode layer 127 disposed in the same layer as the gate layer 121 is further included.
  • R, G, B, and W color resist layers 13-16 are disposed on the thin film transistor 12. More specifically, the R, G, B, and W color resist layers 13-16 are sequentially disposed on the second protective layer 126, and the R, G, B, and W color resist layers 13-16 are located in the same layer.
  • the array substrate 10 further includes a black matrix layer 19 disposed between the two color resist layers, and the black matrix layer 19 is at least two of the R, G, and B color resist layers 13-15 through the halftone mask The law is formed. The specific principles are as described above and will not be described here.
  • the flat layer 17 is disposed on the R, G, B, and W color resist layers 13-16 and the black matrix layer 19, wherein the flat layer 17 forms the first protective layer 171, the spacer layer 172 having different thicknesses by a multi-step mask process, and Opening 173.
  • the opening 173 exposes the source layer 124 or the drain layer 125.
  • the array substrate 10 further includes a pixel electrode 110 disposed on the first protective layer 171 and electrically connected to the drain layer 125 through the opening 173. In other embodiments, the pixel electrode 110 can also be electrically connected to the source layer 124.
  • the spacer layer 172 includes a main spacer layer 174.
  • the first protective layer 171, the main spacer layer 174 and the opening 173 of different thicknesses are formed by patterning the flat layer 17 through a mask, the first region, the second region and the third region of the mask Each has a first light transmittance, a second light transmittance, and a third light transmittance.
  • the structure of the specific mask is as described above, and will not be described herein.
  • the spacer layer 172 further includes a secondary spacer layer 175 having a thickness different from that of the first protective layer 171, the main spacer layer 174, and the opening 173.
  • the auxiliary spacer layer 175 is patterned by the masking layer 171. Formed, the fourth region of the mask has a fourth transmittance.
  • the specific first protective layer 171, the main spacer layer 174, the auxiliary spacer layer 175, and the opening 173 are disposed as described above, and are not described herein again.
  • the invention also provides a display panel. Please refer to Figure 6.
  • the display panel 40 includes an array substrate 41 and a color filter substrate 42 disposed opposite to each other, and a liquid crystal layer 43 disposed between the array substrate 41 and the color filter substrate 42.
  • the array substrate 41 includes the array substrate 10, and details are not described herein.
  • the present invention forms the first protective layer, the spacer layer and the opening through a process, thereby saving the process, thereby simplifying the process.
  • the present invention also produces a W color resist layer, thereby increasing Transmittance and brightness.

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Abstract

一种显示面板、阵列基板及其制造方法。制造方法包括：提供一基板（11）；在基板（11）上设置薄膜晶体管（12）；在薄膜晶体管（12）上设置R、G、B以及W色阻层（13-16）；在R、G、B以及W色阻层（13-16）上设置平坦层（17），并通过多段差掩膜工艺形成厚度不同的第一保护层（171）、间隔层（172）以及开孔（173）。通过一道工序形成了第一保护层（171）、间隔层（172）以及开孔（173），节省了制程工序，从而达到简化制程的目的，另外，还制作了W色阻层（16），从而可以增加透过率和亮度。

Description

一种显示面板、阵列基板及其制造方法
【技术领域】
本发明涉及显示技术领域，尤其是涉及一种显示面板、阵列基板及其制造方法。
【背景技术】
液晶显示面板通常包括彩膜基板、阵列基板以及填充于彩膜基板和阵列基板之间的液晶，形成液晶盒，其中彩膜基板用于实现彩色画面的显示。COA(Color-filter on Array)技术是一种将彩色滤光层直接制作在阵列基板上的一种集成技术，现有技术的COA基板制作包括M1(栅极层)-GI-AS（半导体层）-M2（源极和漏极）-PV1（保护层）-R/G/B（色阻层）-PV2（保护层）-ITO（像素电极），且彩膜基板还有BM/PS（黑矩阵及间隔层）两道制程共9-10道mask黄光制程，新技术BPS（黑矩阵及间隔层）利用将BM（黑矩阵）和PS（间隔层）合成一道节省一道BM制程且用PFA（Polyfluoroalkoxy，四氟乙烯）透明光阻材料代替PV2，也需要M1(栅极层)-GI-AS（半导体层）-M2（源极和漏极）-PV1（保护层）-R/G/B（色阻层）-PV2（保护层）-ITO（像素电极）BPS 8-9道Mask黄光制程，工艺繁琐。
并且，现有技术的彩膜基板不含有白色滤光膜，近年来有些研究人员提出了一些增加白色滤光膜的方案，增加白色滤光膜可以对显示的亮度以及色饱和度进行相关的控制，相对于现有技术改善了显示效果，然而这些方案制作白色滤光膜的工艺一般是参照上述的现有技术，即采用一个黄光制程，则又增加了一道W mask制作，工艺繁琐。
综上所述，现有技术的工艺制程繁琐。
【发明内容】
本发明主要解决的技术问题是提供一种显示面板、阵列基板及其制造方法，能够增加透过率和亮度，同时简化制程。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种阵列基板的制造方法，制造方法包括：提供一基板；在基板上设置薄膜晶体管；在薄膜晶体管上设置R、G、B以及W色阻层；在R、G、B以及W色阻层上设置平坦层，并通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种阵列基板，阵列基板包括：基板；薄膜晶体管，设置在基板上；R、G、B以及W色阻层，设置在薄膜晶体管上；平坦层，设置在色阻层上，其中，平坦层通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种显示面板，显示面板包括相对设置的阵列基板和彩膜基板以及设置在阵列基板和彩膜基板之间的液晶层，其中，阵列基板包括基板；薄膜晶体管，设置在基板上；R、G、B以及W色阻层，设置在薄膜晶体管上；平坦层，设置在色阻层上，其中，平坦层通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。
本发明的有益效果是：区别于现有技术的情况，本发明提供一种显示面板、阵列基板及其制造方法，制造方法包括：首先提供一基板，然后在基板上设置薄膜晶体管，然后在薄膜晶体管上设置R、G、B以及W色阻层，最后在R、G、B以及W色阻层上设置平坦层，并通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。因此，本发明通过一道工序形成了第一保护层、间隔层以及开孔，节省了制程工序，从而达到简化制程的目的，另外，本发明还制作了W色阻层，从而可以增加透过率和亮度。
【附图说明】
图1是本发明实施例提供的一种阵列基板的制造方法的流程示意图；
图2是对应图1所示的制造方法的工艺制程示意图；
图3是本发明实施例提供的一种阵列基板的结构示意图；
图4是图3所示的阵列基板沿虚线AA’方向的剖面结构示意图；
图5是图3所示的阵列基板沿虚线BB’方向的剖面结构示意图；
图6是本发明实施例提供的一种显示面板的结构示意图。
【具体实施方式】
下面将结合本发明实施例的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1和图2，图1是本发明实施例提供的一种阵列基板的制造方法的流程示意图，图2是对应图1所示的制造方法的工艺制程示意图。如图1和图2所示，本实施例的阵列基板的制造方法包括以下步骤：
步骤S1：提供一基板11。
其中，基板11可以为玻璃基板，进一步可以对玻璃基板进行清洗、烘干等操作。
步骤S2：在基板11上设置薄膜晶体管12。
具体的，在基板11上依次层叠设置栅极层121、栅极绝缘层122、半导体层123、源极层124和漏极层125以及第二保护层126。
其中，在设置栅极层121时，进一步设置公共电极127。也就是公共电极127与栅极层121同层设置。源极层124和漏极层125分别设置在半导体层123的两端。半导体层123可以为多晶硅半导体材质。栅极层121、源极层124以及漏极层125可为金属材质。
在其他实施例中，还可以在基板11和栅极层121之间设置一层缓冲层，以防止水汽等从基板11侧进入到栅极层121中。
步骤S3：在薄膜晶体管12上设置R、G、B以及W色阻层13-16。
本步骤中，具体在第二保护层126上依次间隔设置R（Red，红色）、G（Green，绿色）、B（Blue，蓝色）以及W（White，白色）色阻层13-16。R、G、B以及W色阻层13-16位于同一层，同时在两色阻层之间将R、G以及B色阻层13-16中的至少两个通过半色调掩膜法形成黑色矩阵层19。
具体而言，如图2所示，首先在第二保护层126上镀上R色阻层的膜，称为R色阻膜。并在需要设置R色阻层13的位置进行完整的图案化，以形成所需的R色阻层13，同时在需要形成黑色矩阵层19的位置使用半色调掩膜进行图案化，以形成半R色阻膜131，半R色阻膜131的厚度为R色阻层13的厚度的1/2，在其他位置（包括W色阻层16）进行正常的曝光，以去除多余的R色阻膜。
其中，“完整的图案化”是针对“使用半色调掩膜进行图案化”而言的。具体而言，“完整的图案化”是指正常光刻工艺中将R色阻层13的膜的厚度完全保留的图案化，而“使用半色调掩膜进行图案化”是指可以在厚度方向上去除部分R色阻层13的膜的图案化。
在制作G色阻层14时，首先是在R色阻层13和半R色阻膜131上设置G色阻层14的膜，称为G色阻膜，然后在需要设置G色阻层14的位置进行完整的图案化，以形成所需的G色阻层14。在其他位置（包括W色阻层16）进行正常的曝光，以去除多余的G色阻膜。其中，G色阻层14的厚度与R色阻层13的厚度相同。
在制作B色阻层15时，其原理与制作R色阻层13时相同的。即：首先在R色阻层13、半R色阻膜131以及G色阻层14上镀上B色阻层的膜，称为B色阻膜。并在需要设置B色阻层15的位置进行完整的图案化，以形成所需的B色阻层15，同时在需要形成黑色矩阵层19的位置（即半R色阻膜131的位置）使用半色调掩膜进行图案化，以形成半B色阻膜151，半B色阻膜151的厚度为B色阻层15的厚度的1/2，在其他位置（包括W色阻层16）进行正常的曝光，以去除多余的B色阻膜。其中，B色阻层15的厚度与R色阻层13以及G色阻层14的相同。
由此，通过在形成R色阻层13和B色阻层15时的两次半色调掩膜图案化制作分别得到半R色阻膜131和半B色阻膜151，最终该两个半色阻膜叠加形成黑色矩阵层19，且其厚度与R、G以及B色阻层的相同，避免了高度差。
上述举例的是将R色阻层13的色阻膜和B色阻层15的色阻膜的一半（即半R色阻膜131和半B色阻膜151）进行叠加形成黑色矩阵层19。应理解，还可以将R色阻层13的色阻膜和G色阻层14的色阻膜的一半或者G色阻层14的色阻膜和B色阻层15的色阻膜的一半进行叠加形成黑色矩阵层19，或者将R、G以及B色阻层13-15的各色阻膜的三分之一进行叠加形成黑色矩阵层19。应理解，色阻膜的一半和色阻膜的三分之一均是指色阻膜的厚度的二分之一和三分之一。
在本步骤中，由于在制作R、G以及B色阻层13-15时，均对其他位置，包括W色阻层16的位置进行正常曝光，使得W色阻层16为开口状态的结构。
步骤S4：在R、G、B以及W色阻层13-16上设置平坦层17，并通过多段差掩膜工艺形成厚度不同的第一保护层171、间隔层172以及开孔173。由于W色阻层16为开口状态的结构，则平坦层17直接填充到W色阻层16中。平坦层17可为PFA透明光阻材料，因此其不影响W色阻层16的透光作用。
其中，开孔173露出源极层124或漏极层125。进一步的，还可在平坦层17上设置像素电极110，并通过开孔173与漏极层125或源极层124电连接。本实施例可设置像素电极110与漏极层125电连接。其他实施例可设置像素电极18与源极层124电连接。
其中，间隔层172包括主间隔层174。本步骤具体为：
首先提供一掩膜板18，掩膜板18的第一区域181、第二区域182以及第三区域183分别具有第一透光率n1、第二透光率n2以及第三透光率n3。通过掩膜板18对平坦层17进行图案化，以在对应的区域分别形成不同厚度的第一保护层171、主间隔层174以及开孔173。
进一步的，间隔层172还包括辅间隔层175，掩膜板18的第四区域184具有第四透光率n4。本步骤可进一步在通过掩膜板18对平坦层17进行图案化时，平坦层17在对应第四区域184的位置进一步形成厚度不同于第一保护层171、主间隔层174以及开孔173的辅间隔层175。
其中，平坦层17的PFA材料可以为正性亦或负性光阻材料。若为负性PFA材料，第一保护层171和W光阻层16使用透光率30%--50%掩膜制作，即掩膜板18的第一区域181的透光率n1为30%--50%。主间隔层174为全透区域，透光率100%，即掩膜板18的第二区域182的透光率n2为100%。辅间隔层175使用透光率50%--80%掩膜制作，即掩膜板18的第四区域184的透光率n4为50%--80%。开孔173为不透光区域，即掩膜板18的第第三区域183的透光率n3为0。
若正性PFA材料则相反。具体而言，第一保护层171和W光阻层16使用透光率50%--80%掩膜制作，即掩膜板18的第一区域181的透光率n1为50%--80%。开孔173为全透区域，透光率100%，即掩膜板18的第三区域183的透光率n3为100%。主间隔层174为不透光区域，即掩膜板18的第二区域182的透光率n2为0。辅间隔层175采用透光率30%—50%制作。即掩膜板18的第四区域184的透光率n4为30%—50%。
PFA材料不限定，只要透明光阻材料即可。
因此，本实施例通过一道工序形成了第一保护层171、间隔层172以及开孔173，节省了制程工序，从而达到简化制程的目的，另外，本发明还制作了W色阻层16，从而可以增加透过率和亮度。
本发明还提供了一种阵列基板，该阵列基板通过前文所述的制造方法形成，具体请参阅图3-图5。
如图3-图5所示，本发明的阵列基板10包括基板11、薄膜晶体管12、R、G、B以及W色阻层13-16以及平坦层17。
其中，薄膜晶体管12设置在基板11上。薄膜晶体管12包括依次层叠设置的栅极层121、栅极绝缘层122、半导体层123、源极层124和漏极层125以及第二保护层126。进一步还包括与栅极层121同层设置的公共电极层127。
R、G、B以及W色阻层13-16设置在薄膜晶体管12上。更具体的，R、G、B以及W色阻层13-16依次间隔设置在第二保护层126上，且R、G、B以及W色阻层13-16位于同一层。
阵列基板10还包括黑色矩阵层19，黑色矩阵层19设置在两色阻层之间，并且黑色矩阵层19是R、G以及B色阻层13-15中的至少两个通过半色调掩膜法形成。具体原理如前文所述，在此不再赘述。
平坦层17设置在R、G、B以及W色阻层13-16和黑色矩阵层19上，其中，平坦层17通过多段差掩膜工艺形成厚度不同的第一保护层171、间隔层172以及开孔173。其中，开孔173露出源极层124或漏极层125。阵列基板10还包括像素电极110，设置在第一保护层171上，并通过开孔173与漏极层125电连接。在其他实施例中，像素电极110还可以与源极层124电连接。
其中，间隔层172包括主间隔层174。其中，不同厚度的第一保护层171、主间隔层174以及开孔173是通过一掩膜板对平坦层17进行图案化而形成，掩膜板的第一区域、第二区域以及第三区域分别具有第一透光率、第二透光率以及第三透光率。具体掩膜板的结构如前文所述，在此不再赘述。
间隔层172还包括辅间隔层175，辅间隔层175的厚度与第一保护层171、主间隔层174以及开孔173的不同，辅间隔层175是通过掩膜板对平坦层171进行图案化而形成，掩膜板的第四区域具有第四透光率。
具体的第一保护层171、主间隔层174、辅间隔层175以及开孔173的设置如前文所述，在此不再赘述。
本发明还提供了一种显示面板。请参阅图6。
如图6所示，显示面板40包括相对设置的阵列基板41和彩膜基板42以及设置在阵列基板41和彩膜基板42之间的液晶层43。其中，阵列基板41包括所述的阵列基板10，在此不再赘述。
综上所述，本发明通过一道工序形成了第一保护层、间隔层以及开孔，节省了制程工序，从而达到简化制程的目的，另外，本发明还制作了W色阻层，从而可以增加透过率和亮度。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (13)

  1. 一种阵列基板的制造方法，其中，所述制造方法包括：
    提供一基板；
    在所述基板上设置薄膜晶体管；
    在所述薄膜晶体管上设置R、G、B以及W色阻层；
    在所述R、G、B以及W色阻层上设置平坦层，并通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。
  2. 根据权利要求1所述的制造方法，其中，所述在所述基板上设置薄膜晶体管包括：
    在所述基板上依次层叠设置栅极层、栅极绝缘层、半导体层、源极层和漏极层以及第二保护层；
    其中，所述开孔露出所述源极层或漏极层；
    所述方法还包括：
    在所述平坦层上设置像素电极，并通过所述开孔与所述漏极层或源极层电连接。
  3. 根据权利要求2所述的制造方法，其中，所述在薄膜晶体管上设置R、G、B以及W色阻层包括：
    在所述第二保护层上依次间隔设置R、G、B以及W色阻层，所述R、G、B以及W色阻层位于同一层，同时在两色阻层之间将所述R、G以及B色阻层中的至少两个通过半色调掩膜法形成黑色矩阵层。
  4. 根据权利要求1所述的制造方法，其中，所述间隔层包括主间隔层；
    所述通过多段差掩膜工艺形成第一保护层、间隔层以及开孔包括：
    提供一掩膜板，所述掩膜板的第一区域、第二区域以及第三区域分别具有第一透光率、第二透光率以及第三透光率；
    通过所述掩膜板对所述平坦层进行图案化，以在对应的区域分别形成不同厚度的第一保护层、主间隔层以及开孔。
  5. 根据权利要求4所述的制造方法，其中，所述间隔层还包括辅间隔层，所述掩膜板的第四区域具有第四透光率；
    所述方法包括：
    在通过所述掩膜板对所述平坦层进行图案化时，所述平坦层在对应所述第四区域的位置进一步形成厚度不同于所述第一保护层、主间隔层以及开孔的所述辅间隔层。
  6. 一种阵列基板，其中，所述阵列基板包括：
    基板；
    薄膜晶体管，设置在所述基板上；
    R、G、B以及W色阻层，设置在所述薄膜晶体管上；
    平坦层，设置在所述色阻层上，其中，所述平坦层通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。
  7. 根据权利要求6所述的阵列基板，其中，所述薄膜晶体管包括依次层叠设置的栅极层、栅极绝缘层、半导体层、源极层和漏极层以及第二保护层；
    其中，所述开孔露出所述源极层或漏极层；
    所述阵列基板还包括：
    像素电极，设置在所述平坦层上，并通过所述开孔与所述漏极层或源极层电连接；
    所述R、G、B以及W色阻层依次间隔设置在所述第二保护层上，且所述R、G、B以及W色阻层位于同一层；
    所述阵列基板还包括黑色矩阵层，所述黑色矩阵层设置在两色阻层之间，并且所述黑色矩阵层是所述R、G以及B色阻层中的至少两个通过半色调掩膜法形成的。
  8. 根据权利要求6所述的阵列基板，其中，所述间隔层包括主间隔层；
    其中，所述不同厚度的第一保护层、主间隔层以及开孔是通过一掩膜板对所述平坦层进行图案化而形成，所述掩膜板的第一区域、第二区域以及第三区域分别具有第一透光率、第二透光率以及第三透光率。
  9. 根据权利要求8所述的阵列基板，其中，所述间隔层还包括辅间隔层，所述辅间隔层的厚度与所述第一保护层、主间隔层以及开孔的不同，所述辅间隔层是通过所述掩膜板对所述平坦层进行图案化而形成，所述掩膜板的第四区域具有第四透光率。
  10. 一种显示面板，其中，所述显示面板包括相对设置的阵列基板和彩膜基板以及设置在所述阵列基板和所述彩膜基板之间的液晶层，其中，所述阵列基板包括：
    基板；
    薄膜晶体管，设置在所述基板上；
    R、G、B以及W色阻层，设置在所述薄膜晶体管上；
    平坦层，设置在所述色阻层上，其中，所述平坦层通过多段差掩膜工艺形成厚度不同的第一保护层、间隔层以及开孔。
  11. 根据权利要求10所述的显示面板，其中，所述薄膜晶体管包括依次层叠设置的栅极层、栅极绝缘层、半导体层、源极层和漏极层以及第二保护层；
    其中，所述开孔露出所述源极层或漏极层；
    所述阵列基板还包括：
    像素电极，设置在所述平坦层上，并通过所述开孔与所述漏极层或源极层电连接；
    所述R、G、B以及W色阻层依次间隔设置在所述第二保护层上，且所述R、G、B以及W色阻层位于同一层；
    所述阵列基板还包括黑色矩阵层，所述黑色矩阵层设置在两色阻层之间，并且所述黑色矩阵层是所述R、G以及B色阻层中的至少两个通过半色调掩膜法形成的。
  12. 根据权利要求10所述的显示面板，其中，所述间隔层包括主间隔层；
    其中，所述不同厚度的第一保护层、主间隔层以及开孔是通过一掩膜板对所述平坦层进行图案化而形成，所述掩膜板的第一区域、第二区域以及第三区域分别具有第一透光率、第二透光率以及第三透光率。
  13. 根据权利要求12所述的显示面板，其中，所述间隔层还包括辅间隔层，所述辅间隔层的厚度与所述第一保护层、主间隔层以及开孔的不同，所述辅间隔层是通过所述掩膜板对所述平坦层进行图案化而形成，所述掩膜板的第四区域具有第四透光率。
PCT/CN2017/102625 2017-07-27 2017-09-21 一种显示面板、阵列基板及其制造方法 Ceased WO2019019316A1 (zh)

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