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WO2019011296A1 - 生物感测元件及其制造方法以及生物分子检测方法 - Google Patents

生物感测元件及其制造方法以及生物分子检测方法 Download PDF

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Publication number
WO2019011296A1
WO2019011296A1 PCT/CN2018/095440 CN2018095440W WO2019011296A1 WO 2019011296 A1 WO2019011296 A1 WO 2019011296A1 CN 2018095440 W CN2018095440 W CN 2018095440W WO 2019011296 A1 WO2019011296 A1 WO 2019011296A1
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Prior art keywords
working electrodes
conductive layer
metal conductive
layer
insulating layer
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PCT/CN2018/095440
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English (en)
French (fr)
Inventor
袁俊傑
连俊龙
赵昌博
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National Yang Ming Chiao Tung University NYCU
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National Yang Ming Chiao Tung University NYCU
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Priority to KR1020207003851A priority Critical patent/KR102346959B1/ko
Priority to EP18832770.4A priority patent/EP3654024A4/en
Priority to JP2020523481A priority patent/JP6942250B2/ja
Publication of WO2019011296A1 publication Critical patent/WO2019011296A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6813—Hybridisation assays
    • C12Q1/6816—Hybridisation assays characterised by the detection means
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6813—Hybridisation assays
    • C12Q1/6816—Hybridisation assays characterised by the detection means
    • C12Q1/6825—Nucleic acid detection involving sensors
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6813—Hybridisation assays
    • C12Q1/6834—Enzymatic or biochemical coupling of nucleic acids to a solid phase
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G01N33/5438—Electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/551—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals the carrier being inorganic
    • G01N33/553—Metal or metal coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H10P14/40—
    • H10P50/264—
    • H10P50/283—
    • H10P50/71—
    • H10P95/062—

Definitions

  • the present invention relates to a biosensing element and a method of manufacturing the same, and a method of biomolecule detection using the above biosensing element.
  • An aspect of the present invention provides a method of fabricating a biosensing element, comprising the steps of: providing a substrate; forming a metal conductive layer on the substrate; and the metal conductive layer has an upper surface; forming a plurality of working electrodes The upper surface of the metal conductive layer is such that each of the working electrodes includes a top surface, and each of the top surfaces is higher than the upper surface of the metal conductive layer; and an insulating layer is formed to cover the metal conductive layer and surround the working electrodes, wherein one of the insulating layers The surface is interposed between the top surface and the upper surface of the metal conductive layer such that the working electrodes protrude from the upper surface of the insulating layer.
  • the step of forming an insulating layer includes: depositing an insulating material layer on the metal conductive layer and the working electrodes; performing a planarization process on the insulating material layer to form a planarized insulating material layer And etching the planarized insulating material layer to form an insulating layer.
  • the bio-sensing element 100 includes a substrate 103 , a metal conductive layer 106 , a second insulating layer 108 , a plurality of working electrodes 110 , and a biological probe 112 .
  • the substrate 103 includes a substrate 102 and a first insulating layer 104.
  • the substrate 103 may still include, but is not limited to, other semiconductor materials such as gallium nitride (GaN), silicon carbide (SiC), silicon germanium (SiGe), germanium, or combinations thereof.
  • the first insulating layer 104 is disposed on the substrate 102.
  • the first insulating layer 104 may include, but is not limited to, an oxide, a nitride, an oxynitride, or a combination thereof, such as silicon oxide, silicon nitride, silicon oxynitride.
  • the first insulating layer 104 is made of a low dielectric constant (low-K) material, so that the bio-sensing element 100 has good insulating properties.
  • the first insulating layer 104 has a thickness of from about 0.02 micrometers ( ⁇ m) to about 0.25 micrometers, such as about 0.10 micrometers, about 0.15 micrometers, or about 0.20 micrometers.
  • the metal conductive layer 106 has a thickness of from about 0.02 microns to about 0.7 microns, such as about 0.1 microns, 0.2 microns, 0.3 microns, 0.4 microns, about 0.5 microns, or about 0.6 microns.
  • the first height H1 of each of the working electrodes 110 is from about 0.05 microns to about 0.6 microns, such as about 0.05 microns, 0.1 microns, 0.2 microns, about 0.3 microns, or about 0.4 microns.
  • each working electrode 110 has a width of from about 0.08 microns to about 0.4 microns, such as about 0.08 microns, 0.1 microns, 0.2 microns, or about 0.3 microns.
  • each of the working electrodes 110 has an aspect ratio of between about 0.125 and about 7.5, such as about 0.2 or about 0.3.
  • the working electrodes 110 may be in the shape of a cylinder, a regular triangular cylinder, a regular square cylinder, a regular pentagonal cylinder, a regular hexagonal cylinder or a regular octagonal cylinder.
  • the working electrodes 110 may include, but are not limited to, tantalum (Ta), tantalum nitride (TaN), copper (Cu), titanium (Ti), titanium nitride (TiN), tungsten (W), Titanium (Ti), nickel (Ni), silver (Ag), aluminum (Al), copper aluminum alloy (AlCu), copper aluminum silicon alloy (AlSiCu), or a combination thereof.
  • the material of the working electrodes 110 is preferably titanium nitride (TiN).
  • the biological probe 112 can be modified to be coupled to the working electrode 110 by various existing methods.
  • the biological probe 112 can include, but is not limited to, a nucleic acid, a cell, an antibody, an enzyme, or a combination thereof.
  • the biological probe 112 described above can recognize various biological molecules.
  • the biological probe 112 when the biological probe 112 is an antibody, it can bind to a target molecule (ie, an antigen) in a sample to detect the presence of a target molecule in various prior art techniques.
  • the second insulating layer 108 covers the metal conductive layer 106 and surrounds the working electrodes 110.
  • the upper surface 113 of the second insulating layer 108 is interposed between the top surface 109 of the working electrodes 110 and the upper surface 105 of the metal conductive layer 106.
  • Such working electrodes 110 protrude from the upper surface 113 of the second insulating layer 108.
  • the protruding portion has a second height H2 which is a vertical distance from the top surface 109 to the upper surface 113 of the second insulating layer 108.
  • the second height H2 is from about 0.01 microns to about 0.5 microns, such as about 0.05 microns, 0.15 microns, about 0.3 microns, or about 0.45 microns.
  • the working electrode 110 when a voltage is applied to the working electrodes 110, the working electrode 110 is caused to generate an electric field around the protruding working electrodes 110.
  • the coating range of the electric field will not be limited to the top surface 109 of the working electrode 110, but will extend to the sidewall 111 of the working electrode 110, so that the electrochemical reaction is greatly increased, thereby increasing the intensity of the signal.
  • the working electrode 110 having a three-dimensional configuration provides sensitivity superior to existing planar working electrodes when the same voltage is applied.
  • the second insulating layer 108 can include, but is not limited to, an oxide, a nitride, an oxynitride, or a combination thereof, or a compound thereof, such as silicon oxide, silicon nitride, silicon oxynitride.
  • the material of the first insulating layer 104 is the same as the material of the second insulating layer 108. In some embodiments, the material of the first insulating layer 104 is different from the material of the second insulating layer 108.
  • the working electrode 110 when a voltage is applied to the working electrode 110, background noise (noise) is generated to interfere with the detection result, and the generation of background noise is related to the cross-sectional area of the electrode.
  • background noise noise
  • the working electrode 110 when a voltage is applied to the working electrode 110, the working electrode 110 produces an electric field coating range that is larger than that of the existing planar working electrode.
  • the coverage of the electric field will not be limited to the top surface 109 of the working electrode 110, but will extend to the sidewall 111 of the working electrode 110. Therefore, in the case where the effective electric field coating range is the same, the width of the working electrodes 110 can be smaller than the width of the existing planar working electrode. Therefore, the width of the working electrode 110 according to the embodiment of the present invention may be smaller than the width of the existing planar working electrode, thereby having a smaller cross-sectional area than the existing planar working electrode, reducing the generation of background noise.
  • the first height H1 of each of the working electrodes 110 is from about 0.05 microns to about 0.6 microns.
  • the second height H2 of the convex portions of the respective working electrodes 110 is made smaller than 0.01 ⁇ m.
  • the working electrode 110 has an aspect ratio of from about 0.125 to about 7.5. When the aspect ratio of the working electrode 110 is greater than 7.5, the working electrode is liable to cause defects in the structure, which reduces the reliability of the overall device.
  • a substrate 203 is provided.
  • the substrate 203 includes a substrate 202 and a first insulating layer 204, wherein the first insulating layer 204 is formed over the substrate 202.
  • the first insulating layer 204 may be formed by atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), chemical oxidation (Chemical Oxidation), thermal oxidation (Heat Oxidation), and/or other suitable methods. form.
  • a metal conductive layer 206 is formed over the first insulating layer 204.
  • the metal conductive layer 206 can be formed using PVD, CVD, Electron Beam Evaporation, sputtering, electroplating, and/or other suitable processes.
  • the metal conductive layer 206 may include, but is not limited to, titanium (Ti), nickel (Ni), silver (Ag), aluminum (Al), copper aluminum alloy (AlCu), copper aluminum silicon alloy (AlSiCu) or Its combination.
  • the metal conductive layer 206 is formed to a thickness of from about 0.3 microns to about 0.5 microns, such as from about 0.3 microns, about 0.4 microns, or about 0.5 microns.
  • a conductive layer 208 is deposited over the metal conductive layer 206.
  • conductive layer 208 can be formed using PVD, CVD, Electron Beam Evaporation, sputtering, electroplating, and/or other suitable processes.
  • the conductive layer 208 can include, but is not limited to, tantalum (Ta), tantalum nitride (TaN), copper (Cu), titanium (Ti), titanium nitride (TiN), tungsten (W), or combinations thereof.
  • the conductive layer 208 has a thickness of from about 0.05 microns to about 0.6 microns, such as about 0.1 microns, about 0.2 microns, about 0.3 microns, or about 0.4 microns.
  • the conductive layer 208 is patterned to form a plurality of working electrodes 212 (only a single working electrode is shown by way of example).
  • a patterned photoresist layer (not shown) is formed over the conductive layer 208 by using the mask 210 and the lithography process.
  • the photoresist layer may be, for example, a positive photoresist or a negative photoresist.
  • an etching process is performed on the conductive layer 208 using the patterned photoresist layer to form a plurality of working electrodes 212, and the upper surface 205 of the metal conductive layer 206 is exposed.
  • Each of the working electrodes 212 has a first height H1.
  • Each of the working electrodes 212 has a top surface 209 and side walls 211. Each top surface 209 is above the upper surface 205 of the metal conductive layer 206.
  • Each side wall 211 is adjacent to each top surface 209.
  • the metal conductive layer 206 is patterned. As shown in FIG. 8, a patterned photoresist layer (not shown) is formed over the working electrode 212 and the metal conductive layer 206 by using a mask 214 and a lithography process.
  • the photoresist layer may be, for example, a positive photoresist or a negative photoresist.
  • an etching process is performed on the metal conductive layer 206 by using the patterned photoresist layer to expose a portion of the upper surface of the lower first insulating layer 204 such that the metal conductive layer 206 has a sidewall 207 adjacent to the upper surface 205 and below. A portion of the upper surface of the exposed first insulating layer 204.
  • a layer 216 of insulating material is deposited over the first insulating layer 204, the metal conductive layer 206, and the working electrodes 212.
  • the insulating material layer 216 may, for example, conformally cover the first insulating layer 204, the metal conductive layer 206, and the working electrodes 212.
  • the layer of insulating material 216 can be multiple layers, and the layers of material are different from one another.
  • the layer of insulating material 216 can be multiple layers and the layers of material are identical to one another.
  • the layer of insulating material can be formed using PVD, CVD, plasma enhanced CVD (PECVD), and/or other suitable processes.
  • the insulating material layer 216 may include, but is not limited to, an oxide, a nitride, an oxynitride, or a combination thereof, such as silicon oxide, silicon nitride, silicon oxynitride.
  • the layer of insulating material 216 is tetraethoxysilane.
  • the insulating material layer 216 is planarized to form a second insulating layer 218.
  • the insulating material layer 216 is planarized to obtain a second insulating layer 218 having a substantially flat upper surface.
  • the planarization process can be chemical mechanical planarization (CMP) and/or other suitable processes.
  • the insulating material layer 216 is a multi-layered insulating material layer, and the layers of materials are different from each other, so that the planarization process efficiency is better.
  • a portion of the second insulating layer 218 is removed by a suitable etching process such that the upper surface 213 of the second insulating layer 218 is interposed between the upper surface 205 of the metal conductive layer 206 and the top surface 209 of the working electrodes 212. between. Therefore, the working electrodes 212 protrude from the upper surface 213 of the second insulating layer 218, and the protruding portions have a second height H2 which is a vertical distance from the top surface 209 to the upper surface 213 of the second insulating layer 218.
  • the second height H2 is from about 0.01 microns to about 0.5 microns, such as about 0.05 microns, 0.15 microns, about 0.3 microns, or about 0.45 microns.
  • the biological probe can be further modified over the working electrode 212 such that the biological probe is coupled to the top surface 209 of the working electrode 212.
  • Each of the working electrodes 310 and the counter electrodes 312 can be electrically connected to the signal detecting unit 316 by one or more wires 318. Accordingly, as shown in FIG. 14A, when a voltage is applied to the working electrodes 310, the electrodes 310 are caused to generate respective electric fields E which surround the corresponding working electrodes 310. At this time, a sample to be tested is then provided in contact with the aforementioned biological probe 314. If the target molecule in the sample to be tested is combined with the biological probe 314, the working electrode 310 generates a signal, and the generated signal is transmitted to the signal detecting unit 316 through the wire 318, thereby detecting the presence of the target molecule.
  • FIG. 14B a partially enlarged schematic view is shown in FIG. 14A.
  • the electric field E75 depicts the electric field lines connected by 75% of the maximum electric field strength at each point in the space. In other words, the electric field strength at each point "inside” the range covered by the electric field E75 is greater than 75% of the maximum electric field strength.
  • the electric field E50 depicts the electric field lines formed by the 50% maximum electric field strength at each point in the space. In other words, the electric field strength at each point "inside” the range covered by the electric field E50 is greater than 50% of the maximum electric field strength.
  • Embodiment 1 is a circular working electrode having a radius of 0.05 ⁇ m, the maximum electric field value is 2.86 ⁇ 10 6 (v/m); and Example 2 is having a radius of 0.1 ⁇ m.
  • the circular working electrode has a maximum electric field value of 1.85 x 10 6 (v/m);
  • Example 3 is a circular working electrode having a radius of 0.2 ⁇ m, and the maximum electric field value is 7.75 x 10 5 (v/m).
  • Example 2 0.1 1.85x10 6
  • Example 3 0.2 7.75x10 5
  • the biosensing element has a working electrode protruding from the insulating layer.
  • the larger the electric field the faster the moving object moves. As a result, the current density is higher.
  • J A (x, t) represents the current density of the charged object A at position x
  • time t. z A represents the valence of the charged object A
  • D A represents the diffusion coefficient of the charged object A
  • C A (x, t) represents the concentration of the charged object A at the position x
  • time t. ⁇ (x) represents the electric field that the charged object A receives at the position x.
  • the protruding working electrode makes the electric field coating range wider, and the movement of the charged object is affected by the wide coverage of the electric field, which contributes to the improvement of the electrochemical reaction efficiency and thus the signal strength. Accordingly, the working electrode width obtained by the embodiment of the present invention can be smaller than that of the existing planar electrode, thereby improving the sensitivity.

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Abstract

一种生物感测元件，包含基板、金属传导层、多个工作电极以及绝缘层。金属传导层配置于基板之上，且金属传导层具有上表面。此些工作电极配置于金属传导层的上表面之上，其中各个工作电极包含一顶面，且各顶面高于金属传导层的上表面。绝缘层覆盖金属传导层并围绕此些工作电极，其中绝缘层的上表面介于此些顶面与金属传导层的上表面之间，使得此些工作电极凸出绝缘层的上表面。在此亦提供一种生物感测元件的制造方法，以及利用此生物感测元件进行生物分子检测的方法。本发明的优点是，此些凸出的工作电极使得电场包覆范围较广，有助于电化学反应效率的提升，进而增加信号的强度。

Description

生物感测元件及其制造方法以及生物分子检测方法 技术领域
本发明的涉及一种生物感测元件及其制造方法，以及使用上述生物感测元件进行生物分子检测的方法。
背景技术
近年来开发出各种不同的生物分子的检测方法以进行诊断各种疾病、从事生理代谢相关研究或监测环境因子等等。微机电系统(Micro-electromechanical Systems,MEMS)的发展备受瞩目，其结合半导体制程技术与精密机械技术，可制作出一半导体元件用于感测光学、化学、生物分子或其他性质的微小芯片。然而，随着半导体产业进展到纳米技术制程节点以寻求较高装置密度、较高表现及较低成本的关系，来自制造及设计方面的挑战驱使着三维设计的发展。据此，发展出一种具有较高表现及低成本的生物感测芯片为当前亟欲解决的问题。
发明内容
本发明的一态样提供一种生物感测元件的制造方法，包含以下步骤：提供一基板；形成一金属传导层于基板之上，且金属传导层具有一上表面；形成多个工作电极于金属传导层的上表面，使得各个工作电极包含一顶面，且各顶面高于金属传导层的上表面；以及形成一绝缘层覆盖金属传导层并围绕这些工作电极，其中绝缘层的一上表面介于这些顶面与金属传导层的上表面之间，使得这些工作电极凸出绝缘层的上表面。
根据本发明的一些实施方式其中各个工作电极具有高宽比为约0.125至约7.5之间。
根据本发明的一些实施方式，其中形成绝缘层的步骤包含：沉积一绝缘材料层于金属传导层及这些工作电极之上；对绝缘材料层进行一平坦化制程，以形成一平坦化绝缘材料层；以及蚀刻平坦化绝缘材料层，而形成绝缘层。
根据本发明的一些实施方式，生物感测元件的制造方法进一步包含将生物性探针连接于这些工作电极上，其中生物性探针为核酸、细胞、抗体、酵素、多肽或其组合。
本发明的一态样提供一种生物感测元件，包含一基板、一金属传导层、多个工作电极以及一绝缘层。金属传导层配置于基板之上，且金属传导层具有一上表面。此些工作电极配置于金属传导层的上表面之上，其中各个工作电极包含一顶面，且各顶面高于金属传导层的上表面。绝缘层覆盖金属传导层并围绕这些工作电极，其中绝缘层的一上表面介于这些顶面与金属传导层的上表面之间，使得这些工作电极凸出绝缘层的上表面。
根据本发明的一些实施方式，其中各个工作电极具有高宽比为约0.125至约7.5之间。
根据本发明的一些实施方式，其中各个工作电极凸出绝缘层的上表面一第二高度，且此第二高度为约0.001微米至约0.5微米之间。
根据本发明的一些实施方式，生物感测元件进一步包含生物性探针连接至这些工作电极，其中生物性探针为核酸、细胞、抗体、酵素、多肽或其组合。
本发明的一态样提供一种生物分子检测方法，包含：提供一样品包含一目标分子；提供如本揭露实施态样所述的生物感测元件；将生物性探针连接于这些工作电极上；施加一电压于这些工作电极使得这些工作电极产生一围绕这些工作电极的电场；以及将样品与生物性探针接触使得样品中的目标分子与生物性探针结合进而使得这些工作电极产生一信号。
根据本发明的一些实施方式，其中施加电压于这些工作电极的步骤包含：施加一电压于这些工作电极使得75％的电场最大强度出现于朝绝缘层的上表面约27％至约40％第二高度之处。
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。
附图说明
本发明的实施例是依据以下详尽的叙述搭配附图做阅读。
图1绘示根据本发明一些实施方式的一种生物感测元件的剖视图；
图2至图12绘示根据本发明一些实施方式，生物感测元件在制程各个阶段的剖视图；
图13绘示根据本发明一些实施方式，一种生物感测装置的俯视图；
图14A绘示根据本发明一些实施方式，一种生物感测装置AA线的剖视 图；
图14B是依据图14A，绘示其剖视图的局部放大示意图。
其中，附图标记
100 生物感测元件
102 基材
103 基板
104 第一绝缘层
105 上表面
106 金属传导层
107 侧壁
108 第二绝缘层
109 顶面
110 工作电极
111 侧壁
112 生物性探针
113 上表面
200 生物感测元件
202 基材
203 基板
204 第一绝缘层
205 上表面
206 金属传导层
207 侧壁
208 导电层
209 顶面
210 光罩
211 侧壁
212 工作电极
213 上表面
214 光罩
216 绝缘材料层
218 第二绝缘层
300 生物感测装置
302 基材
303 基板
304 第一绝缘层
305 侧壁
306a 金属层
306b 金属层
307 上表面
308 第二绝缘层
309 侧壁
310 工作电极
311 顶面
312 对电极
313 上表面
314 生物性探针
316 信号检测单元
318 导线
H1 第一高度
H2 第二高度
E 电场
E75 电场
E50 电场
具体实施方式
本揭露接下来将会提供许多不同的实施方式或实施例以实施本揭露中不同的特征。各特定实施例中的组成及配置将会在以下作描述以简化本揭露。这些为实施例仅作为示例并非用于限定本揭露。例如，一第一元件形成于一第二元件「上方」或「之上」可包含实施例中的第一元件与第二元件直接接触，亦 可包含第一元件与第二元件之间更有其他额外元件使第一元件与第二元件无直接接触。此外，在本揭露各种不同的范例中，将重复地使用元件符号及/或字母。此重复乃为了简化与清晰的目的，而其本身并不决定各种实施例及/或结构配置之间的关系。
此外，像是「之下」、「下面」、「较低」、「上面」、「较高」、以及其他类似的相对空间关系的用语，可用于此处以便描述附图中一元件或特征与另一元件或特征之间的关系。这些相对空间关系的用语乃为了涵盖除了附图所描述的方向以外，装置于使用或操作中的各种不同的方向。上述装置可另有其他导向方式(旋转90度或朝其他方向)，此时的空间相对关系也可依上述方式解读。
图1绘示根据本发明一些实施方式的一种生物感测元件的剖视图。如图1所示，生物感测元件100包含基板103、金属传导层106、第二绝缘层108、多个工作电极110与生物性探针112。在某些实施例中，基板103包含基材102及第一绝缘层104。基板103尚可包含但不限于其他半导体材料，例如氮化镓(GaN)、碳化硅(SiC)、硅锗(SiGe)、锗或其组合。基材102可例如为硅基材。取决于技术领域中的设计需求，基材102可包含各种不同的掺杂配置。在一实施例中，基材102可为重掺杂、低电阻率的半导体基材。在另一实施例中，基板103为玻璃基板，其不具有第一绝缘层104。
第一绝缘层104配置于基材102之上。在一实施例中，第一绝缘层104可包含但不限于氧化物、氮化物、氮氧化物或其组合，例如氧化硅、氮化硅、氮氧化硅。第一绝缘层104选用低介电常数(low-K)的材料，使生物感测元件100具有良好的绝缘性质。在某些实施例中，第一绝缘层104的厚度为约0.02微米(μm)至约0.25微米，例如约0.10微米、约0.15微米或约0.20微米。
金属传导层106配置于基板103之上，并且具有侧壁107及上表面105，其中侧壁107邻接上表面105，且第二绝缘层108覆盖侧壁107。在一实施例中，金属传导层106可包含但不限于钛(Ti)、镍(Ni)、银(Ag)、铝(Al)、铜铝合金(AlCu)、铜铝硅合金(AlSiCu)或其组合。在一实施例中，金属传导层106的厚度为约0.02微米至约0.7微米，例如为约0.1微米、0.2微米、0.3微米、0.4微米、约0.5微米或约0.6微米。
各个工作电极110配置于金属传导层106的上表面105之上，并且各具有 顶面109及侧壁111。各顶面109高于金属传导层106的上表面105之上，各侧壁111邻接于各顶面109，且第二绝缘层108仅覆盖各侧壁111的一部分。各个工作电极110具有第一高度H1凸出于金属传导层106之上。在一些实施例中，各个工作电极110的第一高度H1为约0.05微米至约0.6微米，例如为约0.05微米、0.1微米、0.2微米、约0.3微米或约0.4微米。在一些实施例中，各个工作电极110的宽度为约0.08微米至约0.4微米，例如为约0.08微米、0.1微米、0.2微米或约0.3微米。在一实施例中，各个工作电极110具有高宽比(aspect ratio)为约0.125至约7.5之间，例如为约0.2或约0.3。
在本发明部分实施例中，此些工作电极110的形状可为圆柱体、正三角柱体、正四角柱体、正五角柱体、正六角柱体或正八角柱体。在一些实施方式中，此些工作电极110可包含但不限于钽(Ta)、氮化钽(TaN)、铜(Cu)、钛(Ti)、氮化钛(TiN)、钨(W)、钛(Ti)、镍(Ni)、银(Ag)、铝(Al)、铜铝合金(AlCu)、铜铝硅合金(AlSiCu)或其组合。在一些实施方式中，此些工作电极110的材料较佳为氮化钛(TiN)。
生物性探针112可藉由各种现有的方法修饰连接于此些工作电极110。根据本发明各种实施方式，生物性探针112可包含但不限于核酸、细胞、抗体、酵素或其组合。应说明的是，上述的生物性探针112可辨识各种生物性分子。举例来说，当生物性探针112为抗体时，其可结合至一样品中的目标分子(即抗原)进而以各种现有技术检测到目标分子的存在。
第二绝缘层108覆盖金属传导层106并围绕此些工作电极110，其中第二绝缘层108的上表面113介于此些工作电极110的顶面109及金属传导层106的上表面105之间，使得此些工作电极110凸出第二绝缘层108的上表面113。而上述凸出部分具有第二高度H2，为各该顶面109至第二绝缘层108的上表面113的垂直距离。在一些实施例中，第二高度H2为约0.01微米至约0.5微米，例如为约0.05微米、0.15微米、约0.3微米或约0.45微米。藉此，当一电压施加于此些工作电极110时，将使得此工作电极110产生一电场围绕在此些凸出的工作电极110。电场的包覆范围将不限于此些工作电极110的顶面109，而会延伸至此些工作电极110的侧壁111，使得电化学反应大幅度的增加，进而增加信号的强度。在施加相同的电压下，具有立体构造的工作电极110提供优于现有的平面工作电极的灵敏度。
在一些实施例中，第二绝缘层108可包含但不限于氧化物、氮化物、氮氧化物或其组合或其化合物，例如氧化硅、氮化硅、氮氧化硅。在一些实施例中，第一绝缘层104的材料与第二绝缘层108的材料相同。在一些实施例中，第一绝缘层104的材料与第二绝缘层108的材料不同。
此外，施加电压于工作电极110时亦会产生背景杂讯(噪声)而干扰检测结果，背景杂讯的产生与电极的截面积有关。当电极的截面积越大，背景杂讯的强度越高。根据本发明一些实施方式中，施加电压于工作电极110时，工作电极110所产生的电场包覆范围较现有平面工作电极大。电场的包覆范围将不限于此些工作电极110的顶面109，而会延伸至此些工作电极110的侧壁111。故在有效电场包覆范围相同的情况下，这些工作电极110的宽度可比现有平面工作电极的宽度小。因此，根据本发明实施方式的工作电极110的宽度可以小于现有的平面工作电极的宽度，进而具有小于现有平面工作电极的截面积，降低背景杂讯的产生。
如前文所述，在某些实施方式中，各个工作电极110的第一高度H1为约0.05微米至约0.6微米。当各个工作电极110的第一高度H1小于0.05微米时，将使得各个工作电极110凸出部分的第二高度H2小于0.01微米。在此情况下，当施加电压于工作电极110时，有效电场范围增加的程度有限，导致提高生物性探针112的电化学反应的效果不明显。据此，可知工作电极110凸出部分越高，其有效电场的包覆范围越广，电化学反应亦越佳。惟须留意，工作电极110的高宽比为约0.125至约7.5。当工作电极110的高宽比大于7.5时，易使得工作电极于结构上产生缺陷，降低整体装置的可靠度。
图2至图12绘示根据本发明一些实施方式的制造生物感测元件的方法在各制程阶段的剖视图。如图2至图3所示，提供一基板203。在一些实施方式中，基板203包含基材202及第一绝缘层204，其中第一绝缘层204形成于基材202之上。第一绝缘层204可藉由原子层沉积(ALD)、物理气相沉积(PVD)、化学气相沉积(CVD)、化学氧化(Chemical Oxidation)、热氧化(Heat Oxidation)及/或其他适合的方法来形成。在一实施例中，第一绝缘层204可包含但不限于氧化物、氮化物、氮氧化物或其组合，例如氧化硅、氮化硅、氮氧化硅。在一些实施例中，形成第一绝缘层204的厚度为约0.02微米至约0.25微米，例如为约0.10微米、约0.15微米或约0.20微米。
继续参阅图4，在此步骤中，形成一金属传导层206于第一绝缘层204之上。在一些实施方式中，金属传导层206可利用PVD、CVD、电子束蒸镀(Electron Beam Evaporation)、溅镀、电镀及/或其他适合的制程来形成。在一实施例中，金属传导层206可包含但不限于钛(Ti)、镍(Ni)、银(Ag)、铝(Al)、铜铝合金(AlCu)、铜铝硅合金(AlSiCu)或其组合。在一实施例中，形成金属传导层206的厚度为约0.3微米至约0.5微米，例如为约0.3微米、约0.4微米或约0.5微米。
现参照图5，在此步骤中，沉积一导电层208于金属传导层206上。在一些实施方式中，导电层208可利用PVD、CVD、电子束蒸镀(Electron Beam Evaporation)、溅镀、电镀及/或其他适合的制程来形成。在一些实施方式中，导电层208可包含但不限于钽(Ta)、氮化钽(TaN)、铜(Cu)、钛(Ti)、氮化钛(TiN)、钨(W)或其组合。在一些实施例中，导电层208的厚度为约0.05微米至约0.6微米，例如为约0.1微米、约0.2微米、约0.3微米或约0.4微米。
现参照图6至图7，对导电层208进行图案化制程，而形成多个工作电极212(仅例示性显示单个工作电极)。如图6所示，利用光罩210及微影制程在导电层208上方形成图案化光阻层(未绘示)，此光阻层可例如为正型光阻或负型光阻。接着来到图7，利用图案化光阻层对导电层208执行蚀刻制程，而形成多个工作电极212，并暴露出金属传导层206的上表面205。各个工作电极212具有第一高度H1。各个工作电极212具有顶面209及侧壁211。各顶面209高于金属传导层206的上表面205之上。各侧壁211邻接于各顶面209。
继续参照图8至图9，对金属传导层206进行图案化制程。如图8所示，利用光罩214及微影制程在工作电极212及金属传导层206上方形成图案化光阻层(未绘示)，此光阻层可例如为正光阻或负光阻。接着来到图9，利用图案化光阻层对金属传导层206执行蚀刻制程，暴露出下方第一绝缘层204的部分上表面，使得金属传导层206具有一侧壁207邻接上表面205及下方暴露的第一绝缘层204的部分上表面。
参照图10，沉积绝缘材料层216于第一绝缘层204、金属传导层206以及此些工作电极212之上。在此步骤中，绝缘材料层216可例如保角地覆盖第一绝缘层204、金属传导层206及此些工作电极212。在一些实施方式中，绝缘材料层216可为多层，且各层材料彼此相异。在一些实施方式中，绝缘材料层 216可为多层，且各层材料彼此相同。在一些实施方式中，绝缘材料层可利用PVD、CVD、等离子增强型化学气相沉积(Plasma enhanced CVD,PECVD)及/或其他适合的制程来形成。
在一实施例中，绝缘材料层216可包含但不限于氧化物、氮化物、氮氧化物或其组合，例如氧化硅、氮化硅、氮氧化硅。在一实施例中，绝缘材料层216为四乙氧基硅烷。
接着参照图11，对绝缘材料层216进行平坦化制程以形成第二绝缘层218。在此步骤中，对上述绝缘材料层216进行平坦化制程，以得到具有实质平坦上表面的第二绝缘层218。在一实施例中，平坦化制程可以为化学机械平坦化(CMP)及/或其他适合的制程。在一些实施例中，绝缘材料层216为多层绝缘材料层，且各层材料彼此相异，使得平坦化制程效率较佳。
最后参照图12，藉由适当的蚀刻制程移除部分第二绝缘层218，使得第二绝缘层218的上表面213介于金属传导层206的上表面205与此些工作电极212的顶面209之间。故此些工作电极212凸出第二绝缘层218的上表面213，而上述凸出部分具有第二高度H2，为各该顶面209至第二绝缘层218的上表面213的垂直距离。在一些实施例中，第二高度H2为约0.01微米至约0.5微米，例如为约0.05微米、0.15微米、约0.3微米或约0.45微米。在一些实施例中，可进一步将生物性探针修饰于此些工作电极212之上，使得生物性探针连接至此些工作电极212的顶面209。
根据本发明的各种实施方式所制造的生物感测元件，可相容于各种生物感测装置。图13绘示本发明某些实施方式的生物感测装置300的上视图，图14A绘示沿图13中AA线段的剖视图。如图13及图14A所示，生物感测装置300包含基板303、金属传导层306a、金属传导层306b、第二绝缘层308、多个工作电极310、对电极312、生物性探针314、信号检测单元316及导线318。
各个工作电极310及对电极312可藉由一或多条导线318电性连接至信号检测单元316。据此，如图14A所示，当施加一电压于此些工作电极310时，会使得此些电极310产生各自的电场E，其围绕对应的工作电极310。此时，接着提供一待测样品与前述生物性探针314接触。若待测样品中的目标分子与生物性探针314结合时，此些工作电极310会产生一信号，所产生的信号藉由导线318传送至信号检测单元316，进而检测到目标分子的存在。
继续参照图14A，金属传导层306b配置于第一绝缘层304之上。对电极312配置于金属传导层306b之上。在一些实施例中，金属传导层306b的材料与金属传导层306a的材料相同。在一些实施例中，金属传导层306b的材料与金属传导层306a的材料相异。至于基板303、金属传导层306a、第二绝缘层308、此些工作电极310、生物性探针314可与前文所述的基板103、金属传导层106、第二绝缘层108、多个工作电极110、生物性探针112相同，于此不再重复赞述。
接着参照第14B图，是依据图14A绘示其局部放大示意图。当施加电压于此些工作电极310时，会使得此些工作电极310产生各自的电场。例示性地，电场E75绘示空间中各点75％最大电场强度所连成的电场线。换言之，在电场E75所包覆的范围「内」其各点电场强度皆大于75％最大电场强度。例示性地，电场E50绘示空间中各点50％最大电场强度所连成的电场线。换言之，在电场E50所包覆的范围「内」其各点电场强度皆大于50％最大电场强度。根据一些实施方式，施加电压于此些工作电极310时，会使得75％最大电场强度(即最大电场强度乘上0.75)出现在从顶面311朝下方位移约第二高度H2的27-40％之处(即电场E75所连成的电场线与此些工作电极310交会之处)；换言之，75％最大电场强度出现在上表面313上方约60-73％的第二高度H2之处。根据一些实施方式，施加电压于此些工作电极310时，会使得50％最大电场强度(即最大电场强度乘上0.5)出现在从顶面311朝下方位移约第二高度H2的80-93％之处(即电场E50所连成的电场线与此些工作电极310交会之处)；换言之，50％最大电场强度出现在上表面313上方约7-20％的第二高度H2之处。
电场分析模拟
本实验利用COMSOL Multiphysics 4.4模拟分析软体，进行电场强度的模拟分析。如下表一所示，当工作电极为圆形时，实施例1为具有半径0.05微米的圆形工作电极，最大电场数值为2.86x10 6(v/m)；实施例2为具有半径0.1微米的圆形工作电极，最大电场数值为1.85x10 6(v/m)；实施例3为具有半径0.2微米的圆形工作电极，最大电场数值为7.75x10 5(v/m)。
表一
工作电极 电极半径(μm) 最大电场数值(v/m)
实施例1 0.05 2.86x10 6
实施例2 0.1 1.85x10 6
实施例3 0.2 7.75x10 5
由上述可知，当工作电极的半径减少时，最大电场数值则会增加。接着，如下表二所示，模拟工作电极凸出部分的电场的包覆范围及强度。当工作电极为传统的平面工作电极时，高度为0微米，故无侧壁，无论100％、75％或50％最大电场强度皆出现于工作电极的表面上。接着如下表二所示，当工作电极第二高度H2为0.15微米时，自工作电极顶面朝向下方绝缘层计算，75％最大电场强度出现于距离工作电极顶面0.05微米之处；而50％最大电场强度出现于距离工作电极顶面0.13微米之处。
表二
Figure PCTCN2018095440-appb-000001
综上所述，根据本发明的各种实施方式，生物感测元件具有工作电极凸出于绝缘层。在电化学反应中，当电场越大带电物体的移动越快。结果电流密度就越高。
现有一电化学反应公式(Electrochemical Methods:Fundamentals and Applications.Allen J.Bard,Larry R.Faulkner,Wiley.ISBN:0471043729)如下：
Figure PCTCN2018095440-appb-000002
J A(x,t)代表带电物体A在位置x,时间t时的电流密度。z A代表带电物体A的价数。D A代表带电物体A的扩散系数。C A(x,t)代表带电物体A在位置x,时间t时的浓度。ε(x)代表带电物体A在位置x受到的电场。此凸出的工作电极使得电场包覆范围较广，对带电物体的移动受到电场包覆范围较广的影响，有助于电化学反应效率的提升，进而增加信号的强度。据此，本发明实施方式所制得的工作电极宽度可较现有平面电极的面积小，进而提升灵敏度。
前文概述多个实施例的特征以使得熟习该项技术者可更好地理解本揭示内容的态样。熟习该项技术者应了解，可容易地将本揭示内容用作设计或修改用于实现相同目的及/或达成本文引入的实施例的相同优点的其他制程及结构 的基础。熟习该项技术者亦应认识到，此类等效物构造不违背本揭示内容的精神及范畴，且可在不违背本揭示内容的精神及范畴的情况下于此作出各种变化、替代以及变更。

Claims (10)

  1. 一种生物感测元件的制造方法，其特征在于，包含以下步骤：
    提供一基板；
    形成一金属传导层于该基板之上，且该金属传导层具有一上表面；
    形成多个工作电极于该金属传导层的该上表面，使得各该工作电极包含一顶面，且各该顶面高于该金属传导层的该上表面；以及
    形成一绝缘层覆盖该金属传导层并围绕这些工作电极，其中该绝缘层的一上表面介于这些顶面与该金属传导层的该上表面之间，使得这些工作电极凸出该绝缘层的该上表面。
  2. 根据权利要求1所述的方法，其特征在于，其中各该工作电极具有高宽比为0.125至7.5之间。
  3. 根据权利要求1所述的方法，其特征在于，其中形成该绝缘层的步骤包含：
    沉积一绝缘材料层于该金属传导层及这些工作电极之上；
    对该绝缘材料层进行一平坦化制程，以形成一平坦化绝缘材料层；以及
    蚀刻该平坦化绝缘材料层，而形成该绝缘层。
  4. 根据权利要求1所述的方法，其特征在于，进一步包含将生物性探针连接于这些工作电极上，其中该生物性探针为核酸、细胞、抗体、酵素、多肽或其组合。
  5. 一种生物感测元件，其特征在于，包含：
    一基板；
    一金属传导层，配置于该基板之上，且该金属传导层具有一上表面；
    多个工作电极，配置于该金属传导层的该上表面之上，其中各该工作电极包含一顶面，且各该顶面高于该金属传导层的该上表面；以及
    一绝缘层，覆盖该金属传导层并围绕这些工作电极，其中该绝缘层的一上表面介于这些顶面与该金属传导层的该上表面之间，使得这些工作电极凸出该 绝缘层的该上表面。
  6. 根据权利要求5所述的生物感测元件，其特征在于，其中各该工作电极具有高宽比为0.125至7.5之间。
  7. 根据权利要求5所述的生物感测元件，其特征在于，各该工作电极凸出该上表面一第二高度，且该第二高度为0.01微米至0.5微米之间。
  8. 根据权利要求5所述的生物感测元件，其特征在于，进一步包含生物性探针连接至这些工作电极，其中该生物性探针为核酸、细胞、抗体、酵素、多肽或其组合。
  9. 一种生物分子检测方法，其特征在于，包含：
    提供一样品包含一目标分子；
    提供如权利要求5所述的生物感测元件；
    将生物性探针连接于这些工作电极上；
    施加一电压于这些工作电极使得这些工作电极产生一围绕这些工作电极的电场；以及
    将该样品与该生物性探针接触使得该样品中的该目标分子与该生物性探针结合进而使得这些工作电极产生一信号。
  10. 根据权利要求9所述的方法，其特征在于，其中施加该电压于这些工作电极的步骤包含：施加一电压于这些工作电极使得75％的该电场的最大强度出现于朝该绝缘层的该上表面27％至40％该第二高度之处。
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US11105765B2 (en) 2021-08-31
TW201905988A (zh) 2019-02-01
TWI745392B (zh) 2021-11-11
JP2020527243A (ja) 2020-09-03
CN109211994B (zh) 2021-08-17
JP6942250B2 (ja) 2021-09-29
EP3654024A1 (en) 2020-05-20
KR20200023476A (ko) 2020-03-04
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