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WO2019000533A1 - 灯丝、电离室及离子植入设备 - Google Patents

灯丝、电离室及离子植入设备 Download PDF

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Publication number
WO2019000533A1
WO2019000533A1 PCT/CN2017/094414 CN2017094414W WO2019000533A1 WO 2019000533 A1 WO2019000533 A1 WO 2019000533A1 CN 2017094414 W CN2017094414 W CN 2017094414W WO 2019000533 A1 WO2019000533 A1 WO 2019000533A1
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WO
WIPO (PCT)
Prior art keywords
filament
cross
end portion
sectional dimension
bent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/094414
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English (en)
French (fr)
Inventor
谢锐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/562,416 priority Critical patent/US10297424B2/en
Publication of WO2019000533A1 publication Critical patent/WO2019000533A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources

Definitions

  • the present application relates to the field of display device manufacturing technologies, and in particular, to a filament, an ionization chamber, and an ion implantation device.
  • the ion implantation apparatus implants the plasma into the glass substrate.
  • the ion source gas uniformly enters the ionization chamber through the air supply tube, and the filaments in the ionization chamber pass current to generate hot electrons, and the hot electrons collide with the ion source gas to form a plasma.
  • the filament in the ion implantation apparatus needs to be bent a plurality of times to form a specific shape, and the cross-sectional area of the filament at the bending point position becomes small, so that the filament of the bending point is prevented from being larger than the unbent portion, and is passed to the filament.
  • the ion source gas entering the ionization chamber collides with the hot electrons to generate plasma. Since the resistance of the filament is large, more hot electrons are generated, and more hot electrons collide with the ion source gas to generate more plasma.
  • the volume of the plasma near the bending point of the filament is higher, the plasma concentration near the filament is not uniform, and the higher plasma concentration is more likely to corrode the filament, so that the filament is more likely to break near the bending point after prolonged use.
  • the life of the filament is shortened, the maintenance cost of the ion implantation equipment and the production cost of the display device are improved.
  • the technical problem to be solved by the present application is to provide a filament, an ionization chamber and an ion implantation device, which are used to solve the problem that the filament in the prior art is more likely to break near the bending point after a long time of use, and the filament has a short life and ion implantation.
  • the maintenance cost of the equipment and the high production cost of the display equipment is less than the cost of the display equipment.
  • a filament applied to an ion implantation apparatus wherein the filament includes a first end, a second end, and a connection between the first end and the second end, the One end portion and the second end portion for electrically connecting to a power supply device, the first end portion being bent by the connecting portion with respect to the second end portion, and a cross-sectional dimension of the bent connecting portion
  • the cross-sectional dimensions are the same as the first end portion and the second end portion.
  • the connecting portion includes a main body portion and a convex portion, the main body portion is connected between the first end portion and the second end portion, and a cross-sectional dimension of the main body portion and the first end portion
  • the second end portion has the same cross-sectional dimension, and the convex portion protrudes from a surface of the main body portion in a cross-sectional dimension direction such that a cross-sectional dimension of the connecting portion before bending is larger than the first portion
  • the cross-sectional dimension of the one end portion and the second end portion, and the cross-sectional dimension of the bent connecting portion is equal to the cross-sectional dimension of the first end portion and the second end portion.
  • the protruding portion includes a first end, a second end, and a third end between the first end and the second end, the first end protruding from the main body portion and connecting the An end of the first end portion is protruded from an end of the main body portion connecting the second end portion, and a cross-sectional dimension of the first end to the third end is uniformly increased before bending.
  • the cross-sectional dimension of the second end to the third end is uniformly increased to make the cross-sectional dimension of the bent connecting portion uniform.
  • the curved portion of the connecting portion has an arc of not less than ⁇ such that the distance between the first end portion and the second end portion is not greater than the bending diameter of the connecting portion.
  • the filament comprises a plurality of the filament units, and the first end of each of the filament units
  • the second end of the adjacent filament unit is fixedly coupled, and the second end of each of the filament units is fixedly coupled to the first end of the adjacent filament unit.
  • the connecting portions of the two adjacent filament units have opposite bending directions.
  • the first end portion, the second end portion, and the connecting portion are integrally formed.
  • the filament is a tungsten wire.
  • An ionization chamber for use in an ion implantation apparatus, wherein the ionization chamber includes a cavity, a gas supply tube, and a filament, the gas supply tube and the filament are located in the cavity, and the filament generates hot electrons when energized,
  • the air supply tube is for outputting an ion source gas, the ion source gas impinging on the hot electron to generate a plasma, the filament comprising a first end, a second end, and the first end and the a connection portion between the second ends, the first end portion and the second end portion for electrically connecting to the power supply device, the first end portion being opposite to the second end portion by the connection portion
  • the bent portion and the cross-sectional dimension of the bent portion are the same as the cross-sectional dimensions of the first end portion and the second end portion.
  • the connecting portion includes a main body portion and a convex portion, the main body portion is connected between the first end portion and the second end portion, and a cross-sectional dimension of the main body portion and the first end portion
  • the second end portion has the same cross-sectional dimension, and the convex portion protrudes from a surface of the main body portion in a cross-sectional dimension direction such that a cross-sectional dimension of the connecting portion before bending is larger than the first portion
  • the cross-sectional dimension of the one end portion and the second end portion, and the cross-sectional dimension of the bent connecting portion is equal to the cross-sectional dimension of the first end portion and the second end portion.
  • the protruding portion includes a first end, a second end, and a third end between the first end and the second end, the first end protruding from the main body portion and connecting the An end of the first end portion is protruded from an end of the main body portion connecting the second end portion, and a cross-sectional dimension of the first end to the third end is uniformly increased before bending.
  • the cross-sectional dimension of the second end to the third end is uniformly increased to make the cross-sectional dimension of the bent connecting portion uniform.
  • the curved portion of the connecting portion has an arc of not less than ⁇ such that the distance between the first end portion and the second end portion is not greater than the bending diameter of the connecting portion.
  • the filament comprises a plurality of the filament units, and the first end of each of the filament units
  • the second end of the adjacent filament unit is fixedly coupled, and the second end of each of the filament units is fixedly coupled to the first end of the adjacent filament unit.
  • the connecting portions of the two adjacent filament units have opposite bending directions.
  • the first end portion, the second end portion, and the connecting portion are integrally formed.
  • the filament is a tungsten wire.
  • the ion implantation apparatus includes a filament, the filament including a first end, a second end, and a connection between the first end and the second end a first end portion and the second end portion for electrically connecting to the power supply device, the first end portion being bent by the connecting portion with respect to the second end portion, and the bent portion
  • the cross-sectional dimension of the connecting portion is the same as the cross-sectional dimension of the first end portion and the second end portion.
  • the connecting portion includes a main body portion and a convex portion, the main body portion is connected between the first end portion and the second end portion, and a cross-sectional dimension of the main body portion and the first end portion
  • the second end portion has the same cross-sectional dimension, and the convex portion protrudes from a surface of the main body portion in a cross-sectional dimension direction such that a cross-sectional dimension of the connecting portion before bending is larger than the first portion
  • the cross-sectional dimension of the one end portion and the second end portion, and the cross-sectional dimension of the bent connecting portion is equal to the cross-sectional dimension of the first end portion and the second end portion.
  • the protruding portion includes a first end, a second end, and a third end between the first end and the second end, the first end protruding from the main body portion and connecting the An end of the first end portion is protruded from an end of the main body portion connecting the second end portion, and a cross-sectional dimension of the first end to the third end is uniformly increased before bending.
  • the cross-sectional dimension of the second end to the third end is uniformly increased to make the cross-sectional dimension of the bent connecting portion uniform.
  • the curved portion of the connecting portion has an arc of not less than ⁇ such that the distance between the first end portion and the second end portion is not greater than the bending diameter of the connecting portion.
  • the connecting portion is a bent portion of the filament
  • the cross-sectional dimensions of the respective portions (the first end portion, the second end portion, and the connecting portion) after the filament is bent are the same, due to the resistance of the filament and the cross section of the filament Dimensional, filament cross-section size is uniform, the resistance of each part of the filament is the same, the amount of hot electrons generated by each part after the filament is energized is the same, the hot electrons collide with the ion source gas to generate plasma, the plasma concentration around the filament is uniform, and the filament is avoided.
  • the plasma concentration near the certain part is too high to corrode the filament, the filament is not easy to be broken, the life of the filament is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.
  • FIG. 1 , FIG. 2 and FIG. 3 are schematic structural diagrams of the filament before being bent according to the first embodiment of the present application.
  • FIG. 4 is a schematic structural view of the filament after being bent according to the first embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a filament provided in Embodiment 1 of the present application.
  • FIG. 6 and FIG. 7 are schematic structural diagrams of the filament after being bent according to the second embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a filament provided in Embodiment 2 of the present application.
  • FIG. 9 is a schematic diagram of an ionization chamber provided by an embodiment of the present application.
  • the filament provided by the embodiment of the present application is applied to an ion implantation device, which is a key device in the pre-manufacturing process of the integrated circuit, and the ion implantation is a technique of doping a region near the surface of the semiconductor, and the purpose thereof is to change the load of the semiconductor.
  • the concentration of the stream and the type of conductivity can accurately control the injection dose, injection angle, injection depth, lateral diffusion, etc., overcome the limitations of conventional processes, and improve the integration degree, opening speed and yield of the circuit. And longevity, reducing cost and power consumption.
  • Ion implantation equipment is widely used in doping processes to meet the requirements of shallow junction, low temperature and precise control, and has become an indispensable key equipment in integrated circuit manufacturing processes. Further, the ionization chamber and the ion implantation apparatus provided by the embodiments of the present application can be applied to a process of a low temperature polysilicon thin film transistor and an organic light emitting diode of a display device, that is, implanting a plasma on a surface of a glass substrate.
  • the filament 100 provided in the first embodiment of the present application includes a first end portion 10 , a second end portion 20 , and a connecting portion 30 .
  • the connecting portion 30 is located at the first end portion .
  • the first end portion 10 and the second end portion 20 are connected between the first end portion 10 and the second end portion 20.
  • the first end portion 10 and the second end portion 20 are electrically connected to the power supply device.
  • the first end portion 10 is disposed at an end of the first end portion 10 facing away from the connecting portion 30, and is provided with a connector for accessing the power supply device.
  • the end of the end portion 20 facing away from the connecting portion 30 is also provided with a connector for accessing the power supply device such that the filament 100 is connected in series with the power supply device, and the power supply device inputs a current to the filament 100 through the filament 100 to generate hot electrons.
  • the first end portion 10 is bent relative to the second end portion 20 by the connecting portion 30. Specifically, the first end portion 10 and the second end portion 20 are symmetrically bent, and the bent filament 100 can save the volume of the filament 100 on the one hand. On the other hand, the concentration of plasma generated per unit space is increased.
  • the cross-sectional dimension of the bent connecting portion 30 is the same as the cross-sectional dimension of the first end portion 10 and the second end portion 20, that is, the cross-sectional dimensions of the respective portions of the filament 100 are the same, and the cross-sectional size of the filament 100 is uniform.
  • the cross-sectional shape of the filament 100 is circular. In other embodiments, the cross-sectional shape of the filament 100 may be elliptical or rectangular.
  • the cross-sectional dimension of the connecting portion 30 is larger than the cross-sectional dimensions of the first end portion 10 and the second end portion 20.
  • the connecting portion 30 includes the main body portion 32 and the convex portion 34, and the main body portion 32 is connected to the first end portion 10 and Between the second end portions 20, the cross-sectional dimension of the main body portion 32 is the same as the cross-sectional dimension of the first end portion 10 and the second end portion 20, and the convex portion 34 is protruded from the surface of the main body portion 32 in the cross-sectional dimension direction.
  • the cross-sectional dimension of the connecting portion 30 is made larger than the cross-sectional dimension of the first end portion 10 and the cross-sectional dimension of the second end portion 20 to be at the connecting portion 30.
  • the connecting portion 30 is larger than the remaining amount of the first end portion 10 and the second end portion 20 (ie, the cross-sectional dimension of the convex portion 34) to compensate for the amount of compression of the bent portion of the connecting portion 30, so that the bent connecting portion 30 is obtained.
  • the cross-sectional dimension is equal to the cross-sectional dimensions of the first end portion 10 and the second end portion 20.
  • the connecting portion 30 includes opposite first sides and second sides.
  • the first end portion 10 and the second end portion 20 are relatively bent toward the first side, that is, the first side is the connecting portion 30 is compressed when being bent.
  • One side, the second side is the side where the connecting portion 30 is stretched when bent, and the convex portion 34 may be located on the first side (as shown in FIG. 1) or on the second side (as shown in FIG. 2). Show), or provide a raised portion 34 on both the first side and the second side (as shown in Figure 3).
  • the connecting portion 30 is a bent portion of the filament 100. After the filament 100 is bent, the cross-sectional dimensions of the respective portions (the first end portion 10, the second end portion 20, and the connecting portion 30) are the same, due to the resistance of the filament 100 and the filament 100.
  • the cross-sectional size is related, the cross-sectional size of the filament 100 is uniform, the resistance values of the filaments 100 are the same, the number of hot electrons generated by the filaments 100 is the same, the thermal electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 Uniformity, avoiding the plasma concentration near the filament 100 is too high to corrode the filament 100, the filament 100 is not easy to break, the life of the filament 100 is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.
  • the protrusion 34 includes a first end 342, a second end 344, and a third end 346 between the first end 342 and the second end 344.
  • the first end 342 protrudes from the main body 32 to connect the first end.
  • the second end 344 protrudes from the end of the main body portion 32 connecting the second end portion 20, and the cross-sectional dimensions of the first end 342 to the third end 346 before the bending are uniformly increased, and the second end 344 to the third end
  • the cross-sectional dimension of the end 346 is uniformly increased to make the cross-sectional dimension of the bent connecting portion 30 uniform.
  • the cross-sectional dimension of the connecting portion 30 is the largest overall cross-sectional dimension of the filament 100, the cross-sectional dimension of the connecting portion 30 is uniformly reduced toward the first end portion 10, the cross-sectional dimension changes uniformly, and the cross-sectional dimension of the connecting portion 30 is toward the second end.
  • the portion 20 is uniformly reduced, and the cross-sectional size changes uniformly. Since the position of the bent portion closer to the center of the bend is larger as the sectional size is reduced after the bending, the cross-sectional size of the filament 100 extending from the center of the bend toward the first end portion 10 and the second end portion 20 is reduced.
  • the filament 100 having a uniform amount and a uniform cross-sectional dimension can be compensated for compensating for the reduction amount of each portion when the filament 100 is bent, so that the connecting portion 30 has the same cross-sectional dimension as the first end portion 10 and the second end portion 20, and the filament 100 is the same.
  • the overall cross-sectional size is uniform, the amount of hot electrons generated in each part after the filament 100 is energized is the same, the hot electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 is uniform, so as to avoid excessive plasma concentration near a certain part of the filament 100. Corrosion of the filament 100, the filament 100 is not easily broken, the life of the filament 100 is improved, the maintenance cost of the ion implantation apparatus and the production cost of the display device are reduced.
  • the first end portion 10, the connecting portion 30 and the second end portion 20 are sequentially connected to form a bending unit 200.
  • the filament 100 includes a plurality of filament 100 units, and the first end of each filament 100 unit The portion 10 is fixedly coupled to the second end portion 20 of the adjacent filament 100 unit, and the second end portion 20 of each filament 100 unit is fixedly coupled to the first end portion 10 of the adjacent filament 100 unit.
  • the plurality of filament 100 units connected to each other, only the first end portion 10 and the second end portion 20 of the edge of the filament 100 unit are provided with a connector for accessing the power supply device, so that the filament 100 is connected in series with the power supply device.
  • the power supply device inputs a current to the filament 100 through the filament 100 to generate hot electrons.
  • the filaments 100 are connected in series with each other, and the power supply device outputs a current to the filament 100 while controlling the power flowing through the units of the filaments 100, that is, simultaneously controlling the amount of hot electrons generated by the units of each filament 100.
  • the units of the filaments 100 are the same unit of the filament 100, that is, the resistance values of the units of the filaments 100 are the same, so that the hot electrons generated by the units of the filaments 100 are uniform, and the concentration of the generated plasma is uniform.
  • the series connection of a plurality of bent filaments 100 increases the amount of plasma generated and also avoids an excessively large overall size of the filament 100.
  • the bending directions of the connecting portions 30 of the adjacent two filament 100 units are opposite.
  • two of the filament 100 units are respectively referred to as a first filament 100 unit and a second filament 100 unit, and the second end 20 of the first filament 100 unit is connected to the second The first end 10 of the filament 100 unit, the first end 10 of the first filament 100 unit is opposite the second end 20 and the second end 20 of the second filament 100 unit is opposite the first end 10
  • the bending direction is reversed, which increases the amount of plasma generated and also avoids an excessively large overall size of the filament 100.
  • the first end portion 10, the second end portion 20, and the connecting portion 30 are integrally formed.
  • the filament 100 can be formed into a strip shape and then bent, and the manufacturing method is simple.
  • the filament 100 is made of a metal material.
  • the filament 100 is a tungsten wire.
  • Metal materials are low in cost and can meet the requirements for generating hot electrons.
  • the connecting portion 30 is a bent portion of the filament 100. After the filament 100 is bent, the cross-sectional dimensions of the respective portions (the first end portion 10, the second end portion 20, and the connecting portion 30) are the same, due to the resistance of the filament 100 and the filament 100.
  • the cross-sectional size is related, the cross-sectional size of the filament 100 is uniform, the resistance values of the filaments 100 are the same, the number of hot electrons generated by the filaments 100 is the same, the thermal electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 Uniformity, avoiding the plasma concentration near the filament 100 is too high to corrode the filament 100, the filament 100 is not easy to break, the life of the filament 100 is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.
  • the filament 100 provided in the second embodiment of the present invention is bent at the connecting portion 30 , the curvature of the connecting portion is not less than ⁇ , and the distance between the first end portion 10 and the second end portion 20 after bending is a. It is not larger than the bending diameter b of the connecting portion 30. In one embodiment, the distance a between the first end portion 10 and the second end portion 20 after bending is smaller than the bending diameter b of the connecting portion 30 (as shown in FIG. 6 ). In other embodiments, after bending The distance a between the first end portion 10 and the second end portion 20 is equal to the bending diameter b of the connecting portion 30 (as shown in FIG. 7).
  • the connecting portion 30 is a bent portion of the filament 100. After the filament 100 is bent, the cross-sectional dimensions of the respective portions (the first end portion 10, the second end portion 20, and the connecting portion 30) are the same, due to the resistance of the filament 100 and the filament 100.
  • the cross-sectional size is related, the cross-sectional size of the filament 100 is uniform, the resistance values of the filaments 100 are the same, the number of hot electrons generated by the filaments 100 is the same, the thermal electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 Uniformity, avoiding the plasma concentration near the filament 100 is too high to corrode the filament 100, the filament 100 is not easy to break, the life of the filament 100 is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.
  • the first end portion 10, the connecting portion 30, and the second end portion 20 are sequentially connected to form a bending unit 200.
  • the filament 100 includes a plurality of filament 100 units, and the first end of each filament 100 unit The portion 10 is fixedly coupled to the second end portion 20 of the adjacent filament 100 unit, and the second end portion 20 of each filament 100 unit is fixedly coupled to the first end portion 10 of the adjacent filament 100 unit.
  • the plurality of filament 100 units connected to each other, only the first end portion 10 and the second end portion 20 of the edge of the filament 100 unit are provided with a connector for accessing the power supply device, so that the filament 100 is connected in series with the power supply device.
  • the power supply device inputs a current through the lamp to the filament 100
  • Silk 100 is used to generate hot electrons.
  • the filaments 100 are connected in series with each other, and the power supply device outputs a current to the filament 100 while controlling the power flowing through the units of the filaments 100, that is, simultaneously controlling the amount of hot electrons generated by the units of each filament 100.
  • the units of the filaments 100 are the same unit of the filament 100, that is, the resistance values of the units of the filaments 100 are the same, so that the hot electrons generated by the units of the filaments 100 are uniform, and the concentration of the generated plasma is uniform.
  • the series connection of a plurality of bent filaments 100 increases the amount of plasma generated and also avoids an excessively large overall size of the filament 100.
  • the bending directions of the connecting portions 30 of the adjacent two filament 100 units are opposite.
  • two of the filament 100 units are respectively referred to as a first filament 100 unit and a second filament 100 unit, and the second end 20 of the first filament 100 unit is connected to the second The first end 10 of the filament 100 unit, the first end 10 of the first filament 100 unit is opposite the second end 20 and the second end 20 of the second filament 100 unit is opposite the first end 10
  • the bending direction is reversed, which increases the amount of plasma generated and also avoids an excessively large overall size of the filament 100.
  • the first end portion 10, the second end portion 20, and the connecting portion 30 are integrally formed.
  • the filament 100 can be formed into a strip shape and then bent, and the manufacturing method is simple.
  • the filament 100 is made of a metal material.
  • the filament 100 is a tungsten wire.
  • Metal materials are low in cost and can meet the requirements for generating hot electrons.
  • the connecting portion 30 is a bent portion of the filament 100. After the filament 100 is bent, the cross-sectional dimensions of the respective portions (the first end portion 10, the second end portion 20, and the connecting portion 30) are the same, due to the resistance of the filament 100 and the filament 100.
  • the cross-sectional size is related, the cross-sectional size of the filament 100 is uniform, the resistance values of the filaments 100 are the same, the number of hot electrons generated by the filaments 100 is the same, the thermal electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 Uniformity, avoiding the plasma concentration near the filament 100 is too high to corrode the filament 100, the filament 100 is not easy to break, the life of the filament 100 is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.
  • An embodiment of the present application also provides an ionization chamber, as shown in FIG.
  • the ionization chamber provided by the embodiment of the present application is applied to an ion implantation apparatus.
  • the ionization chamber includes a cavity 400, an air supply tube 500, and the filament 100 described above.
  • the air supply tube 500 and the filament 100 are located in the cavity 400, and the filament 100 passes through the power supply device.
  • the hot electrons are generated when 300 is energized, and the air supply tube 500 is used to output an ion source gas, and the ion source gas strikes the hot electrons to generate a plasma.
  • the cavity 400 is an enclosed space surrounded by a plurality of wall surfaces for providing an environment in which an ion source gas collides with the hot electrons to generate a plasma.
  • the air supply tube 500 is located in the cavity 400 and is supplied with air.
  • the tube 500 is in communication with a gas supply device that supplies an ion source gas, and the gas supply device outputs an ion source gas into the chamber 400 through the air supply tube 500.
  • the filament 100 is also located within the cavity 400. Specifically, the filament 100 is a wire. In a preferred embodiment, the filament 100 is a tungsten wire.
  • the air supply tube 500 outputs an ion source gas colliding with the hot electrons generated by the filament 100 to generate a plasma implanted to the substrate 600 for ion implantation.
  • the connecting portion 30 is a bent portion of the filament 100. After the filament 100 is bent, the cross-sectional dimensions of the respective portions (the first end portion 10, the second end portion 20, and the connecting portion 30) are the same, due to the resistance of the filament 100 and the filament 100.
  • the cross-sectional size is related, the cross-sectional size of the filament 100 is uniform, the resistance values of the filaments 100 are the same, the number of hot electrons generated by the filaments 100 is the same, the thermal electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 Uniformity, avoiding the plasma concentration near the filament 100 is too high to corrode the filament 100, the filament 100 is not easy to break, the life of the filament 100 is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.
  • Embodiments of the present application also provide an ion implantation apparatus for implanting a plasma with a semiconductor device, the ion implantation apparatus including the filament 100 described above.
  • the connecting portion 30 is a bent portion of the filament 100. After the filament 100 is bent, the cross-sectional dimensions of the respective portions (the first end portion 10, the second end portion 20, and the connecting portion 30) are the same, due to the resistance of the filament 100 and the filament 100.
  • the cross-sectional size is related, the cross-sectional size of the filament 100 is uniform, the resistance values of the filaments 100 are the same, the number of hot electrons generated by the filaments 100 is the same, the thermal electrons collide with the ion source gas to generate plasma, and the plasma concentration around the filament 100 Uniformity, avoiding the plasma concentration near the filament 100 is too high to corrode the filament 100, the filament 100 is not easy to break, the life of the filament 100 is improved, the maintenance cost of the ion implantation equipment and the production cost of the display device are reduced.

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

一种灯丝，电离室及离子植入设备。该灯丝包括第一端部（10）、第二端部（20）及位于该第一端部与该第二端部之间的连接部（30），该第一端部和该第二端部用于电连接至供电器件，该第一端部通过该连接部相对该第二端部弯折，并且弯折的该连接部的截面尺寸与该第一端部及该第二端部的截面尺寸相同。灯丝截面尺寸均匀，灯丝各部位的阻值相同，灯丝通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝周围的等离子体浓度均匀，避免出现灯丝某部位附近等离子体浓度过高腐蚀灯丝，灯丝不易断裂，提高了灯丝的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。

Description

灯丝、电离室及离子植入设备
本申请要求于2017年6月26日提交中国专利局、申请号为201710495834.8、申请名称为“灯丝、电离室及离子植入设备”的中国专利申请的优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本申请涉及显示器件制造技术领域，尤其是涉及一种灯丝、电离室及离子植入设备。
背景技术
显示设备已成为人们现代生活中的不可缺少的一部分，在显示设备的低温多晶硅(Low Temperature Poly-silicon，LTPS)薄膜晶体管和有机发光二极管(Organic Light-Emitting Diode，OLED)的制程中，需要使用离子植入设备将等离子体植入到玻璃基板。在离子植入设备中，离子源气体通过送气管均匀的进入电离室，电离室内的灯丝通入电流后产生热电子，热电子与离子源气体发生碰撞形成等离子体。
现有技术中，离子植入设备中的灯丝需要经过多次弯曲形成特定的形状，灯丝在弯曲点位置截面积会变小，导致弯折点的灯丝阻止大于未弯折部分，向灯丝通入电流后产生热电子，进入电离室内的离子源气体与热电子撞击产生等离子体，由于灯丝阻值大的部分会产生较多热电子，更多的热电子与离子源气体撞击产生更多的等离子体，导致灯丝的弯折点附近的等离子体浓度更高，灯丝附近的等离子体浓度不均匀，较高的等离子体浓度更易腐蚀灯丝，从而灯丝在长时间使用后更易在弯折点附近断裂，缩短了灯丝的寿命，提高了离子植入设备的维护成本和显示设备的生产成本。
申请内容
本申请要解决的技术问题是提供一种灯丝、电离室及离子植入设备，用以解决现有技术中灯丝在长时间使用后更易在弯折点附近断裂，灯丝的寿命短，离子植入设备的维护成本和显示设备的生产成本高的问题。
一种灯丝，应用于离子植入设备，其中，所述灯丝包括第一端部、第二端部及位于所述第一端部与所述第二端部之间的连接部，所述第一端部和所述第二端部用于电连接至供电器件，所述第一端部通过所述连接部相对所述第二端部弯折，并且弯折的所述连接部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同。
其中，所述连接部包括主体部与凸起部，所述主体部连接于所述第一端部与所述第二端部之间，并且所述主体部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同，所述凸起部凸设于所述主体部的截面尺寸方向的表面上，以使弯折前的所述连接部的截面尺寸大于所述第一端部及所述第二端部的截面尺寸，弯折后的所述连接部的截面尺寸等于所述第一端部及所述第二端部的截面尺寸。
其中，所述凸起部包括第一端、第二端及位于所述第一端与所述第二端之间的第三端，所述第一端凸设于所述主体部连接所述第一端部的一端，所述第二端凸设于所述主体部连接所述第二端部的一端，弯折前所述第一端至所述第三端的截面尺寸均匀增大，所述第二端至所述第三端的截面尺寸均匀增大，以使弯折后的所述连接部的截面尺寸均匀。
其中，弯折后的所述连接部的弧度不小于π，以使所述第一端部与所述第二端部的距离不大于所述连接部的弯折直径。
其中，所述第一端部、所述连接部及所述第二端部依次相连形成弯折单元，所述灯丝包括多个所述灯丝单元，每个所述灯丝单元的所述第一端部固定连接相邻的所述灯丝单元的所述第二端部，每个所述灯丝单元的所述第二端部固定连接相邻的所述灯丝单元的所述第一端部。
其中，相邻的两个所述灯丝单元的连接部的弯折方向相反。
其中，所述第一端部、所述第二端部及所述连接部一体成型。
其中，所述灯丝为钨丝。
一种电离室，应用于离子植入设备，其中，所述电离室包括腔体、送气管及灯丝，所述送气管和所述灯丝位于所述腔体内，所述灯丝通电时产生热电子， 所述送气管用于输出离子源气体，所述离子源气体撞击所述热电子，以产生等离子体，所述灯丝包括第一端部、第二端部及位于所述第一端部与所述第二端部之间的连接部，所述第一端部和所述第二端部用于电连接至供电器件，所述第一端部通过所述连接部相对所述第二端部弯折，并且弯折的所述连接部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同。
其中，所述连接部包括主体部与凸起部，所述主体部连接于所述第一端部与所述第二端部之间，并且所述主体部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同，所述凸起部凸设于所述主体部的截面尺寸方向的表面上，以使弯折前的所述连接部的截面尺寸大于所述第一端部及所述第二端部的截面尺寸，弯折后的所述连接部的截面尺寸等于所述第一端部及所述第二端部的截面尺寸。
其中，所述凸起部包括第一端、第二端及位于所述第一端与所述第二端之间的第三端，所述第一端凸设于所述主体部连接所述第一端部的一端，所述第二端凸设于所述主体部连接所述第二端部的一端，弯折前所述第一端至所述第三端的截面尺寸均匀增大，所述第二端至所述第三端的截面尺寸均匀增大，以使弯折后的所述连接部的截面尺寸均匀。
其中，弯折后的所述连接部的弧度不小于π，以使所述第一端部与所述第二端部的距离不大于所述连接部的弯折直径。
其中，所述第一端部、所述连接部及所述第二端部依次相连形成弯折单元，所述灯丝包括多个所述灯丝单元，每个所述灯丝单元的所述第一端部固定连接相邻的所述灯丝单元的所述第二端部，每个所述灯丝单元的所述第二端部固定连接相邻的所述灯丝单元的所述第一端部。
其中，相邻的两个所述灯丝单元的连接部的弯折方向相反。
其中，所述第一端部、所述第二端部及所述连接部一体成型。
其中，所述灯丝为钨丝。
一种离子植入设备，其中，所述离子植入设备包括灯丝，所述灯丝包括第一端部、第二端部及位于所述第一端部与所述第二端部之间的连接部，所述第一端部和所述第二端部用于电连接至供电器件，所述第一端部通过所述连接部相对所述第二端部弯折，并且弯折的所述连接部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同。
其中，所述连接部包括主体部与凸起部，所述主体部连接于所述第一端部与所述第二端部之间，并且所述主体部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同，所述凸起部凸设于所述主体部的截面尺寸方向的表面上，以使弯折前的所述连接部的截面尺寸大于所述第一端部及所述第二端部的截面尺寸，弯折后的所述连接部的截面尺寸等于所述第一端部及所述第二端部的截面尺寸。
其中，所述凸起部包括第一端、第二端及位于所述第一端与所述第二端之间的第三端，所述第一端凸设于所述主体部连接所述第一端部的一端，所述第二端凸设于所述主体部连接所述第二端部的一端，弯折前所述第一端至所述第三端的截面尺寸均匀增大，所述第二端至所述第三端的截面尺寸均匀增大，以使弯折后的所述连接部的截面尺寸均匀。
其中，弯折后的所述连接部的弧度不小于π，以使所述第一端部与所述第二端部的距离不大于所述连接部的弯折直径。
本申请的有益效果如下：连接部为灯丝的弯折部分，灯丝弯折后各部位(第一端部、第二端部、连接部)的截面尺寸相同，由于灯丝的阻值与灯丝的截面尺寸有关，灯丝截面尺寸均匀，灯丝各部位的阻值相同，灯丝通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝周围的等离子体浓度均匀，避免出现灯丝某部位附近等离子体浓度过高腐蚀灯丝，灯丝不易断裂，提高了灯丝的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1、图2及图3为本申请实施例一提供的灯丝弯折前的结构示意图。
图4为本申请实施例一提供的灯丝弯折后的结构示意图。
图5为本申请实施例一提供的灯丝的结构示意图。
图6和图7为本申请实施例二提供的灯丝弯折后的结构示意图。
图8为本申请实施例二提供的灯丝的结构示意图。
图9为本申请实施例提供的电离室的示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请实施例提供的灯丝应用于离子植入设备，离子植入设备是集成电路制造前工序中的关键设备，离子注入是对半导体表面附近区域进行掺杂的技术，其目的是改变半导体的载流子浓度和导电类型。离子植入与常规热掺杂工艺相比可对注入剂量、注入角度、注入深度、横向扩散等方面进行精确的控制，克服了常规工艺的限制，提高了电路的集成度、开启速度、成品率和寿命，降低了成本和功耗。离子植入设备广泛用于掺杂工艺，可以满足浅结、低温和精确控制等要求，已成为集成电路制造工艺中必不可少的关键装备。进一步的，本申请实施例提供的电离室及离子植入设备可以应用于显示设备的低温多晶硅薄膜晶体管和有机发光二极管的制程中，即植入等离子体于玻璃基板表面。
请一并参阅图1、图2、图3及图4，本申请实施例一提供的灯丝100包括第一端部10、第二端部20及连接部30，连接部30位于第一端部10与第二端部20之间，并连接第一端部10与第二端部20。第一端部10和第二端部20用于电连接至供电器件，一种实施方式中，第一端部10背离连接部30的一端设有连接头，用于接入供电设备，第二端部20背离连接部30的一端也设有连接头，用于接入供电设备，从而使灯丝100与供电设备串联，供电设备向灯丝100输入电流流经灯丝100以产生热电子。第一端部10通过连接部30相对第二端部20弯折，具体的，第一端部10与第二端部20对称弯折，弯折的灯丝100一方面可以节省灯丝100的体积，另一方面提高单位空间产生的等离子体的浓度。进一步的，弯折的连接部30的截面尺寸与第一端部10及第二端部20的截面尺寸相同，即灯丝100各部位的截面尺寸均相同，灯丝100截面尺寸均匀。一种较佳的实施方式中， 灯丝100的截面形状为圆形，其他实施方式中，灯丝100的截面形状也可以为椭圆形、矩形等形状。
本实施例中，在灯丝100弯折前，连接部30的截面尺寸大于第一端部10及第二端部20的截面尺寸。具体的，弯折前，第一端部10的截面尺寸和第二端部20的截面尺寸相同，连接部30包括主体部32与凸起部34，主体部32连接于第一端部10与第二端部20之间，并且主体部32的截面尺寸与第一端部10及第二端部20的截面尺寸相同，凸起部34凸设于主体部32的截面尺寸方向的表面上，由于凸起部34自身的截面尺寸增大了连接部30的截面尺寸，使连接部30的截面尺寸大于第一端部10的截面尺寸和第二端部20的截面尺寸，以在连接部30弯折后连接部30大于第一端部10及第二端部20的余量(即凸起部34的截面尺寸)补偿连接部30弯折的压缩量，从而使弯折后的连接部30的截面尺寸与第一端部10及第二端部20的截面尺寸相等。进一步的，连接部30包括相对的第一侧与第二侧，第一端部10和第二端部20向第一侧相对弯折，即第一侧为连接部30在弯折时被压缩的一侧，第二侧为连接部30在弯折时被拉伸的一侧，凸起部34可以位于第一侧(如图1所示)，也可以位于第二侧(如图2所示)，或者在第一侧和第二侧均设凸起部34(如图3所示)。
连接部30为灯丝100的弯折部分，灯丝100弯折后各部位(第一端部10、第二端部20、连接部30)的截面尺寸相同，由于灯丝100的阻值与灯丝100的截面尺寸有关，灯丝100截面尺寸均匀，灯丝100各部位的阻值相同，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
本实施例中，弯折前第一端部10至连接部30的截面尺寸均匀增大，弯折前第二端部20至连接部30的截面尺寸均匀增大。具体的，凸起部34包括第一端342、第二端344及位于第一端342与第二端344之间的第三端346，第一端342凸设于主体部32连接第一端部10的一端，第二端344凸设于主体部32连接第二端部20的一端，弯折前第一端342至第三端346的截面尺寸均匀增大，第二端344至第三端346的截面尺寸均匀增大，以使弯折后的连接部30的截面尺寸均匀。进一 步的，连接部30的截面尺寸为灯丝100整体截面尺寸最大处，连接部30的截面尺寸向第一端部10均匀减小，截面尺寸变化均匀过渡，连接部30的截面尺寸向第二端部20均匀减小，截面尺寸变化均匀过渡。由于弯折部越靠近弯折中心的位置在弯折后截面尺寸缩小量越大，从弯折中心向第一端部10和第二端部20方向延伸的灯丝100的截面尺寸的弯折缩小量均匀减小，截面尺寸均匀过渡的灯丝100可以对应补偿灯丝100弯折时各部位的缩小量，从而使连接部30与第一端部10及第二端部20的截面尺寸相同，灯丝100整体截面尺寸均匀，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
结合图5，本实施例中，第一端部10、连接部30及第二端部20依次相连形成弯折单元200，灯丝100包括多个灯丝100单元，每个灯丝100单元的第一端部10固定连接相邻的灯丝100单元的第二端部20，每个灯丝100单元的第二端部20固定连接相邻的灯丝100单元的第一端部10。具体的，相连的多个灯丝100单元，仅有边缘的灯丝100单元的第一端部10和第二端部20设有连接头，用于接入供电设备，从而使灯丝100与供电设备串联，供电设备向灯丝100输入电流流经灯丝100以产生热电子。各灯丝100单元相互串联，供电设备向灯丝100输出电流，同时控制流经各灯丝100单元的电源，即同时控制各灯丝100单元产生的热电子的量。进一步的，各灯丝100单元为相同的灯丝100单元，即各灯丝100单元的阻值相同，从而使各灯丝100单元产生的热电子均匀，对应产生的等离子体的浓度均匀。多个弯折的灯丝100单元串联提高了等离子体的产生量，也避免了灯丝100整体尺寸过大。
本实施例中，相邻的两个灯丝100单元的连接部30的弯折方向相反。具体的，以两个相连的灯丝100单元为例，将两个该灯丝100单元分别称为第一灯丝100单元与第二灯丝100单元，第一灯丝100单元的第二端部20连接第二灯丝100单元的第一端部10，第一灯丝100单元的第一端部10相对第二端部20的弯折方向与第二灯丝100单元的第二端部20相对第一端部10的弯折方向相反，提高了等离子体的产生量，也避免了灯丝100整体尺寸过大。
本实施例中，第一端部10、第二端部20及连接部30一体成型，具体的，灯丝100可以先制成条状后再弯折形成，制作方式简单。
进一步的，灯丝100为金属材料制成，一种较佳的实施方式中，灯丝100为钨丝。金属材料成本低，且能够满足产生热电子的要求。
连接部30为灯丝100的弯折部分，灯丝100弯折后各部位(第一端部10、第二端部20、连接部30)的截面尺寸相同，由于灯丝100的阻值与灯丝100的截面尺寸有关，灯丝100截面尺寸均匀，灯丝100各部位的阻值相同，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
请参阅图6和图7，本申请实施例二提供的灯丝100在连接部30弯折，连接部的弧度不小于π，弯折后的第一端部10与第二端部20的距离a不大于连接部30的弯折直径b。一种实施方式中，弯折后的第一端部10与第二端部20的距离a小于连接部30的弯折直径b(如图6所示)，其他实施方式中，弯折后的第一端部10与第二端部20的距离a等于连接部30的弯折直径b(如图7所示)。连接部30为灯丝100的弯折部分，灯丝100弯折后各部位(第一端部10、第二端部20、连接部30)的截面尺寸相同，由于灯丝100的阻值与灯丝100的截面尺寸有关，灯丝100截面尺寸均匀，灯丝100各部位的阻值相同，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
结合图8，本实施例中，第一端部10、连接部30及第二端部20依次相连形成弯折单元200，灯丝100包括多个灯丝100单元，每个灯丝100单元的第一端部10固定连接相邻的灯丝100单元的第二端部20，每个灯丝100单元的第二端部20固定连接相邻的灯丝100单元的第一端部10。具体的，相连的多个灯丝100单元，仅有边缘的灯丝100单元的第一端部10和第二端部20设有连接头，用于接入供电设备，从而使灯丝100与供电设备串联，供电设备向灯丝100输入电流流经灯 丝100以产生热电子。各灯丝100单元相互串联，供电设备向灯丝100输出电流，同时控制流经各灯丝100单元的电源，即同时控制各灯丝100单元产生的热电子的量。进一步的，各灯丝100单元为相同的灯丝100单元，即各灯丝100单元的阻值相同，从而使各灯丝100单元产生的热电子均匀，对应产生的等离子体的浓度均匀。多个弯折的灯丝100单元串联提高了等离子体的产生量，也避免了灯丝100整体尺寸过大。
本实施例中，相邻的两个灯丝100单元的连接部30的弯折方向相反。具体的，以两个相连的灯丝100单元为例，将两个该灯丝100单元分别称为第一灯丝100单元与第二灯丝100单元，第一灯丝100单元的第二端部20连接第二灯丝100单元的第一端部10，第一灯丝100单元的第一端部10相对第二端部20的弯折方向与第二灯丝100单元的第二端部20相对第一端部10的弯折方向相反，提高了等离子体的产生量，也避免了灯丝100整体尺寸过大。
本实施例中，第一端部10、第二端部20及连接部30一体成型，具体的，灯丝100可以先制成条状后再弯折形成，制作方式简单。
进一步的，灯丝100为金属材料制成，一种较佳的实施方式中，灯丝100为钨丝。金属材料成本低，且能够满足产生热电子的要求。
连接部30为灯丝100的弯折部分，灯丝100弯折后各部位(第一端部10、第二端部20、连接部30)的截面尺寸相同，由于灯丝100的阻值与灯丝100的截面尺寸有关，灯丝100截面尺寸均匀，灯丝100各部位的阻值相同，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
本申请的实施例还提供一种电离室，如图7所示。本申请实施例提供的电离室应用于离子植入设备，电离室包括腔体400、送气管500及以上所述的灯丝100，送气管500和灯丝100位于腔体400内，灯丝100通过供电设备300通电时产生热电子，送气管500用于输出离子源气体，离子源气体撞击热电子，以产生等离子体。具体的，腔体400为多个壁面相连后围成的封闭空间，用于提供离子源气体与热电子碰撞产生等离子体的环境。送气管500位于腔体400内，送气 管500与提供离子源气体的供气设备相连通，供气设备通过送气管500向腔体400内输出离子源气体。灯丝100也位于腔体400内，具体的，灯丝100为金属丝，一种较佳的实施方式中，灯丝100为钨丝。送气管500输出离子源气体与灯丝100产生的热电子碰撞产生等离子体植入至基板600，实现离子植入。
连接部30为灯丝100的弯折部分，灯丝100弯折后各部位(第一端部10、第二端部20、连接部30)的截面尺寸相同，由于灯丝100的阻值与灯丝100的截面尺寸有关，灯丝100截面尺寸均匀，灯丝100各部位的阻值相同，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
本申请实施例还提供一种离子植入设备，用于将等离子体植入与半导体器件，离子植入设备包括以上所述的灯丝100。连接部30为灯丝100的弯折部分，灯丝100弯折后各部位(第一端部10、第二端部20、连接部30)的截面尺寸相同，由于灯丝100的阻值与灯丝100的截面尺寸有关，灯丝100截面尺寸均匀，灯丝100各部位的阻值相同，灯丝100通电后各部位产生的热电子数量相同，热电子与离子源气体撞击产生等离子体，灯丝100周围的等离子体浓度均匀，避免出现灯丝100某部位附近等离子体浓度过高腐蚀灯丝100，灯丝100不易断裂，提高了灯丝100的寿命，降低了离子植入设备的维护成本和显示设备的生产成本。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易的想到各种等效的修改或替换，这些修改或替换都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以权利要求的保护范围为准。

Claims (20)

  1. 一种灯丝，应用于离子植入设备，其中，所述灯丝包括第一端部、第二端部及位于所述第一端部与所述第二端部之间的连接部，所述第一端部和所述第二端部用于电连接至供电器件，所述第一端部通过所述连接部相对所述第二端部弯折，并且弯折的所述连接部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同。
  2. 根据权利要求1所述的灯丝，其中，所述连接部包括主体部与凸起部，所述主体部连接于所述第一端部与所述第二端部之间，并且所述主体部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同，所述凸起部凸设于所述主体部的截面尺寸方向的表面上，以使弯折前的所述连接部的截面尺寸大于所述第一端部及所述第二端部的截面尺寸，弯折后的所述连接部的截面尺寸等于所述第一端部及所述第二端部的截面尺寸。
  3. 根据权利要求2所述的灯丝，其中，所述凸起部包括第一端、第二端及位于所述第一端与所述第二端之间的第三端，所述第一端凸设于所述主体部连接所述第一端部的一端，所述第二端凸设于所述主体部连接所述第二端部的一端，弯折前所述第一端至所述第三端的截面尺寸均匀增大，所述第二端至所述第三端的截面尺寸均匀增大，以使弯折后的所述连接部的截面尺寸均匀。
  4. 根据权利要求1所述的灯丝，其中，弯折后的所述连接部的弧度不小于π，以使所述第一端部与所述第二端部的距离不大于所述连接部的弯折直径。
  5. 根据权利要求4所述的灯丝，其中，所述第一端部、所述连接部及所述第二端部依次相连形成弯折单元，所述灯丝包括多个所述灯丝单元，每个所述灯丝单元的所述第一端部固定连接相邻的所述灯丝单元的所述第二端部，每个所述灯丝单元的所述第二端部固定连接相邻的所述灯丝单元的所述第一端部。
  6. 根据权利要求5所述的灯丝，其中，相邻的两个所述灯丝单元的连接部的弯折方向相反。
  7. 根据权利要求6所述的灯丝，其中，所述第一端部、所述第二端部及所述连接部一体成型。
  8. 根据权利要求7所述的灯丝，其中，所述灯丝为钨丝。
  9. 一种电离室，应用于离子植入设备，其中，所述电离室包括腔体、送气 管及灯丝，所述送气管和所述灯丝位于所述腔体内，所述灯丝通电时产生热电子，所述送气管用于输出离子源气体，所述离子源气体撞击所述热电子，以产生等离子体，所述灯丝包括第一端部、第二端部及位于所述第一端部与所述第二端部之间的连接部，所述第一端部和所述第二端部用于电连接至供电器件，所述第一端部通过所述连接部相对所述第二端部弯折，并且弯折的所述连接部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同。
  10. 根据权利要求9所述的电离室，其中，所述连接部包括主体部与凸起部，所述主体部连接于所述第一端部与所述第二端部之间，并且所述主体部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同，所述凸起部凸设于所述主体部的截面尺寸方向的表面上，以使弯折前的所述连接部的截面尺寸大于所述第一端部及所述第二端部的截面尺寸，弯折后的所述连接部的截面尺寸等于所述第一端部及所述第二端部的截面尺寸。
  11. 根据权利要求10所述的电离室，其中，所述凸起部包括第一端、第二端及位于所述第一端与所述第二端之间的第三端，所述第一端凸设于所述主体部连接所述第一端部的一端，所述第二端凸设于所述主体部连接所述第二端部的一端，弯折前所述第一端至所述第三端的截面尺寸均匀增大，所述第二端至所述第三端的截面尺寸均匀增大，以使弯折后的所述连接部的截面尺寸均匀。
  12. 根据权利要求9所述的电离室，其中，弯折后的所述连接部的弧度不小于π，以使所述第一端部与所述第二端部的距离不大于所述连接部的弯折直径。
  13. 根据权利要求12所述的电离室，其中，所述第一端部、所述连接部及所述第二端部依次相连形成弯折单元，所述灯丝包括多个所述灯丝单元，每个所述灯丝单元的所述第一端部固定连接相邻的所述灯丝单元的所述第二端部，每个所述灯丝单元的所述第二端部固定连接相邻的所述灯丝单元的所述第一端部。
  14. 根据权利要求13所述的电离室，其中，相邻的两个所述灯丝单元的连接部的弯折方向相反。
  15. 根据权利要求14所述的电离室，其中，所述第一端部、所述第二端部及所述连接部一体成型。
  16. 根据权利要求15所述的电离室，其中，所述灯丝为钨丝。
  17. 一种离子植入设备，其中，所述离子植入设备包括灯丝，所述灯丝包括第一端部、第二端部及位于所述第一端部与所述第二端部之间的连接部，所述第一端部和所述第二端部用于电连接至供电器件，所述第一端部通过所述连接部相对所述第二端部弯折，并且弯折的所述连接部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同。
  18. 根据权利要求17所述的离子植入设备，其中，所述连接部包括主体部与凸起部，所述主体部连接于所述第一端部与所述第二端部之间，并且所述主体部的截面尺寸与所述第一端部及所述第二端部的截面尺寸相同，所述凸起部凸设于所述主体部的截面尺寸方向的表面上，以使弯折前的所述连接部的截面尺寸大于所述第一端部及所述第二端部的截面尺寸，弯折后的所述连接部的截面尺寸等于所述第一端部及所述第二端部的截面尺寸。
  19. 根据权利要求18所述的离子植入设备，其中，所述凸起部包括第一端、第二端及位于所述第一端与所述第二端之间的第三端，所述第一端凸设于所述主体部连接所述第一端部的一端，所述第二端凸设于所述主体部连接所述第二端部的一端，弯折前所述第一端至所述第三端的截面尺寸均匀增大，所述第二端至所述第三端的截面尺寸均匀增大，以使弯折后的所述连接部的截面尺寸均匀。
  20. 根据权利要求17所述的离子植入设备，其中，弯折后的所述连接部的弧度不小于π，以使所述第一端部与所述第二端部的距离不大于所述连接部的弯折直径。
PCT/CN2017/094414 2017-06-26 2017-07-26 灯丝、电离室及离子植入设备 Ceased WO2019000533A1 (zh)

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