WO2019000316A1 - Single-photon source device and single-photon emission method and system - Google Patents

Abstract

A single-photon source device, comprising: a photonic crystal slab (101) and a photon conversion module (102). The photon conversion module (102) is coupled to the photonic crystal slab (101), and the photon conversion module (102) comprises a silicon carbide color center (1021) and an L3-type photonic crystal microcavity (1022), the silicon carbide color center (1021) being disposed in the L3-type photonic crystal microcavity (1022). The photonic crystal slab (101) has a first path (1011) and a second path (1012). The first path (1011) is used to receive pump light, and the photon conversion module (102) is used to convert the pump light into photoluminescence (PL) light. The second path (1012) is used to emit the PL light. A single-photon emission method and communication system can collect pump light and PL light in the same plane. Using the device to design or manufacture devices, such as an optical chip, effectively reduces the size of the devices and lowers integration difficulty, thereby improving functionality.

Description

Single photon source device, single photon emission method and system Technical field

The present application relates to the field of semiconductor light sources, and more particularly to a single photon source device, a single photon emission method and system.

Background technique

Single photon sources are widely used in quantum communication and quantum computing. Current single photon sources can be classified into non-deterministic single photon sources and deterministic single photon sources. The ideal single-photon source should be a deterministic single-photon source, which releases an indistinguishable single photon with a probability of 100% at the moment the user needs it. Deterministic single photon sources can be further divided into ensemble systems (such as atomic gas ensembles such as helium or neon) and single emitter systems (single atoms, single ions, single molecules, quantum dots or color centers). The integrated design of on-chip quantum communication and quantum computing requires on-chip scalability and integration. Among the many deterministic single photon systems, only self-organized quantum dots and color center systems can achieve better scalability and integration.

At present, a single photon source device applied to an electronic device has been designed to improve signal transmission efficiency. Please refer to FIG. 1. FIG. 1 is a schematic structural view of an optically pumped single photon source device in the prior art, and the pump light is For incident light, photoluminescence (PL) is the outgoing light, and the pump light is emitted through the photonic crystal, thereby frequency-converting the signal to generate a single photon source in the communication band.

In practical applications, devices such as optical chips can be fabricated using a single photon source device. However, since the optically pumped single photon source devices currently used are not integrated in-plane, that is, pump light and PL light cannot be collected in the same plane, which results in the volume of devices such as optical chips manufactured. Larger and more difficult to integrate.

Summary of the invention

The embodiment of the present application provides a single photon source device, a single photon emission method and system, which can collect pump light and PL light in the same plane, and design or manufacture an optical chip and the like by using the device, which can effectively Reduce the size of the device to improve the usability of the solution.

A first aspect of the present application provides a single photon source device, including: a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled to the photonic crystal plate, and the photon conversion module includes a silicon carbide color center and an L3 photonic crystal. The microcavity and the silicon carbide color center are disposed in the L3 type photonic crystal microcavity. According to the structural characteristics of the photonic crystal plate, the silicon carbide color center and the L3 type photonic crystal microcavity, the three can be coupled together.

Furthermore, there is a first path and a second path on the photonic crystal plate, wherein the first path is for receiving pump light, the photon conversion module is for converting pump light into PL light, and the second path is for transmitting PL Light.

In the technical solution provided by the embodiment of the present application, a single photon source device is provided, which mainly includes a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled with the photonic crystal plate, and the photon conversion module includes a silicon carbide color center and L3. a photonic crystal microcavity, the silicon carbide color center is disposed in the L3 type photonic crystal microcavity, the photonic crystal plate has a first path and a second path, and the first path is for receiving the pump light through the first photonic crystal waveguide, the photon A transform module is used to convert the pump light into PL light, and a second path is used to emit PL light through the second photonic crystal waveguide, and the PL light continuously outputs a single photon. With the above device, it is possible to collect pump light and PL light in the same plane, and design with the device Or manufacturing a device such as an optical chip can effectively reduce the size of the device and reduce the difficulty of integration, thereby improving the practicability of the solution.

In a possible design, in a first implementation manner of the first aspect of the embodiment of the present application, the first path is specifically used to receive the pump light by using the first photonic crystal waveguide, and the second path is specifically used to adopt The second photonic crystal waveguide emits PL light, wherein the first photonic crystal waveguide and the second photonic crystal waveguide have different frequencies.

Waveguides are used to orient the structure of guided electromagnetic waves. Waveguides are primarily used as transmission lines for microwave frequencies and are used in microwave ovens, radars, communications satellites, and microwave radio link devices to connect microwave transmitters and receivers to their antennas.

Secondly, in the embodiment of the present application, it is explained that the first photonic crystal waveguide can receive the pump light, and the second photonic crystal waveguide is used to emit the PL light, and the two have different frequencies, and can be frequency according to the requirement of the communication band. Adjustments to enhance the flexibility of the program.

In a possible design, in the second implementation manner of the first aspect of the embodiment of the present application, the silicon carbide color center may also be a double vacancy defect pair Ky5 type color center, a carbon substitution-vacancy defect pair CsiVc type. Color center or silicon vacancy defect Vsi color center and so on. The Ky5 type refers to a specific type of defect, and the communication band of the Ky5 type color center is 1100 nm to 1300 nm. The PL spectrum of the Ky5 color center has a wavelength range of 1100 nm to 1300 nm. The CsiVc color center corresponds to a PL spectrum having a wavelength ranging from 640 nm to 680 nm, and the Vsi type color center corresponds to a PL spectrum having a wavelength ranging from 850 nm to 950 nm.

Secondly, in the embodiment of the present application, different types of silicon carbide color centers are introduced, and the corresponding types of silicon carbide color centers can be selected according to the requirements of different PL spectrum wavelengths, thereby better adapting to the communication scene, thereby improving the scheme. Practicality and feasibility.

In a possible design, in a third implementation manner of the first aspect of the embodiment of the present application, the photonic crystal plate usually includes a plurality of air holes, and the shape of the air holes may be rectangular or circular. .

The rectangular air hole may also be a square air hole, and the quality factor, mode volume and resonant frequency of the square air hole L3 type photonic crystal microcavity are calculated by a finite time domain difference method. The circular air hole may be an oval air hole or an elliptical air hole.

Again, in the embodiment of the present application, the shape of the air hole is introduced, which may be a rectangular air hole, a circular air hole, or an air hole obtained by combining the two. In the above manner, the diversity of photonic crystal plate fabrication can be increased and adapted to different application scenarios.

In a possible design, in a fourth implementation of the first aspect of the embodiments of the present application, the air holes are circular air holes.

The air hole on the photonic crystal plate is a circular air hole, and the circular air hole corresponds to a lattice constant of a, and a can be 550 nm. The lattice constant refers to the distance between the center of the first circular air hole and the center of the second circular air hole, and the first circular air hole and the second circular air hole have an adjacent relationship, and the circular air hole has an adjacent relationship The radius is 0.29a, and the third circular air hole offset at one end of the L3 photonic crystal microcavity is 0.21a, and the fourth circular air hole offset at the other end of the L3 photonic crystal microcavity is 0.21a, and The radius of the third circular air hole and the fourth circular air hole is 0.12a.

Thirdly, in the embodiment of the present application, the layout of a plurality of air holes on the photonic crystal plate in the single photon source device and the shape of the air holes are described. Through the above manner, a single photon source device structure with practicality and operability can be introduced, thereby improving the feasibility of the scheme.

In a possible design, in a fifth implementation manner of the first aspect of the embodiments of the present application, the silicon carbide color center has a refractive index of 2.5, and the silicon carbide color center has a thickness ranging from greater than or equal to 150 nanometers, and Less than or equal to 350 nanometers.

Further, in the embodiment of the present application, a specification that can be adopted for the silicon carbide color center is described, that is, a silicon carbide color center having a refractive index of 2.5 is used, and the thickness of the silicon carbide color center needs to be between 150 nm and 350 nm. In the above way, the feasibility of the solution can be improved.

A second aspect of the embodiments of the present application provides a method for single photon emission, the method being applied to a single photon source device, the single photon source device comprising a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled to the photonic crystal plate, The photon conversion module comprises a silicon carbide color center and an L3 type photonic crystal microcavity, wherein the silicon carbide color center is disposed in the L3 type photonic crystal microcavity, the photonic crystal plate has a first path and a second path, and the single photon source device passes the first The path receives the pump light, then converts the pump light into photo-induced PL light, and finally can emit PL light through the second path, and the PL light can continuously emit a plurality of single photons.

In the technical solution provided by the embodiment of the present application, a single photon emission method is provided. First, a single photon source device receives pump light through a first path, then converts the pump light into PL light, and finally transmits through the second path. PL light, PL light comprises a plurality of single photon single photon source devices including a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled with the photonic crystal plate, and the photon conversion module comprises a silicon carbide color center and an L3 photonic crystal microcavity. The silicon carbide color center is disposed in the L3 type photonic crystal microcavity, and the photonic crystal plate has a first path and a second path. In the above manner, it is possible to collect pump light and emit PL light in the same plane, and design or manufacture a device such as an optical chip by using the device, which can effectively reduce the volume of the device, thereby improving the practicability of the solution.

In a possible design, in a first implementation manner of the second aspect of the embodiment of the present application, the single photon source device receiving the pump light through the first path may include:

The single photon source device receives the pump light through the first path by using the first photonic crystal waveguide;

The single photon source device transmitting the PL light through the second path may include:

The single photon source device receives the pump light through a first path using a second photonic crystal waveguide, wherein the first photonic crystal waveguide and the second photonic crystal waveguide have different frequencies.

In a possible design, in the second implementation manner of the second aspect of the embodiment of the present application, the silicon carbide color center may also be a Ky5-type color center, a CsiVc-type color center, or a Vsi-type color center.

In a possible design, in a third implementation manner of the second aspect of the embodiments of the present application, the photonic crystal plate comprises a plurality of air holes, and the air holes comprise at least one of a rectangular air hole and a circular air hole. .

In a possible design, in a fourth implementation manner of the second aspect of the embodiments of the present application, the air hole is a circular air hole, the circular air hole corresponds to a lattice constant of a, and the lattice constant is The distance between the center of a circular air hole and the center of the second circular air hole, the first circular air hole and the second circular air hole have an adjacent relationship, and the radius of the circular air hole is 0.29a, L3 type The third circular air hole offset at one end of the photonic crystal microcavity is 0.21a, and the fourth circular air hole offset at the other end of the L3 photonic crystal microcavity is 0.21a, and the third circular air hole and the third The radius of the four circular air holes is 0.12a.

In a possible design, in a fifth implementation manner of the second aspect of the embodiments of the present application, the silicon carbide color center has a refractive index of 2.5, and the silicon carbide color center has a thickness ranging from greater than or equal to 150 nanometers, and Less than or equal to 350 nanometers.

A third aspect of the embodiments of the present application provides a communication system, including the single photon source of any one of the foregoing first aspects. Device.

A fourth aspect of an embodiment of the present application provides a computer readable storage medium having stored therein instructions that, when executed on a computer, cause the computer to perform the methods described in the above aspects.

In addition, the technical effects brought by the design mode of any one of the second aspect to the fifth aspect can be referred to the technical effects brought by different design modes in the first aspect, and details are not described herein again.

In the technical solution provided by the embodiment of the present application, a single photon source device is provided, which mainly includes a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled with the photonic crystal plate, and the photon conversion module includes a silicon carbide color center and L3. a photonic crystal microcavity, the silicon carbide color center is disposed in the L3 type photonic crystal microcavity, the photonic crystal plate has a first path and a second path, and the first path is used to receive pump light through the first photonic crystal waveguide, the photon The transform module is for converting pump light into PL light, and the second path is for emitting PL light through the second photonic crystal waveguide, and the PL light can continuously output a plurality of single photons. By adopting the above device, pump light and PL light can be collected in the same plane, and devices such as optical chips can be designed or manufactured by using the device, which can effectively reduce the volume of the device and reduce the difficulty of integration, thereby improving the practicability of the solution. .

DRAWINGS

1 is a schematic structural view of an optically pumped single photon source device in the prior art;

2 is a schematic structural diagram of a single photon source device according to an embodiment of the present application;

3 is another schematic structural diagram of a single photon source device according to an embodiment of the present application;

4 is an optical frequency comb based on a photonic crystal in the embodiment of the present application;

FIG. 5 is a schematic structural diagram of a model of a single photon source device according to an embodiment of the present application; FIG.

6 is a schematic diagram of simulation results of spectrum resonance in an embodiment of the present application;

7 is a schematic flow chart of processing a silicon carbide color center in an embodiment of the present application;

FIG. 8 is a schematic diagram of an embodiment of a method for single photon emission in an embodiment of the present application.

Detailed ways

The embodiment of the present application provides a single photon source device, a single photon emission method and system, which can collect pump light and PL light in the same plane, and design or manufacture an optical chip and the like by using the device, which can effectively Reduce the size of the device to improve the usability of the solution.

The technical solutions in the embodiments of the present application are clearly and completely described in the following with reference to the drawings in the embodiments of the present application. It is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments.

The terms "first", "second", "third", "fourth", etc. (if present) in the specification and claims of the present application and the above figures are used to distinguish similar objects without having to use To describe a specific order or order. It is to be understood that the data so used may be interchanged where appropriate so that the embodiments described herein can be implemented in a sequence other than what is illustrated or described herein. In addition, the terms "comprises" and "comprises" and "the" and "the" are intended to cover a non-exclusive inclusion, for example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to Those steps or units may include other steps or units not explicitly listed or inherent to such processes, methods, products or devices.

It should be understood that the single photon source device in the present scheme adopts a photonic crystal, and the photonic crystal periodically aligns the dielectric materials of different dielectric constants to periodically distribute the refractive index of the light, thereby realizing a photonic band gap similar to the semiconductor forbidden band. It can enhance or suppress spontaneous emission and achieve powerful control of light propagation behavior (such as directional selection or wavelength selection). By combining photonic crystal technology with single photon source technology, the direction and wavelength of photon emission from a single photon source can be effectively controlled.

The application range of photonic crystals should be very extensive. The photonic crystal has the basic property of photonic band gap, which can be used as a photonic crystal total reflection mirror and a very low loss three-dimensional photonic crystal antenna. The use of photonic band gaps to suppress the spontaneous emission of atoms can greatly reduce the probability of recombination due to spontaneous transitions, and design and produce thresholdless lasers and photonic crystal laser diodes. High-performance photonic crystal optical filters, single-frequency optical total mirrors, and photonic crystal optical waveguides can be fabricated by introducing defects into the photonic crystal to produce a very narrow frequency defect state in the photonic band gap. If a point defect is introduced, a photonic crystal cavity of high quality factor can be fabricated.

With the various properties of photonic crystals, there are other wider applications. It should be noted that the single photon source device of the present application can be used to make optical switches, optical amplifiers and optical concentrators, and can also manufacture some new types. Optical devices are not limited here.

Please refer to FIG. 2. FIG. 2 is a schematic structural diagram of a single photon source device according to an embodiment of the present application. As shown, the single photon source device includes a photonic crystal plate 101 and a photon conversion module 102, wherein the photon conversion module 102 and the photon are included. The crystal plate 101 is coupled, and the photon conversion module 102 includes a silicon carbide color center 1021 and an L3 type photonic crystal microcavity 1022, and the silicon carbide color center 1021 is disposed in the L3 type photonic crystal microcavity 1022;

The photonic crystal plate 101 has a first path 1011 and a second path 1012;

The first path 1011 is for receiving pump light, the photon conversion module 102 is for converting pump light into PL light, and the second path 1012 is for emitting PL light, the PL light comprising a plurality of single photons.

In this embodiment, the three can be coupled together according to the structural characteristics of the photonic crystal plate 101, the silicon carbide (SiC) color center 1021 and the L3 type photonic crystal microcavity 1022. The SiC color center 1021 may be a Ky5 type color center, and the Ky5 type refers to a specific defect type. The Ky5 type color center has a PL spectrum wavelength ranging from 1100 nm to 1300 nm.

It can be understood that the SiC color center 1021 can also be a CsiVc color center or a Vsi color center. The CsiVc color center corresponds to a PL spectrum having a wavelength range of 640 nm to 680 nm, and the Vsi type color center corresponds to a PL spectrum wavelength range. From 850 nm to 950 nm.

Among them, the color center refers to a point defect or a point defect pair in the crystal. A typical point defect is the loss of a particular atom of the crystal, and another point defect is that a particular atom in the crystal is replaced by another atom. The CsiVc type color center is in the C-Si pairing, the Si position is replaced by C, and the C position is deleted. The Si site in the Vsi color center is missing.

There are a plurality of air holes on the photonic crystal plate 101, and the portion without the air holes forms two paths, that is, the first path 1011 and the second path 1012, and the pump light is received through the first photonic crystal waveguide 103, wherein the first photon The crystal waveguide 103 needs to pass through the first path 1011. The PL light is then emitted through the second photonic crystal waveguide 104, wherein the second photonic crystal waveguide 104 needs to pass through the second path 1012. The first photonic crystal waveguide 103 and the second photonic crystal waveguide 104 have different frequencies, and the frequency of the first photonic crystal waveguide 103 is larger than the frequency of the second photonic crystal waveguide 104.

Waveguides are used to orient the structure of guided electromagnetic waves. Waveguides are primarily used as transmission lines for microwave frequencies and are used in microwave ovens, radars, communications satellites, and microwave radio link devices to connect microwave transmitters and receivers to their antennas. Often The waveguide structures seen mainly include parallel double conductors, coaxial lines, parallel slab waveguides, rectangular waveguides, circular waveguides, microstrip lines, slab dielectric optical waveguides, and optical fibers. From the perspective of guiding electromagnetic waves, they can be divided into internal regions and external regions, and electromagnetic waves are confined to internal regions to propagate.

It should be noted that the structure of the single photon source device shown in FIG. 2 is only one schematic. Similarly, reference may also be made to FIG. 3. FIG. 3 is another schematic structural diagram of a single photon source device according to an embodiment of the present application. There are also a plurality of different single photon source device structures in the single photon source device shown in FIG. 2 or FIG. 3, which are not enumerated here.

The photonic crystal waveguide can be coupled with the photonic crystal microcavity. By adjusting the lattice constant, the frequency comb of the light is realized, and the light of the specified wavelength is output. Please refer to FIG. 4. FIG. 4 is an optical frequency comb based on a photonic crystal according to an embodiment of the present application. The optical frequency comb (OFC) refers to a series of frequency components uniformly spaced and having a coherent stable phase relationship in the spectrum. The spectrum of the composition. With the rapid development of optical communication technology, OFC has attracted more and more attention due to its wide application in the fields of optical arbitrary waveform generation, multi-wavelength ultrashort pulse generation and dense wavelength division multiplexing.

In the technical solution provided by the embodiment of the present application, a single photon source device is provided, which mainly includes a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled with the photonic crystal plate, and the photon conversion module includes a silicon carbide color center and L3. a photonic crystal microcavity, the silicon carbide color center is disposed in the L3 type photonic crystal microcavity, the photonic crystal plate has a first path and a second path, and the first path is for receiving the pump light through the first photonic crystal waveguide, the photon A transform module is used to convert the pump light into PL light, and a second path is used to emit PL light through the second photonic crystal waveguide, the PL light comprising a plurality of single photons. By adopting the above device, it is possible to collect pump light and emit PL light in the same plane, and design or manufacture a device such as an optical chip by using the device, which can effectively reduce the volume of the device, thereby improving the practicability of the solution.

Optionally, in the first alternative embodiment of the single photon source device provided by the embodiment of the present application, the photonic crystal plate 101 includes a plurality of air holes, and the air holes include rectangular air. At least one of a hole and a circular air hole.

In this embodiment, the arrangement of the air holes on the photonic crystal plate 101 is specifically described. The air holes may be rectangular air holes or circular air holes.

Wherein, the rectangular air hole may specifically be a square air hole, and a finite-difference time-domain (FDTD) method is used to calculate a quality factor (Q value), a mode volume, and a square air hole L3 type photonic crystal microcavity. Resonant frequency.

For ease of introduction, please refer to FIG. 5. FIG. 5 is a schematic structural diagram of a single photon source device according to an embodiment of the present application. As shown in the figure, the air hole on the photonic crystal plate 101 is a circular air hole, and the circular air is The corresponding lattice constant of the hole is a, and a can be 550 nm. The lattice constant refers to the distance between the center of the first circular air hole and the center of the second circular air hole, and the first circular air hole and the second circular air hole have an adjacent relationship, and the circular air hole has an adjacent relationship The radius is 0.29a, and the third circular air hole offset at one end of the L3 photonic crystal microcavity 1022 is 0.21a, and the fourth circular air hole offset at the other end of the L3 photonic crystal microcavity 1022 is 0.21a. And the radius of the third circular air hole and the fourth circular air hole is 0.12a.

In addition, the refractive index of the SiC color center 1021 is 2.5. Generally, the thickness of the SiC color center 1021 ranges from 150 nm or more and less than or equal to 350 nm.

Using the above-mentioned SiC color center 1021 and L3 photonic crystal microcavity 1022, FDTD analysis is performed using a vector three-dimensional Maxwell's equation solving tool (Lumerical), and it is assumed that the SiC color center 1021 is a Ky5 type color center. As shown in the simulation results shown in FIG. 6, FIG. 6 is a schematic diagram of simulation results of spectral resonance in the embodiment of the present application. The L3 photonic crystal microcavity 1022 supports dual modes (wavelengths of 1.37 micrometers and 1.01 micrometers, respectively, conforming to SiC Ky5 color). The PL light of the heart and the wavelength range of the pump light) have a quality factor of approximately 15,000.

Next, in the embodiment of the present application, the layout of a plurality of air holes on the photonic crystal plate in the single photon source device and the shape of the air holes are described. With the above structure, an achievable single photon source device structure can be further provided on the premise that the single photon is received and transmitted in a plane, thereby improving the feasibility and flexibility of the scheme.

For ease of understanding, the silicon carbide color center processing method in the single photon source device will be described in detail below with reference to FIG. 7. Referring to FIG. 7, FIG. 7 is a schematic flowchart of processing a silicon carbide color center according to an embodiment of the present application, assuming The SiC color center is a Ky5 type color center, specifically:

In step 201, a silicon-silicon carbide (3C-SiC) wafer and a silicon (Si) wafer are obtained, and a SiC layer of a specified thickness is obtained by chemical mechanical planarization (CMP). CMP can be considered a hybrid chemical corrosion and abrasive polishing.

In step 202, a mask is formed, carbon (C) ions are implanted at a fixed point, and annealed. Ion implantation is a process of injecting charged and energetic particles into substrate silicon. The main benefit of ion implantation over diffusion processes is the ability to more accurately control impurity doping, repeatability, and lower process temperatures. High-energy ions lose energy due to collisions with electrons and nuclei in the substrate, and finally stop at a certain depth in the crystal lattice, and the average depth is controlled by adjusting the acceleration energy. The impurity dose can be controlled by monitoring the ion current during injection.

In step 203, aluminum (Al) and titanium (Ti) metals are deposited, and a hard film of the photonic crystal is formed using electron beam positive photoresist (ZEP) glue. The L1 layer in FIG. 7 is a conductive polymer layer, the L2 layer is a ZEP adhesive layer, the L3 layer is an Al and Ti metal layer, the L4 layer is a 3C-SiC layer, and the L5 layer is a Si layer.

In step 204, a photonic crystal pattern is formed by electron beam lithography (EBL).

In step 205, the conductive polymer layer is removed and the purpose of development is achieved.

In step 206, a hard film of Ti and Al is formed using boron trichloride (BCl ₃ ) or chlorine (Cl ₂ ), and then SiC is further etched with sulfur hexafluoride (SF ₆ ) to form a photonic crystal.

In step 207, the hard films of Ti and Al are removed.

In step 208, the underlying Si is etched using xenon difluoride (XeF ₂ ) to form a suspended photonic crystal structure, and finally SiC is etched by SF _{6 to} form a SiC layer of a specified thickness.

It can be understood that if the SiC color center is a CsiVc type color center or a Vsi color center, the manner of processing the silicon carbide color center needs to be adjusted.

The single-photon source device provided by the present application has been described in the foregoing embodiments and application scenarios. A specific implementation of the single-photon source device using the single-photon source device will be described below. Referring to FIG. 8, a method provided in the embodiment of the present application is provided. Examples of methods for single photon emission include:

301. The single photon source device receives pump light through a first path, the single photon source device includes a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled to the photonic crystal plate, and the photon conversion module includes a silicon carbide color center and an L3 type. a photonic crystal microcavity, the silicon carbide color center is disposed in the L3 type photonic crystal microcavity, and the photonic crystal plate has a first path and a second path;

In this embodiment, the single photon source device first receives the pump light through the first path.

Specifically, the photonic crystal plate has a plurality of air holes, and the portion without the air holes forms two paths, that is, the first path and the second path, and the single photon source device receives the pump light through the first photonic crystal waveguide, wherein The first photonic crystal waveguide needs to pass through the first path.

According to the structural characteristics of the photonic crystal plate, the SiC color center and the L3 type photonic crystal microcavity, the three can be coupled together. The SiC color center may be a Ky5 type color center, a CsiVc type color center or a Vsi color center, wherein the Ky5 type refers to a specific defect type.

302. The single photon source device converts the pump light into PL light;

In this embodiment, the single photon source device converts the pump light received in the plane into PL light through a photon conversion module composed of a SiC color center and an L3 type photonic crystal microcavity.

303. The single photon source device emits PL light through the second path.

In this embodiment, the single photon source device emits PL light through a second path, and the PL light includes a plurality of single photons.

Specifically, the single photon source device emits PL light through the second photonic crystal waveguide, wherein the second photonic crystal waveguide needs to pass through the second path. The first photonic crystal waveguide has a different frequency than the second photonic crystal waveguide, and the frequency of the first photonic crystal waveguide is greater than the frequency of the second photonic crystal waveguide.

In the technical solution provided by the embodiment of the present application, a single photon emission method is provided. First, a single photon source device receives pump light through a first path, then converts the pump light into PL light, and finally transmits through the second path. PL light, PL light comprises a plurality of single photon single photon source devices including a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled with the photonic crystal plate, and the photon conversion module comprises a silicon carbide color center and an L3 photonic crystal microcavity. The silicon carbide color center is disposed in the L3 type photonic crystal microcavity, and the photonic crystal plate has a first path and a second path. In the above manner, it is possible to collect pump light and emit PL light in the same plane, and design or manufacture a device such as an optical chip by using the device, which can effectively reduce the volume of the device, thereby improving the practicability of the solution.

Based on the above description of the single photon source device, and in conjunction with the description of the first embodiment corresponding to FIG. 2 and FIG. 2, the steps performed by the single photon emission method of the present application may be based on the single photon source described above. The device is not described here.

In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, it may be implemented in whole or in part in the form of a computer program product.

The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the processes or functions described in accordance with embodiments of the present application are generated in whole or in part. The computer can be a general purpose computer, a special purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer readable storage medium or transferred from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions can be from a website site, computer, server or data center Transmission to another website site, computer, server, or data center by wire (eg, coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (eg, infrared, wireless, microwave, etc.). The computer readable storage medium can be any available media that can be stored by a computer or a data storage device such as a server, data center, or the like that includes one or more available media. The usable medium may be a magnetic medium (eg, a floppy disk, a hard disk, a magnetic tape), an optical medium (eg, a DVD), or a semiconductor medium (such as a solid state disk (SSD)).

A person skilled in the art can clearly understand that, for the convenience and brevity of the description, the specific working process of the system, the device and the unit described above can refer to the corresponding process in the foregoing method embodiment, and details are not described herein again.

In the several embodiments provided by the present application, it should be understood that the disclosed system, apparatus, and method may be implemented in other manners. For example, the device embodiments described above are merely illustrative. For example, the division of the unit is only a logical function division. In actual implementation, there may be another division manner, for example, multiple units or components may be combined or Can be integrated into another system, or some features can be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interface, device or unit, and may be in an electrical, mechanical or other form.

The units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of the embodiment.

In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above integrated unit can be implemented in the form of hardware or in the form of a software functional unit.

The integrated unit, if implemented in the form of a software functional unit and sold or used as a standalone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application, in essence or the contribution to the prior art, or all or part of the technical solution may be embodied in the form of a software product stored in a storage medium. A number of instructions are included to cause a computer device (which may be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods described in various embodiments of the present application. The foregoing storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk, and the like, which can store program codes. .

The above embodiments are only used to explain the technical solutions of the present application, and are not limited thereto; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still The technical solutions described in the embodiments are modified, or the equivalents of the technical features are replaced by the equivalents. The modifications and substitutions of the embodiments do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims (13)

A single photon source device, comprising: a photonic crystal plate and a photon conversion module, wherein the photon conversion module is coupled to the photonic crystal plate, and the photon conversion module comprises a silicon carbide color center and an L3 photon a crystal microcavity, wherein the silicon carbide color center is disposed in the L3 type photonic crystal microcavity; The photonic crystal plate has a first path and a second path; The first path is for receiving pump light, the photon conversion module is for converting the pump light into photoluminescence PL, and the second path is for emitting the PL light. The single photon source device according to claim 1, wherein said first path is for receiving pump light using a first photonic crystal waveguide; The second path is for emitting the PL light using a second photonic crystal waveguide, wherein the first photonic crystal waveguide and the second photonic crystal waveguide have different frequencies. The single photon source device according to claim 1, wherein the silicon carbide color center is a double vacancy defect pair Ky5 type color center, a carbon substitution-vacancy defect pair CsiVc type color center or a silicon vacancy defect Vsi color center. . The single photon source device of claim 1 wherein said photonic crystal plate comprises a plurality of air holes, said air holes comprising at least one of a rectangular air hole and a circular air hole. The single photon source device according to claim 4, wherein the air hole is the circular air hole; The circular air hole corresponds to a lattice constant of a, and the lattice constant is a distance between a center of the first circular air hole and a center of the second circular air hole, the first circular air hole and the The second circular air hole has an adjacent relationship; The radius of the circular air hole is 0.29a; The third circular air hole offset of one end of the L3 type photonic crystal microcavity is 0.21a, and the fourth circular air hole offset of the other end of the L3 type photonic crystal microcavity is 0.21a, and the The radius of the third circular air hole and the fourth circular air hole is 0.12a. The single photon source device according to any one of claims 1 to 5, wherein the silicon carbide color center has a refractive index of 2.5, and the silicon carbide color center has a thickness ranging from 150 nm or more. And less than or equal to 350 nanometers. A method of single photon emission, characterized in that the method is applied to a single photon source device, the single photon source device comprising a photonic crystal plate and a photon conversion module, wherein the photon conversion module and the photonic crystal plate Coupling, the photon conversion module includes a silicon carbide color center and an L3 type photonic crystal microcavity, wherein the silicon carbide color center is disposed in the L3 type photonic crystal microcavity, and the photonic crystal plate has a first path and a first Second path Receiving pump light through the first path; Converting the pump light into photoluminescence PL; The PL light is emitted through the second path, the PL light comprising a plurality of single photons. The method of claim 7, wherein the receiving the pump light through the first path comprises: Receiving the pump light through the first path using a first photonic crystal waveguide; The transmitting the PL light by using the second path includes: Receiving the pump light through the first path using a second photonic crystal waveguide, wherein the first photonic crystal The waveguide has a different frequency than the second photonic crystal waveguide. The method according to claim 7, wherein the silicon carbide color center is a double vacancy defect pair Ky5 type color center, a carbon substitution-vacancy defect pair CsiVc type color center or a silicon vacancy defect Vsi color center. The method of claim 7 wherein said photonic crystal plate comprises a plurality of air holes, said air holes comprising at least one of a rectangular air hole and a circular air hole. The method according to claim 10, wherein said air hole is said circular air hole; The circular air hole corresponds to a lattice constant of a, and the lattice constant is a distance between a center of the first circular air hole and a center of the second circular air hole, the first circular air hole and the The second circular air hole has an adjacent relationship; The radius of the circular air hole is 0.29a; The third circular air hole offset of one end of the L3 type photonic crystal microcavity is 0.21a, and the fourth circular air hole offset of the other end of the L3 type photonic crystal microcavity is 0.21a, and the The radius of the third circular air hole and the fourth circular air hole is 0.12a. The method according to any one of claims 7 to 11, wherein the silicon carbide color center has a refractive index of 2.5, and the silicon carbide color center has a thickness ranging from greater than or equal to 150 nanometers and less than or Equal to 350 nanometers. A communication system, comprising: A single photon source device according to any of claims 1-6.

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