WO2019093761A1 - Composition for hard mask - Google Patents

Abstract

A composition for a hard mask of the present invention comprises a polymer of a linker compound having a particular structure and an aromatic compound containing a hydroxyl group, an ether group, or a thio-ether group. A hard mask having improved etching resistance, solubility, and flatness can be formed from the composition for a hard mask.

Description

Composition for hard mask

The present invention relates to a composition for a hard mask. More particularly, the present invention relates to a composition for a hard mask comprising a polycondensate of at least one aromatic compound.

For example, in the fields of semiconductor manufacturing, microelectronics, etc., the degree of integration of structures such as circuits, wiring lines, insulation patterns and the like is continuously improving. Accordingly, a photolithography process for fine patterning of the structures has been developed at the same time.

Generally, a photoresist is applied on a film to be etched to form a photoresist layer, and a photoresist pattern is formed through exposure and development. Then, a predetermined pattern can be formed by partially removing the film to be etched by using the photoresist pattern as an etching mask. After the image transfer to the etch target film is performed, the photoresist pattern may be removed through an ashing and / or strip process.

An anti-reflection coating (ARC) layer may be formed between the etch target film and the photoresist layer to suppress the resolution degradation due to light reflection during the exposure process. In this case, the etching for the ARC layer is added, so that the consumption amount or the etching amount of the photoresist layer or the photoresist pattern can be increased. Further, when the thickness of the etching target film increases or the etching amount required for forming a desired pattern increases, sufficient etching resistance of the photoresist layer or the photoresist pattern may not be ensured.

Thus, a resist undercoat may be added between the etch target film and the photoresist layer to ensure etch resistance and etch selectivity of the photoresist for desired pattern formation.

The resist undercoat film has sufficient etchability (or etching resistance), heat resistance, for example, for a high-temperature etching process, and also satisfies properties required to be formed into a uniform thickness by, for example, a spin- desirable.

Korean Patent Laid-Open No. 10-2010-0082844 discloses an example of a composition for forming a resist lower film.

An object of the present invention is to provide a composition for a hard mask capable of forming a hard mask having excellent mechanical and chemical properties.

1. A polymer comprising at least one of repeating units represented by the following formulas (1-1) or (1-2); And a solvent.

[Formula 1-1]

[Formula 1-2]

(In the formulas (1-1) and (1-2), Ar represents an arylene group containing at least one of a hydroxyl group, an ether group and a thioether group,

X represents oxygen (O), sulfur (S) or NR ₁ , R ₁ represents an alkyl group having 1 to 4 carbon atoms, an alkenyl or alkynyl group having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms And n is an integer of 1 to 200).

2. The hard mask composition according to 1 above, wherein said polymer comprises a linker unit derived from at least one of the linker compounds represented by the following general formulas (2-1) or (2-2):

[Formula 2-1]

[Formula 2-2]

3. The hard mask composition according to 2 above, wherein the linker compound comprises a compound represented by the following formula (2-2-1):

[Chemical Formula 2-2-1]

4. The hard mask composition according to 1 above, wherein Ar in the above formulas 1-1 and 1-2 is derived from an aromatic compound containing a hydroxyl group, an ether group or a thioether group.

5. The composition for a hard mask according to 4 above, wherein the aromatic compound containing a hydroxyl group comprises at least one of compounds represented by the following general formula (3) or (4)

(3)

(In the formula, Ar ₁ And Ar ₂ are independently a phenylene group or a biphenylene group, n ₁ and n ₂ are each independently an integer of 0 to 2, and at least one of n ₁ and n ₂ is 1 or 2)

[Chemical Formula 4]

(Wherein n ₃ and n ₄ are each independently an integer of 0 or 1, and at least one of n ₃ and n ₄ is 1).

6. The aromatic compound having a hydroxyl group as described in the above 5, wherein the aromatic compound is a compound selected from the group consisting of the compounds represented by the following formulas (3-1), (3-2), (4-1) At least one selected from the group consisting of:

[Formula 3-1]

[Formula 3-2]

[Formula 4-1]

[Formula 4-2]

[Formula 4-3]

.

.

7. The hard mask composition according to item 4, wherein the aromatic compound containing an ether group or a thioether group comprises a compound represented by the following formula (5):

[Chemical Formula 5]

(Wherein X is oxygen (O) or sulfur (S), n ₅ and n ₆ are each an integer of 0 to 2, and n is an integer of 0 to 3).

8. The hard mask composition according to 7 above, wherein the aromatic compound containing an ether group or a thioether group comprises at least one selected from the group consisting of compounds represented by the following formulas (5-1) to (5-4)

[Formula 5-1]

[Formula 5-2]

[Formula 5-3]

[Formula 5-4]

9. The composition of claim 1, wherein the composition comprises 5 to 30% by weight of the polymer in the total weight of the composition, and 70 to 95% by weight of the solvent.

10. The composition for hard mask according to 1 above, further comprising at least one of a crosslinking agent, a catalyst or a surfactant.

By using the composition for a hard mask according to embodiments of the present invention, it is possible to form a hard mask having excellent etching resistance and improved film-forming properties such as solubility, coating property and the like.

The composition for a hard mask according to embodiments of the present invention may comprise a condensation polymer using aromatic compounds containing a hydroxyl group, an ether group or a thioether group and a linker compound having a high carbon content. The etching resistance from the linker compound is improved in addition to the etching resistance basically ensured from the aromatic compound, whereby the mechanical properties of the hard mask can be remarkably improved.

Further, by using a compound selected in consideration of the solubility in a solvent as the aromatic compound, the film forming characteristics can be improved at the same time.

A high resolution photolithography process can be implemented using the hard mask formed from the composition for hard mask, and a target pattern having a desired fine line width can be formed.

Embodiments of the present invention provide a composition for a hard mask that includes a polymer comprising a linker unit having a specific structure and a high carbon content, thereby significantly improving etch resistance.

A hard mask film may be formed using the composition for a hard mask, for example, applied between a photoresist layer and a film to be etched to be utilized as a resist under film. The hard mask film may be partially removed through a photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.

The hard mask film or the hard mask may be utilized, for example, as a spin-on hard mask (SOH).

Hereinafter, the composition for a hard mask according to embodiments of the present invention will be described in detail. When a compound or an isomer of a resin represented by the formula used in the present application is present, the compound or the resin represented by the formula means a representative formula including the isomer thereof.

As used herein, the term " aromatic " or " aromatic compound " is used to encompass not only compounds in which the entire compound satisfies the directionality, but also those in which some structure or group of the compound satisfies the directivity.

As used herein, the term " arylene group " may mean a divalent group derived from the above-mentioned aromatic compound.

As used herein, the term " carbon content " may refer to the ratio of carbon mass to total mass per molecule of a compound.

The composition for a hard mask according to embodiments of the present invention includes a polymer (or a condensate) and a solvent, and may further include an additional agent such as a cross-linking agent, a catalyst, and the like.

polymer

According to the embodiments of the present invention, the composition for hard mask includes a polymer comprising at least one of the repeating units represented by the following formulas (1-1) or (1-2).

[Formula 1-1]

[Formula 1-2]

In Formulas 1-1 and 2-1, Ar may represent an arylene group containing at least one of a hydroxyl group, an ether group and a thioether group. In Formula 2, X may represent oxygen (O), sulfur (S) or NR ₁ . R ₁ may be an alkyl group having 1 to 4 carbon atoms, an alkenyl or alkynyl group having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms. For example, n may be an integer from 1 to 200.

In some embodiments, the polymer comprising repeating units of the following formula 1-1 or 1-2 may be obtained by linker units derived from a high carbon content linker compound represented by the following formula 2-1 or 2-2 .

[Formula 2-1]

[Formula 2-2]

X in the formula (2-2) is as defined in the formula (1-2).

In the case of the linker compound of formula (2-1), four rings are fused to produce aromatic rings of multiple rings, so that the etchability of the hard mask can be improved through a high carbon content structure.

In the case of the linker compound of the above formula (2-2), a unit derived from carbazole or an analogue thereof is included, and the improvement of the etching resistance through the high carbon content can be realized.

In one embodiment, X in formula (2-2) may include NR < ₁ >. In this case, R < ₁ > may be selected from ethyl, vinyl or phenyl groups, and mechanical properties such as resistance to etching can be further improved without unduly inhibiting the solubility of the polymer.

In a preferred embodiment, R < ₁ > may be a phenyl group. In this case, the high carbon content linker compound may be represented by the following formula (2-2-1).

[Chemical Formula 2-2-1]

In the above formula (1), " Ar " may be provided as a main chain or backbone unit of the polymer. According to exemplary embodiments, Ar may be derived from an aromatic compound comprising a hydroxyl group, an ether group or a thioether group.

Examples of the aromatic compound having a hydroxyl group include the compounds represented by the following formulas (3) and / or (4).

(3)

In the formula (3), Ar ₁ And Ar ₂ may be, independently of each other, a phenylene group or a biphenylene group. n ₁ and n ₂ are each independently an integer of 0 to 2, and at least one of n ₁ and n ₂ is 1 or 2.

[Chemical Formula 4]

In the general formula (4), n ₃ and n ₄ are each independently an integer of 0 or 1, and at least one of n ₃ and n ₄ is 1.

In the case of the compounds of Chemical Formula 3 or Chemical Formula 4, the solubility in a solvent, the adhesion to a substrate and the reactivity with the above-mentioned linker compound can be improved by including a hydroxyl group. In addition, the flexibility of the hard mask or the polymer can be improved by including the rotatable arrhilling, and the film forming properties such as solubility and coating property can be further improved.

For example, as the aromatic compounds containing a hydroxyl group, the following compounds of the following formulas (3-1), (3-2), (4-1), (4-2) or (4-3) may be mentioned. These may be used alone or in combination of two or more.

[Formula 3-1]

[Formula 3-2]

[Formula 4-1]

[Formula 4-2]

[Formula 4-3]

.

.

For example, when two hydroxyl groups are arranged staggered with each other through each phenyl ring as shown by the formula 4-3, the effect of increasing the solubility through the hydroxyl group can be further improved.

The aromatic compound containing an ether group or a thioether group may include a compound represented by the following formula (5).

[Chemical Formula 5]

In the general formula (5), X is oxygen (O) or sulfur (S), and n ₅ and n ₆ are each an integer of 0 to 2. n is an integer of 0 to 3;

The aromatic compound containing an ether group or a thioether group may have improved solubility in a solvent due to an increase in polarity through an ether group or an electron surrounding the thioether group. Further, film-forming properties such as solubility and flatness of the polymer or hard mask can be further improved through the rotatable structure of the ether group or the thioether group.

For example, the aromatic compound containing an ether group or a thioether group may include at least one of the following compounds represented by the following formulas (5-1) to (5-4).

[Formula 5-1]

[Formula 5-2]

[Formula 5-3]

[Formula 5-4]

In some embodiments, the polymer may be prepared using only the above-described aromatic compound having a hydroxyl group, ether group or thioether group and the linker compound of the above formula (2-1) or (2-2), and the other aromatic compound Or a linker compound may not be used in the production of the polymer. Therefore, it is possible to prevent the flatness, the etch resistance, and the solubility degradation due to the addition of other compounds and ensure desired properties.

However, in one embodiment, within the range not interfering with the effect of the above-mentioned combination of the hydroxyl group, ether group or thioether group-containing aromatic compound and the linker compound of Formula 2-1 or 2-2, Or a bond at the main chain may be included, and the embodiments of the present invention do not necessarily exclude this.

In the preparation of the polymer, the above-mentioned aromatic group compound having a hydroxyl group, ether group or thioether group and the linker compound of the general formula (2-1) or (2-2) may be used in a molar ratio range of, for example, about 1: 0.5 to 1: But is not necessarily limited thereto.

As indicated by the formula (I), the units derived from the linker compound and the units indicated by " Ar " can be alternately repeated alternately with each other, so that the length of the polymer can be extended. However, the formula (1) indicates that the above-mentioned units are included together, and does not necessarily define the bonding sequence and position.

In one embodiment, the polydispersity index (PDI) (weight average molecular weight (Mw) / number average molecular weight (Mn)) of the polymer can be from about 1.5 to 6.0, preferably from about 1.5 to 3.0 . Within this range, film formation properties such as favorable solubility, etch resistance, coating property and flatness can be improved together.

The content of the polymer is not particularly limited, but may be, for example, about 5 to 30% by weight of the total weight of the composition for a hard mask, and in one embodiment about 10 to 30% by weight.

menstruum

The solvent used in the composition for a hard mask according to the embodiments of the present invention is not particularly limited and may include an organic solvent having sufficient solubility in the above-mentioned polycondensate. For example, the solvent may be selected from the group consisting of propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone gamma -butyrolactone (GBL), acetyl acetone, and the like.

The content of the solvent is not particularly limited and may be included in the balance excluding the polycondensate and the additional agents described below. For example, the solvent may comprise from about 70% to about 95% by weight of the total weight of the composition for a hard mask.

Additional formulations

Optionally, the composition for a hard mask according to embodiments of the present invention may further comprise additional agents such as crosslinking agents, catalysts, and surfactants.

The crosslinking agent is capable of crosslinking the repeating units contained in the polymer with each other, and can react with, for example, a hydroxyl group contained in the polymer. By the crosslinking agent, the curing property of the composition for a hard mask can be further strengthened.

Examples of the cross-linking agent include melamine, an amino resin, a glycoluril compound, and a bis-epoxy compound.

The cross-linking agent may be, for example, an etherified amino resin such as methylated or butylated melamine (specifically N-methoxymethyl-melamine or N-butoxymethyl-melamine) and methylated or butylated (Hydroxymethyl) -p (methoxymethyl) urea resin represented by the following general formula (7), urea resin (specific examples of which are Cymel U-65 Resin or UFR 80 Resin), glycoluril derivatives - cresol compounds and the like. The bis-epoxy compound represented by the following general formula (8) and the melamine-based compound represented by the following general formula (9) can also be used as a crosslinking agent.

[Chemical Formula 6]

(7)

[Chemical Formula 8]

[Chemical Formula 9]

As the catalyst, an acid catalyst or a basic catalyst may be used.

The acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, an organic acid such as p-toluenesulfonic acid can be used. As the acid catalyst, a thermal acid generator (TAG) system compound may be used. Examples of the thermal acid generator system catalyst include pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadiene, benzoin tosylate, 2-nitrobenzyltosyl Alkyl esters of organic sulfonic acids, and the like.

As the basic catalyst, any one selected from among NH ₄ OH or ammonium hydroxide represented by NR ₄ OH (R is an alkyl group) can be used.

When the cross-linking agent is included, the content of the cross-linking agent may be about 1 to 30 parts by weight, preferably about 5 to 20 parts by weight, more preferably about 5 to 10 parts by weight based on 100 parts by weight of the polycondensate.

When the catalyst is included, the content of the catalyst may be about 0.001 to 5 parts by weight, preferably about 0.1 to 2 parts by weight, more preferably about 0.1 to 1 part by weight, per 100 parts by weight of the polycondensate .

Appropriate crosslinking properties can be obtained within the range of the content of the crosslinking agent and the catalyst without deteriorating the etching resistance, heat resistance, solubility and flatness of the polycondensate.

The composition for a hard mask according to the embodiments of the present invention may further include a surfactant for improving the surface property and adhesiveness of the hard mask. As the surfactant, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt and the like can be used, but not limited thereto. The content of the surfactant may be, for example, about 0.1 to 10 parts by weight based on 100 parts by weight of the polycondensate.

In addition, embodiments of the present invention provide a method of forming a pattern using the hard mask composition.

According to exemplary embodiments, a hard mask can be formed by forming a film to be etched on a substrate, and coating and hardening the above-mentioned hard mask composition on the film to be etched. A photoresist film is formed on the hard mask, and the photoresist film is selectively exposed and developed to form a photoresist pattern. A hard mask pattern may be formed by selectively etching the hard mask using the photoresist pattern.

Then, a predetermined target pattern can be formed by selectively removing the etching target film using the photoresist pattern and the hard mask pattern together as an etching mask.

For example, the substrate may comprise a silicon wafer or a semiconductor substrate fabricated from a germanium wafer. The etch target film may include an insulating material such as silicon oxide, silicon nitride, etc., a conductive material such as metal or metal nitride, or a semiconductor material such as polysilicon.

The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. It will be apparent to those skilled in the art that various changes and modifications can be made to the embodiments within the spirit and scope of the appended claims.

Example  And Comparative Example

A composition for a hard mask of the composition and the content (% by weight) shown in Table 1 below was prepared. In Examples and Comparative Examples, paratoluene sulfonic acid (5 mol% based on the hydroxyl group-containing aromatic compound) was used as an acid catalyst in the formation of the polymer (A).

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3500)A-1:

,

(Weight-average molecular weight: 3500) produced by the condensation reaction of ethylene (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 1750)A-2:

,

(Weight-average molecular weight: 1750) produced by the condensation reaction at a molar ratio (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3300)A-3:

,

(Weight-average molecular weight: 3300) produced by the condensation reaction at a molar ratio (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2250)A-4:

,

(Weight average molecular weight: 2250) produced by a condensation reaction at a molar ratio (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4900)A-5:

,

(Weight-average molecular weight: 4900) produced by the condensation reaction of ethylene (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 5050)A-6:

,

(Weight-average molecular weight: 5050) produced by the condensation reaction of ethylene (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 3100)A'-1:

,

(Weight average molecular weight: 3100) produced by a condensation reaction at a molar ratio (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 2150)A'-2:

,

(Weight-average molecular weight: 2150) produced by the condensation reaction of ethylene (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 1900)A'-3:

,

(Weight average molecular weight: 1900) produced by a condensation reaction at a molar ratio (1: 1 molar ratio)

,

(1:1 몰비율)의 축합반응으로 생성된 공중합체(중량평균분자량: 4800)A'-4:

,

(Weight-average molecular weight: 4800) produced by a condensation reaction of ethylene (1: 1 molar ratio)

B: PGMEA

C: N-methoxymethyl-melamine resin

D: p-toluenesulfonic acid-pyridine salt

E: triethylene glycol

Experimental Example

The etchability, solubility and flatness of the hard mask layer or the hard mask formed from the compositions of Table 1 were evaluated through the evaluation method described later. The evaluation results are shown in Table 2 below.

(One) Etchability  evaluation

The compositions according to Examples and Comparative Examples were respectively coated on a silicon wafer by spin coating and baked at 200 ° C for 60 seconds to form a 1500 Å thick hard mask layer. Each of the formed hard mask layers was coated with an ArF photoresist and baked at 110 ° C for 60 seconds. Exposure was then performed using ASML (XT: 1450G, NA 0.93) exposure equipment, and then TMAH (2.38 wt% aqueous solution) And developed to obtain a line-and-space pattern of 60 nm.

The cross-section of the photoresist pattern as a further cured at 110 ℃ 60 seconds, and the photoresist pattern and the CHF ₃ / CF _4, using a gas mixture proceeds for 20 seconds to dry etching for each of the said hard mask layer, and FE-SEM And the etching rate was measured to determine the etching resistance against the halogen plasma.

< Etchability  Judgment>

◎: Etching rate less than 10 A / sec

○: Etching rate 10 A / sec or more and less than 11 A / sec

DELTA: etching rate of 11 A / sec or more and less than 12 A / sec

×: etching rate of 12 A / sec or more

(2) Solubility

The compositions of the examples and comparative examples were stirred at 50 ° C for 1 hour and then 1) the dissolved state of the polymer at a heating temperature (50 ° C) was confirmed, and after cooling to room temperature, 2) , And further stirred at room temperature for 6 hours. (3) The dissolved state of the polymer was confirmed at the room temperature (25 DEG C), and the solubility was measured.

&Lt; Determination of solubility &

◎: Unhealthy polymer is not visually confirmed at room temperature.

○: Under normal temperature condition, unharmed polymer is not visually confirmed, but a small amount of unheated polymer is visually confirmed at room temperature.

△: The unhydrolyzable polymer was not visually confirmed in the warmed state, but the unheated polymer was visually confirmed in the normal temperature state.

X: A small amount of unheated polymer was visually confirmed in a heated state.

(3) Flatness  evaluation

The compositions of Examples and Comparative Examples were coated on a SiO ₂ wafer substrate having a trench width of 10 μm and a depth of 0.50 μm and dried to form a hard mask film. The thickness difference between the trench portion and the non-trench portion was measured by a scanning electron microscope (SEM) to evaluate flatness.

< Flatness  Judgment>

?: Thickness difference less than 150 nm

?: Thickness difference of 150 to 175 nm

DELTA: thickness difference of 175 to 200 nm

X: Thickness difference exceeding 200 nm

Referring to Table 2, in the case of the hard mask using the linker compound and the aromatic compound according to the embodiments of the present invention, etchability, solubility, and flatness were improved in a balanced manner as a whole.

On the other hand, in Comparative Example 1 in which benzaldehyde was used, the etching resistance was excessively lowered, and in Comparative Example 2 in which naphthyl aldehyde and aryl substituted carbazole compounds were used, the solubility and flatness were excessively lowered.

In the case of Comparative Example 3 in which pyrene and pylene aldehyde were used, the etch resistance was increased, but the solubility and flatness were rapidly deteriorated.

In the case of Comparative Example 4 in which biphenylol and biphenylaldehyde were used together, the solubility and flatness were improved, but the etch resistance was excessively reduced.

Claims (10)

A polymer comprising at least one repeating unit represented by the following formula (1-1) or (1-2); And A composition for a hard mask, comprising: [Formula 1-1]

[Formula 1-2]

(In the formulas (1-1) and (1-2), Ar represents an arylene group containing at least one of a hydroxyl group, an ether group and a thioether group, X represents oxygen (O), sulfur (S) or NR &lt; ₁ &gt; R ₁ represents an alkyl group having 1 to 4 carbon atoms, an alkenyl or alkynyl group having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and n is an integer of 1 to 200). The composition for a hard mask according to claim 1, wherein the polymer comprises a linker unit derived from at least one of the linker compounds represented by the following formulas (2-1) or (2-2): [Formula 2-1]

[Formula 2-2]

(2-2), X represents oxygen (O), sulfur (S) or NR &lt; ₁ &gt; R ₁ is an alkyl group having 1 to 4 carbon atoms, an alkenyl or alkynyl group having 2 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms. The hard mask according to claim 2, wherein the linker compound comprises a compound represented by the following formula (2-2-1): [Chemical Formula 2-2-1]

. The hard mask composition according to claim 1, wherein Ar in the formulas 1-1 and 1-2 is derived from an aromatic compound containing a hydroxyl group, an ether group or a thioether group. 5. The composition for a hard mask according to claim 4, wherein the aromatic compound containing a hydroxyl group comprises at least one of compounds represented by the following general formula (3) or (4) (3)

(In the formula, Ar ₁ And Ar ₂ are independently a phenylene group or a biphenylene group, n ₁ and n ₂ are each independently an integer of 0 to 2, and at least one of n ₁ and n ₂ is 1 or 2) [Chemical Formula 4]

(Wherein n ₃ and n ₄ are each independently an integer of 0 or 1, and at least one of n ₃ and n ₄ is 1). The aromatic compound containing a hydroxyl group according to claim 5, wherein the aromatic compound is at least a compound selected from the group consisting of compounds represented by the following formulas (3-1), (3-2), (4-1) A composition for a hard mask, comprising: [Formula 3-1]

[Formula 3-2]

[Formula 4-1]

[Formula 4-2]

[Formula 4-3]

. 5. The composition for a hard mask according to claim 4, wherein the aromatic compound containing an ether group or a thioether group comprises a compound represented by the following formula [Chemical Formula 5]

(Wherein X is oxygen (O) or sulfur (S), n ₅ and n ₆ are each an integer of 0 to 2, and n is an integer of 0 to 3). 8. The composition for a hard mask according to claim 7, wherein the aromatic compound containing an ether group or a thioether group comprises at least one selected from the group consisting of compounds represented by the following formulas (5-1) to (5-4) [Formula 5-1]

[Formula 5-2]

[Formula 5-3]

[Formula 5-4]

. The composition of claim 1, comprising 5 to 30 percent by weight of the polymer in the total weight of the composition, and 70 to 95 percent by weight of the solvent. The composition of claim 1, further comprising at least one of a crosslinking agent, a catalyst, or a surfactant.