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WO2019093231A1 - Method for producing float glass, and apparatus for producing float glass - Google Patents

Method for producing float glass, and apparatus for producing float glass Download PDF

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Publication number
WO2019093231A1
WO2019093231A1 PCT/JP2018/040776 JP2018040776W WO2019093231A1 WO 2019093231 A1 WO2019093231 A1 WO 2019093231A1 JP 2018040776 W JP2018040776 W JP 2018040776W WO 2019093231 A1 WO2019093231 A1 WO 2019093231A1
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Prior art keywords
plasma
molten metal
plasma gas
glass
exposed portion
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PCT/JP2018/040776
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French (fr)
Japanese (ja)
Inventor
圭介 中尾
秀文 小高
泰夫 林
誠二 東
勝 堀
健治 石川
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AGC Inc
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Asahi Glass Co Ltd
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Priority to KR1020207012578A priority Critical patent/KR102518796B1/en
Priority to CN201880071650.1A priority patent/CN111315693B/en
Priority to JP2019552757A priority patent/JP7173040B2/en
Publication of WO2019093231A1 publication Critical patent/WO2019093231A1/en
Anticipated expiration legal-status Critical
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00Shaping glass in contact with the surface of a liquid
    • C03B18/02Forming sheets
    • C03B18/18Controlling or regulating the temperature of the float bath; Composition or purification of the float bath
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Definitions

  • the float bath is sealed as much as possible, and high purity nitrogen gas is blown in as a protective atmosphere gas to prevent the entry of air and is still intruded. At the same time, hydrogen gas is blown in to remove a trace amount of oxygen in the air.
  • the pressure of the protective atmosphere gas in the float bath is set slightly higher than the atmospheric pressure outside the float bath in order to prevent the entry of oxygen in the air.
  • Patent Document 1 proposes that a part of molten tin in the tin bath be extracted from the tin bath, reacted and removed from tin oxide in the extracted molten tin, and then returned to the tin bath.
  • this invention shape
  • a method of manufacturing float glass comprising: injecting a plasma gas to a molten metal exposed portion exposed to an atmosphere in the float bath.
  • the plasma gas is sprayed to the molten metal exposed portion at a width direction distance of 0.3 W or more. Is preferred.
  • good quality float glass can be manufactured under simple manufacturing conditions.
  • the plasma generating devices 40a be arranged in 1 to 15 rows along the flow direction of the glass ribbon and in 1 to 6 rows along the width direction of the glass ribbon.
  • a gap may be provided between the adjacent plasma generation devices 40a along the flow direction or the width direction of the glass ribbon.
  • the gap is preferably as small as possible in order to spray the plasma gas uniformly along the flow direction or width direction of the glass ribbon.
  • the plasma gas injection unit 31 may replace the whole or a part of the plasma generator 40a with a plasma generator 40b described later.
  • FIG. 4 (a) is a cross-sectional view showing an example of the configuration of the plasma generator 40a
  • FIG. 4 (b) is a partial cross-sectional view taken along line II-II of FIG. 4 (a).
  • a gas introduction unit 42 for introducing a gas to be plasmatized is provided on the top of a housing 41 made of a sintered body such as alumina.
  • a plasma conversion region P for converting the introduced gas into plasma.
  • two electrodes 44 are inserted at intervals from the side surface of the housing 41, and a predetermined voltage is applied between the electrodes 44 while continuously introducing a gas from the gas introduction unit 42.
  • the plasma discharge type is preferably a hollow cathode discharge.
  • the plasma generation device may be a dielectric barrier discharge (DBD) or arc discharge as a plasma discharge type.
  • the high frequency induction discharge which does not use an electrode, and a microwave discharge may be sufficient.
  • discharge by a high frequency power source may be used.
  • a plasma gas is injected from the plasma gas injection unit 31 of the plasma injection device 30 to the molten metal exposed unit 22.
  • the tin oxide present near the surface of the molten tin 20 is reduced according to the mechanism described below.
  • the oxygen in the atmosphere in the float bath 100 or the oxygen in the molten glass dissolves in the molten tin 20 of the molten metal tank 10, and tin oxide SnO x (0 ⁇ x ⁇ 2) will occur.
  • the widthwise distance W1 is preferably W or less.
  • a part of the plasma injection device 30 is located outside the molten metal tank 10 in order to connect with external equipment such as a power supply.
  • the widthwise distance W is 100 mm or more, even if the glass ribbon G fluctuates in the widthwise direction, it is possible to prevent the occurrence of a trouble in which the glass ribbon G contacts and adheres to the side wall of the molten metal tank 10. Moreover, if the width direction distance W is 600 mm or less, the glass ribbon G having a wide width can be efficiently formed without increasing the size in the width direction of the molten metal tank 10.
  • the range in which the plasma generating apparatus 40a injects the plasma gas is determined by the size of the gas discharge part 43, and the size of the gas discharge part 43 substantially matches the distance between the electrodes 44.
  • the distance between the electrodes is preferably 1 to 600 mm.
  • the longitudinal distance of the housing 41 is preferably 5 to 600 mm. Further, it is preferable that the distance in the paper surface depth direction of the housing 41 in FIGS. 4A and 5A is 5 to 400 mm.
  • plasma gas He, Ne, Ar, from N 2, CO, CO 2, H 2, H 2 O, NH 3, CH 4, C 2 H 2, C 2 H 4 and C 2 H 6
  • the plasma gas may contain only an inert gas such as He, Ne, Ar, N 2 .
  • Ar and N 2 are preferable in terms of cost. Only one of Ar and N 2 may be used, or two or more of them may be used in combination.
  • H 2 is preferable because the cost is low and the amount of reactive species is large.
  • the plasma gas contains H 2 .
  • H 2 may be contained, and an inert gas may be contained together with H 2 .
  • an inert gas is contained together with H 2 , for example, a gas containing H 2 and Ar, a gas containing H 2 and N 2 , a gas containing H 2 , Ar and N 2 can be used.
  • the plasma injection device 30 is disposed in the narrow region Z3 of the molten metal exposed portion 22 on the downstream side of the flow direction of the glass ribbon G.
  • the plasma injection device may be disposed in the wide area Z1 or the intermediate area Z2 of
  • molten tin reduced from tin oxide may be oxidized again. Therefore, it is preferable to dispose the plasma injection device 30 in the narrow region Z3 on the downstream side of the flow direction of the glass ribbon G.
  • the temperature of the molten metal is preferably 900 ° C. or less. Although it also depends on the composition of the glass produced by the float method, it is because the molten metal temperature in the narrow zone Z3 is usually 900 ° C. or less. From the composition of the glass to be produced, it is preferable to appropriately select the temperature of the molten metal to which the plasma gas is injected in the temperature range of 900 ° C. or less.
  • the lower limit of the temperature of the molten metal to which the plasma gas is injected is not particularly limited, but the temperature of the molten metal is usually 500 ° C. or higher in order to inject the plasma gas to the molten metal exposed portion 22 in the molten metal tank 10. is there.
  • the thickness of the glass sheet produced according to the embodiment of the present invention is not particularly limited, but preferably 0.1 to 2.0 mm.
  • the reduction rate of the SnO 2 film when the plasma gas was jetted to the SnO 2 film formed by sputtering on the glass plate was evaluated according to the following procedure.
  • a 20 mm square quartz glass plate was used as the glass plate.
  • a 500 nm thick SnO 2 film was formed by sputtering over the entire surface on one main surface of the glass plate. Thereafter, the center ⁇ 5 mm of the SnO 2 film was masked, the other SnO 2 films were removed by the etching solution, and a sample in which the SnO 2 film remained only in the masking portion was produced.
  • the distance between the plasma gas injection site (the lower surface of the second discharge part 45) and the injection site (SnO 2 film) is set to 5 mm, 10 mm and 15 mm as a glass plate temperature of 500 ° C. and processing time (plasma gas injection time) 60 sec.
  • FIG. 9 Carried out in FIG. 9 is a diagram showing the distance dependency between the plasma gas injection site and the injection site of the SnO 2 reduction rate based on this result. From FIG. 9, the SnO 2 reduction rate has a negative correlation with the distance between the plasma gas injection site and the injection site, and the SnO 2 reduction speed decreases as the distance between the plasma gas injection site and the injection site increases. I know what to do. This is considered to be because the amount of deactivation of the hydrogen radical which is a reactive species increases as the distance increases.
  • FIG. 10 shows the linear velocity dependency of the plasma gas of the SnO 2 reduction rate. It can be seen from FIG. 10 that the SnO 2 reduction rate has a positive correlation with the linear velocity of the plasma gas, and the larger the linear velocity of the plasma gas, the better the SnO 2 reduction rate. This is considered to be because, as the linear velocity of the plasma gas increases, the amount of hydrogen radicals that are reactive species is transported to the object without being deactivated.
  • FIG. 11 is a diagram showing the difference in the SnO 2 reduction rate depending on the presence or absence of the second discharge part of the plasma generator.
  • the linear velocity is 4.04 m / s
  • the distance between the plasma gas injection site and the injection site (SnO 2 film) is 5 mm
  • the processing time plasma gas injection time
  • the glass plate temperature is 500 ° C, 625 ° C, 750 ° C Carried out in three ways.
  • the cross-sectional shape of the gas discharge part 43 of the plasma generator 40a shown in FIG. 4 was a linear rectangle having a distance (long side) of 20 mm and a short side of 0.3 mm in the longitudinal direction of the electrode 44.
  • 21 circles are arranged along the longitudinal direction of the electrode 44 with a diameter of 0.5 mm and a pitch of 0.5 mm. did. From FIG. 11, it can be seen that the reduction rate is faster in the plasma generator 40a than in the plasma generator 40b. This is considered to be because the area of the wall in contact with the plasma gas is larger in the plasma generating apparatus 40b than in the plasma generating apparatus 40a, and thus the amount of reactive species captured and inactivated is increased.
  • the distance from the molten tin surface to the gas discharge part 43 of the plasma generator 40a was 5 mm, and the measurement part of the zirconia type oxygen sensor was installed at a depth of 20 mm from the molten tin surface.
  • the arrows in FIG. 12 indicate the time zone in which the mixed gas of Ar and H 2 is plasmatized, and in this time zone, the absolute value of the slope is larger than the time zone in which the plasmatization is not conducted. This indicates that the decay time of the oxygen potential is faster in the plasmad time zone. Further, in the vicinity of 300 minutes in FIG.
  • Plasma injection device 31 Plasma gas injection part 32: Support part 40a, 40b: Plasma generator 41: Housing 42: Gas introduction part 43 : Gas discharge unit (first discharge unit) 44: Electrode 45: Second discharge part G: Glass ribbon P: Plasmaized area

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a method for producing a float glass, wherein: a molten glass that is obtained by melting a glass starting material is shaped into a glass ribbon on a molten tin within a float bath; and the thus-obtained glass ribbon is subjected to slow cooling, thereby obtaining a glass plate. This method for producing a float glass is characterized in that a plasma gas is sprayed to a molten metal exposure part that is exposed to the atmosphere within the float bath.

Description

フロートガラスの製造方法、およびフロートガラスの製造装置Method of manufacturing float glass, and apparatus for manufacturing float glass

 本発明は、錫欠点を低減させる、フロートガラスの製造方法、およびフロートガラスの製造装置に関する。 The present invention relates to a method for producing float glass and a device for producing float glass, which reduce tin defects.

 フロートガラスの製造においては、フロートバス内の溶融錫への酸素の溶解を削減することが重要である。その理由の一つは、溶融錫中に酸素が溶解することにより生じた酸化錫が、フロートガラスの下面に付着して錫欠点を生じさせるからである。 In the production of float glass, it is important to reduce the dissolution of oxygen into the molten tin in the float bath. One of the reasons is that tin oxide produced by the dissolution of oxygen in molten tin adheres to the lower surface of the float glass to cause a tin defect.

 従来、フロートバス内の溶融錫と酸素の接触を防止するために、フロートバスはできるだけ密閉構造とされ、空気の侵入を防ぐために保護用雰囲気ガスとして高純度の窒素ガスが吹き込まれ、それでもなお侵入する微量の空気中の酸素を除去するために水素ガスが同時に吹き込まれている。なお、空気中の酸素の侵入を防止するために、フロートバス内の保護用雰囲気ガスの圧力はフロートバス外部の大気圧よりも若干高目に設定されている。 In the past, in order to prevent contact between molten tin and oxygen in the float bath, the float bath is sealed as much as possible, and high purity nitrogen gas is blown in as a protective atmosphere gas to prevent the entry of air and is still intruded. At the same time, hydrogen gas is blown in to remove a trace amount of oxygen in the air. The pressure of the protective atmosphere gas in the float bath is set slightly higher than the atmospheric pressure outside the float bath in order to prevent the entry of oxygen in the air.

 近年、製造歩留り向上のために、より一層の錫欠点低減が求められている。この要求に応えるためには、溶融錫中の酸化錫そのものを除去する直接的な方法をとる必要がある。 In recent years, a further reduction in tin defects has been required to improve manufacturing yield. In order to meet this demand, it is necessary to adopt a direct method of removing tin oxide itself in molten tin.

 そのため、特許文献1では、錫浴内の溶融錫の一部を錫浴から抜き出し、抜き出した溶融錫中の酸化錫を反応させて除去した後、錫浴に戻すことが提案されている。 Therefore, Patent Document 1 proposes that a part of molten tin in the tin bath be extracted from the tin bath, reacted and removed from tin oxide in the extracted molten tin, and then returned to the tin bath.

日本国特許第4281141号公報Japanese Patent No. 4281141

 しかしながら、特許文献1に記載の方法は、錫浴の外部で溶融錫を循環させる循環系を設けることが必要であり、また、溶融錫中の酸化錫を除去するために、溶融錫を錫浴内における最低温度以下の温度に冷却し、錫浴に戻す前に溶融錫を再度加熱することが必要である。したがって、特許文献1に記載の方法は、錫欠点を低減することができるものの、設備構成、製造条件が煩雑となり、設備投資費用、運転費用が嵩むという問題があった。 However, the method described in Patent Document 1 needs to provide a circulation system for circulating molten tin outside the tin bath, and in order to remove tin oxide in the molten tin, the molten tin is tin bath It is necessary to cool to a temperature below the internal minimum temperature and reheat the molten tin before returning it to the tin bath. Therefore, although the method described in Patent Document 1 can reduce tin defects, there is a problem that equipment configuration and manufacturing conditions become complicated, and equipment investment cost and operation cost increase.

 本発明は、上記課題に鑑みてなされたものであり、簡便な製造条件で品質の良いガラス板が得られるフロートガラスの製造方法、およびフロートガラスの製造装置を提供することを目的とする。 The present invention is made in view of the above-mentioned subject, and an object of the present invention is to provide a manufacturing method of float glass from which a good quality glass board is obtained by simple manufacturing conditions, and a manufacturing apparatus of float glass.

 上記課題を解決するため、本発明は、ガラス原料を溶解して得た溶融ガラスを、フロートバス内の溶融金属上でガラスリボンに成形し、得られたガラスリボンを徐冷して板ガラスを得る、フロートガラスの製造方法であって、前記フロートバス内の雰囲気に露出している溶融金属露出部に対し、プラズマガスを噴射することを特徴とするフロートガラスの製造方法を提供する。
 本発明のフロートガラスの製造方法において、前記溶融金属露出部の幅方向距離をW(mm)とするとき、前記プラズマガスを幅方向距離0.3W以上で溶融金属露出部に対して噴射することが好ましい。
 本発明のフロートガラスの製造方法において、前記プラズマガスを流れ方向距離10~400mmで溶融金属露出部に対して噴射することが好ましい。
 本発明のフロートガラスの製造方法において、前記プラズマガスを、前記溶融金属露出部から上方に鉛直方向距離を5~30mm離間させて溶融金属露出部に対して噴射することが好ましい。
 本発明のフロートガラスの製造方法において、前記プラズマガスが、He,Ne,Ar,N2,CO,CO2,H2,H2O,NH3,CH4,C22,C24およびC26からなる群から選択される少なくとも一種を含有することが好ましい。
 本発明のフロートガラスの製造方法において、前記プラズマガスが噴射され、前記溶融金属露出部に到達するまでの雰囲気における水素ラジカル密度が1×1011/cm3以上であることが好ましい。
 本発明のフロートガラスの製造方法において、プラズマガスを線速0.1~200m/sで溶融金属露出部に対して噴射することが好ましい。
 本発明のフロートガラスの製造方法において、前記プラズマガスは、前記溶融金属露出部の上方に対向して設けられたプラズマ噴射装置から噴射され、
 前記プラズマ噴射装置は、プラズマガスを噴射するプラズマガス噴射部を備え、
 前記プラズマガス噴射部は、複数のプラズマ発生装置を含み、
 前記プラズマ発生装置に導入したガスをプラズマ化するプラズマ化領域における前記プラズマガスの電子密度が1×1013/cm3以上であることが好ましい。
 本発明のフロートガラスの製造方法において、前記溶融金属露出部において、プラズマガス噴射後の前記溶融金属の酸素ポテンシャルは、プラズマガス噴射前の前記溶融金属の酸素ポテンシャルの1/2以下であることが好ましい。
 本発明のフロートガラスの製造方法において、プラズマガスが噴射される前記溶融金属の温度が900℃以下であることが好ましい。
 また、本発明は、ガラス原料を溶解して得た溶融ガラスを、フロートバス内の溶融金属上でガラスリボンに成形し、得られたガラスリボンを徐冷して板ガラスを得る、フロートガラスの製造装置であって、前記フロートバス内の雰囲気に露出している溶融金属露出部の上方には、プラズマ噴射装置が配置され、前記プラズマ噴射装置は、プラズマガス噴射部と、該プラズマガス噴射部を支持する支持部とを備え、前記プラズマガス噴射部は、前記溶融金属露出部に対し、プラズマガスを噴射することを特徴とするフロートガラスの製造装置を提供する。
 本発明のフロートガラスの製造装置において、前記プラズマガス噴射部は、複数のプラズマ発生装置を含み、
 前記プラズマ発生装置は、該プラズマ発生装置の長手方向と、前記ガラスリボンの流れ方向とが一致するように配置されることが好ましい。
 本発明のフロートガラスの製造装置の前記プラズマ発生装置は、ガス排出部の断面形状が矩形であることが好ましい。
MEANS TO SOLVE THE PROBLEM In order to solve the said subject, this invention shape | molds the molten glass obtained by melt | dissolving glass-making feedstock to a glass ribbon on the molten metal in a float bath, and it anneals the obtained glass ribbon and obtains plate glass. A method of manufacturing float glass, comprising: injecting a plasma gas to a molten metal exposed portion exposed to an atmosphere in the float bath.
In the method of manufacturing float glass according to the present invention, when the distance in the width direction of the molten metal exposed portion is W (mm), the plasma gas is sprayed to the molten metal exposed portion at a width direction distance of 0.3 W or more. Is preferred.
In the method of manufacturing float glass according to the present invention, the plasma gas is preferably jetted to the molten metal exposed portion at a flow direction distance of 10 to 400 mm.
In the method of manufacturing float glass according to the present invention, preferably, the plasma gas is sprayed to the molten metal exposed portion at a distance of 5 to 30 mm above the molten metal exposed portion.
The method of manufacturing a float glass of the present invention, the plasma gas, He, Ne, Ar, N 2, CO, CO 2, H 2, H 2 O, NH 3, CH 4, C 2 H 2, C 2 H It is preferable to contain at least one selected from the group consisting of 4 and C 2 H 6 .
In the method for producing float glass according to the present invention, it is preferable that a hydrogen radical density in an atmosphere until the plasma gas is jetted and reaches the molten metal exposed portion is 1 × 10 11 / cm 3 or more.
In the method of manufacturing float glass according to the present invention, it is preferable to jet plasma gas at a linear velocity of 0.1 to 200 m / s to the molten metal exposed portion.
In the method of manufacturing float glass according to the present invention, the plasma gas is injected from a plasma injection device provided opposite to the upper side of the molten metal exposed portion,
The plasma injection apparatus includes a plasma gas injection unit that injects plasma gas.
The plasma gas injection unit includes a plurality of plasma generators.
It is preferable that the electron density of the said plasma gas in the plasma-ized area | region which plasmifies the gas introduce | transduced into the said plasma generator is 1 * 10 < 13 > / cm < 3 > or more.
In the method for producing float glass according to the present invention, in the molten metal exposed portion, the oxygen potential of the molten metal after the plasma gas injection is not more than half the oxygen potential of the molten metal before the plasma gas injection. preferable.
In the method of producing float glass according to the present invention, the temperature of the molten metal to which plasma gas is injected is preferably 900 ° C. or less.
Moreover, this invention shape | molds the molten glass obtained by melt | dissolving a glass raw material on glass ribbon on the molten metal in a float bath, slow-cools the obtained glass ribbon, and manufactures float glass which obtains plate glass. In the apparatus, a plasma injection device is disposed above the molten metal exposed portion exposed to the atmosphere in the float bath, and the plasma injection device includes a plasma gas injection portion and the plasma gas injection portion. There is provided a float glass manufacturing apparatus comprising: a supporting portion for supporting, wherein the plasma gas injection portion injects plasma gas to the molten metal exposed portion.
In the float glass manufacturing apparatus of the present invention, the plasma gas injection unit includes a plurality of plasma generators.
It is preferable that the plasma generating device is disposed such that the longitudinal direction of the plasma generating device coincides with the flow direction of the glass ribbon.
In the plasma generator of the float glass manufacturing apparatus of the present invention, the cross-sectional shape of the gas discharge part is preferably rectangular.

 本発明によれば、簡便な製造条件で品質の良いフロートガラスを製造できる。 According to the present invention, good quality float glass can be manufactured under simple manufacturing conditions.

図1は、フロートバスの下部構造の一構成例を示した平面図である。FIG. 1 is a plan view showing a configuration example of the lower structure of the float bath. 図2は、図1のI-I線部分断面図である。FIG. 2 is a partial cross-sectional view taken along line II of FIG. 図3(a)および3(b)は、プラズマ噴射装置の要部模式図であり、図3(a)は平面方向から見た模式図、図3(b)は図2の断面方向から見た模式図である。3 (a) and 3 (b) are schematic views of the main part of the plasma injection apparatus, FIG. 3 (a) is a schematic view as viewed from the plane direction, and FIG. 3 (b) is viewed from the cross sectional direction of FIG. FIG. 図4(a)は、プラズマ発生装置の一構成例を示した断面図であり、図4(b)は、図4(a)のII-II線部分断面図である。FIG. 4 (a) is a cross-sectional view showing one configuration example of the plasma generator, and FIG. 4 (b) is a partial cross-sectional view taken along line II-II of FIG. 4 (a). 図5(a)は、プラズマ発生装置の別の一構成例を示した断面図であり、図5(b)は、図5(a)のIII-III線部分断面図である。FIG. 5 (a) is a cross-sectional view showing another configuration example of the plasma generator, and FIG. 5 (b) is a partial cross-sectional view taken along line III-III of FIG. 5 (a). 図6は、板ガラス温度500℃の実施例と比較例のSnO2還元速度を示した図である。FIG. 6 is a view showing the SnO 2 reduction rate of the example of the plate glass temperature of 500 ° C. and the comparative example. 図7は、板ガラス温度625℃の実施例と比較例のSnO2還元速度を示した図である。FIG. 7 is a view showing SnO 2 reduction rates of the example of the sheet glass temperature of 625 ° C. and the comparative example. 図8は、板ガラス温度750℃の実施例と比較例のSnO2還元速度を示した図である。FIG. 8 is a view showing the SnO 2 reduction rate of the example of the plate glass temperature of 750 ° C. and the comparative example. 図9は、SnO2還元速度のプラズマガス噴射部位-被噴射部位間の距離依存性を示した図である。FIG. 9 is a graph showing the distance dependency between the plasma gas injection site and the injection site of the SnO 2 reduction rate. 図10は、SnO2還元速度のプラズマガスの線速依存性を示した図である。FIG. 10 shows the linear velocity dependency of the plasma gas of the SnO 2 reduction rate. 図11は、プラズマ発生装置の第2排出部有無によるSnO2還元速度の差異を示した図である。FIG. 11 is a diagram showing the difference in the SnO 2 reduction rate depending on the presence or absence of the second discharge part of the plasma generator. 図12は、プラズマガスの噴射前後における溶融錫の酸素ポテンシャルの時間的推移を示した図である。FIG. 12 is a diagram showing the temporal transition of the oxygen potential of molten tin before and after the injection of plasma gas.

 以下、図面を参照にして本発明の一実施態様におけるフロートガラスの製造方法、およびフロートガラスの製造装置について説明する。
 本発明は、ガラス原料を溶解して得た溶融ガラスを、フロートバス内の溶融金属上でガラスリボンに成形し、得られたガラスリボンを徐冷して板ガラスを得る。
Hereinafter, a method of manufacturing float glass and an apparatus for manufacturing float glass according to an embodiment of the present invention will be described with reference to the drawings.
In the present invention, a molten glass obtained by melting a glass material is formed into a glass ribbon on molten metal in a float bath, and the obtained glass ribbon is gradually cooled to obtain a sheet glass.

 図1は、フロートバスの下部構造の一構成例を示した平面図であり、図2は、図1のI-I線部分断面図である。
 図示したフロートバス100は、溶融錫20を収容する溶融金属槽10、溶融金属槽10の上方に配設されるルーフ12等で構成される。
 なお、溶融金属槽10に収容されている金属は、錫合金、錫以外の金属またはその合金であってもよい。錫合金は、例えば、錫と銅の合金である。また、錫以外の金属は、例えば、ビスマスである。また、錫以外の金属の合金は、例えば、ビスマスと銅の合金である。
FIG. 1 is a plan view showing a configuration example of the lower structure of the float bath, and FIG. 2 is a partial cross-sectional view taken along the line II of FIG.
The illustrated float bath 100 is constituted by a molten metal tank 10 for containing molten tin 20, a roof 12 disposed above the molten metal tank 10, and the like.
The metal contained in the molten metal tank 10 may be a tin alloy, a metal other than tin, or an alloy thereof. The tin alloy is, for example, an alloy of tin and copper. The metal other than tin is, for example, bismuth. Moreover, alloys of metals other than tin are, for example, alloys of bismuth and copper.

 溶融金属槽10の溶融錫20上には、ガラス原料を溶解して得た溶融ガラスが連続的に供給される。溶融金属槽10の溶融錫20上で溶融ガラスを流動させて、帯状のガラスリボンGに成形する。ガラスリボンGは、図中矢印方向に移動する。以下、本明細書において、図中矢印方向をガラスリボンGの流れ方向、矢印方向に直交する方向をガラスリボンGの幅方向という。また、本明細書において、「流れ方向」および「幅方向」はそれぞれ「ガラスリボンGの流れ方向」及び「ガラスリボンGの幅方向」と一致するものとする。 The molten glass obtained by melting the glass raw material is continuously supplied onto the molten tin 20 of the molten metal tank 10. The molten glass is made to flow on the molten tin 20 of the molten metal tank 10 and formed into a strip-like glass ribbon G. The glass ribbon G moves in the direction of the arrow in the figure. Hereinafter, in the present specification, the arrow direction in the drawing is referred to as the flow direction of the glass ribbon G, and the direction orthogonal to the arrow direction is referred to as the width direction of the glass ribbon G. Further, in the present specification, “flow direction” and “width direction” correspond to “flow direction of glass ribbon G” and “width direction of glass ribbon G”, respectively.

 溶融金属槽10は、ガラスリボンGの流れ方向における上流側から、幅が広いワイド域Z1、幅が狭くなる中間域Z2、幅が狭いナロー域Z3をこの順に備える。ガラスリボンGと、溶融金属槽10の側壁と、の間(以下、ガラスリボンGの左右両側と記載する場合がある。)には、フロートバス100内の雰囲気に溶融錫20が露出した溶融金属露出部22が存在する。ナロー域Z3のガラスリボンGの左右両側に存在する溶融金属露出部22の上方には、プラズマ噴射装置30が配置されている。
 プラズマ噴射装置30は、プラズマガス噴射部31と、プラズマガス噴射部31を支持する支持部32とを備える。プラズマガス噴射部31は、支持部32の下方に突出して設けられる。プラズマガス噴射部31は、後述する複数のプラズマ発生装置40aによって構成され、プラズマ化したガス(以下、プラズマガスという。)を溶融金属露出部22に向けて噴射する。支持部32の内部は、プラズマ化するガスをプラズマ発生装置40aに供給するための配管と、プラズマ発生装置40aの電極に電圧をかけるための配線とが設けられる。
 プラズマガス噴射部31は、支持部32の内部に設けられてもよい。この場合、支持部32は、少なくともプラズマ発生装置40aを収納するための高さを備えなければならない。
The molten metal tank 10 includes, from the upstream side in the flow direction of the glass ribbon G, a wide area Z1 having a wide width, an intermediate area Z2 having a narrow width, and a narrow area Z3 having a narrow width in this order. A molten metal in which molten tin 20 is exposed to the atmosphere in the float bath 100 between the glass ribbon G and the side wall of the molten metal tank 10 (hereinafter sometimes referred to as the left and right sides of the glass ribbon G) Exposed portion 22 is present. The plasma injection apparatus 30 is arrange | positioned above the molten metal exposed part 22 which exists in the left-right both sides of the glass ribbon G of narrow area Z3.
The plasma injection device 30 includes a plasma gas injection unit 31 and a support unit 32 that supports the plasma gas injection unit 31. The plasma gas injection unit 31 is provided to protrude below the support unit 32. The plasma gas injection unit 31 is constituted by a plurality of plasma generators 40 a to be described later, and injects a plasmatized gas (hereinafter referred to as a plasma gas) toward the molten metal exposed unit 22. Inside the support portion 32, a pipe for supplying a gas to be converted into plasma to the plasma generator 40a, and a wire for applying a voltage to the electrode of the plasma generator 40a are provided.
The plasma gas injection unit 31 may be provided inside the support unit 32. In this case, the support 32 should have at least a height for housing the plasma generator 40a.

 図3は、プラズマ噴射装置の要部模式図であり、図3(a)は平面方向から見た模式図、図3(b)は図2の断面方向から見た模式図である。
 プラズマ噴射装置30は、プラズマガス噴射部31と、支持部32とを備える。図3(a)に示すプラズマガス噴射部31は、8個のプラズマ発生装置40aによって構成され、プラズマガス噴射部31の幅方向距離がW1、流れ方向距離がL1である。ここで、「プラズマガス噴射部31の幅方向距離」とは、ガラスリボンの幅方向に沿った、プラズマガス噴射部31の距離(長さ)を意味する。また、「プラズマガス噴射部31の流れ方向距離」とは、ガラスリボンの流れ方向に沿った、プラズマガス噴射部31の距離(長さ)を意味する。
 プラズマ発生装置40aは、プラズマ発生装置40aの長手方向と、ガラスリボンの流れ方向とが一致するように配置されてもよい。図3(a)では、プラズマ発生装置40aは、ガラスリボンの流れ方向に沿って2列、ガラスリボンの幅方向に沿って4列に並べて配置されている。
 プラズマ発生装置40aは、ガラスリボンの流れ方向に沿って1~6列、ガラスリボンの幅方向に沿って1~15列に並べて配置されるのが好ましい。また、プラズマ発生装置40aは、プラズマ装置40aの長手方向と、ガラスリボンの幅方向とが一致するように配置されてもよい。この場合、プラズマ発生装置40aは、ガラスリボンの流れ方向に沿って1~15列、ガラスリボンの幅方向に沿って1~6列に並べて配置されるのが好ましい。
 隣り合うプラズマ発生装置40a間には、ガラスリボンの流れ方向または幅方向に沿って隙間が設けられてもよい。隙間は、プラズマガスをガラスリボンの流れ方向または幅方向に沿って均一に噴射するためには、小さい方が好ましい。
 プラズマガス噴射部31は、プラズマ発生装置40aの全部または一部を、後述するプラズマ発生装置40bに置き換えてもよい。
FIG. 3 is a schematic view of the main part of the plasma injection device, FIG. 3 (a) is a schematic view as viewed from the plane direction, and FIG. 3 (b) is a schematic view as viewed from the cross sectional direction of FIG.
The plasma injection device 30 includes a plasma gas injection unit 31 and a support unit 32. The plasma gas injection unit 31 shown in FIG. 3A is configured of eight plasma generators 40a, and the distance in the width direction of the plasma gas injection unit 31 is W1, and the flow direction distance is L1. Here, “the distance in the width direction of the plasma gas injection unit 31” means the distance (length) of the plasma gas injection unit 31 along the width direction of the glass ribbon. Moreover, "the flow direction distance of the plasma gas injection part 31" means the distance (length) of the plasma gas injection part 31 along the flow direction of the glass ribbon.
The plasma generator 40a may be arranged such that the longitudinal direction of the plasma generator 40a and the flow direction of the glass ribbon coincide. In FIG. 3A, the plasma generating devices 40a are arranged in two rows along the flow direction of the glass ribbon and in four rows along the width direction of the glass ribbon.
The plasma generating devices 40a are preferably arranged in 1 to 6 rows along the flow direction of the glass ribbon and in 1 to 15 rows along the width direction of the glass ribbon. In addition, the plasma generation device 40a may be arranged such that the longitudinal direction of the plasma device 40a and the width direction of the glass ribbon coincide with each other. In this case, it is preferable that the plasma generating devices 40a be arranged in 1 to 15 rows along the flow direction of the glass ribbon and in 1 to 6 rows along the width direction of the glass ribbon.
A gap may be provided between the adjacent plasma generation devices 40a along the flow direction or the width direction of the glass ribbon. The gap is preferably as small as possible in order to spray the plasma gas uniformly along the flow direction or width direction of the glass ribbon.
The plasma gas injection unit 31 may replace the whole or a part of the plasma generator 40a with a plasma generator 40b described later.

 図4(a)は、プラズマ発生装置40aの一構成例を示した断面図であり、図4(b)は、図4(a)のII-II線部分断面図である。図4(a)に示すプラズマ発生装置40aにおいて、アルミナ等の焼結体からなる筐体41の上部には、プラズマ化するガスを導入するガス導入部42が設けられている。ガス導入部42の下方には、導入したガスをプラズマ化するプラズマ化領域Pが存在する。プラズマ化領域Pには、筐体41の側面から間隔を開けて2つの電極44が挿入されており、ガス導入部42から連続的にガスを導入しながら、電極44間に所定の電圧を印可して放電を生じさせることにより、導入したガスをプラズマ化する。プラズマ化したガス(プラズマガス)は筐体41の下部に設けられたガス排出部43から排出される。
 図4(b)に示すように、ガス排出部43の断面形状は、電極44の長手方向を長辺とする矩形であり、短辺が特に短い線状の矩形(スリット)であることが好ましい。これにより、ガス排出部43から排出されるプラズマガスの反応活性種が多くなるため、酸化錫の還元が促進される。
FIG. 4 (a) is a cross-sectional view showing an example of the configuration of the plasma generator 40a, and FIG. 4 (b) is a partial cross-sectional view taken along line II-II of FIG. 4 (a). In the plasma generator 40a shown in FIG. 4A, a gas introduction unit 42 for introducing a gas to be plasmatized is provided on the top of a housing 41 made of a sintered body such as alumina. Below the gas introduction part 42, there is a plasma conversion region P for converting the introduced gas into plasma. In the plasma conversion region P, two electrodes 44 are inserted at intervals from the side surface of the housing 41, and a predetermined voltage is applied between the electrodes 44 while continuously introducing a gas from the gas introduction unit 42. The introduced gas is plasmified by generating discharge. The gas (plasma gas) converted into plasma is discharged from a gas discharge unit 43 provided at the lower part of the housing 41.
As shown in FIG. 4B, it is preferable that the cross-sectional shape of the gas discharge part 43 is a rectangle whose long side is the longitudinal direction of the electrode 44 and whose short side is a particularly short linear rectangle (slit). . As a result, the reactive species of the plasma gas discharged from the gas discharge unit 43 increase, and the reduction of tin oxide is promoted.

 図5(a)は、プラズマ発生装置の別の一構成例を示した断面図であり、図5(b)は、図5(a)のIII-III線部分断面図である。図5(a)に示すプラズマ発生装置40bでは、ガス排出部(第1排出部)43の下側に第2排出部45が設けられている。第2排出部45では、複数の孔が直線状に配列しており、電極44の長手方向に沿って一様な密度のラジカルを噴射することができる。図5(b)に示すように、第2排出部45に設けられた孔の断面形状は、円であるが、楕円や三角形、四角形等の多角形であってもよい。これにより、プラズマガスの処理対象物への放電現象を抑制することができる。 FIG. 5 (a) is a cross-sectional view showing another configuration example of the plasma generator, and FIG. 5 (b) is a partial cross-sectional view taken along line III-III of FIG. 5 (a). In the plasma generator 40 b shown in FIG. 5A, the second discharge unit 45 is provided below the gas discharge unit (first discharge unit) 43. In the second discharge portion 45, a plurality of holes are linearly arranged, and radicals having a uniform density can be jetted along the longitudinal direction of the electrode 44. As shown in FIG. 5B, the cross-sectional shape of the hole provided in the second discharge part 45 is a circle, but it may be a polygon such as an ellipse, a triangle, or a square. Thereby, the discharge phenomenon to the process target object of plasma gas can be suppressed.

 図5(b)に示すプラズマ発生装置40bにおいて、プラズマ発生装置40bの下面全体に占める孔の総断面積の比率が0.01~5%であることが好ましい。 In the plasma generator 40b shown in FIG. 5 (b), the ratio of the total cross-sectional area of the holes to the entire lower surface of the plasma generator 40b is preferably 0.01 to 5%.

 図4(a)および図5(a)に示すプラズマ発生装置40a,40bは、プラズマ放電形式がホローカソード放電であることが好ましい。但し、これに限定されず、プラズマ発生装置は、プラズマ放電形式が誘電体バリア放電(DBD)、アーク放電であってもよい。また、電極を用いない高周波誘導放電、マイクロ波放電であってもよい。また、高周波電源による放電であってもよい。 In the plasma generating devices 40a and 40b shown in FIGS. 4 (a) and 5 (a), the plasma discharge type is preferably a hollow cathode discharge. However, the present invention is not limited to this, and the plasma generation device may be a dielectric barrier discharge (DBD) or arc discharge as a plasma discharge type. Moreover, the high frequency induction discharge which does not use an electrode, and a microwave discharge may be sufficient. In addition, discharge by a high frequency power source may be used.

 本発明の実施態様は、溶融金属露出部22に対し、プラズマ噴射装置30のプラズマガス噴射部31からプラズマガスを噴射する。これにより、以下に記載するメカニズムにしたがって、溶融錫20の表面近傍に存在する酸化錫が還元される。
 下記式(1)に示すように、溶融金属槽10の溶融錫20に、フロートバス100内の雰囲気中の酸素、または溶融ガラス中の酸素が溶解することにより酸化錫SnOx(0<x≦2)が生じる。
 Sn+O2 → SnOx (1)
 フロートバス100内の雰囲気中に、高純度の窒素ガスとともに水素ガスが吹き込まれているのは、下記式(2)に示すように、雰囲気中の水素により、溶融錫20中の酸化錫SnOxを還元させて金属錫Snに戻すためである。
 SnOx+H2→ Sn+H2O(g) (2)
 溶融金属露出部22に対し、プラズマガスを噴射すると、プラズマガス中に存在する水素や、フロートバス100内の雰囲気中の水素がラジカル化されたり、イオン化されたりする。その結果、反応活性種である水素ラジカルや水素イオンが、より高密度で供給されることになるので、上記式(2)に示す反応が促進される。
 なお、プラズマガスを噴射すると、上記式(2)に示す反応が促進されることは、後述する実施例により確認されている。
In the embodiment of the present invention, a plasma gas is injected from the plasma gas injection unit 31 of the plasma injection device 30 to the molten metal exposed unit 22. Thereby, the tin oxide present near the surface of the molten tin 20 is reduced according to the mechanism described below.
As shown in the following formula (1), the oxygen in the atmosphere in the float bath 100 or the oxygen in the molten glass dissolves in the molten tin 20 of the molten metal tank 10, and tin oxide SnO x (0 <x ≦ 2) will occur.
Sn + O 2 → SnO x (1)
The reason why hydrogen gas is blown into the atmosphere in the float bath 100 together with high purity nitrogen gas is that tin oxide SnO x in molten tin 20 is produced by hydrogen in the atmosphere as shown in the following formula (2). Is reduced to metal tin Sn.
SnO x + H 2 → Sn + H 2 O (g) (2)
When the plasma gas is injected to the molten metal exposed portion 22, hydrogen present in the plasma gas and hydrogen in the atmosphere in the float bath 100 are radicalized or ionized. As a result, hydrogen radicals and hydrogen ions, which are reactive species, are supplied at a higher density, thereby promoting the reaction represented by the formula (2).
In addition, it is confirmed by the Example mentioned later that reaction shown by said Formula (2) will be accelerated | stimulated when plasma gas is injected.

 フロートガラスの下面に付着して錫欠点を生じさせるのは、溶融錫の表面近傍に存在する酸化錫である。
 本発明の実施態様は、溶融金属露出部22に対し、プラズマガスを噴射することにより、溶融錫20の表面近傍に存在する酸化錫の還元が促進されるため、錫欠点が少ない品質の良いフロートガラスを製造できる。
It is the tin oxide present near the surface of the molten tin that adheres to the lower surface of the float glass and causes a tin defect.
According to the embodiment of the present invention, since the reduction of tin oxide present in the vicinity of the surface of the molten tin 20 is promoted by injecting the plasma gas to the molten metal exposed portion 22, the float of good quality with few tin defects. Can produce glass.

 本発明の実施態様は、溶融金属露出部22の幅方向距離(ガラスリボンGの幅方向に沿った溶融金属露出部22の距離(長さ)であって、ガラスリボンGと溶融金属槽10の内壁との距離である)をW(mm)とするとき、プラズマガスを幅方向距離0.3W以上で噴射することが溶融錫20の表面近傍に存在する酸化錫の還元を促進する作用を発揮するうえで好ましい。プラズマガスを噴射する幅方向距離は、プラズマガス噴射部31の幅方向距離W1と一致する。幅方向距離W1は、0.5W以上であることがより好ましく、0.7W以上であることがさらに好ましい。但し、幅方向距離W1がW以上だと、ガラスリボンGの上方にプラズマ噴射装置30が存在することになるため、プラズマ噴射装置30に付着した異物がガラスリボンGに落下して欠点を生じさせるおそれがある。そのため、幅方向距離W1がW以下であることが好ましい。
 図1,2において、プラズマ噴射装置30の一部が溶融金属槽10の外部に位置しているのは、電源等の外部設備と接続するためである。
The embodiment of the present invention is the distance in the width direction of the molten metal exposed portion 22 (the distance (length) of the molten metal exposed portion 22 along the width direction of the glass ribbon G). When the distance to the inner wall is W (mm), injecting the plasma gas at a distance of 0.3 W or more in the width direction exhibits the function of promoting the reduction of tin oxide present in the vicinity of the surface of molten tin 20 It is preferable to do. The width direction distance for injecting the plasma gas is equal to the width direction distance W1 of the plasma gas injection unit 31. The widthwise distance W1 is more preferably 0.5 W or more, further preferably 0.7 W or more. However, if the widthwise distance W1 is equal to or more than W, the plasma jet device 30 is present above the glass ribbon G. Therefore, foreign matter attached to the plasma jet device 30 falls on the glass ribbon G to cause a defect. There is a fear. Therefore, the widthwise distance W1 is preferably W or less.
In FIGS. 1 and 2, a part of the plasma injection device 30 is located outside the molten metal tank 10 in order to connect with external equipment such as a power supply.

 図1に示すように、溶融金属露出部22の幅方向距離Wは、溶融金属露出部22の溶融金属槽10における位置、具体的には、ガラスリボンGの流れ方向における位置により異なる。
 また、溶融金属露出部22の幅方向距離Wは、溶融金属槽10の寸法や形状によっても異なる。
 プラズマ噴射装置30を配置する部位における溶融金属露出部22の幅方向距離Wは、100~600mmであることが好ましく、200~500mmであることがより好ましい。その理由は以下に記載する通りである。
 幅方向距離Wが100mm以上だと、ガラスリボンGが幅方向に変動しても、ガラスリボンGが溶融金属槽10の側壁に接触して付着するトラブルが発生するのを防止することができる。また、幅方向距離Wが600mm以下だと、溶融金属槽10の幅方向の寸法を大きくせずに、幅が広いガラスリボンGを効率良く成形することができる。
As shown in FIG. 1, the widthwise distance W of the molten metal exposed portion 22 differs depending on the position of the molten metal exposed portion 22 in the molten metal tank 10, specifically, the position in the flow direction of the glass ribbon G.
The widthwise distance W of the molten metal exposed portion 22 also differs depending on the size and shape of the molten metal tank 10.
The widthwise distance W of the molten metal exposed portion 22 at the portion where the plasma injection device 30 is disposed is preferably 100 to 600 mm, and more preferably 200 to 500 mm. The reason is as described below.
When the widthwise distance W is 100 mm or more, even if the glass ribbon G fluctuates in the widthwise direction, it is possible to prevent the occurrence of a trouble in which the glass ribbon G contacts and adheres to the side wall of the molten metal tank 10. Moreover, if the width direction distance W is 600 mm or less, the glass ribbon G having a wide width can be efficiently formed without increasing the size in the width direction of the molten metal tank 10.

 本発明の実施態様は、プラズマガスを流れ方向距離10~400mmで噴射することが好ましい。プラズマガスを噴射する流れ方向距離は、プラズマガス噴射部31の流れ方向距離L1と一致する。流れ方向距離L1は、50~400mmであることがより好ましい。ここで、「プラズマガス噴射部31の流れ方向距離L1」とは、ガラスリボンの流れ方向に沿った、プラズマガス噴射部31の距離(長さ)を意味する。
 本発明の実施態様は、プラズマガスを、溶融金属露出部22から上方に鉛直方向距離を5~30mm離間させて噴射することが好ましい。この鉛直方向距離は、プラズマガス噴射部31と、溶融金属露出部22と、の鉛直方向距離と一致する。鉛直方向距離が大きくなると、プラズマガスの噴射による上述した効果が低下する。但し、鉛直方向距離が小さすぎると、プラズマガス噴射部31が、溶融金属露出部22や溶融錫20上に存在するガラスリボンGと、接触するおそれがある。鉛直方向距離は、5~20mmであることがより好ましい。
 図1,2では、ガラスリボンGの左右両側にそれぞれ1基のプラズマ噴射装置30を配置している。溶融金属露出部22の流れ方向に沿って複数のプラズマ噴射装置30を配置する場合、複数のプラズマ噴射装置間の距離は特に限定されず、配置するプラズマ噴射装置の数と、プラズマ噴射装置におけるガラスリボンGの流れ方向距離と、に応じて適宜選択すればよい。
Embodiments of the present invention preferably inject plasma gas at a flow distance of 10 to 400 mm. The flow direction distance for injecting the plasma gas coincides with the flow direction distance L1 of the plasma gas injection unit 31. The flow direction distance L1 is more preferably 50 to 400 mm. Here, “the flow direction distance L1 of the plasma gas injection unit 31” means the distance (length) of the plasma gas injection unit 31 along the flow direction of the glass ribbon.
In the embodiment of the present invention, it is preferable to inject the plasma gas at a distance of 5 to 30 mm above the molten metal exposed portion 22 in the vertical direction. The vertical distance corresponds to the vertical distance between the plasma gas injection unit 31 and the molten metal exposed unit 22. As the vertical distance increases, the above-described effects of the plasma gas injection decrease. However, if the vertical distance is too small, the plasma gas injection unit 31 may come into contact with the molten metal exposed portion 22 and the glass ribbon G present on the molten tin 20. The vertical distance is more preferably 5 to 20 mm.
In FIGS. 1 and 2, one plasma injection device 30 is disposed on each of the left and right sides of the glass ribbon G. When arranging a plurality of plasma injection devices 30 along the flow direction of molten metal exposed portion 22, the distance between the plurality of plasma injection devices is not particularly limited, and the number of arranged plasma injection devices and the glass in the plasma injection device It may be appropriately selected according to the flow direction distance of the ribbon G.

 ここで、図4(a)から明らかなように、プラズマ発生装置40aがプラズマガスを噴射する範囲は、ガス排出部43の寸法で定まり、ガス排出部43の寸法は電極44間距離と概ね一致する。電極間距離は1~600mmであることが好ましい。筐体41の長手方向距離は、5~600mmであることが好ましい。また、図4(a),図5(a)における筐体41の紙面奥行き方向の距離は、5~400mmであることが好ましい。 Here, as apparent from FIG. 4A, the range in which the plasma generating apparatus 40a injects the plasma gas is determined by the size of the gas discharge part 43, and the size of the gas discharge part 43 substantially matches the distance between the electrodes 44. Do. The distance between the electrodes is preferably 1 to 600 mm. The longitudinal distance of the housing 41 is preferably 5 to 600 mm. Further, it is preferable that the distance in the paper surface depth direction of the housing 41 in FIGS. 4A and 5A is 5 to 400 mm.

 上述したように、プラズマガスの噴射により、上記式(2)に示す反応を促進するため、プラズマガスは、不活性ガスおよび/または還元性ガスを含有することが好ましい。なお、プラズマガスに含まれるガス種は、ガス導入部42から導入されるガスと同一である。
 不活性ガスとしては、He,Ne,Ar,N2が例示される。還元性ガスとしては、CO,CO2や、分子中にHを含むH2,H2O,NH3,CH4,C22,C24,C26が例示される。これらの中でも、プラズマガスは、He,Ne,Ar,N2,CO,CO2,H2,H2O,NH3,CH4,C22,C24およびC2からなる群から選択される少なくとも一種を含有することが好ましい。
 したがって、プラズマガスは、He,Ne,Ar,N2といった不活性ガスのみを含有するものであってもよい。これらの中でも、Ar,N2がコスト面から好ましい。ArおよびN2のうち、1種のみを使用してもよく、2種併用してもよい。
 還元性ガスとしては、コストが安く、反応活性種の生成量が多いことから、H2が好ましい。
As described above, the plasma gas preferably contains an inert gas and / or a reducing gas in order to promote the reaction represented by the formula (2) by the injection of the plasma gas. The gas type contained in the plasma gas is the same as the gas introduced from the gas introduction unit 42.
The inert gas, He, Ne, Ar, N 2 is illustrated. The reducing gas, CO, CO 2 and, H 2 containing H in the molecule, H 2 O, NH 3, CH 4, C 2 H 2, C 2 H 4, C 2 H 6 can be exemplified. Among them, plasma gas, He, Ne, Ar, from N 2, CO, CO 2, H 2, H 2 O, NH 3, CH 4, C 2 H 2, C 2 H 4 and C 2 H 6 It is preferable to contain at least one selected from the group consisting of
Therefore, the plasma gas may contain only an inert gas such as He, Ne, Ar, N 2 . Among these, Ar and N 2 are preferable in terms of cost. Only one of Ar and N 2 may be used, or two or more of them may be used in combination.
As the reducing gas, H 2 is preferable because the cost is low and the amount of reactive species is large.

 プラズマガスは、H2を含有することがより好ましい。この場合、H2のみを含有してもよく、H2とともに、不活性ガスを含有してもよい。H2とともに、不活性ガスを含有する場合、例えば、H2とArを含有するガス、H2とN2を含有するガス、H2、ArおよびN2を含有するガスとすることができる。 More preferably, the plasma gas contains H 2 . In this case, only H 2 may be contained, and an inert gas may be contained together with H 2 . When an inert gas is contained together with H 2 , for example, a gas containing H 2 and Ar, a gas containing H 2 and N 2 , a gas containing H 2 , Ar and N 2 can be used.

 プラズマガスがH2を含有する場合のように、反応活性種である水素ラジカルを積極的に生成するようなガス種を選択した場合、プラズマガスが噴射され、溶融金属露出部22に到達するまでの雰囲気における水素ラジカル密度が、室温換算で1×1011/cm3以上であることが好ましく、1×1012/cm3以上であることがより好ましい。水素ラジカル密度が1×1011/cm3以上だと、フロートバス100内の雰囲気の最低温度部でも、溶融錫20の表面近傍に存在する酸化錫の還元が促進される。
 なお、プラズマガスが不活性ガスのみを含有する場合、フロートバス100内の雰囲気中の水素が、プラズマガス噴射部31と、溶融金属露出部22と、の間に巻き込まれてラジカル化されるため、前記水素ラジカル密度は1×1011/cm3程度となる。
 水素ラジカル密度は、真空紫外分光法により測定した。光源としてスペクトルが既知のマイクロホローカソードプラズマ発光光源を用い、検出器として光電子増倍管付きの単色光分光器を用いた。図4(a)、図5(a)に示すプラズマ発生装置40a、40bの紙面手前側にある光源を用いて、プラズマガス噴射部位の長手方向中心位置から紙面下側に0~10mm離れた位置をめがけて光を入射し、プラズマ発生装置40a、40bの紙面奥側に控えた検出器で吸収強度を測定した。これより、既知のスペクトル情報から水素ラジカル密度を計算して求めた。
As in the case where the plasma gas contains H 2 , when a gas species that positively generates a hydrogen radical which is a reactive species is selected, the plasma gas is jetted and reaches the molten metal exposed portion 22 The hydrogen radical density in the atmosphere is preferably 1 × 10 11 / cm 3 or more, more preferably 1 × 10 12 / cm 3 or more, in terms of room temperature. When the hydrogen radical density is 1 × 10 11 / cm 3 or more, reduction of tin oxide present in the vicinity of the surface of the molten tin 20 is promoted even at the lowest temperature part of the atmosphere in the float bath 100.
When the plasma gas contains only an inert gas, hydrogen in the atmosphere in the float bath 100 is trapped between the plasma gas injection portion 31 and the molten metal exposed portion 22 to be radicalized. The hydrogen radical density is about 1 × 10 11 / cm 3 .
The hydrogen radical density was measured by vacuum ultraviolet spectroscopy. A microhollow cathode plasma light source having a known spectrum was used as a light source, and a monochromator with a photomultiplier was used as a detector. Using a light source on the front side of the plasma generator 40a, 40b shown in FIGS. 4 (a) and 5 (a), a position 0 to 10 mm below the paper from the longitudinal center of the plasma gas injection site. The light was made incident, and the absorption intensity was measured by a detector located on the back side of the plasma generating devices 40a and 40b as viewed in the drawing. From this, the hydrogen radical density was calculated from known spectral information.

 本発明の実施態様は、いずれのガス種を含有する場合も、プラズマガスを線速(室温換算)0.1~200m/sで噴射することが好ましい。線速が0.1m/s以上だと、水素ラジカルを溶融金属露出部22に十分に輸送できる。また、線速が200m/s以下だと、溶融金属露出部22の液面が変動するのを抑制することができる。 In the embodiment of the present invention, it is preferable to inject the plasma gas at a linear velocity (in terms of room temperature) of 0.1 to 200 m / s, regardless of which gas type is contained. If the linear velocity is 0.1 m / s or more, hydrogen radicals can be sufficiently transported to the molten metal exposed portion 22. In addition, when the linear velocity is 200 m / s or less, fluctuation of the liquid level of the molten metal exposed portion 22 can be suppressed.

 いずれのガス種を含有する場合も、プラズマ化領域Pにおけるプラズマガスの電子密度が、室温換算で1×1013/cm3以上であることが好ましい。
 プラズマガスの電子密度は、室温下でプラズマの発光分析における水素のバルマーベータ線のシュタルク拡がりを測定して算出した。図4(a)、図5(a)に示すプラズマ発生装置40a、40bの紙面下側で、プラズマガスの発光を、電荷結合素子配列付きのマルチチャンネル分光器によって検出した。プラズマガスの密度は、得られた水素のバルマーベータ線のシュタルク拡がりに起因する半値全幅から計算により求めた。
In the case of containing any gas species, it is preferable that the electron density of plasma gas in the plasma conversion region P is 1 × 10 13 / cm 3 or more in terms of room temperature.
The electron density of the plasma gas was calculated by measuring the Stark spread of the Balmer beta ray of hydrogen in emission analysis of plasma at room temperature. The emission of plasma gas was detected by a multi-channel spectroscope equipped with a charge coupled device array on the lower side of the surface of the plasma generating devices 40a and 40b shown in FIGS. 4 (a) and 5 (a). The density of the plasma gas was calculated from the full width at half maximum due to the Stark spread of the obtained Balmer beta ray of hydrogen.

 図1では、溶融金属露出部22のうち、ガラスリボンGの流れ方向下流側のナロー域Z3にプラズマ噴射装置30が配置されているが、これに限定されず、ガラスリボンGの流れ方向上流側のワイド域Z1や中間域Z2にプラズマ噴射装置を配置してもよい。
 但し、ガラスリボンの流れ方向上流側にプラズマ噴射装置を配置した場合、酸化錫から還元した溶融錫が再び酸化される可能性がある。そのため、ガラスリボンGの流れ方向下流側のナロー域Z3にプラズマ噴射装置30を配置することが好ましい。
In FIG. 1, the plasma injection device 30 is disposed in the narrow region Z3 of the molten metal exposed portion 22 on the downstream side of the flow direction of the glass ribbon G. However, the present invention is not limited thereto. The plasma injection device may be disposed in the wide area Z1 or the intermediate area Z2 of
However, when the plasma injection device is disposed on the upstream side in the flow direction of the glass ribbon, molten tin reduced from tin oxide may be oxidized again. Therefore, it is preferable to dispose the plasma injection device 30 in the narrow region Z3 on the downstream side of the flow direction of the glass ribbon G.

 溶融金属槽10内の溶融金属露出部22において、プラズマガス噴射後の酸素ポテンシャルは、プラズマガス噴射前の酸素ポテンシャルの1/2以下であることが好ましい。プラズマガスによる酸化錫の還元促進に伴い、溶融金属中の酸素ポテンシャルが低下するからである。
 酸素ポテンシャルは、ジルコニア式酸素センサーを用いて測定することができる。具体的には、金属製の測定電極と、常に酸素ポテンシャルが一定である参照電極と、センサーとを溶融金属槽10内に沈め、酸素ポテンシャルの差に起因して発生する電極間の電圧差から酸素ポテンシャルを求めることができる。なお、センサーは、高温下で酸素イオン導電性を発現する安定化ジルコニアを使用したものである。
In the molten metal exposed portion 22 in the molten metal tank 10, it is preferable that the oxygen potential after the plasma gas injection is not more than half the oxygen potential before the plasma gas injection. This is because the oxygen potential in the molten metal decreases as the reduction of tin oxide by the plasma gas is promoted.
The oxygen potential can be measured using a zirconia-based oxygen sensor. Specifically, the measurement electrode made of metal, the reference electrode whose oxygen potential is always constant, and the sensor are submerged in the molten metal tank 10, and the voltage difference between the electrodes generated due to the difference in oxygen potential The oxygen potential can be determined. In addition, the sensor uses the stabilized zirconia which expresses oxygen ion conductivity under high temperature.

 プラズマガスが噴射される溶融金属の温度に着目した場合、溶融金属温度が、900℃以下であることが好ましい。フロート法で製造するガラスの組成にもよるが、上記ナロー域Z3の溶融金属温度が、通常900℃以下であるためである。製造するガラスの組成より、プラズマガスが噴射される溶融金属の温度を900℃以下の温度域で適宜選択することが好ましい。なお、プラズマガスが噴射される溶融金属の温度の下限は特に限定されないが、溶融金属槽10内の溶融金属露出部22に対してプラズマガスを噴射するため、溶融金属温度は通常500℃以上である。 When focusing on the temperature of the molten metal to which the plasma gas is injected, the temperature of the molten metal is preferably 900 ° C. or less. Although it also depends on the composition of the glass produced by the float method, it is because the molten metal temperature in the narrow zone Z3 is usually 900 ° C. or less. From the composition of the glass to be produced, it is preferable to appropriately select the temperature of the molten metal to which the plasma gas is injected in the temperature range of 900 ° C. or less. The lower limit of the temperature of the molten metal to which the plasma gas is injected is not particularly limited, but the temperature of the molten metal is usually 500 ° C. or higher in order to inject the plasma gas to the molten metal exposed portion 22 in the molten metal tank 10. is there.

 本発明の実施態様は、フロート法で製造される板ガラスに幅広く適用できる。ガラス組成についても特に限定されず、ソーダライムシリケートガラス、アルミノシリケートガラス、ホウケイ酸ガラス、無アルカリガラス等、幅広い組成のガラスに適用できる。 Embodiments of the present invention are broadly applicable to sheet glass produced by the float process. The glass composition is also not particularly limited, and it can be applied to a wide range of glasses such as soda lime silicate glass, aluminosilicate glass, borosilicate glass, alkali-free glass and the like.

 本発明の実施態様により製造される板ガラスの厚さは特に限定されないが、0.1~2.0mmであることが好ましい。 The thickness of the glass sheet produced according to the embodiment of the present invention is not particularly limited, but preferably 0.1 to 2.0 mm.

 以下、実施例を用いて本発明をさらに説明する。
 実施例では、ガラス板上にスパッタ成膜されたSnO2膜に対して、プラズマガスを噴射した際のSnO2膜還元速度を以下に示す手順で評価した。
 ガラス板としては、20mm角の石英ガラス板を使用した。このガラス板の一方の主面上全面に、厚さ500nmのSnO2膜をスパッタ成膜した。その後、SnO2膜の中心φ5mmをマスキングし、その他のSnO2膜をエッチング溶液により除去し、マスキング部分のみにSnO2膜が残ったサンプルを作製した。これは、プラズマガスがSnO2膜全体に均一に処理されるようにするためであり、分析上の都合である。
 ガラス板を500℃、625℃または750℃に加熱した状態で、SnO2膜に対し、図5に示すプラズマ発生装置40bからプラズマガスを噴射した。
 図5(a)に示すプラズマ発生装置40bは、放電形式がマイクロホローカソード放電であり、電極44間の間隔は20mm、プラズマ化領域Pの下面から第1排出部43までの距離は6mmである。第2排出部45の高さは1mmであり、第2排出部45に形成された断面形状円形の孔の直径は0.5mmであり、プラズマ発生装置40bの下面全体に占める孔の総断面積の比率が0.55%である。
 プラズマ化領域Pの圧力を大気圧として、ガス導入部42からプラズマ化するガスとして、ArとH2の混合ガス(H2 8vol%)を線速12.1m/sで供給した。
 電極44間には周波数20kHzの高周波電源から9kVの電圧を印加した。
 プラズマガス噴射部位(第2排出部45下面)-被噴射部位(SnO2膜)間の距離は5mmとした。
 処理時間(プラズマガス噴射時間)は10sec~90secとした。
Hereinafter, the present invention will be further described using examples.
In the example, the reduction rate of the SnO 2 film when the plasma gas was jetted to the SnO 2 film formed by sputtering on the glass plate was evaluated according to the following procedure.
A 20 mm square quartz glass plate was used as the glass plate. A 500 nm thick SnO 2 film was formed by sputtering over the entire surface on one main surface of the glass plate. Thereafter, the center φ5 mm of the SnO 2 film was masked, the other SnO 2 films were removed by the etching solution, and a sample in which the SnO 2 film remained only in the masking portion was produced. This is to ensure that the plasma gas is uniformly processed over the SnO 2 film, which is an analytical convenience.
While the glass plate was heated to 500 ° C., 625 ° C. or 750 ° C., a plasma gas was injected from the plasma generator 40 b shown in FIG. 5 to the SnO 2 film.
The plasma generator 40b shown in FIG. 5A has a micro hollow cathode discharge type, the distance between the electrodes 44 is 20 mm, and the distance from the lower surface of the plasma conversion region P to the first discharge part 43 is 6 mm. . The height of the second discharge portion 45 is 1 mm, and the diameter of the circular hole having a cross-sectional shape formed in the second discharge portion 45 is 0.5 mm, and the total cross-sectional area of the holes occupies the entire lower surface of the plasma generator 40b The ratio of is 0.55%.
A mixed gas (H 2 8 vol%) of Ar and H 2 was supplied at a linear velocity of 12.1 m / s as a gas to be plasmatized from the gas introduction unit 42 with the pressure of the plasma conversion region P being atmospheric pressure.
A voltage of 9 kV was applied between the electrodes 44 from a high frequency power supply with a frequency of 20 kHz.
The distance between the plasma gas injection site (lower surface of the second discharge unit 45) and the injection site (SnO 2 film) was 5 mm.
The processing time (plasma gas injection time) was 10 sec to 90 sec.

 プラズマガス噴射後のSnO2膜を17.5%塩酸処理した後、蛍光X線分析(XRF)を実施した。プラズマガス噴射実施前のSnO2膜についてもXRFを実施した。
 XRFにより得られるTin-countから下記式を用いて換算残膜厚l(nm)を算出した。
l[nm]=500[nm]×プラズマガス噴射後(塩酸処理後)のTin-count/プラズマガス噴射実施前のTin-count
 処理時間(プラズマガス噴射時間)に対する換算残膜厚lをプロットし、その傾きをSnO2膜還元速度とした。
After the 17.5% hydrochloric acid treatment of the SnO 2 film after the plasma gas injection, fluorescent X-ray analysis (XRF) was performed. XRF was also performed on the SnO 2 film before the plasma gas injection.
The converted residual film thickness l (nm) was calculated from Tin-count obtained by XRF using the following equation.
l [nm] = 500 [nm] x Tin-count after plasma gas injection (after hydrochloric acid treatment) / Tin-count before plasma gas injection
The converted residual film thickness l was plotted with respect to the processing time (plasma gas injection time), and the slope was taken as the SnO 2 film reduction rate.

 比較例として、ガラス板を500℃、625℃または750℃に加熱した状態で、SnO2膜に対しプラズマガスを噴射せずに上記処理時間保持したサンプルについても塩酸処理後、XRFを実施した。 As a comparative example, in a state where the glass plate was heated to 500 ° C., 625 ° C. or 750 ° C., XRF was carried out after the hydrochloric acid treatment also for the sample held for the above processing time without injecting the plasma gas to the SnO 2 film.

 結果を図6~図11に示した。図6は、ガラス板温度500℃の実施例(プラズマ有)と比較例(プラズマ無)のSnO2還元速度を示した図である。図7は、ガラス板温度625℃の実施例(プラズマ有)と比較例(プラズマ無)のSnO2還元速度を示した図である。図8は、ガラス板温度750℃の実施例(プラズマ有)と比較例(プラズマ無)のSnO2還元速度を示した図である。これらの結果から、プラズマガスの噴射により、SnO2還元速度は向上したことがわかる。また、SnO2還元速度にはガラス板温度依存性があり、今回実施した温度域では、温度が高いほどSnO2還元速度が大きくなる傾向にある。 The results are shown in FIGS. FIG. 6 is a view showing the SnO 2 reduction rates of an example (with plasma) and a comparative example (without plasma) at a glass plate temperature of 500 ° C. FIG. 7 is a view showing the SnO 2 reduction rates of the example (with plasma) and the comparative example (without plasma) having a glass plate temperature of 625 ° C. FIG. 8 is a view showing the SnO 2 reduction rates of an example (with plasma) and a comparative example (without plasma) at a glass plate temperature of 750 ° C. From these results, it can be seen that the injection rate of plasma gas improved the SnO 2 reduction rate. In addition, the SnO 2 reduction rate has a glass plate temperature dependency, and in the temperature range implemented this time, the higher the temperature, the larger the SnO 2 reduction rate tends to be.

 ガラス板温度500℃、処理時間(プラズマガス噴射時間)60secとして、プラズマガス噴射部位(第2排出部45下面)-被噴射部位(SnO2膜)間の距離を5mm、10mm、15mmの3通りで実施した。図9は、この結果に基づき、SnO2還元速度のプラズマガス噴射部位-被噴射部位間の距離依存性を示した図である。図9から、SnO2還元速度は、プラズマガス噴射部位-被噴射部位間の距離に対して負の相関があり、プラズマガス噴射部位-被噴射部位間の距離が大きいほどSnO2還元速度が減少することがわかる。これは、距離が大きくなるほど反応活性種である水素ラジカルの失活量が多くなるためと考えられる。 The distance between the plasma gas injection site (the lower surface of the second discharge part 45) and the injection site (SnO 2 film) is set to 5 mm, 10 mm and 15 mm as a glass plate temperature of 500 ° C. and processing time (plasma gas injection time) 60 sec. Carried out in FIG. 9 is a diagram showing the distance dependency between the plasma gas injection site and the injection site of the SnO 2 reduction rate based on this result. From FIG. 9, the SnO 2 reduction rate has a negative correlation with the distance between the plasma gas injection site and the injection site, and the SnO 2 reduction speed decreases as the distance between the plasma gas injection site and the injection site increases. I know what to do. This is considered to be because the amount of deactivation of the hydrogen radical which is a reactive species increases as the distance increases.

 ガラス板温度500℃、処理時間(プラズマガス噴射時間)60secとして、ArとH2の混合ガス(H2 8vol%)を4.04m/s、12.1m/s、24.3m/sの3通りの線速でガス導入部42から供給して実施した。図10は、SnO2還元速度のプラズマガスの線速依存性を示した図である。図10から、SnO2還元速度は、プラズマガスの線速に対して正の相関があり、プラズマガスの線速が大きいほどSnO2還元速度が向上することがわかる。これは、プラズマガスの線速が大きいほど、反応活性種である水素ラジカルが失活せずに処理対象物に輸送される量が多くなるためと考えられる。 A mixed gas of Ar and H 2 (H 2 8 vol%) of 4.04 m / s, 12.1 m / s, 24.3 m / s 3 with a glass plate temperature of 500 ° C. and a treatment time (plasma gas injection time) of 60 sec. It supplied and implemented from the gas introduction part 42 at a linear velocity of the street. FIG. 10 shows the linear velocity dependency of the plasma gas of the SnO 2 reduction rate. It can be seen from FIG. 10 that the SnO 2 reduction rate has a positive correlation with the linear velocity of the plasma gas, and the larger the linear velocity of the plasma gas, the better the SnO 2 reduction rate. This is considered to be because, as the linear velocity of the plasma gas increases, the amount of hydrogen radicals that are reactive species is transported to the object without being deactivated.

 図11は、プラズマ発生装置の第2排出部有無によるSnO2還元速度の差異を示した図である。線速4.04m/s、プラズマガス噴射部位-被噴射部位(SnO2膜)間の距離は5mm、処理時間(プラズマガス噴射時間)60secとして、ガラス板温度を500℃、625℃、750℃の3通りで実施した。図4に示すプラズマ発生装置40aのガス排出部43の断面形状は、電極44の長手方向距離(長辺)20mm、短辺0.3mmの線状の矩形とした。また、図5に示すプラズマ発生装置40bの第2排出部45の断面形状は、21個の円が、直径0.5mm、ピッチ0.5mmで電極44の長手方向に沿って並べられたものとした。図11から、プラズマ発生装置40aの方がプラズマ発生装置40bよりも還元速度が速いことがわかる。これは、プラズマ発生装置40aに比べてプラズマ発生装置40bの方が、プラズマガスに接する壁の面積が大きくなるため、反応活性種が捕捉されて失活する量が増えたためと考えられる。 FIG. 11 is a diagram showing the difference in the SnO 2 reduction rate depending on the presence or absence of the second discharge part of the plasma generator. Assuming that the linear velocity is 4.04 m / s, the distance between the plasma gas injection site and the injection site (SnO 2 film) is 5 mm, and the processing time (plasma gas injection time) is 60 sec, the glass plate temperature is 500 ° C, 625 ° C, 750 ° C Carried out in three ways. The cross-sectional shape of the gas discharge part 43 of the plasma generator 40a shown in FIG. 4 was a linear rectangle having a distance (long side) of 20 mm and a short side of 0.3 mm in the longitudinal direction of the electrode 44. Further, in the cross-sectional shape of the second discharge part 45 of the plasma generator 40b shown in FIG. 5, 21 circles are arranged along the longitudinal direction of the electrode 44 with a diameter of 0.5 mm and a pitch of 0.5 mm. did. From FIG. 11, it can be seen that the reduction rate is faster in the plasma generator 40a than in the plasma generator 40b. This is considered to be because the area of the wall in contact with the plasma gas is larger in the plasma generating apparatus 40b than in the plasma generating apparatus 40a, and thus the amount of reactive species captured and inactivated is increased.

 図12は、プラズマガスの噴射前後における溶融錫の酸素ポテンシャルの時間的推移を示した図である。深さ25mmのアルミナるつぼに300gの錫を入れ、750℃に加熱して溶融錫とした。図4に示すプラズマ発生装置40aを用いてプラズマ化したArとH2の混合ガス(H2 4vol%)を溶融錫に噴射する前後で、溶融錫の酸素ポテンシャルをジルコニア式酸素センサーで測定した。溶融錫表面からプラズマ発生装置40aのガス排出部43までの距離は5mmとし、ジルコニア式酸素センサーの測定部は溶融錫表面から20mmの深さに設置した。図12の矢印は、ArとH2の混合ガスをプラズマ化させた時間域を示しており、この時間域ではプラズマ化させなかった時間域に比べて傾きの絶対値が大きい。これは、プラズマ化させた時間域の方が、酸素ポテンシャルの減衰速度が速いことを示している。
 また、図12の300分付近で、プラズマ化していなかったArとH2の混合ガスは、酸素ポテンシャルの常用対数値が-23付近に収束したのに対して、プラズマ化したArとH2の混合ガスは、380分付近で、酸素ポテンシャルの常用対数値が-24.3付近に収束した。これは、プラズマ化により溶融錫の酸素ポテンシャルの平衡値がより小さい値にずれた結果と考えられる。この平衡値は、溶融錫とプラズマ発生装置40aとの間の距離、プラズマガスの濃度、線速などによって変化するものと考えられる。
FIG. 12 is a diagram showing the temporal transition of the oxygen potential of molten tin before and after the injection of plasma gas. 300 g of tin was placed in a 25 mm deep alumina crucible and heated to 750 ° C. to form molten tin. The oxygen potential of molten tin was measured by a zirconia-type oxygen sensor before and after the mixed gas of Ar and H 2 ( 4 vol% of H 2 ) made into plasma was jetted to the molten tin using the plasma generator 40 a shown in FIG. 4. The distance from the molten tin surface to the gas discharge part 43 of the plasma generator 40a was 5 mm, and the measurement part of the zirconia type oxygen sensor was installed at a depth of 20 mm from the molten tin surface. The arrows in FIG. 12 indicate the time zone in which the mixed gas of Ar and H 2 is plasmatized, and in this time zone, the absolute value of the slope is larger than the time zone in which the plasmatization is not conducted. This indicates that the decay time of the oxygen potential is faster in the plasmad time zone.
Further, in the vicinity of 300 minutes in FIG. 12, a mixed gas of Ar and H 2, which was not plasma is that the common logarithm of the oxygen potential has converged in the vicinity of -23, plasma was Ar and H 2 In the mixed gas, the common logarithm value of the oxygen potential converged to around -24.3 at around 380 minutes. This is considered to be a result of the equilibrium of the oxygen potential of molten tin shifted to a smaller value by plasmatization. The equilibrium value is considered to change depending on the distance between the molten tin and the plasma generator 40a, the concentration of plasma gas, the linear velocity, and the like.

 本発明を詳細にまた特定の実施態様を参照して説明したが、本発明の精神と範囲を逸脱することなく様々な変更や修正を加えることができることは当業者にとって明らかである。
 本出願は、2017年11月7日出願の日本特許出願2017-214508に基づくものであり、その内容はここに参照として取り込まれる。
Although the invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on Japanese Patent Application No. 2017-214508 filed on Nov. 7, 2017, the contents of which are incorporated herein by reference.

 10:溶融金属槽
 12:ルーフ
 20:溶融錫
 22:溶融金属露出部
 30:プラズマ噴射装置
 31:プラズマガス噴射部
 32:支持部
 40a,40b:プラズマ発生装置
 41:筐体
 42:ガス導入部
 43:ガス排出部(第1排出部)
 44:電極
 45:第2排出部
 G:ガラスリボン
 P:プラズマ化領域
10: Molten metal tank 12: Roof 20: Molten tin 22: Molten metal exposed part 30: Plasma injection device 31: Plasma gas injection part 32: Support part 40a, 40b: Plasma generator 41: Housing 42: Gas introduction part 43 : Gas discharge unit (first discharge unit)
44: Electrode 45: Second discharge part G: Glass ribbon P: Plasmaized area

Claims (13)

 ガラス原料を溶解して得た溶融ガラスを、フロートバス内の溶融金属上でガラスリボンに成形し、得られたガラスリボンを徐冷して板ガラスを得る、フロートガラスの製造方法であって、
 前記フロートバス内の雰囲気に露出している溶融金属露出部に対し、プラズマガスを噴射することを特徴とするフロートガラスの製造方法。
A method of producing float glass, comprising forming molten glass obtained by melting a glass raw material into a glass ribbon on molten metal in a float bath, and gradually cooling the obtained glass ribbon to obtain a sheet glass,
A method of manufacturing float glass, comprising: injecting a plasma gas to a molten metal exposed portion exposed to an atmosphere in the float bath.
 前記溶融金属露出部の幅方向距離をW(mm)とするとき、前記プラズマガスを幅方向距離0.3W以上で前記溶融金属露出部に対して噴射する、請求項1に記載のフロートガラスの製造方法。 2. The float glass according to claim 1, wherein the plasma gas is injected to the molten metal exposed portion at a width direction distance of 0.3 W or more, where W (mm) is the width direction distance of the molten metal exposed portion. Production method.  前記プラズマガスを流れ方向距離10~400mmで前記溶融金属露出部に対して噴射する、請求項1または2に記載のフロートガラスの製造方法。 The method for producing float glass according to claim 1 or 2, wherein the plasma gas is jetted to the molten metal exposed portion at a flow direction distance of 10 to 400 mm.  前記プラズマガスを、前記溶融金属露出部から上方に鉛直方向距離を5~30mm離間させて前記溶融金属露出部に対して噴射する、請求項1~3のいずれか1項に記載のフロートガラスの製造方法。 The float glass according to any one of claims 1 to 3, wherein the plasma gas is injected to the molten metal exposed portion at a distance of 5 to 30 mm in a vertical direction upward from the molten metal exposed portion. Production method.  前記プラズマガスが、He,Ne,Ar,N2,CO,CO2,H2,H2O,NH3,CH4,C22,C24およびC26からなる群から選択される少なくとも一種を含有する、請求項1~4のいずれか1項に記載のフロートガラスの製造方法。 The plasma gas, He, Ne, Ar, N 2, CO, CO 2, H 2, H 2 O, from the group consisting of NH 3, CH 4, C 2 H 2, C 2 H 4 and C 2 H 6 The method for producing a float glass according to any one of claims 1 to 4, which contains at least one selected.  前記プラズマガスが噴射され、前記溶融金属露出部に到達するまでの雰囲気における水素ラジカル密度が1×1011/cm3以上である、請求項5に記載のフロートガラスの製造方法。 The method for producing float glass according to claim 5, wherein the hydrogen radical density in the atmosphere until the plasma gas is jetted and reaches the molten metal exposed portion is 1 × 10 11 / cm 3 or more.  前記プラズマガスを線速0.1~200m/sで前記溶融金属露出部に対して噴射する、請求項5または6に記載のフロートガラスの製造方法。 The method for producing float glass according to claim 5 or 6, wherein the plasma gas is injected onto the molten metal exposed portion at a linear velocity of 0.1 to 200 m / s.  前記プラズマガスは、前記溶融金属露出部の上方に対向して設けられたプラズマ噴射装置から噴射され、
 前記プラズマ噴射装置は、前記プラズマガスを噴射するプラズマガス噴射部を備え、
 前記プラズマガス噴射部は、複数のプラズマ発生装置を含み、
 前記プラズマ発生装置に導入したガスをプラズマ化するプラズマ化領域における前記プラズマガスの電子密度が1×1013/cm3以上である、請求項1~7のいずれか1項に記載のフロートガラスの製造方法。
The plasma gas is injected from a plasma injection device provided opposite to the upper side of the molten metal exposed portion,
The plasma injection apparatus includes a plasma gas injection unit that injects the plasma gas.
The plasma gas injection unit includes a plurality of plasma generators.
The float glass according to any one of claims 1 to 7, wherein an electron density of the plasma gas in a plasma formation region for plasmatizing a gas introduced into the plasma generator is 1 × 10 13 / cm 3 or more. Production method.
 前記溶融金属露出部において、プラズマガス噴射後の前記溶融金属の酸素ポテンシャルは、プラズマガス噴射前の前記溶融金属の酸素ポテンシャルの1/2以下である、請求項1~8のいずれか1項に記載のフロートガラスの製造方法。 9. The molten metal exposed portion according to any one of claims 1 to 8, wherein the oxygen potential of the molten metal after the plasma gas injection is not more than half the oxygen potential of the molten metal before the plasma gas injection. The manufacturing method of the float glass as described.  前記プラズマガスが噴射される前記溶融金属の温度が900℃以下である、請求項1~9のいずれか1項に記載のフロートガラスの製造方法。 The method for producing float glass according to any one of claims 1 to 9, wherein the temperature of the molten metal to which the plasma gas is injected is 900 属 C or less.  ガラス原料を溶解して得た溶融ガラスを、フロートバス内の溶融金属上でガラスリボンに成形し、得られたガラスリボンを徐冷して板ガラスを得る、フロートガラスの製造装置であって、
 前記フロートバス内の雰囲気に露出している溶融金属露出部の上方には、プラズマ噴射装置が配置され、
 前記プラズマ噴射装置は、プラズマガス噴射部と、該プラズマガス噴射部を支持する支持部とを備え、
 前記プラズマガス噴射部は、前記溶融金属露出部に対し、プラズマガスを噴射することを特徴とするフロートガラスの製造装置。
A float glass manufacturing apparatus, wherein molten glass obtained by melting a glass material is formed into a glass ribbon on molten metal in a float bath, and the obtained glass ribbon is gradually cooled to obtain a sheet glass,
A plasma injection device is disposed above the molten metal exposed portion exposed to the atmosphere in the float bath,
The plasma injection apparatus includes a plasma gas injection unit, and a support unit that supports the plasma gas injection unit.
The apparatus for manufacturing float glass, wherein the plasma gas injection unit injects plasma gas to the molten metal exposed portion.
 前記プラズマガス噴射部は、複数のプラズマ発生装置を含み、
 前記プラズマ発生装置は、該プラズマ発生装置の長手方向と、前記ガラスリボンの流れ方向とが一致するように配置される、請求項11に記載のフロートガラスの製造装置。
The plasma gas injection unit includes a plurality of plasma generators.
The apparatus for manufacturing float glass according to claim 11, wherein the plasma generating apparatus is arranged such that a longitudinal direction of the plasma generating apparatus and a flow direction of the glass ribbon coincide with each other.
 前記プラズマ発生装置のガス排出部の断面形状が矩形である、請求項12に記載のフロートガラスの製造装置。 The float glass manufacturing apparatus according to claim 12, wherein the cross-sectional shape of the gas discharge part of the plasma generator is rectangular.
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