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WO2019091127A1 - Dual-contact memory connector - Google Patents

Dual-contact memory connector Download PDF

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Publication number
WO2019091127A1
WO2019091127A1 PCT/CN2018/093387 CN2018093387W WO2019091127A1 WO 2019091127 A1 WO2019091127 A1 WO 2019091127A1 CN 2018093387 W CN2018093387 W CN 2018093387W WO 2019091127 A1 WO2019091127 A1 WO 2019091127A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact
reed
memory
insulating base
slot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/093387
Other languages
French (fr)
Chinese (zh)
Inventor
陈礼平
王峰
颜波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of WO2019091127A1 publication Critical patent/WO2019091127A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/62Means for facilitating engagement or disengagement of coupling parts or for holding them in engagement
    • H01R13/627Snap or like fastening
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70Coupling devices
    • H01R12/71Coupling devices for rigid printing circuits or like structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/22Contacts for co-operating by abutting
    • H01R13/24Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means

Definitions

  • the present application relates to the field of communications, and in particular, to a dual-contact memory connector.
  • the memory connector is generally in the form of dual inline memory modules (DIMMs), and the connection between the memory module 101 and the DIMM slot. As shown in FIG. 1, the gold finger 102 on the memory stick 101 is electrically connected to the contact spring 103 of the DIMM slot.
  • DIMMs dual inline memory modules
  • the memory module is cleaned by the automatic equipment to clean the dust and dirt of the memory before assembly, and then the dust-free control of the various processes in the production environment, and finally assembled to the SMT reflow soldering or wave plug-in soldering of the upper part, and through the double column In the DIMM slot on the printed circuit board (PCB) empty board of the dual inline-pin (DIP) plug-in, two installations are used to solve the contact failure.
  • PCB printed circuit board
  • DIP dual inline-pin
  • the installer may easily miss some DIMM slots, and there is dust 104 or dirt 104 between the DIMM slots and the memory module, as shown in FIG.
  • the display still causes poor contact between the memory module and the DIMM slot.
  • the DIMM slot is 0.62% due to poor contact ratio, which is the highest ratio of production failure. The production cost is high.
  • the embodiment of the present application provides a dual-contact memory connector for enhancing connectivity between a DIMM reed and a memory stick, reducing the probability of contact failure between the DIMM slot and the memory module, and improving production efficiency. Reduce equipment production costs.
  • a first aspect of the present application provides a dual-contact memory connector including: an insulating base 301, a buckle 302, a contact spring assembly 303, and a fixing assembly 304;
  • the insulating base 301 has a slot 305, The slot 305 is for inserting the memory strip;
  • the buckle 302 is located at two ends of the insulating base 301, the buckle 302 is located at an upper portion of the insulating base 301, and the opening of the slot 305 is located at the insulation
  • the upper portion of the base 301, the buckle 302 and the slot 305 cooperate to fix the memory strip on the insulating base 301;
  • the contact spring assembly 303 includes a plurality of pairs of contact spring structures 306, Each of the contact spring structures 306 has two contact points, the contact spring assembly 303 is located within the slot 305, and the contact spring structure 306 passes through the two contact points with the memory module
  • the fixing component 304 is located at the bottom of the insulating base 301, and
  • the contact reed structure 306 includes a first reed 3061 and a second reed 3062, the second reed 3062 is located below the first reed 3061, and the distance from the second reed 3062 to the bottom of the slot 305 is smaller than the distance from the first reed 3061 to the bottom of the slot 305;
  • the end of the reed 3061 is in anti-contact with the memory strip, the end of the first reed 3061 is a first contact point; the end of the second reed 3062 is in anti-contact with the memory strip, the The end of the two-reed 3062 is a second contact point.
  • the method includes: a soldering pin 307 for electrically connecting to the printed circuit board.
  • the contact area of the first contact point and the memory module is a circular convex head
  • the contact area with the memory strip is a circular convex head
  • the first reed 3061 is a three-folded contact reed, the memory strip and the The holding force between the first reeds 3061 reaches a first preset value;
  • the second reed 3062 is a four-folded contact reed, between the memory strip and the second reed 3062 The holding force reaches the first preset value.
  • the width of the contact reed structure 306 is adapted to the length of the gold finger of the memory module.
  • the thickness of the contact reed structure 306 is adapted to the width of the gold finger of the memory module.
  • the slot 305 is disposed at an upper portion of the insulating base 301, and the insulating base 301 has a concave structure.
  • each pair of the contact spring structures 306 are disposed on two sides of the slot 305 and parallel to the A cross section of the insulating base 301.
  • the number of the first reeds 3061 is the same as the number of gold fingers of the memory module, and the second spring The number of slices 3062 is the same as the number of gold fingers of the memory stick.
  • the number of the soldering pins 307 is the same as the number of gold fingers of the memory module.
  • the soldering pin 307 is a metal dome.
  • the embodiments of the present application have the following advantages:
  • the memory module is fixed on the insulating base 301;
  • the contact spring assembly 303 includes a plurality of pairs of contact spring structures 306, each of the contact spring structures 306 having two contact points, the contact springs
  • the component 303 is located in the slot 305, and the contact spring structure 306 is connected to the gold finger of the memory module through the two contact points;
  • the fixing component 304 is located at the bottom of the insulating base 301,
  • the fixing assembly 304 is for fixing the insulating base 301 and the printed circuit board.
  • the two contact points of the contact reed structure are connected with the gold finger of the memory bar to achieve double point contact, when there is dander or dirt between one of the contact points and the gold finger of the memory stick, There is another contact point to ensure electrical connection between the contact reed structure and the memory module, reducing the probability of poor contact, increasing production efficiency, and reducing equipment production costs.
  • FIG. 1 is a schematic structural view of a memory connector in the prior art
  • FIG. 2 is a schematic diagram of a scene in which the contact between the memory connector and the memory is poor in the prior art
  • FIG. 3 is a schematic diagram of an embodiment of a dual-contact memory connector in an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional view of a dual-contact memory connector in an embodiment of the present application.
  • FIG. 5 is a cross-sectional view showing the double-contact memory connector inserted into the memory module in the embodiment of the present application
  • FIG. 6 is a schematic structural view of a pair of contact springs of a dual-contact memory connector according to an embodiment of the present application
  • FIG. 7 is a schematic perspective structural view of a two-contact memory connector in an embodiment of the present application.
  • FIG. 8 is a partially enlarged schematic view showing the memory module in contact with the contact spring structure in the embodiment of the present application.
  • FIG. 9 is a schematic diagram of a scene in which dust is present between the memory module and the contact reed structure in the embodiment of the present application.
  • the embodiment of the present application provides a dual-contact memory connector for enhancing connectivity between a DIMM reed and a memory stick, reducing the probability of contact failure between the DIMM slot and the memory module, and improving production efficiency. Reduce equipment production costs.
  • Embodiments of the present application provide a dual-contact memory connector that is mounted on a printed circuit board by surface mount technology (SMT) reflow soldering or plug-in wave soldering.
  • the dual-contact memory connector is in the form of dual inline memory modules (DIMMs).
  • an embodiment of the dual-contact memory connector in the embodiment of the present application includes:
  • the buckle 302 is located at two ends of the insulating base 301, the buckle 302 is located at an upper portion of the insulating base 301, and the opening of the slot 305 is located at an upper portion of the insulating base 301, and the buckle 302 Cooperating with the slot 305 for fixing the memory module on the insulating base 301;
  • the contact reed assembly 303 includes a plurality of pairs of contact reed structures 306, each of which has two contact points, the contact reed assembly 303 being located within the slot 305, the contact spring
  • the sheet structure 306 is connected to the gold finger of the memory module through the two contact points;
  • the fixing component 304 is located at the bottom of the insulating base 301, and the fixing component 304 is used for fixing the insulating base 301 and the printed circuit board.
  • the number of the fixing components 304 can be set according to actual conditions.
  • a fixing component is respectively disposed at two ends and an intermediate portion of the insulating base 301, and a total of three fixing components 304 are used for fixing the memory.
  • the connector and the printed circuit board can also be provided with other numbers of fixing components 304 as needed, which are not limited herein.
  • the fixing component 304 can include various structural forms, such as a snap-on type, a welded type, and the like, as long as the function of the fixing component 304 can be implemented, which is not limited herein.
  • the contact reed assembly 303 is composed of a plurality of pairs of contact reed structures 306, each pair of contact reed structures 306 are disposed on both sides of the slot 305, and the two sides of the slot 305 have two contact points.
  • the two second contact points on the side are at the same level, and the level of the second contact point is lower than the level of the first contact point.
  • the memory module is inserted into the insulating base 301 of the dual-contact memory connector through the slot 305, and is fixed in the slot 305 through the buckle 302 located at both ends of the insulating base 301.
  • a gold finger structure is disposed on both sides of a portion of the memory module insertion slot 305, and a contact spring assembly 303 is disposed in the slot 305 of the dual contact memory connector, and the number of contact reed structures 306 included in the contact reed assembly 303 is provided.
  • each contact spring structure 306 has two contact points, each gold finger is abutted with two contact points of the contact spring structure 306; the fixing component 304 located at the bottom of the insulating base 301 is fixedly inserted.
  • An insulating base 301 having a memory module and a printed circuit board.
  • the two contact points of the contact reed structure are connected with the gold finger of the memory bar to realize double-point contact, and when there is dust or dirt between one of the contact points and the gold finger of the memory stick, Another contact point ensures electrical connection between the contact reed structure and the memory module, reducing the probability of poor contact, increasing production efficiency, and reducing equipment production costs.
  • another embodiment of the dual-contact memory connector in the embodiment of the present application includes:
  • the buckle 302 is located at two ends of the insulating base 301, the buckle 302 is located at an upper portion of the insulating base 301, and the opening of the slot 305 is located at an upper portion of the insulating base 301, and the buckle 302 Cooperating with the slot 305 for fixing the memory module on the insulating base 301;
  • the contact reed assembly 303 includes a plurality of pairs of contact reed structures 306, each of which has two contact points, the contact reed assembly 303 being located within the slot 305, the contact spring
  • the sheet structure 306 is connected to the gold finger of the memory module through the two contact points;
  • the fixing component 304 is located at the bottom of the insulating base 301, and the fixing component 304 is used for fixing the insulating base 301 and the printed circuit board.
  • the contact reed structure 306 includes a first reed 3061 and a second reed 3062, and the second reed 3062 is located below the first reed 3061.
  • the distance from the second reed 3062 to the bottom of the slot 305 is smaller than the distance from the first reed 3061 to the bottom of the slot 305;
  • the end of the first reed 3061 is in anti-contact with the memory strip, and the end of the first reed 3061 is a first contact point;
  • the end of the second reed 3062 is in abutting contact with the memory strip, and the end of the second reed 3062 is a second contact point.
  • the shapes of the first contact point and the second contact point may be set according to actual conditions, and the contact area is increased as much as possible without affecting the insertion and removal of the memory module and the dual-contact memory connector. Reduce the probability of contact failure.
  • the first contact point and the second contact point may be configured as a circular convex head structure.
  • the diameter of the circular convex head structure is 0.5 mm, and may be set to other values that meet the requirements, which is not limited herein.
  • the dual-contact memory connector further includes:
  • Solder pins 307 for electrically connecting to the printed circuit board.
  • each of the contact reed structures 306 includes a first reed 3061 and a second reed 3062.
  • each contact reed structure 306 corresponds to two solder pins 307.
  • the contact reed assembly 303 may include two sets of contact reed structures 306, and each set of contact reed structures 306 is correspondingly provided with two sets of soldering pins 307, each of which The set of solder pins 307 includes the same number of solder pins 307 as each set of contact reed structures 306.
  • the first reed 3061 is coupled to the first set of solder pins.
  • the second reed 3062 is coupled to the second set of solder pins.
  • each contact reed structure 306 can be simultaneously connected to the same soldering pin 307, that is, the contact reed assembly 303 can include two The set of contact reed structures 306, each set of contact reed structures 306 is correspondingly provided with a set of soldering pins 307, and other settings may be made according to actual conditions, which are not limited herein.
  • FIG. 5 is a schematic cross-sectional view of the dual-contact memory connector, and the memory strip is in contact with the contact point of the contact spring structure. specific:
  • the contact reed structure 306 includes a first reed 3061 and a second reed 3062, the second reed 3062 being located below the first reed 3061, the second reed 3062 to the slot
  • the distance from the bottom of the 305 is smaller than the distance from the first reed 3061 to the bottom of the slot 305;
  • the end of the first reed 3061 is in anti-contact with the memory strip, and the end of the first reed 3061 is a first contact point;
  • the end of the second reed 3062 is in abutting contact with the memory strip, and the end of the second reed 3062 is a second contact point.
  • the first reed 3061 is a three-folded contact reed, and the holding force between the memory strip and the first reed 3061 Reaching the first preset value;
  • the second reed 3062 is a contact spring that has been bent four times, and the holding force between the memory strip and the second reed 3062 reaches the first preset value.
  • the memory module has different specifications for memory modules produced by different manufacturers. For example, there are specifications such as DDR, DDR2, and DDR3.
  • the specifications of the memory connector are compatible with the inserted memory module, and different types of memory.
  • the corresponding memory connector has different specifications.
  • the DIMM structure has 184Pin, that is, the gold finger of the memory stick has 92Pin on each side, and the number of contact reed structures in each group is also 92.
  • DDR2DIMM or DDR3DIMM the DIMM structure has 240pin, the gold finger of the memory stick has 120Pin on each side, and the number of contact reed structures in each group is also 120.
  • the number of the first reeds 3061 is the same as the number of gold fingers of the memory stick, the number of the second reeds 3062 and the number of gold fingers of the memory stick. the same.
  • each of the contact reed structures 306 includes two reeds and corresponds to a solder pin 307.
  • the number of the solder pins 307 is the same as the number of gold fingers of the memory module.
  • the soldering pin 307 is a metal dome.
  • soldering pin 307 may also be in other shapes, which is not limited herein.
  • the slot 305 is disposed at an upper portion of the insulating base 301 such that the insulating base 301 has a concave structure.
  • each pair of the contact spring structures 306 are disposed on both sides of the slot 305 and parallel to the cross section of the insulating base 301.
  • FIG. 8 is a partially enlarged schematic view of the memory strip 101 in contact with the contact reed structure 306.
  • the width of the contact reed structure 306 is The length of the gold finger of the memory stick is adapted.
  • the width of the contact spring structure 306 is adapted to the length of the gold finger 102 of the memory module 101.
  • the width of the first reed 3061 and the second reed 3062 in the contact reed structure 306 may be set to 0.6 mm. Other values can be set according to the actual situation. This is not limited here.
  • the thickness of the contact spring structure 306 is adapted to the width of the gold finger 102 of the memory module 101.
  • the thickness of the contact spring structure 306 can be set to 0.3 mm, that is, the first reed 3061 and the second spring.
  • the thickness of the sheet 3062 is set to 0.6 mm, and other values can be set according to actual conditions. This is not limited here.
  • the length of the first reed 3061 can be set to 110 mm, and other values can be set according to actual conditions. This is not limited here.
  • the length of the second reed 3062 can be set to 65 mm, and other values can be set according to actual conditions. This is not limited here.
  • the memory strips 101 are clamped by the four contact points of each pair of contact spring structures 306, and the gold fingers 102 on each side of the memory module 101.
  • the holding force between the two contact points of a contact reed structure 306 can be set to 100N, and other values can be set according to actual conditions. This is not limited here.
  • the contact between the first reed 3061 and the gold finger 102 is poor, and the contact reed is
  • the structure 306 can realize the electrical connection with the gold finger 102 of the memory module 101 through the second reed 3062, thereby reducing the probability of poor memory contact; due to the simple structure, the requirements on the production environment are low, and the equipment in the production process is reduced. Cost increases production efficiency.

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  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

Disclosed in embodiments of the present application is a dual-contact memory connector, for use in enhancing the connectivity between a DIMM spring and the golden finger of a memory chip, lowering the probability of poor contact between a DIMM slot and the memory chip, improving production efficiency, and reducing device production costs. The connector comprises an insulated base (301), clips (302), a contact spring assembly (303), and a fixing assembly (304). The insulated base (301) is provided with a slot (305) which is used for insertion of a memory chip. The clips (302) are located at the two ends of the insulated base (301). The contact spring assembly (303) comprises a plurality of pairs of contact spring structures (306), each contact spring structure (306) is provided with two contact points, and the contact spring structures (306) are connected to the golden finger of the memory chip by means of the two contact points. The fixing assembly (304) is located at the bottom of the insulated base (301).

Description

一种双触点内存连接器Double contact memory connector

本申请要求2017年11月10日提交中国专利局、申请号为201711106195.8、发明名称为“一种内存连接器”的中国专利申请的优先权,以及要求2017年12月12日提交中国专利局、申请号为201711320570.9、发明名称为“一种双触点内存连接器”的中国专利申请的优先权,其全部内容通过引用结合在本申请文件中。This application claims the priority of a Chinese patent application submitted to the China Patent Office on November 10, 2017, with the application number of 201711106195.8, the invention name is "a memory connector", and the request to the Chinese Patent Office on December 12, 2017. Priority is claimed on Japanese Patent Application No. No. No. No. No. No. No. No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No

技术领域Technical field

本申请涉及通信领域,尤其涉及一种双触点内存连接器。The present application relates to the field of communications, and in particular, to a dual-contact memory connector.

背景技术Background technique

随着计算机的广泛应用,人们对计算机的性能要求也越来越高,计算机内的内存需求也越来越高,对于安装内存条的内存连接器的要求也越来越高。大多数内存连接器采用插入式波峰焊接技术实现与计算机的主板连接,内存连接器一般采用双列直插式存储模块(dual inline memory modules,DIMM)形式,内存条101与DIMM插槽的连接关系,如图1所示,内存条101上的金手指102与DIMM插槽的接触簧片103电气连接。With the wide application of computers, people's performance requirements for computers are getting higher and higher, the memory requirements in computers are getting higher and higher, and the requirements for memory connectors for installing memory modules are getting higher and higher. Most memory connectors use plug-in wave soldering technology to connect to the motherboard of the computer. The memory connector is generally in the form of dual inline memory modules (DIMMs), and the connection between the memory module 101 and the DIMM slot. As shown in FIG. 1, the gold finger 102 on the memory stick 101 is electrically connected to the contact spring 103 of the DIMM slot.

目前,内存条在组装前先采用自动化设备对内存灰尘与脏污做清洁,再对生产环境各个工序做无尘管制,最后在组装到经过SMT回流焊接或波峰插件焊接上件,并经过双列直插式(dual inline-pin,DIP)插件的印制电路板(printed circuit board,PCB)空板上的DIMM插槽时,采用两次安装来解决接触不良现象。At present, the memory module is cleaned by the automatic equipment to clean the dust and dirt of the memory before assembly, and then the dust-free control of the various processes in the production environment, and finally assembled to the SMT reflow soldering or wave plug-in soldering of the upper part, and through the double column In the DIMM slot on the printed circuit board (PCB) empty board of the dual inline-pin (DIP) plug-in, two installations are used to solve the contact failure.

当DIMM插槽数量很多,采用现有的两次安装的方法进行生产组装时,安装人员容易遗漏部分DIMM插槽,DIMM插槽与内存条之间有灰尘104或脏污104,如图2所示,仍然会导致内存条与DIMM插槽的接触不良,DIMM插槽因接触不良占总不良比例最高时为0.62%,生产效率低,生产设备的成本高。When the number of DIMM slots is large, when the existing two-installation method is used for production assembly, the installer may easily miss some DIMM slots, and there is dust 104 or dirt 104 between the DIMM slots and the memory module, as shown in FIG. The display still causes poor contact between the memory module and the DIMM slot. The DIMM slot is 0.62% due to poor contact ratio, which is the highest ratio of production failure. The production cost is high.

发明内容Summary of the invention

本申请实施例提供了一种双触点内存连接器,用于增强DIMM簧片与内存条金手指之间的连通性,降低DIMM插槽和内存条之间发生接触不良的概率,提高生产效率,降低设备生产成本。The embodiment of the present application provides a dual-contact memory connector for enhancing connectivity between a DIMM reed and a memory stick, reducing the probability of contact failure between the DIMM slot and the memory module, and improving production efficiency. Reduce equipment production costs.

本申请实施例的第一方面提供一种双触点内存连接器,包括:绝缘底座301、卡扣302、接触簧片组件303和固定组件304;所述绝缘底座301具有插槽305,所述插槽305用于插接内存条;所述卡扣302位于所述绝缘底座301的两端,所述卡扣302位于所述绝缘底座301的上部,所述插槽305的开口位于所述绝缘底座301的上部,所述卡扣302与所述插槽305相互配合,用于在所述绝缘底座301上固定所述内存条;所述接触簧片组件303包含多对接触簧片结构306,每个所述接触簧片结构306具有两个接触点,所述接触簧片组件303位于所述插槽305内,所述接触簧片结构306通过所述两个接触点与所述内存条的金手指连接;所述固定组件304位于所述绝缘底座301的底部,所述固定组件304用于固定所述绝缘底座301和印制电路板。A first aspect of the present application provides a dual-contact memory connector including: an insulating base 301, a buckle 302, a contact spring assembly 303, and a fixing assembly 304; the insulating base 301 has a slot 305, The slot 305 is for inserting the memory strip; the buckle 302 is located at two ends of the insulating base 301, the buckle 302 is located at an upper portion of the insulating base 301, and the opening of the slot 305 is located at the insulation The upper portion of the base 301, the buckle 302 and the slot 305 cooperate to fix the memory strip on the insulating base 301; the contact spring assembly 303 includes a plurality of pairs of contact spring structures 306, Each of the contact spring structures 306 has two contact points, the contact spring assembly 303 is located within the slot 305, and the contact spring structure 306 passes through the two contact points with the memory module The gold finger connection; the fixing component 304 is located at the bottom of the insulating base 301, and the fixing component 304 is used for fixing the insulating base 301 and the printed circuit board.

在一种可能的设计中,在本申请实施例第一方面的第一种实现方式中,所述接触簧片结构306包括第一簧片3061和第二簧片3062,所述第二簧片3062位于所述第一簧片3061的下方,所述第二簧片3062到所述插槽305底部的距离小于所述第一簧片3061到所述插槽305底部的距离;所述第一簧片3061的末端与所述内存条抵持接触,所述第一簧片3061的末端为第一接触点;所述第二簧片3062的末端与所述内存条抵持接触,所述第二簧片3062的末端为第二接触点。In a possible design, in a first implementation of the first aspect of the embodiments of the present application, the contact reed structure 306 includes a first reed 3061 and a second reed 3062, the second reed 3062 is located below the first reed 3061, and the distance from the second reed 3062 to the bottom of the slot 305 is smaller than the distance from the first reed 3061 to the bottom of the slot 305; The end of the reed 3061 is in anti-contact with the memory strip, the end of the first reed 3061 is a first contact point; the end of the second reed 3062 is in anti-contact with the memory strip, the The end of the two-reed 3062 is a second contact point.

在一种可能的设计中,在本申请实施例第一方面的第二种实现方式中,包括:焊接引脚307,所述焊接引脚307用于与所述印制电路板电气连接。In a possible design, in a second implementation manner of the first aspect of the embodiment of the present application, the method includes: a soldering pin 307 for electrically connecting to the printed circuit board.

在一种可能的设计中,在本申请实施例第一方面的第三种实现方式中,所述第一接触点与所述内存条的接触区域为圆形凸包头,所述第二接触点与所述内存条的接触区域为圆形凸包头。In a possible design, in a third implementation manner of the first aspect of the embodiment, the contact area of the first contact point and the memory module is a circular convex head, and the second contact point The contact area with the memory strip is a circular convex head.

在一种可能的设计中,在本申请实施例第一方面的第四种实现方式中,包括:所述第一簧片3061为经过三次弯折的接触簧片,所述内存条与所述第一簧片3061之间的加持力达到第一预设值;所述第二簧片3062为经过四次弯折的接触簧片,所述内存条与所述第二簧片3062之间的加持力达到所述第一预设值。In a possible design, in a fourth implementation manner of the first aspect of the embodiments of the present application, the first reed 3061 is a three-folded contact reed, the memory strip and the The holding force between the first reeds 3061 reaches a first preset value; the second reed 3062 is a four-folded contact reed, between the memory strip and the second reed 3062 The holding force reaches the first preset value.

在一种可能的设计中,在本申请实施例第一方面的第五种实现方式中,所述接触簧片结构306的宽度与所述内存条的金手指的长度相适应。In a possible design, in a fifth implementation manner of the first aspect of the embodiments of the present application, the width of the contact reed structure 306 is adapted to the length of the gold finger of the memory module.

在一种可能的设计中,在本申请实施例第一方面的第六种实现方式中,包括:所述接触簧片结构306的厚度与所述内存条的金手指的宽度相适应。In a possible design, in a sixth implementation manner of the first aspect of the embodiment of the present application, the thickness of the contact reed structure 306 is adapted to the width of the gold finger of the memory module.

在一种可能的设计中,在本申请实施例第一方面的第七种实现方式中,所述插槽305设置在所述绝缘底座301的上部,所述绝缘底座301为凹形结构。In a possible design, in a seventh implementation manner of the first aspect of the embodiment of the present application, the slot 305 is disposed at an upper portion of the insulating base 301, and the insulating base 301 has a concave structure.

在一种可能的设计中,在本申请实施例第一方面的第八种实现方式中,每一对所述接触簧片结构306设置在所述插槽305的两侧,并平行于所述绝缘底座301的横截面。In a possible design, in an eighth implementation manner of the first aspect of the embodiments of the present application, each pair of the contact spring structures 306 are disposed on two sides of the slot 305 and parallel to the A cross section of the insulating base 301.

在一种可能的设计中,在本申请实施例第一方面的第九种实现方式中,所述第一簧片3061的数量与所述内存条的金手指的数量相同,所述第二簧片3062的数量与所述内存条的金手指的数量相同。In a possible design, in a ninth implementation manner of the first aspect of the embodiments of the present application, the number of the first reeds 3061 is the same as the number of gold fingers of the memory module, and the second spring The number of slices 3062 is the same as the number of gold fingers of the memory stick.

在一种可能的设计中,在本申请实施例第一方面的第十种实现方式中,所述焊接引脚307的数量与所述内存条的金手指的数量相同。In a possible design, in the tenth implementation manner of the first aspect of the embodiment of the present application, the number of the soldering pins 307 is the same as the number of gold fingers of the memory module.

在一种可能的设计中,在本申请实施例第一方面的第十一种实现方式中,所述焊接引脚307为金属弹片。In a possible design, in an eleventh implementation manner of the first aspect of the embodiment of the present application, the soldering pin 307 is a metal dome.

从以上技术方案可以看出,本申请实施例具有以下优点:As can be seen from the above technical solutions, the embodiments of the present application have the following advantages:

绝缘底座301、卡扣302、接触簧片组件303和固定组件304;所述绝缘底座301具有插槽305,所述插槽305用于插接内存条;所述卡扣302位于所述绝缘底座301的两端,所述卡扣302位于所述绝缘底座301的上部,所述插槽305的开口位于所述绝缘底座301的上部,所述卡扣302与所述插槽305相互配合,用于在所述绝缘底座301上固定所述内存条;所述接触簧片组件303包含多对接触簧片结构306,每个所述接触簧片结构306具有两个接触点,所述接触簧片组件303位于所述插槽305内,所述接触簧片结构306通过 所述两个接触点与所述内存条的金手指连接;所述固定组件304位于所述绝缘底座301的底部,所述固定组件304用于固定所述绝缘底座301和印制电路板。本申请实施例中,通过接触簧片结构的两个接触点与内存条的金手指连接,实现双点接触,当其中一个接触点与内存条的金手指之间有毛屑或脏污时,有另一个接触点确保接触簧片结构与内存条之间的电气连接,降低发生接触不良的概率,提高生产效率,降低设备生产成本。An insulating base 301, a buckle 302, a contact spring assembly 303 and a fixing assembly 304; the insulating base 301 has a slot 305 for inserting a memory module; the buckle 302 is located at the insulating base The buckle 302 is located at an upper portion of the insulating base 301, the opening of the slot 305 is located at an upper portion of the insulating base 301, and the buckle 302 and the slot 305 cooperate with each other. The memory module is fixed on the insulating base 301; the contact spring assembly 303 includes a plurality of pairs of contact spring structures 306, each of the contact spring structures 306 having two contact points, the contact springs The component 303 is located in the slot 305, and the contact spring structure 306 is connected to the gold finger of the memory module through the two contact points; the fixing component 304 is located at the bottom of the insulating base 301, The fixing assembly 304 is for fixing the insulating base 301 and the printed circuit board. In the embodiment of the present application, the two contact points of the contact reed structure are connected with the gold finger of the memory bar to achieve double point contact, when there is dander or dirt between one of the contact points and the gold finger of the memory stick, There is another contact point to ensure electrical connection between the contact reed structure and the memory module, reducing the probability of poor contact, increasing production efficiency, and reducing equipment production costs.

附图说明DRAWINGS

图1为现有技术中内存连接器的一个结构示意图;1 is a schematic structural view of a memory connector in the prior art;

图2为现有技术中中内存连接器与内存之间接触不良的一个场景示意图;2 is a schematic diagram of a scene in which the contact between the memory connector and the memory is poor in the prior art;

图3为本申请实施例中双触点内存连接器的一个实施例示意图;3 is a schematic diagram of an embodiment of a dual-contact memory connector in an embodiment of the present application;

图4为本申请实施例中双触点内存连接器的横截面示意图;4 is a schematic cross-sectional view of a dual-contact memory connector in an embodiment of the present application;

图5为本申请实施例中双触点内存连接器插上内存条时的横截面示意图;5 is a cross-sectional view showing the double-contact memory connector inserted into the memory module in the embodiment of the present application;

图6为本申请实施例中双触点内存连接器的一对接触簧片的结构示意图;6 is a schematic structural view of a pair of contact springs of a dual-contact memory connector according to an embodiment of the present application;

图7为本申请实施例中双触点内存连接器的一个立体结构示意图;7 is a schematic perspective structural view of a two-contact memory connector in an embodiment of the present application;

图8为本申请实施例中内存条与接触簧片结构接触时的局部放大示意图;FIG. 8 is a partially enlarged schematic view showing the memory module in contact with the contact spring structure in the embodiment of the present application; FIG.

图9为本申请实施例中内存条与接触簧片结构之间有灰尘的一个场景示意图。FIG. 9 is a schematic diagram of a scene in which dust is present between the memory module and the contact reed structure in the embodiment of the present application.

具体实施方式Detailed ways

本申请实施例提供了一种双触点内存连接器,用于增强DIMM簧片与内存条金手指之间的连通性,降低DIMM插槽和内存条之间发生接触不良的概率,提高生产效率,降低设备生产成本。The embodiment of the present application provides a dual-contact memory connector for enhancing connectivity between a DIMM reed and a memory stick, reducing the probability of contact failure between the DIMM slot and the memory module, and improving production efficiency. Reduce equipment production costs.

为了使本技术领域的人员更好地理解本申请方案,下面将结合本申请实施例中的附图,对本申请实施例进行描述。The embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.

本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”、“第三”、“第四”等(如果存在)是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的实施例能够以除了在这里图示或描述的内容以外的顺序实施。此外,术语“包括”或“具有”及其任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second", "third", "fourth", etc. (if present) in the specification and claims of the present application and the above figures are used to distinguish similar objects without having to use To describe a specific order or order. It is to be understood that the data so used may be interchanged where appropriate so that the embodiments described herein can be implemented in a sequence other than what is illustrated or described herein. In addition, the term "comprises" or "comprises" or any variations thereof, is intended to cover a non-exclusive inclusion, for example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to those that are clearly listed Steps or units, but may include other steps or units not explicitly listed or inherent to such processes, methods, products or devices.

本申请实施例提供了一种双触点内存连接器,双触点内存连接器通过表面贴装技术(surface mount technology,SMT)回流焊接或插入式波峰焊接在在印制电路板上。双触点内存连接器采用双列直插式存储模块(dual inline memory modules,DIMM)形式。Embodiments of the present application provide a dual-contact memory connector that is mounted on a printed circuit board by surface mount technology (SMT) reflow soldering or plug-in wave soldering. The dual-contact memory connector is in the form of dual inline memory modules (DIMMs).

请参阅图3,本申请实施例中双触点内存连接器的一个实施例包括:Referring to FIG. 3, an embodiment of the dual-contact memory connector in the embodiment of the present application includes:

绝缘底座301、卡扣302、接触簧片组件303和固定组件304;所述绝缘底座301具有插槽305,所述插槽305用于插接内存条;An insulating base 301, a buckle 302, a contact spring assembly 303 and a fixing assembly 304; the insulating base 301 has a slot 305 for inserting a memory module;

所述卡扣302位于所述绝缘底座301的两端,所述卡扣302位于所述绝缘底座301的 上部,所述插槽305的开口位于所述绝缘底座301的上部,所述卡扣302与所述插槽305相互配合,用于在所述绝缘底座301上固定所述内存条;The buckle 302 is located at two ends of the insulating base 301, the buckle 302 is located at an upper portion of the insulating base 301, and the opening of the slot 305 is located at an upper portion of the insulating base 301, and the buckle 302 Cooperating with the slot 305 for fixing the memory module on the insulating base 301;

所述接触簧片组件303包含多对接触簧片结构306,每个所述接触簧片结构306具有两个接触点,所述接触簧片组件303位于所述插槽305内,所述接触簧片结构306通过所述两个接触点与所述内存条的金手指连接;The contact reed assembly 303 includes a plurality of pairs of contact reed structures 306, each of which has two contact points, the contact reed assembly 303 being located within the slot 305, the contact spring The sheet structure 306 is connected to the gold finger of the memory module through the two contact points;

所述固定组件304位于所述绝缘底座301的底部,所述固定组件304用于固定所述绝缘底座301和印制电路板。The fixing component 304 is located at the bottom of the insulating base 301, and the fixing component 304 is used for fixing the insulating base 301 and the printed circuit board.

需要说明的是,固定组件304的数量可以根据实际情况进行设置,例如,图3中,在绝缘底座301的两端和中间部分,分别设置一个固定组件,总共3个固定组件304用于固定内存连接器和印制电路板,还可以根据需要设置其他数量的固定组件304,具体此处不做限定。It should be noted that the number of the fixing components 304 can be set according to actual conditions. For example, in FIG. 3, a fixing component is respectively disposed at two ends and an intermediate portion of the insulating base 301, and a total of three fixing components 304 are used for fixing the memory. The connector and the printed circuit board can also be provided with other numbers of fixing components 304 as needed, which are not limited herein.

可以理解的是,只要能够实现固定组件304的功能,固定组件304可以包括多种结构形式,例如,卡扣式、焊接式等,具体此处不做限定。It can be understood that the fixing component 304 can include various structural forms, such as a snap-on type, a welded type, and the like, as long as the function of the fixing component 304 can be implemented, which is not limited herein.

需要说明的是,接触簧片组件303由多对接触簧片结构306组成,每一对接触簧片结构306设置在插槽305的两侧,插槽305的两侧都具有两个接触点,第一接触点和第二接触点;为了使内存条受力均匀,对于一对接触簧片结构306而言,插槽305两侧的两个第一接触点位于同一水平高度,插槽305两侧的两个第二接触点位于同一水平高度,第二接触点的水平高度低于第一接触点的水平高度。It should be noted that the contact reed assembly 303 is composed of a plurality of pairs of contact reed structures 306, each pair of contact reed structures 306 are disposed on both sides of the slot 305, and the two sides of the slot 305 have two contact points. The first contact point and the second contact point; in order to make the memory bar uniform, for a pair of contact spring structures 306, the two first contact points on both sides of the slot 305 are at the same level, and the slots 305 are two The two second contact points on the side are at the same level, and the level of the second contact point is lower than the level of the first contact point.

本申请实施例中,内存条通过插槽305插入双触点内存连接器的绝缘底座301中,并通过位于绝缘底座301两端的卡扣302固定在插槽305中。内存条插入插槽305的部分的两侧设置有金手指结构,双触点内存连接器的插槽305中设置有触簧片组件303,接触簧片组件303包含的接触簧片结构306的数量与金手指的数量相同;每个接触簧片结构306具有两个接触点,每一个金手指与接触簧片结构306的两个接触点抵持连接;位于绝缘底座301底部的固定组件304固定插有内存条的绝缘底座301和印制电路板。本申请实施例中,通过接触簧片结构的两个接触点与内存条的金手指连接,实现双点接触,当其中一个接触点与内存条的金手指之间有灰尘或脏污时,有另一个接触点确保接触簧片结构与内存条之间的电气连接,降低发生接触不良的概率,提高生产效率,降低设备生产成本。In the embodiment of the present application, the memory module is inserted into the insulating base 301 of the dual-contact memory connector through the slot 305, and is fixed in the slot 305 through the buckle 302 located at both ends of the insulating base 301. A gold finger structure is disposed on both sides of a portion of the memory module insertion slot 305, and a contact spring assembly 303 is disposed in the slot 305 of the dual contact memory connector, and the number of contact reed structures 306 included in the contact reed assembly 303 is provided. The number of gold fingers is the same; each contact spring structure 306 has two contact points, each gold finger is abutted with two contact points of the contact spring structure 306; the fixing component 304 located at the bottom of the insulating base 301 is fixedly inserted. An insulating base 301 having a memory module and a printed circuit board. In the embodiment of the present application, the two contact points of the contact reed structure are connected with the gold finger of the memory bar to realize double-point contact, and when there is dust or dirt between one of the contact points and the gold finger of the memory stick, Another contact point ensures electrical connection between the contact reed structure and the memory module, reducing the probability of poor contact, increasing production efficiency, and reducing equipment production costs.

请参阅图3和图4,本申请实施例中双触点内存连接器的另一个实施例包括:Referring to FIG. 3 and FIG. 4, another embodiment of the dual-contact memory connector in the embodiment of the present application includes:

绝缘底座301、卡扣302、接触簧片组件303和固定组件304;所述绝缘底座301具有插槽305,所述插槽305用于插接内存条;An insulating base 301, a buckle 302, a contact spring assembly 303 and a fixing assembly 304; the insulating base 301 has a slot 305 for inserting a memory module;

所述卡扣302位于所述绝缘底座301的两端,所述卡扣302位于所述绝缘底座301的上部,所述插槽305的开口位于所述绝缘底座301的上部,所述卡扣302与所述插槽305相互配合,用于在所述绝缘底座301上固定所述内存条;The buckle 302 is located at two ends of the insulating base 301, the buckle 302 is located at an upper portion of the insulating base 301, and the opening of the slot 305 is located at an upper portion of the insulating base 301, and the buckle 302 Cooperating with the slot 305 for fixing the memory module on the insulating base 301;

所述接触簧片组件303包含多对接触簧片结构306,每个所述接触簧片结构306具有两个接触点,所述接触簧片组件303位于所述插槽305内,所述接触簧片结构306通过所述两个接触点与所述内存条的金手指连接;The contact reed assembly 303 includes a plurality of pairs of contact reed structures 306, each of which has two contact points, the contact reed assembly 303 being located within the slot 305, the contact spring The sheet structure 306 is connected to the gold finger of the memory module through the two contact points;

所述固定组件304位于所述绝缘底座301的底部,所述固定组件304用于固定所述绝 缘底座301和印制电路板。The fixing component 304 is located at the bottom of the insulating base 301, and the fixing component 304 is used for fixing the insulating base 301 and the printed circuit board.

在一种可行的实施例方式中,所述接触簧片结构306包括第一簧片3061和第二簧片3062,所述第二簧片3062位于所述第一簧片3061的下方,所述第二簧片3062到所述插槽305底部的距离小于所述第一簧片3061到所述插槽305底部的距离;In a possible embodiment, the contact reed structure 306 includes a first reed 3061 and a second reed 3062, and the second reed 3062 is located below the first reed 3061. The distance from the second reed 3062 to the bottom of the slot 305 is smaller than the distance from the first reed 3061 to the bottom of the slot 305;

所述第一簧片3061的末端与所述内存条抵持接触,所述第一簧片3061的末端为第一接触点;The end of the first reed 3061 is in anti-contact with the memory strip, and the end of the first reed 3061 is a first contact point;

所述第二簧片3062的末端与所述内存条抵持接触,所述第二簧片3062的末端为第二接触点。The end of the second reed 3062 is in abutting contact with the memory strip, and the end of the second reed 3062 is a second contact point.

需要说明的是,第一接触点和第二接触点的形状可以根据实际情况进行设置,在不影响内存条与双触点内存连接器的插拔的情况下,尽可能的增大接触面积,降低接触不良的发生概率。例如,可以将第一接触点和第二接触点设置为圆形凸包头结构,圆形凸包头结构的直径为0.5毫米,还可以设置为其他满足要求的数值,具体此处不做限定。It should be noted that the shapes of the first contact point and the second contact point may be set according to actual conditions, and the contact area is increased as much as possible without affecting the insertion and removal of the memory module and the dual-contact memory connector. Reduce the probability of contact failure. For example, the first contact point and the second contact point may be configured as a circular convex head structure. The diameter of the circular convex head structure is 0.5 mm, and may be set to other values that meet the requirements, which is not limited herein.

在一种可行的实施例方式中,双触点内存连接器还包括:In a possible embodiment, the dual-contact memory connector further includes:

焊接引脚307,所述焊接引脚307用于与所述印制电路板电气连接。Solder pins 307 for electrically connecting to the printed circuit board.

需要说明的是,如图4所示,焊接引脚307设置在绝缘底座的下部,焊接引脚307可以根据实际情况设置多组焊接引脚307。例如,每个接触簧片结构306包含一个第一簧片3061和一个第二簧片3062,当第一簧片3061和第二簧片3062分别连接不同的焊接引脚307时,可以设置四个焊接引脚307,每个接触簧片结构306对应两个焊接引脚307。It should be noted that, as shown in FIG. 4, the soldering pin 307 is disposed at a lower portion of the insulating base, and the soldering pin 307 can be provided with a plurality of sets of soldering pins 307 according to actual conditions. For example, each of the contact reed structures 306 includes a first reed 3061 and a second reed 3062. When the first reed 3061 and the second reed 3062 are connected to different solder pins 307, respectively, four Solder pins 307, each contact reed structure 306 corresponds to two solder pins 307.

具体的,如图5所示,当插入内存条101时,接触簧片组件303可以包括两组接触簧片结构306,每组接触簧片结构306对应设置有两组焊接引脚307,每一组焊接引脚307包含的焊接引脚307的数量与每一组接触簧片结构306的数量相同,对于每一个接触簧片结构306而言,第一簧片3061与第一组焊接引脚连接,第二簧片3062与第二组焊接引脚连接。Specifically, as shown in FIG. 5, when the memory module 101 is inserted, the contact reed assembly 303 may include two sets of contact reed structures 306, and each set of contact reed structures 306 is correspondingly provided with two sets of soldering pins 307, each of which The set of solder pins 307 includes the same number of solder pins 307 as each set of contact reed structures 306. For each contact reed structure 306, the first reed 3061 is coupled to the first set of solder pins. The second reed 3062 is coupled to the second set of solder pins.

可以理解的是,如图6所示,对于每一个接触簧片结构306,第一簧片3061和第二簧片3062可以同时连接同一个焊接引脚307,即接触簧片组件303可以包括两组接触簧片结构306,每组接触簧片结构306对应设置有一组焊接引脚307,还可以根据实际情况进行其他设置,具体此处不做限定。It can be understood that, as shown in FIG. 6, for each contact reed structure 306, the first reed 3061 and the second reed 3062 can be simultaneously connected to the same soldering pin 307, that is, the contact reed assembly 303 can include two The set of contact reed structures 306, each set of contact reed structures 306 is correspondingly provided with a set of soldering pins 307, and other settings may be made according to actual conditions, which are not limited herein.

在一种可行的实施例方式中,当插入内存条时,如图5所示,图5为双触点内存连接器的横截面示意图,内存条与接触簧片结构的接触点抵持接触,具体的:In a possible embodiment, when inserting a memory stick, as shown in FIG. 5, FIG. 5 is a schematic cross-sectional view of the dual-contact memory connector, and the memory strip is in contact with the contact point of the contact spring structure. specific:

所述接触簧片结构306包括第一簧片3061和第二簧片3062,所述第二簧片3062位于所述第一簧片3061的下方,所述第二簧片3062到所述插槽305底部的距离小于所述第一簧片3061到所述插槽305底部的距离;The contact reed structure 306 includes a first reed 3061 and a second reed 3062, the second reed 3062 being located below the first reed 3061, the second reed 3062 to the slot The distance from the bottom of the 305 is smaller than the distance from the first reed 3061 to the bottom of the slot 305;

所述第一簧片3061的末端与所述内存条抵持接触,所述第一簧片3061的末端为第一接触点;The end of the first reed 3061 is in anti-contact with the memory strip, and the end of the first reed 3061 is a first contact point;

所述第二簧片3062的末端与所述内存条抵持接触,所述第二簧片3062的末端为第二接触点。The end of the second reed 3062 is in abutting contact with the memory strip, and the end of the second reed 3062 is a second contact point.

在一种可行的实施例方式中,如图6所示,所述第一簧片3061为经过三次弯折的接触 簧片,所述内存条与所述第一簧片3061之间的加持力达到第一预设值;In a possible embodiment, as shown in FIG. 6, the first reed 3061 is a three-folded contact reed, and the holding force between the memory strip and the first reed 3061 Reaching the first preset value;

所述第二簧片3062为经过四次弯折的接触簧片,所述内存条与所述第二簧片3062之间的加持力达到所述第一预设值。The second reed 3062 is a contact spring that has been bent four times, and the holding force between the memory strip and the second reed 3062 reaches the first preset value.

需要说明的是,对于不同厂家生产的内存条,内存条的规格参数也不同,例如,有DDR、DDR2、DDR3等规格,内存连接器的规格参数与插入的内存条相适应,不同类型的内存对应的内存连接器的规格也不同,例如,当为DDR DIMM时,DIMM结构有184Pin,即内存条的金手指每面有92Pin,每组接触簧片结构的数量也为92个。当为DDR2DIMM或DDR3DIMM时,DIMM结构有240pin,内存条的金手指每面有120Pin,每组接触簧片结构的数量也为120个。It should be noted that the memory module has different specifications for memory modules produced by different manufacturers. For example, there are specifications such as DDR, DDR2, and DDR3. The specifications of the memory connector are compatible with the inserted memory module, and different types of memory. The corresponding memory connector has different specifications. For example, when it is a DDR DIMM, the DIMM structure has 184Pin, that is, the gold finger of the memory stick has 92Pin on each side, and the number of contact reed structures in each group is also 92. When it is DDR2DIMM or DDR3DIMM, the DIMM structure has 240pin, the gold finger of the memory stick has 120Pin on each side, and the number of contact reed structures in each group is also 120.

在一种可行的实施例方式中,所述第一簧片3061的数量与所述内存条的金手指的数量相同,所述第二簧片3062的数量与所述内存条的金手指的数量相同。例如,如图7所示,每一个接触簧片结构306包括两个簧片,并对应有焊接引脚307。In a possible embodiment, the number of the first reeds 3061 is the same as the number of gold fingers of the memory stick, the number of the second reeds 3062 and the number of gold fingers of the memory stick. the same. For example, as shown in FIG. 7, each of the contact reed structures 306 includes two reeds and corresponds to a solder pin 307.

在一种可行的实施例方式中,所述焊接引脚307的数量与所述内存条的金手指的数量相同。In a possible embodiment, the number of the solder pins 307 is the same as the number of gold fingers of the memory module.

在一种可行的实施例方式中,所述焊接引脚307为金属弹片。In a possible embodiment, the soldering pin 307 is a metal dome.

需要说明的是,焊接引脚307还可以是其他形状,具体此处不做限定。It should be noted that the soldering pin 307 may also be in other shapes, which is not limited herein.

在一种可行的实施例方式中,如图7所示,所述插槽305设置在所述绝缘底座301的上部,以使得所述绝缘底座301成凹形结构。In a possible embodiment, as shown in FIG. 7, the slot 305 is disposed at an upper portion of the insulating base 301 such that the insulating base 301 has a concave structure.

在一种可行的实施例方式中,如图7所示,每一对所述接触簧片结构306设置在所述插槽305的两侧,并平行于所述绝缘底座301的横截面。In a possible embodiment, as shown in FIG. 7, each pair of the contact spring structures 306 are disposed on both sides of the slot 305 and parallel to the cross section of the insulating base 301.

在一种可行的实施例方式中,结合图7和图8所示,图8为内存条101与接触簧片结构306抵持接触时的局部放大示意图,所述接触簧片结构306的宽度与所述内存条的金手指的长度相适应。In a possible embodiment, as shown in FIG. 7 and FIG. 8, FIG. 8 is a partially enlarged schematic view of the memory strip 101 in contact with the contact reed structure 306. The width of the contact reed structure 306 is The length of the gold finger of the memory stick is adapted.

如图8所示,所述接触簧片结构306的宽度与所述内存条101的金手指102的长度相适应。As shown in FIG. 8, the width of the contact spring structure 306 is adapted to the length of the gold finger 102 of the memory module 101.

需要说明的是,为了确保接触簧片结构306与金手指之间的接触面积满足要求,可以将接触簧片结构306中第一簧片3061和第二簧片3062的宽度设置为0.6毫米,还可以根据实际情况,设置能其他数值。具体此处不做限定。It should be noted that, in order to ensure that the contact area between the contact reed structure 306 and the gold finger meets the requirements, the width of the first reed 3061 and the second reed 3062 in the contact reed structure 306 may be set to 0.6 mm. Other values can be set according to the actual situation. This is not limited here.

如图8所示,所述接触簧片结构306的厚度与所述内存条101的金手指102的宽度相适应。As shown in FIG. 8, the thickness of the contact spring structure 306 is adapted to the width of the gold finger 102 of the memory module 101.

需要说明的是,为了确保排列成行的每个接触簧片结构306之间不互相接触,避免短路,可以将接触簧片结构306的厚度设置为0.3毫米,即将第一簧片3061和第二簧片3062的厚度设置为0.6毫米,还可以根据实际情况,设置能其他数值。具体此处不做限定。It should be noted that, in order to ensure that each contact spring structure 306 arranged in a row does not contact each other and avoid short circuit, the thickness of the contact spring structure 306 can be set to 0.3 mm, that is, the first reed 3061 and the second spring. The thickness of the sheet 3062 is set to 0.6 mm, and other values can be set according to actual conditions. This is not limited here.

在一种可行的实施例方式中,如图6所示,所述第一簧片3061的长度可以设置为110毫米,还可以根据实际情况,设置能其他数值。具体此处不做限定。In a possible embodiment, as shown in FIG. 6, the length of the first reed 3061 can be set to 110 mm, and other values can be set according to actual conditions. This is not limited here.

在一种可行的实施例方式中,如图6所示,所述第二簧片3062的长度可以设置为65毫米,还可以根据实际情况,设置能其他数值。具体此处不做限定。In a possible embodiment, as shown in FIG. 6, the length of the second reed 3062 can be set to 65 mm, and other values can be set according to actual conditions. This is not limited here.

如图5、图6所示,在内存条101插入内存连接器中时,每对接触簧片结构306的四个接触点,将内存条101夹住,内存条101每一侧的金手指102与一个接触簧片结构306的两个接触点之间的加持力可以设置为100N,还可以根据实际情况,设置能其他数值。具体此处不做限定。As shown in FIG. 5 and FIG. 6, when the memory module 101 is inserted into the memory connector, the memory strips 101 are clamped by the four contact points of each pair of contact spring structures 306, and the gold fingers 102 on each side of the memory module 101. The holding force between the two contact points of a contact reed structure 306 can be set to 100N, and other values can be set according to actual conditions. This is not limited here.

如图9所示,当接触簧片结构306的第一簧片3061与内存条101的金手指102之间存在灰尘,导致第一簧片3061与金手指102之间的接触不良,接触簧片结构306可以通过第二簧片3062实现与内存条101的金手指102之间的电气连接,降低了内存接触不良的概率;由于结构简单,对生产环境的要求低,降低了生产过程中的设备成本,提高了生产效率。As shown in FIG. 9, when there is dust between the first reed 3061 contacting the reed structure 306 and the gold finger 102 of the memory stick 101, the contact between the first reed 3061 and the gold finger 102 is poor, and the contact reed is The structure 306 can realize the electrical connection with the gold finger 102 of the memory module 101 through the second reed 3062, thereby reducing the probability of poor memory contact; due to the simple structure, the requirements on the production environment are low, and the equipment in the production process is reduced. Cost increases production efficiency.

以上所述,以上实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述实施例对本申请进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。The above embodiments are only used to explain the technical solutions of the present application, and are not limited thereto; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still The technical solutions described in the embodiments are modified, or the equivalents of the technical features are replaced by the equivalents. The modifications and substitutions of the embodiments do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims (12)

一种双触点内存连接器,其特征在于,包括:A dual-contact memory connector, comprising: 绝缘底座(301)、卡扣(302)、接触簧片组件(303)和固定组件(304);Insulating base (301), buckle (302), contact spring assembly (303) and fixing assembly (304); 所述绝缘底座(301)具有插槽(305),所述插槽(305)用于插接内存条;The insulating base (301) has a slot (305) for inserting a memory module; 所述卡扣(302)位于所述绝缘底座(301)的两端,所述卡扣(302)位于所述绝缘底座(301)的上部,所述插槽(305)的开口位于所述绝缘底座(301)的上部,所述卡扣(302)与所述插槽(305)相互配合,用于在所述绝缘底座(301)上固定所述内存条;The buckle (302) is located at two ends of the insulating base (301), the buckle (302) is located at an upper portion of the insulating base (301), and an opening of the slot (305) is located at the insulation An upper portion of the base (301), the buckle (302) and the slot (305) cooperate to fix the memory module on the insulating base (301); 所述接触簧片组件(303)包含多对接触簧片结构(306),每个所述接触簧片结构(306)具有两个接触点,所述接触簧片组件(303)位于所述插槽(305)内,所述接触簧片结构(306)通过所述两个接触点与所述内存条的金手指连接;The contact spring assembly (303) includes a plurality of pairs of contact spring structures (306), each of the contact spring structures (306) having two contact points, the contact spring assembly (303) being located at the insertion In the slot (305), the contact spring structure (306) is connected to the gold finger of the memory module through the two contact points; 所述固定组件(304)位于所述绝缘底座(301)的底部,所述固定组件(304)用于固定所述绝缘底座(301)和印制电路板。The fixing component (304) is located at the bottom of the insulating base (301), and the fixing component (304) is used for fixing the insulating base (301) and the printed circuit board. 根据权利要求1所述的双触点内存连接器,其特征在于,The dual contact memory connector of claim 1 wherein: 所述接触簧片结构(306)包括第一簧片(3061)和第二簧片(3062),所述第二簧片(3062)位于所述第一簧片(3061)的下方,所述第二簧片(3062)到所述插槽(305)底部的距离小于所述第一簧片(3061)到所述插槽(305)底部的距离;The contact reed structure (306) includes a first reed (3061) and a second reed (3062), the second reed (3062) being located below the first reed (3061), a distance from the second reed (3062) to the bottom of the slot (305) is less than a distance from the first reed (3061) to the bottom of the slot (305); 所述第一簧片(3061)的末端与所述内存条抵持接触,所述第一簧片(3061)的末端为第一接触点;The end of the first reed (3061) is in anti-contact with the memory strip, and the end of the first reed (3061) is a first contact point; 所述第二簧片(3062)的末端与所述内存条抵持接触,所述第二簧片(3062)的末端为第二接触点。The end of the second reed (3062) is in abutting contact with the memory strip, and the end of the second reed (3062) is a second contact point. 根据权利要求1所述的双触点内存连接器,其特征在于,包括:The dual-contact memory connector of claim 1 comprising: 焊接引脚(307),所述焊接引脚(307)用于与所述印制电路板电气连接。A solder pin (307) for electrically connecting to the printed circuit board is soldered. 根据权利要求2所述的双触点内存连接器,其特征在于,The dual contact memory connector of claim 2 wherein: 所述第一接触点与所述内存条的接触区域为圆形凸包头,所述第二接触点与所述内存条的接触区域为圆形凸包头。The contact area of the first contact point and the memory strip is a circular convex head, and the contact area of the second contact point with the memory strip is a circular convex head. 根据权利要求2所述的双触点内存连接器,其特征在于,包括:The dual-contact memory connector of claim 2, comprising: 所述第一簧片(3061)为经过三次弯折的接触簧片,所述内存条与所述第一簧片(3061)之间的加持力达到第一预设值;The first reed (3061) is a three-folded contact reed, and the holding force between the memory strip and the first reed (3061) reaches a first preset value; 所述第二簧片(3062)为经过四次弯折的接触簧片,所述内存条与所述第二簧片(3062)之间的加持力达到所述第一预设值。The second reed (3062) is a contact spring that has been bent four times, and the holding force between the memory strip and the second reed (3062) reaches the first preset value. 根据权利要求1至5中任一项所述的双触点内存连接器,其特征在于,A two-contact memory connector according to any one of claims 1 to 5, characterized in that 所述接触簧片结构(306)的宽度与所述内存条的金手指的长度相适应。The width of the contact spring structure (306) is adapted to the length of the gold finger of the memory module. 根据权利要求1至5中任一项所述的双触点内存连接器,其特征在于,包括:The dual-contact memory connector according to any one of claims 1 to 5, comprising: 所述接触簧片结构(306)的厚度与所述内存条的金手指的宽度相适应。The thickness of the contact spring structure (306) is adapted to the width of the gold finger of the memory module. 根据权利要求1至5中任一项所述的双触点内存连接器,其特征在于,A two-contact memory connector according to any one of claims 1 to 5, characterized in that 所述插槽(305)设置在所述绝缘底座(301)的上部,所述绝缘底座(301)为凹形结构。The slot (305) is disposed at an upper portion of the insulating base (301), and the insulating base (301) has a concave structure. 根据权利要求1至5中任一项所述的双触点内存连接器,其特征在于,A two-contact memory connector according to any one of claims 1 to 5, characterized in that 每一对所述接触簧片结构(306)设置在所述插槽(305)的两侧,并平行于所述绝缘底座(301)的横截面。Each pair of the contact spring structures (306) are disposed on either side of the slot (305) and parallel to the cross section of the insulating base (301). 根据权利要求2所述的双触点内存连接器,其特征在于,所述第一簧片(3061)的数量与所述内存条的金手指的数量相同,所述第二簧片(3062)的数量与所述内存条的金手指的数量相同。The dual-contact memory connector according to claim 2, wherein the number of the first reeds (3061) is the same as the number of gold fingers of the memory module, and the second reed (3062) The number is the same as the number of gold fingers of the memory stick. 根据权利要求3所述的双触点内存连接器,其特征在于,所述焊接引脚(307)的数量与所述内存条的金手指的数量相同。The dual contact memory connector of claim 3 wherein the number of solder pins (307) is the same as the number of gold fingers of the memory module. 根据权利要求11所述的双触点内存连接器,其特征在于,所述焊接引脚(307)为金属弹片。The dual contact memory connector of claim 11 wherein said solder pins (307) are metal domes.
PCT/CN2018/093387 2017-11-10 2018-06-28 Dual-contact memory connector Ceased WO2019091127A1 (en)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207818948U (en) * 2017-11-10 2018-09-04 华为机器有限公司 A two-contact memory connector
CN112947701B (en) * 2021-02-25 2024-04-09 深圳市智微智能软件开发有限公司 Memory bank slot with good contact and small abrasion and server
CN113644464B (en) * 2021-06-28 2023-07-25 苏州浪潮智能科技有限公司 A contact type PCIE connection mechanism
CN115686147B (en) * 2022-10-26 2024-07-19 超聚变数字技术有限公司 Memory card and computing device
CN118034462A (en) * 2022-11-02 2024-05-14 长鑫存储技术有限公司 Server, dual-memory packaging module and connector

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2442303Y (en) * 2000-07-03 2001-08-08 番禺得意精密电子工业有限公司 Internal store insert slot for computer
CN201417837Y (en) * 2009-06-22 2010-03-03 乔讯电子(上海)有限公司 Card edge connector
CN101931136A (en) * 2009-06-22 2010-12-29 乔讯电子(上海)有限公司 Card edge connector
CN205680828U (en) * 2016-06-23 2016-11-09 王花瑞 A kind of FPC attachment means
CN107994364A (en) * 2017-11-10 2018-05-04 华为机器有限公司 Double-contact memory connector
CN207381578U (en) * 2017-10-13 2018-05-18 富加宜连接器(东莞)有限公司 A double-contact memory socket

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2442303Y (en) * 2000-07-03 2001-08-08 番禺得意精密电子工业有限公司 Internal store insert slot for computer
CN201417837Y (en) * 2009-06-22 2010-03-03 乔讯电子(上海)有限公司 Card edge connector
CN101931136A (en) * 2009-06-22 2010-12-29 乔讯电子(上海)有限公司 Card edge connector
CN205680828U (en) * 2016-06-23 2016-11-09 王花瑞 A kind of FPC attachment means
CN207381578U (en) * 2017-10-13 2018-05-18 富加宜连接器(东莞)有限公司 A double-contact memory socket
CN107994364A (en) * 2017-11-10 2018-05-04 华为机器有限公司 Double-contact memory connector
CN207818948U (en) * 2017-11-10 2018-09-04 华为机器有限公司 A two-contact memory connector

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