[go: up one dir, main page]

WO2019088323A1 - Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique - Google Patents

Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique Download PDF

Info

Publication number
WO2019088323A1
WO2019088323A1 PCT/KR2017/012400 KR2017012400W WO2019088323A1 WO 2019088323 A1 WO2019088323 A1 WO 2019088323A1 KR 2017012400 W KR2017012400 W KR 2017012400W WO 2019088323 A1 WO2019088323 A1 WO 2019088323A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer
substrate
electronic device
transfer member
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/012400
Other languages
English (en)
Korean (ko)
Inventor
이건재
이한얼
김도현
신정호
홍성광
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Center for Integrated Smart Sensors Foundation
Original Assignee
Center for Integrated Smart Sensors Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Center for Integrated Smart Sensors Foundation filed Critical Center for Integrated Smart Sensors Foundation
Priority to PCT/KR2017/012400 priority Critical patent/WO2019088323A1/fr
Publication of WO2019088323A1 publication Critical patent/WO2019088323A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the present invention relates to a lamination structure of electronic devices using a transfer member, transfer equipment for making the electronic device, and a method of manufacturing an electronic device using the transfer member. More particularly, After the inorganic inorganic multilayer is formed, the inorganic light emitting diode is previously attached to the transfer substrate on the mother substrate, and then transferred onto the flexible target substrate on which the electrode is formed via the transfer member. And transferring the separated light emitting diode chips to an individual chip or an array of the flexible light emitting diode devices.
  • a method of manufacturing a semiconductor device comprising: forming a target substrate having a flexible property on which electrodes are formed and a carrier wafer in a vertically aligned state, And more particularly to a transfer substrate on which a light emitting diode inorganic multilayer is temporarily attached as an example of an electronic device isolated on a chip-by-chip basis in a mother substrate,
  • the present invention relates to a technique capable of performing bonding by applying a strong pressure and a temperature while arranging a transfer member capable of electrical connection and adhesion between the transfer substrate and a target substrate in a state that the target substrate on which electrodes are formed is aligned vertically will be.
  • a flexible electronic device refers to an electronic device that can bend or bend as a predetermined force is applied.
  • a flexible element not only the flexibility of the element itself but also the coating layer covering the substrate and the element under the element must have a certain level of availability.
  • a typical ultra high density integrated circuit (VLSI) is manufactured by a method of manufacturing a plurality of electronic devices such as transistors and capacitors which are made lighter or smaller on a silicon substrate.
  • VLSI ultra high density integrated circuit
  • the process of stably coupling the flexible electronic device to the flexible substrate in a state where the flexible substrate, the transfer substrate, and the transfer member disposed between the substrates are vertically disposed requires high precision.
  • the present invention has been made to solve the above-mentioned problems of the prior art, and it is an object of the present invention to provide a light emitting diode (LED) organic multilayer layer which constitutes an inorganic light emitting diode on a mother substrate, After the separated chips are mounted on a carrier wafer, the mother substrate is removed, and the separated light emitting diode chips are transferred and interconnected to a flexible target substrate on which electrodes are formed via a transfer member, Chip or an array in the form of a chip.
  • LED light emitting diode
  • the present invention also relates to a method for manufacturing a semiconductor device, which comprises a transfer substrate on which a flexible electronic element temporarily isolated from a mother substrate by a chip is temporarily mounted, and a target substrate on which an electrode is formed,
  • An object of the present invention is to provide a device for arranging a transfer member capable of electrical connection and adhesion between the transfer substrate and a target substrate in an aligned state and applying bonding at a high pressure and temperature.
  • a stacked structure of electronic devices using a transfer member including: a target substrate; A lower electrode formed on the target substrate; An electronic device bonded onto the lower electrode; A contact electrode formed on the electronic device; A transfer member disposed between the lower electrode and the electronic device on the target substrate; And an upper electrode connected to the electronic device, wherein the transfer member contacts the electronic device while being attached to the transfer substrate, and then transferred to the target substrate.
  • the electronic device is a micro LED device or a high integration circuit (LSI).
  • LSI high integration circuit
  • the target substrate is a flexible plastic substrate or a polymer substrate.
  • the electronic device is a structure in which the electronic device is bonded to the transfer member deformed by an external force while being temporarily attached on a transfer substrate and transferred to the target substrate.
  • the external force is any one of a group including heat, pressure, ultrasound, physical force, and van der Waals force
  • the transfer member is any one of a group of conductive adhesive materials including ACF, SOCF, ACA and Solder Ball.
  • a method of manufacturing an electronic device using a transfer member comprising: preparing a mother board; Forming an inorganic material-based multilayer thin film layer constituting an electronic device on the mother substrate; Separately separating the electronic devices formed in the multilayer thin film layer; Attaching a transfer substrate to the electronic device; Removing the mother board; Aligning the position of the electronic device on the transfer substrate with the lower electrode formed on the target substrate; Positioning and transferring a transfer member between the target substrate and the electronic device; And removing the transfer substrate.
  • the electronic device is a micro LED device or a high integration circuit (LSI).
  • LSI high integration circuit
  • the target substrate is a flexible plastic substrate or a polymer substrate.
  • the step of separately separating the electronic devices is a step of separating the electronic devices by chips after the masking and etching.
  • the step of attaching the transfer substrate formed on the multilayer thin film layer to the electronic device includes forming a first protective layer on a side surface of the electronic device to protect the electronic device.
  • the primary protective layer is an oxide layer or a polymer layer.
  • the method further includes forming an upper electrode connected to the electronic device after removing the transfer substrate,
  • the secondary protective layer is an oxide layer or a polymer layer.
  • the transfer substrate is any one of a group including PDMS, Thermal Release Tape, UV Release Tape, and Water Soluble Tape.
  • the bonding step when the electronic element temporarily attached to the transfer substrate is bonded with the transfer member selectively applied to the target substrate, only the electronic element on the region of the target substrate to which the transfer member is applied Perform bonding.
  • the bonding step only a part of the electronic elements on the transfer substrate are applied to the transfer member, thereby selectively transferring a part of the electronic elements.
  • the bonding step when the transfer member is entirely applied on the target substrate and the entire electronic device on the transfer substrate is bonded, all of the electronic devices are simultaneously transferred and interconnected.
  • the step of removing the mother substrate is performed through an etching or laser lift-off process.
  • the transfer member is one of a group including an anisotropic conductive film, a non-conductive film (NCF), a self-organizing conductive film (SOCF), an anisotropic conductive adhesive (ACA), and a solder ball.
  • NCF non-conductive film
  • SOCF self-organizing conductive film
  • ACA anisotropic conductive adhesive
  • the bonding step uses any one of ultrasonic wave, physical force, van der Waals force, and bonding means including heat and pressure.
  • the masking is one of a group including metal masking, masking using PR, masking using a polymer, and soft masking.
  • a transfer and packaging apparatus comprising: a hollow process chamber; A base plate disposed within the process chamber; A moving module disposed above the base plate; A stage module movably arranged in parallel with the ground by the moving module; And an optical controller movably disposed on the stage module in a spaced apart relationship therebetween; And a transfer substrate adsorption unit disposed on the upper side of the stage module so as to be able to move up and down.
  • the target substrate mounted on one of the plurality of stages constituting the stage module and the target substrate mounted on the transfer substrate adsorption unit The transfer substrate is transferred using any one of a plurality of protocols including stamping, ACF, SOCF, and UV methods.
  • a transfer method comprising: preparing a mother substrate on one of a plurality of stages constituting the stage module; Forming an inorganic material-based multilayer thin film layer constituting an electronic device on the mother substrate; Separately separating the electronic devices formed in the multilayer thin film layer; Coupling an electronic device on the transfer substrate by coupling the transfer substrate mounted on the transfer substrate adsorption unit and the mother substrate; Removing the mother board; Disposing a target substrate on another stage of the plurality of stages constituting the stage module; Aligning the transfer substrate adsorption unit and the stage on which the target substrate is mounted; Placing the transfer member between the target substrate and the transfer substrate through a process of lowering the transfer substrate adsorption unit to apply an external force, and then joining the transfer member; And removing the transfer substrate.
  • a light-emitting diode inorganic multilayer having inorganic light emitting diodes formed on a mother substrate is formed, and is isolated on a chip-by-chip basis.
  • a flexible target substrate, And the flexible LED device is implemented as an individual chip or an array by transferring and interconnecting the separated LED chips through the intermediary of an anisotropic conductive film (ACF) as an example of a transfer member in the process of transferring light emitting diodes.
  • ACF anisotropic conductive film
  • Film which not only provides an adhesive force for transfer, but also serves as an interconnection, which is advantageous in that the process is simple and stable.
  • the transfer substrate which is a temporary substrate
  • the flexible target substrate due to the adhesive force only in the region where the transfer member is applied, selective transfer is possible for each region.
  • RGB pixels can be formed using a quantum dot (QD) as a color filter and a flexible display can be formed.
  • QD quantum dot
  • the final structure of the flexible micro inorganic light emitting diode device through the manufacturing method according to the present invention is a flexible vertical light emitting diode (Flexible Vertical Light Emitting Diode) which is very thin and flexible, so that it can be inserted into a thin gap between the brain and the skull This is possible.
  • a flexible vertical light emitting diode Flexible Vertical Light Emitting Diode
  • the present invention utilizes an anisotropic conduction film (ACF) for the transfer of light emitting diodes, which enables simultaneous transfer and interconnection, so that the process is stable and mass production is possible and is suitable for mass production.
  • ACF anisotropic conduction film
  • FIG. 1 to 13 are views for sequentially illustrating a method of manufacturing a flexible micro inorganic light emitting diode device according to an embodiment of the present invention.
  • FIG. 14 is a view for explaining a final structure of a flexible micro inorganic light emitting diode device through the manufacturing method of the present invention, and the micro inorganic light emitting diode device can be inserted into a thin gap between a brain and a skull of a rodent.
  • FIG. 15 shows the overall appearance of a transfer device for manufacturing a flexible electronic device according to an embodiment of the present invention.
  • FIG. 16 shows a specific configuration of the transfer equipment according to FIG.
  • FIG. 17 shows a method of transferring an electronic device by a roll-to-roll method.
  • flexible used in the present invention is a term distinguished from a silicon substrate or the like having rigid characteristics.
  • the term " flexible " refers to a term including a characteristic that a substrate is bent or folded at a certain angle, to be.
  • the electronic devices attached on a transfer substrate are transferred and interconnected via a transfer member onto a flexible target substrate on which electrodes are formed, thereby realizing a flexible electronic device in a chip or an array form.
  • the electronic device includes a micro inorganic light emitting diode (LED) device and a high integration circuit (LSI).
  • the target substrate may be a flexible plastic substrate or a polymer substrate.
  • a micro light emitting diode device which is an electronic device, refers to a micro LED having a size of 10 to 100 micrometers ( ⁇ ), which is one tenth of the length of a conventional light emitting diode chip and about one hundredth of an area.
  • the micro light emitting diode has a faster response speed than the conventional LED, supports low power and high brightness, and has an advantage that it is not broken when it is bent when applied to a display. Therefore, it can be applied to a smart watch, a smart fiber, and a head-mounted display (HMD) device requiring an ultra light weight.
  • HMD head-mounted display
  • an inorganic material-based multilayer thin film 200 constituting a light emitting diode (LED) is deposited and formed on a mother wafer 100.
  • the multilayer thin film 200 stacked on the mother substrate 100 is different depending on the type of the LED, and accordingly, the type of the mother substrate is also different.
  • the mother substrate 100 includes GaAs substrates (GaP_yellow and green light, AlGaAs_red and IR light, AlGaInP_yellow, orange and red light), and sapphire substrates (GaN_blue light, InGaN_blue, green, and UV light) Several substrates can be applied to the process.
  • GaAs substrates GaP_yellow and green light, AlGaAs_red and IR light, AlGaInP_yellow, orange and red light
  • sapphire substrates GaN_blue light, InGaN_blue, green, and UV light
  • the micro LED device 300 is isolated on the multilayer thin film 200 by etching after masking, and a contact electrode (Top Contact) is formed on the separated LED chip. .
  • the masking may be any one of a group including metal masking, masking using PR, masking using a polymer, and soft masking.
  • the present invention is not limited thereto, and other masking techniques Of course, this is possible.
  • a carrier wafer 400 which is a temporary substrate, is attached to an upper portion of the light emitting diode chip 300.
  • the contact electrode of the light emitting diode chip 300 is inserted and attached to the inside of the lower surface of the transfer substrate 400 in the attaching process.
  • the transfer substrate 400 that can be used in the above process is PDMS, Thermal Release Tape, UV Release Tape, and the like, but it is not limited thereto and various other substrates capable of attaching the light emitting diode chip can be applied.
  • the mother board 100 is removed through a physical or chemical method, and ultimately, the micro-LED chips are attached to the transfer substrate 400. Specifically, removal of the mother substrate 100 is performed through an etching or laser lift-off process.
  • a first protective layer is formed on the side surface of the light emitting diode before the mother substrate 100 is removed. That is, a suitable primary protective layer such as an oxide layer and a polymer layer may be formed on the side surface of the light emitting diode to protect the light emitting diode during the removal process of the mother substrate 100.
  • the positions of the lower electrode 510 formed on the flexible substrate 500 and the LED chip 300 on the transfer substrate 400 are aligned and the transfer member 600 is mounted on a flexible substrate 500 and the transfer substrate 400.
  • bonding is performed on the transferring member 600 using any one of bonding methods including ultrasonic wave, physical force, van der Waals force, and heat and pressure.
  • the transfer member 600 may be used as the transfer member 600. It should be noted that the transfer member is not limited thereto and various other substrates capable of attaching the light emitting diode chip can be applied.
  • ACF anisotropic conductive film
  • the anisotropic conductive film (ACF) applied to the present invention is thermocompression bonding bonded by applying heat and pressure, and is excellent in adhesion strength after bonding and also serves as an electrical interconnection, so that the process is simple and stable. Moreover, the final structure is simple, and the durability is strong due to warping.
  • the process of coupling the transfer member 600 between the flexible substrate 500 and the transfer substrate 400 is not limited to the bonding process and may be applied to various other processes or processes Of course, this is possible.
  • the present invention can perform various processes on the process of bonding the flexible substrate 500 to the inorganic light emitting diode device 300 on the transfer substrate 400 through the transfer member 600.
  • the transfer member 600 is entirely applied onto the flexible substrate 500, and only a part of the inorganic light-emitting diode elements 300 of the transfer substrate 400 is selectively bonded. That is, only a part of the LED elements on the transfer substrate is applied to the transfer member, thereby selectively transferring a part of the LED elements.
  • RGB pixels may be formed using a quantum dot (QD) as a color filter to form a flexible display.
  • QD quantum dot
  • the light emitting diode chips 300 on the transfer substrate 400 can be transferred according to the application region of the transfer member 600. That is, since the light emitting diode chip is transferred from the temporary transfer substrate to the flexible substrate in an adhering force only in the region where the transfer member is applied, selective transfer is possible for each region.
  • RGB pixels can be formed using a quantum dot (QD) as a color filter, and a flexible display can be formed.
  • QD quantum dot
  • the flip-chip bonding packaging technique is suitable for flexible packaging because the final shape is simple in planar structure.
  • Flip-chip bonding is a type of packaging method in which chips or devices are turned over to face a substrate and electrical connection is achieved.
  • packaging using ACF maintains electrical connections well in a mechanically very flexible and warped situation.
  • Flip-chip bonding is a process of applying heat, pressure, or ultrasonic waves and pressure after facing an LED device and a flexible substrate.
  • the vertically opposite electrodes exhibit conduction characteristics and exhibit insulation characteristics in the horizontal direction.
  • Thermo-setting Resin hardens and firmly bonds the LSI and PCB mechanically.
  • the removal process of the transfer substrate 400 is different depending on the transfer substrate used.
  • the transfer substrate 400 may have three substrates, such as PDMS, Thermal Release Tape, and UV Release Tape.
  • the three transfer substrates may be removed by sequential removal speed, It is possible.
  • a secondary protection layer 700 is formed for electrical insulation before connecting the upper electrode 800 on the contact electrode formed on the light emitting diode chip 300.
  • a contact hole is formed for contact with the contact electrode.
  • the secondary protective layer 700 is formed by bonding the inorganic electrode 300 to the flexible substrate 500 by the transfer member 600 and then forming the upper electrode 800 on the inorganic light emitting diode 300 And may be an intermediate layer formed to separate the upper electrode and the lower electrode from each other in the empty space around the inorganic light emitting diode element before forming.
  • an upper electrode 800 is formed on a secondary protective layer 700.
  • RGB pixels can be formed, thereby enabling a flexible display implementation.
  • a passivation film 900 which is a final protective film, is formed by covering the second protective layer 700 and the upper electrode 800.
  • FIG. 14 there is shown an exemplary final structure of a flexible micro inorganic light emitting diode device through the manufacturing method of the present invention and a state where the micro inorganic light emitting diode device is inserted into a thin gap between a brain and a skull of a rodent.
  • the final structure of the flexible micro inorganic light emitting diode device is a flexible vertical light emitting diode (Flexible Vertical Light Emitting Diode), in which two electrodes are interconnected at the upper and lower parts of the LED.
  • the above structure has a large window for emitting light, and thus has a good luminous efficiency, is easy to accumulate, and is effective in heat release. It is also suitable for bent elements.
  • micro inorganic light emitting diode Since the micro inorganic light emitting diode is very thin and flexible, it can be inserted into a thin gap between the brain and the skull.
  • the present invention can be applied not only to the flexible display using the micro-sized inorganic light emitting diode but also to inorganic light emitting diode lighting, wearable devices and biocompatible devices.
  • the present invention utilizes an anisotropic conduction film (ACF) for the transfer of light emitting diodes, which enables simultaneous transfer and interconnection, so that the process is stable and mass production is possible and is suitable for mass production.
  • ACF anisotropic conduction film
  • the transfer and packaging equipment includes a hollow process chamber 1, a base plate 10 disposed in the process chamber 1, a transfer module (not shown) disposed on top of the base plate 10, An optical controller 30 movably disposed on the upper portion of the stage module 20 so as to be movable up and down on the upper side of the stage module 20, And a transfer substrate adsorption unit 40 disposed therein.
  • the process chamber 1 may be equipped with a vacuum pump and a separate dust collecting device to form a clean space in which the transfer and packaging processes are performed.
  • the process chamber maintains a vacuum state lower than the atmospheric pressure, so that a much higher yield and workability than in a non-vacuum state can be obtained and a high quality product can be obtained.
  • a transparent monitoring window for observing the inside of the process chamber or a display unit using an imaging device installed in the process chamber may be provided.
  • process chambers are selectively adoptable and can be fabricated without installation of process chambers.
  • the base plate 10 serves as a support for transfer and packaging equipment, and can basically have a high rigidity, and at the same time, have a damper member for preventing vibration and shock.
  • the XY axis introduced in the present invention defines the direction of motion in a state parallel to the paper, and the X axis indicates the horizontal direction and the Y axis indicates the vertical direction.
  • the Z axis defines a direction perpendicular to the paper, and is orthogonal to both the X axis and the Y axis.
  • the movement module moves the stage module along the XY axis direction on the base plate and includes a Y axis movement part that moves in the direction perpendicular to the X axis movement part and the X axis movement part.
  • the transfer substrate adsorption unit accurately moves the electronic device in a state of being vertically movable up and down on the upper side of the stage module, and precisely regulates the pressure and the speed to enable simultaneous connection with transfer.
  • the pressure applied to the electronic device using the transfer substrate adsorption unit 40 is an important factor in transfer / connection using ACF, NOCF, etc., and the speed of moving the electronic device is an important factor in the stamping method. This is closely related to the possibility of transfer success depending on the transfer speed of the transfer substrate.
  • the pressure and speed applied in this transfer and packaging equipment are freely controlled through the transfer substrate adsorption unit. That is, the pressure is controlled in the range of 1 kg to 20 kg, and the speed is adjustable from 1 ⁇ m / s to 1000 mm / s.
  • the stage module 20 includes a stage support 22 disposed on the moving module and a plurality of stages fixed on the stage support 22.
  • the plurality of stages have separate stages in order to enable transfer using various protocols including a stamping method, ACF, SOCF, UV, and the like. That is, any one of the stages arranged along the XY plane is positioned so that the transferring process is performed through the process of moving the stage support by the movement module.
  • the stage module 20 is freely rotatable in the xy, yz, zx plane for the angle of the stage support 22 for precise alignment.
  • the plurality of stages may be symmetrically disposed on both sides of the first stage 25 at the center as an embodiment.
  • the first and second stages 26 and 27 are arranged in parallel with one side of the first stage 25, and the second and third stages 26 and 27 are disposed around the first stage 25 And the fourth and fifth stages 28 and 29 arranged opposite to each other.
  • the stage module 20 may be deformed and may be used in accordance with the application.
  • heat and pressure may be applied simultaneously in the first stage 25, pressure may be applied only in the second stage 26, and UV irradiation may be performed in the third stage 27.
  • the stamping process can be performed through the fourth and fifth stages 28 and 29,
  • the mother substrate placed on the fourth stage 28 by moving the stage module 20 is transferred to the transfer substrate adsorption unit 40
  • the light emitting diode inorganic composite layer on the mother substrate is placed on the transfer member.
  • the stage module 20 is appropriately moved and aligned so that the target substrate placed on the fifth stage 29 is immediately below the transfer substrate adsorption section 40.
  • Such an alignment process may be possible through an optical control system disposed between the fifth stage and the transfer substrate adsorption unit.
  • the light-emitting diode inorganic composite layer which is an electronic element integrated on the mother substrate, is transferred to a transfer substrate attached to a sample chuck constituting a transfer substrate adsorption unit.
  • the electronic device integrated on the mother substrate is transferred to the target substrate by transferring the electronic device on the transfer substrate to the target substrate.
  • the transfer and packaging equipment enables a 3D laminating process of an electronic device on a target substrate continuously through a stage module, an optical controller, a transfer substrate adsorbing part and the like. That is, in the state of using the transfer member, the electronic elements of the transfer substrate bonded to the transfer substrate adsorption unit are simultaneously connected and transferred onto the target substrate.
  • the optical controller 30 is disposed between the transfer substrate adsorption unit and the stage module through a process of being transferred along the X axis direction through a separate transfer device.
  • the optical control system is positioned between the first stage and the transfer substrate adsorption unit, with the first stage disposed at the center among the plurality of stages being positioned in the direction perpendicular to the transfer substrate adsorption unit.
  • the optical controller shifts between the transfer substrate coupled on the transfer substrate sorbent and the target substrate coupled onto the first stage to simultaneously identify the upper transfer substrate and the lower target substrate.
  • the microscope image is checked through a computer connected to the instrument. That is, the optical controller allows the electronic device attached to the temporary transfer substrate on the upper side and the target substrate on the lower side to be checked on the same screen at the same time, thereby enabling accurate alignment.
  • the images of the upper transfer substrate and the lower target substrate are displayed on the monitor in an overlapped manner, and the user aligns them by directly moving and adjusting the angle of the XY axis.
  • the optical controller is equipped with a special microscope, which allows precise alignment.
  • misalignment is minimized by adjusting the angles in the xy, yz and zx directions of the respective stages fixing the target substrate and the transfer substrate.
  • the present invention enables transfer using various protocols including stamping method, ACF, SOCF, UV, and the like.
  • the process of transferring the electronic device on the transfer substrate to the target substrate is as follows.
  • bonding is performed on the transferring member using any one of bonding methods including ultrasonic waves, physical force, van der Waals force, and heat and pressure.
  • the process of coupling the transfer member between the target substrate and the transfer substrate is not limited to the bonding process, and various other techniques or processes for bonding or fusing a plurality of substrates can be applied.
  • the temperature of the target substrate and the transfer substrate can be freely adjusted by inserting the heat ray on any one of the plurality of stages, the utilization of the transfer method is widened.
  • the present invention can manufacture the electronic device using the transfer member in a roll-to-roll manner.
  • the roll-to-roll method which is another embodiment of the stage module 20, includes a stage support 22 supported by a plurality of rollers as shown in FIG. 17, and a plurality of stages fixed on the stage support 22.
  • the transfer substrate is removed from one stage 26 of a plurality of stages arranged in a line along the longitudinal direction of the stage support 22.
  • a roll-shaped transfer substrate attracting portion attached along the outer peripheral surface of the plurality of transfer substrates is disposed on the upper side of the stage module.
  • the stage support is conveyed by a plurality of rollers.
  • a target substrate which receives the electronic elements from the transfer substrate is disposed.
  • a transfer substrate attached on a roll-shaped transfer substrate adsorbing part and a target substrate placed on a plurality of stages are confirmed at the same time with an optical controller disposed on one side of the transfer substrate adsorption part. That is, in one embodiment, the transfer substrate attached on the transfer substrate adsorption unit is identified through the lateral side of the optical control system, and the target substrate is confirmed through the optical control system.
  • the transfer and packaging process is performed by a pressing action between the transfer substrate and the target substrate positioned at the lower one of the transfer substrates attached to the transfer substrate attracting unit for rotational driving, Thereby completing the transfer of the light emitting diode chip on the transfer substrate onto the target substrate.
  • the stage module may have the same roll shape as the transfer substrate adsorption section.
  • the plurality of roller-shaped stage modules and the transfer substrate adsorption unit are configured to face each other, but the facing roller-to-roller distances are different. In particular, as the distance between the rollers becomes shorter, the distance between the plurality of stages becomes shorter, and the devices are transferred at a plurality of stages at the shorter distance.
  • the present invention is characterized in that a plurality of transfer members are arranged at predetermined intervals in the circumferential direction along the outer circumferential surface of the transfer substrate adsorbing portion having a roll shape.
  • the array interval is set to correspond to the distance between the plurality of stages.
  • an electronic device is first bonded to a transfer member coupled to a transfer substrate adsorption unit by using a mother substrate, which is a fixed substrate for protecting the flexible VLSI device, rather than a sensitive flexible VLSI,
  • the electronic device bonded to the transfer member is automatically bonded in the lower direction of the transfer member, so that a relatively stable transfer of the device is possible.
  • a light-emitting diode inorganic composite layer in which an inorganic light-emitting diode is formed on a mother substrate is formed, and then the organic light-emitting diode is separated from the substrate by etching through an anisotropic conductive film And anisotropic conductive film (ACF) is used in the process of transferring the light emitting diodes.
  • ACF anisotropic conductive film

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne une structure d'empilement d'un élément électronique utilisant un élément de transfert, ladite structure comprenant : un substrat cible ; une électrode inférieure formée sur le substrat cible ; un élément électronique lié sur l'électrode inférieure ; une électrode de contact formée sur l'élément électronique ; un élément de transfert disposé sur le substrat cible, entre l'électrode inférieure et l'élément électronique ; et une électrode supérieure connectée à l'élément électronique, l'élément de transfert venant en contact avec l'élément électronique avant d'être transféré au substrat cible, tout en étant fixé sur un substrat de support.
PCT/KR2017/012400 2017-11-03 2017-11-03 Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique Ceased WO2019088323A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2017/012400 WO2019088323A1 (fr) 2017-11-03 2017-11-03 Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2017/012400 WO2019088323A1 (fr) 2017-11-03 2017-11-03 Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique

Publications (1)

Publication Number Publication Date
WO2019088323A1 true WO2019088323A1 (fr) 2019-05-09

Family

ID=66333114

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/012400 Ceased WO2019088323A1 (fr) 2017-11-03 2017-11-03 Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique

Country Status (1)

Country Link
WO (1) WO2019088323A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114179537A (zh) * 2020-09-14 2022-03-15 东北大学秦皇岛分校 一种基于聚焦超声控制smp印章的微转印方法及其装置
TWI894976B (zh) * 2024-05-23 2025-08-21 隆達電子股份有限公司 封裝結構

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101149677B1 (ko) * 2010-01-20 2012-07-11 주식회사 엘지실트론 플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자, 태양전지, ｌｅｄ
KR101375054B1 (ko) * 2012-12-04 2014-03-17 한국과학기술원 플렉서블 소자 제조방법, 이를 이용한 플렉서블 발광 다이오드 제조방법 및 이에 의하여 제조된 플렉서블 발광 다이오드
KR20140032599A (ko) * 2012-09-06 2014-03-17 (주)아이씨디 전원 공급 전극, 상기 전극을 구비한 기판 홀딩부, 및 상기 기판 홀딩부를 구비하는 열전사 장치
KR20170079930A (ko) * 2015-12-31 2017-07-10 한국광기술원 Ｌｅｄ 구조체 및 이의 이송방법
KR20170116857A (ko) * 2016-04-12 2017-10-20 한국생산기술연구원 플렉시블 led 기판의 제조 방법 및 이를 이용한 플렉시블 led 기판

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101149677B1 (ko) * 2010-01-20 2012-07-11 주식회사 엘지실트론 플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자, 태양전지, ｌｅｄ
KR20140032599A (ko) * 2012-09-06 2014-03-17 (주)아이씨디 전원 공급 전극, 상기 전극을 구비한 기판 홀딩부, 및 상기 기판 홀딩부를 구비하는 열전사 장치
KR101375054B1 (ko) * 2012-12-04 2014-03-17 한국과학기술원 플렉서블 소자 제조방법, 이를 이용한 플렉서블 발광 다이오드 제조방법 및 이에 의하여 제조된 플렉서블 발광 다이오드
KR20170079930A (ko) * 2015-12-31 2017-07-10 한국광기술원 Ｌｅｄ 구조체 및 이의 이송방법
KR20170116857A (ko) * 2016-04-12 2017-10-20 한국생산기술연구원 플렉시블 led 기판의 제조 방법 및 이를 이용한 플렉시블 led 기판

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114179537A (zh) * 2020-09-14 2022-03-15 东北大学秦皇岛分校 一种基于聚焦超声控制smp印章的微转印方法及其装置
TWI894976B (zh) * 2024-05-23 2025-08-21 隆達電子股份有限公司 封裝結構

Similar Documents

Publication Publication Date Title
WO2020013478A1 (fr) Dispositif d'affichage à micro-del et son procédé de fabrication
WO2019017670A1 (fr) Appareil et procédé permettant de fabriquer un module de del
WO2019160307A1 (fr) Procédé de mise en réseau de puces à micro-del pour produire un panneau d'affichage à del et support à puces multiples utilisé à cet effet
WO2019124685A1 (fr) Ensemble tête de transfert et appareil de transfert de diode électroluminescente
WO2018030695A1 (fr) Module de del et son procédé de préparation
US10290785B2 (en) Laminating structure of electronic device using transferring element, transferring apparatus for fabricating the electronic device and method for fabricating the electronic device
WO2021125775A1 (fr) Procédé de transfert de micro-del et appareil de transfert de micro-del
WO2021125780A1 (fr) Procédé de restauration d'éléments électroluminescents et panneau d'affichage comprenant des éléments électroluminescents restaurés
WO2021145522A1 (fr) Procédé de fabrication d'appareil d'affichage, appareil d'affichage et structure de fabrication d'appareil d'affichage
WO2018070801A2 (fr) Film de support multicouche, procédé de transfert d'élément l'utilisant, et procédé de fabrication de produit électronique pour fabriquer un produit électronique au moyen de ce même procédé de transfert d'élément
WO2018012783A1 (fr) Plaque de mandrin pour post-traitement de semi-conducteurs, structure de mandrin comportant ladite plaque de mandrin et appareil de séparation de puces comportant ladite structure de mandrin
WO2021002653A1 (fr) Procédé et appareil de fabrication de panneau à del
WO2020096325A1 (fr) Support de correction d'erreur de positionnement de micro-del et système de transfert de micro-del
WO2019146819A1 (fr) Procédé de fabrication de dispositif d'affichage utilisant des éléments électroluminescents à semi-conducteur et dispositif d'affichage
WO2017146326A1 (fr) Procédé servant à fixer une pince pour un emballage à semi-conducteurs, et appareil de fixation de pinces multiples associé
KR20180127045A (ko) 전사 부재를 이용한 전자 소자의 적층 구조 및 상기 전자 소자의 제조 방법
WO2021096099A1 (fr) Procédé de fabrication de dispositif d'affichage et dispositif d'affichage ainsi fabriqué
WO2019088323A1 (fr) Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique
WO2013024916A1 (fr) Puce de conversion de longueur d'onde pour une diode électroluminescente, et son procédé de fabrication
WO2015064953A1 (fr) Procédé de fabrication d'un composant électronique
WO2016013904A1 (fr) Carte de circuit imprimé
WO2021101341A1 (fr) Procédé de transfert d'élément, et procédé de fabrication de panneau électronique l'utilisant
KR102009492B1 (ko) 플렉서블 전자 소자 제작을 위한 전사 장비 및 이를 이용한 전사 방법
WO2016018071A1 (fr) Module de source de lumière
WO2019190058A1 (fr) Dispositif de transfert de puce et procédé de transfert de puce utilisant celui-ci

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17931067

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17931067

Country of ref document: EP

Kind code of ref document: A1