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WO2019080819A1 - 光生成方法及系统 - Google Patents

光生成方法及系统

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Publication number
WO2019080819A1
WO2019080819A1 PCT/CN2018/111323 CN2018111323W WO2019080819A1 WO 2019080819 A1 WO2019080819 A1 WO 2019080819A1 CN 2018111323 W CN2018111323 W CN 2018111323W WO 2019080819 A1 WO2019080819 A1 WO 2019080819A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
region
type
light source
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/111323
Other languages
English (en)
French (fr)
Inventor
王丽江
王炜
朱松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Bixiufu Enterprise Management Co Ltd
Original Assignee
Shanghai Bixiufu Enterprise Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Bixiufu Enterprise Management Co Ltd filed Critical Shanghai Bixiufu Enterprise Management Co Ltd
Priority to JP2020520516A priority Critical patent/JP2021500599A/ja
Priority to US16/757,378 priority patent/US11281105B2/en
Priority to EP18871502.3A priority patent/EP3702838A4/en
Priority to CA3078848A priority patent/CA3078848A1/en
Priority to KR1020207013251A priority patent/KR20200078533A/ko
Publication of WO2019080819A1 publication Critical patent/WO2019080819A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0961—Lens arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1086—Beam splitting or combining systems operating by diffraction only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G02B26/023—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light comprising movable attenuating elements, e.g. neutral density filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses

Definitions

  • the invention belongs to the field of optical technology, and relates to a light for photolithography, in particular to a light generating method and system.
  • Lithography is an important technical link in the current industrial precision processing, especially in the field of micro-nano processing, such as integrated circuit chips, MEMS devices, optical integration technology, precision optics and other fields.
  • the current mainstream high-precision lithography manufacturing processes mainly include optical projection micro-lithography, electron beam direct writing, ion beam processing, and laser interference lithography.
  • the improvement in resolution can be achieved by increasing the numerical aperture NA of the lithography objective lens and shortening the exposure wavelength ⁇ .
  • the method of adding numerical aperture to the lithography technology is to use immersion lithography, and the most mature technology for short-wavelength exposure is to use an ArF light source with a wavelength of 193 nm. Even with the method of immersing the NA, the minimum resolution cannot be achieved. Break through 45nm.
  • the existing exposure-based lithography technology is based on the improvement of the resolution of the Rayleigh formula using the traditional optical principle, mainly using the immersion method to increase the numerical aperture and the use of shorter wavelength light sources, especially shorter wavelength light sources. It plays a decisive role in improving resolution, but excimer light sources, electron beams and even extreme ultraviolet light sources are complex, difficult, and costly to manufacture. Therefore, direct super-resolution exposure lithography machines are expensive and have limited resolution. The diffraction limit of the light source.
  • an object of the present invention to provide a light generating method and system for solving the Rayleigh resolution of an existing light source that is affected by the diffraction limit of the light source and is difficult to break through.
  • the present invention provides a light generating method, including: generating a first light; the first light energy forming a first region, a second region, and a third region; The light intensity of the first region is higher than the light intensity at the second region and the third region, respectively; generating a second light; the second light can simultaneously illuminate the first region and the second region; generating a third light And the third light energy simultaneously illuminates the first region and the third region; and respectively controls light intensities of the second light and the third light.
  • the first light forms a discrete first region through a first type of light conversion component.
  • the first light forms a continuous first region through a second type of light conversion component.
  • the first light forms a hybrid first region through a third type of light conversion component; the hybrid first region includes a discrete first region and a continuous first region.
  • the area of the second region and the third region is on the order of nanometers.
  • the region of the second region illuminated by the second light is a first super-resolution region; and the first super-resolution region has an inner diameter ranging from 0 to 100 nanometers.
  • the first super-resolution region has an inner diameter ranging from 0 to 10 nanometers.
  • the region of the third region illuminated by the third light is a second super-resolution region; and the second super-resolution region has an inner diameter ranging from 0 to 100 nanometers.
  • the second super-resolution region has an inner diameter ranging from 0 to 10 nanometers.
  • the method further includes: controlling the light intensity of the second light or/and the third light by controlling the switching of the second light or/and the third light Or / and control of the light intensity of the second light by controlling the optical radiation power of the light source of the second light; or / and by controlling the optical radiation power of the light source of the third light Control of the light intensity of the third light; or/and control of the light intensity of the first light by controlling the optical radiation power of the light source of the first light.
  • the second light and the third light are from the same light source; or the second light and the third light are from different light sources.
  • the present invention also provides a light generating system, the light generating system comprising: a first light source generating first light; the first light energy forming a first area, a second area and a third area; the first light The light intensity in the first region is higher than the light intensity in the second region and the third region, respectively; the second light source generates second light; the second light can simultaneously illuminate the first region and the second region a third light source that generates a third light; the third light energy simultaneously illuminates the first region and the third region; and the light control device controls the light intensity of the second light and the third light, respectively.
  • the light generating system further includes: a first type of light converting component; the first light forming a discrete first region by the first type of light converting component;
  • the light conversion assembly includes a first lens group, a beam shaping device, a microlens array group, or/and a dual beam phase conversion array group.
  • the light generating system further includes: a second type light conversion component; the first light forms a continuous first region through the second type light conversion component;
  • the light conversion assembly includes a second lens group, a polarizing device, a third lens group, a Gaussian beam shaper, a ring beam shaper, a beam splitter, or/and a phase type diffraction grating array.
  • the light generating system further includes: a third type light converting component; the first light forming a hybrid first region through the third type light converting component; An area includes a discrete first region and a continuous first region; the third type of light conversion component includes a fourth lens group, a polarizing device, a fifth lens group, a Gaussian beam shaper, a ring beam shaper, a beam splitter, Or / and phase type diffraction grating arrays.
  • the area of the second region and the third region is on the order of nanometers.
  • the light generating system further includes: a first optical path component; the second light simultaneously illuminates the first area and the second area by the first optical path component;
  • the first optical path assembly includes any one or a combination of a lens group, a shaping device, a polarizing device, a grating, and a beam splitter.
  • the third light source includes the second light source and a second optical path component; and the second optical path component divides the second light output by the second light source Light is used as the third light; the second optical path assembly includes any one or a combination of a lens group, a shaping device, a polarizing device, a grating, and a beam splitter.
  • the light generating system further includes: a third optical path component; the third light simultaneously illuminates the first area and the third area by the third optical path component;
  • the third optical path assembly includes any one or a combination of a lens group, a shaping device, a polarizing device, a grating, and a beam splitter.
  • the first light source comprises: a first Gaussian light source to generate first Gaussian light.
  • the first light source further includes: a first flat top unit that shapes the first Gaussian light into a first flat top light; or a first flat top light source to generate a first flat top Light.
  • the first light source further includes: a first array unit that shapes the first Gaussian light or the first flat top light into a first array light; or a first array light source, generates a first An array of light.
  • the second light source comprises: a second Gaussian light source to generate second Gaussian light.
  • the second light source further includes: a second flat top unit that shapes the second Gaussian light into a second flat top light; or a second flat top light source to generate a second flat top Light.
  • the second light source further includes: a second array unit, shaping the second Gaussian light or the second flat top light into a second array light; or a second array light source, generating the first Two arrays of light.
  • the third light source comprises: a third Gaussian light source to generate third Gaussian light.
  • the third light source further includes: a third flat top unit that shapes the third Gaussian light into a third flat top light; or a third flat top light source to generate a third flat top Light.
  • the third light source further includes: a third array unit, shaping the third Gaussian light or the third flat top light into a third array light; or a third array light source, generating the first Three arrays of light.
  • the light control device comprises: a spatial light modulator, controlling the switching of the second light or/and the third light to achieve the second light or/and the Control of the light intensity of the third light; or/and an optical power controller that controls the optical radiation power of the second light source to effect control of the light intensity of the second light; or/and controls the light of the third light source
  • the radiant power effects control of the light intensity of the third light; or/and controls the optical radiant power of the first source to effect control of the light intensity of the first light.
  • the light generating method and system of the present invention have the following beneficial effects:
  • the light generated by the light generating method and system of the present invention can not only achieve super-resolution, but the resolution can theoretically approach infinity, and the original light source used is the light output by the laser, and the cost is extremely low, and is not limited.
  • the diffraction limit of the light source has great application prospects in the field of lithography.
  • FIG. 1 is a schematic diagram showing an implementation process of a light generating method according to an embodiment of the present invention.
  • 2A-1 is a schematic diagram showing an implementation manner of a first area according to an embodiment of the present invention.
  • 2A-2 is a schematic diagram showing an implementation structure of a first type optical conversion component according to an embodiment of the invention.
  • FIG. 2B-1 is a schematic diagram showing another implementation manner of the first area according to the embodiment of the present invention.
  • 2B-2 is a schematic diagram showing an implementation structure of a second type optical conversion component according to an embodiment of the invention.
  • 2C-1 is a schematic diagram showing a third implementation manner of the first area according to the embodiment of the present invention.
  • 2C-2 is a schematic diagram showing an implementation structure of a third type optical conversion component according to an embodiment of the invention.
  • FIG. 3A is a schematic diagram showing an implementation structure of a light generating system according to an embodiment of the present invention.
  • FIG. 3B is a schematic diagram showing another implementation structure of a light generating system according to an embodiment of the present invention.
  • FIG. 3C is a schematic diagram showing a third implementation structure of the light generating system according to the embodiment of the present invention.
  • the existing exposure-based lithography technology uses the traditional optical principle to improve the resolution based on the Rayleigh formula, mainly using the immersion method to increase the numerical aperture and the shorter wavelength source, especially the shorter wavelength source. It plays a decisive role in improving resolution.
  • the manufacturing process of excimer light sources, electron beams and even extreme ultraviolet light sources is complicated, difficult, and extremely costly, so the direct super-resolution exposure of the lithography machine is very expensive, and the resolution is still limited by the diffraction limit of the light source. .
  • the invention provides a light generating method and system, wherein the generated light can not only achieve super-resolution, but the resolution can theoretically approach infinity, and the original light source used is the light output by the laser, the cost is extremely low, and Limited by the diffraction limit of the light source, it has great application prospects in the field of lithography.
  • the present invention provides a light generating method, the method comprising:
  • S101 generate first light; the first light energy forms a first region, a second region, and a third region; the first light in the first region has a higher light intensity than the second region and the Light intensity of the third region;
  • the third light can simultaneously illuminate the first region and the third region;
  • the first light forms a discrete first region through a first type of light conversion component.
  • the first region is a region where the first light is irradiated to form a bright region
  • the discrete first region is a region formed by two or more discontinuous bright regions.
  • the first light is converted into annular array light by the first type light conversion component, and the annular display light can form a discrete first region (bright area) and a second area (dark area) Zone 1), a third zone (dark zone 2), a fourth zone (dark zone 3), a fifth zone (dark zone 4) and the like.
  • the first type of light conversion assembly includes: a first lens group 201, a beam shaping device 202, a beam expansion device 203, a microlens array group 204, and a dual beam phase conversion array group 205;
  • the first light includes an annular light initial input beam hv1 and a solid Gaussian initial input beam hv2.
  • Hv1 and hv2 are merged by the beam splitter and then collected by the first lens group 201 into the beam shaping device 202 to realize concentricity of hv1 and hv2 to form a concentric beam; the beam expanding device 203 can usually be realized by using a circularly-preserving optical fiber.
  • the beam expanding device 203 converts the solid Gaussian beam in the concentric beam into a flat top beam of average energy distribution, and the flattened concentric beam is converted into an array-type concentric beam by the microlens array set 204.
  • the two-beam phase-conversion array group 205 corresponds to the microlens array group 204, and each bundle of concentric beams output from the microlens array group 204 enters a corresponding phase conversion unit to realize that hv1 is converted from an initial beam to a ring beam, and hv2 remains solid.
  • the beam thereby achieving an array-type dual beam, ie annular array light.
  • the ring-shaped initial input beam is also a Gaussian beam.
  • the array double beam enters the spatial light modulator 206 corresponding to the pixel unit, and the device can control the on and off of the double beam of each pixel at a high speed by a computer program, thereby modulating each pair of double beams and controlling the writing of the pattern.
  • the dual beam array from the spatial light modulator 206 is focused by the lens group 207, and then the image is reduced by the miniature image lens group 208, and finally high speed parallel double beam lithography is realized on the surface of the lithographic material 209.
  • the lithography material realizes displacement step control under the control of the precision displacement platform 2010.
  • the first light forms a continuous first region through a second type of light conversion component.
  • the first region is a region where the first light is irradiated to form a bright region
  • the continuous first region is a region formed by continuous bright regions.
  • the first light is converted into grating light by the second type light conversion component, and the grating light may form a continuous first region (bright area) and a second area (dark area 1).
  • third area (dark area 2), fourth area (dark area 3), fifth area (dark area 4), sixth area (dark area 5), seventh area (dark area 6), eighth area (dark area 7), ninth area (dark area 8), tenth area (dark area 9) and other dark areas.
  • the second type of light conversion assembly includes: a second lens group 211, a polarizing device 212, a third lens group 213, a Gaussian beam shaper 214, a ring beam shaper 215, a beam splitter 216, a phase-type diffraction grating array 217; and the first light includes an annular light initial input beam hv1 and a solid Gaussian light initial input beam hv2.
  • Hv1 first passes through the second lens group 211 and enters the polarizing device 212, thereby producing the desired polarized light beam.
  • the solid Gaussian beam hv2 passes through the third lens group 213, and is converted into a flat-top beam by the Gaussian beam shaper 214.
  • the polarized beam converted from Hv1 is also converted into a hollow flat-top beam shape by the annular beam shaper 215.
  • the shaped two beams are merged by the beam splitter 216, and then passed through the phase type diffraction grating array 217 to convert the polarized hv1 into an array type vortex light to form a ring array light.
  • the annular array light enters the spatial light modulator 218 corresponding to the pixel unit, and the device can control the on and off of each pixel double beam at a high speed by a computer program, thereby modulating each double beam and controlling the writing of the pattern.
  • the two-beam array from the spatial light modulator 218 is focused by the lens group 219, and then the image is reduced by the miniature image lens group 2110, and finally high-speed parallel double-beam lithography is realized on the surface of the lithographic material 2111.
  • the lithography material realizes displacement step control under the control of the precision displacement platform 2112.
  • the first light is generated by a third type of light conversion component and can form a hybrid first region; the hybrid first region includes a discrete first region and a continuous type An area.
  • the first light is a grating array light, and the grating array light may form a mixed first region (bright region) and a second region (dark region 1), and the third region (dark region) 2), fourth area (dark area 3), fifth area (dark area 4), sixth area (dark area 5), seventh area (dark area 6), eighth area (dark area 7), ninth Multiple dark areas such as the area (dark area 8) and the tenth area (dark area 9).
  • the hybrid first region is a combination of the discrete first region and the continuous first region arranged in an arbitrary manner.
  • the third type of light conversion assembly includes: a fourth lens group 221, a polarizing device 222, a fifth lens group 223, a Gaussian beam shaper 224, a ring beam shaper 225, a beam splitter 226, a phase type diffraction grating array 227; and the first light includes an annular light initial input beam hv1 and a solid Gaussian light initial input beam hv2.
  • Hv1 first passes through the fourth lens group 221 and enters the polarizing device 222, thereby generating the desired polarized light beam.
  • the solid Gaussian beam hv2 passes through the fifth lens group 223 and is converted into a flat-top beam by the Gaussian beam shaper 224.
  • the polarized beam converted by Hv1 is also converted into a hollow flat-top beam shape by the annular beam shaper 225.
  • the shaped two beams are merged by the beam splitter 226, and then passed through the phase type diffraction grating array 227 to convert the polarized hv1 into an array type vortex light to form a ring array light.
  • the annular array light enters the spatial light modulator 228 corresponding to the pixel unit, and the device can control the on and off of each pixel double beam at a high speed by a computer program, thereby modulating each double beam and controlling the writing of the pattern.
  • the two-beam array from the spatial light modulator 228 is focused by the lens group 229, and then the image is reduced by the miniature image lens group 2210, and finally high-speed parallel two-beam lithography is realized on the surface of the lithographic material 2211.
  • the lithography material realizes displacement step control under the control of the precision displacement platform 2212.
  • the area of the second region or/and the third region is on the order of nanometers.
  • the region of the second region illuminated by the second light is a first super-resolution region; and the first super-resolution region has an inner diameter ranging from 0 to 100 nanometers. That is, the region where the second region overlaps with the region irradiated by the second light is the first super-resolution region. Since the second region itself is already on the nanometer level, the smaller the region where the region irradiated by the second light and the second region overlap, the smaller the size of the first super-resolution region can be, and can be infinitely small. Therefore, the inner diameter of the first super-resolution region may preferably range from 0 to 10 nm, and even more preferably from 0 to 2.4 nm or less.
  • the region of the third region illuminated by the third light is a second super-resolution region; and the second super-resolution region has an inner diameter ranging from 0 to 100 nanometers. That is, the region where the third region overlaps with the region irradiated by the third light is the second super-resolution region. Since the third region itself is already on the nanometer level, the smaller the region where the region irradiated by the third light and the third region overlap, the smaller the size of the second super-resolution region can be, and can be infinitely small. Therefore, the inner diameter of the second super-resolution region may preferably range from 0 to 10 nm, and even preferably from 0 to 2.4 nm.
  • control of the light intensity of the second light or/and the third light may be achieved by controlling the switching of the second light or/and the third light; or And controlling the light intensity of the second light by controlling the optical radiation power of the light source of the second light; or/and by implementing the optical radiation power of the light source controlling the third light Control of the light intensity of the third light; or/and control of the light intensity of the first light by controlling the optical radiation power of the light source of the first light.
  • the second light and the third light are from the same light source, and the light radiation power of the light source of the second light may be controlled or the light of the second light may be controlled. On-off control of the light intensity of the second light and the light intensity of the third light is achieved. Or the second light and the third light are from different light sources, and the second light source and the third light source need to be separately controlled to realize control of the second light and the third light.
  • the protection scope of the light generating method according to the present invention is not limited to the step execution sequence enumerated in the embodiment, and the steps of the prior art steps increasing and decreasing and step replacement according to the principles of the present invention are all included in the present invention. Within the scope of protection.
  • the present invention also provides a light generating system, which can implement the light generating method of the present invention, but the implementing device of the light generating method according to the present invention includes, but is not limited to, the light generating system enumerated in this embodiment. Structures of the prior art, which are made in accordance with the principles of the present invention, are all included in the scope of the present invention.
  • the light generating system 300 includes a first light source 301, a second light source 302, a third light source 303, and a light control device 304.
  • the first light source 301 generates first light; the first light energy forms a first region, a second region and a third region; and the light intensity of the first light in the first region is higher than that in the second region Light intensity of the area and the third area;
  • the second light source 302 generates a second light; the second light can simultaneously illuminate the first region and the second region;
  • the third light source 303 generates a third light; the third light can simultaneously illuminate the first region and the third region;
  • the light control device 304 controls the light intensities of the second light and the third light, respectively.
  • the light generating system 300 further includes: a first type light converting component 305; the first light is formed into a discrete type by the first type light converting component 305. a first region; the first region is a region where the first light is irradiated to form a bright region, and the discrete first region is a region formed by two or more discontinuous bright regions.
  • the first light is converted into annular array light by the first type light conversion component, and the annular display light can form a discrete first region (bright area) and a second area (dark area) Zone 1), a third zone (dark zone 2), a fourth zone (dark zone 3), a fifth zone (dark zone 4) and the like.
  • the first type of light conversion assembly includes: a first lens group 201, a beam shaping device 202, a beam expansion device 203, a microlens array group 204, and a dual beam phase conversion array group 205;
  • the first light includes an annular light initial input beam hv1 and a solid Gaussian initial input beam hv2.
  • Hv1 and hv2 are merged by the beam splitter and then collected by the first lens group 201 into the beam shaping device 202 to realize concentricity of hv1 and hv2 to form a concentric beam; the beam expanding device 203 can usually be realized by using a circularly-preserving optical fiber.
  • the beam expanding device 203 converts the solid Gaussian beam in the concentric beam into a flat top beam of average energy distribution, and the flattened concentric beam is converted into an array-type concentric beam by the microlens array set 204.
  • the two-beam phase-conversion array group 205 corresponds to the microlens array group 204, and each bundle of concentric beams output from the microlens array group 204 enters a corresponding phase conversion unit to realize that hv1 is converted from an initial beam to a ring beam, and hv2 remains solid.
  • the beam thereby achieving an array-type dual beam, ie annular array light.
  • the ring-shaped initial input beam is also a Gaussian beam.
  • the array double beam enters the spatial light modulator 206 corresponding to the pixel unit, and the device can control the on and off of the double beam of each pixel at a high speed by a computer program, thereby modulating each pair of double beams and controlling the writing of the pattern.
  • the dual beam array from the spatial light modulator 206 is focused by the lens group 207, and then the image is reduced by the miniature image lens group 208, and finally high speed parallel double beam lithography is realized on the surface of the lithographic material 209.
  • the lithography material realizes displacement step control under the control of the precision displacement platform 2010.
  • the light generating system 300 further includes: a second type light converting component 306; the first light is formed into a continuous type by the second type light converting component 306. a first region; the first region is a region where the first light is irradiated to form a bright region, and the continuous first region is a region formed by continuous bright regions.
  • the first light is converted into grating light by the second type light conversion component, and the grating light may form a continuous first region (bright area) and a second area (dark area 1).
  • third area (dark area 2), fourth area (dark area 3), fifth area (dark area 4), sixth area (dark area 5), seventh area (dark area 6), eighth area (dark area 7), ninth area (dark area 8), tenth area (dark area 9) and other dark areas.
  • the second type of light conversion assembly includes: a second lens group 211, a polarizing device 212, a third lens group 213, a Gaussian beam shaper 214, a ring beam shaper 215, a beam splitter 216, a phase-type diffraction grating array 217, a spatial light modulator 218, a lens group 219, a lens group 2110, a lithographic material 2111, a precision displacement device 2112; and the first light includes an annular light initial input beam hv1 and a solid Gaussian light initial input Beam hv2. Hv1 first passes through the second lens group 211 and enters the polarizing device 212, thereby producing the desired polarized light beam.
  • the solid Gaussian beam hv2 passes through the third lens group 213, and is converted into a flat-top beam by the Gaussian beam shaper 214.
  • the polarized beam converted from Hv1 is also converted into a hollow flat-top beam shape by the annular beam shaper 215.
  • the shaped two beams are merged by the beam splitter 216, and then passed through the phase type diffraction grating array 217 to convert the polarized hv1 into an array type vortex light to form a ring array light.
  • the annular array light enters the spatial light modulator 218 corresponding to the pixel unit, and the device can control the on and off of each pixel double beam at a high speed by a computer program, thereby modulating each double beam and controlling the writing of the pattern.
  • the two-beam array from the spatial light modulator 218 is focused by the lens group 219, and then the image is reduced by the miniature image lens group 2110, and finally high-speed parallel double-beam lithography is realized on the surface of the lithographic material 2111.
  • the lithography material realizes displacement step control under the control of the precision displacement platform 2112.
  • the light generating system 300 further includes: a third type light converting component 307; the first light is formed into a hybrid type by the third type light converting component 307. a first region; the hybrid first region includes a discrete first region and a continuous first region; the first region is a region where the first light is irradiated to form a bright region, and the continuous first region is continuous.
  • the area formed by the bright area, the discrete first area is the area formed by two or more discontinuous bright areas; the mixed first area is a continuous bright area and two or more discontinuous bright areas exist simultaneously The area formed.
  • the first light is a grating array light
  • the grating array light may form a mixed first region (bright region) and a second region (dark region 1), and the third region (dark region) 2), fourth area (dark area 3), fifth area (dark area 4), sixth area (dark area 5), seventh area (dark area 6), eighth area (dark area 7), ninth Multiple dark areas such as the area (dark area 8) and the tenth area (dark area 9).
  • the hybrid first region is a combination of the discrete first region and the continuous first region arranged in an arbitrary manner.
  • the third type of light conversion assembly includes: a fourth lens group 221, a polarizing device 222, a fifth lens group 223, a Gaussian beam shaper 224, a ring beam shaper 225, a beam splitter 226, a phase-type diffraction grating array 227, a spatial light modulator 228, a lens group 229, a lens group 2210, a lithographic material 2211, a precision displacement device 2212; and the first light includes an annular light initial input beam hv1 and a solid Gaussian light initial input Beam hv2. Hv1 first passes through the fourth lens group 221 and enters the polarizing device 222, thereby generating the desired polarized light beam.
  • the solid Gaussian beam hv2 passes through the fifth lens group 223 and is converted into a flat-top beam by the Gaussian beam shaper 224.
  • the polarized beam converted by Hv1 is also converted into a hollow flat-top beam shape by the annular beam shaper 225.
  • the shaped two beams are merged by the beam splitter 226, and then passed through the phase type diffraction grating array 227 to convert the polarized hv1 into an array type vortex light to form a ring array light.
  • the annular array light enters the spatial light modulator 228 corresponding to the pixel unit, and the device can control the on and off of each pixel double beam at a high speed by a computer program, thereby modulating each double beam and controlling the writing of the pattern.
  • the two-beam array from the spatial light modulator 228 is focused by the lens group 229, and then the image is reduced by the miniature image lens group 2210, and finally high-speed parallel two-beam lithography is realized on the surface of the lithographic material 2211.
  • the lithography material realizes displacement step control under the control of the precision displacement platform 2212.
  • the area of the second region or/and the third region is on the order of nanometers.
  • the region of the second region illuminated by the second light is a first super-resolution region; and the first super-resolution region has an inner diameter ranging from 0 to 100 nanometers. That is, the region where the second region overlaps with the region irradiated by the second light is the first super-resolution region. Since the second region itself is already on the nanometer level, the smaller the region where the region irradiated by the second light and the second region overlap, the smaller the size of the first super-resolution region can be, and can be infinitely small. Therefore, the inner diameter of the first super-resolution region may preferably range from 0 to 10 nm, and even more preferably from 0 to 2.4 nm or less.
  • the region of the third region illuminated by the third light is a second super-resolution region; and the second super-resolution region has an inner diameter ranging from 0 to 100 nanometers. That is, the region where the third region overlaps with the region irradiated by the third light is the second super-resolution region. Since the third region itself is already on the nanometer level, the smaller the region where the region irradiated by the third light and the third region overlap, the smaller the size of the second super-resolution region can be, and can be infinitely small. Therefore, the inner diameter of the second super-resolution region may preferably range from 0 to 10 nm, and even preferably from 0 to 2.4 nm.
  • the light generating system 300 further includes: a first optical path component 308; the second light simultaneously illuminates the first area through the first optical path component 308 And the second region; the first optical path assembly comprises any one or a combination of optical components such as a lens group, a shaping device, a polarizing device, a grating, a beam splitter, and the like.
  • the third light source 303 includes the second light source 302 and a second optical path component 309; the second optical path component 309 sets the second light source 302. Part of the outputted second light is used as the third light; the two optical path components include any one or a combination of optical components such as a lens group, a shaping device, a polarizing device, a grating, and a beam splitter. .
  • the light generating system 300 further includes: a third optical path component 310; the third light simultaneously illuminates the first area through the third optical path component 310 And the third region; the third optical path assembly comprises any one or a combination of optical components such as a lens group, a shaping device, a polarizing device, a grating, and a beam splitter.
  • the first light source 301 includes a first Gaussian light source 3011 that generates first Gaussian light.
  • the first light source 301 includes: a first Gaussian light source 3011, a first flat top unit 3012; the first Gaussian light source 3011 generates first Gaussian light; the first flat top unit 3012 shapes the first Gaussian light into a first flat top light.
  • the first light source 301 includes a first flat top light source 3013 that generates a first flat top light.
  • the first light source 301 includes: a first Gaussian light source 3011, a first array unit 3014; the first Gaussian light source 3011 generates first Gaussian light; the first array unit 3014 The first Gaussian light or the first flat top light is shaped into a first array of light.
  • the first light source 301 includes: a first Gaussian light source 3011, a first flat top unit 3012, and a first array unit 3014; the first Gaussian light source 3011 generates first Gaussian light; The first flat top unit 3012 shapes the first Gaussian light into a first flat top light; the first array unit 3014 shapes the first flat top light into a first array light.
  • the first light source 301 includes a first array light source 3015 that generates a first array of light.
  • the second light source 302 includes a second Gaussian light source 3021 that generates second Gaussian light.
  • the second light source 302 includes: a second Gaussian light source 3021, a second flat top unit 3022; the second Gaussian light source 3021 generates second Gaussian light; the second flat top unit 3022 shapes the second Gaussian light into a second flat top light.
  • the second light source 302 includes a second flat top light source 3023 that generates a second flat top light.
  • the second light source 302 includes: a second Gaussian light source 3021, a second array unit 3024; the second Gaussian light source 3021 generates second Gaussian light; the second array unit 3024 The second Gaussian light is shaped into a second array of light.
  • the second light source 302 includes: a second Gaussian light source 3021, a second flat top unit 3022, and a second array unit 3024; the second Gaussian light source 3021 generates second Gaussian light; The second flat top unit 3022 shapes the second Gaussian light into a second flat top light; the second array unit 3024 shapes the second flat top light into a second array light.
  • the second light source 302 includes a second array light source 3025 that generates a second array of light.
  • the third light source 303 includes a third Gaussian light source 3031 that generates third Gaussian light.
  • the third light source 303 includes: a third Gaussian light source 3031, a third flat top unit 3032; the third Gaussian light source 3031 generates third Gaussian light; the third flat top unit 3032 shapes the third Gaussian light into a third flat top light.
  • the third light source 303 includes a third flat top light source 3033 that generates a third flat top light.
  • the third light source 303 includes: a third Gaussian light source 3031, a third array unit 30334; the third Gaussian light source 3031 generates third Gaussian light; the third array unit 3034 The third Gaussian light or the third flat top light is shaped into a third array of light.
  • the third light source 303 includes: a third Gaussian light source 3031, a third array unit 30334; the third Gaussian light source 3031 generates third Gaussian light; the third array unit 3034 The third Gaussian light is shaped into a third array of light.
  • the third light source 303 includes: a third Gaussian light source 3031, a third flat top unit 3032, and a third array unit 30334; and the third Gaussian light source 3031 generates third Gaussian light;
  • the third flat top unit 3032 shapes the third Gaussian light into a third flat top light;
  • the third array unit 3034 shapes the third flat top light into a third array light.
  • the third light source 303 includes a third array light source 3035 that generates a third array of light.
  • the light control device 304 comprises: a spatial light modulator 3041, or/and an optical power controller 3042; the spatial light modulator 3041 controls the second light or/and the first The switching of the three lights enables control of the light intensity of the second light or/and the third light.
  • the optical power controller 3042 controls the optical radiation power of the second light source to achieve control of the light intensity of the second light; or/and controls the optical radiation power of the third light source to achieve the third light Control of the light intensity; or/and control of the optical radiation power of the first source to effect control of the light intensity of the first light.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

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Abstract

本发明提供一种光生成方法及系统，该方法包括：生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；生成第二光；所述第二光能同时照射第一区域和第二区域；生成第三光，所述第三光能同时照射第一区域和第三区域；分别控制所述第二光和所述第三光的光强度。本发明所述的光生成方法及系统生成的光不但可以实现超分辨，其分辨率理论上可以趋近无穷小，而且其采用的原始光源均为激光器输出的光，成本极低，且不受限于光源的衍射极限，在光刻领域具有极大的应用前景。

Description

光生成方法及系统 技术领域
本发明属于光学技术领域，涉及一种用于光刻的光，特别是涉及一种光生成方法及系统。
背景技术
光刻技术是当前工业精密加工中重要的技术环节，特别是在微纳加工领域，如集成电路芯片、MEMS器件、光集成技术、精密光学等领域具有广泛应用。当前主流的高精密光刻制造工艺主要有光学投影微缩光刻、电子束直写、离子束加工、激光干涉光刻等。
根据瑞利(Rayleigh)分辨率公式：R＝k 1λ/NA可以知道，分辨率的提高可通过增大光刻物镜的数值孔径NA和缩短曝光波长λ来实现。目前光刻机技术增加数值孔径的办法是采用浸没式光刻技术，而短波长曝光目前最主流成熟的技术是采用波长193nm的ArF光源，即使采用浸没式提升NA的手段，最小分辨率也无法突破45nm。
现有的基于曝光式的光刻技术是采用传统光学原理基于瑞利公式在分辨率上的改进提升，主要是采用浸没法提高数值孔径以及采用更短波长的光源，特别是更短波长的光源对提升分辨率起决定性作用，但准分子光源、电子束甚至极紫外光源制造复杂、难度大、而且成本极高，因此直接超分辨率曝光的光刻机成本十分昂贵，而且分辨率仍然受限于光源的衍射极限。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种光生成方法及系统，用于解决现有光源的瑞利分辨率受光源的衍射极限影响，难以突破。
为实现上述目的及其他相关目的，本发明提供一种光生成方法，包括：生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；生成第二光；所述第二光能同时照射第一区域和第二区域；生成第三光，所述第三光能同时照射第一区域和第三区域；分别控制所述第二光和所述第三光的光强度。
于本发明的一实施例中，所述第一光通过一第一型光转换组件形成离散型第一区域。
于本发明的一实施例中，所述第一光通过一第二型光转换组件形成连续型第一区域。
于本发明的一实施例中，所述第一光通过一第三型光转换组件形成混合型第一区域；所 述混合型第一区域包括离散型第一区域和连续型第一区域。
于本发明的一实施例中，所述第二区域和所述第三区域的面积为纳米级别。
于本发明的一实施例中，所述第二区域中被所述第二光照射的区域为第一超分辨区域；所述第一超分辨区域的内径范围为0～100纳米。
于本发明的一实施例中，所述第一超分辨区域的内径范围为0～10纳米。
于本发明的一实施例中，所述第三区域中被所述第三光照射的区域为第二超分辨区域；所述第二超分辨区域的内径范围为0～100纳米。
于本发明的一实施例中，所述第二超分辨区域的内径范围为0～10纳米。
于本发明的一实施例中，还包括：通过控制所述第二光或/和所述第三光的通断实现对所述第二光或/和所述第三光的光强度的控制；或/和通过控制所述第二光的光源的光辐射功率实现对所述第二光的光强度的控制；或/和通过控制所述第三光的光源的光辐射功率实现对所述第三光的光强度的控制；或/和通过控制所述第一光的光源的光辐射功率实现对所述第一光的光强度的控制。
于本发明的一实施例中，所述第二光和所述第三光来自于同一光源；或所述第二光和所述第三光来自于不同的光源。
本发明还提供一种光生成系统，所述光生成系统包括：第一光源，生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；第二光源，生成第二光；所述第二光能同时照射第一区域和第二区域；第三光源，生成第三光；所述第三光能同时照射第一区域和第三区域；光控装置，分别控制所述第二光和所述第三光的光强度。
于本发明的一实施例中，所述光生成系统还包括：第一型光转换组件；所述第一光通过所述第一型光转换组件形成离散型第一区域；所述第一型光转换组件包括第一透镜组，光束整形装置，微透镜阵列组，或/和双光束相位转换阵列组。
于本发明的一实施例中，所述光生成系统还包括：第二型光转换组件；所述第一光通过所述第二型光转换组件形成连续型第一区域；所述第二型光转换组件包括第二透镜组，偏振装置，第三透镜组，高斯光束整形器，环形光束整形器，分光镜，或/和相位型衍射光栅阵列。
于本发明的一实施例中，所述光生成系统还包括：第三型光转换组件；所述第一光通过所述第三型光转换组件形成混合型第一区域；所述混合型第一区域包括离散型第一区域和连续型第一区域；所述第三型光转换组件包括第四透镜组，偏振装置，第五透镜组，高斯光束整形器，环形光束整形器，分光镜，或/和相位型衍射光栅阵列。
于本发明的一实施例中，所述第二区域和所述第三区域的面积为纳米级别。
于本发明的一实施例中，所述光生成系统还包括：第一光路组件；所述第二光通过所述第一光路组件同时照射所述第一区域和所述第二区域；所述第一光路组件包括透镜组、整形装置、偏振装置、光栅、分光器中任一种或几种的组合。
于本发明的一实施例中，所述第三光源包括所述第二光源和一第二光路组件；所述第二光路组件将所述第二光源输出的所述第二光中分出部分光作为所述第三光；所述第二光路组件包括透镜组、整形装置、偏振装置、光栅、分光器中任一种或几种的组合。
于本发明的一实施例中，所述光生成系统还包括：第三光路组件；所述第三光通过所述第三光路组件同时照射所述第一区域和所述第三区域；所述第三光路组件包括透镜组、整形装置、偏振装置、光栅、分光器中任一种或几种的组合。
于本发明的一实施例中，所述第一光源包括：第一高斯光源，生成第一高斯光。
于本发明的一实施例中，所述第一光源还包括：第一平顶单元，将所述第一高斯光整形为第一平顶光；或第一平顶光源，生成第一平顶光。
于本发明的一实施例中，所述第一光源还包括：第一阵列单元，将所述第一高斯光或第一平顶光整形为第一阵列光；或第一阵列光源，生成第一阵列光。
于本发明的一实施例中，所述第二光源包括：第二高斯光源，生成第二高斯光。
于本发明的一实施例中，所述第二光源还包括：第二平顶单元，将所述第二高斯光整形为第二平顶光；或第二平顶光源，生成第二平顶光。
于本发明的一实施例中，所述第二光源还包括：第二阵列单元，将所述第二高斯光或第二平顶光整形为第二阵列光；或第二阵列光源，生成第二阵列光。
于本发明的一实施例中，所述第三光源包括：第三高斯光源，生成第三高斯光。
于本发明的一实施例中，所述第三光源还包括：第三平顶单元，将所述第三高斯光整形为第三平顶光；或第三平顶光源，生成第三平顶光。
于本发明的一实施例中，所述第三光源还包括：第三阵列单元，将所述第三高斯光或第三平顶光整形为第三阵列光；或第三阵列光源，生成第三阵列光。
于本发明的一实施例中，所述光控制装置包括：空间光调制器，控制所述第二光或/和所述第三光的通断实现对所述第二光或/和所述第三光的光强度的控制；或/和光功率控制器，控制所述第二光源的光辐射功率实现对所述第二光的光强度的控制；或/和控制所述第三光源的光辐射功率实现对所述第三光的光强度的控制；或/和控制所述第一光源的光辐射功率实现对所述第一光的光强度的控制。
如上所述，本发明所述的光生成方法及系统，具有以下有益效果：
本发明所述的光生成方法及系统生成的光不但可以实现超分辨，其分辨率理论上可以趋近无穷小，而且其采用的原始光源均为激光器输出的光，成本极低，且不受限于光源的衍射极限，在光刻领域具有极大的应用前景。
附图说明
图1显示为本发明实施例所述的光生成方法的一种实现流程示意图。
图2A-1显示为本发明实施例所述的第一区域的一种实现方式示意图。
图2A-2显示为本发明实施例所述的第一型光转换组件的一种实现结构示意图。
图2B-1显示为本发明实施例所述的第一区域的另一种实现方式示意图。
图2B-2显示为本发明实施例所述的第二型光转换组件的一种实现结构示意图。
图2C-1显示为本发明实施例所述的第一区域的第三种实现方式示意图。
图2C-2显示为本发明实施例所述的第三型光转换组件的一种实现结构示意图。
图3A显示为本发明实施例所述的光生成系统的一种实现结构示意图。
图3B显示为本发明实施例所述的光生成系统的另一种实现结构示意图。
图3C显示为本发明实施例所述的光生成系统的第三种实现结构示意图。
元件标号说明
S101～S104       步骤
201              第一透镜组
202              光束整形装置
203              光束扩束装置
204              微透镜阵列组
205              双光束相位转换阵列组
206              空间光调制器
207              透镜组
208              透镜组
209              光刻材料
2010             精密位移平台
211              第二透镜组
212              偏振装置
213              第三透镜组
214              高斯光束整形器
215              环形光束整形器
216              分光镜
217              相位型衍射光栅阵列
218              空间光调制器
219              透镜组
2110             透镜组
2111             光刻材料
2112             精密位移平台
221              第四透镜组
222              偏振装置
223              第五透镜组
224              高斯光束整形器
225              环形光束整形器
226              分光镜
227              相位型衍射光栅阵列
228              空间光调制器
229              透镜组
2210             透镜组
2211             光刻材料
2212             精密位移平台
300              光生成系统
301              第一光源
3011             第一高斯光源
3012             第一平顶单元
3013             第一平顶光源
3014             第一阵列单元
3015             第一阵列光源
302              第二光源
3021             第二高斯光源
3022             第二平顶单元
3023             第二平顶光源
3024             第二阵列单元
3025             第二阵列光源
303              第三光源
3031             第三高斯光源
3032             第三平顶单元
3033             第三平顶光源
3034             第三阵列单元
3035             第三阵列光源
304              光控装置
3041             空间光调制器
3042             光功率控制器
305              第一型光转换组件
306              第二型光转换组件
307              第三型光转换组件
308              第一光路组件
309              第二光路组件
310              第三光路组件
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。需说明的是，在不冲突的情况下，以下实施例及实施例中的特征可以相互组合。
需要说明的是，以下实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复 杂。
现有的基于曝光式的光刻技术是采用传统光学原理基于瑞利公式在分辨率上进行改进提升，主要是采用浸没法提高数值孔径以及采用更短波长的光源，特别是更短波长的光源对提升分辨率起决定性作用。但是，准分子光源、电子束甚至极紫外光源的制造过程复杂、难度大、而且成本极高，因此直接超分辨率曝光的光刻机成本十分昂贵，而且分辨率仍然受限于光源的衍射极限。
本发明提供一种光生成方法及系统，其生成的光不但可以实现超分辨，其分辨率理论上可以趋近无穷小，而且其采用的原始光源均为激光器输出的光，成本极低，且不受限于光源的衍射极限，在光刻领域具有极大的应用前景。
请参阅图1，本发明提供一种光生成方法，该方法包括：
S101，生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；
S102，生成第二光；所述第二光能同时照射第一区域和第二区域；
S103，生成第三光，所述第三光能同时照射第一区域和第三区域；
S104，分别控制所述第二光和所述第三光的光强度。
在本发明的一实施例中，所述第一光通过一第一型光转换组件形成离散型第一区域。第一区域为所述第一光照射形成亮区的区域，所述离散型第一区域即为2个或以上不连续的亮区形成的区域。参见图2A-1所示，所述第一光通过所述第一型光转换组件转为环形阵列光，所述环形陈列光可以形成离散型第一区域(亮区)以及第二区域(暗区1)，第三区域(暗区2)，第四区域(暗区3)，第五区域(暗区4)等多个暗区。
参见图2A-2所示，所述第一型光转换组件包括：第一透镜组201，光束整形装置202，光束扩束装置203，微透镜阵列组204，双光束相位转换阵列组205；且所述第一光包括环形光初始输入光束hv1和实心高斯光初始输入光束hv2。hv1和hv2通过分光镜汇合后经过第一透镜组201聚集进入光束整形装置202实现hv1与hv2同心，形成同心光束；光束扩束装置203通常可以采用保圆偏光纤实现。光束扩束装置203将同心光束中的实心高斯光束转换为能量分布平均的平顶光束，平顶化后的同心光束经微透镜阵列组204转换为阵列型的同心光束。双光束相位转换阵列组205与微透镜阵列组204相对应，每一束从微透镜阵列组204输出的同心光束进入对应的相位转换单位实现hv1由初始光束转换为环形光束，而hv2仍然保持实心光束，从而实现阵列型双光束，即环形阵列光。环形光初始输入光束也是一种高斯光束。阵列双光束进入像素单元对应的空间光调制器206，此装置可以通过计算机程序高速控 制每个像素双光束的通断，从而可以调制每束双光束并控制图形的写入。从空间光调制器206出来的双光束阵列通过透镜组207聚焦，再通过微缩图像透镜组208实现图像的微缩，最终在光刻材料209表面实现高速并行双光束光刻。光刻材料在精密位移平台2010控制下实现位移步进控制。
在本发明的一实施例中，所述第一光通过一第二型光转换组件形成连续型第一区域。第一区域为所述第一光照射形成亮区的区域，所述连续型第一区域即为连续的亮区形成的区域。参见图2B-1所示，所述第一光通过所述第二型光转换组件转换为光栅光，所述光栅光可以形成连续型第一区域(亮区)以及第二区域(暗区1)，第三区域(暗区2)，第四区域(暗区3)，第五区域(暗区4)，第六区域(暗区5)，第七区域(暗区6)，第八区域(暗区7)，第九区域(暗区8)，第十区域(暗区9)等多个暗区。
参见图2B-2所示，所述第二型光转换组件包括：第二透镜组211，偏振装置212，第三透镜组213，高斯光束整形器214，环形光束整形器215，分光镜216，相位型衍射光栅阵列217；且所述第一光包括环形光初始输入光束hv1和实心高斯光初始输入光束hv2。Hv1首先通过第二透镜组211后进入偏振装置212，从而产生所需要的偏振光束。而实心高斯光束hv2通过第三透镜组213后，再通过高斯光束整形器214转换为平顶光束。Hv1转换而成的偏振光束也通过环形光束整形器215转换为中空平顶光束形态。整形后的两束光经过分光镜216汇合后，再经过相位型衍射光栅阵列217，将偏振的hv1转换为阵列型涡旋光，形成环形阵列光。环形阵列光进入像素单元对应的空间光调制器218，此装置可以通过计算机程序高速控制每个像素双光束的通断，从而可以调制每束双光束并控制图形的写入。从空间光调制器218出来的双光束阵列通过透镜组219聚焦，再通过微缩图像透镜组2110实现图像的微缩，最终在光刻材料2111表面实现高速并行双光束光刻。光刻材料在精密位移平台2112控制下实现位移步进控制。
在本发明的一实施例中，所述第一光通过一第三型光转换组件生成，且能形成混合型第一区域；所述混合型第一区域包括离散型第一区域和连续型第一区域。参见图2C-1所示，所述第一光为光栅阵列光，所述光栅阵列光可以形成混合型第一区域(亮区)以及第二区域(暗区1)，第三区域(暗区2)，第四区域(暗区3)，第五区域(暗区4)，第六区域(暗区5)，第七区域(暗区6)，第八区域(暗区7)，第九区域(暗区8)，第十区域(暗区9)等多个暗区。其中，所述混合型第一区域是离散型第一区域和连续型第一区域以任意方式排布的组合。
参见图2C-2所示，所述第三型光转换组件包括：第四透镜组221，偏振装置222，第五 透镜组223，高斯光束整形器224，环形光束整形器225，分光镜226，相位型衍射光栅阵列227；且所述第一光包括环形光初始输入光束hv1和实心高斯光初始输入光束hv2。Hv1首先通过第四透镜组221后进入偏振装置222，从而产生所需要的偏振光束。而实心高斯光束hv2通过第五透镜组223后，再通过高斯光束整形器224转换为平顶光束。Hv1转换而成的偏振光束也通过环形光束整形器225转换为中空平顶光束形态。整形后的两束光经过分光镜226汇合后，再经过相位型衍射光栅阵列227，将偏振的hv1转换为阵列型涡旋光，形成环形阵列光。环形阵列光进入像素单元对应的空间光调制器228，此装置可以通过计算机程序高速控制每个像素双光束的通断，从而可以调制每束双光束并控制图形的写入。从空间光调制器228出来的双光束阵列通过透镜组229聚焦，再通过微缩图像透镜组2210实现图像的微缩，最终在光刻材料2211表面实现高速并行双光束光刻。光刻材料在精密位移平台2212控制下实现位移步进控制。
在本发明的一实施例中，所述第二区域或/和所述第三区域的面积为纳米级别。
在本发明的一实施例中，所述第二区域中被所述第二光照射的区域为第一超分辨区域；所述第一超分辨区域的内径范围为0～100纳米。即所述第二区域与所述第二光照射的区域相重叠的区域为第一超分辨区域。由于第二区域本身已是纳米级别，只需第二光照射的区域与第二区域相重叠的区域越小，第一超分辨区域的尺寸就可以越小，可以趋近于无限小。故而，所述第一超分辨区域的内径范围可以优选为0～10纳米，甚至优选为0～2.4纳米或更小。
在本发明的一实施例中，所述第三区域中被所述第三光照射的区域为第二超分辨区域；所述第二超分辨区域的内径范围为0～100纳米。即所述第三区域与所述第三光照射的区域相重叠的区域为第二超分辨区域。由于第三区域本身已是纳米级别，只需第三光照射的区域与第三区域相重叠的区域越小，第二超分辨区域的尺寸就可以越小，可以趋近于无限小。故而，所述第二超分辨区域的内径范围可以优选为0～10纳米，甚至优选为0～2.4纳米。
在本发明的一实施例中，可以通过控制所述第二光或/和所述第三光的通断实现对所述第二光或/和所述第三光的光强度的控制；或/和可以通过控制所述第二光的光源的光辐射功率实现对所述第二光的光强度的控制；或/和可以通过控制所述第三光的光源的光辐射功率实现对所述第三光的光强度的控制；或/和可以通过控制所述第一光的光源的光辐射功率实现对所述第一光的光强度的控制。
在本发明的一实施例中，所述第二光和所述第三光来自于同一光源，则可以通过控制所述第二光的光源的光辐射功率或通过控制所述第二光的光通断实现对所述第二光的光强度以及第三光的光强度的控制。或所述第二光和所述第三光来自于不同的光源，则需要分别控制 第二光源和第三光源来实现对第二光和第三光的控制。
本发明所述的光生成方法的保护范围不限于本实施例列举的步骤执行顺序，凡是根据本发明的原理所做的现有技术的步骤增减、步骤替换所实现的方案都包括在本发明的保护范围内。
本发明还提供一种光生成系统，所述光生成系统可以实现本发明所述的光生成方法，但本发明所述的光生成方法的实现装置包括但不限于本实施例列举的光生成系统的结构，凡是根据本发明的原理所做的现有技术的结构变形和替换，都包括在本发明的保护范围内。
参见图3A所示，所述光生成系统300包括：第一光源301，第二光源302，第三光源303，光控装置304。
所述第一光源301生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；
所述第二光源302生成第二光；所述第二光能同时照射第一区域和第二区域；
所述第三光源303生成第三光；所述第三光能同时照射第一区域和第三区域；
所述光控装置304分别控制所述第二光和所述第三光的光强度。
在本发明的一实施例中，参见图3B所示，所述光生成系统300还包括：第一型光转换组件305；所述第一光通过所述第一型光转换组件305形成离散型第一区域；第一区域为所述第一光照射形成亮区的区域，所述离散型第一区域即为2个或以上不连续的亮区形成的区域。参见图2A-1所示，所述第一光通过所述第一型光转换组件转为环形阵列光，所述环形陈列光可以形成离散型第一区域(亮区)以及第二区域(暗区1)，第三区域(暗区2)，第四区域(暗区3)，第五区域(暗区4)等多个暗区。
参见图2A-2所示，所述第一型光转换组件包括：第一透镜组201，光束整形装置202，光束扩束装置203，微透镜阵列组204，双光束相位转换阵列组205；且所述第一光包括环形光初始输入光束hv1和实心高斯光初始输入光束hv2。hv1和hv2通过分光镜汇合后经过第一透镜组201聚集进入光束整形装置202实现hv1与hv2同心，形成同心光束；光束扩束装置203通常可以采用保圆偏光纤实现。光束扩束装置203将同心光束中的实心高斯光束转换为能量分布平均的平顶光束，平顶化后的同心光束经微透镜阵列组204转换为阵列型的同心光束。双光束相位转换阵列组205与微透镜阵列组204相对应，每一束从微透镜阵列组204输出的同心光束进入对应的相位转换单位实现hv1由初始光束转换为环形光束，而hv2仍然保持实心光束，从而实现阵列型双光束，即环形阵列光。环形光初始输入光束也是一种高斯光束。阵列双光束进入像素单元对应的空间光调制器206，此装置可以通过计算机程序高速控 制每个像素双光束的通断，从而可以调制每束双光束并控制图形的写入。从空间光调制器206出来的双光束阵列通过透镜组207聚焦，再通过微缩图像透镜组208实现图像的微缩，最终在光刻材料209表面实现高速并行双光束光刻。光刻材料在精密位移平台2010控制下实现位移步进控制。
在本发明的一实施例中，参见图3B所示，所述光生成系统300还包括：第二型光转换组件306；所述第一光通过所述第二型光转换组件306形成连续型第一区域；第一区域为所述第一光照射形成亮区的区域，所述连续型第一区域即为连续的亮区形成的区域。参见图2B-1所示，所述第一光通过所述第二型光转换组件转换为光栅光，所述光栅光可以形成连续型第一区域(亮区)以及第二区域(暗区1)，第三区域(暗区2)，第四区域(暗区3)，第五区域(暗区4)，第六区域(暗区5)，第七区域(暗区6)，第八区域(暗区7)，第九区域(暗区8)，第十区域(暗区9)等多个暗区。
参见图2B-2所示，所述第二型光转换组件包括：第二透镜组211，偏振装置212，第三透镜组213，高斯光束整形器214，环形光束整形器215，分光镜216，相位型衍射光栅阵列217，空间光调制器218，透镜组219，透镜组2110，光刻材料2111，精密位移装置2112；且所述第一光包括环形光初始输入光束hv1和实心高斯光初始输入光束hv2。Hv1首先通过第二透镜组211后进入偏振装置212，从而产生所需要的偏振光束。而实心高斯光束hv2通过第三透镜组213后，再通过高斯光束整形器214转换为平顶光束。Hv1转换而成的偏振光束也通过环形光束整形器215转换为中空平顶光束形态。整形后的两束光经过分光镜216汇合后，再经过相位型衍射光栅阵列217，将偏振的hv1转换为阵列型涡旋光，形成环形阵列光。环形阵列光进入像素单元对应的空间光调制器218，此装置可以通过计算机程序高速控制每个像素双光束的通断，从而可以调制每束双光束并控制图形的写入。从空间光调制器218出来的双光束阵列通过透镜组219聚焦，再通过微缩图像透镜组2110实现图像的微缩，最终在光刻材料2111表面实现高速并行双光束光刻。光刻材料在精密位移平台2112控制下实现位移步进控制。
在本发明的一实施例中，参见图3B所示，所述光生成系统300还包括：第三型光转换组件307；所述第一光通过所述第三型光转换组件307形成混合型第一区域；所述混合型第一区域包括离散型第一区域和连续型第一区域；第一区域为所述第一光照射形成亮区的区域，所述连续型第一区域即为连续的亮区形成的区域，离散型第一区域即为2个或以上不连续的亮区形成的区域；混合型第一区域即为连续的亮区和2个或以上不连续的亮区同时存在形成的区域。参见图2C-1所示，所述第一光为光栅阵列光，所述光栅阵列光可以形成混合型第一 区域(亮区)以及第二区域(暗区1)，第三区域(暗区2)，第四区域(暗区3)，第五区域(暗区4)，第六区域(暗区5)，第七区域(暗区6)，第八区域(暗区7)，第九区域(暗区8)，第十区域(暗区9)等多个暗区。其中，所述混合型第一区域是离散型第一区域和连续型第一区域以任意方式排布的组合。
参见图2C-2所示，所述第三型光转换组件包括：第四透镜组221，偏振装置222，第五透镜组223，高斯光束整形器224，环形光束整形器225，分光镜226，相位型衍射光栅阵列227，空间光调制器228，透镜组229，透镜组2210，光刻材料2211，精密位移装置2212；且所述第一光包括环形光初始输入光束hv1和实心高斯光初始输入光束hv2。Hv1首先通过第四透镜组221后进入偏振装置222，从而产生所需要的偏振光束。而实心高斯光束hv2通过第五透镜组223后，再通过高斯光束整形器224转换为平顶光束。Hv1转换而成的偏振光束也通过环形光束整形器225转换为中空平顶光束形态。整形后的两束光经过分光镜226汇合后，再经过相位型衍射光栅阵列227，将偏振的hv1转换为阵列型涡旋光，形成环形阵列光。环形阵列光进入像素单元对应的空间光调制器228，此装置可以通过计算机程序高速控制每个像素双光束的通断，从而可以调制每束双光束并控制图形的写入。从空间光调制器228出来的双光束阵列通过透镜组229聚焦，再通过微缩图像透镜组2210实现图像的微缩，最终在光刻材料2211表面实现高速并行双光束光刻。光刻材料在精密位移平台2212控制下实现位移步进控制。
在本发明的一实施例中，所述第二区域或/和所述第三区域的面积为纳米级别。
在本发明的一实施例中，所述第二区域中被所述第二光照射的区域为第一超分辨区域；所述第一超分辨区域的内径范围为0～100纳米。即所述第二区域与所述第二光照射的区域相重叠的区域为第一超分辨区域。由于第二区域本身已是纳米级别，只需第二光照射的区域与第二区域相重叠的区域越小，第一超分辨区域的尺寸就可以越小，可以趋近于无限小。故而，所述第一超分辨区域的内径范围可以优选为0～10纳米，甚至优选为0～2.4纳米或更小。
在本发明的一实施例中，所述第三区域中被所述第三光照射的区域为第二超分辨区域；所述第二超分辨区域的内径范围为0～100纳米。即所述第三区域与所述第三光照射的区域相重叠的区域为第二超分辨区域。由于第三区域本身已是纳米级别，只需第三光照射的区域与第三区域相重叠的区域越小，第二超分辨区域的尺寸就可以越小，可以趋近于无限小。故而，所述第二超分辨区域的内径范围可以优选为0～10纳米，甚至优选为0～2.4纳米。
在本发明的一实施例中，参见图3C所示，所述光生成系统300还包括：第一光路组件308；所述第二光通过所述第一光路组件308同时照射所述第一区域和所述第二区域；所述第 一光路组件包括透镜组、整形装置、偏振装置、光栅、分光器等光学器件中任一种或几种的组合。
在本发明的一实施例中，参见图3C所示，所述第三光源303包括所述第二光源302和一第二光路组件309；所述第二光路组件309将所述第二光源302输出的所述第二光中分出部分光作为所述第三光；所述二光路组件包括透镜组、整形装置、偏振装置、光栅、分光器等光学器件中任一种或几种的组合。
在本发明的一实施例中，参见图3C所示，所述光生成系统300还包括：第三光路组件310；所述第三光通过所述第三光路组件310同时照射所述第一区域和所述第三区域；所述第三光路组件包括透镜组、整形装置、偏振装置、光栅、分光器等光学器件中任一种或几种的组合。
在本发明的一实施例中，所述第一光源301包括：第一高斯光源3011，生成第一高斯光。
在本发明的一实施例中，所述第一光源301包括：第一高斯光源3011，第一平顶单元3012；所述第一高斯光源3011生成第一高斯光；所述第一平顶单元3012将所述第一高斯光整形为第一平顶光。
在本发明的一实施例中，所述第一光源301包括：第一平顶光源3013，生成第一平顶光。
在本发明的一实施例中，所述第一光源301包括：第一高斯光源3011，第一阵列单元3014；所述第一高斯光源3011生成第一高斯光；所述第一阵列单元3014将所述第一高斯光或第一平顶光整形为第一阵列光。
在本发明的一实施例中，所述第一光源301包括：第一高斯光源3011，第一平顶单元3012，第一阵列单元3014；所述第一高斯光源3011生成第一高斯光；所述第一平顶单元3012将所述第一高斯光整形为第一平顶光；所述第一阵列单元3014将所述第一平顶光整形为第一阵列光。
在本发明的一实施例中，所述第一光源301包括：第一阵列光源3015，生成第一阵列光。
在本发明的一实施例中，所述第二光源302包括：第二高斯光源3021，生成第二高斯光。
在本发明的一实施例中，所述第二光源302包括：第二高斯光源3021，第二平顶单元3022；所述第二高斯光源3021生成第二高斯光；所述第二平顶单元3022将所述第二高斯光整形为第二平顶光。
在本发明的一实施例中，所述第二光源302包括：第二平顶光源3023，生成第二平顶光。
在本发明的一实施例中，所述第二光源302包括：第二高斯光源3021，第二阵列单元3024；所述第二高斯光源3021生成第二高斯光；所述第二阵列单元3024将所述第二高斯光整形为 第二阵列光。
在本发明的一实施例中，所述第二光源302包括：第二高斯光源3021，第二平顶单元3022，第二阵列单元3024；所述第二高斯光源3021生成第二高斯光；所述第二平顶单元3022将所述第二高斯光整形为第二平顶光；所述第二阵列单元3024将所述第二平顶光整形为第二阵列光。
在本发明的一实施例中，所述第二光源302包括：第二阵列光源3025，生成第二阵列光。
在本发明的一实施例中，所述第三光源303包括：第三高斯光源3031，生成第三高斯光。
在本发明的一实施例中，所述第三光源303包括：第三高斯光源3031，第三平顶单元3032；所述第三高斯光源3031生成第三高斯光；所述第三平顶单元3032将所述第三高斯光整形为第三平顶光。
在本发明的一实施例中，所述第三光源303包括：第三平顶光源3033，生成第三平顶光。
在本发明的一实施例中，所述第三光源303包括：第三高斯光源3031，第三阵列单元30334；所述第三高斯光源3031生成第三高斯光；所述第三阵列单元3034将所述第三高斯光或第三平顶光整形为第三阵列光。
在本发明的一实施例中，所述第三光源303包括：第三高斯光源3031，第三阵列单元30334；所述第三高斯光源3031生成第三高斯光；所述第三阵列单元3034将所述第三高斯光整形为第三阵列光。
在本发明的一实施例中，所述第三光源303包括：第三高斯光源3031，第三平顶单元3032，第三阵列单元30334；所述第三高斯光源3031生成第三高斯光；所述第三平顶单元3032将所述第三高斯光整形为第三平顶光；所述第三阵列单元3034将所述第三平顶光整形为第三阵列光。
在本发明的一实施例中，所述第三光源303包括：第三阵列光源3035，生成第三阵列光。
在本发明的一实施例中，所述光控制装置304包括：空间光调制器3041，或/和光功率控制器3042；所述空间光调制器3041控制所述第二光或/和所述第三光的通断实现对所述第二光或/和所述第三光的光强度的控制。
所述光功率控制器3042控制所述第二光源的光辐射功率实现对所述第二光的光强度的控制；或/和控制所述第三光源的光辐射功率实现对所述第三光的光强度的控制；或/和控制所述第一光源的光辐射功率实现对所述第一光的光强度的控制。
综上所述，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

  1. 一种光生成方法，其特征在于，包括：
    生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；
    生成第二光；所述第二光能同时照射第一区域和第二区域；
    生成第三光，所述第三光能同时照射第一区域和第三区域；
    分别控制所述第二光和所述第三光的光强度。
  2. 根据权利要求1所述的光生成方法，其特征在于：所述第一光通过一第一型光转换组件形成离散型第一区域。
  3. 根据权利要求1至2任一项所述的光生成方法，其特征在于：所述第一光通过一第二型光转换组件形成连续型第一区域。
  4. 根据权利要求1至3任一项所述的光生成方法，其特征在于：所述第一光通过一第三型光转换组件形成混合型第一区域；所述混合型第一区域包括离散型第一区域和连续型第一区域。
  5. 根据权利要求1至4任一项所述的光生成方法，其特征在于，还包括：
    通过控制所述第二光或/和所述第三光的通断实现对所述第二光或/和所述第三光的光强度的控制；或/和
    通过控制所述第二光的光源的光辐射功率实现对所述第二光的光强度的控制；或/和通过控制所述第三光的光源的光辐射功率实现对所述第三光的光强度的控制；或/和通过控制所述第一光的光源的光辐射功率实现对所述第一光的光强度的控制。
  6. 一种光生成系统，其特征在于，所述光生成系统包括：
    第一光源，生成第一光；所述第一光能形成第一区域，第二区域和第三区域；所述第一光在第一区域的光强度分别高于在所述第二区域和所述第三区域的光强度；
    第二光源，生成第二光；所述第二光能同时照射第一区域和第二区域；
    第三光源，生成第三光；所述第三光能同时照射第一区域和第三区域；
    光控装置，分别控制所述第二光和所述第三光的光强度。
  7. 根据权利要求6所述的光生成系统，其特征在于，所述光生成系统还包括：
    第一型光转换组件；所述第一光通过所述第一型光转换组件形成离散型第一区域；
    所述第一型光转换组件包括第一透镜组，光束整形装置，微透镜阵列组，或/和双光束相位转换阵列组。
  8. 根据权利要求6至7任一项所述的光生成系统，其特征在于，所述光生成系统还包括：
    第二型光转换组件；所述第一光通过所述第二型光转换组件形成连续型第一区域；
    所述第二型光转换组件包括第二透镜组，偏振装置，第三透镜组，高斯光束整形器，环形光束整形器，分光镜，或/和相位型衍射光栅阵列。
  9. 根据权利要求6至8任一项所述的光生成系统，其特征在于，所述光生成系统还包括：
    第三型光转换组件；所述第一光通过所述第三型光转换组件形成混合型第一区域；所述混合型第一区域包括离散型第一区域和连续型第一区域；
    所述第三型光转换组件包括第四透镜组，偏振装置，第五透镜组，高斯光束整形器，环形光束整形器，分光镜，或/和相位型衍射光栅阵列。
  10. 根据权利要求6至9任一所述的光生成系统，其特征在于，所述光控制装置包括：
    空间光调制器，控制所述第二光或/和所述第三光的通断实现对所述第二光或/和所述第三光的光强度的控制；或/和
    光功率控制器，控制所述第二光源的光辐射功率实现对所述第二光的光强度的控制；或/和控制所述第三光源的光辐射功率实现对所述第三光的光强度的控制；或/和控制所述第一光源的光辐射功率实现对所述第一光的光强度的控制。
PCT/CN2018/111323 2017-10-23 2018-10-23 光生成方法及系统 Ceased WO2019080819A1 (zh)

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