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WO2019044817A1 - Composition de résine photosensible négative, dispositif à semi-conducteur et dispositif électronique - Google Patents

Composition de résine photosensible négative, dispositif à semi-conducteur et dispositif électronique Download PDF

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Publication number
WO2019044817A1
WO2019044817A1 PCT/JP2018/031738 JP2018031738W WO2019044817A1 WO 2019044817 A1 WO2019044817 A1 WO 2019044817A1 JP 2018031738 W JP2018031738 W JP 2018031738W WO 2019044817 A1 WO2019044817 A1 WO 2019044817A1
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WO
WIPO (PCT)
Prior art keywords
photosensitive resin
resin composition
layer
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/031738
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English (en)
Japanese (ja)
Inventor
咲子 鈴木
雄大 山川
泰典 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to CN201880055884.7A priority Critical patent/CN111033379A/zh
Priority to KR1020207005419A priority patent/KR102135599B1/ko
Priority to KR1020207020144A priority patent/KR20200087876A/ko
Priority to JP2019522344A priority patent/JP6631752B2/ja
Publication of WO2019044817A1 publication Critical patent/WO2019044817A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H10P14/60—

Definitions

  • the present invention relates to a negative photosensitive resin composition, a semiconductor device and an electronic device.
  • a resin film made of a resin material is used for applications such as a protective film, an interlayer insulating film, and a planarization film. Further, depending on the mounting method of the semiconductor element, thickening of these resin films is required. However, when the resin film is thickened, the warpage of the semiconductor chip becomes remarkable.
  • Patent Document 1 discloses a photosensitive resin composition which is excellent in light transmittance and can suppress warpage of a semiconductor chip by optimizing the molecular structure and reducing the residual stress.
  • the photosensitive resin composition is also used for the purpose of forming an insulating portion for insulating the wiring by embedding the wiring in a resin film formed of the photosensitive resin composition.
  • An object of the present invention is to provide a photosensitive resin composition capable of forming a resin film having good adhesion to inorganic materials and metal materials, a semiconductor device provided with the resin film, and an electronic device provided with the semiconductor device. It is in.
  • Thermosetting resin A photopolymerization initiator, A coupling agent containing an acid anhydride as a functional group,
  • the negative photosensitive resin composition characterized by including.
  • thermosetting resin contains a solid component at normal temperature.
  • thermosetting resin contains a polyfunctional epoxy resin.
  • a semiconductor chip A resin film provided on the semiconductor chip, the resin film containing a cured product of the negative photosensitive resin composition according to any one of the above (1) to (8).
  • a semiconductor device comprising:
  • a negative photosensitive resin composition capable of forming a resin film having good adhesion to inorganic materials and metal materials is obtained.
  • a semiconductor device provided with the resin film can be obtained. Further, according to the present invention, an electronic device provided with the above semiconductor device can be obtained.
  • FIG. 1 is a longitudinal sectional view showing a first embodiment of the semiconductor device of the present invention.
  • FIG. 2 is a partially enlarged view of a region surrounded by a dashed line in FIG.
  • FIG. 3 is a diagram showing an example of a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 4 is a diagram showing an example of a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 5 is a longitudinal sectional view showing a second embodiment of the semiconductor device of the present invention.
  • FIG. 6 is a partially enlarged view of a region surrounded by a dashed line in FIG.
  • FIG. 7 is a process diagram showing a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 8 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 9 is a diagram for illustrating a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 10 is a diagram for illustrating a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 1 is a longitudinal sectional view showing a first embodiment of the semiconductor device of the present invention.
  • FIG. 2 is a partially enlarged view of a region surrounded by a dashed line in FIG.
  • the upper side in FIG. 1 is referred to as “upper” and the lower side as “lower”.
  • a semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.
  • the through electrode substrate 2 includes an organic insulating layer 21 (resin film), a plurality of through wires 22 penetrating the upper surface to the lower surface of the organic insulating layer 21, and a semiconductor chip 23 embedded in the organic insulating layer 21.
  • the organic insulating layer 21 is provided at least on the surface of the semiconductor chip 23 and includes a photosensitive resin composition or a cured product of a photosensitive resin film described later.
  • the semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, a bonding wire 33 for electrically connecting the semiconductor chip 32 and the package substrate 31, a semiconductor chip 32 and a bonding wire.
  • the semiconductor package 3 is stacked on the through electrode substrate 2. Thus, the solder bumps 35 of the semiconductor package 3 and the upper wiring layer 25 of the through electrode substrate 2 are electrically connected.
  • Such a semiconductor device 1 has high reliability because the adhesion of the organic insulating layer 21 to the through wiring 22 and the semiconductor chip 23 is good.
  • the height can be easily reduced. For this reason, it can contribute also to size reduction of the electronic device which incorporates the semiconductor device 1.
  • the semiconductor device 1 can be miniaturized.
  • Lower layer wiring layer 24 and upper layer wiring layer 25 provided in through electrode substrate 2 shown in FIG. 2 each include an insulating layer, a wiring layer, a through wiring, and the like.
  • the lower layer wiring layer 24 and the upper layer wiring layer 25 include interconnections inside and on the surface, and are electrically connected to penetrate in the thickness direction through the through interconnections.
  • the wiring layer included in the lower layer wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26.
  • the lower wiring layer 24 functions as a rewiring layer of the semiconductor chip 23, and the solder bumps 26 function as external terminals of the semiconductor chip 23.
  • the through wiring 22 shown in FIG. 2 is provided to penetrate the organic insulating layer 21. Thereby, the lower wiring layer 24 and the upper wiring layer 25 can be electrically connected. As a result, the through electrode substrate 2 and the semiconductor package 3 can be stacked, and the semiconductor device 1 can be highly functional.
  • the wiring layer included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 22 and the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23 and functions as a rewiring layer of the semiconductor chip 23 and as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works. As a result, the rewiring layer can be densified.
  • the effect of reinforcing the organic insulating layer 21 can be obtained by the through wiring 22 penetrating the organic insulating layer 21. Therefore, even when the mechanical strength of the lower wiring layer 24 and the upper wiring layer 25 is low, it is possible to avoid the reduction in the mechanical strength of the entire through electrode substrate 2. As a result, the thickness of the lower wiring layer 24 and the upper wiring layer 25 can be further reduced, and the height of the semiconductor device 1 can be further reduced.
  • the organic insulating layer 21 is provided to cover the semiconductor chip 23.
  • the effect of protecting the semiconductor chip 23 is enhanced.
  • the reliability of the semiconductor device 1 can be improved.
  • the semiconductor device 1 which can be easily applied to the mounting method like the package on package structure which concerns on this embodiment is obtained.
  • the diameter W (see FIG. 2) of the through wiring 22 is not particularly limited, but is preferably about 1 to 100 ⁇ m, and more preferably about 2 to 80 ⁇ m. Thereby, the conductivity of the through wiring 22 can be secured without impairing the mechanical properties of the organic insulating layer 21.
  • the semiconductor package 3 shown in FIG. 2 may be any type of package.
  • Quad Flat Package QFP
  • Small Outline Package SOP
  • Ball Grid Array BGA
  • Chip Size Package CSP
  • Quad Flat Non-leaded Package QFN
  • Small Outline Non-leaded Package SON
  • a form such as LF-BGA (Lead Flame BGA) may be mentioned.
  • the form of the semiconductor chip 32 is not particularly limited, but the semiconductor chip 32 shown in FIG. 1 as an example is configured by laminating a plurality of chips. For this reason, high densification is achieved. Note that the plurality of chips may be juxtaposed in the planar direction, or may be juxtaposed in the planar direction while being stacked in the thickness direction.
  • the package substrate 31 may be any substrate, and is, for example, a substrate including an insulating layer, a wiring layer, a through wiring, and the like (not shown). Among these, the solder bump 35 and the bonding wire 33 can be electrically connected through the through wiring.
  • the sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wire 33 can be protected from external force and the external environment.
  • one of the semiconductor chip 23 and the semiconductor chip 32 is an arithmetic element such as a central processing unit (CPU), a graphics processing unit (GPU), or an application processor (AP), and the other is a dynamic random access (DRAM)
  • CPU central processing unit
  • GPU graphics processing unit
  • AP application processor
  • DRAM dynamic random access
  • a storage element such as a memory or a flash memory
  • these elements can be arranged close to each other in the same device, so that a semiconductor device 1 having both high performance and miniaturization can be realized.
  • Organic insulating layer 21 Next, the organic insulating layer 21 will be particularly described in detail.
  • the organic insulating layer 21 of the present embodiment includes a photosensitive resin composition to be described later or a cured product of a photosensitive resin film.
  • the cured product of the photosensitive resin composition according to the present embodiment preferably has a glass transition temperature (Tg) of 140 ° C. or higher, and 150 ° C. or higher. Is more preferable, and 160 ° C. or more is further preferable.
  • Tg glass transition temperature
  • the upper limit of the cured product of the photosensitive resin composition may not be particularly set, but is, for example, 250 ° C. or less.
  • the glass transition temperature of the cured product of the photosensitive resin composition is measured using a thermomechanical analyzer (TMA) for a predetermined test piece (width 4 mm ⁇ length 20 mm ⁇ thickness 0.005 to 0.015 mm). It is calculated from the result of measurement under the conditions of start temperature 30 ° C., measurement temperature range 30 to 400 ° C., temperature raising rate 5 ° C./min.
  • TMA thermomechanical analyzer
  • the cured product of the photosensitive resin composition according to this embodiment preferably has a linear expansion coefficient (CTE) of 5 to 80 ppm / ° C., more preferably 10 to 70 ppm / ° C., and more preferably 15 to 60 ppm / ° C. More preferably, it is ° C.
  • CTE linear expansion coefficient
  • the linear expansion coefficient of the organic insulating layer 21 can be made close to, for example, the linear expansion coefficient of a silicon material. Therefore, for example, the organic insulating layer 21 in which the semiconductor chip 23 is not easily warped can be obtained. As a result, a highly reliable semiconductor device 1 can be obtained.
  • the linear expansion coefficient of the cured product of the photosensitive resin composition was measured using a thermomechanical analyzer (TMA) for a predetermined test piece (width 4 mm ⁇ length 20 mm ⁇ thickness 0.005 to 0.015 mm). It is calculated from the result of measurement under the conditions of start temperature 30 ° C., measurement temperature range 30 to 400 ° C., temperature raising rate 5 ° C./min.
  • TMA thermomechanical analyzer
  • the cured product of the photosensitive resin composition according to this embodiment preferably has a 5% thermal weight loss temperature Td5 of 300 ° C. or higher, and more preferably 320 ° C. or higher.
  • Td5 thermal weight loss temperature
  • the 5% thermal weight loss temperature Td5 of the cured product of the photosensitive resin composition is calculated from the result of measurement using a differential thermal thermal simultaneous measurement device (TG / DTA) for 5 mg of the cured product. Ru.
  • the cured product of the photosensitive resin composition according to the present embodiment preferably has an elongation of 5 to 50%, more preferably 6 to 45%, still more preferably 7 to 40%. .
  • the elongation rate of the organic insulating layer 21 is optimized, so that, for example, even when the through wiring 22 is provided to penetrate the organic insulating layer 21, the organic insulating layer 21 and the through wiring 22 and It is possible to suppress the occurrence of peeling or the like at the interface of Also in the organic insulating layer 21 itself, the occurrence of cracks and the like can be suppressed.
  • the elongation percentage when the elongation percentage is below the lower limit value, there is a possibility that a crack or the like may occur in the organic insulating layer 21 depending on the thickness, the shape, and the like of the organic insulating layer 21.
  • the elongation percentage exceeds the upper limit value, the mechanical properties of the organic insulating layer 21 may be deteriorated depending on the thickness, the shape, and the like of the organic insulating layer 21.
  • the elongation of the cured product of the photosensitive resin composition is measured as follows. First, for a predetermined test piece (width 6.5 mm ⁇ length 20 mm ⁇ thickness 0.005 to 0.015 mm), a tensile test (tension speed: 5 mm / min) was performed in an atmosphere with a temperature of 25 ° C. and a humidity of 55%. To carry out. The tensile test is performed using a tensile tester (Tensilon RTA-100) manufactured by Orientec Co., Ltd. Then, the tensile elongation rate is calculated from the result of the said tensile test.
  • the cured product of the photosensitive resin composition according to this embodiment preferably has a tensile strength of 20 MPa or more, and more preferably 30 to 300 MPa.
  • the organic insulating layer 21 having sufficient mechanical strength and excellent durability can be obtained.
  • cured material of the photosensitive resin composition is calculated
  • the cured product of the photosensitive resin composition according to this embodiment preferably has a tensile elastic modulus of 0.5 GPa or more, and more preferably 1 to 5 GPa.
  • the organic insulating layer 21 having sufficient mechanical strength and excellent durability can be obtained.
  • cured material of the photosensitive resin composition is calculated
  • a photosensitive resin composition is coated on a silicon wafer substrate by a spin coater or the like, and then dried on a hot plate at 120 ° C. for 5 minutes to obtain a coated film.
  • the obtained coating film is exposed on the entire surface at 700 mJ / cm 2 and subjected to PEB (Post Exposure Bake) at 70 ° C. for 5 minutes. Thereafter, the film is heated at 200 ° C. for 90 minutes to obtain a cured film.
  • PEB Post Exposure Bake
  • the semiconductor device 1 of the present embodiment described above can be manufactured, for example, as follows.
  • 3 and 4 are diagrams showing an example of a method of manufacturing the semiconductor device 1 shown in FIG.
  • the substrate 202 is prepared.
  • the constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials and the like. Further, as the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used. Note that an electronic circuit may be formed on the substrate 202 as necessary.
  • the semiconductor chip 23 is disposed on the substrate 202.
  • a plurality of semiconductor chips 23 are disposed while being separated from each other.
  • the plurality of semiconductor chips 23 may be of the same type as each other or may be of different types.
  • an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23.
  • the interposer functions as, for example, a rewiring layer of the semiconductor chip 23. Therefore, the interposer may be provided with a pad (not shown) for electrically connecting with the electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and the arrangement pattern of the semiconductor chip 23 can be converted, and the design freedom of the semiconductor device 1 can be further enhanced.
  • a silicon substrate, a ceramic substrate, an inorganic substrate such as a glass substrate, an organic substrate such as a resin substrate, or the like is used for such an interposer.
  • the photosensitive resin layer 210 is disposed on the substrate 202 so that the semiconductor chip 23 is embedded.
  • the photosensitive resin layer 210 the photosensitive resin composition or photosensitive resin film mentioned later is used.
  • the semiconductor chip 23 can be easily embedded without thinning.
  • the photosensitive resin film alone may be attached from above the semiconductor chip 23, and the photosensitive resin film laminated on the carrier film may be used as a semiconductor chip. After pasting on the substrate 23, the photosensitive resin film may be left by peeling off the carrier film.
  • the well-known laminating method may be used.
  • a vacuum laminator is used.
  • the vacuum laminator may be a batch type or a continuous type.
  • the photosensitive resin film may be heated as required.
  • the heating temperature is appropriately set according to the constituent material of the photosensitive resin film, the heating time and the like, but is preferably about 40 to 150 ° C., more preferably about 50 to 140 ° C., and more preferably 60 to 130 It is more preferable that the temperature be about ° C.
  • the temperature be about ° C.
  • heating temperature is lower than the lower limit value, melting of the photosensitive resin film is insufficient, and the embedding property may be lowered depending on the constituent material of the photosensitive resin film.
  • the heating temperature exceeds the upper limit value, depending on the constituent material of the photosensitive resin film, etc., there is a risk of curing.
  • the heating time is appropriately set according to the constituent material of the photosensitive resin film, the heating temperature and the like, but is preferably about 5 to 180 seconds, and more preferably about 10 to 60 seconds.
  • the semiconductor chip 23 can be embedded by being heated and pressurized.
  • the pressure applied at that time is appropriately set according to the constituent material of the photosensitive resin film and the like, but is preferably about 0.2 to 5 MPa, and more preferably about 0.4 to 1 MPa.
  • the viscosity is adjusted with a solvent or the like as necessary, and the solution is applied onto the substrate 202 using various coating devices. Then, the photosensitive resin layer 210 is obtained by drying the obtained coating film. The application and drying of the varnish-like photosensitive resin composition may be repeated several times in order to ensure a sufficient thickness so that the semiconductor chip is completely embedded.
  • a coating apparatus As a coating apparatus, a spin coater, a spray apparatus, an inkjet apparatus etc. are mentioned, for example.
  • the film thickness of the photosensitive resin film (film thickness of the photosensitive resin layer 210) is appropriately set according to the film thickness after curing (height H in FIG. 2) and in consideration of curing shrinkage, while the semiconductor chip
  • the thickness is not particularly limited as long as the thickness 23 can be embedded.
  • the film thickness of the photosensitive resin film it is preferably about 20 to 1000 ⁇ m, more preferably about 50 to 750 ⁇ m, and still more preferably about 100 to 500 ⁇ m.
  • the mask 41 is disposed in a predetermined area on the photosensitive resin layer 210. Then, light (actinic radiation) is irradiated through the mask 41. Thus, the photosensitive resin layer 210 is exposed according to the pattern of the mask 41.
  • a post-exposure heat treatment is performed.
  • the conditions of the post-exposure heat treatment are not particularly limited, but for example, the heating temperature is about 50 to 150 ° C., and the heating time is about 1 to 10 minutes.
  • FIG. 3D shows the case where the photosensitive resin layer 210 has so-called negative type photosensitivity.
  • the solubility in the developer is given to the area corresponding to the non-light shielding portion of the mask 41.
  • development processing is performed to form an opening 42 penetrating the photosensitive resin layer 210 corresponding to the non-light shielding portion of the mask 41 (see FIG. 3E).
  • a developing solution an organic type developing solution, a water-soluble developing solution, etc. are mentioned, for example.
  • the photosensitive resin layer 210 is subjected to a post-development heat process.
  • the conditions for the post-development heat treatment are not particularly limited, but the heating temperature is about 160 to 250 ° C., and the heating time is about 30 to 180 minutes. Thereby, the photosensitive resin layer 210 can be cured and the organic insulating layer 21 can be obtained while suppressing the thermal influence on the semiconductor chip 23.
  • a known method is used to form the through wiring 22, and for example, the following method is used.
  • a seed layer (not shown) is formed on the organic insulating layer 21.
  • the seed layer is formed on the top surface of the organic insulating layer 21 together with the inside (sidewalls and bottom surface) of the opening 42.
  • a seed layer for example, a copper seed layer is used. Also, the seed layer is formed, for example, by sputtering.
  • the seed layer may be made of the same kind of metal as the through wire 22 to be formed, or may be made of different kinds of metal.
  • a resist layer (not shown) is formed on the region other than the opening 42 in the seed layer (not shown).
  • metal is filled in the opening 42 using the resist layer as a mask.
  • electrolytic plating is used for this filling.
  • the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like.
  • the conductive material is embedded in the opening 42 to form the through wiring 22.
  • the formation location of the penetration wiring 22 is not limited to the position of illustration.
  • it may be provided at a position passing through the photosensitive resin layer 210 covering the semiconductor chip 23.
  • the upper wiring layer 25 is formed on the upper surface side of the organic insulating layer 21.
  • the upper wiring layer 25 is formed, for example, using a photolithography method and a plating method.
  • the substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.
  • the lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21.
  • the lower wiring layer 24 is formed using, for example, a photolithography method and a plating method.
  • the lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 through the through wiring 22.
  • solder bumps 26 are formed in the lower wiring layer 24.
  • a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.
  • the through electrode substrate 2 is obtained.
  • the through electrode substrate 2 shown in FIG. 4 (j) can be divided into a plurality of regions. Therefore, for example, the through electrode substrate 2 can be efficiently manufactured by dividing the through electrode substrate 2 along the alternate long and short dash line shown in FIG. 4 (j).
  • a diamond cutter etc. can be used for individualization, for example.
  • the semiconductor package 3 is disposed on the singulated through electrode substrate 2. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.
  • Such a method of manufacturing the semiconductor device 1 can be applied to a wafer level process or a panel level process using a large area substrate.
  • the photosensitive resin layer 210 containing the photosensitive resin composition By using the photosensitive resin layer 210 containing the photosensitive resin composition, the arrangement of the semiconductor chip 23, the embedding of the semiconductor chip 23, the formation of the through wiring 22, the formation of the upper wiring layer 25, and the formation of the lower wiring layer 24. Can be performed in a wafer level process or a panel level process. As a result, the manufacturing efficiency of the semiconductor device 1 can be enhanced and the cost can be reduced.
  • FIG. 5 is a longitudinal sectional view showing a second embodiment of the semiconductor device of the present invention. 6 is a partially enlarged view of a region surrounded by a dashed line in FIG. In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side as “lower”.
  • the configuration of the through wiring formed in the organic insulating layer 21 is different, and the upper wiring layer 25 is formed using a photosensitive resin composition described later.
  • the semiconductor device of the second embodiment is the same as the semiconductor device 1 of the first embodiment described above except for the semiconductor device of the first embodiment described above.
  • the organic insulating layer 21 is provided with the through wiring 221 so as to penetrate the organic insulating layer 21.
  • the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through electrode substrate 2 and the semiconductor package 3 can be stacked. Therefore, the semiconductor device 1 can be highly functional. it can.
  • the diameter W (see FIG. 6) of the through wiring 221 is not particularly limited, but may be the same size as the diameter W of the through wiring 22 of the semiconductor device 1 of the first embodiment described above.
  • the semiconductor device 1 according to the present embodiment also includes a through wiring 222 provided so as to penetrate the organic insulating layer 21 located on the top surface of the semiconductor chip 23. Thereby, the electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.
  • the wiring layer 253 included in the upper wiring layer 25 shown in FIG. 6 is connected to the through wiring 221 and the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23 and functions as a rewiring layer of the semiconductor chip 23 and as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works.
  • the upper wiring layer 25 is formed by using a photosensitive resin composition described later, and has a structure in which the wiring layer 253 is embedded in the resin film of the photosensitive resin composition. In such a semiconductor device 1, the adhesion of the upper wiring layer 25 to the wiring layer 253 is good, so the reliability is high.
  • FIG. 7 is a process diagram showing a method of manufacturing the semiconductor device 1 shown in FIG. 8 to 10 are views for explaining a method of manufacturing the semiconductor device 1 shown in FIG. 5, respectively.
  • a solder bump forming step S5 for forming the through electrode substrate 2 and a laminating step S6 for laminating the semiconductor package 3 on the through electrode substrate 2 are provided.
  • a photosensitive resin varnish 5 is disposed on the organic insulating layer 21 and the semiconductor chip 23, and a first resin film disposing step S20 for obtaining a photosensitive resin layer 2510;
  • Chip placement step S1 First, as shown in FIG. 8A, the substrate 202, the semiconductor chip 23 and the through wires 221 and 222 provided on the substrate 202, and the organic insulating layer 21 provided to embed them are provided. The chip embedded structure 27 is prepared.
  • the constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials and the like. Further, as the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used.
  • the semiconductor chip 23 is bonded onto the substrate 202.
  • a plurality of semiconductor chips 23 are provided on the same substrate 202 while being separated from each other.
  • the plurality of semiconductor chips 23 may be of the same type as each other or may be of different types.
  • the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.
  • an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23.
  • the interposer functions as, for example, a rewiring layer of the semiconductor chip 23. Therefore, the interposer may be provided with a pad (not shown) for electrically connecting with the electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and the arrangement pattern of the semiconductor chip 23 can be converted, and the design freedom of the semiconductor device 1 can be further enhanced.
  • a silicon substrate, a ceramic substrate, an inorganic substrate such as a glass substrate, an organic substrate such as a resin substrate, or the like is used for such an interposer.
  • the organic insulating layer 21 is, for example, a resin film containing a thermosetting resin or a thermoplastic resin as mentioned as a component of the photosensitive resin composition described later.
  • penetration wiring 221 and 222 As a constituent material of penetration wiring 221 and 222, copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy etc. are mentioned, for example.
  • the chip embedded structure 27 manufactured by a method different from the above may be prepared.
  • the application of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spray device, an inkjet device, or the like.
  • the viscosity of the photosensitive resin varnish 5 is not particularly limited, but is preferably 10 to 700 mPa ⁇ s, and more preferably 30 to 400 mPa ⁇ s.
  • a thinner photosensitive resin layer 2510 (see FIG. 8D) can be formed.
  • the upper wiring layer 25 can be made thinner, and the semiconductor device 1 can be easily made thinner.
  • the viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) under the conditions of a rotational speed of 50 rpm and a measuring time of 300 seconds.
  • the drying conditions of the photosensitive resin varnish 5 are not particularly limited, and for example, the conditions of heating at a temperature of 80 to 150 ° C. for 1 to 60 minutes may be mentioned.
  • the photosensitive resin film is manufactured, for example, by applying the photosensitive resin varnish 5 on the lower surface of the carrier film or the like by various coating devices and then drying the obtained coating film.
  • the photosensitive resin layer 2510 is subjected to a pre-exposure heat treatment, as necessary.
  • a pre-exposure heat treatment By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 can be stabilized, and the reaction in the first exposure step S21 described later can be stabilized, while the heating conditions as described later By heating with the above, the adverse effect of the heating on the photoacid generator can be minimized.
  • the temperature of the heat treatment before exposure is preferably 70 to 130 ° C., more preferably 75 to 120 ° C., and still more preferably 80 to 110 ° C. If the temperature of the pre-exposure heat treatment is below the lower limit value, the purpose of the stabilization of molecules by the pre-exposure heat treatment may not be achieved. On the other hand, when the temperature of the pre-exposure heat treatment exceeds the upper limit value, the movement of the photoacid generator becomes too active, and the acid is less likely to be generated even when light is irradiated in the first exposure step S21 described later. However, the processing accuracy of patterning may be lowered.
  • the time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment, but is preferably 1 to 10 minutes, more preferably 2 to 8 minutes at the temperature, and more preferably 3 to 6 minutes. If the time of the pre-exposure heat treatment is below the lower limit value, the heating time is insufficient, so that the purpose of the stabilization of the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the pre-exposure heat treatment time exceeds the upper limit value, the heating time is too long, so even if the pre-exposure heat treatment temperature falls within the above range, the action of the photoacid generator is inhibited. There is a risk of
  • the atmosphere of the heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is in the air in consideration of work efficiency and the like.
  • the atmospheric pressure is not particularly limited, and may be under reduced pressure or under pressure, but it is normal pressure in consideration of work efficiency and the like.
  • the normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.
  • a mask 412 is disposed in a predetermined region on the photosensitive resin layer 2510. Then, light (actinic radiation) is emitted through the mask 412. Thus, the photosensitive resin layer 2510 is exposed according to the pattern of the mask 412.
  • FIG. 8D shows the case where the photosensitive resin layer 2510 has so-called negative type photosensitivity.
  • the solubility in the developing solution is given to the region corresponding to the light shielding portion of the mask 412.
  • a catalyst such as an acid is generated by the action of the photosensitizer.
  • the generated acid acts as a catalyst for the reaction of the thermosetting resin in the process described later.
  • the exposure dose in the exposure process is not particularly limited, but is preferably 100 to 2000 mJ / cm 2 , and more preferably 200 to 1000 mJ / cm 2 . Thereby, underexposure and overexposure in the photosensitive resin layer 2510 can be suppressed. As a result, high patterning accuracy can finally be realized. Thereafter, if necessary, the photosensitive resin layer 2510 is subjected to a post-exposure heat treatment.
  • the temperature of the heat treatment after exposure is not particularly limited, but is preferably 50 to 150 ° C., more preferably 50 to 130 ° C., still more preferably 55 to 120 ° C., particularly preferably 60 to 110 ° C. Be done.
  • the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be sufficiently reacted in a short time.
  • the temperature is too high, the diffusion of the acid is promoted, and there is a possibility that the processing accuracy of the patterning may be reduced, but if it is within the above range, such concern can be reduced.
  • the temperature of the post-exposure heat treatment is below the lower limit, the action of the catalyst such as acid can not be sufficiently enhanced, which may lower the reaction rate of the thermosetting resin or require time. There is.
  • the temperature of the post-exposure heat treatment exceeds the upper limit value, the diffusion of the acid is promoted (widened), and the processing accuracy of patterning may be lowered.
  • the time of post-exposure heat treatment is appropriately set according to the temperature of post-exposure heat treatment, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes at the temperature, and more preferably 3-15 minutes.
  • the thermosetting resin can be reacted sufficiently, and the diffusion of the acid can be suppressed to suppress the decrease in the processing accuracy of the patterning.
  • the atmosphere for the post-exposure heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is under the atmosphere in consideration of work efficiency and the like.
  • the atmospheric pressure of the post-exposure heat treatment is not particularly limited, and may be under reduced pressure or under pressure, but it is normal pressure in consideration of work efficiency and the like.
  • the normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.
  • Step S22 the photosensitive resin layer 2510 is developed.
  • an opening 423 penetrating the photosensitive resin layer 2510 is formed in a region corresponding to the light shielding portion of the mask 412 (see FIG. 9E).
  • a developing solution an organic type developing solution, a water-soluble developing solution, etc. are mentioned, for example.
  • the photosensitive resin layer 2510 is cured (heat treatment after development). Conditions for the curing treatment are not particularly limited, but the heating temperature is about 160 to 250 ° C., and the heating time is about 30 to 240 minutes. Thus, the photosensitive resin layer 2510 can be cured to obtain the organic insulating layer 251 while suppressing the thermal influence on the semiconductor chip 23.
  • the wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 9F).
  • the wiring layer 253 is formed, for example, by obtaining a metal layer using a vapor deposition method such as a sputtering method or a vacuum evaporation method, and then patterning the metal layer using a photolithography method and an etching method.
  • a surface modification process such as a plasma process may be performed.
  • the processing conditions are, for example, the conditions described in the first resin film disposing step S20.
  • the processing conditions are, for example, the conditions described in the first exposure step S21.
  • Second Development Step S27 Next, the photosensitive resin layer 2520 is developed.
  • the processing conditions are, for example, the conditions described in the first development step S22.
  • an opening 424 penetrating the photosensitive resin layers 2510 and 2520 is formed (see FIG. 9H).
  • Second curing step S28 After the development process, the photosensitive resin layer 2520 is cured (heat treatment after development).
  • the curing conditions are, for example, the conditions described in the first curing step S23.
  • the photosensitive resin layer 2520 is cured to obtain the organic insulating layer 252 (see FIG. 10I).
  • the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252, it may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be repeatedly added.
  • a known method is used to form the through wiring 254, and for example, the following method is used.
  • a seed layer (not shown) is formed on the top surface of the organic insulating layer 252 together with the inner surface (side surface and bottom surface) of the opening 424.
  • a seed layer for example, a copper seed layer is used. Also, the seed layer is formed, for example, by sputtering.
  • the seed layer may be made of the same kind of metal as the through wiring 254 to be formed, or may be made of different kinds of metal.
  • a resist layer (not shown) is formed on the region other than the opening 424 in the seed layer (not shown).
  • metal is filled in the opening 424 using the resist layer as a mask.
  • electrolytic plating is used for this filling.
  • the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like.
  • the conductive material is embedded in the opening 424 to form the through wiring 254.
  • the resist layer not shown is removed. Further, the seed layer (not shown) on the organic insulating layer 252 is removed. For this, for example, a flash etching method can be used.
  • the formation location of the penetration wiring 254 is not limited to the position of illustration.
  • Substrate peeling process S3 Next, as shown in FIG. 10J, the substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.
  • Lower layer wiring layer forming step S4 Next, as shown in FIG. 10K, the lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21.
  • the lower wiring layer 24 may be formed by any method, and may be formed, for example, in the same manner as the above-described upper wiring layer forming step S2.
  • the lower wiring layer 24 formed in this manner is electrically connected to the upper wiring layer 25 through the through wiring 221.
  • solder bump forming step S5 Next, as shown in FIG. 10L, the solder bumps 26 are formed in the lower wiring layer 24. In addition, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary. As described above, the through electrode substrate 2 is obtained.
  • the through electrode substrate 2 shown in FIG. 10L can be divided into a plurality of regions. Therefore, the plurality of through electrode substrates 2 can be efficiently manufactured, for example, by dividing the through electrode substrate 2 along the alternate long and short dash line shown in FIG. 10 (L).
  • a diamond cutter etc. can be used for individualization, for example.
  • Such a method of manufacturing the semiconductor device 1 can be applied to a wafer level process or a panel level process using a large area substrate. As a result, the manufacturing efficiency of the semiconductor device 1 can be enhanced and the cost can be reduced.
  • the photosensitive resin composition of the present invention may be a varnish-like solution or a film.
  • the photosensitive resin composition according to the present embodiment contains a thermosetting resin, a photopolymerization initiator as a photosensitizer, and a coupling agent containing an acid anhydride as a functional group.
  • a photosensitive resin composition has good adhesion to inorganic materials and metal materials such as the semiconductor chip 23, the through wires 22, 221 and 222 and the wiring layer 253 by the action of the coupling agent. It becomes possible to form.
  • thermosetting resin preferably includes, for example, a semi-hardening (solid) thermosetting resin at normal temperature (25 ° C.). Such a thermosetting resin is melted by being heated and pressurized at the time of molding, and is cured while being molded into a desired shape. As a result, organic insulating layers 21, 251, 252 utilizing the characteristics of the thermosetting resin can be obtained.
  • thermosetting resin for example, phenol novolac epoxy resin, novolac epoxy resin such as cresol novolac epoxy resin, cresol naphthol epoxy resin, biphenyl epoxy resin, biphenyl aralkyl epoxy resin, phenoxy resin, naphthalene skeleton Epoxy resin, bisphenol A epoxy resin, bisphenol A diglycidyl ether epoxy resin, bisphenol F epoxy resin, bisphenol F diglycidyl ether epoxy resin, bisphenol S diglycidyl ether epoxy resin, glycidyl ether epoxy resin, cresol Novolak type epoxy resin, aromatic polyfunctional epoxy resin, aliphatic epoxy resin, aliphatic polyfunctional epoxy resin, alicyclic epoxy resin, polyfunctional Epoxy resin such as alicyclic epoxy resin; resin having a triazine ring such as urea (urea) resin, melamine resin; unsaturated polyester resin; maleimide resin such as bismaleimide compound; polyurethane resin; diallyl phthalate resin; silicone resin; Benz
  • thermosetting resin those containing an epoxy resin are preferably used.
  • the epoxy resin include polyfunctional epoxy resins in which two or more epoxy groups are contained in one molecule.
  • the polyfunctional epoxy resin has a plurality of epoxy groups in one molecule, and thus has high reactivity with the photopolymerization initiator. Therefore, the resin film can be sufficiently cured even when the exposure process is performed for a relatively small amount and a short time on the resin film of the photosensitive resin composition.
  • the polyfunctional epoxy resin may be used alone or in combination with the above-mentioned plurality of various thermosetting resins.
  • the epoxy resin a trifunctional or higher polyfunctional epoxy resin may be used.
  • thermosetting resin is, in particular, phenol novolac epoxy resin, cresol novolac epoxy resin, triphenylmethane epoxy resin, dicyclopentadiene epoxy resin, bisphenol A epoxy resin, and tetramethyl bisphenol F epoxy resin It is preferable to include one or more epoxy resins selected from the group consisting of, more preferably include a polyfunctional epoxy resin, and still more preferably include a polyfunctional aromatic epoxy resin. Since such a thermosetting resin is rigid, it has good curability, high heat resistance, and organic insulating layers 21, 251, 252 having a relatively low coefficient of thermal expansion.
  • the thermosetting resin preferably contains a solid resin at normal temperature as described above, and may contain both a resin solid at normal temperature and a resin liquid at normal temperature.
  • the photosensitive resin composition containing such a thermosetting resin has good embedding property of the semiconductor chip 23 etc., improvement of tack (stickiness) when formed into a film, and an organic insulating layer 21 which is a cured product,
  • the mechanical strengths of 251 and 252 can be made compatible. As a result, it is possible to obtain the organic insulating layers 21, 251, 252 having high mechanical strength in which planarization is achieved while suppressing the generation of voids.
  • the amount of the resin liquid at room temperature is preferably about 5 to 150 parts by mass with respect to 100 parts by mass of the resin solid at room temperature. It is more preferably about 100 parts by mass, and even more preferably about 15 to 80 parts by mass.
  • the ratio of the liquid resin is below the lower limit value, the embeddability of the semiconductor chip 23 in the photosensitive resin composition may be reduced, or the stability when formed into a film may be reduced.
  • the ratio of liquid resin exceeds the above upper limit, the tack when forming a film of the photosensitive resin composition is deteriorated, or the mechanical strength of the organic insulating layers 21, 251, 252 which is a cured product is reduced. There is a risk of
  • solid resin at normal temperature examples include phenol novolac epoxy resin, cresol novolac epoxy resin, and phenoxy resin.
  • liquid resin at normal temperature for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, alkyl glycidyl ether, butanetetracarboxylic acid tetra (3,4-epoxycyclohexylmethyl) modified ⁇ -caprolactone, 3 ', 4′-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, 2-ethylhexyl glycidyl ether, trimethylolpropane polyglycidyl ether and the like. These may be used alone or in combination of two or more.
  • the resin which is liquid at normal temperature preferably contains both an aromatic compound and an aliphatic compound.
  • a photosensitive resin composition containing such a compound imparts appropriate flexibility when filmed mainly by an aliphatic compound, and retains shape when filmed mainly by an aromatic compound. Is granted. As a result, a photosensitive resin film having compatibility between flexibility and shape retention can be obtained.
  • a cured product of the photosensitive resin composition by containing both a resin that is solid at room temperature and a resin that is liquid at room temperature, or that the resin that is liquid at room temperature contains both an aromatic compound and an aliphatic compound
  • the amount of the aliphatic compound is preferably about 5 to 150 parts by mass, more preferably about 10 to 80 parts by mass, and about 15 to 50 parts by mass with respect to 100 parts by mass of the aromatic compound. Is more preferred.
  • the ratio of the aliphatic compound is below the lower limit value, the flexibility of the film may be lowered depending on the composition of the photosensitive resin composition and the like.
  • the ratio of the aliphatic compound exceeds the upper limit value, the shape retention of the film may be lowered depending on the composition of the photosensitive resin composition and the like.
  • the content of the epoxy resin is not particularly limited, but is preferably about 40 to 80% by mass, more preferably about 45 to 75% by mass, of the total solid content of the photosensitive resin composition, and more preferably 50 to 70 It is more preferable that the content is about% by mass.
  • solid content of the photosensitive resin composition refers to the non volatile matter in the photosensitive resin composition, and refers to the remainder except volatile components, such as water and a solvent.
  • the content of the photosensitive resin composition with respect to the entire solid content refers to the content with respect to the entire solid content excluding the solvent in the photosensitive resin composition when the solvent is contained.
  • the photosensitive resin composition of the present invention may contain a curing agent.
  • the curing agent is not particularly limited as long as it accelerates the polymerization reaction of the thermosetting resin.
  • the thermosetting resin contains an epoxy resin
  • a curing agent having a phenolic hydroxyl group is used.
  • a phenol resin can be used.
  • a phenol resin As a phenol resin, a novolak-type phenol resin, a resol-type phenol resin, a trisphenylmethane-type phenol resin, an aryl alkylene type phenol resin etc. are mentioned, for example. Among these, novolac type phenol resins are particularly preferably used. Thereby, photosensitive resin layers 210, 2510, 2520 having good curability and good development characteristics can be obtained.
  • the addition amount of the curing agent is not particularly limited, but is preferably 25 parts by mass or more and 100 parts by mass or less, more preferably 30 parts by mass or more and 90 parts by mass or less, with respect to 100 parts by mass of the resin More preferably, it is from 80 parts by weight to 80 parts by weight.
  • the photosensitive resin composition may further contain a thermoplastic resin. While being able to improve the moldability of the photosensitive resin composition more by this, the flexibility of the hardened
  • thermoplastic resin for example, phenoxy resin, acrylic resin, polyamide resin (for example, nylon etc.), thermoplastic urethane resin, polyolefin resin (for example, polyethylene, polypropylene etc.), polycarbonate, polyester resin (for example polyethylene terephthalate) , Polybutylene terephthalate etc.), polyacetal, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluorocarbon resin (eg polytetrafluoroethylene, polyvinylidene fluoride etc.), modified polyphenylene ether, polysulfone, polyether sulfone, polyarylate, polyamide An imide, a polyether imide, a thermoplastic polyimide etc. are mentioned. In the photosensitive resin composition, one of these may be used alone, or two or more having different weight average molecular weights may be used in combination, and one or more of them may be used. You may use together with a prepolymer.
  • Phenoxy resin is preferably used as the thermoplastic resin.
  • Phenoxy resins also called polyhydroxy polyethers, are characterized by having a larger molecular weight than epoxy resins. By including such a phenoxy resin, it is possible to suppress the decrease in the flexibility of the cured product of the photosensitive resin composition.
  • phenoxy resin for example, bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, copolymerized phenoxy resin of bisphenol A type and bisphenol F type, biphenyl type phenoxy resin, bisphenol S type phenoxy resin, biphenyl type phenoxy resin and bisphenol Copolymerized phenoxy resin etc. with S type phenoxy resin etc. are mentioned, and 1 type, or 2 or more types of mixtures of these are used.
  • bisphenol A-type phenoxy resin or copolymerized phenoxy resin of bisphenol A-type and bisphenol F-type is preferably used.
  • phenoxy resin what has an epoxy group in molecular chain both ends is used preferably. According to such a phenoxy resin, when an epoxy resin is used as the thermosetting resin, excellent solvent resistance and heat resistance can be imparted to a cured product of the photosensitive resin composition.
  • phenoxy resin what is solid at normal temperature is used preferably. Specifically, a phenoxy resin having a nonvolatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.
  • the weight average molecular weight of the thermoplastic resin is not particularly limited, but is preferably about 10000 to 100000, and more preferably about 20000 to 80000. By using such a relatively high molecular weight thermoplastic resin, it is possible to impart good flexibility to the cured product and also to impart sufficient solubility in a solvent.
  • the weight average molecular weight of a thermoplastic resin is measured as a polystyrene conversion value by the gel permeation chromatography (GPC) method, for example.
  • the addition amount of the thermoplastic resin is not particularly limited, but is preferably 10 parts by mass or more and 90 parts by mass or less, and more preferably 15 parts by mass or more and 80 parts by mass or less with respect to 100 parts by mass of the thermosetting resin. Preferably, it is more preferably 20 parts by mass or more and 70 parts by mass or less.
  • thermoplastic resin when the addition amount of a thermoplastic resin is less than the said lower limit, depending on the component contained in the photosensitive resin composition and its compounding ratio, sufficient flexibility may not be provided to the hardened
  • a photo-acid generator As a photosensitizer, a photo-acid generator can be used, for example.
  • the photoacid generator contains a photoacid generator which generates an acid upon irradiation with an actinic ray such as ultraviolet light and functions as a photopolymerization initiator of the curable resin described above.
  • an onium salt compound is mentioned, for example.
  • iodonium salts such as diazonium salts and diaryliodonium salts
  • sulfonium salts such as triaryl sulfonium salts, triaryl bilillium salts, benzyl pyridinium thiocyanate, dialkyl phenacyl sulfonium salts, dialkyl hydroxyphenyl phosphonium salts
  • a cationic type photoinitiator etc. are mentioned.
  • a photosensitive composition contacts a metal, as a photosensitive agent, what does not generate
  • the addition amount of the photosensitizer is not particularly limited, it is preferably about 0.3 to 5% by mass of the total solid content of the photosensitive resin composition, but is preferably about 0.5 to 4.5% by mass. More preferably, it is about 1 to 4% by mass.
  • the photosensitizer may be one which imparts negative photosensitivity to the photosensitive resin composition, or may be one which imparts positive photosensitivity, but an opening with a high aspect ratio. In view of the point that it can be formed with high accuracy, etc., it is preferable to be negative.
  • the photosensitive resin composition according to the present embodiment has a coupling agent containing an acid anhydride as a functional group.
  • a photosensitive resin composition enables formation of a resin film having good adhesion to inorganic materials and metal materials.
  • organic insulating layers 21, 251, 252 having good adhesion to the through wires 22, 221, 222, the wiring layer 253, and the semiconductor chip 23 can be obtained.
  • the acid anhydride which is a functional group dissolves the inorganic oxide and coordinates with a cation (such as a metal cation).
  • the alkoxy group contained in the acid anhydride-containing coupling agent is hydrolyzed to become, for example, silanol.
  • the silanol hydrogen bonds with the surface hydroxyl group of the inorganic material.
  • a coupling agent containing an acid anhydride as a functional group (hereinafter, also abbreviated to as “acid anhydride-containing coupling agent”) is used.
  • a compound containing an alkoxysilyl group is preferably used, and an alkoxysilyl group-containing alkylcarboxylic acid anhydride is preferably used. According to such a coupling agent, a photosensitive resin composition having better adhesion to the inorganic material and the metal material, good sensitivity, and excellent patternability can be obtained.
  • the compound containing an alkoxysilyl group include 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilyl silylsuccinic anhydride, 3-dimethylmethoxysilylpropylsuccinic anhydride, 3-dimethylethoxy Succinic anhydride such as silylpropylsuccinic anhydride, 3-trimethoxysilylpropylcyclohexyldicarboxylic acid anhydride, 3-triethoxysilylpropylcyclohexyldicarboxylic acid anhydride, 3-dimethylmethoxysilylpropylcyclohexyl dicarboxylic acid anhydride, Dicarboxylic acid anhydride such as 3-dimethylethoxysilylpropylcyclohexyl dicarboxylic acid anhydride, 3-trimethoxysilylpropylphthalic anhydride, 3-triethoxysilylpropylpropy
  • alkoxysilyl group-containing succinic anhydride is preferably used, and in particular 3-trimethoxysilylpropyl succinic anhydride is more preferably used. According to such a coupling agent, the molecular length and the molecular structure are optimized, and thus the adhesion and the patterning property described above become better.
  • silane coupling agent was listed here, a titanium coupling agent, a zirconium coupling agent, etc. may be sufficient.
  • the addition amount of the acid anhydride-containing coupling agent is not particularly limited, it is preferably about 0.3 to 5% by mass of the total solid content of the photosensitive resin composition, and 0.5 to 4.5% by mass The degree is more preferably about 1 to 4% by mass.
  • the coupling agent which contains an amino group, an epoxy group, an acryl group, an acryl group, a methacryl group, a mercapto group, a vinyl group, a ureido group, a sulfide group etc. as a functional group is mentioned, for example. These may be used alone or in combination of two or more.
  • amino group-containing coupling agent for example, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, ⁇ -aminopropyltriethoxysilane, ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropylmethyl Diethoxysilane, ⁇ -aminopropylmethyldimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropyltrimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropyltriethoxysilane, N- ⁇ (aminoethyl) ⁇ And -aminopropylmethyldimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropylmethyldiethoxysilane, N-phenyl- ⁇ -amino-propyltrimethoxysilane and the amino group-containing coupling
  • epoxy group-containing coupling agent for example, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidyl propyl Trimethoxysilane etc. are mentioned.
  • acrylic group-containing coupling agent examples include ⁇ - (methacryloxypropyl) trimethoxysilane, ⁇ - (methacryloxypropyl) methyldimethoxysilane, and ⁇ - (methacryloxypropyl) methyldiethoxysilane.
  • Examples of mercapto group-containing coupling agents include 3-mercaptopropyltrimethoxysilane.
  • vinyl group-containing coupling agent examples include vinyltris ( ⁇ -methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.
  • ureido group-containing coupling agents examples include 3-ureidopropyltriethoxysilane and the like.
  • sulfide group-containing coupling agent examples include bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetrasulfide and the like.
  • the addition amount of the other coupling agent is not particularly limited, but is preferably about 1 to 200% by mass, more preferably about 3 to 150% by mass, of the acid anhydride-containing coupling agent, and more preferably 5 to More preferably, it is about 100% by mass.
  • the amount to be added is preferably about 1 to 200% by mass, more preferably about 3 to 150% by mass, of the acid anhydride-containing coupling agent, and more preferably 5 to More preferably, it is about 100% by mass.
  • additives may be added to the photosensitive resin composition as required.
  • examples of other additives include antioxidants, fillers such as silica, surfactants, sensitizers, and film-forming agents.
  • surfactant examples include fluorine-based surfactants, silicon-based surfactants, alkyl-based surfactants, and acrylic-based surfactants.
  • the photosensitive resin composition may contain a solvent. Any solvent can be used without particular limitation as long as it can dissolve the components of the photosensitive resin composition and does not react with the components.
  • the solvent examples include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol And propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate and the like. These may be used alone or in combination of two or more.
  • the photosensitive resin composition may be in the form of a varnish.
  • the varnish-like photosensitive resin composition is prepared, for example, by uniformly mixing the raw material and the solvent.
  • a solvent is added as needed, and it is also possible to make it varnish, without using a solvent.
  • it may be subjected to processing such as filtration with a filter, degassing and the like.
  • the solid content concentration in the varnish-like photosensitive resin composition is not particularly limited, but is preferably about 20 to 80% by mass.
  • a varnish-like photosensitive resin composition having such a solid content concentration has good flowability that easily penetrates into a narrow gap and is difficult to cause film breakage because the viscosity is optimized. It becomes.
  • the photosensitive resin film may be formed by converting the photosensitive resin composition into a film, or may be a film obtained by applying the photosensitive resin composition to the carrier film.
  • Examples of the method for producing the photosensitive resin film of the latter include a method in which a varnish-like photosensitive resin composition is applied on a carrier film and then dried.
  • a coating apparatus As a coating apparatus, a spin coater, a spray apparatus, an inkjet apparatus etc. are mentioned, for example.
  • the content of the solvent in the photosensitive resin film is not particularly limited, but is preferably 10% by mass or less of the entire photosensitive resin film.
  • the tackiness of the photosensitive resin film can be improved, and the curability of the photosensitive resin film can be enhanced.
  • the generation of voids due to the evaporation of the solvent can be suppressed.
  • the drying conditions include, for example, heating at a temperature of 80 to 150 ° C. for 5 to 30 minutes.
  • the photosensitive resin film laminated on the carrier film is useful from the viewpoint of handleability, surface cleanliness and the like.
  • the carrier film may be in the form of a roll that can be wound, or may be in the form of a sheet.
  • a resin material As a constituent material of a carrier film, a resin material, a metal material, etc. are mentioned, for example.
  • the resin material for example, polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonates, silicones, fluorine resins, polyimide resins and the like can be mentioned.
  • a metal material copper or copper alloy, aluminum or aluminum alloy, iron or iron alloy etc. are mentioned, for example.
  • a carrier film containing polyester is preferably used.
  • Such a carrier film has relatively good peelability while suitably supporting the photosensitive resin film.
  • cover film may be provided in the surface of the photosensitive resin film as needed.
  • the cover film protects the surface of the photosensitive resin film until the bonding operation.
  • the constituent material of the cover film is appropriately selected from those listed as constituent materials of the carrier film, but a cover film containing polyester is preferably used from the viewpoint of the protective property and the releasability.
  • the electronic device according to the present embodiment includes the semiconductor device according to the present embodiment described above.
  • Such a semiconductor device is highly reliable because it has a protective film excellent in chemical resistance. Therefore, high reliability is given to the electronic device according to the present embodiment.
  • the electronic device is not particularly limited as long as it has such a semiconductor device, but, for example, a mobile phone, a smartphone, a tablet terminal, an information device such as a personal computer, a communication device such as a server or a router , A vehicle control computer, an in-vehicle device such as a car navigation system, and the like.
  • the photosensitive resin composition, the semiconductor device, and the electronic device of the present invention may be obtained by adding an arbitrary element to the above-described embodiment.
  • the photosensitive resin composition and the photosensitive resin film may be, for example, structure forming materials of MEMS (Micro Electro Mechanical Systems) and various sensors, formation of structures of display devices such as liquid crystal display devices and organic EL devices. It is applicable also to material etc.
  • MEMS Micro Electro Mechanical Systems
  • various sensors formation of structures of display devices such as liquid crystal display devices and organic EL devices. It is applicable also to material etc.
  • the prepared solution was filtered with a polypropylene filter having a pore size of 0.2 ⁇ m to obtain a negative photosensitive resin composition.
  • Examples 2 to 11 A photosensitive resin composition was obtained in the same manner as in Example 1 except that the raw materials were changed as shown in Tables 1 and 2.
  • a varnish-like photosensitive resin composition was applied on a silicon wafer by a spin coater.
  • a liquid film having a thickness of 10 ⁇ m was obtained.
  • the liquid film was dried at 120 ° C. for 5 minutes on a hot plate to obtain a film.
  • the entire surface of the resulting coating film was exposed at 700 mJ / cm 2 .
  • PEB Post Exposure Bake
  • a slit was made in the photosensitive resin film using a tool.
  • the slits were inserted at intervals of 1 mm so as to penetrate the photosensitive resin film, ten each in the vertical and horizontal directions. As a result, 100 squares of 1 mm square were all formed from the photosensitive resin film.
  • the liquid film was dried at 120 ° C. for 5 minutes on a hot plate to obtain a film.
  • the coating film was exposed to light using an i-line stepper (NSR-4425i, manufactured by Nikon Corporation) through a negative pattern mask. Thereafter, a post-exposure heat treatment was performed at 70 ° C. for 5 minutes.
  • the unexposed area was dissolved and removed by performing spray development using propylene glycol monomethyl ether acetate (PGMEA) at 25 ° C. as a developer, and then rinsing with isopropyl alcohol (IPA).
  • PGMEA propylene glycol monomethyl ether acetate
  • IPA isopropyl alcohol
  • the negative photosensitive resin composition of the present invention comprises a thermosetting resin, a photopolymerization initiator, and a coupling agent containing an acid anhydride as a functional group.
  • a coupling agent containing an acid anhydride as a functional group a resin film formed of a negative photosensitive resin composition adheres to a semiconductor chip formed of an inorganic material or a metal material or various metal wires. The quality is good. Therefore, the reliability of a semiconductor device using such a negative photosensitive resin composition can be increased. Thus, the present invention has industrial applicability.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Engineering & Computer Science (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

La présente invention concerne une composition de résine photosensible négative qui contient une résine thermodurcissable, un amorceur de photopolymérisation et un agent de couplage qui contient un anhydride d'acide en tant que groupe fonctionnel. Il est préférable que la résine thermodurcissable contienne une résine époxyde polyfonctionnelle. Il est également préférable que la teneur de la résine époxyde polyfonctionnelle soit de 40% à 80% en masse par rapport aux composants non volatils de la composition de résine photosensible négative. Il est également préférable que l'agent de couplage soit un composé contenant un groupe alcoxysilyle, qui comprend de l'anhydride d'acide succinique en tant que groupe fonctionnel.
PCT/JP2018/031738 2017-08-28 2018-08-28 Composition de résine photosensible négative, dispositif à semi-conducteur et dispositif électronique Ceased WO2019044817A1 (fr)

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CN201880055884.7A CN111033379A (zh) 2017-08-28 2018-08-28 负型感光性树脂组合物、半导体装置和电子设备
KR1020207005419A KR102135599B1 (ko) 2017-08-28 2018-08-28 네거티브형 감광성 수지 조성물, 반도체 장치 및 전자기기
KR1020207020144A KR20200087876A (ko) 2017-08-28 2018-08-28 네거티브형 감광성 수지 조성물, 반도체 장치 및 전자기기
JP2019522344A JP6631752B2 (ja) 2017-08-28 2018-08-28 ネガ型感光性樹脂組成物、半導体装置および電子機器

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KR102135599B1 (ko) 2020-07-20
TW201917489A (zh) 2019-05-01
JP6870724B2 (ja) 2021-05-12
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KR20200027032A (ko) 2020-03-11
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