[go: up one dir, main page]

WO2019042559A1 - Composant optoélectronique - Google Patents

Composant optoélectronique Download PDF

Info

Publication number
WO2019042559A1
WO2019042559A1 PCT/EP2017/071922 EP2017071922W WO2019042559A1 WO 2019042559 A1 WO2019042559 A1 WO 2019042559A1 EP 2017071922 W EP2017071922 W EP 2017071922W WO 2019042559 A1 WO2019042559 A1 WO 2019042559A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
converter
optoelectronic
barrier layer
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2017/071922
Other languages
English (en)
Inventor
Ee Lian LEE
Chun Siang LAU
Rajah Prakash
Manfred Scheubeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to PCT/EP2017/071922 priority Critical patent/WO2019042559A1/fr
Publication of WO2019042559A1 publication Critical patent/WO2019042559A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Definitions

  • the invention refers to an optoelectronic component and a production method thereof.
  • Optoelectronic components may comprise a carrier with a semi ⁇ conductor chip placed on top of that carrier.
  • the semiconduc- tor chip may be an optoelectronic semiconductor chip, for example a light emitting diode or a diode laser.
  • An optically active layer may be arranged on top of the optoelectronic semiconductor chip or adjacent to the optoelectronic semicon ⁇ ductor chip.
  • the optically active layer may be a converter layer or a reflecting layer.
  • the converter layer may be placed on top of the optoelectronic semiconductor chip and may be used to convert light emitted by the semiconductor chip to another wavelength.
  • a transparent cover layer may be used to cover the semiconductor chip and the converter layer.
  • the transparent cover layer may work as an optical element.
  • the reflecting layer may be arranged adjacent to the optoe ⁇ lectronic semiconductor chip.
  • the barrier layer comprising silicon dioxide is mechanically stable and therefore increasing the mechanical stability of the optoelectronic component.
  • a thickness of the barrier layer is be ⁇ tween 0.5 and 100 microns, particularly between 0.5 and 20 microns. Within this thickness range, the mechanical proper ⁇ ties of the optoelectronic component are increased.
  • One occurring disadvantage of an optoelectronic component may be that cracks may occur within the converter layer, which subsequently propagate to the transparent cover layer. There ⁇ fore, the lifetime of the optoelectronic component is reduced as the cracks impair the optical properties of the optoelec- tronic component.
  • the optoelectronic component comprises a converter layer as optically active layer and a transparent cover layer.
  • the optoelectronic chip is mounted on top of the carrier.
  • the converter layer is arranged above the optoelec ⁇ tronic chip.
  • the converter layer may convert light emitted from the optoelectronic chip to another wavelength.
  • the transparent cover layer is arranged on top of the converter layer and thusly also on top of the optoelectronic semicon- ductor chip.
  • the barrier layer is arranged between the converter layer and the transparent cover layer. This barrier layer comprises silicon dioxide. Due to the barrier layer between the converter layer and the transparent cover layer, cracks occurring within the convert ⁇ er layer cannot propagate to the transparent cover layer.
  • the silicon dioxide within the barrier layer may be amorphous silicon dioxide or glass.
  • Another al ⁇ ternative is monocrystalline silicon dioxide.
  • the converter layer comprises a silicone based first matrix material with converter particles.
  • Con ⁇ verter layers formed by these materials are easily accessible and easily producible.
  • the barrier layer is made of oxidized sil ⁇ icone. Therefore, the silicone based first matrix material of the converter layer may be oxidized to silicon dioxide to form a barrier layer. Therefore, the forming of the barrier layer is easily achievable.
  • the thickness of the converter layer is within the range between 2 and 80 microns. Within this thick ⁇ ness range, the converter layer may be able to convert all the light emitted from the optoelectronic semiconductor chip to another wavelength. Therefore, the barrier layer may comprise a thickness of up to 25 % of the thickness of the con- verter layer. In one embodiment, the thickness of the barrier layer is be ⁇ tween 20 and 100 microns. The converter layer comprises a thickness within the range of 50 to 300 microns. In one embodiment, the transparent cover layer comprises a silicone. Transparent cover layers comprising a silicone are easily producible and therefore suitable for optoelectronic components . In one embodiment, the transparent cover layer is formed as an optical element. This optical element may be a lens or a diffusion element.
  • the carrier is part of a housing.
  • This housing comprises a cavity.
  • the optoelectronic semiconductor chip, the converter layer and the barrier layer are arranged within the cavity. Subsequently, the cavity is filled by a material forming the transparent cover layer within the cavity.
  • the carrier is partly covered with a re ⁇ flecting layer.
  • a converter layer is arranged above the reflecting layer. This can be used to reflect light emitted from the optoelectronic semiconductor chip, leading to an increased light output of the optoelectronic component.
  • the reflecting layer comprises a second matrix material comprising reflecting particles.
  • These re ⁇ flecting particles may be titanium dioxide particles. Titani- urn dioxide is suitable to form reflecting particles, as it has a white appearance and therefore leads to diffused re ⁇ flection of light emitted from the optoelectronic semiconduc ⁇ tor chip. Therefore, features of the carrier, like lead frames or other contact elements may be concealed by the re- fleeting layer.
  • One occurring disadvantage of an optoelectronic component may be that cracks occur within a reflecting layer adjacent to the optoelectronic chip. Therefore, oxygen from an area sur ⁇ rounding the optoelectronic device may propagate through the reflecting layer, leading to oxidation of inner parts of the optoelectronic component.
  • a reflecting layer as optically active layer covers the carrier at least partly.
  • the barrier layer comprising silicon dioxide on top of the reflecting layer prevents oxygen from reaching inner parts of the optoelec- tronic component.
  • the optoelectronic chip is attached to the carrier, particularly to a conductive region of the carrier, by a conductive adhesive.
  • the conductive adhesive may be sil- ver conductive paint or silver glue. As most conductive adhe- sives are vulnerable to oxygen due to oxidation processes, it is beneficial to prevent oxygen from reaching the conductive adhesive, utilizing the barrier layer on top of the reflect ⁇ ing layer.
  • the reflecting layer comprises a silicone based second matrix material with reflecting particles.
  • the barrier layer is made of oxidized sil ⁇ icone. Particularly the silicone based second matrix material may be oxidized to form the silicon dioxide of the barrier layer .
  • the reflecting particles comprise titanium dioxide particles. Titanium dioxide powder immersed within the second matrix material leads to a white reflecting layer, reflecting light of the visible spectrum.
  • the optoelectronic component comprises the barrier layer on top of the reflecting layer, a converter layer and a transparent cover layer. The converter layer is arranged on top of the optoelectronic chip. The transparent cover layer is arranged on top of the converter layer. Between the converter layer and the transparent cover layer another barrier layer is arranged. This other barrier also comprises silicon dioxide.
  • both the converter layer and the reflecting layer comprise a barrier layer with the advantages of the layers explained above.
  • the converter layer comprises a silicon based first matrix material with converter particles.
  • the other barrier layer is made of oxidized sili ⁇ cone .
  • the optoelectronic chip comprises a light emitting diode or a diode laser.
  • a carrier is provided.
  • an optoelectronic chip is mounted on top of the carrier.
  • a converter layer is deposited on top of the optoelectronic chip.
  • a barrier layer is formed.
  • the barrier layer comprises silicon dioxide.
  • a transparent cover layer is ar ⁇ ranged on top of the barrier layer.
  • the barrier layer is formed using an oxygen plasma.
  • a silicone based first matrix material comprising silicone is oxidized within the oxygen plasma, forming the silicon dioxide of the barrier layer.
  • the silicon dioxide thereby may be amorphous silicon dioxide, for in ⁇ stance glass.
  • the silicon dioxide may be mono- or polycrystalline silicon dioxide.
  • an optoelectronic component may also com- prise the initial step of providing a carrier. Subsequently, an optoelectronic chip is mounted on top of the carrier. A reflecting layer is deposited, partially covering the carri- er. A barrier layer is formed on top of the reflecting layer. Thereby, the barrier layer comprises silicon dioxide.
  • the reflecting layer comprises a silicon based second matrix material comprising reflecting particles, particularly titanium oxide particles.
  • the barrier layer is formed by an oxidation process of the second matrix material, forming the silicon dioxide of the barrier layer.
  • the silicon dioxide thereby may be amorphous silicon dioxide, for in ⁇ stance glass.
  • the silicon dioxide may be mono- or polycrystalline silicon dioxide
  • the oxidation process may be executed using a low-pressure oxygen plasma.
  • Low-pressure in this context means that the pressure of oxygen during the plasma application is well be- low atmospheric pressure, typically below 100 or even below 10 Pascal.
  • the low-pressure oxygen plasma comprises an oxygen flow in the range between 40 and 80 standard cubic centimeters per minute.
  • Standard cubic centimeter per minute in this context means that the amount of oxygen induced to a plasma chamber is similar to the amount of oxygen within a volume of one cubic centimeter at standard conditions (273.15 Kelvin and 1.0325 bar) per minute. Therefore one standard cu- bic centimeter of oxygen per minute corresponds to 1.429 mil ⁇ ligram of oxygen per minute.
  • a voltage is applied to two electrodes, typically above 100 volt up to several kilovolt. Due to the voltage, the oxygen is ionized forming positively charged oxygen ions and elec- trons . Therefore, a current flows between the electrodes.
  • a power of this current is within the range of 300 to 700 watt, and therefore such a power is applied to the oxygen plasma.
  • the oxygen plasma is applied for a time within the range of 150 to 450 seconds.
  • the silicon diox ⁇ ide is formed, leading to the improvement of the optoelec ⁇ tronic component as described above.
  • the oxygen flow is in the range between 45 and 55 standard cubic centimeters per minute
  • the power is within the range of 450 to 550 watt
  • the oxygen plasma is applied for a time within the range of 270 to 330 seconds.
  • the converter layer comprises a silicone based first matrix material with converter particles.
  • the barrier layer is formed by an oxidation process of the first matrix material due to the oxygen plasma.
  • the converter par ⁇ ticles may comprise a higher density than the first matrix material.
  • the converter particles sink within the first matrix material, leading to a higher concentration of converter par- tides adjacent to the optoelectronic chip within the con ⁇ verter layer.
  • a concentration of converter particles on the opposite site of the converter layer, opposite of the optoe ⁇ lectronic semiconductor chip may be smaller or even zero.
  • the first matrix material comprising silicone opposite of the optoelectronic semiconductor chip is oxidized forming silicon dioxide during the oxygen plasma step. Using this process, the barrier layer may easily be achieved.
  • the oxygen plasma may also be used to oxidize both the sili- con based first matrix material of the converter layer and the silicon based second matrix material of the reflecting layer in one oxidation step. Therefore, both reflecting layer and converter layer are deposited previous to the oxidation process due to the oxygen plasma.
  • the converter layer is de ⁇ posited using a spray coating process.
  • the transparent cover material is arranged by a mold process.
  • the case mold may be in the form of an optical element, leading to a transparent cover layer forming an optical element.
  • the carrier is part of a housing.
  • the housing comprises a cavity wherein the optoelec ⁇ tronic chip and the converter layer are arranged.
  • the barrier layer is formed within the cavity, for example by the oxygen plasma step.
  • the material of the transparent cover layer is inserted to the cavity to at least partially fill the cavity.
  • the material forming the transparent cover layer may also completely fill the cavity.
  • Fig. 1 a cross section through an optoelectronic
  • Fig. 2 a cross section of another optoelectronic
  • Fig. 3 a cross section of another optoelectronic
  • Fig. 4 a cross section of another optoelectronic
  • Fig. 9 a cross section of another optoelectronic
  • Fig. 11 a cross section of another optoelectronic
  • the thickness of the barrier layer 6 is within the range between 0.5 and 100 microns, particularly between 0.5 and 20 microns. In one embodiment, the thickness of the converter layer 4 is within the range between 2 and 80 microns. In one embodiment, the transparent cover layer 5 comprises a silicone.
  • Fig. 2 shows a cross section of another embodiment of an op ⁇ toelectronic component 1, comprising a carrier 2, an optoe ⁇ lectronic chip 3, a converter layer 4, a transparent cover layer 5 and a barrier layer 6.
  • the transparent cover layer 5 is formed as an optical element 7, in the embodiment of Fig. 2 as a lens.
  • the transparent cover layer 5 forming the opti ⁇ cal element 7 still covers the carrier 2, the optoelectronic chip 3, the converter layer 4 and the barrier layer 6.
  • the optical element 7 is formed as a convex lens. It is also possible that the optical element 7 forms a concave lens. Al ⁇ ternatively, the optical element 7 may be a diffusion ele ⁇ ment.
  • the transparent cover layer 5 com ⁇ prises diffusing particles to diffuse light emitted from the optoelectronic semiconductor chip 3.
  • Fig. 3 shows a cross section of an optoelectronic component 1, wherein the carrier 2 is part of a housing 8.
  • the housing 8 comprises a cavity 9, in which the optoelectronic chip 3, the converter layer 4 and the barrier layer 6 are arranged.
  • the transparent cover layer 5 is arranged within the cavity 9, fully filling the cavity 9.
  • the transparent cover layer 5 may also only fill the cavity 9 partially.
  • the transparent cover layer 6 may be forming an optical element comparable to the optical element 7 of Fig. 2 within the cav ⁇ ity 9 of Fig. 3.
  • the optoelectronic chip 3, the converter layer 4 and the barrier layer 6 are stacked on top of each other. It is also possible that the barrier layer 6 covers side portions of the converter layer 4.
  • the converter layer 4 extends to areas above the carrier 2, but not above the optoelectronic chip 3.
  • the con ⁇ verter layers 4 of Figs. 1 to 3 may also extend to areas above the carrier 2, but not above the optoelectronic chip 3, although no reflecting layer 10 is present in the embodiments of Figs. 1 to 4.
  • the reflecting layer 10 and the shape of the converter layer 4 and the barrier layer 6 may also be applied to the optoe ⁇ lectronic components 1 of Fig. 1 to 3.
  • the oxidation process may be executed using a low-pressure oxygen plasma.
  • Low-pressure in this context means that the pressure of oxygen during the plasma application is well be ⁇ low atmospheric pressure, typically below 100 or even below 10 Pascal.
  • the low-pressure oxygen plasma comprises an oxygen flow to a plasma chamber in the range between 40 and 80 standard cubic centimeters per minute.
  • a voltage is applied to two electrodes, typi- cally above 100 volt up to several kilovolt. Due to the volt ⁇ age, the oxygen is ionized forming positively charged oxygen ions and electrons. Therefore, a current flows between the electrodes. A power of this current is within the range of 300 to 700 watt, and therefore such a power is applied to the oxygen plasma.
  • the oxygen plasma is applied for a time within the range of 150 to 450 seconds.
  • Fig. 8 shows a cross section of an optoelectronic component 1 comprising a carrier 2 and an optoelectronic chip 3 mounted on top of the carrier 2.
  • a reflecting layer 10 is arranged adjacent to the optoelectronic chip 3, partially covering the carrier 2.
  • a barrier layer 6 comprising silicon dioxide is arranged on top of the reflecting layer 10, sealing the re ⁇ flecting layer 10 from the surroundings. Therefore, the inner parts of the optoelectronic component 1 are less prone to ox- idation.
  • Fig. 9 shows a cross section of another embodiment of an op ⁇ toelectronic component 1, largely similar to the optoelec ⁇ tronic component of Fig. 8.
  • the reflecting layer 10 in this embodiment fully covers the carrier 2.
  • the optoelectronic chip 3 is attached to the carrier 2, particularly to a conductive area of the carrier 2, by a conductive adhesive 14.
  • the conductive adhesive 14 may be silver conductive paint or silver glue.
  • the conductive adhesive 14 may be prone to oxi- dation, which may be prevented by the barrier layer 6, as ox ⁇ ygen from the surroundings is hindered from penetrating the reflecting layer 10 due to the barrier layer 6.
  • Fig. 10 shows a cross section of another embodiment of an op- toelectronic component 1, largely similar to the optoelec ⁇ tronic component of Figs. 8 and 9.
  • the reflecting layer 10 comprises a silicone based second matrix material 15 compris ⁇ ing reflecting particles 16.
  • the reflecting particles 16 may comprise titanium dioxide, particularly titanium dioxide pow- der.
  • the barrier layer 6 may be formed by an oxidation of the second matrix material.
  • the barrier layer 6 may comprise or be made of oxidized silicone.
  • Figs. 8 to 10 may comprise a transparent cover layer 5 similar to the transparent cover layers of Figs. 1 to 4.
  • Fig. 11 shows a cross section of an optoelectronic component 1 comprising a carrier 2 and an optoelectronic chip 3 mounted on top of the carrier 2. Adjacent to the optoelectronic chip 3, the carrier 2 is covered by a reflecting layer 10 with a barrier layer 6 as explained with regard to Figs. 8 to 10. Above the optoelectronic chip 3, a converter layer 4 is ar ⁇ ranged. On top of the converter layer 4, another barrier lay- er 17 is arranged. A transparent cover layer 5 is arranged on top of the converter layer 4. Therefore, the other barrier layer 17 is arranged between the converter layer 4 and the transparent cover layer 5.
  • the barrier layer 6 and the other barrier layer 17 comprise silicon dioxide.
  • the optoelectronic chip 3 comprises a light emitting diode or a diode laser.
  • Fig. 12 shows an intermediate step during a production of an optoelectronic component.
  • An optoelectronic chip 3 is mounted on top of a carrier 2.
  • a reflecting layer 10 has been deposited on top of the carrier 2, covering the carrier 2.
  • the reflecting layer 10 may only partially cover the carrier 2.
  • the reflecting layer 10 comprises a second matrix material 15 with reflecting particles 16.
  • other forms of reflecting layers 10 may be applicable.
  • a barrier layer 6 is formed on top of the reflecting layer 10. This formation of the barrier layer 6 may be performed using an oxygen plasma.
  • Another cross section of an intermediate product of this step is shown in Fig. 13.
  • the reflecting particles 16 comprise a higher density than the second matrix material 15.
  • the low-pressure oxygen plasma comprises an oxygen flow to a plasma chamber in the range between 40 and 80 standard cubic centimeters per minute.
  • a voltage is applied to two electrodes, typi- cally above 100 volt up to several kilovolt. Due to the volt ⁇ age, the oxygen is ionized forming positively charged oxygen ions and electrons. Therefore, a current flows between the electrodes. A power of this current is within the range of 300 to 700 watt, and therefore such a power is applied to the oxygen plasma.
  • the oxygen plasma is applied for a time within the range of 150 to 450 seconds.
  • the oxygen flow is in the range between 45 and 55 standard cubic centimeters per minute, the power is within the range of 450 to 550 watt, and the oxygen plasma is applied for a time within the range of 270 to 330 seconds.
  • the first matrix material 11 is silicone based. Therefore, during the oxygen plasma step, the silicone based first matrix material 11 is oxidized to silicon dioxide forming the barrier layer 6.
  • both a reflecting layer 10 and a converter layer 4 are deposited.
  • the converter layer 4 comprises a sil ⁇ icone based first matrix material 11 with converter particles 12 as described above.
  • the reflecting layer 10 comprises a silicone based second matrix material 15 with reflecting par ⁇ ticles 16 as described above. Subsequently, both matrix mate ⁇ rials are oxidized within an oxygen plasma as described above, leading to the barrier layer 6 and the other barrier layer 17 of Fig. 11.
  • the converter layer 4 is deposited using a spray coating process.
  • the transparent cover layer is arranged by a mold process.
  • the shape of the transparent cover layer 5 can be similar to Figs. 1 or 2.
  • the carrier 2 is part of a housing 8, wherein the housing 8 comprises a cavity 9.
  • the optoelectronic chip 3, the converter layer 4 and the barrier layer 6 are arranged or formed within the cavity 9.
  • the cavity 9 is filled with a material forming the transparent cover layer.
  • the cavity 9 may be fully or partially filled.
  • the cavity 9 may also be covered by a forming part of a mold case, and the material forming the transparent cover layer 5 may be molded into the cavity 9.

Landscapes

  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant optoélectronique comprenant un support, une puce optoélectronique et une couche optiquement active. La puce optoélectronique est montée sur une partie supérieure du support. Une couche barrière est disposée sur la couche optiquement active, qui comprend du dioxyde de silicium.
PCT/EP2017/071922 2017-08-31 2017-08-31 Composant optoélectronique Ceased WO2019042559A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2017/071922 WO2019042559A1 (fr) 2017-08-31 2017-08-31 Composant optoélectronique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2017/071922 WO2019042559A1 (fr) 2017-08-31 2017-08-31 Composant optoélectronique

Publications (1)

Publication Number Publication Date
WO2019042559A1 true WO2019042559A1 (fr) 2019-03-07

Family

ID=59887216

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2017/071922 Ceased WO2019042559A1 (fr) 2017-08-31 2017-08-31 Composant optoélectronique

Country Status (1)

Country Link
WO (1) WO2019042559A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024123425A1 (fr) * 2022-12-07 2024-06-13 Lumileds Llc Dispositif à del avec couche de protection et son procédé de fabrication

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008005936A1 (de) * 2008-01-24 2009-07-30 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
US20120007119A1 (en) * 2010-07-08 2012-01-12 Shin-Etsu Chemical Co., Ltd. Light-emitting semiconductor device, mounted substrate, and fabrication method thereof
US20160056349A1 (en) * 2013-04-05 2016-02-25 Osram Opto Semiconductors Gmbh Assembly that emits electromagnetic radiation and method of producing an assembly that emits electromagnetic radiation
US20160190410A1 (en) * 2013-08-08 2016-06-30 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the production thereof
EP3147956A1 (fr) * 2015-09-22 2017-03-29 Samsung Electronics Co., Ltd. Boîtier à del, unité de rétroéclairage et dispositif d'éclairage le comprenant et dispositif d'affichage à cristaux liquides
WO2017078399A1 (fr) * 2015-11-04 2017-05-11 엘지이노텍 주식회사 Élément électroluminescent et dispositif d'éclairage utilisant ce dernier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008005936A1 (de) * 2008-01-24 2009-07-30 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
US20120007119A1 (en) * 2010-07-08 2012-01-12 Shin-Etsu Chemical Co., Ltd. Light-emitting semiconductor device, mounted substrate, and fabrication method thereof
US20160056349A1 (en) * 2013-04-05 2016-02-25 Osram Opto Semiconductors Gmbh Assembly that emits electromagnetic radiation and method of producing an assembly that emits electromagnetic radiation
US20160190410A1 (en) * 2013-08-08 2016-06-30 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the production thereof
EP3147956A1 (fr) * 2015-09-22 2017-03-29 Samsung Electronics Co., Ltd. Boîtier à del, unité de rétroéclairage et dispositif d'éclairage le comprenant et dispositif d'affichage à cristaux liquides
WO2017078399A1 (fr) * 2015-11-04 2017-05-11 엘지이노텍 주식회사 Élément électroluminescent et dispositif d'éclairage utilisant ce dernier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024123425A1 (fr) * 2022-12-07 2024-06-13 Lumileds Llc Dispositif à del avec couche de protection et son procédé de fabrication

Similar Documents

Publication Publication Date Title
US10217915B2 (en) Optoelectronic semiconductor component
JP5824142B2 (ja) 光学要素、オプトエレクトロニクス部品、およびこれらの製造方法
EP2215667B1 (fr) Procédé de fabrication pour un boîter à del
EP2457267B1 (fr) Diode électroluminescente à réflecteurs et son procédé de fabrication
KR101620113B1 (ko) 광전 소자 및 광전 소자 제조 방법
TWI424538B (zh) 具備殼體的光電子裝置
US10622523B2 (en) Light-emitting diode and method of producing a light-emitting diode
EP3066698B1 (fr) Substrat avec une couche de reflexion totale contournant une diode électro-luminescente
US10854787B2 (en) Component having boundary element
JP2007311445A (ja) 半導体発光装置及びその製造方法
JP2012004303A (ja) 発光装置およびその製造方法
US10615323B2 (en) Component having a reflector and method of producing components
KR20120024951A (ko) 원격 인광체 층 및 반사성 서브마운트를 구비하는 ｌｅｄ
CN102598288A (zh) 用于制造带有承载衬底上的结构元件的布置的方法和布置以及用于制造半成品的方法和半成品
US10580941B2 (en) Optoelectronic semiconductor component
KR20190107046A (ko) 발광장치 및 그의 제조방법
CN110197867A (zh) 半导体发光器件及其制造方法
US11404611B2 (en) Production of a semiconductor device
WO2019042559A1 (fr) Composant optoélectronique
US11728321B2 (en) Optoelectronic component and manufacturing method
US11121287B2 (en) Method for producing an optoelectronic component, and optoelectronic component
US11616178B2 (en) Method for producing a plurality of radiation-emitting semiconductor devices with a screen for a screen printing process
US11430927B2 (en) Semiconductor light-emitting device and method for manufacturing the same
JP7317831B2 (ja) 変換素子を製造する方法および変換素子
KR101779084B1 (ko) 반도체 발광소자 구조물 및 반도체 발광소자 구조물을 제조하는 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17768034

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17768034

Country of ref document: EP

Kind code of ref document: A1