WO2018233840A1

WO2018233840A1 - Optoelectronic component

Info

Publication number: WO2018233840A1
Application number: PCT/EP2017/065452
Authority: WO
Inventors: Sok Gek Beh; Chee Weng SOONG; Mohd Fauzi ZAINORDIN; Teik Yee WONG
Original assignee: Osram Opto Semiconductors GmbH
Current assignee: Ams Osram International GmbH
Priority date: 2017-06-22
Filing date: 2017-06-22
Publication date: 2018-12-27
Anticipated expiration: 2019-12-22

Abstract

The invention refers to an optoelectronic component with a housing comprising an insulating material, a first metallic lead frame and a second metallic lead frame. The housing comprises a first cavity and a second cavity, wherein a first surface of the first lead frame is located at a first bottom of the first cavity and wherein a second surface of the second lead frame is located at a second bottom of the second cavity. A dividing wall is located between the first cavity and the second cavity. An optoelectronic chip is located on the first surface. A flow barrier is located at the first surface of the first lead frame between the optoelectronic chip and the dividing wall. A first bond wire is connected to a first contact of the optoelectronic chip and to the second lead frame. An electrical element is located within the second cavity, wherein a second bond wire is connected to a second contact of the electrical element and to the first lead frame. The second cavity is at least partially filled with a matrix material containing reflecting particles. Apart of the first bottom of the first cavity between the flow barrier and the dividing wall is at least partially covered with the matrix material containing reflecting particles.

Description

OPTOELECTRONIC COMPONENT

DESCRIPTION The invention refers to an optoelectronic component and a production method thereof.

Optoelectronic components may comprise an electrical element additionally to an optoelectronic chip. This electrical ele- ment may be an ESD protection device or a control unit. As this electrical element can deteriorate the optical proper^¬ ties of the optoelectronic component, the electrical element may be concealed using a matrix material containing reflect^¬ ing particles. Furthermore, lead frames used to contact the optoelectronic chip and the electrical element may also be covered with the matrix material containing reflecting particles to hide them from view. A main disadvantage of this ap^¬ proach is that the matrix material containing the reflective particles is displaced within the optoelectronic component in a way that the matrix material touches the optoelectronic semiconductor chip. Therefore, the optical features of the optoelectronic chip may be compromised.

An assignment of the invention is to provide an improved op- toelectronic component, in which the optical properties of the optoelectronic chip are not compromised by a matrix mate^¬ rial containing reflecting particles. Another assignment of the invention is to provide a production method of such an optoelectronic component.

The solution of these assignments is disclosed in the inde^¬ pendent claims of this invention. Preferred embodiments are disclosed in the dependent claims. An optoelectronic component comprises a housing, which com^¬ prises an insulating material, a first metallic lead frame and a second metallic lead frame. The housing comprises a first cavity and a second cavity. A first surface of the first lead frame is located at a first bottom of the first cavity. A second surface of the second lead frame is located at a second bottom of the second cavity. A dividing wall is located between the first cavity and the second cavity. An optoelectronic chip is located on top of the first lead frame. A flow barrier is located at the first surface of the first lead frame between the optoelectronic chip and the di^¬ viding wall. A first bond wire is connected to a first con^¬ tact on top of the optoelectronic chip and to the second lead frame. An electrical element is located within the second cavity and connected with a second bond wire to the first lead frame, using a second contact of the electrical element. The second cavity is at least partially filled with a matrix material containing reflecting particles. The first bottom of the first cavity between the flow barrier and the dividing wall is at least partially covered with the matrix material containing reflecting particles.

The flow barrier prevents the matrix material containing re- fleeting particles from touching the optoelectronic chip.

Therefore, the optical properties of the optoelectronic chip is not influenced by the matrix material containing reflect^¬ ing particles. The second cavity containing the electrical element may be filled with the matrix material containing re- fleeting particles in a way that the electrical element is completely covered by the matrix material containing reflect^¬ ing particles.

In one embodiment of the invention, the electrical element comprises an ESD protection device or a control unit. ESD protection devices may be used to prevent destruction of the optoelectronic chip. Control units may be used to control the voltage or current applied to the optoelectronic chip. In one embodiment of the invention, the flow barrier is formed by a rough surface portion, wherein the roughness of the rough surface portion is greater than the roughness of the first surface of the first lead frame. Rough surface por- tions on the first surface may act as a flow barrier, as ma^¬ trix material containing reflecting particles immersed to the first cavity creeps over the first surface due to its viscos^¬ ity and a surface tension between matrix material and first surface, but is stopped by the rough surface portion forming the flow barrier, where the surface tension differs. There^¬ fore, the matrix material containing reflecting particles can cover the first lead frame to improve the optical properties of the component, but is prevented from covering the optoe- lectronic chip and therefore the optical properties of the optoelectronic chip are not disturbed by the matrix material containing reflecting particles.

In one embodiment of the invention, the width of the rough surface portion is between 80 and 250 microns. Widths of the rough surface portions between 80 and 250 microns lead to a stopping of the creeping of matrix material containing reflecting particles and therefore lead to improved optical properties of the optoelectronic component.

In one embodiment of the invention, the flow barrier is formed by a trench within the first surface. This trench within the first surface leads to a stopping of the creeping of the matrix material with the reflective particles to the optoelectronic chip.

In one embodiment, the trench is between 80 and 250 microns wide. In one embodiment, the trench is between 80 and 250 mi^¬ crons deep.

In one embodiment of the invention, the flow barrier is formed by a layer on top of the first surface. This layer may be realized in a way that stops the creeping of the matrix material to the optoelectronic chip. The layer may comprise a material placed on top of the first surface.

In one embodiment of the invention, the flow barrier is arranged circumferentially around the optoelectronic chip. This may apply to the rough surface portion, the trench or the layer forming the flow barrier. If the flow barrier is arranged circumferentially around the optoelectronic chip, the matrix material containing reflective particles is hindered from reaching the optoelectronic chip.

In one embodiment, an upper side of the electrical element is arranged at a lower height than an upper side of the dividing wall. The upper side of the electrical element is covered by the matrix material. When the upper side of the electrical element is lower than the upper side of the dividing wall, the second cavity may be filled to a plane defined by the up^¬ per side of the dividing wall. Therefore, the electrical ele^¬ ment is fully covered by the matrix material.

In one embodiment, the reflecting particles contain titanium dioxide. Titanium dioxide is a material, which is widely used to lead to a whitish appearance of optoelectronic components. A powder of titanium dioxide may be immersed to the matrix material. The matrix material may comprise a silicone. Tita^¬ nium dioxide, particularly as a powder, immersed to a matrix material, can be used to form a reflective material, espe^¬ cially one with a white appearance. In one embodiment, the dividing wall comprises a recess form^¬ ing a spilling trench. The spilling trench is at least partially filled with the matrix material. The matrix material within the first cavity, the second cavity and the spilling trench is formed in one piece. The matrix material with the reflecting particles is filled into the second cavity to cov^¬ er the electrical element, in a way that the volume is great^¬ er than the volume of the second cavity. Therefore, excess matrix material spills through the spilling trench into the first cavity and covers parts of the first surface of the first lead frame between the flow barrier and the dividing wall. Therefore, the matrix material may be applied to the optoelectronic component within one production step. In one embodiment, the first bond wire and the second bond wire are guided through the recess of the dividing wall.

Therefore, the height of the optoelectronic component may be reduced .

In one embodiment, the first cavity is filled with a silicone based material, particularly with a converter immersed within silicone. The silicone based material can be used to protect the optoelectronic chip from the surroundings. Additionally, the silicone based material can comprise converter particles. The converter particles are capable of converting light emit^¬ ted from the optoelectronic chip to another wavelength.

In one embodiment of the invention, the first bond wire and the second bond wire are guided above the dividing wall. In one embodiment of the invention, the housing comprises side walls, which are higher than the dividing wall.

A method of producing an optoelectronic component starts with the providing of a housing comprising an insulating material with a first lead frame and a second lead frame. The housing comprises a first cavity and a second cavity. A first surface of the first lead frame is located at a first bottom of the first cavity and a second surface of the second lead frame is located at a second bottom of the second cavity. A dividing wall is located between the first cavity and the second cavi^¬ ty. In another step of the production method, a flow barrier is formed on the first surface. Part of the flow barrier is between the dividing wall and a placing area of the first lead frame.

In another step of the production method, an optoelectronic chip is placed onto the placing area of the first lead frame. In another step of the production method, an electrical ele- ment is placed within the second cavity. In another produc^¬ tion step, a first contact of the optoelectronic chip is con^¬ nected with the second lead frame using a first bond wire. In another step of the production method, a second contact of the electrical element is connected with the first lead frame using a second bond wire.

In another production step, a first pre-defined amount of a matrix material containing reflecting particles is inserted within the second cavity. Subsequently, a second pre-defined amount of a matrix material containing reflecting particles is inserted within the first cavity to cover the first sur^¬ face between the flow barrier and the dividing wall at least partially.

In one embodiment of the production method, the flow barrier is formed on the first surface of the first lead frame. Sub^¬ sequently, the lead frames are arranged within a casting mold, and subsequently the housing is formed by a molding process .

In one embodiment, the dividing wall comprises a recess form^¬ ing a spilling trench. Both the first and the second pre- defined amount of the matrix material are inserted to the second cavity in such a way, that the second cavity is filled with the first pre-defined amount of the matrix material and the second pre-defined amount of the matrix material spills through the spilling trench into the first cavity, covering at least a part of the first surface of the first lead frame between the flow barrier and the dividing wall.

In one embodiment, the flow barrier is arranged circumferen- tially around the placing area.

In one embodiment, the flow barrier is a trench within the first surface. The trench is formed via etching, laser abla^¬ tion or stamping. In one embodiment, the flow barrier comprises a rough surface portion of the first surface. The rough surface portion is formed via etching or laser scrib^¬ ing . The above described properties, features and advantages of this invention as well as the method of obtaining them, will be more clearly and obviously understandable in the context of the following description of the embodiments, which are explained in more detail in the context of the Figures.

In schematic illustration show

Fig. 1 a top view of an optoelectronic component;

Fig. 2 a cross-section of an optoelectronic component;

Fig. 3 a top view of an optoelectronic component; Fig. 4 a cross-section of an optoelectronic component;

Fig. 5 a top view of an optoelectronic component;

Fig. 6 a cross-section of an optoelectronic component;

Fig. 7 a cross-section of an optoelectronic component;

Fig. 8 a cross-section of an optoelectronic component; Fig. 9 an isometric view of an optoelectronic component; and

Fig. 10 a cross-section of an optoelectronic component.

Fig. 1 shows an optoelectronic component 100 with a housing 101 comprising an insulating material. Within the housing, a first metallic lead frame 102 and a second metallic lead frame 103 are arranged. The housing comprises a first cavity 104 and a second cavity 105, separated by a dividing wall 110. A first surface 106 of the first lead frame 102 is lo- cated at the bottom 108 of the first cavity 104. A second surface 107 of the second lead frame 103 is located at a sec^¬ ond bottom 109 of the second cavity 105. An optoelectronic chip 120 is located on top of the first surface 106. A first bond wire 141 connects a first contact 121 of the optoelec^¬ tronic chip with the second lead frame 103. An electrical el^¬ ement 130 is located within the second cavity 105. A second bond wire 142 is connected to a second contact 131 of the electrical element 130 and to the first lead frame 102. The first lead frame 102 comprises a flow barrier 111, formed by a rough surface portion 112 of the first surface 106 of the first lead frame 102. Regarding the optoelectronic component 100 of Fig. 1, the electrical element 130 and the lead frames 102, 103 are visible from the top. To enhance the optical properties of the optoelectronic component, the second cavity 105 and parts of the first cavity 104 between the flow barri^¬ er 111 and the dividing wall 110 may be filled with a matrix material containing reflecting particles to enhance the opti- cal properties by hiding the features of the electrical ele^¬ ment 130, the second lead frame 103 and parts of the first lead frame 102. Therefore, fig. 1 shows an intermediate step during a production of the optoelectronic component 100, be^¬ fore the electrical element 130, the second lead frame 103 and parts of the first lead frame 102 are hidden by a matrix material containing reflective particles.

Fig. 2 shows a cross-section of an optoelectronic component 100, which is equivalent to the optoelectronic component 100 of Fig. 1, after a matrix material 150 with reflecting particles has been applied to the optoelectronic component 100. The second cavity 105 is partially filed with the matrix ma^¬ terial 150 containing reflecting particles. In this context, partially filled means that an upper level of the matrix ma- terial 150 does not reach an upper level of the dividing wall 110. Within the first cavity 104, between the dividing wall 110 and the flow barrier 111, the first bottom 108 is partially covered with the matrix material 150 as well. With the matrix material 150 containing reflecting particles, the op- tical properties of the electronic component are enhanced by hiding the electrical element 130 as well as the second lead frame 103 and parts of the first lead frame 102. The flow barrier 111 of the embodiment of Figs. 1 and 2 is linearly arranged between the optoelectronic chip 120 and the dividing wall 110. The first surface 106 of the first lead frame 102 covers parts of the first bottom 108 of the first cavity 104. The second surface 107 of the second lead frame 103 covers parts of the bottom 109 of the second cavity 105. Fig. 3 shows another top view of an optoelectronic component 100 with mainly the same features as the optoelectronic com^¬ ponent of Fig. 1, again without matrix material containing reflective particles. The first surface 106 of the first met^¬ al lead frame 102 covers the whole bottom 108 of the first cavity 104. The second surface 107 of the second lead frame 103 covers the whole second bottom 109 of the second cavity 105. Fig. 3 shows an intermediate step during a production of the optoelectronic component 100, before the electrical ele^¬ ment 130, the second lead frame 103 and parts of the first lead frame 102 are hidden by a matrix material containing re^¬ flective particles.

In one embodiment, the electrical element 130 comprises an ESD protection device or a control unit. ESD protection de- vices are used to protect the optoelectronic chip 120 from voltages and currents destroying the optoelectronic chip 120. If the electrical element 130 comprises a control unit, the electrical element 130 can be used to control the light out^¬ put of the optoelectronic chip 120.

In one embodiment, the width of the rough surface portion 112 forming the flow barrier 111 is between 80 and 250 microns.

Fig. 4 shows a cross-section of an optoelectronic component 100 which is mainly identical to the optoelectronic component of Fig. 3. The first lead frame 102 and the second lead frame 103 cover the first bottom 108 and the second bottom 109 of the first cavity 104 and the second cavity 105 respectively. The flow barrier 111 comprises a layer 114, which is arranged on the first surface 106 of the first lead frame 102. This layer 114 acts as a barrier for the matrix material 150 containing reflecting particles.

Fig. 5 shows a top view of another optoelectronic component 100, which is mainly identical to the optoelectronic compo^¬ nents of Figs. 1 and 3, again without matrix material con^¬ taining reflective particles. The first lead frame 102 covers the first bottom 108 of the first cavity 104. The second sur^¬ face 107 of the second lead frame 103 only partially covers the second bottom 109 of the second cavity 105. The flow bar^¬ rier 111 is formed by a trench 113. The optoelectronic chip 120 is placed in a way on the first lead frame 102, that the trench 113 circumferentially surrounds the optoelectronic chip 120.

It is also possible, that the flow barriers formed by a rough surface portion 112 or by a layer 114 are circumferentially arranged around the optoelectronic chip 120. On the other hand, the linear flow barrier 111, as shown in Figs. 1 and 3, may also be formed by a trench 113.

In one embodiment, the width of the trench is between 80 and 250 microns. In one embodiment, the depth of the trench 113 is between 80 and 250 microns.

The optoelectronic component 100 of Fig. 5 additionally com^¬ prises a recess 115 within the dividing wall 110, forming a spilling trench. This recess 115 is optional and may be omit^¬ ted .

Fig. 6 shows a cross-section of the optoelectronic component 100 of Fig. 5. The cross-section is in a plane through the recess 115 of the dividing wall 110. A matrix material 150 is filled within the second cavity 105 in a way that the matrix material 150 spills through the recess 115 forming the spill^¬ ing trench and into the first cavity 104. In the first cavity 104, the matrix material 150 is stopped by the flow barrier 111 formed by the trench 113. Therefore, the matrix material 150 does not reach the optoelectronic chip 120, but covers more or less most of the first surface 106 of the first lead frame 102.

In all embodiments of Figs. 1 to 6, the first cavity 104 may be filled with a silicone based material, particularly with a converter immersed within silicone. The material may fill the whole housing 101 of the optoelectronic component 100, or the first cavity 104 and the housing 101 above the second cavity 105 may be partially filled.

In one embodiment, the reflecting particles contain titanium dioxide. The matrix material 150 may comprise silicone.

Fig. 7 shows a cross-section through the optoelectronic component 100 of Figs. 5 and 6, this time through a plane through the dividing wall 110. In the middle of the dividing wall 110, the recess 115 forms the spilling trench and is filled with the matrix material 150. Above the dividing wall 110 the first bond wire 141 and the second bond wire 142 are arranged. The dividing wall 110 and the housing 101 in Fig. 7 are made of different materials. Alternatively, it is also possible, that the housing 101 and the dividing wall 110 are integrally formed in one piece.

The height of the electrical element 130 may be in the range of 0.2 to 0.3 millimeter. The height of the dividing wall 110 may be in the range of 0.4 to 0.6 millimeter, enabling the matrix material 150 within the second cavity 105 to fully cover the electrical element 130.

Fig. 8 shows another cross-section of an optoelectronic com- ponent 100, in which the dividing wall 110 is separated in outer portions 116 and an inner portion 117. In the outer portions 116, the dividing wall 110 is as high as surrounding walls 118 of the housing 101. A recess 115 forms a spilling trench in the inner portion 117, leading to a broad spilling trench 115 in the inner portion 117 of the dividing wall 110. The first bond wire and the second bond wire 141, 142 are guided through the recess 115 and thus guided lower than the height of the dividing wall 110 in the outer parts 116. The matrix material 150 is arranged at the bottom of the spilling trench 115 below the bond wires 141, 142.

Fig. 9 shows an isometric view of an optoelectronic component 100 with a dividing wall 110 formed like shown in Fig. 8. The bond wires 141, 142 are guided through the recess 115 and be^¬ low the upper surface of the optoelectronic component 100. The electrical element 130 is placed within the second cavity 105.

Fig. 10 shows a cross-section of the embodiment of Fig. 9, in which the second cavity has been filled with a predefined amount of matrix material 150 containing reflecting particles. The matrix material 150 spills through the spilling trench 115 and creeps into the first cavity 104, only stopped by the flow barrier 111, formed by rough surface portions 112 around the optoelectronic chip 120. Therefore, the second cavity 105 with the (in Fig. 10 not shown) electrical element 130, the first lead frame 102 and the second lead frame 103 are almost completely covered by the matrix material 150.

Therefore the optical features of the electrical element 130, and the lead frames 102, 103 are no longer visible from the top. The remaining portion of the housing 101 above the ma^¬ trix material 150 and the optoelectronic chip 120 may be filled with a transparent material, a silicone, or a convert^¬ er immersed within a silicone.

The shape of the matrix material 150 containing reflective particles in fig. 10 is determined by the viscosity of the matrix material 150 and the surface tension between the ma^¬ trix material 150 and the housing 101. The distance from the first lead frame 102 to the second lead frame 103 is in the range of 0.2 to 0.3 millimeter. The height of the dividing wall 110 at the inner part 117, as displayed in Fig. 10, is 50 microns. The height of the elec- trical element 130 is in the range of 0.2 to 0.3 millimeters. Therefore, the height of the dividing wall 110 at the outer parts 116 is in the range of 0.4 to 0.6 millimeter.

To produce an optoelectronic component of Figs. 1 to 10, a housing 101 comprising an insulating material with a first lead frame 102 and a second lead frame 103 is provided. The housing 101 comprises a first cavity 104 and a second cavity 105 with a first surface 106 of the first lead frame 102 lo^¬ cated at a first bottom 108 of the first cavity 104 and a second surface 107 of the second lead frame 103 located at a second bottom 109 of the second cavity 105. A dividing wall 110 is located between the first cavity 104 and the second cavity 105. On the first surface 106, a flow barrier 111 is formed. A part of the flow barrier 111 is between the divid- ing wall 110 and a placing area, intended for placing an op^¬ toelectronic chip.

The flow barrier 111 may be formed on the first surface after the forming of the housing 101, or the flow barrier 111 may be formed on the first lead frame 102, and subsequently the first lead frame 102 and the second lead frame 103 are molded into the housing 101.

Within the placing area, an optoelectronic chip 120 is placed. An electrical element 130 is placed within the second cavity. The optoelectronic chip 120 and the electrical ele^¬ ment 130 are connected with the first lead frame 102 and the second lead frame 103 respectively, using bond wires 141, 142 as described in the embodiments in Figs. 1 to 10. Figs. 1, 3 and 5 show the optoelectronic component 100 after the de^¬ scribed steps. A first pre-defined amount of matrix material 150 containing reflecting particles is inserted within the second cavity 105. A second pre-defined amount of matrix material 150 con^¬ taining reflecting particles is inserted within the first cavity 104 to cover the first bottom 108 at the first surface 106 of the first lead frame 102 at least partially.

If the dividing wall 110 comprises a spilling trench 115, as shown in Figs. 5 to 10, the first pre-defined amount of ma- trix material 150 and the second pre-defined amount of matrix material 150 may both be inserted into the second cavity 105, leading to a spilling of the excess amount of matrix material 150 through the spilling trench 115 to the first cavity 104. The flow barrier 111 may be formed as a rough surface portion 112 of the first surface 102. The rough surface portion 112 may be formed via etching or laser scribing. The flow barrier 111 may be formed as a trench 113 protruding from the first surface of the first lead frame. The trench 113 may be formed via etching, laser ablation or stamping.

The flow barrier 111 may also be formed by a trench 130, wherein the bottom of the trench comprises a rough surface portion 112.

The optoelectronic chip 120 may comprise a light emitting di^¬ ode (LED) or a diode laser.

Although the invention was described and illustrated in more detail using preferred embodiments, the invention is not lim^¬ ited to these. Variants of the invention may be derived by a person skilled in the art from the described embodiments without leaving the scope of the invention. REFERENCE NUMERALS

100 optoelectronic component

101 housing

102 first lead frame

103 second lead frame

104 first cavity

105 second cavity

106 first surface

107 second surface

108 first bottom

109 second bottom

110 dividing wall

111 flow barrier

112 rough surface portion

113 trench

114 layer

115 recess

116 outer part

117 inner part

118 surrounding wall

120 optoelectronic chip

121 first contact

130 electrical element

131 second contact

141 first bond wire

142 second bond wire

150 matrix material

Claims

An optoelectronic component (100) with a housing (101) comprising an insulating material, a first metallic lead frame (102) and a second metallic lead frame (103), wherein the housing (101) comprises a first cavity (104) and a second cavity (105), wherein a first surface (106) of the first lead frame (102) is located at a first bot^¬ tom (108) of the first cavity (104), wherein a second surface (107) of the second lead frame (103) is located at a second bottom (109) of the second cavity (105), wherein a dividing wall (110) is located between the first cavity (104) and the second cavity (105), wherein an optoelectronic chip (120) is located on the first sur^¬ face (106), wherein a flow barrier (111) is located at the first surface (106) of the first lead frame (102) be^¬ tween the optoelectronic chip (120) and the dividing wall (110), wherein a first bond wire (141) is connected to a first contact (121) of the optoelectronic chip (120) and to the second lead frame (103), wherein an electrical el^¬ ement (130) is located within the second cavity (105), wherein a second bond wire (142) is connected to a second contact (131) of the electrical element (130) and to the first lead frame (102), wherein the second cavity (105) is at least partially filled with a matrix material (150) containing reflecting particles, wherein a part of the first bottom (108) of the first cavity (104) between the flow barrier (111) and the dividing wall (110) is at least partially covered with the matrix material (150) containing reflecting particles.

The optoelectronic component (100) of claim 1, wherein the electrical element (130) comprises an ESD protection device or a control unit.

The optoelectronic component (100) of any of the preced- ing claims, wherein the flow barrier (111) is formed by a rough surface portion (112), and wherein the roughness of the rough surface portion (112) is greater than the roughness of the first surface (106) .

The optoelectronic component (100) of claim 3, wherein a width of the rough surface portion (112) is between 80 and 250 microns.

The optoelectronic component (100) of any of the claims 1 or 2, wherein the flow barrier (111) is formed by a trench (113) within the first surface (106) .

The optoelectronic component (100) of any of the claims 1 or 2, wherein the flow barrier (111) is formed by a layer (114) on top of the first surface (106) .

The optoelectronic component (100) of any of the preced^¬ ing claims, wherein the flow barrier (111) is arranged circumferentially around the optoelectronic chip (120).

The optoelectronic component (100) of any of the preced^¬ ing claims, wherein an upper side of the electrical ele^¬ ment (130) is arranged at a lower height than an upper side of the dividing wall (110), and wherein the upper side of the electrical element (130) is covered by the matrix material (150) .

The optoelectronic component (100) of any of the preced^¬ ing claims, wherein the reflecting particles contain titanium dioxide.

The optoelectronic component (100) of any of the preced^¬ ing claims, wherein the dividing wall (110) comprises a recess (115) forming a spilling trench, wherein the spilling trench is at least partially filled with the ma^¬ trix material (150) and wherein the matrix material (150) within the first cavity (104), the second cavity (105) and the spilling trench is formed in one piece. The optoelectronic component (100) of claim 10, wherein the first bond wire (141) and the second bond wire (142) are guided through the recess (115) of the dividing wall (110) .

A method of producing an optoelectronic component (100) comprising the steps:

- Providing of a housing (101) comprising an insulating material with a first lead frame (102) and a second lead frame (103), wherein the housing (101) comprises a first cavity (104) and a second cavity

(105), wherein a first surface (106) of the first lead frame (102) is located at a first bottom (108) of the first cavity (104), wherein a second surface

(107) of the second lead frame (103) is located at a second bottom (109) of the second cavity (105), wherein a dividing wall (110) is located between the first cavity (104) and the second cavity (105);

- Forming of a flow barrier (111) on the first surface (106), wherein a part of the flow barrier (111) is between the dividing wall (110) and a placing area;

- Placing of an optoelectronic chip (120) onto the placing area;

- Placing of an electrical element (130) within the second cavity (105);

- Connecting of a first contact (121) of the optoe^¬ lectronic chip (120) with the second lead frame (103) using a first bond wire (141);

- Connecting of a second contact (131) of the elec^¬ trical element (130) with the first lead frame (102) using a second bond wire (142);

- Inserting of a first pre-defined amount of a matrix material (150) containing reflecting particles within the second cavity (105);

- Inserting of a second pre-defined amount of a ma^¬ trix material (150) containing reflecting particles within the first cavity (104) to cover the first surface (106) between the flow barrier (111) and the dividing wall (110) at least partially.

13. The method of claim 12, wherein the flow barrier (111) is formed on the first surface (106) of the first lead frame (102), wherein subsequently the lead frames are arranged within a casting mold, and subsequently the housing (101) is formed by a molding process.

14. The method of any of claims 12 or 13, wherein the divid^¬ ing wall (110) comprises a recess (115) forming a spill^¬ ing trench and wherein both the first and the second pre^¬ defined amount of the matrix material (150) are inserted to the second cavity (105) in such a way, that the second cavity (105) is filled with the first pre-defined amount of the matrix material (150) and the second pre-defined amount of the matrix material (150) spills through the spilling trench into the first cavity (104), covering at least a part of the first surface (106) of the first lead frame (102) between the flow barrier (111) and the dividing wall (110) .

15. The method of any of claims 12 to 14, wherein the flow barrier (111) is arranged circumferentially around the placing area.