WO2018219771A1 - Optoelectronic semiconductor module - Google Patents

Abstract

In one embodiment, an optoelectronic semiconductor module (1) comprises a semiconductor emitter (2) for generating radiation and comprises a current regulating unit (3). When viewed from above, the semiconductor emitter (2) and the current regulating unit (3) have a distance (D) from each other of a central diagonal length (G) of the semiconductor emitter (2) at most. The semiconductor emitter (2) and the current regulating unit (3) are firmly and cohesively integrated in the semiconductor module (1) by mechanical means.

Description

description

OPTOELECTRONIC SEMICONDUCTOR MODULE

An optoelectronic semiconductor module is specified.

An object to be solved is to provide an optoelectronic semiconductor module, which has an enlarged

Operating parameter range away safely operable.

This object is achieved inter alia by an optoelectronic semiconductor module having the features of patent claim 1. Preferred developments are the subject of the dependent claims.

In accordance with at least one embodiment, this is

Optoelectronic semiconductor module designed as a module. This means in particular that the semiconductor module

modular manner can be combined with other semiconductor modules or other components.

According to at least one embodiment, this includes

Semiconductor module one or more semiconductor emitter. The at least one, preferably exactly one semiconductor emitter is set up to generate radiation. The radiation is, for example, near ultraviolet radiation with a maximum intensity wavelength in the range of 360 nm to 410 nm or visible light with a maximum in the range of 410 nm to 700 nm or near-infrared radiation with a maximum in the region of 700 nm to 1.5 ym.

For example, the semiconductor emitter has exactly one

Emission range on which to generate the radiation is provided. In other words, the semiconductor emitter is not subdivided or pixelated into a plurality of independently operable emitter units. In accordance with at least one embodiment, the semiconductor emitter is a laser diode, in short LD. Alternatively, the semiconductor emitter can be designed as a light-emitting diode, in short LED.

According to at least one embodiment, this includes

Semiconductor module one or more current control units. The at least one current control unit is set up to regulate, in particular limit, a current through the associated semiconductor emitter. It is the

Current control unit to the semiconductor emitter electrically connected in series or electrically in parallel. Preferably, there is a 1: 1 assignment between the current control unit and the semiconductor emitter. Are multiple semiconductor emitter and / or

Current control units present, so there is preferably a one-to-one assignment of the semiconductor emitter and the current control units.

In accordance with at least one embodiment, this provides

Semiconductor module is a separately manageable electrical and preferably also mechanical component. In particular, the semiconductor emitter and the current control unit are permanently integrated mechanically and coherently in the semiconductor module. According to at least one embodiment, the

 Semiconductor emitter and the flow control unit seen in plan view arranged close to each other. this means

in particular, that seen in plan view a distance between the semiconductor emitter and the associated current control unit is at most the simple average diagonal length of the semiconductor emitter. Preferably, this distance is at most 50% or 25% of the average diagonal length. Alternatively or additionally, this distance is at most the smallest edge length of the semiconductor emitter and / or the current control unit, seen in plan view. Furthermore, the distance can be that it is at most 100 ym or 50 ym or 30 ym. It is possible that the distance is zero, in particular if the semiconductor emitter and the current control unit seen in plan view overlap each other or are arranged congruently. Otherwise, this distance may also be at least 5 ym or 10 ym. In at least one embodiment, this includes

Optoelectronic semiconductor module, a semiconductor emitter for generating radiation and a current control unit. Of the

Semiconductor emitter and the current control unit point in

Top view seen at a distance from each other of at most a mean diagonal length of the semiconductor emitter.

Under certain operating conditions, the permissible

Reduce operating current of laser diodes and light emitting diodes to prevent damage to the component. This applies, for example, at particularly high operating temperatures, such as at least 80 ° C, or at particularly low

Operating temperatures, for example, at -20 ° C and less. This is due in particular to the fact that the current-voltage characteristics of laser diodes and LEDs depend significantly on the temperature.

If no current control unit is used, so can be used to protect semiconductor emitters alternatively complex external Circuits are used which limit the current. In addition, if the current is to be controlled dynamically depending on external conditions, additional sensors such as monitor photodiodes or temperature sensors and moreover

corresponding control blocks required. Such separate

 Components are usually arranged spatially spaced from the semiconductor emitter and electrically

connected. This results in a comparatively large amount of space and an increased effort during assembly.

In the semiconductor module described here are the

Semiconductor emitter and the current control unit integrated in a single component, in particular monolithically integrated. Thus, in, beside, on or below the semiconductor emitter, the current control unit is placed for limiting and / or regulating an operating current. The current control unit may include an integrated circuit and / or may include various sensors such as for temperature or optical power, or may be connected to such sensors.

It is also possible that the flow control unit is dynamic or static programmable. Furthermore, the

Current control unit may be placed next to or below the semiconductor emitter, in particular be integrated in a heat sink or be monolithically designed as part of the semiconductor emitter, electrically parallel or serial to an emitter structure of the semiconductor emitter. Further, it is possible that the power control unit includes a data memory and / or interfaces for communication, such as an electric bus system or a system for optical

Transmission of light signals. By integrating the current control unit in the semiconductor module external components such as

Current control, power control, ESD protection diodes or other control electronics omitted. Thus, a compact design of the semiconductor module can be achieved. Furthermore, an extended range of functions of the semiconductor module is accessible, for example via a brightness control and an increased security.

According to at least one embodiment, the

 Semiconductor emitter and the current control unit monolithically integrated in a single semiconductor chip. This allows the semiconductor emitter and the current control unit on a

common substrate as a semiconductor substrate. For example, the semiconductor emitter and the

Power control unit generated on the common substrate, such as an epitaxial growth. Thus, it is possible that the semiconductor module is designed as a whole as a semiconductor chip and consists of the semiconductor chip with the semiconductor emitter and the current control unit.

According to at least one embodiment, the

Semiconductor emitter configured to be operated with a mean electrical power of at least 0.1 W or 0.4 W or 1 W or 5 W. If the semiconductor emitter has a plurality of emission regions or a plurality of regions provided for generating radiation, then the average electrical power consumption is preferably valid for each of these regions. By comparison, individual pixels or

Pixels in displays usually electrical

Power consumption in the range of less than mW. Of the

Semiconductor emitter can therefore be an electrical

Power consumption can be set at two, three or three four orders of magnitude above the typical electrical power consumption of pixels or pixels in displays. The semiconductor emitter and the semiconductor module are used, for example, for distance measurements via a

Running time determination, also known as Time of Flight or ToF for short. Likewise, the semiconductor module in headlights, for material processing or as a light source for a

Scanner or a projection beam can be used.

In accordance with at least one embodiment, the

Stromregeleinheit a growth substrate for the

Semiconductor emitter or vice versa. That is, the

Semiconductor emitter grown on the flow control unit, in particular epitaxially grown, or vice versa.

According to at least one embodiment, the

Stromregeleinheit a Zener diode or consists of such. Thus, the flow control unit is the

 Semiconductor emitter preferably electrically anti-parallel

connected. Alternatively, the flow control unit as

Thyristor be designed or include such. According to at least one embodiment is a

Breakdown voltage of the zener diode equal to one

intended operating voltage of the semiconductor emitter at a temperature of -20 ° C and / or +80 ° C. This is preferably true with a tolerance of at most 1 V or 0.5 V. Proper operating voltage means that at this operating voltage and / or the associated operating current of the semiconductor emitter can be operated without significant lifetime reduction. For example, the Semiconductor emitter at the intended operating voltage and / or the intended operating current for a

Lifetime of at least 1000 operating hours or 5000 operating hours. If the intended operating voltage and / or the intended operating current is exceeded or significantly exceeded, the lifetime of the semiconductor module decreases, for example, by at least a factor of 10 or 100 or 1000 or 10000.

According to at least one embodiment, the

Breakdown voltage of the current control unit by at most one of a band gap of an active region of the semiconductor emitter corresponding amount above the intended

Operating voltage. For example, is the bandgap

2.5 eV, then the breakdown voltage of the current control unit is then at most 2.5 V above the intended

Operating voltage. Preferably, this voltage difference between the breakdown voltage and the intended operating voltage is at most 50% or 25% of the voltage corresponding to the bandgap.

According to at least one embodiment, the

intended operating voltage at least equal to the band gap value or at least twice the band gap corresponding value. Alternatively or additionally, the operating voltage is at most the

Six times or four times that of the band gap

corresponding value. If, for example, the band gap is 2.5 eV, the intended operating voltage is accordingly between 2.5 V and 15 V or preferably between 5 V and 10 V. Accordingly, the breakdown voltage is

Flow control unit at a maximum of seven times or

at most five times the band gap Voltage value, in the above example so at most 12.5 V or 17.5 V.

The intended operating voltage is, relative to the band gap, dependent on the emission wavelength.

For example, near-infrared emitting

Semiconductor emitters is the intended

Operating voltage near the simple of the band gap corresponding voltage value, whereas approximately in green emitting semiconductor emitters the intended

 Operating voltage can be approximately four times the voltage corresponding to the band gap voltage value.

According to at least one embodiment, the

Current control unit only to a current limit by the

Semiconductor emitter set up. That is, via the flow control unit is no or no significant

Control of an intensity of the semiconductor emitter

emitted radiation in normal operation. In particular, the current control unit does not function as an intensity modulator approximately similar to a pulse width modulation, PWM for short. By the current control unit only too high currents are prevented by the semiconductor emitter, in particular in

Forward direction of the semiconductor emitter. That is, unlike an ESD protection diode, it is possible that the

 Current control unit mainly serves in the forward direction to a current limit through the semiconductor emitter therethrough. The flow control unit can be understood as a reversible protection against excessive currents.

According to at least one embodiment, the

Current control unit is a current control diode or consists of such. With a current control diode are too high currents through the semiconductor emitter preventable. The current control unit in turn serves for a current limitation and / or as a constant current source. In accordance with at least one embodiment, the semiconductor module is configured to be connected to external electrical terminals with a constant current source which is located outside the semiconductor module. That is, the current control unit is then not a power source for the semiconductor emitter.

According to at least one embodiment, the

Current control unit of the semiconductor emitter electrically connected in series. Alternatively, the current control unit and the semiconductor emitter may be electrically connected in parallel or in anti-parallel.

According to at least one embodiment, the

Power control unit a programmable integrated

Circuit or is through a programmable

integrated circuit formed. It is the

 Semiconductor emitter electrically connected to the integrated circuit. The programming can be permanently and firmly implemented in the circuit or be changeable during operation of the semiconductor module.

According to at least one embodiment, the

Power control unit on an external electrical connection. Such a connection is also called a bus. The electrical connection, which can have one or more parallel signal lines, the

Flow control unit be programmable. In accordance with at least one embodiment, the current control unit comprises a memory unit. In the

Memory unit operating data of the semiconductor emitter can be stored, such as an operating time and / or maximum voltages or currents and / or a

 Operating temperature and / or an optical power. Furthermore, it is possible for the memory unit to store necessary data for the operation of the semiconductor module, in particular to permanently store it, for example maximally permitted

Voltages at certain temperatures. Such tables are also referred to as look up tables.

According to at least one embodiment, this includes

Semiconductor module a heat sink. The heat sink may be an assembly platform for the flow control unit and the semiconductor emitter. This makes it possible for the heat sink to be the component mechanically supporting and stabilizing the semiconductor module. Without the heat sink, the semiconductor module would then not be manageable as a mechanically stable component.

In accordance with at least one embodiment, the heat sink has an average thermal conductivity of at least 120 W / (m-K) or 200 W / (m-K) or 250 W / (m-K). In particular, the heat sink is made of a metal or a metal alloy, such as a major constituent in the form of copper or aluminum or silver. Furthermore, the heat sink from a

thermally conductive ceramic or a crystalline or amorphous semiconductor material such as silicon carbide or

Be silicon nitride. Likewise, the heat sink may be made of a composite material such as copper-tungsten or Direct Bonded Copper, DBC for short. In addition, diamond or diamond-like

Carbon, short DLC, possible for the heat sink. In the event of a metallic, electrically conductive heat sink, an electrically insulating passivation layer may be present to prevent electrical short circuits. According to at least one embodiment, the

 Flow control unit partially or completely in the

Integrated heat sink. This means in particular that the flow control unit is partially or completely located in one or more recesses or openings of the heat sink. The current control unit is glued or soldered thermally conductive, for example, to the heat sink.

In accordance with at least one embodiment, an average thickness of the flow control unit is at most 20 ym or 15 ym or 10 ym or 6 ym. Due to the small thickness of

 Current control unit, this can be attached without significant additional thermal resistance between the semiconductor emitter and the heat sink. The current control unit is preferably based on a semiconductor material such as silicon.

According to at least one embodiment, the

Current control unit and the semiconductor emitter arranged partially or completely stacked. In this case, the semiconductor emitter may be located between the flow control unit and the heat sink or the flow control unit is mounted between the semiconductor emitter and the heat sink. Completely stacked means in particular that the current control unit and the semiconductor emitter

are arranged congruently or that the current control unit is smaller than the semiconductor emitter and completely

within the semiconductor emitter, in plan view

seen, or vice versa. According to at least one embodiment, the

 Current control unit and the semiconductor emitter electrically connected directly and / or surface. For example, the semiconductor emitter and the current control unit are electrically conductively glued together flat or flat

soldered together. This can main pages of

Current control unit and the semiconductor emitter, which face each other, be completely or predominantly covered with a solder or a thermally and electrically conductive adhesive.

According to at least one embodiment, this includes

Semiconductor module one or more sensors. The at least one sensor is for measuring temperature, brightness,

Humidity, air pressure, operating time and / or electrical power consumption such as current and / or voltage set up. Several sensors can be integrated in a single component, such as a semiconductor chip, or several separate sensors can be different than one another

Components be present.

In accordance with at least one embodiment, the at least one sensor is connected to the semiconductor emitter and / or to the semiconductor emitter

 Stromregeleinheit seen in plan view a distance of at most the average diagonal length of the

 Semiconductor emitter on. Alternatively or additionally, with regard to the distance between the sensor and the

Semiconductor emitter and / or the current control unit the same, as stated above to the distance between the semiconductor emitter and the current control unit. On the above

References to this are referred. In accordance with at least one embodiment, the semiconductor module comprises one or more monitor photodiodes. The at least one monitor photodiode is set up to determine a radiation power of the radiation emitted by the semiconductor emitter. The monitor photodiode may be located outside of a beam path for emission of the radiation. That is, it is possible that the monitor photodiode detects only stray radiation within the semiconductor module.

In accordance with at least one embodiment, the monitor photodiode and the current control unit are monolithically integrated in a single chip. Alternatively, the monitor photodiode and the current control unit are separate components. Further, it is possible that the monitor photodiode are integrated monolithically in the semiconductor emitter together with the current control unit, so that the

Semiconductor module can consist of a single semiconductor chip.

According to at least one embodiment, the

Current control unit and the semiconductor emitter on the same semiconductor material system. It can be within the

Semiconductor material systems different

Material compositions and / or dopants are present.

According to at least one embodiment, the

Semiconductor emitter a semiconductor layer sequence. The

Semiconductor layer sequence is preferably based on a III-V compound semiconductor material. In the semiconductor material is _In] __ _n _ _m N _m Ga or a for example, a nitride compound semiconductor material such as Al _n

Phosphide compound semiconductor material such as Al _n Iri _] __ _n _ _m Ga _m P or even an arsenide

Compound semiconductor material such as Al _n In _] __ _n _ _m Ga _m As or as

Al _n Ga _m In _] __ _n _ _m AskP _] __k, where each 0 ^ n 1, 0 ^ m 1 and n + m <1 and 0 ^ k <1. Preferably, at least one layer or all layers of the

 Semiconductor layer sequence 0 <n <0.8, 0.4 <m <1 and n + m <0.95 and 0 <k <0.5. It can the

 Semiconductor layer sequence dopants and additional

Have constituents. For the sake of simplicity, however, only the essential constituents of the crystal lattice of the semiconductor layer sequence, ie Al, As, Ga, In, N or P, are given, even if these can be partially replaced and / or supplemented by small amounts of further substances. In the case of green emitting semiconductor emitters, the current control unit and / or the semiconductor emitter is based

preferred on the AlInGaN material system.

According to at least one embodiment, the

Current control unit configured to limit an operating current through the semiconductor emitter only outside a certain parameter range. The parameter range is defined, for example, by a core operating temperature range or a specific operating time. Of the

Core operating temperature range is, for example, between -20 ° C and 80 ° C, for example, in automotive applications, this temperature range is under or exceeded test conditions. Especially for

Automotive applications is a functional capability of the

Demonstrate semiconductor module over a wider temperature range, for example over a temperature range of -40 ° C to 120 ° C away, based on the location of the semiconductor module. According to at least one embodiment, the

 Current control unit active outside a core parameter range and ineffective within the core parameter range.

Ineffective can mean that the current control unit activates only outside the core parameter range. Within the core parameter range, for example, flows through the

Current control unit, a current share of at most 10 ^~ or 10 ^~ 4 or lO - ^ based on the average current through the semiconductor emitter. That is, within the

Kernparameterbereichs the current control unit for the electrical function of the semiconductor module is preferred

negligible.

The semiconductor module is preferably operated such that the current control unit is usually inactive during operation.

 In particular, the current control unit is merely activated and / or actively regulates the current when the semiconductor module is operated under comparatively extreme conditions,

especially with regard to the ambient temperature. This means, for example, that an operating range of the semiconductor module is extended by the current control unit and the current control unit fulfills a function only in this extended range. Within the core parameter range, by contrast, the current control unit is virtually without effect when the semiconductor module is operated as intended.

In addition, an operating method is specified, with which the semiconductor module is operated. It is the

Current control unit a Zener diode or comprises a Zener diode. The zener diode is connected to the semiconductor emitter electrically in anti-parallel. A breakdown voltage of the Zener diode is at most equal to or equal to a bandgap of an active region of the semiconductor emitter highest 75% or 50% of this amount above one

Operating voltage of the semiconductor emitter. Of the

Semiconductor emitter is intended with the

Operating voltage operated. The preceding for the

Semiconductor module listed features apply equally to the operating method.

Hereinafter, an optoelectronic semiconductor module described herein will be explained in more detail with reference to the drawings with reference to embodiments. Same

 Reference numerals indicate the same elements in the individual figures. However, there are no scale relationships shown, but individual elements could be shown exaggerated for better understanding.

Show it:

Figures 1, 3 to 9 and 11 to 14 schematic

Sectional views of exemplary embodiments of optoelectronic semiconductor modules described here,

Figure 10 is a schematic perspective view of an embodiment of one described here

optoelectronic semiconductor module, and

Figure 2 is a schematic representation of electrical

Performance data of an embodiment of one here

described optoelectronic semiconductor module. In Figure 1 is an embodiment of a

Optoelectronic semiconductor module 1 shown. The

Semiconductor module 1 comprises a semiconductor emitter 2. The semiconductor emitter 2 is for example by a laser diode, about to produce green light, formed. Electrically anti-parallel to the semiconductor emitter 2 is a

Current control unit 3 connected. The current control unit 3 is a Zener diode. Furthermore, the

Semiconductor module 1, a heat sink 4.

The semiconductor emitter 2 and the current control unit 3 are mounted on a common substrate 22. In which

Substrate 22 is about an electrical

conductive substrate, for example of GaN, SiC, silicon, direct bonded copper or alternatively also an electrically insulating substrate such as diamond or a ceramic. In particular, the substrate 22 is a growth substrate for the semiconductor emitter 2, which in particular a

Semiconductor layer sequence based on the material system AlInGaN may include an active zone for generating radiation. Thus, the current control unit 3 and the semiconductor emitter 2 form a single semiconductor chip 23. The current control unit 3 is for example in one

 Recess of this semiconductor layer sequence mounted on the substrate 22. It is possible that the flow control unit 3 is based on the same material system as the semiconductor emitter. Alternatively, the flow control unit may be made of a different material system and via an electrical

Contact surface 44, as formed by a metallization or by a layer of a transparent conductive oxide such as ITO, be applied. An electrical contacting of the semiconductor emitter 2 and the current control unit via electrical contact surfaces 41, 42, 43, which are connected via bonding wires. About the bonding wires external electrical connections 31 are realized. As an alternative to contacting via bonding wires, the semiconductor module can be designed differently from the illustration in FIG. 1 as a surface-mountable module. In this case, in the electrically insulating heat sink 4,

For example, be formed from a nitride such as aluminum nitride or silicon nitride or a carbide such as silicon carbide, electrical feedthroughs, which are guided to a side facing away from the semiconductor chip 23 underside. All external electrical connections are then, deviating from the illustration in Figure 1, at the

 Semiconductor chip 23 facing away underside of the heat sink. 4

In FIG. 2A, for a first temperature T1 of 25 ° C. and a second temperature T2 of -40 ° C., a profile of an electrical current I relative to an electrical voltage U is shown, in FIG. 2B the course of the current I is compared with the electrical power P. shown. It can be seen that at the first temperature Tl the current-voltage curve and the current-power curve correspond to a conventional diode characteristic. That is, at a comparatively normal temperature of 25 ° C is the

Current control unit 3 virtually no effect. At a significantly lower temperature than the second temperature T2 is carried out by the current control unit 3 in the form of the Zener diode according to Figure 1, a significant reduction, recognizable in the kinks in the curves to the second temperature T2. As a result, overloading of the semiconductor emitter 2 by the current control unit 3 is prevented at low temperatures. Thus, in a compact and efficient manner, the large increase in operating voltage at low temperatures, which may be associated with failure of the module, can be avoided. According to FIG. 1, the flow control unit 3 serves as the flow control unit the Zener diode, similar to a diode for protection

electrostatic discharges. However, the

Breakdown voltage of this Zener diode designed so that this at low temperatures of the laser diode voltage

equivalent. Thus, the zener diode limits the current flow through the laser diode. The breakdown voltage of the zener diode constituting the current control unit 3 is significantly lower than that of a conventional electrostatic discharge protection diode. Unlike an ESD protection diode, the current control unit 3 thus acts primarily in the forward direction and not in the reverse direction. In addition, the current control unit 3 in the reverse direction can serve as an ESD protection diode.

At the breakdown voltage of the Zener diode, at low temperatures, part of the forward current flows through the Zener diode and not through the semiconductor emitter 2, in particular in the form of a laser diode. Thus, the semiconductor emitter 2 is energized less than would be the case without current control unit 3. This leaves the forward voltage of the

Semiconductor emitter 2 below a critical value and the semiconductor module 1 does not fail. The current limit is automatic insofar as this only from a

certain forward voltage, given by the breakdown voltage of the current control unit 3. A

further regulation is not mandatory.

In the embodiment of Figure 3 is the

Current control unit 3 mounted laterally next to the semiconductor emitter 2 on the heat sink 4. A distance D between the semiconductor emitter 2 and the current control unit 3 is located

for example, at about 20 ym. In particular, the

Distance D smaller than a smallest edge length E of Semiconductor emitter 2 and an edge length F of

Current control unit 3. The semiconductor emitter 2 is, for example, a laser diode chip or laser bar which has a greater extent in the direction perpendicular to the plane of the drawing than the smallest edge length E.

In the embodiment of Figure 4A, the current control unit 3 is formed by a current regulator, which is mounted together with the semiconductor emitter 2 on the heat sink 4. The current control unit 3 is electrically connected in series with the semiconductor emitter. A current regulator for the

Flow control unit 3 is for example by a

Resistor, a current control diode and / or an integrated circuit formed. In the case of a current control diode for the current control unit 3, the corresponding equivalent circuit diagram in Figure 4B is illustrated.

According to Figure 5, the flow control unit 3 by a

integrated circuit running, the optional one

Memory unit 32 may include. The electric

Interconnection is analogous to FIG. 4.

Optionally, at least one sensor 5a, 5b is also present. The at least one sensor 5a, 5b can be set up for temperature, optical power of the semiconductor emitter, air humidity or air pressure. In this case, the sensor 5 a can be integrated in the semiconductor chip 23 of the current control unit 3, or a separate sensor 5 b can be attached approximately to the heat sink 4.

Notwithstanding the representation in FIG. 5, the separate sensor 5b preferably has more than one electrical connection to the sensor 5a and to the current control unit 3, for example over not drawn additional bonding wires and / or

Tracks.

For example, a maximum current at a temperature of 25 ° C is 2 A, whereas at a temperature of -40 ° C, the maximum current allowed is only 1 A In the optionally existing memory unit 32, which may also be implemented as an external component outside the semiconductor chip 23 for the current control unit 3, is about a table deposited, the temperature-dependent

Contains maximum currents, so that for each temperature or for smaller temperature ranges, a maximum current through the

Semiconductor emitter 2 is precisely adjustable.

The integrated circuit, or IC for short, is in particular a user-specific integrated one

Circuit, short ASIC.

It is possible that a forward current completely from the

Current control unit 3 is specified. In this case, it is sufficient to apply only a power supply to the external terminals 31. An external power control is therefore unnecessary.

The integrated circuit and thus the current control unit 3 are preferably made in silicon technology. A

Control characteristic of the current control unit 3 may be burned into the integrated circuit. It can be anyone

Semiconductor emitter 2 may be provided with an individual flow control unit 3. Optionally, a control characteristic can be reprogrammed during operation of the semiconductor module. For this purpose, the current control unit 3 in particular comprises a bus connection to

Example an I ^ c bus. Programming is done

for example, by a digital signal at an anode and cathode, in particular via the electrical connections 31 or via an additional, not shown line, which is additionally led out of the semiconductor module 1. The memory unit 32 may have a data storage function which determines the operating conditions of the

 Semiconductor emitter 2 records, in particular the current, the voltage, the optical power and / or the

Ambient temperature. It is possible that these data can be read out if necessary.

About such a current control unit 3 with an integrated circuit, it is possible, any pulse sequences such as data transmission via light signals by means of

To produce a semiconductor module.

Furthermore, it is possible that in particular the

 Current control unit 3 comprises an additional emitter, preferably for non-visible radiation such as near-infrared radiation, or is connected to such an emitter. In addition, the current control unit 3, an additional photodiode

in particular for near-infrared radiation or be connected to such a photodiode. By means of such not specially drawn additional emitter and / or photodiode is an optical communication with others

 Components possible, for example for data exchange and / or

Control. The sensors 5 a, 5 b, in the flow control unit. 3

may include, for example, ambient light sensors or proximity sensors. For example, the current control unit 3 is similarly functionalized, such as the IC SFH 7770 E6 manufacturer OSRAM Opto Semiconductors GmbH.

Corresponding configurations of the flow control unit 3 and the at least one sensor 5a, 5b, as described above in FIG

Compound illustrated with Figure 5, can also be used in all other embodiments, as well as alternative, simpler concepts in which the

Current control unit 3 is designed as a Zener diode, thyristor or current control diode. In the embodiment of Figure 6 is the

 Semiconductor emitter 2 stacked above the flow control unit 3 disposed above the heat sink 4. It can the

Flow control unit 3 a greater lateral extent

have as the semiconductor emitter 2. Between the

Semiconductor emitter 2 and the current control unit 3, the electrical contact surface 41 may be located.

Notwithstanding the illustration in FIG. 6, a stacking can also take place in such a way that the semiconductor emitter 2 is located between the current control unit 3 and the heat sink 4.

In Figure 7 it is shown that the heat sink 4 has a recess in which the flow control unit 3 is completely located. The flow control unit 3 preferably ends flush with the heat sink 4. The current control unit 3, approximately in silicon technology

designed, is preferably made thin with a thickness of, for example, a maximum of 10 ym, to a low thermal resistance between the semiconductor emitter 2 and the

Heat sink 4 to ensure. This applies accordingly

preferably in all other embodiments.

As shown in Figure 7, it is possible that the

Semiconductor emitter 2 is only partially mounted on the flow control unit 3 and partially located directly on the heat sink 4. Alternatively, the semiconductor emitter 2 may be completely above the current control unit 3.

In the embodiment of Figure 8 is the

Flow control unit 3 at the same time as a heat sink for the

 Semiconductor emitter 2. A separate heat sink is not required in this case.

Notwithstanding the illustration in Figure 8, it is also

possible that the semiconductor module 1 is surface mountable and without electrical connections 31, realized by

Bond wires, is contactable. Furthermore, it is possible that an external electrical connection 31 at the optional

Contact surface 43 is attached to a side facing away from the semiconductor emitter 2 side. So can electrical

Through holes of the semiconductor emitter 2 through the current control unit 3 pass through or electrical lines are guided over side surfaces of the flow control unit 3. FIG. 9 illustrates that the flow control unit 3 is monolithically integrated in the heat sink 4. This makes it possible to realize a particularly compact design. The flow control unit 3 and the remaining parts of Heat sink 4 preferably have the same width. Notwithstanding the illustration in Figure 9, in the lateral direction, the heat sink 4 with the flow control unit 3 and the

Semiconductor emitter 2 flush with each other.

In the embodiment of Figure 10 is the

Current control unit 3 at the location of a monitor photodiode 6. That is, the current control unit 3 may be integrated in the monitor photodiode 6, which is preferably in the same housing as the semiconductor emitter 2. In other words, the current control unit 3 then contains a photodiode with which the optical power of the semiconductor emitter 2 can be monitored and preferably regulated. A distance of

Current control unit 3 to the semiconductor emitter 2 is far below a diagonal length G of the semiconductor emitter. 2

In this case, see Figure 11, the monitor photodiode 6 together with the current control unit 3 monolithic in the

Semiconductor chip 23 may be integrated for the semiconductor emitter 2, such as in a designated recess of the

 Semiconductor emitter 2. Alternatively, a large area

Connection between the semiconductor emitter 2 and the

Flow control unit 3 done, for example by means

Wafer bonding.

In the embodiment of Figure 12 are the

Current control unit 3 and the semiconductor emitter 2 monolithically integrated in the semiconductor chip 23. It can the

Semiconductor emitter 2 and the current control unit 3 may be generated approximately by selective epitaxy on the common substrate 22. Alternatively, a subsequent treatment of

Portions of the semiconductor emitter 2 about about

Ion implantation possible to locally turn a diode in reverse To obtain direction and so to produce the current control unit 3.

The current control unit 3 and the semiconductor emitter 2 may be based on the same material system, for example both on GaN. Alternatively, different

Material systems are used, for example, GaN on

Silicon or silicon on GaN. This is especially true for blue or green emitting LEDs or semiconductor lasers for the semiconductor emitter 2, which on a

 Silicon substrate can be made or on a

Silicon substrate are transposed.

FIG. 13 illustrates that the current control unit 3 forms a growth substrate for the semiconductor emitter 2.

 By way of example, an electrical contact surface 43 is on an exposed subarea of the current control diode 3

applied. In FIG. 14, it is illustrated that, unlike in FIG. 13, the semiconductor emitter 2 is used as a growth substrate for the

Flow control unit 3 is designed. In this case, as in Figure 13, not shown additional buffer layers may be present to the mutual growth of the semiconductor emitter 2 and the flow control unit 3 to

facilitate .

In particular, in the embodiment of Figure 14 and the semiconductor emitter 2 is designed thin, such as a substrateless diode whose semiconductor layer sequence of a

Growth substrate is removed. This can be an efficient thermal coupling to the heat sink 4 and / or to the optionally also designed as a heat sink flow control unit. 3 be achieved. The same is true in all others

Embodiments possible.

The components shown in the figures follow, unless otherwise indicated, preferably in the specified

Sequence directly on each other. Layers that are not touching in the figures are different from each other

spaced. As far as lines are drawn parallel to each other, the corresponding surfaces are also aligned parallel to each other. Also, unless otherwise indicated, the relative positions of the

drawn components to each other in the figures correctly reproduced. The invention described here is not by the

 Description limited to the embodiments.

Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

This patent application claims the priority of German Patent Application 10 2017 112 101.3, the disclosure of which is hereby incorporated by reference. Reference sign list

1 optoelectronic semiconductor module

 2 semiconductor emitters

 22 substrate

 23 semiconductor chip

 3 flow control unit

 31 external electrical connection

 32 storage unit

 4 heat sink

 41-44 electrical contact surface

 5 sensor

 6 monitor photodiode

 D Distance semiconductor emitter - current control unit

E smallest edge length of the semiconductor emitter

F edge length of the flow control unit

 G Diagonal length of the semiconductor emitter

 I electricity in A

 P electrical power in W

 Tl first temperature, 25 ° C

 T2 second temperature, -40 ° C

 U voltage in V

Claims

claims 1. Optoelectronic semiconductor module (1) with  - A semiconductor emitter (2) for generating radiation, and  a flow control unit (3), in which  - The semiconductor emitter (2) and the current control unit (3) mechanically fixed and contiguous in the semiconductor module (1) are integrated, and  the semiconductor emitter (2) and the current control unit (3), as seen in plan view, have a distance (D) from one another of at most one mean diagonal length (G) of the semiconductor emitter (2), - The current control unit (3) comprises or is a Zener diode, which is the semiconductor emitter (2) electrically connected in anti-parallel, and  - A breakdown voltage of the Zener diode by at most one of a band gap of an active region of the semiconductor emitter (2) corresponding amount above a normal operating voltage of the semiconductor emitter (2). 2. Optoelectronic semiconductor module (1) after the previous claim, in which the semiconductor emitter (2) and the current control unit (3) are monolithically integrated in a single semiconductor chip (23), wherein the semiconductor emitter (2) is a laser diode, and wherein the semiconductor emitter (2) is adapted to be operated with an average electric power of at least 0.1W. 3. Optoelectronic semiconductor module (1) according to one of the preceding claims, in which the current control unit (3) forms a growth substrate for the semiconductor emitter (2) or vice versa. 4. Optoelectronic semiconductor module (1) according to one of the preceding claims, in which the current control unit (3) is a Zener diode, which is connected in an anti-parallel manner to the semiconductor emitter (2), wherein a breakdown voltage of the Zener diode is equal to an operating voltage of the semiconductor emitter (2) in a Temperature of -20 ° C, with a tolerance of at most 1 V. 5. Optoelectronic semiconductor module (1) according to one of the preceding claims, in which the flow control unit (3) only to one Current limit through the semiconductor emitter (2) is arranged through. 6. Optoelectronic semiconductor module (1) according to one of the preceding claims, wherein the current control unit (3) comprises a current control diode which is electrically connected in series to the semiconductor emitter (2). 7. Optoelectronic semiconductor module (1) according to one of the preceding claims, wherein the current control unit (3) comprises a programmable integrated circuit, to which the Semiconductor emitter (2) is electrically connected. 8. Optoelectronic semiconductor module (1) after the previous claim, in which the current control unit (3) is programmable during operation of the semiconductor module (1) and comprises an external electrical connection (31) and a memory unit (32). 9. Optoelectronic semiconductor module (1) according to one of the preceding claims, further comprising a heat sink (4) having an average thermal conductivity of at least 120 W / (m-K) on which the Current control unit (3) and the semiconductor emitter (2) are mounted together, wherein the heat sink (4) the mechanically bearing and stabilizing component of the semiconductor module (1) forms. 10. Optoelectronic semiconductor module (1) after the previous claim, in which the flow control unit (3) is partially or completely integrated in the heat sink (4), wherein an average thickness of the flow control unit (3) is at most 15 ym. 11. Optoelectronic semiconductor module (1) according to one of the preceding claims, in which the current control unit (3) and the semiconductor emitter (2) arranged partially or completely stacked on top of each other and electrically directly flat with each other are connected. 12. Optoelectronic semiconductor module (1) according to one of the preceding claims, further comprising at least one sensor (5) for temperature, brightness, air humidity, air pressure, operating time and / or electrical power consumption, wherein the sensor (5) to the semiconductor emitter (2) and / or the current control unit (3) seen in plan view a distance of at most the average diagonal length of Semiconductor emitter (2). 13. Optoelectronic semiconductor module (1) according to one of the preceding claims, further comprising at least one monitor photodiode (6) for determining a radiation power of the Semiconductor emitter (2) emitted radiation, wherein the monitor photodiode (6) and the current control unit (3) are monolithically integrated in a single chip. 14. Optoelectronic semiconductor module (1) according to one of the preceding claims, in which the current control unit (3) and the semiconductor emitter (2) are based on the same semiconductor material system, especially on the semiconductor material system AlInGaN. 15. Optoelectronic semiconductor module (1) according to one of the preceding claims, in which the flow control unit (3) is set up to limit an operating current through the semiconductor emitter (2) only outside a core operating temperature range, so that the current control unit (3) within the Core operating temperature range is ineffective.