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WO2018209654A1 - Dispositif, système et procédé de reconnaissance de longueur d'onde de lumière monochromatique - Google Patents

Dispositif, système et procédé de reconnaissance de longueur d'onde de lumière monochromatique Download PDF

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Publication number
WO2018209654A1
WO2018209654A1 PCT/CN2017/084931 CN2017084931W WO2018209654A1 WO 2018209654 A1 WO2018209654 A1 WO 2018209654A1 CN 2017084931 W CN2017084931 W CN 2017084931W WO 2018209654 A1 WO2018209654 A1 WO 2018209654A1
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Prior art keywords
monochromatic light
monochromatic
light wavelength
wavelength
emission layer
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English (en)
Chinese (zh)
Inventor
于治国
赵丽霞
刘磊
王军喜
李晋闽
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors

Definitions

  • the present disclosure relates to the field of photodetection technology, and in particular, to a device, system and method for monochromatic optical wavelength identification.
  • Monochromatic light wavelength recognition is widely used in communications, imaging, image recognition, tunable lasers, missile tracking and other fields. Due to the limitation of the carrier relaxation mechanism, the conventional semiconductor photodetector itself does not have the wavelength recognition capability. In order to achieve wavelength recognition, conventional semiconductor photodetectors require auxiliary elements with wavelength selectivity, such as gratings (see Reference 1), single mode fibers (see Reference 2), Bragg mirrors (see Reference 3), or resonances. Cavity (see Reference 4) and so on. However, these wavelength recognition devices are complex, space-consuming, costly, and difficult to integrate with high density.
  • thermoelectric photodetector capable of performing monochromatic wavelength recognition without the aid of an auxiliary component has been reported (see Reference 5).
  • This thermal electron photodetector has a metal-insulator-metal (MIM) structure that uses the hot electrons generated by the metal to replace the electron-hole pairs generated by the semiconductor for wavelength recognition.
  • MIM metal-insulator-metal
  • the incident light wavelength has a one-to-one correspondence with the open circuit voltage value.
  • the open circuit voltage must be generated in a very thin thickness of the intermediate insulating layer, generally less than 10 nm, so as to ensure that the hot electrons can pass through the insulating layer without entering the underlying metal to form an open circuit voltage without applying an external voltage.
  • the thermal electrons undergo strong scattering as they pass through the insulating layer. The thermal electron energy is lost and cannot reach the underlying metal.
  • the open circuit voltage disappears and the wavelength identification also fails.
  • the average free path of hot electrons in the insulating layer is less than 10 nm.
  • the present disclosure provides a device, system and method for monochromatic optical wavelength identification.
  • a monochromatic light wavelength identifying device comprising: a conductive substrate; an insulating layer formed on the conductive substrate; and a thermal electron emission layer formed of a metallic material on the insulating layer Wherein the conduction band of the insulating layer is higher than the Fermi level of the metallic material of the thermal electron emission layer.
  • the thermal electron emission layer is a film having a thickness of between 1 nm and 50 nm formed of a metal thin film or a compound having a metallic property.
  • the metal is a composite material of one or more of the following materials: gold, silver, aluminum, copper, platinum, titanium, nickel; the metal compound is One of the following materials: ThO 2 , La 2 O 3 , CeO 2 , Y 2 O 3 , LaB 6 .
  • the insulating layer is an inorganic insulating film or an organic insulating film having a thickness of between 5 nm and 1000 nm.
  • the material forming the organic insulating film is PMMA; the material forming the inorganic insulating film is one or more of the following materials: Al 2 O 3 , SiN x , Ta 2 O 5, HfO 2, Ga 2 O 3.
  • the conductive substrate is a bulk substrate of a conductive material; or comprises: a substrate body and a thin film of conductive material formed on the substrate body.
  • the conductive material is: a metal whose work function is greater than or equal to a work function of the thermal electron emission layer; or a resistivity of ⁇ 10 ⁇ cm, and a work function greater than that of the thermal electron emission layer Doped semiconductor material of work function.
  • the conductive substrate is a p-type doped Si substrate; the insulating layer is a SiO 2 film formed on the p-type doped Si substrate; the thermionic emission layer is An aluminum layer formed on the SiO 2 film.
  • the method further includes: a first electrode electrically connected to the conductive substrate; and a second electrode electrically connected to the thermal electron emission layer.
  • the conductive substrate is a bulk substrate of a conductive material, the first electrode and the insulating layer are formed on the same surface or different surfaces of the conductive substrate; or the conductive substrate includes: a substrate body and formation A film of a conductive material on the substrate body, the first electrode and the insulating layer are both formed on the film of the conductive material.
  • a monochromatic optical wavelength identification system comprising: a measurement loop comprising: a monochromatic optical wavelength identification device connected in series and forming a loop, a bias supply device, and a photocurrent measurement device
  • the monochromatic light wavelength identifying device is a monochromatic light wavelength identifying device as described above.
  • the method further includes: a control processing module, configured to: control the bias supply device to provide a bias voltage to the monochromatic optical wavelength identification device and record the loop measured by the photocurrent measurement device Current; calculate the current ratio of the current values corresponding to the two different bias voltages, and compare the current ratio with the ratio of the different optical wavelengths in the same environment to obtain the wavelength of the monochromatic light to be calibrated.
  • a control processing module configured to: control the bias supply device to provide a bias voltage to the monochromatic optical wavelength identification device and record the loop measured by the photocurrent measurement device Current; calculate the current ratio of the current values corresponding to the two different bias voltages, and compare the current ratio with the ratio of the different optical wavelengths in the same environment to obtain the wavelength of the monochromatic light to be calibrated.
  • control processing module stores a relationship between a monochromatic light wavelength and a corresponding current ratio.
  • a method of identifying a monochromatic light wavelength is also provided.
  • the monochromatic light wavelength identification method is based on the monochromatic light wavelength identification system as described above, comprising: receiving a monochromatic light irradiation to be calibrated by a thermal electron emission layer of a monochromatic light wavelength identification device; and a thermal electron emission layer and a conductive substrate A negative voltage V a is applied therebetween to obtain a photocurrent value I a in the loop; a negative voltage V b is applied between the thermal electron emission layer and the conductive substrate to obtain a photocurrent value I b in the loop; and the photocurrent I a is calculated I b ratio of currents I a / I b; and the current ratio and the current ratio of different wavelengths of light under the same environment as the conventional control, to obtain the wavelength of monochromatic light to be calibrated.
  • the absolute values of the negative voltages V a and V b are between 1V and 100V, and the higher one is at least 1.5 times the other.
  • the device, system and method for monochromatic optical wavelength identification of the present disclosure have at least one of the following beneficial effects:
  • the device is a thermal electron emission layer-insulation layer-conducting substrate (EIC) structure, which breaks through the limitation of thermal electron scattering and is not affected by the scattering of hot electrons in the entire insulating layer, and is only determined by the thermal electron emission layer in the thermal electron emission layer. / The behavior at the interface of the insulating layer, therefore, the thickness of the insulating layer can be as high as several tens of nanometers, thereby avoiding leakage of the insulating layer and ensuring the reliability of the entire device.
  • EIC thermal electron emission layer-insulation layer-conducting substrate
  • FIG. 1 is a schematic cross-sectional view of a monochromatic light wavelength identification device in accordance with an embodiment of the present disclosure.
  • FIG. 2 is a flow chart of a method of monochromatic light wavelength identification in accordance with an embodiment of the present disclosure.
  • FIG. 3 is a flow chart of a method of monochromatic light wavelength identification in accordance with an embodiment of the present disclosure.
  • Fig. 4 is a view showing the operation of the monochromatic light wavelength identifying device shown in Fig. 1.
  • Figure 5 is a graph showing the relationship between the current ratio of the monochromatic light wavelength identifying device shown in Figure 1 and the wavelength of a monochromatic light.
  • Figure 6 is a graph showing the relationship between the current ratio of the monochromatic light wavelength identifying device shown in Figure 1 and the monochromatic optical power.
  • Figure 7 is a graph showing photocurrent and dark current for the embodiment of the monochromatic light wavelength identification device of Figure 1.
  • FIG. 8 is a schematic structural view of a monochromatic light wavelength identification device according to a second embodiment of the present disclosure.
  • FIG. 9 is a schematic structural view of a monochromatic light wavelength identification device according to a third embodiment of the present disclosure.
  • the present disclosure is based on a novel thermal electron energy distribution principle, and provides a monochromatic optical wavelength identification device having a thermal electron-emitting layer-insulation-electrical-conducting substrate (EIC) structure with an intermediate insulating layer thickness of several tens of nanometers, and provides A method of realizing monochromatic light wavelength recognition by reading a photocurrent ratio of a device.
  • EIC thermal electron-emitting layer-insulation-electrical-conducting substrate
  • a monochromatic light wavelength identification device is provided.
  • 1 is a schematic cross-sectional view of a monochromatic light wavelength identification device in accordance with an embodiment of the present disclosure. As shown in FIG. 1, the monochromatic optical wavelength identification device of this embodiment includes:
  • the insulating layer 20 is formed on the conductive substrate
  • thermal electron emission layer 30 formed of a metallic material on the insulating layer 20;
  • the first electrode 41 is formed on the conductive substrate 10 to form a good electrical connection therewith;
  • the conduction band of the insulating layer 20 has a higher Fermi level than the metallic material of the thermal electron emission layer, which corresponds to a barrier between the metallic material of the thermal electron emission layer and the conduction band of the insulating layer 20, through which The relationship between the barrier and the different thermal electron energy distributions excited by the monochromatic light in the thermal electron emission layer realizes the recognition of the wavelength of the monochromatic light.
  • the conductive substrate 10 is a p-type doped Si substrate.
  • the conductive substrate may be a bulk substrate of a conductive material or a thin film of a conductive material formed on the non-conductive material.
  • the conductive material may be a metal or a doped semiconductor material.
  • the work function of the metal is greater than or equal to the work function of the hot electron emission layer, which may be elemental metal, doped metal or alloy metal, such as gold (Au), silver (Ag), aluminum. (Al), copper (Cu), platinum (Pt), titanium (Ti), nickel (Ni), or the like.
  • the semiconductor material may be a simple semiconductor or a compound semiconductor.
  • the compound semiconductor may be a III-V compound semiconductor such as gallium arsenide or gallium nitride, or may be a novel semiconductor such as silicon carbide or titanium oxide.
  • doping it may be an n-type doping or a p-type doping.
  • the doping impurities may be phosphorus or other impurities.
  • the doping impurities may be boron or other impurities.
  • the insulating layer is a SiO 2 film formed by a thermal oxidation process on a p-type doped Si substrate, and has a thickness of 40 nm.
  • the insulating layer may also be an insulating film formed of other inorganic or organic materials having insulating properties, and has a thickness of between 5 nm and 1000 nm.
  • Inorganic material forming the insulating layer for example: Al 2 O 3, SiN x , Ta 2 O 5, HfO 2, Ga 2 O 3.
  • the organic substance forming the insulating layer is, for example, polymethyl methacrylate (PMMA).
  • the monochromatic optical wavelength identification device of the present embodiment is in the form of a thermal electron emission layer-insulation layer-conductive substrate (EIC), the thermal electron scattering limitation is exceeded, and the influence of the scattering of hot electrons in the entire insulating layer is determined only by heat.
  • the thermal electron emission layer is an aluminum layer having a thickness of 15 nm.
  • the thermionic emission layer may also be a thin film formed of a metal or a metal compound, and may have a thickness of between 1 nm and 50 nm.
  • the metal here is, for example, gold (Au), silver (Ag), aluminum (Al), copper (Cu), platinum (Pt), titanium (Ti), nickel (Ni) or the like.
  • the metallic compound herein is, for example, ThO 2 , La 2 O 3 , CeO 2 , Y 2 O 3 , or LaB 6 .
  • the insulating layer 20 and the thermionic emission layer 30 are formed in a partial region of the upper surface of the conductive substrate 10, and the insulating layer 20 and the thermionic emission layer 30 are not formed in the other portion.
  • it may be formed directly by occlusion or the like, or an insulating layer and a thermal electron emission layer may be formed on the entire upper surface of the conductive substrate, and then the insulating layer and the thermoelectron emission layer of the set region are micromachined. Remove formation.
  • the first electrode 41 is a positive electrode formed on a surface of the conductive substrate 10 where the insulating layer 20 and the thermionic emission layer 30 are not formed, and forms a good electrical contact with the conductive substrate 10, and the material is composed from bottom to top. Ti/Al/Ti/Au, the thickness is 20 nm / 30 nm / 20 nm / 300 nm, respectively.
  • the second electrode 42 is a negative electrode formed on the thermionic emission layer 30 to form good electrical contact with the thermionic emission layer 30.
  • the material is Ti/Al/Ti/Au from bottom to top and has a thickness of 20 nm. /30nm/20nm/300nm.
  • first electrode 41 and the second electrode 42 one of them is a positive electrode, and the other is a negative electrode.
  • the two are prepared by using a metal material such as Au or Pt or a non-metal material such as ITO, and may be a single layer electrode or a multilayer electrode as shown in this embodiment.
  • a monochromatic optical wavelength identification system is also provided.
  • 2 is a schematic structural view of a monochromatic light wavelength identification system according to a second embodiment of the present disclosure.
  • the monochromatic optical wavelength identification system of this embodiment includes: a measurement loop and a control processing module.
  • the measurement loop includes a monochromatic optical wavelength identification device, a bias supply device, and a photocurrent measurement device that are connected in series and form a loop.
  • the monochromatic light wavelength identifying device is the monochromatic light wavelength identifying device of the first embodiment.
  • control processing module for controlling the bias supply device to provide a bias voltage to the monochromatic optical wavelength identification device in the loop and recording the current in the loop, and for calculating the current values corresponding to the two different bias voltages (I a and I b
  • the ratio (I a /I b ) is compared with the current ratio of different light wavelengths in the same environment to obtain the wavelength of the monochromatic light to be calibrated.
  • control processing module can also be implemented by an operator. In this case, the control processing module can be omitted.
  • the present disclosure also provides a method of monochromatic light wavelength recognition based on the monochrome light wavelength recognition system of the second embodiment.
  • 3 is a flow chart of a method of monochromatic light wavelength identification in accordance with an embodiment of the present disclosure. As shown in FIG. 3, the method for identifying the wavelength of the monochromatic light includes:
  • Step A placing the monochromatic light wavelength identification device in a monochromatic light irradiation environment, and receiving the monochromatic light irradiation to be calibrated by the thermal electron emission layer (Al layer);
  • Step B applying a negative voltage V a between the thermal electron emission layer (Al layer) and the conductive substrate (p-doped Si) to obtain a photocurrent value I a in the loop; in the thermal electron emission layer (Al layer) Applying a negative voltage V b to the conductive substrate (p-doped Si) to obtain a photocurrent value I b in the loop;
  • V a and V b are 2V and 4V. It should be noted that V a and V b can also select other values, such as 1V and 4V, 3V and 5V, and the like. Taking into account the accuracy and safety of the device, the voltage ranges of V a and V b are both 1 V to 100 V, and the higher one of V a and V b is at least 1.5 times the other.
  • Step C calculated photocurrent I a ratio of currents I b and I a / I b;
  • Step D The current ratio is compared with the current ratio of different light wavelengths in the same environment to obtain the wavelength of the monochromatic light to be calibrated.
  • the current ratio I a /I b has a one-to-one correspondence with the wavelength of the monochromatic light.
  • the monochromatic light wavelength can be judged by measuring the current ratio I a /I b .
  • Fig. 4 is a view showing the operation of the monochromatic light wavelength identifying device shown in Fig. 1.
  • heat electrons are generated in the thermal electron emission layer.
  • Thermal electron energy distribution The range is in E f to Between, where E f and Represents the Fermi level and incident photon energy, respectively.
  • E f and Represents the Fermi level and incident photon energy respectively.
  • a negative bias is applied to the metal layer, hot electrons having an energy higher than the metal/insulator interface barrier ⁇ B (V) will be emitted to the conduction band of the insulating layer to form a photocurrent I a as shown in a of FIG.
  • the conduction band forms a larger photocurrent, I b .
  • the current ratio I a /I b is different for different incident light wavelengths, as in a, b, c in FIG.
  • the identification of the wavelength of the monochromatic light can be achieved by measuring the current ratio of the device.
  • Figure 5 is a graph showing the relationship between the current ratio of the monochromatic light wavelength identifying device shown in Figure 1 and the wavelength of a monochromatic light.
  • V a and V b are selected to be 2V and 4V, and I a and I b correspond to photocurrents at 2V and 4V, respectively. It can be seen that the current ratio has a one-to-one correspondence with the wavelength of the monochromatic light. As the wavelength of the monochromatic light changes from 260 nm to 360 nm, the current ratio decreases monotonically from 0.49 to 0.06.
  • Figure 6 is a graph showing the relationship between the current ratio of the monochromatic light wavelength identifying device shown in Figure 1 and the monochromatic optical power.
  • the monochromatic light wavelengths are 290 nm and 320 nm, respectively, and the optical power varies from 10 ⁇ W to 60 ⁇ W. It can be seen that when the optical power changes, the current ratio is maintained around a specific value corresponding to the wavelength. Therefore, the wavelength identification device of the present embodiment has power uncorrelated characteristics, and in practical applications, the wavelength of the monochromatic light can be resolved without considering the illumination light power value.
  • Fig. 7 is a graph showing photocurrent and dark current of the monochromatic light wavelength identifying device shown in Fig. 1.
  • the dark current of the photodetector device of the monochromatic light wavelength of the present embodiment is very low, less than 2 ⁇ 10 -13 A, and the photocurrent curve of the monochromatic light with a power of 100 uw and a wavelength of 290 nm is also shown in the figure.
  • the signal to noise ratio is as high as 1 ⁇ 10 4 .
  • the extremely low dark current and high signal-to-noise ratio of the device ensure the reliability and usability of the device in practical applications.
  • FIG. 8 is a schematic structural view of a monochromatic light wavelength identification device according to a second embodiment of the present disclosure.
  • the monochromatic optical wavelength identifying device of the present embodiment is different from the monochromatic optical wavelength identifying device of the first embodiment in that the conductive substrate 10 includes a substrate body 11 and a conductive thin film layer 12 formed on the substrate 11.
  • the substrate 11 may be a conductive substrate, an insulating substrate or a semiconductor substrate.
  • the material of the conductive thin film layer 12 can be selected from any one of the conductive substrates in the first embodiment.
  • the monochromatic optical wavelength identification device of this embodiment is other than the conductive substrate and based on The method for identifying the monochromatic light wavelength is similar to that of the first embodiment and will not be described in detail herein.
  • FIG. 9 is a schematic structural view of a monochromatic light wavelength identification device according to a third embodiment of the present disclosure.
  • the monochromatic optical wavelength identifying device of the present embodiment is different from the monochromatic optical wavelength identifying device of the first embodiment in that the first electrode 41 is formed on the back surface of the conductive substrate 10.
  • the first electrode 41 is formed on the back surface of the conductive substrate and can have the same effect as good electrical contact therewith. Also, the first electrode 41 is formed on the back surface of the conductive substrate, and the area of the thermionic emission layer can also be increased.
  • the monochromatic optical wavelength identification device of the present embodiment is similar to the first embodiment except for the conductive substrate and the monochrome light wavelength recognition method based thereon, and will not be described in detail herein.
  • the present disclosure provides a monochromatic optical wavelength identification of a thermal electron-emitting layer-insulation-electrical-conducting (EIC) structure having an intermediate insulating layer thickness of up to several tens of nanometers based on a novel thermal electron energy distribution principle.
  • EIC thermal electron-emitting layer-insulation-electrical-conducting
  • ordinal numbers such as “first,” “second,” “third,” and the like, as used in the ⁇ Desc/Clms Page number>> It does not represent the order of one element and another element, or the order of the method of manufacture. The use of these ordinal numbers is only used to enable a component having a certain name to be clearly distinguished from another element having the same name.

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Abstract

L'invention concerne un dispositif, un système et un procédé de reconnaissance de longueur d'onde de lumière monochromatique. Ce dispositif de reconnaissance de longueur d'onde de lumière monochromatique comprend : un substrat électriquement conducteur (10); une couche d'isolation (20) formée sur le substrat électriquement conducteur (10); et une couche d'émission thermoélectronique (30), constituée d'un matériau métallique et formée sur la couche d'isolation (20); le niveau de Fermi de la bande de conductivité de la couche d'isolation (20) est supérieur à celui du matériau métallique de la couche d'émission thermoélectronique (30). La présente invention fournit, sur la base de nouveaux principes de distribution d'énergie thermoélectronique, une structure de dispositif de reconnaissance de longueur d'onde de lumière monochromatique qui est sans précédent; cette structure de dispositif consiste en une structure constituée - d'une couche d'émission thermoélectrique (30) - d'une couche d'isolation (20) - d'un substrat électriquement conducteur (10) (IEC), qui surmonte l'obstacle de limitation de la diffusion de thermoélectrons, n'est pas affectée par la diffusion des thermoélectrons dans la totalité de la couche d'isolation (20), et dépend uniquement du comportement des thermoélectrons au niveau de l'interface entre la couche d'émission thermoélectronique (30) et la couche d'isolation (20). Par conséquent, l'épaisseur de la couche d'isolation (20) peut atteindre des dizaines de nanomètres, ce qui permet d'éviter la fuite électrique de la couche d'isolation (20) et de garantir la fiabilité de l'ensemble du dispositif.
PCT/CN2017/084931 2017-05-18 2017-05-18 Dispositif, système et procédé de reconnaissance de longueur d'onde de lumière monochromatique Ceased WO2018209654A1 (fr)

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CN102564601A (zh) * 2010-12-22 2012-07-11 精工爱普生株式会社 热式光检测装置、电子设备、热式光检测器及其制造方法
US20140060643A1 (en) * 2012-09-05 2014-03-06 Lane W. Martin Light Absorbing Oxide Materials for Photovoltaic and Photocatalytic Applications and Devices
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