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WO2018129765A1 - 像素结构及液晶显示器 - Google Patents

像素结构及液晶显示器 Download PDF

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Publication number
WO2018129765A1
WO2018129765A1 PCT/CN2017/071740 CN2017071740W WO2018129765A1 WO 2018129765 A1 WO2018129765 A1 WO 2018129765A1 CN 2017071740 W CN2017071740 W CN 2017071740W WO 2018129765 A1 WO2018129765 A1 WO 2018129765A1
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Prior art keywords
thin film
film transistor
pixel
line
region
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English (en)
French (fr)
Inventor
郭晋波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/500,183 priority Critical patent/US20180217463A1/en
Publication of WO2018129765A1 publication Critical patent/WO2018129765A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a pixel structure and a liquid crystal display.
  • V film field effect transistor liquid crystal display TFT-LCD
  • TFT-LCD Vertical Alignment film field effect transistor liquid crystal display
  • reference numeral 1 is a scan line
  • 2 is a data line
  • 3 is a common line.
  • the low color shift pixel design generally uses the first metal layer as the common line 3, so three via holes (a, b, and c) are required in the structure.
  • the through hole a communicates with the pixel electrode of the thin film transistor T13 and the main region e
  • the through hole b communicates with the pixel electrode of the thin film transistor T12 and the sub-region d
  • the through hole c communicates with the thin film transistor T11 and the common line 3.
  • the three through holes occupy a large space, especially in a high-resolution panel design, the size of a single pixel is small, and the design of the three through holes has a large influence on the aperture ratio, which is disadvantageous for a high aperture ratio and high wear. Pixel design for penetration.
  • the present invention provides a pixel structure and a liquid crystal display to solve the technical problem that the through hole has a large occupied space and affects the aperture ratio in the prior art.
  • An aspect of the present invention provides a pixel structure including a scan line, a data line, a common line, and a pixel area, wherein the scan line is perpendicular to the data line, the data line is disposed in the same layer as the common line, and is parallel to each other, and the pixel area is located on the scan line.
  • the pixel region includes a sub-region including a first thin film transistor, a gate of the first thin film transistor is connected to the scan line, and a source of the first thin film transistor is connected to the common line.
  • the sub-region further includes a second thin film transistor and a sub-region pixel electrode, the gate of the second thin film transistor is connected to the scan line, the source of the second thin film transistor is connected to the data line, and the drain of the second thin film transistor is first Thin film transistor The drains are all connected to the sub-region pixel electrodes.
  • the pixel structure further includes a first via hole, and a drain of the second thin film transistor is connected to the sub-region pixel electrode through the first via hole.
  • the pixel region further includes a main region including a third thin film transistor and a main region pixel electrode.
  • the gate of the third thin film transistor is connected to the scan line, the source of the third thin film transistor is connected to the data line, and the drain of the third thin film transistor is connected to the pixel electrode of the main region.
  • the pixel structure further includes a second via hole, and a drain of the third thin film transistor is connected to the main region pixel electrode through the second via hole.
  • the common line is located between the data line and the pixel area.
  • the common line partially overlaps the pixel area.
  • a liquid crystal display including a scan driving circuit, a data driving circuit, and the above pixel structure, wherein the scan line is connected to the scan driving circuit and used to transmit a scan signal generated by the scan driving circuit, the data line and the data driving The circuit is connected and used to transmit data signals generated by the data driving circuit.
  • the pixel structure and the liquid crystal display provided by the present invention, since the data lines are disposed in the same layer as the common lines, the source of the first thin film transistor is no longer required to be connected through the via hole when connected to the common line, thereby eliminating one via hole.
  • the design thus increases the aperture ratio of the pixel. For high-resolution panels with small pixel sizes, the effect of increasing the aperture ratio in this way is more obvious, which further improves the transmittance.
  • FIG. 1 is a schematic diagram of a prior art pixel structure
  • FIG. 2 is a schematic structural diagram of a pixel according to an embodiment of the present invention.
  • FIG. 3 is a schematic circuit diagram of a pixel structure according to an embodiment of the invention.
  • an embodiment of the present invention provides a pixel structure, including a scan line 1, a data line 2, and a public Collinear 3 and pixel area.
  • the scan line 1 is disposed perpendicular to the data line 2
  • the data line 2 is disposed in the same layer as the common line 3 and is parallel to each other.
  • the pixel area is located in a region surrounded by the scan line 1 and the data line 2, the pixel area includes a sub-area 41, and the sub-area 41 includes a first thin film transistor T1, and the gate of the first thin film transistor T1 is connected to the scan line 1, first The source of the thin film transistor T1 is connected to the common line 3.
  • the source of the first thin film transistor T1 is no longer required to be connected through the via hole when connected to the common line 3, thereby eliminating the design of a through hole, thereby improving the pixel.
  • the aperture ratio For high-resolution panels with small pixel sizes, the effect of increasing the aperture ratio is more pronounced in this way, thereby further increasing the transmittance.
  • the sub-region 41 further includes a second thin film transistor T2 and a sub-region pixel electrode, the gate of the second thin film transistor T2 is connected to the scan line 1, and the source of the second thin film transistor T2 and the data line 2 Connected, the drain of the second thin film transistor T2 and the drain of the first thin film transistor T1 are both connected to the sub-region pixel electrode.
  • the pixel structure further includes a first via hole 5, and a drain of the second thin film transistor T2 is connected to the sub-region pixel electrode through the first via hole 5.
  • the pixel region further includes a main region 42 including a third thin film transistor T3 and a main region pixel electrode.
  • the gate of the third thin film transistor T3 is connected to the scan line 1
  • the source of the third thin film transistor T3 is connected to the data line 2
  • the drain of the third thin film transistor T3 is connected to the pixel electrode of the main area.
  • the scanning line 1 simultaneously turns on the first thin film transistor T1, the second thin film transistor T2, and the third thin film transistor T3, and the main region 42 and the sub-region 41 start charging.
  • the first thin film transistor T1 turns on the sub-region 41 and the common line 3, and the partial charge of the sub-region 41 is leaked onto the common line 3, so that the voltage of the sub-region 41 is pulled down, resulting in the voltage of the main region 42 and the sub-region 41. difference.
  • the different potentials cause the liquid crystal molecules of the main region 42 and the sub-region 41 to be differently distributed, thereby improving the bias of the large-view character.
  • the size of the first thin film transistor T1 determines the final potential of the sub-region 41 and the display brightness, which directly affects the low color shift effect.
  • the size of the first thin film transistor T1 can be selected according to actual conditions, which is not limited herein.
  • the pixel structure further includes a second through hole 6.
  • the drain of the third thin film transistor T3 is connected to the main area pixel electrode through the second via hole 6.
  • the common line 3 is located between the data line 2 and the pixel area. Since the data line 2 has a plurality of potential fluctuations, parasitic capacitance is easily generated. Therefore, the data line 2 and the pixel electrode (the main area pixel electrode or the sub-area pixel electrode) are too close to each other to easily cause a vertical crosstalk problem. In order to solve this problem, a certain distance is usually left between the data line 2 and the pixel electrode to avoid vertical crosstalk.
  • the common line 3 is located between the data line 2 and the pixel area. Since the common line 3 has only one potential, the problem of vertical crosstalk is not caused by being too close to the pixel electrode, and is common. There is also no need to set a spacing between the line 3 and the data line 2.
  • the common line 3 is disposed between the data line 2 and the pixel electrode. At some intervals, the size of the pixel structure is not increased.
  • the common line partially overlaps the pixel area.
  • the common line and the pixel area are not on the same layer, so the common line and the pixel area can be partially overlapped, and the partially overlapped structure can save space, and can further increase the aperture ratio of the pixel and reduce the panel cost.
  • the embodiment of the invention further provides a liquid crystal display comprising a scan driving circuit, a data driving circuit and a pixel structure in the above embodiment, wherein the scan line is connected to the scan driving circuit and used to transmit the scan signal generated by the scan driving circuit, the data line Connected to the data driving circuit and used to transmit data signals generated by the data driving circuit.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

一种像素结构及液晶显示器，数据线（2）与公共线（3）同层设置且相互平行，像素区位于扫描线（1）与数据线（2）所围成的区域内，像素区包括子区，子区包括第一薄膜晶体管。由于数据线（2）与公共线（3）同层设置，因此第一薄膜晶体管的源极与公共线（3）连接时不再需要经过通孔进行连接，以省去一个通孔的设计，从而提高像素的开口率。

Description

像素结构及液晶显示器
本申请要求享有2017年1月11日提交的名称为“像素结构及液晶显示器”的中国专利申请201710017468.5的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，尤其涉及一种像素结构及液晶显示器。
背景技术
垂直取向(Vertical Alignmengt，简称VA)薄膜场效应晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，简称TFT-LCD)在大视角观察时色偏现象比较严重，在大尺寸面板上更为明显。为了解决大视角的色偏问题，大尺寸面板像素设计普遍采用低色偏(Low color shift)的像素设计。
请参考图1，图中标号1为扫描线，2为数据线，3为公共线。低色偏像素设计一般采用第一金属层做公共线3，因此在结构上需要三个通孔(a、b和c)。其中通孔a连通薄膜晶体管T13与主区e的像素电极，通孔b连通薄膜晶体管T12与子区d的像素电极，通孔c连通薄膜晶体管T11与公共线3。由于三个通孔占据较大的空间，特别是在高解析度的面板设计中，单个像素尺寸较小，三个通孔的设计对开口率的影响较大，不利于高开口率，高穿透率的像素设计。
发明内容
本发明提供一种像素结构及液晶显示器，用以解决现有技术中通孔过多占据空间较大，影响开口率的技术问题。
本发明一方面提供一种像素结构，包括扫描线、数据线、公共线和像素区，其中，扫描线与数据线垂直设置，数据线与公共线同层设置且相互平行，像素区位于扫描线与数据线所围成的区域内。像素区包括子区，子区包括第一薄膜晶体管，第一薄膜晶体管的栅极与扫描线连接，第一薄膜晶体管的源极与公共线连接。
优选的，子区还包括第二薄膜晶体管和子区像素电极，第二薄膜晶体管的栅极与扫描线连接，第二薄膜晶体管的源极与数据线连接，第二薄膜晶体管的漏极和第一薄膜晶体管 的漏极均与子区像素电极连接。
优选的，像素结构还包括第一通孔，第二薄膜晶体管的漏极通过第一通孔与子区像素电极连接。
优选的，像素区还包括主区，主区包括第三薄膜晶体管和主区像素电极。其中，第三薄膜晶体管的栅极与扫描线连接，第三薄膜晶体管的源极与数据线连接，第三薄膜晶体管的漏极与主区像素电极连接。
优选的，像素结构还包括第二通孔，第三薄膜晶体管的漏极通过第二通孔与主区像素电极连接。
优选的，公共线位于数据线与像素区之间。
优选的，公共线与像素区部分重叠。
本发明另一方面提供一种液晶显示器，包括扫描驱动电路、数据驱动电路和上述的像素结构，其中，扫描线与扫描驱动电路连接并用于传送扫描驱动电路产生的扫描信号，数据线与数据驱动电路连接并用于传送数据驱动电路产生的数据信号。
本发明提供的像素结构及液晶显示器，由于数据线与公共线同层设置，因此第一薄膜晶体管的源极与公共线连接时不再需要经过通孔进行连接，由此可以省去一个通孔的设计，从而提高像素的开口率。对于像素尺寸较小的高解析度面板，通过这种方式提升开口率的效果更加明显，可进一步提升穿透率。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1为现有技术像素结构示意图；
图2为本发明一实施例提供的像素结构示意图；
图3为本发明一实施例提供的像素结构的电路示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
请参考图2和图3，本发明实施例提供一种像素结构，包括扫描线1、数据线2、公 共线3和像素区。其中，扫描线1与数据线2垂直设置，数据线2与公共线3同层设置且相互平行。像素区位于扫描线1与数据线2所围成的区域内，像素区包括子区41，子区41包括第一薄膜晶体管T1，第一薄膜晶体管T1的栅极与扫描线1连接，第一薄膜晶体管T1的源极与公共线3连接。
由于数据线2与公共线3同层设置，因此第一薄膜晶体管T1的源极与公共线3连接时不再需要经过通孔进行连接，由此可以省去一个通孔的设计，从而提高像素的开口率。对于像素尺寸较小的高解析度面板，通过这种方式提升开口率的效果更加明显，从而进一步提升穿透率。
在本发明一个具体实施例中，子区41还包括第二薄膜晶体管T2和子区像素电极，第二薄膜晶体管T2的栅极与扫描线1连接，第二薄膜晶体管T2的源极与数据线2连接，第二薄膜晶体管T2的漏极和第一薄膜晶体管T1的漏极均与子区像素电极连接。
进一步的，像素结构还包括第一通孔5，第二薄膜晶体管T2的漏极通过第一通孔5与子区像素电极连接。
在本发明一个具体实施例中，像素区还包括主区42，主区42包括第三薄膜晶体管T3和主区像素电极。其中，第三薄膜晶体管T3的栅极与扫描线1连接，第三薄膜晶体管T3的源极与数据线2连接，第三薄膜晶体管T3的漏极与主区像素电极连接。
充电时，扫描线1将第一薄膜晶体管T1、第二薄膜晶体管T2和第三薄膜晶体管T3同时打开，主区42和子区41开始充电。同时第一薄膜晶体管T1导通子区41和公共线3，将子区41的部分电荷漏到公共线3上，使子区41电压被拉低，导致主区42与子区41的电压有差异。不同的电位使得主区42和子区41的液晶分子转向分布不同，从而改善大视角色偏。其中第一薄膜晶体管T1的大小决定了子区41的最终电位及显示亮度，直接影响低色偏效果，第一薄膜晶体管T1的大小可根据实际情况进行选取，在此不做限定。
进一步的，像素结构还包括第二通孔6。第三薄膜晶体管T3的漏极通过第二通孔6与主区像素电极连接。
进一步的，公共线3位于数据线2与像素区之间。由于数据线2有多个电位波动，容易产生寄生电容，因此，数据线2与像素电极(主区像素电极或子区像素电极)靠得过近容易产生垂直串扰问题。为了解决这一问题，通常在数据线2与像素电极之间会留出一定的间距，以避免垂直串扰。
本发明实施例提供的像素结构，公共线3位于数据线2与像素区之间，由于公共线3只有一个电位，因此不会因为与像素电极靠得过近而产生垂直串扰的问题，并且公共线3与数据线2之间也无需设置间距，优选的，将公共线3设置在数据线2与像素电极之间原 有的间隔处，不会因此增加像素结构的尺寸。进一步的，公共线与像素区部分重叠。公共线与像素区不在同一层上，因此可将公共线与像素区设置为部分重叠，这种部分重叠的结构可以节省空间，并且可进一步增加像素的开口率，降低面板成本。
本发明实施例还提供一种液晶显示器，包括扫描驱动电路、数据驱动电路和上述实施例中的像素结构，其中，扫描线与扫描驱动电路连接并用于传送扫描驱动电路产生的扫描信号，数据线与数据驱动电路连接并用于传送数据驱动电路产生的数据信号。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (20)

  1. 一种像素结构，包括：扫描线、数据线、公共线和像素区，其中，所述扫描线与所述数据线垂直设置，所述数据线与所述公共线同层设置且相互平行，所述像素区位于所述扫描线与所述数据线所围成的区域内，所述像素区包括子区，所述子区包括第一薄膜晶体管，所述第一薄膜晶体管的栅极与所述扫描线连接，所述第一薄膜晶体管的源极与所述公共线连接。
  2. 根据权利要求1所述的像素结构，其中，所述子区还包括第二薄膜晶体管和子区像素电极，所述第二薄膜晶体管的栅极与所述扫描线连接，所述第二薄膜晶体管的源极与所述数据线连接，所述第二薄膜晶体管的漏极和所述第一薄膜晶体管的漏极均与所述子区像素电极连接。
  3. 根据权利要求2所述的像素结构，其中，所述像素结构还包括第一通孔，所述第二薄膜晶体管的漏极通过所述第一通孔与所述子区像素电极连接。
  4. 根据权利要求1所述的像素结构，其中，所述像素区还包括主区，所述主区包括第三薄膜晶体管和主区像素电极，所述第三薄膜晶体管的栅极与所述扫描线连接，所述第三薄膜晶体管的源极与所述数据线连接，所述第三薄膜晶体管的漏极与所述主区像素电极连接。
  5. 根据权利要求4所述的像素结构，其中，所述像素结构还包括第二通孔，所述第三薄膜晶体管的漏极通过所述第二通孔与所述主区像素电极连接。
  6. 根据权利要求1所述的像素结构，其中，所述公共线与所述像素区部分重叠。
  7. 根据权利要求2所述的像素结构，其中，所述公共线与所述像素区部分重叠。
  8. 根据权利要求4所述的像素结构，其中，所述公共线与所述像素区部分重叠。
  9. 根据权利要求5所述的像素结构，其中，所述公共线与所述像素区部分重叠。
  10. 根据权利要求1所述的像素结构，其中，所述公共线位于所述数据线与所述像素区之间。
  11. 根据权利要求2所述的像素结构，其中，所述公共线位于所述数据线与所述像素区之间。
  12. 根据权利要求4所述的像素结构，其中，所述公共线位于所述数据线与所述像素区之间。
  13. 根据权利要求5所述的像素结构，其中，所述公共线位于所述数据线与所述像素区之间。
  14. 一种液晶显示器，包括：扫描驱动电路、数据驱动电路和像素结构，其中，扫描 线与所述扫描驱动电路连接并用于传送所述扫描驱动电路产生的扫描信号，数据线与所述数据驱动电路连接并用于传送所述数据驱动电路产生的数据信号；
    所述像素结构包括：扫描线、数据线、公共线和像素区，其中，所述扫描线与所述数据线垂直设置，所述数据线与所述公共线同层设置且相互平行，所述像素区位于所述扫描线与所述数据线所围成的区域内，所述像素区包括子区，所述子区包括第一薄膜晶体管，所述第一薄膜晶体管的栅极与所述扫描线连接，所述第一薄膜晶体管的源极与所述公共线连接。
  15. 根据权利要求14所述的液晶显示器，其中，所述子区还包括第二薄膜晶体管和子区像素电极，所述第二薄膜晶体管的栅极与所述扫描线连接，所述第二薄膜晶体管的源极与所述数据线连接，所述第二薄膜晶体管的漏极和所述第一薄膜晶体管的漏极均与所述子区像素电极连接。
  16. 根据权利要求15所述的液晶显示器，其中，所述像素结构还包括第一通孔，所述第二薄膜晶体管的漏极通过所述第一通孔与所述子区像素电极连接。
  17. 根据权利要求14所述的液晶显示器，其中，所述像素区还包括主区，所述主区包括第三薄膜晶体管和主区像素电极，所述第三薄膜晶体管的栅极与所述扫描线连接，所述第三薄膜晶体管的源极与所述数据线连接，所述第三薄膜晶体管的漏极与所述主区像素电极连接。
  18. 根据权利要求17所述的液晶显示器，其中，所述像素结构还包括第二通孔，所述第三薄膜晶体管的漏极通过所述第二通孔与所述主区像素电极连接。
  19. 根据权利要求14所述的液晶显示器，其中，所述公共线与所述像素区部分重叠。
  20. 根据权利要求14所述的液晶显示器，其中，所述公共线位于所述数据线与所述像素区之间。
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