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WO2018124392A1 - Appareil de séchage à pression réduite et procédé de séchage à pression réduite - Google Patents

Appareil de séchage à pression réduite et procédé de séchage à pression réduite Download PDF

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Publication number
WO2018124392A1
WO2018124392A1 PCT/KR2017/002559 KR2017002559W WO2018124392A1 WO 2018124392 A1 WO2018124392 A1 WO 2018124392A1 KR 2017002559 W KR2017002559 W KR 2017002559W WO 2018124392 A1 WO2018124392 A1 WO 2018124392A1
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WO
WIPO (PCT)
Prior art keywords
drying chamber
pressure
drying
gas
dry gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/002559
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English (en)
Korean (ko)
Inventor
윤창로
최봉진
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deviceeng Co Ltd
Original Assignee
Deviceeng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deviceeng Co Ltd filed Critical Deviceeng Co Ltd
Publication of WO2018124392A1 publication Critical patent/WO2018124392A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
    • F26B5/042—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum for drying articles or discrete batches of material in a continuous or semi-continuous operation, e.g. with locks or other air tight arrangements for charging/discharging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/001—Drying-air generating units, e.g. movable, independent of drying enclosure
    • H10P70/15—
    • H10P72/0411—
    • H10P72/0431—
    • H10P72/33—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present invention relates to a reduced pressure drying apparatus and a reduced pressure drying method, and more particularly, to a reduced pressure drying apparatus and a reduced pressure drying method for cleaning and drying a target object such as a mask included in a display or a semiconductor manufacturing process.
  • OLED Organic Light Emitting Diodes
  • OLED has made a number of technical advances to date, starting in 1987 with Eastman Kodak's Tang's success in shining high-brightness in stacked organic materials.
  • OLEDs have been regarded as so-called 'dream displays' with the advantages of excellent image quality and simple manufacturing process in terms of brightness, contrast ratio, response speed, color reproducibility, and visibility.
  • OLED recombines holes and electrons injected through an anode and a cathode in an organic thin film to form excitons, and the energy emitted as the excitons return to a stable state changes into light and emits light itself. It is a light emitting display device.
  • OLED The simplest structure of OLED consists of a cathode for injecting electrons, an anode for injecting holes, and an organic thin film that emits light.
  • a functional layer helps to inject and transfer electrons or holes for recombination of carriers and improvement of emission characteristics. Include.
  • Organic thin film formation techniques include a deposition technique using a mask such as a fine metal mask (FMM), a patterning technique using a laser, and a printing technique using a liquid-based noming material.
  • a mask such as a fine metal mask (FMM)
  • FMM fine metal mask
  • a patterning technique using a laser and a printing technique using a liquid-based noming material.
  • DIW Ultra Pure Distilled Water, De-Ionized Water
  • the liquid to be treated is immersed in a treatment tank containing liquid IPA (IsoPropyl Alcohol) and the like, and after replacing the cleaning liquid such as DIW remaining on the surface with a solvent, the solvent to be removed from the treatment tank and remaining on the surface Was evaporated in the air using an air knife or the like, or by condensing the vapor of IPA on the surface of the workpiece, replacing the cleaning liquid with a solvent, and then evaporating the remaining solvent to dry.
  • IPA IsoPropyl Alcohol
  • IPA boiling point at atmospheric pressure is 82.5 ° C.
  • the IPA vapor is condensed on the surface of the workpiece due to the temperature difference to form the IPA oil film.
  • the temperature of the object is increased to the boiling point of the drying solution (IPA).
  • HFE hydrofluoroether
  • IPA alcoholic substances
  • HFE is a cleaning solution because it does not mix with water. Applicable to processes and equipment using (hydrocarbon), but not suitable for drying after a cleaning process using an aqueous cleaning solution.
  • the present invention has been made to solve the above-mentioned problems of the prior art, the object of the invention is that the drying is carried out under reduced pressure, there is no risk of leakage of dry gas or fire, and there is no fear of thermal deformation of the workpiece And it provides a vacuum drying method.
  • Substituting a cleaning liquid by supplying a drying gas to the drying chamber in a state in which the inside of the drying chamber is depressurized and exhausted to a pressure lower than atmospheric pressure so that dry gas condenses on the surface of the workpiece;
  • Substituting a cleaning liquid by supplying a drying gas to the drying chamber in a state in which the inside of the drying chamber is depressurized and exhausted to a pressure lower than atmospheric pressure so that dry gas condenses on the surface of the workpiece;
  • the upper limit of the temperature of the dry gas supplied into the drying chamber is characterized in that less than the maximum allowable temperature (Tmax) of the workpiece.
  • the pressure inside the drying chamber is maintained below the saturated steam pressure of the liquid for drying gas at a predetermined drying temperature.
  • the dry gas liquid is IPA (IsoPropyl Alcohol), and when the dry gas is supplied to the drying chamber, the treatment temperature inside the drying chamber is maintained at a range of 55 ° C to 60 ° C.
  • IPA IsoPropyl Alcohol
  • a decompression exhaust unit connected to the drying chamber to depressurize the drying chamber
  • a vaporization apparatus for vaporizing a liquid for dry gas and supplying it to the drying chamber
  • the auxiliary heating device is further installed on the wall surface of the drying chamber.
  • the vent gas supply unit may be further provided with a vent gas heating unit.
  • the decompression exhaust unit is connected to the drying chamber is composed of a first stage decompression unit for reducing the first pressure to a pressure exceeding 0 atm, and a second stage decompression unit connected to the first stage decompression unit to further decompress the interior of the drying chamber It features.
  • a condenser for liquefying and discharging dry gas is installed between the drying chamber and the first stage pressure reducing unit, or between the first stage pressure reducing unit and the second stage pressure reducing unit.
  • a drainage portion may be connected to a lower portion of the drying chamber or the condenser.
  • the dry gas in the vaporized state is supplied after the drying chamber is sealed, so there is no danger of leaking into the atmosphere.
  • the pressure of the drying chamber is maintained at a reduced pressure lower than atmospheric pressure, thereby significantly reducing the possibility of fire due to flammable solvent leakage.
  • the cleaning liquid is replaced by a method of vaporizing a high purity dry gas liquid and condensing it on the surface of the workpiece, impurities such as particles are suspended in the liquid when the liquid liquid for dry gas is conventionally used. Or re-adsorption into the object to be treated.
  • the dry gas liquid used for substitutional drying is discharged to the outside through the lower part of the drying chamber, and a new high purity dry gas liquid is used for each processing object, resulting in a decrease in the concentration of the dry gas liquid. It is possible to prevent the occurrence of poor drying.
  • the amount of dry gas liquid used in comparison with the prior art that the dry gas liquid to waste water treatment and replacement with a new dry gas liquid at regular intervals in order to prevent drying defects due to dilution of the dry gas liquid. can be significantly reduced.
  • the workpiece to be sensitive to thermal deformation such as FMM
  • it is essential to process at a low temperature (below 60 °C) by reducing the boiling point of the liquid for drying gas through reduced pressure saturated steam of low temperature compared to normal pressure It is possible to prevent thermal deformation of the workpiece.
  • the dry state of the workpiece can be estimated by measuring the vacuum evacuation speed and the vacuum degree of arrival time of the drying chamber, it is possible to improve productivity through prevention of poor drying and optimization of drying time.
  • FIG. 1 is a configuration diagram showing an example of a drying process according to the prior art.
  • Example 2 is a flowchart illustrating a vacuum drying method according to Example 1 of the present invention.
  • FIG. 3 is a block diagram showing a vacuum drying method according to a first embodiment of the present invention.
  • FIG. 4 is a flowchart showing a vacuum drying method according to a second embodiment of the present invention.
  • FIG. 5 is a configuration diagram showing a vacuum drying method according to a second embodiment of the present invention.
  • Figure 6 is a block diagram showing a reduced pressure drying apparatus according to the present invention.
  • a cleaning liquid is loaded into a drying chamber 200 in which an upper portion of an object to be processed 100 remains on its surface.
  • Step S1 closing the upper door 210 of the drying chamber 200 to seal the drying chamber 200 (S2), evacuating the inside of the drying chamber 200 to a pressure lower than atmospheric pressure in one stage In this state, by supplying a dry gas to the drying chamber so that the dry gas condenses on the surface of the object 100 to replace the cleaning liquid (S3), by the dry gas condensed on the surface of the object 100
  • the step of stopping the supply of the dry gas (S4) the step of evacuating the drying chamber to a pressure lower than the pressure of the first stage decompression exhaust stage (S5), the two-stage decompression exhaust stop And air or inert gas (400) in the drying chamber (200).
  • IPA is used as a dry gas and nitrogen (N2) is used as an inert gas.
  • N2 is used as an inert gas.
  • the object 100 is a mask included in a display or a semiconductor manufacturing process.
  • the processing liquid 100 in which the cleaning liquid remains on the surface is loaded into the drying chamber 200 (S1).
  • the object 100 may be inserted through the opened upper door 210.
  • IPA IsoPropyl Alcohol
  • Step (S3) to the washing solution is dissolved in the condensed dry gas.
  • the cleaning liquid dissolved in the condensed dry gas liquid has a low surface tension and falls below the drying chamber 200.
  • Condensation on the surface of the workpiece 100 of the dry gas 300 is better when the temperature difference ⁇ T between the dry gas and the workpiece 100 is larger, and the dry gas 300 is closer to the saturated vapor pressure at the temperature. Get up.
  • the lower limit temperature of the dry gas may be higher than or equal to room temperature in consideration of condensation on the surface of the workpiece 100.
  • the temperature of the dry gas is set to the maximum allowable temperature (T_max) of the object 100 because the larger the temperature difference ⁇ T is advantageous for condensation and replacement of the dry gas.
  • the dry gas vapor partial pressure is proportional to the temperature, so the atmospheric pressure or the reduced pressure is the same, but the lower the pressure, the faster the diffusion rate, thus promoting the generation of dry gas, Since dry gas is efficiently delivered to the surface of the drying chamber and the object to be treated, it is preferable to vaporize the dry gas liquid under reduced pressure.
  • IPA boils at 82.5 ° C. at 1 atm, but at 55 ° C. at 0.3 atm.
  • the pressure of the drying chamber 200 is maintained at a reduced pressure of less than 1 atm, thereby significantly reducing the possibility of flammable solvent leakage and fire.
  • the cleaning liquid is replaced by vaporizing a high purity dry gas liquid and condensing it on the surface of the object 100, impurities, such as particles, which may occur when using a conventional method of immersing the liquid for dry gas, are contained in the liquid. It can be prevented from being suspended or resorbed to the workpiece.
  • the drying chamber is evacuated in two stages to a pressure lower than the pressure in the first stage depressurizing exhaust (S5).
  • the exhaust gas is exhausted to a near vacuum of 0 atm, and the dry gas used for substitutional drying and remaining on the surface of the object 100 is completely discharged to the outside.
  • the amount of dry gas liquid used is significantly increased compared to the conventional technology in which the dry gas liquid has to be treated with waste water and replaced with a new dry gas liquid. Can be reduced.
  • the decompression exhaust is stopped and air or an inert gas 400 with weak activity is supplied to the drying chamber 200 to restore the atmospheric pressure (S6).
  • N 2 nitrogen
  • Ar argon
  • Example 2 regarding a drying method
  • S1 ′ to S4 ′ of the second embodiment of the present invention are the same as the steps S1 to S4 of the first embodiment.
  • step S5 ' two-stage reduced-pressure exhaust is supplied while supplying a heated inert gas to the drying chamber 200 (S5').
  • the inert gas various kinds such as nitrogen (N 2 ) or argon (Ar) may be used, but it is necessary to determine the price in consideration of the price.
  • the heated temperature of the supplied inert gas may be maintained below the maximum allowable temperature (T_max) of the object 100 to prevent the object 100 from being thermally deformed.
  • IPA ethylene glycol dimethacrylate
  • the supply time of the vent gas can be reduced when restoring to atmospheric pressure in a subsequent process by maintaining the pressure (for example, 0.3 atm) of the first stage decompression exhaust step through the two stage decompression exhaust.
  • the FMM which is the object 100
  • condensation of the residual dry gas is prevented.
  • the amount of dry gas liquid used is significantly increased compared to the prior art in which the dry gas liquid has to be treated with waste water and replaced with a new dry gas liquid. Can be reduced.
  • the depressurizing exhaust is stopped and the air is inactivated to the drying chamber 200 or the inert gas 400 is restored to atmospheric pressure (S6 ').
  • the inert gas various kinds such as nitrogen (N 2 ) or argon (Ar) may be used, but it is necessary to determine the price in consideration of the price.
  • the reduced pressure drying apparatus 1000 of the present invention is connected to the drying chamber 200, the drying chamber 200 for receiving or withdrawing the object 100 through the opening 210, the drying chamber 200 Decompression exhaust unit 500 for depressurizing the inside of the), vaporization apparatus 600 for vaporizing the liquid for drying gas to supply to the drying chamber 200, and vent gas supply unit connected to the drying chamber 200 And 700.
  • the drying chamber 200 is a component for loading and storing the object 100 to be dried and installed therein so that the opening 210 is detachably installed at the upper portion so as to maintain the pressure below atmospheric pressure during sealing. do.
  • the decompression exhaust unit 500 is a component for reducing the pressure in the drying chamber 200 to below the atmospheric pressure connected to the drying chamber 200, the first stage pressure reducing unit to decompress the primary pressure at a pressure exceeding 0 atmosphere 510 and a second stage decompression unit 520 connected to the first stage decompression unit 510 to further decompress.
  • the first stage decompression unit 510 is a component for decompressing and evacuating to a pressure lower than atmospheric pressure when the dry gas 300 is supplied to the drying chamber 200 and the dry gas is condensed on the surface of the workpiece 100. .
  • a pressure control valve 530 is installed in the first pressure reducing part 510 and a pressure sensor 540 is installed in the drying chamber 200 to accurately maintain the pressure in the chamber below the saturated steam pressure at the processing temperature of the dry gas.
  • the vaporization efficiency can be improved.
  • the vaporization apparatus 600 is a component for vaporizing a liquid for dry gas and supplying it to the drying chamber 200.
  • the vaporizing device 600 is heated to a temperature higher than room temperature to vaporize a liquid for dry gas such as IPA, and then the drying chamber ( 200).
  • the vaporization apparatus 600 is vaporized while maintaining the maximum allowable temperature (Tmax) of the object to be processed, which is the upper limit temperature (for example, about 60 ° C. in the case of FMM), which is not subjected to thermal deformation. It is supposed to supply a dry gas.
  • Tmax the maximum allowable temperature of the object to be processed
  • the upper limit temperature for example, about 60 ° C. in the case of FMM
  • the dry gas supplied from the vaporization device 600 is condensed on the surface of the object 100 to maintain a relatively low temperature in the drying chamber 200 to replace the cleaning liquid such as DIW.
  • Vent gas supply unit 700 is connected to the drying chamber 200 to supply air or an inert gas to the drying chamber 200.
  • the vent gas supply unit 700 supplies an inert gas (eg, nitrogen (N 2 )) heated together with reduced pressure exhaust in the drying chamber 200 when the dry gas is condensed on the surface of the object 100 to be processed.
  • an inert gas eg, nitrogen (N 2 )
  • air or an inert gas for example, nitrogen (N 2 ), etc.
  • vent gas supply unit 700 may be further provided with a vent gas heating unit 710 for heating the inert gas.
  • auxiliary heating device 220 may be additionally installed on the wall surface of the drying chamber 200.
  • the auxiliary heating apparatus 220 may improve the use efficiency of the dry gas by minimizing the amount of the dry gas liquid condensed on the wall of the drying chamber, and maintain the atmosphere in the gas chamber 200 calmly.
  • a condenser 550 is installed between the drying chamber 200 and the first stage pressure reducing unit 510 or between the first stage pressure reducing unit 510 and the second stage pressure reducing unit 520 to liquefy and discharge dry gas. Since the vaporized dry gas vapor is cooled through the cooling device inside the condenser and condensed into the liquid phase, the load caused by the vapor flowing into the first stage decompression unit 510 or the second stage decompression unit 520 is reduced. can do.
  • a drain 560 is connected to the lower portion of the drying chamber 200 or the condenser 550 to discharge the waste dry gas liquid to the outside for disposal or recycling.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

La présente invention concerne un procédé de séchage à pression réduite et un appareil de séchage à pression réduite, et est caractérisé en ce que le procédé de séchage à pression réduite comprend les étapes consistant à : charger un objet de traitement cible avec une solution de nettoyage laissée sur sa surface dans une chambre de séchage; sceller la chambre de séchage; substituer la solution de nettoyage par fourniture de gaz de séchage dans la chambre de séchage de telle sorte que le gaz de séchage est condensé sur la surface de l'objet de traitement cible tout en évacuant et en réduisant la pression à l'intérieur de la chambre de séchage en une seule étape de telle sorte que la pression est inférieure à la pression atmosphérique; arrêter l'alimentation en gaz de séchage si la substitution de solution de nettoyage à l'aide du gaz de séchage condensé sur la surface de l'objet de traitement cible est achevée; évacuer et réduire la pression à l'intérieur de la chambre de séchage en deux étapes de telle sorte que la pression est inférieure à la pression réduite en une seule étape; arrêter l'évacuation et la réduction de la pression en deux étapes, et fournir de l'air ou un gaz inerte à la chambre de séchage de façon à rétablir la pression à la pression atmosphérique; et retirer l'objet de traitement cible de la chambre de séchage, et un appareil de séchage par décompression pour réaliser le procédé. Par conséquent, le gaz de séchage est fourni dans un état vaporisé après que la chambre de séchage a été scellée, et il n'y a donc pas de risque de fuite vers l'atmosphère; et la pression à l'intérieur de la chambre de séchage est maintenue dans un état de pression réduite (inférieure à la pression atmosphérique) même pendant un processus de séchage, et présente ainsi un effet avantageux de réduction significative du risque d'incendie dû à des fuites de solvant inflammable.
PCT/KR2017/002559 2016-12-28 2017-03-09 Appareil de séchage à pression réduite et procédé de séchage à pression réduite Ceased WO2018124392A1 (fr)

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KR10-2016-0181305 2016-12-28
KR1020160181305A KR101753166B1 (ko) 2016-12-28 2016-12-28 감압 건조장치 및 감압 건조방법

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JP6509315B1 (ja) * 2017-12-20 2019-05-08 アクトファイブ株式会社 蒸気洗浄後のワーク乾燥判定方法及び蒸気洗浄真空乾燥装置
CN110946542A (zh) * 2018-09-26 2020-04-03 杨婇琳 鞋材清洗干燥装置
CN110828343A (zh) * 2019-10-30 2020-02-21 苏州晶洲装备科技有限公司 一种基板干燥装置和方法
CN115181155B (zh) * 2022-07-27 2023-08-15 河南利华制药有限公司 一种泼尼松龙磷酸钠的制备方法
KR102740918B1 (ko) 2022-08-26 2024-12-10 (주)씨에스피 Oled용 마스크 건조 장치
KR102830376B1 (ko) 2023-09-19 2025-07-07 주식회사 디바이스 Oled 마스크 건조장치 및 건조방법

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CN108253733A (zh) 2018-07-06
CN108253733B (zh) 2020-09-25

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