WO2018123388A1 - 感放射線性組成物、パターン形成方法並びに金属含有樹脂及びその製造方法 - Google Patents
感放射線性組成物、パターン形成方法並びに金属含有樹脂及びその製造方法 Download PDFInfo
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- WO2018123388A1 WO2018123388A1 PCT/JP2017/042469 JP2017042469W WO2018123388A1 WO 2018123388 A1 WO2018123388 A1 WO 2018123388A1 JP 2017042469 W JP2017042469 W JP 2017042469W WO 2018123388 A1 WO2018123388 A1 WO 2018123388A1
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- 0 CCC*CCCC1CCCC1 Chemical compound CCC*CCCC1CCCC1 0.000 description 3
- WKWHHKRLYYVUTJ-UHFFFAOYSA-N CCCC(CCOC(C)=O)N Chemical compound CCCC(CCOC(C)=O)N WKWHHKRLYYVUTJ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/42—Introducing metal atoms or metal-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/12—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing tin
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Definitions
- the present invention relates to a radiation-sensitive composition, a pattern forming method, a metal-containing resin, and a method for producing the same.
- Radiation sensitive compositions used for microfabrication by lithography are exposed to irradiated parts such as deep ultraviolet rays such as ArF excimer laser light and KrF excimer laser light, electromagnetic waves such as extreme ultraviolet rays (EUV), and charged particle beams such as electron beams.
- An acid is generated in the substrate, and a chemical reaction using the acid as a catalyst causes a difference in the dissolution rate of the exposed portion and the unexposed portion with respect to the developer, thereby forming a pattern on the substrate.
- Such a radiation-sensitive composition is required to improve the resist performance as the processing technique becomes finer.
- the types and molecular structures of polymers, acid generators and other components used in the composition have been studied, and further their combinations have been studied in detail (Japanese Patent Application Laid-Open No. 11-125907, special features). (See Kaihei 8-146610 and JP-A 2000-298347).
- the radiation-sensitive composition is required to have various resist performances, especially for exposure light such as electron beams and EUV. It is required to have high sensitivity, excellent particle suppression, and low generation of particles, which are insoluble matters causing defects and the like over time. Furthermore, the occurrence of repelling, coating unevenness, halation, etc. is suppressed, and the coating property is excellent, the occurrence of defects in the obtained film is small, the defect suppressing property is excellent, and these coating properties and defect suppression are also achieved. Therefore, it is required that the properties be maintained even after long-term storage and excellent in storage stability. However, the above-mentioned conventional radiation-sensitive composition cannot satisfy all of these requirements.
- the present invention has been made on the basis of the circumstances as described above, and its purpose is excellent in sensitivity and particle suppression, as well as coating property and defect suppression, and can maintain these performances for a long period of time. It is providing the manufacturing method of a radiation sensitive composition, a pattern formation method, metal containing resin, and metal containing resin.
- the invention made to solve the above problems is used for extreme ultraviolet light or electron beam exposure, and includes a first polymer (hereinafter also referred to as “[A] polymer”) and a solvent (hereinafter referred to as “[B] solvent”).
- the polymer [A] is a carbon atom bonded to one or a plurality of metal atoms by a chemical bond and unsaturated.
- a first structural unit containing a carbon atom that does not form a bond hereinafter also referred to as “structural unit (I)”
- structural unit (I) A first structural unit containing a carbon atom that does not form a bond
- at least one of the chemical bonds is a covalent bond .
- Another invention made to solve the above problems is a process of applying the radiation-sensitive composition on one surface side of the substrate, a process of exposing the film formed by the coating process, and And a step of developing the exposed film.
- Still another invention made in order to solve the above-described problem is one or more metal atoms, and a carbon atom bonded to the metal atom by a chemical bond and does not constitute an unsaturated bond;
- a metal-containing resin having a structural unit (structural unit (I)) containing at least one of the chemical bonds is a covalent bond.
- Yet another invention made to solve the above-mentioned problems is a method for producing the metal-containing resin, comprising a step of forming a polymer main chain by chain polymerization with radicals, anions or cations. To do.
- the radiation-sensitive composition of the present invention is excellent in sensitivity and particle suppression properties, is excellent in coating properties and defect suppression properties, and can maintain these performances for a long time.
- a pattern with few defects can be formed.
- the metal-containing resin of the present invention can be suitably used as a polymer component of the radiation-sensitive composition. According to the method for producing a metal-containing resin of the present invention, the metal-containing resin can be produced easily and with high yield. Therefore, these can be suitably used for manufacturing semiconductor devices that are expected to be further miniaturized in the future.
- the said radiation sensitive composition is a radiation sensitive composition used for extreme ultraviolet rays or electron beam exposure.
- the said radiation sensitive composition contains a [A] polymer and a [B] solvent.
- the radiation-sensitive composition may contain a radiation-sensitive acid generator (hereinafter, also referred to as “[C] acid generator”) as a suitable component, and in a range not impairing the effects of the present invention, Other optional components may be contained. Hereinafter, each component will be described.
- the polymer is a polymer (metal-containing resin) having the structural unit (I).
- “Polymer” refers to a chain-like compound having two or more structural units and having a main chain, and does not include a compound in which structural units such as clusters are linked to a ring or the like.
- the “main chain” means the longest chain of atoms of the [A] polymer.
- the “side chain” means a chain of atoms of [A] polymer other than the main chain.
- the [A] polymer has the structural unit (I), so that the sensitivity and particle suppression are excellent, and the coating property and defect suppression are also excellent, and these performances are long. It can be maintained for a long period of time (hereinafter, the characteristics that can maintain these performances for a long time are also referred to as “storage stability”).
- storage stability the characteristics that can maintain these performances for a long time are also referred to as “storage stability”.
- the [A] polymer has a structural unit (I), and in the structural unit (I), one or a plurality of metal atoms and a carbon atom bonded to the metal atom by a chemical bond, Carbon atoms that do not constitute an unsaturated bond, and at least one of the chemical bonds is a covalent bond.
- the polymer Since the polymer has a covalent bond between carbon atoms that do not constitute such a metal-unsaturated bond, it is cleaved into radicals by exposure to EUV, electron beam, etc., and these radicals are [A It is considered that the polymer has a high molecular weight by bonding between the polymers, and the solubility in the developer changes.
- the radiation-sensitive composition can improve the sensitivity, and the structural change when the [A] polymer is not exposed is suppressed, so that generation of particles is suppressed. Moreover, since such a [A] polymer is a compound which has moderate polarity, it is excellent in coating property. Furthermore, according to the radiation-sensitive composition, it is possible to form a pattern with few defects due to the above-described particle suppression property and the like, and the above-described structural change when not exposed is suppressed. As a result, it is considered that the coating property and the defect suppressing property are maintained for a long period of time and the storage stability is excellent.
- the polymer has a structural unit (II) containing a polar group, a structural unit (III) containing a crosslinkable group, and a structural unit (IV) containing an acid dissociable group. It may have other structural units other than (I) to (IV). Hereinafter, each structural unit will be described.
- the structural unit (I) is composed of one or more metal atoms and a carbon atom that is bonded to the metal atom by a chemical bond and does not constitute an unsaturated bond (hereinafter referred to as “carbon atom (A)”.
- a structural unit in which at least one of the chemical bonds is a covalent bond.
- “Chemical bonds” are classified into covalent bonds and ionic bonds.
- the term “covalent bond” refers to a chemical bond in which the Pauling electronegativity difference between two bonded atoms is 1.6 or less.
- “Ion bond” refers to a chemical bond in which the Pauling electronegativity difference between the two atoms to be bonded exceeds 1.6.
- metal atoms examples include group 1 to group 16 metal atoms. This metal atom does not include metalloid atoms (boron, silicon, arsenic, tellurium and astatine).
- the metal atom is preferably a metal atom of Group 13 to Group 16, which is the same group as the carbon atom which is a non-metal atom, and from the viewpoint of forming a covalent bond with an appropriate strength, the Group 14 atom is more preferable. preferable.
- the metal atom is preferably a metal atom having a fourth period or more from the viewpoint that a covalent bond with a more appropriate strength can be formed with a nonmetal atom, and the metal atoms in the fourth period, the fifth period, and the sixth period are More preferred.
- the metal atom tin, germanium and lead are preferable.
- Examples of the carbon atom (A) include, for example, a carbon atom that is bonded to another atom by a single bond only.
- a carbon atom of a methyl group a carbon atom of a methanediyl group, a carbon atom of a methanetriyl group, methanetetrayl And carbon atoms of the group.
- Non-metal atoms that may be bonded to metal atoms in addition to carbon atom (A) include, for example, carbon atoms, oxygen atoms, nitrogen atoms, sulfur atoms, phosphorus atoms, selenium atoms, halogen atoms constituting unsaturated bonds. Etc.
- Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- bonds formed by nonmetal atoms other than the metal atom (M) and the carbon atom (A) bonded to the metal bond by a chemical bond include, for example, MC (carbon atom constituting an unsaturated bond). Bond, MO bond, MN bond, MS bond, MP bond, M-Se bond, MX (X is a halogen atom) and the like. Of these, the MC bond and the MO bond are preferable.
- the metal atom is a tin atom, a germanium atom, or a lead atom (M ′), as the bond formed by the metal atom and a non-metal atom other than the carbon atom (A) bonded to the metal atom by a chemical bond, for example, Sharing of M'-C (carbon atom constituting unsaturated bond) bond, M'-O bond, M'-N bond, M'-S bond, M'-P bond, M'-Se atom, etc. Examples include bonding. Among these, M′—C bond and M′—O bond are preferable from the viewpoint of a moderately strong covalent bond.
- At least one of the chemical bonds between the metal atom and the carbon atom (A) in the structural unit (I) is a covalent bond, but all the chemical bonds between the metal atom and the carbon atom (A) are covalent bonds. preferable.
- the sensitivity of the said radiation sensitive composition can be improved more by making all the chemical bonds into a covalent bond.
- the polymer may have a metal atom in either the main chain or the side chain.
- Examples of the structural unit (I) include structural units represented by the following formulas (1-1) to (1-3) (hereinafter also referred to as “structural units (I-1) to (I-3)”) and the like. Is mentioned.
- the structural unit (1-1) has a metal atom in the main chain.
- the structural units (I-2) and (I-3) have a metal atom in the side chain.
- M is a metal atom.
- R 1 is a monovalent organic group having 1 to 20 carbon atoms.
- n is an integer of 1 to 4. When n is 2 or more, the plurality of R 1 may be the same or different. At least one of one or a plurality of R 1 is bonded to M at the carbon atom (A).
- L 1 and L 2 are each independently a divalent linking group having 1 to 30 atoms.
- R 2 is a monovalent organic group having 1 to 20 carbon atoms.
- m is an integer of 1 to 4. When m is 2 or more, the plurality of R 2 may be the same or different.
- At least one of L 1 , L 2 and one or more R 2 is bonded to M at the carbon atom (A).
- R A is a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms.
- L 3 is a divalent linking group having 1 to 30 atoms.
- R 3 is a monovalent organic group having 1 to 20 carbon atoms.
- p is an integer of 1 to 5. When p is 2 or more, the plurality of R 3 may be the same or different.
- At least one of L 3 and one or more R 3 is bonded to M at the carbon atom (A).
- Organic group refers to a group containing at least one carbon atom.
- the “hydrocarbon group” includes a chain hydrocarbon group, an alicyclic hydrocarbon group, and an aromatic hydrocarbon group.
- the “hydrocarbon group” may be a saturated hydrocarbon group or an unsaturated hydrocarbon group.
- the “chain hydrocarbon group” refers to a hydrocarbon group that does not include a cyclic structure and is composed only of a chain structure, and includes both a straight chain hydrocarbon group and a branched chain hydrocarbon group.
- alicyclic hydrocarbon group refers to a hydrocarbon group that includes only an alicyclic structure as a ring structure and does not include an aromatic ring structure, and includes a monocyclic alicyclic hydrocarbon group and a polycyclic alicyclic group. Includes both hydrocarbon groups. However, it is not necessary to be composed only of the alicyclic structure, and a part thereof may include a chain structure.
- “Aromatic hydrocarbon group” refers to a hydrocarbon group containing an aromatic ring structure as a ring structure. However, it is not necessary to be composed only of an aromatic ring structure, and a part thereof may include a chain structure or an alicyclic structure.
- the metal atom represented by M is preferably a Group 1 to Group 16 metal atom, more preferably a Group 13 to Group 15 metal atom, still more preferably a Group 14 metal atom, tin, germanium. And lead are particularly preferred.
- Examples of the monovalent organic group having 1 to 20 carbon atoms represented by R 1 , R 2, and R 3 include, for example, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a carbon-carbon space of the hydrocarbon group, or A group ( ⁇ ) containing a divalent heteroatom-containing group at the terminal of the bond side, a group in which part or all of the hydrogen atoms of the hydrocarbon group and group ( ⁇ ) are substituted with a monovalent heteroatom-containing group Etc.
- Examples of the monovalent hydrocarbon group having 1 to 20 carbon atoms include a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, and 6 carbon atoms. And 20 monovalent aromatic hydrocarbon groups.
- Examples of the monovalent chain hydrocarbon group having 1 to 20 carbon atoms include alkyl groups such as a methyl group, an ethyl group, an n-propyl group, and an i-propyl group; An alkenyl group such as an ethenyl group, a propenyl group, a butenyl group; Examples thereof include alkynyl groups such as ethynyl group, propynyl group and butynyl group.
- Examples of the monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms include monocyclic alicyclic saturated hydrocarbon groups such as a cyclopentyl group, a cyclohexyl group, a cyclopentylmethyl group, and a cyclohexylmethyl group; Monocyclic alicyclic unsaturated hydrocarbon groups such as cyclopentenyl group and cyclohexenyl group; A polycyclic alicyclic saturated hydrocarbon group such as a norbornyl group, an adamantyl group, a tricyclodecyl group, a norbornan-2-ylmethyl group, an adamantylmethyl group; Examples thereof include polycyclic alicyclic unsaturated hydrocarbon groups such as a norbornenyl group and a tricyclodecenyl group.
- Examples of the monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms include aryl groups such as a phenyl group, a tolyl group, a xylyl group, a naphthyl group, and an anthryl group; Examples thereof include aralkyl groups such as benzyl group, phenethyl group, naphthylmethyl group and anthrylmethyl group.
- hetero atom constituting the monovalent and divalent heteroatom-containing group examples include an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, and a halogen atom.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- divalent heteroatom-containing group examples include —O—, —CO—, —S—, —CS—, —NR′—, a group in which two or more of these are combined, and the like.
- R ' is a hydrogen atom or a monovalent hydrocarbon group. Of these, —O— is preferable.
- Examples of the monovalent heteroatom-containing group include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, hydroxy group, carboxy group, cyano group, amino group, sulfanyl group (—SH) and the like. Among these, a cyano group and a fluorine atom are preferable.
- R 1 , R 2 and R 3 are preferably monovalent hydrocarbon groups having 1 to 20 carbon atoms, monovalent chain hydrocarbon groups having 1 to 20 carbon atoms and monovalent hydrocarbon groups having 6 to 20 carbon atoms.
- An aromatic hydrocarbon group is more preferable, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and an aralkyl group having 7 to 20 carbon atoms are more preferable, and a methyl group, an n-butyl group, an allyl group, and A benzyl group is particularly preferred.
- those bonded to M at the carbon atom (A) include, for example, alkyl groups such as methyl group and n-butyl group Group, allyl group, etc., where the carbon atom of the bond does not form a double bond, aralkyl group such as benzyl group, etc., and part or all of the hydrogen atoms of these groups are substituted with monovalent substituents And the like.
- alkyl groups such as methyl group and n-butyl group Group, allyl group, etc., where the carbon atom of the bond does not form a double bond
- aralkyl group such as benzyl group, etc.
- part or all of the hydrogen atoms of these groups are substituted with monovalent substituents And the like.
- an alkyl group, an allyl group, and an aralkyl group are preferable, and a methyl group, an n-butyl group, an allyl group, and a benzyl group are more preferable.
- Examples of the divalent linking group having 1 to 30 atoms include —O—, —NR′—, —S—, and divalent organic groups having 1 to 20 carbon atoms.
- R ′ is a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms.
- Examples of the divalent organic group having 1 to 20 carbon atoms of L 1 , L 2 and L 3 include one hydrogen atom from the monovalent organic group having 1 to 20 carbon atoms of the above R 1 , R 2 and R 3. Examples include groups other than atoms.
- those bonded to M at the carbon atom (A) include, for example, a carbon atom bonded to M is a methanediyl group, The case where a methanetriyl group, a methanetetrayl group, etc. are comprised is mentioned.
- Examples of the monovalent organic group having 1 to 10 carbon atoms represented by R A include carbons among the groups exemplified as the monovalent organic group having 1 to 20 carbon atoms of R 1 , R 2 and R 3 above. Examples thereof include groups of 1 to 10.
- R A is preferably a hydrogen atom or a chain hydrocarbon group having 1 to 5 carbon atoms.
- n is preferably from 2 to 4, and more preferably 2 and 3.
- m is preferably from 2 to 4, and more preferably 2 and 3.
- p is preferably 2 to 5, more preferably 2 to 4, and still more preferably 2 and 3.
- structural units represented by the following formulas (1-1-1) to (1-1-5) are structural units (I-2) Are represented by the following formulas (1-2-1), and the structural units (I-3) are represented by the following formulas (1-3-1) to (1-3-6): Examples include structural units.
- the structural unit (I-1) can be formed, for example, by hydrolysis and / or hydrolysis condensation of a compound represented by the following formula (1) (hereinafter also referred to as “compound (I)”).
- the said radiation sensitive composition can improve a sensitivity more by forming a [A] polymer from compound (I).
- M is tin, germanium or lead.
- L is a single bond or a linking group.
- R is a group having an unsaturated bond or a halogenated hydrocarbon group.
- a is an integer of 1 to 3.
- a is 2 or more, a plurality of R may be the same or different, and a plurality of L may be the same or different.
- X is a hydrolyzable group or a crosslinkable group selected from a halogen atom, an alkoxy group and a carboxylate group.
- b is an integer of 1 to 5. When b is 2 or more, the plurality of Xs may be the same or different.
- the number of carbon atoms of the linking group of L is preferably 0 to 10, more preferably 1 to 10, still more preferably 1 to 5, and particularly preferably 1 to 3.
- linking group represented by L examples include alkanediyl groups such as linear alkanediyl groups and branched alkanediyl groups.
- linear alkanediyl group examples include a methanediyl group, 1,2-ethanediyl group, 1,3-propanediyl group, 1,4-butanediyl group, 1,5-pentanediyl group and the like.
- Examples of the branched alkanediyl group include a group represented by the following formula (L-1) and a group represented by the following formula (L-2).
- R L is a single bond or an alkanediyl group having 1 to 7 carbon atoms. * Shows the site
- RL a single bond and a linear alkanediyl group are preferable, and a single bond is more preferable.
- L is preferably a linking group, more preferably an alkanediyl group, still more preferably an alkanediyl group having 1 to 5 carbon atoms, and particularly preferably a methanediyl group.
- Examples of the unsaturated bond of the group having an unsaturated bond represented by R include carbon-carbon double bonds such as ethylenic double bonds and aromatic double bonds, carbon-oxygen double bonds, and carbon-nitrogen.
- a double bond such as a double bond; a carbon-carbon triple bond such as an acetylenic triple bond; a triple bond such as a carbon-nitrogen triple bond; Among these, a carbon-carbon double bond and a carbon-nitrogen triple bond are preferable, an ethylenic double bond, an aromatic double bond and a carbon-nitrogen triple bond are more preferable, and an ethylenic double bond is more preferable.
- Examples of the group having an unsaturated bond represented by R include an ethylenic double bond-containing group such as an ethenyl group and a (meth) acryl group; An acetylenic triple bond-containing group such as an ethynyl group; A carbon-carbon double bond-containing group such as an aromatic-containing group such as a phenyl group, a tolyl group, a naphthyl group, and a hydroxyphenyl group; Carbon-oxygen double bond-containing groups such as carbonyl groups, And a carbon-nitrogen triple bond-containing group such as a cyano group.
- an ethylenic double bond-containing group such as an ethenyl group and a (meth) acryl group
- An acetylenic triple bond-containing group such as an ethynyl group
- a carbon-carbon double bond-containing group such as an aromatic-containing group such as a phenyl group, a tolyl group,
- a carbon-carbon double bond-containing group and a carbon-nitrogen triple bond-containing group are preferable, an ethylenic double bond-containing group, an aromatic-containing group, and a carbon-nitrogen triple bond-containing group are more preferable, and ethylenic A double bond-containing group and an aromatic-containing group are more preferable, and an ethenyl group and phenyl are particularly preferable.
- halogenated hydrocarbon group represented by R examples include fluorinated hydrocarbon groups such as a fluoromethyl group, a trifluoromethyl group, and a fluorophenyl group; Chlorinated hydrocarbon groups such as chloromethyl group, trichloromethyl group, chlorophenyl group; Brominated hydrocarbon groups such as bromomethyl group, tribromomethyl group, bromophenyl group; Examples thereof include iodinated hydrocarbon groups such as iodomethyl group, triiodomethyl group and iodophenyl group. Among these, a fluorinated hydrocarbon group is preferable, and a trifluoromethyl group is more preferable.
- the carbon atom constituting the unsaturated bond in R or the carbon atom to which the halogen atom in the halogenated hydrocarbon group of R is bonded is directly bonded to L.
- the sensitivity of the radiation-sensitive composition can be further improved.
- A is preferably 1 or 2, and more preferably 2.
- b, 2 and 3 are preferable and 2 is more preferable.
- a + b is usually 6 or less, and preferably 4 or less.
- X is preferably a halogen atom, more preferably a chlorine atom.
- the content rate of structural unit (I) 10 mol% is preferable with respect to all the structural units which comprise a [A] polymer, 30 mol% is more preferable, 40 mol% is further more preferable, and 50 mol% % Is particularly preferred.
- 100 mol% is preferable, 90 mol% is more preferable, 80 mol% is further more preferable, 70 mol% is especially preferable.
- the structural unit (II) is a structural unit containing a polar group (except for those corresponding to the structural unit (I)).
- the polymer further has the structural unit (II) in addition to the structural unit (I), so that the solubility in the developer can be adjusted more appropriately.
- the radiation-sensitive composition It is possible to further improve the particle suppression property, coating property, defect suppression property and storage stability of the object.
- Examples of the polar group include a hydroxyl group, an amino group, an imino group, a cyano group, and a carbonyl group.
- the hydroxyl group includes both alcoholic hydroxyl groups and phenolic hydroxyl groups. Of these, phenolic hydroxyl groups, imino groups and carbonyl groups are preferred.
- structural unit (II) examples include a structural unit containing a phenolic hydroxyl group (hereinafter also referred to as “structural unit (II-1)”), a structural unit containing an alcoholic hydroxyl group (hereinafter referred to as “structural unit (II-2)”). And a structural unit derived from a maleimide compound (hereinafter also referred to as “structural unit (II-3)”).
- Examples of the structural unit (II-1) include a structural unit represented by the following formula (2).
- R B is a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms.
- E 1 is a single bond, —O— or a divalent organic group having 1 to 20 carbon atoms.
- Ar 1 is an arenediyl group having 6 to 20 carbon atoms.
- q is an integer of 1 to 3.
- the R B a hydrogen atom is preferable.
- E 1 is preferably a single bond, —O— or —COO—, and more preferably a single bond.
- Examples of the arenediyl group having 6 to 20 carbon atoms represented by Ar 1 include a benzenediyl group, a naphthalenediyl group, an anthracenediyl group, a phenanthrenediyl group, and a pyrenediyl group. Among these, a benzenediyl group and a naphthalenediyl group are preferable, and a benzenediyl group is more preferable.
- Q is preferably 1 or 2, and more preferably 1.
- Examples of the structural unit (II-1) include a structural unit derived from hydroxystyrene and a structural unit derived from hydroxyvinylnaphthalene. Of these, structural units derived from hydroxystyrene are preferred.
- Examples of the structural unit (II-2) include a structural unit derived from 2-hydroxyethyl (meth) acrylate, a structural unit derived from 3-hydroxyadamantan-1-yl (meth) acrylate, and 4-hydroxycyclohexane-1- Examples include structural units derived from yl (meth) acrylate. Of these, structural units derived from 3-hydroxyadamantan-1-yl (meth) acrylate are preferred.
- Examples of the structural unit (II-3) include a structural unit represented by the following formula (4).
- the structural unit (II-3) has a carbonyl group and an imino group as polar groups.
- R W is a monovalent organic group having 1 to 20 carbon atoms.
- the monovalent organic group for example, the R 1, R 2 and monovalent those exemplified as the organic group and the same group having 1 to 20 carbon atoms R 3 having 1 to 20 carbon atoms represented by R W Etc.
- the R W preferably a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 20 carbon atoms, a phenyl group is particularly preferred.
- the lower limit of the content ratio of the structural unit (II) is preferably 5 mol%, more preferably 10 mol%, further preferably 20 mol%, particularly preferably 30 mol%.
- 80 mol% is preferable, 60 mol% is more preferable, 50 mol% is further more preferable, 40 mol% is especially preferable.
- the structural unit (III) is a structural unit containing a crosslinkable group (except for those corresponding to the structural unit (I)). “Crosslinkable group” refers to a group capable of forming a covalent bond within a molecule and / or between molecules. [A] The polymer further has the structural unit (III) in addition to the structural unit (I), so that the molecular weight is appropriately increased by curing. As a result, the particle suppression property, coating property, defect suppression property, and storage stability of the radiation-sensitive composition can be further improved.
- crosslinkable group examples include epoxy groups such as an oxiranyl group and an oxetanyl group; Polymerizable carbon-carbon double bond-containing groups such as vinyl group, allyl group, styryl group, (meth) acryloyl group; And carbon-carbon triple bond-containing groups such as an ethynyl group and a propargyl group.
- the lower limit of the content ratio of the structural unit (III) is preferably 5 mol%, more preferably 10 mol%, further preferably 15 mol%, and particularly preferably 20 mol%.
- As an upper limit of the said content rate 60 mol% is preferable, 50 mol% is more preferable, 40 mol% is further more preferable, 30 mol% is especially preferable.
- the structural unit (IV) is a structural unit containing an acid dissociable group.
- the “acid-dissociable group” refers to a group that replaces a hydrogen atom such as a carboxy group or a phenolic hydroxyl group and dissociates by the action of an acid.
- the polymer can adjust the solubility in the developer more appropriately, and as a result, the particle suppression property, the coating property of the radiation sensitive composition, Defect suppression and storage stability can be further improved.
- Examples of the structural unit (IV) include a structural unit represented by the following formula (3).
- R C is a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms.
- R X is a monovalent hydrocarbon group having 1 to 20 carbon atoms.
- R Y and R Z are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms, or a ring member having 3 to 3 ring atoms composed of these groups together with the carbon atom to which they are bonded. 20 ring structures are represented.
- Numberer of ring members means the number of atoms constituting the ring of the alicyclic structure, aromatic ring structure, aliphatic heterocyclic structure and aromatic heterocyclic structure, and in the case of polycyclic, the number of atoms constituting this polycyclic ring Say.
- R C is preferably a hydrogen atom and a methyl group, and more preferably a methyl group, from the viewpoint of copolymerization of the monomer that gives the structural unit (IV).
- R X is preferably a monovalent hydrocarbon group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and a methyl group, an ethyl group, or a phenyl group. Further preferred.
- R Y and R Z are preferably monovalent hydrocarbon groups having 1 to 20 carbon atoms, monovalent chain hydrocarbon groups having 1 to 10 carbon atoms, and monovalent alicyclic groups having 3 to 20 carbon atoms.
- a hydrocarbon group is more preferable, an alkyl group having 1 to 10 carbon atoms and an alicyclic saturated hydrocarbon group having 3 to 20 carbon atoms are further preferable, and a methyl group, an ethyl group, and an adamantyl group are particularly preferable.
- Examples of the ring structure having 3 to 20 ring members formed by combining R Y and R Z groups include a monocyclic saturated alicyclic structure such as a cyclopentane structure and a cyclohexane structure, a norbornane structure and an adamantane structure. Examples thereof include a saturated alicyclic structure of a ring. Among these, a monocyclic saturated alicyclic structure is preferable, a cycloalkane structure is more preferable, and a cyclohexane structure is more preferable.
- the lower limit of the content ratio of the structural unit (IV) is preferably 5 mol%, more preferably 10 mol%, further preferably 15 mol%, and particularly preferably 20 mol%.
- As an upper limit of the said content rate 60 mol% is preferable, 50 mol% is more preferable, 40 mol% is further more preferable, 30 mol% is especially preferable.
- the polymer may have other structural units other than the structural units (I) to (IV).
- other structural units include structural units containing a non-dissociable hydrocarbon group.
- As an upper limit of the content rate of another structural unit 20 mol% is preferable with respect to all the structural units which comprise a [A] polymer, and 10 mol% is more preferable.
- the [A] polymer includes the following formulas (i-1-1) to (i-1-7), (i-2-1) and (i-3-1) to ( and compounds represented by i-3-9).
- the lower limit of the weight average molecular weight (Mw) of the polymer is preferably 700, more preferably 1,000, still more preferably 1,200, and particularly preferably 1,400.
- the upper limit of the Mw is preferably 20,000, more preferably 10,000, further preferably 8,000, and particularly preferably 7,000.
- the metal-containing resin can also be produced simply and with high yield by a method for producing a metal-containing resin comprising a step of forming a polymer main chain by chain polymerization with radicals, anions or cations.
- the polymer has the structural unit (I-2) and / or the structural unit (I-3), it contains, for example, a metal atom that gives the structural unit (I-2) and / or (I-3)
- a compound having a polymerizable carbon-carbon double bond and, if necessary, another monomer are subjected to a chain polymerization reaction with a radical, anion or cation to form a polymer main chain.
- chain polymerization reactions include radical polymerization initiators such as dimethyl 2,2′-azobis (2-methylpropionate) and 2,2′-azobisisobutyronitrile, and anionic polymerization such as n-butyllithium.
- An initiator a cationic polymerization initiator such as cyclohexyl p-toluenesulfonate, and the like can be used in an appropriate solvent such as toluene, 2-butanone, and tetrahydrofuran.
- the temperature of the chain polymerization reaction is, for example, from ⁇ 20 ° C. to 150 ° C. in radical polymerization, from ⁇ 100 ° C. to 50 ° C. in anionic polymerization, and from ⁇ 120 ° C. to 50 ° C. in cationic polymerization.
- the time for the chain polymerization reaction is, for example, 10 minutes to 24 hours, and preferably 1 hour to 12 hours.
- a solvent will not be specifically limited if it is a solvent which can melt
- the solvent the solvent used when the [A] polymer is synthesized may be used.
- Examples of the solvent include alcohol solvents, ether solvents, ketone solvents, amide solvents, ester solvents, hydrocarbon solvents, and the like.
- alcohol solvents examples include methanol, ethanol, n-propanol, iso-propanol, n-butanol, iso-butanol, sec-butanol, tert-butanol, n-pentanol, iso-pentanol, etc.
- Polyhydric alcohol solvents having 1 to 10 carbon atoms such as ethylene glycol, 1,2-propylene glycol, 1,3-butylene glycol, 2,4-pentanediol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol ;
- Polyhydric alcohol partial ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether System solvents and the like.
- ether solvents examples include dialkyl ether solvents such as diethyl ether, dipropyl ether, and dibutyl ether; Cyclic ether solvents such as tetrahydrofuran and tetrahydropyran; And aromatic ring-containing ether solvents such as diphenyl ether and anisole.
- ketone solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-iso-butyl ketone, 2-heptanone, ethyl-n-butyl ketone, methyl-n-hexyl ketone, Chain ketone solvents such as di-iso-butyl ketone and trimethylnonanone: Cyclic ketone solvents such as cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone and methylcyclohexanone: Examples include 2,4-pentanedione, acetonylacetone, acetophenone, and the like.
- amide solvent examples include cyclic amide solvents such as N, N′-dimethylimidazolidinone and N-methylpyrrolidone; Examples thereof include chain amide solvents such as N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, and N-methylpropionamide.
- cyclic amide solvents such as N, N′-dimethylimidazolidinone and N-methylpyrrolidone
- chain amide solvents such as N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, and N-methylpropionamide.
- ester solvents include acetate solvents such as methyl acetate, ethyl acetate, n-propyl acetate, iso-propyl acetate, n-butyl acetate, iso-butyl acetate, sec-butyl acetate; Polyhydric alcohol partial ethers such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate Carboxylate solvents; Lactone solvents such as ⁇ -butyrolactone and ⁇ -valerolactone; Carbonate solvents such as dimethyl carbonate, diethyl carbonate, ethylene carbonate, propylene carbonate; Examples thereof include lactic acid ester solvents
- hydrocarbon solvents examples include n-pentane, iso-pentane, n-hexane, iso-hexane, n-heptane, iso-heptane, 2,2,4-trimethylpentane, n-octane, iso-octane, cyclohexane , Aliphatic hydrocarbon solvents such as methylcyclohexane; Fragrances such as benzene, toluene, xylene, mesitylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, iso-propylbenzene, diethylbenzene, iso-butylbenzene, triethylbenzene, di-iso-propylbenzene, n-amylnaphthalene Group hydrocarbon solvents and the like.
- the radiation-sensitive composition may contain one or more [B] solvents.
- the radiation-sensitive composition may contain a [C] acid generator.
- the radiation sensitive composition contains the [C] acid generator in the form of a low molecular compound (hereinafter also referred to as “[C] acid generator” as appropriate), or a part of the [A] polymer or the like. Or may be both of these forms.
- Examples of the [C] acid generator include onium salt compounds, N-sulfonyloxyimide compounds, halogen-containing compounds, diazoketone compounds, and the like.
- onium salt compounds examples include sulfonium salts, tetrahydrothiophenium salts, iodonium salts, phosphonium salts, diazonium salts, pyridinium salts, and the like.
- radiation sensitive acid generator examples include compounds described in paragraphs [0160] to [0296] of JP2010-164958A.
- the said radiation sensitive composition contains a radiation sensitive acid generator
- a radiation sensitive acid generator as a minimum of content of a radiation sensitive acid generator, 0.1 mass part is with respect to 100 mass parts of [A] polymers. Preferably, 1 part by mass is more preferable, and 5 parts by mass is more preferable. As an upper limit of the said content, 30 mass parts is preferable, 20 mass parts is more preferable, and 10 mass parts is further more preferable.
- the radiation-sensitive composition can contain one or more [C] acid generators.
- the radiation-sensitive composition may contain, as other optional components, for example, an acid diffusion controller, a fluorine atom-containing polymer, a surfactant, and the like.
- the said radiation sensitive composition may contain 1 type, or 2 or more types of arbitrary components, respectively.
- the said radiation sensitive composition may contain an acid diffusion control body as needed.
- the acid diffusion controller controls the diffusion phenomenon in the film of the acid generated from the [C] acid generator and the like by exposure, and has an effect of suppressing an undesirable chemical reaction in the non-exposed region.
- the storage stability of the radiation-sensitive composition is further improved, and the resolution as a resist is further improved.
- a change in the line width of the pattern due to fluctuations in the holding time from exposure to development processing can be suppressed, and a radiation-sensitive composition excellent in process stability can be obtained.
- the inclusion form of the acid diffusion controller in the radiation-sensitive composition may be in the form of a free compound (hereinafter referred to as “acid diffusion controller” as appropriate) or in a form incorporated as part of a polymer. Both forms may be used.
- Examples of the acid diffusion controller include basic compounds described in [0118] to [0119] of JP2010-164958A, amino compounds described in [0018] to [0033] of WO2011 / 007780, and JP2001-166476A. Examples thereof include compounds having a carbamate group described in [0120] to [0121].
- a photodegradable base that is exposed to light and generates a weak acid upon exposure can also be used.
- the photodegradable base include onium salt compounds that lose acid diffusion controllability by being decomposed by exposure.
- the radiation described in [0123] to [0124] of JP-A-2007-114431 is irradiated.
- Photosensitive basic compounds that lose basicity carboxylic acid onium salts described in [0125] to [0126] of JP-A-2002-122994, and sulfonic acids described in [0127] to [0128] of JP-A-2003-005376 Of alkanesulfonic acid in which the ⁇ -position is not substituted with a fluorine atom.
- the said radiation sensitive composition contains an acid diffusion control agent
- an acid diffusion control agent as a minimum of content of an acid diffusion control agent, 0.1 mass part is preferable with respect to 100 mass parts of [A] polymers, and 0. 5 mass parts is more preferable, and 1 mass part is further more preferable.
- As an upper limit of the said content 20 mass parts is preferable, 10 mass parts is more preferable, and 5 mass parts is further more preferable.
- 1 type (s) or 2 or more types can be used for an acid diffusion control body.
- the fluorine atom-containing polymer is a polymer having a fluorine atom.
- the radiation-sensitive composition contains a fluorine atom-containing polymer
- the distribution tends to be unevenly distributed near the film surface due to the oil-repellent characteristics of the fluorine atom-containing polymer in the film.
- the advancing contact angle between the film and the immersion medium can be controlled within a desired range, and the occurrence of bubble defects can be suppressed.
- the said radiation sensitive composition can form the film
- the fluorine atom-containing polymer for example, a polymer whose solubility in an alkaline developer is increased by the action of an acid (a polymer having an acid-dissociable group), and a polymer whose solubility is increased by the action of an alkaline developer (Polmer having an alkali dissociable group), a polymer that does not react with either acid or alkali (a polymer having neither an acid dissociable group nor an alkali dissociable group), and the like.
- the said radiation sensitive composition contains a fluorine atom containing polymer
- 0.1 mass part is preferable with respect to 100 mass parts of [A] polymers, 0.5 mass part is more preferable, and 1 mass part is further more preferable.
- As an upper limit of the said content 20 mass parts is preferable, 15 mass parts is more preferable, and 10 mass parts is further more preferable.
- Surfactants have the effect of improving coatability, striation, developability, and the like.
- the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol diacrylate.
- Nonionic surfactants such as stearate are listed.
- Examples of commercially available surfactants include KP341 (Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, no.
- the said radiation sensitive composition contains surfactant
- 0.1 mass part is preferable with respect to 100 mass parts of [A] polymers, 0.3 mass Part is more preferred.
- As an upper limit of the said content 2 mass parts is preferable and 1 mass part is more preferable.
- the [A] polymer, the [B] solvent, and optional components as necessary are mixed at a predetermined ratio, and the obtained mixture is preferably a membrane filter having a pore size of about 0.2 ⁇ m. It can prepare by filtering with.
- the lower limit of the solid content concentration of the radiation-sensitive composition is preferably 0.1% by mass, more preferably 0.5% by mass, further preferably 1% by mass, and particularly preferably 1.5% by mass.
- the upper limit of the solid content concentration is preferably 50% by mass, more preferably 30% by mass, further preferably 10% by mass, and particularly preferably 5% by mass.
- the radiation-sensitive composition can be used for alkali development using an aqueous alkali solution as a developer and for organic solvent development using development containing an organic solvent as a developer.
- a step of applying the radiation-sensitive composition (hereinafter also referred to as “coating step”) and a film formed by the coating step are exposed on one surface side of the substrate.
- a step (hereinafter also referred to as “exposure step”) and a step of developing the exposed film (hereinafter also referred to as “development step”).
- exposure step a step of applying the radiation-sensitive composition
- development step a step of developing the exposed film
- the radiation sensitive composition is applied to one side of the substrate.
- a film is formed.
- suitable coating means such as rotation coating, cast coating, and roll coating, are employable.
- the substrate include a silicon wafer and a wafer coated with aluminum.
- the solvent in the coating film is volatilized by pre-baking (PB) as necessary.
- the lower limit of the average film thickness is preferably 1 nm, more preferably 10 nm, still more preferably 20 nm, and particularly preferably 30 nm.
- the upper limit of the average thickness is preferably 1,000 nm, more preferably 200 nm, still more preferably 100 nm, and particularly preferably 70 nm.
- the lower limit of the PB temperature is preferably 60 ° C, more preferably 80 ° C.
- As an upper limit of the temperature of PB 140 degreeC is preferable and 120 degreeC is more preferable.
- the lower limit of the PB time is preferably 5 seconds, and more preferably 10 seconds.
- the upper limit of the PB time is preferably 600 seconds, and more preferably 300 seconds.
- the film formed by the coating step is exposed.
- this exposure is performed by irradiating radiation through a mask having a predetermined pattern through an immersion medium such as water.
- the radiation include visible rays, ultraviolet rays, far ultraviolet rays, vacuum ultraviolet rays (extreme ultraviolet rays (EUV); wavelength 13.5 nm), electromagnetic waves such as X-rays and ⁇ rays, and charged particle beams such as electron rays and ⁇ rays.
- EUV extreme ultraviolet rays
- radiation that cleaves the metal-nonmetal covalent bond of the [A] polymer by exposure is preferable, and EUV and electron beam are more preferable.
- PEB post-exposure baking
- 50 degreeC is preferable and 80 degreeC is more preferable.
- 80 degreeC is preferable and 130 degreeC is more preferable.
- the lower limit of the PEB time is preferably 5 seconds, and more preferably 10 seconds.
- the upper limit of the PEB time is preferably 600 seconds, and more preferably 300 seconds.
- an organic or inorganic antireflection film can be formed on the substrate to be used.
- a protective film can also be provided, for example on a coating film.
- an immersion protective film may be provided on the film, for example, in order to avoid direct contact between the immersion medium and the film.
- the film exposed in the exposure step is developed.
- the developer used for the development include an alkaline aqueous solution and a developer containing an organic solvent.
- alkaline aqueous solution examples include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, Ethyldimethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH), pyrrole, piperidine, choline, 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4. 3.0] -5-nonene, and an alkaline aqueous solution in which at least one alkaline compound is dissolved.
- TMAH tetramethylammonium hydroxide
- the lower limit of the content of the alkaline compound in the alkaline aqueous solution is preferably 0.1% by mass, more preferably 0.5% by mass, and even more preferably 1% by mass.
- 20 mass% is preferable, 10 mass% is more preferable, and 5 mass% is further more preferable.
- TMAH aqueous solution As the alkaline aqueous solution, a TMAH aqueous solution is preferable, and a 2.38 mass% TMAH aqueous solution is more preferable.
- organic solvent in the developer containing the organic solvent examples include the same organic solvents exemplified as the [B] solvent of the radiation-sensitive composition.
- organic solvents exemplified as the [B] solvent of the radiation-sensitive composition.
- the lower limit of the content of the organic solvent in the organic solvent developer is preferably 80% by mass, more preferably 90% by mass, further preferably 95% by mass, and particularly preferably 99% by mass.
- These developers may be used alone or in combination of two or more.
- the substrate is washed with water or the like and dried.
- a positive pattern can be obtained.
- a developer containing an organic solvent is used as the developer, a negative pattern can be obtained.
- Weight average molecular weight (Mw) The weight average molecular weight (Mw) of the polymer was determined using a Tosoh GPC column (G2000HXL: 2, G3000HXL: 1, G4000HXL: 1), flow rate: 1.0 mL / min, elution solvent: tetrahydrofuran, sample concentration: Measurement was performed by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard under the analysis conditions of 1.0 mass%, sample injection amount: 100 ⁇ L, column temperature: 40 ° C., detector: differential refractometer.
- GPC gel permeation chromatography
- Example 8 20 g of the compound represented by the following formula (M-1) was dissolved in 40 g of 2-butanone, and 0.66 g of dimethyl 2,2′-azobis (2-methylpropionate) as a radical polymerization initiator was added. A monomer solution was prepared. A three-necked flask charged with 20 g of 2-butanone was purged with nitrogen for 30 minutes. After purging with nitrogen, the reaction kettle was heated to 80 ° C. with stirring, and the monomer solution prepared above was dropped over 3 hours using a dropping funnel. The polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time. After completion of the polymerization, the polymerization reaction solution was cooled with water to 30 ° C.
- This polymer (A-8) had Mw of 4,500 and Mw / Mn of 1.40.
- Example 18 [A] 3 parts by mass of (A-1) as a polymer is dissolved in 97 parts by mass of (B-1) as a [B] solvent, and the resulting mixture is filtered through a membrane filter having a pore size of 0.20 ⁇ m. As a result, a radiation-sensitive composition (J-1) was prepared.
- PB was performed at 100 ° C. for 60 seconds to form a film having an average thickness of 40 nm.
- this film was exposed and patterned using a vacuum ultraviolet light exposure apparatus (NA: 0.3, dipole illumination).
- NA vacuum ultraviolet light exposure apparatus
- PEB was carried out under conditions of 150 ° C. and 60 seconds, and then developed with a paddle method using 2-heptanone at 23 ° C. for 1 minute, followed by drying to form a negative pattern.
- the prepared radiation sensitive composition is stirred at 23 ° C. for 6 hours, and circulation filtration is performed so that the radiation sensitive composition permeates 25 times at a flow rate of 15 L / hour with an HDPE capsule filter (5 nm in diameter) manufactured by Pall Japan. went.
- the filtered solution was filled in a glass bottle, and the number of particles having a size of 15 nm or more in 1 mL was measured with a particle counter manufactured by Rion.
- the particle suppression was evaluated as “good” when the number of particles was 1 or less, “slightly good” when more than 1 and 10 or less, and “bad” when more than 10 particles.
- the substrate used in the evaluation of the coating property is inspected with a defect inspection apparatus (“2810” of KLA Tencor), and observed for fine defects of a level that cannot be confirmed by visual inspection, and per substrate having a size of 50 nm or more.
- the number of defects was calculated, and the defect suppression was evaluated as “good” when the number was 10 or less, “slightly good” when the number was over 10 and less than 100, and “bad” when the number was over 100. did.
- a line-and-space pattern (1L1S) including a line portion having a line width of 150 nm and a space portion having an interval of 150 nm formed by adjacent line portions is formed in a one-to-one line width.
- the exposure amount was taken as the optimum exposure amount, and this optimum exposure amount was taken as the sensitivity (unit: ⁇ C / cm 2 ).
- Sensitivity if it is 35 ⁇ C / cm 2 or less as "good", exceeding the 35 ⁇ C / cm 2, if it is 50 .mu.C / cm 2 or less as “slightly good", when it exceeds 50 .mu.C / cm 2 "bad” Can be evaluated.
- the radiation-sensitive compositions of the examples have excellent sensitivity, few particles, excellent coating properties, and excellent storage stability. Moreover, according to the radiation sensitive composition of an Example, a pattern with few defects can be formed.
- the radiation-sensitive composition of the present invention is excellent in sensitivity and particle suppression properties, is excellent in coating properties and defect suppression properties, and can maintain these performances for a long time.
- a pattern with few defects can be formed.
- the metal-containing resin of the present invention can be suitably used as a polymer component of the radiation-sensitive composition. According to the method for producing a metal-containing resin of the present invention, the metal-containing resin can be produced easily and with high yield. Therefore, these can be suitably used for manufacturing semiconductor devices that are expected to be further miniaturized in the future.
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Abstract
Description
当該感放射線性組成物は、極端紫外線又は電子線露光に用いられる感放射線性組成物である。当該感放射線性組成物は、[A]重合体と[B]溶媒とを含有する。当該感放射線性組成物は、好適成分として、感放射線性酸発生体(以下、「[C]酸発生体」ともいう)を含有していてもよく、本発明の効果を損なわない範囲において、その他の任意成分を含有していてもよい。以下、各成分について説明する。
[A]重合体は、構造単位(I)を有する重合体(金属含有樹脂)である。「重合体」とは、2以上の構造単位を有し、主鎖を有する鎖状の化合物をいい、クラスター等の構造単位が環状等につながった化合物を含まない。「主鎖」とは[A]重合体が有する原子の鎖のうち最も長いものをいう。「側鎖」とは[A]重合体が有する原子の鎖で主鎖以外のものをいう。
構造単位(I)は、1又は複数の金属原子と、この金属原子に化学結合により結合している炭素原子であって不飽和結合を構成していない炭素原子(以下、「炭素原子(A)」ともいう)とを含み、上記化学結合のうちの少なくとも1つが共有結合である構造単位である。「化学結合」は、共有結合とイオン結合とに分類される。「共有結合」とは、結合する2つの原子のポーリングの電気陰性度の差が1.6以下である化学結合をいう。「イオン結合」とは、結合する2つの原子のポーリングの電気陰性度の差が1.6を超える化学結合をいう。
上記式(1-1)中、R1は、炭素数1~20の1価の有機基である。nは、1~4の整数である。nが2以上の場合、複数のR1は同一でも異なっていてもよい。1又は複数のR1のうちの少なくとも1つは、上記炭素原子(A)でMと結合している。
上記式(1-2)中、L1及びL2は、それぞれ独立して、原子数1~30の2価の連結基である。R2は、炭素数1~20の1価の有機基である。mは、1~4の整数である。mが2以上の場合、複数のR2は同一でも異なっていてもよい。L1、L2及び1又は複数のR2のうちの少なくとも1つは、上記炭素原子(A)でMと結合している。
上記式(1-3)中、RAは、水素原子又は炭素数1~10の1価の有機基である。L3は、原子数1~30の2価の連結基である。R3は、炭素数1~20の1価の有機基である。pは、1~5の整数である。pが2以上の場合、複数のR3は同一でも異なっていてもよい。L3及び1又は複数のR3のうちの少なくとも1つは、上記炭素原子(A)でMと結合している。
メチル基、エチル基、n-プロピル基、i-プロピル基等のアルキル基;
エテニル基、プロペニル基、ブテニル基等のアルケニル基;
エチニル基、プロピニル基、ブチニル基等のアルキニル基などが挙げられる。
シクロペンチル基、シクロヘキシル基、シクロペンチルメチル基、シクロヘキシルメチル基等の単環の脂環式飽和炭化水素基;
シクロペンテニル基、シクロヘキセニル基等の単環の脂環式不飽和炭化水素基;
ノルボルニル基、アダマンチル基、トリシクロデシル基、ノルボルナン-2-イルメチル基、アダマンチルメチル基等の多環の脂環式飽和炭化水素基;
ノルボルネニル基、トリシクロデセニル基等の多環の脂環式不飽和炭化水素基などが挙げられる。
フェニル基、トリル基、キシリル基、ナフチル基、アントリル基等のアリール基;
ベンジル基、フェネチル基、ナフチルメチル基、アントリルメチル基等のアラルキル基などが挙げられる。
mとしては、2~4が好ましく、2及び3がより好ましい。
pとしては、2~5が好ましく、2~4がより好ましく、2及び3がさらに好ましい。
エテニル基、(メタ)アクリル基等のエチレン性二重結合含有基;
エチニル基等のアセチレン性三重結合含有基;
フェニル基、トリル基、ナフチル基、ヒドロキシフェニル基等の芳香族含有基などの炭素-炭素二重結合含有基、
カルボニル基等の炭素-酸素二重結合含有基、
シアノ基等の炭素-窒素三重結合含有基などが挙げられる。これらの中で、炭素-炭素二重結合含有基及び炭素-窒素三重結合含有基が好ましく、エチレン性二重結合含有基、芳香族含有基及び炭素-窒素三重結合含有基がより好ましく、エチレン性二重結合含有基及び芳香族含有基がさらに好ましく、エテニル基及びフェニルが特に好ましい。
フルオロメチル基、トリフルオロメチル基、フルオロフェニル基等のフッ素化炭化水素基;
クロロメチル基、トリクロロメチル基、クロロフェニル基等の塩素化炭化水素基;
ブロモメチル基、トリブロモメチル基、ブロモフェニル基等の臭素化炭化水素基;
ヨードメチル基、トリヨードメチル基、ヨードフェニル基等のヨウ素化炭化水素基などが挙げられる。これらの中で、フッ素化炭化水素基が好ましく、トリフルオロメチル基がより好ましい。
構造単位(II)は、極性基を含む構造単位である(但し、構造単位(I)に該当するものを除く)。[A]重合体は、構造単位(I)に加えて構造単位(II)をさらに有することで、現像液への溶解性をより適度に調整することができ、その結果、当該感放射線性組成物のパーティクル抑制性、塗布性、欠陥抑制性及び保存安定性をより向上させることができる。
構造単位(III)は、架橋性基を含む構造単位である(但し、構造単位(I)に該当するものを除く)。「架橋性基」とは、分子内及び/又は分子間で共有結合を形成することができる基をいう。[A]重合体は、構造単位(I)に加えて構造単位(III)をさらに有することで、硬化により、分子量が適度に大きくなる。その結果、当該感放射線性組成物のパーティクル抑制性、塗布性、欠陥抑制性及び保存安定性をより向上させることができる。
オキシラニル基、オキセタニル基等のエポキシ基;
ビニル基、アリル基、スチリル基、(メタ)アクリロイル基等の重合性炭素-炭素二重結合含有基;
エチニル基、プロパルギル基等の炭素-炭素三重結合含有基などが挙げられる。
構造単位(IV)は、酸解離性基を含む構造単位である。「酸解離性基」とは、カルボキシ基、フェノール性水酸基等の水素原子を置換する基であって、酸の作用により解離する基をいう。[A]重合体は、構造単位(IV)を有することで、現像液への溶解性をより適度に調整することができ、その結果、当該感放射線性組成物のパーティクル抑制性、塗布性、欠陥抑制性及び保存安定性をより向上させることができる。
[A]重合体は、構造単位(I)~(IV)以外のその他の構造単位を有していてもよい。その他の構造単位としては、例えば非解離性の炭化水素基を含む構造単位等が挙げられる。その他の構造単位の含有割合の上限としては、[A]重合体を構成する全構造単位に対して、20モル%が好ましく、10モル%がより好ましい。
[A]重合体は、構造単位(I-1)を有する場合、例えば化合物(I)等を水存在下で加水分解反応させる工程を備える金属含有樹脂の製造方法により、簡便かつ収率よく製造することができる。この場合、塩基触媒又は酸触媒を用いてもよく、また、アルコール等の水以外の溶媒を共存させてもよい。
[B]溶媒は、少なくとも[A]重合体及び所望により含有される任意成分等を溶解又は分散可能な溶媒であれば特に限定されない。[B]溶媒として、[A]重合体を合成する際に用いた溶媒を用いてもよい。
メタノール、エタノール、n-プロパノール、iso-プロパノール、n-ブタノール、iso-ブタノール、sec-ブタノール、tert-ブタノール、n-ペンタノール、iso-ペンタノール等の炭素数1~12のモノアルコール系溶媒;
エチレングリコール、1,2-プロピレングリコール、1,3-ブチレングリコール、2,4-ペンタンジオール、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、トリプロピレングリコール等の炭素数1~10の多価アルコール系溶媒;
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル等の多価アルコール部分エーテル系溶媒等が挙げられる。
ジエチルエーテル、ジプロピルエーテル、ジブチルエーテル等のジアルキルエーテル系溶媒;
テトラヒドロフラン、テトラヒドロピラン等の環状エーテル系溶媒;
ジフェニルエーテル、アニソール等の芳香環含有エーテル系溶媒等が挙げられる。
アセトン、メチルエチルケトン、メチル-n-プロピルケトン、メチル-n-ブチルケトン、ジエチルケトン、メチル-iso-ブチルケトン、2-ヘプタノン、エチル-n-ブチルケトン、メチル-n-ヘキシルケトン、ジ-iso-ブチルケトン、トリメチルノナノン等の鎖状ケトン系溶媒:
シクロペンタノン、シクロヘキサノン、シクロヘプタノン、シクロオクタノン、メチルシクロヘキサノン等の環状ケトン系溶媒:
2,4-ペンタンジオン、アセトニルアセトン、アセトフェノン等が挙げられる。
N,N’-ジメチルイミダゾリジノン、N-メチルピロリドン等の環状アミド系溶媒;
N-メチルホルムアミド、N,N-ジメチルホルムアミド、N,N-ジエチルホルムアミド、アセトアミド、N-メチルアセトアミド、N,N-ジメチルアセトアミド、N-メチルプロピオンアミド等の鎖状アミド系溶媒等が挙げられる。
酢酸メチル、酢酸エチル、酢酸n-プロピル、酢酸iso-プロピル、酢酸n-ブチル、酢酸iso-ブチル、酢酸sec-ブチル等の酢酸エステル系溶媒;
酢酸エチレングリコールモノメチルエーテル、酢酸エチレングリコールモノエチルエーテル、酢酸ジエチレングリコールモノメチルエーテル、酢酸ジエチレングリコールモノエチルエーテル、酢酸プロピレングリコールモノメチルエーテル、酢酸プロピレングリコールモノエチルエーテル、酢酸プロピレングリコールモノプロピルエーテル等の多価アルコール部分エーテルカルボキシレート系溶媒;
γ-ブチロラクトン、δ-バレロラクトン等のラクトン系溶媒;
ジメチルカーボネート、ジエチルカーボネート、エチレンカーボネート、プロピレンカーボネート等のカーボネート系溶媒;
乳酸メチル、乳酸エチル、乳酸n-ブチル、乳酸n-アミル等の乳酸エステル系溶媒などが挙げられる。
n-ペンタン、iso-ペンタン、n-ヘキサン、iso-ヘキサン、n-ヘプタン、iso-ヘプタン、2,2,4-トリメチルペンタン、n-オクタン、iso-オクタン、シクロヘキサン、メチルシクロヘキサン等の脂肪族炭化水素系溶媒;
ベンゼン、トルエン、キシレン、メシチレン、エチルベンゼン、トリメチルベンゼン、メチルエチルベンゼン、n-プロピルベンゼン、iso-プロピルベンゼン、ジエチルベンゼン、iso-ブチルベンゼン、トリエチルベンゼン、ジ-iso-プロピルベンセン、n-アミルナフタレン等の芳香族炭化水素系溶媒等が挙げられる。
当該感放射線性組成物は、[C]酸発生体を含有してもよい。当該感放射線性組成物における[C]酸発生体の含有形態としては、低分子化合物の形態(以下、適宜「[C]酸発生剤」ともいう)でも、[A]重合体等の一部として組み込まれた形態でも、これらの両方の形態でもよい。
当該感放射線性組成物は、上記[A]~[C]成分以外にも、その他の任意成分として、例えば酸拡散制御体、フッ素原子含有重合体、界面活性剤等を含有していてもよい。当該感放射線性組成物は、任意成分をそれぞれ、1種又は2種以上含有していてもよい。
当該感放射線性組成物は、必要に応じて、酸拡散制御体を含有してもよい。酸拡散制御体は、露光により[C]酸発生体等から生じる酸の膜中における拡散現象を制御し、非露光領域における好ましくない化学反応を抑制する効果を奏する。また、感放射線性組成物の貯蔵安定性がより向上すると共に、レジストとしての解像度がより向上する。さらに、露光から現像処理までの引き置き時間の変動によるパターンの線幅変化を抑えることができ、プロセス安定性に優れた感放射線性組成物が得られる。酸拡散制御体の当該感放射線性組成物における含有形態としては、遊離の化合物(以下、適宜「酸拡散制御剤」と称する)の形態でも、重合体の一部として組み込まれた形態でも、これらの両方の形態でもよい。
フッ素原子含有重合体は、フッ素原子を有する重合体である。当該感放射線性組成物がフッ素原子含有重合体を含有すると、膜を形成した際に、膜中のフッ素原子含有重合体の撥油性的特徴により、その分布が膜表面近傍に偏在化する傾向があり、液浸露光等の際における感放射線性酸発生体、酸拡散制御体等が液浸媒体に溶出することを抑制することができる。また、このフッ素原子含有重合体の撥水性的特徴により、膜と液浸媒体との前進接触角を所望の範囲に制御でき、バブル欠陥の発生を抑制することができる。さらに、膜と液浸媒体との後退接触角が高くなり、水滴が残らずに高速でのスキャン露光が可能となる。このように、当該感放射線性組成物は、フッ素原子含有重合体を含有することで、液浸露光法に好適な膜を形成することができる。
界面活性剤は、塗工性、ストリエーション、現像性等を改良する効果を奏する。界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル、ポリオキシエチレンn-オクチルフェニルエーテル、ポリオキシエチレンn-ノニルフェニルエーテル、ポリエチレングリコールジラウレート、ポリエチレングリコールジステアレート等のノニオン系界面活性剤などが挙げられる。界面活性剤の市販品としては、KP341(信越化学工業社)、ポリフローNo.75、同No.95(以上、共栄社化学社)、エフトップEF301、同EF303、同EF352(以上、トーケムプロダクツ社)、メガファックF171、同F173(以上、DIC社)、フロラードFC430、同FC431(以上、住友スリーエム社)、アサヒガードAG710、サーフロンS-382、同SC-101、同SC-102、同SC-103、同SC-104、同SC-105、同SC-106(以上、旭硝子社)等が挙げられる。
当該感放射線性組成物は、例えば[A]重合体、[B]溶媒及び必要に応じて任意成分を所定の割合で混合し、好ましくは、得られた混合物を孔径0.2μm程度のメンブレンフィルターで濾過することにより調製することができる。当該感放射線性組成物の固形分濃度の下限としては、0.1質量%が好ましく、0.5質量%がより好ましく、1質量%がさらに好ましく、1.5質量%が特に好ましい。上記固形分濃度の上限としては、50質量%が好ましく、30質量%がより好ましく、10質量%がさらに好ましく、5質量%が特に好ましい。
当該パターン形成方法は、基板の一方の面側に、当該感放射線性組成物を塗工する工程(以下、「塗工工程」ともいう)と、上記塗工工程により形成された膜を露光する工程(以下、「露光工程」ともいう)と、上記露光された膜を現像する工程(以下、「現像工程」ともいう)とを備える。当該パターン形成方法によれば、上述の当該感放射線性組成物を用いているので、欠陥の少ないパターンを形成することができる。以下、各工程について説明する。
本工程では、基板の一方の面側に、当該感放射線性組成物を塗工する。これにより、膜を形成する。塗工方法としては特に限定されないが、例えば回転塗工、流延塗工、ロール塗工等の適宜の塗工手段を採用することができる。基板としては、例えばシリコンウエハ、アルミニウムで被覆されたウエハ等が挙げられる。具体的には、得られる膜が所定の厚さになるように感放射線性組成物を塗工した後、必要に応じてプレベーク(PB)することで塗膜中の溶媒を揮発させる。
本工程では、上記塗工工程により形成された膜を露光する。この露光は、場合によっては、水等の液浸媒体を介し、所定のパターンを有するマスクを介して放射線を照射することにより行う。上記放射線としては、例えば可視光線、紫外線、遠紫外線、真空紫外線(極端紫外線(EUV);波長13.5nm)、X線、γ線等の電磁波;電子線、α線等の荷電粒子線などが挙げられる。これらの中で、露光により[A]重合体が有する金属-非金属間の共有結合を開裂させる放射線が好ましく、EUV及び電子線がより好ましい。
本工程では、上記露光工程で露光された膜を現像する。この現像に用いる現像液としては、アルカリ水溶液、有機溶媒を含む現像液等が挙げられる。
重合体の重量平均分子量(Mw)は、東ソー製GPCカラム(G2000HXL:2本、G3000HXL:1本、G4000HXL:1本)を用い、流量:1.0mL/分、溶出溶媒:テトラヒドロフラン、試料濃度:1.0質量%、試料注入量:100μL、カラム温度:40℃、検出器:示差屈折計の分析条件で、単分散ポリスチレンを標準とするゲルパーミエーションクロマトグラフィ(GPC)により測定した。
[実施例1]
3.04gのジブチルスズジクロリドを30gのプロピレングリコールモノエチルエーテルに溶解し、0.36gの水を添加し、40℃で6時間攪拌して加水分解することにより、下記式(A-1)で表される重合体を得た。この重合体(A-1)は、Mwが1,200であった。
単量体を適宜選択し、実施例1と同様にして、下記式(A-2)~(A-5)、(A-16)及び(A-17)で表される重合体を得た。
下記式(M-1)で表される化合物20gを2-ブタノン40gに溶解し、さらにラジカル重合開始剤としてのジメチル2,2’-アゾビス(2-メチルプロピオネート)0.66gを投入した単量体溶液を調製した。また、20gの2-ブタノンを投入した三口フラスコを30分窒素パージした。窒素パージの後、反応釜を攪拌しながら80℃に加熱し、上記調製した単量体溶液を、滴下漏斗を用いて3時間かけて滴下した。滴下開始を重合開始時間とし、重合反応を6時間実施した。重合終了後、重合反応液を水冷することにより30℃以下に冷却し、400gのメタノールへ投入し、析出した白色粉末を濾別した。濾別された白色粉末を2回、100gずつのメタノールにてスラリー状にして洗浄した後、濾別し、50℃にて17時間乾燥し、白色粉末である下記式(A-8)で表される重合体を良好な収率で得た。この重合体(A-8)はMwが4,500、Mw/Mnが1.40であった。
単量体を適宜選択し、実施例8と同様にして、下記式(A-6)、(A-7)及び(A-9)~(A-15)で表される重合体を得た。
感放射線性組成物の調製に用いた[A]重合体、[B]溶媒及び[C]酸発生剤を以下に示す。
実施例18~34:上記合成した重合体(A-1)~(A-17)
比較例1~3:下記式(a-1)~(a-3)で表される化合物
B-1:プロピレングリコールモノメチルエーテルアセテート
C-1:トリフェニルスルホニウム10-カンファースルホネート(下記式(C-1)で表される化合物)
[A]重合体としての(A-1)3質量部を、[B]溶媒としての(B-1)97質量部に溶解させ、得られた混合物を、孔径0.20μmのメンブレンフィルターで濾過することにより、感放射線性組成物(J-1)を調製した。
下記表1に記載の種類及び量の各成分を用いた以外は、実施例1と同様にして、感放射線性組成物(J-2)~(J-17)及び(CJ-1)~(CJ-3)を調製した。表1中の「-」は該当する成分を使用しなかったことを示す。
特表2016-530565の実施例1に記載の方法によりレジスト前駆体溶液を調製し、感放射線性組成物(CJ-4)とした。下記表1の比較例4における「*1」は、感放射線性組成物(CJ-4)を上記方法により調製したことを示す。
特表2016-530565の実施例5に記載の方法によりジビニルスズ水酸化物溶液を調製し、感放射線性組成物(CJ-5)とした。下記表1の比較例5における「*1」は、感放射線性組成物(CJ-5)を上記方法により調製したことを示す。
シリコンウエハ上に、上記調製した感放射線性組成物をスピンコートした後、100℃、60秒の条件でPBを行い、平均厚み40nmの膜を形成した。次に、この膜を、真空紫外光露光装置(NA:0.3、ダイポール照明)を用いて露光し、パターニングを行った。その後、150℃、60秒の条件でPEBを行い、次いで、2-ヘプタノンを用い、23℃で1分間、パドル法により現像した後、乾燥して、ネガ型パターンを形成した。
下記項目について、上記調製した感放射線性組成物又は上記形成したパターンについて下記測定を行うことにより評価を行った。評価結果を下記表1に合わせて示す。
上記調製した感放射線性組成物を、23℃で6時間撹拌し、日本ポール社のHDPEカプセルフィルター(口径5nm)で、流速15L/時で感放射線性組成物が25回透過するよう循環濾過を行った。濾過した液をガラス瓶に充填し、その液をリオン社のパーティクルカウンターで、15nm以上の大きさのパーティクルの1mL中の数を測定した。パーティクル抑制性は、パーティクル数が1個以下の場合は「良好」と、1個を超え10個以下の場合は「やや良好」と、10個を超える場合は「不良」と評価した。
塗工現像装置(東京エレクトロン社の「クリーントラックACT12」)を用いて、12インチシリコンウエハ上に、上記調製した感放射線性組成物を平均膜みが30nmになるよう所定の回転数で塗工した後、100℃で30秒間ベークした。塗工した基板を目視にて塗布ムラ、はじき及びハレーションの有無を観察し、これらが認められなければ「良好」と、これらが認められた場合は「不良」と評価した。
上記塗工性の評価で用いた基板を、欠陥検査装置(KLA Tencor社の「2810」で検査し、目視では確認できないレベルの微細な欠陥について観察し、50nm以上の大きさの1基板あたりの欠陥の個数を算出した。欠陥抑制性は、10個以下の場合は「良好」と、10個を超え100個以下の場合は「やや良好」と、100個を超える場合は「不良」と評価した。
(5℃、6か月)
上記調製した感放射線性組成物を、窒素雰囲気下でガラス瓶に充填、密封し、暗室中、5℃で保存した。6か月後に上記塗工性及び欠陥抑制性について評価し、問題が認められなければ「問題なし」と、問題があった場合はその項目について評価結果に記載した。
(35℃、1か月)
上記調製した感放射線性組成物を、窒素雰囲気下でガラス瓶に充填、密封し、暗室中、35℃で保存した。1か月後に上記塗工性及び欠陥抑制性について評価し、問題が認められなければ「問題なし」と、問題があった場合はその項目について評価結果に記載した。
真空紫外線によるパターニングで、線幅150nmのライン部と、隣り合うライン部によって形成される間隔が150nmのスペース部とからなるライン・アンド・スペースパターン(1L1S)を1対1の線幅に形成する露光量を最適露光量とし、この最適露光量を感度(単位:μC/cm2)とした。感度は、35μC/cm2以下である場合は「良好」と、35μC/cm2を超え、50μC/cm2以下である場合は「やや良好」と、50μC/cm2を超える場合は「不良」と評価できる。
Claims (23)
- 極端紫外線又は電子線露光に用いられ、第1重合体と溶媒とを含有する感放射線性組成物であって、
上記第1重合体が、1又は複数の金属原子と、この金属原子に化学結合により結合している炭素原子であって不飽和結合を構成していない炭素原子とを含む第1構造単位を有し、上記化学結合のうちの少なくとも1つが共有結合であることを特徴とする感放射線性組成物。 - 上記化学結合の全てが共有結合である請求項1に記載の感放射線性組成物。
- 上記金属原子が、スズ、ゲルマニウム、鉛又はこれらの組み合わせである請求項1又は請求項2に記載の感放射線性組成物。
- 上記第1構造単位が、下記式(1)で表される化合物の加水分解物、下記式(1)で表される化合物の加水分解縮合物又はこれらの組み合わせに由来する請求項3に記載の感放射線性組成物。
(式(1)中、Mは、スズ、ゲルマニウム又は鉛である。Lは、単結合又は連結基である。Rは、不飽和結合を有する基又はハロゲン化炭化水素基である。aは、1~3の整数である。aが2以上の場合、複数のRは同一でも異なっていてもよく、複数のLは同一でも異なっていてもよい。Xは、ハロゲン原子、アルコキシ基及びカルボキシレート基から選ばれる加水分解性基又は架橋性基である。bは、1~5の整数である。bが2以上の場合、複数のXは同一でも異なっていてもよい。) - 上記式(1)のLが連結基であり、この連結基が炭素数1~5のアルカンジイル基である請求項4に記載の感放射線性組成物。
- 上記式(1)のRの不飽和結合を有する基中の不飽和結合を構成する炭素原子又はRのハロゲン化炭化水素基中のハロゲン原子が結合する炭素原子が、Lと直接結合している請求項4又は請求項5に記載の感放射線性組成物。
- 上記式(1)のRの不飽和結合を有する基が、芳香族含有基又はエチレン性二重結合含有基である請求項4、請求項5又は請求項6に記載の感放射線性組成物。
- 上記式(1)のR中の不飽和結合が、エチレン性二重結合である請求項4から請求項7のいずれか1項に記載の感放射線性組成物。
- 上記第1重合体の含有量が、固形分換算で50質量%以上である請求項1から請求項8のいずれか1項に記載の感放射線性組成物。
- 上記溶媒が、アルコール系溶媒、エーテル系溶媒、ケトン系溶媒、アミド系溶媒、エステル系溶媒、炭化水素系溶媒又はこれらの組み合わせを含む請求項1から請求項9のいずれか1項に記載の感放射線性組成物。
- 上記溶媒がエステル系溶媒を含み、このエステル系溶媒が多価アルコール部分エーテルカルボキシレート系溶媒を含む請求項10に記載の感放射線性組成物。
- 上記第1重合体が、極性基を含む第2構造単位をさらに有する請求項1から請求項11のいずれか1項に記載の感放射線性組成物。
- 上記第1重合体が、第1構造単位以外の構造単位であって架橋性基を含む第3構造単位をさらに有する請求項1から請求項12のいずれか1項に記載の感放射線性組成物。
- 上記第1重合体が、上記金属原子を主鎖中又は側鎖中に有する請求項1から請求項13のいずれか1項に記載の感放射線性組成物。
- 上記第1重合体以外のフッ素原子含有重合体をさらに含有する請求項1から請求項14のいずれか1項に記載の感放射線性組成物。
- 界面活性剤をさらに含有する請求項1から請求項15のいずれか1項に記載の感放射線性組成物。
- 基板の一方の面側に、請求項1から請求項16のいずれか1項に記載の感放射線性組成物を塗工する工程と、
上記塗工工程により形成された膜を露光する工程と、
上記露光された膜を現像する工程と
を備えるパターン形成方法。 - 上記現像工程で用いる現像液がアルカリ水溶液である請求項17に記載のパターン形成方法。
- 上記現像工程で用いる現像液が有機溶媒を含む請求項17に記載のパターン形成方法。
- 上記有機溶媒が、エステル系溶媒、エーテル系溶媒、アルコール系溶媒、ケトン系溶媒、アミド系溶媒、炭化水素系溶媒又はこれらの組み合わせを含む請求項19に記載のパターン形成方法。
- 上記露光する工程で用いられる放射線が極端紫外線又は電子線である請求項17から請求項20のいずれか1項に記載のパターン形成方法。
- 1又は複数の金属原子と、この金属原子に化学結合により結合している炭素原子であって不飽和結合を構成していない炭素原子とを含む構造単位を有し、上記化学結合のうちの少なくとも1つが共有結合である金属含有樹脂。
- 請求項22に記載の金属含有樹脂の製造方法であって、
重合体の主鎖をラジカル、アニオン又はカチオンによる連鎖重合で形成する工程
を備えることを特徴とする金属含有樹脂の製造方法。
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Also Published As
| Publication number | Publication date |
|---|---|
| US11079676B2 (en) | 2021-08-03 |
| KR20190099428A (ko) | 2019-08-27 |
| EP3564751A4 (en) | 2020-10-14 |
| JPWO2018123388A1 (ja) | 2019-10-31 |
| TW201831570A (zh) | 2018-09-01 |
| US20190310552A1 (en) | 2019-10-10 |
| EP3564751A1 (en) | 2019-11-06 |
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