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WO2018196089A1 - Élément chauffant miniature et son procédé de traitement - Google Patents

Élément chauffant miniature et son procédé de traitement Download PDF

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Publication number
WO2018196089A1
WO2018196089A1 PCT/CN2017/086296 CN2017086296W WO2018196089A1 WO 2018196089 A1 WO2018196089 A1 WO 2018196089A1 CN 2017086296 W CN2017086296 W CN 2017086296W WO 2018196089 A1 WO2018196089 A1 WO 2018196089A1
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WO
WIPO (PCT)
Prior art keywords
substrate
micro
hole
heater according
heat insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/086296
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English (en)
Chinese (zh)
Inventor
罗彪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GD Midea Air Conditioning Equipment Co Ltd
Original Assignee
GD Midea Air Conditioning Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201720440049.8U external-priority patent/CN206735793U/zh
Priority claimed from CN201710272621.9A external-priority patent/CN107089638A/zh
Priority claimed from CN201710272620.4A external-priority patent/CN106976837B/zh
Application filed by GD Midea Air Conditioning Equipment Co Ltd filed Critical GD Midea Air Conditioning Equipment Co Ltd
Publication of WO2018196089A1 publication Critical patent/WO2018196089A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems

Definitions

  • the invention relates to the technical field of MEMS, and in particular to a micro heater and a processing method thereof.
  • the structure of the surface type micro-heater mainly has a closed film structure and a cantilever beam structure, and the power consumption of the cantilever beam structure is lower than that of the closed film structure, and the cantilever beam structure is caused by the thermal stress release problem of the composite film.
  • the device undulates in the horizontal plane, and as the reaction temperature of the device increases, the composite film will be thermally expanded, which will increase the local accumulation of thermal stress in the cantilever beam structure.
  • the mechanical properties of the closed film are better, the mechanical properties of the suspension film are worse, but the compatibility with the CMOS process is better.
  • Most sensors use this design because of the better mechanical strength of the closure film and the subsequent coating of sensitive materials and subsequent sensor life.
  • the present application is based on the discovery and recognition of the following facts and problems by the inventors: the inventors discovered through research that the surface type micro-heater with a closed membrane structure is damaged by the internal device during long-term work. Caused by fatigue fracture. Through further research and exploration by the inventors, it is found that the cause of fatigue fracture of the device is that the gas pressure change in the cavity of the surface-type micro-heating of the closed film structure causes the support film to be affected by the thermal stress and the pressure difference. The periodic/long-term pressure difference caused, so that the support film is prone to fatigue fracture under the action of periodic/long-term pressure difference.
  • the present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a micro-heater which is simple in structure, long in service life, and high in reliability.
  • the present invention also proposes a method of processing the above micro heater.
  • a micro-heater comprising: a substrate having a first surface and a second surface disposed opposite to each other in a thickness direction thereof, the substrate being provided with a thickness direction extending therethrough a heat insulating through hole, and the substrate is provided with a ventilation structure connecting the heat insulating through hole and the outside; a supporting film, the supporting film is disposed on the first surface of the substrate and is covered a first end of the heat insulating through hole; a heating member disposed on a surface of the supporting film away from the heat insulating through hole; a package shell, wherein the package shell is disposed on the substrate And sealing the second end of the heat insulating through hole on the second surface.
  • a micro-heater by providing a ventilation structure that communicates a heat-insulating through hole and an outside on a substrate, thereby defining a cavity defined by the heat-insulating through hole, the support film, and the package case when the micro-heater operates
  • the room is connected to the outside world. Prevents the problem of damage to the device due to the pressure difference existing inside and outside the chamber.
  • the second surface of the substrate is provided with a groove, and the ventilation structure is defined between the groove and the package.
  • the grooves are plural and disposed along a circumferential interval of the heat insulating through holes.
  • the groove has a curved or U-shaped cross section.
  • an end of the heat insulating through hole at the first surface is formed in a circular shape.
  • a cross-sectional area of the heat insulating through hole increases in a direction from the first surface to the second surface.
  • the heat insulating through hole is formed in a truncated cone shape.
  • the heating element is a heating resistance wire, and the change in curvature of the heating resistance wire in its extending direction is continuous.
  • the projection of the heating resistance wire on the support film is a round, elliptical, involute or rounded polygon at the vertex.
  • the heating resistor wire comprises a plurality of straight segments arranged parallel to each other and spaced apart, and a curved segment connecting adjacent two straight segments, the curved portion and the straight segment connecting smoothly.
  • a method of processing a micro-heater includes the steps of: S10, depositing the support film on the first surface of the substrate; S20, laying on the support film a heating member; S30, etching the substrate from the second surface of the substrate along a thickness direction thereof to form the heat insulating through hole, etching on the second surface of the substrate The substrate to form the recess; S40, connecting the package to the substrate with an adhesive to encapsulate an internal device of the micro-heater.
  • the processing process is simple, easy to operate, and high in molding quality.
  • the step of etching the insulating via and the recess is as follows: first using the dry etching technique by the first The two surfaces etch the substrate along a thickness direction thereof to form a first portion of the insulating via, and etching the substrate on the second surface of the substrate by the above dry etching technique Forming a first portion of the recess; further etching the substrate along a thickness direction of the substrate to form the thermal insulation on a first portion of the thermally insulated through hole by a wet etching technique The via hole continues to etch the substrate to form the recess on the basis of the first portion of the recess using the wet etching technique described above.
  • the dry etching technique is deep reactive ion etching.
  • the etchant of the wet etching technique is a mixture of polyethylene glycol octyl phenyl ether and tetramethyl ammonium hydroxide. Mix solution.
  • the support film is a composite film structure composed of a silicon oxide layer and a silicon nitride layer, and in the step S10, depositing a formation on the first surface of the substrate
  • the step of supporting the film is as follows: a silicon oxide layer is deposited on the first surface of the substrate by a low pressure chemical vapor deposition (LPCVD) method; and then a plasma enhanced chemical vapor deposition (PECVD) method is applied to the silicon oxide layer. A silicon nitride layer is deposited.
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • FIG. 1 is a partial perspective structural view of a micro-heater according to an embodiment of the present invention.
  • FIG. 2 is a partial perspective structural view of another angle of a micro-heater according to an embodiment of the present invention.
  • Substrate 1 first surface 11, second surface 12, thermal insulation through hole 13, first segment 131, second segment 132, aeration structure 14,
  • Heating element 3 straight section 31, curved section 32,
  • connection In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.
  • a micro heater according to an embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
  • a micro-heater As shown in FIGS. 1 and 2, a micro-heater according to an embodiment of the first aspect of the present invention includes a substrate 1, a support film 2, a heating member 3, and a package case (not shown).
  • the above micro heater may be a face type micro heater, and the above micro heater may be applied to the field of sensors.
  • the substrate 1 has a first surface 11 and a second surface 12 which are disposed opposite each other in the thickness direction thereof, and when the substrate 1 is placed in the horizontal direction, the first surface 11 and the second surface 12 are on the substrate 1 Surface and lower surface.
  • the substrate 1 is provided with a heat insulating through hole 13 penetrating therethrough in the thickness direction, and the substrate 1 is provided with a ventilation structure 14 that communicates the heat insulating through hole 13 and the outside.
  • the substrate 1 may be a silicon substrate.
  • the support film 2 is disposed on the first surface 11 of the substrate 1 and covers the first end of the heat insulating through hole 13.
  • the middle portion of the support film 2 covers the first end of the heat insulating through hole 13, and the support film 2 is adjacent thereto.
  • a portion of the peripheral edge is supported on the substrate 1 and connected to the substrate 1.
  • the support film 2 may be a silicon oxide film, a silicon nitride film, or a silicon oxide/silicon nitride composite film.
  • the heating member 3 is provided on a surface of the support film 2 away from the heat insulating through hole 13, and the heating member 3 is supported by the support film 2 and the heating member 3 is spaced apart from the heat insulating through hole 13.
  • the heating member 3 may be in the form of a filament, a sheet or the like.
  • the substrate 1 is further provided with an electrode 4 connected to the heating member 3, and the electrode 4 can be disposed adjacent to the outer periphery of the substrate 1. For example, when the substrate 1 is square, the electrodes 4 may be provided at the four corners of the substrate 1.
  • the package is disposed on the second surface 12 of the substrate 1 and covers the second end of the heat insulating through hole 13.
  • the second end and the first end of the heat insulating through hole 13 are respectively covered by the package shell and the support film 2,
  • the package, the support film 2 and the heat insulating through hole 13 are mutually defined to define a chamber.
  • the heating member 3 works to generate heat, and the supporting film 2 separates the heating member 3 from the heat insulating through hole 13, and at this time, the two surfaces of the supporting film 2 are different.
  • the pressure, one of the two surfaces of the support film 2 faces the heating member 3 and the other surface faces the chamber, so that the support film 2 is subjected to a heat-induced pressure difference in addition to its own thermal stress.
  • the chamber can be communicated with the outside through the ventilation structure 14, whereby the gas pressure in the chamber and the gas pressure outside thereof can be reduced when the micro heater is operated.
  • the pressure difference causes the gas pressure in the chamber to converge with the pressure of the gas outside thereof, so that the pressure difference of the support film 2 can be reduced, so that the pressure on both sides of the support film 2 tends to be uniform, thereby preventing the support film. 2
  • the fatigue damage caused by the periodic/long-term pressure difference prolongs the service life of the micro heater. Improve the reliability of micro heater operation.
  • the micro-heater according to the embodiment of the present invention is provided with a ventilation structure 14 that communicates the heat-insulating through-hole 13 and the outside on the substrate 1, whereby the micro-heater operates, the heat-insulating through-hole 13, the support film 2, and
  • the chamber defined by the encapsulating case communicates with the outside to prevent the device from being easily damaged due to a pressure difference existing inside and outside the chamber.
  • the second surface 12 of the substrate 1 is provided with a groove which is extendable in the radial direction and penetrates the inner wall of the heat insulating through hole 13 and the substrate 1.
  • the peripheral wall defines a venting structure 14 between the recess and the encapsulating shell.
  • the grooves may be plural and disposed along the circumferential interval of the heat insulating through holes 13.
  • the gas in the chamber and the gas outside it can be quickly and uniformly circulated, so that the gas pressure in the chamber tends to be more uniform with the pressure of the outside air, and the gas pressure of each part in the chamber can be made.
  • the plurality of grooves may be arranged in a radial shape, thereby shortening the flow path of the gas and increasing the flow area of the gas, so that the pressure on both sides of the support film 2 tends to be uniform, which is more remarkable. The pressure difference experienced by the support film 2 is reduced.
  • the cross section of the groove may be curved or U-shaped.
  • the structure of the groove is simple and easy to be formed, and the inner wall surface of the groove is smoothed to avoid the generation of stress, thereby further improving the reliability of the micro heater.
  • the end of the insulating through-hole 13 at the first surface 11 is formed in a circular shape such that the cover of the support film 2 insulates the portion of the through-hole 13 It is also circular, that is, the portion of the support film 2 that is suspended is circular, so that the portion of the support film 2 that is in a suspended state is smooth and continuous, and the appearance of the lobes is avoided, so that the support film 2 can be prevented.
  • the stress concentration problem further improves the life of the support film 2 and the reliability of the operation of the micro heater.
  • the support film 2 as a whole may have a circular shape or a square shape.
  • the cross-sectional area of the heat insulating through hole 13 is increased in the direction from the first surface 11 to the second surface 12 (refer to the upward and downward directions in FIG. 2).
  • the overall structural stability and strength of the micro-heater can be improved, and the chip density of the micro-heater can be increased.
  • the heat insulating through holes 13 may be formed in a truncated cone shape.
  • the heat insulating through hole 13 may include a first segment 131 and a second segment 132 having different inner diameters, and the first segment 131 and the second segment 132 are each formed into a cylindrical shape, wherein the first segment 131 is adjacent to the partition.
  • the first surface 11 of the thermal via 13 and the second segment 132 are adjacent to the second surface 12 of the insulating via 13 and the inner diameter of the first segment 131 is smaller than the inner diameter of the second segment 132.
  • the heating member 3 may be a heating resistance wire whose curvature change in the direction in which the resistance wire extends is continuous. Thereby, between the various parts of the heating resistor wire The smooth connection transition can prevent the problem of structural stress concentration on the heating member 3, further improving the reliability of the micro heater.
  • the projection of the heating resistor wire on the support film 2 may be a circular, elliptical, involute or rounded polygon at the apex.
  • the heating resistor wire may include a plurality of straight segments 31 arranged parallel to each other and spaced apart, and a curved segment 32 connecting adjacent two straight segments 31, the smooth transition of the junction of the curved segments 32 and the straight segments 31.
  • the heating resistor wire can be evenly distributed on the support film 2, so that the micro-heater can obtain a large-area and high-quality uniform temperature region during operation.
  • FIGS. 1 and 2 A method of processing a micro-heater according to an embodiment of the second aspect of the present invention will now be described with reference to FIGS. 1 and 2.
  • the support film 2 described above may be deposited on the first surface 11 of the substrate 1 by chemical vapor deposition techniques, and the support film 2 may be a composite film structure.
  • a silicon oxide/silicon nitride composite film may be deposited on the first surface 11 of the substrate 1 using a low pressure chemical vapor deposition technique or a plasma enhanced chemical vapor deposition technique.
  • the first surface 11 and the second surface 12 of the substrate 1 may be polished, whereby the connection strength and reliability between the support film 2 and the substrate 1 can be enhanced. .
  • the support film 2 is a composite film structure composed of a silicon oxide layer and a silicon nitride layer.
  • the step of depositing the support film 2 on the first surface 11 of the substrate 1 is as follows: Depositing a silicon oxide layer on the first surface 11 of the substrate 1 by a low pressure chemical vapor deposition (LPCVD) method; then depositing a silicon nitride layer on the silicon oxide layer by plasma enhanced chemical vapor deposition (PECVD) A low stress composite film structure is formed.
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the heating member 3 is disposed on the support film 2, and the heating member 3 may be deposited on the support film 2 by a sputtering process.
  • a magnetron sputtering method may be employed.
  • the heating element 3 is sputter-deposited on the support film 2 according to design requirements, and the heating element 3 may have a circular shape, an elliptical shape, an involute shape, a rounded polygon at the vertex or a serpentine shape. .
  • the substrate 1 is etched to form a groove.
  • the etching of the insulating via 13 and the recess may be performed simultaneously or sequentially (for example, the insulating via 13 may be etched first, and then the recess may be etched). Of course, simultaneous etching of the insulating via 13 and the recess can improve processing efficiency.
  • the processing process is simple, easy to operate, and high in molding quality.
  • the steps of etching the heat insulating through holes 13 and the grooves are as follows:
  • the substrate 1 is etched from the second surface 12 of the substrate 1 in the thickness direction thereof by a dry etching technique to form a first portion of the insulating via 13 by using the above dry etching technique in the second of the substrate 1.
  • the substrate 1 is etched on the surface 12 to form a first portion of the recess.
  • the wet etching technique is used to continue etching the substrate 1 along the thickness direction of the substrate 1 to form the heat insulating through holes 13 on the basis of the first portion of the heat insulating through holes 13, and the wet etching technique is used in the grooves.
  • the substrate 1 continues to be etched based on the first portion to form a recess.
  • the combination of the dry etching technique and the wet etching technique can reduce the processing cost of the micro heater and ensure the molding quality.
  • the dry etching is performed by dry etching and then wet etching, thereby avoiding possible damage of the support film 2 by dry etching; dry etching is used when etching the groove
  • the technique combined with wet etching can increase the depth of the groove and prevent the above-mentioned chamber of the micro-heater after packaging from forming a closed cavity.
  • the above dry etching technique may be deep reactive ion etching.
  • the etchant of the above wet etching technique may be a mixed solution of polyethylene glycol octyl phenyl ether and tetramethylammonium hydroxide.
  • the etching agent of the wet etching technique adopts the above mixed solution, which can eliminate the acute-angle stress concentration structure generated by the silicon anisotropy, and is advantageous for eliminating the formation of the boss on the groove. Corrosion problem.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Resistance Heating (AREA)

Abstract

L'invention concerne un élément chauffant miniature et son procédé de traitement, l'élément chauffant miniature comprenant : un substrat (1), une membrane de support (2), un élément de chauffe (3) et une enceinte, le substrat (1) étant pourvu d'une première surface (11) et d'une seconde surface (12) qui sont disposées à l'opposé l'une de l'autre dans la direction de son épaisseur ; le substrat (1) étant pourvu d'un trou traversant d'isolation thermique (13) le pénétrant dans la direction de l'épaisseur ; une structure d'aération (14) reliant le trou traversant d'isolation thermique (13) et l'extérieur étant disposée sur le substrat (1) ; la membrane de support (2) étant disposée sur la première surface (11) du substrat (1) et recouvrant une première extrémité du trou traversant d'isolation thermique (13) ; l'élément de chauffe (3) étant disposé sur une surface, éloigné du trou traversant d'isolation thermique (13), de la membrane de support (2) ; et l'enceinte étant disposée sur la seconde surface (12) du substrat (1) et recouvrant une seconde extrémité du trou traversant d'isolation thermique (13).
PCT/CN2017/086296 2017-04-24 2017-05-27 Élément chauffant miniature et son procédé de traitement Ceased WO2018196089A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CN201720440049.8U CN206735793U (zh) 2017-04-24 2017-04-24 微型加热器
CN201710272621.9A CN107089638A (zh) 2017-04-24 2017-04-24 微型加热器及其加工方法
CN201710272620.4 2017-04-24
CN201720440049.8 2017-04-24
CN201710272620.4A CN106976837B (zh) 2017-04-24 2017-04-24 微型加热器及其加工方法
CN201710272621.9 2017-04-24

Publications (1)

Publication Number Publication Date
WO2018196089A1 true WO2018196089A1 (fr) 2018-11-01

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PCT/CN2017/086296 Ceased WO2018196089A1 (fr) 2017-04-24 2017-05-27 Élément chauffant miniature et son procédé de traitement

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Country Link
WO (1) WO2018196089A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310553A (ja) * 1999-04-27 2000-11-07 Yazaki Corp フローセンサ
CN101057309A (zh) * 2004-09-13 2007-10-17 代夫特工业大学 用于透射电子显微镜和加热元件的微反应器及其制造方法
CN101665231A (zh) * 2009-09-18 2010-03-10 上海芯敏微系统技术有限公司 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法
CN103035833A (zh) * 2011-09-30 2013-04-10 中国科学院上海微系统与信息技术研究所 一种平面型半导体热电芯片及制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310553A (ja) * 1999-04-27 2000-11-07 Yazaki Corp フローセンサ
CN101057309A (zh) * 2004-09-13 2007-10-17 代夫特工业大学 用于透射电子显微镜和加热元件的微反应器及其制造方法
CN101665231A (zh) * 2009-09-18 2010-03-10 上海芯敏微系统技术有限公司 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法
CN103035833A (zh) * 2011-09-30 2013-04-10 中国科学院上海微系统与信息技术研究所 一种平面型半导体热电芯片及制备方法

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