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WO2018194975A8 - Optical objective for operation in euv spectral region - Google Patents

Optical objective for operation in euv spectral region Download PDF

Info

Publication number
WO2018194975A8
WO2018194975A8 PCT/US2018/027785 US2018027785W WO2018194975A8 WO 2018194975 A8 WO2018194975 A8 WO 2018194975A8 US 2018027785 W US2018027785 W US 2018027785W WO 2018194975 A8 WO2018194975 A8 WO 2018194975A8
Authority
WO
WIPO (PCT)
Prior art keywords
spectral region
optical objective
reflector
euv spectral
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2018/027785
Other languages
French (fr)
Other versions
WO2018194975A2 (en
WO2018194975A3 (en
Inventor
Daniel Gene Smith
David M. Williamson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/599,148 external-priority patent/US11099483B2/en
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to CN201880026044.8A priority Critical patent/CN110753882B/en
Priority to CN201880027134.9A priority patent/CN110892328B/en
Priority to PCT/US2018/029160 priority patent/WO2018200536A2/en
Priority to PCT/US2018/031796 priority patent/WO2018208912A2/en
Priority to CN201880030036.0A priority patent/CN110914760B/en
Publication of WO2018194975A2 publication Critical patent/WO2018194975A2/en
Publication of WO2018194975A3 publication Critical patent/WO2018194975A3/en
Publication of WO2018194975A8 publication Critical patent/WO2018194975A8/en
Priority to US16/655,932 priority patent/US11934105B2/en
Anticipated expiration legal-status Critical
Priority to US16/664,478 priority patent/US11054745B2/en
Priority to US16/679,052 priority patent/US11300884B2/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)

Abstract

L'invention concerne un système catoptrique ayant un axe de référence et des premier, deuxième et troisième réflecteurs. Le premier réflecteur contient une source de motif portant un motif sensiblement unidimensionnel. Une combinaison des deuxième et troisième réflecteurs est conçue pour former une image optique du motif, avec un coefficient de dégrossissement N > 1 dans une lumière UV extrême et avec seulement deux faisceaux de lumière qui sont émis au niveau du premier réflecteur à la suite de l'irradiation du premier réflecteur avec de la lumière incidente sur celui-ci. L'invention concerne également un appareil d'exposition utilisant le système catoptrique et un procédé de fabrication de dispositif à l'aide de l'appareil d'exposition.The invention relates to a catoptric system having a reference axis and first, second and third reflectors. The first reflector contains a pattern source having a substantially one-dimensional pattern. A combination of the second and third reflectors is designed to form an optical image of the pattern, with a roughing coefficient N> 1 in extreme UV light and with only two beams of light that are emitted at the first reflector as a result of irradiating the first reflector with incident light thereon. The invention also relates to an exposure apparatus using the catoptric system and a device manufacturing method using the exposure apparatus.

PCT/US2018/027785 2017-04-19 2018-04-16 Figoptical objective for operation in euv spectral region Ceased WO2018194975A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN201880026044.8A CN110753882B (en) 2017-04-19 2018-04-16 Optical imaging, reflection system, exposure tool, apparatus, and device manufacturing method
CN201880027134.9A CN110892328B (en) 2017-04-26 2018-04-24 Reflection system, extreme ultraviolet exposure tool, lithography exposure tool, and optical system
PCT/US2018/029160 WO2018200536A2 (en) 2017-04-26 2018-04-24 Illumination system with flat 1d-patterned mask for use in euv-exposure tool
PCT/US2018/031796 WO2018208912A2 (en) 2017-05-11 2018-05-09 Illumination system with curved 1d-patterned mask for use in euv-exposure tool
CN201880030036.0A CN110914760B (en) 2017-05-11 2018-05-09 Reflection system, extreme ultraviolet exposure tool and lithography exposure tool
US16/655,932 US11934105B2 (en) 2017-04-19 2019-10-17 Optical objective for operation in EUV spectral region
US16/664,478 US11054745B2 (en) 2017-04-26 2019-10-25 Illumination system with flat 1D-patterned mask for use in EUV-exposure tool
US16/679,052 US11300884B2 (en) 2017-05-11 2019-11-08 Illumination system with curved 1d-patterned mask for use in EUV-exposure tool

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US201762487245P 2017-04-19 2017-04-19
US62/487,245 2017-04-19
US201762490313P 2017-04-26 2017-04-26
US62/490,313 2017-04-26
US201762504908P 2017-05-11 2017-05-11
US62/504,908 2017-05-11
US15/599,197 2017-05-18
US15/599,148 2017-05-18
US15/599,148 US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning
US15/599,197 US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US15/599,148 Continuation-In-Part US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning
PCT/US2018/029160 Continuation-In-Part WO2018200536A2 (en) 2017-04-26 2018-04-24 Illumination system with flat 1d-patterned mask for use in euv-exposure tool

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/599,197 Continuation-In-Part US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning
US16/655,932 Continuation US11934105B2 (en) 2017-04-19 2019-10-17 Optical objective for operation in EUV spectral region

Publications (3)

Publication Number Publication Date
WO2018194975A2 WO2018194975A2 (en) 2018-10-25
WO2018194975A3 WO2018194975A3 (en) 2019-02-07
WO2018194975A8 true WO2018194975A8 (en) 2019-02-28

Family

ID=63856867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2018/027785 Ceased WO2018194975A2 (en) 2017-04-19 2018-04-16 Figoptical objective for operation in euv spectral region

Country Status (2)

Country Link
CN (1) CN110753882B (en)
WO (1) WO2018194975A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109960031B (en) * 2019-04-28 2024-02-09 湖南谱峰光电有限公司 Aerostat laser relay mirror system and simulation device and simulation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
US6331710B1 (en) * 1998-12-02 2001-12-18 Zhijiang Wang Reflective optical systems for EUV lithography
CN102754009B (en) * 2009-12-14 2016-02-17 卡尔蔡司Smt有限责任公司 Imaging Optics
DE102010039745A1 (en) * 2010-08-25 2012-03-01 Carl Zeiss Smt Gmbh Imaging optics
US20140253892A1 (en) * 2013-03-11 2014-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme Ultraviolet Lithography Projection Optics System and Associated Methods
US9442384B2 (en) * 2013-03-13 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask

Also Published As

Publication number Publication date
CN110753882B (en) 2024-06-28
WO2018194975A2 (en) 2018-10-25
WO2018194975A3 (en) 2019-02-07
CN110753882A (en) 2020-02-04

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