[go: up one dir, main page]

WO2018193404A1 - Conception numérique de condensateurs d'ordre fractionnaire - Google Patents

Conception numérique de condensateurs d'ordre fractionnaire Download PDF

Info

Publication number
WO2018193404A1
WO2018193404A1 PCT/IB2018/052736 IB2018052736W WO2018193404A1 WO 2018193404 A1 WO2018193404 A1 WO 2018193404A1 IB 2018052736 W IB2018052736 W IB 2018052736W WO 2018193404 A1 WO2018193404 A1 WO 2018193404A1
Authority
WO
WIPO (PCT)
Prior art keywords
fractional order
dielectric
order capacitor
design
candidate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2018/052736
Other languages
English (en)
Inventor
Khaled Nabil Salama
Agamyrat AGAMBAYEV
Mohamed Farhat
Hakan BAGCI
Karam H. RAJAB
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SABIC Global Technologies BV
Original Assignee
SABIC Global Technologies BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SABIC Global Technologies BV filed Critical SABIC Global Technologies BV
Publication of WO2018193404A1 publication Critical patent/WO2018193404A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1272—Semiconductive ceramic capacitors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/12—Computing arrangements based on biological models using genetic models
    • G06N3/126—Evolutionary algorithms, e.g. genetic algorithms or genetic programming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H01G4/206—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 inorganic and synthetic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors

Definitions

  • a fractional order capacitor comprises a first conductive plate connected to a first connecting terminal, a second conductive plate connected to a second connecting terminal, and a composite dielectric disposed between the first plate and the second plate.
  • the composite dielectric comprises a dielectric matrix material and filler particles, where the volume of the filler particles is less than 20% of the volume of the composite dielectric and where the filler particles comprise at least one material comprising a transition metal dichalcogenide.
  • a method of making a fractional order capacitor comprises specifying a frequency range for fractional order capacitor behavior, specifying a phase angle of fractional order capacitor behavior, providing a list of filler materials and data on their permittivity and conductivity, and providing a list of dielectric matrix materials and data on their permittivity.
  • the method further comprises determining a fitness function value for each of a plurality of different candidate fractional order capacitor designs by an application executing on a computer, where each design defines a fill fraction for filler materials, identifies a filler material, and identifies a dielectric matrix material and where the fitness function value is determined based on evaluating the phase angle of the candidate design at each of a plurality of frequencies within the specified frequency range for fractional order capacitor behavior, obtaining different candidate fractional order capacitor designs by the application in part using a genetic algorithm and based on the fitness function value of some candidate fractional order capacitor designs, selecting a candidate fractional order capacitor design by the application based on the fitness function value determined for that candidate.
  • the method may further comprise creating instructions for making a composite dielectric comprised of the dielectric matrix material and the filler material based on the selected candidate fractional order capacitor design and manufacturing a fractional order capacitor based at least in part on the instructions for making the composite dielectric.
  • a method of determining a design for a fractional order capacitor comprises providing a list of filler materials and data on their permittivity and conductivity, where the list comprises molybdenum disulfide (M0S 2 ), molybdenum ditelluride (MoTe 2 ), tungsten disulfide (WS 2 ), tungsten diselenide (WSe 2 ), and single walled carbon nanotubes and providing a list of dielectric matrix materials and data on their permittivity, where the list comprises hafnium dioxide (HfO 2 ), hafnium silicate (HfSiO 4 ), zirconium dioxide (ZrO 2 ), and zirconium silicate (ZrSiO 4 ).
  • M0S 2 molybdenum disulfide
  • MoTe 2 molybdenum ditelluride
  • WS 2 tungsten disulfide
  • WSe 2 tungsten diselenide
  • single walled carbon nanotubes and providing a list
  • the method may further comprise creating instructions for making a composite dielectric composed of the dielectric matrix material and the filler material based on the selected candidate fractional order capacitor design. In an embodiment, the method may further comprise manufacturing a fractional order capacitor based at least in part on the instructions for making the composite dielectric.
  • the method further comprises selecting a first and a second dielectric material from the list of dielectric materials by an application executing on a computer system based on the specified phase angle, based on the specified frequency range, based on the data on the permittivity of the first dielectric material, and based on the data on the permittivity of the second dielectric material, determining a thickness of a composite dielectric layer of the fractional order capacitor design by the application based on determining a first thickness of the first dielectric material and a second thickness of the second dielectric material, where the thickness of the composite dielectric layer is based on the sum of the first and second thickness, where the first and second thicknesses are determined to achieve the specified phase angle of the fractional order capacitor over the specified frequency range of fractional order behavior, and creating instructions for making the fractional order capacitor based on the selected dielectric materials, the first thickness, and the second thickness.
  • FIG. 1 is an illustration of a fractional order capacitor having a composite dielectric according to an embodiment of the disclosure.
  • FIG. 2 is an illustration of a fractional order capacitor having a layered dielectric according to another embodiment of the disclosure.
  • FIG. 3 is an illustration of a fractional order capacitor having a layered dielectric according to yet another embodiment of the disclosure.
  • FIG. 4 is a flow chart of a method according to an embodiment of the disclosure.
  • FIG. 5 is a flow chart of another method according to an embodiment of the disclosure.
  • FIG. 6 is a flow chart of yet another method according to an embodiment of the disclosure.
  • FIG. 7 is a block diagram of a computer system according to an embodiment of the disclosure.
  • the present disclosure teaches a fractional order capacitor (FOC) device, a method for making an FOC, and a method for designing an FOC based on a performance specification of the FOC.
  • the FOC device comprises two conductive plates and a composite dielectric.
  • the composite dielectric may be designed using the method for designing an FOC taught herein.
  • the composite dielectric may comprise a dielectric matrix material and filler particles.
  • the filler particles comprise less than about 20% by volume of the composite dielectric. Said in another way, the filler particles are present in a concentration below the percolation threshold of the composite dielectric.
  • the filler particles may comprise semiconductor material.
  • the filler particles may comprise at least one material comprising a transition metal dichalcogenide.
  • the filler particles may comprise two or more different transition metal dichalcogenides.
  • the filler particles may comprise a mix of graphene particles and particles comprising a material comprising a transition metal dichalcogenide.
  • the filler particles may comprise a mix of transition metal dichalcogenide material at different dopant levels, for example a mix of a first transition metal dichalcogenide material at a first dopant level and the first transition metal dichalcogenide material at a second dopant level.
  • the filler particles may comprise a mix of molybdenum disulfide (M0S 2 ) particles having a first dopant level and M0S 2 particles having a second dopant level.
  • M0S 2 molybdenum disulfide
  • the method of making an FOC may embed within it steps of designing an FOC based on an input performance specification of the FOC, where the input performance specification may comprise a desired phase angle and an operational frequency range for the FOC.
  • the method for designing the FOC will determine an FOC design which satisfies the performance specification. Designing the FOC may be implemented, in part, as an application or computer program that executes on a computer.
  • the FOC design comprises conventional terminals, conventional plates, and a designed composite dielectric, where the composite dielectric promotes the fractional order behavior of the capacitor. It is understood that the FOC design may be implemented and manufactured in a variety of different forms.
  • the conductive plates may be implemented as two sheets of metallic foil that are separated by the composite dielectric and rolled up to form a cylindrical shape.
  • the conductive plates may be implemented as metal layers in a semiconductor manufacturing process where multiple layers are built up successively. For example, a first conductive layer may be deposited on a semiconductor substrate, the composite dielectric may be deposited on top of the first conductive layer, and a second conductive layer may be deposited on top of the composite dielectric.
  • a plurality of planar metal regions may be deposited on top of the composite dielectric, forming a plurality of FOCs with a shared first conductive plate (first conductive layer), a shared composite dielectric, and separate second conductive plates for each separate capacitor.
  • the composite dielectric may be composed of a dielectric matrix material mixed with one or more filler materials different from the matrix material, where the filler materials are provided in a ratio that is below a percolation threshold of the composite dielectric (e.g., is provided in a dilute regime or in a relatively sparse amount).
  • the percolation threshold of the composite dielectric may be less than about 20% of the volume of the composite dielectric comprises filler materials.
  • the percolation threshold of the composite dielectric may be less than about 15% of the volume of the composite dielectric comprises filler materials.
  • the percolation threshold of the composite dielectric may be less than about 10% of the volume of the composite dielectric comprises filler materials.
  • the percolation threshold of the composite dielectric may be some other percentage of filler materials.
  • the filler material may be supplied as small particles that are suspended in the dielectric matrix material to form the composite dielectric).
  • the composite dielectric may be composed of layers of dielectric materials where each layer is composed of a different dielectric material.
  • the dielectric matrix material may be selected from high-k dielectric materials (e.g., a material with a high dielectric constant) such as hafnium dioxide (Hf0 2 ), hafnium silicate (HfSi0 4 ), zirconium dioxide (Zr0 2 ), or zirconium silicate (ZrSi0 4 ).
  • the dielectric matrix material may be selected from one or more polymers, such as polyvinylidene fluoride (PVDF).
  • the filler materials may be selected from transition metal dichalcogenide semiconductor materials such as molybdenum disulfide (M0S 2 ), molybdenum ditelluride (MoTe 2 ), tungsten disulfide (WS 2 ), and/or tungsten diselenide (WSe 2 ).
  • transition metal dichalcogenide semiconductor materials such as molybdenum disulfide (M0S 2 ), molybdenum ditelluride (MoTe 2 ), tungsten disulfide (WS 2 ), and/or tungsten diselenide (WSe 2 ).
  • M0S 2 molybdenum disulfide
  • MoTe 2 molybdenum ditelluride
  • WS 2 tungsten disulfide
  • WSe 2 tungsten diselenide
  • single walled carbon nanotubes which exhibit semiconductor-like behavior, may also be used as filler materials.
  • Each filler material, for example MoS 2 may be differentiated by the inclusion
  • the application executing on the computer identifies a plurality of candidate FOC designs, evaluates the phase angle associated with each candidate FOC design across the predefined frequency band, and determines a fitness value of each design based on the extent to which the phase angle evaluated across the predefined frequency range approaches a predefined or target phase angle.
  • the application may evaluate the phase angle at a frequency based on estimating the phase angle using a mathematical model that employs the candidate FOC design parameters as an input. Based on the determined fitness values, some candidate FOC designs may be rejected, and other candidate FOC designs may be retained for recombining and mutating according to a genetic algorithm to provide "children" candidate FOC designs to be evaluated in a second iteration of the genetic algorithm. At the end of the genetic algorithm, the candidate FOC design whose fitness value best satisfies the fitness criteria may be selected as the final FOC design.
  • a candidate FOC design may correspond to a "chromosome” in the genetic algorithm, and individual elements of the design may correspond to a "gene” in the genetic algorithm.
  • the elements of the candidate FOC designs that correspond to the "genes" comprise the electrical characteristics of each of one or more filler material and its fractional portion of the composite dielectric.
  • Adding more filler materials is a technique that can broaden the frequency bandwidth in which the phase angle of the FOC satisfies the input desired phase angle.
  • Adapting or tuning the conductivity of filler material versions by adapting dopant levels can adjust a ripple or variation of the phase angle in the specified frequency bandwidth.
  • Adjusting the fill fraction of filler materials can adjust the amplitude of the phase angle.
  • the designed FOC can be tuned or designed to both achieve a predefined or target phase angle and achieve a predefined frequency bandwidth.
  • an aspect ratio of filler materials may be selected to further adapt the characteristic behavior of the composite dielectric.
  • the shape of filler materials can be varied between oblate to spherical to prolate.
  • the FOC 100 comprises a first plate 102 connected to a first terminal 104, a second plate 106 connected to a second terminal 108, and a composite dielectric 1 10. It is understood that the illustration of the FOC 100 is not intended to represent a relative scale or a particular realization form.
  • an FOC may be realized as two extended metal ribbons sandwiching an extended composite dielectric ribbon, which are then rolled up tightly to form a cylindrical shape.
  • the FOC may be built as a component of a semiconductor chip, for example deposited on a semiconductor die using semiconductor manufacturing processes, or as a component of a system on a chip (SOC).
  • the composite dielectric 1 10 comprises a dielectric matrix 1 12 and a plurality of filler particles 1 14.
  • the shapes and orientations of the filler particles 1 14 are depicted in FIG. 1 to suggest that they may be disposed with random orientations within the dielectric matrix 1 12.
  • the filler particles 1 14 are illustrated as elongated (either oblate or prolate, depending on the reference axis of the particles) in FIG. 1
  • the filler particles 1 14 may have a different aspect ratio (e.g., spherical).
  • the composite dielectric 1 10 may comprise a mix of filler particles 1 14 of different aspect ratios.
  • the filler particles 1 14 may be very small, for example less than 100 ⁇ in length, less than 10 ⁇ in length, less than 1 ⁇ in length, less than 100 nm in length, or some other size.
  • Part of the design of a capacitor, including the design of a fractional order capacitor may involve designing a separation between the plates 102, 106 and a surface area of the plates 102, 106. While the separation and area of the plates 102, 106 may be designed to realize the FOC 100, this may be deemed a conventional design parameter. Therefore, this disclosure will not comment further or teach how to design the separation and area of the plates 102, 106. Instead, the disclosure focuses on the numerical design of the composite dielectric 1 10 which determines the specific characteristic of the fractional order behavior of the FOC 100.
  • ⁇ is the phase angle and 8 e ⁇ is the effective permittivity of the composite dielectric 1 10 at the given frequency.
  • the effective permittivity can be thought of as the aggregate permittivity of the composite dielectric 1 10.
  • Permittivity is a fundamental physical property of matter generally, and of dielectrics in specific, that is a measure of how an electric field affects and is affected by the material.
  • the effective permittivity of the composite dielectric 1 10 can be determined using an effective medium approximation model, for example using the Bruggeman's model, the Maxwell-Garnett mixing rule, or using another approximation model or equation.
  • Equations EQ 1 , EQ2, EQ3, EQ4, and EQ 5 may be used to develop algorithms in the application to determine the phase angle of the FOC 100 at each of a plurality of different frequencies. It is understood that the equations may be simplified and/or mathematically transformed to make computer solution of the equations more tractable and/or efficient. In some circumstances, some of the terms of the equations may be simplified. For example, when the filler materials 1 14 are spherical the depolarization factors N may all be equal and EQ 5 may be further simplified. For example, if the effect of depolarization factors N may be considered of negligible importance, EQ 5 may be further simplified.
  • the application may determine the phase angle of the FOC 100 at a plurality of frequencies that lie within a predefined operational frequency range of the FOC 100 and possibly some frequencies outside the operational frequency range but neighboring the bottom of the range and neighboring the top of the range.
  • the operational frequency range is the range of frequencies at which it is desired that the FOC 100 exhibit the target phase angle. This may be referred to as the constant phase zone (CPZ) of the FOC 100, notwithstanding that the phase angle may vary within that CPZ, for example within an allowed maximum and minimum phase angle or with a maximum ripple amplitude. It is noted in passing that the a-value mentioned above and the phase angle ⁇ can be related by:
  • numerator is the real part of E e ⁇ and the denominator is the imaginary part of £ e jj (it is understood that ⁇ ⁇ ⁇ is a complex number having both a real component or part and an imaginary component or part).
  • a fractional order capacitor as described herein may have an a in the CPZ such that a is in a range defined by: 0 ⁇ a ⁇ 0.95 (i.e., 0 > ⁇ > -85.5°), 0 ⁇ a ⁇ 0.90 (i.e.. 0 > ⁇ > -81°), or 0 ⁇ a ⁇ 0.85 (i.e., 0 > ⁇ >—76.5°).
  • non-ideal "integer-order" capacitors are understood to have a ⁇ 0.95 (i.e., ⁇ —85.5°).
  • the phase angle may be determined by the application executing on the computer system at some predefined number of frequencies within the predefined operational frequency range, for example at about 100 different frequencies, at about 500 different frequencies, at about 1 ,000 different frequencies, at about 5,000 different frequencies, or some other number of different frequencies.
  • the frequencies at which the phase angle is to be determined may be distributed linearly across the predefined operational frequency range. For example, if a frequency range of 1 GHz is defined and the phase angle is to be determined for 1 ,000 different frequencies, the 1 ,000 different frequencies may be each separated by about 1 MHz (1000 x 1 MHz is 1 GHz). Alternatively the frequencies at which the phase angle is to be determined may be distributed in a non-linear way, for example logarithmically.
  • a fitness function may be defined for evaluating how well a candidate FOC design satisfies a set of predefined objectives or operational specifications of an FOC. This fitness function may involve comparing the phase angle of the candidate FOC design calculated at each of a plurality of frequencies to the specified target phase angle and determining a fitness metric that represents the aggregate amount of agreement between the target phase angle and each of the frequency-dependent calculated phase angles.
  • the fitness function may have the general form of:
  • EQ 8 The fitness metric defined by EQ 8 is a sum of squares of differences. Because each difference is squared, each term of the sum will be a positive value. The closer the phase angle of the candidate FOC design is to the target phase angle, at a given frequency, the smaller the square of the difference will be. Thus, generally speaking, a lower numerical value of the fitness metric of EQ 8 corresponds to a better match of the corresponding candidate FOC design to the specification of the desired FOC performance.
  • the application may proceed by proposing a plurality of FOC design candidates, determining a fitness of each of the design candidates, rejecting some of the candidates, and creating a second generation of FOC design candidates based on the retained candidates.
  • a genetic algorithm may be used to "mate" characteristics of fitter "parent" FOC design candidates to create "child” FOC design candidates to evaluate.
  • the genetic algorithm may converge on a successively more fit generation of FOC design candidates.
  • the genetic algorithm iteratively creates a new generation of FOC design candidates, calculates the fitness metric on those candidates, selects fitter parents for the subsequent generation, and creates that subsequent generation from the parents.
  • a "mutation" mechanism may also provide for some variation of "child” FOC design candidate "genes" from the set of "genes” present in the parents.
  • the application may terminate the genetic algorithm when an FOC design candidate is determined to have a fitness value that satisfies a fitness criteria (e.g., is less than a threshold value). The application may terminate after a maximum number of iterations, choosing the best FOC design candidate based on the fitness criteria and fitness evaluations.
  • the FOC capacitor 130 comprises the first plate 102, the first electrical terminal 104, the second plate 106, and the second terminal 108, and a composite dielectric 132.
  • the composite dielectric 132 comprises a first dielectric layer 134 of thickness Ti and a second dielectric layer 136 of thickness T 2 .
  • the composite dielectric 132 may be referred to as a layered dielectric.
  • the first dielectric layer 134 comprises a first dielectric material having a first frequency-dependent permittivity.
  • the second dielectric layer 136 comprises a second different dielectric material having a second different frequency-dependent permittivity.
  • the application that executes on the computer can design the FOC 130 based on a specification of desired performance of the FOC 130, for example a specified phase angle, a maximum phase angle ripple amplitude (or a maximum and minimum specification of allowed phase angle), and an operational frequency bandwidth or constant phase zone.
  • the application may have a list of available dielectric materials for composing the layers 134, 136.
  • the application may be provided with a function or formula for determining the frequency-dependent permittivity of the different available dielectric materials.
  • the application may have a function for determining the effective permittivity of the composite dielectric 132 at a given frequency based on the permittivity of each dielectric layer 134, 136 at the given frequency, based on T-i, and based on T 2 .
  • the application may not use a genetic algorithm to determine the design of the FOC 130.
  • the FOC design may be translated into a set of manufacturing instructions or a "recipe" for making the FOC 130.
  • the manufacturing instructions for making the FOC 130 may restrict themselves to defining the dielectric materials 134, 136 used and the thicknesses Ti and T 2 .
  • the manufacturing instructions may further define an area of the plates 102, 106. The definition of the area of the plates 102, 106 may be provided as a length and a width of the plates 102, 106.
  • the composite dielectric 132 may have a length and width substantially equal to that defined for the plates 102, 106, for example some small increment less wide and some small increment less long than the plates 102, 106 or possibly a small increment wider and longer than the plates 102, 106.
  • the FOC 130 may be built in accordance with the manufacturing instructions. It is understood that some aspects of the manufacturing of the FOC 130 may be determined separately. For example, the length, cross-sectional area, and material of the terminals 104, 108 may be independently determined or defined. A packaging of the FOC 130 may be determined separately.
  • the FOC capacitor 130 comprises the first plate 102, the first electrical terminal 104, the second plate 106, and the second terminal 108, and a composite dielectric 152.
  • the composite dielectric 152 comprises a third dielectric layer 154 of thickness T 3 , a fourth dielectric layer 156 of thickness T 4: and a fifth dielectric layer 158 of thickness T 5 .
  • the composite dielectric 152 may be referred to as a layered dielectric.
  • the third dielectric layer 154 comprises a third dielectric material having a third frequency-dependent permittivity.
  • the fourth dielectric layer 156 comprises a fourth different dielectric material having a fourth different frequency- dependent permittivity.
  • the fifth dielectric layer 158 comprises a fifth different dielectric material having a fifth different frequency-dependent permittivity.
  • the effective permittivity of the composite dielectric 152, and hence the phase angle ⁇ of the FOC 150 is a value intermediate between extremes of the third frequency-dependent permittivity of the third dielectric layer 154, the fourth frequency-dependent permittivity of the fourth dielectric layer 156, and the fifth frequency-dependent permittivity of the fifth dielectric layer 158.
  • the composite dielectric 152 may have a length and width substantially equal to that defined for the plates 102, 106, for example some small increment less wide and some small increment less long than the plates 102, 106 or possibly a small increment wider and longer than the plates 102, 106.
  • the FOC 150 may be built in accordance with the manufacturing instructions. It is understood that some aspects of the manufacturing of the FOC 150 may be determined separately. For example, the length, cross-sectional area, and material of the terminals 104, 108 may be independently determined or defined. A packaging of the FOC 150 may be determined separately.
  • Method 200 may be performed to design a fractional order capacitor, for example the FOC 100 described above with reference to FIG. 1 .
  • a frequency range for fractional order capacitor behavior For example the FOC 100 described above with reference to FIG. 1 .
  • a phase angle of fractional order capacitor behavior specify a phase angle of fractional order capacitor behavior.
  • the processing of blocks 202 and 204 may be performed by a technician or engineer entering these values to a workstation or computer console that presents an interface of an FOC design application that executes on a computer.
  • a list of dielectric matrix materials and data on their permittivity For example the FOC 100 described above with reference to FIG. 1 .
  • an application executing on a computer determines a fitness function value for each of a plurality of different candidate fractional order capacitor designs, where each design defines a fill fraction for filler materials, identifies a filler material, and identifies a dielectric matrix material and where the fitness function value is determined based on evaluating the phase angle of the candidate design at each of a plurality of frequencies within the specified frequency range for fractional order capacitor behavior.
  • the application may be the FOC design application. Computers are further discussed herein after.
  • the application obtains different candidate fractional order capacitor designs by the application in part using a genetic algorithm and based on the fitness function value of some candidate fractional order capacitor designs.
  • the processing of blocks 210 and 212 may be repeated a plurality of times, for example to promote the genetic algorithm to successively converge on fitter and fitter design candidates.
  • the iteration may finish when the fitness metric of a candidate design satisfies a fitness criteria (e.g. , the fitness metric is lower than a predefined value) or when a pre-defined number of iterations have been completed.
  • the application selects a candidate fractional order capacitor design based on the fitness function value determined for that candidate.
  • Method 230 may be performed to design a fractional order capacitor, for example FOC 100 described above with reference to FIG. 1 .
  • Method 230 may be performed to design a fractional order capacitor, for example FOC 100 described above with reference to FIG. 1 .
  • the list comprises molybdenum disulfide (M0S2), molybdenum ditelluride (MoTe 2 ), tungsten disulfide (WS2), tungsten diselenide (WSe 2 ), and single walled carbon nanotubes.
  • M0S2 molybdenum disulfide
  • MoTe 2 molybdenum ditelluride
  • WS2 tungsten disulfide
  • WSe 2 tungsten diselenide
  • single walled carbon nanotubes single walled carbon nanotubes.
  • At block 234, provide a list of dielectric matrix materials and data on their permittivity, where the list comprises hafnium dioxide (Hf0 2 ), hafnium silicate (HfSi0 4 ), zirconium dioxide (Zr02), and zirconium silicate (ZrSi0 4 ).
  • the lists and data of blocks 232, 234 may be provided to an FOC design application from a configuration file or may be embedded in code that implements the application.
  • each design defines a fill fraction for filler materials, identifies a filler material, and identifies a dielectric matrix material and where the fitness function value is determined based on determining the phase angle of the candidate design at each of a plurality of frequencies within a predefined frequency range for fractional order capacitor behavior using a model for dielectric mixtures and comparing to a target phase angle.
  • the method 230 may further comprise building the fractional order capacitor according to the selected fractional order capacitor design selected in block 240.
  • the method 260 may be used to design a fractional order capacitor (FOC) such as FOC 130 or FOC 150, as described above with reference to FIG. 2 and FIG. 3 respectively.
  • FOC fractional order capacitor
  • At block 262 specify a frequency range for fractional order capacitor behavior.
  • At block 264 specify a phase angle of fractional order capacitor behavior.
  • At block 266 provide a list of dielectric materials and data on their permittivity.
  • an application executing on a computer selects a first and a second dielectric material from the list of dielectric materials based on the specified phase angle, based on the specified frequency range, based on the data on the permittivity of the first dielectric material, and based on the data on the permittivity of the second dielectric material.
  • the application determines a thickness of a composite dielectric layer of the fractional order capacitor design on determining a first thickness of the first dielectric material and a second thickness of the second dielectric material, where the thickness of the composite dielectric layer is based on the sum of the first and second thickness, where the first and second thicknesses are determined to achieve the specified phase angle of the fractional order capacitor over the specified frequency range of fractional order behavior.
  • the application creates instructions for making the fractional order capacitor based on the selected dielectric materials, the first thickness, and the second thickness.
  • the method further comprises, at block 274, building a fractional order capacitor according to the instructions for making the fractional order capacitor.
  • FIG. 7 illustrates a computer system 380 suitable for implementing one or more embodiments disclosed herein.
  • the computer system 380 includes a processor 382 (which may be referred to as a central processor unit or CPU) that is in communication with memory devices including secondary storage 384, read only memory (ROM) 386, random access memory (RAM) 388, input/output (I/O) devices 390, and network connectivity devices 392.
  • the processor 382 may be implemented as one or more CPU chips.
  • a design that is still subject to frequent changes may be preferred to be implemented in software, because re-spinning a hardware implementation is more expensive than re-spinning a software design.
  • a design that is stable that will be produced in large volume may be preferred to be implemented in hardware, for example in an application specific integrated circuit (ASIC), because for large production runs the hardware implementation may be less expensive than the software implementation.
  • ASIC application specific integrated circuit
  • a design may be developed and tested in a software form and later transformed, by well-known design rules, to an equivalent hardware implementation in an application specific integrated circuit that hardwires the instructions of the software.
  • a machine controlled by a new ASIC is a particular machine or apparatus, likewise a computer that has been programmed and/or loaded with executable instructions may be viewed as a particular machine or apparatus.
  • the CPU 382 may execute a computer program or application.
  • the CPU 382 may execute software or firmware stored in the ROM 386 or stored in the RAM 388.
  • the CPU 382 may copy the application or portions of the application from the secondary storage 384 to the RAM 388 or to memory space within the CPU 382 itself, and the CPU 382 may then execute instructions that the application is comprised of.
  • the CPU 382 may copy the application or portions of the application from memory accessed via the network connectivity devices 392 or via the I/O devices 390 to the RAM 388 or to memory space within the CPU 382, and the CPU 382 may then execute instructions that the application is comprised of.
  • an application may load instructions into the CPU 382, for example load some of the instructions of the application into a cache of the CPU 382.
  • an application that is executed may be said to configure the CPU 382 to do something, e.g. , to configure the CPU 382 to perform the function or functions promoted by the subject application.
  • the CPU 382 becomes a specific purpose computer or a specific purpose machine.
  • the secondary storage 384 is typically comprised of one or more disk drives or tape drives and is used for non-volatile storage of data and as an over-flow data storage device if RAM 388 is not large enough to hold all working data. Secondary storage 384 may be used to store programs which are loaded into RAM 388 when such programs are selected for execution.
  • the ROM 386 is used to store instructions and perhaps data which are read during program execution. ROM 386 is a non-volatile memory device which typically has a small memory capacity relative to the larger memory capacity of secondary storage 384.
  • the RAM 388 is used to store volatile data and perhaps to store instructions. Access to both ROM 386 and RAM 388 is typically faster than to secondary storage 384.
  • the secondary storage 384, the RAM 388, and/or the ROM 386 may be referred to in some contexts as computer readable storage media and/or non-transitory computer readable media.
  • I/O devices 390 may include printers, video monitors, liquid crystal displays (LCDs), touch screen displays, keyboards, keypads, switches, dials, mice, track balls, voice recognizers, card readers, paper tape readers, or other well-known input devices.
  • LCDs liquid crystal displays
  • touch screen displays keyboards, keypads, switches, dials, mice, track balls, voice recognizers, card readers, paper tape readers, or other well-known input devices.
  • the network connectivity devices 392 may take the form of modems, modem banks, Ethernet cards, universal serial bus (USB) interface cards, serial interfaces, token ring cards, fiber distributed data interface (FDDI) cards, wireless local area network (WLAN) cards, radio transceiver cards that promote radio communications using protocols such as code division multiple access (CDMA), global system for mobile communications (GSM), long-term evolution (LTE), worldwide interoperability for microwave access (WiMAX), near field communications (NFC), radio frequency identity (RFID), and/or other air interface protocol radio transceiver cards, and other well-known network devices. These network connectivity devices 392 may enable the processor 382 to communicate with the Internet or one or more intranets.
  • CDMA code division multiple access
  • GSM global system for mobile communications
  • LTE long-term evolution
  • WiMAX worldwide interoperability for microwave access
  • NFC near field communications
  • RFID radio frequency identity
  • RFID radio frequency identity
  • the processor 382 might receive information from the network, or might output information to the network in the course of performing the above-described method steps. Such information, which is often represented as a sequence of instructions to be executed using processor 382, may be received from and outputted to the network, for example, in the form of a computer data signal embodied in a carrier wave.
  • Such information may be received from and outputted to the network, for example, in the form of a computer data baseband signal or signal embodied in a carrier wave.
  • the baseband signal or signal embedded in the carrier wave may be generated according to several methods well-known to one skilled in the art.
  • the baseband signal and/or signal embedded in the carrier wave may be referred to in some contexts as a transitory signal.
  • a sixth aspect can include the fractional order capacitor of any of the first to fifth aspects, wherein the dielectric matrix material comprises a polymer material.
  • a seventeenth aspect can include the method of the sixteenth aspect, further comprising creating instructions for making a composite dielectric composed of the dielectric matrix material and the filler material based on the selected candidate fractional order capacitor design.
  • a twentieth aspect can include the method of the sixteenth aspect, wherein determining the phase angle of the candidate design at each of a plurality of frequencies is based on an effective medium approximation model.
  • a twenty third aspect can include the method of the twenty second aspect, further comprising: selecting a third dielectric material from the list of dielectric materials by the application based on the specified phase angle, based on the specified frequency range, and based on the data on the permittivity of the third dielectric material; and determining the thickness of the composite dielectric layer of the fractional order capacitor design by the application further based on determining a third thickness of the third dielectric material, where the thickness of the composite dielectric layer is determined based on the sum of the first, second, and third thickness, where the first, second, and third thicknesses are determined to achieve the specified phase angle of the fractional order capacitor over the specified frequency range of fractional order behavior.
  • a twenty fourth aspect can include the method of the twenty second to twenty third aspects, wherein providing the list of dielectric materials and data on their permittivity is accomplished by embedding the list and data in the application or by the application reading the list and data from a configuration file stored on the computer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Evolutionary Biology (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • General Health & Medical Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Linguistics (AREA)
  • Biomedical Technology (AREA)
  • Artificial Intelligence (AREA)
  • Genetics & Genomics (AREA)
  • Physiology (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne un condensateur d'ordre fractionnaire. Le condensateur d'ordre fractionnaire comprend une première plaque conductrice connectée à une première borne de connexion, une seconde plaque conductrice connectée à une seconde borne de connexion, et un diélectrique composite disposé entre la première plaque et la seconde plaque. Le diélectrique composite comprend un matériau de matrice diélectrique et des particules de charge, le volume des particules de charge étant inférieur à 20 % du volume du diélectrique composite et les particules de charge comprenant au moins un dichalcogénure de métal de transition.
PCT/IB2018/052736 2017-04-19 2018-04-19 Conception numérique de condensateurs d'ordre fractionnaire Ceased WO2018193404A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762487466P 2017-04-19 2017-04-19
US62/487,466 2017-04-19

Publications (1)

Publication Number Publication Date
WO2018193404A1 true WO2018193404A1 (fr) 2018-10-25

Family

ID=62111142

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2018/052736 Ceased WO2018193404A1 (fr) 2017-04-19 2018-04-19 Conception numérique de condensateurs d'ordre fractionnaire

Country Status (1)

Country Link
WO (1) WO2018193404A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025145511A1 (fr) * 2024-01-04 2025-07-10 广东大湾区空天信息研究院 Procédé et appareil de conception de matériau composite diélectrique, et dispositif, système informatique et support

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140266374A1 (en) * 2013-03-14 2014-09-18 Saudi Basic Industries Corporation Fractional Order Capacitor
US20150179730A1 (en) * 2013-12-19 2015-06-25 Intermolecular, Inc. ZrO-Based High K Dielectric Stack for Logic Decoupling Capacitor or Embedded DRAM

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140266374A1 (en) * 2013-03-14 2014-09-18 Saudi Basic Industries Corporation Fractional Order Capacitor
US20150179730A1 (en) * 2013-12-19 2015-06-25 Intermolecular, Inc. ZrO-Based High K Dielectric Stack for Logic Decoupling Capacitor or Embedded DRAM

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
D.S. WEILE ET AL: "Genetic Algorithm Optimization Applied to Electromagnetics: A Review", IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION., vol. 45, no. 3, 1 March 1997 (1997-03-01), US, pages 343 - 353, XP055502492, ISSN: 0018-926X, DOI: 10.1109/8.558650 *
LIN CHI-CHOU ET AL: "Improvement of zirconium-doped hafnium oxide high-dielectric properties by adding molybdenum", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 31, no. 3, 1 May 2013 (2013-05-01), pages 30605-1 - 30605-5, XP012172531, ISSN: 2166-2746, [retrieved on 20130423], DOI: 10.1116/1.4802778 *
QINGCHAO JIA ET AL: "MoS2 Nanosheet Superstructures Based Polymer Composites for High-Dielectric and Electrical Energy Storage Applications -- Supporting Information", THE JOURNAL OF PHYSICAL CHEMISTRY C, 2 May 2016 (2016-05-02), pages S1 - S6, XP055501590, Retrieved from the Internet <URL:https://pubs.acs.org/doi/suppl/10.1021/acs.jpcc.6b02968/suppl_file/jp6b02968_si_001.pdf> [retrieved on 20180823], DOI: 10.1021/acs.jpcc.6b02968 *
QINGCHAO JIA ET AL: "MoS2 Nanosheet Superstructures Based Polymer Composites for High-Dielectric and Electrical Energy Storage Applications", JOURNAL OF PHYSICAL CHEMISTRY C, vol. 120, no. 19, 2 May 2016 (2016-05-02), pages 10206 - 10214, XP055501572, ISSN: 1932-7447, DOI: 10.1021/acs.jpcc.6b02968 *
RAVIKANT SHARMA ET AL: "Large-Area Rolled-Up Nanomembrane Capacitor Arrays for Electrostatic Energy Storage", ADVANCED ENERGY MATERIALS, vol. 4, no. 9, 24 June 2014 (2014-06-24), DE, pages 1301631 - 1301631, XP055305768, ISSN: 1614-6832, DOI: 10.1002/aenm.201301631 *
REQUENA-PEREZ M E ET AL: "Combined Use of Genetic Algorithms and Gradient Descent Optimization Methods for Accurate Inverse Permittivity Measurement", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 54, no. 2, PART 01, 1 February 2006 (2006-02-01), pages 615 - 624, XP001240041, ISSN: 0018-9480, DOI: 10.1109/TMTT.2005.862671 *
STOICA A ET AL: "Evolutionary Design of Electronic Devices and Circuits", PROCEEDINGS OF THE 1999 CONGRESS ON EVOLUTIONARY COMPUTATION-CEC99, 6-9 JULY 1999, vol. 2, 6 July 1999 (1999-07-06), pages 1271 - 1278, XP010344497, ISBN: 0-7803-5536-9, DOI: 10.1109/CEC.1999.782588 *
WILLIAMSON I ET AL: "Structural, electrical, phonon, and optical properties of Ti- and V-doped two-dimensional MoS2", CHEMICAL PHYSICS LETTERS, vol. 674, 17 February 2017 (2017-02-17), pages 157 - 163, XP029938063, ISSN: 0009-2614, DOI: 10.1016/J.CPLETT.2017.02.053 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025145511A1 (fr) * 2024-01-04 2025-07-10 广东大湾区空天信息研究院 Procédé et appareil de conception de matériau composite diélectrique, et dispositif, système informatique et support

Similar Documents

Publication Publication Date Title
Liu et al. Multilayer reservoir computing based on ferroelectric α‐In2Se3 for hierarchical information processing
Dirkmann et al. Filament growth and resistive switching in hafnium oxide memristive devices
Yang et al. Understanding the percolation characteristics of nonlinear composite dielectrics
Min et al. Machine learning assisted optimization of electrochemical properties for Ni-rich cathode materials
WO2018193403A1 (fr) Procédé de modélisation d&#39;une conception de condensateur d&#39;ordre fractionnel
US20200210879A1 (en) Multi-mode qubit readout and qubit state assignment
US10896780B2 (en) Resonant LC tank package and method of manufacture
WO2018193404A1 (fr) Conception numérique de condensateurs d&#39;ordre fractionnaire
Arab et al. Study of dielectric behavior of ternary composites of epoxy-barium titanate with iron oxide and ferrite in the band (DC-12.5 GHz)
Shimano et al. Machine learning and atomistic origin of high dielectric permittivity in oxides
Ascoli et al. Closed‐form analytical solution for on‐switching dynamics in a TaO memristor
Halder et al. Study of AC conductivity and dielectric behaviour of hydrothermally synthesised molybdenum disulphide
Kim et al. High-energy-density sol–gel thin film based on neat 2-cyanoethyltrimethoxysilane
US10833652B1 (en) Superconducting resonator definition based on one or more attributes of a superconducting circuit
Wu et al. Accurate and efficient numerical simulation of dielectrically anisotropic particles
Koziel et al. Low-cost surrogate-assisted statistical analysis of miniaturized microstrip couplers
Bakhti et al. Dielectric behavior of a sintered heterogeneous ternary composite resin/BT/Cu2O
Prodhan et al. Effective Model Reduction Scheme for the Electronic Structure of Highly Doped Semiconducting Polymers
Agambayev Design, fabrication and application of fractional-order capacitors
Xi et al. Accelerating Low-k Dielectric Material Discovery: From Graph Machine Learning to Synthesis
Bartroff et al. A Berry-Esseen bound for the uniform multinomial occupancy model
Jezequel et al. Mode-Shell correspondence, a unifying phase space theory in topological physics-Part II: Higher-dimensional spectral invariants
Koziel et al. Computationally-efficient statistical design and yield optimization of resonator-based notch filters using feature-based surrogates
JP7205121B2 (ja) ペーストの設計方法、ペーストの製造方法
Koziel et al. Fast machine-learning-enabled size reduction of microwave components using response features

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18722217

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18722217

Country of ref document: EP

Kind code of ref document: A1