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WO2018192208A1 - Led灯源、灯条及显示装置 - Google Patents

Led灯源、灯条及显示装置 Download PDF

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Publication number
WO2018192208A1
WO2018192208A1 PCT/CN2017/109345 CN2017109345W WO2018192208A1 WO 2018192208 A1 WO2018192208 A1 WO 2018192208A1 CN 2017109345 W CN2017109345 W CN 2017109345W WO 2018192208 A1 WO2018192208 A1 WO 2018192208A1
Authority
WO
WIPO (PCT)
Prior art keywords
barrier
quantum dot
layer formed
light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/109345
Other languages
English (en)
French (fr)
Inventor
李泽龙
潘俊
强科文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen TCL New Technology Co Ltd
Original Assignee
Shenzhen TCL New Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen TCL New Technology Co Ltd filed Critical Shenzhen TCL New Technology Co Ltd
Publication of WO2018192208A1 publication Critical patent/WO2018192208A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/108—Materials and properties semiconductor quantum wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Definitions

  • the utility model relates to the field of LED display, in particular to an LED light source, a light bar and a display device.
  • a conventional LED light source includes a blue light chip that emits blue light when it operates.
  • the blue light needs to be converted into white light by a wavelength conversion portion disposed outside the LED light source, and supplied to a light bar or a display device. Since the conventional wavelength conversion portion is disposed outside the LED light source, it is necessary to cover the entire LED light source to convert most of the blue light into white light.
  • quantum dots Since the quantum dots are excited, a laser having a wide color gamut can be generated, in order to make the backlight of the display device have a wider color gamut.
  • Existing backlight modules mostly use quantum tubes or quantum films to encapsulate quantum dots, which are placed in the external light path of the LED light source to obtain white light with a wide color gamut.
  • quantum film method when a quantum film method is employed, a large number of quantum dots are required.
  • the quantum tube method When the quantum tube method is adopted, the quantum tube needs to be fixed by an additional device, and the quantum tube is more susceptible to damage due to impact or vibration, resulting in an increase in cost. In summary, the production cost of a quantum dot applied to a display device is high.
  • the main object of the present invention is to provide an LED light source, a light bar and a display device, which aim to reduce the production cost of the display device.
  • the present invention provides an LED light source, a light bar and a display device, wherein the LED light source comprises a bracket, a blue chip and a wavelength conversion portion, and the bracket has a cavity with an opening facing upward;
  • the blue light chip is disposed at a bottom of the cavity;
  • the wavelength conversion portion covers the blue light chip; and
  • the wavelength conversion portion includes a red light quantum dot, a barrier agent, and a green phosphor.
  • the red light quantum dots have a diameter of 1 to 10 nanometers.
  • the wavelength converting portion is formed by staggered doping and mixing of the barrier agent, the red light quantum dot, and the green phosphor.
  • the wavelength converting portion is a multi-layer structure; the wavelength converting portion includes: a first fluorescent layer formed by a green phosphor disposed at a bottom of the cavity, and is coated on the first fluorescent a first barrier layer formed by the barrier agent on the layer, and a first quantum dot layer formed by the red light quantum dots disposed on the first barrier layer, and coated on the first a second barrier layer formed by the barrier agent on the quantum dot layer.
  • the wavelength converting portion further includes a third barrier layer formed by a barrier agent applied between the first quantum dot layer and a sidewall of the bracket.
  • the wavelength conversion portion is a multi-layer structure; the wavelength conversion portion includes: a fourth barrier layer formed by a barrier agent applied to the bottom of the cavity, and is laid on the fourth barrier layer a second quantum dot layer formed by the red light quantum dots, and a fifth barrier layer formed by the barrier agent coated on the second quantum dot layer, and green layered on the fifth barrier layer A second fluorescent layer formed by the photo-phosphor.
  • the wavelength converting portion further comprises a sixth blocking layer formed by a barrier agent applied between the second quantum dot layer and a sidewall of the bracket.
  • the bracket is tapered from the bottom wall thereof.
  • the present invention also provides a light bar, the light bar includes an LED light source, the LED light source includes: a bracket, a blue chip and a wavelength conversion portion, the bracket has a cavity with an opening facing upward; the blue light A chip is disposed at a bottom of the cavity; the wavelength converting portion covers the blue chip; and the wavelength converting portion includes a red light quantum dot, a barrier agent, and a green phosphor.
  • the present invention also provides a display device, the display device includes an LED light source, the LED light source includes: a bracket, a blue chip and a wavelength conversion portion, the bracket has a cavity with an opening upward; the blue light A chip is disposed at a bottom of the cavity; the wavelength converting portion covers the blue chip; and the wavelength converting portion includes a red light quantum dot, a barrier agent, and a green phosphor.
  • the display device is a television, a mobile phone or a computer display.
  • the LED light source of the utility model is used for installing a blue light chip, a gold wire and a conductor of an LED light source, and the gold wire connecting conductor and the blue light chip are turned on, so that the blue light chip is electrically conductive.
  • the electrical conductor may be a copper piece to mount the stent patch on the circuit board; the electrical conductor may also be a conductive pin to allow the bracket to be inserted into the circuit board.
  • the bracket has a cavity with an opening facing upward, and the cavity is used for accommodating the blue chip, the gold wire and the conversion part, so that the light emitted by the blue chip is gathered in the cavity, and the light is emitted upward toward the opening; for protecting the blue chip
  • the blue chip and the gold wire are placed in the cavity and the bracket is integrally packaged in the lamp bead of the LED, and the path of the light in the lamp bead forms an internal optical path.
  • the chip is a blue chip for emitting blue light, wherein the blue light has a peak wavelength of 430 nm to 470 nm.
  • the blue chip is disposed at the bottom of the cavity, and the light emitting surface of the blue chip is disposed upward, so that the blue light is emitted upward.
  • the other side of the blue chip is in contact with the bottom of the cavity, and is electrically connected to the copper piece at the bottom of the bracket through the gold wire to facilitate the installation of the LED light source patch.
  • the wavelength conversion portion covers the blue chip, and the blue light is incident on the wavelength conversion portion.
  • the wavelength conversion portion includes a red light quantum dot for generating laser light, a green light phosphor, and a barrier agent for blocking red light quantum dots, and the barrier agent blocks the erosion of red light quantum dots by water and oxygen.
  • the blue light excites the red light quantum dots and the green light phosphor in the wavelength conversion portion together, so that the red light quantum dots are excited by blue light to generate red light, and the green light phosphor is excited by blue light to generate green light.
  • the red light, the green light and the remaining blue light are mixed in the internal light path to form white light having a wide color gamut, so that white light in the display device does not need to be formed in the external light path of the LED light source.
  • This arrangement can reduce the amount of red light quantum dots and green phosphors, and also reduce the packaging structure such as quantum film or quantum tube, thereby reducing the production cost of the display device.
  • FIG. 1 is a schematic view showing the internal structure of a first embodiment of an LED light source of the present invention
  • FIG. 2 is a schematic view showing the internal structure of a second embodiment of the LED light source of the present invention.
  • FIG. 3 is a schematic view showing the internal structure of a third embodiment of the LED light source of the present invention.
  • FIG. 4 is a schematic view showing the internal structure of a first embodiment of the display device of the present invention.
  • FIG. 5 is a schematic view showing the internal structure of a second embodiment of the display device of the present invention.
  • Label name Label name 1 Light 13 Wavelength conversion unit 3 Diffuser 131 Red light quantum dot 4 First optical film set 1311 First quantum dot layer 5 Second backplane 1312 Second quantum dot layer 6 Middle frame 132 Green phosphor 7 Light guide 1321 First phosphor layer 8 A reflective sheet 1322 Second phosphor layer 9 Second optical film set 133 Barrier 10 LED light source 1331 First barrier layer 11 support 1332 Second barrier layer 110 Opening 1333 Third barrier layer 111 Cavity 1334 Fourth barrier layer 112 Bottom wall 1335 Fifth barrier layer 113 Side wall 1336 Sixth barrier layer 12 Blu-ray chip
  • the directional indication is only used to explain in a certain posture (such as the drawing)
  • a certain posture such as the drawing
  • first”, “second”, etc. in the embodiments of the present invention, the description of “first”, “second”, etc. is used for the purpose of description only, and is not to be understood as an indication or Implied its relative importance or implicitly indicates the number of technical features indicated.
  • features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
  • the technical solutions between the various embodiments may be combined with each other, but must be based on the realization of those skilled in the art, and when the combination of the technical solutions is contradictory or impossible to implement, it should be considered that the combination of the technical solutions does not exist. It is also within the scope of protection required by the present invention.
  • the utility model provides an LED light source, a light bar comprising a plurality of LED light sources, and a display device provided with the light bar.
  • the display device is a television, a mobile phone or a computer display.
  • the solid line with an arrow in the figure indicates a plane or a space such as a face, a cavity, a hole, or the like.
  • the LED light source 10 includes a holder 11, a blue chip 12, and a wavelength conversion portion 13.
  • the bracket 11 is used for mounting the blue chip 12, the gold wire (not shown), the electric conductor (not shown), and the like of the LED light source 10.
  • the electric conductor is connected to the bottom or the outer portion of the bracket 11 and the blue chip 12 and The gold wire is turned on to make the blue chip 12 conductively.
  • the electrical conductor may be a copper sheet, and the bracket 11 is mounted on the circuit board; the electrical conductor may also be a conductive pin, so that the bracket 11 is inserted into the circuit board.
  • the bracket 11 has a cavity 111 with an opening 110 facing upward, and the cavity 111 is for accommodating the blue chip 12 and the gold wire, so that the light emitted by the blue chip 12 is gathered in the cavity 111, and the light is emitted upward toward the opening 110;
  • the blue chip 12 and the gold wire are placed in the cavity 111 and the bracket 11 is integrally enclosed in the lamp bead, and the path of the light in the lamp bead forms an internal optical path.
  • the blue chip 12 is used to emit blue light, wherein the blue light has a peak wavelength between 430 nm and 470 nm.
  • the blue chip 12 is disposed at the bottom of the cavity 111, and the light emitting surface of the blue chip 12 is disposed upward so that the blue light is emitted upward.
  • the other side of the blue chip 12 is in contact with the bottom of the cavity 111 to turn on the blue chip 12 and the copper piece connected outside the bracket 11 to facilitate the mounting of the LED light source 10.
  • the wavelength converting portion 13 covers the blue chip 12, and the blue light is incident on the wavelength converting portion 13.
  • the wavelength converting portion 13 includes a red light quantum dot 131 for generating laser light, a green fluorescent powder 132, and a barrier 133 for blocking the red light quantum dot 131, and the barrier 133 is wrapped around the periphery of the red light quantum dot 131, and the barrier 133
  • One or more red light quantum dots 131 may be wrapped, and the barrier agent 133 blocks the erosion of the red light quantum dots 131 by water and oxygen.
  • the blue light collectively excites the red light quantum dot material 131 and the green fluorescent powder 132 in the wavelength converting portion 13 to cause the red light quantum dot 131 to be excited by blue light to generate red light, so that the green fluorescent powder 132 is excited by blue light to generate green light.
  • the red light, the green light, and the remaining blue light are mixed in the internal light path to form white light having a wide color gamut, so that white light in the display device does not need to be formed in the external light path of the LED light source 10.
  • This arrangement reduces the amount of red light quantum dots 131 and green phosphors 132, and also reduces the packaging structure such as quantum films or quantum tubes, thereby reducing the production cost of the display device.
  • the utility model also provides a light bar.
  • the light bar 1 can be applied to a display device comprising a circuit board 20 and an LED light source 10 mounted on the circuit board 20.
  • a display device comprising a circuit board 20 and an LED light source 10 mounted on the circuit board 20.
  • the display of the LED light source 10 in the display device will be described by taking a display with the LED light source 10 as an example.
  • Products such as a mobile phone, a tablet or a computer display can be referred to, but are not limited to the following embodiments.
  • a display device proposed by the utility model proposes
  • the display device includes a backlight module and a display screen disposed in the front-rear direction, and the backlight module includes the foregoing light bar 1.
  • the backlight module may be a direct-lit backlight module or a side-in-light backlight module, wherein:
  • the backlight module is a direct-lit backlight module
  • the direct-lit backlight module includes a light bar having an LED light source 10, a diffusion plate 3, and a first optical film group 4.
  • the LED light source 10 is fixed on the first backboard (not shown) by a thermal adhesive paste or a screw or a snap.
  • the LED lamp source 10 is provided with a lens for diverging light, which is not shown in the lens diagram.
  • the white light emitted from the LED lamp source 10 is incident on the diffusion plate 3 and diffused by the diffusion plate 3 onto the first optical film group 4.
  • the wavelength conversion portion 13 is disposed in the cavity 111 of the holder 11, so that the wavelength conversion portion 13 encloses the blue chip 12 in a dot-like manner.
  • the structure of the wavelength conversion portion 13 is relative to the prior art. The use of less material reduces the cost of using quantum dots for direct-lit backlight modules.
  • the backlight module is a side-input backlight module
  • the side-in-light backlight module includes a second back plate 5 , a middle frame 6 , a light guide plate 7 , and a reflective sheet.
  • the second optical film group 9 and the foregoing light bar 1 the light guide plate 7 is fixed on the second back plate 5 through the middle frame 6, and the light emitting surface of the light guide plate 7 is disposed opposite to the side of the second back plate 5, The light bar 1 is fixed to the side of the light guide plate 7 through the middle frame 6.
  • the reflection sheet 8 is disposed away from the light-emitting surface side of the light guide plate 7, and the aforementioned LED light source 10 is supplied with incident light to the light guide plate 7, and the incident light is guided to the second optical film group 9 via the light guide plate 7.
  • the LED light source 10 can directly emit a white light incident light guide plate 7 of a wider color gamut.
  • the wavelength conversion portion 13 is disposed in the cavity 111 of the bracket 11. Obviously, compared with the prior art, the wavelength conversion portion of the LED lamp source 10 of the present invention 13 Protected by the support 11, the quantum dot can be prevented from being damaged by the light guide plate 7 when being packaged in the glass tube, thereby reducing the consumable cost of the direct type backlight module.
  • the red light quantum dot 131 excites a red light having a peak wavelength between 600 nm and 680 nm
  • the material may be a first compound composed of a group II-VI element including: aN, GaP.
  • the green phosphor 132 includes a silicate material and an aluminate material to obtain green light corresponding to the green color gamut.
  • the barrier material may be: SiO2, TiO2, Al2O3, CaCO3, BaSO4, polymethyl methacrylate PMMA, polystyrene PS, acrylonitrile-butadiene-styrene copolymer ABS, polyurethane PU, silicone polymer One or more of them to effectively block water oxygen at higher temperatures.
  • the diameter of the red light quantum dot 131 is 1 to 10 nanometers, for example, 3 nanometers, 5 nanometers or 7 nanometers, or 10 nanometers, so that the diameter of the red light quantum dots 131 is sufficiently large. It is convenient to be encapsulated by the barrier agent 133, so as to prevent the red light quantum dot 131 and the barrier agent 133 from being tightly packaged, and the red light quantum dot 131 is oxidized. At the same time, the red light quantum dot 131 can also be more easily wrapped by the barrier 133, wherein when the red light quantum dot 131 is mixed with the barrier 133, the exposed surface of the single or multiple red light quantum dots 131 can be sealed in the barrier 133. In order to better block water oxygen.
  • the red light quantum dots 131 and the green phosphors 132 are disposed in the wavelength conversion portion 13 in various manners, such as a layered arrangement or a staggered doping setting.
  • the wavelength converting portion 13 is formed by staggered doping and mixing of the barrier 133, the red quantum dot 131, and the green phosphor 132, and the red light quantum dot 131 and the blocking agent 133 are first used.
  • the substrate material is formed by mixing in a ratio such that the barrier agent 133 can encapsulate the single or multiple red light quantum dots 131.
  • the mixed base material and the green phosphor 132 are doped, and the particles of the red quantum dot 131 and the green phosphor 132 are uniformly dispersed to obtain a uniform laser light.
  • the structural material of the wavelength converting portion 13 is formed, and the structural material is applied to the cavity 111 by dispensing to form a wavelength converting portion 13 covering the blue chip 12, and then with the blue chip 12 Co-packaged in the lamp bead.
  • the blue light emitted by the blue chip 12 excites the wavelength conversion portion 13 to generate red and green light-receiving laser light, which is mixed with the remaining blue light to form white light, and is incident on the lamp bead upward through the opening 110 of the bracket 11 so that the white light is on the light.
  • the internal light path of the LED light source 10 is formed in the bead, and it is not necessary to form white light outside the LED light source 10.
  • the red light quantum dots 131 and the green phosphors 132 are layered in the wavelength conversion portion 13, and the wavelength conversion portion 13 has a multilayer structure.
  • the wavelength conversion portion 13 includes a first fluorescent layer 1321 formed by the green phosphor 132 laid at the bottom of the cavity 111 for generating green light after being excited. And a first barrier layer 1331 formed by the barrier 133 coated on the first fluorescent layer 1321 for blocking water oxygen from the first fluorescent layer 1321. And a first quantum dot layer 1311 formed by the red light quantum dots 131 laid on the first barrier layer 1331 for generating red light after being excited.
  • the wavelength converting portion 13 and the blue chip 12 are co-packaged in the lamp bead.
  • the blue light emitted by the blue chip 12 excites the first fluorescent layer 1321 and the first quantum dot layer 1311, respectively, and the remaining blue light is first mixed with the green light generated by the first fluorescent layer 1321.
  • Forming mixed light the mixed light is mixed with the red light of the wider color gamut generated by the first quantum dot layer 1311 to form white light, and the light bulb is emitted upward through the opening 110 of the bracket 11 so that the white light forms an LED light source in the lamp bead.
  • the wavelength conversion portion 13 further includes a third barrier layer 1333 formed by the barrier agent 132 coated between the first quantum dot layer 1311 and the sidewall of the bracket 11 for further blocking the inner side of the sidewall. Water oxygen entering the wavelength conversion portion 13.
  • the red light quantum dots 131 and the green phosphors 132 are layered in the wavelength conversion portion 13, so that the wavelength conversion portion 13 has a multilayer structure.
  • the wavelength conversion portion 13 includes a fourth barrier layer 1334 formed by a barrier agent 133 disposed at the bottom of the cavity 111 for blocking water oxygen from the bottom of the cavity 111. And a second quantum dot layer 1312 formed by the red light quantum dots 131 laid on the fourth barrier layer 1334 for generating red light after being excited. And a fifth barrier layer 1335 formed by the barrier agent 133 coated on the second quantum dot layer 1312 for blocking water oxygen from the upper portion of the cavity 111.
  • the second fluorescent layer 1322 formed by the green phosphor 132 laid on the fifth barrier layer 1335 is used to generate green light after being excited.
  • the wavelength converting portion 13 and the blue chip 12 are co-packaged in the lamp bead.
  • the blue light emitted by the blue chip 12 excites the second quantum dot layer 1312 and the second fluorescent layer 1322, respectively, and the remaining blue light is first and the second quantum dot layer 1312 is wider.
  • the red light of the color gamut is mixed to form mixed light, and the mixed light is mixed with the green light generated by the second fluorescent layer 1322 to form white light, and the light bulb is incident upward through the opening 110 of the bracket 11 so that the white light forms an LED light source in the lamp bead.
  • the wavelength converting portion 13 further includes a sixth blocking layer 1336 formed by the barrier 133 applied between the second quantum dot layer 1312 and the sidewall of the bracket 11 for further blocking the inner side along the sidewall Water oxygen entering the wavelength conversion portion 13.
  • the bracket 11 is disposed in a divergent shape from the bottom wall 112 thereof. Specifically, the side wall 113 of the bracket 11 is disposed to be tapered from the peripheral edge of the bottom wall 112 upward.
  • the LED light source 10 When the LED light source 10 is in operation, the blue light emitted by the blue light chip 12 is diverged to the side wall 113 of the bracket 11, reflected by the side wall 113 to the wavelength conversion portion 13 for light mixing, and finally concentrated in the opening 110 of the cavity 111. Above, it diverge from the opening 110.

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Abstract

一种LED灯源（10）、灯条（1）及显示装置，其中，LED灯源（10）包括支架（11）、蓝光芯片（12）及波长转换部（13），支架（11）具有一开口（110）朝上的容腔（111）；蓝光芯片（12）设置在容腔（111）的底部；波长转换部（13）覆盖在蓝光芯片（12）上；波长转换部（13）包括红光量子点（131）、阻隔剂（133）及绿光荧光粉（132）。减少了红光量子点（131）及绿光荧光粉（132）的用量，降低了显示装置的生产成本。

Description

LED灯源、灯条及显示装置
技术领域
本实用新型涉及LED显示领域，特别涉及一种LED灯源、灯条及显示装置。
背景技术
目前，市场上的LED灯源以其轻薄、低能耗等优点，被广泛应用于灯条及显示装置中。常规的LED灯源包括蓝光芯片，蓝光芯片工作时发出蓝光，该蓝光需要通过设置在LED灯源外侧的波长转换部转化成白光，并供给灯条或者显示装置。而由于常规的波长转换部设置在LED灯源的外侧，需要覆盖整个LED灯源，才能将大部分蓝光转换为白光。
由于量子点受激发后可以产生色域较宽的受激光，为了使显示装置的背光源具有较宽的色域。现有背光模组多采用量子管或者量子膜等方式封装量子点，使其置于LED灯源的外部光路中，以获得色域较宽的白光。然而，当采用量子膜方式时，需要使用大量的量子点。当采用量子管方式时，需要通过额外的装置对量子管进行固定，且量子管较容易受冲击或震动而发生破损，导致成本增加。综上，量子点应用于显示装置的生产成本较高。
实用新型内容
本实用新型的主要目的是提出一种LED灯源、灯条及显示装置，旨在降低显示装置的生产成本。
为实现上述目的，本实用新型提出的LED灯源、灯条及显示装置，其中，所述LED灯源包括支架、蓝光芯片及波长转换部，所述支架具有一开口朝上的容腔；所述蓝光芯片设置在所述容腔的底部；所述波长转换部覆盖在所述蓝光芯片上；所述波长转换部包括红光量子点、阻隔剂及绿光荧光粉。
优选地，所述红光量子点的直径为1至10纳米。
优选地，所述波长转换部由所述阻隔剂、所述红光量子点及所述绿光荧光粉交错掺杂混合形成。
优选地，所述波长转换部为多层结构；所述波长转换部包括：铺设在所述容腔底部的绿光荧光粉所形成的第一荧光层，及，涂设于所述第一荧光层上的所述阻隔剂所形成的第一阻隔层，及，铺设在所述第一阻隔层上的所述红光量子点所形成的第一量子点层，及，涂设于所述第一量子点层上的所述阻隔剂所形成的第二阻隔层。
优选地，所述波长转换部还包括涂设于所述第一量子点层与所述支架的侧壁之间的阻隔剂所形成的第三阻隔层。
优选地，所述波长转换部为多层结构；所述波长转换部包括：涂设于所述容腔底部的阻隔剂所形成的第四阻隔层，及，铺设在所述第四阻隔层上的红光量子点所形成的第二量子点层，及，涂设于所述第二量子点层上的阻隔剂所形成的第五阻隔层，及，铺设在所述第五阻隔层上的绿光荧光粉所形成的第二荧光层。
优选地，所述波长转换部还包括涂设于所述第二量子点层与所述支架的侧壁之间的阻隔剂所形成的第六阻隔层。
优选地，所述支架自其底壁往上呈渐扩设置。
本实用新型还提出一种灯条，所述灯条包括LED灯源，所述LED灯源包括：支架、蓝光芯片及波长转换部，所述支架具有一开口朝上的容腔；所述蓝光芯片设置在所述容腔的底部；所述波长转换部覆盖所述蓝光芯片；所述波长转换部包括红光量子点、阻隔剂及绿光荧光粉。
本实用新型还提出一种显示装置，所述显示装置包括LED灯源，所述LED灯源包括：支架、蓝光芯片及波长转换部，所述支架具有一开口朝上的容腔；所述蓝光芯片设置在所述容腔的底部；所述波长转换部覆盖所述蓝光芯片；所述波长转换部包括红光量子点、阻隔剂及绿光荧光粉。
优选地，所述显示装置为电视机、手机或电脑显示器。
本实用新型的LED灯源，支架用于安装LED灯源的蓝光芯片、金线及导电体等，金线连接导电体与蓝光芯片导通，使蓝光芯片导电发光。导电体可以是铜片，使支架贴片安装在电路板上；导电体也可以是导电插脚，使支架插装在电路板上。支架具有一开口朝上的容腔，容腔用于容置蓝光芯片、金线及转换部等，使蓝光芯片发出的光在容腔内聚拢，使光朝开口向上出射；出于保护蓝光芯片和金线的目的，蓝光芯片和金线置于容腔内与该支架整体封装在LED的灯珠内，光在灯珠内的路径形成了内部光路。
本实施例中，芯片为蓝光芯片，用于发出蓝光，其中，该蓝光的峰值波长在430纳米-470纳米。蓝光芯片设置在容腔的底部，蓝光芯片的发光面朝上设置，使蓝光向上出射。蓝光芯片的另一面与容腔的底部接触，通过金线与支架底部的铜片导通，以方便LED灯源贴片安装。
本实施例中，波长转换部覆盖在该蓝光芯片上，使蓝光入射到波长转换部。波长转换部包括用于产生受激光的红光量子点、绿光荧光粉，以及用于阻隔红光量子点的阻隔剂，阻隔剂阻隔水氧对红光量子点的侵蚀。蓝光一并激发波长转换部中的红光量子点及绿光荧光粉，以使红光量子点受蓝光激发产生红光，使绿光荧光粉受蓝光激发产生绿光。该红光、绿光与剩余的蓝光在内部光路中混合形成色域较宽的白光，从而使显示装置中的白光无需在LED灯源的外部光路中形成。这样设置可以减少了红光量子点及绿光荧光粉的用量，也节减了量子膜或量子管等封装结构，降低了显示装置的生产成本。
附图说明
为了更清楚地说明本实用新型实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本实用新型的LED灯源第一实施例的内部结构示意图；
图2为本实用新型的LED灯源第二实施例的内部结构示意图；
图3为本实用新型的LED灯源第三实施例的内部结构示意图；
图4为本实用新型的显示装置的第一实施例的内部结构示意图；
图5为本实用新型的显示装置的第二实施例的内部结构示意图。
附图标号说明：
标号 名称 标号 名称
1 灯条 13 波长转换部
3 扩散板 131 红光量子点
4 第一光学膜片组 1311 第一量子点层
5 第二背板 1312 第二量子点层
6 中框 132 绿光荧光粉
7 导光板 1321 第一荧光层
8 反射片 1322 第二荧光层
9 第二光学膜片组 133 阻隔剂
10 LED灯源 1331 第一阻隔层
11 支架 1332 第二阻隔层
110 开口 1333 第三阻隔层
111 容腔 1334 第四阻隔层
112 底壁 1335 第五阻隔层
113 侧壁 1336 第六阻隔层
12 蓝光芯片
本实用新型目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本实用新型的一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本实用新型保护的范围。
需要说明，若本实用新型实施例中有涉及方向性指示（诸如上、下、左、右、前、后……），则该方向性指示仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，若本实用新型实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本实用新型要求的保护范围之内。
本实用新型提出一种LED灯源，以及包括有多个LED灯源的灯条，以及设置有该灯条的显示装置，比如：显示装置是电视机、手机或者电脑显示器等。
在本实用新型LED灯源的第一实施例中，如图1所示，图中带箭头的实线指示的是面、腔、孔等平面或空间。该LED灯源10包括支架11、蓝光芯片12及波长转换部13。
具体地，支架11用于安装LED灯源10的蓝光芯片12、金线（图未示出）及导电体（图未示出）等，导电体连接在支架11底部或外部与蓝光芯片12及金线导通，使蓝光芯片12导电发光。导电体可以是铜片，使支架11贴装在电路板上；导电体也可以是导电插脚，使支架11插装在电路板上。支架11具有一开口110朝上的容腔111，容腔111用于容置蓝光芯片12和金线，使蓝光芯片12发出的光在容腔111内聚拢，使光朝开口110向上出射；出于保护蓝光芯片12和金线的目的，蓝光芯片12和金线置于容腔111内与该支架11整体封装在灯珠内，光在灯珠内的路径形成了内部光路。
如图1所示，本实施例中，蓝光芯片12用于发出蓝光，其中，该蓝光的峰值波长在430纳米至470纳米之间。蓝光芯片12设置在容腔111的底部，蓝光芯片12的发光面朝上设置，使蓝光向上出射。蓝光芯片12的另一面与容腔111的底部接触，以使蓝光芯片12与连接在支架11外的铜片导通，以方便LED灯源10贴装。
本实施例中，波长转换部13覆盖在该蓝光芯片12上，使蓝光入射到波长转换部13。波长转换部13包括用于产生受激光的红光量子点131、绿光荧光粉132，以及用于阻隔红光量子点131的阻隔剂133，阻隔剂133包裹于红光量子点131的外围，阻隔剂133可以包裹1个或多个红光量子点131，阻隔剂133阻隔水氧对红光量子点131的侵蚀。蓝光一并激发波长转换部13中的红光量子点材料131及绿光荧光粉132，以使红光量子点131受蓝光激发后产生红光，使绿光荧光粉132受蓝光激发后产生绿光。该红光、绿光与剩余的蓝光在内部光路中混合形成色域较宽的白光，从而使显示装置中的白光无需在LED灯源10的外部光路中形成。这样设置既减少了红光量子点131及绿光荧光粉132的用量，也节减了量子膜或量子管等封装结构，降低了显示装置的生产成本。
本实用新型还提出一种灯条。
该灯条1可以应用在显示装置上，该灯条1包括电路板20以及安装于电路板20上的LED灯源10。下面以安装有LED灯源10的显示器为例，说明LED灯源10在显示装置中的应用，手机、平板或者电脑显示器等产品可参照但并不局限于以下的实施例。
本实用新型提出的一种显示装置。
该显示装置包括呈前后向设置的背光模组及显示屏，背光模组包括前述的灯条1，背光模组可以是直下式背光模组，或者侧入光式背光模组，其中：
如图4所示，在第一实施例中，背光模组为直下式背光模组，则直下式背光模组包括具有LED灯源10的灯条，扩散板3及第一光学膜片组4，LED灯源10通过导热胶粘贴或螺钉或卡扣固定在第一背板（未示出）上， LED灯源10上罩设有用以发散光线的透镜，透镜图中未示出。LED灯源10发出的白光入射到扩散板3上，并由扩散板3扩散至第一光学膜片组4上。在本实施例中，波长转换部13设置于支架11的容腔111内，使波长转换部13包裹蓝光芯片12呈点状分布，显然，相对于现有技术而言，波长转换部13的结构材料用量较少，因此可降低量子点应用于直下式背光模组的成本。
如图5所示，在第二实施例中，背光模组为侧入光式背光模组，则侧入光式背光模组包括第二背板5、中框6、导光板7、反射片8、第二光学膜片组9及前述的灯条1，导光板7通过中框6固定在第二背板5上，导光板7的出光面背对第二背板5的一侧设置，灯条1通过中框6固定在导光板7的侧面。反射片8背离导光板7的出光面一侧设置，前述的LED灯源10正对导光板7提供入射光，入射光经导光板7引导至第二光学膜片组9上。LED灯源10可以直接发出较宽色域的白光入射导光板7。如图3和图5所示，本实施例中，波长转换部13设置于支架11的空腔111内，显然，相对现有技术而言，本实用新型的LED灯源10中，波长转换部13受支架11的保护，可避免量子点封装于玻璃管时受到导光板7的挤压而损坏，因此可降低直下式背光模组的耗材成本。
本实施例中，需要特别阐明的是，红光量子点131激发出的红光峰值波长在600纳米至680纳米之间，其材料可以为Ⅱ—Ⅵ族元素组成的第一化合物包括：aN、GaP、GaAs、InN、InP和InAs中的任意一种，或者Ⅱ—Ⅵ族元素组成的第二化合物包括：CdSe、CdTe、MgS、MgSe、MgTe、CaS、CaSe、CaTe、SrS、SrSe、SrTe、BaS、BaSe、BaTe、ZnS、ZnSe、ZnTe和CdS，CdS中的任意一种，或者第三化合物包括：有机及无机杂化钙钛矿(CH3NH3PbX3, X = Cl, Br, I)材料，或者第四化合物包括：全无机钙钛矿铯铅卤量子点（CsPbX3，X=Cl，Br，I），或者第一化合物和/或第二化合物和/或第三化合物和/或第四化合物中的多种包覆形成的核壳结构化合物或者掺杂纳米晶，以获得较宽色域的红光。绿光荧光粉132包括硅酸盐材料和铝酸盐材料，以获得对应绿色色域的绿光。阻隔剂材料可以为：SiO2、TiO2、Al2O3、CaCO3、BaSO4、聚甲基丙烯酸甲酯PMMA、聚苯乙烯PS、烯腈-丁二烯-苯乙烯共聚物ABS、聚氨酯PU、有机硅聚合物中的一种或多种，以在较高温的条件下有效阻隔水氧。
如图1所示，本实施例中，红光量子点131的直径为1至10纳米，例如3纳米、5纳米或7纳米，亦或者是10纳米，使红光量子点131的直径足够大，可便于受阻隔剂133封装，避免红光量子点131与阻隔剂133封装不严密，而导致红光量子点131被氧化。同时，也可以使红光量子点131较容易受到阻隔剂133的包裹，其中，当红光量子点131与阻隔剂133混合时，单个或多个红光量子点131的外露表面可以密封在阻隔剂133中，以较好地阻隔水氧。
红光量子点131与绿光荧光粉132在波长转换部13中的设置方式有多种，如：分层设置或交错掺杂设置。
其中，如图1所示，在第一实施例中，波长转换部13由阻隔剂133、红光量子点131及绿光荧光粉132交错掺杂混合形成，先将红光量子点131和阻隔剂133按一定比例进行混合形成基底材料，以使阻隔剂133可以包裹单个或多个红光量子点131。再使混合后的基底材料与绿光荧光粉132进行掺杂，使红光量子点131与绿光荧光粉132的颗粒均匀散布，以获得均匀的受激光。掺杂混合后形成波长转换部13的结构材料，再将该结构材料通过点胶的方式涂设在容腔111内，以形成覆盖在蓝光芯片12上的波长转换部13，然后与蓝光芯片12共同封装在灯珠内。蓝光芯片12发出的蓝光激发该波长转换部13产生红光和绿光的受激光，受激光与剩余的蓝光混合形成白光，并通过支架11的开口110朝上入射灯珠，以使白光在灯珠内形成LED灯源10的内部光路，无需在LED灯源10的外部形成白光。需要阐明的是，前述的基底材料混合比例和结构材料的混合比例在此均不作具体限定，本领域技术人员可以通过本实用新型实施例及附图，获得相应的技术方案，在此不作赘述。
如图2所示，在第二实施例中，红光量子点131与绿光荧光粉132在波长转换部13内分层设置，使波长转换部13呈多层结构。其中，波长转换部13包括铺设在容腔111底部的绿光荧光粉132所形成的第一荧光层1321，用于受激发后产生绿光。及，涂设于第一荧光层1321上的阻隔剂133所形成的第一阻隔层1331，用于阻隔来自第一荧光层1321的水氧。及，铺设在第一阻隔层1331上的红光量子点131所形成的第一量子点层1311，用于受激发后产生红光。及，涂设于第一量子点层1311上的阻隔剂133所形成的第二阻隔层1332，用于阻隔来自支架11的开口110外的水氧。波长转换部13与蓝光芯片12共同封装在灯珠内，蓝光芯片12发出的蓝光分别激发第一荧光层1321和第一量子点层1311，剩余蓝光先与第一荧光层1321产生的绿光混合形成混合光，混合光与第一量子点层1311产生的较宽色域的红光混合形成白光，并通过支架11的开口110朝上出射灯珠，以使白光在灯珠内形成LED灯源10的内部光路，无需在LED灯源10的外部形成白光。本实施例中，波长转换部13还包括涂设于第一量子点层1311与支架11的侧壁之间的阻隔剂132所形成的第三阻隔层1333，用于进一步阻隔沿侧壁的内侧进入波长转换部13的水氧。
如图3所示，在第三实施例中，红光量子点131与绿光荧光粉132在波长转换部13内分层设置，使波长转换部13呈多层结构。其中，波长转换部13包括铺设在容腔111底部的阻隔剂133所形成的第四阻隔层1334，用于阻隔来自容腔111底部的水氧。及，铺设在第四阻隔层1334上的红光量子点131所形成的第二量子点层1312，用于受激发后产生红光。及，涂设于第二量子点层1312上的阻隔剂133所形成的第五阻隔层1335，用于阻隔来自容腔111上部的水氧。及，铺设在第五阻隔层1335上的绿光荧光粉132所形成的第二荧光层1322，用于受激发后产生绿光。波长转换部13与蓝光芯片12共同封装在灯珠内，蓝光芯片12发出的蓝光分别激发第二量子点层1312和第二荧光层1322，剩余蓝光先与第二量子点层1312产生的较宽色域的红光混合形成混合光，混合光与第二荧光层1322产生的绿光混合形成白光，并通过支架11的开口110朝上入射灯珠，以使白光在灯珠内形成LED灯源10的内部光路，无需在LED灯源10的外部形成白光。本实施例中，波长转换部13还包括涂设于第二量子点层1312与支架11的侧壁之间的阻隔剂133所形成的第六阻隔层1336，用于进一步阻隔沿侧壁的内侧进入波长转换部13的水氧。
进一步地，支架11自其底壁112往上呈渐扩状设置。具体地，支架11的侧壁113自底壁112的周缘朝上呈渐扩状设置。当LED灯源10工作时，蓝光芯片12发出的蓝光，发散到支架11的侧壁113上，经侧壁113反射到波长转换部13上进行混光，并最终汇聚于容腔111的开口110上，自开口110发散出去。
以上所述仅为本实用新型的优选实施例，并非因此限制本实用新型的专利范围，凡是在本实用新型的实用新型构思下，利用本实用新型说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本实用新型的专利保护范围内。

Claims (20)

  1. 一种LED灯源，用于LED显示领域，其特征在于，包括：
    支架，所述支架具有一开口朝上的容腔；
    蓝光芯片，所述蓝光芯片设置在所述容腔的底部；
    波长转换部，所述波长转换部覆盖在所述蓝光芯片上；所述波长转换部包括红光量子点、阻隔剂及绿光荧光粉。
  2. 如权利要求1所述的LED灯源，其特征在于，所述红光量子点的直径为1至10纳米。
  3. 如权利要求1所述的LED灯源，其特征在于，所述波长转换部由所述阻隔剂、所述红光量子点及所述绿光荧光粉交错掺杂混合形成。
  4. 如权利要求1所述的LED灯源，其特征在于，所述波长转换部为多层结构；所述波长转换部包括：
    铺设在所述容腔底部的绿光荧光粉所形成的第一荧光层，及，
    涂设于所述第一荧光层上的所述阻隔剂所形成的第一阻隔层，及，
    铺设在所述第一阻隔层上的所述红光量子点所形成的第一量子点层，及，
    涂设于所述第一量子点层上的所述阻隔剂所形成的第二阻隔层。
  5. 如权利要求4所述的LED灯源，其特征在于，所述波长转换部还包括涂设于所述第一量子点层与所述支架的侧壁之间的阻隔剂所形成的第三阻隔层。
  6. 如权利要求1所述的LED灯源，其特征在于，所述波长转换部为多层结构；所述波长转换部包括：
    涂设于所述容腔底部的阻隔剂所形成的第四阻隔层，及，
    铺设在所述第四阻隔层上的红光量子点所形成的第二量子点层，及，
    涂设于所述第二量子点层上的阻隔剂所形成的第五阻隔层，及，
    铺设在所述第五阻隔层上的绿光荧光粉所形成的第二荧光层。
  7. 如权利要求6所述的LED灯源，其特征在于，所述波长转换部还包括涂设于所述第二量子点层与所述支架的侧壁之间的阻隔剂所形成的第六阻隔层。
  8. 如权利要求1所述的LED灯源，其特征在于，所述支架自其底壁往上呈渐扩设置。
  9. 一种灯条，包括LED灯源，其特征在于，所述LED灯源包括：
    支架，所述支架具有一开口朝上的容腔；
    蓝光芯片，所述蓝光芯片设置在所述容腔的底部；
    波长转换部，所述波长转换部覆盖在所述蓝光芯片上；所述波长转换部包括红光量子点、阻隔剂及绿光荧光粉。
  10. 如权利要求9所述的灯条，其特征在于，所述红光量子点的直径为1至10纳米。
  11. 如权利要求9所述的灯条，其特征在于，所述波长转换部由所述阻隔剂、所述红光量子点及所述绿光荧光粉交错掺杂混合形成。
  12. 如权利要求9所述的灯条，其特征在于，所述波长转换部为多层结构；所述波长转换部包括：
    铺设在所述容腔底部的绿光荧光粉所形成的第一荧光层，及，
    涂设于所述第一荧光层上的所述阻隔剂所形成的第一阻隔层，及，
    铺设在所述第一阻隔层上的所述红光量子点所形成的第一量子点层，及，
    涂设于所述第一量子点层上的所述阻隔剂所形成的第二阻隔层。
  13. 如权利要求12所述的灯条，其特征在于，所述波长转换部还包括涂设于所述第一量子点层与所述支架的侧壁之间的阻隔剂所形成的第三阻隔层。
  14. 如权利要求9所述的灯条，其特征在于，所述波长转换部为多层结构；所述波长转换部包括：
    涂设于所述容腔底部的阻隔剂所形成的第四阻隔层，及，
    铺设在所述第四阻隔层上的红光量子点所形成的第二量子点层，及，
    涂设于所述第二量子点层上的阻隔剂所形成的第五阻隔层，及，
    铺设在所述第五阻隔层上的绿光荧光粉所形成的第二荧光层。
  15. 如权利要求14所述的灯条，其特征在于，所述波长转换部还包括涂设于所述第二量子点层与所述支架的侧壁之间的阻隔剂所形成的第六阻隔层。
  16. 如权利要求9所述的灯条，其特征在于，所述支架自其底壁往上呈渐扩设置。
  17. 一种显示装置，包括灯条，所述灯条包括LED灯源，其特征在于，所述LED灯源包括：
    支架，所述支架具有一开口朝上的容腔；
    蓝光芯片，所述蓝光芯片设置在所述容腔的底部；
    波长转换部，所述波长转换部覆盖在所述蓝光芯片上；所述波长转换部包括红光量子点、阻隔剂及绿光荧光粉。
  18. 如权利要求17所述的显示装置，其特征在于，所述波长转换部为多层结构；所述波长转换部包括：
    铺设在所述容腔底部的绿光荧光粉所形成的第一荧光层，及，
    涂设于所述第一荧光层上的所述阻隔剂所形成的第一阻隔层，及，
    铺设在所述第一阻隔层上的所述红光量子点所形成的第一量子点层，及，
    涂设于所述第一量子点层上的所述阻隔剂所形成的第二阻隔层。
  19. 如权利要求18所述的显示装置，其特征在于，所述波长转换部还包括涂设于所述第一量子点层与所述支架的侧壁之间的阻隔剂所形成的第三阻隔层。
  20. 如权利要求17所述的显示装置，其特征在于，所述波长转换部为多层结构；所述波长转换部包括：
    涂设于所述容腔底部的阻隔剂所形成的第四阻隔层，及，
    铺设在所述第四阻隔层上的红光量子点所形成的第二量子点层，及，
    涂设于所述第二量子点层上的阻隔剂所形成的第五阻隔层，及，
    铺设在所述第五阻隔层上的绿光荧光粉所形成的第二荧光层。
PCT/CN2017/109345 2017-04-19 2017-11-03 Led灯源、灯条及显示装置 Ceased WO2018192208A1 (zh)

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108153056A (zh) * 2018-01-12 2018-06-12 安徽芯瑞达科技股份有限公司 一种高色域直下式背光模组及其制作方法
CN108365077B (zh) * 2018-02-09 2019-08-02 深圳市鹏信捷通科技有限公司 一种高色域背光模组
US11428988B2 (en) * 2018-08-31 2022-08-30 Nanosys, Inc. Increasing color gamut performance and efficiency in quantum dot color conversion layers
CN109143682A (zh) * 2018-09-26 2019-01-04 上海中航光电子有限公司 背光模组和显示装置

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1538534A (zh) * 2003-04-15 2004-10-20 郑荣彬 白光发光装置
US20080080165A1 (en) * 2006-10-02 2008-04-03 Samsung Electro-Mechanics Co. Ltd. Surface light source device using light emitting diodes
CN101834266A (zh) * 2007-01-02 2010-09-15 三星电机株式会社 发光装置、用于液晶显示器背光的光源模块及液晶显示器
CN202521397U (zh) * 2012-02-15 2012-11-07 青岛海信电器股份有限公司 背光模组
CN102779928A (zh) * 2011-04-29 2012-11-14 三星电子株式会社 发白光器件、显示设备和照明设备
CN103090277A (zh) * 2013-01-30 2013-05-08 深圳市华星光电技术有限公司 背光模组及液晶显示装置
CN203404682U (zh) * 2013-08-27 2014-01-22 深圳Tcl新技术有限公司 背光模组和液晶显示装置
US20140145229A1 (en) * 2012-11-26 2014-05-29 Daehyun PARK Light emitting device package
CN104241507A (zh) * 2014-09-18 2014-12-24 晶科电子（广州）有限公司 广色域led发光器件及其背光组件
CN204102939U (zh) * 2014-09-18 2015-01-14 晶科电子（广州）有限公司 一种广色域led发光器件及其背光组件
CN205015587U (zh) * 2015-09-16 2016-02-03 深圳Tcl新技术有限公司 背光模组及液晶显示器
CN105355760A (zh) * 2014-11-11 2016-02-24 易美芯光（北京）科技有限公司 一种广色域显示的led器件
CN106328635A (zh) * 2016-08-18 2017-01-11 武汉保丽量彩科技有限公司 一种广色域的发光器件及其制备方法
CN106981562A (zh) * 2017-03-30 2017-07-25 深圳市华星光电技术有限公司 量子点led封装结构
CN107180908A (zh) * 2017-06-27 2017-09-19 深圳Tcl新技术有限公司 一种led、背光模组及液晶显示装置
CN107275462A (zh) * 2017-06-23 2017-10-20 深圳Tcl新技术有限公司 Led、背光模组以及液晶显示装置

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1538534A (zh) * 2003-04-15 2004-10-20 郑荣彬 白光发光装置
US20080080165A1 (en) * 2006-10-02 2008-04-03 Samsung Electro-Mechanics Co. Ltd. Surface light source device using light emitting diodes
CN101834266A (zh) * 2007-01-02 2010-09-15 三星电机株式会社 发光装置、用于液晶显示器背光的光源模块及液晶显示器
CN102779928A (zh) * 2011-04-29 2012-11-14 三星电子株式会社 发白光器件、显示设备和照明设备
CN202521397U (zh) * 2012-02-15 2012-11-07 青岛海信电器股份有限公司 背光模组
US20140145229A1 (en) * 2012-11-26 2014-05-29 Daehyun PARK Light emitting device package
CN103090277A (zh) * 2013-01-30 2013-05-08 深圳市华星光电技术有限公司 背光模组及液晶显示装置
CN203404682U (zh) * 2013-08-27 2014-01-22 深圳Tcl新技术有限公司 背光模组和液晶显示装置
CN104241507A (zh) * 2014-09-18 2014-12-24 晶科电子（广州）有限公司 广色域led发光器件及其背光组件
CN204102939U (zh) * 2014-09-18 2015-01-14 晶科电子（广州）有限公司 一种广色域led发光器件及其背光组件
CN105355760A (zh) * 2014-11-11 2016-02-24 易美芯光（北京）科技有限公司 一种广色域显示的led器件
CN205015587U (zh) * 2015-09-16 2016-02-03 深圳Tcl新技术有限公司 背光模组及液晶显示器
CN106328635A (zh) * 2016-08-18 2017-01-11 武汉保丽量彩科技有限公司 一种广色域的发光器件及其制备方法
CN106981562A (zh) * 2017-03-30 2017-07-25 深圳市华星光电技术有限公司 量子点led封装结构
CN107275462A (zh) * 2017-06-23 2017-10-20 深圳Tcl新技术有限公司 Led、背光模组以及液晶显示装置
CN107180908A (zh) * 2017-06-27 2017-09-19 深圳Tcl新技术有限公司 一种led、背光模组及液晶显示装置

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