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WO2018182710A1 - Formation de motif de bord pour suppression de mode parasite de résonateur - Google Patents

Formation de motif de bord pour suppression de mode parasite de résonateur Download PDF

Info

Publication number
WO2018182710A1
WO2018182710A1 PCT/US2017/025489 US2017025489W WO2018182710A1 WO 2018182710 A1 WO2018182710 A1 WO 2018182710A1 US 2017025489 W US2017025489 W US 2017025489W WO 2018182710 A1 WO2018182710 A1 WO 2018182710A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric resonator
spacers
piezoelectric
substrate
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2017/025489
Other languages
English (en)
Inventor
Kevin Lin
Edris M. Mohammed
Kimin JUN
Han Wui Then
Marko Radosavljevic
Sansaptak DASGUPTA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to PCT/US2017/025489 priority Critical patent/WO2018182710A1/fr
Publication of WO2018182710A1 publication Critical patent/WO2018182710A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes

Definitions

  • the first surface of the piezoelectric resonator comprises a narrower width, and is closer to the substrate surface, than the second surface of the piezoelectric resonator. In some embodiments, the first surface of the piezoelectric resonator comprises a narrower width, and is further from the substrate surface, than the second surface of the piezoelectric resonator. In some embodiments, the piezoelectric resonator comprises aluminum nitride. In some embodiments, the piezoelectric resonator comprises alternating layers of discrete materials. In some embodiments, the piezoelectric resonator comprises symmetrical tapering steps.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne un appareil qui comprend : un substrat, un résonateur piézoélectrique séparé d'une surface du substrat par une région de vide, une première électrode connectée à une première surface du résonateur piézoélectrique parallèle à la surface du substrat, et une deuxième électrode connectée à une deuxième surface du résonateur piézoélectrique parallèle à la surface du substrat. Les première et deuxième surfaces du résonateur piézoélectrique présentent des largeurs disparates et le résonateur piézoélectrique comprend une pluralité d'étapes coniques sensiblement orthogonales entre les première et deuxième surfaces. L'invention concerne également d'autres modes de réalisation.
PCT/US2017/025489 2017-03-31 2017-03-31 Formation de motif de bord pour suppression de mode parasite de résonateur Ceased WO2018182710A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2017/025489 WO2018182710A1 (fr) 2017-03-31 2017-03-31 Formation de motif de bord pour suppression de mode parasite de résonateur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2017/025489 WO2018182710A1 (fr) 2017-03-31 2017-03-31 Formation de motif de bord pour suppression de mode parasite de résonateur

Publications (1)

Publication Number Publication Date
WO2018182710A1 true WO2018182710A1 (fr) 2018-10-04

Family

ID=63676758

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/025489 Ceased WO2018182710A1 (fr) 2017-03-31 2017-03-31 Formation de motif de bord pour suppression de mode parasite de résonateur

Country Status (1)

Country Link
WO (1) WO2018182710A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030071539A1 (en) * 2001-09-14 2003-04-17 Yasuhiro Kuratani Edge reflection type surface acoustic wave device and manufacturing method for the same
US20080179995A1 (en) * 2005-11-04 2008-07-31 Murata Manufacturing Co., Ltd. Piezoelectric thin-film resonator
KR20140101804A (ko) * 2011-11-15 2014-08-20 퀄컴 인코포레이티드 스퓨리어스-모드 억제 압전 공진기 설계
US20160211827A1 (en) * 2015-01-19 2016-07-21 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, and moving object
US9577603B2 (en) * 2011-09-14 2017-02-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Solidly mounted acoustic resonator having multiple lateral features

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030071539A1 (en) * 2001-09-14 2003-04-17 Yasuhiro Kuratani Edge reflection type surface acoustic wave device and manufacturing method for the same
US20080179995A1 (en) * 2005-11-04 2008-07-31 Murata Manufacturing Co., Ltd. Piezoelectric thin-film resonator
US9577603B2 (en) * 2011-09-14 2017-02-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Solidly mounted acoustic resonator having multiple lateral features
KR20140101804A (ko) * 2011-11-15 2014-08-20 퀄컴 인코포레이티드 스퓨리어스-모드 억제 압전 공진기 설계
US20160211827A1 (en) * 2015-01-19 2016-07-21 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, and moving object

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