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WO2018163721A1 - Support destiné à un dispositif de polissage double face - Google Patents

Support destiné à un dispositif de polissage double face Download PDF

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Publication number
WO2018163721A1
WO2018163721A1 PCT/JP2018/004856 JP2018004856W WO2018163721A1 WO 2018163721 A1 WO2018163721 A1 WO 2018163721A1 JP 2018004856 W JP2018004856 W JP 2018004856W WO 2018163721 A1 WO2018163721 A1 WO 2018163721A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
base material
holding hole
double
carrier base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/004856
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English (en)
Japanese (ja)
Inventor
大地 北爪
佑宜 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017156908A external-priority patent/JP6840639B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of WO2018163721A1 publication Critical patent/WO2018163721A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a carrier for a double-side polishing apparatus used in a double-side polishing apparatus that performs double-side polishing of a wafer.
  • a carrier for a double-side polishing machine having the same number of holding holes as the number of wafers is installed on the surface plate.
  • the wafer is held by the holding holes of the carrier, the wafer is sandwiched from both surfaces by the polishing cloth provided on the upper and lower surface plates, and polishing is performed while supplying the polishing agent to the polishing surface.
  • a carrier base material having a holding hole for holding a wafer is usually made of metal.
  • the carrier for a double-side polishing apparatus has a resin insert material on the inner periphery of the wafer holding hole in order to protect the outer peripheral portion of the wafer from the metal carrier base material.
  • This insert material is formed by fitting or injection molding. Since the insert material is in contact with the outer peripheral portion of the wafer, it is important in making the edge shape of the wafer.
  • the outer periphery of the insert material and the inner periphery of the holding hole of the carrier base material are fitted in a wedge shape and further bonded. It may be fixed with an agent (Patent Document 1).
  • the wedge shape of the outer periphery of the insert material and the inner periphery of the holding hole of the carrier base material periodically exists in large numbers, and distortion may occur during processing of the carrier. Further, when the insert material is fitted, there is a case where the fitting is partially tightened due to processing accuracy, and there is a problem that the stress is locally generated and the carrier hole holding hole periphery is distorted. Further, the distortion of the fitting portion around the holding hole of the carrier base material causes deterioration of the edge shape of the wafer, and also causes a deviation between the carrier base material and the insert material.
  • the polishing cloth is locally deformed, resulting in deterioration of wafer flatness.
  • the deviation between the carrier base material and the insert material can be corrected by polishing until the carrier base material and the insert material have the same height. It cannot be corrected until.
  • this distortion causes deterioration of the edge shape of the wafer.
  • the degree of deterioration of the edge shape changes depending on the magnitude of distortion, there is a problem in that the flatness varies among a set of five carriers.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a carrier for a double-side polishing apparatus in which distortion of a peripheral portion (fitting portion) of a holding hole of a carrier base material is reduced.
  • the present invention provides a carrier base material provided in a double-side polishing apparatus for polishing a wafer on both sides and having a holding hole for holding the wafer during polishing, and the holding hole.
  • a carrier for a double-side polishing apparatus which is disposed along an inner periphery and has an insert material formed with an inner periphery contacting the outer periphery of the wafer, wherein the carrier base material is along the inner periphery of the holding hole
  • the concave-convex portions are periodically formed, the distance between the centers of adjacent concave portions in the concave-convex portions is 10 mm or more and 60 mm or less, and the area of the convex portions in the concave-convex portions in the plane direction of the carrier base material Is larger than the area of the cutout portion of the recess, and the insert material is formed periodically with an uneven portion that can be engaged with the uneven portion formed on the inner periphery of the holding hole.
  • the concave and convex portions formed on the inner periphery of the holding hole of the carrier base material are fitted with the concave and convex portions formed on the outer peripheral portion of the insert material.
  • a carrier for a double-side polishing apparatus is provided.
  • Such a carrier for a double-side polishing apparatus is a carrier for a double-side polishing apparatus in which the distortion of the peripheral part (fitting part) of the holding hole of the carrier base material is reduced.
  • the shape of the cutout portion of the recess formed in the inner periphery of the holding hole of the carrier base material may be any one of a triangle, a rectangle, a trapezoid, a wedge, a keyhole, a U-shape, and a circle. preferable.
  • the uneven portion formed in the inner periphery of the holding hole of the carrier base material has an area of the convex portion in the surface direction of the carrier base material that is four times or more than an area of the notch portion of the concave portion. Preferably there is.
  • the strength of the convex portion formed on the inner periphery of the carrier hole of the carrier base material further increases, so the peripheral part of the carrier base material holding hole (fitting part) This is preferable because it provides a carrier for a double-side polishing apparatus with reduced distortion.
  • the carrier for the double-side polishing apparatus of the present invention can increase the strength of the fitting portion formed on the inner periphery of the holding hole of the carrier base material, and can reduce distortion around the holding hole of the carrier base material. It becomes. Then, by performing double-side polishing of the wafer using such a carrier for a double-side polishing apparatus, it is possible to obtain a wafer with improved edge flatness and reduced flatness variation due to the distortion reducing effect around the holding hole. .
  • FIG. 6 In the measurement results of the strain amount around the holding hole (FIG. 6 (A)), ESFQRange relative value (FIG.
  • the present inventors have found that the interval between the concave portions in the concave and convex portions formed on the inner periphery of the holding hole of the carrier base material (that is, the center of adjacent concave portions).
  • the distance between each other) is increased from 5 mm or more to less than 10 mm to 10 mm or more and 60 mm or less, and the carrier base material is found to be a carrier in which the distortion of the fitting portion with the insert material is reduced. Reached.
  • the present invention is arranged in a double-side polishing apparatus for double-side polishing a wafer, and is arranged along a carrier base material having a holding hole for holding the wafer during polishing and along the inner periphery of the holding hole.
  • a carrier for a double-side polishing apparatus having an insert material formed with an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier base material has a concavo-convex portion periodically along the inner periphery of the holding hole.
  • the distance between the centers of adjacent recesses in the concavo-convex portion is not less than 10 mm and not more than 60 mm, and the area of the ridge in the concavo-convex portion in the surface direction of the carrier base material is a notch portion of the recess.
  • the insert material is formed by periodically forming uneven portions that can be fitted to the uneven portions formed on the inner periphery of the holding hole on the outer periphery, A carrier for a double-side polishing apparatus, wherein the uneven portion formed on the inner periphery of the holding hole of the carrier base material is fitted with the uneven portion formed on the outer periphery of the insert material. I will provide a.
  • FIG. 1 shows an example of a carrier for a double-side polishing apparatus of the present invention.
  • the carrier 1 for a double-side polishing apparatus of the present invention is disposed in a double-side polishing apparatus for double-side polishing a wafer, and includes a carrier base material 3 having a holding hole 2 for holding the wafer during polishing,
  • the insert material 4 is disposed along the inner periphery of the holding hole 2 and has an inner peripheral portion formed in contact with the outer peripheral portion of the wafer.
  • the carrier base material 3 is one in which irregularities 5 are periodically and continuously formed along the inner periphery of the holding hole 2.
  • the distance d between the centers of adjacent concave portions 5a in the concave and convex portion 5 of the carrier base material 3 is 10 mm or more and 60 mm or less
  • the area of the convex portion 5b in the concave and convex portion 5 in the surface direction of the carrier base material 3 is It is characterized by being larger than the area of the cutout portion of the recess 5a.
  • the carrier base material 3 is fitted to the insert material 4.
  • the carrier 1 for a double-side polishing apparatus with reduced joint distortion is obtained.
  • the centers of adjacent concave portions 50 a in the concave and convex portions of the carrier base material 30 are arranged in order to securely fit the insert material 40 and the carrier base material 30.
  • the distance varies depending on the diameter of the wafer, many exist at relatively narrow intervals of 5 mm to less than 10 mm (about 9.6 mm when the diameter is 300 mm).
  • stress is partially concentrated at such a narrow interval, and as shown in FIG. 3, distortion occurs around the holding hole of the carrier base material 30.
  • the area of the convex part 5b in the concave and convex part 5 is larger than the area of the notch part of the concave part 5a, and adjacent concave parts in the concave and convex part 5 of the carrier base material 3
  • the number of the concavo-convex portions 5 can be reduced as compared with the conventional case, and the area of the convex portions 5b on the carrier base material side can be relatively increased.
  • the amount of distortion around the holding hole of the carrier base material 3 can be reduced by making the interval between the fitting portions wide.
  • insert material 4 may be detached from carrier base material 3 during wafer processing or the like, and therefore d is 60 mm or less in the present invention.
  • the distance d between the centers of adjacent recesses 5a in the concavo-convex part 5 of the carrier base material 3 is preferably 14 mm or more and 50 mm or less, more preferably 18 mm or more and 30 mm or less.
  • FIG. 4 (A) and FIG. 4 (B) show the results of analysis in the case where the shape of the notched portion of the concavo-convex part is trapezoidal and circular.
  • the distance d between the centers of adjacent concave portions in the concave and convex portions of the carrier base material is less than 10 mm.
  • the amount of distortion (deformation rate) is significantly larger than in the case of 10 mm or more.
  • the distortion decreases as the distance d between the centers of the adjacent recesses increases.
  • the shape of the cutout portion of the recess 5a formed in the inner periphery of the holding hole 2 of the carrier base material 3 is triangular, rectangular, trapezoidal, wedge-shaped, keyhole-shaped, U It is preferably either a letter shape or a circle. And in any of these shapes, as a result of simulation analysis, the same tendency as described above was found.
  • the area of the convex part 5b in the surface direction of the carrier base material 3 is 4 times or more of the area of the notch part of the recessed part 5a. It is preferable.
  • the strength of the convex portion 5b is further increased, so that the distortion of the peripheral portion (fitting portion) around the holding hole of the carrier base material 3 is further reduced.
  • the insert 4 has an uneven portion 6 composed of a recessed portion 6 a and a protruded portion 6 b that can be engaged with the uneven portion 5 formed on the inner periphery of the holding hole 2 of the carrier base material 3. It is formed periodically in the part.
  • a material of the insert material 4 for example, a hard resin can be used.
  • the carrier 1 for a double-side polishing apparatus of the present invention is fitted with an uneven portion 5 formed on the inner periphery of the holding hole 2 of the carrier base material 3 and an uneven portion 6 formed on the outer periphery of the insert material 4. It is a thing.
  • Such a carrier 1 for a double-side polishing apparatus has less distortion in the peripheral portion (fitting part) of the holding hole of the carrier base material 3, and the wafer 1 is double-sided using such a carrier 1 for double-side polishing apparatus.
  • polishing the edge flatness of the wafer to be processed can be improved and the flatness variation can be reduced due to the distortion reducing effect around the holding hole.
  • Example 1 As a carrier for a double-side polishing apparatus, the shape of the notched portion of the concave portion 5a of the concave and convex portion 5 formed on the inner periphery of the holding hole of the carrier base material 3 is trapezoidal, and the distance d between the centers of the adjacent concave portions 5a is 19.1 mm. In the surface direction, the carrier base material 3 in which the area of the convex part 5b in the concave-convex part 5 is larger than the area of the notch part of the concave part 5a and the insert material 4 are fitted, and double-side polishing as shown in FIG. An apparatus carrier 1 was manufactured. The d (19.1 mm) of Example 1 is about twice the d (9.6 mm) of Comparative Example 1.
  • Example 1 With respect to the carrier for the double-side polishing apparatus of Example 1 and Comparative Example 1 above, the distortion in the range shown in FIG. 5 (around the holding hole of the carrier base material) was confirmed with a three-dimensional measuring machine (manufactured by Tokyo Seimitsu). The measurement results are shown in FIG. The average value of the strain amount was 24.2 ⁇ m in Example 1 and 29.1 ⁇ m in Comparative Example 1. In Example 1, it was confirmed that the distortion around the holding hole was significantly reduced as compared with Comparative Example 1. These results almost coincided with the simulation results shown in FIG.
  • FIG. 6B shows the result of the ESFQRange relative value when Comparative Example 1 is used as a reference
  • FIG. 6C shows the result of the relative value of ESFQRmax.
  • Example 1 the range of ESFQR range was reduced compared to Comparative Example 1, and it was confirmed that the variation in edge flatness was reduced. At the same time, the value of ESFQRmax could be improved.
  • DSP processing was performed on a silicon wafer having a diameter of 300 mm. However, the insert material 40 was detached from the carrier and the DSP processing could not be performed.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un support destiné à un dispositif de polissage double face, le support ayant : un matériau de base de support dans lequel est formé un trou de maintien destiné à maintenir une tranche pendant le polissage; et un matériau d'insert disposé le long de la circonférence interne du trou de maintien. Dans le matériau de base de support, une partie irrégulière est formée périodiquement le long de la circonférence interne du trou de maintien, la distance entre les centres de parties évidements adjacentes les unes aux autres dans la partie irrégulière va de 10 mm à 60 mm, et la zone d'une partie saillante de la partie irrégulière est plus grande que la zone d'une partie encoche de la partie évidement. Dans le matériau d'insert, une partie irrégulière, qui peut être munie de la partie irrégulière formée sur la circonférence interne du trou de maintien, est formée périodiquement sur la circonférence externe du matériau d'insert, et la partie irrégulière formée sur la circonférence interne du trou de maintien du matériau de base de support est munie de la partie irrégulière formée sur la circonférence externe du matériau d'insert. Ainsi, l'invention concerne le support destiné au dispositif de polissage double face, dans lequel une déformation d'une partie périphérique (partie de monture) du trou de maintien dans le matériau de base de support est réduite.
PCT/JP2018/004856 2017-03-06 2018-02-13 Support destiné à un dispositif de polissage double face Ceased WO2018163721A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017041740 2017-03-06
JP2017-041740 2017-03-06
JP2017156908A JP6840639B2 (ja) 2017-03-06 2017-08-15 両面研磨装置用キャリア
JP2017-156908 2017-08-15

Publications (1)

Publication Number Publication Date
WO2018163721A1 true WO2018163721A1 (fr) 2018-09-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/004856 Ceased WO2018163721A1 (fr) 2017-03-06 2018-02-13 Support destiné à un dispositif de polissage double face

Country Status (1)

Country Link
WO (1) WO2018163721A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10329013A (ja) * 1997-05-30 1998-12-15 Shin Etsu Handotai Co Ltd 両面研磨及び両面ラッピング用キャリア
JP2002018708A (ja) * 2000-07-10 2002-01-22 Sumitomo Bakelite Co Ltd 被研磨物保持材及びその製造方法
JP2004122346A (ja) * 2002-10-07 2004-04-22 Daiden Co Ltd 研磨用キャリアプレート
JP2009012086A (ja) * 2007-07-02 2009-01-22 Speedfam Co Ltd ワークキャリア
JP2010280026A (ja) * 2009-06-03 2010-12-16 Fujikoshi Mach Corp 両面研磨装置および両面研磨方法
JP2011067918A (ja) * 2009-09-28 2011-04-07 Shirasaki Seisakusho:Kk 脆性薄板研磨装置用ホルダ、およびその製造方法
JP2013502719A (ja) * 2009-08-21 2013-01-24 エルジー シルトロン インコーポレーテッド 両面研磨装置及びそのためのキャリア

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10329013A (ja) * 1997-05-30 1998-12-15 Shin Etsu Handotai Co Ltd 両面研磨及び両面ラッピング用キャリア
JP2002018708A (ja) * 2000-07-10 2002-01-22 Sumitomo Bakelite Co Ltd 被研磨物保持材及びその製造方法
JP2004122346A (ja) * 2002-10-07 2004-04-22 Daiden Co Ltd 研磨用キャリアプレート
JP2009012086A (ja) * 2007-07-02 2009-01-22 Speedfam Co Ltd ワークキャリア
JP2010280026A (ja) * 2009-06-03 2010-12-16 Fujikoshi Mach Corp 両面研磨装置および両面研磨方法
JP2013502719A (ja) * 2009-08-21 2013-01-24 エルジー シルトロン インコーポレーテッド 両面研磨装置及びそのためのキャリア
JP2011067918A (ja) * 2009-09-28 2011-04-07 Shirasaki Seisakusho:Kk 脆性薄板研磨装置用ホルダ、およびその製造方法

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