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WO2018158194A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2018158194A1
WO2018158194A1 PCT/EP2018/054684 EP2018054684W WO2018158194A1 WO 2018158194 A1 WO2018158194 A1 WO 2018158194A1 EP 2018054684 W EP2018054684 W EP 2018054684W WO 2018158194 A1 WO2018158194 A1 WO 2018158194A1
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WIPO (PCT)
Prior art keywords
layer
substrate
conversion
optoelectronic component
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/054684
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German (de)
English (en)
Inventor
Jörg FRISCHEISEN
Angela Eberhardt
Florian Peskoller
Thomas HUCKENBECK
Michael Schmidberger
Jürgen Bauer
Dominik Eisert
Albert Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US16/479,198 priority Critical patent/US11430922B2/en
Publication of WO2018158194A1 publication Critical patent/WO2018158194A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Definitions

  • the invention relates to an optoelectronic component. Furthermore, the invention relates to a method for producing an optoelectronic component.
  • Optoelectronic components such as
  • LEDs Light emitting diodes
  • Components have a high luminance.
  • Semiconductor layer sequence also has a conversion element.
  • the conversion element is set up by the
  • Semiconductor layer sequence emitted light in particular light having a wavelength from the blue spectral range, in light of another, usually longer, wavelength too
  • the conversion is done by at least one conversion material. For many applications, as much light as possible should escape from a defined emission surface, so that the light can be transmitted via optics to, for example, a
  • the device should have the highest possible luminance
  • conversion elements are often formed in the form of platelets and applied to the semiconductor layer sequence by means of an adhesive.
  • the adhesive is often formed in the form of platelets and applied to the semiconductor layer sequence by means of an adhesive.
  • Conversion element exits but the light exit surface is defined by the surface of the conversion element.
  • Optoelectronic device with a color temperature of, for example, 3200 K it is necessary to combine a combination of a green and red emitting conversion material in the conversion element. So far, however, it has not been possible to provide conversion elements having a high color rendering index (CRI) for warm white light at high current densities of the optoelectronic device, for example, more than 1 A / mm ⁇ , and allow stable operation at the temperatures occurring.
  • CRI color rendering index
  • conversion elements are known, for example, have a matrix material of polymer, such as silicone, in which the conversion material or the conversion materials are embedded.
  • these conversion elements have a low thermal stability.
  • conversion ceramics are known. However, these conversion ceramics are limited in that often only one type of conversion material can be used. A combination of different types of
  • Conversion materials in the conversion ceramics is usually not possible because the conversion ceramics are usually produced at temperatures of more than 1400 ° C and various types of conversion materials, such as garnet and nitride based phosphors, with each other
  • the conventional conversion elements described here have the disadvantage that they must be formed relatively thick in order to ensure a certain mechanical stability for example, subsequent handling. In general, these have a layer thickness of at least 100 ym. This has the disadvantage that the heat dissipation in
  • a further object of the invention is to provide a method for producing an optoelectronic component which produces an optoelectronic component with improved properties.
  • Optoelectronic component on a semiconductor layer sequence has an active region.
  • the active area emits during operation of the
  • optoelectronic component has a conversion element.
  • a conversion element and the
  • the conversion element is cantilevered and arranged in the beam path of the semiconductor layer sequence.
  • the conversion element has a substrate and a first layer.
  • the first layer is arranged in particular following the substrate.
  • the first layer is the
  • Subordinate semiconductor layer sequence wherein the substrate is arranged downstream of the first layer.
  • the substrate may be arranged downstream of the semiconductor layer sequence, wherein the first layer is arranged downstream of the substrate.
  • Layer comprises at least one conversion material embedded in a matrix material.
  • the matrix material is at least one condensed sol-gel material.
  • the sol-gel material is selected from the group consisting of: water glass, metal phosphate, aluminum phosphate, monoaluminum phosphate, modified monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane,
  • the sol-gel material has a proportion of between 10 and 70% by volume in the first layer. In particular, this volume fraction, on the total volume of sol-gel material and conversion material and
  • Substrate is free of the sol-gel material and the
  • the substrate is for mechanical
  • the first layer set up. According to at least one embodiment, the
  • the semiconductor layer sequence is preferably based on a III-V compound semiconductor material.
  • the semiconductor material may preferably be based on a nitride compound semiconductor material.
  • "Based on a nitride compound semiconductor material” in the present context means that the semiconductor layer sequence or at least one layer thereof comprises a III-nitride compound semiconductor material, preferably In x AlyGa ] __ x _yN, where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x + y ⁇ 1.
  • This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may have one or more dopants as well as additional components that the characteristic physical properties of the
  • the above formula contains only the essential constituents of the crystal lattice (In, Al, Ga, N), even if these may be partially replaced by small amounts of other substances.
  • the optoelectronic component includes an active region with at least one pn junction and / or with one or more quantum well structures. During operation of the optoelectronic component, electromagnetic radiation is generated in the active region.
  • a wavelength or a wavelength maximum of the radiation is preferably in the ultraviolet and / or visible range, in particular at wavelengths between 380 nm and 680 nm inclusive, for example between 430 nm and 470 nm inclusive.
  • the optoelectronic component is a light-emitting diode, LED for short, or a laser diode.
  • the device is adapted to emit radiation having a dominant wavelength from the UV, blue, green, yellow, orange, red and / or near IR spectral region.
  • the optoelectronic component is a light-emitting diode, LED for short, or a laser diode.
  • the device is adapted to emit radiation having a dominant wavelength from the UV, blue, green, yellow, orange, red and / or near IR spectral region.
  • the conversion element is adapted to that of the
  • Semiconductor layer sequence emitted radiation at least partially convert into a secondary radiation.
  • the secondary radiation has a different, usually longer, wavelength than the wavelength of the
  • the conversion element is self-supporting.
  • cantilever is here and below referred to that the conversion element carries itself and no further
  • Conversion element can be applied in the so-called pick-and-place process without further support to the semiconductor layer sequence.
  • the substrate may be glass, glass-ceramic, sapphire or a transparent or translucent ceramic.
  • the substrate is glass or sapphire.
  • a glass for example, a
  • Borosilicate glass such as D263, D263T or D263TECO from Schott or, for example, an aluminosilicate glass such as, for example, AS87 eco from Schott.
  • glassy materials, polycrystalline alumina or other transparent or translucent materials may also be used.
  • the substrate should have good stability to moisture, radiation and / or high temperatures. Quality
  • Stability to moisture means that after a humidity test at 85 ° C and 85% relative humidity after 1000 hours, no significant
  • Crystals are located on the surface. The same also applies with respect to stability to radiation (for example, when irradiated with blue light with 3 W / mm 2 for 1000 h) and temperature (for example, 150 ° C for 1000 h).
  • the substrate can be applied by means of an adhesive to the
  • Main radiation exit surface of the semiconductor layer sequence can be applied.
  • the substrate may have further coatings which, for example, to improve stability
  • the substrate is structured.
  • the structuring can be done by means of a laser, by applying microlenses on the surface of the
  • Crystal lattices are generated on the surface.
  • Sapphire substrate with special surface structure are used (PSS, patterned sapphire substrates).
  • the substrate has a coupling-out foil or coupling-out structure.
  • the coupling or decoupling of radiation can be increased and thus the efficiency of the optoelectronic component can be increased.
  • Decoupling structure for shaping the beam of the
  • the substrate has coatings.
  • the coating may, for example, have a scattering layer in order to increase the light extraction.
  • the coating can also be used as encapsulation. The encapsulation should be against environmental influences, such as
  • a phosphor is used as the conversion material, which, for example, has a protective layer on the particles in order to protect it against environmental influences
  • Protecting moisture can be damaged by machining such as sanding or polishing this protective layer. Then, a further protective layer can be applied after production of the conversion material in order to increase the stability.
  • the protective layer can also after a
  • a protective layer are, for example evaporated layers of eg S1O 2 and / or Al 2 O 3 ,
  • layers which are applied by atomic layer deposition ALD, atomic layer deposition
  • polymeric or hybrid polymer layers for example from Ormocer, polysilazane, polysiloxane, silicone, and / or
  • the substrate has functional coatings, such as dichroic coatings, interference coatings, or
  • Anti-reflective coatings on. These coatings may have antireflective properties or filter properties.
  • the substrate may be a dielectric
  • Main radiation exit surface is opposite and reflected back a part of the radiation passed through the substrate in order to achieve a more homogeneous edge emission.
  • the substrate may include dielectric filters that reflect at least a portion of the radiation and thus a
  • the substrate can achieve full conversion.
  • dielectric filters that reflect wavelength selective, for example, preferably a portion of the blue primary radiation while the secondary radiation hardly
  • the changes of the substrate described here can take place individually or else in combination, so that both the substrate side facing the main radiation exit surface and the opposite substrate side can be changed simultaneously or individually.
  • the dichroic coating may be on the first
  • a dichroic coating consists of several thin layers with refractive index differences.
  • the dichroic coating can have two main functions, in particular if it is applied to the substrate side facing the first layer and the substrate is applied to the semiconductor layer sequence: on the one hand, it ensures high transmission of the incoming one
  • the dichroic coating may be on top of the first layer
  • the dichroic coating described above can be any dichroic coating.
  • the substrate has a filter that can selectively absorb wavelengths.
  • the substrate material may be a filter glass, for example a shortpass, longpass or bandpass filter. This can be of advantage especially in an application with
  • Semiconductor layer sequence is applied and the substrate emitted by the semiconductor layer sequence and by the absorbed radiation transmitted so that the light emitted by the component consists almost completely of secondary radiation.
  • the surface treatments of the substrate described herein may be applied to the surface of the substrate
  • the first layer may have a surface facing away from the substrate.
  • the first layer can be structured.
  • the structuring can be carried out with the same method as already described for the substrate.
  • the first layer may be polished, ground, etched and / or coated.
  • the surface of the first layer is smooth. This is advantageous if the first layer by means of an adhesive on the
  • the adhesive layer usually has a low thermal conductivity and thus represents a thermal barrier, in particular for a thick layer, whereby the heat dissipation from the first layer is limited and the
  • Temperature in the first layer is very high, which in turn can lead to a lower efficiency of the conversion materials and thus to a lower luminance of the device due to thermal quenching.
  • the thickness of the first layer is very high, which in turn can lead to a lower efficiency of the conversion materials and thus to a lower luminance of the device due to thermal quenching.
  • Substrate between 50 ym to 200 ym, preferably between 100 to 180 ym. When the substrate is on the
  • Substrate are made very thin and have the highest possible thermal conductivity in order to increase the heat dissipation of the heat generated in the conversion element. But it should also be thick enough so that the conversion element is cantilevered and can be easily handled during manufacture.
  • the first layer has a homogeneous
  • Layer thickness the maximum of 100 ym or of a maximum of 90 ym or a maximum of 80 ym or a maximum of 70 ym, more preferably 60 ym, preferably at most 50 ym or at most 45 ym or at most 40 ym or at most 35 ym or at most 30 ym or maximum 25 ym or maximum 20 ym for partial conversion
  • Full conversion is the maximum layer thickness 200 ym, or a maximum of 180 ym, or a maximum of 150 ym, or a maximum of 130 ym, preferably a maximum of 110 ym or a maximum of 90 ym or a maximum of 80 ym or a maximum of 70 ym or a maximum of 60 ym or a maximum of 50 ym or a maximum of 40 ym, ideally from 30 ym to 150 ym.
  • the layer thickness has a maximum deviation of 20%, or 10%, or 5%, or 3%, or 2% or 0.5% of the average layer thickness.
  • Conversion element on a conversion material is a conversion material.
  • more than one conversion material for example, at least two conversion materials, in the
  • Conversion element be present.
  • at least two different conversion materials are embedded in the matrix material.
  • the conversion material may consist of or comprise inorganic phosphors, for example
  • the conversion material may be capable of
  • the conversion material is capable of partially increasing the radiation of the semiconductor layer sequence
  • the first layer has a layer thickness between 20 ⁇ m and 70 ⁇ m for partial conversion.
  • the first layer has a layer thickness between 30 ym to 150 ym for full conversion.
  • the substrate can be patterned
  • Conversion element and organic conversion materials such as organic dyes, or have quantum dots. There can be more than two conversion materials in the
  • Conversion element be present. This allows a color location or the color rendering index to be optimally adjusted. For example, by combining a green and red conversion material, it is possible to produce warm white mixed light having a high color rendering index.
  • the first layer has a plurality of partial layers.
  • the first layer may be formed such that the first layer has a plurality of conversion materials, which in
  • Conversion materials can be in same or
  • the partial layers can vary in thickness, compactness,
  • the conversion material may be spherically shaped. This can be in the first layer to a high degree of filling
  • Conversion material can be achieved and thus a compact first layer are produced.
  • the conversion element formed thin.
  • the conversion element has a scatter due to the pores and
  • Component ratios can also be adjusted in the production by the choice of suitable process parameters, such as drying, heating, or by the control of moisture or by means of a temperature ramp.
  • the compactness of the first layer can also be influenced by the size and shape of the conversion materials as well as by the ratio between the conversion material and the matrix material.
  • An as compact as possible first layer with the surface as closed as possible is advantageous if the first layer is applied to the semiconductor layer sequence by means of adhesive, so that little adhesive gets into the pores of the first layer.
  • the component can be used for stage lighting, flashlight, in the automotive sector (for example, for headlights, turn signals, brake lights), lamps, displays, endoscope,
  • Conversion element scattering particles or fillers on.
  • the scattering particles or fillers are Conversion element scattering particles or fillers.
  • the scattering particles or the fillers may have a different shape, for example, spherical, rod-shaped or disk-shaped, wherein the particle size can be between a few nanometers to a few tens of micrometers. Smaller particles can be used to reduce the viscosity of the
  • Thickness homogeneity contribute.
  • the scattering can be changed and / or the mechanical stability can be improved. According to at least one embodiment, the
  • An additive may be aerosil or silica, such as sipernate.
  • silica such as sipernate.
  • Conversion element made of several layers, which in layer thickness, compactness, matrix material,
  • Conversion material, scatterers and / or fillers may vary.
  • Matrix material or the conversion element in addition to a chemical hardener.
  • a chemical hardener for example between a temperature of 150 to 350 ° C for water glass, it is possible to produce a conversion element that is very stable to moisture. In particular, this shows
  • the hardener is formed next to possibly arising Alkalicarbonate another by-product. In the case of a phosphate hardener, this would be an alkali phosphate.
  • Monoaluminium phosphate added no chemical hardener.
  • the aluminum phosphate described here, monoaluminum phosphate or modified monoaluminum phosphate preferably has a molar ratio of Al to P of 1: 3 to 1: 1.5 and cures in particular at temperatures between 300 ° C and 400 ° C.
  • other elements or compounds may be included, but preferably max. 1 mole% of alkali and halogen compounds.
  • water glass differs from a conventional glass in particular by its properties, such as porosity.
  • the water glass used for the matrix material may at least be made of lithium water glass,
  • Sodium water glass, potassium water glass or a mixture thereof or have these alkali water glasses have these alkali water glasses.
  • the inventors have recognized that in particular a combination of lithium water glass and potassium water glass has excellent properties for the matrix material.
  • the ratio between lithium water glass and potassium water glass has excellent properties for the matrix material.
  • Potassium water glass between 1: 3 to 3: 1.
  • the ratio between lithium water glass and potassium water glass is 1: 3, 1: 1 or 3: 1, preferably 1: 1.
  • the alkali water glasses may for example have a modulus of 1.5 to 5, preferably a modulus of 2.5 to 4.5.
  • the term module is the molar ratio of 2 to S1O Alkali oxide and known in the art. Therefore, it is not explained in detail here.
  • a matrix material for example, a metal phosphate, such as aluminum phosphate, monoaluminum phosphate or a
  • modified monoaluminum phosphate reagents which, for example, have an oxidizing influence during coating, drying or curing, can be used to form a
  • Conversion material homogeneously distributed in the matrix material may have a concentration gradient, for example, in the direction away from the semiconductor layer sequence an increase in the
  • larger particles may be closer to the substrate and smaller particles may be on the surface of the substrate
  • the backscatter can be reduced.
  • the backscattering of the blue light that is to say the light emitted by the semiconductor layer sequence, can be reduced. This is the proportion of blue radiation, which hits back to the semiconductor layer sequence,
  • Matrix material at least one condensed sol-gel material or consists thereof.
  • Sol-gel materials are referred to herein and hereinafter as those materials made by a sol-gel process.
  • the sol-gel process is a process for the production of
  • Starting materials are also referred to as precursor materials. From them arise in solution in a first basic reaction finest particles.
  • Further processing of the brine can be powder, fibers,
  • the sol-gel material is selected from the following group:
  • Metal phosphate aluminum phosphate, monoaluminum phosphate, modified monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane,
  • Matrix material accounts for 10 to 70% by volume in the first layer. Preferably, the proportion is 15 to 50% by volume, for example 20 to 40% by volume.
  • Optoelectronic devices which preferably emit cold white light, preferably have a sol-gel material in a proportion between 10 and 70% by volume in the first
  • sol-gel material in the first layer of between 20 to 40% by volume.
  • the proportion of sol-gel material depends inter alia on the particle size and the activator content of the
  • Conversion element can be produced a very good moisture stability and thus a stable optoelectronic device can be generated.
  • the substrate is free of the sol-gel material or matrix material. In other words, the substrate has no sol-gel material as
  • Surfaces of the substrate are free of the sol-gel material of the conversion element. For example, that can
  • Conversion element or the first layer, which has the sol-gel material are applied directly to the substrate, in which case there is a direct connection between the substrate and sol-gel material.
  • the substrate serves for mechanical stabilization of the first layer, so that the conversion element is cantilevered.
  • the matrix material is a metal phosphate solution, for example a solution of aluminum phosphate, monoaluminum phosphate
  • the matrix material is a condensed sol-gel material that consists of a
  • Monoaluminum phosphate solution or from a modified monoaluminum phosphate solution are provided.
  • the matrix material is a condensed sol-gel material that has been prepared from a solution of waterglass or a mixture of a solution of several waterglasses and optionally additional hardeners.
  • the cantilevered conversion element by means of an adhesive on the
  • Main radiation exit surface is the area of
  • Semiconductor layer sequence meant, which is arranged perpendicular to the growth direction of the semiconductor layer sequence and facing the conversion element.
  • Main radiation exit surface glued can be done using an inorganic or organic adhesive
  • the adhesive layer should be as thin as possible, For example, be formed with a layer thickness of 500 nm to 15 ym, in particular from 1 ym to 10 ym, ideally from 2 ym to 7 ym.
  • the adhesive is a silicone and the cantilevered conversion element is free of the silicone.
  • Main radiation exit surface arranged wherein the side of the substrate, which is not coated with the first layer, is adhered.
  • the first layer is arranged on the main radiation exit surface by means of an adhesive, and the first layer is disposed directly on the main radiation exit surface
  • Substrate is arranged.
  • the optoelectronic device in operation radiation with a color temperature between 2500 K to 4500 K can be in operation radiation with a color temperature between 2500 K to 4500 K.
  • the color rendering index CRI can be between 70 and 100.
  • optoelectronic component in operation radiation with a color temperature between 4500 K to 8000 K up. additionally can the optoelectronic device a
  • the condensed sol-gel material has a proportion of between 20 and 50% by volume in the first layer.
  • An optoelectronic component which preferably emits warm white light preferably has a proportion of between 20 and 40% by volume. The percentage of volume percent refers here to the total amount of the first layer.
  • Conversion element inorganic In other words, the conversion element has only inorganic constituents and is free of organic materials. For example, the conversion element has no silicone.
  • Conversion element contain several conversion materials to adjust the color location or CRI. By combining, for example, a green and red conversion material, warm white or cool white light, in particular with a high CRI, can be produced. By using two types of conversion material, the emission spectrum can be adjusted accordingly and a desired CRI and R9 value can be obtained.
  • the conversion material has particles that have a
  • Particle size may be crucial to produce a dense package as possible, and thus a compact first Layer with a good thermal conductivity too
  • Sedimentation rate results due to the different particle size, shape and / or density of the conversion material. Such an arrangement can lead to a better heat dissipation, to a reduced heat dissipation
  • they are lateral
  • Main radiation exit surface of the substrate are removed.
  • the removal can take place for example by means of liftoff or by other processes, for example by chemical dissolution or by a mechanical or thermal
  • a sacrificial layer between substrate and first layer may also be used, wherein the sacrificial layer may be chemically, thermally, or is modified by radiation such that removal of the substrate is possible.
  • a substrate having a coefficient of thermal expansion is used such that the conversion element and the substrate undergo little distortion after curing during fabrication
  • the singling can by means of sawing, for example by means of diamond saw, means
  • Expansion coefficient of the substrate is for example 4 * 10 "6 1 / K to 11 * 10 " 6 1 / K, preferably 5 * 10 "6 1 / K to 10 * 10 ⁇ 6 1 / K for a temperature range of 20-300 ° C.
  • Conversion element can be provided a device having a high luminance with a high
  • the inorganic matrix materials described herein have a high thermal conductivity, high temperature stability and high stability to radiation.
  • the first layer can be similarly thin, possibly even thinner formed compared to conventional conversion elements, which have a silicone as a matrix material. This is possible because the matrix material here is a condensed sol-gel material, which typically has a lower viscosity in the
  • Conversion material content can be introduced during manufacture.
  • the condensed sol-gel shrinks Material during manufacture, mainly due to the removal of the solvent, resulting in more compactness.
  • the first layer described here is on a
  • Substrate arranged so as to produce a mechanical stabilization of a cantilevered conversion element. It can be easily used in the pick-and-place process on the
  • Main radiation exit surface of the semiconductor layer sequence can be arranged.
  • the arrangement of the conversion element can be directly on the semiconductor layer sequence. Alternatively, between the conversion element and the
  • Main radiation exit surface further layers or
  • Passivation layer and / or an encapsulation, be arranged.
  • Conversion material in the first layer as close to the main radiation exit surface is arranged and the resulting heat in the first layer well over the
  • Main radiation exit surface can be derived, whereby the efficiency and / or life increases.
  • the substrate may be arranged between the main radiation exit surface and the first layer.
  • the conversion element is over here
  • Main radiation exit surface which is not coated with the first layer.
  • the inorganic conversion element described here can be operated at higher operating currents than conversion elements comprising organic materials.
  • these conversion elements have a higher luminance and higher luminous flux and can have a high
  • the conversion element should be very thin, highly filled with the conversion material and be formed inorganically.
  • the substrate may be transmissive (transparent or translucent). Thus here and below a substrate is referred to, which is an internal
  • Internal transmission here means the transmission without reflection on the surfaces (Fresnel reflection).
  • the adhesive may also be the same material as the matrix materials for the conversion element described herein.
  • the adhesive may be a glass, in particular a low-melting glass, or a polymer.
  • the adhesive may have fillers. According to at least one embodiment, the
  • the optoelectronic components used here have numerous advantages: An optoelectronic component can with a high
  • Heat dissipation can be compared to organic
  • Matrix materials such as silicone, can be used.
  • these optoelectronic components at higher temperatures
  • the invention further relates to a method for producing an optoelectronic component.
  • the optoelectronic component described here is preferably produced by the method.
  • the method comprises the following steps:
  • Step B) optionally smoothing a surface of the first layer facing away from the substrate.
  • Step B) can be carried out, for example, by means of doctoring, screen printing, stencil printing, dispensing, spray coating, spincoating or dip coating.
  • a dispersion here is in particular a homogeneous mixture of at least two
  • the smoothing can be done for example by polishing or grinding.
  • an additional step B5) is performed: singulating the substrate and the first layer to produce a plurality of conversion elements, wherein at least one
  • Conversion element is arranged on the main radiation exit surface. To create a compact first layer, it can be made from
  • the first layer may have several
  • the drying and curing can be between the individual
  • a material for example a polymer, such as silicone or polysilazane, or generally a material that has a low light absorption in the pores can be incorporated into the pores
  • Conversion element can be applied to the pores of the
  • the coating can do that have the same matrix material.
  • the coating may also have a filler.
  • the edges of the conversion element can be coated, for example by means of molding or casting.
  • silicone with titanium dioxide particles for example, be attached to the edges of the conversion element.
  • Further layers may be arranged between the substrate and the first layer, for example protective layers which protect the substrate from a hard conversion material
  • a protective layer may be, for example, aluminum oxide or silicon dioxide.
  • the lateral extent of the conversion element can be
  • the total thickness of the conversion element can be between 30 .mu.m and 2 mm, preferably between 50 .mu.m and 500 .mu.m, particularly preferably between 100 .mu.m and 250 .mu.m.
  • the conversion element may have areas in which recesses are present, for example during the
  • Semiconductor layer sequence to release a bonding pad over which the semiconductor layer sequence is electrically contacted This area can be created later.
  • the generation can be mechanical, for example by sawing or
  • the invention further relates to a conversion element.
  • a conversion element preferably has the optoelectronic described here Component on the conversion element. All designs and definitions for the optoelectronic apply
  • Conversion element cantilevered and optionally in
  • the cantilevered conversion element comprises a substrate and a first layer, wherein the first layer comprises at least one conversion material embedded in a matrix material, the matrix material having at least one condensed sol-gel material selected from the group consisting of water glass, metal phosphate .
  • Material and the conversion material is used for mechanical stabilization of the first layer.
  • FIGS. 1A to 1H each show a schematic side view of an optoelectronic component according to FIG.
  • Figures 2A to 2D each an optoelectronic
  • Figures 3A, 3B, 3D, 3E and 9A to 9E respectively
  • FIGS. 5A to 5F a method for producing an optoelectronic component according to an embodiment
  • FIG Optoelectronic component according to an embodiment Figures 7A to 7H respectively data from robustness tests
  • identical, identical or identically acting elements can each be provided with the same reference numerals.
  • the illustrated elements and their proportions with each other are not to be considered as true to scale. Rather, individual elements such as layers, components, components and areas for exaggerated representability and / or for better understanding can be displayed exaggeratedly large.
  • FIGS. 1A to 1H each show a schematic
  • the optoelectronic component 100 of FIG. 1A has a semiconductor layer sequence 1.
  • the semiconductor layer sequence is a semiconductor layer sequence 1.
  • Then 1 may be, for example, InAlGaN.
  • Semiconductor layer sequence has an active region which emits radiation at least via a main radiation exit surface 11 during operation.
  • the semiconductor layer sequence 1 emits radiation from the blue
  • Main radiation exit surface 11 is a conversion element
  • Conversion element 2 and the semiconductor layer sequence 1 further layers, such as an adhesive layer 3, as shown in Figures 1D to IG, be arranged.
  • the conversion element 2 has a first layer 22, which is arranged on a substrate 21.
  • the arrangement can be direct or indirect. Direct here means that no further layers or elements are arranged between the first layer 22 and the substrate 21 (see FIG. 1B).
  • the first layer 22 may comprise a matrix material 221, that is to say a condensed sol-gel material, for example water glass or metal phosphate.
  • At least one conversion material 222 may be embedded in the matrix material 221.
  • Suitable conversion materials 222 are any materials that are adapted to convert the radiation emitted by the semiconductor layer sequence 1 into radiation having a changed, usually longer, wavelength.
  • the first layer 22 may have a surface 8 facing away from the substrate 21, which is structured.
  • Structuring can be done by polishing, grinding, etching or by a coating.
  • the conversion element 2 can not only have a first layer 22, but the first layer 22 can be formed from further partial layers 4 and 5.
  • the sub-layers 4, 5 can each
  • Conversion materials 222, 224 may be arranged.
  • Conversion materials 222, 224 may be the same or
  • the conversion materials 222, 224 are each embedded in a matrix material 221, 223.
  • the matrix material 221, 223 may be, for example, water glass or metal phosphate.
  • the matrix material 221, 223 of the partial layer 4 and the partial layer 5 may be the same or different.
  • the partial layers 4, 5 can be arranged on the substrate 21.
  • the substrate 21 may be made of glass, glass ceramic, sapphire or transmissive ceramic.
  • FIG. 1D shows that between the
  • an adhesive layer 3 is arranged.
  • Main radiation exit surface 11 (not shown here) and the first layer 22, the substrate 21 may be arranged.
  • the Substrate 21 can therefore be arranged directly downstream of the adhesive layer 3 or the main radiation exit surface 11.
  • Main radiation exit surface 11 (not shown here) and the substrate 21, the first layer 22 may be arranged.
  • the first layer 22 can therefore be arranged directly downstream of the adhesive layer 3 or the main radiation exit surface 11.
  • the figure IG shows the arrangement of the optoelectronic
  • the housing may have a recess in which the optoelectronic component 100 is arranged.
  • the recess may be filled with a potting 6, for example made of silicone or other inorganic potting material.
  • FIG. 1H shows the arrangement of the optoelectronic device
  • the housing may have a recess in which the optoelectronic component 100 is arranged.
  • the recess may be filled with a potting 6, for example made of silicone or other inorganic potting material.
  • a potting 6 for example made of silicone or other inorganic potting material.
  • Embodiment of the figure IG here the potting 6 is filled only to the top of the conversion element.
  • the potting 6 may have, for example, silicone filled with T1O 2 particles here.
  • FIGS. 2A and 2B respectively show
  • Conversion element 2 according to one embodiment.
  • FIG. 2A shows a glass substrate 21 on which a first layer 22 is arranged.
  • the first layer has Roughening on the surface 8, which faces away from the substrate 21 on.
  • this surface 8 is smoothed.
  • the smoothing can be done for example by polishing or grinding. It is thus possible to produce very thin first layers 22, for example with a layer thickness of ⁇ 50 ⁇ m.
  • an optoelectronic component 100 which, as with a silicon matrix, has all color loci and a high color rendering index. Compared to a silicon matrix, however, the device 100 can operate at high operating currents and current densities
  • Component 100 can, as shown in FIGS. 2C and D, also be arranged in the form of a matrix.
  • the lateral extent of the conversion element may, for example, be 1 mm ⁇ 1 mm or approximately 1.3 mm ⁇ 1.5 mm.
  • FIGS. 3A to 3F show the comparison of FIG
  • FIG. 3A shows a scanning electron microscope
  • Aluminum phosphate is, wherein the first layer 22 has no polished surface.
  • FIG. 3B shows the
  • FIG. 3D shows a polished surface of the first layer 22, in which the matrix material 221
  • Aluminum phosphate is, the figure 3E is a cross section of a after gluing onto a semiconductor layer sequence 1, and FIG. 3F shows a polished cyber-scan profilometry. It can be seen that by using a polished surface the particles of the conversion material
  • the layer thickness of the adhesive layer 3 can be reduced from originally 15 .mu.m, ie unpolished, to 5 .mu.m, thus increasing the heat removal, thereby enabling a higher operating current density.
  • FIG. 4 shows the converter temperature T in .degree Semiconductor layer sequence facing away from the conversion element in dependence on the
  • Aluminum phosphate is used as a matrix material, can be produced at high operating currents of 3 A / mm ⁇ .
  • the application of a conversion material on a substrate, in particular glass, allows the use of higher Operating currents and current densities and a higher
  • FIGS. 5A to 5F show a method for producing an optoelectronic component according to FIG.
  • Embodiment In particular, here is one
  • Conversion material 222 is provided and introduced into a liquid sol-gel material 221.
  • a dispersion is produced (see FIG. 5B).
  • This dispersion can be applied to a cleaned substrate 21.
  • the cleaning can be done for example with a solvent or with ultrasound or by a plasma treatment.
  • the volume fraction of the matrix material 221 in the first layer 22 is between 10 and 70% by volume.
  • the mixing for the preparation of the dispersion can be effected by means of homogenization.
  • the dispersion can then, as shown in FIG. 5C, be applied to a substrate, for example glass, by means of doctor blading. Subsequently, a heating, for example, to 350 ° C, take place. The heating can be done for example in an oven. If necessary, then the
  • FIG. 6 shows an area 6-1 of the surface of the
  • Light extraction improved and efficiency can be increased and / or color orthogeneity over the angle can be improved.
  • FIGS. 7A to 7H show different ones, respectively
  • Figures 7A, 7C, 7E and 7G show the
  • Iv denotes the light intensity measured perpendicular to
  • FIGS 7B, 7D, 7F and 7H show the dependence of ⁇ in units of 0.001 and the time t in h.
  • ⁇ denotes the absolute change of the x component of the color locus (in the CIE standard color chart) of the total radiation of the component with respect to the x component at 0 h.
  • matrix material 221 aluminum phosphate is used, as green conversion material 222 LuAG: Ce and as red
  • the substrate 21 is a glass substrate and has a thickness of 170 ⁇ m.
  • the glass is from Schott and has the trade name D263. The tests were done at different temperatures and
  • FIGS. 8A to 8D respectively show conversion elements as comparative examples (FIGS. 8A to 8C) and one
  • Matrix material conventional glass on and that
  • Conversion element of Figure 8D is the conversion element for the device described here with the here
  • Matrix material 221 (g-green, y-yellow, r-red, w-warm white).
  • the device of Figure 8A can not be used at high temperatures because of the silicone because of silicone
  • FIG. 8B The component of FIG. 8B can be used for
  • the color rendering index is limited in these conversion materials.
  • warm white optoelectronic components can be produced here, these are usually likewise limited with regard to the color rendering index.
  • the optoelectronic component according to the invention can overcome all of these disadvantages and has the advantage that, through the use of the inorganic condensed sol-gel material, such as, for example, aluminum phosphate,
  • Conversion materials can be mixed and thus a device with a high luminance and stability can be provided.
  • Example 1 In the following, optoelectronic components are each described according to an embodiment.
  • Example 1
  • Aluminum phosphate 6 warm white Converter with high CRI and R9 A suspension of aluminum phosphate with a warm white phosphor mixture 1 is produced.
  • the suspension may be diluted with distilled water to adjust the viscosity. That's too fluid
  • Mass ratio should hiss 1: 2 and 1: 0.3, in particular between 1: 1.5 and 1: 0.4, ideally, it should be 1: 0.5.
  • the suspension is applied to a substrate 2 , for example by means of a doctor blade.
  • the squeegee gap can be between 10-200 ym, especially between 30-100 ym, and ideally between 40-80 ym.
  • the application speed is typically between 1 - 99 mm / sec. varied.
  • the freshly coated substrate is pre-dried in normal air, in a clean room or in a drying oven.
  • the room temperature and humidity can be between 18-50 ° C and 0-80 g / m 3 , especially between 18-30 ° C and 0-50 g / m 3 and ideally between 19-23 ° C and 0-30 g / m 3 are kept constant.
  • the substrate is typically predried with a
  • Diamond cutter cut into equal parts and baked at temperatures between 150 ° C - 450 ° C for 10 to 120 min.
  • FIGS. 9A and 9B show two exemplary SEM images (top view) of a sample with aluminum phosphate and warm white phosphor mixture.
  • Figure 9c shows an exemplary side view of a sample with aluminum phosphate and warm white
  • Fluorescent mixture. H means high voltage, A working distance and V magnification.
  • the substrates are prepared by a polishing, lapping, grinding or by a combination of
  • FIG. 9D shows an exemplary SEM image of a
  • FIG. 9E shows an exemplary SEM image of a
  • the substrate becomes
  • FIG. 9F shows an illustration of a sawed one
  • the suspension may be supplemented with at least one other phosphor to vary, for example, the CRI, the R9, the emission color or the color temperature.
  • the viscosity can be adjusted by adding distilled water.
  • the solid to liquid mass ratio may be 1: 2 and 1: 0.3, in particular between 1: 1.5 and 1: 0.4, ideally 1: 0.5.
  • the suspension is applied to a substrate 2 , for example by means of a doctor blade.
  • the squeegee gap can be between 10 - 200 ym, in particular between 30 - 100 ym and in the Ideally, be between 40 - 80 ym.
  • Application speed can be between 1 - 99 mm / sec.
  • the freshly coated substrate is exposed to normal air, in a
  • Room temperature and humidity can be between 18 - 50 ° C and 0 - 80 g / m 3 , especially between 18 - 30 ° C and 0
  • Substrate typically cut in equal parts with a diamond cutter and at temperatures between 150 ° C.
  • the substrates may be prepared by a polishing, lapping, grinding process or by a combination of
  • the substrate can be any material.
  • various processes are further refined. After the final surface treatment, the substrate can be any material.
  • 1mm x 1mm converter can be cut.
  • Aluminum phosphate 6 red Converter A suspension of aluminum phosphate with a nitridic phosphor 4 is prepared.
  • the suspension may be supplemented with at least one other phosphor to vary, for example, the CRI, the R9, the emission color or the color temperature.
  • the CRI the CRI
  • the R9 the emission color
  • the color temperature the CRI
  • Viscosity be adjusted by adding distilled water.
  • the solid to liquid mass ratio can hiss 1: 2 and 1: 0.3, in particular between 1: 1.5 and 1: 0.4, im
  • Ideal case 1 0.5, amount.
  • the suspension will for example, applied by means of a doctor blade on a substrate 2 .
  • the squeegee gap can be between 10 - 200 ym, in particular between 30 - 100 ym and ideally between 30 - 70 ym.
  • the application speed can typically be between 1 - 99 mm / sec. To be varied. After this
  • the freshly coated substrate is pre-dried in normal air, in a clean room or in a drying oven.
  • the room temperature and humidity can be between 18-50 ° C and 0-80 g / m 3 , especially between 18-30 ° C and 0-50 g / m 3 and ideally between 19-23 ° C and 0-30 g / m 3 are kept constant.
  • the substrate can typically be predried with a
  • the substrates may be prepared by a polishing, lapping, grinding process or by a combination of
  • the substrate can be any material.
  • various processes are further refined. After the final surface treatment, the substrate can be any material.
  • the suspension may be supplemented with at least one other phosphor or conversion material to vary, for example, the CRI, the emission color or the color temperature.
  • the viscosity can be increased by adding adjusted to distilled water.
  • the solid to liquid mass ratio may be 1: 2 and 1: 0.3, in particular between 1: 1.5 and 1: 0.4, ideally 1: 0.5.
  • the suspension is, for example by means of a squeegee on a
  • the squeegee gap can be between 10-200 ym, especially between 30-100 ym, and ideally between 40-80 ym.
  • the application speed can typically be between 1 - 99 mm / sec. be varied.
  • Drying oven pre-dried. The room temperature and
  • Humidity can be between 18 - 50 ° C and 0 - 80 g / m 3 , in particular hiss 18 - 30 ° C and 0 - 50 g / m 3 and ideally hiss 19 - 23 ° C and 0 - 30 g / m 3 constant
  • the substrate can typically be cut into equal parts with a diamond cutter and baked at temperatures between 150 ° C - 450 ° C for 10 to 120 minutes.
  • the substrates may be prepared by a polishing, lapping, grinding process or by a combination of
  • the substrate can be any material.
  • various processes are further refined. After the final surface treatment, the substrate can be any material.
  • 1mm x 1mm converter can be cut.
  • divalent metals such as in particular Sr and / or Ca, for example Sr (Sr, Ca) Si 2 Al 2 6 : Eu
  • the suspension is made in a speed mixer or ball mill alternative supratrate materials
  • Precoated substrates e.g. Glass substrate with
  • Chemical compositions of a nitridic phosphor "258": M2 (Al, Si) 5 (, 0) 8-type phosphor doped with Eu (M Ca, Sr, Ba) or phosphor derived therefrom, for example, (Sr, Ba, Ca, Mg) 2 Si 5 N 8 : Eu

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Abstract

L'invention concerne un composant optoélectronique (100) comprenant une succession de couches semi-conductrices (1) présentant une zone active qui émet un rayonnement au moins par l'intermédiaire d'une surface de sortie de rayonnement principale (11) lorsqu'elle est en fonctionnement, un élément de conversion autoportant (2) qui est placé dans le trajet optique de la succession de couches semi-conductrices (1), l'élément de conversion autoportant (2) comprenant un substrat (21) et comprenant une première couche (22) à la suite de celui-ci, la première couche (22) comprenant au moins un matériau de conversion (222) qui est incorporé dans un matériau de matrice (221), le matériau de matrice (221) comprenant au moins un matériau sol-gel inorganique condensé, la proportion de matériau sol-gel condensé dans la première couche (22) étant comprise entre 10 et 70 % en volume, le substrat (21) étant exempt du matériau sol-gel et du matériau de conversion (222) et servant à la stabilisation mécanique de la première couche (22).
PCT/EP2018/054684 2017-02-28 2018-02-26 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Ceased WO2018158194A1 (fr)

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