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WO2018155562A1 - Élément d'inversion de magnétisation, élément magnétorésistif et dispositif de mémoire - Google Patents

Élément d'inversion de magnétisation, élément magnétorésistif et dispositif de mémoire Download PDF

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Publication number
WO2018155562A1
WO2018155562A1 PCT/JP2018/006480 JP2018006480W WO2018155562A1 WO 2018155562 A1 WO2018155562 A1 WO 2018155562A1 JP 2018006480 W JP2018006480 W JP 2018006480W WO 2018155562 A1 WO2018155562 A1 WO 2018155562A1
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Prior art keywords
metal layer
ferromagnetic metal
magnetization
spin
layer
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PCT/JP2018/006480
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English (en)
Japanese (ja)
Inventor
亨 及川
智生 佐々木
陽平 塩川
竜雄 柴田
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TDK Corp
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TDK Corp
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Priority to US16/069,347 priority Critical patent/US11107615B2/en
Priority to CN201880000876.2A priority patent/CN108738371B/zh
Publication of WO2018155562A1 publication Critical patent/WO2018155562A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Definitions

  • the present invention relates to a magnetization switching element, a magnetoresistive effect element, and a memory device.
  • Giant magnetoresistive (GMR) elements composed of a multilayer film of a ferromagnetic layer and a nonmagnetic layer, and tunnel magnetoresistive (TMR) elements using an insulating layer (tunnel barrier layer, barrier layer) as the nonmagnetic layer are known. ing. These elements are used in magnetic sensors, high-frequency components, magnetic heads, nonvolatile random access memories (MRAM), and the like.
  • MRAM magnetic resonance fingerprinting
  • STT spin transfer torque
  • Patent Document 1 describes that the damping constant is 0.01 or less. It is known that the critical write current density using STT is proportional to the damping constant of the ferromagnetic metal layer, and it is preferable to use a material having a low damping constant from the viewpoint of energy saving, high durability, and high integration. In recent years, Mn—Ga and Mn—Ge alloys are expected as materials having a low damping constant. However, when the damping constant of the ferromagnetic metal layer is low, there is a possibility of erroneous writing due to the read current, and the problem of lowering the reliability as a device arises at the same time.
  • Damping constant is a physical quantity originating from spin orbit interaction. Therefore, the damping constant has a close relationship with the magnetic anisotropy energy. Generally, when the damping constant is reduced, the magnetic anisotropy energy is also reduced. When the magnetic anisotropy energy is reduced, the magnetization of the ferromagnetic metal layer is easily reversed, and data reading / writing is facilitated.
  • Non-Patent Document 1 describes that the damping constant of a Co—Fe alloy, which is a material generally used in magnetoresistive elements, is less than 0.01. The same applies to a Co—Fe—B alloy produced by sputtering.
  • the Co—Fe—B alloy has a damping constant of 0.01 or more only in the case of a structure other than the BCC structure where high output characteristics cannot be obtained. Therefore, a ferromagnetic material having a damping constant of less than 0.01 is used for the magnetoresistive effect element using STT.
  • Non-Patent Document 2 a pure spin current generated by spin-orbit interaction as a means for reducing reversal current.
  • Pure spin current generated by spin-orbit interaction induces spin-orbit torque (SOT).
  • SOT spin-orbit torque
  • a pure spin current is generated by the same number of upward spin electrons and downward spin electrons flowing in opposite directions, and the charge flow is canceled out. Therefore, the current flowing through the magnetoresistive effect element is zero, and the lifetime of the magnetoresistive effect element is expected to be extended.
  • the magnetization reversal element using SOT differs from the magnetization reversal element using STT in the mechanism of magnetization reversal. For this reason, an adequate configuration for driving a magnetization reversal element using SOT is not sufficiently known.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a magnetization reversal element capable of quickly performing magnetization reversal.
  • magnetization reversal can be performed quickly by increasing the damping constant of the ferromagnetic metal layer. That is, this invention provides the following means in order to solve the said subject. The following means are common in the technical idea of increasing the damping constant.
  • a magnetization reversal element extends in a first direction intersecting with a ferromagnetic metal layer and a stacking direction of the ferromagnetic metal layer, and the ferromagnetic metal layer is formed on one surface thereof.
  • the damping constant of the ferromagnetic metal layer is greater than 0.01.
  • the magnetization reversal element includes a ferromagnetic metal layer and a spin orbit torque that extends in a first direction intersecting with the lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer. And a direction of spin injected from the spin orbit torque wiring into the ferromagnetic metal layer intersects with a magnetization direction of the ferromagnetic metal layer, and the damping of the ferromagnetic metal layer
  • the constant may be greater than 0.01.
  • the magnetization reversal element according to the second aspect extends in a first direction intersecting with a ferromagnetic metal layer and a stacking direction of the ferromagnetic metal layer, and the ferromagnetic metal layer is formed on one surface thereof.
  • the ferromagnetic metal layer includes a Co and Pt multilayer film, a Co—Ni alloy, (Co x Fe 1-x ) 1-y B y (x> 0.75, y> 0.20), and a rare earth element.
  • the magnetization reversal element according to the second aspect includes a ferromagnetic metal layer and a spin that extends in a first direction intersecting with the lamination direction of the ferromagnetic metal layer and is bonded to the ferromagnetic metal layer.
  • One or more substances selected from the group consisting of Fe—Co—N alloys may be included.
  • a magnetization reversal element extends in a first direction intersecting with a ferromagnetic metal layer and a stacking direction of the ferromagnetic metal layer, and the ferromagnetic metal layer is formed on one surface thereof.
  • the spin direction intersects the magnetization direction of the ferromagnetic metal layer, and the insertion layer includes a heavy metal having a melting point of 2000 degrees or more or an alloy containing the heavy metal, and the film thickness is an atomic radius. 2 times or less.
  • a magnetization reversal element includes a ferromagnetic metal layer and a spin orbit torque that extends in a first direction intersecting the lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer. And an insertion layer provided between the ferromagnetic metal layer and the spin orbit torque wiring, and the direction of spin injected from the spin orbit torque wiring into the ferromagnetic metal layer is the strong.
  • the magnetic metal layer may intersect with the magnetization direction, and the insertion layer may include an alloy including a rare earth element, and the film thickness may be not more than twice the atomic radius.
  • the direction of spin injected from the spin orbit torque wiring into the ferromagnetic metal layer is 45 ° or more and 90 ° or less with respect to the magnetization direction of the ferromagnetic metal layer. It may be tilted.
  • the ferromagnetic metal layer may have a thickness of 4 nm or less.
  • a magnetoresistive effect element includes a magnetization reversal element according to the aspect described above, a nonmagnetic layer sequentially laminated on a surface of the ferromagnetic metal layer opposite to the spin orbit torque wiring, And a second ferromagnetic metal layer.
  • a memory device includes the magnetoresistive effect element according to the above aspect.
  • the magnetization reversal element According to the magnetization reversal element according to the above aspect, the magnetization reversal can be performed quickly.
  • FIG. 1 It is the perspective view which showed typically the magnetization switching element which concerns on 1st Embodiment. It is a schematic diagram for demonstrating a spin Hall effect. It is the perspective view which showed typically the magnetization inversion element with which the direction of the spin injected into a ferromagnetic metal layer and the direction of magnetization of a ferromagnetic metal layer are parallel. It is a cross-sectional schematic diagram of the magnetoresistive effect element which performs magnetization reversal using STT. It is the perspective view which showed typically the magnetization reversal element concerning 3rd Embodiment. It is the perspective view which showed typically the magnetoresistive effect element concerning 4th Embodiment. It is a schematic diagram of the calculation model used for simulation. FIG.
  • FIG. 3 is a diagram showing the strength of magnetization of a ferromagnetic metal layer of Example 1.
  • FIG. 5 is a diagram showing the relationship between applied magnetization and time required for magnetization reversal when the magnetization of the ferromagnetic metal layers of Examples 1 to 3 is reversed.
  • FIG. 7 is a diagram showing the relationship between applied magnetization and time required for magnetization reversal when reversing the magnetization of the ferromagnetic metal layers of Examples 4 to 6.
  • FIG. 10 is a diagram showing the behavior of magnetization in Example 7.
  • FIG. 9 is a diagram showing the behavior of magnetization in Example 8.
  • FIG. 10 is a diagram showing the behavior of magnetization in Example 9. It is the figure which showed the behavior of the magnetization of Example 10.
  • FIG. FIG. 10 is a diagram showing the behavior of magnetization in Example 11.
  • FIG. 1 is a perspective view schematically showing a magnetization switching element according to the first embodiment.
  • the magnetization switching element 100 according to the first embodiment includes a ferromagnetic metal layer 10 and a spin orbit torque wiring 20.
  • the lamination direction of the ferromagnetic metal layer 10 is the z direction
  • the first direction in which the spin orbit torque wiring 20 extends is the second direction orthogonal to the x direction, the z direction, and the x direction. Is the y direction.
  • the x direction is orthogonal to the z direction.
  • the lamination direction of the ferromagnetic metal layer 10 means the lamination direction of the ferromagnetic metal layer 10 and the spin orbit torque wiring.
  • Ferromagnetic metal layer 10 is a ferromagnetic material magnetized M 10 is oriented in a predetermined direction.
  • the direction of magnetization M 10 can be in either direction. The magnetization direction changes when an external force or the like is applied.
  • the laminated surface of the ferromagnetic metal layer 10 is a surface orthogonal to the laminated direction of the ferromagnetic metal layer 10.
  • the damping constant of the ferromagnetic metal layer 10 is greater than 0.01.
  • the damping constant of the ferromagnetic metal layer 10 is larger than 0.01, preferably 0.015 or more, more preferably 0.02 or more, further preferably 0.03 or more, and It is especially preferable that it is 05 or more.
  • the damping constant is a constant affected by the magnitude of the spin orbit interaction. NiFe or the like has a damping constant of around 0.01, but has a very small coercive force. Therefore, noise and rewriting are easily caused by the external magnetic field and the current flowing in the integrated circuit.
  • a material having a damping constant of 0.02 or more generally has a sufficient coercive force, and such noise and rewriting hardly occur and stable operation can be realized. Further, since the damping constant is large, the magnetization reversal of the ferromagnetic metal layer 10 can be performed quickly. The detailed reason why the magnetization reversal can be performed quickly will be described later.
  • the damping constant varies depending on various parameters such as the type of material constituting the ferromagnetic metal layer 10, crystallinity, the thickness of the ferromagnetic metal layer 10, and the measurement method.
  • the damping constant in the present embodiment is a damping constant obtained by the following procedure.
  • a target magnetic film is formed on a substrate having an insulating layer with a sufficient thickness on the surface.
  • the magnetic film is selected between 2 nm and 20 nm according to the actual use conditions.
  • a 100 nm oxide film is formed in order to prevent the magnetic layer from being oxidized.
  • silica, aluminum oxide, magnesium oxide, or the like can be used for the oxide film.
  • After applying a resist it is exposed by photolithography and developed to form an element shape.
  • the element shape is a cylindrical shape having a diameter of 40 nm to 100 nm in accordance with actual use conditions.
  • the oxide film and the magnetic film were etched using an ion beam, and the side wall of the shaved magnetic layer was protected with the oxide film.
  • the oxide film was formed with a thickness of 50 nm.
  • a short-circuit type coplanar line is formed by photolithography.
  • the line width and length of the central conductor of the coplanar line are 1 ⁇ m and 100 ⁇ m, respectively.
  • a microwave magnetic field generated by a coplanar line contributes to ferromagnetic resonance (FMR). Therefore, in the magnetic film processed into a cylindrical shape, a portion of 100 ⁇ 1 ⁇ m 2 directly under the central conductor of the coplanar line contributes to ferromagnetic resonance.
  • the element is placed on an electromagnet that generates a magnetic field in the direction of the easy axis of the magnetic film, and is connected to a microwave generator and a vector network analyzer using a coplanar microprobe.
  • the S11 parameter (reflection coefficient) of the coplanar line is measured using a network analyzer, and the microwave absorption spectrum by FMR of the magnetic film is observed.
  • the film thickness of the ferromagnetic metal layer 10 is preferably 4 nm or less. As described above, the damping constant is also affected by the film thickness of the ferromagnetic metal layer 10. As the thickness of the ferromagnetic metal layer 10 decreases, the damping constant tends to increase. This is presumably because the magnetization in the ferromagnetic metal layer 10 is strongly influenced by the laminated interface due to the thin film thickness of the ferromagnetic metal layer 10.
  • the lower limit of the film thickness of the ferromagnetic metal layer 10 is not particularly limited, but is preferably 0.5 nm.
  • the spin orbit torque wiring 20 extends in the x direction.
  • the spin orbit torque wiring 20 is connected to one surface perpendicular to the z direction of the ferromagnetic metal layer 10 (directly bonded).
  • the spin orbit torque wiring 20 is made of a material that generates a pure spin current by a spin Hall effect when a current flows. Any material that can generate a pure spin current in the spin orbit torque wiring 20 is sufficient as such a material.
  • the material constituting the spin orbit torque wiring 20 is not limited to a material composed of a single element, and includes a portion composed of a material that generates a pure spin current and a portion composed of a material that does not generate a pure spin current. The thing etc. may be sufficient.
  • the spin Hall effect is a phenomenon in which a pure spin current is induced in a direction orthogonal to the direction of the current based on the spin-orbit interaction when a current is passed through the material.
  • FIG. 2 is a schematic diagram for explaining the spin Hall effect.
  • FIG. 2 is a cross-sectional view of the spin orbit torque wiring 20 shown in FIG. 1 cut along the x direction (that is, in the xz plane). A mechanism by which a pure spin current is generated by the spin Hall effect will be described with reference to FIG.
  • the first spin S1 oriented on the back side of the paper and the second spin S2 oriented on the front side of the paper are orthogonal to the current, respectively. Bent in the direction.
  • the normal Hall effect and the spin Hall effect are common in that the moving (moving) charge (electrons) can bend in the moving (moving) direction, but the normal Hall effect is the charged particle moving in the magnetic field.
  • the direction of motion is bent, but the spin Hall effect is greatly different in that the direction of movement is bent only by the movement of electrons (only the current flows) even though there is no magnetic field.
  • the number of electrons of the first spin S1 and the number of electrons of the second spin S2 are equal in a non-magnetic material (a material that is not a ferromagnetic material), the number of electrons in the first spin S1 going upward in the figure and the downward direction The number of electrons of the second spin S2 heading is equal. Therefore, the current as a net flow of charge is zero.
  • This spin current without current is particularly called a pure spin current.
  • the material of the spin orbit torque wiring 20 does not include a material made only of a ferromagnetic material.
  • the electron flow of the first spin S1 is J ⁇
  • the electron flow of the second spin S2 is J ⁇
  • the spin current is JS
  • J S is an electron flow having a polarizability of 100%.
  • the spin orbit torque wiring 20 may include a nonmagnetic heavy metal.
  • the heavy metal is used to mean a metal having a specific gravity equal to or higher than yttrium.
  • the spin orbit torque wiring 20 may be made of only nonmagnetic heavy metal.
  • the non-magnetic heavy metal is preferably a non-magnetic metal having an atomic number of 39 or more having d electrons or f electrons in the outermost shell. This is because such a nonmagnetic metal has a large spin-orbit interaction that causes a spin Hall effect.
  • the spin orbit torque wiring 20 may be made of only a nonmagnetic metal having an atomic number of 39 or more having d electrons or f electrons in the outermost shell.
  • the spin orbit torque wiring 20 may include a magnetic metal.
  • the magnetic metal refers to a ferromagnetic metal or an antiferromagnetic metal. This is because if a non-magnetic metal contains a small amount of magnetic metal, the spin-orbit interaction is enhanced and the spin current generation efficiency for the current flowing through the spin-orbit torque wiring 20 can be increased.
  • the spin orbit torque wiring 20 may be made of only an antiferromagnetic metal.
  • the spin-orbit interaction occurs due to the intrinsic internal field of the material of the spin-orbit torque wiring material (by magnetic action), a pure spin current is generated even in a non-magnetic material.
  • the spin current generation efficiency is improved because the electron spin that flows through the magnetic metal itself is scattered.
  • the added amount of the magnetic metal is increased too much, the generated pure spin current is scattered by the added magnetic metal, and as a result, the effect of reducing the spin current becomes stronger. Therefore, it is preferable that the molar ratio of the magnetic metal added is sufficiently smaller than the molar ratio of the main component of the pure spin generation part in the spin orbit torque wiring.
  • the molar ratio of the magnetic metal added is preferably 3% or less.
  • the spin orbit torque wiring 20 may include a topological insulator.
  • the spin orbit torque wiring 20 may be composed only of a topological insulator.
  • a topological insulator is a substance in which the inside of the substance is an insulator or a high-resistance substance, but a spin-polarized metal state is generated on the surface thereof. Substances have something like an internal magnetic field called spin-orbit interaction. Therefore, even without an external magnetic field, a new topological phase appears due to the effect of spin-orbit interaction. This is a topological insulator, and a pure spin current can be generated with high efficiency by strong spin-orbit interaction and breaking inversion symmetry at the edge.
  • topological insulator for example, SnTe, Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 , TlBiSe 2 , Bi 2 Te 3 , (Bi 1-x Sb x ) 2 Te 3 are preferable. These topological insulators can generate a spin current with high efficiency.
  • the magnetization reversal element 100 may have components other than the ferromagnetic metal layer 10 and the spin orbit torque wiring 20.
  • you may have a board
  • the substrate is preferably excellent in flatness, and for example, Si, AlTiC, or the like can be used as a material.
  • the direction of the injected spin S 20 intersects the direction of the magnetization M 10 of the ferromagnetic metal layer 10. And orientation of the spin S 20 to be injected, the behavior of the magnetization reversal of the magnetization M 10 by the relationship between the direction of the magnetization M 10 of the ferromagnetic metal layer 10 is different.
  • FIG. 3 is a perspective view schematically showing a magnetization reversal element 101 in which the direction of spin injected into the ferromagnetic metal layer and the direction of magnetization of the ferromagnetic metal layer are parallel.
  • the ferromagnetic metal layer 11 shown in FIG. 3, the magnetization M 11 are oriented in the + y direction of the xy plane direction.
  • the direction of the spin S 20 injected from the spin orbit torque wiring 20 into the ferromagnetic metal layer 11 is oriented in the ⁇ y direction.
  • the spin S 20 When the spin S 20 is injected into the ferromagnetic metal layer 11, the spin S 20 gives a torque for rotating the magnetization M 11 in the ⁇ y direction. On the other hand, the magnetization M 11, consuming and damping torque to be stay in the + y direction.
  • the magnetization M 11 When anisotropic external magnetic field in this state is applied while the torque and the damping torque that causes rotation maintaining balanced relationship with each other, the magnetization M 11 is the magnetization reversal. That is, the magnetization M 11 is affected by two torques, and as an initial behavior, first rises in the z direction while precessing from the + y direction, and then reverses in the ⁇ y direction while precessing.
  • FIG. 4 is a schematic cross-sectional view of a magnetoresistive effect element that performs magnetization reversal using STT.
  • the magnetoresistive effect element 30 shown in FIG. 4 includes a free layer 31, a nonmagnetic layer 32, a fixed layer 33, and two wirings 34 sandwiching these layers, which are sequentially stacked.
  • the magnetoresistive effect element 30 shown in FIG. 4 when a current is passed between the two wirings 34, spin is injected from the fixed layer 33 to the free layer 31.
  • the spin injected from the fixed layer 33 has the same + z direction as the magnetization M 33 of the fixed layer 33. Therefore, the magnetization M 31 of the free layer 31 may magnetization reversal from -z direction + z-direction, the magnetization M 31 is reversed magnetization while precession.
  • the direction of the injected spin S 20 is orthogonal to the direction of the magnetization M 10 of the ferromagnetic metal layer 10. . Therefore, the magnetization M 10 oriented in the z-direction, though subjected to y-direction of the torque, such as an external magnetic field is applied in the y-direction.
  • the vector direction to which torque is applied is in the easy magnetization direction (z direction in FIG. 1). They are orthogonal to each other. Therefore, this torque does not have a balanced relationship with the damping torque applied in the + z direction. That is, the magnetization M 10 is the time of the magnetization reversal, under the influence of the torque applied to the y-direction, firstly fall quickly as the initial behavior from the + z direction to the y direction. Then, after the fallen to the y-direction, the magnetization M 10 is subjected to a force to be beyond the easy magnetization direction, reversed toward the -z direction while the precession.
  • This initial behavior is spin S 20 components intersecting the orientation direction of the magnetization M 10 occurs when it is injected into the ferromagnetic metal layer 10. Since the torque vector direction applied to the alignment direction are different magnetization M 10 (direction of orientation of the spins S 20 to be injected are different) as the initial behavior faster, the orientation direction of the spin S 20 to be injected, it is preferable that inclined 45 ° to 90 ° relative to the orientation of the magnetization M 10 of the ferromagnetic metal layer 10, are perpendicular (tilted 90 °) is more preferable. Therefore, in addition to the configuration of FIG. 1, for example, a configuration in which the direction of the injected spin S 20 is the y direction and the orientation direction of the magnetization M 10 is the x direction may be employed.
  • the magnetization switching element 100 has a damping constant larger than 0.01.
  • the damping constant has a close relationship with the magnetic anisotropy energy.
  • the damping constant is large, the magnetic anisotropy energy generally increases. That is, when a large damping constant, force the magnetization M 10 is the next in the easy magnetization direction is increased.
  • the force in which the magnetization M 10 to the other side in the easy magnetization direction is increased, the speed at which the faces in the -z direction becomes faster while the magnetization M 10 performs a precession.
  • Magnetization M 10 even when the initial behavior is affected by the force to beyond the easy magnetization direction.
  • the vector direction of the force exerted on the magnetization M 10 during the initial behavior is completely different direction as the easy axis, the effect is small. Further, since the ratio of the time spent for the initial behavior to the total time required for the magnetization reversal is small, the total time required for the magnetization reversal is sufficiently shortened even if the time required for the initial behavior is slightly increased.
  • the magnetization reversal element according to the first embodiment has a large damping constant, the magnetization reversal can be performed quickly.
  • the magnetization switching element according to the second embodiment has the same element configuration as the magnetization switching element according to the first embodiment.
  • the magnetization switching element according to the second embodiment has a ferromagnetic metal layer and a spin orbit torque wiring, and the direction of spin injected from the spin orbit torque wiring into the ferromagnetic metal layer depends on the magnetization of the ferromagnetic metal layer. Intersects the direction of
  • the magnetization reversal element according to the second embodiment includes a multilayer film of ferromagnetic metal layers of Co and Pt, a Co—Ni alloy, (Co x Fe 1-x ) 1-y B y (x> 0.75, y> 0.20), one or more substances selected from the group consisting of alloys containing rare earth elements, Fe 4 N, Fe—Co—Ni alloys.
  • Transition metals containing rare earth elements have a large damping constant due to the enhancement of the spin-orbit interaction.
  • Fe 1-x Gd x (x ⁇ 0.05) which is an Fe—Gd alloy
  • Sm—Fe alloy (SmFe 12 ) and Ho—Co alloy (HoCo 2 ) can be given as alloys containing rare earth elements.
  • the Sm—Fe alloy is a tetragonal magnetic material whose c-axis length is shorter than the a-axis length.
  • the Ho—Co alloy is a tetragonal magnetic material whose c-axis length is longer than the a-axis length.
  • the easy axis of magnetization of the first ferromagnetic layer 4 tends to be oriented in the direction perpendicular to the plane.
  • the film is formed in a magnetic field or annealed in a magnetic field, Can be directed in the direction of the magnetic field inside.
  • the Sm—Fe alloy and the Ho—Co alloy have strong magnetocrystalline anisotropy and a large damping constant, so that magnetization rotation hardly occurs. Therefore, the ferromagnetic metal layer formed using these materials has strong data retention.
  • damping constants are measured with a film thickness of 50 nm or more except for the multilayer film, and can be regarded as a sufficiently thick bulk material value.
  • the damping constant tends to increase due to the influence of the adjacent layer and the surface. Moreover, it is remarkable at 2 nm or less.
  • the damping constant in this embodiment is defined as a value that is not affected by the surface or interface.
  • a material having a relatively high damping constant in such a bulk state has a relatively high damping constant even in a thin film, so that relatively quick magnetization reversal is achieved. Since the Co / Pt multilayer film is less influenced by the surface and interface, the Co / Pt multilayer film is defined by the value of the damping constant measured in the laminated structure.
  • the magnetization reversal operation of the magnetization reversal element according to the second embodiment is the same as the magnetization reversal operation according to the first embodiment. Therefore, in the magnetization reversal of the magnetization reversal element according to the second embodiment, the direction of the spin injected from the spin orbit torque wiring into the ferromagnetic metal layer is 45 ° or more and 90 ° with respect to the magnetization direction of the ferromagnetic metal layer. It is preferable that it is inclined below, and it is more preferable that it is orthogonal (inclined 90 degrees).
  • the film thickness of the ferromagnetic metal layer is preferably 4 nm or less. Moreover, the lower limit of the film thickness of the ferromagnetic metal layer is not particularly limited, but is preferably 0.5 nm.
  • the ferromagnetic metal layer includes a predetermined material, and the damping constant of the ferromagnetic metal layer is large. Therefore, the magnetization reversal element according to the second embodiment can quickly perform the magnetization reversal.
  • FIG. 5 is a perspective view schematically showing a magnetization switching element according to the third embodiment.
  • the magnetization reversal element 102 according to the third embodiment includes the ferromagnetic metal layer 10 and the spin orbit torque wiring 20, and further includes an insertion layer 40 provided therebetween.
  • Other configurations are the same as those of the magnetization reversal elements according to the first and second embodiments, and the direction of the spin S 20 injected from the spin orbit torque wiring 20 into the ferromagnetic metal layer 10 depends on the ferromagnetic metal layer. It intersects with the direction of ten magnetizations M10.
  • the insertion layer 40 is made of a heavy metal having a melting point of 2000 degrees or higher, or an alloy containing a heavy metal having a melting point of 2000 degrees or higher.
  • heavy metals having a melting point of 2000 degrees or more include Ta, Ir, Mo, and W. Since these elements are difficult to diffuse even when heat is applied to the magnetization switching element, the characteristics of the magnetization switching element are unlikely to deteriorate.
  • the damping constant of the ferromagnetic metal layer 10 increases. In general, a heavy metal having a large contribution of 4d electrons, 5d electrons, or 4f electrons is said to have a large spin orbit interaction. This is because the damping constant is a constant affected by the magnitude of the spin-orbit interaction.
  • the spin-orbit interaction is an interaction between electron spin and electron orbital angular momentum, and extends to adjacent layers.
  • the damping constant of the ferromagnetic metal layer 10 adjacent to the insertion layer 40 containing the alloy containing the rare earth element is also increased.
  • the thickness of the insertion layer 40 is preferably not more than twice the atomic radius and less than twice the atomic radius.
  • a layer having twice the atomic radius corresponds to a layer corresponding to one atomic layer. That is, it can be said that the thickness of the insertion layer 40 is preferably equal to or less than the thickness of one atomic layer and less than the thickness of one atomic layer.
  • a film thickness less than the film thickness of one atomic layer is usually not possible.
  • the “film thickness for one atomic layer” here means the film thickness formed under the film forming conditions necessary for forming the film thickness for one atomic layer.
  • “Film thickness less than the thickness” means a film thickness laminated under film deposition conditions less than that condition. It is difficult with current technology to arrange atoms in a single layer. Therefore, it can be said that a layer having an atomic radius of 2 times or less is a layer having a plurality of gaps in a plan view (viewed from the z direction).
  • the spin S 20 is injected from the spin orbit torque wiring 20 into the ferromagnetic metal layer 10 through the insertion layer 40. Therefore, it is preferable that the insertion layer 40 does not inhibit this spin flow. If the thickness of the insertion layer 40 is not more than twice the atomic radius as described above, the insertion layer 40 has a plurality of gaps. That is, spin can be transmitted from the spin orbit torque wiring 20 to the ferromagnetic metal layer 10 through this gap.
  • the magnetization reversal operation of the magnetization reversal element 102 according to the third embodiment is the same as the magnetization reversal operation according to the first embodiment. Therefore, in the magnetization reversal of the magnetization reversal element 102 according to the third embodiment, the direction of spin injected from the spin orbit torque wiring 20 into the ferromagnetic metal layer 10 is 45 with respect to the magnetization direction of the ferromagnetic metal layer 10. It is preferably inclined at 90 ° or more and more preferably at 90 ° or 90 °.
  • the film thickness of the ferromagnetic metal layer 10 is preferably 4 nm or less. The lower limit of the film thickness of the ferromagnetic metal layer 10 is not particularly limited, but is preferably 0.5 nm.
  • the magnetization switching element 102 according to the third embodiment can quickly perform the magnetization switching.
  • FIG. 6 is a perspective view schematically showing a magnetoresistive element according to the fourth embodiment.
  • the magnetoresistive effect element 110 shown in FIG. 6 includes the magnetization switching element 100 according to the first embodiment, the nonmagnetic layer 50, the second ferromagnetic metal layer 60, and the wiring layer 70.
  • the magnetization reversal element 100 includes a ferromagnetic metal layer 10 and a spin orbit torque wiring 20.
  • the nonmagnetic layer 50 and the second ferromagnetic metal layer 60 are sequentially stacked on the surface of the ferromagnetic metal layer 10 opposite to the spin orbit torque wiring 20.
  • the example which uses the magnetization inversion element 100 concerning 1st Embodiment as a representative is shown as a magnetization inversion element, you may apply the magnetization inversion element concerning 2nd Embodiment or 3rd Embodiment.
  • the second ferromagnetic metal layer 60 is a fixed layer whose magnetic anisotropy is relatively stronger than that of the ferromagnetic metal layer 10 and whose magnetization direction is fixed in one direction.
  • the material of the second ferromagnetic metal layer 60 a known material can be used.
  • a metal selected from the group consisting of Cr, Mn, Co, Fe, and Ni and an alloy that includes one or more of these metals and exhibits ferromagnetism can be used.
  • An alloy containing these metals and at least one element of B, C, and N can also be used. Specific examples include Co—Fe and Co—Fe—B.
  • Heusler alloy such as Co 2 FeSi.
  • the Heusler alloy includes an intermetallic compound having a chemical composition of X 2 YZ, where X is a transition metal element or noble metal element of Co, Fe, Ni, or Cu group on the periodic table, and Y is Mn, V It is a transition metal of Cr, Ti or Ti, and can take the elemental species of X, and Z is a typical element of Group III to Group V. Examples thereof include Co 2 FeSi, Co 2 MnSi, and Co 2 Mn 1-a Fe a Al b Si 1-b .
  • an antiferromagnetic material such as IrMn or PtMn is brought into contact with the surface of the second ferromagnetic metal layer 60 opposite to the nonmagnetic layer 50. Also good. Further, in order to prevent the leakage magnetic field of the second ferromagnetic metal layer 60 from affecting the ferromagnetic metal layer 10, a synthetic ferromagnetic coupling structure may be used.
  • a known material can be used for the nonmagnetic layer 50.
  • the nonmagnetic layer 50 is made of an insulator (when it is a tunnel barrier layer), as the material, Al 2 O 3 , SiO 2 , Mg, MgAl 2 O 4 O, or the like can be used.
  • materials in which a part of Al, Si, Mg is substituted with Zn, Be, or the like can also be used.
  • MgO and MgAl 2 O 4 are materials that can realize a coherent tunnel, spin can be injected efficiently.
  • the nonmagnetic layer 50 is made of metal, Cu, Au, Ag, or the like can be used as the material.
  • the wiring layer 70 is not particularly limited as long as it has conductivity. For example, copper, aluminum, etc. can be used.
  • the magnetoresistance effect element 110 can read the magnetization state of the ferromagnetic metal layer 10 by measuring the resistance value between the spin orbit torque wiring 20 and the wiring layer 70. Resistance, low in the case of parallel magnetization M 60 of the direction and the second ferromagnetic metal layer 60 of the magnetization M 10 of the ferromagnetic metal layer 10, the direction and the second ferromagnetic magnetization M 10 of the ferromagnetic metal layer 10 magnetization M 60 of the metal layer 60 becomes high in the case of antiparallel.
  • the magnetoresistive effect element 110 As described above, according to the magnetoresistive effect element 110 according to the fourth embodiment, it is possible to appropriately read the information of the magnetization switching element 100 that can quickly perform the magnetization switching.
  • the magnetoresistive effect element 110 can be used for a memory device or the like. Examples thereof include a memory device having a magnetoresistive effect element 110 and a control element such as a transistor connected to the spin orbit torque wiring 20.
  • the control device can control the current flowing through the spin-orbit torque wires 20 to control the spin rate to be injected into the ferromagnetic metal layer 10 can be controlled the direction of the magnetization M 10.
  • the above-described magnetization reversal element and magnetoresistive effect element can be produced using a known film forming means such as sputtering and a processing technique such as photolithography. A metal constituting each layer is sequentially laminated on a substrate serving as a support, and then processed into a predetermined shape.
  • film forming methods include sputtering, vapor deposition, laser ablation, and MBE.
  • a resist film is formed in a portion where it is desired to leave, and unnecessary portions are removed by processing such as ion milling and reactive ion etching (RIE).
  • RIE reactive ion etching
  • a tunnel barrier layer is formed by first sputtering a metal thin film of about 0.4 to 2.0 nm on a ferromagnetic metal layer, and then naturalizing by plasma oxidation or oxygen introduction It can be formed by performing oxidation and subsequent heat treatment.
  • the present invention is not necessarily limited to the configuration and manufacturing method of the magnetization reversal element and magnetoresistive effect element according to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
  • the ferromagnetic metal layer is bonded to the spin orbit torque wiring
  • the ferromagnetic metal layer is connected to the spin orbit torque wiring and the insertion layer is interposed between them.
  • the present invention is not limited to this. If the spin of the spin orbit torque wiring can be injected into the ferromagnetic metal layer, another layer may be interposed between the ferromagnetic metal layer and the spin orbit torque wiring.
  • the layer that can be interposed between the ferromagnetic metal layer and the spin orbit torque wiring include a layer made of Ta, Ir, Mo, W, La, and Lu having a thickness of about 0.5 to 2 nm.
  • Example 1 In Example 1, the magnetization reversal behavior of the ferromagnetic metal layer was confirmed by simulation. The simulation was performed using the magnetic field simulation package software “FUJITSU Manufacturing Industry Solution EXAMAG LLG Simulator V2” widely used to confirm the magnetization reversal behavior of the conventional spin transfer torque. It is known that the result of the software can be correlated with actual measured values.
  • FIG. 7 is a schematic diagram of a calculation model used in the simulation. As shown in FIG. 7, 25 meshes each having a side of 2 nm and a height of 1 nm were used as the first layer A, and the same mesh was stacked on the first layer A to form the second layer B.
  • the xyz direction shown in FIG. 7 is a simulation setting and does not necessarily match the xyz direction according to the embodiment.
  • the first layer A was a free layer capable of magnetization reversal
  • the second layer B was a fixed layer with fixed magnetization. That is, the first layer A corresponds to the ferromagnetic metal layer 10 whose magnetization is reversed in FIG. 1, and the second layer B corresponds to the spin orbit torque wiring 20 for injecting spins in FIG.
  • the saturation magnetization Ms of the second layer B was set to 1.0 ⁇ 10 ⁇ 5 T.
  • the first layer A is a perpendicular magnetization film having an easy axis in the y direction.
  • the saturation magnetization Ms of the second layer B was set to 1.0 T, and the exchange stiffness A was set to 1.49 ⁇ 10 ⁇ 11 J / m.
  • the anisotropic magnetic field Hk was 1.2 T, and the damping constant (Gilbird relaxation coefficient) ⁇ was 0.01.
  • a model in which the spin of the second layer B oriented in the z direction is injected into the first layer A was reproduced.
  • the magnetization conditions for the magnetization reversal were as follows.
  • m x, m y, m z are each, x direction in the initial state, a magnetization in the y-direction, z-direction of the ferromagnetic metal layer, which will be described later Mx, My, an initial value for Mz.
  • the spin injection from the second layer B to the first layer A was assumed to pass a current in the x direction.
  • FIG. 8 is a diagram showing the strength of magnetization of the ferromagnetic metal layer of Example 1.
  • the horizontal axis represents seconds, and the vertical axis represents the magnitudes of Mx, My, and Mz.
  • Mx, My, and Mz are the magnetizations of the ferromagnetic metal layers in the x, y, and z directions, respectively.
  • FIG. 8A is a diagram illustrating the entire process in which the magnetization of the ferromagnetic metal layer is reversed
  • FIG. 8B is a diagram in which the initial behavior is extracted.
  • Examples 2 and 3 In Examples 2 and 3, simulations were performed under the same conditions as in Example 1 except that the damping constant ⁇ was changed. In Example 2, the damping constant ⁇ was 0.02, and in Example 3, the damping constant ⁇ was 0.1.
  • FIG. 9 is a diagram showing the relationship between the applied magnetization and the time required for magnetization reversal when the magnetization of the ferromagnetic metal layers of Examples 1 to 3 is reversed.
  • the vertical axis in FIG. 9A is the time required for the initial behavior, and the vertical axis in FIG. 9B is the time required until the magnetization reversal is completed.
  • the horizontal axis represents the magnitude H (Oe) of the applied external magnetic field.
  • the time required for the initial behavior tended to be longer as the damping constant was larger.
  • the time required for the initial behavior is shorter than the time required to complete the magnetization reversal. Therefore, as shown in FIG. 9B, when the damping constant is increased under the same applied magnetization condition, the time required for magnetization reversal is shortened.
  • Example 4 to 6 In Examples 4 to 6, the simulation was performed under the same conditions as in Examples 1 to 3, except that the applied current density was 3.5 ⁇ 10 11 A / m 2 .
  • the damping constant ⁇ was 0.01, in Example 5, the damping constant ⁇ was 0.02, and in Example 6, the damping constant ⁇ was 0.1.
  • FIG. 10 is a diagram showing the relationship between the applied magnetization and the time required for magnetization reversal when the magnetization of the ferromagnetic metal layers of Examples 4 to 6 is reversed.
  • the vertical axis in FIG. 10A is the time required for the initial behavior, and the vertical axis in FIG. 10B is the time required until the magnetization is completely reversed.
  • the horizontal axis represents the magnitude H (Oe) of the applied external magnetic field.
  • Examples 7 to 11 In Examples 7 to 11, after the magnetization rotated by 90 ° due to the initial behavior, a state in which the magnetization precesses due to the force to go in the easy magnetization direction was simulated.
  • the damping constant ⁇ is 0.01, in Example 8, the damping constant ⁇ is 0.02, in Example 9, the damping constant ⁇ is 0.03, in Example 10, the damping constant ⁇ is 0.05, In Example 9, the damping constant ⁇ was set to 0.1.
  • FIGS. 11 to 15 are diagrams showing the magnetization behaviors of Examples 7 to 11, respectively.
  • the horizontal axis represents seconds, and the vertical axis represents the magnitudes of Mx, My, and Mz.
  • the magnetization switching element of the present invention since the magnetization switching can be performed quickly, the magnetization switching element of the present invention is suitable for a memory device.

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Abstract

L'invention concerne un élément d'inversion de magnétisation comprenant : une couche métallique ferromagnétique; et un fil de couple spin-orbite qui s'étend dans une première direction croisant une direction d'empilement de la couche métallique ferromagnétique et sur une surface de laquelle la couche métallique ferromagnétique est positionnée. La direction de spin injecté à partir du fil de couple spin-orbite dans la couche métallique ferromagnétique croise la direction de magnétisation de la couche métallique ferromagnétique, et la couche métallique ferromagnétique a une constante de décharge supérieure à 0,01.
PCT/JP2018/006480 2017-02-24 2018-02-22 Élément d'inversion de magnétisation, élément magnétorésistif et dispositif de mémoire Ceased WO2018155562A1 (fr)

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