[go: up one dir, main page]

WO2018147164A1 - Dispositif de connexion de fil - Google Patents

Dispositif de connexion de fil Download PDF

Info

Publication number
WO2018147164A1
WO2018147164A1 PCT/JP2018/003450 JP2018003450W WO2018147164A1 WO 2018147164 A1 WO2018147164 A1 WO 2018147164A1 JP 2018003450 W JP2018003450 W JP 2018003450W WO 2018147164 A1 WO2018147164 A1 WO 2018147164A1
Authority
WO
WIPO (PCT)
Prior art keywords
wire
piezoelectric element
load
electrode
req
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/003450
Other languages
English (en)
Japanese (ja)
Inventor
一昭 長野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP2018567395A priority Critical patent/JP6637623B2/ja
Publication of WO2018147164A1 publication Critical patent/WO2018147164A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch

Definitions

  • the present invention calculates the power supplied to the piezoelectric element based on the resonance frequency of the ultrasonic horn, the load by which the capillary presses the wire against the electrode, and the power supplied to the piezoelectric element based on the calculated result.
  • the present invention relates to a wire bonding apparatus that adjusts a load applied to an electrode.
  • a wire bonding apparatus that connects a semiconductor die electrode and a substrate electrode with a wire such as gold, aluminum, or copper is often used.
  • the wire bonding apparatus presses a wire against each electrode with a bonding tool such as a capillary and ultrasonically excites the wire to bond the wire to the surface of the electrode.
  • Ultrasonic vibration of a wire is achieved by resonating an ultrasonic horn with an ultrasonic vibrator, transmitting the vibration to the wire with a bonding tool such as a capillary, and pressing the wire against the electrode with the bonding tool from the bonding tool to the wire. This is done by transmitting ultrasonic vibrations.
  • control parameters such as the pressing load of the wire and the energy input to the ultrasonic transducer.
  • JP 2012-74699 A Japanese Patent Laid-Open No. 11-176866
  • the control parameter of the wire bonding apparatus depends on the resonance frequency of the ultrasonic horn.
  • the resonance frequency of the ultrasonic horn is not taken into account in the adjustment and correction of the control parameter.
  • the control parameters cannot be adjusted and corrected appropriately, and a good wire is obtained. In some cases, bonding was difficult.
  • an object of the present invention is to provide a wire bonding apparatus capable of suitable wire bonding using ultrasonic horns having different resonance frequencies.
  • a wire bonding apparatus is a wire bonding apparatus for bonding a wire to an electrode, and includes a piezoelectric element, an ultrasonic horn that is vibrated by the piezoelectric element and ultrasonically vibrates at a specific resonance frequency, and an ultrasonic horn.
  • a capillary that is attached to the tip and presses the wire against the electrode and applies ultrasonic vibration to the wire, and power supplied to the piezoelectric element based on the resonance frequency of the ultrasonic horn, or a load that the capillary presses the wire against the electrode
  • a control unit that adjusts the power calculated by the calculation unit, the power supplied to the piezoelectric element based on the load, or the load by which the capillary presses the wire against the electrode.
  • the calculation unit calculates the power supplied to the piezoelectric element based on the resonance frequency of the ultrasonic horn and the load by which the capillary presses the wire against the electrode, and the control unit calculates the control unit
  • the electric power supplied to the piezoelectric element may be adjusted based on the generated electric power.
  • the calculation unit may calculate Power req , which is power supplied to the piezoelectric element, by the following equation (1).
  • f r is the resonant frequency of the ultrasonic horn
  • F req is load capillary presses the electrode
  • A is determined geometry a
  • bonding speed c the junction temperature d coefficient
  • B are coefficients determined by the material of the wire.
  • the calculation unit may calculate A by the following equation (2).
  • f is a function of the shape dimension a, the bonding pad material b, the bonding speed c, and the junction temperature d.
  • the calculation unit calculates the load by which the capillary presses the wire against the electrode based on the resonance frequency of the ultrasonic horn and the electric power supplied to the piezoelectric element, and the control unit calculates the calculation unit.
  • the load by which the capillary presses the wire against the electrode may be adjusted based on the applied load.
  • the calculation unit may calculate F req , which is a load by which the capillary presses the wire against the electrode, according to the following equation (3).
  • F req is the resonant frequency of the ultrasonic horn
  • Power req is power supplied to the piezoelectric element
  • A is determined geometry a
  • the material of the bonding pad b is determined by the junction temperature d coefficients
  • B is a coefficient determined by the material of the wire.
  • the present invention can provide a wire bonding apparatus capable of suitable wire bonding using ultrasonic horns having different resonance frequencies.
  • a wire bonding apparatus 100 includes a frame 10, an XY table 11 attached on the frame 10, a bonding head 12 attached on the XY table 11, and a bonding head. 12, a bonding arm 13 attached to 12, an ultrasonic horn 14 attached to the tip of the bonding arm 13, a piezoelectric element 16 for ultrasonically vibrating the ultrasonic horn 14, and a capillary attached to the tip of the ultrasonic horn 14. 15, a heat block 17 that heats and adsorbs the substrate 20 to which the semiconductor die 19 is attached, a control unit 50, and a calculation unit 60.
  • the XY direction indicates the horizontal direction
  • the Z direction indicates the vertical direction.
  • the bonding head 12 is moved in the XY direction by the XY table 11.
  • a Z-direction motor 30 that drives the bonding arm 13 in the vertical direction (Z direction) is provided inside the bonding head 12.
  • the Z-direction motor 30 includes a stator 31 fixed to the bonding head 12 and a mover 32 that rotates around a rotation shaft 35.
  • the mover 32 is integrated with the rear part of the bonding arm 13, and when the mover 32 rotates, the tip of the bonding arm 13 moves in the vertical direction.
  • the height of the rotation center 33 of the rotation shaft 35 of the mover 32 (indicated by the intersection of the alternate long and short dash line 37 and the alternate long and short dash line 36 in FIG. 1) is substantially the same as the bonding surface.
  • the tip of the capillary 15 moves up and down in a substantially vertical direction with respect to the upper surface of the electrode 19a (shown in FIG. 2A) of the semiconductor die 19.
  • a flange 14a of the ultrasonic horn 14 is fixed to the tip of the bonding arm 13 with a bolt 14b.
  • a recess 13 a for accommodating the piezoelectric element 16 is provided on the lower surface of the tip portion of the bonding arm 13.
  • the cross section of the ultrasonic horn 14 is narrowed from the flange 14a toward the tip in order to extend the ultrasonic vibration.
  • a capillary 15 is attached to the tip of the ultrasonic horn 14.
  • the capillary 15 has a cylindrical shape in which a hole for passing the wire 21 is provided at the center, and the outer diameter decreases toward the tip.
  • the heat block 17 is attached on the frame 10.
  • a heater 18 for heating the heat block 17 is attached to the heat block 17, and the substrate 20 is adsorbed and fixed on the upper surface thereof.
  • the driving power is supplied from the power source 41 to the stator 31 of the Z-direction motor 30 via the motor driver 42.
  • driving power is supplied to the piezoelectric element 16 from the power source 43 via the piezoelectric element driver 44.
  • the calculation unit 60 is a computer having a CPU for performing calculation processing and a memory for storing programs and the like. As shown in FIG. 1, the calculation unit 60 includes a first calculation block 61 that calculates the power Power req supplied to the piezoelectric element 16 necessary for bonding based on the resonance frequency fr of the ultrasonic horn 14, and the ultrasonic horn 14. A second calculation block 62 for calculating a load F req for pressing the wire 21 against the electrodes 19a and 20a of the semiconductor die 19 or the substrate 20 on the basis of the resonance frequency fr, and an input device (not shown). And an input unit 63 for receiving the data input.
  • the control unit 50 is a computer including a CPU 52 that performs arithmetic processing therein, a memory 53 that stores control programs, data, and the like, and a device / sensor interface 51 that performs input / output with devices and sensors.
  • the CPU 52, the memory 53, and the device / sensor interface 51 are connected by a data bus 54.
  • the control unit 50 receives the power Power req supplied to the piezoelectric element 16 calculated by the calculation unit 60 or the load F req that the capillary 15 presses the wire 21 against the electrodes 19 a and 20 a of the semiconductor die 19 or the substrate 20.
  • the power Power supplied to the element 16 or the load F by which the capillary 15 presses the wire 21 against the electrode of the semiconductor die 19 or the substrate 20 is adjusted.
  • the control unit 50 adjusts the load F by which the capillary 15 presses the wire 21 against the electrode of the semiconductor die 19 or the substrate 20 by adjusting the power supplied to the Z-direction motor 30.
  • the tip of the wire 21 penetrating the capillary 15 is formed in a spherical free air ball 21a.
  • a spark is generated between the torch electrode 22 and the tip of the wire 21 extending from the tip of the capillary 15, and the wire 21 is formed into a spherical shape by the heat.
  • the substrate 20 on which the semiconductor die 19 is attached is fixed to the heat block 17 by suction and heated to a predetermined temperature by the heater 18.
  • the Z-direction motor 30 is driven to rotate the bonding arm 13, and the tip of the capillary 15 is lowered toward the electrode 19 a of the semiconductor die 19. Then, the free air ball 21 a is pressed onto the electrode 19 a of the semiconductor die 19, and at the same time, alternating power is supplied to the piezoelectric element 16. Then, the alternating power is converted into a mechanical motion that expands and contracts in the thickness direction by the inverse piezoelectric effect of the piezoelectric element 16. When the frequency at that time and the natural frequency of the ultrasonic horn 14 are synchronized, the entire ultrasonic horn 14 resonates so as to expand and contract in the axial direction.
  • the capillary 15 attached to the tip of the ultrasonic horn 14 resonates ultrasonically in the bending direction with reference to the fastening portion with the ultrasonic horn 14.
  • the free air ball 21 a and the electrode 19 a of the semiconductor die 19 are joined by pressing the free air ball 21 a against the electrode 19 a by the capillary 15 and ultrasonic vibration.
  • a phonon is defined as a discrete quantum that behaves like a wave propagating through a crystal at the speed of sound. It is generated by irradiating the surface of a certain substance or the surface of a certain crystal with the vibration of the piezo element (piezoelectric element 16). Due to the interaction of phonon generation, heat conduction, thermal expansion, and diffusion transfer occur.
  • phonons concentrate only on sites with lattice imperfections such as dislocations and lattice defects, resulting in thermal and mechanical changes.
  • the generation of phonons is increased by increasing the vibration frequency of phonons, and in the dislocation movement at the bonding interface between the wire 21 and the electrodes 19a and 20a, the temperature of the movement inhibition minimum due to impurities / defects between metals. Has the effect of promoting the rise. (For example, refer nonpatent literature 1).
  • the single amplitude y req ( ⁇ m) of the ultrasonic vibration at the tip of the capillary 15 necessary for obtaining the required shear strength at the bonding interface is It is represented by the following formula (4).
  • A is a coefficient determined by the shape dimension “a”, the bonding pad material “b”, the bonding speed “c”, and the junction temperature “d” (see, for example, Non-Patent Document 2). That is, A is expressed as the following equation (2) using the function f.
  • B is a coefficient determined by the material of the wire 21.
  • fr is the resonance frequency fr of the ultrasonic horn 14, that is, the frequency (Hz) of ultrasonic vibration in wire bonding.
  • the electric energy (the amount of power, the unit is mWs) supplied to the piezoelectric element 16 is E
  • the necessary power amount (the unit is mWs) for obtaining the required shear strength at the bonding interface is E req . Since the interface bonding is achieved by the mechanical action of the amplitude motion of the capillary 15, if the required vibration speed (unit: m / s) is v req , the required electric energy E req is expressed by the following equation (5). It is shown by the formula.
  • T req is the process time (ms) required for bonding
  • Power req is the power (mW) supplied to the piezoelectric element 16
  • F req is the wire 21 or free air ball 21 a from the capillary 15 to the electrode of the semiconductor die 19.
  • a load (N) to be pressed to 19a is shown (hereinafter referred to as a bond load Freq ). Equation (5) is established when it is assumed that apparent power due to modulation and frictional heat from the capillary 15 are not expressed in the wire bonding process.
  • vibration velocity v req (m / s) is expressed by the following equation (8).
  • Equation (9) Substituting Equation (4) and Equation (2) into Equation (8) yields Equation (9) below.
  • a bond load F req (N), which is a load by which the capillary 15 presses the wire 21 against the electrode 19 a of the semiconductor die 19, is expressed by the following equation (3).
  • the coefficients A and B in each equation can take various values depending on the material, diameter, etc. of the wire 21.
  • a gold wire 21 with a diameter of 30 ( ⁇ m) is used, and a free diameter of 55 ( ⁇ m) is used.
  • the coefficient A is 1.85 and the coefficient B is 0.0016.
  • calculation examples in the case where the coefficient A and the coefficient B are 1.85 and 0.0016, respectively, are shown.
  • the effective power Power req (mW) is calculated as 30 (mW) from the equation (1).
  • the resonance frequency fr of the ultrasonic horn 14 is changed from 120 (kHz) to 150 (kHz) and the power Power req supplied to the piezoelectric element 16 is maintained at 30 (mW)
  • the necessary bond load F req ( N) is calculated to be 0.19 (N) by Equation (3).
  • the power Power req (mW) that is required to be supplied to the piezoelectric element 16 when the bond load F req (N) is defined based on the resonance frequency fr (kHz) of the ultrasonic horn 14 according to the equation (1). ) Can be calculated.
  • the required bond load F req (N) when the power Power req (mW) to be supplied to the piezoelectric element 16 is defined based on the resonance frequency fr (kHz) of the ultrasonic horn 14 is calculated by Expression (3). can do.
  • the power Power req (mW) that is required to be supplied to the piezoelectric element 16 or the necessary bond load F req (N) is suitably adjusted. It becomes possible to do.
  • the input unit 63 of the calculation unit 60 receives the resonance frequency fr (kHz) of the ultrasonic horn 14 and the power supplied to the piezoelectric element 16 from the external input device (not shown) Power req (mW ), Bond load F req (N), shape dimension a, bonding pad material b, bonding speed c, junction temperature d, and coefficient B.
  • Power req mW
  • Bond load F req N
  • shape dimension a bonding pad material
  • bonding speed c bonding speed c
  • junction temperature d junction temperature
  • coefficient B coefficient B
  • various values can be considered as the shape dimension a.
  • the diameter of the wire 21 or the diameter of the free air ball 21a may be used.
  • the input unit 63 adjusts the power req (mW) supplied to the piezoelectric element 16 based on the input data, or adjusts the bond load F req (N). Judge whether to do. Input unit 63, data is input in the bond force F req (N), when the power supply Power req to the piezoelectric element 16 (m) is not input, supplied to the piezoelectric element 16 power Power req It is determined that the (mW) adjustment is to be performed, and the process proceeds to step S103 in FIG. Conversely, power supply Power req to the piezoelectric element 16 (m) is input, when the data of the bond force F req (N) is not input, adjusts the bond force F req (N) The process proceeds to step S105 in FIG.
  • the input unit 63 receives the resonance frequency fr (kHz), bond load F req (N), shape dimension a, bonding pad material b, bonding speed c, input in step S103 of FIG.
  • the junction temperature d and the coefficient B are output to the first calculation block 61.
  • the first calculation block 61 uses the data input from the input unit 63 to calculate the coefficient A according to Equation (2), and calculates the power supply Power req (mW) to the piezoelectric element according to Equation (1). Output to the controller 50.
  • step S ⁇ b> 104 of FIG. 3 the control unit 50 uses the supply power Power (mW) to the piezoelectric element 16 as the supply power Power req (mW) to the piezoelectric element 16 input from the first calculation block 61. As described above, the electric power supplied to the piezoelectric element 16 is adjusted by adjusting the piezoelectric element driver 44.
  • the input unit 63 receives the resonance frequency fr (kHz) of the ultrasonic horn 14, the power req (mW) supplied to the piezoelectric element 16, the shape dimension a, and the bonding pad input in step S 105 of FIG. 3.
  • the material b, the bonding speed c, the junction temperature d, and the coefficient B are output to the second calculation block 62.
  • the second calculation block 62 uses the data input from the input unit 63 to calculate the coefficient A according to the equation (2), calculates the bond load F req (N) according to the equation (3), and sends it to the control unit 50. Output.
  • Step S ⁇ b> 106 of FIG. 3 the control unit 50 adjusts the motor driver 42 so that the bond load F (N) becomes the bond load F req (N) input from the second calculation block 62.
  • the current supplied to the Z direction motor 30 is adjusted.
  • the current may be adjusted, for example, by storing a map that defines the relationship between the current value and the bond load F in the memory 53 and adjusting the current value based on this map.
  • the wire bonding apparatus 100 needs to be supplied to the piezoelectric element 16 when the bond load F req (N) is defined based on the resonance frequency fr (kHz) of the ultrasonic horn 14.
  • the power Power req (mW) is adjusted.
  • the required bond load F req (N) when the power Power req (mW) supplied to the piezoelectric element 16 is defined can be adjusted.
  • the power Pow (mW) supplied to the piezoelectric element 16 or the bond load F (N) is adjusted, and wire bonding is suitably performed. It becomes possible.
  • the first calculation block 61 and the second calculation block 62 have been described as calculating the coefficient A by the input equation (2).
  • the present invention is not limited to this, and for example, the shape dimension a
  • the coefficient A may be determined using a map or a table that defines the correlation between the bonding pad material b, the bonding speed c, the junction temperature d, and the coefficient A. Further, when the ultrasonic horn 14 having a different resonance frequency fr is exchanged during the wire bonding process, the value of the coefficient A does not change, so that the value of the coefficient A used in the previous calculation is used as it is. You may make it use.
  • calculation unit 60 of the wire bonding apparatus 100 of the embodiment has been described as having two calculation blocks, the first calculation block 61 and the second calculation block 62, but the calculation program is changed in one calculation block. Thus, the same calculation may be performed.
  • each data is stored in a memory inside the calculation unit 60 and the ultrasonic wave is stored.
  • a vibration sensor for detecting the resonance frequency fr of the horn 14 is provided, and the resonance frequency fr of the ultrasonic horn 14 detected by the vibration sensor is input as input data from the input unit 63 to the calculation unit 60, and the data stored in the memory is used.
  • the power Power req (mW) or the bond load F req (N) that needs to be supplied to the piezoelectric element 16 is calculated, and the power Power or the bond load F calculated to be supplied to the piezoelectric element 16 by the control unit 50 is calculated.
  • the calculated power Power req (mW) or the bond load F req (N) may be adjusted.
  • the power Power supplied to the piezoelectric element 16 or the bond load F can be automatically adjusted to a suitable value, which is automatically suitable. Wire bonding can be performed. Since the resonance frequency fr of the ultrasonic horn 14 is the same frequency as the command of the alternating power output from the control unit 50 to the piezoelectric element driver 44, the control signal of the piezoelectric element driver 44 of the control unit 50 is sent to the calculation unit 60. You may make it detect by inputting.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)

Abstract

Ce dispositif de connexion de fil comprend : un élément piézoélectrique (16); un émetteur d'ultrasons (14); un capillaire (15), qui presse un fil (21) vers une électrode en étant fixé à une extrémité avant de l'émetteur d'ultrasons (14), et qui applique une vibration ultrasonore au fil (21); une unité arithmétique (60) qui calcule, sur la base de la fréquence de résonance fr de l'émetteur d'ultrasons (14), une puissance Powerreq ou une charge de liaison Freq à fournir à l'élément piézoélectrique (16); et une unité de commande (50) qui ajuste, sur la base de la puissance Powerreq ou de la charge de liaison Freq calculée par l'unité arithmétique, une puissance Power ou une charge de liaison F à fournir à l'élément piézoélectrique (16).
PCT/JP2018/003450 2017-02-09 2018-02-01 Dispositif de connexion de fil Ceased WO2018147164A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018567395A JP6637623B2 (ja) 2017-02-09 2018-02-01 ワイヤボンディング装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-022116 2017-02-09
JP2017022116 2017-02-09

Publications (1)

Publication Number Publication Date
WO2018147164A1 true WO2018147164A1 (fr) 2018-08-16

Family

ID=63108342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/003450 Ceased WO2018147164A1 (fr) 2017-02-09 2018-02-01 Dispositif de connexion de fil

Country Status (3)

Country Link
JP (1) JP6637623B2 (fr)
TW (1) TWI692043B (fr)
WO (1) WO2018147164A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220270937A1 (en) * 2021-02-23 2022-08-25 Kulicke And Soffa Industries, Inc. Methods of determining shear strength of bonded free air balls on wire bonding machines

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102411252B1 (ko) * 2019-03-08 2022-06-22 가부시키가이샤 신가와 와이어 본딩 장치
JP7592331B2 (ja) * 2023-03-22 2024-12-02 株式会社新川 ワイヤボンディング装置及び該装置の較正方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204300A (ja) * 1991-09-30 1994-07-22 Texas Instr Inc <Ti> 超小型電子ボンド形成方法および超小型電子デバイス
JP2001077156A (ja) * 1999-09-06 2001-03-23 Matsushita Electric Ind Co Ltd 超音波ボンディング装置及びボンディング方法
WO2014077232A1 (fr) * 2012-11-16 2014-05-22 株式会社新川 Dispositif de soudage de fils, et procédé pour le soudage de fils

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2725117B2 (ja) * 1992-07-21 1998-03-09 株式会社カイジョー ワイヤボンディング装置及びその方法
US5660319A (en) * 1995-01-17 1997-08-26 Texas Instruments Incorporated Ultrasonic bonding process
US8151266B2 (en) * 2008-03-31 2012-04-03 Qualcomm Incorporated Operating system fast run command
TWM369265U (en) * 2009-06-18 2009-11-21 Tong Yah Electronic Technology Co Ltd Signal box for virtual vehicular oxygen-content sensor
TWI506710B (zh) * 2009-09-09 2015-11-01 瑞薩電子股份有限公司 半導體裝置之製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204300A (ja) * 1991-09-30 1994-07-22 Texas Instr Inc <Ti> 超小型電子ボンド形成方法および超小型電子デバイス
JP2001077156A (ja) * 1999-09-06 2001-03-23 Matsushita Electric Ind Co Ltd 超音波ボンディング装置及びボンディング方法
WO2014077232A1 (fr) * 2012-11-16 2014-05-22 株式会社新川 Dispositif de soudage de fils, et procédé pour le soudage de fils

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220270937A1 (en) * 2021-02-23 2022-08-25 Kulicke And Soffa Industries, Inc. Methods of determining shear strength of bonded free air balls on wire bonding machines

Also Published As

Publication number Publication date
TW201834092A (zh) 2018-09-16
JP6637623B2 (ja) 2020-01-29
TWI692043B (zh) 2020-04-21
JPWO2018147164A1 (ja) 2019-07-04

Similar Documents

Publication Publication Date Title
US7819158B2 (en) Ultrasonic press using servo motor with integrated linear actuator
US8720516B2 (en) Ultrasonic press using servo motor with delayed motion
CN103028835B (zh) 主动控制振动的焊接系统和方法
JP6637623B2 (ja) ワイヤボンディング装置
CN105263695B (zh) 包括振动解耦配对工具的超声波焊接设备
JP5542361B2 (ja) サーボモータおよび遅延運動手法を使用した超音波プレス機
JPH0945736A (ja) 超音波ボンディング方法及び超音波ボンディング装置
CN104736990B (zh) 超声波疲劳试验机以及超声波疲劳试验方法
JP2012505083A5 (fr)
JPH07221141A (ja) 超音波ワイヤボンディング装置
JP2016117100A (ja) 接合装置
TWI226853B (en) Method for determining optimum bonding parameters for bonding with a wire bonder
JP2002190500A (ja) 超音波振動接合装置
JP4595020B2 (ja) ボンディング装置及びボンディングツール振巾測定方法ならびにボンディングツール振巾較正方法
JP7191421B2 (ja) ワイヤボンディング装置
JP3932286B2 (ja) ボンディングヘッドおよびこれを備えたボンディング装置
JP3487162B2 (ja) ボンディングツールおよびボンディング装置
JP4408046B2 (ja) 超音波接合方法と装置及び超音波振幅制御方法
JP2004167435A (ja) ボンディング用超音波ホーン及びこれを備えたボンディング装置
JP5675213B2 (ja) 電子部品の実装装置
JP2005230845A (ja) 超音波接合装置および電子デバイスの製造方法
JP2003258021A (ja) ワイヤボンディング装置
JP2000021924A (ja) ワイヤボンディング方法及び装置
JP2006239749A (ja) 超音波接合方法および超音波接合装置
JP4646862B2 (ja) 半導体チップの超音波接合方法およびその超音波接合装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18751783

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
ENP Entry into the national phase

Ref document number: 2018567395

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18751783

Country of ref document: EP

Kind code of ref document: A1