WO2018145728A1

WO2018145728A1 - Light-emitting device, light-emitting arrangement with such a device and method for producing such a device

Info

Publication number: WO2018145728A1
Application number: PCT/EP2017/052633
Authority: WO
Inventors: Keng Chong LIM; Wey Shyan LEE; Jun Jun LIM
Original assignee: Osram Opto Semiconductors GmbH
Current assignee: Ams Osram International GmbH
Priority date: 2017-02-07
Filing date: 2017-02-07
Publication date: 2018-08-16
Anticipated expiration: 2019-08-07

Abstract

According to one aspect of the invention a light-emitting device is specified, said light-emitting device comprising: a light-emitting semiconductor chip comprising a top surface, a bottom surface and side surfaces which connect the top surface and the bottom surface, a transparent material which completely surrounds the semiconductor chip at its side surfaces, a conversion element which comprises at least one luminescent substance, wherein the transparent material terminates flush with the top surface of the semiconductor chip or the top surface projects over the transparent material, and the conversion element covers an outer area of the transparent material and the top surface of the semiconductor chip.

Description

LIGHT-EMITTING DEVICE, LIGHT-EMITTING ARRANGEMENT WITH SUCH A DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE

A light-emitting device, a light-emitting arrangement and a method for producing a light-emitting device are specified.

The document WO 2016/131872 A2 describes a light-emitting device.

A light-emitting device is specified. The light-emitting device is, for example, a light-emitting diode. The light- emitting device emits light during operation. Thereby light is understood to be electromagnetic radiation in the spectral range from infrared radiation through visible light to ultraviolet radiation.

According to one aspect of the light-emitting device, the light-emitting device comprises a light-emitting

semiconductor chip. The light-emitting semiconductor chip is, for example, a light-emitting diode chip. The light-emitting semiconductor chip comprises, for example, a carrier or a growth substrate onto which layers of an epitaxially grown semiconductor material are applied. For example, the

semiconductor material is based on a III-V compound

semiconductor material. The light-emitting semiconductor chip comprises, for example, an active zone in which light is produced during the operation of the light-emitting

semiconductor chip. For example, the light is electromagnetic radiation from the spectral range between infrared radiation and ultraviolet radiation. The light-emitting semiconductor chip comprise a top surface, a bottom surface and at least one side surface, for example, four side surfaces which connect the top surface and the bottom surface. In operation of the light-emitting

semiconductor chip, produced light can leave the light- emitting semiconductor chip through all of said surfaces. In particular, most of the light is emitted through the top surface and the side surfaces of the chip. According to one aspect of the light-emitting device, the device comprises a transparent material, which completely surrounds the semiconductor chip at its side surfaces. That is to say in lateral directions which, for example, run in parallel to the plane which at least in places runs in parallel to the area of main extension of the bottom surface of the semiconductor chip, the semiconductor chip is

surrounded by the transparent material in all lateral

directions. For example, the transparent material is in direct contact with each side surface of the semiconductor chip. Further, it is possible that each side surface of the semiconductor chip is covered with the transparent material. In particular, at least 90% of each side surface is covered with the transparent material and in direct contact with the transparent material. Thereby it is also possible that each side surface is completely covered with the transparent material .

The transparent material is, for example, an optically clear and electrically insulating material. For example, the transparent material is free of particles, which are

radiation-scattering, radiation-reflecting or radiation- converting. That is to say at least there are no such

particles, which are intentionally introduced or mixed into the transparent material. As a result, the transparent material forms a transparent body, which laterally completely surrounds the semiconductor chip. According to one aspect of the light-emitting device, the device comprises a conversion element, which comprises at least one luminescent substance. The conversion element, for example, comprises a matrix or a base material into which particles of the luminescent substance are dispersed. Light emitted from the light-emitting semiconductor chip during operation, which enters the conversion element, can be converted by the conversion element to light having different wavelengths, for example a greater wavelength. In this way it is possible to change the colour of the light emitted by the semiconductor chip using the conversion element or to provide mixed radiation which comprises light emitted by the chip and light emitted by the conversion element. For example the mixed radiation is white light. According to one aspect of the light-emitting device the transparent material terminates flush with the top surface of the semiconductor chip or the top surface projects over the transparent material. That is to say, the transparent

material covers the side surfaces of the semiconductor chip at least up to a specific height such that a part of the semiconductor chip projects over the transparent material or the top surface terminates flush with the transparent

material . However, the top surface of the semiconductor chip and the bottom surface of the semiconductor chip remain completely or largely free from the transparent material. "Largely free" means that according to the method of manufacturing the device residues of transparent material can for example remain on the top surface of the semiconductor chip. However, the amount of these residues is small in comparison to the total amount of transparent material applied to the side surfaces of the semiconductor chip. For example, at most 1% of the volume of the applied transparent material remains at the top surface of the semiconductor chip, wherein the remaining 99% is applied in the region of the side surfaces of the semiconductor chip.

According to one aspect of the light-emitting device the conversion element covers an outer area of the transparent material and the top surface of the semiconductor chip. That is to say, the conversion element is not only applied to the surface of the semiconductor chip, but the conversion element also covers an outer area of the transparent material. For example, the light-emitting semiconductor chip and the transparent material are applied to a carrier. In this case, all outer surfaces of the transparent material which are not covered by the semiconductor chip and which are not covered by the carrier are covered by the conversion element. Further the complete top surface of the semiconductor chip is covered by the conversion element. Thereby the conversion element can be in direct physical contact with the semiconductor chip and the transparent material.

According to one aspect a light-emitting device is specified, said light-emitting device comprising:

- a light-emitting semiconductor chip comprising a top surface, a bottom surface and side surfaces which connect the top surface and the bottom surface,

- a transparent material which completely surrounds the semiconductor chip at its side surfaces, - a conversion element which comprises at least one

luminescent substance, wherein

- the transparent material terminates flush with the top surface of the semiconductor chip or the top surface projects over the transparent material, and

- the conversion element covers an outer area of the

transparent material and the top surface of the semiconductor chip . For example, the light-emitting device described herein is of a chip scale packaging design. That is to say, the light- emitting device consists of the semiconductor chip, the transparent material and the conversion element. In

particular, there is no further housing present into which the chip or the other components of the device are arranged.

Such devices of chip scale packaging design often have the problem that light which is emitted through side surfaces of the chip is absorbed by components of the device. This limits the entire brightness efficiency. This is in particular the case when a material filled with reflecting particles like, for example, particles of T1O2 is used to encapsulate the chip at its side surfaces in order to prevent so-called blue ring radiation. This blue ring radiation - also called blue piping - arises from light emitted by the semiconductor chip in the region of the edge, which surrounds the top surface of the semiconductor chip.

The present device inter alia relies on the insight that the extraction of light can be maximized while preventing any blue ring emission problem by embedding the semiconductor chip at its side surfaces into the transparent material wherein the outer surfaces of the transparent material and the top surface of the semiconductor chip are covered by the conversion element. Thereby it is, for example, possible to use a transparent material with a high refractive index in the region of the refractive index of the carrier or the substrate of the semiconductor chip, which enhances the light extraction out of the chip and allows to guide the light to the conversion element. In particular, it is possible to use transparent materials, which have a refractive index, which is closer to the refractive index of the carrier or the substrate of the semiconductor chip than the refractive index of the conversion element. Further, in this way the light emitted at the side surfaces of the semiconductor chip is not blocked by a reflective material, which has been found to lower the efficiency losses of the device.

Thereby it has been found that there is still some extent of light absorption even though, for example, T1O2 as a

reflective material has a naturally high reflectivity. For example, the absorption losses can contribute up to 1% of the light emitted by the semiconductor chip. According to the here described device, light emitted from the semiconductor chip will enter directly into the conversion element from the top surface of the chip or directly from the transparent material. For light which is back-scattered from the

conversion element there is no further absorption component. However, such light re-enters, for example, the carrier or growth substrate of the chip and is drawn out again by the transparent material, which is, for example, of high

refractive index.

As there are both top and side emissions from the device the here described device has a very broad brightness radiation pattern. Further, also due to the emission at the top surface and from the side surfaces there is a better angular

homogeneity of the emitted mixed radiation regarding the colour locus of the light in all directions. That is to say, the problem of blue ring emission is heavily reduced.

According to one aspect of the light-emitting device, the transparent material has planar outer surfaces wherein each outer surface encloses an angle with a plane which at least in places runs parallel to the area of main extension of the bottom surface of the semiconductor chip and the absolute value of the angle is at least 20° and smaller than 90°. That is to say each outer surface, for example four outer

surfaces, of the transparent material is formed in the manner of an inclined plane which connects on its upper side to the semiconductor chip. The lower side of the inclined plane, for example, connects to a carrier onto which the device is applied .

In particular the angle is chosen between at least 45° and at most 60°. With such an angle it is in particular feasible to add the conversion element at the outer surfaces of the transparent material and the top surface of the semiconductor chip. This is because the transition between the top surface of the semiconductor chip and the transparent material is not too steep and the angle is not so small that the outer surfaces of the transparent material become too extended such that the light emitted by the semiconductor chip is

distributed over a surface, which is too large. According to one aspect of the light-emitting device, the transparent material has four outer surfaces, which are inclined by the angle with respect to the plane. Hereby, each outer surface contacts the semiconductor chip at an edge which surrounds the top surface. That is to say, the upper ends of the outer surfaces, which are formed for example as inclined planes, end at the edge, which surrounds the top surface of the chip. In this way, the outer surfaces form ramps, which connect the surface of a carrier onto which the device is applied with the top surface of the semiconductor chip. This allows for a particularly smooth transition between the top surface of the semiconductor chip and the outer surfaces of the transparent body. Due to this smooth transition, the conversion element which is applied on the outer surfaces of the transparent material and the top surface of the semiconductor body can be a layer of constant thickness. Due to the smooth transition, the thickness of the layer can even be kept constant in the region of the edge of the semiconductor body. All in all this leads to a homogenous colour locus of the emitted light in all emission directions.

According to one aspect of the light-emitting device, the light-emitting device has the shape of a truncated pyramid. That is to say, the semiconductor chip and the transparent body formed with the transparent material form a truncated pyramid which itself is covered by the conversion element. The conversion element is of a constant thickness and over- molds the transparent material in the semiconductor chip following the outer contour of these elements. Accordingly, also the light-emitting device comprising the chip, the transparent material and the conversion element has the shape of a truncated pyramid. The base of this pyramid is formed by parts of the transparent material and the semiconductor chip and is for example rectangular.

According to one aspect of the light-emitting device the semiconductor chip is surface-mountable via contact elements arranged at the bottom surface of the chip. For example, the semiconductor chip is a semiconductor chip comprising a sapphire substrate. In this case, the semiconductor chip is a so-called sapphire chip. In particular, the semiconductor chip can be a sapphire flip-chip for which the contact elements for electrically connecting the semiconductor chip are arranged at the bottom surface of the chip. Such a sapphire chip has side surfaces of a large area, which are predominantly formed by the sapphire material of the growth substrate. For the here-described light-emitting device, light emitted through these surfaces is drawn into the transparent material from which it enters the conversion element . According to one aspect of the light-emitting device, the transparent material has an optical refractive index of at least 1.5 for electromagnetic radiation with a wavelength of 589 nm. That is to say, the transparent material is a

material with a high refractive index (HRI), for example a HRI silicon. That is to say, in particular the sapphire flip- chip is covered with a HRI clear silicon skin, which covers the side surfaces of the semiconductor chip. The transparent material thereby maximizes the extraction of light out of the semiconductor chip to the conversion element as it provides a closer refractive index value to the sapphire material of the chip than the conversion element. Further, the transparent material does not block the side emission through the side surfaces of the semiconductor chip. For the light-emitting device it is further possible that the top surface of the semiconductor chip is also formed by material of the sapphire substrate. That is to say, the semiconductor layers comprising the active region which produces light during operation of the chip are arranged at a side of the sapphire substrate which faces away from the top surface of the chip. According to one aspect of the light-emitting device, the conversion element is part of a conversion sheet. For example the conversion element is an A-stage phosphor sheet which is laminated onto the transparent material covering both the semiconductor chip' s top surface and the side surfaces conforming to the transparent material. During curing the

A-stage phosphor sheet melts and conforms to the transparent material to prevent any Fresnel losses at the interface between the transparent material and the conversion element and simultaneously to form chemical bonding to the

transparent material. In this case, the mechanical bond between the transparent material and the conversion element is particularly strong if the transparent material is formed with a HRI silicon. With such a construction, the extraction of light from the semiconductor chip is maximized and, for example, extracted blue light emitted from the semiconductor chip is transmitted to the conversion element with minimum absorption losses. Thus, the overall brightness efficiency is enhanced. At the same time, the risk of a blue ring emission is heavily reduced by the described design.

Further, a light-emitting arrangement comprising a here- described light-emitting device is specified. All features described for the light-emitting device are also described for the light-emitting arrangement and vice versa.

The light-emitting arrangement according to one aspect comprises a light-emitting device described herein, a

connection carrier which comprises a base body and connection locations and a reflective layer which is arranged between the light-emitting device and the base body. For example, the reflective layer can be a separate component or be part of the connection carrier.

The connection carrier is, for example, a circuit board or a printed circuit board, which comprises connection locations for contacting the light-emitting device. It is further possible that the connection carrier is a flexible circuit board or a flexible printed circuit board.

The reflective layer is, for example, a layer formed with reflective or light-scattering particles like particles of TiC>2 · Further, it is possible that the light-reflective layer is formed as a reflective metal layer, which can be formed, for example, of silver. Further, it is possible that the light-reflective layer is formed with layers of insulating material having different refractive indexes such that the light-emitting layer is, for example, given by a Bragg reflector. Further, it is possible that the reflective layer is formed with the solder stop material, which, for example, is of white colour.

The light-emitting device is mechanically and electrically connected to the connection carrier, for example via the contact elements of the chip. For example, the light-emitting device and the connection carrier are connected using a solder material or an electrical conductive glue. Further, the reflective layer covers the light-emitting device at its bottom surface in the region of the

semiconductor chip and in the region of the transparent material. For example, the light-reflecting material fills, except for the connection locations, an area, which has the same shape and the same size as the bottom surface of the light-emitting device, which is formed, by the bottom

surfaces of the semiconductor chip and the bottom surface of the transparent material. In this way the reflective layer not only reflects radiation emitted through the bottom surface of the semiconductor chip in the direction of the connection carrier but also light emitted through the bottom surface of the transparent material in the direction of the connection carrier is reflected by the reflective layer.

Further, a method for producing the here-described light- emitting device is specified. That is to say all features described for the light-emitting device are disclosed for the method and vice versa. According to one aspect the method comprises a method step in which a plurality of light- emitting semiconductor chips is placed on an auxiliary carrier . The auxiliary carrier is, for example, formed with a rigid material like a plastic material or a metal material. Between the auxiliary carrier and the semiconductor chips a release tape like, for example, a thermal release tape such as a REVALPHA tape can be arranged.

In a next method step, each semiconductor chip is surrounded with a transparent material. For example, a ramp-like HRI clear silicon skin is formed covering the four side surfaces of each semiconductor chip via a film-assisted molding process.

In a next method step a conversion sheet, for example an A- stage phosphor sheet, is applied over a plurality of arrangements wherein each arrangement comprises a light- emitting diode chip and its corresponding transparent

material. For example, in this way the conversion sheet is applied over all light-emitting semiconductor chips of the plurality of semiconductor chips.

In a following method step, a plurality of light-emitting devices is produced by separating wherein each device

comprises at least one light-emitting semiconductor chip, the corresponding transparent material surrounding the at least one light-emitting semiconductor chip and a conversion element which is a part of the conversion sheet.

In particular, the described method is performed in the given order of method steps.

According to one aspect of the method, the conversion sheet is fastened to the transparent material by curing under vacuum suction. That is to say, the conversion sheet is, for example, laminated onto the semiconductor chip and the transparent material by applying vacuum pressure in order to conform the conversion element. Afterwards the whole assembly can be subjected to final curing for both the conversion element and the transparent material.

In the following, the here-described light-emitting device, the here-described assembly and the here-described method are explained in more detail with regard to exemplary embodiments and the corresponding figures.

In the exemplary embodiments and figures, similar or

similarily acting constituent parts are provided with the same reference symbols. The elements illustrated in the figures and their size relationships among one another should not be regarded as true to scale. Rather, individual elements may be represented with an exaggerated size for the sake of better representability and/or for the sake of better

understanding.

The schematic drawings of Figures 1A and IB show a here- described light-emitting device according to a first

embodiment .

The schematic drawings of Figures 2A and 2B illustrate the embodiment of a here-described arrangement.

With the schematic drawings of Figures 3A, 3B, 3C, 3D, 3E a method for producing a here-described light-emitting device according to one embodiment of the method is described.

With the schematic drawings and graphics of Figures 4A, 4B, 5A and 5B some advantages of an embodiment of a here- described light-emitting device are explained.

Figure 1A shows a schematic sectional view of an embodiment of a here-described light-emitting device. The light-emitting device comprises a light-emitting semiconductor chip 1, which is, for example, a sapphire flip-chip. The semiconductor chip 1 has a substrate 12, which is, for instance, formed with sapphire and a semiconductor body 13, which is, for example, epitaxially grown on the substrate. The semiconductor body 13 can comprise one or more active zones in which radiation is produced during operation of the chip 1.

The light-emitting semiconductor chip 1 comprises a top surface la, a bottom surface lb and four side surfaces lc, which connect the top surface la and the bottom surface lb with each other.

A transparent material 2, which is, for example, a silicon with a refractive index of at least 1.5, in particular of at least 1.56, surrounds the semiconductor chip 1 at its side surfaces lc, completely. The transparent material 2 has planar outer surfaces 2c, which form inclined planes, which connect the edge Id of the semiconductor chip 1 and the bottom plane 4. The plane 4 is parallel to a plane of main extension of the bottom surface lb of the light-emitting semiconductor chip 1.

In the embodiment of Figure 1A the transparent material 2 terminates flush with the top surface la of the semiconductor chip which allows for a particular smooth transition between the chip 1 and the transparent material 2 at the edge Id of the chip. The light-emitting device further comprises a conversion element 3 which comprises at least one luminescence

substance. For example, the conversion element 3 is a part of an A-plane phosphor sheet. The conversion element covers an outer area of the transparent material and the top surface of the semiconductor chip 1 and is in direct contact with the transparent material and the top surface la of the

semiconductor chip 1.

Radiation, symbolized by the arrows in Figure 1A, which emerges from the side surfaces lc, is drawn into the

transparent material 2 and leaves the transparent material 2 thereby entering the conversion element 3 where at least part of the light is converted such that the light-emitting device for example emits white light.

Figure IB shows a top view of the light-emitting device shown in Figure 1A. As becomes apparent from Figure IB the light- emitting device has the shape of a truncated pyramid.

The schematic drawings of 2A and 2B show an embodiment of a here described arrangement comprising an embodiment of a here described light-emitting device 100. The light-emitting device 100 comprises contact elements 11 at its bottom surface 100b and is therefore surface-mountable . The contact elements 11 are thereby the contact elements of the

semiconductor 1. The contact elements 11 are electrically and mechanically connected to contact locations 51 of the

connection carrier 5, which is, for example, a printed circuit board.

The connection carrier 5 comprises a base body 50 of an electrically insulating material onto which the connection locations 51 are arranged. Between the light-emitting device 100 and the base body 50 a reflective layer 52 is arranged which has the shape and size of the footprint 53 of the light-emitting element. Thereby Figure 2B shows a top view of the connection carrier 5. Thereby it is one further advantage of the here described light-emitting element that the

footprint 53 of the light-emitting element is small in comparison with an element comprising an additional

reflector, e.g. formed with Ti02-

With the sectional drawings of Figures 3A to 3E an embodiment of a here-described method for producing an embodiment of a here-described light-emitting device is described. According to this method a plurality of light-emitting chips 1 is applied to an auxiliary carrier 6 wherein between the

auxiliary carrier 6 and the chips a release tape 7, for example a thermal release tape, is arranged. This is shown in Figure 3A. In the next message step, Figure 3B, the

transparent material is applied using a film-assisted method process .

In the following method step, Figure 3C, a conversion sheet 30 is applied to all arrangements of chips 1 and

corresponding transparent material 2. Using, for example, vacuum suction, the sheet is applied in a conform manner to the transparent material 2 and the top surfaces la of the chips 1 in the direction of the arrows indicated in Figure 3C.

The resulting arrangement of conversion sheet 30, chips 1 and transparent material 2 is connected to each other by curing, see Figure 3D.

In the next method step, single light-emitting devices are produced, for example by sawing into individual units. These units can be transferred and laminated to a final testing station .

In connection with Figure 4A a comparison example of a light- emitting device is described. This example of a light- emitting device comprises the same light-emitting chip as a here-described light-emitting device and the same conversion element 3 as a here-described device. However, the chip 1 is embedded into a reflective coating 8 which is, for example formed with an HRI silicon into which reflective particles TiC>2 are introduced. For example the reflective coating 8 comprises 35 Wt% of T1O2 · The refractive index of the matrix material is 1.5675.

This example is compared with an embodiment of a here- described light-emitting device as shown in Figure 4B which has the transparent material 2 with an inclined outer surface 2c surrounding the semiconductor chip 1.

The comparison shows that the absorption losses in a here- described light-emitting device are reduced, for example because 0.83% of the radiation emitted by the semiconductor chip 1 of figure 4A is absorbed by the T1O2 ·

Figure 5A shows the intensity in cd against the emission angle for two directions. Figure 5B shows the same curves for a here-described light-emitting device. According to these measurements a here-described device according to figure 4B has an efficiency of 8.7401 in comparison with an efficiency of 8.1087 for the device of Figure 4A. The luminous flux Φν for the present device is 29.7 lumen wherein the luminous flux for the comparison example is 27.5 lumen. All in all the brightness gain due to the described design is 7.6%.

The invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary

embodiments. Rather, the invention encompasses any new feature and also any combination of features, which in particular comprises any combination of features in the patent claims and any combination of features in the

exemplary embodiments, even if this feature or this

combination itself is not explicitly specified in the patent claims or exemplary embodiments. Reference signs

1 semiconductor chip

la top surface

lb bottom surface

lc side surfaces

Id edge

11 contact element

12 substrate

13 semiconductor body

2 transparent material

2c outer surfaces

3 conversion element

30 conversion sheet

a angle

4 plane

5 connection carrier

50 base body

51 contact locations

52 reflective layer

53 footprint

6 auxiliary carrier

7 tape

8 reflective coating

100 light-emitting device

100b bottom surface of light-emitting device

Claims

1. A light-emitting device (100) comprising

- a light-emitting semiconductor chip (1) comprising a top surface (la), a bottom surface (lb) and side surfaces (lc) which connect the top surface (la) and the bottom surface (lb) ,

- a transparent material (2) which completely surrounds the semiconductor chip (1) at its side surfaces (lc),

- a conversion element (3) which comprises at least one luminescent substance, wherein

- the transparent material (2) terminates flush with the top surface (la) of the semiconductor chip (1) or the top surface (la) projects over the transparent material (2), and

- the conversion element (3) covers an outer area of the transparent material (2) and the top surface (la) of the semiconductor chip (1) .

2. The light-emitting device (100) according to the

preceding claim,

in which the transparent material (2) has planar outer surfaces (2c) , wherein

each outer surface (2c) encloses an angle (a) with a plane (4) which at least in places runs parallel to the area of main extension of the bottom surface (lb) of the

semiconductor chip (1), and

the absolute value of the angle (a) is at least 20° and smaller than 90°.

3. The light-emitting device (100) according to the

preceding claim,

in which the transparent material (2) has four outer surfaces (2c) which are inclined by the angle (a) with respect to the plane (4), wherein each outer surface contacts the

semiconductor chip (1) at an edge (Id) which surrounds the top surface ( la) .

4. The light-emitting device (100) according to one of the preceding claims,

which has the shape of a truncated pyramided.

5. The light-emitting device (100) according to one of the preceding claims,

in which the semiconductor chip (1) is surface mountable via contact elements (11) arranged at the bottom surface (lb) .

6. The light-emitting device (100) according to one of the preceding claims,

in which the transparent material has an optical refractive index of at least 1.5 for electromagnetic radiation with a wavelength of 589 nm.

7. The light-emitting device (100) according to one of the preceding claims,

in which the conversion element (3) is part of a conversion sheet (30) .

8. A light-emitting arrangement comprising

- a light-emitting device (100) according to one of the previous claims,

- a connection carrier (5) comprising a base body (50) and connections locations (51), and

- a reflective layer (53) which is arranged between the light-emitting device (100) and the base body, wherein

- the light-emitting device (100) is mechanically and electrically connected to the connection carrier (5) , and - the reflective layer (53) covers the light-emitting device (100) at its bottom surface (100b) in the region of the semiconductor chip (1) and in the region of the transparent material (2 ) .

9. A method for producing the light-emitting device (100) according to one of the previous claims comprising the steps of

placing a plurality of the light-emitting semiconductor chips (1) on an auxiliary carrier,

surrounding each semiconductor chip (1) with the

transparent material (2),

applying a conversion sheet (30) over a plurality of arrangements, each arrangement comprising a light-emitting semiconductor chip (1) and its corresponding transparent material (2 ) ,

separating into a plurality of light-emitting devices (100), each device comprising at least one light-emitting semiconductor chip (1), the corresponding transparent

material (2) surrounding the at least one light-emitting semiconductor chip (1), and a conversion element (3) which is a part of the conversion sheet (30) .

10. The method according to the preceding claim,

wherein the conversion sheet (30) is fastened to the

transparent material by curing under vacuum suction.