WO2018143838A1 - Ionizing radiation converter with cross-linked structure and its fabrication method - Google Patents
Ionizing radiation converter with cross-linked structure and its fabrication method Download PDFInfo
- Publication number
- WO2018143838A1 WO2018143838A1 PCT/RU2017/000663 RU2017000663W WO2018143838A1 WO 2018143838 A1 WO2018143838 A1 WO 2018143838A1 RU 2017000663 W RU2017000663 W RU 2017000663W WO 2018143838 A1 WO2018143838 A1 WO 2018143838A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- conductivity type
- junction
- horizontal
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- This invention relates to converters of ionizing radiation energy to electricity (EMF) and can be used in drone aviation, highly explosive areas, e.g. in mines, in nighttime indicators located in difficultly accessible areas, in medicine (cardiac pacemakers) etc.
- EMF ionizing radiation energy to electricity
- Disadvantages of the structure are the relatively small volume of the irradiated semiconducting material due to the small irradiated surface area and the limited penetration depth of ionizing beta radiation (less than 25 ⁇ ) the short minority carrier charge lifetime due to the structural defects during vanadium doping of the working area.
- the surface of the microchannel walls as well as the front and rear surfaces of semiconductor wafer have microtextures, almost the entire semiconductor wafer surface except its side surface comprises a doped layer forming a p-n junction and a diode structure, doped layer is covered with a radioactive semiconductor layer acting as a current collecting contact in to the diode structure and is a beta radiation source, the doped layer and the bottom layer replicate the shape of the textured surface, and the contact to the base region of the semiconductor wafer is located on the side surface.
- Disadvantages of the semiconductor converter are the complex technology of its production and filling of the penetrating channels with solid- state radioactive isotopes. Low quality of the textured surface of penetrating channels and hence intense leakage that do not allow achieving high specific power of the converter.
- the prototype of the first object of this invention is a 3D structure of a semiconductor beta-voltaic converter, transforming radiation to electricity (US 20080199736, publ. 21.08.2008) wherein at the top surface of a low-doped n (p) conductivity type semiconductor wafer vertical are located channels, the surfaces of which comprise heavily doped p + ⁇ n + ) regions forming vertical p-n junctions with the semiconductor wafer, the channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode) of the converter diode, and the bottom wafer surface a horizontal heavily doped n + (p + ) contact layer is located the surface of which a metallic electrode of anode (cathode) is situated .
- the prototype of the second subject of this invention is the method of fabricating a 3D structure of a semiconductor diode used as a beta-voltaic converter of the beta radiation of 63 Ni isotope to electricity (US 20080199736, publ. 21.08.2008) which comprises the formation of a horizontal heavily doped n + (p + ) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, doping of the channel wall surfaces, the deposition of radioactive isotope metal for electrode, i.e.
- anode onto the top surface of the wafer and into the channels, and the deposition of a metal layer for electrode, i.e. anode (cathode), onto the bottom surface of the wafer.
- a metal layer for electrode i.e. anode (cathode) onto the bottom surface of the wafer.
- Disadvantages of the known method are the complex and insufficiently reproducible technology of synthesizing p-n junctions in the channels reducing the efficiency of the converter and, most importantly, a high level of dark current (I D ) of the bulk p-n junction dramatically reducing the idle voltage (Ui d ) of the converter and hence the maximum output power (P max ) because
- the technical result of the first subject of this invention is an increase in the energy E u per unit volume of the converter due to the large emitting surface of the radioactive isotope (S em ) and hence the area of the bulk p-n junction (S pn>b ).
- the design of the ionizing radiation converter with cross-linked structure comprises a weakly doped n(p) conductivity type semiconductor wafer the bulk of which comprises vertical channels one end of which is connected to the wafer surface, and the channel wall surfaces comprise heavily doped p + ⁇ n + ) conductivity type regions forming vertical p-n junctions with the semiconductor wafer.
- the channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode), of the converter diode and the bottom surface of the wafer comprises a horizontal heavily doped n + (p + ) conductivity type layer the surface of which comprises a metallic electrode, i.e. anode (cathode), of the converter.
- conducting radioactive isotope material forming the electrode, i.e. anode (cathode) of the converter diode and the bottom surface of the wafer comprises a horizontal heavily doped n + (p + ) conductivity type layer the surface of which comprises a metallic electrode, i.e. anode (cathode), of the converter.
- the top surface of the wafer comprises a horizontal heavily doped p + (n + ) conductivity type region forming a horizontal p-n junction.
- the surfaces of the vertical channels are low-doped and have the n(p) conductivity type, wherein one end of each of the vertical channels is connected to the bottom wafer surface and the other end, i.e. the bottom of each of the vertical channels is at a distance from the top surface of the wafer, the distance being greater than the total depth of the horizontal p-n junction in the space charge region formed by it.
- the technical result of the second subject of this invention includes a simplification of the converter fabrication technology.
- the fabrication method comprises the formation of a horizontal heavily doped n + (p + ) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, doping of the channel wall surfaces, the deposition of radioactive isotope metal for electrode, i.e. anode (cathode), onto the top surface of the wafer and into the channels, and the deposition of a metal layer for electrode, i.e. anode (cathode), onto the bottom surface of the wafer.
- the vertical channels are formed by etching the bottom surfaces of the low-doped n(p) conductivity type wafer, following which the channel wall surfaces are doped with a donor (acceptor) impurity and a horizontal p-n junction is formed on the top surface of the wafer by doping with an acceptor (donor) impurity.
- FIG. 1 shows a section of the converter structure for the first structure example
- Fig. 2 shows a bottom view of the converter structure for the first structure example
- Fig. 3 shows a section of the converter structure for the second structure example
- Fig. 4 shows a bottom view of the converter structure for the second structure example.
- the design of the converter of this invention comprises a low-doped n(p) conductivity type semiconductor wafer (1), the bottom surface of the wafer comprises an n + (p + ) conductivity type contact layer (2), the wafer bulk comprises vertical channels (3) wherein one end of each of the vertical channels is connected to the bottom wafer surface, the top wafer surface comprises an n + (p + ) conductivity type region (4) of a horizontal p-n junction wherein the region forms a space charge region (5) with the wafer, the surface of the n + (p + ) conductivity type region comprises metallic radioactive isotope forming the anode (6) of the diode, and the bottom wafer surface and the channels comprise metallic radioactive isotope forming the cathode (7).
- the operation principle of the converter of this invention is based on the ionization of the semiconducting material (e.g. silicon) by beta radiation of isotopes, e.g. nickel, tritium, strontium, cobalt etc..
- the electron/hole pairs forming due to the irradiation are separated by the field of the p-n junction in the space charge region and produce a difference of potentials between the p + and n regions of the converter (the photovoltaic EMF). Simultaneously, part of the electron/hole pairs can alternatively be accumulated by the field of the p-n junction in the quasi-neutral region at the diffusion length distance.
- Embodiments of the Invention Different examples of beta converter design are possible that differ in their technical parameters.
- the converter shown in Figs. 1&2 has the highest unit power but is quite expensive due to the large quantity of nickel in the channels.
- the converter shown in Figs. 3&4 requires far smaller quantity of 63 Ni and is therefore cheaper while having a lower unit power.
- the isotope source can be selected, for example, as 63 Ni having a long half decay time of 50 years and emitting electron radiation with an average energy of 17 keV and a maximum energy of 64 keV which bears almost no hazard for health. This electron energy is lower than the defect formation energy in silicon which is 160 keV.
- the absorption depth of electrons with an average energy of 17 keV in silicon is approx. 3.0 ⁇ ; for 90% absorption this depth is 12 ⁇ ⁇ ⁇ .
- the radiation source can be not necessarily a beta radiation source but alternatively an alpha radiation
- the fabrication method of the converter of this invention comprises the following sequence of process steps.
- the leakage current of the equal area p-n junction formed in the channel is three orders of magnitude greater:
- ⁇ is the thermal potential and I sc is the short circuit current generated by the radioactive radiation.
- the converter power is determined by the following relationship:
- P max . p i is 1.7 nW
- P max.b is 0.08 nW.
- the technical advantage of this invention are an increase in the unit power and the efficiency of the converter and a simplification and a lower price of its technology.
- the ionization current receiver is a horizontal (not vertical) p-n junction having a relatively small area (S p-n , nsi ) located on a high quality polished top surface of the wafer, this minimizing the dark current and increasing the idle voltage and hence the unit power of the converter.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Dc-Dc Converters (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to energy converters transforming ionizing radiation of isotope sources into electricity (EMF). These sources differ from capacitors and batteries by far greater energy per unit volume but have low emitted power per time unit. These sources are capable to provide direct charging of high-power batteries or capacitors in the absence of solar radiation while having low weight and small dimensions. The isotope converters life time is determined by the half-decay period of the irradiating material. For 63Ni the lifetime is about 100 years. The aims of this invention are increasing the specific output power of ionizing radiation converters, simplification and cost reduction of their technology. These aims are achieved by using a specific the beta radiation converter construction and its production technology in which provide the maximum area of the isotope emitting surface is realized with the minimum area of the high-quality planar horizontal p-n junction. These advantages permit to the minimize dark current and hence increase the open-circuit voltage and power dencity of the converters.
Description
Ionizing Radiation Converter with cross-linked Structure and Its
Fabrication Method
Field of the Invention. This invention relates to converters of ionizing radiation energy to electricity (EMF) and can be used in drone aviation, highly explosive areas, e.g. in mines, in nighttime indicators located in difficultly accessible areas, in medicine (cardiac pacemakers) etc.
The interest to these power sources is dictated, to a large extent, by the high energy density of radioactive isotope chemical elements which is comparable to the energy density of lithium batteries, as well as by the possibility of incorporating radioisotope batteries into micro-electromechanical systems the technology of which has been developing intensely nowadays. Independent power sources based on beta-voltaic batteries are necessary in plenty areas:
- in medicine, for implanted sensors and pacemakers to be implanted, for example, directly in the patient's heart (cardiac pacemakers). The durable power source with long service lifetime (independent life time is not less then 25 years) will eliminate the necessity of repeated surgeries for cardiac pacemaker power source replacement.
- for sensors embedded into the construction, e.g. for the meteorogical stations power supply located in difficultly accessible areas that provide for independent measurement of temperature, atmospheric pressure and wind speed with the use of self-recorders.
- in space engineering, more specifically, for auxiliary power sources in the navigation satellites because in space the power sources should produce electricity for a long time under the conditions of abrupt and very strong temperature change.
- in military industry, for example, for microrobotics as power sources of on-ground devices and dron aviation used for intelligence and other tactical purposes.
Prior Art. It is known (US 20140225472, publ. 14.08.2014) a device structure comprising a low-doped n (p) conductivity type semiconductor wafer comprising a heavily doped n+(p+) region on the surface of which a conducting electrode is located, i.e. cathode (anode), at the top of the wafer it is heavily doped p+{n+) region forming a p-n junction with semiconductor wafer, on the surface p+{n+) region it is a layer of insulating dielectric and a conducting anode electrode, i.e. cathode (anode), the latter being a radioactive isotope.
Disadvantages of the structure are the relatively small volume of the irradiated semiconducting material due to the small irradiated surface area and the limited penetration depth of ionizing beta radiation (less than 25 μιιι) the short minority carrier charge lifetime due to the structural defects during vanadium doping of the working area.
It is known a semiconductor converter, transforming beta radiation to electricity (RU 2452060, publ. 27.06.2014) wherein a semiconductor wafer having a textured surface in the form of multiple penetrating microchannels, the microchannels having round, oval, rectangular or other arbitrarily shape and the wall thickness h between microchannels is comparable with the width of microchannels. The surface of the microchannel walls as well as the front and rear surfaces of semiconductor wafer have microtextures, almost the entire semiconductor wafer surface except its side surface comprises a doped layer forming a p-n junction and a diode structure, doped layer is covered with a radioactive semiconductor layer acting as a current collecting contact in to the diode structure and is a beta radiation source, the doped layer and the bottom layer replicate the shape of the textured surface, and the contact to the base region of the semiconductor wafer is located on the side surface.
Disadvantages of the semiconductor converter are the complex technology of its production and filling of the penetrating channels with solid- state radioactive isotopes. Low quality of the textured surface of penetrating channels and hence intense leakage that do not allow achieving high specific power of the converter.
The prototype of the first object of this invention is a 3D structure of a semiconductor beta-voltaic converter, transforming radiation to electricity (US 20080199736, publ. 21.08.2008) wherein at the top surface of a low-doped n (p) conductivity type semiconductor wafer vertical are located channels, the surfaces of which comprise heavily doped p+{n+) regions forming vertical p-n junctions with the semiconductor wafer, the channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode) of the converter diode, and the bottom wafer surface a horizontal heavily doped n+(p+) contact layer is located the surface of which a metallic electrode of anode (cathode) is situated .
Disadvantages of the known structure are the low quality of the surface and hence the high level of reverse p- junction currents in the microchannels that do not allow achieving high specific power of the converter.
The prototype of the second subject of this invention is the method of fabricating a 3D structure of a semiconductor diode used as a beta-voltaic converter of the beta radiation of 63Ni isotope to electricity (US 20080199736, publ. 21.08.2008) which comprises the formation of a horizontal heavily doped n+(p+) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, doping of the channel wall surfaces, the deposition of radioactive isotope metal for electrode, i.e. anode (cathode), onto the top surface of the wafer and into the channels, and the deposition of a metal layer for electrode, i.e. anode (cathode), onto the bottom surface of the wafer.
Disadvantages of the known method are the complex and insufficiently reproducible technology of synthesizing p-n junctions in the channels reducing the efficiency of the converter and, most importantly, a high level of dark current (ID) of the bulk p-n junction dramatically reducing the idle voltage (Uid) of the converter and hence the maximum output power (Pmax) because
Pmax = Uid x Isc x FF
where Uid = φί x Ln (Isc / Is + 1), φΐ is the thermal potential and Isc is the short circuit current generated by the radioactive radiation.
Disclosure of the Invention. The technical result of the first subject of this invention is an increase in the energy Eu per unit volume of the converter due to the large emitting surface of the radioactive isotope (Sem) and hence the area of the bulk p-n junction (Spn>b).
The technical result of the first subject of this invention is achieved as follows.
The design of the ionizing radiation converter with cross-linked structure comprises a weakly doped n(p) conductivity type semiconductor wafer the bulk of which comprises vertical channels one end of which is connected to the wafer surface, and the channel wall surfaces comprise heavily doped p+{n+) conductivity type regions forming vertical p-n junctions with the semiconductor wafer.
The channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode), of the converter diode and the bottom surface of the wafer comprises a horizontal heavily doped n+(p+) conductivity type layer the surface of which comprises a metallic electrode, i.e. anode (cathode), of the converter.
The top surface of the wafer comprises a horizontal heavily doped p+(n+) conductivity type region forming a horizontal p-n junction. The surfaces of the vertical channels are low-doped and have the n(p) conductivity type, wherein
one end of each of the vertical channels is connected to the bottom wafer surface and the other end, i.e. the bottom of each of the vertical channels is at a distance from the top surface of the wafer, the distance being greater than the total depth of the horizontal p-n junction in the space charge region formed by it.
The technical result of the second subject of this invention includes a simplification of the converter fabrication technology.
The technical result of the second subject of this invention is achieved as follows.
The fabrication method comprises the formation of a horizontal heavily doped n+(p+) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, doping of the channel wall surfaces, the deposition of radioactive isotope metal for electrode, i.e. anode (cathode), onto the top surface of the wafer and into the channels, and the deposition of a metal layer for electrode, i.e. anode (cathode), onto the bottom surface of the wafer.
The vertical channels are formed by etching the bottom surfaces of the low-doped n(p) conductivity type wafer, following which the channel wall surfaces are doped with a donor (acceptor) impurity and a horizontal p-n junction is formed on the top surface of the wafer by doping with an acceptor (donor) impurity.
This invention will be now illustrated with figures showing converter design examples wherein Fig. 1 shows a section of the converter structure for the first structure example, Fig. 2 shows a bottom view of the converter structure for the first structure example, Fig. 3 shows a section of the converter structure for the second structure example and Fig. 4 shows a bottom view of the converter structure for the second structure example.
The design of the converter of this invention comprises a low-doped n(p) conductivity type semiconductor wafer (1), the bottom surface of the wafer
comprises an n+(p+) conductivity type contact layer (2), the wafer bulk comprises vertical channels (3) wherein one end of each of the vertical channels is connected to the bottom wafer surface, the top wafer surface comprises an n+(p+) conductivity type region (4) of a horizontal p-n junction wherein the region forms a space charge region (5) with the wafer, the surface of the n+(p+) conductivity type region comprises metallic radioactive isotope forming the anode (6) of the diode, and the bottom wafer surface and the channels comprise metallic radioactive isotope forming the cathode (7).
The operation principle of the converter of this invention is based on the ionization of the semiconducting material (e.g. silicon) by beta radiation of isotopes, e.g. nickel, tritium, strontium, cobalt etc.. The electron/hole pairs forming due to the irradiation are separated by the field of the p-n junction in the space charge region and produce a difference of potentials between the p+ and n regions of the converter (the photovoltaic EMF). Simultaneously, part of the electron/hole pairs can alternatively be accumulated by the field of the p-n junction in the quasi-neutral region at the diffusion length distance.
It has been shown that efficient (optimum) operation of the converter requires high-quality silicon in which the diffusion length of the minority carriers Ld is greater than the silicon wafer thickness, i.e. Ld > hw.
The distance between the channels must be greater than the beta radiation penetration depth for 63Ni isotope electrons the average energy of which is E = 17.5 keV.
Embodiments of the Invention. Different examples of beta converter design are possible that differ in their technical parameters. For example, the converter shown in Figs. 1&2 has the highest unit power but is quite expensive due to the large quantity of nickel in the channels. The converter shown in Figs. 3&4 requires far smaller quantity of 63Ni and is therefore cheaper while having a lower unit power.
The embodiments of converter design shown in Figs. 1-4 can be implemented in phosphorus doped silicon Grade KEF wafers with a 5 kOhmxcm resistivity, 100 mm diameter, hw = 420 μπι thickness, (100) orientation, carrier lifetime τ = 2 ms and diffusion length Ld > 1.0 cm.
The isotope source can be selected, for example, as 63Ni having a long half decay time of 50 years and emitting electron radiation with an average energy of 17 keV and a maximum energy of 64 keV which bears almost no hazard for health. This electron energy is lower than the defect formation energy in silicon which is 160 keV. The absorption depth of electrons with an average energy of 17 keV in silicon is approx. 3.0 μιη; for 90% absorption this depth is 12 μηι. These dimensions should be met by the design p-n junction depths and the space charge region size, and this is achievable for conventional silicon structures. It should be noted that other materials can alternatively be used as the radioactive isotope, e.g. tritium etc.. Also importantly, the radiation source can be not necessarily a beta radiation source but alternatively an alpha radiation
238
source, e.g. U with an average energy of 6 MeV and a silicon penetration depth of approx. 20-25 μηι, i.e. bearing no hazard for the p-n junction.
The fabrication method of the converter of this invention comprises the following sequence of process steps.
Thermal oxidation (to 0.6 μιη) of the surface of a silicon wafer batch with a 5 kOhmxcm resistivity, 100 mm diameter and (100) orientation, "0" lithography on the reverse side of the wafers, formation of vertical channels by reactive ion beam etching and phosphorus diffusion into the surface of the shelter.
1st lithography for the n protective regions on the top wafer surfaces, phosphorus diffusion and formation of n protective regions on the top (face) wafer surfaces and n contact layers on the bottom wafer surfaces.
2nd lithography and the formation of the p+ contact region by boron ion doping with the dose D = 600 μθ and the energy E = 30 keV, thermal annealing of the implanted impurity at T = 1050 °C for t = 40 min, growth of thermal oxide on the semiconductor wafer at T = 950 °C for t = 40 min, thickness 0.3 μιη.
3rd lithography of the p layer in the p-n junction formed by boron ion doping, thermal annealing of the implanted impurity at T = 950 °C for t = 40 min.
4th lithography of the contact windows to the p+ layer.
63Ni isotope deposition onto the top face surface of the wafers and the 5th lithography to form the anode electrode.
Thinning of the bottom wafer by chemomechanical polishing followed by electrolysis of radioactive 63Ni onto the bottom surface of the wafers and chipping of the wafers.
Noteworthy, there is a simpler embodiment of the process route, i.e. by photolithography of vertical channels at the end of the process route after 63Ni isotope deposition onto the top surface of the wafers. However, this option does not include the wafer thinning operation.
Experimental studies of silicon based converters with a cross-linked structure of the prototype and a planar design at a 63Ni isotope radiation power and a the dose power P = 2.7 mC/cm2 showed that the horizontal planar p-n junction with the area Spn.pi located on the polished top surface of the wafer has a low dark leakage current:
Id.pi = 0.5 nA/cm2
The leakage current of the equal area p-n junction formed in the channel is three orders of magnitude greater:
Iik.b = 1 μΑ
This corresponded to the idle voltage for the planar p-n junction Ujd.pi = 0.1 V and for the bulk p-n junction Uid.b = 4 mV:
Uid.pi = φί x Ln (Isc / Id + 1), = 0.026 χ Ln (27/0.5+1) = 0.1 V
Here φί is the thermal potential and Isc is the short circuit current generated by the radioactive radiation.
The converter power is determined by the following relationship:
For a planar p-n junction, Pmax.pi is 1.7 nW, and for a bulk p-n junction, Pmax.b is 0.08 nW.
The technical advantage of this invention are an increase in the unit power and the efficiency of the converter and a simplification and a lower price of its technology.
This is achieved through the design of the beta radiation converter and its technology which provides for the fundamental possibility of implementing the equivalent emitting power of the isotope surface at SjS as in the prototype having a 3D structure; however, the ionization current receiver is a horizontal (not vertical) p-n junction having a relatively small area (Sp-n, nsi) located on a high quality polished top surface of the wafer, this minimizing the dark current and increasing the idle voltage and hence the unit power of the converter.
Claims
1. Ionizing radiation converter with cross-linked structure containing a weakly doped n(p) conductivity type semiconductor wafer the bulk in which it is contained vertical channels which are created from top part to the wafer surface, and the channel wall surfaces with heavily doped p+(n+) conductivity type and the channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode), of the converter diode and the bottom surface of the wafer comprises a horizontal heavily doped n+(p+) conductivity type region forming a horizontal p-n junction and the top surface of the wafer comprises a horizontal heavily doped p+(n+) conductivity type region forming a horizontal p-n junction wherein the surfaces of the vertical channels are low-doped and have the n(p) conductivity type, further wherein one end of each of the vertical channels is connected to the bottom wafer surface and the other end, i.e. the bottom of each of the vertical channels is at a distance from the top surface of the wafer, the distance being greater than the total depth of the horizontal p-n junction in the space charge region formed by it.
2. Fabrication method comprising the formation of a horizontal heavily doped n+(p+) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, the channel wall surfaces doping, the radioactive isotope metal doping for anode (cathode) electrode, onto the top surface of the wafer and into the channels, and the deposition of a metal layer for of anode (cathode) electrode, onto the bottom surface of the wafer, wherein the vertical channels are formed by etching the top surface of the low-doped n(p) conductivity type semiconductor wafer, doping of the channel wall surfaces with a donor (acceptor) impurity and the formation of a horizontal p-n junction on the top surface of the wafer by doping with a donor (acceptor) impurity.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019541228A JP2020507073A (en) | 2017-01-31 | 2017-09-11 | Ionizing radiation converter having cross-linked structure and method of manufacturing the same |
| EA201900377A EA201900377A1 (en) | 2017-01-31 | 2017-09-11 | TRANSFORMER OF IONIZING RADIATIONS WITH A NET VOLUME STRUCTURE AND METHOD OF ITS PRODUCTION |
| CN201780089174.1A CN110494929A (en) | 2017-01-31 | 2017-09-11 | Ionizing radiation converter with cross-linked structure and manufacturing method thereof |
| DE112017006974.2T DE112017006974T5 (en) | 2017-01-31 | 2017-09-11 | Converter for ionizing radiation with a network structure and method for its production |
| KR1020197024967A KR102595089B1 (en) | 2017-01-31 | 2017-09-11 | Cross-linked ionizing radiation converter and method for manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2017103167A RU2659618C1 (en) | 2017-01-31 | 2017-01-31 | Converter of ionizing radiations with net bulk structure and method of its production |
| RU2017103167 | 2017-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018143838A1 true WO2018143838A1 (en) | 2018-08-09 |
Family
ID=62815832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2017/000663 Ceased WO2018143838A1 (en) | 2017-01-31 | 2017-09-11 | Ionizing radiation converter with cross-linked structure and its fabrication method |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2020507073A (en) |
| KR (1) | KR102595089B1 (en) |
| CN (1) | CN110494929A (en) |
| DE (1) | DE112017006974T5 (en) |
| EA (1) | EA201900377A1 (en) |
| RU (1) | RU2659618C1 (en) |
| WO (1) | WO2018143838A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113223743B (en) * | 2021-05-08 | 2023-10-20 | 西北核技术研究所 | Alpha radioactive source nuclear battery based on micropore array collimator |
| CN114203330B (en) * | 2021-12-13 | 2024-09-10 | 中国核动力研究设计院 | Ultrathin nickel-63 radiation source and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080199736A1 (en) * | 2007-02-16 | 2008-08-21 | Gadeken Larry L | Apparatus for generating electrical current from radioactive material and method of making same |
| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| RU2605783C1 (en) * | 2015-08-10 | 2016-12-27 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Тольяттинский государственный университет | Planar high-voltage photo- and beta-voltaic converter and method of making thereof |
| RU2608311C2 (en) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Optical and radiation converter and method of its making |
| RU2608313C2 (en) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | High-voltage converter of ionizing radiation and its manufacturing method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125988A (en) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | Solar cell element |
| US5642014A (en) * | 1995-09-27 | 1997-06-24 | Lucent Technologies Inc. | Self-powered device |
| US20040154656A1 (en) * | 2003-02-10 | 2004-08-12 | Science & Technology Corporation @ Unm | Nuclear radiation fueled power cells |
| US7138701B2 (en) * | 2003-10-02 | 2006-11-21 | International Business Machines Corporation | Electrostatic discharge protection networks for triple well semiconductor devices |
| CN100414719C (en) * | 2005-10-24 | 2008-08-27 | 西北工业大学 | Microbattery and method for making the same |
| US20100071751A1 (en) * | 2008-09-22 | 2010-03-25 | Electronics And Telecommunications Research Institute | Photo-induced metal-insulator-transition material complex for solar cell, solar cell and solar cell module comprising the same |
| RU2452060C2 (en) * | 2010-05-27 | 2012-05-27 | Виталий Викторович Заддэ | Beta radiation-to-electrical energy semiconductor converter |
| KR20120071241A (en) * | 2010-12-22 | 2012-07-02 | 한국전자통신연구원 | Apparatus for beta-battery and method of making same |
| CN102354540B (en) * | 2011-10-19 | 2013-08-14 | 西安电子科技大学 | I-layer vanadium-doped PIN-type atomic battery and manufacturing method thereof |
| US10699820B2 (en) * | 2013-03-15 | 2020-06-30 | Lawrence Livermore National Security, Llc | Three dimensional radioisotope battery and methods of making the same |
| RU2539109C1 (en) * | 2013-09-26 | 2015-01-10 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" | Multijunction silicone monocrystalline converter of optic and radiation emissions |
| CN104051050A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type alpha irradiation battery and preparing method thereof |
| CN105448376B (en) * | 2015-11-16 | 2017-11-03 | 长安大学 | Using the silicon carbide Schottky junction isotope battery and its manufacture method of αsource |
| RU168184U1 (en) * | 2016-04-22 | 2017-01-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) | PLANAR CONVERTER OF IONIZING RADIATIONS WITH ACCUMULATING CAPACITOR |
-
2017
- 2017-01-31 RU RU2017103167A patent/RU2659618C1/en active
- 2017-09-11 CN CN201780089174.1A patent/CN110494929A/en active Pending
- 2017-09-11 DE DE112017006974.2T patent/DE112017006974T5/en not_active Withdrawn
- 2017-09-11 EA EA201900377A patent/EA201900377A1/en unknown
- 2017-09-11 KR KR1020197024967A patent/KR102595089B1/en active Active
- 2017-09-11 WO PCT/RU2017/000663 patent/WO2018143838A1/en not_active Ceased
- 2017-09-11 JP JP2019541228A patent/JP2020507073A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| US20080199736A1 (en) * | 2007-02-16 | 2008-08-21 | Gadeken Larry L | Apparatus for generating electrical current from radioactive material and method of making same |
| RU2608311C2 (en) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Optical and radiation converter and method of its making |
| RU2608313C2 (en) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | High-voltage converter of ionizing radiation and its manufacturing method |
| RU2605783C1 (en) * | 2015-08-10 | 2016-12-27 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Тольяттинский государственный университет | Planar high-voltage photo- and beta-voltaic converter and method of making thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020507073A (en) | 2020-03-05 |
| KR20190109495A (en) | 2019-09-25 |
| KR102595089B1 (en) | 2023-10-26 |
| EA201900377A1 (en) | 2019-12-30 |
| CN110494929A (en) | 2019-11-22 |
| RU2659618C1 (en) | 2018-07-03 |
| DE112017006974T5 (en) | 2019-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8866152B2 (en) | Betavoltaic apparatus and method | |
| Bormashov et al. | High power density nuclear battery prototype based on diamond Schottky diodes | |
| US6774531B1 (en) | Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material | |
| US7939986B2 (en) | Betavoltaic cell | |
| Tang et al. | Optimization design and analysis of Si-63Ni betavoltaic battery | |
| US6949865B2 (en) | Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material | |
| JPH09127298A (en) | Self power source device | |
| US8937360B1 (en) | Beta voltaic semiconductor diode fabricated from a radioisotope | |
| CN108492905A (en) | A kind of diamond PIM Schottky types β radiation volta effect nuclear battery | |
| WO2018143838A1 (en) | Ionizing radiation converter with cross-linked structure and its fabrication method | |
| Krasnov et al. | Optimization of energy conversion efficiency betavoltaic element based on silicon | |
| Duggirala et al. | 3D silicon betavoltaics microfabricated using a self-aligned process for 5 milliwatt/cc average, 5 year lifetime microbatteries | |
| CN104051050A (en) | Parallel type PIN type alpha irradiation battery and preparing method thereof | |
| KR101617307B1 (en) | Beta voltaic battery and the preparation mehtod thereof | |
| RU168184U1 (en) | PLANAR CONVERTER OF IONIZING RADIATIONS WITH ACCUMULATING CAPACITOR | |
| RU2608058C1 (en) | Beta-voltaic semiconductor electric energy generator | |
| EA042001B1 (en) | IONIZING RADIATION CONVERTER WITH NETWORK VOLUME STRUCTURE AND METHOD FOR ITS MANUFACTURE | |
| RU2608313C2 (en) | High-voltage converter of ionizing radiation and its manufacturing method | |
| CN105448375B (en) | Using the carborundum PIN-type isotope battery and its manufacture method of αsource | |
| CN104051043B (en) | 3D type PIN structure alpha irradiation battery and manufacturing method thereof | |
| CN104051042B (en) | Parallel PIN-type β irradiation battery and preparation method thereof | |
| US9018721B1 (en) | Beta voltaic semiconductor photodiode fabricated from a radioisotope | |
| RU2599274C1 (en) | Ionizing radiations planar converter and its manufacturing method | |
| RU2605783C1 (en) | Planar high-voltage photo- and beta-voltaic converter and method of making thereof | |
| RU2608311C2 (en) | Optical and radiation converter and method of its making |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17894833 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2019541228 Country of ref document: JP Kind code of ref document: A |
|
| ENP | Entry into the national phase |
Ref document number: 20197024967 Country of ref document: KR Kind code of ref document: A |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 17894833 Country of ref document: EP Kind code of ref document: A1 |