[go: up one dir, main page]

WO2018027920A1 - Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau - Google Patents

Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau Download PDF

Info

Publication number
WO2018027920A1
WO2018027920A1 PCT/CN2016/094923 CN2016094923W WO2018027920A1 WO 2018027920 A1 WO2018027920 A1 WO 2018027920A1 CN 2016094923 W CN2016094923 W CN 2016094923W WO 2018027920 A1 WO2018027920 A1 WO 2018027920A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
nano material
cap
glass substrate
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/094923
Other languages
English (en)
Chinese (zh)
Inventor
伍燕锋
张建兵
何江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synae Microelectronics Co Ltd
Original Assignee
Synae Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Synae Microelectronics Co Ltd filed Critical Synae Microelectronics Co Ltd
Priority to PCT/CN2016/094923 priority Critical patent/WO2018027920A1/fr
Priority to CN201680003920.6A priority patent/CN107004750A/zh
Publication of WO2018027920A1 publication Critical patent/WO2018027920A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Definitions

  • a light hole 31 is formed in the cap 30, and an optical device 32 is mounted on the light exit hole 31.
  • Light emitting member 20 and optics The devices 32 are oppositely disposed, and the space between the two is filled with nitrogen or in a vacuum state.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention porte sur un dispositif électroluminescent à nanomatériau et sur un procédé de conditionnement pour le dispositif électroluminescent à nanomatériau. Le dispositif électroluminescent à nanomatériau comprend une base (10), un élément électroluminescent (20) disposé sur la base (10) et un capuchon de tube (30) monté sur la base (10). Un trou d'émergence de lumière (31) est disposé sur le capuchon de tube, un dispositif optique (32) est monté sur le trou d'émergence de lumière (31), un revêtement de filtration de lumière est disposé sur le dispositif optique (32), et le revêtement de filtrage de lumière est un revêtement de nanomatériau. Dans le dispositif électroluminescent à nanomatériau et le procédé de conditionnement pour le dispositif électroluminescent à nanomatériau, le dispositif optique (32) est monté sur le trou d'émergence de lumière (31) disposé sur le capuchon de tube (30) et le revêtement de nanomatériau sur le dispositif optique (32) et a les avantages d'un bon effet de filtrage de lumière et d'un taux d'utilisation d'énergie lumineuse élevé.
PCT/CN2016/094923 2016-08-12 2016-08-12 Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau Ceased WO2018027920A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2016/094923 WO2018027920A1 (fr) 2016-08-12 2016-08-12 Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau
CN201680003920.6A CN107004750A (zh) 2016-08-12 2016-08-12 纳米材料发光器件及纳米材料发光器件的封装方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2016/094923 WO2018027920A1 (fr) 2016-08-12 2016-08-12 Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau

Publications (1)

Publication Number Publication Date
WO2018027920A1 true WO2018027920A1 (fr) 2018-02-15

Family

ID=59431260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/094923 Ceased WO2018027920A1 (fr) 2016-08-12 2016-08-12 Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau

Country Status (2)

Country Link
CN (1) CN107004750A (fr)
WO (1) WO2018027920A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130313516A1 (en) * 2012-05-04 2013-11-28 Soraa, Inc. Led lamps with improved quality of light
CN103959490A (zh) * 2011-10-13 2014-07-30 英特曼帝克司公司 用于固态发光装置及灯的光致发光波长转换组件
WO2014154722A1 (fr) * 2013-03-26 2014-10-02 Koninklijke Philips N.V. Dispositif d'éclairage scellé hermétiquement avec un matériau luminescent et procédé de fabrication associé
CN104205375A (zh) * 2012-03-30 2014-12-10 皇家飞利浦有限公司 包括发光器件和波长转换材料的光学腔
CN104365181A (zh) * 2012-06-15 2015-02-18 欧司朗股份有限公司 光电子半导体器件
CN205881946U (zh) * 2016-08-12 2017-01-11 深圳通感微电子有限公司 纳米材料发光器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060038198A1 (en) * 2004-08-23 2006-02-23 Chua Janet B Y Device and method for producing output light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
CN201590434U (zh) * 2009-12-23 2010-09-22 北京瑞普北光电子有限公司 半导体红外发光二极管
US9412905B2 (en) * 2011-04-01 2016-08-09 Najing Technology Corporation Limited White light emitting device
CN102983245A (zh) * 2011-09-06 2013-03-20 青岛杰生电气有限公司 一种紫外发光二极管的封装结构

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103959490A (zh) * 2011-10-13 2014-07-30 英特曼帝克司公司 用于固态发光装置及灯的光致发光波长转换组件
CN104205375A (zh) * 2012-03-30 2014-12-10 皇家飞利浦有限公司 包括发光器件和波长转换材料的光学腔
US20130313516A1 (en) * 2012-05-04 2013-11-28 Soraa, Inc. Led lamps with improved quality of light
CN104365181A (zh) * 2012-06-15 2015-02-18 欧司朗股份有限公司 光电子半导体器件
WO2014154722A1 (fr) * 2013-03-26 2014-10-02 Koninklijke Philips N.V. Dispositif d'éclairage scellé hermétiquement avec un matériau luminescent et procédé de fabrication associé
CN205881946U (zh) * 2016-08-12 2017-01-11 深圳通感微电子有限公司 纳米材料发光器件

Also Published As

Publication number Publication date
CN107004750A (zh) 2017-08-01

Similar Documents

Publication Publication Date Title
CN102165611B (zh) 有涂层的发光器件及其涂覆方法
TWI680178B (zh) 量子點材料及其製備方法
TWI690750B (zh) 量子點顯示裝置
US20180138359A1 (en) Stratified Quantum Dot Phosphor Structure
CN109713026A (zh) 一种硅基电致发光显示面板及其制造方法、显示装置
KR20070029173A (ko) 진공 또는 불활성 가스가 패키징된 엘이디용 일체형 게터
KR101555954B1 (ko) 발광 다이오드의 색변환용 기판 및 그 제조방법
CN205452347U (zh) 一种支架型量子点led封装结构
TWI609504B (zh) 量子點封裝結構及其製備方法
WO2016026182A1 (fr) Procédé et structure d'encapsulation de diode électroluminescente organique (delo)
CN111187610A (zh) 复合量子点材料、制备方法及其显示装置
CN110048013B (zh) 显示基板、显示装置和显示基板的制造方法
CN108615805B (zh) 一种芯片级封装白光芯片及其封装方法
CN108417698A (zh) 量子点封装体及其制备方法、发光装置和显示装置
JP2017515310A (ja) 照明装置および照明装置を製造する方法
CN104576892A (zh) 波长转换膜、波长转换膜贴合结构及发光结构与其制法
WO2018027920A1 (fr) Dispositif électroluminescent à nanomatériau et procédé de conditionnement d'un dispositif électroluminescent à nanomatériau
CN209344074U (zh) 一种量子点led封装模组结构
JP2020129629A (ja) 光センサ装置およびその製造方法
CN108010907A (zh) 一种用于驱蚊的led灯及其制备方法
CN111554781B (zh) 磷光体施加前后发光器件的单个化
CN1973355A (zh) 用于真空或者不活泼气体封装的led的集成的吸气剂
CN106784240A (zh) 一种白光led器件的封装方法及其led器件及其led灯
CN108232035A (zh) 带有出气孔的封装结构
CN215377436U (zh) 发光装置、led灯珠、光源模组及led灯条

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16912375

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16912375

Country of ref document: EP

Kind code of ref document: A1