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WO2018009314A1 - Circuit intégré monolithique hyperfréquence (mmic) amplifié ayant une section de suppression des oscillations avec un trou d'interconnexion résistif - Google Patents

Circuit intégré monolithique hyperfréquence (mmic) amplifié ayant une section de suppression des oscillations avec un trou d'interconnexion résistif Download PDF

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Publication number
WO2018009314A1
WO2018009314A1 PCT/US2017/037375 US2017037375W WO2018009314A1 WO 2018009314 A1 WO2018009314 A1 WO 2018009314A1 US 2017037375 W US2017037375 W US 2017037375W WO 2018009314 A1 WO2018009314 A1 WO 2018009314A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ing
resistor
resistive
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2017/037375
Other languages
English (en)
Inventor
Istvan Rodriguez
Christopher M LAIGHTON
Alan J. Bielunis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/201,905 external-priority patent/US20170271281A1/en
Application filed by Raytheon Co filed Critical Raytheon Co
Priority to JP2018568814A priority Critical patent/JP2019525556A/ja
Priority to EP17734194.8A priority patent/EP3482494A1/fr
Priority to KR1020197003179A priority patent/KR20190025690A/ko
Publication of WO2018009314A1 publication Critical patent/WO2018009314A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10W20/023—
    • H10W20/0234—
    • H10W20/0242—
    • H10W20/20—
    • H10W44/20—
    • H10W44/401—
    • H10W20/498—
    • H10W72/5453—

Definitions

  • a resistive load such as Tantalum Nitride (TaN)
  • TaN Tantalum Nitride
  • a bias circuit is used to provide a FET used in the amplifier with a proper operating point.
  • the bias circuit includes: a Radio Frequency (RF) blocking choke; and a circuit having a dc blocking, or bypass, capacitor and shunt connected resistor.
  • the resistor sometimes referred to as a de-Q'ing resistor, is used to suppress or de-Q resonances that may be create between the choke and the bypass capacitor.
  • the bottom plate of the bypass capacitor (which is disposed on an upper surface of the MMIC chip is connected through one end of a resistor, also disposed on the upper surface of the chip.
  • the opposite end of the resistor is connected to the top of a conductive via which passes vertically though the chip to a ground plane conductor on the bottom surface of the chip as shown in FIGS. 2B and 2C.
  • a microwave amplifier having a field effect transistor formed on an upper surface of a substrate and a de-Q'ing section connected to the field effect transistor.
  • the de-Q'ing section includes: a de-Quing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.
  • a microwave amplifier is provided having: a substrate; a field effect transistor (FET), formed on an upper surface of the substrate and a de-Q'ing section connected to the field effect transistor.
  • FET field effect transistor
  • the hole provided by via 32 need not have a circular cross section but rather the cross section can take other shapes such as, for example, oval, rectangular, square, or other regular or irregular closed loop shape.
  • FIG. 4 an embodiment is shown where the vias 30' and 32' in FIG. 3B are formed using a laser to produce a cylindrical shaped vias. It is noted that the process steps described above in connection with FIGS. 2C through 21 would be used in processing the structure having cylindrical shaped vias to produce the structure shown in FIG. 4. It is also noted that the resistive material 34' and hence resistor 34 is hollow for both the structure shown in FIG. 3B and the structure shown in FIG. 4. Thus, here again a hollow resistor 34 is formed between the strip conductor 21a and the ground plane conductor 20, such resistor 34 having a length L and a thickness T.
  • the de-Q'ing capacitor section 52 includes a capacitor 76 having a top plate 77 connected to the Vdd bus through a microstrip transmission line 80 and a bottom plate 79 connected to one end of a de-Q'ing resistive via; the top plate 77 and bottom plate 79 being separated by a dielectric 81 (FIG. 5B).
  • the resistive via 78 is here, for example, TaN, and passes vertically through the chip 50 with the second end of the resistive via 78 being connected to the ground plane conductor 56.
  • the resistive via 78 is a hollow resistive via formed using the process described above in connection with FIGS. 3C through 31 and FIG. 4; it should be understood that the resistive via 78 may be a solid resistive material.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

Cette invention amplificateur hyperfréquence, comprenant un transistor à effet de champ formé sur une surface supérieure d'un substrat. Une section de suppression des oscillations connectée au transistor à effet de champ comprend : un trou d'interconnexion résistif qui passe à travers le substrat; et un condensateur de suppression des oscillations dont une plaque est connectée à un conducteur de plan de masse par l'intermédiaire du trou d'interconnexion résistif de suppression des oscillations.
PCT/US2017/037375 2016-07-05 2017-06-14 Circuit intégré monolithique hyperfréquence (mmic) amplifié ayant une section de suppression des oscillations avec un trou d'interconnexion résistif Ceased WO2018009314A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018568814A JP2019525556A (ja) 2016-07-05 2017-06-14 抵抗性ビアを備えたデキューイングセクションを有しながら増幅されるマイクロ波モノリシック集積回路（ｍｍｉｃ）
EP17734194.8A EP3482494A1 (fr) 2016-07-05 2017-06-14 Circuit intégré monolithique hyperfréquence (mmic) amplifié ayant une section de suppression des oscillations avec un trou d'interconnexion résistif
KR1020197003179A KR20190025690A (ko) 2016-07-05 2017-06-14 저항성 비아와 함께 디-큐잉 섹션을 갖는 증폭된 마이크로파 모놀리식 집적 회로(mmic)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/201,905 2016-07-05
US15/201,905 US20170271281A1 (en) 2016-03-21 2016-07-05 Microwave Monolithic Integrated Circuit (MMIC) Amplified Having de-Q'ing Section With Resistive Via

Publications (1)

Publication Number Publication Date
WO2018009314A1 true WO2018009314A1 (fr) 2018-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/037375 Ceased WO2018009314A1 (fr) 2016-07-05 2017-06-14 Circuit intégré monolithique hyperfréquence (mmic) amplifié ayant une section de suppression des oscillations avec un trou d'interconnexion résistif

Country Status (4)

Country Link
EP (1) EP3482494A1 (fr)
JP (1) JP2019525556A (fr)
KR (1) KR20190025690A (fr)
WO (1) WO2018009314A1 (fr)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164704A (ja) * 1986-12-26 1988-07-08 Matsushita Electric Ind Co Ltd モノリシツクマイクロ波集積回路増幅器
JPS63224508A (ja) * 1987-03-13 1988-09-19 Matsushita Electric Ind Co Ltd モノリシツクマイクロ波集積回路多段増幅器
JPH0195602A (ja) * 1987-10-08 1989-04-13 Nec Corp チップ化モジュール
US4864250A (en) * 1987-01-29 1989-09-05 Harris Corporation Distributed amplifier having improved D.C. biasing and voltage standing wave ratio performance
JPH06151714A (ja) * 1992-11-09 1994-05-31 Fujitsu Ltd 能動デバイスのバイアス電圧供給回路
JPH09307060A (ja) * 1996-05-16 1997-11-28 Nec Eng Ltd マイクロ波半導体集積回路
JPH1093019A (ja) * 1996-09-11 1998-04-10 Denso Corp モノリシックマイクロ波集積回路
US20020020894A1 (en) * 2000-08-15 2002-02-21 Masaaki Nishijima RF passive circuit and RF amplifier with via-holes
US7176769B1 (en) * 2004-11-29 2007-02-13 Hrl Laboratories, Llc Harmonic termination circuit for medium bandwidth microwave power amplifiers
JP2012209907A (ja) * 2011-03-30 2012-10-25 Furukawa Electric Co Ltd:The 帰還型発振装置
US8653907B2 (en) * 2011-07-18 2014-02-18 Raytheon Company Resonated bypass capacitor for enhanced performance of a microwave circuit
WO2016069134A1 (fr) * 2014-10-31 2016-05-06 Raytheon Company Réseau d'adaptation de sortie ayant un seul composant condensateur combiné en série et shunt

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04298106A (ja) * 1991-03-27 1992-10-21 Toshiba Lighting & Technol Corp マイクロ波混成集積回路
JP3761729B2 (ja) * 1998-12-25 2006-03-29 株式会社ルネサステクノロジ バイアス回路
JP5547048B2 (ja) * 2010-12-06 2014-07-09 株式会社東芝 電力増幅器用バイアス回路
JP2013118580A (ja) * 2011-12-05 2013-06-13 Mitsubishi Electric Corp 高周波増幅器
JP2015233084A (ja) * 2014-06-10 2015-12-24 株式会社日立製作所 チップモジュールおよび情報処理機器

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164704A (ja) * 1986-12-26 1988-07-08 Matsushita Electric Ind Co Ltd モノリシツクマイクロ波集積回路増幅器
US4864250A (en) * 1987-01-29 1989-09-05 Harris Corporation Distributed amplifier having improved D.C. biasing and voltage standing wave ratio performance
JPS63224508A (ja) * 1987-03-13 1988-09-19 Matsushita Electric Ind Co Ltd モノリシツクマイクロ波集積回路多段増幅器
JPH0195602A (ja) * 1987-10-08 1989-04-13 Nec Corp チップ化モジュール
JPH06151714A (ja) * 1992-11-09 1994-05-31 Fujitsu Ltd 能動デバイスのバイアス電圧供給回路
JPH09307060A (ja) * 1996-05-16 1997-11-28 Nec Eng Ltd マイクロ波半導体集積回路
JPH1093019A (ja) * 1996-09-11 1998-04-10 Denso Corp モノリシックマイクロ波集積回路
US20020020894A1 (en) * 2000-08-15 2002-02-21 Masaaki Nishijima RF passive circuit and RF amplifier with via-holes
US7176769B1 (en) * 2004-11-29 2007-02-13 Hrl Laboratories, Llc Harmonic termination circuit for medium bandwidth microwave power amplifiers
JP2012209907A (ja) * 2011-03-30 2012-10-25 Furukawa Electric Co Ltd:The 帰還型発振装置
US8653907B2 (en) * 2011-07-18 2014-02-18 Raytheon Company Resonated bypass capacitor for enhanced performance of a microwave circuit
WO2016069134A1 (fr) * 2014-10-31 2016-05-06 Raytheon Company Réseau d'adaptation de sortie ayant un seul composant condensateur combiné en série et shunt

Also Published As

Publication number Publication date
EP3482494A1 (fr) 2019-05-15
JP2019525556A (ja) 2019-09-05
KR20190025690A (ko) 2019-03-11

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