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WO2018061356A1 - Vibreur piézoélectrique, procédé de fabrication de vibreur piézoélectrique et dispositif de réglage - Google Patents

Vibreur piézoélectrique, procédé de fabrication de vibreur piézoélectrique et dispositif de réglage Download PDF

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Publication number
WO2018061356A1
WO2018061356A1 PCT/JP2017/023177 JP2017023177W WO2018061356A1 WO 2018061356 A1 WO2018061356 A1 WO 2018061356A1 JP 2017023177 W JP2017023177 W JP 2017023177W WO 2018061356 A1 WO2018061356 A1 WO 2018061356A1
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Prior art keywords
package
piezoelectric vibrator
resonance frequency
heating
crystal
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PCT/JP2017/023177
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English (en)
Japanese (ja)
Inventor
山本　裕之
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details

Definitions

  • the present invention relates to a piezoelectric vibrator, a piezoelectric vibrator manufacturing method, and an adjusting device.
  • a crystal vibrator (Quartz Crystal Unit) described in Patent Document 1 As an invention related to a conventional piezoelectric vibrator, for example, a crystal vibrator (Quartz Crystal Unit) described in Patent Document 1 is known.
  • the crystal resonator described in Patent Document 1 includes a pair of excitation electrodes, a crystal piece (Quartz Crystal Blank), a container, a frequency adjusting material, and a transmission window.
  • the crystal piece is sandwiched between a pair of excitation electrodes.
  • the crystal piece and the pair of excitation electrodes are housed in a container.
  • the frequency adjusting material is provided on the inner wall of the container.
  • the transmission window is provided in the container and transmits heat rays to be described later.
  • Patent Document 1 In the crystal resonator described in Patent Document 1 as described above, after sealing the container, the frequency adjusting material is irradiated with heat rays from the outside of the container through the transmission window. As a result, the frequency adjusting material evaporates and adheres to the excitation electrode. As a result, the weight of the excitation electrode increases, and the resonance frequency of the crystal resonator decreases. As described above, in the crystal resonator disclosed in Patent Document 1, it is possible to adjust the resonance frequency of the crystal resonator after the container is sealed. Patent Document 2 and Patent Document 3 also describe adjusting the resonance frequency of a piezoelectric device or a piezoelectric vibrator by a method similar to the method described in Patent Document 1.
  • the frequency adjusting material is heated by irradiating heat rays. Therefore, a transmission window for transmitting heat rays is provided in the container.
  • the existence of such a transmission window may cause a problem as described below, for example.
  • Such a joint portion is closed by, for example, an adhesive.
  • the adhesive deteriorates over time, the hermeticity of the container may decrease.
  • the piezoelectric device described in Patent Document 2 and the piezoelectric vibrator described in Patent Document 3 also have the same problems as the crystal vibrator described in Patent Document 1.
  • an object of the present invention is to provide a piezoelectric vibrator, a piezoelectric vibrator manufacturing method, and an adjusting device that can adjust the resonance frequency of the piezoelectric vibrator after sealing the package without providing a transmission window in the package. It is.
  • a piezoelectric vibrator includes a substrate, a lid, and a bonding material that joins the substrate and the lid, and a package that is a sealed container; a piezoelectric piece that is provided in the package; and A piezoelectric vibration element including a first excitation electrode and a second excitation electrode; a piezoelectric vibration element that is provided in the package so as not to contact the piezoelectric vibration element; and the first excitation electrode and the first excitation electrode.
  • a metal member having a melting point lower than that of the excitation electrode material, and the inside of the package is shielded from light.
  • a method for manufacturing a piezoelectric vibrator is a method for manufacturing a piezoelectric vibrator including a piezoelectric vibration element, a metal member, and a package, and sealing the package containing the piezoelectric vibration element and the metal member.
  • An adjustment device is an adjustment device that adjusts a resonance frequency of a piezoelectric vibrator including a package that is a sealed container, a piezoelectric vibration element housed in the package, and a metal member. By heating the metal member by heat conduction from the package and depositing the metal member on the piezoelectric vibration element, so that the resonance frequency of the piezoelectric vibrator approaches the target resonance frequency. And a control unit for controlling the heating unit.
  • the resonance frequency of the piezoelectric vibrator can be adjusted after sealing the package without providing a transmission window in the package.
  • FIG. 1 is an external perspective view of the crystal unit 10.
  • FIG. 2 is an exploded perspective view of the crystal unit 10.
  • FIG. 3 is a cross-sectional structural view taken along line AA in FIG.
  • FIG. 4 is a block diagram of the adjustment device 300.
  • FIG. 5 is a flowchart showing a method for manufacturing the crystal unit 10.
  • FIG. 6 is a diagram showing the weight of the crystal resonator element in each step in the conventional method for manufacturing a crystal resonator.
  • FIG. 7 is a view showing the weight of the crystal resonator element 16 in the method for manufacturing the crystal unit 10.
  • FIG. 8 is a cross-sectional structure diagram of the crystal resonator 10a according to the first modification.
  • FIG. 9 is a cross-sectional structure diagram of a crystal resonator 10b according to a second modification.
  • FIG. 10 is a cross-sectional structure diagram of a crystal resonator 10c according to a third modification.
  • FIG. 11 is a block diagram of an adjusting device 300a used in the method for manufacturing the crystal resonator 10 according to the first modification.
  • FIG. 12 is a flowchart showing a method for manufacturing the crystal unit 10 according to the first modification.
  • FIG. 13 is a block diagram of an adjusting device 300b used in the method for manufacturing the crystal resonator 10 according to the second modification.
  • FIG. 14 is a flowchart showing a method for manufacturing the crystal unit 10 according to the second modification.
  • FIG. 1 is an external perspective view of the crystal unit 10.
  • FIG. 2 is an exploded perspective view of the crystal unit 10.
  • FIG. 3 is a cross-sectional structural view taken along line AA in FIG.
  • the normal direction to the main surface of the crystal unit 10 is defined as the vertical direction, and the direction in which the long side of the crystal unit 10 extends when viewed from above is the front-rear direction (or the long side direction).
  • the direction in which the short side of the crystal unit 10 extends is defined as the left-right direction (or the short side direction).
  • the crystal resonator 10 includes a package 11, a crystal resonator element 16, and a metal member 150, and is an example of a piezoelectric resonator.
  • the left-right width of the crystal unit 10 is, for example, 1.6 mm.
  • the length before and after the crystal unit 10 is, for example, 2.0 mm.
  • the package 11 is a sealed container having a rectangular parallelepiped shape including the substrate 12, the lid 14, and the bonding material 50.
  • the package 11 has a space Sp isolated from the outside.
  • the package 11 has an airtight structure and a liquidtight structure. Therefore, gas and liquid cannot go back and forth between the outside of the package 11 and the space Sp.
  • the package 11 may have a liquid-tight structure without an air-tight structure. That is, the liquid may not be able to travel between the outside of the package 11 and the space Sp, and the gas may be able to travel between the outside of the package 11 and the space Sp.
  • the package 11 is made of a non-transmissive member that does not transmit light, as will be described later. Therefore, light cannot be inserted from outside the package 11 into the space Sp. That is, the inside of the package 11 is shielded from light.
  • the substrate 12 includes a substrate body 21, external electrodes 22, 26, 40, 42, 44, 46, via-hole conductors 25, 28, 54, 56 and a metallized film 30.
  • the substrate body 21 has a plate-like structure and has a rectangular structure when viewed from above. Therefore, the substrate body 21 has a rectangular upper surface and lower surface.
  • a rectangle means a square.
  • the term “rectangular shape” means to include a shape slightly deformed from a rectangle in addition to the rectangle.
  • the substrate body 21 includes, for example, an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a ceramic insulating material such as a glass ceramic sintered body, crystal, glass It is made of silicon or the like.
  • the substrate body 21 has a structure in which a plurality of insulator layers made of a ceramic material are stacked.
  • the external electrode 22 is a rectangular conductor layer provided near the left rear corner of the upper surface of the substrate body 21.
  • the external electrode 26 is a rectangular conductor layer provided near the right rear corner of the upper surface of the substrate body 21.
  • the external electrode 22 and the external electrode 26 are arranged in the left-right direction.
  • the external electrode 40 is a square-shaped conductor layer provided in the vicinity of the right rear corner of the lower surface of the substrate body 21 and overlaps the external electrode 26 when viewed from above.
  • the external electrode 42 is a square conductor layer provided in the vicinity of the left rear corner of the lower surface of the substrate body 21, and overlaps the external electrode 22 when viewed from above.
  • the external electrode 44 is a square conductor layer provided near the right front corner of the lower surface of the substrate body 21.
  • the external electrode 46 is a square conductor layer provided in the vicinity of the left front corner of the lower surface of the substrate body 21.
  • the via-hole conductor 25 penetrates the substrate body 21 in the vertical direction, and connects the external electrode 22 and the external electrode 42.
  • the via-hole conductor 28 penetrates the substrate body 21 in the vertical direction, and connects the external electrode 26 and the external electrode 40.
  • the metallized film 30 is a linear metal film provided on the upper surface of the substrate body 21 and has a rectangular annular structure when viewed from the upper side (normal direction to the upper surface).
  • the external electrodes 22 and 26 are provided in a region surrounded by the metallized film 30 when viewed from above.
  • the via-hole conductor 54 penetrates the substrate body 21 in the vertical direction, and connects the metallized film 30 and the external electrode 46.
  • the via-hole conductor 56 penetrates the substrate main body 21 in the vertical direction, and connects the metallized film 30 and the external electrode 44.
  • the external electrodes 22, 26, 40, 42, 44, 46 and the metallized film 30 have a three-layer structure. Specifically, a molybdenum layer, a nickel layer, and a gold layer are stacked from the lower layer side to the upper layer side. Is configured.
  • the via-hole conductors 25, 28, 54, and 56 are produced by burying a conductor such as molybdenum in a via hole formed in the substrate body 21.
  • the lid 14 is a casing having a rectangular opening and is also called a metal cap.
  • the lid 14 is produced, for example, by applying nickel plating and gold plating to a base material of an iron nickel alloy or a cobalt nickel alloy.
  • the lid 14 is a rectangular parallelepiped box having an opening on the lower side, and is produced by applying nickel plating and gold plating to the surface of the base material of the iron-nickel alloy.
  • the bonding material 50 bonds the lid 14 and the substrate 12 and is disposed on the metallized film 30.
  • the bonding material 50 has substantially the same shape as the metallized film 30 and has a rectangular annular structure.
  • the bonding material 50 has a melting point lower than that of the metallized film 30 and is made of, for example, a gold-tin alloy.
  • the bonding material 50 is formed on the metallized film 30 by printing or the like, for example. Then, the metallized film 30 is melted and solidified in a state where the outer edge of the opening of the lid 14 is in contact with the bonding material 50. Accordingly, the lid 14 is bonded to the metallized film 30 via the bonding material 50 over the entire length of the outer edge of the opening.
  • a space Sp is formed by the upper surface of the substrate body 21 and the lid 14. Further, the space Sp is kept in a vacuum state by the lid 14 being in close contact with the substrate body 21 through the metallized film 30 and the bonding material 50. However, the space Sp may be in an atmospheric state. Instead of the bonding material 50, for example, an adhesive such as low-melting glass or resin may be used. In this case, the metallized film 30 is not necessary.
  • a quartz resonator element 16 is provided in the package 11.
  • the crystal resonator element 16 includes a crystal piece 17, external electrodes 97 and 98, excitation electrodes 100 and 101, and lead conductors 102 and 103, and is an example of a piezoelectric resonator element.
  • the crystal piece 17 has a plate-like structure having an upper surface (an example of a first main surface) and a lower surface (an example of a second main surface), and has a rectangular structure when viewed from above. ing.
  • the crystal piece 17 is an example of a piezoelectric piece. Therefore, a piezoelectric ceramic piece may be used as the piezoelectric piece instead of the crystal piece 17.
  • the crystal piece 17 is, for example, an AT-cut type crystal piece cut out from a rough crystal or the like at a predetermined angle.
  • the size of the crystal piece 17 is a size that fits in a range where the length in the front-rear direction is 2.0 mm and the width in the left-right direction is 1.6 mm. Taking into account the package wall thickness, bleeding of the sealing material, device mounting accuracy, etc., the length of the crystal piece 17 in the front-rear direction is 1.500 mm or less, and the width of the crystal piece 17 in the left-right direction is 1.00 mm
  • the crystal piece 17 is designed to be as follows.
  • the external electrode 97 is a conductor layer provided at the left rear corner of the crystal piece 17 and in the vicinity thereof.
  • the external electrode 97 is formed across the upper surface, the lower surface, the rear surface, and the left surface.
  • the external electrode 98 is a conductor layer provided at the right rear corner of the crystal piece 17 and in the vicinity thereof.
  • the external electrode 98 is formed across the upper surface, the lower surface, the rear surface, and the right surface.
  • the external electrodes 97 and 98 are arranged along the short side of the crystal piece 17.
  • the excitation electrode 100 (an example of the first excitation electrode) is provided at the center of the upper surface of the crystal piece 17 and has a rectangular structure when viewed from above.
  • the excitation electrode 101 is provided at the center of the lower surface of the crystal piece 17 and has a rectangular structure when viewed from above.
  • the excitation electrode 100 and the excitation electrode 101 overlap with each other when viewed from above.
  • the lead conductor 102 (an example of the second excitation electrode) is provided on the upper surface of the crystal piece 17 and connects the external electrode 97 and the excitation electrode 100.
  • the lead conductor 103 is provided on the lower surface of the crystal piece 17 and connects the external electrode 98 and the excitation electrode 101.
  • the external electrodes 97 and 98, the excitation electrodes 100 and 101, and the lead conductors 102 and 103 have a two-layer structure. Specifically, a chromium layer and a gold layer are laminated from the lower layer side to the upper layer side. It is comprised by.
  • the crystal resonator element 16 is mounted on the upper surface of the substrate 12. Specifically, the external electrode 22 and the external electrode 97 are fixed in a state where they are electrically connected by the conductive adhesive 210, and the external electrode 26 and the external electrode 98 are electrically connected by the conductive adhesive 212. It is fixed in the state that was done.
  • the metal member 150 is provided in the package 11 so as not to contact the crystal resonator element 16. Furthermore, as shown in FIG. 3, the metal member 150 does not overlap the crystal piece 17 when viewed from the upper side (when viewed from the normal direction of the first main surface). In the present embodiment, the metal member 150 is provided on the upper surface of the substrate 12 and is located in a region adjacent to the front side with respect to the crystal resonator element 16 when viewed from above.
  • the metal member 150 has a lower melting point than the materials (chromium and gold) of the excitation electrodes 100 and 101, and is made of, for example, tin, an alloy containing tin, or an oxide containing tin. . Chromium has a melting point of 1903 ° C. and gold has a melting point of 1064 ° C. Therefore, the melting point of the metal member 150 should just be lower than 1064 degreeC, Preferably it is about 280 degreeC.
  • the metal member 150 must not melt when the crystal unit 10 is used. Therefore, the melting point of the metal member 150 needs to be higher than the temperature in the environment in which the crystal unit 10 is used (hereinafter, environmental temperature).
  • the environmental temperature varies depending on the use of the crystal unit 10. For example, when the crystal unit 10 is used in an automobile, the environmental temperature is 120 ° C. or higher and 125 ° C. or lower. Therefore, when the crystal unit 10 is used in an automobile, the melting point of the metal member 150 is higher than 125 ° C.
  • the metal member 150 is used to adjust the resonance frequency f of the crystal resonator 10 as will be described later. Specifically, when the resonance frequency f of the crystal resonator 10 is higher than the target resonance frequency ft, the metal member 150 is heated and vapor-deposited on the crystal resonator element 16 with the package 11 sealed. As a result, the weight of the crystal resonator element 16 increases and the resonance frequency f of the crystal resonator 10 decreases. Therefore, in the crystal resonator 10 in which the resonance frequency f is adjusted, a metal film (not shown) having the same composition as the metal member 150 is formed on the surface of the crystal resonator element 16. Further, since not all of the metal member 150 is deposited on the crystal resonator element 16, the metal member 150 remains on the upper surface of the substrate 12 even after the resonance frequency f is adjusted.
  • FIG. 4 is a block diagram of the adjustment device 300.
  • the adjustment device 300 is a device for adjusting the resonance frequency f of the crystal resonator 10.
  • the adjustment device 300 includes a heating device 302, a control unit 308, a storage unit 310, and a measurement unit 312.
  • the heating device 302 includes a heating unit 304 and a furnace 306.
  • the furnace 306 is a container that can accommodate a plurality of crystal resonators 10.
  • the furnace 306 serves to confine heat.
  • the heating unit 304 is provided in the furnace 306 and heats the package 11 of the crystal unit 10.
  • the heating unit 304 may heat the package 11 by heat radiation.
  • Thermal radiation is the transfer of heat via electromagnetic waves.
  • the heating unit 304 is a heater.
  • the heating unit 304 emits electromagnetic waves, and the package 11 absorbs the electromagnetic waves, whereby the package 11 is heated.
  • the heating unit 304 may heat the package 11 by heat conduction.
  • Thermal conduction is the transfer of heat through atomic vibrations. Examples of such a heating method include the following first and second examples.
  • the heating unit 304 is in contact with the package 11, and the heat generated by the heating unit 304 is directly transmitted to the package 11.
  • air around the heating unit 304 is heated by the heating unit 304, and air heated by a fan or the like is sent to the package 11, whereby heat of the air is transmitted to the package 11.
  • the metal member 150 is heated by heat conduction from the package 11. As a result, the metal member 150 adheres to the surface of the crystal resonator element 16 after being evaporated. In other words, the metal member 150 is deposited on the surface of the crystal resonator element 16.
  • the heating of the metal member 150 is mainly performed by heat conduction from the package 11.
  • part of the heating of the metal member 150 may be performed by heat radiation from the heating unit 304.
  • the amount of heat that the metal member 150 receives by heat conduction is much larger than the amount of heat that the metal member 150 receives by heat radiation.
  • “the metal member 150 is heated by heat conduction from the package 11” means that the amount of heat received by the metal member 150 by heat conduction is much larger than the amount of heat received by the metal member 150 by heat radiation.
  • the fact that the metal member 150 is heated by thermal radiation by irradiating the metal member 150 with the laser beam includes that “the metal member 150 is heated by heat conduction from the package 11”. Shall not.
  • the measuring unit 312 measures the resonance frequency f of the crystal unit 10 before being put into the furnace 306. Specifically, the measurement unit 312 applies a predetermined voltage or current, and measures the resonance frequency f of the crystal resonator 10. Then, the measurement unit 312 detects the signal output from the crystal unit 10 and determines the frequency at which the signal intensity is maximum as the resonance frequency f of the crystal unit 10.
  • the storage unit 310 stores the table shown in Table 1.
  • the table in Table 1 shows the relationship between the difference ⁇ f and the heating time T.
  • the difference ⁇ f is a value obtained by subtracting the target resonance frequency ft from the resonance frequency f of the crystal resonator 10.
  • the heating time T is set to increase as the difference ⁇ f increases. That is, as the difference ⁇ f increases, the amount of the metal member 150 attached to the crystal resonator element 16 increases.
  • the control unit 308 controls the heating unit 304 based on the resonance frequency f measured by the measurement unit 312 so that the resonance frequency f of the crystal resonator 10 approaches the target resonance frequency ft. That is, the control unit 308 heats the package 11 using the heating unit 304 under the heating condition determined by the resonance frequency f. In the present embodiment, the control unit 308 subtracts the resonance frequency ft from the resonance frequency f to obtain the difference ⁇ f. The control unit 308 refers to the table in Table 1 and acquires the heating time T corresponding to the difference ⁇ f. Then, the control unit 308 causes the heating unit 304 to heat the crystal unit 10 over the heating time T. In the adjusting device 300 of the present embodiment, the heating temperature is constant regardless of the heating time T. The heating temperature is higher than the environmental temperature, and is 180 ° C., for example. However, the control unit 308 may change both the heating time T and the heating temperature according to the difference ⁇ f, or may change the heating temperature without changing the heating time T.
  • FIG. 5 is a flowchart showing a method for manufacturing the crystal unit 10.
  • the mother substrate in which a plurality of substrate bodies 21 are arranged in a matrix is prepared.
  • the mother substrate may be, for example, an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a ceramic insulating material such as a glass ceramic sintered body, crystal, glass, It is made of silicon or the like.
  • a beam is irradiated to the position where the via-hole conductors 25, 28, 54, 56 of the substrate body 21 are formed to form a through hole. Further, the through hole is filled with a conductive material such as molybdenum and dried. Thereafter, the via-hole conductors 25, 28, 54, and 56 are formed by sintering the conductive material.
  • base electrodes of the external electrodes 40, 42, 44, 46 are formed on the lower surface of the mother substrate. Specifically, a molybdenum layer is printed on the lower surface of the mother substrate and dried. Thereafter, the molybdenum layer is sintered. As a result, the base electrodes of the external electrodes 40, 42, 44, 46 are formed.
  • the base electrodes of the external electrodes 22 and 26 and the metallized film 30 are formed on the upper surface of the mother substrate. Specifically, a molybdenum layer is printed on the upper surface of the mother substrate and dried. Thereafter, the molybdenum layer is sintered. Thereby, the base electrodes of the external electrodes 22 and 26 and the metallized film 30 are formed.
  • the filling of the conductive material into the through holes and the printing of the external electrodes and the like on the mother substrate can be simultaneously formed by using vacuum printing or the like. At this time, the conductive material and the external electrode are fired simultaneously.
  • the mother substrate is divided into a plurality of substrate bodies 21 by a dicer.
  • the mother substrate may be divided into a plurality of substrate bodies 21 after the laser beam is irradiated to form the division grooves in the mother substrate.
  • the substrate 12 is completed.
  • the crystal resonator element 16 is produced.
  • the quartz crystal ore is cut out by AT cut to obtain a rectangular plate-like crystal piece 17. Furthermore, if necessary, bevel processing is performed on the crystal piece 17 using a barrel processing apparatus. Thereby, the vicinity of the ridgeline of the crystal piece 17 is scraped off.
  • external electrodes 97 and 98, excitation electrodes 100 and 101, and lead conductors 102 and 103 are formed on the crystal piece 17. Note that the formation of the external electrodes 97 and 98, the excitation electrodes 100 and 101, and the lead conductors 102 and 103 is a general process and will not be described. Thereby, the crystal resonator element 16 is completed.
  • the crystal resonator element 16 is mounted on the upper surface of the substrate body 21 (step S1). Specifically, as shown in FIGS. 2 and 3, the external electrode 22 and the external electrode 97 are bonded by the conductive adhesive 210, and the external electrode 26 and the external electrode 98 are bonded by the conductive adhesive 212. To do.
  • the metal member 150 is attached on the upper surface of the substrate body 21 (step S2).
  • the metal member 150 is fixed to the upper surface of the substrate body 21 with, for example, an adhesive.
  • step S3 sealing process.
  • the lid 14 is disposed on the substrate 12 so that the outer edge of the opening of the lid 14 is positioned on the bonding material 50 in a vacuum state.
  • the bonding material 50 is melted by heating the lid 14 and the substrate 12 to 280 ° C., for example. Thereafter, the bonding material 50 is solidified by cooling the lid 14 and the substrate 12. Thereby, the package 11 is sealed.
  • the measurement unit 312 measures the resonance frequency f of the crystal unit 10 (step S4: first measurement step).
  • the measurement unit 312 measures the resonance frequency f of the crystal resonator 10 after the package 11 is sealed and before the package 11 is heated. Since the method for measuring the resonance frequency f has already been described, further description is omitted. Thereby, the control unit 308 acquires the resonance frequency f of the crystal resonator 10.
  • control unit 308 calculates the difference ⁇ f by subtracting the target resonance frequency ft from the resonance frequency f (step S5). Further, the control unit 308 refers to the table of Table 1 stored in the storage unit 310 and determines the heating time T corresponding to the difference ⁇ f (step S6).
  • the crystal unit 10 for which the measurement of the resonance frequency f has been completed is put into the furnace 306.
  • a plurality of crystal resonators 10 determined to have the same heating time T may be put together into the furnace 306.
  • the control unit 308 causes the heating unit 304 to heat the package 11 under a heating condition determined by the resonance frequency f (step S7: heating process).
  • the control unit 308 controls the heating unit 304 to heat the plurality of crystal units 10 over the heating time T.
  • the metal member 150 is deposited on the surface of the crystal resonator element 16, and the resonance frequency f of the crystal resonator 10 approaches the target resonance frequency ft. Since the details of heating have already been described, further description is omitted.
  • the measurement unit 312 measures the resonance frequency f of the crystal unit 10 (step S8: second measurement process).
  • step S8 it is confirmed whether or not the resonance frequency f of the crystal resonator 10 has reached the target resonance frequency ft.
  • the package 11 may be heated again or the crystal unit 10 may be discarded.
  • the resonance frequency f becoming the resonance frequency ft includes not only the case where the resonance frequency f coincides with the resonance frequency ft but also the case where the resonance frequency f falls within a certain range from the resonance frequency ft. The certain range is a tolerance of the crystal unit 10.
  • the resonance frequency f of the crystal unit 10 is adjusted after the package 11 is sealed without providing a transmission window in the package 11. can do. More specifically, in the crystal unit 10, the manufacturing method of the crystal unit 10, and the adjustment device 300, the metal member 150 is heated by heat conduction from the package 11 by heating the package 11, and the metal member 150 is crystallized. Vapor deposition is performed on the vibration element 16. Therefore, the metal member 150 is not heated by irradiating the metal member 150 with the laser beam. Therefore, a transmission window for transmitting the laser beam to the package 11 becomes unnecessary.
  • the package 11 can be manufactured by a non-transmissive member that does not transmit light. Therefore, the inside of the package 11 is shielded from light. As a result, the structure in the package 11 such as the crystal resonator element 16 and the conductive adhesives 210 and 212 is prevented from being deteriorated by light.
  • the package 11 may be made of a transmissive member that transmits light.
  • the crystal unit 10 is suppressed from being locally heated. More specifically, in the crystal resonator described in Patent Document 1, after sealing the container, the frequency adjusting material is irradiated with heat rays from the outside of the container through the transmission window. Therefore, the frequency adjusting material and the vicinity thereof are locally heated.
  • the metal member 150 is heated by heat conduction from the package 11 by heating the package 11, and the metal member 150 is deposited on the crystal resonator element 16. Therefore, the metal member 150 is heated by heat conduction from the package 11 after the entire package 11 is heated by heat conduction from the heating portion of the package 11. Thereby, it is suppressed that the crystal oscillator 10 is heated locally. As a result, the crystal resonator 10 is suppressed from being damaged by excessively heating a part of the crystal resonator 10.
  • the ion milling process is a process of irradiating the crystal piece with ions in order to adjust the shape of the crystal piece to an appropriate shape after the crystal piece is cut.
  • the crystal piece is cut slightly larger in advance than the target size. Then, the crystal piece is shaved in the ion milling process.
  • the crystal piece 17 is cut slightly smaller than the target size. Then, by heating the package 11 after sealing the package 11, the metal member 150 can be attached to the surface of the crystal resonator element 16 and the weight of the crystal resonator element 16 can be increased. Therefore, an ion milling process becomes unnecessary.
  • the crystal resonator 10, the method for manufacturing the crystal resonator 10, and the adjustment device 300 are useful for the following first reason and second reason.
  • the first reason will be described.
  • the crystal piece 17 is shaved excessively in the ion milling process. If the crystal piece 17 is shaved too much, the resonance frequency f of the crystal resonator 10 will be higher than the target resonance frequency ft. Therefore, by heating the package 11, the metal member 150 is attached to the surface of the crystal resonator element 16 and the weight of the crystal resonator element 16 is increased. Thereby, even if the crystal piece 17 is excessively cut in the ion milling process, the resonance frequency f of the crystal resonator 10 can be brought close to the target resonance frequency ft.
  • FIG. 6 is a diagram showing the weight of the crystal resonator element in each step in the conventional method for manufacturing a crystal resonator.
  • FIG. 7 is a view showing the weight of the crystal resonator element 16 in the method for manufacturing the crystal unit 10.
  • no excitation electrode or the like is formed in the cutting process and the ion milling process.
  • an excitation electrode or the like is formed in the heating process. Therefore, in order to make it easy to compare the weight in each process, in FIG. 6 and FIG. 7, the weight obtained by adding the weight of the excitation electrode or the like to the weight of the crystal piece in the cutting process and the ion milling process is shown as It was described as the weight of the quartz crystal vibration element.
  • the weight of the crystal piece after the cutting process there is variation in the weight of the crystal piece after the cutting process. Therefore, as shown in FIG. 6, in the ion milling process, the crystal piece is shaved so that the weight of the crystal piece becomes a target value. However, in the ion milling process, the weight of the crystal piece cannot be increased. Therefore, in the conventional method for manufacturing a crystal resonator, in the cutting step, the crystal piece is cut into a large size so that the lower limit of the weight of the crystal resonator element is larger than the target value. In this case, the amount of cutting the crystal piece in the ion milling process increases. As a result, the time required for the ion milling process becomes longer, and the damage to the crystal piece increases.
  • the weight of the crystal resonator element 16 can be increased by depositing the metal member 150 on the crystal resonator element 16 after the sealing step. Therefore, even if the lower limit of the crystal resonator element 16 becomes smaller than the target value in the cutting step, the weight of the crystal resonator element 16 can be adjusted to the target value in the heating step as shown in FIG. Therefore, in the cutting step, the crystal piece can be cut smaller. As a result, the upper limit of the weight of the crystal piece 17 shown in FIG. 7 is closer to the target value than the upper limit of the weight of the crystal piece shown in FIG.
  • the crystal resonator 10 manufacturing method requires less amount of the crystal piece 17 in the ion milling process than the conventional crystal resonator manufacturing method. As described above, the time required for the ion milling process is shortened, and the damage to the crystal piece is reduced.
  • the metal member 150 does not overlap the crystal piece 17 when viewed from above. Therefore, the distance between the crystal piece 17 and the substrate 12 can be reduced, and the vertical height of the crystal unit 10 can be reduced.
  • FIG. 8 is a cross-sectional structure diagram of the crystal resonator 10a according to the first modification.
  • FIG. 9 is a cross-sectional structure diagram of a crystal resonator 10b according to a second modification.
  • FIG. 10 is a cross-sectional structure diagram of a crystal resonator 10c according to a third modification. 8 to 10 correspond to cross-sectional structural views taken along the line AA of FIG.
  • the metal member 150 may overlap the crystal piece 17 when viewed from above.
  • the metal member 150 is provided above the crystal piece 17 and is disposed on the inner peripheral surface of the lid 14.
  • the metal member 150 is provided below the crystal piece 17 and is disposed on the upper surface of the substrate 12.
  • the same operational effects as the crystal resonator 10 can be obtained. Furthermore, according to the crystal resonators 10a and 10b, the metal member 150 overlaps the crystal piece 17 when viewed from above, so that the metal member 150 is efficiently deposited on the crystal resonator element 16.
  • the metal member 150 may be disposed on the inner peripheral surface of the lid 14 without overlapping with the crystal piece 17 when viewed from above. Thereby, the space
  • FIG. 11 is a block diagram of an adjusting device 300a used in the method for manufacturing the crystal resonator 10 according to the first modification.
  • the adjustment device 300a differs from the adjustment device 300 in that it includes a plurality of heating devices 302a to 302c and a distribution unit 314.
  • the adjustment device 300a will be described focusing on the difference.
  • the adjustment device 300a includes heating devices 302a to 302c, a control unit 308, a measurement unit 312 and a distribution unit 314.
  • the structure of the heating devices 302a to 302c is the same as that of the heating device 302, the description thereof is omitted.
  • the heating condition of the heating device 302a, the heating condition of the heating device 302b, and the heating condition of the heating device 302c are different from each other. Specifically, the heating temperatures of the heating devices 302a to 302c are equal to each other. However, the heating times T of the heating devices 302a to 302c are different from each other.
  • the heating time T of the heating device 302a is the heating time T1 (see Table 1).
  • the heating time T of the heating device 302b is the heating time T2 (see Table 1).
  • the heating time T of the heating device 302c is the heating time T3 (see Table 1).
  • the sorting unit 314 transports the crystal unit 10 for which the measurement unit 312 has finished measuring the resonance frequency f to one of the heating devices 302a to 302c according to the control of the control unit 308.
  • the control unit 308 controls the heating units 304a to 304c so that the resonance frequency f of the crystal unit 10 approaches the target resonance frequency ft based on the resonance frequency f measured by the measurement unit 312. More specifically, the control unit 308 subtracts the resonance frequency ft from the resonance frequency f to obtain the difference ⁇ f.
  • the control unit 308 causes the sorting unit 314 to transport the crystal unit 10 to the heating device 302a. Further, the control unit 308 causes the heating unit 304a to heat the package 11 over the heating time T1. Further, when ⁇ f2 ⁇ ⁇ f ⁇ f3, the control unit 308 causes the distribution unit 314 to transport the crystal unit 10 to the heating device 302b.
  • control unit 308 causes the heating unit 304b to heat the package 11 over the heating time T2. Further, when ⁇ f3 ⁇ ⁇ f ⁇ f4, the control unit 308 causes the sorting unit 314 to transport the crystal unit 10 to the heating device 302c. Further, the control unit 308 causes the heating unit 304c to heat the package 11 over the heating time T3.
  • FIG. 12 is a flowchart showing a method for manufacturing the crystal unit 10 according to the first modification.
  • steps S1 to S5 in FIG. 12 are the same as steps S1 to S5 in FIG. 12 are the same as steps S1 to S5 in FIG. 12
  • the control unit 308 determines, based on the difference ⁇ f, which heating device 302a to 302c the quartz resonator 10 is to be conveyed to the distribution unit 314 (step S16).
  • the sorting unit 314 transports the crystal unit 10 to any one of the heating devices 302a to 302c.
  • control unit 308 causes the heating unit 304a to 304c to heat the package 11 (step S17: heating step).
  • the metal member 150 is deposited on the surface of the crystal resonator element 16, and the resonance frequency f of the crystal resonator 10 approaches the target resonance frequency ft. Since the details of heating have already been described, further description is omitted. Since step S8 performed after this is the same as step S8 of FIG. 2, description is abbreviate
  • the same operational effects as those of the manufacturing method and adjustment device 300 of the crystal resonator 10 can be obtained.
  • FIG. 13 is a block diagram of an adjusting device 300b used in the method for manufacturing the crystal resonator 10 according to the second modification.
  • the adjustment device 300b is different from the adjustment device 300 in that the measurement unit 312 measures the resonance frequency f of the crystal resonator 10 in the furnace 306. That is, the measurement unit 312 measures the resonance frequency f of the crystal unit 10 while the heating device 302 is heating the package 11.
  • the control unit 308 causes the heating unit 304 to heat the package 11 until the resonance frequency f reaches the target resonance frequency ft.
  • FIG. 14 is a flowchart showing a method for manufacturing the crystal unit 10 according to the second modification.
  • steps S1 to S3 in FIG. 2 are the same as steps S1 to S3 in FIG. 2 and will not be described.
  • the control unit 308 causes the heating unit 304 to start heating the package 11 (step S24: heating start).
  • control unit 308 measures the resonance frequency f of the crystal unit 10 by the measurement unit 312 (step S25: first measurement process).
  • the resonance frequency f of the crystal resonator 10 is measured by the measurement unit 312 together with the heating process.
  • control unit 308 determines whether or not the resonance frequency f is equal to the target resonance frequency ft (step S26). When the resonance frequency f becomes equal to the target resonance frequency ft, the process proceeds to step S28. If the resonance frequency f is not equal to the target resonance frequency ft, the process proceeds to step S27.
  • Step S27 determines whether or not a predetermined time ⁇ t has elapsed after executing Step S26 (Step S27). If the predetermined time ⁇ t has elapsed, the process returns to step S25. If the predetermined time ⁇ t has not elapsed, the process returns to step S27.
  • the control unit 308 causes the heating unit 304 to finish heating the package 11 (step S28: heating end).
  • step S28 heating end
  • the same operational effects as those of the manufacturing method and adjustment device 300 of the quartz crystal resonator 10 can be obtained.
  • the piezoelectric vibrator, the piezoelectric vibrator manufacturing method, and the adjusting device according to the present invention are not limited to the crystal vibrators 10, 10a to 10c, the crystal vibrator 10 manufacturing method and the adjusting devices 300, 300a, 300b, and the gist thereof. It is possible to change within the range.
  • a crystal resonator element a crystal piece based on a crystal plate cut out at a predetermined angle with respect to the X axis, the Y axis, and the Z axis orthogonal to each other as crystal axes of the crystal
  • a tuning fork type crystal resonator element including a crystal piece having a base portion and at least one vibrating arm extending from the base portion and an excitation electrode provided on the vibrating arm so as to generate bending vibration can be used.
  • crystal resonators 10, 10a to 10c, the method for manufacturing the crystal resonator 10, and the configurations of the adjusting devices 300, 300a, 300b may be arbitrarily combined.
  • the purpose is to correct variations in the resonance frequency f of the crystal resonators 10, 10a to 10c. It was.
  • the crystal resonators 10 and 10a to 10c having plural kinds of resonance frequencies f may be manufactured by changing the heating condition of the package 11. For example, a plurality of crystal resonators 10 and 10a to 10c having a resonance frequency f of 28 MHz are manufactured. Then, the packages 11 of some of the crystal resonators 10 and 10a to 10c are heated.
  • the crystal resonators 10 and 10a to 10c having the resonance frequency f of 27 MHz and the crystal resonators 10 and 10a to 10c having the resonance frequency f of 28 MHz may be manufactured.
  • the bonding material 50 may be used as the metal member 150 in the crystal resonators 10 and 10a to 10c. That is, by heating the package 11, the bonding material 50 may be heated by heat conduction, and a part of the bonding material 50 may be deposited on the surface of the crystal resonator element 16.
  • the heating conditions include the heating temperature and the heating time, but other conditions may be included in the heating conditions.
  • the present invention is useful for a piezoelectric vibrator, a method for manufacturing a piezoelectric vibrator, and an adjustment device.
  • the resonance frequency of the piezoelectric vibrator is adjusted after sealing the package without providing a transmission window in the package. Excellent in that it can be done.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'objet de la présente invention est de fournir un vibreur piézoélectrique, un procédé de fabrication d'un vibreur piézoélectrique et un dispositif de réglage qui permettent de régler la fréquence de résonance d'un vibreur piézoélectrique après qu'un boîtier est scellé sans ménager de fenêtre de transmission dans le boîtier. Un vibreur piézoélectrique selon la présente invention comprend : un boîtier qui comprend un substrat, un couvercle, et un matériau de jonction pour joindre le substrat et le couvercle, et qui est un récipient étanche ; un élément de vibration piézoélectrique qui est disposé dans le boîtier et qui comprend une pièce piézoélectrique, une première électrode d'excitation et une seconde électrode d'excitation ; et un élément métallique qui est disposé dans le boîtier de façon à ne pas être en contact avec l'élément de vibration piézoélectrique, et a un point de fusion inférieur à celui du matériau de la première électrode d'excitation et de la seconde électrode d'excitation, l'intérieur du boîtier étant protégé contre la lumière.
PCT/JP2017/023177 2016-09-30 2017-06-23 Vibreur piézoélectrique, procédé de fabrication de vibreur piézoélectrique et dispositif de réglage Ceased WO2018061356A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081697A (ja) * 2005-09-13 2007-03-29 Daishinku Corp 圧電振動デバイス及びその製造方法
WO2009101733A1 (fr) * 2008-02-16 2009-08-20 Seiko Instruments Inc. Vibrateur piézoélectrique, procédé de fabrication du vibrateur piézoélectrique, oscillateur, instrument électronique et horloge atomique
JP2011211441A (ja) * 2010-03-29 2011-10-20 Seiko Instruments Inc 圧電振動子の製造方法、圧電振動子、発振器、電子機器、および電波時計
JP2014160877A (ja) * 2009-02-19 2014-09-04 Nec Corp 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081697A (ja) * 2005-09-13 2007-03-29 Daishinku Corp 圧電振動デバイス及びその製造方法
WO2009101733A1 (fr) * 2008-02-16 2009-08-20 Seiko Instruments Inc. Vibrateur piézoélectrique, procédé de fabrication du vibrateur piézoélectrique, oscillateur, instrument électronique et horloge atomique
JP2014160877A (ja) * 2009-02-19 2014-09-04 Nec Corp 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法
JP2011211441A (ja) * 2010-03-29 2011-10-20 Seiko Instruments Inc 圧電振動子の製造方法、圧電振動子、発振器、電子機器、および電波時計

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