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WO2018059227A1 - Optical communication assembly and preparation method and communication device thereof - Google Patents

Optical communication assembly and preparation method and communication device thereof Download PDF

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Publication number
WO2018059227A1
WO2018059227A1 PCT/CN2017/101405 CN2017101405W WO2018059227A1 WO 2018059227 A1 WO2018059227 A1 WO 2018059227A1 CN 2017101405 W CN2017101405 W CN 2017101405W WO 2018059227 A1 WO2018059227 A1 WO 2018059227A1
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Prior art keywords
chip device
port
chip
coupling layer
optical communication
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PCT/CN2017/101405
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French (fr)
Chinese (zh)
Inventor
魏玉明
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206Optical features
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements

Definitions

  • the present invention relates to the field of communications technologies, and in particular, to an optical communication component, a method for fabricating the same, and a communication device.
  • Modern optical communication is a way of communicating with light as a carrier of signals. It requires a variety of functional devices, such as a modulator that converts 1/0 of an electrical signal to a light intensity of 1/0, and a laser that emits light of a different wavelength. , detectors that detect optical signals, optical switches that implement point-to-point routing, and more.
  • the optical amplifier is an indispensable part of optical communication.
  • an existing solution is to integrate an optical amplifier into silicon (the optical amplifier cannot be fabricated using silicon, and is currently manufactured using an indium phosphide-based material). Specifically, an area is cut on the silicon substrate, the indium phosphide-semiconductor optical amplifier is pasted, and the input/output ports of the light are aligned; however, the alignment requirements of the optical amplifier in the above scheme are too high: SOI When the input and output ends of the upper silicon waveguide and the semiconductor optical amplifier are aligned, the position deviation 1um introduces 1dB extra loss, and 2um introduces 3dB extra loss (equivalent to 50% loss of light energy); the semiconductor optical amplifier is higher than the semiconductor silicon Higher, so paste, height alignment can only be “tested” out of a suitable manufacturing environment by repeated experiments, and a different type of semiconductor optical amplifier will have to "try” again.
  • evanescent wave I/O which first forms a waveguide on the device for coupling and then attaches it to the surface of the chip. This is destined to still require a high-precision alignment process.
  • the invention provides an optical communication component, a preparation method thereof and a communication device, which are used for improving the communication effect of the optical communication component and reducing the preparation difficulty.
  • the present invention also provides an optical communication assembly including a substrate, a first on-chip device disposed on the substrate, and a second on-chip device, wherein the first on-chip device has a first port, The second on-chip device has a second port, and the first port and the second port have a height difference in a direction perpendicular to the substrate; further comprising:
  • the first port of the first on-chip device is reduced by first forming an auxiliary coupling layer between the first on-chip device and the second on-chip device, and then by preparing a waveguide structure in the auxiliary coupling layer.
  • the alignment accuracy requirement of the second port of the second on-chip device improves the yield of the optical communication component during preparation, and at the same time Increased production efficiency of optical communication components.
  • the first on-chip device and the second on-chip device are multiple, and the plurality of first on-chip devices are in one-to-one correspondence with the plurality of second on-chip devices; the auxiliary coupling layer The inner etch has a waveguide structure corresponding to each pair of the first on-chip device and the second on-chip device. That is, the optical communication component can include a plurality of pairs of one-to-one corresponding first on-chip devices and second on-chip devices, and only one auxiliary coupling layer is needed to etch corresponding to each pair of the first on-chip device and the second on-chip device. Waveguide structure.
  • the waveguide structure is a linear waveguide structure to reduce wear.
  • the invention provides a method for preparing an optical communication component, the method comprising the following steps:
  • the first on-chip device has a first port
  • the second on-chip device has a second port
  • the first port And the second port has a height difference in a direction perpendicular to the substrate
  • a waveguide structure that connects the first port and the second port is formed in the formed auxiliary coupling layer.
  • the first on-chip device and the second on-chip device are first fixed on the substrate, and then the auxiliary coupling layer is wrapped between the first on-chip device and the second on-chip device, and finally through the auxiliary coupling layer.
  • the method for forming the waveguide structure improves the alignment accuracy requirements of the first port of the first on-chip device, the second port of the second on-chip device, and the auxiliary coupling layer, thereby improving the optical coupling efficiency of the optical communication component, thereby improving the light.
  • the fixing of the first on-chip device and the second on-die device on the same surface of the substrate is specifically: bonding the first on-chip device and the second on-chip device to the substrate by flip-chip bonding or bonding The same surface; or the first on-chip device and the second on-chip device are formed directly on the same surface of the substrate. That is, the first on-chip device, the second on-chip device, and the substrate may be in a split structure, and then assembled by soldering, bonding, or bonding, or the first on-chip device and the second on-chip device and substrate are One piece structure. That is, the first on-chip device and the second on-chip device are fixed on the substrate by different preparation methods.
  • the auxiliary coupling layer is an auxiliary coupling layer made of a polymer material.
  • a polymer material such as: polyvinyl chloride, polyethylene, polypropylene and so on.
  • An auxiliary coupling layer is formed between the first on-chip device and the second on-chip device, and the auxiliary coupling layer encloses the first port of the first on-chip device and the second port of the second on-chip device are:
  • a liquid or gel-like polymer between the first on-chip device and the second on-chip device and wrapping the first port of the first on-chip device and the second port of the second on-chip device in a liquid or gel state
  • the polymer solidifies to form an auxiliary coupling layer. That is, the first port of the first on-chip device and the second port of the second on-chip device are wrapped by a liquid or gel-like polymer, and then the polymer is cured by different curing methods to form an auxiliary coupling layer, in specific curing.
  • the liquid or gel polymer is cured by heating or ultraviolet irradiation to form an auxiliary coupling layer. It is of course also possible to cure the polymer to form an auxiliary coupling layer by other known curing methods.
  • the waveguide structure When forming the waveguide structure, it is specifically:
  • a waveguide structure is formed in the auxiliary coupling layer by etching between the lines of a1 and a2. That is, by determining the coupling center coordinates of the first port of the first on-chip device and the coupling center of the second port of the second on-chip device Coordinates, then forming a waveguide structure on the line between the two coordinates, that is, connecting the two coordinates through the waveguide structure, thereby ensuring that the formed waveguide structure can connect the first port of the first on-chip device with the second on-chip device The second port is turned on.
  • the method is specifically: after the first on-chip device and the second on-die device are fixed on the same surface of the substrate, the set position on the substrate is taken as the origin, and the measurement is performed.
  • the coordinate a2 of the coupling center of the first port of the second on-chip device is obtained according to the known relative coordinate of the coupling center of the first port of the second on-chip device and the identification point of the coupling point of the coupling center and the coordinate b2 of the identification point of the coupling center.
  • first on-chip device and the second on-die device are fixed on the substrate, first, a point which is relatively easy to measure is searched for as a coupling center point on the first on-chip device and the second on-chip device, and the coupling is measured. The distance between the center's identification point and the coupling center. After the first on-chip device and the second on-die device are mounted on or formed on the substrate, a position is selected on the substrate as an origin, and a three-dimensional coordinate system is established, and then the identification of the coupling center of the device on the first chip is measured.
  • the coordinate b1 of the point in the coordinate system, and the coordinate b2 of the identification point of the coupling center of the device on the second chip in the coordinate system, and obtained by the measured b1 and b2 and the known coupling center and the coordinate point of the coupling center The coordinates a1 and a2 of the coupling center.
  • the straight line connecting lines between a1 and a2 is the installation position of the waveguide structure, and in a specific arrangement, the waveguide structure can be formed in the auxiliary coupling layer by laser direct writing technique.
  • the present invention provides a communication device including a signal transmitting device, and a signal receiving device, further comprising a signal transmitting device disposed between the signal transmitting device and the signal receiving device and configured to signally connect the signal transmitting device and the An optical communication component according to any of the above-mentioned items of the signal receiving device.
  • the auxiliary coupling layer is formed between the first on-chip device and the second on-chip device, and then the waveguide structure is prepared in the auxiliary coupling layer, thereby reducing the first on-chip
  • the alignment accuracy requirements of the first port of the device and the second port of the second on-chip device improve the yield of the optical communication component during preparation and improve the production efficiency of the optical communication component. Thereby, the production efficiency and communication effect of the communication device are improved.
  • FIG. 1 is a top plan view of an optical communication component according to an embodiment of the present invention.
  • FIG. 2 is a side view of an optical communication component according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of an optical communication component according to another embodiment of the present invention.
  • FIG. 4 is a flow chart of preparing an optical communication component according to an embodiment of the present invention.
  • FIG. 5 is a flowchart of preparing an optical communication component according to an embodiment of the present invention.
  • an embodiment of the present invention further provides an optical communication component, comprising: a substrate 1, a first on-chip device 3 and a second on-chip device 4 disposed on the substrate 1;
  • the first on-chip device 3 has a first port
  • the second on-chip device 4 has a second port
  • the first port and the second port have a height difference in a direction perpendicular to the substrate;
  • the auxiliary coupling layer 2 is formed between the first on-chip device 3 and the second on-chip device 4, and then the waveguide structure 21 is prepared in the auxiliary coupling layer 2, thereby reducing the first wafer.
  • the alignment accuracy requirements of the first port of the device and the second port of the second on-chip device improve the yield of the optical communication component at the time of preparation, and at the same time improve the production efficiency of the optical communication component.
  • the first port of the first on-chip device 3 and the second port of the second on-chip device 4 may be in a specific arrangement. Different heights, as shown in FIG. 2, in a specific scheme, there is a height difference between the first port of the first on-chip device 3 and the second port of the second on-chip device 4 (the height difference is as shown in FIG. 2 When the placement direction of the optical communication unit shown is the reference direction, the height difference in the vertical direction), the waveguide structure 21 etched in the auxiliary coupling layer 2 is inclined. In the above manner, the first on-chip device 3 and the second on-chip device 4 are made more flexible when disposed, and different levels of on-chip devices can be used as components for optical transmission, which increases the device selectivity of the optical communication component.
  • the waveguide structure employs a linear waveguide.
  • the waveguide structure provided by the present embodiment is not limited to the above-described linear type, and other forms such as a curved form may be employed.
  • the first on-chip device 3 and the second on-chip device 4 are multiple, and the plurality of first on-chip devices 3 and the plurality of second on-chip devices 4 are in one-to-one correspondence.
  • the auxiliary coupling layer 2 is etched with a waveguide structure 21 corresponding to each pair of the first on-chip device 3 and the second on-chip device.
  • two columns of on-chip devices are disposed, one of which is the first on-chip device 3 and the other column is the second on-chip device 4, and is located on the first slice of the same row.
  • the device 3 and the second on-chip device 4 are a pair, and the two are connected by a waveguide structure 21.
  • the plurality of first on-chip devices 3 and the second on-chip device 4 share an auxiliary coupling layer 2, only It is necessary to form the waveguide structure 21 for each pair of on-chip devices in the auxiliary coupling layer 2, thereby simplifying the structural composition of the optical communication device, reducing the mounting precision of the optical communication component, and improving the production efficiency of the optical communication component.
  • FIG. 4 is a flow chart showing the preparation of the optical communication component provided by this embodiment.
  • the present invention provides a method of fabricating an optical communication component for reducing an optical communication component, the method comprising the steps of:
  • the first on-chip device has a first port
  • the second on-chip device has a second port
  • the first port And the second port has a height difference in a direction perpendicular to the substrate
  • a waveguide structure that connects the first port and the second port is formed in the formed auxiliary coupling layer.
  • the first on-chip device and the second on-chip device are first fixed on the substrate, and then the auxiliary coupling layer is wrapped between the first on-chip device and the second on-chip device, and finally through the auxiliary coupling layer.
  • the method of forming the waveguide structure therein improves the alignment accuracy requirements of the first port of the first on-chip device, the second port of the second on-chip device, and the auxiliary coupling layer, since the waveguide structure in the auxiliary coupling layer is installed Processing, therefore, when the first on-chip device and the second on-die device are mounted, the first port of the first on-chip device and the second port of the second on-chip device need only be substantially aligned (positional deviation may be tens On the order of micrometers, thereby reducing the accuracy of the alignment of the first on-chip device, the second on-chip device, and the auxiliary coupling layer.
  • the waveguide structure adopts the effect of post-processing, the accuracy of the waveguide structure connecting the first on-chip device and the second on-chip device is ensured, thereby improving the communication effect of the optical communication component.
  • FIG. 5 illustrates a method of fabricating an optical communication component according to an embodiment of the present invention. Meanwhile, for ease of understanding, reference may be made to FIG. 1 and FIG. 2 together, wherein FIG. 1 shows a plan view of an optical communication component prepared by the method, and FIG. 2 shows a side of the optical communication component prepared by the method. view.
  • the mounting precision of the optical communication component provided by the embodiment of the present invention provides a method for preparing an optical communication component. As shown in FIG. 5, the preparation method includes the following steps:
  • Step 001 fixing the first on-chip device 3 and the second on-chip device 4 on the same surface of the substrate 1; wherein the first on-chip device 3 has a first port, and the second on-chip device 4 has a second port, and The first port and the second port have a height difference in a direction perpendicular to the substrate;
  • the first on-chip device 3, the second on-chip device 4, and the substrate 1 may adopt different structural forms, such as: when the first on-chip device 3, the second on-chip device 4, and the substrate 1 have a separate structure, At the time of assembly, the first on-chip device 3 and the second on-chip device 4 are fixed on the substrate 1 by a connection method to form a stable connection, and in the specific connection, flip-chip bonding, bonding or bonding may be employed.
  • the first on-chip device 3 and the second on-chip device 4 are fixed on the same surface of the substrate 1 in different connection manners; when the first on-chip device 3, the second on-chip device 4, and the substrate 1 are integrated structures, The upper device 3 and the second on-chip device 4 directly form the first on-chip device 3 and the second on-chip device 4 on the same surface of the substrate 1.
  • the substrate 1 may be a material such as a silicon substrate or glass that can propagate light.
  • the substrate 1 is a substrate made of a silicon material.
  • a position is selected on the substrate 1 as an origin.
  • the position point may be selected as a corner point on the substrate 1, a center point of one side, or on the first sheet.
  • a point between the device 3 and the second on-chip device 4 serves as an origin, and a three-dimensional coordinate system is established according to the origin, after which the coordinate b1 of the identification point of the coupling center of the first on-chip device 3 in the coordinate system is measured, and the measurement is performed.
  • the coordinate b2 of the coupling center of the coupling center of the second on-chip device 4 is in the coordinate system. Referring to FIG. 1 and FIG. 2 together, FIG. 1 and FIG. 2 show an optical communication component.
  • Step 003 Acquire a coupling center coordinate a1 of the first port of the first on-chip device 3 and a coupling center coordinate a2 of the second port of the second on-chip device 4;
  • the first port of the first on-chip device 3 is obtained according to the known relative coordinate of the coupling center of the first port on the first on-chip device 3 and the identification point of the coupling center and the coordinate b1 of the identification point of the coupling center. Coordinate a1 of the coupling center; obtaining the first of the second on-chip device 4 according to the known relative coordinate of the coupling center of the first port of the second on-chip device 4 and the identification point of the coupling center and the coordinate b2 of the identification point of the coupling center The coordinate a2 of the coupling center of the port.
  • first, on the first on-chip device 3 and the second on-chip device 4 are fixed on the substrate 1, first, on the first on-chip device 3 and the second on-chip device 4, a point which is relatively easy to measure is used as a mark point of the coupling center. And measuring the relative coordinates between the identification point of the coupling center and the coupling center, specifically, using the identification point as the origin, establishing a coordinate system, measuring the coordinates of the coupling center, or establishing a coordinate system with the coupling center as a coordinate, and measuring the identification point The coordinates of the coupling center and the identification point of the coupling center are obtained; the coordinates a1 and a2 of the coupling center are obtained in combination with the measured b1 and b2.
  • Step 004 forming an auxiliary coupling layer 2 between the first on-chip device 3 and the second on-chip device 4, and the auxiliary coupling layer 2 encloses the first port of the first on-chip device 3 and the second on the second on-chip device 4. port;
  • the auxiliary coupling layer 2 is an auxiliary coupling layer made of a polymer material.
  • a polymer material such as: polyvinyl chloride, polyethylene, polypropylene and so on.
  • a liquid or gel-like polymer is filled between the first on-chip device 3 and the second on-chip device 4, and wraps the first port of the first on-chip device 3 and the second on-chip device 4.
  • the two ports solidify the liquid or gel polymer to form the auxiliary coupling layer 2.
  • the first port of the first on-chip device 3 and the second port of the second on-chip device 4 are wrapped by a liquid or gel polymer, and then the polymer is cured by different curing methods to form the auxiliary coupling layer 2,
  • the liquid or gel polymer is cured by heating or ultraviolet irradiation to form the auxiliary coupling layer 2. It is of course also possible to cure the polymer to form the auxiliary coupling layer 2 by other known curing methods.
  • Step 005 A waveguide structure 21 that communicates with the first port of the first on-chip device 3 and the second port of the second on-chip device 4 is formed in the formed auxiliary coupling layer 2.
  • the coupling center coordinate a1 of the first port of the first on-chip device 3 and the coupling center coordinate a2 of the second port of the second on-chip device 4 are obtained through step 003; pass between the lines of a1 and a2
  • the etching forms the waveguide structure 21 in the auxiliary coupling layer 2.
  • the formation of the waveguide means that there is a region in the auxiliary coupling layer 2, and the refractive index within it is greater than the refractive index outside it, so that the light can be bound and propagated (similar to a water pipe).
  • the waveguide structure 21 can be formed in the auxiliary coupling layer 2 by a laser direct writing technique.
  • the waveguide structure 21 formed by the above means satisfies the following characteristics:
  • one end of the region is connected to the first port of the first on-chip device 3, and the other end is connected to the second port of the second on-chip device 4;
  • the portion of the region connected to the first port of the first on-chip device 3 is centered on a1 or contains a1;
  • the portion of the area connected to the second port of the second on-chip device 4 is centered on a2 or contains a2;
  • the optical communication component provided by the embodiment is prepared by first fixing the first on-chip device 3 and the second on-chip device 4 on the substrate 1, and then on the first on-chip device 3 and The second on-chip device 4 encloses the auxiliary coupling layer 2, and finally the second port of the first on-chip device 3 and the second on-chip device 4 are improved by forming the waveguide structure 21 in the auxiliary coupling layer 2.
  • the alignment accuracy requirements of the port and the auxiliary coupling layer 2 improve the optical coupling efficiency of the optical communication component, thereby improving the yield and production efficiency of the optical communication component.
  • the embodiment of the present invention further provides a communication device, including a signal transmitting device, and a signal receiving device, further comprising a signal transmitting device disposed between the signal transmitting device and the signal receiving device and configured to signal the signal transmission
  • a communication device including a signal transmitting device, and a signal receiving device, further comprising a signal transmitting device disposed between the signal transmitting device and the signal receiving device and configured to signal the signal transmission
  • An optical communication component according to any of the above-mentioned items of the device and the signal receiving device.
  • the auxiliary coupling layer 2 is formed between the first on-chip device 3 and the second on-chip device 4, and then the waveguide structure 21 is prepared by the auxiliary coupling layer 2, thereby
  • the alignment precision requirements of the first port of the first on-chip device and the second port of the second on-chip device are reduced, the yield of the optical communication component at the time of preparation is improved, and the production efficiency of the optical communication component is improved. Thereby, the production efficiency and communication effect of the communication device are improved.

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  • Optical Couplings Of Light Guides (AREA)

Abstract

An optical communication assembly and a preparation method and communication device thereof, relating to the technical field of communications. The optical communication assembly comprises a substrate (1), a first on-chip device (3) and a second on-chip device (4) which are provided on the substrate (1), wherein a first port of the first on-chip device (3) has a height difference with a second port of the second on-chip device (4); and further comprises: an auxiliary coupling layer (2) provided between the first on-chip device (3) and the second on-chip device (4), wherein a waveguide structure (21) communicating the first port with the second port is provided in the auxiliary coupling layer (2) in a sloping manner. Through the method of firstly fixing the two on-chip devices on the substrate, then wrapping the auxiliary coupling layer (2) between the first on-chip device (3) and the second on-chip device (4), and finally forming the waveguide structure (21) in the auxiliary coupling layer (2), the requirements for alignment accuracy of the first port of the first on-chip device (3) and the second port of the second on-chip device (4) are reduced, the optical coupling efficiency of the optical communication assembly is improved, thus the finished product yield and production efficiency of the optical communication assembly is improved.

Description

一种光通信组件及其制备方法、通信设备Optical communication component, preparation method thereof, and communication device

本申请要求在2016年9月30日提交中国专利局、申请号为201610879122.1发明名称为“一种光通信组件及其制备方法、通信设备”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。The present application claims priority to Chinese Patent Application No. 201610879122.1, entitled "An optical communication component and its preparation method, communication device", which is filed on September 30, 2016, the entire contents of which are incorporated by reference. In this application.

技术领域Technical field

本发明涉及到通信技术领域,尤其涉及到一种光通信组件及其制备方法、通信设备。The present invention relates to the field of communications technologies, and in particular, to an optical communication component, a method for fabricating the same, and a communication device.

背景技术Background technique

现代光通信是以光为信号的载体进行通信的方式,它需要很多种功能器件,例如:将电信号的1/0转换到光强度1/0上的调制器,发射不同波长的光的激光器,检测光信号的探测器,实现点到点路由的光开关…等等。Modern optical communication is a way of communicating with light as a carrier of signals. It requires a variety of functional devices, such as a modulator that converts 1/0 of an electrical signal to a light intensity of 1/0, and a laser that emits light of a different wavelength. , detectors that detect optical signals, optical switches that implement point-to-point routing, and more.

光在传输的过程中会发生损耗,造成光功率下降,如果光功率降到探测器的接收范围以下,那么通信就失败了,因此,光放大器是光通信中必不可少的一环。Light will be lost during the transmission process, causing the optical power to drop. If the optical power falls below the receiver's receiving range, the communication will fail. Therefore, the optical amplifier is an indispensable part of optical communication.

在具体设置时,现有的一种方案为将光放大器集成到硅上(光放大器用硅无法制造,目前都是使用磷化铟基材料制造)。具体的,在硅衬底上切出一块面积,把磷化铟-半导体光放大器粘贴上去,并且把光的输入/输出端口对准;但是上述方案中光放大器的对准的要求太高:SOI上的硅波导和半导体光放大器的输入/输出端对准的时候位置偏差1um引入1dB额外损耗,2um引入3dB额外损耗(相当于损失50%的光能量);半导体光放大器比半导体硅的高度要高一些,这样贴上去,高度上的对准只能靠反复的实验来“试”出一个合适制造环境,而且换一个不同型号的半导体光放大器就又要再“试”一遍。In the specific setting, an existing solution is to integrate an optical amplifier into silicon (the optical amplifier cannot be fabricated using silicon, and is currently manufactured using an indium phosphide-based material). Specifically, an area is cut on the silicon substrate, the indium phosphide-semiconductor optical amplifier is pasted, and the input/output ports of the light are aligned; however, the alignment requirements of the optical amplifier in the above scheme are too high: SOI When the input and output ends of the upper silicon waveguide and the semiconductor optical amplifier are aligned, the position deviation 1um introduces 1dB extra loss, and 2um introduces 3dB extra loss (equivalent to 50% loss of light energy); the semiconductor optical amplifier is higher than the semiconductor silicon Higher, so paste, height alignment can only be "tested" out of a suitable manufacturing environment by repeated experiments, and a different type of semiconductor optical amplifier will have to "try" again.

另一种方案为采用倏逝波I/O的方案,它是先在这个耦合用的器件上形成了波导,然后再把它贴到芯片表面。这就注定它还是需要有一个高精度的对准过程。Another solution is to use evanescent wave I/O, which first forms a waveguide on the device for coupling and then attaches it to the surface of the chip. This is destined to still require a high-precision alignment process.

发明内容Summary of the invention

本发明提供了一种光通信组件及其制备方法、通信设备,用以提高光通信组件的通信效果,降低制备难度。The invention provides an optical communication component, a preparation method thereof and a communication device, which are used for improving the communication effect of the optical communication component and reducing the preparation difficulty.

本发明还提供了一种光通信组件,该通信组件包括衬底,设置在衬底上的第一片上器件及第二片上器件,其中,所述第一片上器件具有第一端口,所述第二片上器件具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;还包括:The present invention also provides an optical communication assembly including a substrate, a first on-chip device disposed on the substrate, and a second on-chip device, wherein the first on-chip device has a first port, The second on-chip device has a second port, and the first port and the second port have a height difference in a direction perpendicular to the substrate; further comprising:

设置在所述第一片上器件和第二片上器件之间的辅助耦合层,且所述辅助耦合层包裹住所述第一端口及第二端口,所述辅助耦合层内倾斜设置有将所述第一端口与所述第二端口连通的波导结构。An auxiliary coupling layer disposed between the first on-chip device and the second on-chip device, and the auxiliary coupling layer encloses the first port and the second port, wherein the auxiliary coupling layer is obliquely disposed to be A waveguide structure in which the first port is in communication with the second port.

在上述实施方案中,通过先在第一片上器件与第二片上器件之间形成辅助耦合层,之后再通过在辅助耦合层制备出波导结构,从而降低了第一片上器件的第一端口和第二片上器件的第二端口的对准精度要求,提高了光通信组件在制备时的成品率,同时 提高了光通信组件的生产效率。In the above embodiment, the first port of the first on-chip device is reduced by first forming an auxiliary coupling layer between the first on-chip device and the second on-chip device, and then by preparing a waveguide structure in the auxiliary coupling layer. And the alignment accuracy requirement of the second port of the second on-chip device improves the yield of the optical communication component during preparation, and at the same time Increased production efficiency of optical communication components.

在具体的一个方案中,所述第一片上器件及所述第二片上器件均为多个,且多个第一片上器件与多个第二片上器件一一对应;所述辅助耦合层内刻蚀有与每对第一片上器件及第二片上器件对应的波导结构。即该光通信组件可以包含多对一一对应的第一片上器件及第二片上器件,仅需一个辅助耦合层即可刻蚀出与每对第一片上器件及第二片上器件对应的波导结构。In a specific aspect, the first on-chip device and the second on-chip device are multiple, and the plurality of first on-chip devices are in one-to-one correspondence with the plurality of second on-chip devices; the auxiliary coupling layer The inner etch has a waveguide structure corresponding to each pair of the first on-chip device and the second on-chip device. That is, the optical communication component can include a plurality of pairs of one-to-one corresponding first on-chip devices and second on-chip devices, and only one auxiliary coupling layer is needed to etch corresponding to each pair of the first on-chip device and the second on-chip device. Waveguide structure.

在一个优选的方案中,所述波导结构为直线型波导结构,从而降低耗损。In a preferred embodiment, the waveguide structure is a linear waveguide structure to reduce wear.

本发明提供了一种光通信组件的制备方法,该方法包括以下步骤:The invention provides a method for preparing an optical communication component, the method comprising the following steps:

将第一片上器件及第二片上器件固定在衬底的同一表面,其中,所述第一片上器件具有第一端口,所述第二片上器件具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;Fixing the first on-chip device and the second on-die device on the same surface of the substrate, wherein the first on-chip device has a first port, the second on-chip device has a second port, and the first port And the second port has a height difference in a direction perpendicular to the substrate;

在第一片上器件与第二片上器件之间形成辅助耦合层,且所述辅助耦合层包裹住所述第一端口及第二端口;Forming an auxiliary coupling layer between the first on-chip device and the second on-chip device, and the auxiliary coupling layer wraps the first port and the second port;

在形成的辅助耦合层中制作连通所述第一端口与所述第二端口的波导结构。A waveguide structure that connects the first port and the second port is formed in the formed auxiliary coupling layer.

在上述方案中,通过先将第一片上器件及第二片上器件固定在衬底上,之后在第一片上器件及第二片上器件之间包裹辅助耦合层,最后再通过在辅助耦合层内形成波导结构的方法,改善了第一片上器件的第一端口、第二片上器件的第二端口及辅助耦合层的对位精度要求,提高了光通信组件的光耦合效率,进而提高光通信组件的成品率以及生产效率。In the above solution, the first on-chip device and the second on-chip device are first fixed on the substrate, and then the auxiliary coupling layer is wrapped between the first on-chip device and the second on-chip device, and finally through the auxiliary coupling layer. The method for forming the waveguide structure improves the alignment accuracy requirements of the first port of the first on-chip device, the second port of the second on-chip device, and the auxiliary coupling layer, thereby improving the optical coupling efficiency of the optical communication component, thereby improving the light. The yield of the communication components and the production efficiency.

其中的将第一片上器件及第二片上器件固定在衬底的同一表面具体为:通过倒装焊或键合的方式将所述第一片上器件和第二片上器件粘贴到衬底的同一表面;或在衬底的同一表面直接形成第一片上器件及第二片上器件。即第一片上器件、第二片上器件及衬底可以采用分体结构,之后通过焊接、键合或者粘接等形成组装成一体,或者第一片上器件及第二片上器件与衬底为一体结构。即通过不同的制备方式将第一片上器件及第二片上器件固定在衬底上。The fixing of the first on-chip device and the second on-die device on the same surface of the substrate is specifically: bonding the first on-chip device and the second on-chip device to the substrate by flip-chip bonding or bonding The same surface; or the first on-chip device and the second on-chip device are formed directly on the same surface of the substrate. That is, the first on-chip device, the second on-chip device, and the substrate may be in a split structure, and then assembled by soldering, bonding, or bonding, or the first on-chip device and the second on-chip device and substrate are One piece structure. That is, the first on-chip device and the second on-chip device are fixed on the substrate by different preparation methods.

其中的辅助耦合层为聚合物材料制作的辅助耦合层。如:聚氯乙烯、聚乙烯、聚丙烯等。The auxiliary coupling layer is an auxiliary coupling layer made of a polymer material. Such as: polyvinyl chloride, polyethylene, polypropylene and so on.

其中的在第一片上器件与第二片上器件之间形成辅助耦合层,且所述辅助耦合层包裹住所述第一片上器件的第一端口及第二片上器件的第二端口具体为:An auxiliary coupling layer is formed between the first on-chip device and the second on-chip device, and the auxiliary coupling layer encloses the first port of the first on-chip device and the second port of the second on-chip device are:

将液态或胶状的聚合物填充在第一片上器件和第二片上器件之间,并包裹第一片上器件的第一端口及第二片上器件的第二端口,将液态或胶状的聚合物凝固形成辅助耦合层。即通过液态或胶状的聚合物包裹住第一片上器件的第一端口及第二片上器件的第二端口,之后再通过不同的固化方式将聚合物固化形成辅助耦合层,在具体固化时,如采用加热或紫外线照射的方式将液态或胶状的聚合物固化形成辅助耦合层。当然还可以采用其他的已知的固化方法将聚合物固化形成辅助耦合层。Filling a liquid or gel-like polymer between the first on-chip device and the second on-chip device and wrapping the first port of the first on-chip device and the second port of the second on-chip device in a liquid or gel state The polymer solidifies to form an auxiliary coupling layer. That is, the first port of the first on-chip device and the second port of the second on-chip device are wrapped by a liquid or gel-like polymer, and then the polymer is cured by different curing methods to form an auxiliary coupling layer, in specific curing. The liquid or gel polymer is cured by heating or ultraviolet irradiation to form an auxiliary coupling layer. It is of course also possible to cure the polymer to form an auxiliary coupling layer by other known curing methods.

在形成波导结构时,具体为:When forming the waveguide structure, it is specifically:

获取第一片上器件的第一端口的耦合中心坐标a1及第二片上器件的第二端口的耦合中心坐标a2;Obtaining a coupling center coordinate a1 of the first port of the first on-chip device and a coupling center coordinate a2 of the second port of the second on-chip device;

在所述a1与a2的连线之间通过刻蚀在所述辅助耦合层中形成波导结构。即通过确定第一片上器件的第一端口的耦合中心坐标以及第二片上器件的第二端口的耦合中心 坐标,之后在两个坐标之间的连线上形成波导结构,即通过波导结构将两个坐标连接,从而保证形成的波导结构能够将第一片上器件的第一端口与第二片上器件的第二端口导通。A waveguide structure is formed in the auxiliary coupling layer by etching between the lines of a1 and a2. That is, by determining the coupling center coordinates of the first port of the first on-chip device and the coupling center of the second port of the second on-chip device Coordinates, then forming a waveguide structure on the line between the two coordinates, that is, connecting the two coordinates through the waveguide structure, thereby ensuring that the formed waveguide structure can connect the first port of the first on-chip device with the second on-chip device The second port is turned on.

在具体获取两个耦合中心坐标时,采用的方法具体为:在将第一片上器件及第二片上器件固定在衬底的同一表面后,以衬底上的设定位置为原点,测量第一片上器件的第一端口的耦合中心的标识点的坐标:b1=(x1,y1,z1),及第二片上器件的第二端口的耦合中心的标识点的坐标b2=(x2,y2,z2);In the specific acquisition of the coordinates of the two coupling centers, the method is specifically: after the first on-chip device and the second on-die device are fixed on the same surface of the substrate, the set position on the substrate is taken as the origin, and the measurement is performed. The coordinates of the identification point of the coupling center of the first port of the upper device: b1=(x1, y1, z1), and the coordinate of the identification point of the coupling center of the second port of the second on-chip device b2=(x2, y2 ,z2);

根据第一片上器件上的第一端口的耦合中心与耦合中心的标识点的已知相对坐标及耦合中心的标识点的坐标b1,获取第一片上器件的第一端口的耦合中心的坐标a1;Acquiring the coordinates of the coupling center of the first port of the first on-chip device according to the known relative coordinate of the coupling center of the first port on the first on-chip device and the identification point of the identification point of the coupling center and the coordinate b1 of the identification point of the coupling center A1;

根据第二片上器件的第一端口的耦合中心与耦合中心的标识点的已知相对坐标及耦合中心的标识点的坐标b2,获取第二片上器件的第一端口的耦合中心的坐标a2。The coordinate a2 of the coupling center of the first port of the second on-chip device is obtained according to the known relative coordinate of the coupling center of the first port of the second on-chip device and the identification point of the coupling point of the coupling center and the coordinate b2 of the identification point of the coupling center.

即在第一片上器件及第二片上器件固定在衬底上时,首先在第一片上器件及第二片上器件上查找一个比较容易测量的点作为耦合中心的标识点,并且测量出耦合中心的标识点与耦合中心之间的距离。在第一片上器件及第二片上器件安装在或者形成在衬底上后,在衬底上选择一个位置作为原点,并建立三维坐标系,之后,测量第一片上器件的耦合中心的标识点在坐标系中的坐标b1,以及测量第二片上器件的耦合中心的标识点在坐标系中的坐标b2,并通过测量的b1及b2以及已知的耦合中心与耦合中心的标识点坐标得到耦合中心的坐标a1和a2。That is, when the first on-chip device and the second on-die device are fixed on the substrate, first, a point which is relatively easy to measure is searched for as a coupling center point on the first on-chip device and the second on-chip device, and the coupling is measured. The distance between the center's identification point and the coupling center. After the first on-chip device and the second on-die device are mounted on or formed on the substrate, a position is selected on the substrate as an origin, and a three-dimensional coordinate system is established, and then the identification of the coupling center of the device on the first chip is measured. The coordinate b1 of the point in the coordinate system, and the coordinate b2 of the identification point of the coupling center of the device on the second chip in the coordinate system, and obtained by the measured b1 and b2 and the known coupling center and the coordinate point of the coupling center The coordinates a1 and a2 of the coupling center.

在得到a1及a2后,a1及a2之间的直线连接线即为波导结构的设置位置,在具体设置时,可以通过激光直写技术在所述辅助耦合层中形成波导结构。After a1 and a2 are obtained, the straight line connecting lines between a1 and a2 is the installation position of the waveguide structure, and in a specific arrangement, the waveguide structure can be formed in the auxiliary coupling layer by laser direct writing technique.

本发明提供了一种通信设备,该通信设备包括信号发射设备,以及信号接收设备,还包括设置在所述信号发射设备与所述信号接收设备之间并用于信号连接所述信号发射设备与所述信号接收设备的上述任一项所述的光通信组件。The present invention provides a communication device including a signal transmitting device, and a signal receiving device, further comprising a signal transmitting device disposed between the signal transmitting device and the signal receiving device and configured to signally connect the signal transmitting device and the An optical communication component according to any of the above-mentioned items of the signal receiving device.

在上述方案中,在上述实施方案中,通过先在第一片上器件与第二片上器件之间形成辅助耦合层,之后再通过在辅助耦合层制备出波导结构,从而降低了第一片上器件的第一端口和第二片上器件的第二端口的对准精度要求,提高了光通信组件在制备时的成品率,提高了光通信组件的生产效率。进而提高了通信设备的生产效率以及通信效果。In the above aspect, in the above embodiment, the auxiliary coupling layer is formed between the first on-chip device and the second on-chip device, and then the waveguide structure is prepared in the auxiliary coupling layer, thereby reducing the first on-chip The alignment accuracy requirements of the first port of the device and the second port of the second on-chip device improve the yield of the optical communication component during preparation and improve the production efficiency of the optical communication component. Thereby, the production efficiency and communication effect of the communication device are improved.

附图说明DRAWINGS

图1为本发明实施例提供的光通信组件的俯视图;1 is a top plan view of an optical communication component according to an embodiment of the present invention;

图2为本发明实施例提供的光通信组件的侧视图;2 is a side view of an optical communication component according to an embodiment of the present invention;

图3为本发明另一实施例提供的光通信组件的结构示意图;3 is a schematic structural diagram of an optical communication component according to another embodiment of the present invention;

图4为本发明实施例提供的光通信组件的制备流程图;4 is a flow chart of preparing an optical communication component according to an embodiment of the present invention;

图5为本发明实施例提供的光通信组件的制备流程图。FIG. 5 is a flowchart of preparing an optical communication component according to an embodiment of the present invention.

附图标记:Reference mark:

1-衬底 2-辅助耦合层 21-波导结构1-substrate 2-auxiliary coupling layer 21-waveguide structure

3-第一片上器件 4-第二片上器件3-first on-chip device 4-second on-chip device

具体实施方式 detailed description

为了使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明作进一步地详细描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。The present invention will be further described in detail with reference to the accompanying drawings, in which FIG. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

一并参考图1及图2,本发明实施例还提供了一种光通信组件,该通信组件包括衬底1,设置在衬底1上的第一片上器件3及第二片上器件4;其中,第一片上器件3具有第一端口,第二片上器件4具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;还包括:Referring to FIG. 1 and FIG. 2 together, an embodiment of the present invention further provides an optical communication component, comprising: a substrate 1, a first on-chip device 3 and a second on-chip device 4 disposed on the substrate 1; Wherein, the first on-chip device 3 has a first port, the second on-chip device 4 has a second port, and the first port and the second port have a height difference in a direction perpendicular to the substrate;

设置在第一片上器件3和第二片上器件4之间的辅助耦合层2,且辅助耦合层2包裹住第一端口及第二端口,辅助耦合层2内倾斜设置有将第一端口与第二端口连通的波导结构21。An auxiliary coupling layer 2 disposed between the first on-chip device 3 and the second on-chip device 4, and the auxiliary coupling layer 2 encloses the first port and the second port, and the auxiliary coupling layer 2 is obliquely disposed with the first port and The second port is connected to the waveguide structure 21.

在上述实施例中,通过先在第一片上器件3与第二片上器件4之间形成辅助耦合层2,之后再通过在辅助耦合层2制备出波导结构21,从而降低了第一片上器件的第一端口和第二片上器件的第二端口的对准精度要求,提高了光通信组件在制备时的成品率,同时提高了光通信组件的生产效率。In the above embodiment, the auxiliary coupling layer 2 is formed between the first on-chip device 3 and the second on-chip device 4, and then the waveguide structure 21 is prepared in the auxiliary coupling layer 2, thereby reducing the first wafer. The alignment accuracy requirements of the first port of the device and the second port of the second on-chip device improve the yield of the optical communication component at the time of preparation, and at the same time improve the production efficiency of the optical communication component.

在本实施例提供的光通信组件中,由于波导结构21采用后期形成的方式,因此,在具体设置时,第一片上器件3的第一端口与第二片上器件4的第二端口可以处于不同的高度,如图2所示,在一个具体的方案中,第一片上器件3的第一端口及第二片上器件4的第二端口之间具有高度差(该高度差为以图2所示的光通信组件的放置方向为参考方向时,在竖直方向上的高度差),辅助耦合层2内刻蚀的波导结构21为倾斜设置。通过上述方式,使得第一片上器件3和第二片上器件4在设置时,位置更加灵活,可以使用不同高度的片上器件作为光传输的部件,增大了光通信组件的器件可选择性。In the optical communication component provided in this embodiment, since the waveguide structure 21 is formed in a later manner, the first port of the first on-chip device 3 and the second port of the second on-chip device 4 may be in a specific arrangement. Different heights, as shown in FIG. 2, in a specific scheme, there is a height difference between the first port of the first on-chip device 3 and the second port of the second on-chip device 4 (the height difference is as shown in FIG. 2 When the placement direction of the optical communication unit shown is the reference direction, the height difference in the vertical direction), the waveguide structure 21 etched in the auxiliary coupling layer 2 is inclined. In the above manner, the first on-chip device 3 and the second on-chip device 4 are made more flexible when disposed, and different levels of on-chip devices can be used as components for optical transmission, which increases the device selectivity of the optical communication component.

作为一个优选的方案,为了降低光信号在传播时的耗损,该波导结构采用直线型波导。但是应当理解的是,本实施例提供的波导结构不仅限于上述的直线型,还可以采用其他的形式,如弯曲的形式。As a preferred solution, in order to reduce the loss of the optical signal during propagation, the waveguide structure employs a linear waveguide. However, it should be understood that the waveguide structure provided by the present embodiment is not limited to the above-described linear type, and other forms such as a curved form may be employed.

在具体的一个方案中,如图3所示,第一片上器件3及第二片上器件4均为多个,且多个第一片上器件3与多个第二片上器件4一一对应;辅助耦合层2内刻蚀有与每对第一片上器件3及第二片上器件对应的波导结构21。继续参考图3,本实施例提供的衬底1中,设置了两列片上器件,其中一列为第一片上器件3,另一列为第二片上器件4,且位于同一排的第一片上器件3和第二片上器件4为一对,且两者之间通过波导结构21连通,在具体设置时,多个第一片上器件3及第二片上器件4共用一个辅助耦合层2,只需在辅助耦合层2中形成针对每对片上器件的波导结构21即可,从而简化了光通信器件的结构组成,降低了光通信组件的安装精度,提高了光通信组件的生产效率。In a specific solution, as shown in FIG. 3, the first on-chip device 3 and the second on-chip device 4 are multiple, and the plurality of first on-chip devices 3 and the plurality of second on-chip devices 4 are in one-to-one correspondence. The auxiliary coupling layer 2 is etched with a waveguide structure 21 corresponding to each pair of the first on-chip device 3 and the second on-chip device. With continued reference to FIG. 3, in the substrate 1 provided in this embodiment, two columns of on-chip devices are disposed, one of which is the first on-chip device 3 and the other column is the second on-chip device 4, and is located on the first slice of the same row. The device 3 and the second on-chip device 4 are a pair, and the two are connected by a waveguide structure 21. In a specific arrangement, the plurality of first on-chip devices 3 and the second on-chip device 4 share an auxiliary coupling layer 2, only It is necessary to form the waveguide structure 21 for each pair of on-chip devices in the auxiliary coupling layer 2, thereby simplifying the structural composition of the optical communication device, reducing the mounting precision of the optical communication component, and improving the production efficiency of the optical communication component.

请参考图4,图4示出了本实施例提供的光通信组件的制备流程图。Please refer to FIG. 4. FIG. 4 is a flow chart showing the preparation of the optical communication component provided by this embodiment.

本发明提供了一种光通信组件的制备方法用以降低光通信组件的,该方法包括以下步骤:The present invention provides a method of fabricating an optical communication component for reducing an optical communication component, the method comprising the steps of:

将第一片上器件及第二片上器件固定在衬底的同一表面,其中,所述第一片上器件具有第一端口,所述第二片上器件具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;Fixing the first on-chip device and the second on-die device on the same surface of the substrate, wherein the first on-chip device has a first port, the second on-chip device has a second port, and the first port And the second port has a height difference in a direction perpendicular to the substrate;

在第一片上器件与第二片上器件之间形成辅助耦合层,且所述辅助耦合层包裹住 所述第一端口及第二端口;Forming an auxiliary coupling layer between the first on-chip device and the second on-chip device, and the auxiliary coupling layer is wrapped The first port and the second port;

在形成的辅助耦合层中制作连通所述第一端口与所述第二端口的波导结构。A waveguide structure that connects the first port and the second port is formed in the formed auxiliary coupling layer.

在上述方法中,通过先将第一片上器件及第二片上器件固定在衬底上,之后在第一片上器件及第二片上器件之间包裹辅助耦合层,最后再通过在辅助耦合层内形成波导结构的方法,改善了第一片上器件的第一端口、第二片上器件的第二端口及辅助耦合层的对位精度要求,由于辅助耦合层中的波导结构采用安装后才进行加工,因此,在第一片上器件及第二片上器件安装时,第一片上器件的第一端口及第二片上器件的第二端口只需大致对准即可(位置偏差可能到几十微米的量级),从而降低了第一片上器件、第二片上器件及辅助耦合层对位时的精度。提高光通信组件的成品率以及生产效率。此外,由于波导结构采用后期加工的效果,从而保证了波导结构连通第一片上器件及第二片上器件的准确度,进而提高了光通信组件的通信效果。In the above method, the first on-chip device and the second on-chip device are first fixed on the substrate, and then the auxiliary coupling layer is wrapped between the first on-chip device and the second on-chip device, and finally through the auxiliary coupling layer. The method of forming the waveguide structure therein improves the alignment accuracy requirements of the first port of the first on-chip device, the second port of the second on-chip device, and the auxiliary coupling layer, since the waveguide structure in the auxiliary coupling layer is installed Processing, therefore, when the first on-chip device and the second on-die device are mounted, the first port of the first on-chip device and the second port of the second on-chip device need only be substantially aligned (positional deviation may be tens On the order of micrometers, thereby reducing the accuracy of the alignment of the first on-chip device, the second on-chip device, and the auxiliary coupling layer. Improve the yield and production efficiency of optical communication components. In addition, since the waveguide structure adopts the effect of post-processing, the accuracy of the waveguide structure connecting the first on-chip device and the second on-chip device is ensured, thereby improving the communication effect of the optical communication component.

为了方便理解本实施例提供的光通信组件的制备方法,下面结合具体的附图以及实施例对其进行详细的描述。In order to facilitate the understanding of the preparation method of the optical communication component provided by the embodiment, the following detailed description will be made in conjunction with the specific drawings and embodiments.

参考图5,图5示出了本发明实施例提供的光通信组件的制备方法。同时,为了方便理解,可以一并参考图1及图2,其中,图1示出了通过本方法制备成的光通信组件的俯视图,图2示出了通过本方法制备的光通信组件的侧视图。Referring to FIG. 5, FIG. 5 illustrates a method of fabricating an optical communication component according to an embodiment of the present invention. Meanwhile, for ease of understanding, reference may be made to FIG. 1 and FIG. 2 together, wherein FIG. 1 shows a plan view of an optical communication component prepared by the method, and FIG. 2 shows a side of the optical communication component prepared by the method. view.

本发明实施例提供的光通信组件的安装精度提供了一种光通信组件的制备方法,如图5所示,该制备方法包括以下步骤:The mounting precision of the optical communication component provided by the embodiment of the present invention provides a method for preparing an optical communication component. As shown in FIG. 5, the preparation method includes the following steps:

步骤001:将第一片上器件3及第二片上器件4固定在衬底1的同一表面;其中,第一片上器件3具有第一端口,第二片上器件4具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;Step 001: fixing the first on-chip device 3 and the second on-chip device 4 on the same surface of the substrate 1; wherein the first on-chip device 3 has a first port, and the second on-chip device 4 has a second port, and The first port and the second port have a height difference in a direction perpendicular to the substrate;

具体的,第一片上器件3、第二片上器件4及衬底1可以采用不同的结构形式,如:第一片上器件3、第二片上器件4与衬底1采用单独的结构时,此时在组装时,第一片上器件3、第二片上器件4采用连接方法固定在衬底1上形成一个稳定的连接,在具体连接时,可以采用倒装焊、键合或者粘接等不同的连接方式,将第一片上器件3和第二片上器件4固定在衬底1的同一表面;在第一片上器件3、第二片上器件4及衬底1为一体结构时,第一片上器件3、第二片上器件4为在衬底1的同一表面直接形成第一片上器件3及第二片上器件4。在采用该方式时,该衬底1可以为硅衬底、玻璃等能够传播光的材质。较佳的该衬底1为硅材料制备的衬底。在具体的制备过程时,以硅材料为例,首先选用一块硅材料,之后在硅材料上进行刻蚀或者雕刻的加工方式,在硅材料上直接刻蚀出或雕刻出第一片上器件3及第二片上器件4,从而一体形成第一片上器件3、第二片上器件4及硅衬底1。Specifically, the first on-chip device 3, the second on-chip device 4, and the substrate 1 may adopt different structural forms, such as: when the first on-chip device 3, the second on-chip device 4, and the substrate 1 have a separate structure, At the time of assembly, the first on-chip device 3 and the second on-chip device 4 are fixed on the substrate 1 by a connection method to form a stable connection, and in the specific connection, flip-chip bonding, bonding or bonding may be employed. The first on-chip device 3 and the second on-chip device 4 are fixed on the same surface of the substrate 1 in different connection manners; when the first on-chip device 3, the second on-chip device 4, and the substrate 1 are integrated structures, The upper device 3 and the second on-chip device 4 directly form the first on-chip device 3 and the second on-chip device 4 on the same surface of the substrate 1. In this manner, the substrate 1 may be a material such as a silicon substrate or glass that can propagate light. Preferably, the substrate 1 is a substrate made of a silicon material. In the specific preparation process, taking the silicon material as an example, first selecting a silicon material, and then etching or engraving the silicon material, directly etching or engraving the first on-chip device on the silicon material 3 And the second on-chip device 4, thereby integrally forming the first on-chip device 3, the second on-chip device 4, and the silicon substrate 1.

步骤002:以衬底1上的设定位置为原点,测量第一片上器件3的第一端口的耦合中心的标识点的坐标:b1=(x1,y1,z1),及第二片上器件4的第二端口的耦合中心的标识点的坐标b2=(x2,y2,z2);Step 002: measuring the coordinates of the identification point of the coupling center of the first port of the first on-chip device 3 with the set position on the substrate 1 as the origin: b1=(x1, y1, z1), and the second on-chip device 4, the coordinate of the identification point of the coupling center of the second port b2 = (x2, y2, z2);

具体的,在衬底1上选择一个位置作为原点,在衬底1为长方体时,该位置点可以选择为衬底1上的一个边角点、一个边的中心点,或者位于第一片上器件3及第二片上器件4之间的一个点作为原点,并根据该原点建立三维坐标系,之后,测量第一片上器件3的耦合中心的标识点在坐标系中的坐标b1,以及测量第二片上器件4的耦合中心的标识点在坐标系中的坐标b2,一并参考图1及图2,图1及图2示出了一种光通信组件在 制备成后的结构,其中,如图2所示,该光通信组件中的标识点的高度不同,因此,测量的坐标b1及b2包含在x、y、z方向的值,即b1=(x1,y1,z1)、b2=(x2,y2,z2)。Specifically, a position is selected on the substrate 1 as an origin. When the substrate 1 is a rectangular parallelepiped, the position point may be selected as a corner point on the substrate 1, a center point of one side, or on the first sheet. A point between the device 3 and the second on-chip device 4 serves as an origin, and a three-dimensional coordinate system is established according to the origin, after which the coordinate b1 of the identification point of the coupling center of the first on-chip device 3 in the coordinate system is measured, and the measurement is performed. The coordinate b2 of the coupling center of the coupling center of the second on-chip device 4 is in the coordinate system. Referring to FIG. 1 and FIG. 2 together, FIG. 1 and FIG. 2 show an optical communication component. The structure after preparation, wherein, as shown in FIG. 2, the heights of the marker points in the optical communication component are different, and therefore, the measured coordinates b1 and b2 include values in the x, y, and z directions, that is, b1=(x1) , y1, z1), b2 = (x2, y2, z2).

步骤003:获取第一片上器件3的第一端口的耦合中心坐标a1及第二片上器件4的第二端口的耦合中心坐标a2;Step 003: Acquire a coupling center coordinate a1 of the first port of the first on-chip device 3 and a coupling center coordinate a2 of the second port of the second on-chip device 4;

具体的,根据第一片上器件3上的第一端口的耦合中心与耦合中心的标识点的已知相对坐标及耦合中心的标识点的坐标b1,获取第一片上器件3的第一端口的耦合中心的坐标a1;根据第二片上器件4的第一端口的耦合中心与耦合中心的标识点的已知相对坐标及耦合中心的标识点的坐标b2,获取第二片上器件4的第一端口的耦合中心的坐标a2。Specifically, the first port of the first on-chip device 3 is obtained according to the known relative coordinate of the coupling center of the first port on the first on-chip device 3 and the identification point of the coupling center and the coordinate b1 of the identification point of the coupling center. Coordinate a1 of the coupling center; obtaining the first of the second on-chip device 4 according to the known relative coordinate of the coupling center of the first port of the second on-chip device 4 and the identification point of the coupling center and the coordinate b2 of the identification point of the coupling center The coordinate a2 of the coupling center of the port.

在第一片上器件3及第二片上器件4固定在衬底1上时,首先在第一片上器件3及第二片上器件4上查找一个比较容易测量的点作为耦合中心的标识点,并且测量出耦合中心的标识点与耦合中心之间的相对坐标,具体的,以标识点为原点,建立坐标系,测量耦合中心的坐标,或者以耦合中心为坐标,建立坐标系,测量标识点的坐标,从而获取耦合中心与耦合中心的标识点之间的相对坐标;在结合测量的b1及b2得到耦合中心的坐标a1和a2。When the first on-chip device 3 and the second on-chip device 4 are fixed on the substrate 1, first, on the first on-chip device 3 and the second on-chip device 4, a point which is relatively easy to measure is used as a mark point of the coupling center. And measuring the relative coordinates between the identification point of the coupling center and the coupling center, specifically, using the identification point as the origin, establishing a coordinate system, measuring the coordinates of the coupling center, or establishing a coordinate system with the coupling center as a coordinate, and measuring the identification point The coordinates of the coupling center and the identification point of the coupling center are obtained; the coordinates a1 and a2 of the coupling center are obtained in combination with the measured b1 and b2.

步骤004:在第一片上器件3与第二片上器件4之间形成辅助耦合层2,且辅助耦合层2包裹住第一片上器件3的第一端口及第二片上器件4的第二端口;Step 004: forming an auxiliary coupling layer 2 between the first on-chip device 3 and the second on-chip device 4, and the auxiliary coupling layer 2 encloses the first port of the first on-chip device 3 and the second on the second on-chip device 4. port;

具体的,其中的辅助耦合层2为聚合物材料制作的辅助耦合层。如:聚氯乙烯、聚乙烯、聚丙烯等。在具体制备时,将液态或胶状的聚合物填充在第一片上器件3和第二片上器件4之间,并包裹第一片上器件3的第一端口及第二片上器件4的第二端口,将液态或胶状的聚合物凝固形成辅助耦合层2。即通过液态或胶状的聚合物包裹住第一片上器件3的第一端口及第二片上器件4的第二端口,之后再通过不同的固化方式将聚合物固化形成辅助耦合层2,在具体固化时,如采用加热或紫外线照射的方式将液态或胶状的聚合物固化形成辅助耦合层2。当然还可以采用其他的已知的固化方法将聚合物固化形成辅助耦合层2。Specifically, the auxiliary coupling layer 2 is an auxiliary coupling layer made of a polymer material. Such as: polyvinyl chloride, polyethylene, polypropylene and so on. At the time of preparation, a liquid or gel-like polymer is filled between the first on-chip device 3 and the second on-chip device 4, and wraps the first port of the first on-chip device 3 and the second on-chip device 4. The two ports solidify the liquid or gel polymer to form the auxiliary coupling layer 2. That is, the first port of the first on-chip device 3 and the second port of the second on-chip device 4 are wrapped by a liquid or gel polymer, and then the polymer is cured by different curing methods to form the auxiliary coupling layer 2, In the specific curing, the liquid or gel polymer is cured by heating or ultraviolet irradiation to form the auxiliary coupling layer 2. It is of course also possible to cure the polymer to form the auxiliary coupling layer 2 by other known curing methods.

步骤005:在形成的辅助耦合层2中制作连通第一片上器件3的第一端口与第二片上器件4的第二端口的波导结构21。Step 005: A waveguide structure 21 that communicates with the first port of the first on-chip device 3 and the second port of the second on-chip device 4 is formed in the formed auxiliary coupling layer 2.

在具体设置时,通过步骤003获取第一片上器件3的第一端口的耦合中心坐标a1及第二片上器件4的第二端口的耦合中心坐标a2;在a1与a2的连线之间通过刻蚀在辅助耦合层2中形成波导结构21。形成波导的意思为在辅助耦合层2中有一块区域,它以内的折射率大于它以外的折射率,这样就可以对光进行束缚传播(类似于一个水管)。In a specific setting, the coupling center coordinate a1 of the first port of the first on-chip device 3 and the coupling center coordinate a2 of the second port of the second on-chip device 4 are obtained through step 003; pass between the lines of a1 and a2 The etching forms the waveguide structure 21 in the auxiliary coupling layer 2. The formation of the waveguide means that there is a region in the auxiliary coupling layer 2, and the refractive index within it is greater than the refractive index outside it, so that the light can be bound and propagated (similar to a water pipe).

即通过确定第一片上器件3的第一端口的耦合中心坐标a1以及第二片上器件4的第二端口的耦合中心坐标a2,之后在两个坐标之间的连线上形成波导结构21,从而保证形成的波导结构21能够将第一片上器件3的第一端口与第二片上器件4的第二端口导通。在具体设置时,可以通过激光直写技术在辅助耦合层2中形成波导结构21。That is, by determining the coupling center coordinate a1 of the first port of the first on-chip device 3 and the coupling center coordinate a2 of the second port of the second on-chip device 4, then forming the waveguide structure 21 on the line between the two coordinates, It is thereby ensured that the formed waveguide structure 21 is capable of conducting the first port of the first on-chip device 3 and the second port of the second on-chip device 4. In a specific arrangement, the waveguide structure 21 can be formed in the auxiliary coupling layer 2 by a laser direct writing technique.

通过上述方式形成的波导结构21满足以下特点:The waveguide structure 21 formed by the above means satisfies the following characteristics:

1)具有一个连续的区域,该区域中的折射率大于该区域外的折射率;1) having a continuous region in which the refractive index is greater than the refractive index outside the region;

2)该区域一端与第一片上器件3的第一端口相连,另一端与第二片上器件4的第二端口相连;2) one end of the region is connected to the first port of the first on-chip device 3, and the other end is connected to the second port of the second on-chip device 4;

3)该区域与第一片上器件3的第一端口相连的部分以a1为中心坐标或者包含a1; 3) the portion of the region connected to the first port of the first on-chip device 3 is centered on a1 or contains a1;

4)该区域与第二片上器件4的第二端口相连的部分以a2为中心坐标或者包含a2;4) the portion of the area connected to the second port of the second on-chip device 4 is centered on a2 or contains a2;

5)信号光在该光波导中传输时,能够被该光波导有效的束缚,而不产生较大的损耗。5) When the signal light is transmitted in the optical waveguide, it can be effectively restrained by the optical waveguide without generating a large loss.

通过上述描述可以看出,本实施例提供的光通信组件的制备方法,通过先将第一片上器件3及第二片上器件4固定在衬底1上,之后在第一片上器件3及第二片上器件4之间包裹辅助耦合层2,最后再通过在辅助耦合层2内形成波导结构21的方法,改善了第一片上器件3的第一端口、第二片上器件4的第二端口及辅助耦合层2的对位精度要求,提高了光通信组件的光耦合效率,进而提高光通信组件的成品率以及生产效率。It can be seen from the above description that the optical communication component provided by the embodiment is prepared by first fixing the first on-chip device 3 and the second on-chip device 4 on the substrate 1, and then on the first on-chip device 3 and The second on-chip device 4 encloses the auxiliary coupling layer 2, and finally the second port of the first on-chip device 3 and the second on-chip device 4 are improved by forming the waveguide structure 21 in the auxiliary coupling layer 2. The alignment accuracy requirements of the port and the auxiliary coupling layer 2 improve the optical coupling efficiency of the optical communication component, thereby improving the yield and production efficiency of the optical communication component.

本发明实施例还提供了一种通信设备,该通信设备包括信号发射设备,以及信号接收设备,还包括设置在所述信号发射设备与所述信号接收设备之间并用于信号连接所述信号发射设备与所述信号接收设备的上述任一项所述的光通信组件。The embodiment of the present invention further provides a communication device, including a signal transmitting device, and a signal receiving device, further comprising a signal transmitting device disposed between the signal transmitting device and the signal receiving device and configured to signal the signal transmission An optical communication component according to any of the above-mentioned items of the device and the signal receiving device.

在上述实施例中,在上述实施方案中,通过先在第一片上器件3与第二片上器件4之间形成辅助耦合层2,之后再通过在辅助耦合层2制备出波导结构21,从而降低了第一片上器件的第一端口和第二片上器件的第二端口的对准精度要求,提高了光通信组件在制备时的成品率,提高了光通信组件的生产效率。进而提高了通信设备的生产效率以及通信效果。In the above embodiment, in the above embodiment, the auxiliary coupling layer 2 is formed between the first on-chip device 3 and the second on-chip device 4, and then the waveguide structure 21 is prepared by the auxiliary coupling layer 2, thereby The alignment precision requirements of the first port of the first on-chip device and the second port of the second on-chip device are reduced, the yield of the optical communication component at the time of preparation is improved, and the production efficiency of the optical communication component is improved. Thereby, the production efficiency and communication effect of the communication device are improved.

显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。 It is apparent that those skilled in the art can make various modifications and variations to the invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and modifications of the invention

Claims (12)

一种光通信组件,其特征在于,包括衬底,设置在衬底上的第一片上器件及第二片上器件,其中,所述第一片上器件具有第一端口,所述第二片上器件具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;还包括:An optical communication assembly, comprising: a substrate, a first on-chip device disposed on the substrate; and a second on-chip device, wherein the first on-chip device has a first port, the second on-chip The device has a second port, and the first port and the second port have a height difference in a direction perpendicular to the substrate; 设置在所述第一片上器件和第二片上器件之间的辅助耦合层,且所述辅助耦合层包裹住所述第一端口及第二端口,所述辅助耦合层内倾斜设置有将所述第一端口与所述第二端口连通的波导结构。An auxiliary coupling layer disposed between the first on-chip device and the second on-chip device, and the auxiliary coupling layer encloses the first port and the second port, wherein the auxiliary coupling layer is obliquely disposed to be A waveguide structure in which the first port is in communication with the second port. 如权利要求1所述的光通信组件,其特征在于,所述第一片上器件及所述第二片上器件均为多个,且多个第一片上器件与多个第二片上器件一一对应;所述辅助耦合层内刻蚀有与每对第一片上器件及第二片上器件对应的波导结构。The optical communication component according to claim 1, wherein said first on-chip device and said second on-chip device are plurality, and said plurality of first on-chip devices and said plurality of second on-chip devices Corresponding to; the auxiliary coupling layer is etched with a waveguide structure corresponding to each pair of the first on-chip device and the second on-chip device. 如权利要求1或2所述的光通信组件,其特征在于,所述波导结构为直线型波导结构。The optical communication module according to claim 1 or 2, wherein the waveguide structure is a linear waveguide structure. 一种光通信组件的制备方法,其特征在于,包括以下步骤:A method for preparing an optical communication component, comprising the steps of: 将第一片上器件及第二片上器件固定在衬底的同一表面,其中,所述第一片上器件具有第一端口,所述第二片上器件具有第二端口,且所述第一端口与所述第二端口在垂直于衬底的方向具有高差;Fixing the first on-chip device and the second on-die device on the same surface of the substrate, wherein the first on-chip device has a first port, the second on-chip device has a second port, and the first port And the second port has a height difference in a direction perpendicular to the substrate; 在第一片上器件与第二片上器件之间形成辅助耦合层,且所述辅助耦合层包裹住所述第一端口及第二端口;Forming an auxiliary coupling layer between the first on-chip device and the second on-chip device, and the auxiliary coupling layer wraps the first port and the second port; 在形成的辅助耦合层中制作连通所述第一端口与所述第二端口的波导结构。A waveguide structure that connects the first port and the second port is formed in the formed auxiliary coupling layer. 如权利要求4所述的光通信组件的制备方法,其特征在于,所述将第一片上器件及第二片上器件固定在衬底的同一表面具体为:The method of fabricating an optical communication module according to claim 4, wherein the fixing the first on-chip device and the second on-chip device to the same surface of the substrate is specifically: 通过倒装焊或键合的方式将所述第一片上器件和第二片上器件粘贴到衬底的同一表面;或Pasting the first on-chip device and the second on-chip device onto the same surface of the substrate by flip chip bonding or bonding; or 在衬底的同一表面直接形成第一片上器件及第二片上器件。A first on-chip device and a second on-chip device are formed directly on the same surface of the substrate. 如权利要求4所述的光通信组件的制备方法,其特征在于,所述辅助耦合层为聚合物材料制作的辅助耦合层。The method of fabricating an optical communication module according to claim 4, wherein the auxiliary coupling layer is an auxiliary coupling layer made of a polymer material. 如权利要求4所述的光通信组件的制备方法,其特征在于,所述在第一片上器件与第二片上器件之间形成辅助耦合层,且所述辅助耦合层包裹住所述第一片上器件的第一端口及第二片上器件的第二端口具体为:The method of fabricating an optical communication module according to claim 4, wherein said auxiliary coupling layer is formed between said first on-chip device and said second on-chip device, and said auxiliary coupling layer wraps said first sheet The first port of the upper device and the second port of the second on-chip device are specifically: 将液态或胶状的聚合物填充在第一片上器件和第二片上器件之间,并包裹第一片上器件的第一端口及第二片上器件的第二端口,将液态或胶状的聚合物凝固形成辅助耦合层。Filling a liquid or gel-like polymer between the first on-chip device and the second on-chip device and wrapping the first port of the first on-chip device and the second port of the second on-chip device in a liquid or gel state The polymer solidifies to form an auxiliary coupling layer. 如权利要求7所述的光通信组件的制备方法,其特征在于,所述将液态或胶状的聚合物凝固形成辅助耦合层具体为:The method of manufacturing an optical communication module according to claim 7, wherein the solidifying the liquid or gel polymer to form the auxiliary coupling layer is specifically: 通过加热或紫外线照射将所述液态或胶状的聚合物固化形成辅助耦合层。The liquid or gelatinous polymer is cured by heating or ultraviolet irradiation to form an auxiliary coupling layer. 如权利要求4~8任一项所述的光通信组件的制备方法,其特征在于,A method of manufacturing an optical communication module according to any one of claims 4 to 8, wherein 所述在形成的辅助耦合层中制作连通所述第一端口与所述第二端口的波导结构具体为:The waveguide structure connecting the first port and the second port in the formed auxiliary coupling layer is specifically: 获取第一片上器件的第一端口的耦合中心坐标a1及第二片上器件的第二端口的 耦合中心坐标a2;Obtaining a coupling center coordinate a1 of the first port of the first on-chip device and a second port of the second on-chip device Coupling center coordinate a2; 在所述a1与a2的连线之间通过刻蚀在所述辅助耦合层中形成波导结构。A waveguide structure is formed in the auxiliary coupling layer by etching between the lines of a1 and a2. 如权利要求9所述的光通信组件的制备方法,其特征在于,所述获取第一片上器件的第一端口的耦合中心坐标a1及第二片上器件的第二端口的耦合中心坐标a2具体为:The method of fabricating an optical communication component according to claim 9, wherein the coupling center coordinate a1 of the first port of the first on-chip device and the coupling center coordinate a2 of the second port of the second on-chip device are specific for: 在将第一片上器件及第二片上器件固定在衬底的同一表面后,以衬底上的设定位置为原点,测量第一片上器件的第一端口的耦合中心的标识点的坐标:b1=(x1,y1,z1),及第二片上器件的第二端口的耦合中心的标识点的坐标b2=(x2,y2,z2);After the first on-chip device and the second on-die device are fixed on the same surface of the substrate, the coordinates of the identification point of the coupling center of the first port of the first on-chip device are measured with the set position on the substrate as the origin. :b1=(x1, y1, z1), and the coordinate of the identification point of the coupling center of the second port of the second on-chip device b2=(x2, y2, z2); 根据第一片上器件上的第一端口的耦合中心与耦合中心的标识点的已知相对坐标及耦合中心的标识点的坐标b1,获取第一片上器件的第一端口的耦合中心的坐标a1;Acquiring the coordinates of the coupling center of the first port of the first on-chip device according to the known relative coordinate of the coupling center of the first port on the first on-chip device and the identification point of the identification point of the coupling center and the coordinate b1 of the identification point of the coupling center A1; 根据第二片上器件的第一端口的耦合中心与耦合中心的标识点的已知相对坐标及耦合中心的标识点的坐标b2,获取第二片上器件的第一端口的耦合中心的坐标a2。The coordinate a2 of the coupling center of the first port of the second on-chip device is obtained according to the known relative coordinate of the coupling center of the first port of the second on-chip device and the identification point of the coupling point of the coupling center and the coordinate b2 of the identification point of the coupling center. 如权利要求9所述的光通信组件的制备方法,其特征在于,所述在所述a1及a2的连线之间通过刻蚀在所述辅助耦合层中形成波导结构具体为:在所述a1及a2的连线之间通过激光直写技术在所述辅助耦合层中形成波导结构。The method of fabricating an optical communication module according to claim 9, wherein said forming a waveguide structure in said auxiliary coupling layer by etching between said lines of a1 and a2 is specifically: A waveguide structure is formed in the auxiliary coupling layer by a laser direct writing technique between the lines a1 and a2. 一种通信设备,其特征在于,包括信号发射设备,以及信号接收设备,还包括设置在所述信号发射设备与所述信号接收设备之间并用于信号连接所述信号发射设备与所述信号接收设备的如权利要求1~3任一项所述的光通信组件。 A communication device, comprising: a signal transmitting device, and a signal receiving device, further comprising: disposed between the signal transmitting device and the signal receiving device and configured to signally connect the signal transmitting device with the signal receiving The optical communication component according to any one of claims 1 to 3 of the device.
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