WO2018040588A1 - Magnetron element and magnetron sputtering apparatus - Google Patents

Abstract

Disclosed are a magnetron element and a magnetron sputtering apparatus. The magnetron element comprises a closed magnetron (1) and a non-closed magnetron (2). A closed plasma path (13) is formed between an inner magnetic pole (11) and an outer magnetic pole (12) of the closed magnetron. A non-closed plasma path (23) is formed between a first magnetic pole (21) and a second magnetic pole (22) of the non-closed magnetron. The closed plasma path and the non-closed plasma path are at least correspondingly located in a radius region from a target centre to a target edge; and the sum of the effective extension length of the closed plasma path in a target radial direction and the effective extension length of the non-closed plasma path in the target radial direction is greater than or equal to the radius of the target. The magnetron element can achieve whole target corrosion of the target, and avoid the presence of particles in a central region of the target, thereby improving the utilization rate of the target, further improving the ionization rate of a metal target during a sputtering process, and at the same time, improving the filling effect of through holes on a wafer.

Description

Magnetron component and magnetron sputtering device Technical field

The present invention relates to the field of magnetron sputtering technology, and in particular to a magnetron element and a magnetron sputtering device.

Background technique

Sputtering refers to the phenomenon in which charged particles (such as argon ions) bombard a solid surface, causing various particles on the surface, such as atoms, molecules or bunches, to escape from the surface of the object. In a magnetron sputtering apparatus, a plasma is generated in a chamber, and positive ions of the plasma are attracted by a cathode negative, bombarding a target in the chamber, knocking out atoms of the target, and depositing on the substrate. In the case of non-reactive sputtering, the gas is an inert gas such as argon. In reactive sputtering, a reactive gas is used together with an inert gas. Magnetron sputtering equipment is widely used in integrated circuits, liquid crystal displays, thin film solar and LED fields.

In order to improve the effect of sputtering, a magnet is used in the vicinity of the target, which can force the electrons in the plasma to move according to a certain orbit, increasing the movement time of the electrons, thereby increasing the chance of electrons colliding with the gas to be ionized, thereby obtaining High density plasma provides high deposition rates. At the same time, the orbit of the electron controlled by the magnet affects the erosion rate of the target at different positions, affecting the life of the target. It also affects the uniformity of deposition of the film.

In order to achieve full target corrosion of the target during sputtering, as shown in Figures 1a to 1c, in the prior art 1, the magnetron 6 adopts a kidney-shaped nested structure as in Figure 1a. The magnetron 6 is fixedly mounted on the magnetron mounting plate 9, and the magnetron mounting plate 9 is fixed on the driving plate 8. The driving plate 8 and the bracket 10 are movably connected by the shaft 14, and the driving plate 8 is rotatable about the shaft 14. A spring 5 is also coupled between the bracket 10 and the drive plate 8; the bracket 10 is movably coupled to the drive shaft 4, and the bracket 10 is rotatable about the drive shaft 4. The drive shaft 4 is correspondingly located at the center of the target. At the beginning of the magnetron sputtering process, the carrier 10 drives the driving board 8 and the magnetron 6 to rotate around the driving shaft 4, such as: driving The shaft 4 rotates counterclockwise at a certain rotational speed such that the centrifugal force of the magnetron 6 exceeds the spring force of the spring 5 when the rotational speed is sufficiently high, and the drive plate 8 and its fixed magnetron mounting plate 9 are turned to the outside around the shaft 14 on the bracket 10. (Fig. 1b), so that the magnetron 6 is correspondingly located in the edge region of the target 7, at which time the edge region of the target 7 is plasma etched under the action of the magnetron 6. On the contrary, when the rotational speed is low, the drive shaft 4 still rotates counterclockwise, but the low rotational speed causes the centrifugal force of the magnetron 6 to be smaller than the elastic force of the spring 5, and the spring 5 winds the drive plate 8 and its fixed magnetron mounting plate 9 The shaft 14 on the bracket 10 is pulled inward (as in Fig. 1c), so that the magnetron 6 is pulled back to the position corresponding to the central region of the target 7, at this time, under the action of the magnetron 6, the plasma The central region of the target 7 is etched. Through the entire process, the positional switching between the edge region and the central region of the corresponding target 7 is controlled by changing the rotational speed of the carrier 10, thereby achieving corrosion of the edge region and the central region of the target 7, Ultimately achieve full target corrosion.

However, in the prior art 1, only the edge region and the central region of the target 7 can be successively corroded by controlling the rotation speed of the carrier 10, that is, the edge region of the target 7 is first etched and then the central region is etched, but this may result in Particles appear in the wafer area corresponding to the central region of the target 7, resulting in a relatively low sputtering process quality and product yield.

In addition, in the prior art 1, since the spring has a problem of loss of elastic performance, it is difficult to accurately control the position of the magnetron by different rotation speeds to achieve full target corrosion.

Summary of the invention

The present invention is directed to the above technical problems existing in the prior art, and provides a magnetron element and a magnetron sputtering apparatus. The magnetron component can achieve full target corrosion of the target, avoid particles in the central region of the target, improve the utilization of the target, and improve the ionization rate of the metal target during sputtering; and improve the through hole on the wafer. The fill effect.

The invention provides a magnetron element for a sputtering target, comprising a closed magnetron and a non-closed magnetron, wherein a closed plasma is formed between an inner magnetic pole and an outer magnetic pole of the closed magnetron a path between the first magnetic pole and the second magnetic pole of the non-closed magnetron forming a non-closed plasma path, the closed plasma path and the non-closed plasma path at least corresponding to the target a center to a radius region of the edge of the target, and the effective extension length of the closed plasma path in the radial direction of the target and the non-closed plasma path are effective in the radial direction of the target The sum of the extension lengths is greater than or equal to the radius of the target.

Preferably, during the rotation of the magnetron element, the areas through which the closed plasma path and the non-closed plasma path pass do not coincide with each other, and the center of rotation of the magnetron element corresponds to In the closed plasma path or the non-closed plasma path, the center of rotation of the magnetron element coincides with the center of the target.

Preferably, an orthographic projection of the closed magnetron in a plane of the target corresponds to an edge region of the target, and an orthographic projection of the non-closed magnetron at a plane of the target is located at the edge The central area of the target.

Preferably, an orthographic projection of the closed magnetron at a plane of the target corresponds to a central region of the target, and an orthographic projection of the non-closed magnetron at a plane of the target is located at the The edge area of the target.

Preferably, the effective extension length of the non-closed plasma path in the radial direction of the target is equal to the diameter length of the target.

Preferably, the outer magnetic pole of the closed magnetron is connected to the first magnetic pole of the non-closed magnetron.

Preferably, the outer magnetic pole of the closed magnetron is used as the first magnetic pole of the non-closed magnetron, and the non-closed plasma is formed between the outer magnetic pole and the second magnetic pole path.

The present invention also provides a magnetron sputtering apparatus comprising a target, further comprising the above-mentioned magnetron element, the magnetron element being disposed directly above the target; further comprising a DC power source and/or a RF power source, a DC power source and/or the RF power source is coupled to the target for The target provides sputtering power.

Preferably, the frequency range of the radio frequency power source is 400k-60MHz.

Preferably, the frequency of the radio frequency power source is 400 kHz, 2 MHz, 13.56 MHz, 40 MHz or 60 MHz.

Advantageous Effects of Invention: The magnetron element provided by the present invention has at least a closed plasma path and a non-closed plasma path corresponding to a radius region located at a center of the target to an edge of the target, and the closed plasma The sum of the effective extension length of the path in the radial direction of the target and the effective extension length of the non-closed plasma path in the radial direction of the target is greater than or equal to the radius of the target, which can not only achieve the target corrosion of the target, but also improve the utilization of the target. Rate; and can avoid particles in the wafer area corresponding to the central region of the target, improve the quality of the magnetron sputtering process and product yield; and, at the same time, apply a DC power supply to the target due to the closed plasma path The reduction in area can increase the power density of the closed plasma path acting on the target, thereby increasing the ionization rate of the target and also improving the filling effect of the via holes on the wafer.

According to the magnetron sputtering device of the present invention, by using the above-described magnetron element, not only the ionization rate of the metal target but also the total target corrosion is achieved.

DRAWINGS

1a is a schematic view showing the movement of a magnetron relative to a target in the prior art;

Figure 1b is a schematic view showing the rotational position of the driving plate relative to the bracket when the rotation speed of the magnetron is high in Figure 1a;

Figure 1c is a schematic view showing the rotational position of the driving plate relative to the bracket when the rotation speed of the magnetron is low in Figure 1a;

2 is a plan view showing the structure of a magnetron element in Embodiment 1 of the present invention;

Figure 3 is a plan view showing another structure of the magnetron element in Embodiment 1 of the present invention;

4 is a top plan view showing still another structure of the magnetron element in Embodiment 1 of the present invention;

Figure 5 is a plan view showing the structure of a magnetron element in Embodiment 2 of the present invention;

Figure 6 is a plan view showing the structure of a magnetron element in Embodiment 3 of the present invention;

Figure 7 is a plan view showing the structure of a magnetron element in Embodiment 4 of the present invention;

Figure 8 is a schematic view showing the structure of a magnetron sputtering apparatus in Embodiment 5 of the present invention.

The reference numerals are as follows:

1. Close the magnetron; 11. Inner magnetic pole; 12. External magnetic pole; 13. Closed plasma path; 2. Non-closed magnetron; 21. First magnetic pole; 22. Second magnetic pole; 23. Non-closed Plasma path; P. rotation center of magnetron element; 3. back plate; 4. drive shaft; 5. spring; 6. magnetron; 7. target; 8. drive plate; 9. magnetron mounting plate 10. Bracket; 14. Shaft; 15. Magnetron component; 16. RF power supply; 17. DC power supply; 18. Control component; 19. Wafer.

detailed description

In order to enable those skilled in the art to better understand the technical solutions of the present invention, a magnetic control element and a magnetron sputtering apparatus provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

Example 1:

The present embodiment provides a magnetron element for sputtering a target, as shown in FIG. 2, comprising a closed magnetron 1 and a non-closed magnetron 2, closing the inner magnetic pole 11 and the outer magnetic pole 12 of the magnetron 1. A closed plasma path 13 is formed between the first magnetic pole 21 and the second magnetic pole 22 of the non-closed magnetron 2 to form a non-closed plasma path 23, a closed plasma path 13 and a non-closed plasma path. 23 corresponds at least to a radius region located at the center of the target to the edge of the target, and the effective extension length of the closed plasma path 13 in the radial direction of the target and the effective extension length of the non-closed plasma path 23 in the radial direction of the target The sum is greater than or equal to the radius of the target.

As in Figure 2, the closed plasma path 13 and the non-closed plasma path 23 Corresponding to a radius region located at the center of the target to the edge of the target, and the effective extension length of the closed plasma path 13 in the radial direction of the target and the effective extension length of the non-closed plasma path 23 in the radial direction of the target Equal to the radius of the target.

The outer magnetic pole 12 of the closed magnetron 1 has a closed annular shape, the inner magnetic pole 11 is nested inside the outer magnetic pole 12, and a space is formed between the inner magnetic pole 11 and the outer magnetic pole 12, and the inner magnetic pole 11 and the outer magnetic pole 12 are formed. The space between the gaps is in a closed loop, which is the effective magnetic field region of the closed magnetron 1, which is the closed plasma path 13 of the closed magnetron 1. The non-closed magnetron 2 means that the first magnetic pole 21 and the second magnetic pole 22 included therein are not closed, and are spaced apart from each other to form a spacing region, and the spacing region is in a non-closed pattern, and the non-closed spacing region is The effective magnetic field region of the non-closed magnetron 2 formed by the first magnetic pole 21 and the second magnetic pole 22 is the non-closed plasma path 23 of the non-closed magnetron 2. It should be noted that the effective magnetic field region referred to in the present application means that the magnetic field strength of the magnetic field region is relatively strong, and the magnetic control component mainly exerts a magnetic field through the effective magnetic field region, but the magnetic control component does not only have its effective magnetic field. The area has a magnetic field.

It should be noted that the magnetron element rotates around its center of rotation during the magnetron sputtering process to sweep its plasma path across the process surface of the target, thereby causing the target to corrode under the magnetic field of the plasma path. Regardless of the shape of the plasma path, what actually acts in the radial direction of the target is the portion of the equivalent straight line segment of the plasma path in the radial direction of the target. Since each side of the closed plasma path 13 may be linear, it may also be curved, and the closed plasma path 13 of the linear side may be parallel to the radial direction of the target, or may not be radial to the target. Parallel, therefore, the effective extension length of the closed plasma path 13 in the radial direction of the target refers to the length of the equivalent straight line segment of the closed plasma path 13 in the radial direction of the target. Similarly, since the non-closed plasma path 23 can be linear, it can also be curved, and the linear non-closed plasma path 23 can be parallel to the radial direction of the target, and can also be the diameter of the target. Non-parallel, so, non-closed, etc. The effective extension length of the ion path 23 in the radial direction of the target refers to the length of the equivalent straight line segment of the non-closed plasma path 23 in the radial direction of the target.

In this embodiment, the target is circular, and the closed plasma path 13 and the non-closed plasma path 23 of the magnetron correspond to a radius region located at the center of the target to the edge of the target, and the closed plasma path 13 The effective extension length in the radial direction of the target and the effective extension length of the non-closed plasma path 23 in the radial direction of the target are equal to the radius of the target, such that the magnetron is rotated during the process of the plasma The path as a whole can correspond to sweeping the entire target, thereby achieving full target corrosion of the target and improving the utilization of the target; meanwhile, when the magnetron rotates during the process, due to the closed plasma path 13 and non-closed The plasma path 23 can exactly sweep across the entire target, so that the entire target can be corroded, thereby avoiding the target central region caused by etching the edge region of the target first and then corroding the central region. The corresponding wafer area has a problem of particles, which in turn improves the quality of the sputtering process and product yield.

In this embodiment, during the rotation of the magnetron element, the areas through which the closed plasma path 13 and the non-closed plasma path 23 pass do not coincide with each other, and the center of rotation P of the magnetron element corresponds to the non-closed plasma. In the path 23, by rotating the magnetron element, the entire plasma path can be swept across the entire target, thereby achieving full target corrosion. Preferably, the center of rotation P of the magnetron element coincides with the center of the target, so that the entire target corrosion can be achieved without setting a plasma path with a large area, thereby saving the amount of the magnet under the premise of ensuring corrosion of the entire target. Moreover, in this embodiment, as long as the magnetron element rotates around its rotation center P, full target corrosion can be achieved, and it is not necessary to change the position of the magnetron during the rotation of the magnetron by means of a spring or the like as in the prior art. In order to cover more of the target area; therefore, the magnetron element provided in this embodiment does not need to be provided with an aging component such as a spring, so that the structure is not only simple, but also does not affect the sputtering due to the change of the working state of the aging component such as a spring. Stability. At the same time, compared with the prior art, the magnetron element is only provided with a closed plasma path in the radius region of the target. In this embodiment, the corresponding radius region of the target is provided. The closed plasma path 13 is disposed, and the non-closed plasma path 23 is disposed, and the regions swept by the two during the rotation of the magnetron are not coincident with each other, so that the area of the closed plasma path 13 is relatively reduced. Small, in the case of applying a DC power source to the target, the reduction in area can increase the power density of the closed plasma path 13 acting on the target, thereby increasing the ionization rate of the target and improving the on-wafer pass. The filling effect of the hole.

In this embodiment, the orthographic projection of the closed magnetron 1 in the plane of the target corresponds to the edge region of the target, and the orthographic projection of the non-closed magnetron 2 in the plane of the target corresponds to the central region of the target. Thus, when the magnetron element rotates during the process, the closed plasma path 13 corresponds to sweeping the edge region of the target, and the non-closed plasma path 23 corresponds to sweeping the central region of the target, and the closed plasma The sum of the effective extension length of the body path 13 in the radial direction of the target and the effective extension length of the non-closed plasma path 23 in the radial direction of the target is greater than or equal to the radius of the target, such that when the magnetron 1 and the non-closed magnetic are closed After the control tube 2 rotates around the rotation center P, the area swept by the orthographic projection of the closed plasma path 13 on the target is a circle centered on P, and the non-closed plasma path 23 is on the target. The area swept by the orthographic projection is a circle centered on P (i.e., a circle formed by the non-closed plasma path 23), and the inner diameter of the ring is smaller than or equal to the diameter of the circle (the circle formed by the path 23). In this way, by rotating the magnetron element, the plasma path of the magnetron element can be swept across the entire target to achieve full target corrosion, thereby improving the utilization of the target. During the rotation of the magnetron element around the center of rotation P, since the closed plasma path 13 corresponds to sweeping the edge region of the target, while the non-closed plasma path 23 corresponds to sweeping the central region of the target, during the process, the target The central region of the material and the edge region of the target are simultaneously corroded, thereby avoiding the problem of particles appearing in the wafer region corresponding to the central region of the target caused by etching the edge region of the target first and then corroding the central region. The quality of the sputtering process and product yield.

In the present embodiment, the outer magnetic pole 12 of the closed magnetron 1 and the first magnetic pole 21 of the non-closed magnetron 2 are connected. So set up, during the rotation of the magnetron element about its center of rotation P, It is better enough to make the closed plasma path 13 and the non-closed plasma path 23 sweep across the radius region of the target, thereby avoiding partial leakage of the radius region of the target, thereby better achieving full target corrosion.

It should be noted that, as shown in FIG. 3, the closed magnetron 1 and the non-closed magnetron 2 may also be disconnected, that is, the two are disposed independently of each other, and during the rotation of the magnetron, the closed plasma path 13 The portion of the area through which the non-closed plasma path 23 passes coincides, and the closed plasma path 13 formed by the closed magnetron 1 and the non-closed plasma path 23 formed by the non-closed magnetron 2 sweep across the target. Radius area. With this arrangement, full target corrosion can also be achieved; at the same time, compared with the prior art, the magnetron element is only provided with a closed plasma path in the radius region of the target, and the magnetron element in FIG. 3 corresponds to the target. The radius region is provided with both a closed plasma path 13 and a non-closed plasma path 23, and the regions swept by the two during the rotation of the magnetron element only partially overlap, so that the closed plasma path 13 The area is relatively reduced, and in the case where a direct current power source is applied to the target, the reduction in area can increase the power density of the closed plasma path 13 acting on the target, thereby increasing the ionization rate of the target and improving the target. The filling effect of the through holes on the wafer.

In this embodiment, the magnetron element further includes a backing plate 3, and the closed magnetron 1 and the non-closed magnetron 2 are disposed on the same side of the backing plate 3. The shape of the back plate 3 is circular, and the back plate 3 is the same size as the target, the back plate 3 completely coincides with the target, and the back plate 3 can be rotated by the motor, thereby driving the closed magnetron 1 and the non-closed magnetic field. Control tube 2 rotates. The arrangement of the backing plate 3 enables a set distance between the closed magnetron 1 and the non-closed magnetron 2 and the target to ensure the stability of the magnetron sputtering.

In the present embodiment, as shown in FIG. 2, the closed shapes of the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 are both kidney-shaped. Of course, the closed shapes of the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 may also be circular (as shown in FIG. 4), or the closed shape of the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 may be closed. It can also be other closed shapes.

In addition, in the present embodiment, the spacing between the inner magnetic pole 11 and the outer magnetic pole 12 of the magnetron 1 (i.e., the width of the closed plasma path 13) and the first magnetic pole 21 and the second of the non-closed magnetron 2 are closed. The spacing between the poles 22 (i.e., the width of the non-closed plasma path 23) is equal. The arrangement is such that the magnetic field strength within the closed plasma path 13 and the non-closed plasma path 23 is the same, thereby facilitating uniform sputtering of the target. Of course, the width of the closed plasma path 13 and the width of the non-closed plasma path 23 may also be unequal.

Example 2:

The present embodiment provides a magnetic control element. Unlike the first embodiment, as shown in FIG. 5, the outer magnetic pole 12 of the closed magnetron 1 serves as the first magnetic pole of the non-closed magnetron 2, and the outer magnetic pole 12 A non-closed plasma path is formed between the second pole 22 and the second pole. That is, the second magnetic pole 22 of the non-closed magnetron 2 and the outer magnetic pole 12 of the closed magnetron 1 are spaced apart from each other and form a spacing region in which an effective magnetic field is formed, which is a non-closed plasma. Path 23.

In this embodiment, during the rotation of the magnetron about its center of rotation P, the closed plasma path 13 corresponds to sweeping a portion of the region within the radius of the target, and the non-closed plasma path 23 corresponds to sweeping the entire target. In the radius region, during the target sputtering process, the closed plasma path 13 and the non-closed plasma path 23 jointly correspond to the radius region of the target, thereby achieving full target corrosion and improving target utilization. At the same time, the problem of particles appearing in the wafer region corresponding to the central region of the target caused by etching the edge region of the target and then corroding the central region of the target is avoided, thereby improving the quality and product of the sputtering process. In addition, compared with the prior art, the magnetron element is only provided with a closed plasma path in the radius region of the target, and the magnetron element in FIG. 5 is provided with a closed state corresponding to the radius region of the target. The plasma path 13 is again provided with a non-closed plasma path 23, and the regions swept by the two during the rotation of the magnetron element only partially overlap. Therefore, the area of the closed plasma path 13 is relatively reduced, and in the case where a direct current power source is applied to the target, the reduction in area can increase the power density of the closed plasma path 13 acting on the target, thereby increasing the target. The ionization rate of the material and the filling effect of the through holes on the wafer.

Other structures of the magnetron component in this embodiment are the same as those in Embodiment 1, and are not described herein again.

Example 3:

This embodiment provides a magnetic control element. Different from Embodiment 1-2, as shown in FIG. 6, the orthographic projection of the closed magnetron 1 in the plane of the target corresponds to the central region of the target, and the non-closed magnetic The orthographic projection of the control tube 2 in the plane of the target corresponds to the edge region of the target.

During rotation of the magnetron about its center of rotation P, the closed plasma path 13 corresponds to sweeping the central region of the target, and the non-closed plasma path 23 corresponds to the edge region of the target, closed plasma path 13 The non-closed plasma path 23 corresponds to the radius region of the target, thereby achieving full target corrosion and improving the utilization of the target; and avoiding the prior art by etching the edge region of the target. Corrosion of the central region causes a problem of particles in the wafer region corresponding to the central region of the target, thereby improving the quality of the sputtering process and the yield of the product; meanwhile, the magnetic control component corresponding to the target in the prior art The radius region is only provided with a closed plasma path. In this embodiment, since a closed plasma path 13 is provided corresponding to the radius region of the target, a non-closed plasma path 23 is provided, and both are magnetic. The areas swept during the rotation of the control element do not coincide with each other, so the area of the closed plasma path 13 is relatively reduced, and a DC power source is applied to the target. Case, reducing the area of the plasma can be improved closed path 13 is applied to the power density on the target, thereby increasing the ionization rate of the target, and to improve the through-holes on the wafer filling effect.

Correspondingly, the center of rotation P of the magnetron element in this embodiment corresponds to the plasma located in the closed state. In the body path 13. In this way, by rotating the magnetron element, the plasma path can be swept across the entire target, so that full target corrosion can be achieved.

Other structures of the magnetron element in this embodiment are the same as those in Embodiment 1 or 2, and are not described herein again.

Example 4:

The present embodiment provides a magnetron element. Unlike Embodiment 1-3, as shown in FIG. 7, the effective extension length of the closed plasma path 13 in the radial direction of the target and the non-closed plasma path 23 are The sum of the effective extension lengths in the radial direction of the target is greater than the radius of the target. Preferably, the effective extension length of the non-closed plasma path 23 in the radial direction of the target is equal to the diameter length of the target. That is, the length of the equivalent straight line segment of the non-closed plasma path 23 in the radial direction of the target is equal to the diameter length of the target. The arrangement of the closed magnetron 1 in this embodiment is the same as that of any of Embodiments 1-3.

So, during the rotation of the magnetron about its center of rotation P, the closed plasma path 13 corresponds to a portion of the radius of the target, and the non-closed plasma path 23 corresponds to sweeping the entire diameter of the target, closing The plasma path 13 and the non-closed plasma path 23 jointly correspond to sweeping the entire diameter region of the target, thereby achieving full target corrosion and improving the utilization of the target; and avoiding prior corrosion in the prior art. The edge region of the target re-corrodes the central region to cause the problem of particles in the wafer region corresponding to the central region of the target, thereby improving the quality of the sputtering process and the yield of the product; meanwhile, compared with the prior art, the magnetic control The component corresponds to the case where only the closed plasma path is provided in the radius region of the target, and the magnetron element in FIG. 3 is provided with a closed plasma path 13 and a non-closed plasma due to the corresponding radius region of the target. The body path 23, and the areas swept by the two during the rotation of the magnetron element only partially overlap, so the area of the closed plasma path 13 is made Relatively reduced, in the case where a DC power source is applied to the target, the reduction in area can increase the power density of the closed plasma path 13 acting on the target, thereby increasing The ionization rate of the target and the filling effect of the through holes on the wafer.

Other structures of the magnetron component in this embodiment are the same as those in any of Embodiments 1-3, and are not described herein again.

Advantages of Embodiments 1-4: The magnetron elements provided in Embodiments 1-4 are configured such that the closed plasma path and the non-closed plasma path correspond at least to a radius from the center of the target to the edge of the target The region, and the effective extension length of the closed plasma path in the radial direction of the target and the effective extension length of the non-closed plasma path in the radial direction of the target are greater than or equal to the radius of the target, and not only the full target of the target can be achieved Corrosion, improve the utilization of the target; and avoid particles in the wafer area corresponding to the central area of the target, improve the quality of the magnetron sputtering process and product yield; and, at the same time, apply DC power to the target Due to the reduced area of the closed plasma path, the power density of the closed plasma path acting on the target can be increased, thereby increasing the ionization rate of the target and improving the filling effect of the via holes on the wafer.

Example 5:

The present embodiment provides a magnetron sputtering apparatus, as shown in FIG. 8, comprising a target 7, and further comprising a magnetron element 15 in any of Embodiments 1-4, the magnetron element 15 being disposed on the target 7 Above; the magnetron sputtering device further comprises a radio frequency power source 16 and/or a DC power source 17, and its control element 18, the RF power source 16 and/or the DC power source 17 is connected to the target 7, and the control element 18 is connected to the RF power source 16 and/or The DC power source 17, control element 18 is used to control the RF power source 16 and/or the DC power source 17 to provide sputtering power to the target 7.

Therein, the control element 18 controls the RF power source 16 and the DC power source 17 to be alternately applied to the target 7 to provide sputtering power to the target 7. Under the action of the RF power source 16, because the closed plasma path and the non-closed plasma path correspond at least to a radius region located at the center of the target 7 to the edge of the target 7, and the closed plasma path is at the target 7 diameter Effective extension of the upward effective length and non-closed plasma path in the radial direction of the target 7 The sum of the elongations is greater than or equal to the radius of the target 7, which can make the surface corrosion of the target 7 more uniform, achieve full target corrosion, and the target utilization rate is high, and at the same time, can improve the ionization rate of the target 7; Under the action of the power source 17, since the closed plasma path area of the closed magnetron is relatively reduced, the power density of the closed plasma path acting on the target 7 is increased, thereby increasing the ionization rate of the target 7, and The through hole filling effect on the surface of the wafer 19 is also improved. The RF power source 16 and the DC power source 17 alternately act on the target 7, which can achieve full target corrosion and improve target utilization; at the same time, the ionization rate of the target 7 can be improved, and a better through hole filling effect can be obtained.

In this embodiment, the frequency range of the radio frequency power source is 400k-60MHz. Preferably, the frequency of the radio frequency power source is 400 kHz, 2 MHz, 13.56 MHz, 40 MHz or 60 MHz.

Advantageous Effects of Embodiment 5, the magnetron sputtering apparatus provided in Embodiment 5, by using the magnetron element of any of Embodiments 1-4, not only improves the ionization rate of the metal target but also realizes the total target corrosion.

It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

A magnetron element for a sputtering target, comprising: a closed magnetron and a non-closed magnetron, wherein a closed plasma path is formed between an inner magnetic pole and an outer magnetic pole of the closed magnetron, A non-closed plasma path is formed between the first magnetic pole and the second magnetic pole of the non-closed magnetron, the closed plasma path and the non-closed plasma path at least corresponding to a center of the target a radius region to the edge of the target, and an effective extension length of the closed plasma path in the radial direction of the target and an effective extension length of the non-closed plasma path in the radial direction of the target The sum is greater than or equal to the radius of the target. The magnetron of claim 1 wherein said closed plasma path and said non-closed plasma path do not coincide with each other during rotation of said magnetron element, The center of rotation of the magnetron element corresponds to being located in the closed plasma path or the non-closed plasma path, the center of rotation of the magnetron element coinciding with the center of the target. The magnetron of claim 1 wherein an orthographic projection of said closed magnetron at a plane of said target corresponds to an edge region of said target, said non-closed magnetron being located The orthographic projection of the plane in which the target is located corresponds to a central region of the target. The magnetron component according to claim 1, wherein an orthographic projection of said closed magnetron in a plane of said target corresponds to a central region of said target, said non-closed magnetron being located The orthographic projection of the plane in which the target is located corresponds to the edge region of the target. The magnetron component of claim 1 wherein the effective extent of the non-closed plasma path in the radial direction of the target is equal to the diameter length of the target. The magnetron component of claim 1 wherein the outer magnetic pole of the closed magnetron is coupled to the first magnetic pole of the non-closed magnetron. The magnetron element according to claim 1, wherein said outer magnetic pole of said closed magnetron is used as said first magnetic pole of said non-closed magnetron, said outer magnetic pole and said The non-closed plasma path is formed between the two magnetic poles. A magnetron sputtering apparatus comprising a target, characterized by further comprising the magnetron element according to any one of claims 1 to 7, the magnetron element being disposed directly above the target; A DC power source and/or a RF power source, the DC power source and/or the RF power source being coupled to the target for providing sputtering power to the target. The magnetron sputtering apparatus according to claim 8, wherein said RF power source has a frequency in the range of 400 k to 60 MHz. The magnetron sputtering apparatus according to claim 9, wherein the frequency of the radio frequency power source is 400 kHz, 2 MHz, 13.56 MHz, 40 MHz or 60 MHz.

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